TW201306167A - Substrate support device and vapor phase growth device - Google Patents

Abstract

The substrate supporting device of the present invention comprises: a base (101); a spacer (103) disposed on the base (101) and supporting a portion of the substrate (105); and a base cover (102) disposed on the base (101) and the spacer (103) include a through hole (104) for accommodating the substrate (105). The base cover (102) has a positioning portion for positioning the spacer (103) at a specific position of the through hole (104).

Description

Substrate support device and vapor phase growth device

The present invention relates to a substrate supporting device, and more particularly to a substrate supporting device used in a vapor phase growth device for forming a compound semiconductor on a substrate.

Semiconductor light-emitting elements such as light-emitting diode elements and laser diode elements are considered to be widely used in high-density optical disks and full-color displays, and in the environmental or medical field. A chemical vapor deposition method (CVD: Chemical Vapor Deposition) is generally used as a method of manufacturing a semiconductor light-emitting device. According to this chemical vapor phase growth method, a vapor phase growth apparatus generates a film of a compound semiconductor crystal by vapor-phase growing a reaction gas on a heated substrate in a reaction chamber. Such a vapor phase growth apparatus generally requires a high degree of improvement in the quality of a film of a compound semiconductor crystal while suppressing the production cost to maximize the yield and productivity.

The film formation of the compound semiconductor crystal is carried out by supplying a reaction gas onto the heated substrate. At this time, since the compound semiconductor crystal is also formed on the susceptor of the support substrate, it is necessary to remove the compound semiconductor crystal formed on the susceptor each time the film formation of the substrate is completed. Since the vapor phase growth apparatus cannot be used during the removal of the compound semiconductor crystal on the susceptor, the compound semiconductor cannot be crystallized on a new substrate, and the productivity is lowered. Further, when the susceptor in which the compound semiconductor crystal is formed is replaced with a new susceptor, the compound semiconductor crystal formed on the substrate differs due to individual differences between the susceptors, and the yield is lowered.

FIG. 14A is an exploded perspective view of the substrate supporting device disclosed in Japanese Laid-Open Patent Publication No. 2006-173560 (Patent Document 1). Fig. 14B is a perspective view for explaining the substrate supporting device disclosed in Patent Document 1. Patent Document 1 discloses a technique including a susceptor (a wafer holder of Patent Document 1) 63, a susceptor cover (a wafer guide of Patent Document 1) 17 and a spacer 65 disposed on a susceptor 63. .

As shown in FIGS. 14A and 14B, the substrate 19 (wafer of Patent Document 1) is supported by a spacer 65 and housed in a through hole (opening of Patent Document 1) 17b of the base cover 17. By covering the susceptor 63 with the susceptor cover 17, the formation of the compound semiconductor crystal on the susceptor 63 is prevented. The compound semiconductor crystal is formed on the susceptor cover 17, but since it can be washed by replacing only the susceptor cover, productivity and yield can be prevented from being lowered.

Prior technical literature Patent literature

Patent Document 1: Japanese Patent Laid-Open Publication No. 2006-173560

Fig. 15 is an explanatory view for explaining the problems of the prior art, and is a cross-sectional view as seen from the direction of IV-IV' of Fig. 14B. When a thin film of a compound semiconductor crystal is formed on a substrate 19 heated by a heater (not shown), if the lattice constant of the compound semiconductor crystal is smaller than that of the substrate 19, as shown in FIG. 15, the substrate 19 and the compound semiconductor are crystallized. The difference in thermal expansion causes the substrate 19 to warp convexly downward.

At this time, if the spacer 65 supports the base as described in Patent Document 1, The entire surface of the lower surface of the plate 19 changes the degree of contact between the substrate 19 and the spacer 65. In other words, when the substrate 19 is warped, the center portion of the substrate 19 is in contact with the spacer 65, and the peripheral portion of the substrate 19 is not in contact with the spacer 65. Therefore, the substrate temperature differs between the center portion and the outer peripheral portion of the substrate 19.

If the temperature distribution between the central portion and the outer peripheral portion of the substrate 19 is different, the substrate may be broken due to local heating of the central portion. Further, even when the substrate is not broken, if the compound semiconductor crystal grows in a state where the temperature distribution of the substrate 19 is different, the crystallinity and thickness of the compound semiconductor crystal do not become different due to the conditions under growth. It is uniform and the quality of the compound semiconductor crystal is lowered. Further, in the case of forming a semiconductor light-emitting device, the semiconductor light-emitting device formed at the central portion of the substrate 19 and the semiconductor light-emitting device formed on the outer peripheral portion of the substrate 19 have different wavelengths of light emission and light-emitting intensity.

Fig. 16 is an explanatory view for explaining an improvement of the substrate supporting device. As shown in FIG. 16, in the improvement, the entire surface of the lower surface of the substrate 19 is not supported, and a support portion 18b is provided in the through hole 18a of the base cover 18 to support a portion of the substrate 19, and the substrate 19 and the base are provided. There is a gap between 63.

By the gap between the substrate 19 and the susceptor 63, the central portion of the substrate 19 can be prevented from coming into contact with the susceptor 63 even when the substrate 19 is convexly warped downward. By reducing the contact area between the substrate 19 and the support portion 18b while suppressing the heat transfer from the contact portion, the substrate 19 is heated by the radiant heat from the susceptor 63, whereby the degree of contact with the susceptor 63 can be eliminated. The substrate 19 is uniformly heated.

Figure 17 is a diagram for explaining the improvement of the substrate supporting device shown in Figure 16 An illustration of the problem. Since the compound semiconductor crystal is also formed on the susceptor lid 18 when the film-forming compound semiconductor is crystallized, as shown in FIG. 17, the susceptor lid 18 is warped due to the difference in thermal expansion between the susceptor lid 18 and the compound semiconductor crystal. Due to the warpage of the susceptor cover 18, the support height of the substrate 19 supported by the support portion 18b is changed, so that the distance between the susceptor 63 and the substrate 19 is changed, and the substrate 19 heated by the radiant heat from the susceptor 63 is changed. The surface temperature varies.

The present invention has been made to solve the above problems, and an object of the invention is to provide a substrate supporting device and a vapor phase growth device which can suppress a difference in surface temperature of a substrate and can form a compound semiconductor crystal having stable quality on a substrate.

A substrate supporting device according to a first aspect of the present invention includes a substrate, a spacer, a spacer disposed on the base and supporting a portion of the substrate, and a base cover disposed on the base and the spacer And including a through hole for accommodating the substrate. The base cover has a positioning portion for positioning the spacer at a specific position of the through hole.

In one aspect of the invention, the positioning portion covers one of the spacers and restricts movement of the spacer in at least one direction.

In one aspect of the invention, the base cover includes a plurality of positioning portions.

In one aspect of the invention, the base cover has a plurality of positioning portions at a position inscribed in the apex of the regular polygon of the through hole.

In one aspect of the invention, the base cover includes a plurality of the through holes. Each of the plurality of through holes has a plurality of positioning portions on a concentric circumference.

In one aspect of the invention, the spacer includes a hole for providing a gap between the substrate and the base.

The substrate supporting device according to the second aspect of the present invention supports the substrate, and includes: a susceptor; a plurality of spacers disposed on the pedestal and supporting one portion of the substrate; and a pedestal cover disposed on the pedestal The through hole includes a through hole, and the fixing member is disposed on the base and received in the through hole. The fixing member has a positioning portion that positions a plurality of spacers at a specific position.

In one aspect of the invention, the positioning portion surrounds a portion of the spacer and limits movement of the spacer in a horizontal direction.

In one aspect of the invention, the fixing member has a plurality of positioning portions at positions at which the vertices of the regular polygons of the concentric circles of the through holes are inscribed.

In one aspect of the invention, the fixing member includes a slit.

In one aspect of the invention, the base cover positions the stationary member.

In one aspect of the invention, the base cover includes a plurality of through holes, and the fixing members housed in the plurality of through holes are positioned such that the plurality of spacers are located on the concentric circumference.

The vapor phase growth apparatus according to the present invention includes the substrate supporting apparatus of any of the above.

In the substrate supporting device having the above configuration, a portion of the substrate is supported by the spacer and a gap is provided between the substrate and the pedestal, whereby the substrate can be brought into contact with the spacer even when the substrate is warped. The degree is fixed and supports the substrate. Moreover, since the base, the base cover, and the spacer are separately formed, even if the base cover is warped, it can be separated by The piece supports the substrate at a fixed height. Further, since the spacer is positioned, the substrate can be supported by the spacer at the same position every time the substrate is replaced with the next substrate.

According to the present invention, by supporting the substrate under a certain condition by using the positioning spacer and suppressing the difference in surface temperature of the substrate, the stable-saturated compound semiconductor crystal can be formed on the substrate.

(Example 1)

Hereinafter, a first embodiment of the present invention will be described based on Figs. 1 to 5 . Fig. 1 is a perspective view of a substrate supporting device according to a first embodiment of the present invention. As shown in Fig. 1, a substrate supporting device 100 according to a first embodiment of the present invention includes a susceptor 101, a susceptor cover 102 disposed on a susceptor 101, and spacers 103 (103a, 103b, 103c). The base cover 102 has a through hole 104. The substrate 105 is housed in the through hole 104 with a slight gap and is supported by the spacer 103. The compound semiconductor crystal is formed on the upper surface of the substrate 105.

In the present embodiment, three spacers 103 (103a, 103b, 103c) are provided, but the number of the spacers 103 is not limited, and may be two or four if the substrate 105 can be stably supported. the above.

However, the spacer 103 preferably has a very small shape (for example, a width of 1 to 3 mm, a length of 3 to 5 mm, and a thickness of the substrate 105) in order to suppress local heating of the substrate 105 due to heat conduction from the contact surface with the substrate 105. 0.1~0.5 mm). In order to stably support the substrate 105 by the spacer 103 having a very small shape, the spacer 103 is preferably three or more.

In addition, all of the substrate 105 are heated, the spacer 103 are all set to the same shape and are arranged symmetrically from the center O _1. Here, the center O ₁ is the intersection of the upper surface of the pedestal 101 and the central axis of the through hole 104. The central angle is equal to each other so that the abutment between the central spacer 103 O ₁ of each other as the respective centers are arranged three spacers 103 (103a, 103b, 103c) . For example, the spacer 103 is disposed at a position inscribed at the vertex of the regular polygon of the through hole 104. In the present embodiment, the spacer 103 is disposed at a position inscribed in the apex of the equilateral triangle of the through hole 104. Alternatively, the spacer 103 may be disposed at a position symmetrical with respect to a point where the center O ₁ is a symmetrical point.

When the spacer 103 is formed in a small shape, the spacer 103 is easily moved when the substrate on which the film formation process is completed is replaced with a new one. When the moving spacer 103 is disposed again, if the spacer 103 is disposed at a position different from that of the previous film forming process, the condition for supporting the new substrate is different from the supporting condition of the substrate for the previous processing. The surface temperature of the substrate changes during the film. Therefore, in the present embodiment, the spacer 103 can be positioned by the susceptor cover 102 in order to support the substrate under the same conditions every time the substrate is replaced.

Figure 2 is a cross-sectional view of the substrate supporting device taken along line IO ₁ -I' of Figure 1. As shown in FIG. 2, a part of the base cover 102 is disposed above the spacer 103. That is, the base cover 102 has positioning portions 106 (106a, 106b, 106c (not shown)) for positioning the spacers 103 (103a, 103b, 103c) at specific positions of the through holes 104.

The positioning portion 106 covers a portion of the spacer 103. Moving the outer diameter direction of the spacer member covered by the positioning unit 106,103 orientation (along the center O of the concentric circle of radius _a and the direction away from the center O ₁₎ and the circumferential direction (the circumferential direction along the center O of the concentric _{circle. 1)} Is limited.

The spacer 103 is disposed at the above position, and the base cover 102 has a positioning portion 106 at a position symmetrical from the center O ₁ . In the present embodiment, as described above, the positioning portion 106 is provided at the apex of the equilateral triangle that is inscribed in the through hole 104. The substrate 105 is placed on a portion of the spacer 103 that is not covered by the positioning portion 106.

The spacer 103 supports the outer peripheral portion of the substrate 105 such that a gap is provided between the central portion of the substrate 105 and the susceptor 101. The height of the spacer 103 is set to a height at which the substrate 105 does not contact the susceptor 101 even when the substrate 105 is convexly warped downward. For example, when the substrate 105 is warped by a maximum of 150 μm, the height of the spacer 103 is set to 200 μm. Further, the height of the susceptor cover 102 is set so as to form a film without disturbing the flow of the reaction gas, and is set to match the height of the substrate 105 supported by the spacer 103.

The positioning portion 106 and the spacer 103 may not be in contact at all, or may have a slight gap between each other. When the spacer 103 is disposed, the base cover 102 is first placed on the base 101. Thereafter, the spacer 103 that has passed through the through hole 104 of the susceptor cover 102 and disposed on the susceptor 101 is moved outward in the radial direction and inserted into the positioning portion 106.

Fig. 3A is a cross-sectional view showing a cross section of a peripheral portion of a positioning portion and a spacer in the base cover. Fig. 3B is a bottom plan view showing a peripheral portion of the positioning portion in the base cover and a bottom surface (surface on the base side) of the spacer.

The positioning portion 106a is formed to match the shape of the spacer 103a. As shown in FIG. 3A, the ABC portion of the cross section of the positioning portion 106a is formed to coincide with the DEF portion of the cross section of the spacer 103a. Depth of the positioning portion 106a (length of the AB portion) The length of the spacer 103a (the length of the ED portion) is shorter. Thereby, when the spacer 103a is inserted into the positioning portion 106a, the spacer 103a abuts against the inside (BC portion) of the positioning portion 106a so that the movement in the diametrical outer side is restricted, and one of the spacers 103a becomes the unpositioned portion 106a. The status of the coverage. As described above, the substrate 105 is placed on the portion of the spacer 103a that is not covered by the positioning portion 106a.

Further, the height of the positioning portion 106a (the length of the BC portion) is formed to be slightly higher than the height of the spacer 103a (the length of the EF portion).

As shown in FIG. 3B, the GHIJ portion of the bottom surface of the positioning portion 106a is formed to coincide with the KLMN portion of the bottom surface of the spacer 103a. The width of the positioning portion 106a (the length of the HI portion and the GJ portion) is formed to be slightly wider than the width of the spacer 103a (the length of the LM portion and the KN portion). Thereby, the spacer 103a covers the positioning portion 106a while maintaining a gap. The same applies to the spacers 103b and 103c and the positioning portions 106b and 106c.

Fig. 4 is an explanatory view for explaining a state in which the base cover is warped. When a thin film of a compound semiconductor crystal is formed on the substrate 105, the compound semiconductor crystal is also formed on the susceptor lid 102. For example, when the susceptor cover 102 is made of quartz and the gallium nitride is formed as a compound semiconductor crystal, the linear expansion coefficient of the susceptor cover 102 is 0.4×10 ^-6 /K, and the linear expansion coefficient of the compound semiconductor crystal is 5.6×10 ^{− 6} / K. Due to the difference in linear expansion coefficient between the susceptor cover 102 and the compound semiconductor crystal, warpage occurs on the susceptor cover 102 as shown in FIG.

As shown in FIG. 4, when the support portion of the support substrate 105 is integrally formed as the base cover 102, the support portion is floated due to the warpage of the base cover 102. Since the height of the support substrate 105 changes, the surface temperature of the substrate 105 heated by the radiant heat of the susceptor 101 becomes uneven. Similarly, even if the spacer 103 is fixed to the positioning portion 106, the height of the support substrate 105 changes due to the warpage of the base cover 102.

The spacer 103 of the present embodiment is covered by the positioning portion 106 and is independent of the base cover 102. Therefore, even if warpage occurs on the susceptor cover 102, the height of the support substrate 105 is constant and fixed, and the difference in surface temperature of the substrate 105 can be suppressed.

In the present embodiment, the spacer 103 is a rectangular parallelepiped, but the shape of the spacer 103 is not limited thereto, and may be any shape. The shape of the positioning portion 106 is appropriately set in accordance with the shape of the spacer 103, and the shape of the positioning portion 106 may be any shape as long as the position of the spacer 103 can be defined.

The spacer 103 may be inside (the center O along a radius of _a concentric circle of center O ₁ close to the direction) in the radial direction, but at the time of film formation in the state where the substrate support 105, the spacer 103 and the base 101 or by The substrate 105 is rubbed without moving. The movement of the spacer 103 to the inner side in the diametrical direction may be restricted by the shape of the spacer 103 and the positioning portion 106, and the spacer 103 and the positioning portion 106 may have a shape as shown in FIG. 5, for example.

Fig. 5 is an explanatory view for explaining another example of the spacer. The bottom surface of the base cover 102 and the spacer 103 is shown in FIG. As shown in FIG. 5, the spacer 103a is formed in a triangular column shape, and when the positioning portion 106a (PQRS) is formed in conformity with the spacer 103a, the interval between the portions (QR) of the positioning portion 106a is made larger than the positioning portion 106a. The positioning portion 106a can also restrict the movement of the spacer 103a in the diametrical inner side at the interval of the inlet portion (PS).

When the base cover 102 and the spacer 103 having such a configuration are provided, after the spacer 103 is placed on the base 101, the spacer 103 is inserted into the positioning portion 106, and the base cover 102 is placed on the base 101.

In this embodiment, by providing a portion of the substrate 105 and providing a gap between the substrate 105 and the susceptor 101, it is possible to suppress a change in the degree of contact between the substrate 105 and the susceptor 101 due to warpage of the substrate 105, and The substrate 105 can be supported with a fixed degree of contact. Further, the base cover 102 and the spacer 103 are independent of each other, and even if the base cover 102 is warped, the height of the spacer 103 does not change, and the substrate 105 can be supported at a fixed height. As a result, the difference in the surface temperature of the substrate 105 can be suppressed, and the thin film of the compound semiconductor crystal having stable quality can be formed.

In the present embodiment, since the spacer cover 102 positions the spacer 103, even if the substrate on which the film forming process is completed is replaced with a new substrate, the new substrate can be supported by the spacer 103 under the same conditions, and It is possible to suppress the difference between the substrates and form a film.

(Example 2)

Embodiment 2 of the present invention will be described based on Figs. 6 to 8 . Figure 6 is a perspective view of a substrate supporting device of Embodiment 2 of the present invention. As shown in FIG. 6, the substrate supporting device 200 according to the second embodiment of the present invention includes a susceptor 201, a susceptor cover 202 disposed on the susceptor 201, and a spacer 203.

The base cover 202 has a through hole 204 and houses a spacer 203. The spacer 203 includes a hole concentric with the through hole 204, and a peripheral portion of the support substrate 205 is provided with a gap between the central portion of the substrate 205 and the susceptor 201. The substrate 205 is housed in the through hole 204 while being held by a small gap, and is supported by the spacer 203. Here, the intersection of the upper surface of the center O ₂ base 201 and the central axis of the through hole 204.

Figure 7 is a cross-sectional view of the substrate supporting device as seen from the direction of the arrow II-II' of Figure 6. As shown in FIG. 7, one portion of the base cover 202 is disposed above the spacer 203. The base cover 202 has a positioning portion 206 at a specific position of the through hole 204. The positioning portion 206 covers a portion of the spacer 203 and restricts the movement of the spacer 203 in the horizontal direction. The positioning portion 206 and the spacer 203 may not be in contact at all, or may have a slight gap between each other.

The substrate 205 is placed on a portion of the spacer 203 that is not covered by the positioning portion 206. In the same manner as in the first embodiment, the height of the spacer 203 is set to a height at which the substrate 205 and the susceptor 201 are not in contact with each other even if the substrate 205 is convexly curved downward. The height of the susceptor cover 202 is set so as to form a film without disturbing the flow of the reaction gas, and is set to match the height of the substrate 205 supported by the spacer 203.

Fig. 8 is an explanatory view for explaining the positioning portion of the embodiment. In FIG. 8, a perspective view of the base cover 202 and the spacer 203 is shown from the side of the base 101 (bottom side).

As shown in FIG. 8, the positioning portion 206 is formed in a stepped shape in the through hole 204 of the base cover 202. The spacer 203 covers the outer peripheral portion by the positioning portion 206, and supports the substrate 205 at the inner peripheral portion.

When the base cover 202 and the spacer 203 are disposed on the base 201, the spacer 203 is first placed on the base 201, and then the base cover 202 is placed on the base 201 so as to receive the spacer 203. On the spacer 203.

In the present embodiment, the spacer 203 is not composed of a plurality of members, so Moreover, the operations of the processing and arrangement work of the spacer 203 can be easily performed.

(Example 3)

Embodiment 3 of the present invention will be described based on Figs. 9 to 11 . Figure 9 is a perspective view of a substrate supporting device of Embodiment 3 of the present invention. As shown in FIG. 9, the substrate supporting device 300 includes a base 301, a base cover 302 disposed on the base 301, spacers 303 (303a, 303b, and 303c), and a fixing member 304.

The base cover 302 has a through hole 305 and houses the fixing member 304. The fixing member 304 positions the spacer 303 at a position symmetrical from the center O ₃ . The substrate 306 has a slight gap and is accommodated in the through hole 305 and supported by the spacer 303. Here, the intersection of the upper surface of the center O ₃ fixing member 304 and the central axis of the through hole 305.

Fig. 10 is an explanatory view for explaining the spacer and the fixing member of the embodiment. As shown, the fixing member 304 to the center line O ₃ as 10 and has a central disk-shaped through holes 305 of substantially the same radius, with the outer periphery of the contact portion disposed in the through hole 305 to restrict the movement in the horizontal direction.

The fixing member 304 includes a positioning portion 307 (307a, 307b, 307c). The positioning portion 307 surrounds a portion of the spacer 303 to position the spacer 303. The positioning portion 307 is formed to penetrate the upper surface and the lower surface of the fixing member 304. The spacer 303 restricts the movement in the horizontal direction by being inserted into the positioning portion 307.

Further, the fixing member 304 includes a slit 308 (308a, 308b, 308c) which leads from the positioning portion 307 to the outer edge, by which the deformation due to thermal expansion is reduced. The base cover 302 and the fixing member 304 may not be in contact at all, or may have a slight gap therebetween. Similarly, spacer 303 and fixed structure The pieces 304 may be completely untouched or may have a slight gap between each other.

In the present embodiment, three spacers 303 (305a, 305b, and 305c) are disposed, but the number of the spacers 303 is not limited, and may be two when the substrate 306 can be stably supported, or may be 4 or more.

In the same manner as in the first embodiment, the spacer 303 is preferably in a small shape in order to suppress local heating of the substrate 306 due to heat conduction from the contact surface. In order to stably support the substrate 306 by the spacer 303 having a small shape, the spacer 303 is preferably three or more.

The spacers 303 may have any shape as long as they are all the same shape, and the positioning portion 307 is formed to conform to the shape of the spacer 303. The fixing member 304 has a positioning portion 307 at a position symmetrical from the center O ₃ . In other words, the positioning portion 307 is disposed such that the center angles of the positioning portions 307 adjacent to each other are equal to each other on the circumference of the center O ₃ . In the present embodiment, the positioning portion 307 is disposed at the apex of an equilateral triangle that is inscribed in the circumference of the center O ₃ (concentric circles of the through holes 305).

Figure 11 is a cross-sectional view of the substrate supporting device taken along line III-III' of Figure 9. As shown in FIG. 11, the height of the susceptor cover 302 is set so as to form a film without disturbing the flow of the reaction gas, and is set to match the height of the substrate 306 supported by the spacer 303.

The height of the fixing member 304 is lower than the height of the spacer 303. The substrate 306 is supported by the spacer 303 in such a manner as to provide a gap with the fixing member 304. That is, the height of the spacer 303 and the fixing member 304 is set to a height at which the substrate 306 and the fixing member 304 are not in contact with each other even if the substrate 306 is convexly warped. Portions of the cutout 308 of the securing member 304 are not in contact with the base cover 302, However, by causing the peripheral portion of the front side of the slit 308 to contact the base cover 302, the movement of the fixing member 304 in the horizontal direction is restricted.

The spacer 303 is positioned by the fixing member 304 that restricts the movement in the horizontal direction by the base cover 302, thereby restricting the movement in the horizontal direction. The fixing member 304 can rotate through the vertical line of the center O ₃ as a central axis, but does not rotate at the time of film formation due to friction with the susceptor 301. When the fixing member 304 is rotated when the substrate on which the film forming process is completed is replaced with a new substrate, the position of the spacer 303 with respect to the susceptor 301 is changed. Therefore, the through hole 305 can also position the fixing member 304. .

For example, the convex portion may be provided on the outer peripheral portion of the fixing member 304, and the convex portion may be covered by the base cover 302 to be positioned. Alternatively, a mark may be provided in the through hole 305 so that the fixing member 304 is disposed such that the slit 308 is aligned with the mark.

In the present embodiment, since the susceptor 301 is covered by the susceptor cover 302 and the fixing member 304, the crystallization of the compound semiconductor on the susceptor 301 can be effectively prevented.

(Example 4)

Embodiment 4 of the present invention will be described based on Fig. 12 . Figure 12 is a plan view showing a substrate supporting device of Embodiment 4 of the present invention. As shown in FIG. 12, the substrate supporting device 400 includes a base 401, a base cover 402 disposed on the base 401, and a spacer 403.

The base cover 402 includes a plurality of through holes 404a to 404h. The spacer 403 is disposed in each of the plurality of through holes 404a to 404h. The through holes 404a to 404h accommodate the substrates. Each substrate is disposed in each of the through holes 404a to 404h The spacer 403 is supported.

The inner side of each of the through holes 404a to 404h includes the same structure as any of the first to third embodiments. For example, spacers 403 (403a, 403b, and 403c) similar to those in the first embodiment are disposed inside the through holes 404a. The spacer 403 is positioned by the positioning portion 405 (405a, 405b, 405c). The spacer 403 having the same structure as the spacer 403 disposed in the through hole 404a inside the other through holes 404b to 404h is also positioned by the positioning portion 405.

In order to support the substrate of the same shape, each of the through holes 404a to 404h has the same shape. In order to make the film quality of the film formed on each substrate uniform, the susceptor 401 is rotated about a vertical line passing through the center O ₄ , and the susceptor cover 402 and the spacer 403 are also combined with the rotation of the susceptor 401. Rotate. In order to support each substrate under the same conditions, the base cover 402 has through holes 404a to 404h at a distance equal to the center O ₄ . In the present embodiment, eight through holes 404a to 404h are provided, and the number of through holes is not limited to a few.

In order to support the respective substrates under the same conditions, it is preferable that the spacers 403 are disposed to be the same inside the respective through holes 404a to 404h. The spacer 403a disposed in each of the through holes 404a to 404h is disposed on a circumference centered on the center O ₄ . The spacers 403b and 403c disposed in the respective through holes 404a to 404h are also disposed on the circumference around the center O ₄ in the same manner.

That is, the through holes 404a ~ 404h O ₄ at the center portion 405a is positioned on a concentric circle having a circumferential centers. In the present embodiment, the base cover 402 has a positioning portion 405a at a position closest to the center O ₄ of each of the through holes 404a to 404h, and is formed at an apex of an equilateral triangle that is inscribed in each of the through holes 404a to 404h. The position has positioning portions 405b, 405c.

Table 1 is a table showing the distribution of the average value (film thickness) and thickness of the thickness of the film of each of the substrates in the examples obtained by using the substrate supporting device shown in Fig. 12 in a plurality of substrates and the following comparative examples. In the comparative example, a film including a plurality of through holes similar to the substrate supporting device 400 and each of the through holes including the substrate supporting device of the supporting portion shown in FIG. 16 was used to form a film on a plurality of substrates.

In the measurement of the thickness of the film in the examples and the comparative examples, a dummy substrate was placed in one of the eight through holes, and seven substrates of P1 to P7 were placed in the remaining through holes, and each of the substrates was measured. The distribution of film thickness and thickness.

As shown in Table 1, when the substrate is supported by the substrate supporting device 400, the average value of the thickness of the film between the substrates of P1 to P7 becomes uniform, and the difference between the plurality of substrates is suppressed. Further, when the substrate is supported by the substrate supporting device 400, the value of the thickness distribution becomes small, and the difference in thickness in one substrate is also suppressed.

In the embodiment, when the spacer is configured as in the third embodiment, the base cover has a plurality of through holes at a distance equal to the central axis of the rotation of the base, and each of the through holes accommodates the spacer of the same shape and Fixed component. At this time, it is preferable that the spacer of each of the through holes is disposed on a concentric circumference centered on the center O ₄ .

Therefore, it is preferable that the base cover positions the fixing members of the through holes so that the spacers of the respective through holes are located on the concentric circumference centered on the center O ₄ . For example, the base cover can also position the fixing member such that one of the slits is located closest to the center O ₄ of each of the through holes.

Further, in the present embodiment, even if the spacer is configured as in the second embodiment, the base cover has a plurality of through holes at a distance equal to the central axis of the rotation of the base, and each of the through holes accommodates the same shape. Spacer.

In the present embodiment, since a plurality of substrates can be supported under the same conditions, even if a plurality of substrates are simultaneously processed, variations in characteristics between the films formed on the respective substrates can be suppressed.

Hereinafter, a vapor phase growth apparatus including the substrate supporting device of the present invention will be described based on Fig. 13 . Fig. 13 is an explanatory view for explaining the configuration of the vapor phase growth apparatus of the present invention. As shown in FIG. 13, the vapor phase growth device 510 has a substrate supporting device 500 inside the reaction chamber 511.

The substrate supporting device 500 includes a base 501, a base cover 502 disposed on the base 501, and a spacer 503. The base cover 502 includes a through hole 504 that receives the substrate 505. The substrate 505 is housed in the through hole 504 and supported by the spacer 503. The spacer 503 is positioned by the positioning portion 506 of the base cover 502. Since the substrate supporting device 500 has the same configuration as the substrate supporting device described in any of the first to fourth embodiments, the detailed description thereof will not be repeated.

The reaction chamber 511 is internally provided with a substrate supporting device 500 and supports the substrate The holding device 500 is isolated from the atmosphere. A gas supply pipe 512 is connected to the reaction chamber 511. The gas supply source 513 supplies the reaction gas and the carrier gas to the reaction chamber 511 via the gas supply pipe 512.

A shower head 514 is disposed above the reaction chamber 511. The supplied reaction gas is uniformly introduced into the entire reaction chamber 511 via the shower head 514. Further, the reaction chamber 511 exhausts the gas inside through the gas exhaust pipe 515, and the exhausted gas is depleted by the exhaust gas treatment device 516.

The substrate supporting device 500 is disposed to face the shower head 514 inside the reaction chamber 511. Further, the substrate supporting device 500 is disposed on the rotating device 517. The rotating device 517 rotates the substrate supporting device 500. A heater 518 is disposed under the substrate support device 500. The heat of the heater 518 is supplied to the substrate 505 via the susceptor 501.

In the vapor phase growth apparatus 510, a reaction gas is supplied to the heated substrate 505 to form a thin film of the compound semiconductor crystal. a mixture of an organometallic gas such as trimethylgallium or trimethylaluminum in a reaction gas system with a hydrogen compound gas such as ammonia (NH ₃ ), phosphine (PH ₃ ) or hydrazine (AsH ₃ ) . These reaction gas systems are introduced into the reaction chamber 511 together with a carrier gas such as nitrogen (N ₂ ). For example, when trimethylgallium (TMG) and ammonia (NH ₃ ) are introduced as a reaction gas and vapor-phase-growth, a film of gallium nitride (GaN) is formed on the substrate 505.

In order to supply heat generated from the heater 518 to the substrate, the susceptor 501 preferably contains a material having a high thermal conductivity. Further, the material of the susceptor 501 must have, for example, corrosion resistance to a reaction gas or high temperature resistance (heat resistance) in addition to a high thermal conductivity. Therefore, the pedestal 501 is, for example, made of graphite (carbon), applied thereto. SiC (Silicon Carbide) coated graphite, SiC, molybdenum, tungsten or niobium and other metal materials.

The susceptor cover 502 must have corrosion resistance to the reactive gas, such as materials including quartz, SiC, or pyrolytic graphite. The susceptor cover 502 covers the susceptor 501 to prevent the susceptor 501 from being exposed on the film formation side, thereby preventing formation of a compound semiconductor crystal on the upper surface of the susceptor 501. In the case where the substrate supporting device 500 includes the fixing member as in the third embodiment, the fixing member also contains the same material as the base cover 502.

In order to suppress heat conduction from the contact portion to the substrate 505, the spacer 503 preferably contains a material having a low thermal conductivity, for example, containing quartz.

As the substrate 505, a semiconductor substrate, a wafer, a glass substrate, a sapphire substrate, or the like is used. The shape of the substrate 505 may not be circular. The shape of the through hole 504 may not be circular, and may be appropriately set in accordance with the shape of the substrate 505.

The base cover 502 may be formed of one member and has one or a plurality of through holes 504, and may be formed of a plurality of members. Further, the base cover 502 may have a structure in which the through holes 504 are formed by combining a plurality of members.

The upper surface of the base 501 of the embodiment is a flat surface, but a convex portion or a concave portion for positioning when the base cover 502 is disposed may be formed on the upper surface of the base 501.

As described above, since the vapor phase growth apparatus of the present invention can support the substrate 505 under certain conditions and can suppress the difference in surface temperature of the substrate, the compound semiconductor crystal having stable quality can be crystallized on the substrate 505.

The substrate supporting device and the vapor phase growth device of the present invention are not limited to the above The embodiment can be variously modified within the scope of the claims, and the embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention.

Industrial availability

According to the present invention, it is generally possible to support a part of the substrate under a certain condition, and thus it is possible to suppress the occurrence of unevenness in the surface temperature of the substrate, and to crystallize the compound semiconductor having stable characteristics.

17‧‧‧Base cover

18‧‧‧ base cover

18a‧‧‧through hole

18b‧‧‧Support Department

19‧‧‧Substrate

63‧‧‧Base

65‧‧‧ spacers

100‧‧‧Substrate support device

101‧‧‧Base

102‧‧‧ base cover

103‧‧‧ spacers

103a‧‧‧ spacers

103b‧‧‧ spacers

104‧‧‧through holes

105‧‧‧Substrate

106‧‧‧ Positioning Department

106a‧‧‧ Positioning Department

106b‧‧‧ Positioning Department

200‧‧‧Substrate support device

201‧‧‧Base

202‧‧‧Base cover

203‧‧‧ spacers

204‧‧‧through holes

205‧‧‧Substrate

206‧‧‧ Positioning Department

300‧‧‧Substrate support device

301‧‧‧Base

302‧‧‧ base cover

303‧‧‧ spacers

304‧‧‧Fixed components

305‧‧‧through holes

306‧‧‧Substrate

307‧‧‧ Positioning Department

308‧‧‧ incision

400‧‧‧Substrate support device

401‧‧‧Base

402‧‧‧Base cover

403‧‧‧ spacers

403a‧‧‧ spacer

403b‧‧‧ spacer

404a~404h‧‧‧through hole

405‧‧‧ Positioning Department

405a‧‧‧ Positioning Department

405b‧‧‧ Positioning Department

500‧‧‧Substrate support device

501‧‧‧Base

502‧‧‧ base cover

503‧‧‧ spacers

504‧‧‧through holes

505‧‧‧Substrate

506‧‧‧ Positioning Department

510‧‧‧ gas phase growth device

511‧‧‧Reaction room

512‧‧‧ gas supply pipe

513‧‧‧ gas supply

514‧‧‧Tufted head

515‧‧‧ gas exhaust pipe

516‧‧‧Exhaust treatment unit

517‧‧‧Rotating device

518‧‧‧heater

Fig. 1 is a perspective view of a substrate supporting device according to a first embodiment of the present invention.

Figure 2 is a cross-sectional view of the substrate supporting device taken along line IO ₁ -I' of Figure 1.

Fig. 3A is a cross-sectional view showing a cross section of a peripheral portion of a positioning portion and a spacer in the base cover.

Fig. 3B is a bottom plan view showing a peripheral portion of the positioning portion in the base cover and a bottom surface (surface on the base side) of the spacer.

Fig. 4 is an explanatory view for explaining a state in which the base cover is warped.

Fig. 5 is an explanatory view for explaining another example of the spacer.

Figure 6 is a perspective view of a substrate supporting device of Embodiment 2 of the present invention.

Figure 7 is a cross-sectional view of the substrate supporting device as seen from the direction of the arrow II-II' of Figure 6.

Fig. 8 is an explanatory view for explaining a positioning portion of the same embodiment.

Figure 9 is a perspective view of a substrate supporting device of Embodiment 3 of the present invention.

Fig. 10 is an explanatory view for explaining a spacer and a fixing member of the same embodiment.

Figure 11 is a cross-sectional view of the substrate supporting device taken along line III-III' of Figure 9.

Figure 12 is a plan view showing a substrate supporting device of Embodiment 4 of the present invention.

Fig. 13 is an explanatory view for explaining the configuration of the vapor phase growth apparatus of the present invention.

FIG. 14A is an exploded perspective view of the substrate supporting device disclosed in Japanese Laid-Open Patent Publication No. 2006-173560 (Patent Document 1).

Fig. 14B is a perspective view for explaining the substrate supporting device disclosed in Patent Document 1.

Fig. 15 is a cross-sectional view taken along line IV-IV' of Fig. 14B for explaining an explanation of the problems of the prior art.

Fig. 16 is an explanatory view for explaining an improvement of the substrate supporting device.

Fig. 17 is a view for explaining the problem of the improvement of the substrate supporting device shown in Fig. 16.

100‧‧‧Substrate support device

101‧‧‧Base

102‧‧‧ base cover

103, 103a, 103b, 103c‧‧‧ spacers

104‧‧‧through holes

105‧‧‧Hosting substrate

O ₁ ‧‧‧ Center

Claims (13)

A substrate supporting device for supporting a substrate, comprising: a base (101, 201, 401); and a spacer (103, 203, 403) disposed on the base (101, 201, 401) and supported a portion of the substrate; and a base cover (102, 202, 402) disposed on the base (101, 201, 401) and the spacer (103, 203, 403) and including a through hole for receiving the substrate ( 104, 204, 404a to 404h); and the base cover (102, 202, 402) has the spacers (103, 203, 403) at specific positions of the through holes (104, 204, 404a to 404h) Positioning portion (106, 206, 405). The substrate supporting device of claim 1, wherein the positioning portion (106, 206, 405) covers a portion of the spacer (103, 203, 403) and restricts at least one of the spacers (103, 203, 403) The movement of the direction. The substrate supporting device of claim 2, wherein the base cover (102, 402) comprises a plurality of the positioning portions (106, 405). The substrate supporting device of claim 3, wherein the base cover (102, 402) has a plurality of the positioning portions (106) at a position inscribed at an apex of a regular polygon of the through holes (104, 404a to 404h). 405). The substrate supporting device of claim 4, wherein the base cover (402) includes a plurality of the through holes (404a to 404h); each of the plurality of through holes (404a to 404h) has a plurality of the above-mentioned concentric circles Positioning unit (405). The substrate supporting device of claim 2, wherein the spacer (203) comprises a hole for providing a gap between the substrate and the base (201). A substrate supporting device for supporting a substrate, comprising: a base (301); a plurality of spacers (303) disposed on the base (301) and supporting one of the substrates; and a base cover (302) And a fixing member (304) disposed on the base (301) and received in the through hole (305) And the fixing member (304) has a positioning portion (307) for positioning a plurality of the spacers (303) at a specific position. The substrate supporting device of claim 7, wherein the positioning portion (307) surrounds a portion of the spacer (303) and restricts movement of the spacer (303) in a horizontal direction. The substrate supporting device of claim 8, wherein the fixing member (304) has a plurality of the positioning portions (307) at a position inscribed at an apex of a regular polygon of a concentric circle of the through hole (305). The substrate supporting device of claim 9, wherein the fixing member (304) comprises a slit (308). The substrate supporting device of claim 10, wherein the base cover (302) positions the fixing member (304). The substrate supporting device of claim 11, wherein the base cover comprises a plurality of the through holes, and the plurality of the spacers are located on a concentric circumference In this manner, the fixing member housed in the plurality of through holes is positioned. A vapor phase growth apparatus comprising the substrate support apparatus according to any one of claims 1 to 12.