JP2008185869A - Electro-optical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electro-optical device capable of preventing disturbance light from being made incident on a photosensor, from a pixel region side. <P>SOLUTION: A photosensor 310 is formed in an outside region of a pixel region 10b on an element substrate 10 of an electro-optical device 100. A second columnar spacer 4b, functioning as a light-shielding projection, is formed between the photosensor 310 and the pixel region 10b on the element substrate 10. The second columnar spacer 4b comprises a photosensitive resin that is formed simultaneously with a first columnar spacer 4a defining the gap dimension (layer thickness of a liquid crystal layer 50) between the element substrate 10 and a counter substrate 20 in the pixel region 10b. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an electro-optical device including an optical sensor.

  Electronic devices such as personal computers and mobile phones equipped with an electro-optical device as a display device are used in various environments with different ambient light intensities. Accordingly, if the driving conditions in the electro-optical device are changed in accordance with changes in the ambient light, it is possible to improve image quality and reduce power consumption.

  For example, in a transmissive or anti-transmissive liquid crystal device which is a typical electro-optical device, a backlight device is provided on the back surface of the liquid crystal panel, and light emitted from the backlight device is modulated by the liquid crystal panel. . In such a liquid crystal device, the power consumption of the backlight device is large. Therefore, an optical sensor composed of discrete components is mounted on the liquid crystal device, and external light (environmental light) is measured by this optical sensor, and the intensity of the backlight device is adjusted according to the measurement result to reduce power consumption. It has been proposed to plan (see, for example, Patent Document 1).

  However, the technique described in Patent Document 1 has a problem that man-hours and costs increase because an optical sensor made of discrete components is mounted on a flexible substrate.

In view of this, it is conceivable to form a photosensor on an element substrate by using a process of forming a thin film transistor (TFT / Thin Film Transistor) on the element substrate of the liquid crystal panel. Even without using an optical sensor, it is possible to detect external light incident from the side of the light-transmitting counter substrate.
JP 2003-78838 A

  However, in the liquid crystal panel, since display is performed in the pixel region, light may leak from the pixel region side to the photosensor. For example, out of the light emitted from the backlight device toward the liquid crystal panel, the light emitted in an oblique direction may be reflected by the counter substrate and enter the optical sensor as disturbance light from the pixel region side. Light reduces the sensitivity of the photosensor.

  In view of the above problems, an object of the present invention is to provide an electro-optical device that can prevent disturbance light from entering the optical sensor from the pixel region side.

  In order to solve the above problems, in the present invention, a pixel region in which a first substrate and a second substrate are bonded to each other with a predetermined gap and a plurality of pixels are arranged in the panel is provided. In the electro-optical device configured as described above, an optical sensor that detects incident target light is formed in an outer region of the pixel region of at least one of the first substrate and the second substrate. One of the substrate and the second substrate is formed with a light-shielding protrusion protruding from the one substrate in a region between the photosensor and the pixel region. .

  In the present invention, an optical sensor is formed in an outer region of the pixel region, and the optical sensor detects incident target light. Here, since display is performed in the pixel region, there is a possibility that light leaks from the pixel region side to the photosensor. In the present invention, one of the first substrate and the second substrate is used. Since a light-shielding projection that protrudes from one substrate is formed between the photosensor and the pixel region, disturbance light traveling from the pixel region side toward the photosensor can be blocked. Therefore, disturbance light can be prevented from entering the optical sensor, and thus the sensitivity of the optical sensor can be increased.

  In the present invention, the one substrate may be formed with a plurality of columnar spacers protruding from the one substrate and protruding toward the other substrate. In this case, the plurality of columnar spacers include: In the pixel region, a plurality of first columnar spacers that abut against the other substrate to define the size of the gap, and a second light shielding protrusion formed between the photosensor and the pixel region. It is preferable to adopt a configuration that includes a columnar spacer. If comprised in this way, the process of forming the columnar spacer which controls the clearance gap between a 1st board | substrate and a 2nd board | substrate can be utilized, and the processus | protrusion for light shielding can be formed, and it is not necessary to add a new process. .

  In the present invention, the light-shielding protrusions are arranged in a first direction along an end of the pixel region to form a protrusion row, and the protrusion row is in a second direction orthogonal to the first direction. A plurality of rows are provided, and when two adjacent projection rows in the plurality of projection rows are viewed from the second direction, the space between the light shielding projections included in one projection row is included in the other projection row. It is preferable that the light-shielding projection is closed. With this configuration, it is possible to reliably block light traveling from the pixel region side to the optical sensor without forming an excessive light shielding projection.

  In the present invention, the light shielding protrusion is, for example, a rod-shaped protrusion having substantially the same dimension in the first direction and the dimension in the second direction. For example, the light-shielding protrusion is a round bar-shaped protrusion having a circular cross section or a square bar-shaped protrusion having a regular polygonal cross section.

  In the present invention, the light-shielding protrusion may be a plate-like protrusion whose dimension in the first direction is longer than the dimension in the second direction.

  In the present invention, when the optical sensor is formed on the first substrate, the second substrate is a translucent substrate, and the target light is incident from the second substrate side, the second substrate In the substrate, a first light shielding layer is formed in a region overlapping between the pixel region and the photosensor, and the light shielding protrusion is formed in a region overlapping with the first light shielding layer in a plane. It is preferable. If comprised in this way, an image display area can be set with respect to a pixel area by the 1st light shielding layer. In this case, disturbance light incident on the first light shielding layer obliquely from the pixel region side may be reflected by the first light shielding layer and directed to the photosensor, but the disturbance light is blocked by the light shielding protrusion, It does not enter the optical sensor.

  In the present invention, the optical sensor is formed on the first substrate, the first substrate and the second substrate are translucent substrates, and the target light is incident from the second substrate side. In this case, it is preferable that a second light shielding layer is formed at least in a region overlapping with the photosensor on the side where the first substrate is located with respect to the photosensor. With this configuration, it is possible to prevent disturbance light from directly entering the optical sensor from the first substrate.

  In the present invention, it is preferable that a driving condition of the pixel region is adjusted based on a light detection result by the light sensor.

  In the case where the pixel region includes a light source device that emits light, it is preferable to control the amount of light emitted from the light source device based on the light detection result of the light sensor.

  The electro-optical device to which the present invention is applied can be used in electronic devices such as personal computers, mobile phones, and portable information terminals.

  The present invention will be described below with reference to the drawings. In the following embodiments, a light detection device according to the present invention is configured in a TFT active matrix driving type liquid crystal device which is a typical electro-optical device. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing.

[Embodiment 1]
(overall structure)
FIG. 1 is a block diagram showing an electrical configuration of an electro-optical device to which the present invention is applied. An electro-optical device 100 shown in FIG. 1 is a totally transmissive liquid crystal device, and includes a liquid crystal panel 100p, an image processing circuit 202, a timing generation circuit 203, a power supply circuit 201, a dimming circuit 500, and a backlight device 600 (light source device). Etc. The image processing circuit 202, the timing generation circuit 203, and the power supply circuit 201 are configured by an IC or the like mounted on the flexible substrate 108 (see FIGS. 2A and 2B) connected to the liquid crystal panel 100p. The light control circuit 500 and the backlight device 600 are configured outside the liquid crystal panel 100p.

  In the timing generation circuit 203, a dot clock for driving each pixel 100a of the liquid crystal panel 100p is generated, and based on the dot clock, clock signals VCK, HCK, inverted clock signals VCKB, HCKB, transfer start pulses HSP, VSP. Is generated. When input image data is input from the outside, the image processing circuit 202 generates an image signal based on the input image data and supplies it to the liquid crystal panel 100p. The power supply circuit 201 generates a plurality of power supplies VDD, VSS, VHH, and VLL and supplies them to the liquid crystal panel 100p.

  The liquid crystal panel 100p includes a pixel region 10b (pixel array region) in which a plurality of pixels 100a are arranged in a matrix in the central region. In the liquid crystal panel 100p, on the element substrate 10 described later, a plurality of data lines 6a and a plurality of scanning lines 3a extend vertically and horizontally inside the pixel region 10b, and the pixel 100a is located at a position corresponding to the intersection. Is configured. In each of the plurality of pixels 100a, a thin film transistor 30 as a pixel switching element and a pixel electrode 9a are formed. The data line 6 a is electrically connected to the source of the thin film transistor 30, the scanning line 3 a is electrically connected to the gate of the thin film transistor 30, and the pixel electrode 9 a is electrically connected to the drain of the thin film transistor 30.

  In the element substrate 10, a scanning line driving circuit 104 and a data line driving circuit 101 are configured outside the pixel region 10 b. The data line driving circuit 101 is electrically connected to the data line 6a and sequentially supplies image signals to the data lines 6a. The scanning line driving circuit 104 is electrically connected to the scanning line 3a, and sequentially supplies the scanning signal to each scanning line 3a.

  In each pixel 100a, the pixel electrode 9a is opposed to a common electrode formed on a counter substrate, which will be described later, via liquid crystal, and constitutes a liquid crystal capacitor 50a. Each pixel 100a is provided with a holding capacitor 60 in parallel with the liquid crystal capacitor 50a in order to prevent the image signal held in the liquid crystal capacitor 50a from leaking. In this embodiment, in order to form the storage capacitor 60, the capacitor line 3b is formed in parallel with the scanning line 3a, and the capacitor line 3b is connected to a common potential line (not shown) and has a predetermined potential. Is held in. The storage capacitor 60 may be formed between the preceding scanning line 3a.

  In the electro-optical device 100, the visibility of the display image depends on the brightness of the environment. For example, under natural daylight, it is necessary to set the light emission luminance of the backlight device 600 high and display a bright screen. On the other hand, in a dark environment at night, a clear image can be displayed even if the light emission luminance of the backlight device 600 is not as high as during the daytime. Therefore, it is desirable to adjust the light emission luminance of the backlight device 600 according to the illuminance of the ambient light. Therefore, the electro-optical device 100 according to the present embodiment includes a light detection device 300 including a light sensor 310 and a detection circuit 340. The light detection device 300 measures the illuminance of ambient light. In addition, the dimming circuit 500 controls the backlight device 600 to emit light with a luminance corresponding to the illuminance data obtained by the light detection device 300. A specific configuration of the light detection apparatus 300 will be described later. Note that the detection circuit 340 may be configured on the element substrate 10.

(Specific configuration of the liquid crystal panel 100p)
FIGS. 2A and 2B are a plan view of the liquid crystal panel 100p of the electro-optical device 100 to which the present invention is applied as viewed from the side of the counter substrate together with each component, and a cross-sectional view thereof taken along line HH ′. . As shown in FIGS. 2A and 2B, in the liquid crystal panel 100p of the electro-optical device 100, the element substrate 10 and the translucent counter substrate 20 made of glass or the like through a predetermined gap are provided. Is bonded by a sealing material 107 (a region with a slanting line in the lower right in FIG. 2A), and the sealing material 107 is disposed along the outer peripheral edge of the counter substrate 20. The sealing material 107 is an adhesive made of a photo-curing resin or a thermosetting resin. In a corner portion of the counter substrate 20 and the like, a vertical conductive material (not shown) is formed for electrical conduction between the element substrate 10 and the counter substrate 20.

  In the element substrate 10, a data line driving circuit 101 and a plurality of terminals 102 are formed along one side of the element substrate 10 in a region outside the inner peripheral edge of the sealing material 107, and along the side adjacent to this one side. A scanning line driving circuit 104 is formed. In addition, a flexible substrate 108 is connected to the element substrate 10 by a terminal 102. The element substrate 10 may include a protection circuit and an inspection circuit for protecting the pixel region 10b, the data line driving circuit 101, and the scanning line driving circuit 104 from static electricity, but the description thereof is omitted. .

  As will be described in detail later, pixel electrodes 9 a are formed in a matrix on the element substrate 10. On the other hand, the counter substrate 20 is formed with a frame-shaped light shielding layer 23b (a region with a diagonal line rising to the right in FIG. 2A) in the inner region of the sealant 107, and the inner side is the image display region. 10a. In the counter substrate 20, a light shielding layer 23 a called a black matrix or a black stripe is formed in a region facing the vertical and horizontal boundary regions of the pixel electrode 9 a of the element substrate 10, and an ITO film is formed on the upper layer side. The counter electrode 21 is formed. In the pixel area 10b, a dummy pixel may be formed in an area overlapping with the light shielding layer 23b. In this case, an area excluding the dummy pixel in the pixel area 10b is used as the image display area 10a. It will be. In this embodiment, since the photocurable adhesive is used as the sealing material 107, the light shielding layer 23b and the sealing material 107 are formed at positions shifted so that light irradiation from the counter substrate 20 side is possible. When the sealing material 107 is photocured by light irradiation from the 10 side, or when a thermosetting adhesive is used for the sealing material 107, the light shielding layer 23 b and the sealing material 107 are formed at overlapping positions. A configuration can also be adopted.

  A liquid crystal 50 as an electro-optical material is sealed in a space surrounded by the sealing material 107. The liquid crystal 50 takes a predetermined alignment state by the alignment films 16 and 22 (see FIG. 2B) formed on the element substrate 10 and the counter substrate in a state where an electric field from the pixel electrode 9a is not applied. The liquid crystal 50 is made of, for example, one or a mixture of several types of nematic liquid crystals.

  In the electro-optical device 100, a backlight device 600 is disposed on the back side of the element substrate 10, and light emitted from the backlight device 600 is incident on the liquid crystal panel 100p from the element substrate 10 side to face the counter substrate. The light is modulated while being emitted from the side 20, and is emitted as display light from the side of the counter substrate 20. As the backlight device 600, a surface light source device can be adopted, and a light source device using an LED element and a light guide plate can also be adopted.

  In the liquid crystal panel 100p, an optical sensor 310 is disposed at a position facing the data line driving circuit 101 with the image display region 10a interposed therebetween. In the present embodiment, the optical sensor 310 includes a light receiving element formed on the element substrate 10. A part of the light shielding layer 23b formed on the counter substrate 20 is notched, and the optical sensor 310 is formed in a region of the element substrate 10 that overlaps the notch 23c of the light shielding layer 23b.

  The electro-optical device 100 formed in this way can be used as a color display device for electronic devices such as a mobile computer, a mobile phone, and a liquid crystal television described later. In this case, a color filter (not shown) is provided on the counter substrate 20. ) And a protective film are formed. Further, on the light incident side surface or the light emitting side of the counter substrate 20 and the element substrate 10, the type of the liquid crystal 50 to be used, that is, an operation mode such as a TN (twisted nematic) mode, an STN (super TN) mode, Depending on the normally white mode / normally black mode, a polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction. The electro-optical device 100 is not limited to a transmissive type, and may be configured as a transflective type.

(Configuration of each pixel)
3A and 3B are plan views of adjacent pixels in the element substrate 10 used in the electro-optical device 100 to which the present invention is applied, and electro-optics at positions corresponding to the AA ′ line. It is sectional drawing when the apparatus 100 is cut | disconnected.

  As shown in FIGS. 3A and 3B, the element substrate 10 is provided with a base protective film 12 made of a silicon oxide film or the like on the surface of a light-transmitting substrate 10d made of glass or the like. On the surface side, an N-channel thin film transistor 30 is formed at a position adjacent to the pixel electrode 9a. The thin film transistor 30 has a twin gate structure. The island-shaped semiconductor film 1a includes a high concentration source region 1d, a channel formation region 1b, a high concentration N type region 1g, a channel from the source side to the drain side. The formation region 1c and the high concentration drain region 1e are arranged in this order. A gate insulating film 2 made of a silicon oxide film or the like is formed above the semiconductor film 1a, and a scanning line 3a is formed above the gate insulating film 2. A part of the scanning line 3a is opposed to the channel formation regions 1b and 1c through the gate insulating film 2 as a gate electrode.

The semiconductor film 1a is a polysilicon film that is polycrystallized by laser annealing, lamp annealing, or the like after an amorphous silicon film is formed on the translucent substrate 10d. The high-concentration source region 1d, the high-concentration N-type region 1g, and the high-concentration drain region 1e are about 0.1 × 10 ¹⁵ / cm ² to about 10 × 10 ¹⁵ / cm ^{2 using the} scanning line 3a (gate electrode) as a mask. This is a semiconductor region formed by introducing high-concentration N-type impurities (such as phosphorus ions) at a dose of.

  On the upper layer side of the thin film transistor 30, interlayer insulating films 7 and 8 are formed. A data line 6a and a drain electrode 6b are formed on the surface of the interlayer insulating film 7. The data line 6a is electrically connected to the high concentration source region 1d through a contact hole 7a formed in the interlayer insulating film 7. Yes. A pixel electrode 9 a made of an ITO film is formed on the surface of the interlayer insulating film 8. The pixel electrode 9 a is electrically connected to the drain electrode 6 b through the contact hole 8 a formed in the interlayer insulating film 8, and the drain electrode 6 b is connected to the contact hole formed in the interlayer insulating film 7 and the gate insulating film 2. 7b is electrically connected to the high concentration drain region 1e. An alignment film 16 made of a polyimide film is formed on the surface side of the pixel electrode 9a. For the extended portion 1f (lower electrode) from the high-concentration drain region 1e, the capacitive line 3b in the same layer as the scanning line 3a is provided via an insulating film (dielectric film) formed simultaneously with the gate insulating film 2. Are opposed to each other as an upper electrode, thereby forming a storage capacitor 60. In this embodiment, the scanning line 3a and the capacitor line 3b are formed of a single layer film or a laminated film such as a molybdenum film, an aluminum film, a titanium film, a tungsten film, or a tantalum film. The data line 6a and the drain electrode 6b are also formed of a single layer film or a laminated film such as a molybdenum film, an aluminum film, a titanium film, a tungsten film, or a tantalum film.

  In the element substrate 10, a first columnar spacer 4a (first columnar spacer) is formed in a region of the pixel 100a that does not substantially contribute to display. In this embodiment, the first columnar spacer 4a is formed at a position overlapping the capacitor line 3b in the upper layer of the pixel electrode 9a. Such a first columnar spacer 4a is formed in each of the plurality of pixels 100a. The first columnar spacer 4a protrudes from the element substrate 10 and has its upper end abutting against the counter substrate 20, whereby the element substrate 10 and the counter substrate 20 are separated from each other. The gap dimension (layer thickness of the liquid crystal 50) is defined. Such first columnar spacers 4a are formed by applying, exposing, and developing a resin having translucency, photosensitivity, and insulation, for example, an acrylic resin.

(Configuration of drive circuit)
Referring again to FIG. 2A, in the electro-optical device 100 of the present embodiment, the data line driving circuit 101, the scanning line driving circuit 104, and the like inside the surface side of the element substrate 10 using the peripheral region of the pixel region 10b. A circuit is formed. In configuring such a shift register of the data line driving circuit 101 and the scanning line driving circuit 104, a complementary thin film transistor including an N-channel thin film transistor and a P-channel thin film transistor is used, although illustration is omitted. It is done.

(Configuration of optical sensor and its peripheral parts)
FIGS. 4A and 4B are a plan view of the optical sensor used in the electro-optical device to which the present invention is applied and its vicinity, and a cross-sectional view taken along the line BB ′. FIG. A thin film transistor 30 is also shown.

  As shown in FIGS. 4A and 4B, in the element substrate 10 (first substrate) of the present embodiment, a photosensor 310 is formed in the outer region of the pixel region 10b, and a plurality of photosensors 310 are provided. The light receiving elements are electrically connected in parallel by wiring. In this embodiment, the optical sensor 310 is composed of a PIN junction type diode in which a high-concentration N-type region 1x, an intrinsic region 1y, and a high-concentration P-type region 1z are arranged in this order on the semiconductor film 1w, and is formed on the interlayer insulating film 7 The wirings 6h and 6i are electrically connected to the high concentration N-type region 1x and the high concentration P-type region 1z through contact holes 7h and 7i, respectively.

The semiconductor film 1w is a polysilicon film formed simultaneously with the semiconductor film 1a constituting the thin film transistor 30. The high-concentration N-type region 1x is formed from about 0.1 × 10 ¹⁵ / cm ² to about 10 × 10 ¹⁵ / cm ² using a resist mask when forming the high-concentration N-type regions of the thin film transistor 30 and the complementary thin film transistor. This is a semiconductor region formed by introducing a high concentration N-type impurity (such as phosphorus ion) at a dose of 1%, and the high concentration P-type region 1z is a resist when forming a high-concentration P-type region of a complementary thin film transistor. A semiconductor region formed by introducing high-concentration P-type impurities (such as boron ions) at a dose of about 0.1 × 10 ¹⁵ / cm ² to about 10 × 10 ¹⁵ / cm ² using a mask. is there. The wirings 6h and 6i are metal films formed simultaneously with the data lines 6a and the drain electrodes 6b, and are made of a single layer film or a laminated film such as a molybdenum film, an aluminum film, a titanium film, a tungsten film, or a tantalum film.

  The thus configured optical sensor 310 overlaps the notch 23c of the light shielding layer 23b (first light shielding layer) formed on the counter substrate 20 (second substrate), and is incident from the counter substrate 20 side. The incoming external light (target light / ambient light / indicated by arrow P) can be detected. The light shielding layer 23b is made of a chromium film, a metal film such as titanium, a titanium nitride film, or the like formed simultaneously with the light shielding layer 23a constituting the black matrix. Here, the light shielding layer 23 b is also formed in a region overlapping between the pixel region 10 b and the optical sensor 310.

  A chrome film, titanium, or the like is disposed on the side where the translucent substrate 10d is located with respect to the semiconductor film 1w, for example, between the translucent substrate 10d and the base protective film 12 so as to overlap the region including the optical sensor 310 A light shielding layer 11a (second light shielding layer) made of a metal film or a titanium nitride film is formed. For this reason, the light from the backlight device 600 does not directly enter the intrinsic region 1y. Such a light shielding layer 11a may be formed on the surface of the light-transmitting substrate 10d by using a photolithography technique before the base protective film 12 is formed. In this embodiment, the light shielding layer 11a is formed over a wide area, and is formed up to an area overlapping with a second columnar spacer 4b described later.

  In this embodiment, a plurality of first columnar spacers 4a are formed in the pixel region 10b of the element substrate 10, and the counter substrate 20 protrudes from the element substrate 10 between the photosensor 310 and the pixel region 10b. A plurality of second columnar spacers 4b that are in contact with each other are formed. Such a second columnar spacer 4b is formed at the same time as the first columnar spacer 4a, and is formed by applying, exposing, and developing an acrylic resin or the like.

  Here, in the plurality of second columnar spacers 4b, the dimension Lx in the first direction X along the end of the pixel region 10b is substantially the same as the dimension Ly in the second direction Y orthogonal to the first direction X. However, when arranged as follows, it functions as a light-shielding projection that blocks light traveling from the pixel region 10b toward the photosensor 310.

  In this embodiment, the plurality of second columnar spacers 4b (light-shielding protrusions) are arranged in the first direction X along the end of the pixel region 10b to form the protrusion rows 41 and 42. The protrusion rows 41 and 42 are juxtaposed in the second direction Y from the pixel region 10b toward the optical sensor 310.

  Further, when the protrusion rows 41 and 42 are viewed from the second direction Y, the second columnar spacer 4b included in the other protrusion row 42 is provided between the second columnar spacers 4b included in the one protrusion row 41. It is blocked. Specifically, in the projection row 41, the second columnar spacers 4b are arranged at a predetermined interval, and the interval is larger than the dimension Lz in the first direction X of the second columnar spacer 4b. The second columnar spacer 4 b that is narrow and included in the protrusion row 42 is disposed between the second columnar spacers 4 b included in the protrusion row 41. On the contrary, in the projection row 42, the second columnar spacers 4b are arranged with a predetermined interval, but the interval is narrower than the dimension Lz in the first direction X of the second columnar spacer 4b, In addition, the second columnar spacer 4 b included in the protrusion row 41 is disposed between the second columnar spacers 4 b included in the protrusion row 42.

(Main effects of this form)
As described above, in the electro-optical device 100 according to this embodiment, the optical sensor 310 is formed in the element substrate 10 in the outer region of the pixel region 10b, and the optical sensor 310 is external light incident from the counter substrate 20 side. Is detected. Therefore, the detection circuit 340 outputs the illuminance data to the dimming device 500, and the dimming device 500 controls the backlight device 600 to emit light under conditions according to external light.

  Here, since display is performed in the image display area 10a in the pixel area 10b, light may leak from the pixel area 10b side to the optical sensor 310. For example. Of the light emitted from the backlight device 600, light emitted in an oblique direction overlaps between the pixel region 10b and the photosensor 310 in the light shielding layer 23b of the counter substrate 20, as indicated by an arrow Q. In some cases, the light is reflected from the portion and travels toward the optical sensor 310. Even in such a case, in this embodiment, the second columnar spacer 4b functioning as a light-shielding protrusion is formed between the optical sensor 310 and the pixel region 10b in the element substrate 10, and the second columnar spacer is formed. Light obliquely incident on the side surface of 4b is reflected, absorbed or scattered. Therefore, disturbance light traveling from the pixel region 10b side toward the optical sensor 310 can be blocked. Therefore, since disturbance light can be prevented from entering the optical sensor 310, the sensitivity of the optical sensor 310 can be increased.

  The second columnar spacer 4b is made of a photosensitive resin formed simultaneously with the first columnar spacer 4a that defines the gap size (layer thickness of the liquid crystal 50) between the element substrate 10 and the counter substrate 20 in the pixel region 10b. Become. For this reason, since the 2nd columnar spacer 4b is formed using the process of forming the 1st columnar spacer 4a, even when forming the 2nd columnar spacer 4b, it is not necessary to add a new process.

  Further, in the present embodiment, on the side where the translucent substrate 10d is positioned with respect to the semiconductor film 1w, the light shielding layer is provided between the translucent substrate 10d and the base protective film 12 so as to overlap the region including the photosensor 310. Since 11a is formed, the light from the backlight device 600 does not directly enter the intrinsic region 1y. Therefore, the sensitivity of the optical sensor 310 is high.

[Modification of Embodiment 1]
In the first embodiment, the second columnar spacer 4b is a round bar-like protrusion, but the cross section may be a square bar-like protrusion such as a regular square, a regular hexagon, or a regular octagon.

[Embodiment 2]
FIG. 5 is a plan view of an optical sensor used in the electro-optical device according to Embodiment 2 of the present invention and the vicinity thereof. Since the basic configuration of this embodiment is the same as that of Embodiment 1, common portions are denoted by the same reference numerals and description thereof is omitted. In addition, since the CC ′ cross section of the present embodiment is represented as shown in FIG. 4B, refer to FIG. 4B for the cross section of the photosensor of this embodiment.

  As shown in FIGS. 4B and 5, in this embodiment as well, in the same manner as in the first embodiment, the optical sensor 310 is formed in the outer region of the pixel region 10b in the element substrate 10 (first substrate). In this embodiment, the optical sensor 310 has a structure in which a plurality of light receiving elements are electrically connected in parallel by wiring. In this embodiment, the optical sensor 310 is composed of a PIN junction type diode in which a high-concentration N-type region 1x, an intrinsic region 1y, and a high-concentration P-type region 1z are arranged in this order on a semiconductor film 1w made of a polysilicon film. Wirings 6h and 6i formed in the upper layer are electrically connected to high concentration N-type region 1x and high concentration P-type region 1z through contact holes 7h and 7i, respectively. In this embodiment as well, as described with reference to FIG. 4B, the optical sensor 310 is formed by cutting the light shielding layer 23b (first light shielding layer) formed on the counter substrate 20 (second substrate). It overlaps with the notch 23c and can detect external light (indicated by target light / environment light / arrow P) incident from the counter substrate 20 side. Here, the light shielding layer 23b is also formed in a region overlapping between the pixel region 10b and the optical sensor 310. Further, a light shielding layer 11a (second film) made of a metal film such as a chromium film or titanium, a titanium nitride film, or the like so as to overlap an area including the optical sensor 310 between the light-transmitting substrate 10d and the base protective film 12. The light shielding layer is formed.

  Further, in the present embodiment, as in the first embodiment, a plurality of first columnar spacers 4a are formed in the pixel region 10b in the element substrate 10, and between the photosensor 310 and the pixel region 10b, A plurality of second columnar spacers 4 c protruding from the element substrate 10 and contacting the counter substrate 20 are formed. Such a second columnar spacer 4c is formed at the same time as the first columnar spacer 4a, and is formed by applying, exposing, and developing an acrylic resin or the like.

  Here, the plurality of second columnar spacers 4c are plates in which the dimension Lx in the first direction X along the end of the pixel region 10b is longer than the dimension Ly in the second direction Y orthogonal to the first direction X. The projections are arranged as follows, and function as light-shielding projections that block light traveling from the pixel region 10b toward the optical sensor 310.

  In the present embodiment, the plurality of second columnar spacers 4c (light-shielding protrusions) are arranged in the first direction X along the end of the pixel region 10b to form the protrusion rows 41 and 42, and these The protrusion rows 41 and 42 are juxtaposed in the second direction Y from the pixel region 10b toward the optical sensor 310.

  Further, when the projection rows 41 and 42 are viewed from the second direction Y, the second columnar spacer 4c included in the projection row 42 is closed between the second columnar spacers 4c included in the projection row 41. Yes. Specifically, in the projection row 41, the second columnar spacers 4c are arranged at a predetermined interval, and the interval is larger than the dimension Lz in the first direction X of the second columnar spacer 4c. The second columnar spacer 4 c that is narrow and included in the protrusion row 42 is disposed between the second columnar spacers 4 c included in the protrusion row 41.

  As described above, also in the electro-optical device 100 according to the present embodiment, the optical sensor 310 is formed in the outer region of the pixel region 10b in the element substrate 10 as in the first embodiment. External light incident from the 20 side is detected. Here, since display is performed in the image display area 10a in the pixel area 10b, there is a possibility that light leaks to the optical sensor 310 from the pixel area 10b side. Since the second columnar spacer 4c functioning as a light shielding protrusion is formed between the sensor 310 and the pixel region 10b, disturbance light traveling from the pixel region 10b side toward the optical sensor 310 may be blocked. The same effects as in the first embodiment can be obtained.

[Application examples to other electro-optical devices]
In the above embodiment, the case where the optical sensor 310 is a PIN junction type diode has been described. However, a MOS type diode in which an N-type thin film transistor is diode-connected or a MOS type diode in which a P-type thin film transistor is diode-connected is used as the optical sensor 310. In some cases, the present invention may be suitable. Further, when performing light detection using the optical sensor 310, the optical sensor 310 constituting the main sensor is disposed in the region overlapping the notch 23c of the light shielding layer 23b, while the sub sensor is configured in the region overlapping the light shielding layer 23b. The light sensor 310 may be arranged, and the intensity of external light may be obtained from the difference between the detection results. For example, a sensor circuit is configured by electrically connecting a main sensor and a sub sensor in series via a node, and external light is generated based on a current or voltage extracted from the node when a voltage is applied to both ends of the sensor circuit. May be detected.

  In the above embodiment, the first columnar spacer 4a and the second columnar spacers 4b and 4c are projected from the element substrate 10 side, but may be projected from the counter substrate 20 side.

  Moreover, in the said form, when manufacturing the 1st columnar spacer 4a, although the 2nd columnar spacer 4b and 4c were formed simultaneously, the 1st columnar spacer 4a and the 2nd columnar spacer 4b and 4c are another process. Alternatively, a configuration in which only the second columnar spacers 4b and 4c are formed without forming the first columnar spacer 4a may be employed.

[Example of mounting on electronic devices]
Next, an electronic apparatus to which the electro-optical device 100 according to the above-described embodiment is applied will be described. FIG. 6A illustrates a configuration of a mobile personal computer including the electro-optical device 100. The personal computer 2000 includes an electro-optical device 100 as a display unit and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002. FIG. 6B shows a configuration of a mobile phone provided with the electro-optical device 100. A cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and the electro-optical device 100 as a display unit. By operating the scroll button 3002, the screen displayed on the electro-optical device 100 is scrolled. FIG. 6C shows the configuration of a personal digital assistant (PDA) to which the electro-optical device 100 is applied. The information portable terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and the electro-optical device 100 as a display unit. When the power switch 4002 is operated, various types of information such as an address book and a schedule book are displayed on the electro-optical device 100.

  As an electronic apparatus to which the electro-optical device 100 is applied, in addition to those shown in FIG. 6, a digital still camera, a liquid crystal television, a viewfinder type, a monitor direct-view type video tape recorder, a car navigation device, a pager, an electronic notebook, Examples include calculators, word processors, workstations, videophones, POS terminals, devices with touch panels, and the like. The electro-optical device 100 described above can be applied as a display unit of these various electronic devices.

1 is a block diagram illustrating an electrical configuration of an electro-optical device to which the present invention is applied. (A), (b) is the top view which looked at the liquid crystal panel of the electro-optical apparatus to which this invention was applied from the opposing board | substrate side with each component, and its HH 'sectional drawing. (A), (b) is a plan view of adjacent pixels in the element substrate 10 used in the electro-optical device to which the present invention is applied, and the electro-optical device is cut at a position corresponding to the line AA ′. It is sectional drawing when doing. (A), (b) is the top view of the optical sensor used for the electro-optical apparatus based on Embodiment 1 of this invention, its vicinity, and its BB 'sectional drawing, respectively. FIG. 6 is a plan view of an optical sensor used in an electro-optical device according to Embodiment 2 of the present invention and its vicinity. It is explanatory drawing of the electronic device provided with the electro-optical apparatus to which this invention is applied.

Explanation of symbols

1w..Semiconductor film of optical sensor, 1x..High-concentration N-type region of optical sensor, 1y..Intrinsic region of optical sensor, 1z..High-concentration P-type region of optical sensor, 4a..First columnar spacer 4b, 4c... Second columnar spacer (light-shielding projection), 10.. Element substrate (first substrate), 10 a... Image display area, 10 b... Pixel area, 11 a. Layer (second light shielding layer), 20 .. counter substrate (second substrate), 23 b .. light shielding layer on the opposite substrate side (first light shielding layer), 30... Thin film transistor for pixel switching, 100. Electro-optical device, 100p ... Liquid crystal panel, 300 Photo detector, 310 Photo sensor circuit, 600 Back light device

Claims (9)

In an electro-optical device that includes a panel in which a first substrate and a second substrate are bonded to each other with a predetermined gap, and the panel includes a pixel region in which a plurality of pixels are arranged.
An optical sensor for detecting incident target light is formed in an outer region of the pixel region of at least one of the first substrate and the second substrate,
One of the first substrate and the second substrate is provided with a light-shielding protrusion protruding from the one substrate in a region between the photosensor and the pixel region. Electro-optical device characterized. The one substrate is formed with a plurality of columnar spacers protruding from the one substrate and protruding toward the other substrate,
The plurality of columnar spacers include a plurality of first columnar spacers that abut against the other substrate in the pixel region to define the size of the gap, and the light shielding between the photosensor and the pixel region. The electro-optical device according to claim 1, further comprising: a second columnar spacer formed as a projection for use. The light-shielding protrusions are arranged in a first direction along the edge of the pixel region to form a protrusion row,
The protrusion rows are provided in a plurality of rows in a second direction orthogonal to the first direction,
When two adjacent protrusion rows in the plurality of protrusion rows are viewed from the second direction, a gap between the light shielding protrusions included in one protrusion row is caused by the light shielding protrusion included in the other protrusion row. The electro-optical device according to claim 1, wherein the electro-optical device is closed.   The electro-optical device according to claim 3, wherein the light-shielding protrusion is a rod-shaped protrusion having the same dimension in the first direction and the dimension in the second direction.   The electro-optical device according to claim 3, wherein the light-shielding protrusion is a plate-like protrusion whose dimension in the first direction is longer than the dimension in the second direction. The photosensor is formed on the first substrate;
The second substrate is a translucent substrate, and the target light enters from the second substrate side,
A first light-shielding layer is formed in a region of the second substrate that overlaps between the pixel region and the photosensor;
The electro-optical device according to claim 1, wherein the light-shielding protrusion is formed in a region overlapping the first light-shielding layer in a planar manner. The photosensor is formed on the first substrate;
The first substrate and the second substrate are translucent substrates, and the target light is incident from the second substrate side,
The second light-shielding layer is formed at least in a region overlapping with the photosensor on the side where the first substrate is located with respect to the photosensor. The electro-optical device according to Item.   The electro-optical device according to claim 1, wherein a driving condition of the pixel region is adjusted based on a light detection result by the optical sensor. A light source device for emitting light to the pixel region;
The electro-optical device according to claim 1, wherein an emitted light amount in the light source device is controlled based on a light detection result by the optical sensor.

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