JP2007056280A - Deposited film forming method and apparatus - Google Patents

Abstract

A transport apparatus, a deposition film forming method, and an apparatus capable of forming a deposited film with few image defects are provided.
Means for storing a cylindrical substrate in a depressurized transfer container, means for evacuating the stored transfer container, means for moving a transfer machine including the transfer container onto a deposited film forming apparatus, In the vacuum transfer apparatus having means for installing the cylindrical substrate stored in the transfer container in the deposited film forming apparatus, a first arm and a second arm having a variable interval in the transfer container It is characterized by having.
[Selection] Figure 1

Description

  The present invention provides a deposited film on a substrate, especially a functional deposited film, particularly an amorphous or polycrystalline film used for semiconductor devices, electrophotographic photosensitive members, line sensors for image input, imaging devices, photovoltaic elements, and the like. The present invention relates to a method and apparatus for forming a deposited film by plasma CVD suitable for forming a light receiving member using a non-single crystalline deposited film.

  Conventionally, as an element member used for a semiconductor device, an electrophotographic photoreceptor device, an image input line sensor, an imaging device, a photovoltaic device, other various electronic elements, optical elements, etc., amorphous silicon such as hydrogen and / or halogen ( For example, a semiconductor composed of an amorphous material (hereinafter, “amorphous” indicates non-single crystal) in the present invention, such as amorphous silicon (hereinafter abbreviated as “a-Si”) compensated with fluorine, chlorine, etc. Deposition films have been proposed, some of which have been put to practical use.

  Various systems capable of continuously producing such deposited films have been proposed, and in particular, there are a wide variety of transport systems, and various proposals have been made according to the application.

  A series of deposition film forming devices using a conveyor to prevent dust and the like from adhering to the substrate before the deposition film is formed by separating the transportation before the deposition film is formed and the transportation means after the deposition film is formed. Has also been proposed (see, for example, Patent Document 1).

  FIG. 6 is a schematic cross-sectional view showing an example of means for storing the cylindrical substrate in the transfer container in the conventional deposited film forming apparatus.

  A transfer arm 603 is interposed in the transfer container 601. The cylindrical substrate 609 is mounted on the substrate holder 610, and a cylindrical auxiliary member 608 is mounted on the substrate holder 610 on the cylindrical substrate 609.

The transfer arm 603 grasps the upper end portion of the substrate holder 610 and lifts and stores it in the transfer container 601.
Japanese Patent No. 2907404

  With such a conventional semiconductor manufacturing method and apparatus, it has become possible to obtain a method and apparatus having practical image characteristics and electrophotographic characteristics to some extent. However, in products that require a relatively thick deposited film with a large area, such as an electrophotographic photoreceptor, there is a demand for how uniform the electrophotographic characteristics of the deposited film to be formed can be. With colorization, in addition to this, a deposited film with higher image quality and minimal image defects has been required. For this reason, the apparatus configuration and the layer configuration are diversified, and the formation of a higher quality deposited film is required.

  However, in these conventional deposited film forming apparatuses described above, when manufacturing a product requiring a relatively large area and a thick deposited film, such as an electrophotographic photoreceptor, electrophotography is also used in order to increase production efficiency. There is a need for a system for vacuum-transporting a cylindrical substrate for a photoreceptor. In order to transport the cylindrical substrate, the cylindrical substrate holder is set in a cylindrical substrate holder, and the set cylindrical substrate holder is chucked by a conveyor configured to be capable of vacuum conveyance and stored in the vacuum conveyor. Move to the deposited film forming apparatus, dock the vacuum transfer machine to the deposited film forming apparatus, and set the cylindrical substrate holder stored in the vacuum carried machine in the deposited film forming apparatus.

  When setting such a cylindrical substrate to the cylindrical substrate holder, the cylindrical substrate holder is manually inserted into and mounted on the cylindrical substrate in a clean environment such as a clean room. In this case, the dust is generated due to friction between the cylindrical substrate holder and the cylindrical substrate, or when the cylindrical substrate holder with the cylindrical substrate is caused to generate dust due to vibration or the like when being transported in vacuum. In some cases, the deposited film grows abnormally on the surface of the cylindrical substrate before the film is formed, and can cause image defect deterioration.

  After the deposited film is formed, a film deposited other than the cylindrical substrate is subjected to a cleaning process in preparation for the next deposited film formation. In the deposited film forming apparatus, instead of the cylindrical substrate holder used for forming the deposited film, a support member having the same shape is installed in the deposited film forming apparatus to clean the inside of the deposited film forming apparatus. On the other hand, the cylindrical substrate holder used for forming the deposited film is subjected to a cleaning process for removing the deposited film on the surface by a sandblast process or the like. In this blasting treatment, blasting is performed with glass beads or the like, and the cylindrical substrate holder after the treatment is washed with water and dried to be used again as a cylindrical substrate holder for forming a deposited film. At this time, glass fragments or aluminum pieces that could not be removed by washing or the like were sometimes dropped due to vibration or rubbing during substrate setting and adhered to the cylindrical substrate surface. As a result, abnormal growth of the deposited film starting from them may be caused, which may be a cause of image defect deterioration.

  Therefore, the present invention suppresses human dust generation when assembling a cylindrical substrate, reduces the sandblasting area, and reduces vibrations during vacuum transfer, thereby causing a deposited film that is one of the causes of image defects. An object of the present invention is to provide a transfer apparatus, a deposited film forming apparatus, and a deposited film forming method capable of reducing abnormal growth of the film.

In order to achieve the above object, a vacuum transfer apparatus and method and a deposited film forming apparatus and method of the present invention include:
Means for storing the cylindrical substrate in a depressurized transfer container, means for evacuating the stored transfer container, means for moving the transfer machine equipped with the transfer container onto the deposited film forming apparatus, stored in the transfer container The vacuum transfer apparatus having means for installing the cylindrical substrate in the deposited film forming apparatus is characterized in that the transfer container has a first arm and a second arm whose interval is variable.

  Means for placing a cylindrical auxiliary member on the same axis as the cylindrical base, and means for storing the cylindrical base in a transport container that can be depressurized by a first arm and a second arm having a variable interval in the transport container. , Means for evacuating the stored transfer container, means for moving the transfer machine provided with the transfer container onto the deposition film forming apparatus, and installing the cylindrical substrate stored in the transfer container in the deposition film forming apparatus Means for rotating a cylindrical substrate installed in the deposited film forming apparatus, means for introducing a source gas into the deposited film forming apparatus from a plurality of source gas introduction pipes, and deposited film formation The apparatus has means for exhausting the inside of the apparatus, means for heating the cylindrical substrate, means for exciting the source gas by discharge energy, and means for forming a deposited film on the cylindrical substrate.

  A cylindrical auxiliary member is placed on the same axis of the cylindrical substrate, the cylindrical substrate is stored in a depressurized transfer container, the inside of the stored transfer container is evacuated, and a transfer machine equipped with the transfer container is deposited. A cylindrical substrate and a cylindrical auxiliary member placed on the same axis as a cylindrical substrate in a vacuum transfer method in which a cylindrical substrate stored in a transfer container is moved into a deposition apparatus and placed in a deposited film forming apparatus. When the cylindrical auxiliary member is stored in the transfer container by the first transfer arm in the transfer container, the cylindrical substrate is stored in the second transfer arm in the transfer container. When the cylindrical substrate is installed in the deposited film forming apparatus, the cylindrical auxiliary member is placed in the first transport in the transport container after the cylindrical substrate is installed in the deposited film forming apparatus by the second transport arm in the transport container. Cylindrical substrate in the deposited film forming apparatus by the arm , Characterized in that it is placed on the same axis.

  When storing the cylindrical substrate and the cylindrical auxiliary member placed coaxially with the cylindrical substrate in the transfer container, the cylindrical auxiliary member is stored in the transfer container by the first transfer arm in the transfer container. The cylindrical substrate is stored by the second transfer arm in the transfer container, and when the cylindrical substrate is installed in the deposition film forming apparatus, the second transfer arm in the transfer container is used for the deposition film forming apparatus. After the cylindrical substrate is installed, a cylindrical auxiliary member is placed in the deposited film forming apparatus by using a vacuum conveying method in which the cylindrical auxiliary member is placed coaxially with the cylindrical substrate in the deposited film forming apparatus by the first transfer arm in the transfer container. The cylindrical substrate can be rotated, the cylindrical support can be rotated, the source gas is introduced into the deposited film forming apparatus from a plurality of source gas introduction pipes, the inside of the deposited film forming apparatus is exhausted, and the cylindrical substrate is heated. The source gas is excited by discharge energy And forming a deposited film by Ma CVD method.

  It is characterized by having means for placing a cylindrical substrate on the same axis of the cylindrical support member, and means for placing a cylindrical auxiliary member on the same axis of the cylindrical substrate.

  Means for placing the cylindrical base on the same axis of the cylindrical support member, means for placing the cylindrical auxiliary member on the same axis of the cylindrical base, and the first arm in the transport container and the interval of the cylindrical base are variable. Means for storing in a transport container that can be depressurized by the second arm, means for evacuating the stored transport container, means for moving a transport machine equipped with the transport container onto the deposited film forming apparatus, transport container A means for rotating the cylindrical substrate installed in the deposition film forming apparatus, a plurality of source gas introduction pipes using a vacuum transfer device having a means for installing the cylindrical substrate stored in the deposition film forming apparatus; , Means for introducing the source gas into the deposited film forming apparatus, means for exhausting the inside of the deposited film forming apparatus, means for heating the cylindrical substrate, means for exciting the source gas with discharge energy, and forming a deposited film on the cylindrical substrate Characterized by having means To.

  A cylindrical base and a cylindrical auxiliary member are placed in this order on the same axis of the cylindrical support member, the cylindrical base is stored in a transport container that can be depressurized, and the stored transport container is evacuated and transported. In a vacuum transfer method in which a transporting machine having a cylindrical structure is moved onto a deposition film forming apparatus, and a cylindrical substrate stored in a transport container is installed in the deposition film forming apparatus, the cylindrical support is coaxial with a cylindrical support member. When the cylindrical support member, the cylindrical base member, and the cylindrical auxiliary member that are placed in the order of the cylindrical auxiliary member are stored in the transfer container, the cylindrical support is provided by the first transfer arm in the transfer container. After the member is stored in the transfer container, the cylindrical substrate and the cylindrical support member are stored by the second transfer arm in the transfer container. When the cylindrical substrate is installed in the deposition film forming apparatus, the second transfer arm in the transfer container is used. Deposited film forming equipment by the transfer arm Characterized in that it placed on the cylindrical substrate and the cylindrical support member disposed after the cylindrical auxiliary member the first cylindrical body coaxially deposited film forming the device by the transfer arm of the transfer machine to.

  When storing the cylindrical upper support member, the cylindrical base member, and the cylindrical auxiliary member on the same axis of the cylindrical support member in the order of the cylindrical base member and the cylindrical auxiliary member, After the cylindrical auxiliary member is stored in the transfer container by the first transfer arm, the cylindrical substrate and the cylindrical support member are stored by the second transfer arm in the transfer container, and cylindrical in the deposited film forming apparatus. When the substrate is installed, the cylindrical substrate and the cylindrical support member are set in the deposited film forming apparatus by the second transfer arm in the transfer container, and then the cylindrical auxiliary member is placed in the deposited film forming apparatus by the first transfer arm in the transfer machine. Using a vacuum transfer method that is placed coaxially with the cylindrical substrate, and installed on the cylindrical substrate in the deposition film forming apparatus, the cylindrical support can be rotated, and the deposited film is formed from a plurality of source gas introduction pipes. Introduce raw material gas into the forming device And, evacuating the deposition film forming the device, heating the cylindrical substrate, and forming a deposited film by a material gas excited plasma CVD by discharge energy.

  According to the present invention, by eliminating the cylindrical substrate holder that supported the cylindrical substrate, it is possible to suppress dust generation due to contact and rubbing between the cylindrical substrate holder and the cylindrical substrate. It is possible to reduce dust such as glass beads used when blasting aluminum metal powder and cylindrical substrate holder, and it is possible to greatly reduce image defects caused by cylindrical substrate holder. It became.

  In addition, by eliminating the cylindrical substrate holder, the temperature of the cylindrical substrate has been raised indirectly by using a heater from the inner surface of the cylindrical substrate holder. However, heat transfer from the heater is eliminated by eliminating the cylindrical substrate holder. As a result, it has become possible to increase the heating rate and reduce power consumption.

  As an unexpected effect, the efficiency of heat transfer from the heater was improved. As a result, the temperature drop in the part where heat had been easily escaped was corrected. As a result, the unevenness of the electrophotographic characteristics was improved.

  Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a diagram schematically showing an example of a photoreceptor deposition manufacturing apparatus system by RF plasma CVD using an RF band high-frequency power source used in this embodiment, and includes an input area 124, a transport system 101, and a deposited film. The forming apparatus 102 is configured. The input area 124 is a so-called clean room set in a class 3 clean environment shown in JIS standard B9920 using a pre-filter and a hepa filter. Reference numeral 125 denotes a clean room wall with the outside environment. In addition, in the charging area 124, the transport container 103 is docked on the assembled cylindrical base and the cylindrical auxiliary member, so that the inside of the transport container 103 can be evacuated. A gate valve 130 to which (shown) is attached is installed.

  FIG. 2 schematically shows a mechanism for automatically assembling the cylindrical base, the cylindrical auxiliary member, and the cylindrical support member. FIG. 3 is a plan view schematically showing the movement of the transfer arm when transferring the cylindrical base and the cylindrical auxiliary member in the transfer system shown in FIG. At this time, FIG. 3 illustrates the movement of the transfer arm in a step-by-step manner. When the cylindrical substrate is stored in the transfer container, the process proceeds from Step 1 to Step 4 in sequence, and the cylindrical substrate is installed from the reaction container. In this case, it is shown that the process proceeds from Step 4 to Step 1 in reverse order from the time of storage.

  In the present invention, there is a method of storing and transporting the cylindrical base body 207 and the cylindrical auxiliary member 208 in individual transport containers, but in that case, the transport container 103 for storing each member individually is the same as the number of members. In order to install a cylindrical substrate 207 and a cylindrical auxiliary member 208, the number of units is required and the capital investment is enormous, and the transfer container 103 storing each member is docked with the deposited film forming apparatus 102, and the transfer container and The evacuation between the deposited film forming apparatuses and the installation in the deposited film forming apparatus must be repeated until the cylindrical substrate 207 and the cylindrical auxiliary member 208 are installed in the deposited film forming apparatus. Therefore, an apparatus and a method for conveying a large number of parts at the same time in the same conveyance container are optimal.

  An example of a procedure for transporting a cylindrical substrate using the deposited film forming system configured as described above and setting it in the deposited film forming apparatus and an example of a procedure for forming a deposited film using the deposited film forming apparatus will be described. .

  In FIG. 2A, the surface of the cylindrical base 207 is cleaned by a cleaning device (not shown) and carried into the clean room 124 shown in FIG. 1, and the surface is simultaneously transported from a transport means (not shown) different from the cylindrical base 207. The cylindrical auxiliary member 208 that has been subjected to the blasting process and cleaned is carried into the clean room 124 as well. The cylindrical base body 207 and the cylindrical auxiliary member 208 are transported to the assembly position by a transport mechanism (not shown). The cylindrical base member 207 and the cylindrical auxiliary member 208 that have been transported are placed on the same axis as the cylindrical base member 207 by the automatic assembling apparatus 213. The automatic assembly device 213 (a) includes a base 216, a lifting column 217, an arm 214, and a chuck 215. As a procedure for assembling the holder, first, the lifting column 217 and the arm 214 are driven to move the chuck 215 onto the cylindrical auxiliary member 208, and the inner surface of the cylindrical auxiliary member 208 is chucked and raised. Next, the lifting column 217 and the arm 214 are similarly driven, and the cylindrical auxiliary member 208 chucked by the chuck 215 is moved to the same axis as the cylindrical base 207 and placed on the cylindrical base 207. Next, the assembled substrate is moved by a moving mechanism (not shown) to a position for storing in the transfer machine. The preparation for storing the cylindrical substrate and the cylindrical auxiliary member in the transfer container is thus completed.

Next, a procedure for storing the assembled substrate in the transfer container 103 will be described with reference to FIG. In FIG. 3, a first arm 302 and a second arm 303 are provided in the transport container 301. First, the inside of the transfer container 301 is returned to atmospheric pressure with an inert gas such as N ₂ for leakage, and the gate valve 305 is opened.

  Next, the transfer container 301 is lowered and the gate valve 305 and the gate valve 130 shown in FIG. 1 are docked. After the gate valve 130 shown in FIG. 1 is opened after docking, in Step 1, the second arm 303 opens to the left and right to secure a trajectory for the first arm 302 to descend.

  Next, the first arm 302 is lowered to chuck the cylindrical auxiliary member 308. In Step 2, the cylindrical auxiliary member 302 chucked by the first arm is pulled up into the transport container 301. In Step 3, when the cylindrical auxiliary member 308 is completely pulled up, the second arm 303 that has been opened to the left and right is closed and lowered to chuck the inner surface of the cylindrical base body 307. In Step 4, the chucked cylindrical base body 307 is pulled up into the transport container 301 to complete the storage, and the storage Step ends.

  Thereafter, the gate valve 305 shown in FIG. 1 is closed while the gate valve 305 is open, and the inside of the transfer container 301 in which the substrate is stored is pulled up to a vacuum by a vacuum exhaust line and an exhaust device (not shown). After the vacuum is pulled up, the gate valve 305 is closed to complete the vacuum holding. Thereafter, the space between the gate valve 305 and the gate valve 130 shown in FIG. 1 is opened to the atmosphere, and then the gate valve 305 and the gate valve 130 shown in FIG.

  The cylindrical substrate 307 and the cylindrical auxiliary member 308 that can be transferred are moved onto the deposited film forming apparatus 102 by the transfer system 101. At this time, the inside of the reaction vessel 113 is evacuated to a vacuum using an exhaust device (not shown) provided in the deposited film forming apparatus 102. The transferred transport container 103 is lowered to the gate valve 111 provided on the deposited film forming apparatus 102 and docked. After docking, the gate valve 105 of the transfer container and the gate valve 111 of the deposited film forming apparatus are evacuated by an exhaust pump (not shown) that exhausts between the gates. The gate valve 105 and the gate valve 111 are opened when the transfer container 103 and the gate valves 105 and 111 and the reaction container 113 all have the same pressure.

  Next, the substrate is placed on a cradle 116 in the deposited film forming apparatus 102. As the installation procedure of the cylindrical substrate 307 and the cylindrical auxiliary member 308 at this time, the step progression (Step 1 → Step 4) opposite to the step progression (Step 1 → Step 4) when the cylindrical substrate 307 and the cylindrical auxiliary member 308 shown above are pulled up is performed. → In Step 1), the cradle 116 is installed in the reverse operation. When the cylindrical base 307 and the cylindrical auxiliary member 308 are installed, the first and second arms are stored in the transfer container, and after the gate valves 105 and 111 are closed, the gate valves 105 and 111 are returned to atmospheric pressure, The deposited film forming apparatus 102 and the transfer container 103 are separated. The cylindrical bases 307 and 207 and the cylindrical auxiliary members 308 and 207 are thus completely installed in the deposited film forming apparatus.

  1 includes a gate valve 111, an upper insulator 112, a reaction vessel 113, a lower insulator 114, a plurality of source gas introduction pipes 120, a base plate 115, an exhaust line 121, a high frequency power source 123, a matching box. 122, a cylindrical substrate mounting table 116, a cylindrical substrate 117, and a cylindrical auxiliary member 118 are carried into the reaction vessel 113 by the transfer system 101.

  A plurality of source gas introduction pipes 120 are installed in the reaction vessel 113. The plurality of source gas introduction pipes 120 are disposed between the cylindrical substrate 117 and the side wall of the reaction vessel 113, and on one circumference that is substantially concentric with the outer peripheral surface of the cylindrical substrate 112, the cylindrical substrate 117. It is arranged so as to surround. The plurality of source gas introduction pipes 120 are provided with mixing (not shown) with a mass flow controller (not shown) for adjusting the flow rate of the source gas, and a source gas inflow valve (not shown).

  The source gas is blown out in a tangential direction with respect to the inner wall of the reaction vessel 113. The number of holes to be blown out is not particularly limited, but two directions which are both tangential directions are optimal. A high frequency power source 123 is connected to the side wall of the reaction vessel 113 via a high frequency matching box 122.

  Further, at the lower part of the reaction vessel 113, a motor for rotating the cylindrical substrate 117 can rotate the cylindrical substrate 117 via a cylindrical substrate mounting table 116 via a power transmission system (not shown).

  An exhaust port 121 is connected to the reaction vessel 113. This exhaust port communicates with an exhaust device (not shown) and is configured to maintain a constant pressure in the reaction vessel 113 while looking at a pressure detector (not shown) such as Baratron.

  The reaction vessel 113 is insulated from the reaction vessel 113 and the ground by the upper insulator 112 and the lower insulator 114.

  The cylindrical substrate 117 may be any material having a material corresponding to the purpose of use. As the material of the cylindrical substrate 117, for example, copper, aluminum, gold, silver, platinum, lead, nickel, cobalt, iron, chromium, molybdenum, titanium, stainless steel, and the like are preferable because of their good electrical conductivity. However, aluminum is optimal in consideration of workability and manufacturing cost. Moreover, as aluminum which forms the cylindrical base | substrate 117, it is preferable to use either an Al-Mg type alloy or an A-Mn type alloy, for example.

  The heating heater 129 is provided inside the cylindrical base body 117. The heating heater 129 may be a heating element that can be used in a vacuum. Specifically, an electric resistance heating element such as a sheath heater, a plate heater, a ceramic heater, a carbon heater, a halogen lamp, an infrared lamp, or the like. Examples of the heat radiation lamp heating element such as a heat radiation lamp and the like, and a heating element by heat exchange means using a liquid, gas, or the like as a heat medium, are examples. As the surface material of the heater 129, metals such as stainless steel, nickel, aluminum, and copper, ceramics, heat resistant polymer resins, and the like can be used.

  An example of a procedure of a method for forming a deposited film using the deposited film forming apparatus configured as described above will be described below.

  First, the inside of the reaction vessel 113 is exhausted by an exhaust device (not shown). Subsequently, a source gas necessary for heating the cylindrical substrate 117, for example, a gas such as Ar or He, is supplied into the reaction vessel 113 via a plurality of source gas introduction pipes 120, and the reaction vessel 113 is filled with an exhaust device. Is adjusted to a predetermined pressure while looking at the pressure detector 128. Next, after reaching a predetermined pressure, the heater 129 is energized, and the temperature of the cylindrical substrate 113 is set to about 200 [° C.] to 450 [° C.], more preferably 250 by a temperature controller (not shown). Control to a desired temperature of about [° C.] to 350 [° C.].

  After the preparation for forming the deposited film is completed by the above procedure, a photoconductive layer is formed on the cylindrical substrate 117. That is, the source gas for heating and the source gas for forming the deposited film are exchanged via mixing (not shown), and the source gas for forming the deposited film is adjusted to have a desired flow rate. Next, the exhaust device is adjusted while checking the pressure detector 128 so that the inside of the reaction vessel 113 has a desired pressure of about 13.3 [mPa] to 1330 [Pa].

  After the pressure in the reaction vessel 113 is stabilized, the high frequency power source 123 is set to a desired power, and the high frequency power is supplied to the reaction vessel via the high frequency matching box 122 using, for example, an RF power source having a frequency of 13.56 [MHz]. By supplying to 113, a high frequency glow discharge is caused.

  By this discharge energy, the raw material gas introduced into the reaction vessel 113 is decomposed, and a deposited film containing a desired silicon atom as a main component is formed on the cylindrical substrate 117.

  In order to form a uniform deposited film, at the same time as the deposited film is formed, or at the stage where the cylindrical substrate 117 is heated, a motor (not shown) is rotated to about 1 [rpm] to 10 [rpm], For example, it is rotated at a rotational speed of 1 [rpm]. By doing so, a uniform deposited film is formed in the circumferential direction of the cylindrical substrate 117.

Next, after the deposited film is formed, the supply of the source gas and the high frequency power is stopped, and the inside of the reaction vessel 113 is exhausted. Thereafter, the inside of the reaction vessel 113 and the plurality of source gas introduction pipes 120 is purged using a purge gas, for example, at least one of an inert gas such as Ar and N ₂ . After the purge process is completed, the cylindrical substrate 117 and the cylindrical auxiliary member 118 are taken out from the reaction container 113 using the transport container 104 having the same configuration as the transport container 103.

As a procedure for taking out the cylindrical substrate 117 and the cylindrical auxiliary member 118 in the transfer container 104, the transfer container 104 is moved onto the deposited film forming apparatus 102 by the transfer system 101. At this time, the inside of the transfer container 104 is evacuated and held in advance in another place. The transferred transport container 104 is lowered to the gate valve 111 provided on the deposited film forming apparatus 102 and docked. After docking, the gate valve 105 of the transfer container and the gate valve 111 of the deposited film forming apparatus are evacuated by an exhaust pump (not shown) that exhausts between the gates. When the transfer container 104 and the gate valves 105 and 111 and the reaction container 113 are all at the same pressure, the gate valve 105 and the gate valve 111 are opened. Thereafter, the cylindrical base 117 and the cylindrical auxiliary member 118 are taken out in the advancing direction from Step 1 to Step 4 shown in FIG. After the storage, after the gate valves 105 and 111 are closed, the pressure between the gate valves 105 and 111 is returned to the atmospheric pressure, the deposited film forming apparatus 102 and the transfer container 104 are separated, and the cylindrical substrate 117 and the cylindrical shape are separated from the deposited film forming apparatus 102. The auxiliary member 118 is taken out. The cylindrical base member 117 and the cylindrical auxiliary member 118 thus taken out are transported by the transport system 101 to a predetermined discharge table (not shown). Thereafter, the inside of the transfer container 104 is returned to the atmosphere by an inert gas such as N ₂ and the gate valve 105 is opened. The cylindrical base member 117 and the cylindrical auxiliary member 118 housed in the reaction vessel 104 opened to the atmosphere are installed on the discharge table by the step 4 → 1 progression method shown in FIG. When the cylindrical base 117 and the cylindrical auxiliary member 118 are installed, the first and second arms are stored in the transfer container, and the discharge of the cylindrical base 117 and the cylindrical auxiliary member 118 is completed.

  Next, the deposited by-product such as polysilane is subjected to a cleaning process. As a procedure at that time, a carrier 104 for which the cylindrical base 117 and the cylindrical auxiliary member 118 have been discharged is used, and a cleaning support base (not shown) having the same shape as the cylindrical base 117 and the cylindrical auxiliary member 118 is used. ) In the deposited film forming apparatus 102. As an installation procedure, the supporting substrate for cleaning is stored in the transport containers 104 and 301 in the procedure of Step 1 to Step 4 in FIG. After storage, the gate valves 105 and 305 are closed, and the inside of the transfer containers 104 and 301 is moved to the deposited film forming apparatus 102 by the transfer system 101 to the deposited film forming apparatus 102 while maintaining the atmospheric pressure. After the movement, it is lowered to the gate valve 111 provided on the deposited film forming apparatus 102 and docked. After docking, only the gate valves 105 and 305 of the transfer container are opened, and the gate valve 111 of the deposited film forming apparatus is evacuated by an exhaust pump (not shown) that exhausts between the gates. The gate valve 111 is opened when the inside of the transfer container 104 and the reaction container 113 becomes the same pressure. After that, the cleaning support substrate is set in the procedure of Step 4 → Step 1 shown in FIG. After installation, the first and second arms in the transfer container 104 are stored in the transfer container, and after the gate valves 105 and 111 are closed, the pressure between the gate valves 105 and 111 is returned to atmospheric pressure, and the deposited film forming apparatus 102 and The transfer container 103 is separated, and the installation of the cleaning support substrate in the deposited film forming apparatus is completed.

  Next, the inside of the reaction vessel 113 is evacuated by an exhaust device (not shown), the raw material gas necessary for the cleaning process in the reaction vessel 113 is supplied via a plurality of raw material gas introduction pipes 120, and the reaction is performed using the exhaust device (not shown). The inside of the container 113 is adjusted while looking at the pressure detector 128 so as to become a predetermined pressure. After the pressure in the reaction vessel 113 is stabilized, the high frequency power source 123 is set to a desired power, and the high frequency power is supplied to the reaction vessel via the high frequency matching box 122 using, for example, an RF power source having a frequency of 13.56 [MHz]. The high frequency glow discharge is caused to be supplied to 113. With this discharge energy, the cleaning source gas introduced into the reaction vessel 113 is decomposed and the inside of the reaction vessel 113 is cleaned.

Next, the supply of high-frequency power is stopped after the cleaning process, and the reaction vessel 113 is exhausted by an exhaust device (not shown). Thereafter, the inside of the reaction vessel 113 and the source gas introduction pipe 120 is purged using a purge gas, for example, at least one of an inert gas such as Ar and N ₂ . After completion of the purging process, the cleaning support substrate is transferred to the carrier by a method similar to the procedure for removing the cylindrical substrate 117 and the cylindrical auxiliary member 118 after the deposition film formation is completed using the transfer container 104. It is taken out from the deposited film forming apparatus 101 by 104. The taken-out cleaning support substrate is transported and installed at the cleaning support substrate installation location.

  In the present embodiment, the blowing direction of the source gas is blown tangential to the inner wall of the reaction vessel 113. The number of holes to be blown out is not particularly limited, but two directions which are both tangential directions are effective.

  This is considered as follows. In particular, when the supply amount of source gas is constant and the number of source gas introduction pipes is reduced, or when the number of source gas introduction pipes is the same and the supply amount of source gas is increased, the amount of source gas supplied to the source gas introduction pipe is reduced. The blowing pressure increases. In that case, if the blowing direction of the source gas is directed to the cylindrical substrate side, dust or the like is blown directly onto the cylindrical substrate from the source gas introduction pipe, or conversely, the reaction is caused if the blowing direction of the source gas is directed to the reaction vessel side. When dust or the like is wound up from the inner wall of the container, both may adhere to the cylindrical substrate and cause abnormal growth of the deposited film. Therefore, it is considered that the abnormal growth of the deposited film can be suppressed by setting the blowing direction of the source gas to the tangential direction of the reaction vessel regardless of the number of source gas introduction pipes and the supply amount of the source gas.

(Second Embodiment)
FIG. 4 shows an example of the movement of the transfer arm in the transfer system in the case where the cylindrical support member 409 is provided on the lower side of the cylindrical base and coaxial with the cylindrical base. At this time, when the cylindrical substrate is stored in the transfer container in FIG. 4, the process proceeds from Step 1 to Step 4 in order, and when the cylindrical substrate is installed from the reaction container, Step 1 is sequentially performed from Step 4 contrary to the storage. Show that you are going to go.

  The advantage of using this embodiment is that the cylinder provided in the reaction vessel 113 of the deposited film forming apparatus 102 in FIG. 1 once even when the outer diameter or length of the cylindrical substrate 407 is changed. Although it is necessary to change the shape of the cylindrical substrate support 116 to a shape in which the cylindrical support member 409 can be installed, only the shape of the cylindrical support member 409 is changed thereafter, and the outer diameter of the cylindrical substrate 407 is affected. First, there is an advantage that it is not necessary to disassemble and replace the cylindrical substrate cradle 116 provided in the deposited film forming apparatus every time the shape of the cylindrical substrate 407 is changed.

  The difference between the second embodiment and the first embodiment is that the second arm does not hold only the cylindrical base 407 but also holds the cylindrical support member 409 at the bottom of the cylindrical base 407 at the same time. 407 is a point that can be conveyed.

  In FIG. 2B, as a procedure for automatically assembling the cylindrical base 207, the cylindrical auxiliary member 208, and the cylindrical support member 209, the cylindrical auxiliary member 208 is placed coaxially with the cylindrical base 207. The procedure to do is the same as in the first embodiment, but in the second embodiment, before the cylindrical auxiliary member 208 is placed on the same axis as the cylindrical base body 207, the cylindrical support member 209 is arranged on the same axis. A step of mounting the substrate 207 is incorporated. Other configurations and the deposited film forming method when these apparatuses are used are the same.

(Third embodiment)
FIG. 7 schematically shows the movement of the transfer arm in the transfer system in which the cylindrical substrates 707-1 and 707-2 are stacked as an example of stacking cylindrical substrates. In this case, when the cylindrical bases are stacked, an unstable state is likely to be caused. The cylindrical support member 709 shown in the second embodiment was installed.

  As a procedure for automatically assembling the cylindrical base body 207-1, the core 219, the cylindrical base body 207-2, the cylindrical auxiliary member 208, and the cylindrical support member 209 in FIG. The cylindrical base 207-2 is placed on the same axis as the cylindrical support member 209, and then the core 219 is inserted on the inner face of the cylindrical base 207-2 on the same axis as the cylindrical base 207-2. Then, the cylindrical base member 207-1 is placed on the cylindrical base member 207-2 so as to be inserted into the core 210 on the same axis as the cylindrical shape 207-2, and then the cylindrical auxiliary member 208 is placed on the cylindrical base member 207-. 1 is placed on the same axis and the assembly is completed.

  In this embodiment, since two cylindrical substrates are stacked vertically, the deposition film forming apparatus 102 in FIG. 1 has longer components such as the reaction vessel 113, the source gas introduction pipe 120, the heater 129, etc. Other than this, the basic configuration and the deposited film forming method are the same as those in the second embodiment.

In each of the above embodiments, the source gas used when forming the deposited film is silane (SiH ₄ ), disilane (Si ₂ H ₆ ), silicon tetrafluoride (SiF ₄ ), or disilicon hexafluoride (Si _2). It is also effective to use a raw material gas for forming amorphous silicon such as F ₆ ) or a mixed gas thereof. It is effective to use hydrogen (H ₂ ), argon (Ar), helium (He) or the like as the dilution gas. Further, as a characteristic improving gas for changing the band gap width of the deposited film, a gas containing nitrogen atoms such as nitrogen (N ₂ ), ammonia (NH ₃ ), oxygen (O ₂ ), nitrogen monoxide (NO), Nitrogen dioxide (NO ₂ ), dinitrogen oxide (N ₂ O), carbon monoxide (CO), carbon dioxide (CO ₂ ) and other oxygen atoms, methane (CH ₄ ), ethane (C ₂ H ₆ ), Fluorine compounds such as hydrocarbons such as ethylene (C ₂ H ₄ ), acetylene (C ₂ H ₂ ), propane (C ₃ H ₈ ), germanium tetrafluoride (GeF ₄ ), and nitrogen fluoride (NF ₃ ), or these It is also effective to use a mixed gas of

For the purpose of doping treatment, it is also effective to introduce a dopant gas such as diborane (B ₂ H ₆ ), boron fluoride (BF ₃ ), or phosphine (PH ₃ ) into the discharge space at the same time.

Examples of the cleaning gas used during the cleaning process include CF ₄ , CF ₄ / O ₂ , SF ₆ , and ClF ₃ (chlorine trifluoride). In this embodiment, the cleaning time is shortened. Effective ClF ₃ (chlorine trifluoride) is used. In the present embodiment, it is effective to adjust the concentration by using an inert gas for dilution in order to adjust the concentration of the cleaning gas. As the inert gas to be introduced, for example, He , Ne, and Ar, and Ar is preferably used.

  According to the deposited film forming apparatus and method of the present invention configured as described above, the conventionally used substrate holder is eliminated, and the cylindrical substrate can be transported with the minimum number of components. When the deposited film is formed on the cylindrical substrate, it is possible to reduce the influence of dust or the like that causes abnormal growth of the deposited film, and as a result, it is possible to form a high-quality deposited film with few image results. became.

  Hereinafter, the present invention will be described in more detail with reference to experimental examples and examples.

Example 1
In this embodiment, the automatic assembling apparatus shown in FIG. 2A is used, and after the cylindrical substrate 207 and the cylindrical auxiliary member 208 are assembled on the same axis, the means for storing them in the transport container shown in FIG. 3 is used. The cylindrical base 207 and the cylindrical auxiliary member 208 are stored in the transfer container 103 in the transfer system 101 shown in FIG. 1 and installed in the deposited film forming apparatus 102. The diameter of the aluminum is 80 mm, the length is 358 mm, On the cylindrical substrate 117 having a thickness of 3 mm, an amorphous silicon deposited film (hereinafter abbreviated as an electrophotographic photosensitive member) having a layer structure shown in FIG. 8 was formed under the conditions shown in Table 1. In FIG. 8, reference numeral 801 denotes a cylindrical substrate, reference numeral 802 denotes a lower blocking layer (first layer), reference numeral 803 denotes a first photoconductive layer (second layer), and reference numeral 804 denotes a second photoconductive layer ( Reference numeral 805 denotes a surface layer (fourth layer).

  In each of the following examples and comparative examples, an electrophotographic photosensitive member was formed.

  Table 2 shows the results of a series of evaluations on the electrophotographic photosensitive member produced in this example.

(Example 2)
In the present embodiment, the automatic assembly apparatus shown in FIG. 2B is used, and after the cylindrical substrate 207, the cylindrical auxiliary member 208, and the cylindrical support member 209 are assembled on the same axis, the inside of the transfer container 401 shown in FIG. 1 is used to store the cylindrical substrate 207, the cylindrical auxiliary member 208, and the cylindrical support member 209 in the transfer container 403, and in the deposited film forming apparatus 102 in the transfer system 101 shown in FIG. Then, an electrophotographic photosensitive member was formed by the same method as in Example 1 using the same aluminum substrate as in Example 1. Table 2 shows the results of a series of evaluations performed on the electrophotographic photosensitive member produced in this example together with Example 1.

(Comparative Example 1)
In this comparative example, the base holder and the cylindrical base are assembled by manual work, and the cylindrical base and the cylindrical auxiliary member are mounted on the substrate holder using the means for storing in the transport container shown in FIG. The electrophotographic photosensitive member is stored in the same manner as in Example 1 except that the conventional conveyance system in which the cylindrical substrate is installed in the deposited film forming apparatus is used by using the conveyance system 101 shown in FIG. Was prepared and evaluated in the same manner as in Example 1.

(Comparative Example 2)
In this comparative example, the cylindrical base body 207 and the cylindrical auxiliary member 208 shown in the first embodiment are stored in the transfer container 103-1 for storing the cylindrical base body 207 and the cylindrical auxiliary member 208 as shown in FIG. The electrophotographic photosensitive member was formed in the same manner as in Example 1 except that the transfer was carried out by a transfer system having a transfer container 103-2 and a transfer container separately stored. However, in FIG. 10, the transport container 103-1 of the cylindrical base 207 and the transport container 103-2 of the cylindrical auxiliary member are configured to be rotatable. Using the above transport system, an electrophotographic photosensitive member was prepared in the same manner as in Example 1, and the following series of evaluations were performed. The results are shown together with Example 1.

(Example 3)
In this embodiment, after the two cylindrical substrates 207-1 and 207-2, the cylindrical auxiliary member 208, the core 219, and the cylindrical support member 209 are assembled using the automatic assembly apparatus shown in FIG. The cylindrical bases 207-1 and 207-2, the cylindrical auxiliary member 208, the core 219, and the cylindrical support member using the transfer system 101 shown in FIG. 209 was stored in a transfer container, installed in the deposited film forming apparatus 102, and an electrophotographic photosensitive member was formed in the same manner as in Example 1.

  However, since the transport container used for transport and the deposited film forming apparatus used for forming the electrophotographic photosensitive member are stacked with a cylindrical substrate, the deposited film formation shown in FIG. 1 is used except that components extending in the longitudinal direction are used. An electrophotographic photosensitive member was formed by the same method as the apparatus.

Example 4
In the present embodiment, the apparatus 501 except that the apparatus 501 in which the reaction gas exhaust means is formed on the side surface of the reaction vessel as shown in FIG. 5 is used for the film formation apparatus 102 of the system for forming a film shown in FIG. After the cylindrical substrate 207 and the cylindrical auxiliary member 208 are assembled on the same axis using the automatic assembly apparatus shown in (a), the unit 101 shown in FIG. 1 is stored using means for storing in the transfer container 301 shown in FIG. In the transfer system, the cylindrical substrate 207 and the cylindrical auxiliary member 208 were stored in the transfer container 301 and installed in the deposited film forming apparatus 501, and the same aluminum substrate as in Example 1 was used.

(Evaluation method of electrophotographic characteristics)
FIG. 9 shows a schematic diagram of a copying machine for evaluating the characteristics of an electrophotographic photosensitive member. In FIG. 9, there are a main charger 902, a potential sensor 903, a developing device 904, a transfer charger 905 (a), a separation charger 905 (b), and a cleaning roller 906 around the electrophotographic photosensitive member 901 that rotates clockwise. In addition, a cleaner 910 having a cleaning blade 907, a pre-exposure 908, and the like are disposed. The latent image forming exposure 900 is provided between the main charger 902 and the potential sensor 903.

  When measuring the characteristics of the electrophotographic photosensitive member, the developing device 904 and the cleaner 910 are removed, and a potential probe (not shown) capable of measuring the axial and circumferential electrophotographic properties of the electrophotographic photosensitive member instead of the developing device 904. And measure the electrophotographic characteristics of the electrophotographic photosensitive member. Further, at the time of image formation, the potential probe is removed and the developing device 904 and the cleaner 910 are attached to perform image formation.

  The electrophotographic characteristics and images were evaluated using the electrophotographic process configured as described above according to the following criteria.

・ Evaluation of “Vd-axis unevenness / Vd circumferential unevenness” The circumferential direction when the electrophotographic photosensitive member is rotated several times under the conditions of a process speed of 265 mm / sec, pre-exposure (LED with a wavelength of 680 nm) and a light amount of 4 μJ / cm ² . After measuring the potential and adjusting the current value of the charger so that the average value of the circumferential potential of the surface potential at the middle position in the axial method of the electrophotographic photosensitive member is 450 V (dark potential), the measuring probe is electrophotographic photosensitive. The average value of the circumferential potential was measured at five points similarly to the middle position in the axial direction from the end of the body, and the maximum value-minimum value of the five points was evaluated as Vd axis unevenness. At the same time, the maximum value-minimum value of the circumferential potential measured at each point was regarded as the unevenness in the circumferential direction, and the maximum value of the circumferential unevenness at each point was evaluated as the unevenness in the Vd circumferential direction.

However, at this time, relative evaluation was performed with the result created in Comparative Example 1 as 100%.
◎ 70% or less ○ ・ ・ ・ 70-80%
△ 80-100%

Evaluation of “Vh-axis unevenness / Vh circumferential unevenness” The average value of the circumferential potential of the surface potential at the middle position in the axial method of the electrophotographic photosensitive member is 450 V (dark potential) in the same procedure as the above-described Vd-axis unevenness. After adjusting the current value of the charger, image exposure (laser with a wavelength of 660 nm) is irradiated to adjust the amount of light of the image exposure light source so that the average value of the surface potential in the circumferential direction becomes 200 V (bright potential). After that, the measurement probe measured the average value of the circumferential potential at five points from the end of the electrophotographic photosensitive member in the axial direction in the same manner as the middle position. As evaluated.

  At the same time, the maximum value-minimum value of the circumferential potential measured at each point was set as the unevenness in the circumferential direction, and the maximum value of the unevenness in the circumferential direction at each point was evaluated as the unevenness in the Vh circumferential direction.

However, at this time, relative evaluation was performed with the result created in Comparative Example 1 being 100%.
◎ 70% or less ○ ・ ・ ・ 70-80%
△ 80-100%

・ Evaluation of “Vl axis unevenness / Vl circumferential unevenness” The average value of the circumferential potential of the surface potential at the middle position in the axial method of the electrophotographic photosensitive member becomes 450 V (dark potential) by the same procedure as the above Vh axis unevenness. After adjusting the current value of the charger, the image exposure (laser with a wavelength of 660 nm) is irradiated to adjust the amount of light of the image exposure light source so that the average value of the circumferential potential of the surface potential becomes 50 V (bright potential). After that, the measurement probe measured the average value of the circumferential potential at five points in the same way as the middle position from the end of the electrophotographic photosensitive member in the axial direction. As evaluated.

  At the same time, the maximum value-minimum value of the circumferential potential measured at each point was regarded as the unevenness in the circumferential direction, and the maximum value of the circumferential unevenness at each point was evaluated as the Vl circumferential unevenness, and the following criteria were evaluated.

However, at this time, relative evaluation was performed with the result created in Comparative Example 1 being 100%.
◎ 70% or less ○ ・ ・ ・ 70-80%
△ 80-100%

(Evaluation method of image characteristics)
・ Evaluation of “Image Defect” Using the schematic diagram of the copying machine shown in FIG. 9, an image obtained by copying a solid black document of A3 size by installing the developing unit 904, the cleaner 910, and the electrophotographic photosensitive member prepared is used. Observing and counting the number of white spots with a diameter of 0.10 mm or more per round of the electrophotographic photosensitive member, the obtained results are ranked by relative comparison when the value in Comparative Example 1 is 100%. I did.
☆ ... 0% or more and less than 20% ◎ ... 20% or more and less than 50% ○ ... 50% or more and less than 80% △ ... 80% or more and less than 105% × ... 105% or more

(Comprehensive evaluation)
☆ ・ ・ ・ Excellent ◎ ・ ・ ・ Very good ○ ・ ・ ・ Good

  As apparent from Table 2, good results were obtained in any case where the number of cylindrical substrates and the apparatus configuration were changed.

-Tact time From the time when the process of storing the cylindrical substrate and the cylindrical auxiliary member shown in Example 1 into the transport container is started, the tact time until the electrophotographic photosensitive member is created and discharged is set to 100 Similarly, the results of relative evaluation of the time until the electrophotographic photosensitive member was prepared and discharged are shown.

Investment Cost The result of relative evaluation of the investment cost required when parts are individually conveyed as shown in Comparative Example 2 when the investment cost required when creating the apparatus shown in Example 1 is 100 is shown.

・ Comprehensive evaluation Comprehensive evaluation was performed according to the following criteria.
Can be created at low cost and has excellent mass productivity ...
High cost and unsuitable for mass production

  As is apparent from Table 3, when each member is individually conveyed, the tact time is greatly extended and the investment cost is increased.

It is the figure which showed typically the structure of the deposited film formation system in the 1st Embodiment of this invention. It is the figure which showed typically the apparatus structure which assembles a cylindrical base | substrate and a cylindrical auxiliary member in the conveyance system in the 1st Embodiment of this invention. In the transfer system according to the second embodiment of the present invention, the apparatus configuration for assembling the cylindrical auxiliary member, the cylindrical substrate, and the cylindrical support member when the cylindrical support member is provided below the cylindrical substrate is schematically shown. It is the figure shown in. In the transfer system according to the third embodiment of the present invention, a cylindrical auxiliary member, a cylindrical substrate, and a cylinder when the cylindrical substrates are stacked in two stages and a cylindrical support member is provided under the lower cylindrical substrate. It is the figure which showed typically the apparatus structure which assembles a shape support member. It is the figure which showed typically the motion of the 1st, 2nd arm of the conveyance machine of the conveyance system in the 1st Embodiment of this invention. It is the figure which showed typically the motion of the 1st, 2nd arm of the conveying machine of the conveying system in the 2nd Embodiment of this invention. It is typical sectional drawing of an example of the deposited film formation apparatus with which the exhaust means was provided in the side part of the reaction container in the 4th Embodiment of this invention. It is the figure which showed typically the motion of the arm of the conveying machine of the conventional conveying system. It is the figure which showed typically the motion of the 1st, 2nd arm of the conveying machine of the conveying system in the 3rd Embodiment of this invention. It is the figure which showed typically the layer structure of the electrophotographic photoreceptor. 2 is a schematic view of a copying machine for evaluating electrophotographic photosensitive member characteristics. FIG. It is the schematic of the conveyance system used when conveying a cylindrical auxiliary member and a cylindrical base | substrate separately.

Explanation of symbols

101 Conveying system 102 according to the present invention Deposited film forming apparatus 103, 301, 401, 601, 701 according to the present invention Cylindrical substrate carrying transport container 103-1 Conveying container 103-2 with only a cylindrical substrate Only a cylindrical auxiliary member Transport container 104-1 Discharge only cylindrical substrate after deposition film formation and discharge / carrying transport container 104-2 Only cylindrical auxiliary member after deposition film formation Discharge and cleaning cylindrical auxiliary member Transport container 104 for discharging / carrying out only Cylindrical substrate discharge and cleaning support discharge / carrying transport container 105, 130, 111, 305, 405, 511, 604, 704 after deposit film formation Gate valve 110 207-1, 207-2, 307, 407, 517, 609, 707-1, 707-2 Cylindrical substrate 1 8, 208, 308, 408, 518, 708 Cylindrical auxiliary member 209, 409, 709 Cylindrical support member 124 Input area 126 in the clean room shown in the present invention Transport rail 127 Deposited film forming apparatus installation floor 210 For cylindrical auxiliary member Transfer and installation table 211 Transfer and installation table for cylindrical substrate 212 Transfer and installation table for cylindrical support member 216 Automatic assembly device base table 218 Core transfer and installation tables 219 and 710 Cores 302, 402 and 702 First transfer arm 303, 403, 703 Second transfer arm 121, 521 Exhaust line 603 Transfer arm shown in conventional example

Claims (11)

  Means for storing the cylindrical substrate in a depressurized transfer container; means for evacuating the stored transfer container; means for moving the transfer machine equipped with the transfer container onto the deposited film forming apparatus; In the vacuum transfer apparatus having means for installing the cylindrical substrate stored in the deposition film forming apparatus, the transfer container has a first arm and a second arm whose interval is variable. A featured vacuum transfer device.   2. The vacuum transfer apparatus according to claim 1, further comprising means for mounting a cylindrical auxiliary member on the same axis of the cylindrical base.   Means for placing a cylindrical auxiliary member on the same axis of the cylindrical base, and storing the cylindrical base in a transport container that can be depressurized by a first arm in the transport container and a second arm whose interval is variable. Means for evacuating the stored transport container; means for moving a transport machine equipped with the transport container onto a deposition film forming apparatus; and depositing the cylindrical substrate stored in the transport container on the deposited film Using a vacuum transfer device provided with a means installed in the forming apparatus, a means for rotating the cylindrical substrate installed in the deposited film forming apparatus, a plurality of source gas introduction pipes, and a source gas into the deposited film forming apparatus Means for evacuating the deposited film forming apparatus, means for heating the cylindrical substrate, means for exciting the source gas with discharge energy, and means for forming a deposited film on the cylindrical substrate. Features and That the deposited film forming apparatus.   4. The deposited film forming apparatus according to claim 3, wherein the deposited film forming apparatus is an apparatus for producing an electrophotographic photosensitive member. A cylindrical auxiliary member is placed on the same axis of the cylindrical substrate, the cylindrical substrate is stored in a depressurized transfer container, the stored transfer container is evacuated, and the transfer machine includes the transfer container. In a vacuum transfer method in which the cylindrical substrate stored in the transfer container is placed in the deposited film forming apparatus.
When the cylindrical base and the cylindrical auxiliary member placed on the same axis of the cylindrical base are stored in the transfer container, the cylindrical auxiliary member is moved by the first transfer arm in the transfer container. After storing in the transfer container, the cylindrical substrate is stored by the second transfer arm in the transfer container, and when the cylindrical substrate is installed in the deposited film forming apparatus, After the cylindrical substrate is installed in the deposited film forming apparatus by the second transfer arm, the cylindrical auxiliary member is coaxially aligned with the cylindrical substrate in the deposited film forming apparatus by the first transfer arm in the transfer container. A vacuum conveying method characterized by being placed on the surface.   When the cylindrical base and the cylindrical auxiliary member placed on the same axis of the cylindrical base are stored in the transfer container, the cylindrical auxiliary member is moved by the first transfer arm in the transfer container. After storing in the transfer container, the cylindrical substrate is stored by the second transfer arm in the transfer container, and when the cylindrical substrate is installed in the deposited film forming apparatus, After the cylindrical substrate is installed in the deposited film forming apparatus by the second transfer arm, the cylindrical auxiliary member is coaxially aligned with the cylindrical substrate in the deposited film forming apparatus by the first transfer arm in the transfer container. Using a vacuum transfer method placed on the deposition film forming apparatus, placing the cylindrical substrate on the cylindrical substrate, allowing the cylindrical support to rotate, and from a plurality of source gas introduction pipes to the deposition film forming apparatus. The raw material gas is introduced into the Evacuating the Sekimaku forming the device, the cylindrical body is heated, the deposited film forming method and forming a deposited film by the excited plasma CVD method the raw material gas by the discharge energy.   2. The vacuum according to claim 1, further comprising means for placing the cylindrical substrate on the same axis as the cylindrical support member, and means for placing the cylindrical auxiliary member on the same axis as the cylindrical substrate. Conveying device.   Means for placing a cylindrical substrate on the same axis of the cylindrical support member, means for placing a cylindrical auxiliary member on the same axis of the cylindrical substrate, and a first arm and a gap in the transfer container. Means for storing in a transport container that can be depressurized by a second arm that is variable, means for evacuating the stored transport container, and transporting the transport machine equipped with the transport container onto the deposited film forming apparatus And a vacuum transfer device having means for installing the cylindrical substrate stored in the transfer container in the deposited film forming apparatus, and rotating the cylindrical substrate installed in the deposited film forming device. Means for introducing a source gas into the deposited film forming apparatus from a plurality of source gas introduction pipes, means for exhausting the inside of the deposited film forming apparatus, means for heating the cylindrical substrate, and the source gas by discharge energy. Excite Stage, the deposited film forming apparatus characterized in that it has a forming means deposited film on the cylindrical substrate on.   9. The deposited film forming apparatus according to claim 8, wherein the deposited film forming apparatus is an apparatus for producing an electrophotographic photosensitive member.   The cylindrical base member and the cylindrical auxiliary member are placed in this order on the same axis of the cylindrical support member, and the cylindrical base body is stored in a transport container that can be decompressed, and the stored transport container is evacuated. In the vacuum transfer method in which the transfer machine provided with the transfer container is moved onto the deposition film forming apparatus, and the cylindrical substrate stored in the transfer container is installed in the deposition film forming apparatus, the cylindrical shape When storing the cylindrical support member, the cylindrical base member, and the cylindrical auxiliary member in a state where the cylindrical base member and the cylindrical auxiliary member are placed in this order on the same axis of the support member in the transport container The cylindrical auxiliary member is stored in the transfer container by the first transfer arm in the transfer container, and then the cylindrical substrate and the cylindrical support member are stored in the second transfer arm in the transfer container. Together with the stack When the cylindrical substrate is installed in the film forming apparatus, the cylindrical auxiliary member is moved after the cylindrical substrate and the cylindrical support member are installed in the deposited film forming apparatus by the second transfer arm in the transfer container. A vacuum transfer method characterized in that the first transfer arm in the transfer device is placed coaxially with the cylindrical substrate in the deposited film forming apparatus.   The cylindrical support member, the cylindrical base member, and the cylindrical auxiliary member that are placed in the order of the cylindrical base member and the cylindrical auxiliary member on the same axis of the cylindrical support member are placed in the transport container. When storing, the cylindrical auxiliary member is stored in the transfer container by the first transfer arm in the transfer container, and then the cylindrical substrate and the cylindrical support member are stored in the transfer container by the second transfer arm. And when the cylindrical substrate is installed in the deposited film forming apparatus, the cylindrical substrate and the cylindrical support member are installed in the deposited film forming apparatus by the second transfer arm in the transfer container. Using the vacuum transfer method in which the cylindrical auxiliary member is placed coaxially with the cylindrical substrate in the deposited film forming apparatus by a first transfer arm in the transfer machine, the cylinder is placed in the deposited film forming apparatus. A cylindrical substrate is installed on the substrate, the cylindrical support is rotatable, the source gas is introduced into the deposited film forming apparatus from the plurality of source gas introduction pipes, the inside of the deposited film forming apparatus is exhausted, and the cylinder A deposited film forming method comprising heating a substrate, exciting the source gas by discharge energy, and forming a deposited film by a plasma CVD method.

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