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JP2008198583A - Plasma generator - Google Patents

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JP2008198583A
JP2008198583A JP2007059181A JP2007059181A JP2008198583A JP 2008198583 A JP2008198583 A JP 2008198583A JP 2007059181 A JP2007059181 A JP 2007059181A JP 2007059181 A JP2007059181 A JP 2007059181A JP 2008198583 A JP2008198583 A JP 2008198583A
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plasma
microplasma
tube
plasma generator
electrode
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Shinya Kiryu
慎也 桐生
Fumitoshi Takamine
史寿 高峰
Inki Sai
允起 崔
Kazuo Terajima
和夫 寺嶋
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma generator capable of stably generating and maintaining high-density and high-energy-efficiency inductively-coupled microplasma, and of executing a process using the plasma. <P>SOLUTION: This plasma generator equipped with an inductively-coupled plasma generation coil 9 around an insulator tube, and also equipped with electrodes 3 and 4 for generating dielectric barrier discharge inside and outside of the tube is composed. By connecting the metal electrodes and a coil part to various power sources through cables, inductively-coupled plasma by dielectric barrier discharge, in particular, microplasma having a size not larger than 1 mm which becomes difficult to stably maintain by miniaturization is generated. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、高密度マイクロプラズマ発生装置、および、材料プロセシング応用に関する。  The present invention relates to a high-density microplasma generator and a material processing application.

現在、材料開発や生産技術等における多くの分野でプラズマによる材料プロセッシング技術が用いられており、今後も益々その重要性は高まるものと予想されている。  At present, plasma material processing technology is used in many fields such as material development and production technology, and its importance is expected to increase in the future.

例えば、半導体等の電子デバイスのプロセシングを例に挙げると、この様な電子デバイスのプロセシングにおいても、プラズマによるプロセシング技術は欠かせないことは周知の事実である。この様な電子デバイスは、最近、益々微細化が進んでおり、マイクロメートル、ないし、ナノメートルスケールの空間的局所プロセシングが必要になってきている。そのため、断面サイズがマイクロメータ乃至ナノメータオーダーの微小プラズマが要求されている。この様な要求にこたえるべくプラズマ(マイクロプラズマ)発生装置が、既に提案されている。(特開平8−298198号及び特開平8−306499号参照)。  For example, taking the processing of electronic devices such as semiconductors as an example, it is a well-known fact that plasma processing technology is indispensable in the processing of such electronic devices. Such electronic devices have been increasingly miniaturized recently, and spatial and local processing on a micrometer or nanometer scale is required. Therefore, there is a demand for microplasma whose cross-sectional size is on the order of micrometers to nanometers. A plasma (microplasma) generator has already been proposed to meet such demands. (See JP-A-8-298198 and JP-A-8-306499).

しかし、提案されている多くのプラズマ発生装置は、高圧容器若しくはプラズマ電極、及び、プラズマでプロセシングされるべき材料を容器内にセットしなければならず、さらに容器内に材料を搬送したり、容器内の材料を取り出したりする為の材料搬送機構も必要となり、その結果、容器を含むプラズマ発生装置自体が大型化、かつ、複雑化し、コストもかかる。この様な問題を解決するべく本発明者内の一部のものが、新規な高密度のプラズマの発生が可能な誘導結合型(ICP:Inductively Coupled Plasma)プラズマ発生装置を先に提案した(特願2001−76877号、および、特願200172084)。  However, many of the proposed plasma generators have to set a high-pressure vessel or plasma electrode and a material to be processed with plasma in the vessel, further transport the material into the vessel, A material transport mechanism for taking out the material in the inside is also required, and as a result, the plasma generation device itself including the container is increased in size, complexity, and cost. In order to solve such a problem, a part of the inventor previously proposed a novel inductively coupled plasma (ICP) plasma generator capable of generating a high-density plasma (special feature). Application No. 2001-76877 and Japanese Patent Application No. 200012084).

本装置は、誘導加熱された金属からの熱電子供給で放電を補助する、熱電子援用型の誘導結合型マイクロプラズマ発生装置である。熱電子の援用することにより、通常、プラズマのバルク部分に対して、プラズマの損失、消失部分となる壁(表面)の部分の比率が大きくり、プラズマの発生が困難になる、プラズマの微小化、マイクロプラズマの発生、維持を容易とするものである。現在までに、最小で管内径約20μmもの放電空間を微細化したマイクロプラズマの発生に成功、そのプラズマ診断とともに、局所領域へのマスクレス成膜、エッチングなどへ応用を進められている。このプラズマ装置は軽量小型で微小、人の手で楽に操作、低コスト、かつ、プロセシングすべき材料の所に持って行って、材料処理することができるなど操作性の面でもきわめて優れた特性を有する。又、この様なプラズマ発生装置 は、材料プロセス(例えば、材料の加工、材料の溶融、物質合成など)のほかに、環境応用(有害物質分解など)などへの応用も可能である。  This apparatus is a thermoelectron-assisted inductively coupled microplasma generator that assists discharge by supplying thermoelectrons from induction-heated metal. With the help of thermoelectrons, the ratio of the wall (surface) that becomes the loss / disappearance part of the plasma is usually larger than the bulk part of the plasma, making it difficult to generate plasma. This facilitates the generation and maintenance of microplasma. To date, microplasma with a minimum discharge space of about 20 μm inside the tube has been successfully generated, and its plasma diagnosis has been applied to maskless film formation and etching in local regions. This plasma device is light and small, very easy to operate with human hands, low cost, and can be brought to the material to be processed and processed, and it has extremely excellent characteristics in terms of operability. Have. Moreover, such a plasma generator can be applied to environmental applications (such as decomposition of harmful substances) in addition to material processes (for example, material processing, material melting, substance synthesis, etc.).

しかしながら、このように熱電子源の具備により初めて数十μmサイズまでの微細化に成功したものの、その印加電力は金属の誘導加熱にも用いられるため、その発生にはエネルギー損失が無視できない。また、電極の高温によるプラズマガス温度の上昇に起因する、より低温で高密度のプラズマの発生の困難さ、制御の難しさ、なといった課題が残されており、新技術の開発が望まれている。  However, although the thermal electron source is successfully provided for miniaturization to the size of several tens of μm for the first time, the applied power is also used for induction heating of the metal, and thus energy loss cannot be ignored. In addition, problems such as difficulty in generating a lower temperature and higher density plasma due to an increase in the plasma gas temperature due to the high temperature of the electrode remain difficult, and development of new technologies is desired. Yes.

以上のような背景の下、本発明は高密度・高エネルギー効率誘導結合型マイクロプラズマの安定発生・維持が可能で、かつ、プラズマを用いた処理等が行うことが可能なマイクロプラズマ発生装置を提供することを目的とする。  Under the background as described above, the present invention provides a microplasma generator that can stably generate and maintain high-density, high-energy-efficiency inductively coupled microplasma and that can perform processing using plasma. The purpose is to provide.

誘導結合型プラズマの微細化(マイクロプラズマ化)を実現するための補助電子源として、誘電体バリア放電(Dielectric Barrier Discharge;DBD)を補助電子供給源として用いた誘電体バリア放電援用型誘導結合型マイクロプラズマを発生せること、加えて、プラズマトーチをフレキシブルチューブで繋ぐことであらゆる環境下に簡単に持ち込める事が能であることを特徴にしている。  Dielectric Barrier Discharge Assisted Inductive Coupled Type Using Dielectric Barrier Discharge (DBD) as an Auxiliary Electron Supply Source as an Auxiliary Electron Source for Realizing Miniaturization (Microplasmaization) of Inductively Coupled Plasma It is characterized by the ability to generate microplasma and, in addition, easily bring it into any environment by connecting the plasma torch with a flexible tube.

本発明に基づくプラズマ発生装置は、誘電体製筒状の誘電体プラズマトーチ、該トーチ内にプラズマガスを供給するプラズマガス供給手段、高周波電力を供給して誘電体バリヤ放電を発生させるための高周波電源、該トーチ内のプラズマ発生領域またはその近傍に位置するように配設された誘電体バリア放電用の電極材、該トーチ外に配設された誘電体バリア放電用の電極、トーチの周りに巻いた誘導結合型プラズマ発生用コイル、誘導結合型プラズマ発生用高周波電源から主に構成されている。  A plasma generator according to the present invention includes a dielectric cylindrical dielectric plasma torch, plasma gas supply means for supplying a plasma gas into the torch, and a high frequency for generating a dielectric barrier discharge by supplying high frequency power. A power source, a dielectric barrier discharge electrode material disposed so as to be located in or near the plasma generation region in the torch, a dielectric barrier discharge electrode disposed outside the torch, around the torch It is mainly composed of a coil for inductively coupled plasma generation and a high frequency power source for inductively coupled plasma generation.

さらにまた、これらのプラズマ発生装置をプラズマガス源とプラズマトーチをフレキシブルなチューブで繋ぐことも可能とする。該チューブ内に高周波電源と電極を繋ぐケーブルとアースと電極を繋ぐケーブルを通す一方で、トーチ内に高周波電源と電極を繋ぐケーブル、トーチ外にアースと電極を繋ぐケーブルを配置した。  Furthermore, these plasma generators can connect a plasma gas source and a plasma torch with a flexible tube. A cable connecting the high-frequency power source and the electrode and a cable connecting the ground and the electrode are passed through the tube, while a cable connecting the high-frequency power source and the electrode inside the torch, and a cable connecting the ground and the electrode outside the torch.

以上のように、本発明により、液体中、地中、生体内など、様々な環境下において簡単に高密度のマイクロプラズマを、安定的、効率良く、発生・維持が可能となる。その結果、様々な環境下においてマイクロプラズマを用いた各種の材料プロセシングが可能となる。  As described above, according to the present invention, high-density microplasma can be generated and maintained easily and stably in various environments such as in liquid, underground, and living organisms. As a result, various material processing using microplasma is possible under various environments.

以下、図面を参照して本発明の実施の形態を説明する。図1は本発明の低温マイクロプラズマ発生装置の実施の形態の一つの概略例を示したものである。  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows one schematic example of an embodiment of the low-temperature microplasma generator of the present invention.

内径1mmから10μmのサイズの誘電体製筒状のプラズマトーチ(▲1▼)、該トーチ内にプラズマガスを供給するプラズマガス供給部(▲7▼)、電極間に高周波電力を供給し、誘電体バリヤ放電を発生させるための高周波電源(▲8▼)、該トーチ内でのプラズマ発生領域またはその近傍に位置するように配設された誘電体バリア放電用の電極材(▲3▼)、該トーチ外に配設された誘電体バリア放電用の電極材(▲4▼)、該トーチ外に巻いた誘導結合型コイル(▲9▼)、誘導結合型プラズマを発生させるための高周波電源▲10▼)、を備えたプラズマ発生装置であって、プラズマガス源とプラズマトーチをフキシブルなチューブ(▲2▼)で繋いだ装置。該チューブ内に高周波電源と電極を繋ぐケーブル(▲5▼)とアースと電極を繋ぐケーブル(▲6▼)を通す一方で、トーチ内において、周波電源と電極を繋ぐケーブル(▲5▼)、トーチ外にアースと電極を繋ぐケーブル(▲6▼を配置した。  A dielectric cylindrical plasma torch (1) having an inner diameter of 1 to 10 μm, a plasma gas supply unit (7) for supplying plasma gas into the torch, and a high frequency power between the electrodes A high frequency power source (8) for generating body barrier discharge, an electrode material for dielectric barrier discharge (3) disposed so as to be located in or near the plasma generation region in the torch, Dielectric barrier discharge electrode material (4) disposed outside the torch, inductively coupled coil (9) wound outside the torch, and a high frequency power source for generating inductively coupled plasma 10)), wherein the plasma gas source and the plasma torch are connected by a flexible tube (2). The cable connecting the high frequency power source and the electrode (5) and the cable connecting the ground and the electrode (6) are passed through the tube, while the cable (5) connecting the frequency power source and the electrode in the torch. A cable (6) connecting the ground and the electrode was arranged outside the torch.

上記のような装置(図1)に高周波電力を供給することでマイクロプラズマの発生がが可能となる。  Microplasma can be generated by supplying high-frequency power to the above apparatus (FIG. 1).

発生したプラズマの写真の一例を図2に示す。この場合のプラズマ生成条件は、プラズマガスAr(流量:1slm)、DBD発生における周波数、印加電圧は10kHz,2.2kVp−p、ICMP発生における周波数は450MHz、入力電力は、4〜10Wである。入力電力の増大と共に、プラズマは大きくそして発光は明るく変化した。  An example of a photograph of the generated plasma is shown in FIG. The plasma generation conditions in this case are: plasma gas Ar (flow rate: 1 slm), frequency for DBD generation, applied voltage is 10 kHz, 2.2 kVp-p, frequency for ICMP generation is 450 MHz, and input power is 4 to 10 W. With increasing input power, the plasma was larger and the emission was brighter.

このプラズマを用いたプラズマ材料プロセシング(材料合成、堆積、エッチング、表面処理など)の一例として、ポリカーボネートの表面処理を行った。プラズマガスとしては、Heガスを用い、大気環境下、5W、30秒の処理において、水滴の接触角が半分以下に向上した(親水化)。これは応用の一例であり、その他、材料合成、堆積、エッチングなどの材料プロセス一般への応用が可能であることは言を待たない。  As an example of plasma material processing (material synthesis, deposition, etching, surface treatment, etc.) using this plasma, polycarbonate surface treatment was performed. As the plasma gas, He gas was used, and the contact angle of water droplets was improved to half or less (hydrophilization) in a treatment at 5 W for 30 seconds in an atmospheric environment. This is an example of application, and it is needless to say that it can be applied to general material processes such as material synthesis, deposition, and etching.

本発明のマイクロプラズマ発生装置の一概略例を示した図である。It is the figure which showed one schematic example of the microplasma generator of this invention. 本発明のプラズマ発生装置により発生した大気圧下でのマイクロプラズマの電力入力条件による形状変化(実験条件;トーチ内径500μm,電極タングステンワイヤ径100μm,プラズマ生成条件は、プラズマガスAr(流量:1slm)、DBD発生における周波数、印加電圧は10kHz,2.2kVp−p、誘導結合型プラズマ発生における周波数は450MHz、入力電力は、4〜10W。Change in shape of microplasma generated by the plasma generator of the present invention under atmospheric pressure depending on power input conditions (experimental conditions; torch inner diameter 500 μm, electrode tungsten wire diameter 100 μm, plasma generation conditions are plasma gas Ar (flow rate: 1 slm) , DBD generation frequency, applied voltage is 10 kHz, 2.2 kVp-p, inductively coupled plasma generation frequency is 450 MHz, input power is 4-10 W. 本発明のマイクロプラズマ発生装置を用い、ポリカーボネーとの表面処理により、表面の親水化処理をしたものの結果の一例である。右が処理前の表面での水滴の様子、左が処理後の表面での水滴の様子を示している。It is an example of the result of what hydrophilized the surface by surface treatment with polycarbonate using the microplasma generator of the present invention. The right shows the state of water droplets on the surface before treatment, and the left shows the state of water droplets on the surface after treatment.

符号の説明Explanation of symbols

▲1▼・・・プラズマトーチ
▲2▼・・・フレキシブルなチューブ
▲3▼・・・誘電体バリア放電用電極材
▲4▼・・・誘電体バリア放電用電極材
▲5▼・・・高周波電源と電極を繋ぐケーブル
▲6▼・・・アースと電極を繋ぐケーブル
▲7▼・・・プラズマガス供給部
▲8▼・・・誘電体バリア放電用高周波電源
▲9▼・・・誘導結合型プラズマ発生コイル
▲10▼・・・誘導結合型プラズマ用電源
P・・・プラズマ発生部
S・・・接着剤
(1) ... Plasma torch (2) ... Flexible tube (3) ... Electrode material for dielectric barrier discharge (4) ... Electrode material for dielectric barrier discharge (5) ... High frequency Cable connecting power supply and electrode (6) ... Cable connecting ground and electrode (7) ... Plasma gas supply unit (8) ... High frequency power supply for dielectric barrier discharge (9) ... Inductive coupling type Plasma generating coil (10): Inductively coupled plasma power supply P: Plasma generating part S: Adhesive

Claims (4)

誘電体チューブの周りに誘導結合型プラズマ発生コイルを具備し、かつ、チューブ内外に誘電体バリア放電発生用の電極も具備したプロセスプラズマ発生装置。  A process plasma generator comprising an inductively coupled plasma generating coil around a dielectric tube, and an electrode for generating a dielectric barrier discharge inside and outside the tube. 請求項1に記載の石英管などの誘電体からなるチューブの内径が10mmから10μmのサイズの請求項1に記載のプロセスプラズマ発生装置。  The process plasma generator according to claim 1, wherein the tube made of a dielectric material such as the quartz tube according to claim 1 has an inner diameter of 10 mm to 10 µm. 請求項1、2に記載のプロセスプラズマ発生用コイルおよび電極装置を、プラズマ原料ガス導入用のフレキサブルなチューブの先端、および、先端近傍に具備した、プラズマ発生装置。  A plasma generator comprising the process plasma generating coil and electrode device according to claim 1 at the tip of a flexible tube for introducing a plasma source gas and in the vicinity of the tip. 請求項1、2、3に記載のプロセスプラズマ発生装置による、材料合成、堆積、エッチング、表面処理プロセス方法。  A material synthesis, deposition, etching, and surface treatment process method using the process plasma generator according to claim 1, 2 or 3.
JP2007059181A 2007-02-09 2007-02-09 Plasma generator Pending JP2008198583A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106653552A (en) * 2016-12-02 2017-05-10 大连民族大学 Plasma jet flow generation device
CN110248458A (en) * 2019-06-19 2019-09-17 大连理工大学 A kind of more microplasma body electric discharge devices of radio frequency
JP2022011605A (en) * 2020-06-30 2022-01-17 日本特殊陶業株式会社 Plasma irradiation device
JP2023544514A (en) * 2020-09-18 2023-10-24 フリューダイム カナダ インコーポレイテッド Atomic analysis system and method based on inductively coupled plasma

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106653552A (en) * 2016-12-02 2017-05-10 大连民族大学 Plasma jet flow generation device
CN106653552B (en) * 2016-12-02 2018-02-13 大连民族大学 A kind of plasma jet generating means
CN110248458A (en) * 2019-06-19 2019-09-17 大连理工大学 A kind of more microplasma body electric discharge devices of radio frequency
JP2022011605A (en) * 2020-06-30 2022-01-17 日本特殊陶業株式会社 Plasma irradiation device
JP7418144B2 (en) 2020-06-30 2024-01-19 日本特殊陶業株式会社 Plasma irradiation device
JP2023544514A (en) * 2020-09-18 2023-10-24 フリューダイム カナダ インコーポレイテッド Atomic analysis system and method based on inductively coupled plasma
JP7775297B2 (en) 2020-09-18 2025-11-25 フリューダイム カナダ インコーポレイテッド Inductively coupled plasma based atomic analysis system and method

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