JP2000036489A - Reactive ion etching system and method - Google Patents
Reactive ion etching system and methodInfo
- Publication number
- JP2000036489A JP2000036489A JP10216527A JP21652798A JP2000036489A JP 2000036489 A JP2000036489 A JP 2000036489A JP 10216527 A JP10216527 A JP 10216527A JP 21652798 A JP21652798 A JP 21652798A JP 2000036489 A JP2000036489 A JP 2000036489A
- Authority
- JP
- Japan
- Prior art keywords
- upper electrode
- substrate
- electrode
- vacuum chamber
- frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001020 plasma etching Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 238000005530 etching Methods 0.000 claims abstract description 43
- 230000007935 neutral effect Effects 0.000 claims abstract description 25
- 230000002093 peripheral effect Effects 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 19
- 230000005684 electric field Effects 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 239000003575 carbonaceous material Substances 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 5
- 150000002366 halogen compounds Chemical class 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 239000002210 silicon-based material Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 238000000992 sputter etching Methods 0.000 claims 1
- 230000001681 protective effect Effects 0.000 abstract description 11
- 230000006698 induction Effects 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 19
- 239000000126 substance Substances 0.000 description 8
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Plasma Technology (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマを利用し
て、半導体上或いは電子部品、その他の基板上の物質を
エッチングする方法及び装置に関するものである。[0001] 1. Field of the Invention [0002] The present invention relates to a method and an apparatus for etching a substance on a semiconductor, an electronic component, or another substrate using plasma.
【０００２】[0002]
【従来の技術】従来この種のエッチング技術としては種
々のものが知られており、その一つとして添付図面の図
４に磁気中性線放電エッチング装置を示す。真空室Ａは
その側壁部を金属円筒体で構成され、その外側に磁気中
性線形成用の三つのコイルＢから成る磁場発生手段が設
けられ、真空室Ａの下部には基板電極Ｃを、また上部に
は基板電極Ｃと対向させて上部電極Ｄを設け、上部電極
Ｄの周辺部は誘電体Ｅで構成され、この誘電体Ｅ内に高
周波コイルＦが埋め込まれ、真空室Ａ内に放電アンテナ
を形成している。基板電極Ｃ、上部電極Ｄ及び高周波コ
イルＦはそれぞれバイアス用高周波電源Ｇ、高周波電源
Ｈ及びプラズマ発生用高周波電源Ｉに接続されている。
なお、図４においてＪは真空室Ａの側壁部の内側に沿っ
て設けられた防着板、Ｋは反応ガス導入部、Ｌは真空室
Ａの排気口である。磁場発生手段すなわち真空室Ａの側
壁部の外側に配置された三つのコイルＢにより真空室Ａ
内に連続して存在する磁場ゼロの位置である環状磁気中
性線が形成される。この磁気中性線に沿って、上部電極
Ｄの周辺部の誘電体Ｅ内に埋設された放電アンテナＥに
プラズマ発生用高周波電源Ｉから高周波電場を印加する
ことにより、リング状のプラズマが形成される。エッチ
ングガスは図示してない流量制御器を通して上部天板付
近の周囲より導入され、コンダクタンスバルブの開口率
によって圧力が制御される。下部の基板電極Ｃにはバイ
アス用高周波電源Ｇからバイアス用の高周波電力が印加
される。2. Description of the Related Art Conventionally, various types of etching techniques of this kind are known, and as one of them, a magnetic neutral beam discharge etching apparatus is shown in FIG. 4 of the accompanying drawings. The side wall of the vacuum chamber A is formed of a metal cylinder, and a magnetic field generating means including three coils B for forming a magnetic neutral line is provided outside the side wall. A substrate electrode C is provided below the vacuum chamber A. An upper electrode D is provided on the upper portion so as to face the substrate electrode C. A peripheral portion of the upper electrode D is formed of a dielectric E. A high frequency coil F is embedded in the dielectric E, and a discharge is generated in the vacuum chamber A. Forming an antenna. The substrate electrode C, the upper electrode D, and the high-frequency coil F are connected to a high-frequency power source G, a high-frequency power source H, and a high-frequency power source I for plasma generation, respectively.
In FIG. 4, J is an anti-adhesion plate provided along the inside of the side wall of the vacuum chamber A, K is a reaction gas introduction part, and L is an exhaust port of the vacuum chamber A. The magnetic field generating means, ie, three coils B arranged outside the side wall of the vacuum chamber A,
An annular magnetic neutral line is formed, which is a position where the magnetic field is continuously present in the magnetic field. A ring-shaped plasma is formed by applying a high-frequency electric field from a high-frequency power source I for plasma generation to a discharge antenna E embedded in a dielectric E around the upper electrode D along the magnetic neutral line. You. The etching gas is introduced from around the upper top plate through a flow controller (not shown), and the pressure is controlled by the opening ratio of the conductance valve. A high frequency power for bias is applied to the lower substrate electrode C from a high frequency power supply for bias G.
【０００３】図４に示す磁気中性線放電エッチング装置
の動作について説明する。図示してない流量制御器を通
して上部天板付近の周囲より真空室Ａ内にエッチングガ
スが導入され、誘電体Ｅ内に埋設された放電アンテナＦ
に高周波電力が印加され、プラズマが形成されて導入ガ
スが分解される。磁気中性線放電では真空中にリング上
に形成される磁気中性線の部分に密度の高いプラズマを
形成するため、リングに沿って形成される誘導電場を有
効利用するものでる。この方法によって、容易に1011cm
-3の荷電粒子密度を持つプラズマが形成される。下部の
基板電極Ｃにはバイアス用高周波電源Ｇからバイアス用
の高周波電力が印加される。ブロッキングコンデンサー
によって浮遊状態になっている基板電極Ｃは負のセルフ
バイアス電位となり、プラズマ中の正イオンが引き込ま
れて基板上の物質をエッチングする。この場合、エッチ
ングは、高周波アンテナＦ、上部電極Ｄ及び基板電極Ｃ
それぞれにほぼ同時に電力を印加して行われる。The operation of the magnetic neutral beam discharge etching apparatus shown in FIG. 4 will be described. An etching gas is introduced into the vacuum chamber A from around the upper top plate through a flow controller (not shown), and the discharge antenna F embedded in the dielectric E is formed.
Is applied with high-frequency power, plasma is formed, and the introduced gas is decomposed. In the magnetic neutral wire discharge, a high-density plasma is formed in a portion of the magnetic neutral wire formed on the ring in a vacuum, so that an induction electric field formed along the ring is effectively used. By this method, easily 10 11 cm
A plasma with a charged particle density of -3 is formed. A high frequency power for bias is applied to the lower substrate electrode C from a high frequency power supply for bias G. The substrate electrode C, which is in a floating state due to the blocking capacitor, has a negative self-bias potential, and positive ions in the plasma are attracted to etch the substance on the substrate. In this case, the etching is performed by the high-frequency antenna F, the upper electrode D, and the substrate electrode C.
It is performed by applying power almost simultaneously to each of them.
【０００４】図５は、従来から用いられている誘導結合
エッチング装置の一例を概略的に示している。真空室Ａ
はその側壁部を金属円筒体で構成されている。真空室Ａ
の下部には基板電極Ｃを、また上部には基板電極Ｃと対
向させて上部電極Ｄを設け、上部電極Ｄの周辺部は誘電
体Ｅで構成され、この誘電体Ｅ内に高周波コイルＦが埋
め込まれ、真空室Ａ内に放電アンテナを形成している。
基板電極Ｃ、上部電極Ｄ及び高周波コイルＦはそれぞれ
バイアス用高周波電源Ｇ、高周波電源Ｈ及びプラズマ発
生用高周波電源Ｉに接続されている。なお、図５におい
てＪは真空室Ａの側壁部の内側に沿って設けられた防着
板、Ｋは反応ガス導入部、Ｌは真空室Ａの排気口であ
る。この場合も、エッチングは同様に、高周波アンテナ
Ｆ、上部電極Ｄ及び基板電極Ｃそれぞれにほぼ同時に電
力を印加して行われる。FIG. 5 schematically shows an example of a conventionally used inductively coupled etching apparatus. Vacuum chamber A
Has a side wall formed of a metal cylinder. Vacuum chamber A
Is provided with a substrate electrode C at a lower portion, and an upper electrode D is provided at an upper portion so as to face the substrate electrode C. A peripheral portion of the upper electrode D is formed of a dielectric E, and a high-frequency coil F is provided in the dielectric E. It is embedded and forms a discharge antenna in the vacuum chamber A.
The substrate electrode C, the upper electrode D, and the high-frequency coil F are connected to a high-frequency power source G, a high-frequency power source H, and a high-frequency power source I for plasma generation, respectively. In FIG. 5, J is a deposition-prevention plate provided along the inside of the side wall of the vacuum chamber A, K is a reaction gas introduction part, and L is an exhaust port of the vacuum chamber A. Also in this case, the etching is similarly performed by applying power to the high-frequency antenna F, the upper electrode D, and the substrate electrode C substantially simultaneously.
【０００５】[0005]
【発明が解決しようとする課題】図４及び図５に示すよ
うな従来技術では、高周波アンテナ、上部電極、下部基
板電極それぞれにほぼ同時に電力を印加してエッチング
が行われていた。その結果、特に図４に示すような磁気
中性線放電プラズマ方式を利用した例では均一性が良
く、高いエッチング速度で酸化膜の微細加工ができるよ
うになった。しかしながら、レジストに対する選択比は
３前後と低く、より以上の選択比を得ようとすると微細
な孔が埋まってしまいエッチングできない等の問題があ
った。In the prior art shown in FIGS. 4 and 5, etching is performed by applying power almost simultaneously to each of the high-frequency antenna, the upper electrode, and the lower substrate electrode. As a result, especially in the example using the magnetic neutral discharge plasma method as shown in FIG. 4, the uniformity is good and the fine processing of the oxide film can be performed at a high etching rate. However, the selectivity with respect to the resist is as low as about 3, and if a higher selectivity is to be obtained, there is a problem that fine holes are buried and etching cannot be performed.
【０００６】エッチングにおいては、反応性の高いラジ
カル及びイオンを基板に照射して基板物質との反応によ
り基板物質をガス化して蝕刻するが、単に削ればよいわ
けではなく、微細化に伴いより形状制御が重要になって
きている。このためにはエッチャントの他に微細孔内部
の壁面に付着してイオンの当たらない側壁を保護する働
きをする物質もプラズマ中で生成されなければならな
い。0.3μｍ幅以下の微細加工ではこのエッチャントと
保護物質との相対濃度及び孔内部への相対的な到達量が
重要になる。保護物質がエッチャントに対して多くなり
過ぎると、0.3μｍ幅以下の微細孔は、保護物質により
埋まってしまい、いわゆるエッチストップが起こって、
削れないことになる。逆に、保護物質が少なすぎると、
エッチャントによって側壁が削られて、Bowingが発生し
たりテーパー形状となって、望ましい形状が得られな
い。また、微細な構造をレジストに転写するのに光リソ
グラフィーが行われるが、解像度を上げるため焦点深度
が浅くなり、0.1μｍ幅付近の微細加工ではレジストの
厚みを0.5μｍにしなければならない。このようにレジ
ストが薄くなるため、酸化膜エッチングの場合、レジス
トに対する選択比として５以上が必要になる。しかしな
がら、従来の方法において微細加工できる条件では、上
下電極に印加する高周波電力及びアンテナに印加する高
周波電力の相対値を変えても、あるいは導入するガスの
組成比を変えても、レジストに対する選択比を４以上に
することができなかった。[0006] In etching, a substrate material is gasified by a reaction with the substrate material by irradiating the substrate with radicals and ions having high reactivity, and the substrate material is etched. Control is becoming important. For this purpose, in addition to the etchant, a substance that adheres to the inner wall surface of the micropore and protects the side wall not exposed to ions must be generated in the plasma. In fine processing with a width of 0.3 μm or less, the relative concentration of the etchant and the protective substance and the relative amount reaching the inside of the hole are important. If the amount of the protective substance becomes too large with respect to the etchant, the fine pores having a width of 0.3 μm or less are filled with the protective substance, and a so-called etch stop occurs.
It will not be sharpened. Conversely, if there are too few protective substances,
Side walls are cut off by the etchant, so that bowing occurs or a tapered shape is obtained, and a desired shape cannot be obtained. In addition, photolithography is performed to transfer a fine structure to a resist. However, the depth of focus is reduced in order to increase the resolution, and the resist thickness must be reduced to 0.5 μm in fine processing in the vicinity of 0.1 μm width. As described above, since the resist becomes thin, in the case of oxide film etching, a selectivity to the resist of 5 or more is required. However, under the conditions that can be finely processed by the conventional method, even if the relative value of the high-frequency power applied to the upper and lower electrodes and the high-frequency power applied to the antenna is changed, or the composition ratio of the gas to be introduced is changed, Could not be more than 4.
【０００７】そこで、本発明は、このような従来技術に
伴う問題点を解決して、レジストに対して高い選択比で
エッチングを行うことのできる反応性イオンエッチング
方法及び装置を提供することを目的としている。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a reactive ion etching method and apparatus capable of solving the problems associated with the prior art and performing etching with a high selectivity to a resist. And
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
に、本発明によれば、磁気中性線放電型または誘導結合
型エッチングにおいて、最初に高周波アンテナ及び上部
電極に電力を印加し、時間をおいて基板電極に電力を印
加するように構成される。According to the present invention, in order to achieve the above object, in magnetic neutral discharge type or inductively coupled type etching, power is first applied to the high frequency antenna and the upper electrode, and In this configuration, power is applied to the substrate electrode.
【０００９】例えば、上部電極面にＰＴＦＥ(ポリテト
ラフルオロエチレン)を載置し、ガスとしてＣＦ4を用い
たとき、ＣＦ3ラジカルやＣ2Ｆ4が多量に生成される。
導入ガスがプラズマ分解されると、ＣＦ3、ＣＦ2、Ｃ
Ｆ、Ｆになる。また、それらのイオンも生成され、負の
自己バイアスになっている基板電極表面に衝突し、電極
表面材のＰＴＦＥをスパッタする。ＰＴＦＥの分子構造
上の終端部は−ＣＦ3であり、鎖状の部分は−ＣＦ2−Ｃ
Ｆ2−で構成されている。従つて、スパッタされたＰＴ
ＦＥからＣＦ3やＣ2Ｆ4が生成されやすい。その結果、
ＣＦ3やＣ2Ｆ4が多量に検出されることになる。For example, when PTFE (polytetrafluoroethylene) is placed on the upper electrode surface and CF 4 is used as a gas, a large amount of CF 3 radicals and C 2 F 4 are generated.
When the introduced gas is plasma-decomposed, CF 3 , CF 2 , C
F, F. In addition, those ions are also generated and collide with the negatively self-biased substrate electrode surface to sputter the electrode surface material PTFE. End of the molecular structure of PTFE is -CF 3, chain moiety -CF 2 -C
F 2- . Therefore, the sputtered PT
CF 3 and C 2 F 4 are easily generated from FE. as a result,
CF 3 and C 2 F 4 is to be a large amount detected.
【００１０】上部電極面にグラファイトを用いたときに
は、ＣＦラジカルが多量に検出される。多分、ＣＦ4の
プラズマ分解によって生成されたＦ原子がグラファイト
と結合して最表面で−ＣＦ結合を作り、それがスパッタ
されるためと思われる。上部電極面にポリシリコンを用
いたときには、ＳｉＦ、ＳｉＦ2ラジカルが多量に検出
され、Ｆ原子（ラジカル）の減少が見られた。多分、Ｃ
Ｆ4のプラズマ分解によって生成されたＦ原子がポリシ
リコンと結合して最表面で−ＳｉＦｘ結合を作り、それ
がスパッタされるためと思われる。When graphite is used for the upper electrode surface, a large amount of CF radicals are detected. This is probably because F atoms generated by plasma decomposition of CF 4 combine with graphite to form —CF bonds on the outermost surface, which are sputtered. When polysilicon was used for the upper electrode surface, a large amount of SiF and SiF 2 radicals were detected, and a decrease in F atoms (radicals) was observed. Maybe C
F atoms produced by the plasma decomposition of F 4 is bonded to polysilicon make -SiFx bond the outermost surface, it seems to be sputtered.
【００１１】このように、分解したガスが電極材と反応
し、スパッタによってエッチングに有用な物質や重合の
前駆物質として気相中に析出させることができ、また、
レジストとの選択比を減少させるＦ原子の量を少なくす
る作用もある。基板電極に高周波電力を印加しないと、
上部電極上で発生した重合前駆物質が基板上に堆積す
る。基板全体に堆積するのでパターニングされた微細孔
或いは溝部内部にも堆積膜が形成される。バイアス電力
を印加して基板をエッチングする場合、この皮膜が厚す
ぎると微細孔或いは溝部がエッチングされなくなる。薄
すぎるとレジストに対する選択比は向上しない。従っ
て、このレジスト保護膜形成時間はエッチング条件によ
って適宜選択されなければならない。As described above, the decomposed gas reacts with the electrode material, and can be deposited in the gas phase by sputtering as a substance useful for etching or a precursor for polymerization.
It also has the effect of reducing the amount of F atoms that reduces the selectivity with resist. If high frequency power is not applied to the substrate electrode,
The polymerization precursor generated on the upper electrode is deposited on the substrate. Since the film is deposited on the entire substrate, a deposited film is also formed inside the patterned fine holes or grooves. When a substrate is etched by applying a bias power, if this film is too thick, the fine holes or grooves will not be etched. If it is too thin, the selectivity to resist will not improve. Therefore, the time for forming the resist protective film must be appropriately selected according to the etching conditions.
【００１２】[0012]
【発明の実施の形態】本発明の一つの実施の形態によれ
ば、真空室の上部に上部電極を設け、上部電極を高周波
電源に接続し、上部電極の周辺部を誘電体で構成すると
共に誘電体内に高周波コイルを埋め込んで真空室内に放
電アンテナを形成してなるプラズマ発生装置を有し、真
空室の側壁部を金属円筒体で構成し、真空室の下部には
上部電極と対向させて基板電極を設け、基板電極を高周
波電源に接続し、ハロゲン系のガスを主体とする気体を
真空中に導入し、低圧でプラズマを形成するとともに導
入気体を分解し、発生した原子、分子、ラジカル、イオ
ンを積極的に利用し、プラズマに接する基板電極に交番
電場或いは高周波電場を印加して基板電極上に載置され
た基板をエッチングする反応性イオンエッチング装置に
おいて、上部電極、高周波コイル及び基板電極に接続さ
れたそれぞれの電源を時間的に制御してレジストに対し
て高選択比でエッチングができるようにする電力制御手
段が設けられる。According to one embodiment of the present invention, an upper electrode is provided above a vacuum chamber, the upper electrode is connected to a high-frequency power source, and a peripheral portion of the upper electrode is formed of a dielectric. It has a plasma generator in which a high-frequency coil is embedded in a dielectric and a discharge antenna is formed in a vacuum chamber. The side wall of the vacuum chamber is made of a metal cylinder, and the lower part of the vacuum chamber faces the upper electrode. Providing a substrate electrode, connecting the substrate electrode to a high-frequency power supply, introducing a gas mainly composed of a halogen-based gas into a vacuum, forming plasma at a low pressure and decomposing the introduced gas, generating atoms, molecules, and radicals In a reactive ion etching apparatus that positively utilizes ions and applies an alternating electric field or a high-frequency electric field to a substrate electrode in contact with plasma to etch a substrate mounted on the substrate electrode, Each power supply connected to the high frequency coil and the substrate electrode to temporally control the power control unit to allow the etching with high selectivity is provided for resist.
【００１３】本発明の別の実施の形態によれば、上記の
反応性イオンエッチング装置を用いた方法において、ガ
ス導入後に上部電極と高周波アンテナに電力を供給して
上部電極をスパッタエッチングして基板電極上に載置さ
れた基板上に薄い皮膜を形成し、その後、基板電極に電
力を供給するように構成される。According to another embodiment of the present invention, in the method using the above-described reactive ion etching apparatus, power is supplied to the upper electrode and the high-frequency antenna after gas introduction, and the upper electrode is sputter-etched. It is configured to form a thin film on a substrate mounted on the electrode and then supply power to the substrate electrode.
【００１４】本発明のさらに別の実施の形態によれば、
真空室内に連続して存在する磁場ゼロの位置である環状
磁気中性線を形成する磁場発生手段を設けると共に、こ
の磁気中性線に沿って交番電場を加えてこの磁気中性線
に放電プラズマを発生させる１重を含む多重の高周波コ
イルを設けて成るプラズマ発生装置を有し、真空室の側
壁部を金属円筒体で構成し、真空室の下部に基板電極
を、真空室の上部には基板電極と対向させて上部電極を
設け、基板電極及び上部電極をそれぞれ高周波電源に接
続し、上部電極の周辺部を誘電体で構成すると共に誘電
体内に上記高周波コイルを埋め込んで真空室内に放電ア
ンテナを形成し、ハロゲン系のガスを主体とする気体を
真空中に導入し、低圧でプラズマを形成すると共に導入
気体を分解し、発生した原子、分子、ラジカル、イオン
を積極的に利用し、プラズマに接する基板電極に交番電
場或いは高周波電場を印加して電極上に載置された基板
をエッチングする反応性イオンエッチング装置におい
て、上部電極、高周波コイル及び基板電極に接続された
それぞれの電源を時間的に制御してレジストに対して高
選択比でエッチングができるようにする電力制御手段が
設けられる。According to yet another embodiment of the present invention,
A magnetic field generating means for forming an annular magnetic neutral line which is a position of zero magnetic field continuously existing in the vacuum chamber is provided, and an alternating electric field is applied along the magnetic neutral line to discharge plasma to the magnetic neutral line. Has a plasma generating apparatus provided with multiple high-frequency coils including a single layer that generates a single-layer, a side wall portion of a vacuum chamber is formed of a metal cylindrical body, a substrate electrode is provided at a lower portion of the vacuum chamber, and a An upper electrode is provided facing the substrate electrode, the substrate electrode and the upper electrode are respectively connected to a high-frequency power supply, and a peripheral portion of the upper electrode is formed of a dielectric, and the high-frequency coil is embedded in the dielectric to discharge the antenna into a vacuum chamber. Is formed, a gas mainly composed of a halogen-based gas is introduced into a vacuum, plasma is formed at a low pressure and the introduced gas is decomposed, and the generated atoms, molecules, radicals, and ions are actively used. In a reactive ion etching apparatus that applies an alternating electric field or a high-frequency electric field to a substrate electrode in contact with the plasma to etch a substrate mounted on the electrode, the respective power supplies connected to the upper electrode, the high-frequency coil, and the substrate electrode are timed. There is provided a power control means for controlling the resist to perform etching with a high selectivity to the resist.
【００１５】本発明のさらに別の実施の形態によれば、
磁気中性線放電プラズマを利用した反応性イオンエッチ
ング方法において、ガス導入後に上部電極と高周波アン
テナに電力を供給して上部電極をスパッタエッチングし
て基板電極上に載置された基板上に薄い皮膜を形成し、
その後基板電極に電力を供給するように構成される。According to yet another embodiment of the present invention,
In the reactive ion etching method using magnetic neutral beam discharge plasma, after the gas is introduced, power is supplied to the upper electrode and the high-frequency antenna, and the upper electrode is sputter-etched to form a thin film on the substrate placed on the substrate electrode. To form
Then, it is configured to supply power to the substrate electrode.
【００１６】上記の各実施の形態において、上部電極の
内壁材料としては高分子化合物、硅素材或いは炭素材も
しくはそれらの化合物か複合物を用いることができる。
また皮膜形成のためのガスとしてはＡｒ、Ｈ2、ＣＯ、
ハロゲン化合物を用いることができる。In each of the above embodiments, the inner wall material of the upper electrode may be a polymer compound, a silicon material, a carbon material, or a compound or composite thereof.
Gases for forming a film include Ar, H 2 , CO,
Halogen compounds can be used.
【００１７】[0017]
【実施例】図１には本発明の一実施例による三周波型磁
気中性線放電エッチング装置を示す。図１において、１
は真空室であり、その側壁部２は金属円筒体で構成され
ている。真空室１内の底部には基板電極３が絶縁密封部
材４を介して取付けられ、この基板電極３は、バイアス
用高周波電源５に接続されている。真空室１内の頂部の
天板６には高周波印加浮遊上部電極７が取付けられ、こ
の上部電極７は高周波電源８に接続されている。上部電
極７の周辺部は環状の誘電体９で構成され、この誘電体
９内には環状の高周波コイル10が埋め込まれ、上部電極
７とほぼ同じ高さで真空室１内に放電アンテナを形成し
ている。環状の高周波コイル10はプラズマ発生用高周波
電源11に接続されている。基板電極３のバイアス用高周
波電源５、上部電極７の高周波電源８及び高周波コイル
10の高周波電源11はシーケンシャル制御装置12に接続さ
れ、この制御装置12はそれぞれの電源からの高周波電力
を印加する時間を制御するように構成されている。この
制御の一例を図２に示す。図２からわかるように真空室
１内へガス導入した後、まず上部電極７と高周波アンテ
ナ10に電力が供給され、これにより上部電極７はスパッ
タエッチングされ基板電極３上に載置された基板上に薄
い皮膜すなわちレジスト保護膜が形成される。その後、
基板電極３に電力を供給し、基板をエッチングするよう
に電力印加を時間的に制御するようにしている。また、
真空室１の側壁部の内側に沿って防着板13が設けられ、
真空室１の側壁部には反応ガス導入部14及び排気口15が
設けられ、排気口15は図示してない真空排気系に接続さ
れる。さらに、真空室１の側壁部の外側には、真空室１
内に連続して存在する磁場ゼロの位置である環状磁気中
性線を形成するための磁場発生手段を成す三つのコイル
16、17、18が配置されている。FIG. 1 shows a three-frequency magnetic neutral beam discharge etching apparatus according to an embodiment of the present invention. In FIG. 1, 1
Is a vacuum chamber, and its side wall 2 is formed of a metal cylinder. A substrate electrode 3 is attached to the bottom of the vacuum chamber 1 via an insulating sealing member 4, and the substrate electrode 3 is connected to a high frequency power source 5 for bias. A high frequency application floating upper electrode 7 is attached to a top plate 6 at the top in the vacuum chamber 1, and the upper electrode 7 is connected to a high frequency power supply 8. A peripheral portion of the upper electrode 7 is composed of an annular dielectric 9, and an annular high-frequency coil 10 is embedded in the dielectric 9 to form a discharge antenna in the vacuum chamber 1 at almost the same height as the upper electrode 7. are doing. The annular high-frequency coil 10 is connected to a high-frequency power source 11 for plasma generation. High frequency power supply 5 for biasing substrate electrode 3, high frequency power supply 8 for upper electrode 7, and high frequency coil
The ten high-frequency power supplies 11 are connected to a sequential control device 12, and the control devices 12 are configured to control the time for applying the high-frequency power from each power supply. FIG. 2 shows an example of this control. As can be seen from FIG. 2, after the gas is introduced into the vacuum chamber 1, first, power is supplied to the upper electrode 7 and the high-frequency antenna 10, whereby the upper electrode 7 is sputter-etched on the substrate placed on the substrate electrode 3. Then, a thin film, that is, a resist protective film is formed. afterwards,
Electric power is supplied to the substrate electrode 3 and the application of electric power is temporally controlled so as to etch the substrate. Also,
A deposition prevention plate 13 is provided along the inside of the side wall of the vacuum chamber 1,
A reaction gas inlet 14 and an exhaust port 15 are provided on the side wall of the vacuum chamber 1, and the exhaust port 15 is connected to a vacuum exhaust system (not shown). Further, outside the side wall portion of the vacuum chamber 1, the vacuum chamber 1
Coils forming a magnetic field generating means for forming an annular magnetic neutral line at a position of zero magnetic field continuously present in the magnetic field
16, 17, and 18 are arranged.
【００１８】このように構成した図１に示す装置の動作
について説明する。図１の装置において、プラズマ発生
用高周波電源11（13.56ＭＨｚ）の電力を2.Oｋｗ、基板
バイアス高周波電源５（２ＭＨｚ）の電力を1.OｋＷ、
上部電極７に印加する高周波電源８（27.12ＭＨｚ）の
電力を200Ｗ、上部電極材としてグラファイトを用いＡ
ｒ90sccm（90％）、Ｃ4Ｆ810sccm（10％)を導入し、３m
Torrの圧力下でエッチングした。エッチングの前のレジ
スト保護膜形成時間を、図２で示すように、15秒とした
ところ、レジストとの選択比がほぼ５でエッチストップ
なしにシリコン酸化膜にO.3μｍ径で深さ２μｍのほぼ
垂直形状のエッチングが可能であった。この時のアンテ
ナ10の電力は１ｋＷである。エッチングの前のレジスト
保護膜形成を行わない従来のエッチング条件下では、エ
ッチストップなしにシリコン酸化膜にO.3μｍ径で深さ
２μｍのほぼ垂直形状のエッチングが可能であるもの
の、レジストに対する選択比は２〜３程度であった。The operation of the thus configured apparatus shown in FIG. 1 will be described. In the apparatus of FIG. 1, the power of the plasma generating high-frequency power supply 11 (13.56 MHz) is set to 2.Okw, the power of the substrate bias high-frequency power supply 5 (2 MHz) is set to 1.OkW,
The power of the high frequency power supply 8 (27.12 MHz) applied to the upper electrode 7 is 200 W, and graphite is used as the upper electrode material.
r90sccm (90%), introducing the C 4 F 8 10sccm (10% ), 3m
Etching was performed under Torr pressure. As shown in FIG. 2, the formation time of the resist protective film before etching was set to 15 seconds, the selectivity with the resist was almost 5, and the silicon oxide film had a diameter of 0.3 μm and a depth of 2 μm without etch stop. Substantially vertical etching was possible. The power of the antenna 10 at this time is 1 kW. Under conventional etching conditions in which a resist protective film is not formed before etching, the silicon oxide film can be etched in a nearly vertical shape with a diameter of 0.3 μm and a depth of 2 μm without an etch stop, but the selectivity to resist is high. Was about 2 to 3.
【００１９】上記の例では、上部電極７に印加する高周
波電力として200Ｗを用いたが、この電力はプラズマ発
生用高周波電力及び基板バイアス高周波電力の値によっ
て適宜選択されなければならない。また、27.12ＭＨｚ
の周波数が用いられているが、基板電極３の周波数より
も高い周波数である必要は必ずしもなく800ｋＨｚでも
同様な効果は期待できる。厚いレジスト保護膜が必要な
場合、むしろ低周波電力を印加した方が大きな負の自己
バイアスが発生するので望ましい。In the above example, 200 W was used as the high frequency power applied to the upper electrode 7, but this power must be appropriately selected according to the values of the high frequency power for plasma generation and the high frequency power for the substrate bias. Also, 27.12MHz
The frequency is not necessarily higher than the frequency of the substrate electrode 3, and the same effect can be expected at 800 kHz. When a thick resist protective film is required, it is preferable to apply low-frequency power because a large negative self-bias is generated.
【００２０】図３には本発明を三周波型誘導結合エッチ
ング装置として実施している別の実施例を示し、図１に
示す装置と対応する部分は同じ符号で示す。すなわち、
図３において、真空室１の側壁部２は金属円筒体で構成
され、そして真空室１の底部には基板電極３が絶縁密封
部材４を介して取付けられ、この基板電極３は、バイア
ス用高周波電源５に接続されている。真空室１内の頂部
の天板６には高周波印加浮遊上部電極７が取付けられ、
この上部電極７は高周波電源８に接続されている。上部
電極７の周辺部は環状の誘電体９で構成され、この誘電
体９内には環状の高周波コイル10が埋め込まれ、上部電
極７とほぼ同じ高さで真空室１内に放電アンテナを形成
している。環状の高周波コイル10はプラズマ発生用高周
波電源11に接続されている。基板電極３のバイアス用高
周波電源５、上部電極７の高周波電源８及び高周波コイ
ル10の高周波電源11はシーケンシャル制御装置12に接続
され、この制御装置12はそれぞれの電源からの高周波電
力を印加する時間を制御するように構成され、その制御
の仕方は図２に関して上で述べたものと同じである。ま
た、真空室１の側壁部の内側に沿って防着板13が設けら
れ、真空室１の側壁部には反応ガス導入部14及び排気口
15が設けられ、排気口15は図示してない真空排気系に接
続される。図３の装置を用いてＩＣＰエッチングプロセ
スに適用した場合にも図１の酸化膜用としてのＮＬＤエ
ッチング装置に適用した場合と同様な効果が期待できる
ことは言うまでもない。FIG. 3 shows another embodiment in which the present invention is embodied as a three-frequency type inductively coupled etching apparatus, and portions corresponding to those shown in FIG. 1 are denoted by the same reference numerals. That is,
In FIG. 3, a side wall 2 of a vacuum chamber 1 is formed of a metal cylinder, and a substrate electrode 3 is attached to the bottom of the vacuum chamber 1 via an insulating sealing member 4. Connected to power supply 5. A high frequency application floating upper electrode 7 is attached to a top plate 6 at the top in the vacuum chamber 1.
This upper electrode 7 is connected to a high frequency power supply 8. A peripheral portion of the upper electrode 7 is composed of an annular dielectric 9, and an annular high-frequency coil 10 is embedded in the dielectric 9 to form a discharge antenna in the vacuum chamber 1 at almost the same height as the upper electrode 7. are doing. The annular high-frequency coil 10 is connected to a high-frequency power source 11 for plasma generation. The high-frequency power source 5 for biasing the substrate electrode 3, the high-frequency power source 8 for the upper electrode 7, and the high-frequency power source 11 for the high-frequency coil 10 are connected to a sequential control device 12, which controls the time for applying the high-frequency power from each power source. Is controlled in the same manner as described above with reference to FIG. In addition, a deposition-preventing plate 13 is provided along the inside of the side wall of the vacuum chamber 1, and a reaction gas introduction unit 14 and an exhaust port are provided on the side wall of the vacuum chamber 1.
An exhaust port 15 is provided, and the exhaust port 15 is connected to a vacuum exhaust system (not shown). It is needless to say that the same effect can be expected when applied to the ICP etching process using the apparatus in FIG. 3 as in the case where the apparatus is applied to the NLD etching apparatus for an oxide film in FIG.
【発明の効果】以上説明してきたように、本発明によれ
ば、磁気中性線放電型または誘導結合型エッチングにお
いて、最初に高周波アンテナ及び上部電極に電力を印加
し、時間をおいて基板電極に電力を印加するように構成
しているので、レジストの保護膜を形成してからエッチ
ングが行われ、レジストに対する高い選択比を得ること
ができるようになる。その結果、O.2μｍ幅以下の微細
加工において、サブミクロンホールのパターンエッチン
グを効率よくできるようになる。従って、本発明は半導
体や電子部品加工に用いられている反応性イオンエッチ
ングプロセスに大きく貢献することができる。As described above, according to the present invention, in magnetic neutral discharge or inductively coupled etching, power is first applied to the high-frequency antenna and the upper electrode, and after a while, the substrate electrode is applied. Since power is applied to the resist, etching is performed after forming a protective film of the resist, and a high selectivity to the resist can be obtained. As a result, submicron hole pattern etching can be efficiently performed in fine processing with a width of 0.2 μm or less. Therefore, the present invention can greatly contribute to a reactive ion etching process used for processing semiconductors and electronic components.
【図１】 本発明の一実施例による三周波型磁気中性線
放電エッチング装置を示す概略断面図。FIG. 1 is a schematic sectional view showing a three-frequency magnetic neutral beam discharge etching apparatus according to an embodiment of the present invention.
【図２】 本発明における電力印加の制御を示すグラ
フ。FIG. 2 is a graph showing control of power application in the present invention.
【図３】 本発明の別の実施例による三周波型誘導結合
エッチング装置を示す概略断面図。FIG. 3 is a schematic sectional view showing a three-frequency inductively coupled etching apparatus according to another embodiment of the present invention.
【図４】 従来技術による磁気中性線放電エッチング装
置を示す概略断面図。FIG. 4 is a schematic cross-sectional view showing a magnetic neutral beam discharge etching apparatus according to the related art.
【図５】 従来技術による誘導結合エッチング装置を示
す概略断面図。FIG. 5 is a schematic sectional view showing an inductively coupled etching apparatus according to the related art.
【符号の説明】 １：真空室 ２：側壁部 ３：基板電極 ４：絶縁密封部材 ５：バイアス用高周波電源 ６：天板 ７：高周波印加浮遊上部電極 ８：高周波電源 ９：誘電体 10：高周波コイル 11：プラズマ発生用高周波電源 12：シーケンシャル制御装置 13：防着板 14：反応ガス導入部 15：排気口 16：コイル 17：コイル 18：コイル[Description of Signs] 1: vacuum chamber 2: side wall 3: substrate electrode 4: insulating sealing member 5: high frequency power supply for bias 6: top plate 7: high frequency applied floating upper electrode 8: high frequency power supply 9: dielectric material 10: high frequency Coil 11: High frequency power supply for plasma generation 12: Sequential controller 13: Deposition plate 14: Reactant gas introduction unit 15: Exhaust port 16: Coil 17: Coil 18: Coil
───────────────────────────────────────────────────── フロントページの続き (72)発明者 林 俊雄 神奈川県茅ケ崎市萩園2500番地 日本真空 技術株式会社内 Ｆターム(参考） 4K057 DA13 DB06 DB15 DB20 DD03 DE06 DE08 DE14 DE20 DM09 DN01 5F004 AA02 AA04 BA20 BB07 BB13 BB29 BB30 BB32 CA02 CA03 CA06 DA00 DA23 DA24 FA08 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Toshio Hayashi 2500 Hagizono, Chigasaki-shi, Kanagawa Japan Vacuum Engineering Co., Ltd. F-term (reference) 4K057 DA13 DB06 DB15 DB20 DD03 DE06 DE08 DE14 DE20 DM09 DN01 5F004 AA02 AA04 BA20 BB07 BB13 BB29 BB30 BB32 CA02 CA03 CA06 DA00 DA23 DA24 FA08
Claims (12)
極を高周波電源に接続し、上部電極の周辺部を誘電体で
構成すると共に誘電体内に高周波コイルを埋め込んで真
空室内に放電アンテナを形成してなるプラズマ発生装置
を有し、真空室の側壁部を金属円筒体で構成し、真空室
の下部には上部電極と対向させて基板電極を設け、基板
電極を高周波電源に接続し、ハロゲン系のガスを主体と
する気体を真空中に導入し、低圧でプラズマを形成する
とともに導入気体を分解し、発生した原子、分子、ラジ
カル、イオンを積極的に利用し、プラズマに接する基板
電極に交番電場或いは高周波電場を印加して基板電極上
に載置された基板をエッチングする反応性イオンエッチ
ング装置において、 上部電極、高周波コイル及び基板電極に接続されたそれ
ぞれの電源を時間的に制御してレジストに対して高選択
比でエッチングができるようにする電力制御手段を設け
たことを特徴とする反応性イオンエッチング装置。An upper electrode is provided in an upper portion of a vacuum chamber, the upper electrode is connected to a high-frequency power source, a peripheral portion of the upper electrode is formed of a dielectric, and a high-frequency coil is embedded in the dielectric to form a discharge antenna in the vacuum chamber. Having a plasma generating device formed, the side wall of the vacuum chamber is formed of a metal cylinder, a substrate electrode is provided at the lower part of the vacuum chamber so as to face the upper electrode, and the substrate electrode is connected to a high-frequency power supply; Substrate electrode in contact with plasma by introducing a gas mainly composed of halogen-based gas into vacuum, forming plasma at low pressure and decomposing the introduced gas, making active use of generated atoms, molecules, radicals and ions In a reactive ion etching apparatus that applies an alternating electric field or a high-frequency electric field to a substrate, and etches the substrate placed on the substrate electrode, the reactive electrode is connected to the upper electrode, the high-frequency coil, and the substrate electrode. Reactive ion etching apparatus characterized in that a power control unit that allows the etching with a high selectivity to the resist supply, respectively temporally controlled.
材或いは炭素材もしくはそれらの化合物か複合物で構成
されていることを特徴とする請求項１に記載の反応性イ
オンエッチング装置。2. The reactive ion etching apparatus according to claim 1, wherein an inner wall of the upper electrode is made of a polymer compound, a silicon material, a carbon material, or a compound or a composite thereof.
がＡｒ、Ｈ2、ＣＯ、ハロゲン化合物から成ることを特
徴とする請求項１に記載の反応性イオンエッチング装
置。3. The reactive ion etching apparatus according to claim 1, wherein the gas introduced into the vacuum chamber for forming a film comprises Ar, H 2 , CO, and a halogen compound.
極に高周波電力を供給できるようにし、上部電極の周辺
部を誘電体で構成すると共に誘電体内に高周波コイルを
埋め込んで真空室内に放電アンテナを形成してなるプラ
ズマ発生装置を有し、真空室の側壁部を金属円筒体で構
成し、真空室の下部には上部電極と対向させて基板電極
を設け、基板電極に高周波電力を供給できるようにし、
ハロゲン系のガスを主体とする気体を真空中に導入し、
低圧でプラズマを形成すると共に導入気体を分解し、発
生した原子、分子、ラジカル、イオンを積極的に利用
し、プラズマに接する基板電極に交番電場或いは高周波
電場を印加して基板電極上に載置された基板をエッチン
グする反応性イオンエッチング方法において、 ガス導入後に上部電極と高周波アンテナに電力を供給し
て上部電極をスパッタエッチングして基板電極上に載置
された基板上に薄い皮膜を形成し、その後、基板電極に
電力を供給するようにしたことを特徴とする反応性イオ
ンエッチング方法。4. An upper electrode is provided in an upper portion of the vacuum chamber so that high-frequency power can be supplied to the upper electrode. A peripheral portion of the upper electrode is made of a dielectric, and a high-frequency coil is embedded in the dielectric to discharge into the vacuum chamber. It has a plasma generator with an antenna formed, the side wall of the vacuum chamber is made of a metal cylinder, and a substrate electrode is provided at the lower part of the vacuum chamber so as to face the upper electrode, and high-frequency power is supplied to the substrate electrode To be able to
A gas mainly containing a halogen-based gas is introduced into a vacuum,
Plasma is formed at low pressure and the introduced gas is decomposed, and the generated atoms, molecules, radicals, and ions are positively used, and an alternating electric field or a high-frequency electric field is applied to the substrate electrode in contact with the plasma and placed on the substrate electrode. In the reactive ion etching method of etching the substrate, after supplying the gas, power is supplied to the upper electrode and the high-frequency antenna to sputter-etch the upper electrode to form a thin film on the substrate placed on the substrate electrode. And a method for supplying power to the substrate electrode thereafter.
物、硅素材或いは炭素材もしくはそれらの化合物か複合
物を用いることを特徴とする請求項４に記載の反応性イ
オンエッチング方法。5. The reactive ion etching method according to claim 4, wherein a polymer compound, a silicon material, a carbon material, or a compound or a composite thereof is used as an inner wall material of the upper electrode.
Ｈ2、ＣＯ、ハロゲン化合物を真空室に導入することを
特徴とする請求項４に記載の反応性イオンエッチング方
法。6. As a gas for forming a film, Ar,
The reactive ion etching method according to claim 4, wherein H 2 , CO, and a halogen compound are introduced into a vacuum chamber.
位置である環状磁気中性線を形成する磁場発生手段を設
けると共に、この磁気中性線に沿って交番電場を加えて
この磁気中性線に放電プラズマを発生させる１重を含む
多重の高周波コイルを設けて成るプラズマ発生装置を有
し、真空室の側壁部を金属円筒体で構成し、真空室の下
部に基板電極を、真空室の上部には基板電極と対向させ
て上部電極を設け、基板電極及び上部電極をそれぞれ高
周波電源に接続し、上部電極の周辺部を誘電体で構成す
ると共に誘電体内に上記高周波コイルを埋め込んで真空
室内に放電アンテナを形成し、ハロゲン系のガスを主体
とする気体を真空中に導入し、低圧でプラズマを形成す
ると共に導入気体を分解し、発生した原子、分子、ラジ
カル、イオンを積極的に利用し、プラズマに接する基板
電極に交番電場或いは高周波電場を印加して電極上に載
置された基板をエッチングする反応性イオンエッチング
装置において、 上部電極、高周波コイル及び基板電極に接続されたそれ
ぞれの電源を時間的に制御してレジストに対して高選択
比でエッチングができるようにする電力制御手段を設け
たことを特徴とする反応性イオンエッチング装置。7. A magnetic field generating means for forming an annular magnetic neutral line at a position where a magnetic field continuously exists in a vacuum chamber at a zero magnetic field is provided, and an alternating electric field is applied along the magnetic neutral line to generate a magnetic neutral line. It has a plasma generator which is provided with multiple high-frequency coils including a single layer for generating discharge plasma in the active ray. The side wall of the vacuum chamber is made of a metal cylinder, and the substrate electrode is placed under the vacuum chamber. At the top of the chamber, an upper electrode is provided facing the substrate electrode, the substrate electrode and the upper electrode are respectively connected to a high-frequency power source, and a peripheral portion of the upper electrode is formed of a dielectric and the high-frequency coil is embedded in the dielectric. Forming a discharge antenna in a vacuum chamber, introducing a gas mainly composed of halogen-based gas into vacuum, forming plasma at low pressure and decomposing the introduced gas, and actively generating generated atoms, molecules, radicals, and ions. In a reactive ion etching apparatus that applies an alternating electric field or a high-frequency electric field to a substrate electrode in contact with plasma to etch a substrate mounted on the electrode, the substrate is connected to an upper electrode, a high-frequency coil, and a substrate electrode. A reactive ion etching apparatus comprising a power control means for temporally controlling respective power supplies to enable etching with a high selectivity to a resist.
材或いは炭素材もしくはそれらの化合物か複合物で構成
されていることを特徴とする請求項７に記載の反応性イ
オンエッチング装置。8. The reactive ion etching apparatus according to claim 7, wherein the inner wall of the upper electrode is made of a polymer compound, a silicon material, a carbon material, or a compound or a composite thereof.
がＡｒ、Ｈ2、ＣＯ、ハロゲン化合物から成ることを特
徴とする請求項７に記載の反応性イオンエッチング装
置。9. The reactive ion etching apparatus according to claim 7, wherein the gas introduced into the vacuum chamber for forming a film comprises Ar, H 2 , CO, and a halogen compound.
の位置である環状磁気中性線を形成する磁場発生手段を
設けると共に、この磁気中性線に沿って交番電場を加え
てこの磁気中性線に放電プラズマを発生させる１重を含
む多重の高周波コイルを設けて成るプラズマ発生装置を
有し、真空室の側壁部を金属円筒体で構成し、真空室の
下部に基板電極を、真空室の上部には基板電極と対向さ
せて上部電極を設け、基板電極及び上部電極をそれぞれ
高周波電力を供給できるようにし、上部電極の周辺部を
誘電体で構成すると共に誘電体内に上記高周波コイルを
埋め込んで真空室内に放電アンテナを形成し、ハロゲン
系のガスを主体とする気体を真空中に導入し、低圧でプ
ラズマを形成すると共に導入気体を分解し、発生した原
子、分子、ラジカル、イオンを積極的に利用し、プラズ
マに接する基板電極に交番電場或いは高周波電場を印加
して電極上に載置された基板をエッチングする反応性イ
オンエッチング方法において、 ガス導入後に上部電極と高周波アンテナに電力を供給し
て上部電極をスパッタエッチングして基板電極上に載置
された基板上に薄い皮膜を形成し、その後、基板電極に
電力を供給するようにしたことを特徴とする反応性イオ
ンエッチング方法。10. A magnetic field generating means for forming an annular magnetic neutral line at a position of zero magnetic field continuously present in a vacuum chamber, and an alternating electric field is applied along the magnetic neutral line to generate a magnetic neutral line. It has a plasma generator which is provided with multiple high-frequency coils including a single layer for generating discharge plasma in the active ray. The side wall of the vacuum chamber is made of a metal cylinder, and the substrate electrode is placed under the vacuum chamber. An upper electrode is provided at the upper part of the chamber so as to face the substrate electrode, and the substrate electrode and the upper electrode can be supplied with high-frequency power, respectively.A peripheral portion of the upper electrode is made of a dielectric, and the high-frequency coil is placed in the dielectric. Embedding it to form a discharge antenna in a vacuum chamber, introducing a gas mainly composed of halogen-based gas into vacuum, forming plasma at low pressure and decomposing the introduced gas, generating atoms, molecules, and radicals In a reactive ion etching method in which an alternating electric field or a high-frequency electric field is applied to a substrate electrode in contact with a plasma to positively utilize ions to etch a substrate mounted on the electrode, the upper electrode and the high-frequency antenna are introduced after gas introduction. Reactive ion, characterized in that a thin film is formed on the substrate placed on the substrate electrode by supplying power to the substrate and sputter etching the upper electrode, and then supplying power to the substrate electrode. Etching method.
物、硅素材或いは炭素材もしくはそれらの化合物か複合
物を用いることを特徴とする請求項10に記載の反応性イ
オンエッチング方法。11. The reactive ion etching method according to claim 10, wherein a polymer compound, a silicon material, a carbon material, or a compound or composite thereof is used as an inner wall material of the upper electrode.
2、ＣＯ、ハロゲン化合物を真空室に導入することを特
徴とする請求項10に記載の反応性イオンエッチング方
法。12. Ar, H are used as a gas for forming a film.
2, CO, reactive ion etching method according to claim 10, characterized in that introduced into the vacuum chamber a halogen compound.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21652798A JP4077939B2 (en) | 1998-07-16 | 1998-07-16 | Reactive ion etching method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21652798A JP4077939B2 (en) | 1998-07-16 | 1998-07-16 | Reactive ion etching method and apparatus |
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| Publication Number | Publication Date |
|---|---|
| JP2000036489A true JP2000036489A (en) | 2000-02-02 |
| JP4077939B2 JP4077939B2 (en) | 2008-04-23 |
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|---|---|---|---|
| JP21652798A Expired - Fee Related JP4077939B2 (en) | 1998-07-16 | 1998-07-16 | Reactive ion etching method and apparatus |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100513442B1 (en) * | 1999-06-15 | 2005-09-07 | 삼성전자주식회사 | Inductive coupled plasma etch apparatus |
| KR100520400B1 (en) * | 2003-12-26 | 2005-10-11 | 위순임 | Apparatus for generating plasma at atmospheric pressure having dual antenna |
| KR100756112B1 (en) | 2003-12-26 | 2007-09-05 | 위순임 | Atmospheric Plasma Generator with Induction Antenna |
| KR100845285B1 (en) * | 2006-09-08 | 2008-07-09 | 삼성전자주식회사 | Plasma Generator and Method |
| JP2008243918A (en) * | 2007-03-26 | 2008-10-09 | Ulvac Japan Ltd | Dry etching method |
| JP2011238935A (en) * | 2004-07-02 | 2011-11-24 | Ulvac Japan Ltd | Etching method and apparatus |
| US20130160795A1 (en) * | 2011-12-27 | 2013-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma Etcher Design with Effective No-Damage In-Situ Ash |
-
1998
- 1998-07-16 JP JP21652798A patent/JP4077939B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100513442B1 (en) * | 1999-06-15 | 2005-09-07 | 삼성전자주식회사 | Inductive coupled plasma etch apparatus |
| KR100520400B1 (en) * | 2003-12-26 | 2005-10-11 | 위순임 | Apparatus for generating plasma at atmospheric pressure having dual antenna |
| KR100756112B1 (en) | 2003-12-26 | 2007-09-05 | 위순임 | Atmospheric Plasma Generator with Induction Antenna |
| JP2011238935A (en) * | 2004-07-02 | 2011-11-24 | Ulvac Japan Ltd | Etching method and apparatus |
| KR100845285B1 (en) * | 2006-09-08 | 2008-07-09 | 삼성전자주식회사 | Plasma Generator and Method |
| JP2008243918A (en) * | 2007-03-26 | 2008-10-09 | Ulvac Japan Ltd | Dry etching method |
| US20130160795A1 (en) * | 2011-12-27 | 2013-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma Etcher Design with Effective No-Damage In-Situ Ash |
| US9786471B2 (en) * | 2011-12-27 | 2017-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma etcher design with effective no-damage in-situ ash |
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| Publication number | Publication date |
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