JP2011018811A - Vapor-phase epitaxy device - Google Patents

Abstract

Provided is a vapor phase growth apparatus capable of obtaining a temperature distribution capable of canceling an in-plane distribution of an epitaxial thin film with respect to a substrate having asymmetric crystal characteristics in the substrate plane.
An organometallic vapor phase growth apparatus 110 is (a) a vapor phase growth apparatus for forming an epitaxial thin film on a main surface of a substrate 111 having an asymmetric off-angle distribution, and (b) turning off the substrate 111. Grooving is performed on the surface with an asymmetrical groove pattern according to the angular distribution, and the heat equalizing plate 114 disposed so that the grooved surface faces the back side of the main surface of the substrate 111; (C) a susceptor 112 in which the substrate 111 is arranged in a rotating portion with the main surface of the substrate 111 facing down, and rotates the substrate 111 and the soaking plate 114 together in the circumferential direction; and (d) a soaking plate. And a heater 113 that heats the substrate 111 through 114 and generates an asymmetric temperature distribution in the substrate surface.
[Selection] Figure 1

Description

  The present invention relates to a vapor phase growth apparatus having a soaking plate for improving the in-plane uniformity of the composition of an epitaxial thin film.

  In recent years, in a method for forming a compound semiconductor thin film, a metal organic chemical vapor deposition (MOCVD) method in which an epitaxial thin film is formed on a substrate has attracted attention. In the metal organic chemical vapor deposition method, a source gas is introduced into a reaction furnace together with a carrier gas, heated in the reaction furnace, and thermally decomposed in the vicinity of the substrate. Thereby, a thin film (hereinafter referred to as an epitaxial thin film) obtained by epitaxially growing a semiconductor crystal is formed on the substrate.

  Here, in forming a desired epitaxial thin film uniformly on a substrate, it is important to make the temperature distribution on the substrate uniform. Regarding this, there is known a method (hereinafter referred to as a first example method) in which a soaking plate having a thickness that decreases toward the outer periphery is provided between a heater, which is a heating means, and a substrate (hereinafter referred to as a first example method). For example, see Patent Document 1.)

  Specifically, as shown in FIG. 11, in the metal organic vapor phase growth apparatus 10, the upper wall of the reaction furnace 18 in which the source gas flows from the gas supply port 16 to the gas exhaust port 17 is configured to be rotatable. A plate-shaped susceptor 12 is installed. The susceptor 12 is formed with an opening having substantially the same shape as that of the substrate 11 to be subjected to vapor phase epitaxial growth. The opening accommodates the substrate 11 that is supported with the front side facing down and the back side exposed.

  Further, in the metal organic chemical vapor deposition apparatus 10, a soaking plate 14 is fitted into the opening of the susceptor 12 so as to face the heater 13 that heats the substrate 11. As shown in FIG. 12 (A), the soaking plate 14 is inclined at an inclination angle θ with respect to the horizontal plane, like an inclined surface 14a, and travels from the inner periphery 12a of the susceptor 12 toward the outer periphery 12b. According to the thickness. Thereby, as shown in FIG. 12B, the temperature distribution on the substrate 11 becomes uniform, and the uniformity of the epitaxial thin film is improved.

  However, in the method of the first example, it is realized to make the characteristics of the epitaxial thin film uniform by making the temperature distribution on the substrate having uniform characteristics uniform. For this reason, when epitaxial growth is performed on a substrate having an asymmetric structure or characteristic that is not line symmetric or rotationally symmetric, it is generally difficult to obtain uniform characteristics within the substrate surface.

  On the other hand, as a method of growing an epitaxial thin film having uniform characteristics on a substrate having an asymmetric structure and characteristics, the characteristic distribution of the epitaxial thin film resulting from the gas distribution of a growth furnace having a revolution function is used. There has been proposed a method (hereinafter referred to as a second example method) for canceling the characteristics of the substrate (see, for example, Patent Document 2).

JP 2005-85850 A JP 2008-244319 A

  However, the second method utilizes the gas distribution effect associated with upstream and downstream of the gas flow. For this reason, it is essential to keep the installation state of the substrate constant. In addition, in the metal organic vapor phase epitaxy apparatus that can install a plurality of substrates and has a self-revolving function, the gas distribution effect related to the upstream and downstream of the gas flow cannot be expected unlike the method in the second example. It is difficult to obtain an epitaxial thin film having uniform characteristics in the plane.

  Therefore, in view of the above problems, the present invention provides a gas phase capable of obtaining a temperature distribution capable of canceling the in-plane distribution of the epitaxial thin film with respect to a substrate having asymmetric crystal characteristics in the substrate plane. An object is to provide a growth apparatus.

In order to achieve the above object, a vapor phase growth apparatus according to the present invention has the following features.
(CL1) A vapor phase growth apparatus according to the present invention is (a) a vapor phase growth apparatus for forming an epitaxial thin film on a main surface of a substrate having an asymmetric off angle distribution, and (b) an off angle of the substrate. A soaking plate is provided on the surface with an asymmetric groove pattern according to the distribution, and the soaking plate is disposed so that the grooved surface faces the back side of the main surface of the substrate, (c ) A susceptor in which the substrate is disposed in a rotating portion with the main surface of the substrate facing down, and rotates the substrate and the heat equalizing plate together in the circumferential direction; and (d) through the heat equalizing plate, Heating means for heating the substrate to produce an asymmetric temperature distribution in the substrate plane.

(CL2) In the vapor phase growth apparatus described in (CL1) above, the surface of the soaking plate is divided into a plurality of regions, and irregularities are formed in different forms for each region.
(CL3) In the vapor phase growth apparatus described in (CL2) above, grooves having different depths are formed in each region.

(CL4) In the vapor phase growth apparatus described in (CL2) above, grooves having different pitches are formed in each region.
(CL5) The vapor phase growth apparatus according to (CL1) includes holding means for holding the substrate and the soaking plate and rotating them together.

(CL6) In the vapor phase growth apparatus described in (CL1) above, the soaking plate is in contact with the substrate.
(CL7) In the vapor phase growth apparatus described in (CL1) above, the soaking plate is not in contact with the substrate.

Note that the present invention may be realized not only as a vapor phase growth apparatus but also as a vapor phase growth method described below.
(CL8) A vapor phase growth method according to the present invention is (a) a vapor phase growth method in which an epitaxial thin film is formed on a main surface of a substrate having an asymmetric off-angle distribution, and (b) the main surface of the substrate (C) a soaking plate having a groove processed on the surface with an asymmetrical groove pattern in accordance with the off-angle distribution of the substrate. (D) The substrate and the heat equalizing plate are rotated together in the circumferential direction by the susceptor, and the heating means is used to rotate the substrate so as to face the back side of the main surface of the substrate. The substrate is heated through the soaking plate to create an asymmetric temperature distribution in the substrate plane.

  As described above, in the present invention, the asymmetric groove pattern is formed on the soaking plate in accordance with the off-angle distribution of the substrate. This makes it possible to obtain a temperature distribution on the substrate surface that can cancel the in-plane distribution of the epitaxial thin film with respect to a substrate having asymmetric crystal characteristics in the plane, such as a nitride semiconductor substrate. Along with this, an epitaxial thin film with high uniformity within the substrate surface can be obtained. As a result, the yield in device fabrication can be improved.

1 is a diagram showing a metal organic vapor phase epitaxy apparatus according to Embodiment 1. FIG. FIG. 3 is a diagram showing the shape of a soaking plate in the first embodiment. (A) is a figure which shows the positional relationship of the soaking | uniform-heating board and board | substrate in Embodiment 1, (B) is a figure which shows the temperature distribution of the board | substrate surface. It is a figure which shows in-plane distribution of PL peak wavelength at the time of growing an InGaN quantum well structure epitaxially on a board | substrate using the conventional soaking plate. It is a figure which shows in-plane distribution of PL peak wavelength at the time of making the conventional heat equalizing plate and a board | substrate contact. It is a figure which shows the growth temperature dependence of PL peak wavelength at the time of making an InGaN quantum well structure epitaxially grow on a board | substrate. It is a figure which shows distribution of PL peak wavelength at the time of using the soaking | uniform-heating plate in Embodiment 1, and epitaxially growing an InGaN quantum well structure on a board | substrate. (A) is a figure which shows the positional relationship of the soaking | uniform-heating board and board | substrate in Embodiment 2, (B) is a figure which shows the temperature distribution of a substrate surface. It is a figure which shows distribution of PL peak wavelength at the time of using a soaking plate in Embodiment 2, and making a soaking plate and a board | substrate non-contact. (A) is a figure which shows the positional relationship of the soaking | uniform-heating board and board | substrate in other embodiment, (B) is a figure which shows the temperature distribution of a substrate surface. It is a figure which shows the conventional organometallic vapor phase growth apparatus. (A) is a figure which shows the shape of the conventional heat equalizing plate, (B) is a figure which shows the temperature distribution of a substrate surface.

(Embodiment 1)
Embodiment 1 according to the present invention will be described below.
<Configuration>
Here, as an example, as shown in FIG. 1, the metal organic vapor phase growth apparatus 110 is a face-down type metal organic vapor phase growth apparatus having a self-revolving function.

  Specifically, in the metal organic chemical vapor deposition apparatus 110, a susceptor 112 having a function (hereinafter referred to as a revolution function) capable of rotating about its own central axis as a rotation axis is installed inside the reaction furnace 118. ing. A plurality of substrate holders 115 having a function capable of rotating about the central axis of the susceptor 112 as a rotation axis (hereinafter referred to as a rotation function) are installed along the circumferential direction. Each substrate holding unit 115 is provided with the substrate 111 with the main surface facing down. On the back side of the main surface of the substrate 111, a circular heat equalizing plate 114 is installed so as to be in contact with the substrate 111. Above the susceptor 112, a heater 113 that heats at a constant temperature with no temperature difference between the central part and the end part is installed so as to cover the plurality of substrate holding parts 115 installed in the circumferential part of the susceptor 112. Yes. The substrate 111 and the soaking plate 114 are fixed by the substrate holding unit 115. The substrate holding unit 115 is installed in the surrounding portion of the susceptor 112 in a state where the substrate 111 and the soaking plate 114 are combined. The substrate 111 and the soaking plate 114 are heated by the heater 113 while rotating and revolving. At this time, the substrate 111 and the soaking plate 114 are held together by the substrate holding unit 115 and rotated together, and are rotated together in the circumferential direction by the susceptor 112. The substrate 111 is heated by the heater 113 so that an asymmetric temperature distribution is obtained in the substrate surface through the heat equalizing plate 114.

  Note that the rotation axis (spinning axis) of the substrate holding part 115 is parallel to the rotation axis (revolution axis) of the susceptor 112. The ratio of the rotation speed of the substrate holder 115 and the revolution speed of the susceptor 112 is 2: 1.

  In the metal organic chemical vapor deposition apparatus 110, the source gas is introduced into the reaction furnace 118 from the gas supply port 116 together with the carrier gas. The source gas flows from the center of the susceptor 112 toward the outer periphery. The source gas is heated in the reaction furnace 118 and thermally decomposed in the vicinity of the substrate 111. An epitaxial thin film is formed on the main surface of the substrate 111.

  Here, the substrate 111 is a nitride semiconductor substrate having an asymmetric off-angle distribution with respect to the center and having different crystal characteristics in the substrate plane. In particular, it is known that a nitride semiconductor substrate is strongly influenced by the off-angle distribution in the In composition of the mixed crystal layer. For this reason, even if the temperature distribution in the substrate surface is uniform, there is a problem that the amount of In taken in by the composition of the mixed crystal layer is not uniform in the substrate surface due to the off-angle distribution in the substrate surface.

  Therefore, in the metal organic chemical vapor deposition apparatus 110, in order to grow an epitaxial thin film having uniform crystal characteristics on the substrate 111 having an asymmetric off-angle distribution, a temperature distribution capable of canceling the in-plane distribution of the epitaxial thin film. Form. Specifically, when the temperature distribution is constant, a substrate whose characteristic In composition is different in the substrate plane is used, the temperature distribution is formed in the substrate plane, and the film characteristic distribution is made uniform. For this reason, in order to generate an asymmetric temperature distribution in the substrate surface, a heat equalizing plate 114 having a groove processed on the surface with an asymmetric groove pattern with respect to the center is used in accordance with the off-angle distribution of the substrate 111. .

  Here, as an example, as shown in FIG. 2, in the soaking plate 114, the material is silicon carbide (SiC), the diameter is 52.6 mm, the thickness is 5.5 mm, and the regions A, B, It is divided into four regions C and D, and is arranged in the order of regions A, B, C, and D from one end of the soaking plate 114 in the X direction to the other end. In each of the regions A, B, and C, groove processing is performed, and striped unevenness is formed with the cross-sectional shape of the groove being a rectangle. The dimension of the region A in the X direction is 13.3 mm, which is the same as the dimension of the region D in the X direction. The dimension of the region B in the X direction is 13 mm, which is the same as the dimension of the region C in the X direction.

  In the region A, grooves having a width of 1 mm and a depth of 0.1 mm are formed at a pitch of 2 mm along the Y direction. In the region B, grooves having a width of 1 mm and a depth of 0.1 mm are formed at a pitch of 3 mm along the Y direction. In the region C, grooves having a width of 1 mm and a depth of 0.1 mm are formed at a pitch of 4 mm along the Y direction. In the region D, no groove is formed, and the region D is flat. That is, in the regions A, B, and C, grooves having a pitch increasing in the order of the regions A, B, and C are formed. In the region D, no groove is formed. That is, the grooves are formed so that the pitch increases or decreases from one end in the X direction to the other end of the soaking plate 114.

  Further, as shown in FIG. 3A, the soaking plate 114 is in contact with the back side of the main surface of the substrate 111. The substrate 111 is in contact with the regions A, B, C, and D in order from a region with a small off angle. Here, the groove portion of the soaking plate 114 is not in direct contact with the substrate 111, and the contact area between the nitride substrate 111 and the soaking plate 114 increases in the order of regions A, B, C, and D. . Accordingly, as shown in FIG. 3B, the surface temperature distribution of the substrate 111 is a temperature distribution in which the substrate temperature rises stepwise in the order of the portions corresponding to the regions A, B, C, and D. Is obtained. Thereby, the in-plane distribution of the In composition of the InGaN quantum well structure on the substrate 111 is canceled by the temperature distribution of the substrate 111.

<Comparison>
Here, a comparison result between the conventional metal organic vapor phase growth apparatus 10 and the metal organic vapor phase growth apparatus 110 in the present embodiment will be described. In metal-organic vapor phase growth of an InGaN quantum well structure, trimethylgallium (TMA) is used as a Ga source which is a group III source, and trimethylindium (TMI) is used as an In source. Ammonia (NH ₃ ) is used as an N raw material that is a group V source, and nitrogen (N) is used as a carrier gas. The wavelength of the photoluminescence emission peak (hereinafter referred to as PL peak) when an InGaN quantum well structure is epitaxially grown on a nitride semiconductor substrate at a substrate temperature of 800 ° C. using the conventional metal organic vapor phase growth apparatus 10. FIG. 4 shows the in-plane distribution. The wavelength distribution of the dotted line part shown in FIG. 4 is shown in FIG. FIG. 6 shows a PL peak wavelength distribution that changes according to the In composition growth temperature (substrate surface temperature) of the InGaN quantum well. When the InGaN quantum well structure is epitaxially grown on the nitride semiconductor substrate using the metal organic vapor phase growth apparatus 110, the wavelength distribution corresponding to the dotted line portion shown in FIG. 4 is shown in FIG.

  4, 5, and 7, the end of the nitride semiconductor substrate having the smaller off angle is set to 0 mm. FIG. 6 shows an epitaxial growth with the substrate surface temperature made uniform when the conventional metal organic vapor phase growth apparatus 10 is used. In addition, when the metal organic vapor phase growth 110 in the present embodiment is used, the PL wavelength distribution of the InGaN film generated from the substrate off-angle distribution is given as the growth temperature distribution by giving the substrate surface temperature distribution by the soaking plate 114. Are offset to achieve uniformization.

  First, it is assumed that a semiconductor element is fabricated on a nitride semiconductor substrate using the conventional metal organic vapor phase growth apparatus 10 shown in FIG. In this case, a conventional flat soaking plate 14 is used to form an epitaxial thin film on the nitride semiconductor substrate. Regarding the epitaxial thin film formed on the nitride semiconductor substrate, as shown in FIGS. 4 and 5, the distribution of the PL peak wavelength changes according to the off-angle distribution of the nitride semiconductor substrate. For example, in the region where the off-angle of the nitride semiconductor substrate is large, such as the position 0 mm-10 mm, a short wave PL peak wavelength is observed. In the region where the off-angle of the nitride semiconductor substrate is small, such as the position 30 mm-40 mm, a long-wave PL peak wavelength is observed.

  In contrast, it is assumed that a semiconductor element is fabricated on a nitride semiconductor substrate using the metal organic vapor phase growth apparatus 110. In this case, an epitaxial thin film is formed on the nitride semiconductor substrate using the soaking plate 114 in which the asymmetric groove pattern shown in FIG. 2 is formed. With respect to the epitaxial thin film formed on the nitride semiconductor substrate, the in-plane distribution is uniformly improved as compared with the wavelength distribution shown in FIG. 5 as the wavelength distribution shown in FIG. For example, in a region where the off-angle of the nitride semiconductor substrate is large, such as at a position of 0 mm-10 mm, the PL peak wavelength is long. In a region where the off-angle of the nitride semiconductor substrate is small, such as the position 30 mm-40 mm, the PL peak wavelength is short.

  In general, it is known that the in-plane distribution of the In composition of the InGaN quantum well structure changes according to the off-angle distribution of the nitride semiconductor substrate, as shown in FIGS. Further, it is known that the in-plane distribution of the In composition of the InGaN quantum well structure is strongly influenced by the growth temperature. As shown in FIG. 6, it can be seen that the PL peak wavelength increases as the growth temperature decreases, and the PL peak wavelength decreases as the growth temperature increases. That is, the in-plane distribution of the In composition of the InGaN quantum well structure is strongly influenced by the off-angle distribution of the nitride semiconductor substrate and the temperature distribution generated by the soaking plate. The result shown in FIG. 7 is that the in-plane In composition distribution caused by the off-angle distribution of the nitride semiconductor substrate is canceled by the temperature distribution generated by the soaking plate 114 in which the asymmetric groove pattern shown in FIG. 2 is formed. Is obtained.

Further, if the distribution of the PL peak wavelength changes according to the in-plane distribution of the In composition of the InGaN quantum well structure, it causes a decrease in yield in device fabrication.
In view of these points, when the metal organic vapor phase growth apparatus 110 is used, an InGaN quantum well structure In on the nitride semiconductor substrate is used as compared with the case where the conventional metal organic vapor phase growth apparatus 10 is used. The in-plane distribution of the composition can be reduced. Thereby, the yield in device fabrication can be improved.

<Summary>
As described above, in this embodiment, the asymmetric groove pattern is formed on the heat equalizing plate in accordance with the off-angle distribution of the substrate. This makes it possible to obtain a temperature distribution on the substrate surface that can cancel the in-plane distribution of the epitaxial thin film with respect to a substrate having asymmetric crystal characteristics in the plane, such as a nitride semiconductor substrate. Along with this, an epitaxial thin film with high uniformity within the substrate surface can be obtained. As a result, the yield in device fabrication can be improved.

(Embodiment 2)
Embodiment 2 according to the present invention will be described below.
<Configuration>
As shown in FIG. 8A, the heat equalizing plate 214 is different from the heat equalizing plate 114 in Embodiment 1 in that it is not in contact with the back side of the main surface of the substrate 111. Here, as an example, the interval between the soaking plate 214 and the substrate 111 is set to 150 μm. The depth of the groove is set to 100 μm. The distance between the groove region of the soaking plate 214 and the substrate 111 is a value (250 μm) obtained by adding the interval (150 μm) between the soaking plate 214 and the substrate 111 and the depth (100 μm) of the groove. At this time, as shown in FIG. 8B, as the surface temperature distribution of the substrate 111, there is a temperature distribution in which the substrate temperature gradually increases in the order of the portions corresponding to the regions A, B, C, and D. can get. This is because the amount of heat radiation received by the substrate 111 from the groove region of the soaking plate 214 decreases as the distance between the soaking plate 214 and the substrate 111 increases. As a result, even if a gap is provided between the heat equalizing plate 214 and the substrate 111 in a state where the heat equalizing plate 214 and the substrate 111 are parallel to each other, the difference between the amount of heat radiation received by the substrate 111 and the first embodiment. A temperature distribution with the same tendency as that occurs.

  The soaking plate 214 is subjected to the same groove processing as the soaking plate 114 in the first embodiment. In addition, the regions A, B, C, and D of the heat equalizing plate 214 correspond individually in order from the region with the smaller off angle of the substrate 111.

  As a result, as in the first embodiment, the In composition of the InGaN quantum well structure after epitaxial growth appears as an addition of the off-angle distribution of the substrate 111 and the temperature distribution generated by the soaking plate 214. From this, as shown in FIG. 9, the in-plane distribution is uniformly improved as compared with the PL peak wavelength shown in FIG. In FIG. 9, the end of the nitride semiconductor substrate with the smaller off angle is set to 0 mm.

<Summary>
As described above, in the present embodiment, even if the substrate 111 and the heat equalizing plate 214 are not in contact with each other, as in the first embodiment, compared with the case where the conventional flat heat equalizing plate 14 is used, The in-plane distribution of the In composition of the InGaN quantum well structure can be reduced. As a result, the yield in device fabrication can be improved.

<Modification>
(1) In Embodiment 1, the region of the soaking plate 114 is divided into four, but the number of divided regions may be increased in accordance with the size of the off-angle distribution of the substrate and the smoothing of the temperature distribution. . Similarly, in Embodiment 2, the region of the soaking plate 214 is divided into four, but the number of divided regions may be increased according to the size of the off-angle distribution of the substrate and the smoothing of the temperature distribution.

  (2) In the first embodiment, the depth of the groove is 0.1 mm. However, the depth of the groove may be changed to about 2 mm according to the thickness of the heat equalizing plate 114, or for each region. The depth of the groove may be changed. Similarly, in the second embodiment, the depth of the groove is 0.1 mm. However, the depth of the groove may be changed to about 2 mm according to the thickness of the heat equalizing plate 214, or the groove depth may be changed for each region. The depth of the may be changed.

  (3) In Embodiment 1, the width of the groove is 1 mm. However, the width of the groove may be changed within a range of 0.4 mm or more and 1 mm or less, and the width of the groove is changed for each region. It may be allowed. In Embodiment 2, the width of the groove is 1 mm. However, the width of the groove may be changed within a range of 0.4 mm or more and 1 mm or less, or the width of the groove may be changed for each region.

  (4) In Embodiment 1, the groove pitch is 2 mm or more, but the groove pitch may be changed according to the groove width. Preferably, the pitch is 0.8 mm or more. Similarly, in Embodiment 2, the groove pitch is 2 mm or more, but the groove pitch may be changed according to the groove width. Preferably, the pitch is 0.8 mm or more.

(5) In the second embodiment, the interval between the soaking plate 214 and the substrate 111 is 150 μm, but it is sufficient that an interval of 10 μm or more is provided.
(6) In the first and second embodiments, the cross-sectional shape of the groove is rectangular, but the cross-sectional shape of the groove may be triangular as shown in FIG. When the cross-sectional shape of the groove is a triangle, the amount of heat radiation per unit region received by the substrate 111 from the heat equalizing plate 314 can be increased compared to the case where the cross-sectional shape of the groove is a rectangle. Furthermore, by increasing the distance between the soaking plate 314 and the substrate 111 to 300 μm or more, the influence of thermal radiation due to the difference in surface area within the groove region of the soaking plate 314 can be made remarkable. At this time, the surface area of each region decreases in the order of regions A, B, C, and D. For this reason, the heat obtained by heat radiation from the soaking plate 314 decreases in the order of the regions A, B, C, and D. As shown in FIG. 10B, as the surface temperature distribution of the substrate 111, a temperature portion in which the substrate temperature decreases step by step in the order corresponding to the regions A, B, C, and D may be obtained. It becomes possible. Thus, by controlling the distance between the heat equalizing plate 314 and the substrate 111, the temperature distribution in the regions A, B, C, and D can be set higher or lower stepwise.

  (7) In the first and second embodiments, the metal organic vapor phase growth apparatus having the self-revolution function is used, but the surface of the substrate 111 is also used in the metal organic vapor phase growth apparatus having only the revolution function. It is possible to create temperature non-uniformity and a similar effect can be obtained.

  (8) Although the face-down type metal organic vapor phase growth apparatus is used in the first and second embodiments, a face up type metal organic vapor phase growth apparatus may be used.

  The present invention can be used as a metal organic vapor phase epitaxy apparatus having a soaking plate for improving the in-plane uniformity of the composition of an epitaxial thin film.

DESCRIPTION OF SYMBOLS 10 Organometallic vapor phase growth apparatus 11 Board | substrate 12 Susceptor 12a Inner periphery 12b Outer periphery 13 Heater 14 Soaking plate 14a Inclined surface 16 Gas supply port 17 Gas exhaust port 18 Reactor 110 Organometallic vapor phase growth apparatus 111 Substrate 112 Susceptor 113 Heater 114 Soaking plate 115 Substrate holder 116 Gas supply port 117 Gas exhaust port 118 Reactor 214 Soaking plate 314 Soaking plate

Claims (8)

A vapor phase growth apparatus for forming an epitaxial thin film on a main surface of a substrate having an asymmetric off-angle distribution,
Grooving is performed on the surface with an asymmetrical groove pattern according to the off-angle distribution of the substrate, and the soaking is arranged so that the grooved surface faces the back side of the main surface of the substrate The board,
A susceptor in which the substrate is disposed in a rotating portion with the main surface of the substrate facing down, and the substrate and the soaking plate rotate together in the circumferential direction;
A vapor phase growth apparatus comprising: heating means for heating the substrate through the soaking plate to generate an asymmetric temperature distribution in the substrate surface. 2. The vapor phase growth apparatus according to claim 1, wherein the surface of the soaking plate is divided into a plurality of regions, and irregularities are formed in different forms for each region. The vapor phase growth apparatus according to claim 2, wherein grooves having different depths are formed for each region. The vapor phase growth apparatus according to claim 2, wherein grooves having different pitches are formed for each region. The vapor phase growth apparatus according to claim 1, further comprising holding means for holding the substrate and the soaking plate and rotating them together. The vapor phase growth apparatus according to claim 1, wherein the soaking plate is in contact with the substrate. The vapor deposition apparatus according to claim 1, wherein the soaking plate is not in contact with the substrate. A vapor phase growth method for forming an epitaxial thin film on a main surface of a substrate having an asymmetric off-angle distribution,
Arranging the substrate on the rotating part of the susceptor with the main surface of the substrate facing down,
A heat equalizing plate having a grooved surface with an asymmetrical groove pattern according to the off-angle distribution of the substrate is disposed so that the grooved surface faces the back side of the main surface of the substrate. And
The substrate and the soaking plate are rotated together in the circumferential direction by the susceptor, and the substrate is heated by the heating means through the soaking plate, thereby generating an asymmetric temperature distribution in the substrate surface. Vapor phase growth method.

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