JP2008504708A - 液浸フォトリソグラフィシステム - Google Patents
液浸フォトリソグラフィシステム Download PDFInfo
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- JP2008504708A JP2008504708A JP2007518676A JP2007518676A JP2008504708A JP 2008504708 A JP2008504708 A JP 2008504708A JP 2007518676 A JP2007518676 A JP 2007518676A JP 2007518676 A JP2007518676 A JP 2007518676A JP 2008504708 A JP2008504708 A JP 2008504708A
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- Prior art keywords
- fluid
- immersion
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- lens
- storage device
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- 238000007654 immersion Methods 0.000 title claims abstract description 82
- 238000000206 photolithography Methods 0.000 title claims abstract description 18
- 239000012530 fluid Substances 0.000 claims abstract description 100
- 238000010926 purge Methods 0.000 claims abstract description 37
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 18
- 238000003860 storage Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 238000000671 immersion lithography Methods 0.000 claims description 5
- 150000002484 inorganic compounds Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 abstract description 7
- 238000001704 evaporation Methods 0.000 abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000012498 ultrapure water Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- FLJPGEWQYJVDPF-UHFFFAOYSA-L caesium sulfate Chemical compound [Cs+].[Cs+].[O-]S([O-])(=O)=O FLJPGEWQYJVDPF-UHFFFAOYSA-L 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 150000008040 ionic compounds Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000012047 saturated solution Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 125000004122 cyclic group Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
ウェハーステージと、
前記ウェハーステージ上に配置されるウェハーに像を投影するレンズと、
前記レンズと前記ウェハーの間に液浸液体を供給する液浸流体供給手段と、
供給された液浸流体について前記液浸液体の成分で飽和したパージ流体を運搬するパージ流体運搬手段とを備えた液浸リソグラフィシステムを提供する。
ウェハーとレンズの間に液浸流体を配置するステップと、
前記液浸流体を介して前記ウェハーに像を投影するステップと、
前記液浸流体について前記液浸流体の成分で飽和したパージ流体を運搬するステップとを備えた方法を提供する。
レンズを収容する格納装置を提供するステップと、
前記レンズがウェハーに像を投影するようにウェハーを格納装置内に配置するステップと、
前記レンズと前記ウェハーの間の液浸流体を前記格納領域内に維持するステップと、
前記液浸流体の成分で飽和したパージ流体を、前記格納装置を介して運搬するステップとを備えた方法を提供する。
Claims (19)
- ウェハーステージと、
前記ウェハーステージ上に配置されるウェハーに像を投影するレンズと、
前記レンズと前記ウェハーの間に液浸液体を供給する液浸流体供給手段と、
供給された液浸流体について前記液浸液体の成分で飽和したパージ流体を運搬するパージ流体運搬手段とを備えた液浸リソグラフィシステム。 - 前記液浸流体は、溶媒及び少なくとも1つの溶質を備えた溶液であり、前記パージ流体は、前記溶媒で飽和する請求項1に記載のシステム。
- 前記溶媒は水である請求項2に記載のシステム。
- 前記溶質は、無機化合物又は有機化合物を含んでいる請求項2又は3に記載のシステム。
- 前記パージ流体は、飽和ガスを含んでいる上記請求項いずれか1つに記載のシステム。
- 前記ガスは、クリーンドライエアー及び窒素の内の1つである請求項5に記載のシステム。
- 前記ウェハーステージ及び前記レンズを収容する格納装置を備え、
前記パージ流体供給システムは、パージ流体の流れを前記格納装置に供給するように配置される上記請求項いずれか1つに記載のシステム。 - 前記格納装置は、パージ流体の流れを受け付ける導入口と、前記格納装置からパージ流体を排出する出口を有している請求項7に記載のシステム。
- 前記液浸流体供給手段は、前記レンズと前記ウェハーの間の位置に前記液浸流体を供給するように配置される上記請求項いずれか1つに記載のシステム。
- ウェハーステージと該ウェアーステージ上に配置されるウェハーに像を投影するレンズとを収容する格納装置と、
前記レンズが前記ウェハーに像を投影する使用中に液浸流体を前記格納装置に供給する液浸流体供給手段と、
前記液浸流体の成分で飽和したパージ流体を、前記格納装置を介して運搬するパージ流体運搬手段とを備えた液浸リソグラフィシステム。 - 液浸フォトリソグラフィを実現する方法であって、
ウェハーとレンズの間に液浸流体を配置するステップと、
前記液浸流体を介して前記ウェハーに像を投影するステップと、
前記液浸流体について前記液浸流体の成分で飽和したパージ流体を運搬するステップとを備えた方法。 - 前記液浸流体は、溶媒及び少なくとも1つの溶質を備えた溶液であり、前記パージ流体は、前記溶媒で飽和する請求項11に記載の方法。
- 前記溶媒は水である請求項12に記載の方法。
- 前記溶質は、無機化合物又は有機化合物を含んでいる請求項12又は13に記載の方法。
- 前記パージ流体は、飽和ガスを含んでいる請求項11から14のいずれか1つに記載の方法。
- 前記ガスは、クリーンドライエアー及び窒素の内の1つである請求項15に記載の方法。
- 前記ウェハーステージ及びレンズは、格納装置内に収容され、パージ流体の流れが、前記格納装置に与えられる請求項11から16のいずれか1つに記載の方法。
- 前記液浸流体は、前記レンズと前記ウェハーの間の位置に供給される請求項11から17のいずれか1つに記載の方法。
- 液浸フォトリソグラフィを実現する方法であって、
レンズを収容する格納装置を提供するステップと、
前記レンズがウェハーに像を投影するようにウェハーを格納装置内に配置するステップと、
前記レンズと前記ウェハーの間の液浸流体を前記格納領域内に保持するステップと、
前記液浸流体の成分で飽和したパージ流体を、前記格納装置を介して運搬するステップとを備えた方法。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/882,916 US20060001851A1 (en) | 2004-07-01 | 2004-07-01 | Immersion photolithography system |
| PCT/GB2005/002473 WO2006003373A2 (en) | 2004-07-01 | 2005-06-22 | Immersion photolithography system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2008504708A true JP2008504708A (ja) | 2008-02-14 |
Family
ID=33518315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007518676A Pending JP2008504708A (ja) | 2004-07-01 | 2005-06-22 | 液浸フォトリソグラフィシステム |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20060001851A1 (ja) |
| EP (1) | EP1761824A2 (ja) |
| JP (1) | JP2008504708A (ja) |
| KR (1) | KR101213283B1 (ja) |
| CN (1) | CN101014905A (ja) |
| GB (1) | GB0424208D0 (ja) |
| TW (1) | TWI471901B (ja) |
| WO (1) | WO2006003373A2 (ja) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006054468A (ja) * | 2004-08-13 | 2006-02-23 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2009164622A (ja) * | 2004-12-07 | 2009-07-23 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2009200494A (ja) * | 2008-02-21 | 2009-09-03 | Asml Holding Nv | 液浸リソグラフィのリフロ及びバッファシステム |
| US7771918B2 (en) | 2004-06-09 | 2010-08-10 | Panasonic Corporation | Semiconductor manufacturing apparatus and pattern formation method |
| WO2010103822A1 (ja) * | 2009-03-10 | 2010-09-16 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004086470A1 (ja) | 2003-03-25 | 2004-10-07 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| WO2005015315A2 (de) * | 2003-07-24 | 2005-02-17 | Carl Zeiss Smt Ag | Mikrolithographische projektionsbelichtungsanlage sowie verfahren zum einbringen einer immersionsflüssigkeit in einem immersionsraum |
| US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
| DE602005019689D1 (de) * | 2004-01-20 | 2010-04-15 | Zeiss Carl Smt Ag | Belichtungsvorrichtung und messeinrichtung für eine projektionslinse |
| US7156925B1 (en) * | 2004-11-01 | 2007-01-02 | Advanced Micro Devices, Inc. | Using supercritical fluids to clean lenses and monitor defects |
| WO2006084641A2 (en) | 2005-02-10 | 2006-08-17 | Asml Netherlands B.V. | Immersion liquid, exposure apparatus, and exposure process |
| US7378025B2 (en) * | 2005-02-22 | 2008-05-27 | Asml Netherlands B.V. | Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method |
| US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7652746B2 (en) | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2007001848A2 (en) * | 2005-06-24 | 2007-01-04 | Sachem, Inc. | High refractive index fluids with low absorption for immersion lithography |
| DE102006021797A1 (de) | 2006-05-09 | 2007-11-15 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung mit thermischer Dämpfung |
| US7866637B2 (en) | 2007-01-26 | 2011-01-11 | Asml Netherlands B.V. | Humidifying apparatus, lithographic apparatus and humidifying method |
| US8514365B2 (en) * | 2007-06-01 | 2013-08-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| NL1035908A1 (nl) * | 2007-09-25 | 2009-03-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| NL2003392A (en) | 2008-09-17 | 2010-03-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| JP2010263072A (ja) * | 2009-05-07 | 2010-11-18 | Canon Inc | 露光装置、洗浄方法及びデバイス製造方法 |
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| JPH04305915A (ja) * | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
| JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| JP2004165666A (ja) * | 2002-11-12 | 2004-06-10 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2005019864A (ja) * | 2003-06-27 | 2005-01-20 | Canon Inc | 露光装置及び露光方法 |
| WO2005071491A2 (en) * | 2004-01-20 | 2005-08-04 | Carl Zeiss Smt Ag | Exposure apparatus and measuring device for a projection lens |
| JP2006019742A (ja) * | 2004-07-01 | 2006-01-19 | Interuniv Micro Electronica Centrum Vzw | 液浸リソグラフィの方法および装置 |
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-
2004
- 2004-07-01 US US10/882,916 patent/US20060001851A1/en not_active Abandoned
- 2004-11-01 GB GBGB0424208.7A patent/GB0424208D0/en not_active Ceased
-
2005
- 2005-06-22 EP EP05755149A patent/EP1761824A2/en not_active Withdrawn
- 2005-06-22 CN CNA2005800225860A patent/CN101014905A/zh active Pending
- 2005-06-22 JP JP2007518676A patent/JP2008504708A/ja active Pending
- 2005-06-22 WO PCT/GB2005/002473 patent/WO2006003373A2/en not_active Ceased
- 2005-07-01 TW TW94122244A patent/TWI471901B/zh not_active IP Right Cessation
-
2006
- 2006-12-29 KR KR1020067027939A patent/KR101213283B1/ko not_active Expired - Fee Related
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| JPH04305915A (ja) * | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
| JPH10303114A (ja) * | 1997-04-23 | 1998-11-13 | Nikon Corp | 液浸型露光装置 |
| JPH10340846A (ja) * | 1997-06-10 | 1998-12-22 | Nikon Corp | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
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Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7771918B2 (en) | 2004-06-09 | 2010-08-10 | Panasonic Corporation | Semiconductor manufacturing apparatus and pattern formation method |
| JP2012064982A (ja) * | 2004-08-13 | 2012-03-29 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| US11378893B2 (en) | 2004-08-13 | 2022-07-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method involving a heater |
| US10838310B2 (en) | 2004-08-13 | 2020-11-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method involving a heater |
| US9268242B2 (en) | 2004-08-13 | 2016-02-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method involving a heater and a temperature sensor |
| JP2014027308A (ja) * | 2004-08-13 | 2014-02-06 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2006054468A (ja) * | 2004-08-13 | 2006-02-23 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| US10254663B2 (en) | 2004-08-13 | 2019-04-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method involving a heater |
| US9188880B2 (en) | 2004-08-13 | 2015-11-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method involving a heater |
| JP2009164622A (ja) * | 2004-12-07 | 2009-07-23 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2012094892A (ja) * | 2004-12-07 | 2012-05-17 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
| JP2009200494A (ja) * | 2008-02-21 | 2009-09-03 | Asml Holding Nv | 液浸リソグラフィのリフロ及びバッファシステム |
| US8451422B2 (en) | 2008-02-21 | 2013-05-28 | Asml Netherlands B.V. | Re-flow and buffer system for immersion lithography |
| JP5482784B2 (ja) * | 2009-03-10 | 2014-05-07 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| KR101712219B1 (ko) | 2009-03-10 | 2017-03-03 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
| US9753378B2 (en) | 2009-03-10 | 2017-09-05 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US9041902B2 (en) | 2009-03-10 | 2015-05-26 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| US10310383B2 (en) | 2009-03-10 | 2019-06-04 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| KR20110137343A (ko) * | 2009-03-10 | 2011-12-22 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법, 및 디바이스 제조 방법 |
| WO2010103822A1 (ja) * | 2009-03-10 | 2010-09-16 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI471901B (zh) | 2015-02-01 |
| TW200616038A (en) | 2006-05-16 |
| WO2006003373A3 (en) | 2006-03-30 |
| KR101213283B1 (ko) | 2012-12-17 |
| WO2006003373A2 (en) | 2006-01-12 |
| CN101014905A (zh) | 2007-08-08 |
| KR20070027655A (ko) | 2007-03-09 |
| EP1761824A2 (en) | 2007-03-14 |
| US20060001851A1 (en) | 2006-01-05 |
| GB0424208D0 (en) | 2004-12-01 |
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