JP2009048148A - Polarizer using base material for forming rugged structural body having periodicity - Google Patents
Polarizer using base material for forming rugged structural body having periodicity Download PDFInfo
- Publication number
- JP2009048148A JP2009048148A JP2007216833A JP2007216833A JP2009048148A JP 2009048148 A JP2009048148 A JP 2009048148A JP 2007216833 A JP2007216833 A JP 2007216833A JP 2007216833 A JP2007216833 A JP 2007216833A JP 2009048148 A JP2009048148 A JP 2009048148A
- Authority
- JP
- Japan
- Prior art keywords
- height
- concavo
- base material
- uneven
- periodic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000004038 photonic crystal Substances 0.000 claims abstract description 22
- 230000000737 periodic effect Effects 0.000 claims description 78
- 239000002184 metal Substances 0.000 claims description 15
- 150000004703 alkoxides Chemical class 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 abstract description 34
- 238000000034 method Methods 0.000 abstract description 21
- 230000015572 biosynthetic process Effects 0.000 description 41
- 238000002834 transmittance Methods 0.000 description 16
- 230000007547 defect Effects 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000010367 cloning Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- -1 tetraethoxylane Chemical compound 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3083—Birefringent or phase retarding elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133528—Polarisers
- G02F1/133533—Colour selective polarisers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/32—Photonic crystals
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Polarising Elements (AREA)
- Liquid Crystal (AREA)
Abstract
Description
本発明は、多層周期凹凸構造を有するフォトニック結晶構造体である偏光子に関する。 The present invention relates to a polarizer which is a photonic crystal structure having a multilayer periodic uneven structure.
フォトニック結晶は、光の波長程度の周期で屈折率を変化させた構造体で、それにより光の特性を意図的に変えることができる。フォトニック結晶に光を入射させたときに得られる特性の一つとして偏光特性が挙げられ、その性質を利用したものとして偏光子がある。偏光子は特定の伝播方向の光のみを透過させる素子で、液晶ディスプレイなどに使用されている。 A photonic crystal is a structure in which the refractive index is changed at a period of about the wavelength of light, and thereby the characteristics of light can be changed intentionally. One of the characteristics obtained when light is incident on the photonic crystal is a polarization characteristic, and a polarizer is one that utilizes this characteristic. A polarizer is an element that transmits only light in a specific propagation direction, and is used in a liquid crystal display or the like.
フォトニック結晶を作製する手段の一つとして、スパッタリングによる成膜とバイアスエッチングを組み合わせた自己クローニング法と呼ばれる方法がある(特許文献1)。この方法では、基材に屈折率の異なる材料を交互に積層することで、2次元または3次元の多層周期凹凸構造体を作製することができる。この方法でフォトニック結晶を作製する場合、成膜時に凹凸形状を追随させる周期性を有する凹凸構造体を形成した基材が必要となる。その基材を作製する手段としてはフォトリソグラフィ技術とエッチング技術が用いられる。 As one of means for producing a photonic crystal, there is a method called a self-cloning method in which film formation by sputtering and bias etching are combined (Patent Document 1). In this method, a two-dimensional or three-dimensional multilayer periodic concavo-convex structure can be produced by alternately laminating materials having different refractive indexes on a substrate. When producing a photonic crystal by this method, a base material on which a concavo-convex structure having periodicity that follows the concavo-convex shape during film formation is required. Photolithographic techniques and etching techniques are used as means for producing the substrate.
またインプリント技術により樹脂の凹凸形状層を平板状基板表面に作製することで基材の周期凹凸構造を形成する手法がある(特許文献2)。これは金型に樹脂を流し込み、硬化、離型することで、平板状基板表面に樹脂の凹凸構造を作製する技術で、金型からの転写を繰り返し行うことにより、加工コスト、加工時間を抑えることができる。
従来の技術では、設計値どおりの光学特性を有する偏光子を作製することは、多層周期構造体を作製するための理想的な基材の形状が不明であるために困難であった。特に基材に多層成膜する過程で形状が十分に追随しないことが光学特性を劣化させる主要因となっていた。設計値どおりの光学特性を有するフォトニック結晶の作製を可能とする好適な凹凸形状を有する基材が望まれていた。 In the prior art, it has been difficult to produce a polarizer having optical characteristics as designed because the shape of an ideal base material for producing a multilayer periodic structure is unknown. In particular, in the process of forming a multilayer film on a base material, the shape does not sufficiently follow up has been a main factor for deteriorating optical characteristics. There has been a demand for a substrate having a suitable concavo-convex shape capable of producing a photonic crystal having optical characteristics as designed.
本発明は、基材上に、屈折率の互いに異なる2種類以上の層で形成される多層膜を備えるフォトニック結晶構造体において、平板状基板に周期性を有する凹凸構造体を形成した基材であって、前記凹凸構造体の主成分がSiO2であり、前記平板状基板の平面方向に平行に、互いに直交するx軸、y軸をとり、平面方向に垂直にz軸をとる場合に、x軸方向には凹凸構造が周期性を有し、y軸方向には凹凸構造が一様であり、前記周期性の周期間隔が80〜450nmであり、凹凸構造のz軸方向の高さが、前記周期間隔に対して、0.25〜0.75倍の範囲であり、前記高さのばらつきが、前記高さの平均hに対して、0.14h以下である基材を用いることを特徴とする偏光子である。この特徴により、基材上に屈折率の互いに異なる2種類以上の層で形成される多層膜を備えるフォトニック結晶構造体の作成において、多層成膜する際の形状劣化を抑え、設計値どおりの光学特性を有する偏光子を作製することが可能となる。 The present invention relates to a photonic crystal structure comprising a multilayer film formed of two or more layers having different refractive indexes on a base material, and a base material in which a concavo-convex structure having periodicity is formed on a flat substrate. In the case where the main component of the concavo-convex structure is SiO 2 , the x-axis and y-axis are orthogonal to each other in parallel to the planar direction of the flat substrate, and the z-axis is perpendicular to the planar direction. The concavo-convex structure has periodicity in the x-axis direction, the concavo-convex structure is uniform in the y-axis direction, the periodic interval of the periodicity is 80 to 450 nm, and the height of the concavo-convex structure in the z-axis direction. Is a range of 0.25 to 0.75 times the periodic interval, and the substrate has a height variation of 0.14 h or less with respect to the average height h. It is a polarizer characterized by. Due to this feature, in the creation of a photonic crystal structure comprising a multilayer film formed of two or more layers having different refractive indexes on a substrate, shape deterioration during multilayer film formation is suppressed, and as designed. A polarizer having optical characteristics can be manufactured.
また本発明は、前記x軸とz軸で形成されるxz断面の形状が、周期性を有する三角形状であることを特徴とする前記基材を用いた偏光子である。この特徴により、異なる2種類以上の層からなるフォトニック結晶構造体を形成する際に、損失なく正確な三角形状の層を積層され、設計どおりの光学特性を得ることが可能になる。 Further, the present invention is the polarizer using the base material, wherein the shape of the xz section formed by the x axis and the z axis is a triangular shape having periodicity. With this feature, when forming a photonic crystal structure composed of two or more different types of layers, accurate triangular layers can be laminated without loss, and optical characteristics as designed can be obtained.
さらにまた本発明は、前記凹凸構造体の凹部から前記平板状基板表面までの距離が、前記hに対して、4h以下、かつ500nm以下であることを特徴とする前記基材を用いた偏光子である。この特徴により、凹凸形状のz方向の歪みを最小限に抑えることができ、また、凹凸形状の高さのばらつきの発生を容易に0.14h以内に抑制することが可能になる。 Furthermore, the present invention provides the polarizer using the base material, wherein a distance from the concave portion of the concavo-convex structure to the flat substrate surface is 4 h or less and 500 nm or less with respect to h. It is. With this feature, it is possible to minimize the distortion in the z-direction of the concavo-convex shape, and it is possible to easily suppress the variation in the height of the concavo-convex shape within 0.14 h.
さらにまた本発明は、前記凹凸構造体が、金属アルコキシド硬化物を主成分とすることを特徴とする前記基材を用いた偏光子である。この特徴により、前記基材をインプリントプロセスで容易に作成することができる。 Furthermore, the present invention is the polarizer using the substrate, wherein the concavo-convex structure has a metal alkoxide cured product as a main component. Due to this feature, the substrate can be easily produced by an imprint process.
本発明によれば、欠陥の少ない多層周期凹凸構造体を作製することが基材の周期凹凸形状を規定することによって可能となり、設計どおりの光学特性を有するフォトニック結晶の作製が可能となる。 According to the present invention, it is possible to produce a multilayer periodic concavo-convex structure with few defects by defining the periodic concavo-convex shape of the substrate, and it is possible to produce a photonic crystal having optical characteristics as designed.
本発明を実施するための最良の形態を示す。 1 shows the best mode for carrying out the present invention.
本発明の基材の周期凹凸構造体は平板状基板表面に形成される。平板状基板に平行で互いに直交するx軸とy軸を取り、基板表面に直交するようにz軸を取ったとき、平板状基板表面には、y軸に平行でx軸方向に一定周期をもつ直線状の凹凸構造体が形成される。その凹凸周期は80nm以上であることが好ましい。これは周期が80nmより小さくなると、リソグラフィ技術によって形状を描画すること事体が困難になるためである。また、インプリントプロセスを用いて作製しようとした場合には80nm以下であると転写性の面で十分な形状確保が困難になると考えられる。 The periodic concavo-convex structure of the base material of the present invention is formed on the surface of the flat substrate. When the x-axis and y-axis are parallel to the flat substrate and orthogonal to each other, and the z-axis is orthogonal to the substrate surface, the flat substrate surface has a constant period in the x-axis direction parallel to the y-axis. A linear concavo-convex structure is formed. The uneven period is preferably 80 nm or more. This is because if the period is smaller than 80 nm, it is difficult to draw a shape by lithography technology. Moreover, when it is going to produce using an imprint process, when it is 80 nm or less, it will be difficult to ensure sufficient shape in terms of transferability.
一方、周期が大きくなるとそれに伴って十分な凹凸高さが必要になるが、凹凸高さが大きくなると膜厚、形状そのものの制御が困難になることから、周期は450nm以下に抑える必要がある。以上のことから凹凸周期は80〜450nmの範囲が好ましいが、120〜300nmの範囲であるとさらに良く、140〜250nmの範囲であれば最も理想的である。 On the other hand, when the period is increased, a sufficient uneven height is required. However, since the control of the film thickness and the shape itself becomes difficult when the uneven height is increased, the period needs to be suppressed to 450 nm or less. From the above, the concave / convex period is preferably in the range of 80 to 450 nm, more preferably in the range of 120 to 300 nm, and most preferably in the range of 140 to 250 nm.
凹凸形状の高さは周期に対して0.2倍以上であることが望ましく、より正確に多層周期凹凸構造体を作製するためには周期に対して0.25倍以上の高さが必要である。これは周期に対する凹凸形状の高さが低い場合には多層成膜していく過程において、十分な形状追随がなされずに徐々に凹凸が平坦になってしまうためである。 The height of the concavo-convex shape is desirably 0.2 times or more with respect to the period, and in order to manufacture a multilayer periodic concavo-convex structure more accurately, a height of 0.25 or more with respect to the period is necessary. is there. This is because when the height of the concavo-convex shape with respect to the period is low, the concavo-convex shape gradually becomes flat without sufficient shape following in the process of forming the multilayer film.
一方、周期に対して高さが大きいものは、成膜時に形状の歪みが生じやすくなるため、凹凸形状の高さは周期に対して0.75倍までに抑える必要がある。以上のことから凹凸形状の高さは周期に対して0.25〜0.75倍であることが必要であるが、0.3〜0.6倍の範囲に入っているとより好ましく、0.35〜0.5倍の範囲に入っているとさらに好ましい。この場合の高さはSEM(走査型電子顕微鏡)により測定を行って得られた高さの平均を用いて表したものである。その測定方法は以下の通りである。 On the other hand, when the height is high with respect to the period, the shape is likely to be distorted during film formation. Therefore, it is necessary to suppress the height of the uneven shape to 0.75 times the period. From the above, the height of the concavo-convex shape needs to be 0.25 to 0.75 times the period, but is more preferably in the range of 0.3 to 0.6 times, 0 More preferably, it is in the range of 35 to 0.5 times. The height in this case is expressed using the average of the heights obtained by measuring with an SEM (scanning electron microscope). The measuring method is as follows.
基材をxz平面で切断し、その断面の凹凸形状をSEMにより観察してその高さを測定する。その際、隣り合う凹部最底部と凸部最頂点部の高さの差を求め、得られた差について少なくとも20以上の連続する凹凸形状の高さデータをとって平均化し、その箇所近傍の凹凸形状の高さと定義する。 A base material is cut | disconnected by xz plane, the uneven | corrugated shape of the cross section is observed by SEM, and the height is measured. At that time, the difference between the heights of the adjacent concave bottom part and convex top part is obtained, and the obtained difference is averaged by taking the height data of at least 20 continuous concave and convex shapes, and the concave and convex parts in the vicinity of the part. It is defined as the height of the shape.
フォトニック結晶を作製するための基材を作製する際に重要なこととして、凹凸構造の高さばらつきを抑えることが挙げられる。高さが均一でない場合には、高さが十分でない場合と同様に多層成膜時に周期構造の乱れや平坦化が発生する。ここで、高さを求めるときに使用した2次元xz平面データから、凹凸高さhをそれぞれ隣り合う凹部底部と凸部頂点部の差から求めたときに、その標準偏差をばらつきと定義する。このばらつきは少なくとも20以上の連続する凹凸形状の高さデータから求める。このばらつきを0.14h以下に抑えたときに成膜後に欠陥の発生を十分に抑えることができる。部分的に0.14hを超えるばらつきのある箇所とない箇所が混在している場合には、多層成膜時にばらつきのある箇所に欠陥が生じる。このばらつきは0.1h以下であるとさらに好ましく、0.08h以下であることがよりいっそう好ましい。 When producing a substrate for producing a photonic crystal, it is important to suppress variations in the height of the concavo-convex structure. When the height is not uniform, the periodic structure is disturbed or flattened during the multilayer film formation as in the case where the height is not sufficient. Here, when the uneven height h is obtained from the difference between the adjacent concave bottom and convex top from the two-dimensional xz plane data used for obtaining the height, the standard deviation is defined as variation. This variation is obtained from height data of at least 20 continuous uneven shapes. When this variation is suppressed to 0.14 h or less, generation of defects can be sufficiently suppressed after film formation. In the case where a portion having a variation exceeding 0.14h and a portion having no variation are mixed, a defect occurs in a portion having a variation during multilayer film formation. This variation is more preferably 0.1 h or less, and even more preferably 0.08 h or less.
スパッタ成膜とバイアスエッチングを組み合わせて多層成膜した周期凹凸構造体のxz平面で切断した断面は、三角形が連続した形状となる。基材の周期凹凸構造が三角形状でない場合にも、成膜過程で変形、整形されて三角形状となる。基材の凹凸周期を成膜時に追随させるためには、基材の断面形状は三角形状(図1)、矩形(図2)、台形形状、サインカーブ形状のいずれかもしくはそれに類似した形状が好ましい。例えば矩形形状の基材に多層成膜した場合には、形成される各層の断面形状は成膜過程において徐々に矩形から三角形状へと変形する。しかし設計どおりの光学特性を得るためには、損失なく正確な三角形状を成膜過程において積層する必要があるため、基材の周期凹凸形状は三角形状が連続したものであることが最も好ましい。 The cross section cut along the xz plane of the periodic concavo-convex structure formed by multilayer film formation by combining sputter deposition and bias etching has a continuous triangle shape. Even when the periodic concavo-convex structure of the substrate is not triangular, it is deformed and shaped in the film formation process to become triangular. In order to follow the concave-convex period of the base material during film formation, the cross-sectional shape of the base material is preferably a triangular shape (FIG. 1), a rectangular shape (FIG. 2), a trapezoidal shape, a sine curve shape, or a similar shape. . For example, when a multilayer film is formed on a rectangular substrate, the cross-sectional shape of each layer formed gradually changes from a rectangle to a triangle during the film formation process. However, in order to obtain optical characteristics as designed, it is necessary to stack accurate triangular shapes without loss in the film forming process. Therefore, it is most preferable that the periodic uneven shape of the base material is a continuous triangular shape.
また、基材の凹凸形状が三角形状であることは、その基材をインプリントプロセスによって作製する場合にも好ましい。その理由として、三角形状であれば転写する際に型の凹部深くまで材料が十分に入り込みやすいこと、また三角形状の表面は離型の際に基板平坦面に対して斜め方向に生じる負荷に強いことが挙げられる。基材の断面形状を三角形状に形成することによって、インプリントプロセスによって基材を作製する際の高さのばらつきの発生を0.14h以内に抑制することが可能になる。 Moreover, it is preferable that the uneven | corrugated shape of a base material is a triangle shape also when producing the base material by an imprint process. The reason for this is that if the shape is triangular, the material can easily penetrate deeply into the concave portion of the mold when transferring, and the triangular surface is resistant to the load that occurs obliquely with respect to the flat surface of the substrate during mold release. Can be mentioned. By forming the cross-sectional shape of the base material in a triangular shape, it is possible to suppress the occurrence of variations in height when the base material is manufactured by the imprint process within 0.14 h.
基材の周期凹凸形状の凹部から平板状基板表面までの距離は4h以下かつ500nm以下に抑えられていることが好ましい。これは膜の厚みが薄いほど、z方向における凹凸形状の歪みを最小限に抑えることができるからである。また、基材の周期凹凸形状の凹部から平板基板表面までの距離を上記範囲内に抑えることにより、凹凸形状の高さのばらつきの発生を0.14h以内に抑制することが容易になる。 It is preferable that the distance from the concave-convex concave portion of the base material to the flat substrate surface is suppressed to 4 h or less and 500 nm or less. This is because the distortion of the uneven shape in the z direction can be minimized as the thickness of the film is thinner. In addition, by suppressing the distance from the concave and convex portions of the periodic uneven shape of the base material to the flat substrate surface within the above range, it becomes easy to suppress the occurrence of unevenness in the height of the uneven shape within 0.14 h.
基材をインプリントプロセスで作製する際に用いる材料は、金属アルコキシド硬化物が好ましい。金属アルコキシド硬化物からなる凹凸構造体は、金属アルコキシド含有液を用いたインプリントプロセスにより作製される。その方法は以下の通りである。
(1)平板状基板表面に金属アルコキシド含有液を塗布する工程
(2)金属アルコキシド含有液塗布基板に成形型を押し当てる工程
(3)成形型を押し当てた状態で金属アルコキシド含有液塗布基板を加熱して金属アルコ
キシド含有液を硬化し、成形型から形状の転写を行う工程
(4)金属アルコキシド硬化物層が形成された平板基板を成形型から引き剥がす工程
(5)金属アルコキシド硬化物層が形成された平板基板を加熱焼成する工程
この材料を用いることで低温でも容易にSiO2を主成分とする周期凹凸形状を形成した基材を作製することができる。作製した基材は耐熱性に優れているため成膜時にも形状が歪むことなく形状追随性のよい多層成膜構造体の作製が可能となる。
The material used when producing the substrate by the imprint process is preferably a metal alkoxide cured product. The concavo-convex structure made of a metal alkoxide cured product is produced by an imprint process using a metal alkoxide-containing liquid. The method is as follows.
(1) A step of applying a metal alkoxide-containing liquid to the surface of a flat substrate (2) A step of pressing a molding die against the metal alkoxide-containing liquid coating substrate (3) A metal alkoxide-containing liquid coating substrate in a state of pressing the molding die Heated metal arco
The step of curing the oxide containing liquid and transferring the shape from the mold (4) The step of peeling off the flat substrate on which the metal alkoxide cured product layer is formed from the mold (5) The flat plate on which the metal alkoxide cured product layer is formed Step of Heating and Firing Substrate By using this material, it is possible to easily produce a base material having a periodic concavo-convex shape mainly composed of SiO 2 even at a low temperature. Since the produced base material is excellent in heat resistance, it is possible to produce a multilayer film-forming structure having good shape followability without distortion in shape even during film formation.
金属アルコキシド含有液を塗布する工程においては、その塗布量の制御が重要になる。金属アルコキシド含有液の塗布量は、同材料塗布基板をそのまま焼成した際に得られる膜厚が、500nm以下であるようにすることが好ましい。これは、膜厚が500nmを超えると、インプリントする際のゲル化反応により揮発した水分が凹凸形状表面に残って、成膜時に異常成長の原因となるような欠陥を発生させるためである。また成形型を押し当てて作製した周期凹凸構造の形状凹部から平板状基板表面までの距離が500nm以下であれば、金属アルコキシド硬化膜の厚み分布を均一にすることができる。 In the step of applying the metal alkoxide-containing liquid, it is important to control the coating amount. The coating amount of the metal alkoxide-containing liquid is preferably such that the film thickness obtained when the same material-coated substrate is baked as it is is 500 nm or less. This is because when the film thickness exceeds 500 nm, moisture volatilized by the gelation reaction during imprinting remains on the surface of the concavo-convex shape and causes defects that cause abnormal growth during film formation. Moreover, if the distance from the shape recessed part of the periodic uneven structure produced by pressing a shaping | molding die to the flat substrate surface is 500 nm or less, the thickness distribution of a metal alkoxide cured film can be made uniform.
塗布膜厚が薄すぎる場合には、基板と型の凸部が直接に接触して形状に歪みが生じたり、型の凹部に金属アルコキシド材料が十分に入り込まないなどの問題が発生することがある。そのため、塗布膜厚は50nm以上あることが好ましい。 If the coating film thickness is too thin, the substrate and the convex part of the mold may be in direct contact with each other, and the shape may be distorted or the metal alkoxide material may not sufficiently enter the concave part of the mold. . Therefore, the coating film thickness is preferably 50 nm or more.
前記範囲内の塗布膜厚であれば、結果として作製する周期凹凸構造の高さのばらつきを減らすことができる。さらに高さのばらつきを減らすためには、基材の周期凹凸形状の凹部から平板状基板表面までの距離が4h以内に抑えられていることが好ましい。 As long as the coating film thickness is within the above range, the variation in the height of the periodic concavo-convex structure to be produced can be reduced. In order to further reduce the variation in height, it is preferable that the distance from the concave and convex portions of the substrate to the flat substrate surface is suppressed within 4 h.
以下に本発明の具体的な実施例を示す。 Specific examples of the present invention are shown below.
周期200nmで凹凸形状の高さが77nm、断面形状が三角形状である凹凸構造体を成形型として用意した。メチルトリエトキシシランとテトラエトキシラン、エタノール、酸水溶液を混合させた溶液を作製し、スピンコーティングにより平板状基板上に塗布を行った。その際の塗布量は、そのまま160℃で焼成した際に90nmの膜厚みになるような条件であった。次にその塗布基板上に上記成形型を2.55MPa(26kg/cm2)の圧力で押し当てた。その後、温度を60℃に30分間保持して材料を硬化させ、離型を行い、300℃で30分間焼成を行った。その結果得られた基材の周期凹凸形状は高さが74nmで高さのばらつきは6nm、凹凸形状凹部から基板表面までの距離は45nmであった。 A concavo-convex structure having a period of 200 nm, a concavo-convex height of 77 nm, and a cross-sectional shape of a triangular shape was prepared as a mold. A solution in which methyltriethoxysilane, tetraethoxylane, ethanol, and an acid aqueous solution were mixed was prepared and applied onto a flat substrate by spin coating. The coating amount at that time was such that the film thickness was 90 nm when baked at 160 ° C. as it was. Next, the mold was pressed onto the coated substrate at a pressure of 2.55 MPa (26 kg / cm 2 ). Thereafter, the temperature was maintained at 60 ° C. for 30 minutes to cure the material, release the mold, and calcination was performed at 300 ° C. for 30 minutes. As a result, the periodic uneven shape of the obtained base material had a height of 74 nm, a height variation of 6 nm, and the distance from the uneven shape concave portion to the substrate surface was 45 nm.
次にバイアススパッタリング法により上記の周期凹凸構造を有する基材に成膜を行い、450〜500nmの波長範囲において偏光子としての機能を有する多層周期凹凸構造体(フォトニック結晶)の作製を試みた。SiO2ターゲットとTaターゲットを用い、Arガス雰囲気中でSiO2膜とTa2O5膜を交互に成膜した。その成膜においては、450nm〜500nmの波長範囲でTM偏光が90%以上透過し、TE偏光は膜表面で反射し0.5%以下の透過率になるように設計した結果から求めた必要膜総数を積層した。ここで、電界が溝に垂直に振動する偏光をTM偏光、電界が溝に平行に振動する偏光をTE偏光とする。成膜の結果得られた多層周期凹凸構造体は、SEM観察によりその表面で正確な周期構造が保たれていることが確認された。その光学特性は、450〜500nmの波長範囲においてTM偏光の透過率が92.6%、TE偏光の透過率が0.10%であった。これは偏光子としての機能を有することを示すものであり、この多層周期凹凸構造体がフォトニック結晶として機能するための構造を有することを示すものと考えられる。これらの結果から、基材の周期凹凸構造の高さ、高さのばらつき、凹凸形状凹部から基板表面までの距離について請求項の条件を満たしている場合には周期構造の乱れが少なく、光学特性を十分に満たした多層凹凸周期構造体である偏光子を作製可能であることが確認された。 Next, a film was formed on the base material having the periodic uneven structure by bias sputtering, and an attempt was made to produce a multilayer periodic uneven structure (photonic crystal) having a function as a polarizer in a wavelength range of 450 to 500 nm. . Using a SiO 2 target and a Ta target, SiO 2 films and Ta 2 O 5 films were alternately formed in an Ar gas atmosphere. In the film formation, the necessary film obtained from the result of designing so that TM polarized light is transmitted 90% or more in the wavelength range of 450 nm to 500 nm, and TE polarized light is reflected on the film surface and has a transmittance of 0.5% or less. The total number was laminated. Here, the polarized light whose electric field vibrates perpendicularly to the groove is TM polarized light, and the polarized light whose electric field vibrates parallel to the groove is TE polarized light. The multilayer periodic concavo-convex structure obtained as a result of film formation was confirmed to maintain an accurate periodic structure on the surface by SEM observation. As for the optical characteristics, the transmittance of TM polarized light was 92.6% and the transmittance of TE polarized light was 0.10% in the wavelength range of 450 to 500 nm. This indicates that it has a function as a polarizer, and that this multilayer periodic uneven structure has a structure for functioning as a photonic crystal. From these results, the periodic structure is less disturbed when the conditions of the claims are satisfied with respect to the height of the periodic concavo-convex structure of the substrate, the variation in height, and the distance from the concavo-convex shape concave portion to the substrate surface, and the optical characteristics It was confirmed that a polarizer which is a multilayer uneven periodic structure sufficiently satisfying the above can be produced.
周期が200nm、凹凸の高さ62nm、高さのばらつき7nm、凹凸形状凹部から基板表面までの距離180nm、断面形状が三角形状の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところ、その光学特性はTM偏光の透過率が91.4%、TE偏光の透過率が0.14%であった。これは偏光子としての機能を有しフォトニック結晶として十分な機能を満たしていると考えられる。この結果からも下地周期凹凸構造体が請求項の条件を満たしている場合には周期構造の乱れが少なく、光学特性を十分に満たした多層凹凸周期構造体である偏光子を作製可能であることが確認された。 The same conditions as in Example 1 were applied to a base material on which a periodic uneven structure having a period of 200 nm, an uneven height of 62 nm, a height variation of 7 nm, a distance from the uneven recess to the substrate surface of 180 nm, and a triangular sectional shape was formed. When multilayer film formation was performed by changing the total number of films, the optical properties were 91.4% for TM polarized light and 0.14% for TE polarized light. This is considered to have a function as a polarizer and satisfy a sufficient function as a photonic crystal. From these results, it is possible to produce a polarizer that is a multilayer concavo-convex periodic structure sufficiently satisfying optical characteristics when the underlying periodic concavo-convex structure satisfies the conditions of the claims with little disturbance of the periodic structure. Was confirmed.
周期が140nm、凹凸の高さ53nm、高さのばらつき6nm、凹凸形状凹部から基板表面までの距離45nm、断面形状が三角形状の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところ、その光学特性はTM偏光の透過率が91.7%、TE偏光の透過率が0.11%であった。これは偏光子としての機能を有することを示すものであり、この多層周期凹凸構造体がフォトニック結晶として機能するための構造を有することを示すものと考えられる。この結果からも下地周期凹凸構造体が請求項の条件を満たしている場合には周期構造の乱れが少なく、光学特性を十分に満たした多層凹凸周期構造体である偏光子を作製可能であることが確認された。 Under the same conditions as in Example 1 on a base material on which a periodic uneven structure having a period of 140 nm, an uneven height of 53 nm, a height variation of 6 nm, a distance from the uneven recess to the substrate surface of 45 nm, and a triangular sectional shape is formed. When multilayer film formation was performed by changing the total number of films, the optical properties of the TM polarized light were 91.7% and the TE polarized light was 0.11%. This indicates that it has a function as a polarizer, and that this multilayer periodic uneven structure has a structure for functioning as a photonic crystal. From these results, it is possible to produce a polarizer that is a multilayer concavo-convex periodic structure sufficiently satisfying optical characteristics when the underlying periodic concavo-convex structure satisfies the conditions of the claims with little disturbance of the periodic structure. Was confirmed.
周期が140nm、凹凸の高さ81nm、高さのばらつき9nm、凹凸形状凹部から基板表面までの距離20nm、断面形状が矩形の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところ、その光学特性はTM偏光の透過率が86.5%、TE偏光の透過率が0.11%であった。これは偏光子としての機能を有することを示すものであり、この多層周期凹凸構造体がフォトニック結晶として機能するための構造を有することを示すものと考えられる。この結果からも下地周期凹凸構造体が請求項の条件を満たしている場合には周期構造の乱れが少なく、光学特性を十分に満たした多層凹凸周期構造体である偏光子を作製可能であることが確認された。 A film having a period of 140 nm, an uneven height of 81 nm, a height variation of 9 nm, a distance of 20 nm from the uneven surface to the substrate surface, and a substrate having a periodic uneven structure with a rectangular cross-sectional shape, is formed under the same conditions as in Example 1. When the total number was changed, multilayer film formation was performed. As a result, the TM polarized light transmittance was 86.5%, and the TE polarized light transmittance was 0.11%. This indicates that it has a function as a polarizer, and that this multilayer periodic uneven structure has a structure for functioning as a photonic crystal. From this result, it is possible to produce a polarizer that is a multilayer rugged periodic structure with sufficient optical characteristics when the underlying periodic rugged structure satisfies the claims. Was confirmed.
周期が240nm、凹凸の高さ68nm、高さのばらつき8nm、凹凸形状凹部から基板表面までの距離110nm、断面形状が三角形状の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところ、その光学特性はTM偏光の透過率が90.4%、TE偏光の透過率が0.1%であった。これは偏光子としての機能を有することを示すものであり、この多層周期凹凸構造体がフォトニック結晶として機能するための構造を有することを示すものと考えられる。この結果からも下地周期凹凸構造体が請求項の条件を満たしている場合には周期構造の乱れが少なく、光学特性を十分に満たした多層凹凸周期構造体である偏光子を作製可能であることが確認された。 Under the same conditions as in Example 1, the substrate was formed with a periodic uneven structure having a period of 240 nm, an uneven height of 68 nm, a height variation of 8 nm, a distance of 110 nm from the uneven recess to the substrate surface, and a triangular cross-sectional shape. When multilayer film formation was performed by changing the total number of films, the optical properties were TM-polarized light transmittance of 90.4% and TE-polarized light transmittance of 0.1%. This indicates that it has a function as a polarizer, and that this multilayer periodic concavo-convex structure has a structure for functioning as a photonic crystal. From these results, it is possible to produce a polarizer that is a multilayer concavo-convex periodic structure sufficiently satisfying optical characteristics when the underlying periodic concavo-convex structure satisfies the conditions of the claims with little disturbance of the periodic structure. Was confirmed.
周期が240nm、凹凸の高さ89nm、高さのばらつき8nm、下地構造体の凹凸形状凹部から基板表面までの距離35nm、断面形状が三角形状の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところ、その光学特性はTM偏光の透過率が92.1%、TE偏光の透過率が0.10%であった。これは偏光子としての機能を有することを示すものであり、この多層周期凹凸構造体がフォトニック結晶として機能するための構造を有することを示すものと考えられる。この結果からも下地周期凹凸構造体が請求項の条件を満たしている場合には周期構造の乱れが少なく、光学特性を十分に満たした多層凹凸周期構造体である偏光子を作製可能であることが確認された。 Example 1 and Example 1 were formed on a substrate having a periodic uneven structure with a period of 240 nm, uneven height of 89 nm, height variation of 8 nm, a distance of 35 nm from the uneven shape concave portion of the underlying structure to the substrate surface, and a triangular cross-sectional shape. When the total number of films was changed under the same conditions to form a multilayer film, the optical properties were 92.1% for TM-polarized light and 0.10% for TE-polarized light. This indicates that it has a function as a polarizer, and that this multilayer periodic uneven structure has a structure for functioning as a photonic crystal. From these results, it is possible to produce a polarizer that is a multilayer concavo-convex periodic structure sufficiently satisfying optical characteristics when the underlying periodic concavo-convex structure satisfies the conditions of the claims with little disturbance of the periodic structure. Was confirmed.
周期が400nm、凹凸の高さ115nm、高さのばらつき14nm、凹凸形状凹部から基板表面までの距離230nm、断面形状が三角形状の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところ、その光学特性はTM偏光の透過率が87.7%、TE偏光の透過率が0.08%であった。これは偏光子としての機能を有することを示すものであり、この多層周期凹凸構造体がフォトニック結晶として機能するための構造を有することを示すものと考えられる。この結果からも下地周期凹凸構造体が請求項の条件を満たしている場合には周期構造の乱れが少なく、光学特性を十分に満たした多層凹凸周期構造体である偏光子を作製可能であることが確認された。 Under the same conditions as in Example 1 on a base material on which a periodic uneven structure having a period of 400 nm, an uneven height of 115 nm, a height variation of 14 nm, a distance from the uneven recess to the substrate surface of 230 nm, and a triangular sectional shape is formed. When multilayer film formation was performed by changing the total number of films, the optical properties were TM-polarized light transmittance of 87.7% and TE-polarized light transmittance of 0.08%. This indicates that it has a function as a polarizer, and that this multilayer periodic uneven structure has a structure for functioning as a photonic crystal. From these results, it is possible to produce a polarizer that is a multilayer concavo-convex periodic structure sufficiently satisfying optical characteristics when the underlying periodic concavo-convex structure satisfies the conditions of the claims with little disturbance of the periodic structure. Was confirmed.
(比較例1)
周期が200nm、凹凸の高さ58nm、高さのばらつき12nm、凹凸形状凹部から基板表面までの距離290nm、断面形状が三角形状の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところその光学特性はTM偏光の透過率が80.1%と低く、またTE偏光の透過率は0.11%であった。これは下地周期凹凸構造の凹部から平板状基板表面までの距離が凹凸高さ平均hに対して4h以上になってしまったために下地周期凹凸構造体の凹凸高さばらつきが12nmに増大したことが原因と考えられる。この結果から、凹凸高さばらつきは多層成膜時の形状追随性に大きな影響を与えており、本発明の寸法構造の条件を満たさない範囲では多層成膜時に欠陥が発生して光学特性が低下することが確認された。
(Comparative Example 1)
Under the same conditions as in Example 1 on a base material on which a periodic uneven structure having a period of 200 nm, an uneven height of 58 nm, a height variation of 12 nm, a distance from the uneven recess to the substrate surface of 290 nm, and a triangular sectional shape is formed When multilayer film formation was performed by changing the total number of films, the optical properties were as low as 80.1% for TM-polarized light and 0.11% for TE-polarized light. This is because the uneven height unevenness of the base periodic concavo-convex structure increased to 12 nm because the distance from the concave portion of the base periodic concavo-convex structure to the flat substrate surface was 4 h or more with respect to the average concavo-convex height h. Possible cause. From this result, unevenness height unevenness has a great influence on the shape followability at the time of multilayer film formation, and within the range not satisfying the dimensional structure conditions of the present invention, defects are generated at the time of multilayer film formation and the optical characteristics deteriorate. Confirmed to do.
(比較例2)
周期が200nm、凹凸の高さ37nm、高さのばらつき7nm、凹凸形状凹部から基板表面までの距離55nm、断面形状が三角形状の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところその光学特性はTM偏光の透過率が90.5%であったが、TE偏光の透過率は62.3%と非常に高くなってしまった。これは下地周期凹凸構造体の周期凹凸構造の凹凸高さが38nmと小さかったことが原因と考えられる。この結果から、凹凸高さばらつきは多層成膜時の形状追随性に大きな影響を与えており、本発明の寸法構造の条件を満たさない範囲では多層成膜時に欠陥が発生して光学特性が低下することが確認された。
(Comparative Example 2)
Under the same conditions as in Example 1 on a base material on which a periodic uneven structure having a period of 200 nm, an uneven height of 37 nm, a height variation of 7 nm, a distance from the uneven shape concave portion to the substrate surface of 55 nm, and a triangular sectional shape is formed. When multilayer film formation was performed with the total number of films changed, the optical property was 90.5% TM polarized light transmittance, but the TE polarized light transmittance was very high at 62.3%. . This is considered to be because the uneven height of the periodic uneven structure of the base periodic uneven structure was as small as 38 nm. From this result, unevenness height unevenness has a great influence on the shape followability at the time of multilayer film formation, and within the range not satisfying the dimensional structure conditions of the present invention, defects are generated at the time of multilayer film formation and the optical characteristics deteriorate. Confirmed to do.
(比較例3)
周期140nm、凹凸の高さ95nm、高さのばらつき17nm、凹凸形状凹部から基板表面までの距離430nm、断面形状が三角形状の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところその光学特性はTM偏光の透過率が76.6%と低く、またTE偏光の透過率は0.07%であった。これは下地周期凹凸構造体の周期凹凸構造の凹凸高さばらつきが17nmと大きかったことが原因と考えられる。この結果から、凹凸高さばらつきは多層成膜時の形状追随性に大きな影響を与えており、本発明の寸法構造の条件を満たさない範囲では多層成膜時に欠陥が発生して光学特性が低下することが確認された。
(Comparative Example 3)
A film having a period of 140 nm, an uneven height of 95 nm, a height variation of 17 nm, a distance from the uneven surface to the substrate surface of 430 nm, and a periodic uneven structure having a triangular cross-sectional shape is formed under the same conditions as in Example 1. When multilayer film formation was performed by changing the total number, the optical properties were as low as 76.6% for TM polarized light and 0.07% for TE polarized light. This is considered to be because the unevenness unevenness of the periodic uneven structure of the base periodic uneven structure was as large as 17 nm. From this result, unevenness height unevenness has a great influence on the shape followability at the time of multilayer film formation, and within the range not satisfying the dimensional structure conditions of the present invention, defects are generated at the time of multilayer film formation and the optical characteristics deteriorate. Confirmed to do.
(比較例4)
周期140nm、凹凸の高さ126nm、高さのばらつき16nm、凹凸形状凹部から基板表面までの距離45nm、断面形状が矩形の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところその光学特性はTM偏光の透過率が77.4%と低く、またTE偏光の透過率は0.12%であった。これは下地周期凹凸構造体の周期凹凸構造の凹凸高さが126nmと凹凸周期に対して非常に大きかったことが原因と考えられる。この結果から、凹凸高さばらつきは多層成膜時の形状追随性に大きな影響を与えており、本発明の寸法構造の条件を満たさない範囲では多層成膜時に欠陥が発生して光学特性が低下することが確認された。
(Comparative Example 4)
The total number of films under the same conditions as in Example 1 on a base material on which a periodic uneven structure having a period of 140 nm, uneven height of 126 nm, height variation of 16 nm, a distance of 45 nm from the uneven surface to the substrate surface, and a rectangular cross-sectional shape is formed. As a result of the multilayer film formation, the transmittance of TM polarized light was as low as 77.4%, and the transmittance of TE polarized light was 0.12%. This is presumably because the uneven height of the periodic uneven structure of the base periodic uneven structure was 126 nm, which was very large with respect to the uneven period. From this result, unevenness height unevenness has a great influence on the shape followability at the time of multilayer film formation, and within the range not satisfying the dimensional structure conditions of the present invention, defects are generated at the time of multilayer film formation and the optical characteristics deteriorate. Confirmed to do.
(比較例5)
周期240nm、凹凸の高さ85nm、高さのばらつき21nm、凹凸形状凹部から基板表面までの距離170nm、断面形状が三角形状の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところその光学特性はTM偏光の透過率が66.8%と低く、またTE偏光の透過率は0.12%であった。これは下地周期凹凸構造体の周期凹凸構造の凹凸高さばらつきが21nmと凹凸周期に対して非常に大きかったことが原因と考えられる。この結果から、凹凸高さばらつきは多層成膜時の形状追随性に大きな影響を与えており、本発明の寸法構造の条件を満たさない範囲では多層成膜時に欠陥が発生して光学特性が低下することが確認された。
(Comparative Example 5)
A film having a period of 240 nm, an uneven height of 85 nm, a height variation of 21 nm, a distance of 170 nm from the uneven surface to the substrate surface, and a periodic uneven structure having a triangular cross-section is formed under the same conditions as in Example 1. When multilayer film formation was performed by changing the total number, the transmittance of TM polarized light was as low as 66.8%, and the transmittance of TE polarized light was 0.12%. This is thought to be because the unevenness unevenness of the periodic uneven structure of the base periodic uneven structure was 21 nm, which was very large with respect to the uneven period. From this result, unevenness height unevenness has a great influence on the shape followability at the time of multilayer film formation, and within the range not satisfying the dimensional structure conditions of the present invention, defects are generated at the time of multilayer film formation and the optical characteristics deteriorate. Confirmed to do.
(比較例6)
周期400nm、凹凸の高さ103nm、高さのばらつき18nm、凹凸形状凹部から基板表面までの距離585nm、断面形状が三角形状の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところその光学特性はTM偏光の透過率が76.4%と低く、またTE偏光の透過率は0.10%であった。これは下地周期凹凸構造の凹部から平板状基板表面までの距離が凹凸高さが500nm以上になったことが影響し、下地周期凹凸構造体の凹凸高さばらつきが18nmまで増大したことが原因と考えられる。この結果から、凹凸高さばらつきは多層成膜時の形状追随性に大きな影響を与えており、本発明の寸法構造の条件を満たさない範囲では多層成膜時に欠陥が発生して光学特性が低下することが確認された。
(Comparative Example 6)
A film having a period of 400 nm, an uneven height of 103 nm, a height variation of 18 nm, a distance from the uneven surface to the substrate surface of 585 nm, and a base material on which a periodic uneven structure having a triangular cross-sectional shape is formed under the same conditions as in Example 1. When multilayer film formation was performed with the total number changed, the optical properties were as low as 76.4% for TM-polarized light and 0.10% for TE-polarized light. This is due to the fact that the distance from the concave portion of the base periodic concavo-convex structure to the surface of the flat substrate is affected by the uneven height being 500 nm or more, and the uneven height unevenness of the base periodic concavo-convex structure increased to 18 nm. Conceivable. From this result, unevenness height unevenness has a great influence on the shape followability at the time of multilayer film formation, and within the range not satisfying the dimensional structure conditions of the present invention, defects are generated at the time of multilayer film formation and the optical characteristics deteriorate. Confirmed to do.
(比較例7)
周期が400nm、凹凸の高さ68nm、高さのばらつき8nm、凹凸形状凹部から基板表面までの距離95nm、断面形状が三角形状の周期凹凸構造を形成した基材に実施例1と同様の条件で膜総数を変更して多層成膜を行ったところその光学特性はTM偏光の透過率が90.8%であったが、TE偏光の透過率は51.6%と非常に高くなってしまった。これは下地周期凹凸構造体の周期凹凸構造の凹凸高さが68nmと周期に対して非常に小さかったことが原因と考えられる。この結果から、凹凸高さばらつきは多層成膜時の形状追随性に大きな影響を与えており、本発明の寸法構造の条件を満たさない範囲では多層成膜時に欠陥が発生して光学特性が低下することが確認された。
(Comparative Example 7)
Under the same conditions as in Example 1 on a base material on which a periodic uneven structure having a period of 400 nm, an uneven height of 68 nm, a height variation of 8 nm, a distance of 95 nm from the uneven recess to the substrate surface, and a triangular cross-sectional shape is formed. When multilayer film formation was performed with the total number of films changed, the optical property was 90.8% for TM polarized light, but the transmittance for TE polarized light was very high at 51.6%. . This is presumably because the uneven height of the periodic uneven structure of the base periodic uneven structure was 68 nm, which was very small with respect to the period. From this result, unevenness height unevenness has a great influence on the shape followability at the time of multilayer film formation, and within the range not satisfying the dimensional structure conditions of the present invention, defects are generated at the time of multilayer film formation and the optical characteristics deteriorate. Confirmed to do.
以上の実施例、比較例を以下の表1にまとめて示す。表1の記載から、本発明の基材を用いることにより、設計した光学特性を示すフォトニック結晶である偏光子が作製可能であることがわかる。
The above Examples and Comparative Examples are summarized in Table 1 below. From the description in Table 1, it can be seen that by using the substrate of the present invention, a polarizer which is a photonic crystal exhibiting designed optical characteristics can be produced.
1 凹凸高さ
2 凹部からの距離
3 周期
4 下地周期凹凸構造
5 平板状基板
6 凹凸高さ
7 凹部からの距離
8 周期
9 下地周期凹凸構造
10 平板状基板
1 Unevenness height 2 Distance from recess 3 Period 4 Base period uneven structure
5 Flat substrate 6 Uneven height 7 Distance from recess 8
Claims (4)
The polarizer according to claim 1, wherein the concavo-convex structure has a metal alkoxide cured product as a main component.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007216833A JP2009048148A (en) | 2007-08-23 | 2007-08-23 | Polarizer using base material for forming rugged structural body having periodicity |
| PCT/JP2008/063529 WO2009025153A1 (en) | 2007-08-23 | 2008-07-28 | Polarizer using base on which ridge/groove structure with periodicity is formed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007216833A JP2009048148A (en) | 2007-08-23 | 2007-08-23 | Polarizer using base material for forming rugged structural body having periodicity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2009048148A true JP2009048148A (en) | 2009-03-05 |
Family
ID=40378061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007216833A Pending JP2009048148A (en) | 2007-08-23 | 2007-08-23 | Polarizer using base material for forming rugged structural body having periodicity |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2009048148A (en) |
| WO (1) | WO2009025153A1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000056133A (en) * | 1998-08-07 | 2000-02-25 | Shojiro Kawakami | Polarizer and its production |
| JP2001009843A (en) * | 1999-04-26 | 2001-01-16 | Nippon Sheet Glass Co Ltd | Mold, sol/gel composition using mold, and manufacture of sol/gel composition |
| JP2005181979A (en) * | 2003-11-28 | 2005-07-07 | Nippon Sheet Glass Co Ltd | Multilayer structure and its manufacturing method |
| JP2007011206A (en) * | 2005-07-04 | 2007-01-18 | Sanyo Electric Co Ltd | Element and method for manufacturing element |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005141003A (en) * | 2003-10-01 | 2005-06-02 | Photonic Lattice Inc | Short pulse light dispersion characteristics variable element |
| JP4438377B2 (en) * | 2003-10-27 | 2010-03-24 | セイコーエプソン株式会社 | Liquid crystal display device and electronic device |
| JP2007114375A (en) * | 2005-10-19 | 2007-05-10 | Ricoh Opt Ind Co Ltd | Light irradiation device, liquid crystal display device, and liquid crystal projection device |
-
2007
- 2007-08-23 JP JP2007216833A patent/JP2009048148A/en active Pending
-
2008
- 2008-07-28 WO PCT/JP2008/063529 patent/WO2009025153A1/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000056133A (en) * | 1998-08-07 | 2000-02-25 | Shojiro Kawakami | Polarizer and its production |
| JP2001009843A (en) * | 1999-04-26 | 2001-01-16 | Nippon Sheet Glass Co Ltd | Mold, sol/gel composition using mold, and manufacture of sol/gel composition |
| JP2005181979A (en) * | 2003-11-28 | 2005-07-07 | Nippon Sheet Glass Co Ltd | Multilayer structure and its manufacturing method |
| JP2007011206A (en) * | 2005-07-04 | 2007-01-18 | Sanyo Electric Co Ltd | Element and method for manufacturing element |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009025153A1 (en) | 2009-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102292472B (en) | Mold and manufacturing method therefor | |
| CN102084275B (en) | Wire grid type polarizer, and method for manufacturing the polarizer | |
| US8062915B2 (en) | Anti-reflective film and production method thereof, and stamper for producing anti-reflective film and production method thereof | |
| CN104781059B (en) | Mold for manufacturing optical element and production method for same, and optical element | |
| JP5309579B2 (en) | Resin molding die and method for manufacturing the same | |
| CN116256829A (en) | Preparation method of diffraction grating waveguide of near-eye display | |
| JP2011245816A5 (en) | ||
| CN101670629A (en) | Stamper for minute structure transfer and a method for manufacturing the same | |
| Verschuuren et al. | 3D photonic structures by sol-gel imprint lithography | |
| JPWO2010090268A1 (en) | Wire grid polarizer and method of manufacturing the same | |
| JPWO2012115059A1 (en) | Fine structure molded body and liquid crystal display device provided with the fine structure molded body | |
| US20140335215A1 (en) | Blank for nanoimprint mold, nanoimprint mold, and methods for producing said blank and said nanoimprint mold | |
| US7666492B2 (en) | Multilayer structure and method for manufacturing the same | |
| WO2014025318A1 (en) | Optical grating | |
| CN105467500A (en) | Wire grid polarizer, manufacturing method and display device | |
| JP6273860B2 (en) | Imprint mold and semiconductor device manufacturing method | |
| US9989687B2 (en) | Wave plate having consistent birefringence properties across the visible spectrum and manufacturing method for same | |
| WO2013145850A1 (en) | Diffraction grating and production method thereof | |
| CN105408265A (en) | Cylinder base material, original disk and method for manufacturing the original disk | |
| JP2014135313A (en) | Method for manufacturing imprint mold | |
| JP2011090141A (en) | Wire grid type polarizer and method for manufacturing the same | |
| JP2012028067A (en) | Organic light emitting diode element, image display device, and illumination device | |
| WO2017073370A1 (en) | Film mold and imprinting method | |
| JP2009048148A (en) | Polarizer using base material for forming rugged structural body having periodicity | |
| US20070076297A1 (en) | Transmission type optical element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100608 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120814 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20121211 |