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JP2008193210A - Analog-to-digital converter - Google Patents

Analog-to-digital converter Download PDF

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Publication number
JP2008193210A
JP2008193210A JP2007022998A JP2007022998A JP2008193210A JP 2008193210 A JP2008193210 A JP 2008193210A JP 2007022998 A JP2007022998 A JP 2007022998A JP 2007022998 A JP2007022998 A JP 2007022998A JP 2008193210 A JP2008193210 A JP 2008193210A
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transistors
analog
digital converter
parallel
channel mos
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Takeshi Ikeda
毅 池田
Hiroshi Miyagi
弘 宮城
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NSC Co Ltd
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Nigata Semitsu Co Ltd
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Priority to JP2007022998A priority Critical patent/JP2008193210A/en
Priority to PCT/JP2008/052080 priority patent/WO2008093899A1/en
Publication of JP2008193210A publication Critical patent/JP2008193210A/en
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12Analogue/digital converters
    • H03M1/34Analogue value compared with reference values
    • H03M1/36Analogue value compared with reference values simultaneously only, i.e. parallel type
    • H03M1/361Analogue value compared with reference values simultaneously only, i.e. parallel type having a separate comparator and reference value for each quantisation level, i.e. full flash converter type
    • H03M1/362Analogue value compared with reference values simultaneously only, i.e. parallel type having a separate comparator and reference value for each quantisation level, i.e. full flash converter type the reference values being generated by a resistive voltage divider
    • H03M1/365Analogue value compared with reference values simultaneously only, i.e. parallel type having a separate comparator and reference value for each quantisation level, i.e. full flash converter type the reference values being generated by a resistive voltage divider the voltage divider being a single resistor string
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83138Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different shapes or dimensions of their gate conductors

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Analogue/Digital Conversion (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To reduce a circuit scale and power consumption in a flash type A/D converter. <P>SOLUTION: A plurality of transistors N<SB>0</SB>to N<SB>n</SB>having respectively different threshold voltages are arranged in parallel, an analog input signal is supplied to respective gates of the plurality of transistors N<SB>0</SB>to N<SB>n</SB>and output signals from respective transistors N<SB>0</SB>to N<SB>n</SB>are encoded to obtain a digital output signal, so that as compared with a conventional case that comparators each of which is composed of at least two transistors are connected in parallel, the number of transistors to be used can be reduced to a half and the necessity of a reference voltage generation circuit can be eliminated. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明はアナログ−デジタル変換器に関し、特に、フラッシュ型のA/D変換器に用いて好適なものである。   The present invention relates to an analog-digital converter, and is particularly suitable for use in a flash type A / D converter.

近年、アナログ−デジタル混載のシステムLSIにおけるアナログ回路の低電圧化の進展に伴って、オペアンプを使用しないA/D変換器の開発が盛んに行われている。その代表例にフラッシュ型(並列型)のA/D変換器がある。フラッシュ型は、図3に示すように、多数のコンパレータ51を並列に並べて、アナログ入力信号の電圧値Vinを複数の基準電圧値VR0〜VRnと一斉に比較し、アナログ入力電圧Vinがどの基準電圧VR0〜VRnと一致するかを一瞬のうちに判定していくものである(例えば、特許文献1,2参照)。
特開平5−199116号公報 特開平9−83316号公報
In recent years, A / D converters that do not use an operational amplifier have been actively developed with the progress of lowering the voltage of an analog circuit in an analog-digital mixed system LSI. A typical example is a flash (parallel) A / D converter. Flash type, as shown in FIG. 3, the number of comparators 51 are arranged in parallel, the voltage value V in of the analog input signal is compared simultaneously with a plurality of reference voltage values V R0 ~V Rn, the analog input voltage V in Which reference voltages V R0 to V Rn match with each other (for example, refer to Patent Documents 1 and 2).
Japanese Patent Laid-Open No. 5-199116 Japanese Patent Laid-Open No. 9-83316

フラッシュ型のA/D変換器は、アナログ入力信号のレベルを一発の動作で判定するため、高速化には向いている。しかしながら、図3に示すように、多数のコンパレータ51を設けるとともに、複数の抵抗Rを直列に接続した基準電圧発生回路52も設ける必要がある。例えば10ビットでは1023個のコンパレータ51と1023個の抵抗Rとが必要で、2つの入力を比較するコンパレータ51は少なくとも4個のトランジスタを組み合わせた構成であるため、最低でも4092個ものトランジスタが必要となる。そのため、回路規模および消費電力が増大するという問題があった。   Since the flash type A / D converter determines the level of the analog input signal with a single operation, it is suitable for speeding up. However, as shown in FIG. 3, it is necessary to provide a large number of comparators 51 and a reference voltage generation circuit 52 in which a plurality of resistors R are connected in series. For example, in 10 bits, 1023 comparators 51 and 1023 resistors R are required, and the comparator 51 that compares two inputs is configured by combining at least four transistors. Therefore, at least 4092 transistors are required. It becomes. Therefore, there is a problem that the circuit scale and power consumption increase.

本発明は、このような問題を解決するために成されたものであり、フラッシュ型のA/D変換器において回路規模および消費電力の低減を図ることを目的とする。   The present invention has been made to solve such a problem, and an object of the present invention is to reduce the circuit scale and power consumption of a flash A / D converter.

上記した課題を解決するために、本発明では、閾値電圧を異ならせた複数のトランジスタを並列に並べて、複数のトランジスタの各ゲートにアナログ入力信号を供給し、各トランジスタの出力信号をエンコードすることによってデジタル出力信号を得るようにしている。   In order to solve the above problems, in the present invention, a plurality of transistors having different threshold voltages are arranged in parallel, an analog input signal is supplied to each gate of the plurality of transistors, and an output signal of each transistor is encoded. Thus, a digital output signal is obtained.

このように構成した本発明によれば、ゲートに供給されるアナログ入力電圧が閾値電圧より小さいトランジスタはオフ、閾値電圧より大きいトランジスタはオンとなる。これにより、どのトランジスタがオフまたはオンとなるかによってアナログ入力信号の電圧レベルが判定され、その電圧レベルに応じたデジタル出力信号が得られるようになる。少なくとも2つのトランジスタから成るコンパレータを並列に接続する従来例に比べて、電圧レベル判定用のトランジスタの使用数は半分で済む。このため、回路規模および消費電力の低減を図ることができる。   According to the present invention configured as described above, a transistor whose analog input voltage supplied to the gate is smaller than the threshold voltage is turned off, and a transistor larger than the threshold voltage is turned on. Thus, the voltage level of the analog input signal is determined depending on which transistor is turned off or on, and a digital output signal corresponding to the voltage level can be obtained. Compared to the conventional example in which a comparator composed of at least two transistors is connected in parallel, the number of transistors used for determining the voltage level can be halved. For this reason, the circuit scale and power consumption can be reduced.

以下、本発明の一実施形態を図面に基づいて説明する。図1は、本実施形態によるフラッシュ型A/D変換器の構成例を示す図である。図1に示すように、本実施形態によるフラッシュ型A/D変換器は、並列回路部1およびエンコーダ2(本発明のエンコード回路部に相当)を備えている。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram illustrating a configuration example of the flash A / D converter according to the present embodiment. As shown in FIG. 1, the flash A / D converter according to the present embodiment includes a parallel circuit unit 1 and an encoder 2 (corresponding to the encode circuit unit of the present invention).

並列回路部1は、閾値電圧を異ならせた複数のトランジスタN,N,N,・・・,Nを電源VDDとグランドGNDとの間に並列に接続して構成されている。また、各トランジスタN〜Nと電源VDDとの間には、抵抗R〜Rが接続されている。ここで、複数のトランジスタN〜NはNチャネルMOSトランジスタで構成されている。また、各トランジスタN〜Nの閾値電圧は、当該トランジスタに関する回路パラメータ、例えばゲート長Lやゲート幅Wを異ならせることによって調整している。 The parallel circuit unit 1 is configured by connecting a plurality of transistors N 0 , N 1 , N 2 ,..., N n having different threshold voltages in parallel between a power supply VDD and a ground GND. Resistors R 0 to R n are connected between the transistors N 0 to N n and the power supply VDD. Here, the plurality of transistors N 0 to N n are N-channel MOS transistors. In addition, the threshold voltage of each of the transistors N 0 to N n is adjusted by changing circuit parameters relating to the transistor, for example, the gate length L and the gate width W.

各トランジスタN〜Nの閾値電圧をそれぞれVT0,VT1,VT2,・・・,VTnとした場合、例えばVT0<VT1<VT2<・・・<VTnとなるように各トランジスタN〜Nの閾値電圧を調整する。そして、このように閾値電圧を異ならせたトランジスタN〜Nの各ゲートにアナログ入力信号を供給する。このようにすると、ゲートに供給されるアナログ入力電圧Vinが閾値電圧より小さいトランジスタはオフ、閾値電圧より大きいトランジスタはオンとなる。 V T0 threshold voltage of each transistor N 0 to N n respectively, V T1, V T2, ··· , when the V Tn, for example, V T0 <V T1 <V T2 < so as to be · · · <V Tn The threshold voltage of each of the transistors N 0 to N n is adjusted. Then, an analog input signal is supplied to each gate of the transistors N 0 to N n having different threshold voltages. In this manner, the transistor analog input voltage V in supplied to the gate is less than the threshold voltage off, is turned on larger transistors than the threshold voltage.

エンコーダ2は、各トランジスタN〜Nの出力信号をエンコードしてデジタル出力信号を得る。すなわち、各トランジスタN〜Nより出力される信号の電圧値V〜Vは、トランジスタN〜Nがオンかオフかによってハイレベルまたはロウレベルの何れかとなっている。エンコーダ2は、各トランジスタN〜Nの出力信号のどの電圧値がハイレベルでどの電圧値がロウレベルとなっているかに応じて、所定ビットのデジタル信号を発生する。 The encoder 2 encodes the output signal of each of the transistors N 0 to N n to obtain a digital output signal. That is, the voltage value V 0 ~V n of the signal output from the transistors N 0 to N n, the transistor N 0 to N n is in either the high level or low level in response to the on or off. The encoder 2 generates a digital signal of a predetermined bit according to which voltage value of the output signal of each of the transistors N 0 to N n is high level and which voltage value is low level.

以上詳しく説明したように、本実施形態では、閾値電圧を異ならせた複数のトランジスタN〜Nを並列に並べて、複数のトランジスタN〜Nの各ゲートにアナログ入力信号を供給し、各トランジスタN〜Nの出力信号をエンコードすることによってデジタル出力信号を得るようにしている。このような構成によれば、少なくとも2つのトランジスタから成るコンパレータを並列に接続する従来のフラッシュ型A/D変換器に比べて、トランジスタの使用数は半分で済み、基準電圧発生回路も設ける必要がない。このため、回路規模および消費電力の低減を図ることができる。 As described above in detail, in this embodiment, a plurality of transistors N 0 to N n having different threshold voltages are arranged in parallel, and an analog input signal is supplied to each gate of the plurality of transistors N 0 to N n . A digital output signal is obtained by encoding the output signal of each of the transistors N 0 to N n . According to such a configuration, the number of transistors used is half that of a conventional flash A / D converter in which a comparator composed of at least two transistors is connected in parallel, and a reference voltage generation circuit is also required. Absent. For this reason, the circuit scale and power consumption can be reduced.

なお、上記実施形態では、負荷として抵抗R〜Rを用いる例について説明したが、定電流回路を用いても良い。 In the above embodiment, the example in which the resistors R 0 to R n are used as the load has been described. However, a constant current circuit may be used.

また、上記実施形態では、複数のトランジスタとしてNチャネルMOSトランジスタを用いる例について説明したが、PチャネルMOSトランジスタとしても良い。この場合におけるPMOSトランジスタの閾値電圧も、当該トランジスタに関する回路パラメータ、例えばゲート長Lやゲート幅Wを異ならせることによって調整することが可能である。または、PチャネルMOSトランジスタのバックゲートに供給する電圧値を異ならせることによって、各トランジスタの閾値電圧を異ならせるようにすることも可能である。   In the above embodiment, an example in which N-channel MOS transistors are used as the plurality of transistors has been described. However, P-channel MOS transistors may be used. The threshold voltage of the PMOS transistor in this case can also be adjusted by changing circuit parameters relating to the transistor, for example, the gate length L and the gate width W. Alternatively, the threshold voltage of each transistor can be made different by changing the voltage value supplied to the back gate of the P-channel MOS transistor.

図2は、PチャネルMOSトランジスタを用いたフラッシュ型A/D変換器の構成例を示す図である。図2に示すフラッシュ型A/D変換器は、並列回路部11、エンコーダ12(本発明のエンコード回路部に相当)および基準電圧発生回路13を備えている。   FIG. 2 is a diagram showing a configuration example of a flash A / D converter using a P-channel MOS transistor. The flash A / D converter shown in FIG. 2 includes a parallel circuit unit 11, an encoder 12 (corresponding to the encode circuit unit of the present invention), and a reference voltage generation circuit 13.

並列回路部11は、閾値電圧を異ならせた複数のPMOSトランジスタP,P,P,・・・,Pを電源VDDとグランドGNDとの間に並列に接続して構成されている。各トランジスタP〜PとグランドGNDとの間には抵抗R〜Rが接続されている。各トランジスタP〜Pの閾値電圧をそれぞれVT0,VT1,VT2,・・・,VTnとした場合、例えばVT0<VT1<VT2<・・・<VTnとなるように各トランジスタP〜Pの閾値電圧を調整する。 The parallel circuit unit 11 is configured by connecting a plurality of PMOS transistors P 0 , P 1 , P 2 ,..., P n having different threshold voltages in parallel between the power supply VDD and the ground GND. . Resistors R 0 to R n are connected between the transistors P 0 to P n and the ground GND. V T0 threshold voltage of each transistor P 0 to P n, respectively, V T1, V T2, ··· , when the V Tn, for example, V T0 <V T1 <V T2 < so as to be · · · <V Tn The threshold voltages of the transistors P 0 to P n are adjusted.

ここで、各トランジスタP〜Pの閾値電圧は、当該トランジスタP〜Pのバックゲートに供給する電圧値を異ならせることによって調整している。バックゲートに供給する電圧値は、基準電圧発生回路13によって発生する。基準電圧発生回路13は、複数の抵抗Rを直列接続して構成されており、各抵抗の入出力タップから値の異なる電圧が取り出され、それぞれが各トランジスタP〜Pのバックゲートに供給されるようになっている。 Here, the threshold voltage of each transistor P 0 to P n is adjusted by varying the transistor P 0 to P voltage value supplied to the back gate of the n. The voltage value supplied to the back gate is generated by the reference voltage generation circuit 13. The reference voltage generation circuit 13 is configured by connecting a plurality of resistors R in series, and voltages having different values are taken out from input / output taps of the resistors and supplied to the back gates of the transistors P 0 to P n , respectively. It has come to be.

このように閾値電圧を異ならせたトランジスタP〜Pの各ゲートにアナログ入力信号を供給する。このようにすると、ゲートに供給されるアナログ入力電圧Vinが閾値電圧より小さいトランジスタはオフ、閾値電圧より大きいトランジスタはオンとなる。エンコーダ12は、各トランジスタP〜Pの出力信号をエンコードしてデジタル出力信号を得る。 An analog input signal is supplied to each gate of the transistors P 0 to P n having different threshold voltages. In this way, the transistor analog input voltage V in supplied to the gate is less than the threshold voltage is turned off, it is turned on larger transistors than the threshold voltage. The encoder 12 encodes the output signals of the transistors P 0 to P n to obtain a digital output signal.

図2のように構成した場合、少なくとも2つのトランジスタから成るコンパレータを並列に接続する従来のフラッシュ型A/D変換器に比べて、トランジスタの使用数は半分で済む。このため、回路規模および消費電力の低減を図ることができる。   When configured as shown in FIG. 2, the number of transistors used can be halved compared to a conventional flash A / D converter in which a comparator composed of at least two transistors is connected in parallel. For this reason, the circuit scale and power consumption can be reduced.

その他、上記実施形態は、何れも本発明を実施するにあたっての具体化の一例を示したものに過ぎず、これらによって本発明の技術的範囲が限定的に解釈されてはならないものである。すなわち、本発明はその精神、またはその主要な特徴から逸脱することなく、様々な形で実施することができる。   In addition, each of the above-described embodiments is merely an example of implementation in carrying out the present invention, and the technical scope of the present invention should not be construed in a limited manner. In other words, the present invention can be implemented in various forms without departing from the spirit or main features thereof.

本発明は、複数のトランジスタによってアナログ入力信号の電圧値を複数の異なる電圧値と一斉に比較するフラッシュ型のA/D変換器に用いて好適なものである。   The present invention is suitable for use in a flash-type A / D converter that simultaneously compares the voltage value of an analog input signal with a plurality of different voltage values by a plurality of transistors.

本実施形態によるフラッシュ型A/D変換器の構成例を示す図である。It is a figure which shows the structural example of the flash type A / D converter by this embodiment. 本実施形態によるフラッシュ型A/D変換器の他の構成例を示す図である。It is a figure which shows the other structural example of the flash type A / D converter by this embodiment. 従来のフラッシュ型A/D変換器の構成を示す図である。It is a figure which shows the structure of the conventional flash type A / D converter.

符号の説明Explanation of symbols

1,11 並列回路部
2,12 エンコーダ
13 基準電圧発生回路
DESCRIPTION OF SYMBOLS 1,11 Parallel circuit part 2,12 Encoder 13 Reference voltage generation circuit

Claims (5)

閾値電圧を異ならせた複数のトランジスタを電源とグランドとの間に並列に接続し、上記複数のトランジスタの各ゲートにアナログ入力信号を供給するように成された並列回路部と、
上記複数のトランジスタの出力信号をエンコードしてデジタル出力信号を得るエンコード回路部とを備えたことを特徴とするアナログ−デジタル変換器。
A plurality of transistors having different threshold voltages connected in parallel between a power source and a ground, and a parallel circuit unit configured to supply an analog input signal to each gate of the plurality of transistors;
An analog-to-digital converter, comprising: an encoding circuit unit that encodes output signals of the plurality of transistors to obtain a digital output signal.
上記複数のトランジスタはNチャネルMOSトランジスタであることを特徴とする請求項1に記載のアナログ−デジタル変換器。 2. The analog-digital converter according to claim 1, wherein the plurality of transistors are N-channel MOS transistors. 上記NチャネルMOSトランジスタに関する回路パラメータを異ならせることによって、上記複数のトランジスタの閾値電圧を異ならせたことを特徴とする請求項2に記載のアナログ−デジタル変換器。 3. The analog-to-digital converter according to claim 2, wherein the threshold voltages of the plurality of transistors are varied by varying circuit parameters relating to the N-channel MOS transistor. 上記複数のトランジスタはPチャネルMOSトランジスタであることを特徴とする請求項1に記載のアナログ−デジタル変換器。 2. The analog-to-digital converter according to claim 1, wherein the plurality of transistors are P-channel MOS transistors. 上記PチャネルMOSトランジスタのバックゲートに供給する電圧値を異ならせることによって、上記複数のトランジスタの閾値電圧を異ならせたことを特徴とする請求項4に記載のアナログ−デジタル変換器。 5. The analog-digital converter according to claim 4, wherein the threshold voltages of the plurality of transistors are made different by making the voltage values supplied to the back gates of the P-channel MOS transistors different.
JP2007022998A 2007-02-01 2007-02-01 Analog-to-digital converter Pending JP2008193210A (en)

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* Cited by examiner, † Cited by third party
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Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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JPS5923625A (en) * 1982-07-30 1984-02-07 Citizen Watch Co Ltd Signal processing circuit
JP2854204B2 (en) * 1991-11-07 1999-02-03 川崎製鉄株式会社 A / D converter

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WO2011099368A1 (en) * 2010-02-12 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP2011188477A (en) * 2010-02-12 2011-09-22 Semiconductor Energy Lab Co Ltd Semiconductor device, and display device
US8610696B2 (en) 2010-02-12 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
JP2015122807A (en) * 2010-02-12 2015-07-02 株式会社半導体エネルギー研究所 Circuit and display device
JP2016178657A (en) * 2010-02-12 2016-10-06 株式会社半導体エネルギー研究所 Circuit and display device
JP2014142698A (en) * 2013-01-22 2014-08-07 Asahi Kasei Electronics Co Ltd Regulator

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