JP2008130504A - Manufacturing method of image display device and image display device manufactured by this manufacturing method - Google Patents

Abstract

An image display device with reduced afterimages and high reliability and long life is provided by a method of reducing trap sites in an anodized film. Anodization for forming an insulating layer to be an electron acceleration layer Annealing is performed in an ozone atmosphere before, after, or before and after the treatment. The thin film electron source of the image display device manufactured by this method has 1.5 × 1018 or less defects whose electron acceleration layer has a defect order of 1.5 eV or less.
[Selection figure] None

Description

  The present invention relates to an image display device, and more particularly to a method for manufacturing an image display device including a thin film electron source and an image display device manufactured by the manufacturing method.

  The thin film electron source basically has a structure in which three kinds of thin films of a lower electrode (first electrode), an electron acceleration layer (insulating layer), and an upper electrode (second electrode) are laminated, and between the lower electrode and the upper electrode. A voltage is applied to discharge electrons from the surface of the upper electrode into the vacuum.

  For example, MIM (Metal-Insulator-Metal) type in which metal-insulator-metal is laminated, MIS (Metal-Insulator-Semiconductor) type in which metal-insulator-semiconductor is laminated, metal-insulator-semiconductor-metal type, etc. is there. For example, the MIM type is described in Patent Document 1, the metal-insulator-semiconductor type is a MOS type described in Non-Patent Document 1, and the metal-insulator-semiconductor-metal type is HEED type described in Non-Patent Document 2. The EL type is reported in Non-Patent Document 3 and the like, and the porous silicon type is reported in Non-Patent Document 4 and the like.

  The principle of operation of the thin film electron source will be described with reference to FIG. FIG. 1 is an explanatory diagram of the operating principle of the MIM type thin film electron source. In the MIM type thin film electron source, a first electrode (hereinafter also referred to as a lower electrode) 11 as a first electrode is formed on an insulating substrate such as glass, and an electron acceleration layer (hereinafter simply referred to as an insulating layer) is formed thereon. The second electrode (hereinafter also referred to as the upper electrode) 13 is formed so as to cover the insulating layer 12. When a drive voltage Vd is applied between the upper electrode 13 and the lower electrode 11 to make the electric field in the insulating layer 12 about 1 to 10 MV / cm, electrons near the Fermi level in the lower electrode 11 are caused by a tunnel phenomenon. It passes through the barrier and is injected into the conduction band of the electron acceleration layer 12 and the upper electrode 13 to become hot electrons.

  These hot electrons are scattered in the upper electrode 13 in the insulating layer 12 which is an electron acceleration layer and lose energy, but some hot electrons having energy higher than the work function φ of the upper electrode 13 are in vacuum 20 Released into.

  Other thin film electron sources are common in that they accelerate electrons and emit electrons through the thin upper electrode. Such a thin film electron source can generate an electron beam from an arbitrary place when a matrix is formed by orthogonalizing a plurality of upper electrodes and a plurality of lower electrodes. Can be used.

Until now, electron emission has been observed from MIM (Metal-Insulator-Metal) having an Au—Al ₂ O ₃ —Al structure. Since the thin film electron source array uses a thin upper electrode, an upper bus electrode serving as a normal power supply line is added for application to an image display device or the like. Patent Documents 1-3 and Non-Patent Documents 1-4 can be cited as disclosures of this type of prior art.
JP-A-7-65710 Japanese Patent Laid-Open No. 10-294470 Japanese Patent Laid-Open No. 7-258893 K. Yokoo, et al, "Emission Characteristics of metal-oxide-semiconductor electron tunneling cathode," J. Vac. Sci. Technol., B11 (2), pp. 429-432 (1993) N. Negishi, et al, “High Efficiency Electron-Emission in Pt / SiOx / Si / Al Structure,” Jpn. J. Appl. Phys., Vol 36, Part 2, No. 7B, pp. L939-L941 (1997 ) Shinji Okamoto, "Electron emission from EL thin film-Thin film cold cathode", Applied Physics, Vol. 63, No. 6, pages 592 to 595 (1994) Nobuyoshi Koshida, “Light emission of porous silicon -Beyond the frame of indirect and direct transition”, Applied Physics, Vol. 66, No. 5, pp. 437 to 443 (1997)

  An anodic oxide film is used for the insulating layer which is the electron acceleration layer of the thin film electron source. Aluminum or an aluminum alloy (aluminum-neodymium or the like) is used for the lower electrode (first electrode) of the thin film electron source, and the lower electrode is treated by being immersed in a solution mainly composed of an organic solvent. Therefore, the generated anodic oxide film contains impurities such as carbon and moisture in the film. Impurities and moisture cause trap sites (film defects) that capture electrons. Conventionally, after anodizing treatment, the insulating film is stabilized by desorbing impurities and moisture in the insulating film by annealing. However, in the conventional annealing, a large number of trap sites for capturing charges still remain in the insulating film or at the insulating film / substrate interface. The electrons trapped in the trap site cause a display defect called an afterimage. Further, when an insulating film (anodized film) having many trap sites is used for the electron acceleration layer, the insulating property is also impaired, the reliability of the electron source is impaired, and the life is deteriorated. In addition, Patent Document 2 discloses the related art relating to impurities in the anodic oxide film. The anodic oxide film discussed in Patent Document 2 is only related to insulation, and is a thin film electron source. It does not suggest a problem as an electron acceleration layer. Patent Document 3 discloses control of impurities in the film according to conditions for anodization (anodizing treatment). However, the amount of impurities and the amount of film defects are not considered.

  An object of the present invention is to provide a highly reliable and long-lasting image display device in which an afterimage is reduced by a method for reducing trap sites in an anodized film.

The method for producing an image display device of the present invention is characterized by annealing in an ozone atmosphere before or after or before or after anodizing to form an insulating layer to be an electron acceleration layer. To do. The thin film electron source of the image display device manufactured by this method has 1.5 × 10 ¹⁸ or less defects whose electron acceleration layer has a defect order of 1.5 eV or less.

An afterimage is a phenomenon that occurs when electrons trapped in a shallow level (low energy) trap site are re-emitted. Therefore, it is necessary to reduce trap sites in a specific energy range (<1.5 eV or less). By setting the number of defects having a defect level of 1.5 eV or less to 1.5 × 10 ¹⁸ / cm ³ or less, an image display device with little afterimage can be obtained.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings of the examples. First, portions common to the embodiments of the thin film electron source manufacturing method constituting the image display device of the present invention and the image display device obtained by this manufacturing method will be described.

  FIGS. 2 to 10 are a plan view and a cross-sectional view of relevant parts for explaining a method of manufacturing a thin film electron source according to the present invention, FIG. 3 is a view subsequent to FIG. 2, FIG. 4 is a view subsequent to FIG. .. FIG. 10 is a diagram following FIG. First, a metal film for a lower electrode (first electrode) 11 is formed on an insulating substrate (hereinafter also referred to as an insulating substrate) 10 suitable for glass. Aluminum (Al) or an Al alloy is used as the lower electrode material. The reason why Al or Al alloy is used is that a good quality insulating film can be formed by anodic oxidation. Here, an Al—Nd alloy doped with 2 atomic% of neodymium (Nd) was used. For example, a sputtering method is used for film formation. The film thickness is 300 nm (FIG. 2).

  After the formation of the Al—Nd alloy, the stripe-shaped lower electrode 11 is formed by a photo process and an etching process. Etching uses, for example, wet etching with a mixed aqueous solution of phosphoric acid, acetic acid, and nitric acid (FIG. 3).

  Next, the first protective insulating layer 14 that restricts the electron emission portion and prevents electric field concentration on the edge of the lower electrode 11 and the insulating layer 12 that is an electron acceleration layer are formed by anodic oxidation (anodization). First, a portion to be an electron emission portion on the lower electrode 11 is masked with a resist film 25, and the other portion is selectively thickly anodized to form the first protective insulating layer 14 (FIG. 4). When the formation voltage (anodization voltage) is 100 V, the protective insulating layer 14 having a thickness of about 140 nm is formed.

  Next, the resist film 25 is removed, and the remaining surface of the lower electrode 11 is anodized. For example, when the formation voltage is 6 V, an insulating layer, that is, an electron acceleration layer 12 having a thickness of about 10 nm is formed on the lower electrode 11 (FIG. 5). Next, heat treatment is performed to sublimate and desorb moisture and impurities in the protective insulating layer 14 and the electron acceleration layer (insulating layer 12) or on the surface of the electron acceleration layer 12.

  In the thin film electron source constituting the image display apparatus of this embodiment, the electric field strength applied in the insulating layer which is the electron acceleration layer 12 is about 1 to 10 MV / cm. When the thickness of the electron acceleration layer is reduced, it is necessary to lower the applied voltage. However, when the applied voltage is lowered, the hot electrode having energy higher than the work function φ of the upper electrode 13 is released into the vacuum 20. The amount of electrons will be reduced. For this reason, if the film thickness is excessively thinned, it will no longer serve as a highly efficient thin film electron source.

  Further, when the thickness of the electron acceleration layer 12 is increased, the required electric field strength can be obtained by increasing the applied voltage. As the applied voltage increases, the amount of hot electrons having energy equal to or higher than the work function φ of the upper electrode 13 as the second electrode increases. However, as the film thickness increases, the electron acceleration layer, which is an electron acceleration layer, is formed. The amount scattered in 12 also increases. For this reason, even when the film thickness is excessively increased, the film does not serve as a highly efficient thin film electron source.

  Therefore, there is an optimum range for the film thickness of the electron acceleration layer 12, and it is experimentally understood that if this film thickness range is 5 nm to 15 nm, it plays a role as a highly efficient thin film electron source. I came. Here, the film thickness of the electron acceleration layer 12 is 10 nm, but in order to set the film thickness to 10 nm in this way, the formation voltage may be 6 V, and when it is 5 nm, the formation voltage is 3 V. In the case of 15 nm, a predetermined film thickness can be obtained by setting the formation voltage to 9V.

  Next, an upper bus electrode film serving as a power supply line to the upper electrode (second electrode) 13, a second protective insulating layer 15 formed thereunder, a first metal layer (upper bus electrode) 26, a second The metal layer 27 is formed by sputtering, for example. As the second protective insulating layer 15, Si nitride was used, and the film thickness was 100 nm. When there is a pinhole in the protective insulating layer 14 formed by anodization, the second protective insulating layer 15 fills in the defect and plays a role of maintaining insulation between the lower electrode 11 and the upper bus electrode. Chromium (Cr) was used as the material of the first metal layer (upper bus electrode) 26, and Al—Nd alloy was used as the material of the second metal layer 27. Other examples of the first metal layer 26 include molybdenum (Mo), tungsten (W), titanium (Ti), and niobium (Nb). Other examples of the second metal layer 27 include Al, copper (Cu), Cr, A Cr alloy or the like is applicable. Regarding the film thickness, the first metal layer 26 is formed to several tens of nm, and the second metal layer 27 is formed to several μm (FIG. 6).

  Subsequently, the first metal layer 27 and the second metal layer (upper bus electrode) 27 are processed and formed so as to be orthogonal to the lower electrode 11 by a photoetching process. As the etchant, Cr of the first metal layer 26 is an aqueous solution of ammonium cerium nitrate, and the Al—Nd alloy of the second metal layer 27 is an aqueous solution of phosphoric acid, acetic acid, nitric acid, or the like (FIGS. 7 and 8).

  Next, the SiN of the second protective insulating layer 15 is dry-etched to open the electron emission portion (FIG. 9). Finally, the upper electrode 13 is formed. As this film formation method, for example, sputtering film formation is used. As the upper electrode 13, for example, a laminated film of iridium (Ir), platinum (Pt), and gold (Au) is used, and the film thickness is several nm, and is 5 nm here. The formed thin upper electrode 13 is in contact with the Cr film of the first metal layer 26 and the Al—Nd film of the second metal layer 27, and is supplied with power (FIG. 10).

  Next, an image display device configured using a thin film electron source array substrate (back substrate) in which the above thin film electron sources are arranged in a matrix, that is, a thin film electron source array substrate (FIG. 10), a phosphor screen on which a phosphor screen and an anode are formed. A method for forming a display device of the present invention by bonding a substrate (front substrate) through a spacer will be described.

  FIG. 11 is a diagram showing a front substrate of a display device using the thin film type electron source of the present invention. The front substrate is manufactured as follows. A light-transmitting glass or the like is used for the substrate 110. First, the black matrix 120 is formed for the purpose of increasing the contrast of the image display device. The black matrix 120 is formed by applying a mixed solution of PVA (polyvinyl alcohol) and sodium dichromate to the substrate 110 and exposing the portions other than the portions where the black matrix 120 is to be formed by irradiating with ultraviolet rays and then exposing the unexposed portions. The PVA is lifted off by applying a solution prepared by removing the graphite powder and removing the PVA.

Next, the red phosphor 111 is formed. After an aqueous solution in which phosphor particles are mixed with PVA (polyvinyl alcohol) and ammonium dichromate is applied on the substrate 110, the portion where the phosphor is to be formed is exposed to ultraviolet light to expose it, and unexposed portions are removed with running water. To do. In this way, the red phosphor 111 is patterned. The pattern is patterned in a stripe shape as shown in FIG. Similarly, a green phosphor 112 and a blue phosphor 113 are formed. As the phosphor, for example, Y ₂ O ₂ S: Eu (P22-R) is used for red, ZnS: Cu, Al (P22-G) is used for green, and ZnS: Ag, Cl (P22-B) is used for blue. .

  Next, after filming with a film such as nitrocellulose, Al is deposited on the entire substrate 110 to a thickness of about 75 nm to form a metal back 114. The metal back 114 serves as an acceleration electrode, that is, an anode. Thereafter, the substrate 110 is heated to about 400 ° C. in the atmosphere to thermally decompose organic substances such as a filming film and PVA. In this way, the display side substrate is completed.

  FIG. 12 is a view showing a cross section of an image display device using the thin film electron source of the present invention. The front substrate 110 and the rear substrate 10 manufactured as described above are sealed with the frit glass 115 around the surrounding frame 116 via the spacer 40. Sealing is performed in the atmosphere in order to remove the organic binder contained in the frit glass paste and to reduce the cost by eliminating equipment and troubles such as gas replacement.

FIG. 12 shows a portion corresponding to the AA ′ section and the BB ′ section of FIG. 11 of the bonded display panel. The height of the spacer 40 is set so that the distance between the front substrate 110 and the rear substrate 10 is about 1 to 3 mm. In FIG. 12, for the purpose of explanation, the spacers 40 are all set up for each phosphor dot that emits light in R (red), G (green), and B (blue). (Installation density) should be reduced and about 1 cm should be set. The sealed panel is exhausted to a vacuum of about 10 ⁻⁷ Torr and sealed.

  After vacuum sealing, the getter is activated and the vacuum in the panel is maintained. For example, in the case of a getter material containing barium (Ba) as a main component, a getter film can be formed by high frequency induction heating or the like. Further, a non-evaporable getter mainly composed of zirconium (Zr) may be used.

  Thus, in this embodiment, the distance between the front substrate 110 and the rear substrate 10 is as long as about 1 to 3 mm, so that the acceleration voltage applied to the metal back 114 can be set to a high voltage of 3 to 6 KV. Therefore, as described above, a phosphor for a cathode ray tube (CRT) can be used as the phosphor.

  FIG. 13A is a process diagram for collectively explaining a first embodiment of a method for manufacturing an image display device according to the present invention. In Example 1, after forming and processing the lower electrode (first electrode) 11 on the insulating substrate 10 such as glass, the first protective insulating layer 14 is formed.

After the first protective insulating layer 14 is formed, ozone (O ₃ ) treatment is performed. This ozone treatment is preferably an annealing treatment in an ozone atmosphere, immediately after the formation of the protective insulating layer 14. Thereafter, the electron acceleration layer 12 is formed.

  Thereafter, the second protective insulating layer 15, the first metal layer 26, and the second metal layer 27 are formed and processed, and then the upper electrode 13 is formed to manufacture the insulating substrate 10 side to be a thin film transistor substrate.

  On the other hand, a black matrix 120 and RGB phosphors 111, 112, and 113 are formed on the insulating substrate 110, and after filming, a metal back 114 is formed to manufacture a color filter substrate.

  The color filter substrate thus manufactured and the thin film transistor substrate are bonded together via the spacer 40, and the periphery is sealed with a frame (sealing frame) 116 and a frit glass 115. The sealed internal space is evacuated to complete the image display device.

According to the first embodiment, an image display device with few afterimages can be obtained by setting defects with a defect level of 1.5 eV or less to 1.5 × 10 ¹⁸ defects / cm ³ or less.

  FIG. 13B is a process diagram for collectively explaining a second embodiment of the method for manufacturing the image display device according to the present invention. Similarly to Example 1, after forming and processing a lower electrode (first electrode) 11 on an insulating substrate 10 such as glass, a first protective insulating layer 14 is formed. After the formation of the first protective insulating layer 14, the electron acceleration layer 12 is formed. After the electron acceleration layer 12 is formed, ozone treatment is performed by annealing in an ozone atmosphere.

  Thereafter, the second protective insulating layer 15, the first metal layer 26, and the second metal layer 27 are formed and processed, and then the upper electrode 13 is formed to manufacture the insulating substrate 10 side to be a thin film transistor substrate.

  On the other hand, a black matrix 120 and RGB phosphors 111, 112, and 113 are formed on the insulating substrate 110, and after filming, a metal back 114 is formed to manufacture a color filter substrate.

  The color filter substrate thus manufactured and the thin film transistor substrate are bonded together via the spacer 40, and the periphery is sealed with a frame (sealing frame) 116 and a frit glass 115. The sealed internal space is evacuated to complete the image display device.

Also in Example 1, it is possible to obtain an image display device with few afterimages by setting defects with a defect level of 1.5 eV or less to 1.5 × 10 ¹⁸ defects / cm ³ or less.

Example 3 is a combination of Example 1 and Example 2. After forming the first protective insulating layer 14, it was treated with ozone (O ₃ ), and after the electron acceleration layer 12 was formed, Ozone treatment by annealing.

  According to the third embodiment, film defects can be further reduced as compared with the first and second embodiments, and an image display apparatus with fewer afterimages can be obtained.

  FIG. 14 is a diagram for explaining the results of the defect evaluation using the TSC method for the thin film electron source obtained in the present invention. The TSC method (thermally stimulated current measurement method) is a well-known method as a technique for evaluating defects in thin film electron sources. In the TSC method, a defect is evaluated by releasing electrons (or holes) trapped in a specific defect level by heat and measuring a current generated at the time of opening. In FIG. 14, the solid line shows the defect evaluation of the thin film electron source manufactured by the conventional manufacturing method, and the dotted line shows the defect evaluation of the thin film electron source manufactured by the manufacturing method of the present invention. As is apparent from FIG. 14, it can be seen that the amount of defects at the specific defect level is significantly reduced by the ozone treatment of the present invention.

  FIG. 15 is a diagram for explaining the results of defect evaluation using the PSC method for the thin film electron source obtained in the present invention. The PSC method (photostimulated current measurement method) is also a well-known method as a technique for evaluating defects in thin film electron sources.

  The photo-stimulated current method has the same principle as the TSC method in the sense that the charges trapped in the defect are detrapped (detached) by external energy. TSC uses heat energy, whereas PSC uses light energy. The light irradiation energy used in this measurement is an energy of 1.5 eV to 4.5 eV. However, in practice, light in that energy range is irradiated in steps of, for example, 0.1 eV.

  The PSC method is a method for determining which energy has a large amount of detrapping according to a current fluctuation at the time of irradiation. In addition, since it is not easy experimentally to irradiate energy of 1.5 eV or less, the minimum irradiation energy is set to 1.5 eV. Incidentally, when an energy of 1.5 eV is irradiated, all charges of 1.5 eV or less are released. The maximum energy is 4.5 eV, which is also restricted by a practical experimental device for the same reason as described above on the low energy side. For reference, the relationship between the irradiation energy and the wavelength of light can be obtained by the equation “energy (eV) = 1240 / wavelength of light (nm)”.

  FIG. 16 shows the measurement of defects using the TSC method for the thin film electron source of the image display device manufactured by the manufacturing method of the present invention and the thin film electron source of the image display device manufactured by the conventional manufacturing method. It is a figure which shows the result of having calculated and compared defect density. As shown in FIG. 16, in the case where the ozone treatment was performed before the anodic oxidation as Example 1 of the present invention and the case where the ozone treatment was performed after the anodic oxidation as Example 2 of the present invention, the conventional manufacturing without ozone treatment was performed. It can be seen that the defect density is reduced to about half or less than that manufactured by the method. Although not shown in FIG. 16, the effect of Example 3 of the present invention is a synergistic effect of the effect of Example 1 and the effect of Example 2, and the defect density is further greatly reduced. Become.

FIG. 17 is a diagram for explaining current-voltage characteristics of a thin film electron source of an image display device manufactured by a conventional manufacturing method shown for comparison. Note that the current density (A / cm ² ) is shown on the vertical axis as current-voltage (IV) characteristics. In FIG. 17, (1) the solid line is the IV characteristic immediately after the voltage application for 1000 seconds, (2) the dotted line is for stopping the voltage application, and the IV characteristic after being left for 1 second, and (3) the one-dot chain line is for stopping the voltage application. Furthermore, the IV characteristic after standing for 10 seconds is shown.

  As the time elapses from (1) to (3), the accumulated charge (electrons) is released, so that the IV characteristic shifts in the negative direction (leftward in the drawing). Qualitatively, the smaller the shift amount, the smaller the accumulated charge amount, and the earlier the shift time, the smaller the trap amount and the lower the level (energy).

  FIG. 18 is a diagram for explaining the current-voltage characteristics of the thin film electron source of the image display device similar to that of FIG. 17 manufactured by using the ozone treatment of the present invention. Also in FIG. 18, (1) the solid line is the IV characteristic immediately after applying the voltage for 1000 seconds, (2) the dotted line is the voltage characteristic after stopping the voltage application for 1 second, and (3) the dotted line is the voltage applied. The IV characteristics after stopping and further leaving for 10 seconds are shown. Comparing FIG. 18 with FIG. 17, it can be seen that the shift amount after the first one second shown in (2) is large, that is, defects are detached at a high speed.

FIG. 19 is a schematic diagram for explaining an afterimage evaluation inspection method for an image display device according to the present invention. An afterimage evaluation inspection method will be briefly described with reference to FIG.
(1) First, as shown in FIG. 19A, the entire screen of the image display device is set to the halftone display 31 state. Here, a halftone whose brightness is 1/4 of the maximum brightness is defined. A portion indicated by reference numeral 32 is a white display scheduled range. The white display scheduled range 32 is arbitrary.
(2) Next, as shown in FIG. 19B, the white display scheduled range 32 is displayed with the maximum luminance (in the figure, the portion of the white display 33 in which “TEST” is displayed in white). For example, this state is held for 1000 seconds.
(3) Next, the white display 33 portion is returned to the original halftone display state. Ideally, the background portion (halftone display location 31) and the portion displaying the character should have the same luminance, but the portion displaying the maximum luminance has the same luminance because the shift of the threshold Vth is large. Must not. In a state where the maximum luminance is applied, Vth shifts in the most positive direction, and with time. Shift in the negative direction. When the shift in the negative direction is completed (where the injected charge has been exhausted), the luminance of the background and the character display portion are equivalent.

  When the above phenomenon occurs, even if a voltage for halftone display is applied, a desired current does not flow due to the Vth shift even in the portion displaying the maximum luminance, and the image is visually darker than the background. This will appear as an afterimage.

  FIG. 20 is a diagram visually comparing the afterimage evaluation between the image display device of the present invention that has been subjected to ozone treatment and the conventional image display device that has not been subjected to ozone treatment. In FIG. 20, the horizontal axis represents the elapsed time (seconds) immediately after the maximum luminance voltage is returned to the halftone luminance voltage, and the vertical axis is the character display portion / background luminance ratio (%). It is ideal that the vertical axis is always 100%, but it is defined that there is no problem if the luminance is restored to 95% or more after 1 second visually (sensory test). According to this definition, the conventional image display device without ozone treatment shown by a solid line is 95% at most, whereas the image display device of the present invention with ozone treatment shown by a dotted line already has 98% in less than 1 second. It recovers back and forth, and after 1 second it has recovered to a brightness very close to 100%.

  In the image display device using the thin film electron source manufactured in the present invention, the amount of defects in the thin film is greatly reduced, and there is very little afterimage, and it is possible to provide an image display device with a longer life.

It is a figure which shows the principle of operation of a thin film electron source. It is a figure which shows the manufacturing method of the thin film electron source of this invention. It is a figure following FIG. 2 which shows the manufacturing method of the thin film electron source of this invention. It is a figure following FIG. 3 which shows the manufacturing method of the thin film electron source of this invention. It is a figure following FIG. 4 which shows the manufacturing method of the thin film electron source of this invention. It is a figure following FIG. 5 which shows the manufacturing method of the thin film electron source of this invention. It is a figure following FIG. 6 which shows the manufacturing method of the thin film electron source of this invention. It is a figure following FIG. 7 which shows the manufacturing method of the thin film electron source of this invention. It is a figure following FIG. 8 which shows the manufacturing method of the thin film electron source of this invention. It is a figure following FIG. 9 which shows the manufacturing method of the thin film electron source of this invention. It is a figure which shows the front substrate of the image display apparatus using the thin film electron source of this invention. It is a figure which shows the cross section of the display apparatus using the thin film electron source of this invention. It is a figure which shows collectively the whole Example 1 of the manufacturing process of the image display apparatus of this invention. It is a figure which shows collectively the whole Example 2 of the manufacturing process of the image display apparatus of this invention. It is a figure explaining the result of having performed defect evaluation using the TSC method about the thin film electron source obtained by this invention. It is a figure explaining the result of having performed defect evaluation using the PSC method about the thin film electron source obtained by this invention. Defects are measured using the TSC method for the thin film electron source of the image display device manufactured by the manufacturing method of the present invention and the thin film electron source of the image display device manufactured by the conventional manufacturing method, and a defect density of 1.5 eV or less is calculated. It is a figure which shows the result compared by doing. It is a figure explaining the current-voltage characteristic of the thin film electron source of the image display apparatus manufactured with the conventional manufacturing method shown for a comparison. It is a figure explaining the current-voltage characteristic of the thin film electron source of the image display apparatus similar to FIG. 17 manufactured using the ozone treatment of this invention. It is a schematic diagram explaining the inspection method of the afterimage evaluation of the image display apparatus in this invention. It is the figure which compared visually afterimage evaluation of the image display apparatus of this invention which carried out ozone treatment, and the conventional image display apparatus which does not carry out ozone treatment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Insulating substrate, 11 ... 1st electrode (lower electrode), 12 ... Insulating layer (electron acceleration layer), 13 ... 2nd electrode (upper electrode), 14 ... 1st protection Insulating layer, 15 ... second protective insulating layer, 20 ... vacuum, 25 ... resist film, 26 ... first metal layer (upper bus electrode), 27 ... second metal layer (Upper bus electrode), 40 ... spacer, 110 ... face plate, 111 ... red phosphor, 112 ... green phosphor, 113 ... blue phosphor, 114 ... metal back, 115 ... frit glass, 116 ... frame.

Claims (14)

It has a stacked structure of a first electrode on an insulating substrate, an electron acceleration layer made of an insulating layer formed by anodizing the upper layer of the first electrode, and a second electrode formed on the electron acceleration layer. A method of manufacturing an image display device including a thin film electron source,
A method for manufacturing an image display device, comprising performing an annealing treatment in an ozone atmosphere before the anodizing treatment for forming the electron acceleration layer. In claim 1,
Immediately before the annealing treatment, a first protective insulating layer for limiting the region of the first electrode to be annealed and preventing electric field concentration on the first electrode is formed. Device manufacturing method. In claim 2,
After the annealing process, a second protective insulating layer is formed on the first protective insulating layer, and the second electrode is covered with the electron acceleration layer and the second protective insulating layer formed by the annealing process. Forming the image display device. It has a stacked structure of a first electrode on an insulating substrate, an electron acceleration layer made of an insulating layer formed by anodizing the upper layer of the first electrode, and a second electrode formed on the electron acceleration layer. A method of manufacturing an image display device including a thin film electron source,
A method for manufacturing an image display device, characterized by annealing in an ozone atmosphere after anodizing for forming the electron acceleration layer. In claim 4,
After the annealing process, a second protective insulating layer is formed on the first protective insulating layer, and the electron acceleration layer formed by the annealing process and the second protective insulating layer are covered with the second electrode. A manufacturing method of an image display device characterized by forming. It has a stacked structure of a first electrode on an insulating substrate, an electron acceleration layer made of an insulating layer formed by anodizing the upper layer of the first electrode, and a second electrode formed on the electron acceleration layer. A method of manufacturing an image display device including a thin film electron source,
A method for manufacturing an image display device, comprising annealing in an ozone atmosphere before anodizing to form the electron acceleration layer, and annealing in an ozone atmosphere again after the anodizing. In claim 6,
Immediately before the annealing treatment, a first protective insulating layer for limiting the region of the first electrode to be annealed and preventing electric field concentration on the first electrode is formed. Device manufacturing method. In claim 7,
After the annealing process, a second protective insulating layer is formed on the first protective insulating layer, and the electron acceleration layer formed by the annealing process and the second protective insulating layer are covered with the second electrode. A manufacturing method of an image display device characterized by forming. It has a stacked structure of a first electrode on an insulating substrate, an electron acceleration layer made of an insulating layer formed by anodizing the upper layer of the first electrode, and a second electrode formed on the electron acceleration layer. An image display device comprising a thin film electron source,
The image display device, wherein the electron acceleration layer has 1.5 × 10 ¹⁸ or less defects having a defect order of 1.5 eV or less. In claim 9,
An image display device comprising: a first protective insulating layer for preventing electric field concentration on the first electrode on the first electrode excluding the region to be annealed of the first electrode. In claim 10,
An image display device comprising: a second protective insulating layer on the first protective insulating layer; and the second electrode covering the electron acceleration layer and the second protective insulating layer. In claim 9,
An image display device, wherein the material constituting the first electrode is aluminum or an alloy of aluminum and neodymium. In claim 9,
An image display device, wherein the material constituting the second electrode is an iridium, platinum, gold, silver, nickel film or a laminated film of two or more of these. In claim 9,
An image display device, wherein the first protective insulating layer has a thickness of 5 nm to 15 nm.

Images