JP2010049956A - Electro-optical device, manufacturing method of electro-optical device, and electronic equipment - Google Patents

Abstract

An adhesion layer positioned between a light emission surface and a glass plate is formed by using a substance having a refractive index between the refractive index of the light emission surface and the refractive index of the glass plate. When the refractive index is 1.7, the reflection loss can be increased from about 6.7% to about 5.4%. Even in this case, the light reflection loss between the adhesion layer and the light exit surface, and the adhesion layer can be reduced. When a light reflection loss between the glass plate and the glass plate is added, there is a problem that a light reflection loss of about 1.4% occurs.
A protective layer is disposed between an adhesion layer (refractive index of 1.5) and a counter electrode using ITO (refractive index of 2.1). The protective layer 13 is silicon nitride having a refractive index of 2.1 in a region in close contact with the counter electrode 12, is silicon oxide having a refractive index of 1.5 in a region in close contact with the adhesive layer 18, and has a nitrogen composition in an intermediate region. By providing a distribution having a gradient represented by a continuous amount, reflection inside the protective layer 13 can be prevented. In addition, silicon nitride has a strong gas barrier property and can suppress deterioration of the organic EL device 1.
[Selection] Figure 2

Description

  The present invention relates to an electro-optical device, a method for manufacturing the electro-optical device, and an electronic apparatus.

  In recent years, as an electro-optical device, an organic EL device using an organic EL element that is a self-luminous element as a pixel has been developed. The organic EL device can respond at high speed with high luminance and low power consumption. In addition, since colorization with a color filter is easy, application to a full color display is expected, and research and development are actively conducted.

  Since the organic EL element is vulnerable to oxygen and moisture, after forming the organic EL element, it is necessary to seal it using a glass plate or the like so as to prevent the intrusion of air containing oxygen or moisture. Therefore, an adhesion layer using an epoxy resin or the like is formed to seal between the organic EL element and the glass plate. Here, as a substance constituting the light emitting part in the organic EL element, ITO (indium / tin / oxide) having both conductivity and translucency is usually used.

  The refractive index of the glass plate used for sealing and the refractive index of the adhesion layer using an epoxy resin or the like are about 1.5. On the other hand, the refractive index of ITO is about 2.1, and the light emitted from the organic EL element is reflected by this refractive index difference. This is a factor that decreases the light emission efficiency of the organic EL device.

  Therefore, in order to reduce the light reflectance at the interface in order to increase the light emission efficiency, as shown in Patent Document 1, an adhesion layer positioned between the light emission surface and the glass plate is refracted by the light emission surface. There is known a technique for reducing the light reflectivity by using a substance having a refractive index between the refractive index and the refractive index of the glass plate. When this technique is used, for example, when the refractive index of the adhesion layer is 1.7, it is possible to suppress the light reflection loss from about 6.7% to about 5.4%.

JP 2005-317302 A

  By using the technique described above, it is possible to suppress the light reflection loss, but the light reflection loss between the adhesion layer and the light exit surface and the light reflection loss between the adhesion layer and the glass plate are reduced. In addition, even in this case, a light reflection loss of about 1.4% occurs. Then, due to this light reflection loss, the light emission efficiency of the organic EL device is lowered, causing a problem that display luminance is reduced.

  In addition, the adhesion layer is preferably one that also functions to suppress the permeation of oxygen and moisture to the organic EL element (gas barrier property), but the adhesion layer needs to adhere between the light emitting surface and the glass plate. For this reason, it is necessary to use an organic resin-based member that is cured by light or heat. Therefore, the gas barrier property as a single unit is lower than that of an inorganic member. Therefore, the gas barrier property becomes insufficient, and there is a problem that oxygen and moisture enter the organic EL element to cause deterioration.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

Application Example 1 An electro-optical device according to this application example includes a light emitting element that emits light, a layer La having a refractive index Na disposed in an optical path of the light emitting element, and the light emitting element. A layer Lb having a refractive index Nb, located in a region sandwiching the layer La, in cooperation with the light emitting element, disposed in an optical path of the light emitting element, and disposed in the optical path of the light emitting element; A layer Lc positioned between the layer Lb, the refractive index of the layer Lc is continuously changing with respect to the traveling direction of light, and the refractive index of the layer Lc is the layer The refractive index NLa in the region close to La and the value of the refractive index NLb in the region close to the layer Lb are (Na-Nb) with respect to at least a part of the wavelength of the light emitted by the light emitting element. ^{) 2 / (Na + Nb)} 2 ≧ (Na-NLa) 2 / (Na + NLa) 2 + (1- ^{Na-NLa) 2 / (Na} + NLa) 2) × (Nb-NLb) and satisfies the ² / (Nb + NLb) ² expression.

  According to this, light reflection loss can be reduced compared with the case where the layer La and the layer Lb are directly laminated. Further, since the refractive index of the layer Lc continuously changes with respect to the traveling direction of light, it becomes possible to suppress reflection inside the layer Lc generated by inserting the layer Lc. Note that the layer La includes a transparent electrode layer that provides electric energy from an external circuit to the light emitting element.

  Application Example 2 In the electro-optical device according to the application example described above, the layer Lc is characterized in that the composition of the substance constituting the layer Lc is continuously changed with respect to the light traveling direction. To do.

  According to the application example described above, since the composition of the layer Lc is continuously changed, the distribution of the electro-optical characteristics having a gradient represented by a continuous amount is given to the layer Lc. Therefore, it is possible to configure the layer Lc having a refractive index distribution having a gradient represented by a continuous amount with respect to the traveling direction of light.

  Application Example 3 In the electro-optical device according to the application example described above, the layer Lc is made of a material having a higher gas barrier property than at least one of the layer La and the layer Lb. Features.

  According to the application example described above, the layer Lc can reduce the loss of light due to light reflection, and can also function as a gas barrier layer of oxygen or moisture. Therefore, it is possible to reduce the loss of light due to light reflection and to suppress the intrusion of oxygen and moisture. Therefore, it is possible to provide a highly reliable electro-optical device that can suppress deterioration of the light emitting element.

  Application Example 4 In the electro-optical device according to the application example, the light emitting element is an organic EL (electroluminescence) element.

  According to the application example described above, it is possible to reduce the loss of light due to light reflection and at the same time suppress the intrusion of oxygen and moisture. The organic EL element is a light emitting element that is weak against oxygen and moisture. Therefore, it is possible to suppress the deterioration of the organic EL element that is caused by suppressing the intrusion of oxygen and moisture.

  Application Example 5 In the electro-optical device according to the application example described above, at least one of silicon nitride, silicon oxide, or silicon nitride oxide is used as a material constituting the layer Lc, and the composition of the layer Lc is The amount of nitrogen continuously changes with respect to the traveling direction of light.

  According to the application example described above, since the layer Lc can be configured using a material that is suitably used as a constituent material of the organic EL element, the risk of unexpected effects is avoided as compared with the case of introducing a new material. It becomes possible. In addition, silicon nitride, silicon oxide, and silicon nitride oxide have higher gas barrier properties than organic substances typified by epoxy resins used when encapsulating organic EL elements, so that moisture can penetrate into the organic EL elements. It is possible to suppress the deterioration caused. Therefore, it is possible to provide an electro-optical device having high reliability compared to the case where the conventional technique is used.

  Further, the amount of nitrogen constituting the layer Lc has a distribution having a gradient represented by a continuous amount. Therefore, the refractive index of the layer Lc has a distribution having a gradient represented by a continuous amount having a value between the refractive index of silicon oxide and the refractive index of silicon nitride. Therefore, the layer Lc having a refractive index distribution having a gradient represented by a continuous amount with respect to the traveling direction of light can be configured, and reflection at the interface can be prevented.

  Application Example 6 In the electro-optical device according to the application example, the layer Lc is in close contact with an organic material layer having a Young's modulus lower than that of the layer Lc on at least one side.

  According to the application example described above, the stress of the layer Lc is relaxed by the organic material layer having a Young's modulus lower than that of the layer Lc. Therefore, it is possible to suppress the occurrence of cracks in the layer Lc derived from stress.

Application Example 7 An electro-optical device according to this application example includes a light emitting element that emits light, a layer La having a refractive index Na that is disposed in an optical path of the light emitting element, and the light emitting element. A layer Lb having a refractive index Nb, located in a region sandwiching the layer La, in cooperation with the light emitting element, disposed in an optical path of the light emitting element, and disposed in the optical path of the light emitting element; A layer Lc including at least one of silicon nitride and silicon oxynitride as a constituent material located between the layer Lb, and a nitrogen content having a positive correlation with the refractive index of the layer Lc is The refractive index of the region in close contact with the layer La is NLa, the refractive index of the region in close contact with the layer Lb is NLb, and the maximum nitrogen concentration of the layer Lc is The light emission when the refractive index of the region having Nmax is For at least part of the wavelength of the light child is ^{emitted, (Na-NLa) 2 /} (Na + NLa) 2 + (1- (Na-NLa) 2 / (Na + NLa) 2) × ((Nb-NLb) 2 / (Nb + NLb) ² ) ≧ (Na−Nmax) ² / (Na + Nmax) ² + (1− (Na−Nmax) ² / (Na + Nmax) ² ) × ((Nb−Nmax) ² / (Nb + Nmax) ² ) It is characterized by satisfying.

  According to this, it is possible to reduce the loss of light due to light reflection and at the same time suppress the intrusion of moisture. Here, the layer Lc is composed of silicon nitride, silicon oxide, and silicon nitride oxide, and by disposing a region in which the nitrogen concentration is increased in the layer Lc, gas barrier properties can be achieved as compared with the case where all silicon oxide is used. Can be increased.

  On the other hand, increasing the nitrogen concentration increases the refractive index of the layer Lc. Therefore, the refractive index NLa of the region located on the side of the layer La serving as the end portion of the layer Lc is lowered by lowering the nitrogen concentration so as to satisfy the above-described formula, and similarly, the refractive index of the region located on the side of the layer Lb. The nitrogen concentration is lowered so that NLb satisfies the above formula. By reducing the nitrogen concentration, it is possible to lower the refractive index NLa and the refractive index NLb, and it is possible to use a highly versatile organic adhesive member having a refractive index closer to silicon oxide than silicon nitride. .

  Therefore, light reflection can be suppressed as compared with the case where the refractive index of the entire layer Lc is set to Nmax. Further, by increasing the nitrogen concentration contained in the layer Lc so that the refractive index corresponds to Nmax, the gas barrier property of the layer Lc is improved, and it is possible to suppress the deterioration of characteristics due to moisture intrusion into the light emitting element. It becomes. Note that the layer La includes a transparent electrode layer that provides electric energy from an external circuit to the light emitting element.

Application Example 8 A method for manufacturing an electro-optical device according to this application example includes a step of manufacturing a layer La having a refractive index Na disposed in an optical path of a light emitting element that emits light, and a close contact with the layer La. And a step of forming a layer Lc having a refractive index NLa on the layer La side and a refractive index NLb in a region facing the layer La, and a surface facing the layer La across the layer Lc. Forming a layer Lb having a refractive index Nb in close contact with the layer Lc, the refractive index of the layer Lc continuously changing with respect to the traveling direction of light, and the layer Lc The refractive index of the light emitting element with respect to the refractive index NLa in the region in contact with the layer La and the refractive index NLb in the region in contact with the layer Lb is at least part of the wavelength of light emitted by the light emitting element. ^{, (Na-Nb) 2 /} (Na + Nb) 2 ≧ (Na-N ^{a) 2 / (Na + NLa} ) 2 + (1- (Na-NLa) 2 / (Na + NLa) 2) × (Nb-NLb) 2 / (Nb + NLb) and satisfies the ^second expression.

  According to this, compared with the case where the layer La and the layer Lb are piled up directly, the process of forming the structure which reduces light reflection loss can be provided. In addition, since the refractive index of the layer Lc continuously changes with respect to the traveling direction of the light, a manufacturing method that can suppress reflection inside the layer Lc generated by inserting the layer Lc. Can be provided. Note that the layer La includes a transparent electrode layer that provides electric energy from an external circuit to the light emitting element.

Application Example 9 A method for manufacturing an electro-optical device according to this application example includes a step of manufacturing a layer La having a refractive index Na disposed in an optical path of a light emitting element that emits light, and a close contact with the layer La. And a step of forming a layer Lc having a refractive index NLa on the layer La side and a refractive index NLb in a region facing the layer La, and a surface facing the layer La across the layer Lc. Forming a layer Lb having a refractive index Nb that is in close contact with the layer Lc, and the nitrogen content of the layer Lc is continuously changing with respect to the traveling direction of light, and the layer La When the refractive index of the region in close contact with the layer Lb is NLa, the refractive index of the region in close contact with the layer Lb is NLb, and the refractive index of the region having the maximum nitrogen concentration in the layer Lc is Nmax, the light emitted from the light emitting element For at least some wavelengths of (Na- ^{La) 2 / (Na + NLa} ) 2 + (1- (Na-NLa) 2 / (Na + NLa) 2) × ((Nb-NLb) 2 / (Nb + NLb) 2) ≧ (Na-Nmax) 2 / (Na + Nmax) 2 + (1- (Na−Nmax) ² / (Na + Nmax) ² ) × ((Nb−Nmax) ² / (Nb + Nmax) ² ) is satisfied.

  According to this, it is possible to provide a method for manufacturing a structure capable of reducing the loss of light due to light reflection and at the same time suppressing the ingress of moisture. The layer Lc is made of at least one of silicon nitride, silicon oxide, and silicon nitride oxide, and the gas barrier property can be improved by increasing the nitrogen concentration in the layer Lc.

  On the other hand, increasing the nitrogen concentration increases the refractive index of the layer Lc. When the refractive index is high, materials that can be closely contacted with the layer Lc while suppressing optical reflection are limited. Therefore, the refractive index NLa of the region located on the side of the layer La serving as the end portion of the layer Lc is lowered by lowering the nitrogen concentration so as to satisfy the above-described formula, and similarly, the refractive index of the region located on the side of the layer Lb. NLb is formed at a reduced nitrogen concentration so as to satisfy the above formula. By forming with a reduced nitrogen concentration, it is possible to lower the refractive index NLa and the refractive index NLb, and it is possible to encapsulate using a highly versatile organic adhesive member. Note that the layer La includes a transparent electrode layer that provides electric energy from an external circuit to the light emitting element.

  Application Example 10 In the electro-optical device manufacturing method according to the application example described above, at least one of silicon nitride, silicon oxide, or silicon nitride oxide is used as a material constituting the layer Lc, and the layer Lc Uses a silicon-based sputtering method, and continuously changes the partial pressure ratio of oxygen and nitrogen in a mixed gas of oxygen and nitrogen (including the case where one of them is 0) as an atmospheric gas, so that silicon nitride and silicon oxide Alternatively, the composition of silicon nitride oxide is continuously changed.

  According to the application example described above, the nitrogen content of the layer Lc can be continuously changed. Since the sputtering method can form a layer at a lower temperature than the CVD method, an epoxy resin or an acrylic resin that is weak at a high temperature can be used as the layer La or the layer Lc. Epoxy resin and acrylic resin have lower Young's modulus than silicon nitride, silicon oxide, or silicon nitride oxide, so that silicon nitride, silicon oxide, or silicon oxide due to stress generated when forming silicon nitride, silicon oxide, or silicon nitride oxide, Alternatively, generation of cracks and pinholes in silicon nitride oxide can be suppressed. Here, as the resin, a resin other than an epoxy resin may be used. If a resin having a Young's modulus lower than that of silicon nitride oxide is used, the same effect as that obtained when an epoxy resin is used can be generated.

  Application Example 11 An electronic apparatus according to this application example includes the above-described electro-optical device.

  According to this, an electronic apparatus having high luminance and high reliability is provided by including an electro-optical device that has high luminance by suppressing reflection loss at the interface and that suppresses the ingress of moisture. It becomes possible.

  Hereinafter, embodiments embodying the present invention will be described with reference to the drawings. In the following embodiments, “upper” indicates the observer side direction.

(First Embodiment: Antireflection structure between anode and adhesive layer)
FIG. 1 is a schematic configuration diagram of an organic EL device 1 as an electro-optical device according to the first embodiment. The organic EL device 1 includes a first substrate 4a and a second substrate 4b that face each other. An adhesion layer 18 is formed between the first substrate 4a and the second substrate 4b. The distance between the first substrate 4a and the second substrate 4b is uniformly controlled throughout the panel by the adhesion layer 18 as the layer Lb.

  The first substrate 4a has a substrate body 10 made of glass, quartz, plastic, or the like as a base, and a circuit element portion 14 including a thin film transistor, a pixel electrode 111 as an anode, an organic functional layer on the adhesion layer 18 side of the substrate body 10. A light emitting layer 11 including 110, a counter electrode 12 as a layer La serving as a cathode, and a protective layer 13 as a layer Lc are provided. Here, the light emitting portion is constituted by a part of the light emitting layer 11 and indicates a portion that emits light when current is supplied from the pixel electrode 111 and the counter electrode 12.

  A plurality of dot regions A are arranged in a matrix on the substrate body 10. A pixel electrode 111 is disposed in each dot region A, and a signal line 102, a common power supply line 103, a scanning line 101, and scanning lines for other pixel electrodes (not shown) are disposed in the vicinity thereof. As the planar shape of the dot region A, any shape such as a circle or a rectangle having a corner R can be applied in addition to the rectangle shown in the figure.

  In the dot region A, a first thin film transistor 122 to which a scanning signal is supplied to the gate electrode via the scanning line 101 and a holding for holding an image signal supplied from the signal line 102 via the first thin film transistor 122 Common when the capacitor cap, the second thin film transistor 123 to which the image signal held by the holding capacitor cap is supplied to the gate electrode, and the common power supply line 103 through the second thin film transistor 123 are electrically connected A pixel electrode 111 into which a driving current flows from the power supply line 103 and a light emitting layer 11 sandwiched between the pixel electrode 111 and the counter electrode 12 are provided. The light emitting layer 11 including the organic functional layer 110 is stacked on the pixel electrode 111 and emits light by a current injected from the pixel electrode 111.

  In the dot region A, when the scanning line 101 is driven and the first thin film transistor 122 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor cap, and the second capacitance is changed according to the state of the holding capacitor cap. The conduction state of the thin film transistor 123 is determined. In addition, a current flows from the common power supply line 103 to the pixel electrode 111 through the channel of the second thin film transistor 123, and further a current flows to the counter electrode 12 through the light emitting layer 11. The light emitting layer 11 emits light according to the amount of current at this time.

  An adhesion layer 18 is disposed between the first substrate 4 a and the second substrate 4 b, and the first substrate 4 a and the second substrate 4 b are disposed via the adhesion layer 18. The second substrate 4b has a substrate body 15 made of glass, quartz, plastic, or the like as a base, and includes a color filter 16 on the adhesion layer 18 side of the substrate body 15. The color filter 16 is formed by arranging three primary colors of R (red), G (green), and B (blue) in a predetermined pattern, for example, a stripe arrangement, a delta arrangement, and a mosaic arrangement. As shown in FIG. 2A, which will be described later, one color element of the color filter 16 is arranged corresponding to one of the dot areas A which is the minimum unit for forming an image.

  An adhesion layer 18 is disposed between the first substrate 4a and the second substrate 4b. As the adhesion layer 18, a thermosetting resin or an ultraviolet curable resin is used. In particular, an epoxy resin, which is a kind of thermosetting resin, is preferable because it has higher light resistance than a photosensitive resin. The second substrate 4b is bonded to the first substrate 4a through the adhesion layer 18. The surface of the first substrate 4a on which the light emitting element is formed is sealed with a protective layer 13. The protective layer 13 contains silicon oxynitride and prevents the counter electrode 12 and the light emitting layer 11 from being oxidized by preventing intrusion of water and oxygen. The structure of the protective layer 13 will be described later.

FIG. 2 is an enlarged view in which the display area of the organic EL device 1 in FIG. 1 is enlarged. In the drawing, three dot areas A _R , A _G , and A _B corresponding to the respective colors of red (R), green (G), and blue (B) are shown. In the figure, (a) is a plan view of three dot areas A _R , A _G , and A _B , (b) is a cross-sectional view taken along the line EE ′ of the dot area A _R , and (c) is a protection. 3 is an enlarged sectional view of a region including a layer 13. FIG.

  As shown in FIG. 2A, the periphery of the pixel electrode 111 is surrounded by a partition 112 (see FIG. 2B) and is electrically separated from other pixel electrodes. A large number of openings 112H of the partition 112 are arranged in the horizontal direction in the drawing and in the vertical direction in the drawing according to the arrangement of the color filters 16R, 16G, and 16B.

Next, the cross-sectional structure of the organic EL device 1 will be described with reference to FIG. Since the dot areas A _R , A _G , and A _B basically have the same cross-sectional structure, the cross-sectional structure of A _R will be described as a representative.

  The first substrate 4a (see FIG. 1) includes a circuit element unit 14, a pixel electrode (anode) 111, a light emitting layer 11, and a counter electrode 12 in this order on the upper side of the substrate body 10. The circuit element portion 14 is provided with an interlayer insulating layer 144b. A reflective layer 126 using a light reflective metal layer such as aluminum or silver is formed on the interlayer insulating layer 144b. An interlayer insulating layer 144c is formed on the interlayer insulating layer 144b so as to cover the reflective layer 126. Furthermore, on the interlayer insulating layer 144c, transparent pixel electrodes 111 using ITO are formed in an island shape. Although not shown in FIG. 2B, below the pixel electrode 111, a driving circuit including a scanning line, a signal line, a common power supply line, a thin film transistor, a storage capacitor, and the like, and the driving circuit and the pixel electrode are provided. A contact hole for electrically connecting to 111 is formed.

  A light emitting layer 11 is formed on the pixel electrode 111. The light emitting layer 11 is electrically separated by the partition 112. The light emitting layer 11 includes one or more functional layers. As the light emitting layer 11, a known light emitting material capable of emitting fluorescence or phosphorescence is used. Specifically, (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenyle derivative (PPP), polyvinylcarbazole (PVK), polythiophene derivative, polymethylphenylsilane A polysilane such as (PMPS) is preferably used. In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, and quinacridone. It can also be used by doping a low molecular weight material such as. Alternatively, a low molecular material such as carbazole (CBP) can be doped with these low molecular dyes to form a light emitting layer. Tris-8-quinolinolato aluminum complex (Alq3) can also be added as an electron transporting layer as part of the light emitting layer.

The light emitting layer 11 includes three kinds of light emitting materials, a red light emitting material capable of emitting red light, a green light emitting material capable of emitting green light, and a blue light emitting material capable of emitting blue light, and these light emitting materials are mixed. Therefore, it is configured to emit white light. The light emitting layer 11 is formed so as to cover the entire display area, and is a layer common to the dot areas A _R , A _G , and A _B. The white light emitted from the light emitting layer 11 is colored by being transmitted through the color filter 16 so that color display is performed. The color filter 16 includes a black matrix 16BL to separate areas corresponding to the respective colors.

  Note that layers other than the light emitting layer may be further formed in the light emitting layer 11. For example, a hole injection layer that is disposed between the pixel electrode 111 and the light emitting layer and injects / transports holes supplied from the pixel electrode 111 to the light emitting layer may be formed. Further, an electron injection layer that is disposed between the counter electrode 12 and the light emitting layer and injects / transports electrons supplied from the counter electrode 12 to the light emitting layer may be formed.

As the partition 112, an inorganic insulating material such as silicon oxide or an organic insulating material such as acrylic resin is used. In addition to such inorganic materials or organic materials, insulating materials made of organic / inorganic hybrid materials can also be used. The partition 112 is formed so as to run on the peripheral edge of the pixel electrode 111. The light emitting layer 11 is disposed inside the opening of the partition 112. Partition wall 112 defines the dot area A _R, A _G, and insulation between A _B, formation region of the organic EL element (dot area A _R, A _G, the boundary portion of the A _B).

  On the light emitting layer 11, a counter electrode 12 covering the substantially entire surface of the substrate body 10 is formed. The counter electrode 12 includes an electrode body 12a containing a metal material such as an alkali metal having a small work function or an alkaline earth, and an auxiliary electrode 12b made of a metal material such as Al, Au, or Ag having excellent conductivity. ing. The electrode main body 12a is formed of a material containing magnesium (Mg), lithium (Li), calcium (Ca), or the like. Preferably, a thin-layer translucent electrode made of MgAg (a material in which Mg and Ag are mixed at a weight ratio of Mg: Ag = 10: 1) is preferable because it has a low electron injection barrier and has corrosion resistance. Adopted. In addition to this, it is possible to form the counter electrode 12 with the same effect by using an MgAgAl electrode, a LiAl electrode, a LiFAl electrode, or the like. Moreover, the layer which laminated | stacked these metal thin layers and transparent conductive materials, such as ITO, can also be used as the counter electrode 12.

The auxiliary electrode 12b assists the conductivity of the electrode body 12a, and is arranged around the dot area A (A _R , A _G , A _B ) (interdot area) in order to prevent the aperture ratio from decreasing. Has been. Note that the auxiliary electrodes 12b may be arranged in a stripe in one direction, or may be arranged in a lattice in two directions. The auxiliary electrode 12b can also function as a light shielding layer.

  The counter electrode 12 has a function of supplying a current to the light emitting layer 11 in cooperation with the pixel electrode 111 and a function of transmitting the emitted light and emitting the light to the upper side of the substrate body 10. As the material of the counter electrode 12, a material in which ITO having a high light transmittance and a low resistivity is disposed on the above-described metal having a small work function is preferably used. ITO has higher oxidation resistance than a metal having a low work function, and also has a function of protecting the above-described electrode.

  As shown in FIG. 2C, the protective layer 13 as the layer Lc is disposed at a position sandwiched between the counter electrode 12 as the layer La and the adhesion layer 18 as the layer Lb. ITO constituting the counter electrode 12 has a refractive index of about 2.1 with respect to the wavelength of light emitted from the light emitting layer 11. On the other hand, the adhesion layer 18 is made of an epoxy resin or the like, and the refractive index with respect to the wavelength of light emitted from the light emitting layer 11 has a value of about 1.5. The protective layer 13 is configured using at least one of silicon nitride, silicon oxide, or silicon nitride oxide with a changed nitrogen ratio. When the nitrogen ratio of silicon oxynitride is increased, the refractive index is increased, and at the same time, the property (gas barrier property) of preventing the entry of substances such as oxygen and moisture is improved. In FIG. 2C, the nitrogen ratio is represented by a dotted line, and the oxygen ratio is represented by a solid line.

  As shown in FIG. 2C, the nitrogen concentration of the protective layer 13 is increased on the counter electrode 12 side (in this case, silicon nitride containing no oxygen is obtained: the refractive index of silicon nitride is 2.1). ), It is possible to suppress reflection that occurs at the interface between the counter electrode 12 and the protective layer 13. Further, by increasing the nitrogen concentration, it is possible to improve the gas barrier properties, and it is possible to extend the life of the organic EL device 1 that is weak against oxygen and moisture.

Then, the nitrogen concentration of the protective layer 13 is gradually decreased toward the adhesion layer 18 side (continuously changed) so that silicon oxide (refractive index 1.5) is formed at the interface with the adhesion layer 18. (It is configured so as to have a refractive index distribution represented by a continuous amount with respect to the traveling direction of light), so that reflection occurring at the interface between the adhesion layer 18 and the protective layer 13 can be suppressed. More specifically, the refractive index of the counter electrode 12 as the layer La is Na, the refractive index of the adhesion layer 18 as the layer Lb is Nb, and the layer La side (the counter electrode 12 side) of the protective layer 13 as the layer Lc. ) When the refractive index of the end face is NLa and the refractive index of the end face of the layer Lb side (adhesion layer 18 side) is NLb, when the counter electrode 12 and the adhesion layer 18 are in direct contact, the light reflectance is (Na -Nb) ² / (Na + Nb) ² On the other hand, by interposing the protective layer 13, the light reflectance is (Na−NLa) ² / (Na + NLa) ² + (1− (Na−NLa) ² / (Na + NLa) ² ) × (Nb−NLb) ² / A value represented by (Nb + NLb) ² is taken. Therefore, (Na—Nb) ² / (Na + Nb) ² ≧ (Na—NLa) ² / (Na + NLa) ² + (1− (Na—NLa) ² / (Na + NLa) ² ) × (Nb−NLb) ² / ( By controlling the refractive index distribution of the protective layer 13 so as to satisfy the relational expression of (Nb + NLb) ² , it is possible to reduce the interface reflection compared to the case where the counter electrode 12 and the adhesion layer 18 are in direct contact with each other.

  In addition, an organic material typified by an epoxy resin that constitutes the adhesion layer 18 has a low gas barrier property. Therefore, the gas barrier property can be improved by interposing the protective layer 13, and the life of the organic EL device 1 can be extended. When an organic material typified by an epoxy resin is used for the adhesion layer 18, the Young's modulus takes a low value of about 3 GPa. On the other hand, the Young's modulus of silicon nitride oxide varies depending on the composition ratio, but takes a high value of about 100 GPa to 300 GPa. By arranging the protective layer 13 so as to overlap the adhesive layer 18, the stress of the protective layer 13 itself is relieved by the adhesive layer 18. Therefore, it becomes possible to prevent the generation of cracks and pinholes in the protective layer 13 due to stress. Here, as a layer thickness capable of preventing the occurrence of cracks and pinholes due to the stress of the protective layer 13 itself, an approximate value of about 400 nm is preferable. In FIG. 2C, the region where the nitrogen concentration is high is configured to be thick. However, for example, the composition may be changed to a triangular wave shape. In this case, the protective layer 13 having a small residual stress (the Young's modulus of silicon nitride is about three times higher than that of silicon oxide) can be formed.

Second Embodiment: Gas Barrier Layer Structure with Reduced Light Reflection Loss
Hereinafter, the second embodiment will be described with reference to the drawings. FIG. 3 is a schematic configuration diagram of an organic EL device 1 as an electro-optical device which is a second embodiment of the light-emitting device of the present invention. 4 (a) is three dot areas A _R, A _G, a plan view of A _B, (b) is a sectional view taken along line E-E 'of the same dot area A _R, (c) is dense 3 is an enlarged cross-sectional view of a region including a layer 17. FIG.

  The difference between FIGS. 1 and 3 and FIGS. 2 and 4 is that a dense layer 17 is inserted between the adhesion layer 18 and the color filter 16 in FIGS. 2 and 4. Since there is no difference with respect to other configurations, the following description is omitted for FIGS. 3 and 4A.

  When the gas barrier property is improved by increasing the layer thickness of the protective layer 13 (see FIG. 2B) used in the description of the first embodiment, at least silicon nitride, silicon oxide, or silicon nitride oxide is used. The protective layer 13 using one causes cracks and pinholes due to the stress of the protective layer 13 itself, and the gas barrier properties deteriorate. Therefore, as shown in FIG. 4B, in addition to the protective layer 13, an adhesion layer 18 using an epoxy resin or the like (about 3 GPa) having a lower Young's modulus than the dense layer 17 and an acrylic resin or the like (about 3 GPa) are used. By arranging the dense layer 17 (100 GPa to 300 GPa) between the color filters 16, cracks and pinholes in the dense layer 17 can be prevented by relaxing the stress of the dense layer 17. It is possible to ensure a high gas barrier property.

  Next, the dense layer 17 that suppresses light reflection loss and improves gas barrier properties will be described with reference to FIG. In FIG. 4C, the nitrogen ratio is represented by a dotted line, and the oxygen ratio is represented by a solid line. The dense layer 17 as the layer Lc is disposed so as to be sandwiched between the adhesion layer 18 as the layer La and the color filter 16 as the layer Lb. The refractive index of the adhesion layer 18 as the layer La and the color filter 16 as the layer Lb has a typical value of about 1.5, which is almost the same as that of silicon oxide. The dense layer 17 is made of silicon oxide having a composition in which the refractive index is about 1.5 in a region in close contact with the adhesion layer 18. Similarly, the refractive index in the region in close contact with the color filter 16 is about 1.5. It is comprised with the silicon oxide which has the composition which becomes.

  In the vicinity of the center of the dense layer 17, the nitrogen concentration is typically higher than that of the region in close contact with the close contact layer 18 or the region in close contact with the color filter 16, typically silicon nitride. The nitrogen concentration in the region in close contact with the adhesion layer 18, the region in close contact with the color filter 16, and the vicinity of the center has a distribution having a gradient represented by a continuous amount. Since silicon nitride is excellent in gas barrier properties, the reliability of the organic EL device 1 can be improved. Further, since the nitrogen concentration has a distribution with a gradient represented by a continuous amount, light reflection loss due to the dense layer 17 having a high nitrogen concentration (high refractive index) can be suppressed and inserted.

Here, the light reflection loss when the nitrogen concentration is changed stepwise and when the nitrogen concentration is changed with a gradient represented by a continuous amount will be considered. The refractive index of the adhesion layer 18 as the layer La is Na, the refractive index of the color filter 16 as the layer Lb is Nb, and the refractive index in the region where the dense layer 17 as the layer Lc is in close contact with the adhesion layer 18 is NLa. The adhesion layer as the layer La when the refractive index in the region in close contact with NLb is NLb, the refractive index in the region with the highest nitrogen concentration is Nmax, and the nitrogen concentration is changed with a gradient represented by a continuous amount 18. Light reflection loss caused by passing through the dense layer 17 as the layer Lc and the color filter 16 as the layer Lb is (Na−NLa) ² / (Na + NLa) ² + (1− (Na−NLa) ^2. / (Na + NLa) ² ) × ((Nb−NLb) ² / (Nb + NLb) ² ). On the other hand, when the nitrogen concentration is changed stepwise, the light reflection loss is (Na−Nmax) ² / (Na + Nmax) ² + (1− (Na−Nmax) ² / (Na + Nmax) ² ) × ((Nb −Nmax) ² / (Nb + Nmax) ² ). Therefore, (Na—NLa) ² / (Na + NLa) ² + (1− (Na—NLa) ² / (Na + NLa) ² ) × ((Nb−NLb) ² / (Nb + NLb) ² ) ≧ (Na−Nmax) ² / (Na + Nmax) ² + (1− (Na−Nmax) ² / (Na + Nmax) ² ) × ((Nb−Nmax) ² / (Nb + Nmax) ² ), the nitrogen concentration is expressed as a continuous amount. By changing with the gradient, the light reflection loss due to the insertion of the dense layer 17 can be suppressed smaller than when the nitrogen concentration is changed stepwise.

(Modification)
In the above-described embodiment, an example in which the light emitting layer 11 emits white light and RGB display is performed by the color filter 16 has been described. However, this may be configured by using light emitting layers corresponding to RGB colors. In this case, it is possible to improve the energy conversion efficiency compared to the case where white light is emitted and color separation is performed by the color filter 16. In the above-described embodiment, the example using the top emission structure has been described. However, this can easily correspond to the structure using the bottom emission structure. In this case, the reflective layer 126 is disposed on the counter electrode 12, and the color filter 16 is disposed on the back side of the substrate body 10. And the protective layer 13 is arrange | positioned instead of the interlayer insulation layer 144c. Here, the protective layer 13 uses silicon nitride oxide or silicon nitride with a low nitrogen content on the interlayer insulating layer 144b side, and silicon nitride oxide or silicon oxide with a high nitrogen content on the counter electrode 12 side. It is possible to provide the organic EL device 1 in which the light reflection loss of light is suppressed.

  Moreover, although the example which made the number of layers of the dense layer 17 into one layer was demonstrated, multiple this may be arrange | positioned and it becomes possible to obtain higher gas barrier property. Further, the change in the nitrogen composition in the dense layer 17 and the protective layer 13 only needs to be changed with a gradient represented by a continuous amount. For example, the nitrogen concentration may be once lowered and then increased again. Absent. In addition, silicon nitride oxide is used as the material of the dense layer 17, and a layer with high density is arranged near the center of the dense layer 17, and a layer with low density is arranged at both ends to control the refractive index and gas barrier properties. You may do it. This structure can be realized, for example, by changing the temperature of the substrate body 10 and forming a layer using a high temperature near the center of the dense layer 17 and a low temperature at both ends. In this case, the upper limit of the temperature is defined by the heat resistant temperature of the organic material layer such as the adhesion layer 18. In this case, since the composition has a constant value in the dense layer 17, no composition deviation occurs in principle. Therefore, the dense layer 17 can be configured with high reproducibility.

  Further, the silicon nitride oxide concentration gradient in the dense layer 17 has a large concentration gradient in the vicinity of the region in close contact with the adhesion layer 18 and in the region in close contact with the color filter 16, and has a high nitrogen concentration (including silicon nitride). You may make it take the thickness of a large. In this case, higher gas barrier properties can be ensured. Similarly, the protective layer 13 also has a higher gas barrier property because the layer thickness of the region having a high nitrogen concentration is increased and the gradient is increased on the interlayer insulating layer 144b side, thereby increasing the layer thickness of the region having a high nitrogen concentration. It is possible to obtain a protective layer 13 having a high value. Moreover, the length of the region close to the composition of silicon oxide may be increased. In this case, silicon oxide having a small residual stress (the Young's modulus of silicon nitride is about three times higher than that of silicon oxide) is mainly used. Therefore, it becomes possible to configure the organic EL device 1 while suppressing a decrease in the reliability of the organic EL device 1 due to residual stress.

  In the above-described embodiment, an example in which a silicon nitride oxide-based material is used for the protective layer 13 has been described. This is, for example, that the heavy metal concentration in silicon oxide is changed with a gradient represented by a continuous amount. Thus, the refractive index may be changed. In this case, since the Young's modulus of silicon oxide generally decreases due to the addition of heavy metals, the internal stress is relieved. For this reason, it is possible to suppress the generation of cracks and pinholes in the protective layer 13.

  Further, the example in which the pixel electrode 111 is an anode and the counter electrode 12 is a cathode has been described. However, the pixel electrode 111 may be changed to a cathode and the counter electrode 12 may be changed to an anode by changing the stacking order.

(Third Embodiment: Antireflection Structure and Gas Barrier Layer Manufacturing Method)
Hereinafter, a third embodiment will be described with reference to the drawings. FIGS. 5A to 5C and FIGS. 6A and 6B are schematic cross-sectional views for explaining the manufacturing process according to the present embodiment. In addition, about the manufacturing process of a well-known part, it describes that it is well-known and description is abbreviate | omitted. 5 (a) to 5 (c) and FIGS. 6 (a) and 6 (b), what is closer to the substrate body 10 (see FIG. 1) than the interlayer insulating layer 144b (see FIG. 5 (a)) is publicly known. Since it is formed using a technique, illustration is omitted.

  First, a semiconductor element such as a TFT is formed on a substrate body 10 (see FIG. 1) by a known technique. Next, an interlayer insulating layer 144b is formed, and a reflective layer 126 is formed thereon. Next, after the interlayer insulating layer 144c is formed, the pixel electrode 111 is formed, and the partition 112 is formed.

  Next, the light emitting layer 11 is formed. The light emitting layer 11 includes one or more functional layers. As the light emitting layer 11, a known light emitting material capable of emitting fluorescence or phosphorescence is used. Specifically, (poly) fluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenyle derivative (PPP), polyvinylcarbazole (PVK), polythiophene derivative, polymethylphenylsilane A polysilane such as (PMPS) is preferably used. In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, and quinacridone. It can also be used by doping a low molecular weight material such as. Alternatively, a low molecular material such as carbazole (CBP) can be doped with these low molecular dyes to form a light emitting layer. Tris-8-quinolinolato aluminum complex (Alq3) can also be added as an electron transporting layer as part of the light emitting layer.

  The light emitting layer 11 includes three kinds of light emitting materials, a red light emitting material capable of emitting red light, a green light emitting material capable of emitting green light, and a blue light emitting material capable of emitting blue light, and these light emitting materials are mixed. Therefore, it is configured to emit white light. The light emitting layer 11 can be formed by stacking the above-described substances by using a vapor deposition method, a droplet discharge method, or the like. Note that the light emitting layer 11 that emits light corresponding to each region may be formed by performing mask vapor deposition or separate coating by a droplet discharge method instead of the procedure of mixing so as to emit white light. In this case, the light emission efficiency can be improved. Next, the counter electrode 12 is formed. First, the auxiliary electrode 12b made of a metal material such as Al, Au, or Ag having excellent conductivity is formed using a means such as mask vapor deposition. Next, the counter electrode 12 forms a thin layer of the electrode main body 12a containing a metal material such as an alkali metal having a small work function or an alkaline earth. Then, an ITO layer is formed using an ion plating method. FIG. 5A shows a cross-sectional view after the steps so far are completed. Here, the thickness of the pixel electrode 111 is changed for each color. This is configured in order to resonate by aligning the wavelength and the optical path length (distance between the reflective layer 126 and the counter electrode 12) for each color, to improve color purity and to improve luminous efficiency. . For this reason, red (R) having a long wavelength is thick, and the green (G) and blue (B) are formed thin in the following order.

  Next, the protective layer 13 is formed. The protective layer 13 is made of silicon nitride (refractive index 2.1) in a region in close contact with the counter electrode 12 (ITO: refractive index 2.1), and an adhesion layer 18 (epoxy resin: refractive index of about 1.5) described later. ) Is in close contact with silicon oxide (refractive index 1.5). As a manufacturing method of the protective layer 13, it can form using the reactive sputtering method. FIG. 7 is a schematic cross-sectional view of a reactive sputtering apparatus. Hereinafter, the configuration of the reactive sputtering apparatus 200 will be described with reference to FIG. The reactive sputtering apparatus 200 includes a plasma generation chamber 201, an exhaust system 202, a magnetic field generation coil 203, a microwave introduction window 204, a plasma generation gas supply unit 205, a growth chamber 206, a silicon target 207, an RF-DC power source 208, a reactive gas. A supply unit 210. Hereinafter, a layer forming method using the reactive sputtering apparatus 200 will be described.

  Microwaves are introduced into the plasma generation chamber 201 from the microwave introduction window 204. A plasma generating gas such as argon is supplied from the plasma generating gas supply unit 205. The plasma generating gas receives energy from the microwaves and turns into plasma by resonating with the magnetic field generated by the magnetic field generating coil 203.

  The generated plasma drifts into the growth chamber 206 due to a bias applied to the silicon target 207 from the RF-DC power supply 208 and a magnetic field strength gradient generated by the magnetic field generating coil 203. Then, silicon comes into contact with the silicon target 207 and is simultaneously ionized and radicalized by receiving energy from the plasma. This plasma drifts toward the substrate body 10 (see FIG. 1) on which the counter electrode 12 is formed. Then, before the plasma reaches the substrate body 10, nitrogen and oxygen are supplied from the reaction gas supply unit 210. The supplied nitrogen and oxygen are ionized and radicalized, and react with silicon ions and silicon radicals to form silicon oxide, silicon nitride, and silicon nitride oxide. Then, the protective layer 13 is formed on the exposed surface of the structure located on the substrate body 10. After forming the protective layer 13, the plasma loses energy and gasifies. Then, the gas is exhausted from the growth chamber 206 by the exhaust system 202.

  The protective layer 13 is formed on the counter electrode 12 (see FIG. 5A) using ITO (refractive index 2.1), and will be described later with an adhesion layer 18 (refractive index 1.5) using an epoxy resin or the like. And the like). The composition of silicon oxide, silicon nitride, and silicon nitride oxide constituting the protective layer 13 can be controlled by the partial pressure of nitrogen or oxygen supplied from the reaction gas supply unit 210. On the counter electrode 12 side, a layer having a refractive index matched to ITO (refractive index 2.1) is formed. Specifically, only nitrogen is supplied from the reaction gas supply unit 210 to form silicon nitride (refractive index 2.1). Since silicon nitride has a high gas barrier property, it can suppress the occurrence of light reflection loss and can suppress the intrusion of oxygen and moisture into the components formed on the substrate body 10 side with respect to the protective layer 13. It becomes possible to suppress the occurrence of defects.

  Then, during the formation of the layer, the nitrogen partial pressure is gradually lowered and the oxygen partial pressure is raised, so that the light reflection loss can be suppressed and the refractive index can be lowered. Then, at the end of the protective layer 13 on the adhesion layer 18 side, silicon oxide (refractive index 1.5) can be used to suppress light reflection loss at the interface between the protection layer 13 and the adhesion layer 18. Become. A cross-sectional view in this state is shown in FIG.

  Next, the adhesion layer 18 is formed. As the adhesion layer 18, it is preferable to use a thermosetting epoxy resin, and it is possible to obtain a layer excellent in light resistance as compared with the case of using a resin having a photosensitive group. Note that even when a resin having a photosensitive group is used, it is applicable when the resin has sufficient light resistance. FIG. 5C shows a cross-sectional view after the steps up to here are completed.

Here, a value suitable as the refractive index distribution of the protective layer 13 will be considered. The refractive index of the counter electrode 12 as the layer La is Na, the refractive index of the adhesion layer 18 as the layer Lb is Nb, and the refractive index of the layer La side (counter electrode 12 side) end face of the protective layer 13 as the layer Lc. When NLa and the refractive index of the end face of the layer Lb side (adhesion layer 18 side) are NLb, when the counter electrode 12 and the adhesion layer 18 are brought into direct contact with each other, the light reflectivity is (Na-Nb) ² / ( The value shown by Na + Nb) ² is taken. On the other hand, by interposing the protective layer 13, the light reflectance is (Na−NLa) ² / (Na + NLa) ² + (1− (Na−NLa) ² / (Na + NLa) ² ) × (Nb−NLb) ² / A value represented by (Nb + NLb) ² is taken. Therefore, (Na—Nb) ² / (Na + Nb) ² ≧ (Na—NLa) ² / (Na + NLa) ² + (1− (Na—NLa) ² / (Na + NLa) ² ) × (Nb−NLb) ² / ( By controlling the refractive index distribution of the protective layer 13 so as to satisfy the relational expression of (Nb + NLb) ² , interface reflection can be suppressed.

  In addition, an organic material typified by an epoxy resin that constitutes the adhesion layer 18 has a low gas barrier property. Therefore, the gas barrier property can be improved by interposing the protective layer 13, and the life of the organic EL device 1 described later can be extended.

  Next, the dense layer 17 is formed. The dense layer 17 is between an adhesion layer 18 using a thermosetting epoxy resin or the like and a color filter 16 described later. The refractive indexes of the adhesion layer 18 and the color filter 16 are both about 1.5. Therefore, in order to suppress the light reflection loss, the refractive index is about 1.5 in the region where the dense layer 17 and the adhesion layer 18 are in close contact, the region where the dense layer 17 and the color filter 16 are in close contact. This is effective for suppressing light reflection loss. On the other hand, silicon oxide can be used as a substance having a refractive index of about 1.5, but the gas barrier property of silicon oxide is lower than that of silicon nitride. Therefore, the region where the dense layer 17 and the adhesion layer 18 are in close contact, the region where the dense layer 17 and the color filter 16 are in close contact are made of silicon oxide, and the composition near the center of the dense layer 17 is changed to a composition close to silicon nitride. It is possible to form the dense layer 17 having a high gas barrier property. The dense layer 17 can be formed by controlling the oxygen partial pressure and the nitrogen partial pressure using the reactive sputtering method used for forming the protective layer 13. FIG. 6A shows a cross-sectional view after the steps so far are completed.

Next, the color filter 16 is pasted. Here, the light reflection loss when the nitrogen concentration is changed stepwise and when the nitrogen concentration is changed with a gradient represented by a continuous amount will be considered. The refractive index of the adhesion layer 18 as the layer La is Na, the refractive index of the color filter 16 as the layer Lb is Nb, and the refractive index in the region where the dense layer 17 as the layer Lc is in close contact with the adhesion layer 18 is NLa. The adhesion layer as the layer La when the refractive index in the region in close contact with NLb is NLb, the refractive index in the region with the highest nitrogen concentration is Nmax, and the nitrogen concentration is changed with a gradient represented by a continuous amount 18. Light reflection loss caused by passing through the dense layer 17 as the layer Lc and the color filter 16 as the layer Lb is (Na−NLa) ² / (Na + NLa) ² + (1− (Na−NLa) ^2. / (Na + NLa) ² ) × ((Nb−NLb) ² / (Nb + NLb) ² ). On the other hand, when the nitrogen concentration is changed stepwise, the light reflection loss is (Na−Nmax) ² / (Na + Nmax) ² + (1− (Na−Nmax) ² / (Na + Nmax) ² ) × ((Nb −Nmax) ² / (Nb + Nmax) ² ). Therefore, (Na—NLa) ² / (Na + NLa) ² + (1− (Na—NLa) ² / (Na + NLa) ² ) × ((Nb−NLb) ² / (Nb + NLb) ² ) ≧ (Na−Nmax) ² / (Na + Nmax) ² + (1− (Na−Nmax) ² / (Na + Nmax) ² ) × ((Nb−Nmax) ² / (Nb + Nmax) ² ), the nitrogen concentration is expressed as a continuous amount. By changing the gradient with the gradient, the light reflection loss due to the insertion of the dense layer 17 can be reduced as compared with the case where the nitrogen concentration is changed stepwise. Then, the organic EL device 1 including the three dot regions A _R , A _G , and A _B shown in FIG. 6B is formed by attaching the substrate body 15. Here, the step of attaching the color filter 16 may be performed in a state where the color filter 16 is attached to the substrate body 15. In this case, the color filter 16 having a low mechanical strength can be stably attached. Further, an adhesive layer using an epoxy resin or the like may be interposed between the color filter 16 and the dense layer 17. In this case, the adhesion between the color filter 16 and the dense layer 17 can be improved.

  In the present embodiment, an example in which the protective layer 13 and the dense layer 17 are provided has been described. However, the dense layer 17 is not necessarily required and can be omitted. In this case, the manufacturing process can be shortened. Further, another layer such as a flattening layer for flattening a step may be inserted between the dense layer 17 and the color filter 16, and in this case, between the color filter 16 and the dense layer 17. It becomes possible to improve the adhesiveness.

(Fourth Embodiment: Electronic Device)
Next, an electro-optical device using the above configuration will be described. FIGS. 8A to 8C are perspective views of an electro-optical device including the organic EL device 1 described above, and will be described below with reference to this drawing. FIG. 8A shows the configuration of a mobile personal computer 2000 provided with the organic EL device 1. The personal computer 2000 includes the organic EL device 1 and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002. FIG. 8B shows a configuration of a mobile phone provided with the organic EL device 1. The cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and the organic EL device 1 as a display unit. By operating the scroll button 3002, the screen displayed on the organic EL device 1 is scrolled. FIG. 8C shows the configuration of a personal digital assistant PDA (Personal Digital Assistants) provided with the organic EL device 1. The information portable terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and the organic EL device 1 as a display unit. When the power switch 4002 is operated, various types of information such as an address book and a schedule book are displayed on the organic EL device 1.

  Electronic devices on which the organic EL device 1 is mounted include those shown in FIGS. 8A to 8C, a digital still camera, a liquid crystal television, a viewfinder type, a monitor direct view type video tape recorder, a car navigation system. Examples of the apparatus include a device, a pager, an electronic notebook, a calculator, a word processor, a workstation, a videophone, a POS terminal, and a touch panel. And the organic electroluminescent apparatus 1 mentioned above is applicable as a display part of these various electronic devices.

1 is a schematic configuration diagram of an organic EL device as an electro-optical device according to a first embodiment. (A) is a plan view showing three dot areas corresponding to the respective colors of red (R), green (G), and blue (B) in the first embodiment, and (b) is a dot area in the first embodiment. Sectional drawing which follows EE 'line of (c), (c) is an expanded sectional view of the area | region containing the protective layer in 1st Embodiment. FIG. 10 is a schematic configuration diagram of an organic EL device as an electro-optical device according to a second embodiment. (A) is a plan view showing three dot areas corresponding to the respective colors of red (R), green (G), and blue (B) in the second embodiment, and (b) is a dot area in the second embodiment. Sectional drawing in alignment with the EE 'line | wire, (c) is an expanded sectional view of the area | region containing the dense layer in 2nd Embodiment. (A)-(c) is a schematic cross section for demonstrating the manufacturing process concerning 3rd Embodiment. (A), (b) is a schematic cross section for demonstrating the manufacturing process concerning 3rd Embodiment. The schematic cross section of a reactive sputtering device. FIGS. 3A to 3C are perspective views of an electro-optical device including an organic EL device. FIGS.

Explanation of symbols

  A ... dot region, 1 ... organic EL device, 4a ... first substrate, 4b ... second substrate, 10 ... substrate body, 11 ... light emitting layer, 12 ... counter electrode, 12a ... electrode body portion, 12b ... auxiliary electrode, 13 DESCRIPTION OF SYMBOLS ... Protective layer, 14 ... Circuit element part, 15 ... Substrate body, 16 ... Color filter, 17 ... Dense layer, 18 ... Adhesion layer, 101 ... Scanning line, 102 ... Signal line, 103 ... Common feed line, 110 ... Organic function 111, pixel electrode, 112, partition wall, 112H, opening, 122, first thin film transistor, 123, second thin film transistor, 126, reflective layer, 144b, interlayer insulating layer, 144c, interlayer insulating layer, 200, reaction Reactive sputtering apparatus, 201 ... plasma generation chamber, 202 ... exhaust system, 203 ... magnetic field generation coil, 204 ... microwave introduction window, 205 ... plasma generation gas supply unit, 206 ... growth chamber, 07 ... Silicon target, 208 ... RF-DC power supply, 210 ... Reactive gas supply unit, 2000 ... Personal computer, 2001 ... Power switch, 2002 ... Keyboard, 2010 ... Main part, 3000 ... Mobile phone, 3001 ... Operation buttons, 3002 ... Scroll button, 4000 ... information portable terminal, 4001 ... operation button, 4002 ... power switch.

Claims (11)

A light emitting element that emits light;
A layer La having a refractive index Na, disposed in the optical path of the light emitting element;
A layer Lb having a refractive index Nb, which is disposed in an optical path of the light emitting element and is located in a region sandwiching the layer La in cooperation with the light emitting element;
A layer Lc disposed in the optical path of the light emitting element and positioned between the layer La and the layer Lb,
The refractive index of the layer Lc continuously changes with respect to the traveling direction of light, and the refractive index of the layer Lc includes a refractive index NLa in a region in close contact with the layer La, and the layer Lb. The value of the refractive index NLb in the close region is at least part of the wavelength of the light emitted by the light emitting element.
(Na—Nb) ² / (Na + Nb) ² ≧ (Na—NLa) ² / (Na + NLa) ² + (1− (Na—NLa) ² / (Na + NLa) ² ) × (Nb−NLb) ² / (Nb + NLb) ²
An electro-optical device characterized by satisfying the formula:   2. The electro-optical device according to claim 1, wherein the composition of the substance constituting the layer Lc is continuously changed with respect to the traveling direction of light. .   3. The electro-optical device according to claim 2, wherein the layer Lc is made of a material having a higher gas barrier property than at least one of the layer La and the layer Lb. Optical device.   The electro-optical device according to claim 1, wherein the light emitting element is an organic EL (electroluminescence) element.   5. The electro-optical device according to claim 4, wherein at least one of silicon nitride, silicon oxide, or silicon oxynitride is used as a material constituting the layer Lc, and the composition of the layer Lc is the progression of light. An electro-optical device, wherein the amount of nitrogen continuously changes with respect to the direction.   6. The electro-optical device according to claim 5, wherein the layer Lc is in close contact with an organic material layer having a Young's modulus lower than that of the layer Lc on at least one side. A light emitting element that emits light;
A layer La having a refractive index Na, disposed in the optical path of the light emitting element;
A layer Lb having a refractive index Nb, which is disposed in an optical path of the light emitting element and is located in a region sandwiching the layer La in cooperation with the light emitting element;
A layer Lc that is disposed in the optical path of the light emitting element and is located between the layer La and the layer Lb and includes at least one of silicon nitride or silicon nitride oxide as a constituent material;
The nitrogen content having a positive correlation with the refractive index of the layer Lc continuously changes with respect to the light traveling direction, and the refractive index of the region in close contact with the layer La is NLa, and the layer Lb is in close contact with the layer Lb. When the refractive index of the region having the maximum nitrogen concentration of the layer Lc is Nmax, the refractive index of the region having the maximum nitrogen concentration of the layer Lc is Nmax.
(Na-NLa) ² / (Na + NLa) ² + (1- (Na-NLa) ² / (Na + NLa) ² ) × ((Nb-NLb) ² / (Nb + NLb) ² ) ≧ (Na−Nmax) ² / ( Na + Nmax) ² + (1− (Na−Nmax) ² / (Na + Nmax) ² ) × ((Nb−Nmax) ² / (Nb + Nmax) ² )
An electro-optical device characterized by satisfying the formula: Producing a layer La having a refractive index Na disposed in an optical path of a light emitting element that emits light;
Forming a layer Lc in close contact with the layer La, having a refractive index NLa on the layer La side, and having a refractive index NLb in a region facing the layer La;
Forming a layer Lb and a layer Lb having a refractive index Nb that is in close contact with the layer Lc on a surface facing the layer Lc.
The refractive index of the layer Lc changes continuously with respect to the light traveling direction, and the refractive index of the layer Lc is in contact with the refractive index NLa in the region in contact with the layer La and the layer Lb. For the refractive index NLb in the region, for at least some wavelengths of the light emitted by the light emitting element,
(Na—Nb) ² / (Na + Nb) ² ≧ (Na—NLa) ² / (Na + NLa) ² + (1− (Na—NLa) ² / (Na + NLa) ² ) × (Nb−NLb) ² / (Nb + NLb) ²
An electro-optical device manufacturing method characterized by satisfying the formula: Producing a layer La having a refractive index Na disposed in an optical path of a light emitting element that emits light;
Forming a layer Lc in close contact with the layer La, having a refractive index NLa on the layer La side, and having a refractive index NLb in a region facing the layer La;
Forming a layer Lb and a layer Lb having a refractive index Nb that is in close contact with the layer Lc on a surface facing the layer Lc.
The nitrogen content of the layer Lc is continuously changing with respect to the light traveling direction, the refractive index of the region in close contact with the layer La is NLa, the refractive index of the region in close contact with the layer Lb is NLb, When the refractive index of the region having the maximum nitrogen concentration of the layer Lc is Nmax, with respect to at least a part of the wavelength of the light emitted by the light emitting element,
(Na-NLa) ² / (Na + NLa) ² + (1- (Na-NLa) ² / (Na + NLa) ² ) × ((Nb-NLb) ² / (Nb + NLb) ² ) ≧ (Na−Nmax) ² / ( Na + Nmax) ² + (1− (Na−Nmax) ² / (Na + Nmax) ² ) × ((Nb−Nmax) ² / (Nb + Nmax) ² )
An electro-optical device manufacturing method characterized by satisfying the formula:   10. The method of manufacturing an electro-optical device according to claim 8, wherein at least one of silicon nitride, silicon oxide, or silicon nitride oxide is used as a material constituting the layer Lc, By continuously changing the partial pressure ratio of oxygen and nitrogen in a mixed gas of oxygen and nitrogen (including the case where one of them is 0) using a sputtering method targeting silicon, silicon nitride, silicon oxide, or A method of manufacturing an electro-optical device, wherein the composition of silicon nitride oxide is continuously changed.   An electronic apparatus comprising the electro-optical device according to claim 1.

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