JP2008198831A - Light emitting diode unit and method for manufacturing light emitting diode unit - Google Patents

Abstract

The present invention provides a light emitting diode unit and a light emitting diode capable of flowing a large current through the upper and lower electrode type light emitting diodes and taking into consideration heat dissipation generated at that time or expansion and contraction of a metal member due to the heat due to the heat. The present invention relates to a unit manufacturing method.
In a light emitting diode unit according to the present invention, two metal substrates are separated in an insulating state through a slit. In the vertical electrode type light emitting diode, a lower electrode is joined to one of the metal substrates, and an upper electrode is joined to the other of the metal substrates by eutectic solder via the conductive connection member. The hard resin portion is made of a thermosetting resin material formed on at least both sides of the upper and lower electrode type light emitting diodes across the slit portion on the two metal substrates. The sealing material is placed inside the hard resin portion and seals the upper and lower electrode type light emitting diodes.
[Selection] Figure 1

Description

  The present invention relates to a light emitting diode unit in which upper and lower electrode type light emitting diodes are provided on a pair of metal substrates, and a method for manufacturing the light emitting diode unit. In particular, the present invention provides a light emitting diode unit and a light emitting diode capable of flowing a large current through the upper and lower electrode type light emitting diodes and taking into account heat dissipation generated at that time or expansion and contraction due to thermal stress of the metal member due to the heat. The present invention relates to a unit manufacturing method. Further, the present invention can prevent damage to the light emitting layer due to vibration or heat by connecting a gold wire with a conductive connecting member made of a metal plate-like member instead of connecting by wire bonding with eutectic solder. The present invention relates to a light emitting diode unit composed of upper and lower electrode type light emitting diodes and a method for manufacturing the light emitting diode unit.

In the method of manufacturing a light emitting diode described in Japanese Patent Application Laid-Open No. 2006-324331, a GaN layer is grown only on a sapphire substrate subjected to uneven processing, and then etched back to perform a GaN layer only on the bottom of the recess. I'm leaving.
JP 2006-324331 A

  The GaN-based light emitting diode described in the above publication does not solve the problems when used as a light emitting diode unit. In addition, the upper and lower electrode type light emitting diodes have good luminous efficiency and high illuminance. However, when the upper and lower electrode type light emitting diodes are used for illumination, the upper electrode is wired with a gold wire, and when a large amount of current is passed, the wiring is disconnected due to heat stress due to heat generation, or the upper electrode and the gold wire are not connected. There is a problem that the upper and lower electrode type light emitting diodes are burned due to the connection resistance between them. Moreover, the light emitting diode attached to the metal board | substrate provided with the slit is sealed with transparent resin, and the thing with high hardness is used in order to give intensity | strength with the said transparent resin. However, the sealing material having a high hardness has a problem that the thermal stress generated from the light emitting diode is large. The thermal stress may break the wiring that supplies power to the light emitting diode.

  In order to solve the above-described problems, the present invention provides a pair of metal substrates, a hard resin portion for fixing the pair of metal substrates, an upper and lower electrode type light emitting diode, the metal substrate and the upper and lower electrode type light emission. It is an object of the present invention to provide a light emitting diode unit which is composed of at least a conductive connecting member for connecting an upper electrode of a diode and a method for manufacturing the light emitting diode unit. An object of the present invention is to provide a light emitting diode unit that is excellent in mass productivity, withstands a large current and thermal stress, and is maintained at high strength, and a method for manufacturing the light emitting diode unit.

(First invention)
The light-emitting diode unit of the first invention includes two metal substrates separated in an insulating state through a slit portion, a vertical electrode type light-emitting diode in which a lower electrode is joined to one of the metal substrates, and the vertical electrode type A conductive connecting member for joining the upper electrode of the light emitting diode and the other of the metal substrate; and thermosetting formed on at least both sides of the upper and lower electrode type light emitting diode across the slit portion on the two metal substrates. Characterized in that it comprises at least a hard resin portion made of a conductive resin and a sealing material for sealing the upper and lower electrode type light emitting diodes on the inner side surrounded by the hard resin portion made of a pre-thermosetting resin. To do.

(Second invention)
In the light-emitting diode unit of the second invention, the hard resin portion of the thermosetting resin of the first invention has a shape surrounding the entire circumference by placing the upper and lower electrode type light-emitting diodes at the center across the slit. And

(Third invention)
In the light emitting diode unit of the third invention, the hard resin portion of the thermosetting resin of the first invention or the second invention is a hard resin type thermosetting silicone.

(Fourth invention)
In the light emitting diode unit of the fourth invention, the sealing material of the first to third inventions is an elastomer type thermosetting silicone having a hardness of Shore A (rubber hardness) of 15 to 85, preferably 20 to 80. It is characterized by being.

(Fifth invention)
In the light emitting diode unit of the fifth invention, a phosphor-containing film body is provided on the surface of the sealing material of the first to fourth inventions.

(Sixth invention)
In the light-emitting diode unit of the sixth invention, the hard resin portion of the thermosetting resin in the first to fifth inventions contains a phosphor.

(Seventh invention)
According to a seventh aspect of the present invention, there is provided a method of manufacturing a light emitting diode unit comprising: a step of providing a plurality of metal substrates separated by a slit portion in a connected state by pressing a metal plate; Joining the lower electrode of the electrode type light emitting diode, the upper electrode of the upper and lower electrode type light emitting diode and the conductive connection member, the conductive connection member and the other of the pair of metal substrates by eutectic solder; A step of applying a thermosetting resin on at least both sides of the upper and lower electrode type light emitting diodes across the slit portions on each pair of metal substrates, and providing a hard resin portion that has been cured; and a hard surface provided on each of the pair of metal substrates It is characterized by comprising at least a step of covering the upper and lower electrode type light emitting diodes with a sealing material inside the resin part.

(Eighth invention)
According to an eighth aspect of the present invention, there is provided a method of manufacturing a light emitting diode unit comprising: a step of providing a plurality of metal substrates connected in a connected state by a metal plate by pressing or the like, and a slit portion on each of the pair of metal substrates. A step of applying a thermosetting resin on at least both sides of the upper and lower electrode type light emitting diodes and providing a cured hard resin part, one of the pair of metal substrates and the lower electrode of the upper and lower electrode type light emitting diodes, The upper electrode of the upper and lower electrode type light emitting diode and the conductive connection member, the step of joining the conductive connection member and the other of the pair of metal substrates with eutectic solder, and the hard provided on the pair of metal substrates It is characterized by comprising at least a step of covering the upper and lower electrode type light emitting diodes with a sealing material inside the resin part.

(9th invention)
In the light emitting diode unit manufacturing method according to the ninth aspect of the present invention, the connection state of the pair of metal substrates of the seventh aspect or the eighth aspect comprises a weak portion, and the weak portion is separated into a single light emitting diode unit. Features.

(10th invention)
In the method for manufacturing a light emitting diode unit according to a tenth aspect, the metal substrate including the fragile portion according to the seventh to ninth aspects comprises a lead frame.

(11th invention)
In the method for manufacturing a light emitting diode unit according to an eleventh aspect, the hard resin portion and / or the sealing material according to the seventh aspect to the tenth aspect includes a phosphor.

(Twelfth invention)
In the method for manufacturing a light emitting diode unit according to a twelfth aspect, a phosphor-containing film body is provided on the surface of the sealing material according to the seventh to tenth aspects.

  According to the present invention, since a light emitting diode unit composed of a pair of metal substrates, a hard resin portion, an upper and lower electrode type light emitting diode, and a conductive connecting member is configured, heat dissipation is good and a large current can flow. It can be set as a high-intensity light emitting diode unit.

  According to the present invention, since wire bonding or the like is not used, it is possible to obtain a light emitting diode unit that is not only highly reliable for a long period of time but also inexpensive and excellent in mass production.

  According to the present invention, since a pair of metal substrates can be obtained from a lead frame, a light emitting diode unit excellent in mass productivity can be obtained.

  According to the present invention, a linear or planar light source can be obtained by arranging light emitting diode units in series and / or in parallel, and is optimal as a backlight for lighting devices, display devices, displays and advertisements. is there.

  According to the present invention, since the upper electrode of the upper and lower electrode type light emitting diodes connected to one metal substrate and the other metal substrate are connected by, for example, a plate-like conductive connecting member, a large current flows. In addition to being excellent in heat dissipation, it can be relieved even if thermal stress occurs. In particular, according to the present invention, when eutectic solder is used for each connection portion, a light emitting diode unit composed of upper and lower electrode type light emitting diodes free from vibrations and having no vibration applied to the junction and / or the light emitting layer is obtained. Can now.

  According to the present invention, the upper and lower electrode type light emitting diode can be easily converted into a desired color only by changing the kind of the phosphor-containing film body.

(First invention)
The light-emitting diode unit of the first invention is composed at least of two metal substrates, one upper and lower electrode type light-emitting diode, a conductive connecting member, a hard resin portion, and a sealing material. The two metal substrates are separated in an insulating state through a slit portion. In the upper and lower electrode type light emitting diodes, a lower electrode is bonded to one side of the metal substrate, and an upper electrode is bonded to the other side of the metal substrate by eutectic solder via the conductive connection member. The hard resin portion is made of a thermosetting resin material formed on at least both sides of the upper and lower electrode type light emitting diodes across the slit portion on the two metal substrates. The hard resin portion can be formed in two rectangular shapes or a shape that can easily seal the sealing material. The sealing material is placed inside the hard resin portion made of a pre-thermosetting resin material, and seals the upper and lower electrode type light emitting diodes. The upper and lower electrode type light emitting diodes may be gallium nitride based light emitting diodes.

  When a blue light-emitting diode is used, the phosphor-containing film body uses a phosphor that emits yellow light and emits yellow light, or emits green light when excited by blue light. And a phosphor emitting red light. In addition, when using a near-ultraviolet light emitting diode, the phosphor-containing film body includes three types of phosphors that are excited by near ultraviolet light and emit blue light, phosphors that emit green light, and phosphors that emit red light. And use. The phosphor-containing film body made of the phosphor is provided on the surface of the sealing material, and can convert the color of light from the upper and lower electrode type light emitting diodes into a desired color.

  Since the light emitting diode unit has a large heat dissipation effect from the metal substrate and the conductive connecting member, a large current (for example, 350 mmA or more) can flow, and a light emitting diode unit with high luminance can be obtained. In particular, when the conductive connecting member is a metal plate, not only a large current flows but also a heat dissipation effect can be improved. The metal substrate and / or the conductive connection member can be irradiated with light from the upper and lower electrode light emitting diodes through a transparent sealing material by applying gold or silver plating. Furthermore, the metal substrate separated and provided in an insulating state can be handled as one component because the thermosetting resin is formed on both sides across the slit portion.

(Second invention)
In the light emitting diode unit of the second invention, the hard resin portion of the thermosetting resin of the first invention has a shape surrounding the periphery around the upper and lower electrode type light emitting diodes, and is bonded across the slits of the pair of metal substrates. Therefore, the mutual metal substrates can be held with high strength. In addition, the hard resin portion is circular, oval, square, rectangular, etc., and without providing a special reflector, a light emitting diode unit in which an upper and lower electrode type light emitting diode is sealed by putting a sealing material inside is provided. be able to. The hard resin portion having the shape is easy to dispose the upper and lower electrode type light emitting diodes at the center portion, and the sealing material is difficult to flow out to the outside.

(Third invention)
In the light emitting diode unit of the third invention, the hard resin portion of the thermosetting resin in the first invention or the second invention is not only easy to form and cure by using a hard resin type thermosetting silicone, The pair of metal substrates can be held while maintaining a predetermined interval.

(Fourth invention)
In the light-emitting diode unit of the fourth invention, the sealing material of the first to third inventions is an elastomer-type thermosetting silicone and has a hardness of Shore A (rubber hardness) of 15 to 85, preferably 20 To 80, the upper and lower electrode type light emitting diodes can be held. The sealing material having the hardness is hard enough to absorb the heat stress generated when a large current flows from one of the electrode portions to the other of the electrode portions, and can reduce the stress applied to the joint portion.

(Fifth invention)
In the light-emitting diode unit of the fifth invention, a phosphor-containing film body having a desired color is provided on the surface of the sealing material in the first to fourth inventions. The phosphor-containing film body can convert the color of light emitted from the upper and lower electrode type light emitting diodes into a desired color.

(Sixth invention)
In the light-emitting diode unit of the sixth invention, the hard resin portion of the thermosetting resin of the first to fifth inventions contains a phosphor in advance. Since the hard resin portion contains a phosphor, together with the phosphor-containing film body provided on the surface of the sealing material, the light emitted from the side direction of the upper and lower electrode type light emitting diodes, It can be converted into a desired color.

(Seventh invention)
According to a seventh aspect of the present invention, there is provided a light emitting diode unit manufacturing method including a step of providing a plurality of pairs of metal substrates, a step of bonding upper and lower electrode type light emitting diodes to the metal substrate, and a hard resin portion straddling the pair of metal substrates. It comprises at least a process and a process of sealing the upper and lower electrode type light emitting diodes. In the step of providing a plurality of the pair of metal substrates, a single metal plate is separated by a slit or the like by a press or the like, and a plurality of the pair of metal substrates are provided in a connected state. The step of joining the upper and lower electrode type light emitting diodes to the metal substrate includes one of each of the pair of metal substrates, a lower electrode of the upper and lower electrode type light emitting diode, an upper electrode of the upper and lower electrode type light emitting diode, a conductive connecting member, and the conductive material. The joining member and the other of the pair of metal substrates are joined together by passing eutectic solder, for example, through a reflow furnace.

  In the step of providing the hard resin portion straddling the pair of metal substrates, a thermosetting resin is applied and cured on at least both sides of the upper and lower electrode type light emitting diodes. In the step of sealing the upper and lower electrode type light emitting diodes, the upper and lower electrode type light emitting diodes are provided at the inner central portion surrounded by the hard resin portion provided on each of the pair of metal substrates, and a sealing material is formed thereon. Cover with. The manufacturing method is suitable for mass production, and an inexpensive light emitting diode unit can be obtained.

(Eighth invention)
According to an eighth aspect of the present invention, there is provided a light emitting diode unit manufacturing method comprising: pressing a single metal plate or the like to provide a plurality of pairs of metal substrates separated by a slit portion in a connected state; It differs from the seventh invention in that a step of applying a thermosetting resin on at least both sides of the upper and lower electrode type light emitting diodes across the upper slit portion and providing a hardened hard resin portion is provided. The difference in the process between the seventh invention and the eighth invention can be selected by assembling the light emitting diode unit.

(9th invention)
According to a ninth aspect of the present invention, there is provided a light emitting diode unit manufacturing method according to the seventh or eighth aspect of the present invention, wherein a continuous state of one metal plate is made of a weak portion, and finally, the weak portion is separated to obtain a single light emitting diode unit. It is said. A number of light emitting diode units can be provided on the one substrate. That is, the substrate can be separated from the fragile portion after the rigid resin portion and the upper and lower electrode type light emitting diodes are attached consistently to form one light emitting diode unit.

(10th invention)
According to a tenth aspect of the present invention, there is provided a method for manufacturing a light emitting diode unit according to the seventh to ninth aspects, wherein a plurality of light emitting diode units are fabricated on a lead frame having a weak portion on a metal substrate. Since the pair of metal substrates includes at least one continuous portion, after the light emitting diode unit is completed, it can be easily separated into individual light emitting diode units by pressing or the like, for example. .

(11th invention)
In the method for manufacturing a light emitting diode unit according to an eleventh aspect of the invention, a phosphor is included in the hard resin portion and / or the sealing material of the seventh to tenth aspects of the invention. The phosphor contained in the hard resin portion and / or the sealing material converts light emitted from the upper and lower electrode type light emitting diodes into a desired color.

(Twelfth invention)
In the method for manufacturing a light emitting diode unit according to the twelfth aspect, a phosphor-containing film body having a desired color is provided on the surface of the sealing material according to the seventh to tenth aspects. The phosphor-containing film body can convert the color of light emitted from the upper and lower electrode type light emitting diodes into a desired color.

  FIGS. 1A to 1C show a first embodiment of the present invention. FIG. 1A is a plan view for explaining a state in which upper and lower electrode type light emitting diodes are attached to a pair of metal substrates. (B) is a schematic sectional view of a light emitting diode unit. The schematics shown in FIGS. 1A to 1C are different from the actual dimensional ratio. 1A and 1B, a pair of metal substrates 111 and 112 in this embodiment are made of aluminum, copper, or an alloy thereof, and gold and / or silver plating is performed as necessary. .

  The pair of metal substrates 111 and 112 are insulated from each other through the slit 14. The hard resin portions 151 and 152 made of thermosetting resin are connected to each other at both ends of the metal substrates 111 and 112 with the upper and lower electrode type light emitting diodes 12 interposed therebetween. For example, the height of the hard resin portions 151 and 152 is about 2.0 mm, the metal substrates 111 and 112 are square 10 mm × 10 mm, and the width of the slit 14 therebetween is 0.5 mm. The upper and lower electrode type light emitting diodes 12 have a size of 1.0 mm × 1.0 mm and a thickness of 0.5 mm. Further, the hard resin portions 151 and 152 may be reflectors that reflect light.

  The lower electrode type light emitting diode 12 has a lower electrode joined to the metal substrate 111. The upper electrode of the upper and lower electrode type light emitting diode 12 is bonded to the metal substrate 112 through the conductive connection member 13. The joining is performed simultaneously by passing through a reflow furnace using eutectic solder. The upper and lower electrode type light emitting diodes 12 or the hard resin portions 151 and 152 may be attached to the metal substrates 111 and 112 first. The hard resin portions 151 and 152 are paste-like when uncured and react with moisture in the air when a one-component condensation type liquid silicone adhesive blended with a special filler is used to increase thermal conductivity. It cures while releasing a small amount of condensate.

  In FIG. 1C, the upper and lower electrode type light emitting diodes 12 and the space between the hard resin portions 151 and 152 are filled with the transparent resin member 16 and the upper and lower electrode type light emitting diodes 12 are sealed. The transparent resin member 16 is provided with or mixed with a phosphor-containing film (not shown) at the top or inside thereof to convert the color of light emitted from the upper and lower electrode type light emitting diodes 12 into a desired color.

  FIGS. 2 (a) to 2 (c) show a second embodiment of the present invention. FIG. 2 (a) is a plan view for explaining a state where upper and lower electrode type light emitting diodes are attached to a pair of metal substrates. (B) is a schematic sectional view of a light emitting diode unit. 2A and 2B, the difference from the first embodiment is that the upper and lower electrode type light emitting diodes 12 and the conductive connection member 13 are surrounded by a circular hard resin portion 21. FIG.

  Since the hard resin portion 21 has a circular shape, as shown in FIG. 2 (c), it is convenient because the upper and lower electrode type light emitting diodes and the like are not leaked to an unnecessary portion by a sealing material. . The circular hard resin portion 21 is not limited to a circular cylindrical shape, but includes an elliptical shape, a square shape, a rectangular shape, and other deformed shapes.

  FIGS. 3A to 3C show a third embodiment of the present invention. FIG. 3A is a plan view for explaining a state in which upper and lower electrode type light emitting diodes are attached to a pair of metal substrates. (B) is a schematic sectional view of a light emitting diode unit. 3 (a) and 3 (b), the difference from the first and second embodiments is that the shape of the hard resin portions 351 and 352 is on the inner side and surrounds a part of the upper and lower electrode type light emitting diode 12. This is the point. That is, the hard resin portions 351 and 352 do not surround the entire circumference of the upper and lower electrode type light emitting diodes as in the second embodiment, but have a shape surrounding a part thereof. Further, the hard resin portions 351 and 352 do not have to be exactly the same as those in FIG. 3, and a region not partially surrounded is left.

  FIGS. 4A to 4C are views for explaining a lead frame when manufacturing a light emitting diode unit according to a fourth embodiment of the present invention. In FIG. 4A, a large number of a pair of metal substrates 111 and 112 are connected to the metal plate 41 through slits and fragile portions. That is, the pair of metal substrates 111 and 112 are surrounded by the weak portions 471, 472, 473 and 474 and the slits 42, 43, 44 and 45.

  For example, a circular hard resin portion 21 as shown in FIG. 2 is attached to the pair of metal substrates 111 and 112 in the metal plate 41 in the above state by an adhesive or the like. Thereafter, the upper and lower electrode type light emitting diodes 12 and the conductive connection member 13 are attached in the hard resin portion 21 by eutectic solder or the like. In FIG. 4, (B) and (C) can be reversed in manufacturing.

  As the upper and lower electrode type light emitting diode, a gallium nitride based upper and lower electrode type light emitting diode is used. For example, an active layer is provided between a p-type gallium nitride semiconductor layer and an n-type gallium nitride semiconductor layer. The gallium nitride-based upper / lower electrode type light emitting diode can obtain high luminance by flowing a large current.

  The sealing material can seal only the periphery of the upper and lower electrode type light emitting diodes. The sealing material 16 can be of an elastomer type. The elastomer type resin preferably has a Shore A (rubber hardness) of 15 to 85, preferably 20 to 80. The transparent sealing material having the hardness can relieve the thermal stress applied to the connection portion and the like.

  Since the metal substrates 111 and 112 are exposed outside the region where the hard resin portion is provided, terminals or connectors for attaching to the power source or other light emitting diode units can be provided as necessary. In addition, a phosphor-containing film body may be provided on the sealing material 16 or a lens may be provided.

Comparative example

  The conventional gallium nitride upper / lower electrode type light emitting diode in which gold wires are connected by ultrasonic waves and the gallium nitride upper / lower electrode type light emitting diode of the present invention joined by eutectic solder and a metal member will be compared. In the conventional example, two gold wires with a diameter of 30 μm are used, and the defect of light emission is not caused by ultrasonic vibration of a wire bonder in which the upper electrode of the gallium nitride based upper and lower electrode type light emitting diode and the other of the metal substrate are connected by ultrasonic wire bonding. About 10% of non-defective products were generated. Furthermore, when 350 mA was energized, burning due to an energization abnormality of about 4% occurred. In the examples of the present invention, no defective product was generated even in the connection step and in the energization of 350 mA to 500 mA.

  As mentioned above, although the Example of this invention was explained in full detail, this invention is not limited to the said Example. The present invention can be modified in various ways without departing from the scope of the claims. The upper and lower electrodes of the upper and lower electrode type light emitting diode of the present invention, the metal substrate, the metal member, etc. are connected by eutectic solder, eutectic solder paste, eutectic solder and flux, gold-tin eutectic solder paste, indium eutectic solder A publicly known or well-known thing can be used. The eutectic solder includes, for example, gold and tin (20%), gold and tin (90%), gold and silica (3.15%), gold and germanium (12%), and others, tin-copper-nickel system , Tin-silver, tin-silver-copper, tin-silver-bismuth-indium, and tin-zinc eutectic solder. As the upper and lower electrode type light emitting diodes of the present invention, known or known ones can be used as described above. As the hard resin part, the sealing material, the phosphor-containing film body, and the upper and lower electrode type light emitting diodes used in the present invention, known or well-known ones can be used.

(A) to (C) are the first embodiment of the present invention, (A) is a plan view for explaining a state in which the upper and lower electrode type light emitting diodes are attached to a pair of metal substrates, and (B) is (A). (C) is a schematic sectional drawing of a light emitting diode unit. (Example 1) (A) to (C) are the second embodiment of the present invention, (A) is a plan view for explaining a state in which the upper and lower electrode type light emitting diodes are attached to a pair of metal substrates, and (B) is (A). (C) is a schematic sectional drawing of a light emitting diode unit. (Example 2) (A) to (C) are the third embodiment of the present invention, (A) is a plan view for explaining a state in which the upper and lower electrode type light emitting diodes are attached to a pair of metal substrates, and (B) is (A). (C) is a schematic sectional drawing of a light emitting diode unit. (Example 3) (A) to (c) are diagrams for explaining a lead frame when a light emitting diode unit is fabricated in a fourth embodiment of the present invention. Example 4

Explanation of symbols

11 ... Metal plate 111 ... Metal substrate (one side)
112 ... Metal substrate (the other)
DESCRIPTION OF SYMBOLS 12 ... Upper and lower electrode type light emitting diode 13 ... Conductive connection member 14 ... Slit 151, 152 ... Hard resin part 16 ... Sealing material 41 ... Metal plate 42, 43, 44, 45, 46 ... slit 471, 472, 473, 474 ... weak part

Claims (12)

Two metal substrates separated in an insulating state through a slit portion;
An upper and lower electrode type light emitting diode having a lower electrode bonded to one of the metal substrates;
A conductive connecting member for joining the upper electrode of the upper and lower electrode type light emitting diode and the other of the metal substrate;
On the two metal substrates, a hard resin portion made of a thermosetting resin formed on at least both sides of the upper and lower electrode type light emitting diodes across the slit portion,
A sealing material for sealing the upper and lower electrode type light emitting diodes on the inner side surrounded by a hard resin portion made of a pre-thermosetting resin,
A light-emitting diode unit comprising:   2. The light emitting diode unit according to claim 1, wherein the hard resin portion of the thermosetting resin is arranged so as to surround the entire periphery of the upper and lower electrode type light emitting diodes across the slit. .   The light emitting diode unit according to claim 1 or 2, wherein the hard resin portion of the thermosetting resin is a hard resin type thermosetting silicone.   4. The sealing material according to claim 1, wherein the sealing material is an elastomer type thermosetting silicone having a hardness of Shore A (rubber hardness) of 15 to 85, preferably 20 to 80. A light-emitting diode unit according to claim 1.   5. The light-emitting diode unit according to claim 1, wherein a phosphor-containing film body is provided on a surface of the sealing material.   The light emitting diode unit according to any one of claims 1 to 5, wherein the hard resin portion of the thermosetting resin contains a phosphor. A step of providing a plurality of metal substrates in a connected state by a pair of metal substrates separated by a slit portion by pressing a metal plate,
One of each of the pair of metal substrates, a lower electrode of the upper / lower electrode type light emitting diode, an upper electrode of the upper / lower electrode type light emitting diode, a conductive connection member, and the conductive connection member and the other of the pair of metal substrates. Joining with eutectic solder;
Applying a thermosetting resin to at least both sides of the upper and lower electrode type light emitting diodes across the slits on each of the pair of metal substrates, and providing a hardened resin part,
A step of covering the upper and lower electrode type light emitting diodes with a sealing material on the inner side surrounded by a hard resin portion provided on each of the pair of metal substrates;
A method for producing a light emitting diode unit, comprising: A step of providing a plurality of metal substrates in a connected state by a pair of metal substrates separated by a slit portion by pressing a metal plate,
Applying a thermosetting resin to at least both sides of the upper and lower electrode type light emitting diodes across the slits on each of the pair of metal substrates, and providing a hardened resin part,
One of each of the pair of metal substrates, a lower electrode of the upper / lower electrode type light emitting diode, an upper electrode of the upper / lower electrode type light emitting diode, a conductive connection member, and the conductive connection member and the other of the pair of metal substrates. Joining with eutectic solder;
A step of covering the upper and lower electrode type light emitting diodes with a sealing material on the inner side surrounded by a hard resin portion provided on each of the pair of metal substrates;
A method for producing a light emitting diode unit, comprising:   The light emitting diode unit manufacturing method according to claim 7 or 8, wherein the connection state of the pair of metal substrates includes a weak portion, and the weak portion is separated into one light emitting diode unit. Method.   10. The method of manufacturing a light emitting diode unit according to claim 7, wherein the metal substrate having the fragile portion is formed of a lead frame. 11.   The method for manufacturing a light emitting diode unit according to any one of claims 7 to 10, wherein the hard resin portion and / or the sealing material contains a phosphor.   The method for manufacturing a light emitting diode unit according to any one of claims 7 to 10, wherein a phosphor-containing film body is provided on a surface of the sealing material.

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