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JP2010028009A - Method for manufacturing metal-resin integrated flat circuit board, and metal-resin integrated flat circuit board - Google Patents

Method for manufacturing metal-resin integrated flat circuit board, and metal-resin integrated flat circuit board Download PDF

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JP2010028009A
JP2010028009A JP2008190644A JP2008190644A JP2010028009A JP 2010028009 A JP2010028009 A JP 2010028009A JP 2008190644 A JP2008190644 A JP 2008190644A JP 2008190644 A JP2008190644 A JP 2008190644A JP 2010028009 A JP2010028009 A JP 2010028009A
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lead frame
resin
metal
circuit board
flat circuit
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Kazuyuki Watanabe
一幸 渡辺
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KATO DENKI SEISAKUSHO KK
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KATO DENKI SEISAKUSHO KK
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a flat circuit board which is inexpensive, the product design of which can be easily changed and which has excellent heat conductivity. <P>SOLUTION: The method for manufacturing a metal-resin integrated flat circuit board includes: a process for manufacturing a lead frame 1 by forming removed portions r obtained by removing a part or all of a metal plate in a thickness direction on the metal plate with a predetermined pattern; and an insert molding process for clamping the lead frame 1 between a surface side metal mold 2 and a rear side metal mold 3 having flat insert contact surfaces 2c, 3c, respectively and in a state that the whole surface and the whole rear face of the lead frame 1 are brought into close contact with the insert contact surfaces 2c, 3c of the surface side metal mold and the rear side metal mold, directly filling the removed portions r with thermosetting resin 5 containing filler, and forming a circuit board 10 having the same thickness as the lead frame 1 and having flat surface and rear face. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、半導体チップ、表面実装部品等を搭載するための金属・樹脂一体型平坦回路基板の製造技術に関するものである。   The present invention relates to a technology for manufacturing a metal / resin integrated flat circuit board for mounting a semiconductor chip, a surface-mounted component, or the like.

従来、光電変換素子等の半導体チップや表面実装部品を搭載する平坦回路基板としては、積層形態や単層形態の別なく、ガラスエポキシに代表される樹脂基板が主に用いられている。これは、製品仕様上複雑な再配線が必要であることに起因している。また、高い信頼性が必要な用途にはセラミックに代表される無機材料基板が使用されることもある。
特開2007−294743号公報
Conventionally, as a flat circuit substrate on which a semiconductor chip such as a photoelectric conversion element or a surface-mounted component is mounted, a resin substrate typified by glass epoxy is mainly used regardless of a laminated form or a single layer form. This is due to the need for complex rewiring in product specifications. In addition, an inorganic material substrate typified by ceramic may be used for applications that require high reliability.
JP 2007-294743 A

しかしながら、ガラスエポキシに代表される樹脂基板は、構造が単層であっても製作工程が煩雑である為、コスト低減及び納期短縮は難しい。また、ガラスエポキシに代表される樹脂基板は、放熱性は基本的に使用される樹脂特性によるところが大きく、この特性を変えることは大変難しい。この改善を図る為には半導体チップ搭載パターンと基板底面等に配置したヒートシンクとを、ビアホールを介して連結させる必要があり、工程数、材料費も増加する為、更なるコスト高や工期延長に繋がる。
同じく、セラミックに代表される無機材料基板は樹脂基板に比べ、物理・機械・熱・電気的特性は非常に優れているが樹脂基板より更にコスト高となっている。
そこで、本発明の主たる課題は、上記従来品にかわる安価で製品設計変更が容易であり、しかも熱伝導性にすぐれた平坦回路基板を提供する事を目的とする。
However, a resin substrate typified by glass epoxy has a complicated manufacturing process even if the structure is a single layer, so it is difficult to reduce costs and shorten delivery times. Further, a resin substrate typified by glass epoxy largely depends on the resin characteristics used, and it is very difficult to change these characteristics. In order to achieve this improvement, it is necessary to connect the semiconductor chip mounting pattern and the heat sink placed on the bottom of the substrate via via holes, which increases the number of processes and material costs, further increasing costs and extending the construction period. Connected.
Similarly, an inorganic material substrate typified by ceramic is very superior in physical, mechanical, thermal, and electrical characteristics compared to a resin substrate, but is more expensive than a resin substrate.
Therefore, a main object of the present invention is to provide a flat circuit board which is inexpensive and can be easily changed in product design, and has excellent thermal conductivity.

上記課題を解決した本発明は次記のとおりである。
<請求項1記載の発明>
金属平板に、厚み方向の一部または全部を除去してなる除去部を所定のパターンで形成することにより、リードフレームを製造する工程と、
それぞれ平坦なインサート接触面を有する表面側金型及び裏面側金型の間に前記リードフレームをクランプし、前記リードフレームの表面全体及び裏面全体を前記表面側金型のインサート接触面及び裏面側金型のインサート接触面にそれぞれ当接させた状態で、フィラーを含有する熱硬化性樹脂を前記除去部に直接に充填することにより、金属リードフレームと同一の厚みを有する表面及び裏面が平坦な回路基板を形成する、インサート成形工程と、
を含むことを特徴とする、金属・樹脂一体型平坦回路基板の製造方法。
The present invention that has solved the above problems is as follows.
<Invention of Claim 1>
A step of manufacturing a lead frame by forming a removal portion formed by removing a part or all of the metal plate in the thickness direction with a predetermined pattern;
The lead frame is clamped between a front mold and a back mold each having a flat insert contact surface, and the entire front and back surfaces of the lead frame are inserted into the insert contact surface and the back mold of the front mold. A circuit with flat front and back surfaces having the same thickness as that of the metal lead frame, by directly filling the removal portion with a thermosetting resin containing a filler while being in contact with the insert contact surface of the mold. An insert molding process for forming a substrate;
A method for producing a metal / resin integrated flat circuit board, comprising:

(作用効果)
このような製造方法であれば、金属リードフレームは安価で設計・製作日数が短くて済み、また成形金型も特殊な構造では無く専用化する必要が無いため、安価で製品設計変更が容易となる。しかも、リードフレームの表面全体及び裏面全体を金型の平坦な接触面にそれぞれ当接させた状態で成形するため、リードフレーム表面における樹脂バリが抑制される。
なお、金属リードフレームと樹脂との組合せは、金属リードフレームに半導体チップを搭載・配線しそれらの保護として樹脂にてフルモールディングする形態や、近年では半導体チップを搭載・配線後、中空封止或いはポッティング封止する用途として、金属フレームに予め、樹脂成形にて箱型状のパッケージを形成する形態もあるが、いずれも本発明とは無関係のものであり、発想が全く異なるものである。
(Function and effect)
With such a manufacturing method, the metal lead frame is inexpensive and requires only a short design and production time, and the molding die is not a special structure and does not need to be dedicated. Become. In addition, since the entire front and back surfaces of the lead frame are molded in contact with the flat contact surfaces of the mold, resin burrs on the lead frame surface are suppressed.
In addition, the combination of the metal lead frame and the resin is a form in which a semiconductor chip is mounted / wired on the metal lead frame and fully molded with a resin as a protection for them, or in recent years after mounting / wiring the semiconductor chip, As an application for potting sealing, there is a form in which a box-shaped package is formed in advance on a metal frame by resin molding, but all are unrelated to the present invention and the idea is completely different.

<請求項2記載の発明>
前記インサート成形工程に先立って、前記製造したリードフレームに表面メッキ処理を施し、前記インサート成形工程後に前記リードフレームのメッキ処理を行わないようにする、請求項1記載の金属・樹脂一体型平坦回路基板の製造方法。
<Invention of Claim 2>
2. The metal / resin integrated flat circuit according to claim 1, wherein a surface plating process is performed on the manufactured lead frame prior to the insert molding process, and the lead frame is not plated after the insert molding process. A method for manufacturing a substrate.

(作用効果)
本発明では、リードフレームの表面全体及び裏面全体を金型の平坦な接触面にそれぞれ当接させた状態で成形することにより、樹脂充填時にリードフレーム表面に樹脂バリが発生しない。よって、本項記載の発明のように、処理が難しく費用の高い樹脂バリ除去後の後メッキを省略し、より低コストな金属リードフレーム製作段階での薄付け先メッキを行うことにより、製造コストを削減することができる。
(Function and effect)
In the present invention, resin burrs are not generated on the surface of the lead frame when the resin is filled by molding the entire front surface and back surface of the lead frame in contact with the flat contact surface of the mold. Therefore, as in the invention described in this section, the post-plating after removing the resin burrs which is difficult and costly is omitted, and the thinning plating is performed at the low-cost metal lead frame manufacturing stage, thereby reducing the manufacturing cost. Can be reduced.

<請求項3記載の発明>
前記リードフレームを製造するにあたり、前記リードフレームに、個々の製品となる単位部分を多数並設するとともに、隣接する単位部分の除去部間を繋ぐ第1の樹脂流動供給用除去部を形成するとともに、複数の単位部分の各除去部に共通的に連通する第2の樹脂流動供給用除去部を形成する、請求項1または2記載の金属・樹脂一体型平坦回路基板の製造方法。
<Invention of Claim 3>
In manufacturing the lead frame, the lead frame is provided with a large number of unit portions to be individual products, and a first resin flow supply removal portion that connects the removal portions of adjacent unit portions is formed. The method for producing a metal / resin-integrated flat circuit board according to claim 1, wherein a second resin flow supply removing portion that is in common communication with each removing portion of the plurality of unit portions is formed.

(作用効果)
このように、金型ではなく金属リードフレーム内に樹脂流動経路が形成されていると、樹脂中の無機フィラーの充填量を増加させても、リードフレーム全体にわたり最適な充填が可能となる。
(Function and effect)
As described above, when the resin flow path is formed in the metal lead frame instead of the mold, the entire lead frame can be optimally filled even when the filling amount of the inorganic filler in the resin is increased.

<請求項4記載の発明>
請求項1〜3のいずれか1項に記載の方法により製造されることを特徴とする、金属・樹脂一体型平坦回路基板。
<Invention of Claim 4>
A metal / resin integrated flat circuit board manufactured by the method according to claim 1.

(作用効果)
上述の各作用効果が奏せられる。
(Function and effect)
Each effect mentioned above is produced.

以上のように、本発明によれば安価で製品設計変更が容易であり熱伝導性にすぐれた平坦回路基板となる、等の利点がもたらされる。   As described above, according to the present invention, there are advantages such as a flat circuit board that is inexpensive, can be easily changed in product design, and has excellent thermal conductivity.

以下、本発明の一実施形態について添付図面を参照しながら詳説する。
本発明では、先ずリードフレームを製造する。リードフレームの材料となる金属平板としては、所定の寸法を有する矩形薄板を用いることができ、材質についてはCu(銅)ベース、Fe(鉄)ベース若しくはその他合金のいずれでもよく、製品要求特性に準拠したものを選定すればよい。このような金属平板に対して、パンチングやエッチング等により厚み方向の一部または全部を所定のパターンで除去し、図1に示すような、任意の電極を有する金属リードフレーム1を製造する。符号rが除去部である。このパターンは適宜定めることができるが、量産品の場合、図1に示すように個々の製品となる単位部分1Uが縦方向及び横方向にそれぞれ多数並設されるようなパターンが一般的である。
Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
In the present invention, a lead frame is first manufactured. As the metal flat plate used as the material of the lead frame, a rectangular thin plate having a predetermined size can be used, and the material may be any of Cu (copper) base, Fe (iron) base or other alloys, and the required product characteristics. You can select one that conforms to it. With respect to such a metal flat plate, a part or all of the thickness direction is removed in a predetermined pattern by punching, etching or the like, and a metal lead frame 1 having an arbitrary electrode as shown in FIG. 1 is manufactured. Symbol r is a removal unit. Although this pattern can be determined as appropriate, in the case of mass-produced products, a pattern in which a large number of unit portions 1U that become individual products are arranged in parallel in the vertical and horizontal directions as shown in FIG. 1 is common. .

このリードフレーム1の製造に際して、個々の製品となる単位部分1U内における除去部rとは別に、隣接する単位部分1Uの除去部r間を繋ぐ第1の樹脂流動供給用除去部r1を形成するとともに、複数の単位部分1Uの各除去部rに共通的に連通する第2の樹脂流動供給用除去部r2を形成しておくと、樹脂をリードフレーム1の隅々まで好適に充填できるため好ましい。通常の場合、リードフレーム1の中央部分に個々の製品となる単位部分1Uが隣接配置されるため、第2の樹脂流動供給用除去部r2は、個々の製品となる単位部分1Uの群の周囲に隣接して設けるのが好ましい。   When the lead frame 1 is manufactured, a first resin flow supply removal portion r1 that connects between the removal portions r of the adjacent unit portions 1U is formed separately from the removal portions r in the unit portions 1U that are individual products. In addition, it is preferable to form the second resin flow supply removal portion r2 that is in common communication with each removal portion r of the plurality of unit portions 1U, because the resin can be suitably filled to every corner of the lead frame 1. . In a normal case, since the unit portion 1U that becomes an individual product is arranged adjacent to the center portion of the lead frame 1, the second resin flow supply removal portion r2 is arranged around the group of unit portions 1U that become individual products. It is preferable to provide it adjacent to.

製造される金属リードフレーム1は、矩形薄板状をなしているのが望ましく、その長さ及び幅が樹脂成形金型及び以降のこの基板を使って組立等を行う設備の最大値であるのが望ましい。また金属リードフレーム1の厚みは、除去部rにおける樹脂流動を考慮し、200μm以上、特に200〜500μm程度とするのが望ましい。   The metal lead frame 1 to be manufactured is preferably in the shape of a rectangular thin plate, and its length and width are the maximum values of the resin molding die and the equipment for assembly using this substrate thereafter. desirable. The thickness of the metal lead frame 1 is preferably 200 μm or more, particularly about 200 to 500 μm in consideration of the resin flow in the removal portion r.

次に、製造した金属リードフレーム1は、インサートとして金型内に配置され、成形工程が行われる。この際、図2に示すように、それぞれ平坦なインサート接触面2c,3cを有する表面側金型2及び裏面側金型3の間にリードフレーム1をクランプし、リードフレーム1の表面全体及び裏面全体を表面側金型2のインサート接触面2c及び裏面側金型3のインサート接触面3cにそれぞれ密着させた状態で、フィラーを含有する熱硬化性樹脂5を金型内のランナーから直接にリードフレーム1の空隙(除去部r)に充填する。この際、供給された熱硬化性樹脂5は、第1の樹脂流動供給用除去部r1を介して隣接する単位部分1Uから単位部分1Uへ流動供給され、また第2の樹脂流動供給用除去部r2を介して隣接する複数の単位部分1Uの各除去部rに分配供給される。これにより、図3及び図4に示すように、金属リードフレーム1と同一の厚みを有する表面及び裏面が平坦な回路基板10が形成される。このような製造方法であれば、金属リードフレーム1は安価で設計・製作日数が短くて済み、また成形金型2,3も特殊な構造では無く専用化する必要が無いため、安価で製品設計変更が容易となる。しかも、リードフレーム1の表面全体及び裏面全体を金型の平坦な接触面にそれぞれ当接させた状態で成形するため、リードフレーム1表面における樹脂バリが抑制される。   Next, the manufactured metal lead frame 1 is placed in a mold as an insert, and a molding process is performed. At this time, as shown in FIG. 2, the lead frame 1 is clamped between the front surface side mold 2 and the back surface side mold 3 having flat insert contact surfaces 2 c and 3 c, respectively. The thermosetting resin 5 containing the filler is directly lead from the runner in the mold in a state where the whole is in close contact with the insert contact surface 2c of the front surface side mold 2 and the insert contact surface 3c of the back surface side mold 3. The gap (removal part r) of the frame 1 is filled. At this time, the supplied thermosetting resin 5 is fluidly supplied from the adjacent unit portion 1U to the unit portion 1U via the first resin flow supply removal portion r1, and the second resin fluid supply removal portion. It is distributed and supplied to each removal unit r of a plurality of adjacent unit portions 1U via r2. As a result, as shown in FIGS. 3 and 4, a circuit board 10 having the same thickness as the metal lead frame 1 and a flat front and back surfaces is formed. With such a manufacturing method, the metal lead frame 1 is inexpensive and requires only a short design and production time, and the molding dies 2 and 3 are not special structures and do not need to be dedicated. Easy to change. In addition, since the entire surface and back surface of the lead frame 1 are molded in contact with the flat contact surface of the mold, resin burrs on the surface of the lead frame 1 are suppressed.

成形に用いる熱硬化性樹脂5としては、架橋型樹脂のいずれも用いることができるがコストや入手容易性、耐熱性能等を総合的に考慮すると、ビフェニール型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂が好適である。熱硬化性樹脂5には無機フィラーが添加分散される。無機フィラーとしては水酸化アルミニウム、炭酸カルシウム、アルミナ粉末、シリカ粉末、ボロンナイトライト粉末、酸化チタン粉末、炭化ケイ素粉末、ガラス繊維、アルミナ繊維などを用いることができる。無機フィラーの配合量は熱硬化性樹脂成分に対して60〜80重量%とするのが好ましい。無機フィラーの配合量が60重量%よりも少なくなると、熱伝導率向上効果に乏しくなり、また80重量%よりも多くなると樹脂充填性が低下する。無機フィラーの粒径は20μm以下であるのが好ましい。   As the thermosetting resin 5 used for molding, any of cross-linked resins can be used. However, in consideration of cost, availability, heat resistance, etc., biphenyl epoxy resin, cresol novolac epoxy resin, A cyclopentadiene type epoxy resin is preferred. An inorganic filler is added and dispersed in the thermosetting resin 5. As the inorganic filler, aluminum hydroxide, calcium carbonate, alumina powder, silica powder, boron nitrite powder, titanium oxide powder, silicon carbide powder, glass fiber, alumina fiber, or the like can be used. It is preferable that the compounding quantity of an inorganic filler shall be 60 to 80 weight% with respect to a thermosetting resin component. When the blending amount of the inorganic filler is less than 60% by weight, the effect of improving the thermal conductivity is poor, and when it exceeds 80% by weight, the resin filling property is lowered. The particle size of the inorganic filler is preferably 20 μm or less.

リードフレーム1に対するメッキ処理は成形工程後に行うこともできるが高価である。本発明ではリードフレーム1を隠蔽するような樹脂バリが実質的に発生しないため、成形工程に先立って、製造したリードフレーム1に表面メッキ処理を施し、インサート成形工程後にリードフレーム1のメッキ処理を行わないようにするのが好ましい。このメッキ処理は特に限定されるものではなく、Ni-Pd-Au,Ni-Au等の一般的で安価な薄付け全面メッキを用いることができる。   The plating process for the lead frame 1 can be performed after the molding process, but is expensive. In the present invention, since a resin burr that conceals the lead frame 1 does not substantially occur, the manufactured lead frame 1 is subjected to a surface plating process prior to the molding process, and the lead frame 1 is plated after the insert molding process. It is preferable not to do so. This plating process is not particularly limited, and general and inexpensive thin-film overall plating such as Ni—Pd—Au and Ni—Au can be used.

他方、図5及び図6は、本発明の製造方法により製造した基板10の利用例を示しており、基板10のダイパッド(リードフレーム1により形成される部分である)上に、光電変換素子11を搭載し、リードフレーム1からなる電極と光電変換素子11とをボンディングワイヤー13により接続した後、これらを透明樹脂12で封止した光検出チップ20を示している。本発明の金属・樹脂一体型平坦回路基板10はこのような応用が可能である。   On the other hand, FIG.5 and FIG.6 has shown the utilization example of the board | substrate 10 manufactured with the manufacturing method of this invention, and it is the photoelectric conversion element 11 on the die pad (it is a part formed with the lead frame 1) of the board | substrate 10. FIG. The photodetection chip 20 is shown in which the electrode composed of the lead frame 1 and the photoelectric conversion element 11 are connected by the bonding wire 13 and then sealed with the transparent resin 12. The metal / resin integrated flat circuit board 10 of the present invention can be applied in this manner.

本発明は、半導体チップや表面実装部品を実装する単層構造の回路基板として有用なものである。   The present invention is useful as a circuit board having a single layer structure for mounting a semiconductor chip or a surface mount component.

成形前におけるリードフレームのサンプルの写真である。It is the photograph of the sample of a lead frame before shaping | molding. 成形時における図1のii-ii断面図である。It is ii-ii sectional drawing of FIG. 1 at the time of shaping | molding. 成形後におけるリードフレームのサンプルの写真である。It is a photograph of a sample of a lead frame after molding. 図3のiv-iv断面図である。FIG. 4 is a sectional view taken along line iv-iv in FIG. 3. 光検出チップの斜視図である。It is a perspective view of a photon detection chip. 光検出チップの断面図である。It is sectional drawing of a photon detection chip.

符号の説明Explanation of symbols

1…リードフレーム、2…表面側金型、3…裏面側金型、2c,3c…インサート接触面、5…熱硬化性樹脂、r,r1,r2…除去部、10…回路基板、11…光電変換素子、12…透明樹脂、13…ボンディングワイヤー、20…光検出チップ。   DESCRIPTION OF SYMBOLS 1 ... Lead frame, 2 ... Front surface side metal mold, 3 ... Back surface side metal mold, 2c, 3c ... Insert contact surface, 5 ... Thermosetting resin, r, r1, r2 ... Removal part, 10 ... Circuit board, 11 ... Photoelectric conversion element, 12 ... transparent resin, 13 ... bonding wire, 20 ... light detection chip.

Claims (4)

金属平板に、厚み方向の一部または全部を除去してなる除去部を所定のパターンで形成することにより、リードフレームを製造する工程と、
それぞれ平坦なインサート接触面を有する表面側金型及び裏面側金型の間に前記リードフレームをクランプし、前記リードフレームの表面全体及び裏面全体を前記表面側金型のインサート接触面及び裏面側金型のインサート接触面にそれぞれ当接させた状態で、フィラーを含有する熱硬化性樹脂を前記除去部に直接に充填することにより、金属リードフレームと同一の厚みを有する表面及び裏面が平坦な回路基板を形成する、インサート成形工程と、
を含むことを特徴とする、金属・樹脂一体型平坦回路基板の製造方法。
A step of manufacturing a lead frame by forming a removal portion formed by removing a part or all of the metal plate in the thickness direction with a predetermined pattern;
The lead frame is clamped between a front mold and a back mold each having a flat insert contact surface, and the entire front and back surfaces of the lead frame are inserted into the insert contact surface and the back mold of the front mold. A circuit with flat front and back surfaces having the same thickness as that of the metal lead frame, by directly filling the removal portion with a thermosetting resin containing a filler while being in contact with the insert contact surface of the mold. An insert molding process for forming a substrate;
A method for producing a metal / resin integrated flat circuit board, comprising:
前記インサート成形工程に先立って、前記製造したリードフレームに表面メッキ処理を施し、前記インサート成形工程後に前記リードフレームのメッキ処理を行わないようにする、請求項1記載の金属・樹脂一体型平坦回路基板の製造方法。   2. The metal / resin integrated flat circuit according to claim 1, wherein a surface plating process is performed on the manufactured lead frame prior to the insert molding process, and the lead frame is not plated after the insert molding process. A method for manufacturing a substrate. 前記リードフレームを製造するにあたり、前記リードフレームに、個々の製品となる単位部分を多数並設するとともに、隣接する単位部分の除去部間を繋ぐ第1の樹脂流動供給用除去部を形成するとともに、複数の単位部分の各除去部に共通的に連通する第2の樹脂流動供給用除去部を形成する、請求項1または2記載の金属・樹脂一体型平坦回路基板の製造方法。   In manufacturing the lead frame, the lead frame is provided with a large number of unit portions to be individual products, and a first resin flow supply removal portion that connects the removal portions of adjacent unit portions is formed. The method for producing a metal / resin-integrated flat circuit board according to claim 1, wherein a second resin flow supply removing portion that is in common communication with each removing portion of the plurality of unit portions is formed. 請求項1〜3のいずれか1項に記載の方法により製造されることを特徴とする、金属・樹脂一体型平坦回路基板。   A metal / resin integrated flat circuit board manufactured by the method according to claim 1.
JP2008190644A 2008-07-24 2008-07-24 Method for manufacturing metal-resin integrated flat circuit board, and metal-resin integrated flat circuit board Pending JP2010028009A (en)

Priority Applications (1)

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JP2008190644A JP2010028009A (en) 2008-07-24 2008-07-24 Method for manufacturing metal-resin integrated flat circuit board, and metal-resin integrated flat circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008190644A JP2010028009A (en) 2008-07-24 2008-07-24 Method for manufacturing metal-resin integrated flat circuit board, and metal-resin integrated flat circuit board

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JP2010028009A true JP2010028009A (en) 2010-02-04

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099540A (en) * 2010-10-29 2012-05-24 Shinko Electric Ind Co Ltd Wiring board and method of manufacturing the same, and electronic device
WO2014033768A1 (en) * 2012-08-27 2014-03-06 パイオニア株式会社 Semiconductor device and semiconductor device producing method
JP2014192323A (en) * 2013-03-27 2014-10-06 Furukawa Electric Co Ltd:The Substrate and method of manufacturing substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099540A (en) * 2010-10-29 2012-05-24 Shinko Electric Ind Co Ltd Wiring board and method of manufacturing the same, and electronic device
WO2014033768A1 (en) * 2012-08-27 2014-03-06 パイオニア株式会社 Semiconductor device and semiconductor device producing method
JP2014192323A (en) * 2013-03-27 2014-10-06 Furukawa Electric Co Ltd:The Substrate and method of manufacturing substrate

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