JP2008270679A - Solid-state imaging device, manufacturing method thereof, and imaging device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an imaging device capable of reducing the region between lenses, preventing incident light from entering to neighboring pixels, and preventing the mixture of color. <P>SOLUTION: The solid-state imaging device 1 is provided with a condensing lens 51 condensing incident light to each of a plurality of sensor portions 12 which photoelectrically convert the incident light to output electrical signals. The condensing lens 51 is formed like an almost rectangular column in light path direction, and a convex shape in the light incident side. A groove 53 is formed between the condensing lens 51 and the condensing lens 51 adjacent in the condensing lens 51. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device, a manufacturing method thereof, and an imaging device.

  In a solid-state imaging device such as a CCD type image sensor or a CMOS type image sensor, as a countermeasure against a decrease in sensitivity due to the miniaturization of a pixel area, a condensing lens is provided on the light incident side of each pixel, and incident light enters a photoelectric conversion unit (sensor). The thing with the structure which concentrates is becoming mainstream. In this condensing lens, a resist pattern is formed on each pixel by a lithography method, and then a heat treatment (for example, a reflow process) is performed to bring the resist pattern into a molten state, and a lens shape is obtained using the surface tension. It is common.

  For example, in a method of forming a condensing lens by reflow processing, as shown in FIG. 10A, a resist film serving as a lens material is applied on the base layer 311 to a thickness of, for example, 300 nm to 700 nm, and lithography is performed. A lens forming pattern 313 is processed by a technique (exposure, development, baking, etc.). Next, as shown in FIG. 10B, heat treatment (reflow treatment) is performed to melt the lens formation pattern 313, and a hemispherical condenser lens 315 is formed using the surface tension. In addition, in FIG. 10, sectional drawing was shown in the upper figure, and the top view was shown in the lower figure.

  In the above-described conventional method, the lens forming pattern 313 made of resist is thermally reflowed, and thus the obtained condensing lens 315 uses the surface tension of the resist film itself, and thus has a shape in plan view (FIG. 10 (2 ) Becomes a circle. Therefore, the region between the condensing lens and the adjacent condensing lens (inter-lens region), particularly the inter-lens region where the four pixels are adjacent, is connected to the sensor unit that photoelectrically converts incident light to obtain an electrical signal. It becomes an invalid region that does not contribute to light collection, and becomes so large that it cannot be ignored with respect to the lens area. For this reason, the improvement of the condensing rate commensurate with miniaturization cannot be achieved. If the mask size is narrowed or the conversion difference is increased by increasing the thermal reflow temperature in an attempt to narrow the inter-lens area, the process margin decreases and the condensing lenses come into contact with each other. The problem of deformation occurs.

  Since the light incident on the inter-lens region is not condensed on the sensor part and does not contribute to the sensitivity, the inter-lens region cannot be ignored in order to improve the sensitivity along with further miniaturization in recent years. As a solution to this, a method of separately forming lenses of adjacent pixels (for example, refer to Patent Document 1), a method of forming a lens using a special pattern (for example, refer to Patent Document 2), and over a lens. A method of providing a coat layer is disclosed.

  The condensing rate of the condensing lens varies depending on the lens shape (pattern size, curvature, etc.) and the distance between the sensor unit and the condensing lens, but between the condensing lens formed on the outermost surface and the sensor unit. A method of further improving the light collection rate by providing an in-layer lens and having a plurality of lenses on the optical path of incident light (for example, see Patent Document 3) has been put into practical use.

  However, since the formation of the lens shape in the above method is basically a thermal reflow method, the reduction of the inter-lens area is insufficient, which causes a sensitivity variation of each pixel. Also, from the viewpoint of optimizing the light collection rate, the thickness of the condenser lens and the distance between the condenser lens and the sensor unit are important, but it is difficult to control them separately by simple thermal reflow, It is difficult to achieve a desired light collection rate. Furthermore, the double lens structure consisting of the condensing lens and the in-layer lens formed on the surface improves the degree of freedom in optimizing the condensing rate, but each lens is formed by thermal reflow. The above-described problems occur in the optimization of individual lenses. Furthermore, in the lens, incident light at an angle where light cannot be collected may enter adjacent pixels, resulting in color mixture and deterioration in resolution, color reproducibility, and the like.

JP 2000-22117 A Japanese Patent No. 2988556 JP 2002-76316 A

  The problem to be solved is that the area between the lenses is insufficiently reduced, making it difficult to achieve the desired light collection rate. By entering the pixel, color mixing occurs in adjacent pixels, leading to deterioration in resolution, color reproducibility, and the like.

  The present invention makes it possible to prevent color mixing by reducing the area between lenses and preventing incident light from entering adjacent pixels.

  The present invention according to claim 1 is a solid-state imaging device including a condensing lens that condenses the incident light on each of a plurality of sensor units that photoelectrically convert the incident light and output an electrical signal. The optical lens has a substantially prismatic shape in the optical path direction, a light incident side has a convex lens shape, and a groove is formed between the condenser lens and the condenser lens adjacent to the condenser lens. .

  In the present invention according to claim 1, since the condensing lens is substantially prismatic in the optical path direction and the light incident side has a convex lens shape, the condensing lens is formed more than the conventional condensing lens having a round shape in plan view. The area between the lenses, which is not the area, is reduced, and the light that has entered the condenser lens is transmitted through the substantially prismatic condenser lens by the grooves formed between the condenser lenses. The light hitting the side wall portion of the lens is reflected by the difference in refractive index at the interface between the condenser lens and the groove and returned to the condenser lens. Therefore, the incident light is efficiently incident on the sensor unit.

  According to a fourth aspect of the present invention, there is provided a method of manufacturing a solid-state imaging device including a step of forming a condensing lens that condenses incident light on a plurality of sensor units that photoelectrically convert incident light and output an electrical signal. A step of forming a lens material layer on the base layer formed on the sensor unit, a step of forming a resist layer on the lens material layer, and processing the resist layer to form a substantially prismatic shape in the optical path direction. A groove is formed between the step of forming the lens forming pattern and a condensing lens forming pattern formed by deforming the upper part of the lens forming pattern into a convex lens shape by using a chemical shrink method. Forming the condensing lens forming pattern covered with the shrink layer and transferring the shape of the condensing lens forming pattern to the lens material layer to produce light. And performing the step of the light incident side in a substantially prismatic in a direction to form a condenser lens having a convex lens shape in order.

  In the present invention according to claim 4, since the condensing lens is formed in a substantially prismatic shape in the optical path direction and the light incident side is formed in a convex lens shape, the condensing lens is formed rather than the conventional condensing lens having a round shape in plan view. The inter-lens area, which is not an area, is reduced, and the light that has entered the condenser lens is transmitted through the substantially prismatic condenser lens by the grooves formed between the condenser lenses. The light hitting the side wall portion of the light is reflected by the difference in refractive index at the interface between the condenser lens and the groove and returned into the condenser lens. Therefore, it is possible to form a condensing lens that allows incident light to efficiently enter the sensor unit.

  The present invention according to claim 5 is a condensing lens that condenses the incident light on each of a condensing optical unit that condenses incident light and a plurality of sensor units that photoelectrically convert the incident light and output an electrical signal. And a signal processing unit that processes a signal photoelectrically converted by the solid-state imaging device, the condenser lens is columnar in the optical path direction, and the light incident side has a convex lens shape, and the condenser A groove is formed between the lens and the condenser lens adjacent to the condenser lens.

  In the present invention according to claim 5, since the solid-state imaging device of the present invention is used, a solid-state imaging device having excellent light collecting characteristics is used.

  According to the first aspect of the present invention, since the inter-lens region can be reduced, there is an advantage that the sensitivity can be improved. In addition, since the light that has been a color mixture component can be blocked by forming the groove, there is an advantage that color reproducibility and resolution can be improved.

  According to the fourth aspect of the present invention, since the inter-lens region can be reduced, there is an advantage that a solid-state imaging device with improved sensitivity can be provided. In addition, since the light that has been a color mixture component can be blocked by forming the groove, there is an advantage that color reproducibility and resolution can be improved.

  According to the fifth aspect of the present invention, since the solid-state imaging device capable of enhancing color reproducibility and resolution is used for the imaging element, there is an advantage that high-quality video can be recorded.

  An embodiment (first example) of the solid-state imaging device of the present invention will be described with reference to the schematic sectional view of FIG.

  As shown in FIG. 1, a P-type well region 11 is formed in a semiconductor substrate 10 (for example, an N-type silicon substrate), and a sensor unit 12 that photoelectrically converts incident light is formed in the P-type well region 11. On one side of the sensor unit 12, a read gate unit 13, a vertical charge transfer unit 14, and a channel stop region 15 are formed, and further adjacent sensor units 12 are formed. A channel stop region 15 is also formed on the other side.

  The sensor unit 12 has an N-type impurity region 21 formed in the first P-type well region 11 and a P-type hole accumulation region 22 formed thereon.

  The vertical charge transfer unit 14 includes, for example, a second P-type well region 23 having a higher concentration than the P-type well region 11 and an N-type transfer channel 24 formed above the second P-type well region 23. It is configured. An electrode 32 is formed on the N-type transfer channel 24 via a gate insulating film 31. The electrode 32 also serves as a read gate electrode together with the vertical transfer electrode.

  An insulating film 33 is formed so as to cover the electrode 32, and a light shielding film 34 is further formed. The light shielding film 34 is formed of a metal film such as tungsten or aluminum. An opening 35 is formed in the light shielding film 34 on the sensor unit 12. Further, it is covered with a passivation film 36 and a planarizing film 37, and a color filter layer 41 is formed on the planarizing film 37. A condensing lens 51 is provided on the color filter layer 41 so that incident light is efficiently condensed on the sensor unit 12. Although not shown between the color filter layer 41 and the condensing lens 51, in order to prevent the influence of the etch back processing of the condensing lens 51 from affecting the underlying color filter layer 41, the incident light is not affected. On the other hand, a transparent insulating film can be formed. As this insulating film, for example, a silicon oxide film may be formed.

  The condensing lens 51 has a substantially prismatic shape in the optical path direction and a light incident side formed in a convex lens shape. A groove 53 is formed between the condenser lens 51 and the condenser lens 51 adjacent to the condenser lens 51.

  In the solid-state imaging device 1, the condensing lens 51 is formed in a substantially prismatic shape in the optical path direction and the light incident side is formed in a convex lens shape. Therefore, as shown in FIG. The inter-lens region 55, which is a region where the condensing lens 51 is not formed, is reduced more than that indicated by the dotted line), and the light that has entered the condensing lens 51 by the groove 53 formed between the condensing lenses 51. The light transmitted through the substantially prismatic condenser lens 51 and hits the side wall of the condenser lens 51 is reflected by the difference in refractive index at the interface between the condenser lens 51 and the groove 53 to be collected by the condenser lens 51. Returned in. Therefore, the incident light is efficiently incident on the sensor unit 12. Therefore, since the area between lenses can be reduced, there is an advantage that sensitivity can be improved. In addition, the formation of the grooves 53 can block the light that has been a color mixture component, so that there is an advantage that color reproducibility and resolution can be improved. In particular, it is effective for a solid-state imaging device in which the cell size is smaller than 2 μm so that the lens size ≦ the cell size.

  The solid-state imaging device 1 of the first embodiment is not limited to the configuration described above, and the configuration of the condenser lens of the solid-state imaging device 1 is applied to all so-called surface irradiation type solid-state imaging devices. be able to.

  Next, an embodiment (second example) of the solid-state imaging device of the present invention will be described with reference to the schematic sectional view of FIG. FIG. 3 shows an example in which the present invention is applied to a so-called back-illuminated solid-state imaging device 2. In FIG. 3, the same components as those described in FIG. 1 are given the same reference numerals.

  As shown in FIG. 3, the active layer 111 formed of the semiconductor substrate 110 includes a sensor unit (for example, a photodiode) 112 that photoelectrically converts incident light to extract an electric signal, a transfer transistor, an amplification transistor, a reset transistor, and the like. A plurality of pixel portions 121 including the transistor group 113 and the like are formed. For example, a silicon substrate is used as the semiconductor substrate 110. Further, a signal processing unit (not shown) for processing signal charges read from each sensor unit 112 is formed.

  An element isolation region 122 is formed in a part of the periphery of the pixel portion 121, for example, between the pixel portions 121 in the row direction or the column direction.

  A wiring layer 131 is formed on the surface side of the semiconductor substrate 110 on which the sensor unit 112 is formed (the lower side of the semiconductor substrate 110 in the drawing). The wiring layer 131 includes a wiring 132 and an insulating film 133 that covers the wiring 132. A support substrate 135 is formed on the wiring layer 131. The support substrate 135 is made of, for example, a silicon substrate.

  Further, in the solid-state imaging device 2, a planarizing film 141 having optical transparency is formed on the back side of the semiconductor substrate 110. Further, a color filter layer 41 is formed on the planarizing film 141 (on the upper surface side in the drawing). The color filter layer 41 is formed so as to correspond to the sensor unit 112, and is formed, for example, by arranging each color of red (Red), green (Green), and blue (Blue) in a checkered pattern. On the color filter layer 41, a condensing lens 51 that condenses incident light on each sensor unit 112 is formed. Although not shown between the color filter layer 41 and the condensing lens 51, in order to prevent the influence of the etch back processing of the condensing lens 51 from affecting the underlying color filter layer 41, the incident light is not affected. On the other hand, a transparent insulating film can be formed. As this insulating film, for example, a silicon oxide film may be formed.

  The condensing lens 51 has a substantially prismatic shape in the optical path direction and a light incident side formed in a convex lens shape. A groove 53 is formed between the condenser lens 51 and the condenser lens 51 adjacent to the condenser lens 51.

  In the solid-state image pickup device 2, similarly to the solid-state image pickup device 1, the condensing lens 51 is formed in a substantially prismatic shape in the optical path direction and the light incident side is formed in a convex lens shape. In addition, the inter-lens region 55, which is a region where the condensing lens 51 is not formed, is reduced and formed between the condensing lenses 51, compared to a conventional condensing lens having a round shape in plan view (shown by a dotted line). The light that has entered the condenser lens 51 through the groove 53 is transmitted through the substantially prismatic condenser lens 51, and the light that strikes the side wall of the condenser lens 51 is between the condenser lens 51 and the groove 53. The light is reflected by the difference in refractive index at the interface and returned to the condenser lens 51. Accordingly, incident light is efficiently incident on the sensor unit 112. Therefore, since the area between lenses can be reduced, there is an advantage that sensitivity can be improved. In addition, the formation of the grooves 53 can block the light that has been a color mixture component, so that there is an advantage that color reproducibility and resolution can be improved. In particular, it is effective for a solid-state imaging device in which the cell size is smaller than 2 μm so that the lens size ≦ the cell size.

  The solid-state imaging device 2 of the second embodiment is not limited to the configuration described above, and the configuration of the condenser lens of the solid-state imaging device 2 is applied to all so-called back-illuminated solid-state imaging devices. be able to.

  Next, an embodiment (third example) of the solid-state imaging device of the present invention will be described with reference to the schematic sectional view of FIG. The third embodiment can be applied to the condenser lens used in the solid-state imaging device 1 of the first embodiment and the solid-state imaging device 2 of the second embodiment. Therefore, in FIG. 4, only the part of the condensing lens is shown.

  As shown in FIG. 4, the third embodiment has a configuration in which a reflective film 55 is embedded in a groove 53 formed on the side periphery of the condenser lens 51. For the reflective film 55, for example, aluminum (Al), tungsten (W), ruthenium (Ru), or iridium (Ir) is used. Thus, the effect of maximizing the resistance to color mixture can be obtained with a metal light-shielding film (non-transmissive film).

  The reflection film 55 may be an inorganic film or an organic film. For example, when the condensing lens 51 is formed of silicon nitride (SiN), the use of an acrylic resin film for the reflecting film 55 increases the refractive index of the condensing lens 51 and the reflecting film 55, thereby condensing the light. Since total reflection occurs at the interface between the lens 51 and the reflection film 55, color mixing can be prevented as in the case of using a metal film. As described above, when the total reflection at the interface between the condenser lens 51 and the reflection film 55 is used, a transmission film for visible light can be used as the reflection film 55.

  Next, an embodiment (first example) according to a method for manufacturing a solid-state imaging device of the present invention will be described with reference to manufacturing process diagrams of FIGS. Here, a main body part of the solid-state imaging device, such as a sensor unit that photoelectrically converts incident light to extract signal charges, a reading unit that reads signal charges from the sensor unit, a charge transfer unit that transfers signal charges read by the reading unit, and the like The color filter layer is formed by a conventional known manufacturing method. Therefore, here, a method of manufacturing a condensing lens formed on the color filter layer will be described. 5 to 7, (1) shows a cross-sectional view, and (2) shows a plan view.

  As shown in FIGS. 5A and 5B, a lens material layer 62 is formed on a base layer 61 formed on a sensor unit (not shown). For example, in the solid-state imaging device 1, the base layer 61 corresponds to the planarization film 31, the color filter layer 41, and the like. In the solid-state imaging device 2, the planarization film 141, the color filter layer 41, and the like. It corresponds to. The lens material layer 62 uses, for example, a resin that is transparent to visible light (for example, visible light transmittance needs to be 95% or more, preferably 98% or more). As an example, an acrylic resin is used.

  A resist layer 63 is formed on the lens material layer 62. For the resist layer 63, for example, a chemically amplified resist using a phenol resin or a styrene resin as a base resin is used. The resist layer 63 is formed to a thickness of, for example, about 700 nm to 6 μm, which is thicker than that formed by thermally reflowing a conventional resist pattern (for example, a thickness of 300 nm to 600 nm). Here, as an example, it was formed to a thickness of 4 μm.

  The film thickness of the resist layer 63 is such that the curvature of the surface of the condensing lens 51 to be formed later and the surface of the sensor unit (see FIG. (Not shown).

  Next, the resist layer 63 is processed by a lithography technique to form a prismatic lens formation pattern 64 in the optical path direction.

  Next, as shown in FIGS. 6A and 6B, the upper part of the lens forming pattern 64 is deformed into a convex lens shape by using a chemical shrink method, and the condensing lens forming pattern 65 is changed to an adjacent condensing lens. It forms so that the groove | channel 66 may be formed between the formation patterns 65. FIG. At this time, the condensing lens forming pattern 65 can reduce the groove 66 with a controllability of about several tens of nanometers to one hundred nanometers while obtaining a lens shape on the upper surface. Therefore, the inter-lens area 68 (shaded area) in the part adjacent to the four pixel portions 71 shown in the drawing, that is, the invalid area that does not contribute to the light collection, is not enlarged from the time when the lens formation pattern 64 is formed. In the drawing, a two-dot chain line indicates a pixel boundary.

  The chemical shrink method is not a simple thermal reflow method, but has a feature of improving the controllability of the resist pattern gap. That is, in the chemical shrink method, when the heat treatment is performed, the surface tension of the resist is not dominant, so that the inter-lens region can be reduced more accurately than the reflow method.

  In the chemical shrink method, although not shown, a shrink layer is formed so as to cover the lens forming pattern. This shrink layer is made of, for example, a polyvinyl alcohol-based water-soluble resin as a main material to which a crosslinking agent is added. For example, there is RELACS AZR500, which is a shrink material made by Clariant. Such a shrink material is applied to a thickness of, for example, 0.6 μm to 0.7 μm to form the shrink layer. Then, the shrink layer and the lens formation pattern are heat-treated to deform the upper portion of the lens formation pattern into a convex lens shape, and form the condenser lens formation pattern 65 so that the groove is maintained between the adjacent lens formation patterns. . At this time, in order for the shrink layer to prevent the lens formation pattern from falling, the condenser lens formation pattern 65 has a substantially prismatic shape in the optical path direction of the incident light and has a convex lens shape on the light incident side. In the heat treatment, for example, after baking at a low temperature of 70 ° C., mixing baking is performed again at 120 ° C. to 130 ° C. Then, after developing, the unreacted shrink layer is removed by washing with pure water.

  Next, as shown in FIGS. 7A and 7B, the condensing lens forming pattern 65 (see FIG. 6) and the lens material layer 62 are etched back to form the condensing lens forming pattern 65. The shape is transferred to the lens material layer 62 to form a condensing lens 51 having a substantially prismatic shape in the optical path direction and a convex lens shape on the light incident side. At this time, the etch back of the lens material layer 62 may be performed up to the surface of the base layer 61, or may be performed in the middle of the lens material layer 62, that is, the base layer 61 is not exposed. For example, when the underlayer 61 is a color filter layer, it is preferable that the underlayer 61 is not exposed.

In the etch back, for example, oxygen (O ₂ ) or a fluorine-based gas is used. For example, carbon tetrafluoride (CF ₄ ), octafluorocyclobutane (C ₄ F ₈ ), or trifluoride methane (CHF ₃ ) is used as the fluorine-based gas. In the etch back, the lens material layer 61 can be etched back so that the surface of the condensing lens 51 has a height at which an optimum condensing rate can be obtained.

  In the above manufacturing method, the condensing lens 51 is formed in a substantially prismatic shape in the optical path direction and the light incident side is formed in a convex lens shape. The light-incident light entering the condenser lens 51 is transmitted through the substantially prismatic condenser lens 51 through the grooves 53 formed between the condenser lenses 51 and condensed. The light hitting the side wall of the lens 51 is reflected by the difference in refractive index at the interface between the condenser lens 51 and the groove 53 and returned to the condenser lens 51. Therefore, it is possible to form the condensing lens 51 that allows the incident light to efficiently enter the sensor unit. Therefore, since the area between the lenses can be reduced, there is an advantage that a solid-state imaging device with improved sensitivity can be provided. In addition, the formation of the grooves 53 can block the light that has been a color mixture component, so that there is an advantage that color reproducibility and resolution can be improved.

  Next, an embodiment (second example) according to the method for manufacturing a solid-state imaging device of the present invention will be described with reference to the manufacturing process diagram of FIG. Here, a method of manufacturing the structure of the condensing lens described with reference to FIG. 4 will be described.

  As shown in FIG. 8A, a reflective film 55 is formed so as to fill the groove 53 of the condenser lens 51. For the reflective film 55, for example, aluminum (Al), tungsten (W), ruthenium (Ru), or iridium (Ir) is used. Thus, the effect of maximizing the resistance to color mixture can be obtained with a metal light-shielding film (non-transmissive film).

  Next, as shown in FIG. 8B, the reflective film 55 is etched back to leave the reflective film 55 only in the groove 53. In this way, the structure of the condenser lens 51 described with reference to FIG. 4 is obtained.

  Since the reflective film 55 is formed in the groove 53 as in the manufacturing method of the second embodiment, light incident on each pixel is prevented from being incident on an adjacent pixel by the reflective film 55. Color mixing between pixels is prevented. In addition, since light entering the adjacent pixel direction can be returned to the pixel, sensitivity can be improved.

  In each of the above-described embodiments, the condenser lens (top lens) formed on the uppermost layer has been described. However, the condenser lens 51 according to the present invention is an in-layer lens formed between the sensor unit and the condenser lens. It can also be applied to. Therefore, it is also possible to provide a plurality of lenses including the condenser lens and the intralayer lens on the optical path of incident light incident on the sensor unit.

  As described above, the solid-state imaging device of the present invention effectively uses the invalid area that does not contribute to the condensing on the sensor unit in the conventional condenser lens, and reduces the distance between the lenses that become the invalid area. The incident light that has been applied to the adjacent pixels is condensed on the pixel area using the invalid area that still occurs. Further, by forming a reflective film, light leakage to adjacent pixels is prevented, and the light collection characteristics can be improved.

  In addition, since the condensing lens 51 can be formed with good controllability of the distance between the condensing lenses 51, variation in sensitivity among pixels can be reduced, thereby improving yield.

  Moreover, since the film thickness of the resist layer 63 can be set freely, the light collection rate can be improved by setting the distance between the light collecting lens and the sensor unit to a desired value. Thereby, the sensitivity of a solid-state imaging device can be improved.

  Furthermore, since the color mixture prevention structure described with reference to FIG. 4 can block incident light that has conventionally been a color mixture component to adjacent pixels, it is possible to prevent a decrease in color reproducibility and resolution. As a result, the yield can be improved. If the reflected light enters the sensor, an improvement in sensitivity can be expected.

  Next, an embodiment (example) according to the imaging apparatus of the present invention will be described with reference to the block diagram of FIG. Examples of the imaging apparatus include a video camera, a digital still camera, and a mobile phone camera.

  As illustrated in FIG. 7, the imaging device 500 includes a solid-state imaging device (not shown) in the imaging unit 501. An imaging optical system 502 that forms an image is provided on the light condensing side of the imaging unit 501, and the imaging unit 501 has an image of a signal that is photoelectrically converted by a driving circuit that drives the imaging unit 501 and a solid-state imaging device. A signal processing unit 503 having a signal processing circuit or the like for processing is connected. The image signal processed by the signal processing unit can be stored by an image storage unit (not shown). In such an imaging apparatus 500, the solid-state imaging apparatus 1 or the solid-state imaging apparatus 2 described in the above embodiment can be used as the solid-state imaging element.

  Since the imaging apparatus 500 of the present invention uses the solid-state imaging apparatus 1 or the solid-state imaging apparatus 2 of the present invention or a solid-state imaging apparatus having a condensing lens on which a reflective film having the configuration shown in FIG. Similarly to the above, since the solid-state imaging device capable of improving color reproducibility and resolution is used, there is an advantage that there is an advantage that a high-quality video can be recorded.

  Note that the imaging device 500 of the present invention is not limited to the above configuration, and can be applied to any configuration as long as the imaging device uses a solid-state imaging device.

  The solid-state imaging devices 1, 2 and the like may be formed as a single chip, or in a modular form having an imaging function in which an imaging unit and a signal processing unit or an optical system are packaged together. There may be. Further, the present invention can be applied not only to a solid-state imaging device but also to an imaging device. In this case, an effect of improving the image quality can be obtained as the imaging device. Here, the imaging device indicates, for example, a camera or a portable device having an imaging function. “Imaging” includes not only capturing an image during normal camera shooting but also includes fingerprint detection in a broad sense.

1 is a schematic cross-sectional view illustrating an embodiment (first example) of a solid-state imaging device according to the present invention. FIG. It is a schematic structure sectional view showing an embodiment (second example) of a solid-state imaging device of the present invention. It is a schematic structure sectional view showing an embodiment (third example) of the solid-state imaging device of the present invention. It is the manufacturing process figure which showed one Embodiment (1st Example) of the manufacturing method of the solid-state imaging device of this invention. It is the manufacturing process figure which showed one Embodiment (1st Example) of the manufacturing method of the solid-state imaging device of this invention. It is the manufacturing process figure which showed one Embodiment (1st Example) of the manufacturing method of the solid-state imaging device of this invention. FIG. It is the block diagram which showed one Embodiment (Example) which concerns on the imaging device of this invention. It is a manufacturing process figure which showed the manufacturing method of the conventional condensing lens.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Solid-state imaging device, 12 ... Sensor part, 51 ... Condensing lens, 53 ... Groove

Claims (5)

A solid-state imaging device including a condenser lens that condenses the incident light on each of a plurality of sensor units that photoelectrically convert incident light and output an electrical signal,
The condenser lens has a substantially prismatic shape in the optical path direction and a light incident side forms a convex lens shape,
A groove is formed between the condenser lens and the condenser lens adjacent to the condenser lens. The solid-state imaging device according to claim 1, wherein a refractive index difference is present at an interface between the condenser lens and the groove. The solid-state imaging device according to claim 1, wherein a reflective film is embedded in the groove. A method of manufacturing a solid-state imaging device including a step of forming a condensing lens that condenses incident light on a plurality of sensor units that photoelectrically convert incident light and output an electrical signal,
Forming a lens material layer on a base layer formed on the sensor unit;
Forming a resist layer on the lens material layer;
Processing the resist layer to form a columnar lens forming pattern in the optical path direction;
Forming a condensing lens forming pattern so that a groove is formed between adjacent condensing lens forming patterns by deforming the upper part of the lens forming pattern into a convex lens using a chemical shrink method;
The condensing lens forming pattern covered with the shrink layer is etched back to transfer the shape of the condensing lens forming pattern to the lens material layer so as to have a columnar shape in the optical path direction and a convex lens shape on the light incident side. And a step of forming a solid-state imaging device. A condensing optical unit that condenses incident light;
A solid-state imaging device including a condenser lens that condenses the incident light on each of a plurality of sensor units that photoelectrically convert the incident light and output an electrical signal;
A signal processing unit that processes a signal photoelectrically converted by the solid-state imaging device,
The condenser lens has a substantially prismatic shape in the optical path direction and a light incident side forms a convex lens shape,
A groove is formed between the condenser lens and a condenser lens adjacent to the condenser lens.

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