JP2010016034A - Chemical mechanical polishing pad, and chemical mechanical polishing method - Google Patents

Abstract

【Task】
The present invention is a chemical mechanical polishing pad having a high polishing rate, excellent flatness of the surface to be polished (in-plane uniformity of the polishing amount on the surface to be polished), and having few scratches, and chemical mechanical polishing using the polishing pad Provide a method.
[Solution]
The chemical mechanical polishing pad of the present invention comprises (A) component: 100 parts by mass of an ethylene- (meth) acrylic acid copolymer, (B) component: epoxy resin, (C) component; 5 water-soluble particles. And 120 parts by mass, and the polishing layer has an epoxy group content of 0.1 to 1.0 mol of the repeating unit derived from (meth) acrylic acid as the component (A). It is produced by blending the component (B) corresponding to 1.0 mol.
[Selection figure] None

Description

  The present invention relates to a chemical mechanical polishing pad and a chemical mechanical polishing method.

In the manufacture of semiconductor devices and the like in recent years, a chemical mechanical polishing method (generally abbreviated as “CMP”) is widely used as a polishing method capable of forming a surface having excellent flatness. Yes. In this chemical mechanical polishing method, it is known that the polishing result varies greatly depending on the material of the chemical mechanical polishing pad, and chemical mechanical polishing pads having various compositions have been proposed.
For example, JP-A-2002-134445 discloses a polishing pad made of a composition having a crosslinked elastomer and a polymer having a carboxyl group. Further, for example, JP 2004-343099 A discloses a polishing pad made of a polymer having a crosslinked diene elastomer and an acid anhydride structure. Furthermore, for example, Japanese Patent Application Laid-Open No. 2002-137160 discloses a polishing pad containing a hydrophilic and substantially water-insoluble filler. In addition, for example, JP-A-2001-239453 discloses a polishing pad containing a polymer polymerized from polyurethane and a vinyl compound.
However, with these polishing pads, it is difficult to achieve a uniform composition, and there are cases where it is impossible to ensure both the polishing rate and the flattening performance.
JP 2002-134445 A JP 2004-343099 A JP 2002-137160 A JP 2001-239453 A

  The present invention is a chemical mechanical polishing pad having a high polishing rate, excellent flatness of the surface to be polished (in-plane uniformity of the polishing amount on the surface to be polished), and having few scratches, and chemical mechanical polishing using the polishing pad Provide a method.

The chemical mechanical polishing pad according to one embodiment of the present invention is as follows.
Component (A): 100 parts by mass of an ethylene- (meth) acrylic acid copolymer,
(B) component; an epoxy resin;
(C) component; 5-120 mass parts of water-soluble particles,
The polishing layer has an epoxy group content corresponding to 0.1 to 1.0 mol with respect to 1.0 mol of the repeating unit derived from (meth) acrylic acid as the component (A). It is manufactured by blending the component (B).
The chemical mechanical polishing pad according to one embodiment of the present invention is as follows.
Component (A): 100 parts by mass of an ethylene- (meth) acrylic acid copolymer,
(B) component; 2-40 mass parts of epoxy resins,
(C) component; 5-120 mass parts of water-soluble particles,
A polishing layer comprising
In the chemical mechanical polishing pad, an average particle size of the component (C) may be 5 to 80 μm.
In the chemical mechanical polishing pad, the component (A) may be a copolymer with at least one selected from the group consisting of acrylic acid, methacrylic acid, methyl acrylate, and ethyl acrylate.
In the chemical mechanical polishing pad, the component (A) may be crosslinked with the component (D): an organic peroxide.
A chemical mechanical polishing method according to another embodiment of the present invention includes:
A step of chemically and mechanically polishing an object to be polished using the chemical mechanical polishing pad;

  According to the chemical mechanical polishing pad and the chemical mechanical polishing method, in chemical mechanical polishing, it is possible to obtain a polished surface having a high polishing rate, excellent in-plane uniformity of the polishing amount, and few scratches.

  Hereinafter, a chemical mechanical polishing pad and a chemical mechanical polishing method according to an embodiment of the present invention will be specifically described.

1. Chemical mechanical polishing pad 1.1. Structure FIG. 1 is a cross-sectional view schematically showing an example of a chemical mechanical polishing pad according to an embodiment of the present invention. During chemical mechanical polishing, the surface (polishing surface) 10a of the polishing layer 10 of the chemical mechanical polishing pad 100 shown in FIG. 1 is in contact with an object to be polished (not shown).
The chemical mechanical polishing pad according to the present embodiment includes (A) component; 100 parts by mass of an ethylene- (meth) acrylic acid copolymer, (B) component; epoxy resin, and (C) component; water-soluble particles. The polishing layer has an epoxy group content of 0.1 mol per 1.0 mol of the repeating unit derived from the (meth) acrylic acid of the component (A). It is produced by blending the component (B) corresponding to ˜1.0 mol.
In addition, the chemical mechanical polishing pad according to the present embodiment includes (A) component: 100 parts by mass of ethylene- (meth) acrylic acid copolymer, (B) component: 2-40 parts by mass of epoxy resin, Component (C): A polishing layer containing 5 to 120 parts by mass of water-soluble particles.
Although the shape of the chemical mechanical polishing pad 100 is not limited, it can be, for example, a cylindrical shape, a polygonal column shape, etc., and is preferably a cylindrical shape.
When the chemical mechanical polishing pad 100 is, for example, cylindrical, the diameter of the polishing surface (one bottom surface of the cylinder) is preferably 150 to 1,200 mm, and more preferably 500 to 820 mm. Moreover, the thickness of the chemical mechanical polishing pad 100 is, for example, preferably 0.5 to 5.0 mm, more preferably 1.0 to 3.0 mm, and 1.5 to 3.0 mm. Is more preferable.
Further, the chemical mechanical polishing pad 100 can have an appropriate recess on the polishing surface 10a or the back surface (non-polishing surface) 10b of the polishing surface 10. Examples of the shape of the recess include concentric grooves, radial grooves, circular recesses, polygonal recesses, and combinations thereof.

2 and 3 are cross-sectional views schematically showing another example of the chemical mechanical polishing pad according to one embodiment of the present invention. In the chemical mechanical polishing pad 200 shown in FIG. 2, the recess 12 is provided on the polishing surface 10a, and in the chemical mechanical polishing pad 300 shown in FIG. 3, the recess 14 is provided on the back surface (surface to be polished) 10b of the polishing surface 10a. It has been.
FIG. 4 is a cross-sectional view schematically showing another example of a chemical mechanical polishing pad according to an embodiment of the present invention. A chemical mechanical polishing pad 400 shown in FIG. 4 is a multilayer pad provided with a support layer 16 on the non-polishing surface 10 b of the polishing layer 10.
The support layer 16 supports the polishing layer 10 on the back side of the polishing surface 10a. The support layer 16 preferably has a lower hardness than the polishing layer 10. Since the chemical mechanical polishing pad 400 includes the support layer 16 having a hardness lower than that of the polishing layer 10, the pad 400 can be prevented from being lifted and the surface 10a of the polishing layer 10 from being curved during chemical mechanical polishing. Mechanical polishing can be performed stably. The hardness of the support layer 16 is preferably 90% or less of the Durro D hardness of the polishing layer 10, more preferably 50 to 90%, further preferably 50 to 80%, and particularly preferably 50 to 70%.

1.2. Composition 1.2.1. (A) component; ethylene- (meth) acrylic acid copolymer (A) By including the component (A) in the polishing layer, it becomes possible to melt and knead in the production of the polishing layer, thus simplifying the manufacturing process. In addition, it is possible to obtain a polishing pad that exhibits moderate hardness and elastic modulus near normal temperature and has good polishing characteristics.
The ethylene- (meth) acrylic acid copolymer as the component (A) is a copolymer having a carboxyl group in the molecule. The component (A) is at least one selected from the group consisting of an ethylene-acrylic acid copolymer, an ethylene-methacrylic acid polymer, an ethylene-methyl acrylate copolymer, and an ethylene-ethyl acrylate copolymer. It is preferable that
For example, a copolymer of a (meth) acrylic monomer having a carboxyl group such as acrylic acid and methacrylic acid and ethylene, a copolymer of an acid anhydride monomer such as maleic anhydride and ethylene, and the like can be mentioned. . In the component (A), when the total number of moles of the repeating unit is 100 mol%, the content of the repeating unit derived from (meth) acrylic acid is preferably 1.0 to 10 mol%. More preferably, it is 1.7-7.6 mol%. If the content of the repeating unit derived from (meth) acrylic acid is less than 1.0 mol%, the hydrophilicity may be lowered and the retention of the slurry may not be effective. The strength is extremely reduced.
Moreover, it is preferable that the content rate of the repeating component derived from (meth) acrylic acid in (A) component is 3-25 mass%, It is more preferable that it is 5-20 mass%, It is 10-18 mass%. More preferably. In this case, when the (meth) acrylic acid content is less than 3% by mass, the slurry retention effect may be insufficient, while the (meth) acrylic acid content is 25% by mass. If it exceeds, the mechanical strength of the resulting chemical mechanical polishing pad tends to be too low.
As the component (A), for example, commercially available products include “Nucrel” (trade name) manufactured by Mitsui DuPont Polychemical Co., Ltd. and “REXPEARL” (trade name) manufactured by Nippon Polyethylene.

1.2.2. Component (B): Epoxy Resin Examples of the epoxy resin (B) include bifunctional epoxy resins and polyfunctional epoxy resins. Of these, polyfunctional epoxy resins are preferable, and tetraphenolethane type epoxy resins and glycidylamine type epoxy resins are more preferable. These can be used alone or in admixture of two or more. The epoxy resin as the component (B) can impart an appropriate strength to the polishing layer by crosslinking the ethylene- (meth) acrylic acid copolymer as the component (A).
The blending amount of the component (B) is such that the epoxy group content of the component (B) is 0.1 to 1 with respect to 1.0 mol of the repeating unit derived from the (meth) acrylic acid contained in the component (A). It is preferable to add an amount corresponding to 0.0 mol. When the epoxy group content of the component (B) is 0.1 mol or less with respect to 1.0 mol of the repeating unit derived from the (meth) acrylic acid contained in the component (A), the polishing layer is imparted with an appropriate strength. It is not preferable because it cannot be done. On the other hand, when the epoxy group content of the component (B) exceeds 1.0 epoxy equivalent, unreacted epoxy resin remains in the polishing layer and the polishing layer becomes brittle.

1.2.3. Component (C): Water-soluble particles The water-soluble particles as component (C) are separated from the polishing surface of the polishing pad by contacting with the chemical mechanical polishing aqueous dispersion supplied during chemical mechanical polishing. It has a function of forming pores that can hold the mechanical polishing aqueous dispersion. In the present invention, the “water-soluble particles” include not only a mode of dissolving in water upon detachment from the polishing surface, but also a mode of swelling or forming a sol upon contact with water.
Component (C) may be either an organic water-soluble substance or an inorganic water-soluble substance.
Examples of organic water-soluble substances include saccharides (polysaccharides such as starch, dextrin and cyclodextrin, lactose, mannitol, etc.), celluloses (hydroxypropylcellulose, methylcellulose, etc.), proteins, polyvinyl alcohol, polyvinylpyrrolidone, polyacrylic. Examples include acid, polyethylene oxide, water-soluble photosensitive resin, sulfonated polyisoprene, and sulfonated isoprene copolymer.
Examples of the inorganic water-soluble substance include potassium acetate, potassium nitrate, potassium carbonate, potassium hydrogen carbonate, potassium bromide, potassium phosphate, potassium sulfate, magnesium sulfate, and calcium nitrate.
As the component (C), one of the above may be used, or two or more may be mixed and used.
The component (C) is preferably solid from the viewpoint that the hardness of the polishing surface of the chemical mechanical polishing pad can be set to an appropriate value.
Moreover, the average particle diameter of (C) component becomes like this. Preferably it is 0.1-500 micrometers, More preferably, it is 0.5-100 micrometers. When the average particle diameter of the component (C) is 0.1 to 500 μm, a chemical mechanical polishing pad that exhibits a high polishing rate and is excellent in mechanical strength can be obtained.
It is preferable that the component (C) dissolves or swells in water or the like only when exposed to the surface layer in the polishing layer of the chemical mechanical polishing pad, absorbs moisture inside the polishing layer, and does not swell. For this reason, (C) component may be provided with the outer shell which suppresses moisture absorption in at least one part of the outermost part. This outer shell may be (C) physically adsorbed on the water-soluble particles, (C) chemically bonded to the water-soluble particles, or may be in contact with (C) the water-soluble particles by both. Good. Examples of the material for forming such an outer shell include epoxy resin, polyimide, polyamide, polysilicate, silane coupling agent, and the like. In this case, (C) the water-soluble particles may be composed of a water-soluble substance having an outer shell and a water-soluble substance not having an outer shell. Even if the shell is not covered, the above effect can be sufficiently obtained.
The use ratio of the component (C) in the polishing layer is preferably 5 to 120 parts by mass, more preferably 10 to 100 parts by mass with respect to 100 parts by mass of the component (A), and 20 to 80 parts by mass. More preferably, it is a part.
A chemical mechanical polishing pad having a high polishing rate and an appropriate hardness and mechanical strength by setting the content of component (C) to 5 to 120 parts by mass with respect to 100 parts by mass of component (A). It can be.

1.2.4. (D) Component: Organic Peroxide In the polishing layer of the chemical mechanical polishing pad according to the present embodiment, the component (A) is preferably crosslinked with the component (D): organic peroxide.
When the polishing layer of the chemical mechanical polishing pad according to this embodiment contains the component (D), the component (D) functions as a cross-linking agent, and the ethylene- (meth) acrylic acid-based copolymer (A) component. The crosslinked structure of the coalescence can be formed stably. Thereby, mechanical strength can be raised.
As the component (D), for example, 1,1-di-t-butylperoxy-3,3,5-trimethylcyclohexane, di-t-butyl peroxide, dicumyl peroxide, t-butylcumyl peroxide, 2,5 -Di-methyl-2,5-di (t-butylperoxy) hexane, 2,5-di-methyl-2,5-di (t-butylperoxy) hexyne, 1,3-bis (t-butylperoxy- And isopropyl) benzene. Of these, dicumyl peroxide, 2,5-di-methyl-2,5-di (t-butylperoxy) hexane, 2,5-di-methyl-2,5-di (t-butylperoxy) hexyne More preferred. These can be used alone or in admixture of two or more.
(D) As for the usage-amount of a component, 0.5-15 mass parts is preferable with respect to 100 mass parts of (A) component, and 1-10 mass parts is more preferable. By using 0.5 to 15 parts by mass of component (D) relative to 100 parts by mass of component (A), a chemical mechanical polishing pad is obtained in which the generation of scratches is suppressed and the polishing rate is high in the chemical mechanical polishing step. be able to.
Moreover, (D) component can be used in combination with the at least 1 sort (s) of compound selected from a sulfur compound, a polyfunctional monomer, and an oxime compound. In this case, the amount of the at least one compound selected from the sulfur compound, the polyfunctional monomer, and the oxime compound is preferably 15 parts by mass or less with respect to 100 parts by mass of the component (A), and 0.3 to 8 More preferably, it is part by mass.

1.2.5. Other Components The chemical mechanical polishing pad according to the present embodiment may further contain other components as long as the characteristics of the present invention are not impaired. Examples of such other components include softeners, plasticizers, lubricants, and the like.
Examples of the softening agent include process oil such as aromatic oil, naphthenic oil, and paraffin oil, vegetable oil such as palm oil, and synthetic oil such as alkylbenzene oil. Of these, process oil is preferred. The above softeners can be used alone or in admixture of two or more.
Examples of the plasticizer include phthalate, adipate, sebacate, polyether, and polyester.
Examples of the lubricant include paraffin and hydrocarbon resin, fatty acid amide, fatty acid ester, fatty alcohol, and the like.

1.2.5. Method for Preparing Composition for Forming Polishing Layer A method for preparing a composition (a composition for forming a polishing layer) for forming a polishing layer of the chemical mechanical polishing pad according to the present embodiment is not particularly limited. For example, each of the above components constituting the polishing layer of the chemical mechanical polishing pad according to this embodiment can be obtained by kneading by a known method using a kneader or the like. As the kneader, a known one can be used. Examples thereof include kneaders such as rolls, kneaders, Banbury mixers, and extruders (single screw and multi screw). The temperature at the time of kneading should be appropriately set depending on the type of components used, but is preferably 100 to 120 ° C., for example.

1.2.6. Formation method of polishing layer The polishing layer of the chemical mechanical polishing pad according to the present embodiment can be produced from the composition for forming a polishing layer containing the components (A) to (C).
A method of forming the composition into a desired shape under an appropriate pressure while heating the composition to about 150 to 190 ° C, or a desired shape after forming the composition into a sheet shape while heating to about 150 to 190 ° C. By cutting, a polishing layer in which water-soluble particles as component (C) are dispersed in a water-insoluble matrix containing components (A) and (B) can be obtained.
The polishing layer of the chemical mechanical polishing pad according to this embodiment preferably has a crosslinked structure. Since the water-insoluble matrix containing the component (A) and the component (B) has an appropriate elastic recovery force because the polishing layer of the polishing pad has a crosslinked structure, displacement due to shear stress generated in the chemical mechanical polishing pad during polishing In addition, the (A) component is excessively stretched during polishing and dressing, and plastic deformation is effectively suppressed, and pores are buried and the surface of the polishing layer is effectively prevented from becoming fuzzy. can do. That is, in the polishing layer, the (A) component is cross-linked by the (D) component, so that pores can be efficiently formed even during dressing, and it is possible to prevent a decrease in the retention of the slurry during polishing, and the fluffing can be prevented. Less and excellent polishing flatness can be realized.
In addition, the formation method of a crosslinked structure is not specifically limited. For example, in the chemical mechanical polishing pad according to this embodiment, when the polishing layer does not contain (D) an organic oxide, a crosslinked structure may be formed by radiation crosslinking by electron beam irradiation, or crosslinking may be performed by heating. May be.

2. Chemical mechanical polishing method A chemical mechanical polishing method according to an embodiment of the present invention includes a step of chemically mechanically polishing an object to be polished using the chemical mechanical polishing pad.
The chemical mechanical polishing method according to the present embodiment can be used for polishing an insulating film or a protective film, for example, in manufacturing a semiconductor device or the like.
In the chemical mechanical polishing method according to the present embodiment, an object to be polished is not particularly limited. For example, the object to be polished preferably contains silicon oxide. As an object to be polished containing silicon oxide, for example, an insulating film containing silicon oxide having an STI structure can be given.
According to the chemical mechanical polishing method according to the present embodiment, it is possible to obtain a surface to be polished that has a high polishing rate, is excellent in in-plane uniformity of the polishing amount, and has few scratches.

3. EXAMPLES Hereinafter, the present invention will be described in detail with reference to examples.

3.1. Example 1
3.1.1. Preparation of Composition for Forming Polishing Layer In a twin screw extruder adjusted to 150 ° C., (N) component Nucrel N1560 (trade name, manufactured by Mitsui DuPont Chemical Co., Ltd., ethylene-methacrylic acid copolymer) 100 parts by mass, as component (C), Dexy Pearl 100 (trade name, manufactured by Pearl Ace Co., Ltd., β-cyclodextrin, average particle diameter) corresponding to 5 parts by mass with respect to 100 parts by mass of component (A) 15 μm) was charged into a twin screw extruder using a weight type feeder and kneaded.
Next, the above kneaded composition and 1031S (trade name, manufactured by Japan Epoxy Resin Co., Ltd., tetraphenolethane type epoxy resin) 17 were added to the above-mentioned kneaded composition and the component (B) in a twin screw extruder adjusted to 120 ° C. As a part by mass, (D) component, Park Mill D-40 (trade name, manufactured by NOF Corporation) 7.0 parts by mass and TAIC-M60 (trade name, manufactured by Nippon Kasei Co., Ltd.) 4.0 Mass parts were added and kneaded to obtain a composition for forming a polishing layer of Example 1.

3.1.2. Production of Chemical Mechanical Polishing Pad The polishing layer forming composition of Example 1 was set in a pad molding die and heated at 175 ° C. for 12 minutes to obtain a molded body having a diameter of 60 cm and a thickness of 2.8 mm. Next, a concentric groove having a groove width of 0.5 mm, a groove depth of 1.4 mm, and a pitch of 4.0 mm is formed on the surface to be a polished surface of the molded body using a cutting machine manufactured by Kato Machine Co., Ltd. To obtain a chemical mechanical polishing pad of Example 1 comprising a polishing layer.

3.1.3. Evaluation of polishing performance The chemical mechanical polishing pad of Example 1 was attached to a chemical mechanical polishing apparatus (manufactured by Ebara Manufacturing Co., Ltd., type “EPO112”), and a PETEOS film (tetraethylorthosilicate as a raw material on the surface) was used as an acceleration condition. 300 wafers having a diameter of 8 inches on which a silicon oxide film (PETEOS film) formed by chemical vapor deposition using plasma is prepared and used as an object to be polished are subjected to chemical mechanical polishing under the following conditions. Was performed continuously.
Chemical mechanical polishing aqueous dispersion: SS-25 (manufactured by Cabot Microelectronics) diluted twice with ion-exchanged water Aqueous dispersion supply speed: 150 mL / min Head pressing pressure: 250 hPa
Plate rotation speed: 70rpm
Head rotation speed: 70rpm
Polishing time: 60 seconds / sheet

3.1-1. Evaluation of Polishing Rate For the wafer with PETEOS film as the object to be polished, the film thickness of the PETEOS film is measured using an optical interference film thickness meter, and the difference in film thickness before and after polishing, that is, chemical mechanical polishing The film thickness decreased by the following procedure was obtained.
For the wafer with PETEOS film, 21 specific points are set evenly in the diameter direction except for the outer circumference of 5 mm, and the polishing rate at each point is calculated from the difference in thickness of the PETEOS film before and after polishing and the polishing time for these specific points. The average value was used as the polishing rate.
The polishing rate was evaluated for every 50th continuously polished wafer, and the average of 6 evaluations was taken as the polishing rate, and the value was 580 nm / min. It can be said that the polishing rate is good when this value is 400 nm / min or more, and particularly good when the value is 500 nm / min or more.

3.1.3-2. Evaluation of in-plane uniformity of polishing rate Using the difference in thickness of the PETEOS film before and after polishing at the 21 specific points (this value is referred to as “polishing amount”) In-plane uniformity was calculated.
In-plane uniformity of polishing amount (%) = (standard deviation of polishing amount ÷ average value of polishing amount) × 100
The in-plane uniformity of the polishing rate was evaluated for each 50th wafer polished continuously, and the average of 6 evaluations was 5.6%. It can be said that the in-plane uniformity is good when this value is within 7%, and particularly good when it is 6% or less.
3.1.3-3. Scratch Evaluation The surface to be polished of the PETEOS film-coated wafer after chemical mechanical polishing was subjected to a defect inspection as follows using a defect inspection apparatus (manufactured by KLA-TENCOR, model “KLA2351”).
First, the number of defects counted by the defect inspection apparatus was measured for the entire range of the wafer surface under the conditions of a pixel size of 0.62 μm and a threshold of 30. Next, 100 of these defects are extracted at random, displayed on the display of the apparatus and observed, and the defects are scratches or adhered foreign matter (such as abrasive grains contained in the chemical mechanical polishing aqueous dispersion). The ratio of scratches with a major axis of 0.20 μm or more in the total number of defects was calculated, and the number of scratches per wafer was calculated from this.
The scratch was evaluated for every 50th wafer polished continuously, and the average of 6 evaluations was 1 piece / surface. It can be said that the scratch is good when this value is within 3 pieces / surface, and is particularly good when the value is 2 pieces / surface or less.

3.2. Examples 2 to 10 and Comparative Examples 1 to 6
A chemical mechanical polishing pad was produced in the same manner as in Example 1 except that the types of the components (A) to (D), the types of other components, and the amounts used were as shown in Table 1, and the chemical mechanical polishing performance was evaluated. . The results are shown in Table 1.

In addition, the abbreviation of each component in Table 1 is shown below.
(A) Ethylene- (meth) acrylic acid copolymer “N1560”: trade name “Nucleel N1560”, manufactured by Mitsui DuPont Chemical Co., Ltd., ethylene-methacrylic acid copolymer “N2030H” ... trade name “Nucleel N2030H” "Mitsui-Du Pont Chemical Co., Ltd., ethylene-methacrylic acid copolymer" A210K "... Trade name" Rex Pearl EAA A210K ", Nippon Polyethylene Co., Ltd., ethylene-acrylic acid copolymer (control) "LE520H" ... Trade name "Novatech LD LE520H", manufactured by Nippon Polyethylene Co., Ltd., low density polyethylene (B) Epoxy resin "1013S" ... Trade name "1013S", manufactured by Japan Epoxy Resin Co., Ltd., tetraphenolethane type epoxy resin , Epoxy equivalent is about 200 (180-220)
“JER604”: trade name “jER604”, manufactured by Japan Epoxy Resin Co., Ltd., glycidylamine type epoxy resin, epoxy equivalent is about 120 (110 to 130)
(C) Water-soluble particles “WSP”: trade name “Dexy Pearl β-100”, manufactured by Pearl Ace Co., Ltd., β-cyclodextrin (average particle size 15 μm)
In Table 1, the amount of (C) water-soluble particles used is shown as a volume part relative to 100 parts by volume of component (A).
(D) Organic peroxide “Park mill D-40”: trade name “Park mill D-40”, manufactured by NOF Corporation, containing 40% by mass of dicumyl peroxide.
Polymer “LDPE LE520H”: trade name “Novatech LD LE520H”, manufactured by Nippon Polyethylene Co., Ltd., low density polyethylene cross-linking aid “TAIC-M60”: trade name “TAIC-M60”, manufactured by Nippon Kasei Chemical Co., Ltd. 60% by mass of allyl isocyanurate is contained.

  According to the chemical mechanical polishing pads of Examples 1 to 10, it has a polishing layer containing 100 parts by mass of component (A), 2 to 40 parts by mass of component (B), and 5 to 120 parts by mass of component (C). It can be understood that, in chemical mechanical polishing, it is possible to obtain a polished surface having a high polishing rate, excellent in-plane uniformity of the polishing amount, and less scratches.

FIG. 1 is a cross-sectional view schematically showing an example of a chemical mechanical polishing pad according to an embodiment of the present invention. FIG. 2 is a cross-sectional view schematically showing another example of a chemical mechanical polishing pad according to an embodiment of the present invention. FIG. 3 is a cross-sectional view schematically showing another example of a chemical mechanical polishing pad according to an embodiment of the present invention. FIG. 4 is a cross-sectional view schematically showing another example of a chemical mechanical polishing pad according to an embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Polishing layer, 10a ... Polishing surface, 10b ... Non-polishing surface, 12, 14 ... Recess, 16 ... Support layer, 100, 200, 300, 400 ... Chemical mechanical polishing pad

Claims (6)

Component (A): 100 parts by mass of an ethylene- (meth) acrylic acid copolymer,
(B) component; an epoxy resin;
(C) component; 5-120 mass parts of water-soluble particles,
Having a polishing layer comprising
The polishing layer contains the component (B) corresponding to an epoxy group content of 0.1 to 1.0 mol per 1.0 mol of the repeating unit derived from the (meth) acrylic acid of the component (A). Chemical mechanical polishing pad manufactured by Component (A): 100 parts by mass of an ethylene- (meth) acrylic acid copolymer,
(B) component; 2-40 mass parts of epoxy resins,
(C) component; 5-120 mass parts of water-soluble particles,
A chemical mechanical polishing pad having a polishing layer comprising:   The component (A) is a copolymer of ethylene and at least one selected from the group consisting of acrylic acid, methacrylic acid, methyl acrylate, and ethyl acrylate. The chemical mechanical polishing pad described in 1.   The chemical mechanical polishing pad according to claim 1, wherein the component (C) has an average particle size of 5 to 80 μm.   The chemical mechanical polishing pad according to claim 1, wherein the component (A) is crosslinked with the component (D): organic peroxide.   A chemical mechanical polishing method comprising a step of chemically mechanically polishing an object to be polished using the chemical mechanical polishing pad according to claim 1.

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