JP2010065244A - Deposited film forming device and deposited film forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a deposited film forming device and a deposited film forming method capable of forming a deposited film which is excellent in uniformity of film thickness and film performance, and has fewer image defects with preferable productivity and at a low cost. <P>SOLUTION: The deposited film forming device 100 includes a part protruded from the end part of a base holder 107, the part releases an end part supply gas to the inner part of a reaction vessel 101, whereby the evenness of plasma in the longitudinal direction is improved. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a deposited film forming apparatus and a deposited film forming method for forming a light receiving member using a deposited film, particularly a non-single crystalline deposited film such as amorphous or polycrystalline, on a substrate to be processed. It is. The present invention particularly relates to a deposited film forming apparatus and a deposited film forming method for forming a deposited film by a plasma CVD (Chemical Vapor Deposition) method.

Conventionally, semiconductor deposited films composed of non-single crystal materials have been proposed, and some of them have been put to practical use. For example, amorphous silicon compensated for at least one of hydrogen and halogen (for example, fluorine, chlorine) is used as the light receiving member. Such a light receiving member can be used as an element member in, for example, a semiconductor device, an electrophotographic photoreceptor device, an image input line sensor, an imaging device, a photovoltaic device, various other electronic elements, and optical elements.
In forming this kind of deposited film, it is often required to make the deposited film uniform in film thickness and film characteristics. Therefore, it is effective to devise a method for supplying and exhausting the source gas, to rotate the substrate to be processed on which the deposited film is formed, and to adopt a method for making the plasma uniform when using the plasma CVD method. It is shown that there is.

Also, by providing a first source gas introduction pipe along the longitudinal direction of the cylindrical base, and further providing a second source gas introduction part on the coaxial outer periphery of the cylindrical base at a position opposite to the exhaust means In addition, a deposition film forming apparatus using a plasma CVD method in which film quality and film thickness distribution are made uniform has also been proposed (see Patent Document 1).
Further, in order to efficiently cool the sample, a processing method has been proposed in which a gas that does not disturb the plasma state flows from the back of the sample as a cooling gas and is released into the furnace from the end of the sample (see Patent Document 2). .
In addition, a production system for continuously producing this kind of deposited film has also been proposed. By separating the transport means before forming the deposited film and after forming the deposited film, dust is deposited on the substrate before forming the deposited film. For the purpose of preventing adhesion, a series of deposited film forming apparatuses using a transfer machine has also been proposed (see Patent Document 3).
JP-A-10-183356 Japanese Patent Publication No. 06-054771 Special Registration No. 2907404

Conventionally, the deposited film has been made uniform and image defects have been reduced by the measures described above. However, in recent years, with the enhancement of the functions of such an apparatus using a deposited film, for example, the digitization and colorization of an electrophotographic apparatus, the uniformity of the deposited film and the reduction of image defects are required more than ever. .
That is, for example, in a recent high-quality color apparatus using an electrophotographic process, the gradation is improved, so even a non-uniformity or partial defect of a deposited film, which has not been practically problematic in the past, can be formed. There is a possibility of causing visible irregularities and image defects in the image.
In these respects, in the conventional techniques as described above, there is a need to improve both the uniformity of the deposited film and the reduction of image defects. That is, there is a need to improve the uniformity of the deposited film, particularly the uniformity of plasma in the longitudinal direction of the substrate, the reduction of image defects, and the reduction of adhesion of foreign matter to the substrate during plasma processing that causes image defects. In addition to these, there is a need for a deposited film forming apparatus and a production system with good productivity.

Specifically, with respect to the uniformity of plasma in the longitudinal direction of the substrate, there is a demand for improving the uniformity of plasma, particularly at the longitudinal ends of the substrate.
As means for improving the uniformity of the deposited film at the longitudinal end of the substrate, the reaction vessel and the electrode are made sufficiently large with respect to the substrate, and the introduction and exhaust of the gas are made uniform within a sufficiently large range with respect to the substrate. It is conceivable to form a deposited film in a uniform region of plasma. However, in this case, since the reaction container is large, the cost of the deposited film forming apparatus itself is high, and extra source gas and electric power are required, resulting in high cost. Therefore, in order to improve the uniformity of the deposited film at the longitudinal end portion of the substrate without increasing the size of the reaction vessel, there is a means for adjusting the non-uniformity near the longitudinal end portion of the substrate at the reaction vessel end portion. Necessary.

In order to reduce adhesion of foreign matter to the substrate during plasma processing, it is necessary to reduce dust generation from the inside of the deposited film forming apparatus.
In addition, it is necessary for a deposited film forming apparatus and a production system with good productivity to be compatible with an automatic substrate transfer system.
The present invention has been made in view of the prior art as described above, and is capable of forming a deposited film with excellent uniformity in film thickness and film characteristics and with few image defects with high productivity and at low cost. An object is to provide a film forming apparatus and a deposited film forming method.

In order to achieve the above-described object, a deposited film forming apparatus according to the present invention includes:
A reaction vessel;
Exhaust means for exhausting the interior of the reaction vessel;
A substrate holder for holding a substrate installed in the reaction vessel;
A substrate holder holding means for holding one end in the longitudinal direction of the substrate holder installed inside the reaction vessel;
Raw material gas introduction means for introducing a raw material gas for forming a deposited film into the reaction vessel;
High-frequency power application means for exciting the source gas by applying high-frequency power to an electrode facing the base and longer than the longitudinal direction of the base;
In a deposited film forming apparatus for forming a deposited film on the substrate,
The reaction vessel includes a rod-like body, and the rod-like body penetrates through the inside of the substrate holder, protrudes from an end of the substrate holder opposite to the substrate holder holding means, and an end supply gas flows therein. A flow path is provided, and a portion protruding from the end of the substrate holder is provided with a discharge portion for discharging the end supply gas into the reaction vessel.

Further, the rod-like body is provided with a discharge portion for discharging the end supply gas into the reaction vessel on the substrate holder holding means side.
Furthermore, it has a means which can open and close the wall surface on the opposite side to the said base | substrate holder holding means of the said reaction container.
Furthermore, it has a means which can move the said rod-shaped body to the longitudinal direction of the said base | substrate holder, It is characterized by the above-mentioned.
Furthermore, the reaction vessel has means for heating the substrate from the inside of the substrate holder, the substrate is electrically connected to the substrate holder, and the substrate holder is electrically connected to the substrate holder holding means. And is electrically connected to the rod-shaped body at the end opposite to the substrate holder holding means, the substrate holder holding means is electrically connected to the reaction vessel and grounded, and the rod-shaped body is A portion protruding from the substrate holder is electrically connected to the reaction vessel and grounded, whereby both ends in the longitudinal direction of the substrate are grounded.
Furthermore, it has a means which makes the said base | substrate holder rotatable, The edge part on the opposite side to the said base | substrate holder holding means of the said base | substrate holder and the said rod-shaped body are contacted via a sliding body, It is characterized by the above-mentioned.

In order to achieve the above-described object, the deposited film forming method according to the present invention includes:
The inside of the reaction vessel is evacuated,
Attach the substrate to the substrate holder,
The substrate holder is installed inside the reaction vessel while holding one end in the longitudinal direction of the substrate holder,
Introducing a source gas for forming a deposited film into the reaction vessel,
The source gas is excited by applying high frequency power to an electrode facing the substrate and longer than the substrate,
In a deposited film forming method for forming a deposited film on the substrate,
A rod-shaped body that penetrates the inside of the base holder, protrudes from the end of the base holder opposite to the base holder holding means, and has a flow path through which the end supply gas flows is provided in the base holder. The deposited film is formed while discharging the end supply gas into the reaction container from a discharge portion provided at a portion protruding from the end.

Furthermore, the deposited film is formed while discharging the end supply gas into the reaction vessel from the discharge portion provided on the substrate holder holding means side of the rod-shaped body.
Furthermore, heating the base from the inside of the base holder,
Electrically connecting the substrate with the substrate holder;
The base holder is electrically connected to the base holder holding means, and is electrically connected to the rod-like body at an end opposite to the base holder holding means;
The substrate holder holding means is electrically connected to the reaction vessel and grounded,
A deposited film is formed while grounding both ends in the longitudinal direction of the substrate by electrically connecting and grounding a portion of the rod-shaped body protruding from the substrate holder to the reaction vessel.
Furthermore, the end of the substrate holder opposite to the substrate holder holding means and the rod-shaped body are brought into contact with each other through a sliding body, and the substrate holder is rotated to form a deposited film. To do.

The reaction vessel includes a rod-like body, and the rod-like body (1) penetrates the inside of the substrate holder, (2) protrudes from the end of the substrate holder opposite to the substrate holder holding means, and (3) the rod-shaped body End supply gas is discharged from the protruding part of the body into the reaction vessel. Thereby, since the uniformity of the plasma in the longitudinal direction of the substrate, particularly in the vicinity of the edge of the substrate, can be improved, a deposited film excellent in the film thickness and the uniformity of film characteristics can be formed at low cost. Furthermore, since the gas supply to the end portion can be performed while suppressing dust generation during the formation of the deposited film, it is possible to improve the uniformity of the plasma in the deposited film forming apparatus in the longitudinal direction of the substrate and to suppress the generation of dust. Coexistence is possible. Furthermore, automatic conveyance of the substrate is also possible.
Accordingly, it is possible to form a deposited film having excellent uniformity in film thickness and film characteristics within the deposited film formation surface of the substrate and with few image defects with high productivity.

Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a diagram schematically illustrating an example of a deposited film forming apparatus 100 for manufacturing an electrophotographic photoreceptor by an RF (Radio Frequency) -CVD (Chemical Vapor Deposition) method.
The deposited film forming apparatus 100 is an apparatus that forms a deposited film on the cylindrical substrate 102 by plasma processing. The cylindrical cathode electrode 103, the insulator 110, the upper wall 109, the upper lid 122, and the bottom wall 112 form a reaction vessel 101 that can be depressurized.
Under the reaction vessel 101, a substrate holder holding means 123 for holding a substrate holder 107 to which a cylindrical substrate 102 and a cap 108 are attached is provided. Since the substrate holder holding means 123 is entirely composed of a conductive member, the substrate holder 107 is electrically connected to the bottom wall 112 and grounded.

Further, inside the reaction vessel 101, there is a rod-like body 130 that penetrates the inside of the substrate holder 107, the substrate holder holding means 123, and the heater 111 for heating.
The rod-shaped body 130 protrudes into the reaction vessel 101 from the opening 113 on the opposite side of the substrate holder 107 from the substrate holder holding means 123.
The rod-shaped body 130 is provided with a flow path (not shown) through which gas flows, and the end of the rod-shaped body 130 on the substrate holder holding means 123 side controls the flow rate of the source gas via the connection pipe 131. It is connected to a gas supply system comprising a mixing device 116 with a mass flow controller (not shown) for adjustment and a source gas inflow valve 132. In addition, a discharge portion 133 that discharges gas into the reaction vessel 101 is provided at a portion protruding from the opening 113. The discharge part 133 is a hole having the same diameter, and a plurality of discharge parts 133 are formed at equal intervals in the circumferential direction.

The cylindrical base 102 only needs to have a material corresponding to the purpose of use. As the material of the cylindrical substrate 102, for example, copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, and stainless steel are preferable because of their good electrical conductivity. . Among these, aluminum is optimal in consideration of workability and manufacturing cost. In this case, as the aluminum forming the cylindrical substrate 102, for example, either an Al—Mg alloy or an Al—Mn alloy is preferably used.
A heater 111 for heating is provided inside the reaction vessel 101. Any heater 111 may be used as long as it can be used in vacuum. Specifically, heat-exchanging heaters such as sheathed heaters, plate heaters, ceramic heaters, and carbon heaters, heat radiation lamps such as halogen lamps and infrared lamps, and heat exchange using liquid or gas as a heat medium Means are listed as targets.

In the reaction vessel 101, a source gas introduction pipe (source gas introduction means) 104 for introducing a source gas into the reaction vessel 101 is provided. The source gas introduction pipe 104 extends in parallel with the longitudinal direction of the cylindrical base 102 to be held. The source gas introduction pipe 104 is connected via a connection pipe 127 to a gas supply system including a mixing device 116 having a mass flow controller (not shown) for adjusting the flow rate of the source gas, and a source gas inflow valve 117. Has been.
In the exhaust system provided in the deposited film forming apparatus 100, a vacuum pump unit (not shown) as exhaust means is connected to an exhaust port 118 of the bottom wall 112 through an exhaust pipe 121. An exhaust main valve 119 is provided in the exhaust pipe 121. Further, the reaction vessel 101 is attached with a vacuum gauge 120 for measuring the pressure inside the reaction vessel 101. By using these, the inside of the reaction vessel 101 can be maintained at a predetermined pressure suitable for each step. For the vacuum pump unit, for example, a rotary pump or a mechanical booster pump can be used.

  A high-frequency power source (high-frequency power applying means) 106 is electrically connected to the cylindrical cathode electrode 103 via a matching box 105 having a matching circuit. The upper and lower sides of the cylindrical cathode electrode 103 are insulated from the upper wall 109 and the bottom wall 112 by an insulator 110 made of ceramics. An upper lid 122 is installed on the upper wall 109, and a substrate holder 107 that holds the cylindrical substrate 102 is carried in, carried out, and installed in the reaction vessel 101 from here.

An example of a procedure for forming a deposited film using the deposited film forming apparatus 100 configured as described above will be described below with reference to FIG.
First, the substrate holder 107 on which the cylindrical substrate 102 and the cap 108 are mounted is placed on the substrate holder holding means 123 in the reaction vessel 101. Thereafter, the upper lid 122 is installed, and the inside of the reaction vessel 101 is evacuated by a vacuum pump unit (not shown). For example, Ar or He gas necessary for heating the cylindrical substrate 102 is introduced into the evacuated reaction vessel 101 through the mixing device 116, the raw material gas inflow valve 117, the connection pipe 127, and the raw material gas introduction pipe 104. . And the exhaust speed of a vacuum pump unit (not shown) is adjusted, confirming the vacuum gauge 120 so that the inside of the reaction container 101 may become a predetermined pressure. This adjustment can be performed, for example, by adjusting the rotation frequency of a mechanical booster pump of a vacuum pump unit (not shown).
Next, after reaching a predetermined pressure, the temperature of the cylindrical substrate 102 is set to a desired temperature of 200 [° C.] to 450 [° C.], more preferably 250 [° C.] to 350 [° C.] by the heater 111 for heating. Control.

After the preparation for forming the deposited film is completed by the above procedure, the deposited film is formed on the cylindrical substrate 102.
For this purpose, first, as the source gas for forming the deposited film, the main source gas, the dilution gas, and the characteristic improving gas are mixed through the mixing device 116 and are introduced into the reaction vessel 101 through the source gas introduction pipe 104. Introduce.
Furthermore, as the end supply gas, the main raw material gas, the dilution gas, and the property improving gas are mixed through the mixing device 116 and introduced into the reaction vessel 101 through the rod-shaped body 130.
At that time, the exhaust speed of the vacuum pump unit (not shown) is adjusted while checking the vacuum gauge 120 so that the reaction vessel 101 has a desired pressure of 13.3 [mPa] to 1330 [Pa]. This adjustment can be performed, for example, by adjusting the rotation frequency of a mechanical booster pump of a vacuum pump unit (not shown).

The main source gas used when forming the deposited film and the main source gas used as the end supply gas include silane (SiH ₄ ), disilane (Si ₂ H ₆ ), silicon tetrafluoride (SiF ₄ ), and hexafluoride. A source gas for forming amorphous silicon of disilicon (Si ₂ F ₆ ) or a mixed gas thereof can be used. As a dilution gas, hydrogen (H ₂ ), argon (Ar), or helium (He) can be used. Further, as the characteristic improving gas, those containing nitrogen atoms, those containing oxygen atoms, those containing carbon atoms, those containing fluorine atoms, or a mixed gas thereof may be used in combination. As those containing nitrogen atoms for use in this, nitrogen _(N 2), ammonia (NH ₃₎ can be mentioned. Oxygen (O ₂ ), nitrogen monoxide (NO), nitrogen dioxide (NO ₂ ), dinitrogen oxide (N ₂ O), carbon monoxide (CO), carbon dioxide (CO ₂ ) are included as oxygen atoms. Is mentioned. As those containing carbon atoms, methane _(CH 4), ethane _{(C 2 H} 6), ethylene _{(C 2 H} 4), acetylene _{(C 2 H} 2), include propane _(C 3 _{H 8).} Examples of those containing fluorine atoms include germanium tetrafluoride (GeF ₄ ) and nitrogen fluoride (NF ₃ ). Further, a characteristic improving gas such as diborane (B ₂ H ₆ ), boron fluoride (BF ₃ ), or phosphine (PH ₃ ) may be simultaneously introduced into the discharge space.

Next, after the pressure in the reaction vessel 101 is stabilized, the high-frequency power source 106 is set to a desired power, and the high-frequency power is supplied to the cylindrical cathode electrode 103 via the high-frequency matching box 105, whereby the reaction vessel 101 A high frequency glow discharge is caused inside. The supplied power can be, for example, an RF band, particularly a frequency of 13.56 [MHz]. By this discharge energy, the deposited film forming gas introduced into the reaction vessel 101 is excited to generate excited species, that is, decomposed, and deposited film containing a desired silicon atom as a main component on the cylindrical substrate 102. Is formed.
As described above, a deposited film is formed on the outer peripheral surface of the cylindrical substrate 102.

After the deposition film is formed, the supply of the deposition film forming source gas, the end supply gas and the high-frequency power and the heating of the substrate are stopped, and the reaction vessel 101 is evacuated. Thereafter, the inside of the reaction vessel 101, the raw material gas introduction pipe 104 and the rod-shaped body 130 is purged using a purge gas, for example, an inert gas such as Ar, He, N ₂ or the like. After the purge process is completed, when the cylindrical substrate 102 is lowered to a desired temperature (for example, room temperature), the substrate holder 107 on which the cylindrical substrate 102 is mounted is unloaded from the reaction vessel 101.

Thereafter, as necessary, the deposited film and powdery by-products deposited in the reaction vessel 101 are cleaned. As a procedure, first, instead of the cylindrical substrate 102, a substrate holder 107 equipped with a cleaning dummy substrate having substantially the same shape is loaded and installed in the reaction vessel 101, and then the reaction vessel is used by a vacuum pump unit (not shown). 101 is exhausted. Subsequently, a cleaning gas necessary for the cleaning process is introduced into the reaction vessel 101 via the mixing device 116 and the source gas introduction pipe 104. And the exhaust speed of a vacuum pump unit (not shown) is adjusted, confirming the vacuum gauge 120 so that the inside of the reaction container 101 may become a predetermined pressure. This adjustment can be performed, for example, by adjusting the rotation frequency of a mechanical booster pump of a vacuum pump unit (not shown).
Examples of the cleaning gas used in the cleaning process include CF ₄ , a mixed gas of CF ₄ and O ₂ , SF ₆ , NF ₃ , and ClF ₃ (chlorine trifluoride). In this embodiment, the cleaning time is used. ClF ₃ which is effective in terms of shortening the length is used. In the present embodiment, it is effective to use an inert gas for dilution in order to adjust the concentration of the cleaning gas. Examples of the inert gas include He, Ne, and Ar. Among them, it is preferable to use Ar.

After the pressure in the reaction vessel 101 is stabilized, the high-frequency power source 106 is set to a desired power, and the high-frequency power is supplied to the cylindrical cathode electrode 103 via the high-frequency matching box 105, whereby the high-frequency power is supplied into the reaction vessel 101. Causes a glow discharge. This discharge energy decomposes the cleaning gas introduced into the reaction vessel 101, reacts with the deposited film and by-products, exhausts the reaction gas, and cleans the inside of the reaction vessel 101.
Next, the supply of high-frequency power is stopped after the cleaning process, and the reaction vessel 101 is evacuated. Thereafter, the inside of the reaction vessel 101, the raw material gas introduction pipe 104 and the rod-shaped body 130 is purged using a purge gas, for example, an inert gas such as Ar, He, N ₂ or the like. After the purge process is completed, when the cleaning dummy substrate is lowered to a desired temperature (for example, room temperature), the substrate holder 107 on which the cleaning dummy substrate is mounted is unloaded from the reaction vessel 101.

Furthermore, another specific embodiment of the present invention will be described with reference to FIG.
2, the same components as those in FIG. 1 are denoted by the same reference numerals as those in FIG.
In the embodiment shown in FIG. 2, the discharge part 234 is newly provided in the rod-shaped body 130 and the discharge part 235 is provided in the base holder holding means 123 in comparison with the embodiment shown in FIG. 1. Further, a seal mechanism 236 is provided between the rod-shaped body 130 and the substrate holder holding means 123. The discharge part 235 is a hole having the same diameter, and a plurality of discharge parts 235 are formed at equal intervals in the circumferential direction.
As a result, the end supply gas introduced into the rod-shaped body 130 is discharged from the discharge portion 133 into the reaction vessel 101 as in the case of FIG.

Further, the end supply gas discharged from the discharge part 234 is also released into the reaction vessel 101 from the discharge part 235 provided in the substrate holder holding means 123. The seal mechanism 236 prevents the end supply gas discharged from the discharge portion 234 from entering the heater 111 for heating.
Except for the discharge parts 234 and 235 and the seal mechanism 236, the process is the same as in FIG. 1, and a deposited film is formed by the same method as in the embodiment shown in FIG.

Furthermore, another specific embodiment of the present invention will be described with reference to FIG.
3, the same components as those in FIG. 2 are denoted by the same reference numerals as those in FIG.
In FIG. 3, a gate valve 322 is used instead of the upper lid 122. As a result, the substrate holder 107 that holds the cylindrical substrate 102 can be loaded, unloaded, and installed in the reaction vessel 101 by the substrate transfer mechanism 601 shown in FIG.

  In the embodiment shown in FIG. 3, a means 337 capable of moving the rod-shaped body 130 in the longitudinal direction of the base holder 107 is newly provided. The movable means 337 includes a bellows (not shown) for maintaining the airtightness of the reaction vessel 101 and an air cylinder (not shown) for allowing the rod-shaped body 130 to move. The movable means 337 is not particularly limited, and may be a driving method using a cylinder mechanism using air pressure, hydraulic pressure, or water pressure, or a driving method using a ball screw mechanism using an electric motor. A part of the connection pipe 131 connected to the rod-shaped body 130 also moves in the longitudinal direction of the rod-shaped body 130 together with the rod-shaped body 130. For this reason, a buffer portion 333 made of, for example, a flexible tube is further provided in a part of the connection pipe 131 (between the portion that moves together with the rod-like body 130 and the portion that does not move).

When the substrate holder 107 is carried into and out of the reaction vessel 101, the holding unit 114 of the substrate holder 107 is held by the substrate transfer mechanism 601 shown in FIG. Therefore, the rod-shaped body 130 is lowered by the movable means 337 so that the tip of the rod-shaped body 130 is below the opening 113.
Next, the substrate holder 107 is installed in the reaction vessel 101, that is, placed on the substrate holder holding means 123.
After that, the tip of the rod-shaped body 130 moves or rises in the longitudinal direction of the substrate holder 107 through the opening 113 at the end of the substrate holder 107 opposite to the substrate holder holding means 123 to the position shown in FIG. To do.

Next, the substrate transport mechanism 601 will be described with reference to the drawings.
FIG. 6 is a diagram schematically showing the substrate transport mechanism 601. The substrate transport mechanism 601 has a transport container 602 that can be vacuum-tight and has a vertical mechanism for docking with the deposited film forming apparatus 300. Further, the transfer container 602 has a gate valve 605 at the bottom and an arm 603 that can move up and down inside. The arm 603 has a holding portion 604 that holds the base holder 107. Further, the transport container 602 is movable on the rail 606 in the horizontal direction. By this substrate transport mechanism 601, the substrate holder 107 on which the cylindrical substrate 102 is mounted can be loaded, installed, and unloaded while the inside of the reaction vessel 301 is in a vacuum state. This not only improves productivity, but also prevents contamination inside the reaction vessel 301 and is effective in reducing image defects.

A method for carrying in, installing, and carrying out the substrate holder 107 on which the cylindrical substrate 102 and the cap 108 are mounted using the substrate transport mechanism 601 will be specifically described.
First, how to carry in and install will be described. The transfer container 602 that holds and stores the substrate holder 107 to which the cylindrical substrate 102 and the cap 108 are attached in advance and evacuates the inside moves to the deposited film forming apparatus 300. Next, the transfer container 602 is lowered, and the gate valve 605 of the transfer container 602 is docked with the gate valve 322 of the reaction container 301. After docking, the space between the gate valve 605 of the transfer container 602 and the gate valve 322 of the reaction container 301 is evacuated by an exhaust device (not shown). When the pressure in the transfer container 602, between the gate valve 605 and the gate valve 322, and in the reaction container 301 becomes substantially the same pressure, the gate valve 605 and the gate valve 322 are opened. Next, the arm 603 that holds the substrate holder 107 to which the cylindrical substrate 102 and the cap 108 are attached descends from the inside of the transport container 602. Then, the base holder 107 is placed on the base holder holding means 123, the holding portion 604 is in a non-holding state, and the base holder 107 to which the cylindrical base 102 and the cap 108 are attached is installed. After installation, the arm 603 is raised, the gate valve 605 and the gate valve 322 are closed, and the space between the gate valve 605 and the gate valve 322 is returned to atmospheric pressure. Thereafter, the transport container 602 rises and is separated from the reaction container 301, and the carry-in and installation are completed.

  Next, the carrying-out method will be described. The transfer container 602 whose inside has been evacuated in advance moves to the deposited film forming apparatus 300. Next, the transfer container 602 is lowered, and the gate valve 605 of the transfer container 602 is docked with the gate valve 322 of the reaction container 301. After docking, the space between the gate valve 605 of the transfer container 602 and the gate valve 322 of the reaction container 301 is evacuated by an exhaust device (not shown). When the pressure in the transfer container 602, between the gate valve 605 and the gate valve 322, and in the reaction container 301 become substantially the same pressure, the gate valve 605 and the gate valve 322 are opened. Next, the arm 603 descends from the inside of the transport container 602, and the holding unit 604 holds the base holder 107 to which the cylindrical base 102 and the cap 108 are attached. After the holding, the arm 603 is raised, the gate valve 605 and the gate valve 322 are closed, and the space between the gate valve 605 and the gate valve 322 is returned to atmospheric pressure. Thereafter, the transport container 602 rises and is separated from the reaction container 301, and the unloading is completed.

An example of a procedure for forming a deposited film using the deposited film forming apparatus 300 configured as described above will be described below with reference to FIGS.
First, the substrate holder 107 to which the cylindrical substrate 102 and the cap 108 are mounted is loaded into the reaction vessel 301 by the substrate transport mechanism 601, placed on the substrate holder holding means 123, and the gate valve 322 is closed. Subsequently, the rod-shaped body 130 rises and protrudes into the reaction vessel 301 from the opening 113 on the opposite side of the substrate holder 107 from the substrate holder holding means 123.
Thereafter, the process is the same as in FIG. 2, and a deposited film is formed by the same method as in FIG.
As described above, a deposited film is formed on the outer peripheral surface of the cylindrical substrate 102.

After the deposition film is formed, the supply of the deposition film forming source gas, the end supply gas and the high-frequency power, and the heating of the substrate are stopped, and the reaction vessel 301 is evacuated. Thereafter, the inside of the reaction vessel 301, the source gas introduction pipe 104, and the rod-shaped body 130 is purged using a purge gas, for example, an inert gas such as Ar, He, N ₂ or the like. After the purge process is completed, the substrate holder 107 to which the cylindrical substrate 102 is mounted is carried out from the reaction container 301 using the substrate transport mechanism 601. When carrying out, the tip of the rod-shaped body 130 is lowered so as to be below the opening 113.

  Thereafter, as necessary, the deposited film and powdery by-products deposited in the reaction vessel 301 are cleaned. As a procedure, first, instead of the cylindrical substrate 102, a substrate holder 107 equipped with a cleaning dummy substrate having substantially the same shape is carried into and installed in the reaction vessel 301 using the substrate transport mechanism 601, and a vacuum pump The reaction vessel 301 is evacuated by a unit (not shown). Thereafter, the cleaning process is the same as in FIG. 2, and the cleaning process is performed in the same manner as in FIG.

Next, the supply of high-frequency power is stopped after the cleaning process, and the reaction vessel 301 is evacuated. Thereafter, the inside of the reaction vessel 301 and the source gas introduction pipe 104 is purged using a purge gas, for example, an inert gas such as Ar, He, N ₂ or the like. After the purge process is completed, the substrate holder 107 on which the dummy substrate for cleaning is mounted is carried out of the reaction vessel 301 using the substrate transport mechanism 601.

Furthermore, another specific embodiment of the present invention will be described with reference to FIG.
4, the same components as those in FIG. 3 are denoted by the same reference numerals as those in FIG.
In FIG. 4, an upper receiving portion 438 and a sliding portion 439 are newly provided. Further, the rod-shaped body 130 is in contact with the valve body 323 of the gate valve 322. The upper receiving portion 438 contacts the base holder 107 at the position of the opening 113 of the holder 107. The upper receiving portion 438 is made of a conductive material. For example, copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, and stainless steel are preferable because of their good electrical conductivity. Of these, stainless steel and nickel are most suitable from the viewpoint of dust generation and durability during repeated use.

The sliding part 439 may be electrically connected to the upper receiving part 438 and may be slid to be electrically connected to the rod-shaped body 130. For example, metal lubricants such as leaf springs, wire brushes, spiral springs, and bearings, and solid lubricants such as boron nitride, graphite, and tungsten disulfide can be used. Of these, bearings and solid lubricants are preferred in terms of dust generation, adhesion at high temperatures, and durability during repeated use.
The rod-shaped body 130 may be electrically connected to the sliding portion 439 and the valve body 323 of the gate valve 322, and is formed of a conductive material. For example, copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, and stainless steel are preferable because of their good electrical conductivity. Of these, stainless steel and nickel are most suitable from the viewpoint of dust generation and durability during repeated use.

With the above-described configuration, both ends in the longitudinal direction of the substrate holder 107 are electrically connected to the upper wall 109 of the reaction vessel 401, become conductive, and are grounded. At this time, since the upper end portion of the cap 108 is electrically connected to the base holder 107 and the cylindrical base 102 is in contact with and electrically connected to the cap 108 and the base holder 107, the base holder 107 and the cap 108 are connected. Thus, both ends in the longitudinal direction of the cylindrical substrate 102 are electrically connected to the upper wall 109 of the reaction vessel 401, become conductive, and are grounded.
Except for the above, this is the same as FIG. 3, and a deposited film is formed by the same method as in FIG.

Furthermore, another specific embodiment of the present invention will be described with reference to FIG.
5, the same components as those in FIG. 4 are denoted by the same reference numerals as those in FIG.
In FIG. 5, a support base 526, a lower sliding part 525, a substrate holder holding means 524, a rotation drive shaft 527, a motor 528, and a discharge part 535 provided on the support base 526 are newly provided in the lower part of the reaction vessel 501. It has been. Further, an upper receiving portion 540, a rotating sliding portion 541, a pedestal 542, and a longitudinal sliding portion 543 are provided on the upper portion of the reaction vessel 501.

By driving the motor 528, the rotational drive shaft 527 is driven, and the base holder holding means 524 is connected to the rod-shaped body by a gear (not shown) provided on the rotational drive shaft 527 and the base holder holding means 524. A rotational driving force about 130 is transmitted.
At this time, the outer peripheral portion of the lower sliding portion 525 fixed to the support base 526 and the inner peripheral surface of the base holder holding means 524 slide so that the cylindrical base 102 is mounted on the base holder 107. In this state, it can be rotated around the rod-shaped body 130 together with the substrate holder holding means 524.
Since the support base 526, the lower sliding portion 525, the base holder holding means 524, and the rotation drive shaft 527 are all made of conductive members, the base holder 107 and the bottom wall 126 are in an electrically connected state. .

The pedestal 542 and the longitudinal sliding portion 543 are fixed in the reaction vessel 501. By driving the means 337 capable of moving the rod-shaped body 130 in the longitudinal direction of the substrate holder 107, the outer circumferential surface of the rod-shaped body 130 and the inner circumferential surface of the sliding portion 543 for the longitudinal direction slide to form a rod-shaped body. The body 130 moves in the longitudinal direction of the base holder 107.
The rotating sliding portion 541 is fixed to the upper receiving portion 540. Further, the upper receiving portion 540 contacts the base holder 107 at the position of the opening 113 of the holder 107.
When the motor 528 is driven, the base holder 107 rotates around the rod-shaped body 130 as described above. At this time, the upper receiving portion 540 and the rotation sliding portion 541 rotate with the base holder 107 and the rod-like body 130 as the center, with the contact surface between the rotation sliding portion 541 and the base 542 as the sliding surface.

Since the upper receiving portion 540, the rotation sliding portion 541, the pedestal 542, the longitudinal sliding portion 543, and the rod-like body 130 are all made of conductive members, the base holder 107 and the valve body of the gate valve 322 323 is in an electrically connected state. As a result, both ends in the longitudinal direction of the substrate holder 107 are electrically connected to the upper wall 109 of the reaction vessel 501 and become conductive, and the lower sliding portion 525 that is grounded is electrically connected to the support base 526. In addition, the substrate holder holding means 524 may be slid to be conductive.
Moreover, the sliding part 541 for rotation should just conduct | electrically_connect with the upper receiving part 540, and slides and the pedestal 542 and should just conduct | electrically_connect.
The longitudinal sliding portion 543 may be electrically connected to the pedestal 542 and slidably connected to the rod-shaped body 130.

Examples of the lower sliding portion 525, the rotating sliding portion 541, and the longitudinal sliding portion 543 are made of metal such as a leaf spring, a wire brush, a spiral spring, and a bearing, boron nitride, graphite, and tungsten disulfide. Solid lubricants such as can be used. Of these, bearings and solid lubricants are preferred in terms of dust generation, adhesion at high temperatures, and durability during repeated use.
Other than the above, it is the same as FIG. 4, and during the formation of the deposited film, it is the same as FIG. 4 except that the motor 528 is driven and the substrate holder 107 on which the cylindrical substrate 102 is installed rotates around the rod-shaped body 130. A deposited film is formed by this method.

In the deposited film forming apparatus 100 of the present embodiment configured as described above, the end supply gas is released from the portion protruding from the end of the substrate holder 107 into the reaction vessel 101, thereby generating the plasma in the longitudinal direction. Improves uniformity.
This is because the high frequency power supplied from the high frequency power source 106 to the cylindrical cathode electrode 103 propagates through the surface of the cylindrical cathode electrode 103 and is introduced into the reaction vessel 101 from the upper and lower ends of the cylindrical cathode electrode 103. . The high frequency power is consumed by the plasma discharge from the end, and the high frequency power propagates to the central portion of the reaction vessel 101 without being attenuated.
For this reason, the upper and lower ends of the reaction vessel 101 have a relatively high frequency power compared to the central portion. Therefore, it is presumed that the distribution of active species and ion species generated by decomposition of the raw material gas is different in the longitudinal direction. This is considered to be one factor causing the non-uniformity of the deposited film in the longitudinal direction.

The present invention increases the amount of gas in the upper part of the reaction vessel 101 by releasing the end supply gas into the reaction vessel 101 from the discharge portion 133. The value of the high-frequency power with respect to the unit gas amount is considered as one parameter in the manufacturing method that determines the active species and ion species generated by the decomposition of the raw material gas.
As in the present invention, when the amount of gas at the upper portion increases, the value of the high-frequency power with respect to the unit gas amount at the central portion and the upper portion becomes closer. Thereby, it is considered that the distribution of the active species and the ion species generated by the decomposition of the source gas approaches the central portion and the upper portion, and the uniformity of the deposited film to be formed is improved.
Further, the deposited film and by-products deposited inside the reaction vessel 101 are also homogenized, and the deposited film and by-products that are easily dropped off are reduced. Therefore, adhesion of the deposited film and by-products that fall off to the cylindrical substrate 102 during formation of the deposited film is reduced.

  Furthermore, since the substrate holder 107 to which the cylindrical substrate 102 and the cap 108 are attached can be automatically conveyed (in / out / install / unload) by the substrate conveyance mechanism 601, the productivity is excellent.

Since the rod-shaped body 130 is installed so as to penetrate through the inside of the base holder 107, the rod-shaped body 130 is positioned at the center of the cylindrical base 102. Therefore, since the rod-shaped body 130 becomes a blind spot when viewed from the surface of the cylindrical base body 102, even when dust is generated from the rod-shaped body 130, the probability of dust adhesion to the cylindrical base body 102 can be greatly reduced.
Further, the apparatus having the means 111 for heating the cylindrical substrate 102 from the inside of the substrate holder 107 is particularly effective for long-term use.
In the apparatus of the present invention, the rod-like body 130 is provided with a flow path through which the end supply gas flows, and discharges the end supply gas into the reaction vessel 101.
Therefore, the temperature rise of the longitudinal sliding portion 543 that is in contact with the rod-shaped body 130, and further the pedestal 542 and the rotating sliding portion 541 that are in contact with the longitudinal sliding portion 543 are suppressed. It is thought that it is because. The longitudinal sliding portion 543, the pedestal 542, and the rotating sliding portion 541 are preferably installed so as not to face the discharge space as much as possible. This is to prevent deterioration of the member due to film deposition on each member or exposure to plasma. Therefore, each member is installed in the substrate holder 107. Therefore, when approaching the heating means 111, deterioration may be promoted by heat. Therefore, according to the structure of this invention, since a temperature rise is suppressed, it becomes effective with respect to long-term use.

EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, this invention is not limited at all by these. In the following description, the same portions as those shown in the above-described embodiment will be described using the same reference numerals.
Example 1
Using the deposited film forming apparatus 100 shown in FIG. 1, amorphous silicon having a layer structure shown in FIG. 7 is formed on a cylindrical substrate 102 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a thickness of 3 mm under the conditions shown in Table 1. A deposited film (hereinafter abbreviated as an electrophotographic photosensitive member) was produced by the method described above.
In FIG. 7, reference numeral 701 denotes a component of the cylindrical substrate 102, reference numeral 702 denotes a lower blocking layer (first layer), reference numeral 703 denotes a photoconductive layer (second layer), and reference numeral 704 denotes a surface layer (third layer). ) Respectively.

With respect to the produced electrophotographic photosensitive member, “Vd longitudinal direction unevenness” and “white spot” were evaluated as follows.
"Vd longitudinal unevenness"
The drum manufactured in Example 1 was mounted on an evaluation machine and evaluated. As an evaluation machine, a copier (an iR5000 modified machine manufactured by Canon Inc.) was used. FIG. 8 shows a schematic diagram of the copying machine.
In FIG. 8, an electrophotographic photosensitive member 801 is supported so as to be rotatable in the clockwise direction in the figure. Around the electrophotographic photoreceptor 801, a pre-exposure device 808, a main charger 802, a latent image forming laser 809, and a potential sensor 803 are sequentially arranged in the clockwise direction. Next, a developing device 804 for developing the toner by attaching the toner onto the electrostatic latent image, a transfer charging device 805 (a) for transferring the toner image to the recording medium, and a separation charging device 805 (b). Has been placed. Thereafter, a cleaner 800 including a cleaning roller 806 and a cleaning blade 807 for removing residual toner is disposed.

When measuring the electrophotographic photosensitive member characteristics, the developing unit 804 and the cleaner 800 are removed. Then, instead of the developing unit 804, a potential probe (Mode 544P-4, not shown) that can measure electrophotographic characteristics at a predetermined position in the longitudinal direction of the electrophotographic photosensitive member is mounted, and the electrophotographic photosensitive member 801 of the electrophotographic photosensitive member 801 is mounted. Measure body characteristics. Evaluation of the electrophotographic photoreceptor characteristics measured in this manner was performed according to the following criteria.
The process speed is 265 mm / sec, the amount of pre-exposure (LED with a wavelength of 660 nm) is 4 lx · s, and the surface potential at the center in the longitudinal direction of the electrophotographic photosensitive member 801 is 450 V (dark potential) as measured by the potential probe. The current value of the main charger 802 is adjusted. Thereafter, the potential probe is moved in the longitudinal direction from the end of the electrophotographic photosensitive member 801, and the surface potential in the circumferential direction is measured at nine points at intervals of 40 mm in the longitudinal direction. Then, the average value of the measured values in the circumferential direction at each point was calculated as a dark potential, and the difference between the maximum value and the minimum value of the dark potential at 9 points was calculated and evaluated as Vd longitudinal direction unevenness.

Evaluation was carried out by relative evaluation with the result obtained in Comparative Example 1 as 100. In other words, the smaller the number, the better the evaluation result.
Furthermore, the evaluation results were ranked according to the following criteria.
A ... less than 50 B ... 50 or more and less than 70 C ... 70 or more and less than 90 D ... more than 90

"White Potty"
The drum manufactured in Example 1 was mounted on an evaluation machine and evaluated. Using an Canon iR5000 copying machine as an evaluation machine, an image obtained by copying a black A3 size original was observed, and the diameter of the electrophotographic photosensitive member per circle was 0.10 mm or more. The number of white spots (image defect portions) was counted. Evaluation was carried out by relative evaluation with the result obtained in Comparative Example 1 as 100. In other words, the smaller the number, the better the evaluation result.
Furthermore, the evaluation results were ranked according to the following criteria.
A ... less than 70 B ... 70 or more and less than 80 C ... 80 or more and less than 90 D ... more than 90

(Comparative Example 1)
An electrophotographic photosensitive member was produced under the same conditions as in Example 1 except that the deposited film forming apparatus 900 shown in FIG. 9 was used on a cylindrical substrate 102 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a thickness of 3 mm. Then, the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 3.
The deposited film forming apparatus 900 used in this comparative example has no rod-like body 130 and is opposite to the substrate holder holding means 123 with respect to the deposited film forming apparatus 100 of the embodiment corresponding to the present invention shown in FIG. The difference is that no gas is supplied into the reaction vessel 101 from the end of the reactor. That is, in Table 1, there is no end supply gas at the time of forming each layer.

(Comparative Example 2)
An electrophotographic photosensitive member was produced under the same conditions as in Example 1 except that the deposited film forming apparatus 1000 shown in FIG. 10 was used on a cylindrical substrate 102 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a thickness of 3 mm. Then, the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 3.
The deposited film forming apparatus 1000 used in this comparative example does not have a rod-like body 130 and is opposite to the substrate holder holding means 123 as compared with the deposited film forming apparatus 100 of the embodiment corresponding to the present invention shown in FIG. The difference is that a gas introduction part 1045 is provided at the end on the side, and the end supply gas is supplied from there to the inside of the reaction vessel 1001.

(Example 2)
7 using the deposited film forming apparatus 200 shown in FIG. 2 on the cylindrical substrate 102 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a wall thickness of 3 mm under the conditions shown in Table 2 in the same manner as in Example 1. The electrophotographic photosensitive member having the layer structure shown was formed by the method described above, and the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 3.
At this time, the ratio between the end supply gas amount released from the upper release portion 133 and the end supply gas amount released from the lower release portion 235 is approximately 2: 1. The number of holes and the hole diameter of the discharge part 234 were adjusted.

(Example 3)
Using the deposited film forming apparatus 300 shown in FIG. 3 and the substrate transport mechanism 601 shown in FIG. 6, on the cylindrical substrate 102 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a thickness of 3 mm, under the conditions shown in Table 2. The electrophotographic photosensitive member having the layer structure shown in FIG. 7 was formed in the same manner as in Example 1, and the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 3.

Example 4
Using the deposited film forming apparatus 400 shown in FIG. 4 and the substrate transport mechanism 601 shown in FIG. 6, on the cylindrical substrate 102 made of aluminum with a diameter of 80 mm, a length of 358 mm, and a wall thickness of 3 mm, under the conditions shown in Table 2. The electrophotographic photosensitive member having the layer structure shown in FIG. 7 was formed in the same manner as in Example 1, and the same evaluation as in Example 1 was performed. The evaluation results are shown in Table 3.

In Table 3, from the results of Comparative Examples 1 and 2 and Examples 1 to 4 of the present invention, according to the present invention, a deposited film having excellent uniformity in film characteristics in the longitudinal unevenness of the substrate and less image defects is obtained. Can be formed.
In contrast to the comparative example 1, the image defect is reduced by releasing the edge supply gas from the embodiment 130 in the comparative example 2, but the edge supply gas is released from the gas introduction part 1045 in the comparative example 2. It is considered that dust generation from the introduction unit 1045 has an influence. That is, it is considered that one of the factors is that the occurrence probability of dust generation due to film peeling or the like is increased by newly increasing the structure of another gas introduction unit 1045 in the reaction vessel 1001.

  Furthermore, with respect to the arrangement of the gas introduction unit 1045, the gas introduction unit 1045 itself, piping for introducing gas to the gas introduction unit 1045 (not shown), a fixing jig for the gas introduction unit 1045, and the like are provided in a cylindrical base. This is probably because the probability of dust adhesion to the cylindrical substrate 102 has increased due to the fact that it cannot be installed in the blind spot as viewed from the surface of 102. In the present invention, since the rod-shaped body 130 is positioned at the center with respect to the cylindrical base body 102, the rod-shaped body 130 becomes a blind spot as viewed from the surface of the cylindrical base body 102, so that dust is generated from the rod-shaped body 130. Even in this case, it is considered that the probability of adhesion of dust to the cylindrical substrate 102 has greatly decreased.

Further, by releasing the end supply gas into the reaction vessel 101 from the second embodiment to the substrate holder holding means 123 side, the uniformity of the film characteristics in the longitudinal direction is further improved, and image defects can be reduced. I understood.
Further, from Example 3, a means (gate valve 322) that can be opened and closed is provided on the wall surface (upper wall 109) of the reaction vessel 101 opposite to the substrate holder holding means 123, and the rod-shaped body 130 is disposed in the longitudinal direction of the substrate holder 107. By having the movable means 337, the substrate transfer mechanism 601 can automatically transfer (loading / installing / unloading). Further, it was found that even in a configuration excellent in productivity capable of automatic conveyance, the uniformity of film characteristics in the longitudinal direction is excellent, and image defects can be reduced.

  Furthermore, it can be seen from Example 4 that the protruding portion of the rod-shaped body 130 is electrically connected to the 101 reaction vessel, so that the uniformity of the film characteristics in the longitudinal direction is further improved and the image defects can be reduced. It was. The reason is presumed as follows. Within the reaction vessel 101, both ends in the longitudinal direction of the substrate holder 107 to which the cylindrical substrate 102 and the cap 108 are attached are electrically connected to the reaction vessel 101 and grounded. Thereby, the electrical state in the longitudinal direction of the cylindrical substrate 102 becomes equal in the reaction vessel 101. As a result, it is considered that the discharge energy is more evenly applied to the cylindrical substrate 102 and the plasma uniformity is further improved. Further, since the uniformity of plasma is further improved, the deposited film or by-product deposited inside the reaction vessel 101 becomes homogeneous as described above, and the peeling is reduced. Therefore, it is considered that adhesion to the cylindrical substrate 102 during formation of the deposited film is reduced.

(Example 5)
Using the deposited film forming apparatus 500 shown in FIG. 5 and the substrate transport mechanism 601 shown in FIG. 6, on the cylindrical substrate 102 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a thickness of 3 mm, under the conditions shown in Table 2. The electrophotographic photosensitive member having the layer structure shown in FIG. 7 was formed in the same manner as in Example 1, and the same evaluation as in Example 1 was performed.
During the formation of the deposited film, the cylindrical substrate 102 was rotated at 1 rpm.
Further, a 30-cycle electrophotographic photosensitive member was continuously formed, and the same evaluation as in Example 1 was performed for the 30th cycle.
Table 4 shows the obtained results. In Table 4, relative evaluation was performed with the result obtained in Comparative Example 3 described later as 100. In other words, the smaller the number, the better the evaluation result.

(Comparative Example 3)
Using the deposited film forming apparatus 1100 shown in FIG. 11 and the substrate transport mechanism 601 shown in FIG. 6, on the cylindrical substrate 102 made of aluminum having a diameter of 80 mm, a length of 358 mm, and a thickness of 3 mm, under the conditions shown in Table 2. An electrophotographic photosensitive member was formed in the same manner as in Example 5.
The deposited film forming apparatus 1100 used in this comparative example has a flow path through which an end supply gas flows in the rod-shaped body 1130 as compared with the deposited film forming apparatus 500 of the embodiment corresponding to the present invention shown in FIG. The difference is that there is no discharge part for discharging the end supply gas into the reaction vessel 1101. That is, in Table 2, there is no end supply gas at the time of forming each layer.

From Table 4, according to the present invention, it is possible to form a deposited film having excellent uniformity of film characteristics in the longitudinal direction of the substrate and few image defects.
Furthermore, it was found that a deposited film having excellent uniformity in film characteristics in the longitudinal direction and having few image defects can be formed even after long-term use.
In particular, regarding white spots, the 30th cycle is markedly improved compared to Comparative Example 3. The reason is presumed as follows.

After 30 cycles, the reaction vessel 101 was returned to atmospheric pressure, the substrate holder 107 and the cylindrical substrate 102 were installed, and rotated. As a result, it was confirmed that the apparatus of the present invention shown in FIG. It was done. On the other hand, regarding the apparatus of Comparative Example 3 in FIG. 11 as well, it was confirmed that the cylindrical base body 102 was not smoothly rotated.
Therefore, when the sliding part for rotation 541 and the sliding part for longitudinal direction 543 were removed and observed, no change was observed in the apparatus of the present invention in FIG. On the other hand, with respect to the apparatus of Comparative Example 3 in FIG. For this reason, it is considered that the smoothness of the rotation of the cylindrical base body 102 is impaired. As a result, the discharge during the formation of the deposited film is disturbed, the homogeneity of the deposited film or by-product deposited in the reaction vessel 101 is impaired, and the probability of film peeling is considered to have increased.

  On the other hand, in the apparatus of the present invention, the rod-shaped body 130 is provided with a flow path through which the end supply gas flows, and discharges the end supply gas into the reaction vessel 101. Therefore, the temperature rise of the longitudinal sliding portion 543 that is in contact with the rod-like body 130, and further the pedestal 542 and the rotating sliding portion 541 that are in contact with the longitudinal sliding portion 543 is suppressed. It is thought that there is. As a result of suppressing the temperature rise, it is presumed that the deterioration and corrosion of the solid lubricant were suppressed.

It is sectional drawing which shows typically an example of the deposited film formation apparatus which concerns on this invention. It is sectional drawing which shows typically an example of the deposited film formation apparatus which concerns on this invention. It is sectional drawing which shows typically an example of the deposited film formation apparatus which concerns on this invention. It is sectional drawing which shows typically an example of the deposited film formation apparatus which concerns on this invention. It is sectional drawing which shows typically an example of the deposited film formation apparatus which concerns on this invention. It is a schematic diagram which shows the base | substrate conveyance mechanism which concerns on this invention. It is a schematic diagram which shows an example of the layer structure of an electrophotographic photoreceptor. 1 is a schematic view of a copying machine used for evaluation of electrophotographic photosensitive member characteristics. FIG. It is sectional drawing which shows typically the deposited film forming apparatus of the comparative example 1. FIG. It is sectional drawing which shows the deposited film formation apparatus of the comparative example 2 typically. It is sectional drawing which shows typically the deposited film formation apparatus of the comparative example 3. FIG.

Explanation of symbols

101, 201, 301, 401,
501, 901, 1001, 1101 Reaction vessel 102 Cylindrical substrate 103 Cylindrical cathode electrode 104 Source gas introduction tube 105 High-frequency power source 107 Base holder 108 Cap 123, 524 Base holding means 130 Rod-shaped body 133 Release part 438 Upper receiving part 439 Sliding 524 Substrate holder holding means 525 Lower sliding portion 526 Support base 527 Rotating drive shaft 528 Motor 535 Release portion 540 Upper receiving portion 541 Rotating sliding portion 542 Base 543 Longitudinal sliding portion 601 Substrate transport mechanism 602 Transport container 603 Arm 604 Holding part 605 Gate valve 606 Rail

Claims (11)

A reaction vessel;
Exhaust means for exhausting the interior of the reaction vessel;
A substrate holder for holding a substrate installed in the reaction vessel;
A substrate holder holding means for holding one end in the longitudinal direction of the substrate holder installed inside the reaction vessel;
Raw material gas introduction means for introducing a raw material gas for forming a deposited film into the reaction vessel;
High-frequency power application means for exciting the source gas by applying high-frequency power to an electrode facing the base and longer than the longitudinal direction of the base;
In a deposited film forming apparatus for forming a deposited film on the substrate,
The reaction vessel comprises a rod-shaped body,
The rod-shaped body penetrates the inside of the base holder, protrudes from an end of the base holder opposite to the base holder holding means, and is provided with a flow path through which an end supply gas flows. The deposited film forming apparatus is characterized in that a portion projecting from the end portion is provided with a discharge portion for discharging the end portion supply gas into the reaction vessel.   2. The deposited film forming apparatus according to claim 1, wherein the rod-like body is provided with a discharge portion that discharges the end supply gas into the reaction vessel on the substrate holder holding means side.   The deposited film forming apparatus according to claim 1, further comprising means capable of opening and closing a wall surface of the reaction container opposite to the substrate holder holding means.   The deposited film forming apparatus according to any one of claims 1 to 3, further comprising means capable of moving the rod-like body in a longitudinal direction of the substrate holder. The reaction vessel has means for heating the substrate from the inside of the substrate holder,
The base is electrically connected to the base holder;
The base holder is electrically connected to the base holder holding means, and is electrically connected to the rod-like body at an end opposite to the base holder holding means;
The substrate holder holding means is electrically connected to the reaction vessel and grounded,
The rod-like body is grounded by electrically connecting the portion protruding from the substrate holder to the reaction vessel,
The deposited film forming apparatus according to claim 1, wherein both longitudinal ends of the substrate are grounded.   2. The apparatus according to claim 1, further comprising means for rotating the base holder, wherein the end of the base holder opposite to the base holder holding means and the rod-like body are contacted via a sliding body. The deposited film forming apparatus according to claim 5.   The deposited film forming apparatus according to claim 6, wherein the sliding body is made of a conductive bearing or a solid lubricant. The inside of the reaction vessel is evacuated,
Attach the substrate to the substrate holder,
The substrate holder is installed inside the reaction vessel while holding one end in the longitudinal direction of the substrate holder,
Introducing a source gas for forming a deposited film into the reaction vessel,
The source gas is excited by applying high frequency power to an electrode facing the substrate and longer than the substrate,
In a deposited film forming method for forming a deposited film on the substrate,
A rod-shaped body that penetrates the inside of the base holder, protrudes from the end of the base holder opposite to the base holder holding means, and has a flow path through which the end supply gas flows is provided in the base holder. A deposited film forming method, wherein the deposited film is formed while discharging the end supply gas into the reaction container from a discharge portion provided at a portion protruding from the end.   9. The deposited film is formed while discharging the end supply gas into the reaction container from a discharge portion provided on the substrate holder holding means side of the rod-shaped body. A method for forming a deposited film. Heating the substrate from within the substrate holder;
Electrically connecting the substrate with the substrate holder;
The base holder is electrically connected to the base holder holding means, and is electrically connected to the rod-like body at an end opposite to the base holder holding means;
The substrate holder holding means is electrically connected to the reaction vessel and grounded,
By electrically connecting the portion protruding from the base holder of the rod-shaped body to the reaction vessel and grounding,
10. The deposited film forming method according to claim 8, wherein the deposited film is formed while grounding both longitudinal ends of the substrate.   The deposited film is formed by rotating an end of the substrate holder opposite to the substrate holder holding means and the rod-shaped body through a sliding body and rotating the substrate holder. Item 11. The deposited film forming method according to any one of Items 8 to 10.

Images