JP2010074081A - Solid state imaging device - Google Patents

Abstract

An object of the present invention is to suppress color mixing caused by modulation of a channel stop portion by applying a potential to a transfer electrode.
A plurality of light receiving portions, a transfer channel regularly arranged in the same direction between the light receiving portions, a plurality of first transfer electrodes disposed on the transfer channel, and the same as the first transfer electrodes. A plurality of second transfer electrodes 6B having a function of transferring charge on the transfer channel paired with the first transfer electrode and a function of reading the charge accumulated in the corresponding light receiving portion to the transfer channel. Is provided. All of the first and second transfer electrodes are formed separately from the adjacent first or second transfer electrodes. A plurality of first and second wirings 11A and 11B for applying a driving pulse are provided on the first and second transfer electrodes via an interlayer insulating film, respectively, and the first transfer electrode, the first wiring, The second transfer electrode and the second wiring are electrically connected through contact regions 12A and 12B.
[Selection] Figure 1

Description

  The present invention relates to a solid-state imaging device, and more particularly to a CCD (Charge Coupled Device) type solid-state imaging device.

  CCD type solid-state imaging devices are required to have a large angle of view, finer pixels, and higher speed driving. In the CCD type solid-state imaging device, in order to read out the signal charge converted from light in the light receiving unit and transfer it to the output unit, it is necessary to periodically apply a potential as a transfer pulse to a transfer electrode arranged on the transfer channel. .

  As the arrangement of the transfer electrodes, there are one having a multilayer structure in which a part of adjacent transfer electrodes are arranged to be overlapped and one having a single layer structure in which adjacent transfer electrodes are arranged without being overlapped. In recent years, with the miniaturization of solid-state imaging devices, one pixel size has been miniaturized to 1.7 μm or less, and in order to reduce the height of the peripheral portion of the pixel and reduce the scatter of incident light. Layered ones are common.

  In the past, the number of transfer electrodes per pixel was mainly 3 or more. However, recently, a configuration in which two transfer electrodes per pixel, that is, one transfer electrode serving as both a transfer electrode and a readout electrode is provided. This is because with the miniaturization of pixels, the transfer electrodes are also required to be miniaturized, and it is necessary to increase the area of the transfer electrodes per pixel to ensure the amount of charge that can be accumulated per one transfer electrode. It is.

  In a CCD type solid-state imaging device, in order to read and transfer signal charges, it is necessary to regularly apply a driving pulse to each row of transfer electrodes. Therefore, for example, the transfer electrodes are formed by being connected in one direction. In general, a potential barrier is formed in a semiconductor substrate under a transfer electrode formed by connection using a method such as ion implantation. This potential barrier serves to prevent the charge generated and accumulated in a certain light receiving portion from leaking to the light receiving portions of adjacent pixels. Hereinafter, the potential barrier formed under the transfer electrode formed in this manner is referred to as “channel stop”.

  However, when a drive pulse is applied to the transfer electrode, the electric field generated thereby modulates the channel stop via the interlayer insulating film, and the charge accumulated in the light receiving part leaks to the adjacent light receiving part, or the channel stop Is modulated and the barrier is lowered, there is a risk of causing so-called color mixing in which the photoelectrically converted charges diffuse in the channel stop region and leak to the adjacent pixels.

  As one method for suppressing channel stop modulation due to an electric field generated from a transfer electrode, a technique is known in which a transfer electrode also serving as a readout electrode is formed separately from other adjacent transfer electrodes or readout / transfer electrodes. ing. (For example, see Patent Document 1).

  FIG. 10 shows the structure of the transfer electrode described in Patent Document 1. In this method of forming the transfer electrode structure, first, the first transfer electrode 31A is formed by being connected in one direction as in the prior art. Next, the second transfer electrode 31B, which also serves as a readout electrode, for reading out the electric charge accumulated in the light receiving unit 32 is separated from the other adjacent first transfer electrode 31A and the second transfer electrode 31B to form a floating island shape. Form. Subsequently, in order to be able to apply a drive pulse to the second transfer electrode 31B, a wiring 33 is formed on the first transfer electrode 31A, and the wiring 33 and the second transfer electrode 31B are connected via a contact 34. .

The advantage of this method is that the layer of the first transfer electrode 31A exists between the wiring 33 for applying a drive pulse to the second transfer electrode 31B that also serves as the readout electrode and the substrate interface, and therefore the light is accumulated in the light receiving unit 32. In other words, the influence of a relatively large drive pulse when reading the generated charge on the channel stop can be reduced, and the occurrence of color mixing can be reduced.
JP 2006-140411 A

  In the future, a solid-state imaging device is required to have a large number of pixels of 10 million pixels or more, and further, it is required to realize high-speed driving that enables moving image shooting in addition to still image shooting. Therefore, it is necessary to miniaturize the channel stop. However, the finer the channel stop, the more difficult it is to design and form a potential barrier, and it becomes more difficult to suppress color mixing.

  In the above-described conventional method, since the transfer electrode formed on the channel stop is formed as the same layer as the transfer electrode formed on the transfer channel, the transfer electrode and the substrate formed on the channel stop are formed. It is difficult to increase the thickness of the interlayer insulating film existing between the interface and the drive pulse applied to the first transfer electrode when transferring the charge modulates the channel stop, thereby causing color mixing. There is a risk of generating.

  In addition, in a situation where one is a drive pulse supplied from the upper wiring through a contact and the other is a drive pulse supplied from the transfer electrode formed also on the channel stop, The rise and fall of the pulse differ depending on the type. For this reason, it is necessary to individually design the transfer, making it difficult to design with a margin for the charge transfer time and the electric field required for the transfer. As a result, in order to transfer charges efficiently, it is necessary to increase the width of the transfer channel, which hinders future miniaturization. Conversely, if the transfer channel cannot be wide, it is difficult to secure an electric field necessary for transfer, and high-speed driving becomes difficult.

  The present invention suppresses the occurrence of color mixing due to modulation of the channel stop portion by applying a potential to the transfer electrode, and maintains high performance such as sensitivity, smear, and saturation, and enables solid-state imaging that enables high-speed driving An object is to provide an apparatus.

  In order to solve the above-described problems, a solid-state imaging device according to the present invention is regularly arranged in the same direction between a plurality of light receiving portions formed in a regular arrangement on a semiconductor substrate and the light receiving portions in the semiconductor substrate. Formed in the same layer as the first transfer electrode on the transfer channel, the transfer channel formed on the transfer channel, and a plurality of first transfer electrodes disposed on the transfer channel. A plurality of second transfer electrodes having a function of transferring charge on the transfer channel and a function of a read electrode for reading the charge accumulated in the corresponding light receiving unit to the transfer channel, All of the transfer electrode and the second transfer electrode are formed separately from the adjacent first transfer electrode or the second transfer electrode, and the upper part of the first transfer electrode and the second transfer electrode The portion is provided with a plurality of first wirings for applying a driving pulse to the first transfer electrode and a plurality of second wirings for applying a driving pulse to the second transfer electrode via an interlayer insulating film, The first transfer electrode and the first wiring are electrically connected via a first contact region, and the second transfer electrode and the second wiring are electrically connected via a second contact region. It is characterized by being.

  According to the solid-state imaging device having the above configuration, all the first transfer electrodes and the second transfer electrodes are formed by separating the adjacent first transfer electrodes and the second transfer electrodes from each other. The possibility that the channel stop portion under the formed transfer electrode is modulated and the barrier is lowered is eliminated. In addition, since an interlayer insulating film exists between the first wiring and the second wiring and the semiconductor substrate, a channel due to an electric field generated from the wiring is formed as compared with the case where only the gate insulating film exists on the transfer electrode. The influence on the stop portion can be reduced and color mixing can be suppressed.

  The solid-state imaging device of the present invention can take the following aspects based on the above configuration.

  That is, it is preferable that the plurality of first wirings and the plurality of second wirings are formed in the same layer. Thereby, the distance from the surface of the solid-state imaging device to the light receiving unit can be suppressed to be small, which is advantageous for increasing the sensitivity of the solid-state imaging device.

  In addition, at least one of the first wiring and the second wiring can be formed of polysilicon. Both the first wiring and the second wiring may be formed of polysilicon.

  In addition, it is preferable that at least one of the first wiring and the second wiring is formed of a material having a resistivity lower than that of polysilicon. It is more preferable that both the first wiring and the second wiring are formed of a material having a resistivity lower than that of polysilicon. Polysilicon is generally used as the wiring material, but in order to transfer charges at high speed, the voltage pulse is transferred to the transfer electrode by forming the wiring with a material having a lower resistivity than polysilicon. It is effective to prevent the delay and dullness of the pulse.

  Examples of a material having a lower resistivity than polysilicon include tungsten, aluminum, copper, or metal silicide.

  Further, it is preferable that an antireflection film made of a material different from the interlayer insulating film is formed below the first wiring or the second wiring. Thereby, the distance between the wiring and the substrate interface can be further increased.

  Examples of the material for the antireflection film include materials having a dielectric constant different from that of the silicon oxide film. As an example of this, the film may be formed of a silicon nitride film or a silicon oxynitride film that is generally used in a silicon process.

  The wiring extends so as to be commonly connected to the plurality of first transfer electrodes or the second transfer electrodes adjacent to each other in one direction, and the antireflection film includes a long axis of the wiring It can be arranged between the first transfer electrodes adjacent in the same direction and between the second transfer electrodes adjacent in the same direction as the major axis of the wiring.

  The antireflection film is formed on the entire surface of the light receiving portion and a part of at least one of the first transfer electrode and the second transfer electrode via the interlayer insulating film, and the first transfer. A part of the upper part of the electrode or a part of the upper part of the second transfer electrode may be removed.

  Further, a light shielding film is formed on the first transfer electrode and the second transfer electrode via the interlayer insulating film, the antireflection film, and the further interlayer insulating film. be able to.

  The antireflection film may be formed so as to cover an upper portion of the first transfer electrode, an upper portion of the second transfer electrode, and an entire surface of the light receiving portion. In that case, it is preferable that the antireflection film is removed in a part of the light receiving portion. This facilitates supplying hydrogen atoms for suppressing dark current into the silicon substrate.

  Embodiments of the present invention will be described below with reference to the drawings.

(First embodiment)
FIG. 1 shows a planar configuration of a solid-state imaging device according to the first embodiment. FIG. 2 shows a cross-sectional configuration taken along line AA ′ of FIG. FIG. 3 shows a cross-sectional configuration taken along line BB ′ of FIG. FIG. 4 shows a cross-sectional configuration taken along line CC ′ of FIG. FIG. 5 shows a cross-sectional configuration along the line DD ′ in FIG. However, in FIG. 2 and FIG. 3, illustration of some layers is omitted.

  As shown in FIGS. 1 to 5, the solid-state imaging device of the present embodiment is configured by a four-phase drive CCD. A plurality of light receiving portions 2 are formed in a matrix on a semiconductor substrate 1 (see FIGS. 4 and 5). The semiconductor substrate 1 is an n-type silicon substrate. The light receiving unit 2 is a photodiode formed in a first p-type well 3 formed on the semiconductor substrate 1 and having a light receiving unit n-type region 2A and a light receiving unit p-type region 2B.

  A plurality of transfer channels 4 extending in the first direction are formed in a region between the light receiving portions 2 in the semiconductor substrate 1. The transfer channel 4 is an n-type region formed in the second p-type well 5 formed at a distance from the light receiving unit 2. On the transfer channel 4, a first transfer electrode 6A and a second transfer electrode 6B that also serve as a readout electrode are formed at intervals. In the following description, when there is no need to distinguish the first transfer electrode 6A and the second transfer electrode 6B, they are referred to as transfer electrodes 6.

  In the present embodiment, all the first transfer electrodes 6A and the second transfer electrodes 6B are formed separately from the other adjacent first transfer electrodes 6A and other second transfer electrodes 6B.

  The first transfer electrode 6A and the second transfer electrode 6B are made of polysilicon or the like formed on the semiconductor substrate 1 with the gate insulating film 7 interposed therebetween. The gate insulating film 7 is a gate insulating film for the transfer electrode 6. The film thickness of the transfer electrode 6 may be about 100 nm.

  In order to prevent the outflow and inflow of signal charges between adjacent light receiving portions 2, a p-type channel stop portion 8 is formed around the light receiving portion 2 in the semiconductor substrate 1 except for a part thereof.

  A region where the channel stop portion 8 is not formed between the light receiving portion 2 and the transfer channel 4 (see FIG. 4) is controlled by the second transfer electrode 6B to read out the signal charges accumulated in the light receiving portion 2. A gate portion 9 is formed.

  From the viewpoint of reading signal charges, it is preferable that the length of the second transfer electrode 6B along the transfer channel 4 is longer than that of the first transfer electrode 6A.

  On the first transfer electrode 6A, a plurality of first wirings 11A for supplying drive pulses to the first transfer electrode 6A are formed via the first interlayer insulating film 10. A plurality of second wirings 11B for supplying drive pulses to the second transfer electrode 6B are formed on the second transfer electrode 6B via the first interlayer insulating film 10. The first wiring 11A is connected to the first transfer electrode 6A through a contact 12A, and the second wiring 11B is connected to the second transfer electrode 6B through a contact 12B. Hereinafter, when it is not necessary to distinguish the first wiring 11A and the second wiring 11B, they are referred to as wirings 11. The wiring 11 is made of, for example, polysilicon and has a film thickness of 150 nm.

  An antireflection film 13 made of a material different from that of the interlayer insulating film is formed on the light receiving portion 2 between the transfer electrodes 6 via the gate insulating film 7. A first wiring 11 </ b> A and a second wiring 11 </ b> B are formed through the first interlayer insulating film 10. The antireflection film 13 is made of, for example, a silicon nitride film, and has a film thickness of, for example, 50 nm.

  As described above, the solid-state imaging device according to the present embodiment has the following advantages because the antireflection film 13 is disposed under the wiring 11. That is, since the gate insulating film 7, the antireflection film 13, and the first interlayer insulating film 10 exist between the first wiring 11 </ b> A and the second wiring 11 </ b> B on the channel stop portion 8 and the semiconductor substrate 1, the transfer electrode 6. Compared with the case where only the gate insulating film 7 exists as described above, the influence of the electric field generated from the wiring 11 on the channel stop portion 8 can be suppressed, and color mixing can be reduced.

  The first transfer electrode 6A, the second transfer electrode 6B, the antireflection film 13, the first wiring 11A, and the second wiring 11B are covered with a second interlayer insulating film 14.

  In order to prevent light from entering the transfer channel 4, a light shielding film 15 made of tungsten or the like is provided via the second interlayer insulating film 14 to the first transfer electrode 6A, the second transfer electrode 6B, the first wiring 11A, The second wiring 11 </ b> B and the antireflection film 13 are partly covered.

  As shown in FIGS. 4 and 5, on the light shielding film 15, a step formed by the first transfer electrode 6A, the second transfer electrode 6B, the first wiring 11A, and the second wiring 11B is flattened. An interlayer insulating film 16 is formed. The third interlayer insulating film 16 may be formed of a BPSG (borophosphosilicate glass) film or the like. Alternatively, the third interlayer insulating film 16 may be thinly formed, a material having a refractive index different from that of the third interlayer insulating film may be embedded, and the lens may be planarized to form a downward convex lens.

  An intra-layer lens 17 made of, for example, a silicon oxide film or a silicon nitride film may be formed at a position corresponding to the light receiving unit 2 on the third interlayer insulating film 16. In this case, in order to flatten the valley between the lenses, the first flattening layer 18 made of a resin having a high transmittance for visible light is formed. A color filter 19 for each color component of R (red), G (green), and B (blue) is formed in the region above the inner lens 17 in the first planarizing layer 18. The arrangement of each color is such that the R color component and the B color component are alternately filled between the G color components arranged in a checkered pattern. The color filter 19 is not limited to this configuration, and may be a complementary color system, for example. The color filter 19 is flattened by the second flattening layer 20, and an on-chip lens 21 is formed on the color filter 19.

  Below, an example of the drive method of the solid-state imaging device of this embodiment is shown. First, signal charges are read from the predetermined light receiving unit 2 to the transfer channel 4. A read pulse φVR is applied through the second wiring 11B to the second transfer electrode 6B corresponding to the light receiving unit 2 that performs reading. The potential of the read pulse φVR may be 12V, for example. At this time, the other second transfer electrode 6B is in a low level state. Further, the first transfer electrode 6A corresponding to the light receiving unit 2 that performs reading is set to the high level, and the other first transfer electrodes 6A are set to the low level. The high level and the low level may be 0V and -6V, respectively.

  Thereby, the transfer channel 4 is in a state where the potential depth can receive the signal charge from the light receiving unit 2. Further, the potential of the read gate unit 9 changes, and the signal charge read operation from the light receiving unit 2 to the transfer channel 4 is performed.

  Next, according to a known method, transfer pulses φV1 to φV4 corresponding to four-phase driving are applied to the first transfer electrode 6A and the second transfer electrode 6B at a predetermined timing. The transfer pulses φV1 to φV4 may be set to −6 V to 0 V, for example. As a result, the signal charge read to the transfer channel 4 is transferred through the transfer channel 4. Further, the signal is transferred in the horizontal direction by a horizontal transfer unit (not shown), converted into a voltage corresponding to the signal charge amount by an output unit (not shown), and output.

  The solid-state imaging device of the present embodiment configured as described above has the following characteristics. That is, all the first transfer electrodes 6A and the second transfer electrodes 6B are formed so as to separate the adjacent first transfer electrodes 6A and the second transfer electrodes 6B. Further, since the gate insulating film 7, the antireflection film 13, and the first interlayer insulating film 10 exist between the first wiring 11 </ b> A and the second wiring 11 </ b> B on the channel stop portion 8 and the semiconductor substrate 1, the transfer electrode Compared to the case where only the gate insulating film 7 exists as described above, the influence of the electric field generated from the wiring 11 on the channel stop portion 8 can be reduced, and color mixing can be further suppressed.

  Both the first wiring 11A and the second wiring 11B may be formed of a material having a specific resistance smaller than that of polysilicon. Examples of a material having a specific resistance smaller than that of polysilicon include tungsten, aluminum, copper, metal silicide, and the like.

  When the first wiring 11A and the second wiring 11B are formed of a material having a specific resistance smaller than that of polysilicon, the wiring can be made thinner than when the wiring is formed of polysilicon. Thereby, the ratio of the area occupied by the wiring per pixel can be reduced, and the ratio of the area occupied by the light receiving portion can be increased. Alternatively, it is possible to cope with pixel miniaturization that will further advance in the future. Further, the dullness and delay of the transfer pulse can be reduced as compared with the polysilicon wiring, which can contribute to high speed driving.

For example, the resistivity of commonly used polysilicon wiring is about 7.5 × 10 ⁻⁴ Ω · m, and the resistivity of tungsten is about 4.9 × 10 ⁻⁸ Ω · m. Here, when a polysilicon wiring having a square with a side of 150 nm and a cross-sectional area of 2.25 × 10 ⁻² square μm is formed as the wiring 11, a wiring having the same resistance is formed of tungsten. The cross-sectional area may theoretically be 1.5 × 10 ⁻⁶ square μm.

  In addition, when metals such as tungsten, aluminum, and copper are used for the wiring, metal atoms may enter the semiconductor substrate through the gate insulating film due to etching or the like during wiring formation, which may cause deterioration in image quality. is there. In the case of this embodiment, when the antireflection film 13 is formed of a silicon nitride film or a silicon oxynitride film, the gate insulating film 7, the antireflection film 13 and the first interlayer insulating film 10 constitute an ONO film. Therefore, there is an advantage that the effect of preventing the entry of metal atoms into the semiconductor substrate is higher than in the case of a single gate oxide film.

  As shown in FIGS. 6 and 7, the antireflection film 13 may be formed not only on the light receiving unit 2 but also on a part of the transfer electrode 6. FIG. 6 shows a planar configuration of a solid-state imaging device having such a configuration. FIG. 7 shows a cross-sectional configuration taken along line E-E ′ of FIG. 6. In FIG. 6, the antireflection film 13a is formed via the first interlayer insulating film 10 so as to run over a part of the upper part of the first transfer electrode 6A and a part of the upper part of the second transfer electrode 6B. . Thereby, the antireflection film 13a covers the entire area of the light receiving unit 2, and the antireflection effect of incident light can be further enhanced.

  Further, as shown in FIG. 7, the light shielding film 15 covers the first transfer electrode 6A, the second transfer electrode 6B, the first wiring 11A, and the second wiring 11B. The interlayer insulating film 10, the antireflection film 13a, and the second interlayer insulating film 14 are formed. Thus, when hydrogen annealing is performed, hydrogen atoms are supplied to the semiconductor substrate 1 through the first interlayer insulating film 10 and the second interlayer insulating film 14, and silicon existing between the semiconductor substrate 1 and the gate insulating film 7 is present. Generation of dark current can be further suppressed because of bonding with a dangling bond of an atom.

  Alternatively, the antireflection film 13 may be formed as shown in FIGS. FIG. 8 shows a planar configuration of the solid-state imaging device, and FIG. 9 shows a cross-sectional configuration taken along line F-F ′ of FIG. 8. In this configuration, the antireflection film 13b is formed on the entire surface of the light receiving unit 2, the first transfer electrode 6A, and the second transfer electrode 6B via the first interlayer insulating film 10. Thereby, the antireflection film 13b covers the entire light receiving part 2, and the antireflection effect of incident light can be further enhanced.

  Further, as shown in FIG. 9, it is preferable that an opening 22 is formed in the antireflection film 13 b on the light receiving unit 2. As a result, when hydrogen annealing is performed, hydrogen atoms are supplied to the semiconductor substrate 1 through the opening 22 and are combined with the dangling bonds of silicon atoms existing between the semiconductor substrate 1 and the gate insulating film 7. Generation of dark current can be further suppressed.

  In the above embodiment and modification, the example in which the light receiving units 2 are arranged in a matrix is shown, but the light receiving units 2 may not be arranged in a matrix as long as they are regularly arranged. Although the interline transfer type has been described as an example, the present invention can also be applied to a frame interline transfer transfer type solid-state imaging device.

  The solid-state image pickup device according to the present invention can realize a solid-state image pickup device corresponding to high-speed driving by suppressing the occurrence of color mixing due to the modulation of the channel stop portion due to the potential application to the transfer electrode. This is useful as a solid-state imaging device of a type.

FIG. 2 is a plan view illustrating a planar configuration of the solid-state imaging device according to the first embodiment. Sectional drawing which shows the cross-sectional structure in the A-A 'line of FIG. Sectional drawing which shows the cross-sectional structure in the B-B 'line | wire of FIG. Sectional drawing which shows the cross-sectional structure in the C-C 'line of FIG. Sectional drawing which shows the cross-sectional structure in the D-D 'line | wire of FIG. The top view which shows the example of a change of the structure of the anti-reflective film in the solid-state imaging device of 1st Embodiment Sectional drawing which shows the cross-sectional structure in the E-E 'line of FIG. The top view which shows the other example of a change of the structure of the anti-reflective film in the solid-state imaging device of 1st Embodiment Sectional drawing which shows the cross-sectional structure in the F-F 'line of FIG. The top view which shows the structure of the transfer electrode in the CCD type solid-state imaging device of a prior art example

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2, 32 Light-receiving part 2A Light-receiving part n-type area | region 2B Light-receiving part p-type area | region 3 1st p-type well 4 Transfer channel 5 2nd p-type well 6A, 31A 1st transfer electrode 6B, 31B 2nd transfer electrode (read-out electrode) Transfer electrode)
7 Gate insulating film 8 Channel stop portion 9 Read gate portion 10 First interlayer insulating film 11, 33 Wiring 11A First wiring 11B Second wiring 12A, 12B, 34 Contacts 13, 13a, 13b Antireflection film 14 Second interlayer insulating film 15 light shielding film 16 third interlayer insulating film 17 inner lens 18 first planarizing layer 19 color filter 20 second planarizing layer 21 on-chip lens 22 opening

Claims (15)

A plurality of light receiving portions formed regularly arranged on a semiconductor substrate;
A transfer channel formed regularly in the same direction between the light receiving portions in the semiconductor substrate;
A plurality of first transfer electrodes disposed on the transfer channel;
A function of transferring charges on the transfer channel formed in the same layer as the first transfer electrode on the transfer channel and paired with the first transfer electrode, and a charge accumulated in the corresponding light receiving unit. A plurality of second transfer electrodes having a function as a read electrode for reading out to the transfer channel;
All of the first transfer electrode and the second transfer electrode are formed separately from the adjacent first transfer electrode or the second transfer electrode,
A plurality of first wirings for applying a driving pulse to the first transfer electrode via an interlayer insulating film and an upper portion of the first transfer electrode and the second transfer electrode are driven to the second transfer electrode. A plurality of second wirings for applying a pulse;
The first transfer electrode and the first wiring are electrically connected via a first contact region,
The solid-state imaging device, wherein the second transfer electrode and the second wiring are electrically connected via a second contact region.   The solid-state imaging device according to claim 1, wherein the plurality of first wirings and the plurality of second wirings are formed in the same layer.   The solid-state imaging device according to claim 1, wherein at least one of the first wiring and the second wiring is formed of polysilicon.   The solid-state imaging device according to claim 3, wherein both of the first wiring and the second wiring are formed of polysilicon.   The solid-state imaging device according to claim 1, wherein at least one of the first wiring and the second wiring is formed of a material having a resistivity lower than that of polysilicon.   The solid-state imaging device according to claim 5, wherein both the first wiring and the second wiring are formed of a material having a resistivity lower than that of polysilicon.   The solid-state imaging device according to claim 5 or 6, wherein the material having a resistivity lower than that of polysilicon is tungsten, aluminum, copper, or metal silicide.   The solid-state imaging device according to claim 1, wherein an antireflection film made of a material different from the interlayer insulating film is formed below the first wiring or the second wiring.   The solid-state imaging device according to claim 8, wherein the antireflection film is formed of a material having a dielectric constant different from that of the silicon oxide film.   The solid-state imaging device according to claim 8, wherein the antireflection film is formed of a silicon nitride film or a silicon oxynitride film. The wiring extends so as to be commonly connected to the plurality of first transfer electrodes or the second transfer electrodes adjacent in one direction,
The antireflection film is disposed between the first transfer electrodes adjacent in the same direction as the major axis of the wiring and between the second transfer electrodes adjacent in the same direction as the major axis of the wiring. Item 11. The solid-state imaging device according to any one of Items 8 to 10.   The antireflection film is formed on the entire surface of the light receiving portion and a part of at least one of the first transfer electrode and the second transfer electrode with the interlayer insulating film interposed therebetween. The solid-state imaging device according to claim 8, wherein the solid-state imaging device is removed at a part of the upper part or a part of the upper part of the second transfer electrode.   The light shielding film is formed on the upper part of the first transfer electrode and the upper part of the second transfer electrode via the interlayer insulating film, the antireflection film, and the further interlayer insulating film. Solid-state imaging device.   The solid-state imaging according to claim 8, wherein the antireflection film is formed so as to cover an upper portion of the first transfer electrode, an upper portion of the second transfer electrode, and an entire surface of the light receiving portion. apparatus.   The solid-state imaging device according to claim 14, wherein the antireflection film is removed in a part of the light receiving unit.

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