JP2008294071A - Optical semiconductor device, lighting device and display device - Google Patents

Abstract

The present invention relates to an optical semiconductor device in which a reflection opening of a reflecting member is reliably functioned as a reflector while improving the light emission efficiency of the optical semiconductor element, and an outer shape of the optical semiconductor device is reduced as much as possible. Provided are a lighting device and a display device including the device.
A plurality of optical semiconductor elements S1 are mounted on an inner lead portion 1 at a predetermined interval, and a reflecting member 2 made of a white resin material is provided on the inner lead portion, and the reflecting member is tapered from the periphery of the optical semiconductor element. The reflective opening 3 is formed in an enlarged shape, and the light-transmitting sealing member 6 seals the reflective opening and the optical semiconductor element of the reflective member, and the adjacent reflective openings overlap each other. The arrangement pitch of the semiconductor elements is shortened, and the trapezoidal portion 4 is cut out in the overlapping portion between the reflective openings.
[Selection] Figure 1

Description

  The present invention relates to an optical semiconductor device including a plurality of optical semiconductor elements, and an illumination device and a display device including the optical semiconductor device as a light source.

  An optical semiconductor device provided with an optical semiconductor element that emits white light (Light Emitting Diode) is small in size, has high brightness obtained for input power, and has a long lifetime. No harmful substances such as mercury are used, and application to general lighting, partial lighting such as automobiles, or display devices as an alternative light source such as an incandescent lamp and a fluorescent lamp is being promoted. However, the optical semiconductor device is disadvantageous in that the price per luminance is higher than that of a light source such as a lamp that has been used in the past, and there is a great demand for cost reduction.

  Recently, due to the feature that high luminance can be obtained, blue light and yellow light are emitted from the optical semiconductor element using an optical semiconductor element that emits blue light and a phosphor that converts the wavelength of blue light into yellow light. A method of obtaining pseudo white light has been developed. For the inner lead portion, a metal frame having a case made of a white resin material having high light reflectance is often used.

8 and 9 show a schematic configuration of a conventional optical semiconductor device.
8A and 8B are a plan view and a cross-sectional view of the first type optical semiconductor device Ha, and FIGS. 9A and 9B are a plan view and a cross-sectional view of the second type optical semiconductor device. .
The first type optical semiconductor device Ha is a type in which one optical semiconductor element Sa having a large light emitting layer area is mounted on the inner lead portion a. The reflection member b made of a white resin material provided in the inner lead part a has a mortar-like reflection opening (reflector) c. The reflection opening c and the semiconductor element Sa are sealed with a sealing member d made of a resin material.

  The optical semiconductor device Ha is simple in structure because of the single optical semiconductor element Sa. However, since the optical semiconductor element Sa has a large light emitting layer area, the luminance with respect to input power is reduced. End up. In order to obtain higher luminance, a larger input power is required, and an increase in running cost is inevitable.

  The second type optical semiconductor device Hb has the same configuration as that of the first type except that a plurality of optical semiconductor elements Sb having a small light emitting layer area are provided in one reflection opening c. Since this optical semiconductor device Hb has a small light emitting layer area of the optical semiconductor element Sb, the light emitting efficiency is high with respect to the input power, but a plurality of optical semiconductor elements Sb are mounted in one reflective opening c. The number of processes increases and the size of the optical semiconductor device Sb increases.

  Note that in an optical semiconductor device having a structure in which the reflective opening is formed of a white resin material, the white resin material is discolored by blue light having a short wavelength, and the light reflection characteristics tend to deteriorate early. Therefore, the lifetime of reliability is short as compared with other optical semiconductor devices for visible light. In recent years, an optical semiconductor element that emits blue light has been improved in luminous efficiency with respect to input power and increased in luminance. Therefore, it is estimated that the current device structure further shortens the product life.

As a countermeasure, it is expected that development of an optical semiconductor device using a large number of small-sized optical semiconductor elements and forming a reflective opening for each optical semiconductor element will progress. An optical semiconductor device in which a reflective opening is formed for each of a plurality of optical semiconductor elements is disclosed in, for example, [Patent Document 1] and [Patent Document 2].
JP 2005-223216 A Japanese Patent Laid-Open No. 2006-1000056

  As the white resin material, for example, a thermoplastic resin material is used, but this material has a restriction that the filling property at the time of molding is low. In the optical semiconductor device in which the reflection openings are individually formed in the plurality of optical semiconductor elements, the end portions of the adjacent reflection openings are close to each other or close to each other, so that it is difficult to fill the resin material between the ends.

  In other words, as shown in FIG. 7, the arrangement pitch P of the optical semiconductor elements S1 mounted on the inner lead portion 1 and the reflection member 2 are formed so that the ends of the adjacent reflection openings 3 are in close contact with each other. It is assumed that the upper surface diameter φP of the reflective opening 3 surrounding the optical semiconductor element S1 is set to the same dimension.

  In this case, the top g formed at the ends of the adjacent reflection openings 3 has a sharp cross section. When the reflecting member 2 is molded by the injection molding method, the fluidity of the thermoplastic resin material is low, and therefore it is difficult to fill the top g with the resin material.

  Therefore, a so-called nest may be generated at the top g, and reliability in terms of strength and light emission characteristics is lacking. Therefore, it is necessary to set the arrangement pitch P of the optical semiconductor elements S1 to be larger than the upper surface diameter φP of the reflection openings 3 and to separate the ends of the adjacent reflection openings 3 from each other. When the plurality of optical semiconductor elements and the reflection openings are provided in this manner, the outer shape of the apparatus is increased.

The present invention has been made based on the above circumstances, and the object of the present invention is to improve the luminous efficiency of the semiconductor element by using a plurality of small-area optical semiconductor elements having high luminous efficiency, and to provide a reflective opening. Provided is an optical semiconductor device that can function reliably as a reflector and can be downsized as a device.
And the illuminating device and display apparatus provided with this optical semiconductor device are provided.

In order to satisfy the above object, an optical semiconductor device of the present invention has a plurality of optical semiconductor elements mounted on an inner lead portion at a predetermined interval, and a reflective member made of a white resin material is provided on the inner lead portion. Has a reflective opening formed in a tapered shape from the periphery of the optical semiconductor element, and a sealing member having translucency seals the reflective opening of the reflective member and the optical semiconductor element, so that adjacent reflective openings are mutually connected. The arrangement pitch of the optical semiconductor elements is shortened so that they overlap each other, and a trapezoidal portion is cut out in the overlapping portion between the reflective openings.
In order to satisfy the above object, the illumination device of the present invention includes the optical semiconductor device as a light source.
In order to satisfy the above object, the display device of the present invention includes the above optical semiconductor device as a light source.

  According to the present invention, it is possible to improve the light emission efficiency of the semiconductor element, and to ensure that the reflection opening of the reflection member functions as a reflector, thereby obtaining a reduction in the size of the device.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
1A is a plan view of the optical semiconductor device H1 according to the first embodiment, FIG. 1B is a longitudinal sectional view taken along line BB in FIG. 1A, and FIG. It is a longitudinal cross-sectional view which follows the CC line of 1 (A).

  In the figure, reference numeral 1 denotes an inner lead portion made of a metal frame (copper plate) having a plate thickness of about 0.2 mm. The inner lead portion 1 is provided with a wiring circuit (not shown), and nickel and silver are plated (covered) with a thickness of about 1 μm, and both side portions are formed in a gull wing shape. A plurality (three) of optical semiconductor elements S1 are mounted (die mounted) on the surface of the inner lead portion 1 at a predetermined interval along one direction (X direction).

  The optical semiconductor element S1 is, for example, formed in a size of vertical 0.4 × horizontal 0.4 × thickness 0.2 mm 3, and is a high output type capable of obtaining a light beam of 20 lm by flowing a current of 200 mA. Al2O3 is used as a substrate, and a light emitting layer (not shown) that emits blue light is formed on the upper surface thereof. On this light emitting layer, the anode electrode e1 and the cathode electrode e2 are formed so as to be spaced apart from each other.

  Here, the anode electrode e1 and the cathode electrode e2 are spaced apart from each other in the Y direction. The arrangement direction of the plurality of optical semiconductor elements S1 is the X direction, which is a direction orthogonal to the arrangement direction of the anode electrode e1 and the cathode electrode e2 of each optical semiconductor element S1.

  On the surface on which the optical semiconductor element S1 on the inner lead portion 1 is mounted, a reflecting member 2 made of a white resin material is molded integrally. The white resin material constituting the reflection member 2 is made of a thermoplastic resin material, and has a reflection opening portion 3 which is a so-called reflector in a state matched with the mounting position of the optical semiconductor element S1.

  The reflection openings 3 are provided at a pitch of 1.9 mm along the X direction of the inner lead portion 1. Each reflection opening 3 has a top surface of φ2.0 mm, a bottom surface of φ1.0 mm, and a height of It is formed to 0.5 mm. Therefore, the reflection opening 3 has a substantially mortar (taper) shape whose diameter gradually increases from the bottom surface to the surface.

  In particular, as indicated by a two-dot chain line in FIGS. 1A and 1B, a portion f that overlaps the ends of the adjacent reflective openings 3 due to the relationship between the arrangement pitch and the upper surface diameter in the plurality of reflective openings 3. Occurs. If formed as it is, the apex g of the adjacent reflection openings 3 has a triangular cross section, and the height of the apex g is set to a position somewhat lower than the surface of the reflection member 2.

  However, in the present embodiment, the top portion g of the overlapping portion f between the adjacent reflection openings 3 is cut out to form a truncated shape, and the pedestal portion 4 whose top portion forms a flat surface is formed. In the plan view shown in FIG. 1A, the pedestal 4 has a straight shape at both ends in the Y direction, but has a curved shape along the reflective opening 3 between the two ends.

  And the both-sides edge part of a Y direction is the widest width | variety, the center axis | shaft part of the reflective opening part 3 has the narrowest width | variety, and has comprised what is called a hyperbola shape where the center part was bundled. The maximum dimension in the X direction is 0.3 mm, the length dimension in the Y direction is 1.2 mm, the height dimension is 0.2 mm, and the adjacent reflection openings 3 are connected to each other by the pedestal part 4.

  The pedestal 4 will be further described. The reflecting member 2 having the reflecting opening 3 is molded by an injection molding method using a thermoplastic resin material, but the material itself has low fluidity and the resin material is thin. There is a characteristic that the filling property to a part is low.

  As shown in FIG. 7 above, when the arrangement pitch P of the optical semiconductor elements S1 and the diameter φP of the upper surface of the reflection opening 3 are set to be the same, the tops formed at the ends of the adjacent reflection openings 3 mutually. g is sharp in cross section. In addition, as described with reference to FIG. 1B, even when a portion f that overlaps adjacent reflective openings 3 is generated, the top g formed at the ends of the adjacent reflective openings 3 is not changed. The cross section is triangular.

  Therefore, in the configuration of FIG. 7 or the configuration of the chain double-dashed line in FIG. 1B, it is difficult to fill the thermoplastic resin material up to the top g formed between the ends of the adjacent reflection openings 3. There is a risk of so-called nest formation, and the reliability in terms of strength and light emission characteristics is lacking. On the other hand, as described above, formability can be ensured by forming the top portion g of the portion f where the reflective openings 3 overlap each other to form the pedestal portion 4.

  The anode electrode e1 and the cathode electrode e2 formed to face the light emitting layer on each optical semiconductor element S1 are electrically connected to the inner lead portion 1 via metal wires (gold wires) 5, respectively. All the metal wires 5 are connected in a direction along the arrangement direction of the anode electrode e1 and the cathode electrode e2 in the Y direction.

  The optical semiconductor element S1 and the reflecting member 2 are sealed with a resin material having translucency constituting the sealing member 6. The sealing member 6 has a composition of (Sr, Ba) 2Si4: Eu2 +, for example, and is made of a silicone resin material containing a phosphor that changes the wavelength of blue light to yellow light.

  The sealing member 6 covers the peripheral surface excluding the bottom surface of the optical semiconductor element S1, the metal wire 5, the reflection opening 3 of the reflection member 2, and the pedestal 4 interposed between the adjacent reflection openings 3. . In particular, since the height dimension of the reflecting member 2 is 0.5 mm and the height dimension of the pedestal part 4 is 0.2 mm, the thickness dimension of the sealing member 6 on the pedestal part 4 is 0.3 mm.

  In the optical semiconductor device H1 configured as described above, the optical semiconductor element S1 actually emits blue light. When the blue light passes through the phosphor-containing silicone resin material constituting the sealing member 6, a part of the blue light is changed in wavelength to yellow light. The reflection opening 3 of the reflection member 2 functions as a reflector, and reflects and guides light transmitted through the sealing member 6.

  In a state where blue light and yellow light are emitted from the sealing member 6, human vision is recognized as pseudo white and applied as an optical semiconductor device H <b> 1 that emits white. Since a plurality (three) of the optical semiconductor elements S1 are provided in the inner lead portion 1 to emit light all at once, high luminance corresponding to the input power or higher than the input power can be obtained, and the light emission efficiency can be improved.

  Although a plurality of optical semiconductor elements S1 are provided, the mutual interval between the adjacent optical semiconductor elements S1 is shortened as much as possible, and a portion f where the adjacent reflection openings 3 overlap each other is provided. Therefore, the optical semiconductor device H1 can be downsized. Since the overlapping portion f of the adjacent reflection openings 3 is cut out to form the pedestal portion 4, the minimum necessary thickness portion remains, and there is no problem in that the reflection opening 3 functions as a reflector.

  Since this optical semiconductor device H1 is a light emitting light source that emits white light, it is optimal for use alone as an illumination device. Alternatively, it is also optimal for use as a display device in combination with light emission sources of other colors.

FIG. 2 is a plan view of the optical semiconductor device H2, which is a modification of the first embodiment described with reference to FIG. The same components as those described above are denoted by the same reference numerals and a new description is omitted. (same as below)
The optical semiconductor device H1 described with reference to FIG. 1 includes one optical semiconductor element S1 for one reflective opening 3. However, in the optical semiconductor device H2 of this modification, one optical opening for the reflective opening 3 is provided. Two optical semiconductor elements S2 each having a small area of the light emitting layer are provided. In this case, since the area of the light emitting layer of the optical semiconductor element S2 is small, the light emission efficiency with respect to the input electrode is high.

  Although the total number of the optical semiconductor elements S2 is increased, the interval between the adjacent optical semiconductor elements S2 is reduced as much as possible. Since the adjacent reflection openings 3 overlap each other, the optical semiconductor device H2 can be downsized. Since the pedestal portion 4 is formed by cutting out the overlapping portion of the adjacent reflection openings 3, it functions as a reflector while leaving the minimum necessary thickness portion.

  3A is a plan view of the optical semiconductor device H3 according to the second embodiment of the present invention, FIG. 3B is a cross-sectional view taken along line BB in FIG. 3A, and FIG. ) Is a cross-sectional view taken along the line CC in FIG.

  The inner lead portion 1A is made of the same material, the same plate thickness, and the same surface treatment as in the first embodiment, but here is formed in a rectangular shape close to a square. A plurality (four) of optical semiconductor elements S1 having the same characteristics as those described above are mounted on a predetermined portion on the inner lead portion 1A. An anode electrode e1 and a cathode electrode e2 are formed on the light emitting layer of each optical semiconductor element S1 so as to face each other.

  Two optical semiconductor elements S1 are arranged along the X direction and two are arranged along the Y direction. The anode electrode e1 and the cathode electrode e2 of each optical semiconductor element S1 face each other along the X direction. In other words, each optical semiconductor element S1 includes two electrodes e1 and e2 that are spaced apart from each other, and the plurality of optical semiconductor elements S1 includes the arrangement direction of the electrodes e1 and e2 and the arrangement direction of the electrodes e1 and e2. Are arranged in a direction orthogonal to each other.

  As will be described later, the metal wire 5 that electrically connects the electrodes e2 and e1 between the optical semiconductor elements S1 arranged along the X direction, and the electrode e1 of one (left side in the figure) of the optical semiconductor element S1 The metal wire 5 that electrically connects the inner lead portion 1A and the metal wire 5 that electrically connects the other electrode e2 of the optical semiconductor element S1 (right side in the figure) are all connected along the X direction. ing.

  The arrangement pitch of the optical semiconductor elements S1 is 1.9 mm in both the X and Y directions, and the reflection openings 2 of the reflection member 2A made of a white resin material provided in the inner lead part 1A are the number of the optical semiconductor elements S1 (four). ) And the arrangement, a total of 4 pieces of 2 × 2 are provided in the X direction and the Y direction. Therefore, the center pitch of the reflective openings 3 is 1.9 mm in both the XY directions.

  The reflective opening 3 has a substantially mortar shape having a top surface diameter of 2.0 mm, a bottom surface diameter of 1.0 mm, and a height of 0.5 mm, and the diameter gradually increases from the bottom surface to the surface. In the XY directions, overlapping portions of the ends of the reflective openings 3 adjacent to each other are generated due to the relationship between the upper surface diameter and the arrangement pitch, and the pedestal portion 4 is formed by cutting out the top of the overlapping portions.

  In the plan view shown in FIG. 3 (A), the pedestal portion 4 has the widest width dimension at both end portions in the Y direction, the central axis portion in the Y direction has the narrowest width dimension, and the central portion is most narrowed. It has a so-called hyperbolic shape. From the above dimensional relationship, the lateral dimension is 0.3 mm, the longitudinal dimension is 1.2 mm, and the height dimension is 0.2 mm.

  Since the reflecting member 2A is molded by an injection molding method using a thermoplastic resin material, the fluidity of the material itself is low, and the filling property of the thin resin portion is low. However, the moldability of the reflective member 2A can be ensured by forming the pedestal portion 4 in a portion where the ends of the mortar-shaped reflective opening 3 overlap each other.

  Next, the anode electrode e1 and the cathode electrode e2, and the inner lead portion 1 based on the difference between the arrangement structure of the optical semiconductor element S1 described above with reference to FIG. 1 and the arrangement structure of the optical semiconductor element S1 described with reference to FIG. , 1A and the difference in the connection structure by the metal wire 5 will be described.

  4A shows the connection structure of the metal wire 5 and the inner lead portion when a plurality of optical semiconductor elements S1 are arranged in a direction orthogonal to the arrangement direction of the electrodes e1 and e2, as described in FIG. The structure of 1 is shown typically. However, FIG. 1A shows three optical semiconductor elements S1, and FIG. 4A shows four optical semiconductor elements S1.

  The anode electrode e1 of each optical semiconductor element S1 is electrically connected through the metal wire 5 to the inner lead portion 1a on which the optical semiconductor element S1 is mounted. The metal wire 5 is wired along the Y direction. The cathode electrode e2 of each optical semiconductor element S1 is electrically connected via the metal wire 5 to the other inner lead portion 1b that is electrically independent from the inner lead portion 1a. The metal wire 5 is also wired along the Y direction.

  Therefore, the inner lead portions 1a and 1b are formed in a long rectangular shape along the arrangement direction (X direction) of the optical semiconductor element S1, so that the inner lead portions 1a and 1b can be easily molded and assembled. .

The edge along the longitudinal direction (X direction) of one inner lead portion 1a and the edge along the longitudinal direction (X direction) of the other inner lead portion 1b are electrically insulated from each other. For this reason, there is a narrow gap between each other, but this gap is only required in one place, and the entire inner lead portion 1 can be reduced in size.
Since all the metal wires 5 are unified so as to be connected along the Y direction, the connection work of the metal wires 5 can be performed quickly.

  FIG. 4B shows the connection structure of the metal wires 5 and the structure of the inner lead portion 1 when two optical semiconductor elements S1 are arranged in the X direction and the Y direction as described in FIG. This is shown schematically. However, the anode electrode e1 and the cathode electrode e2 in each optical semiconductor element S1 are spaced apart from each other in the X direction in FIG. 3, but here are separated from each other in the Y direction.

  The cathode electrode e <b> 2 in each optical semiconductor element S <b> 1 is electrically connected via the metal wire 5 to the inner lead portion 1 d on which the optical semiconductor element S <b> 1 is mounted. The metal wire 5 is connected along the Y direction. In addition, the anode electrode e1 in each optical semiconductor element S1 is electrically connected through the metal wire 5 to the other inner lead portion 1c that is electrically independent from the inner lead portion 1d. The metal wire 5 is connected along the X direction.

  Accordingly, the inner lead portions 1c and 1d inevitably have a substantially concave shape in which a substantially central portion in the X direction is cut out from one end edge to the vicinity of the other end portion in the Y direction, and are nested in each other. It becomes a combined structure. Of course, the inner lead portions 1c and 1d are arranged with a gap for insulation between the opposing edges so that the inner lead portions 1c and 1d are electrically independent. In this case, three gap portions for insulation are required.

  Furthermore, each inner lead part 1c, 1d is stamped and formed by, for example, press working, but there is a molding restriction that a predetermined punching width must be ensured. Since these conditions overlap, an optical semiconductor device having this structure cannot be avoided in size. Moreover, since the metal wires 5 must be connected along the X direction and the Y direction, the workability is reduced as compared with the case where they are all connected along the same direction.

  4C, two optical semiconductor elements S1 are arranged in the X direction and the Y direction, respectively, as described in FIG. 3, and the anode electrode e1 and the cathode in each optical semiconductor element S1 are arranged as in FIG. The connection structure of the metal wire 5 and the inner lead portion 1A structure when the electrode e2 is disposed along the X direction are schematically shown.

  The anode electrode e1 in the left side optical semiconductor element S1 in the drawing is electrically connected to the inner lead portion 1e on which the optical semiconductor element S1 is mounted via the metal wire 5. The metal wire 5 is connected along the X direction. Further, the cathode electrode e2 in the right optical semiconductor element S1 is electrically connected through the metal wire 5 to the other inner lead portion 1f that is electrically independent of the inner lead portion 1e. This metal wire 5 is also connected along the X direction.

  The cathode electrode e2 of the left optical semiconductor element S1 and the anode electrode e1 of the right optical semiconductor element S1 are electrically connected by a metal wire 5. Since the metal wire 5 connects the electrodes e2 and e1 between the optical semiconductor elements S1 that are spaced apart from each other in the left and right (X direction), the metal wire 5 is naturally connected along the X direction. Note that the pedestal portion 4 (shown by an alternate long and short dash line in the figure) is interposed between the left and right optical semiconductor elements S1, and the metal wire 5 is installed over the pedestal portion 4.

  Therefore, each inner lead portion 1e, 1f is not a complicated shape like the inner lead portions 1c, 1d described above with reference to FIG. 4B, but may be a simple rectangular shape, for example, stamping by press working. There are no restrictions on molding. Only one gap for insulation is required, and an increase in size as the optical semiconductor device H3 can be suppressed. Moreover, since all the metal wires 5 are connected along the X direction, this connection work can be performed quickly.

In addition, the connection operation | work of the metal wire 5 with respect to each electrode e1, e2 in a pair (two pieces) optical semiconductor element S1 juxtaposed in the X direction shown in FIG. This is done as described below.
5A, 5B, and 5C are diagrams for sequentially explaining the connection work of the metal wires 5. FIG.

  As shown in FIG. 5A, a reflecting member 2A made of a white resin material is molded on the inner lead portion 1A, and then two optical semiconductor elements S1 are spaced on the inner lead portion 1A. Implemented. The optical semiconductor element S is placed in the center of the reflection opening 3 formed in the reflection member 2A, and a pedestal 4 is formed between the reflection openings 3.

  As shown in FIG. 5B, a gold bump e11 is formed on the upper surface of the anode electrode e1 of the right optical semiconductor element S1 by a bump bonder. The gold bumps are formed in advance only for the anode electrode e1 of the right optical semiconductor element S1.

  As shown in FIG. 5C, first, for example, a gold bump e11 is formed on the anode electrode e1 of the left optical semiconductor element S1, a metal wire 5 is ball-bonded on the gold bump e11, and an inner lead portion is further formed. This is a step of wedge bonding on 1e. Therefore, the anode electrode e1 and the inner lead portion 1e of the left optical semiconductor element S1 are electrically connected via the metal wire 5.

  Next, a gold bump e12 is formed on the cathode electrode e2 of the right optical semiconductor element S1, a metal wire 5 is ball-bonded on the gold bump e12, and wedge bonding is performed on the inner lead portion 1f. Therefore, the cathode electrode e2 of the right optical semiconductor element S1 and the inner lead portion 1f are electrically connected via the metal wire 5.

  Next, the cathode electrode e2 of the left side optical semiconductor element S1 and the anode electrode e1 of the right side semiconductor element S2 are connected by a metal wire 5 with a wire bonder. As a first step of wire bonding at this time, a gold bump e12 is formed on the cathode electrode e2 of the left optical semiconductor element S1.

  Then, the wire bonder tool is moved onto the anode electrode e1 of the right semiconductor element S1 while feeding the metal wire 5 from the gold bump e12 formed on the cathode electrode e2 of the left semiconductor element S1.

  As described above, the gold bump e11 has already been formed on the anode electrode e1 of the right semiconductor element S1, and the metal wire 5 is bonded to the gold bump e11 and then pulled and separated.

  That is, the metal wire 5 separation step at this time is performed after the metal wire 5 is bonded to the gold bump e11 already formed on the anode electrode e1, so that the surface of the anode electrode e1 is not damaged by the edge of the tool. Connection is possible and reliability can be ensured.

  FIGS. 6A, 6B, and 6C show a modification of the second embodiment.

  6A is a plan view of the optical semiconductor device H4, FIG. 6B is a vertical cross-sectional view taken along line BB in FIG. 6A, and FIG. 6C is C- in FIG. 6A. It is a longitudinal cross-sectional view which follows a C line.

  Similar to the optical semiconductor device H3 described as the second embodiment, also in the optical semiconductor device H4, the optical semiconductor element S1 is arranged in the inner lead portion 1A in a state of 2 × 2 in the X direction and the Y direction. Since the connection structure of the metal wires 5 in each optical semiconductor element S1 is the same as described above, a new description is omitted here.

In this modification, the arrangement configuration of the optical semiconductor element S1 and the reflecting member 2A structure associated therewith are different from the previous one.
That is, the optical semiconductor elements S1 are arranged at the same pitch in the X direction and the Y direction, but the arrangement pitch of the optical semiconductor elements S1 is shortened as much as possible to reduce the area of the inner lead portion 1A. Miniaturization is promoted as the optical semiconductor device H4.

  However, if the arrangement pitch between the optical semiconductor elements S1 is extremely shortened, a necessary amount of the height of the pedestal portion 4A formed between the reflection openings 3 in the reflection member 2A cannot be secured. As a result, even if each of the optical semiconductor elements S1 emits light, a part of the reflection opening 3 is missing and the function as a reflector cannot be exhibited.

  As described above, the height of the reflecting member 2A is set to 0.5 mm, the reflecting opening 3 has a top surface diameter of 2.0 mm and a bottom surface diameter of 1.0 mm, and the pedestal portion 4A has a height of 0. Set to 2 mm. With the height dimension of the pedestal portion 4A, the reflective opening 3 retains the function as a reflector even in the pedestal portion 4A in a state where the optical semiconductor element S1 emits light.

  That is, even if the arrangement pitch of the optical semiconductor elements S1 is shortened as much as possible and brought close to each other, the height of the pedestal portion 4A must be 0.2 mm. Then, in particular, as shown in FIG. 6A, the tangent line j on the upper surface of the reflective opening 3 is connected to the tangent line j of the reflective opening 3 adjacent in the X direction and the Y direction. All except for the reflective opening 3 inside the tangent line j are the above-described pedestal portion 4A and have the same height.

  Therefore, even if the arrangement pitch of the optical semiconductor elements S1 is shortened as much as possible and the configurations are close to each other, the required height of the pedestal portion 4A can be maintained, and the reflective opening 3 can reliably function as a reflector. can get.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. Various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above-described embodiments.

The longitudinal cross-sectional view which cut | disconnected the mutually different site | part from the top view of the optical semiconductor device based on 1st Embodiment in this invention. The top view of the optical semiconductor device based on the modification of the embodiment. The longitudinal cross-sectional view which cut | disconnected the mutually different site | part from the top view of the optical semiconductor device based on 2nd Embodiment in this invention. Explanatory drawing which simplifies and shows the wire connection structure and inner lead part structure according to the difference of the arrangement structure of the optical-semiconductor element based on the said 1st Embodiment and 2nd Embodiment. The figure explaining the connection structure of the metal wire based on the said 2nd Embodiment in order. The longitudinal cross-sectional view cut | disconnected in the mutually different site | part from the top view of the optical semiconductor device which concerns on the modification of the embodiment. The partial cross section figure of the optical semiconductor device of the conventional structure. The top view and longitudinal cross-sectional view of the optical semiconductor device of a conventional structure. Furthermore, the top view and longitudinal cross-sectional view of an optical semiconductor device of another conventional structure.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1,1A ... Inner lead part, S1, S2 ... Optical semiconductor element, 3 ... Reflective opening part, 2, 2A ... Reflective member, 6 ... Sealing member, 4, 4A ... Trapezoid part, 5 ... Metal wire.

Claims (7)

A plurality of optical semiconductor elements mounted on the inner lead portion with a predetermined interval and having a light emitting layer on the surface;
A reflective member made of a white resin material provided in the inner lead portion and having a plurality of reflective openings formed in a tapered shape from the periphery of the optical semiconductor element;
A translucent sealing member that seals the reflective opening of the reflective member and the optical semiconductor element;
An optical semiconductor characterized in that an arrangement pitch of the optical semiconductor elements is shortened so that ends of adjacent reflective openings overlap each other, and the overlapped portion between the reflective openings is a trapezoidal part formed with a notch. apparatus. The optical semiconductor element includes two electrodes spaced apart from each other in the light emitting layer,
In a state where these optical semiconductor elements are arranged along a direction orthogonal to the arrangement direction of the electrodes,
One electrode of the optical semiconductor element is electrically connected to the inner lead portion where the optical semiconductor element is mounted via a metal wire, and the other electrode is electrically independent of the inner lead portion via the metal wire. The optical semiconductor device according to claim 1, wherein the optical semiconductor device is electrically connected to the other inner lead portion. The plurality of optical semiconductor elements include two electrodes spaced apart from each other in the light emitting layer,
While arranging these optical semiconductor elements along the arrangement direction of the electrodes, and arranged along the direction orthogonal to the arrangement direction of the electrodes,
The electrodes of the optical semiconductor elements adjacent in the direction along the arrangement direction of the electrodes are electrically connected via a metal wire,
The remaining electrode in one optical semiconductor element is electrically connected to an inner lead portion for mounting the optical semiconductor element via a metal wire, and the remaining electrode in the other optical semiconductor element is connected to the inner lead via a metal wire. The optical semiconductor device according to claim 1, wherein the optical semiconductor device is electrically connected to the other inner lead portion that is electrically independent of the portion.   4. The optical semiconductor device according to claim 2, wherein all of the metal wires are connected in a direction along an arrangement direction of the electrodes in the optical semiconductor element. 5. When the surface of the inner lead portion is a first height, the top flat surface of the trapezoidal portion is a second height, and the surface of the reflecting member is a third height,
The metal wire for electrically connecting the electrodes of the optical semiconductor elements adjacent to each other in the direction along the arrangement direction of the electrodes has a second height and a third height beyond the top flat surface of the trapezoidal portion. 4. The optical semiconductor device according to claim 3, wherein the optical semiconductor device is interposed between the optical semiconductor devices.   An illumination device comprising the optical semiconductor device according to any one of claims 1 to 5 as a light source.   A display device comprising the optical semiconductor device according to claim 1 as a light source.

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