JP2008184624A - Sputter method and sputter device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sputter method and a sputter device which can perform low-temperature and low-damage film formation with a simple configuration and with a high productivity even if a plurality of substrates are continuously subjected to film formation treatment. <P>SOLUTION: The sputter method and sputter device are characterized in that low-temperature and low-damage film formation is performed in the first film formation part P1 of the first film formation region F1, so as to form an initial layer of film with a prescribed thickness on a substrate B, thereafter, the substrate B is moved to the second film formation part P2 of the second film formation region F2, and subsequently, film formation is performed at a high film formation rate, so as to form a second layer of film, thus a thin film is formed. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a sputtering method and a sputtering apparatus used for producing a thin film on a substrate, and in particular, on an organic EL element / organic thin film (such as an organic semiconductor) that requires low temperature / low damage film formation, Alternatively, the present invention relates to a sputtering method and a sputtering apparatus for manufacturing a high-functional thin film of a metal, an alloy, and a compound on a film in which a substrate is a polymer material or a resin substrate. Specific application fields include the production of transparent conductive films, electrode films, protective films / sealing films (gas barrier films) for organic EL (organic electroluminescence) elements, and electrode films on organic thin film semiconductors, protection A film is prepared. Further, the present invention can also be used in a sputtering method and a sputtering apparatus for producing a thin film on a polymer film, a resin substrate, and a general-purpose thin film production field.

  A metal film as an electrode, a transparent conductive thin film, a protective film, a sealing film, etc. on a substrate (film formation target) that is easily damaged when forming an organic EL element or organic thin film (organic semiconductor, etc.) In order to prevent the characteristics of the substrate from being deteriorated due to damage during the film formation or the life as a product is shortened, the organic thin film or the like is placed on the substrate and the substrate. Low temperature and low damage film formation with little damage at the film interface with the thin film to be formed is required.

  Therefore, a pair of targets are placed in parallel as a film deposition system capable of low-temperature, low-damage deposition, and a magnetic field space between the targets is generated between the pair of targets so that the magnetic field lines are directed from one target to the other. Then, a counter target type sputtering apparatus that performs sputtering by placing a substrate at a lateral position between the pair of targets has been used.

  In the facing target type sputtering apparatus, since the performance of confining charged particles such as plasma and secondary electrons between the targets is good, low temperature and low damage film formation is possible. However, since the sputtering surface of each target faces in a direction orthogonal to the film formation surface of the substrate, the amount of sputtered particles reaching the substrate is small and the film formation rate is slow. For this reason, it has been difficult to obtain a sufficient production (film formation) speed in response to a demand for productivity improvement required in recent years.

  Therefore, the target is placed so that its sputtering surface is parallel to the film-forming surface of the substrate, and the magnetic field lines are curved in such a manner that the outer peripheral portion and the central portion of the target are connected in an arc shape on the sputtering surface side of the target. It is conceivable to perform film formation at a high film formation speed using a parallel plate magnetron sputtering apparatus that generates a magnetic field space and performs sputtering. However, in the parallel plate type magnetron sputtering apparatus, the sputter surface is arranged so as to face the substrate, so that the amount of sputtered particles reaching the substrate is large and the film formation rate is high, but the plasma is not applied to the substrate. The influence and the flying of charged particles such as secondary electrons increase, and low temperature and low damage film formation cannot be performed.

  As described above, in the film formation by sputtering, it is very difficult to achieve the productivity improvement and the low temperature / low damage film formation at the same time.

  For this reason, a V-type opposed target sputtering apparatus has been developed in which the opposed surfaces of a pair of targets of the opposed target sputtering apparatus are each inclined toward the substrate side (see Patent Document 1). According to such a sputtering apparatus, since it is an opposed target type sputtering apparatus, the performance of confining charged particles such as plasma and secondary electrons between the targets is good, and the sputtering surface of the target and the deposition surface of the substrate are formed. Since the angle is smaller than the right angle, that is, the sputter surface is directed more toward the substrate, the amount of sputtered particles that reach (fly) the substrate is increased, and the deposition rate is improved.

  However, since the sputtering surface faces more toward the substrate, the influence of the plasma on the substrate and the amount of charged particles such as secondary electrons that fly will increase compared to a counter target type sputtering apparatus in which a pair of targets are parallel. Therefore, in the above-described film formation on a substrate that requires extremely low temperature and low damage film formation, such as an organic EL element or an organic thin film (such as an organic semiconductor), the characteristics of the substrate are affected by the damage during film formation. Problems such as deterioration and shortened product life could not be solved sufficiently.

On the other hand, in sputtering using a magnetron-type cathode, a sputtering apparatus in which an RF coil that captures charged particles such as negative ions and secondary electrons is arranged on the front surface of a target is used to form a film on an object to be deposited by sputtering. At this time, the pressure in the vacuum vessel (chamber) in which sputtering is performed is lowered (1.33 × 10 ⁻² Pa or less), and the plasma density on the target surface is lowered. By doing so, charged particles such as negative ions and secondary electrons incident on the substrate side when the film interface between the film formation surface of the substrate and the thin film to be formed are formed are reduced, and the temperature is low. Damage film formation is possible. By utilizing this, an initial layer (first layer) is formed on the film formation surface at the initial stage of film formation on the substrate that requires the low temperature and low damage film formation. Since the deposition rate is low and the productivity is extremely poor under this sputtering condition, the sputtering gas flow rate introduced into the vacuum vessel is increased after the initial layer deposition, and the pressure in the vacuum vessel is increased (6.65). × 10 ^-1 Pa or more), to increase the sputtering amount to increase the plasma density on the target surface, the sputtering method for forming is provided a second layer by increasing the deposition rate (see Patent Document 2). Note that the first layer (initial layer) and the second layer are only described by imaginary planes with different film forming speeds in the thin film thickness direction. Are not separated into layers, but are continuous. The film interface refers to a boundary surface where the film formation surface and the thin film are in contact with each other.

  According to such a film forming method, an initial layer having a sufficient thickness is formed on the film formation surface of a substrate such as an organic EL element that requires low temperature / low damage film formation by the low temperature / low damage film formation under the low pressure. The initial layer is formed when the second layer having a high deposition rate is formed, and charged particles such as secondary electrons emitted from the target that increase with the amount of sputtering and the plasma density increase. The influence on the substrate can be prevented.

  Therefore, it is possible to perform low-temperature / low-damage film formation on a substrate that requires the low-temperature / low-damage film formation, and the second layer is formed compared to the case where the low-temperature / low-damage film formation is performed until the end of the film formation. By increasing the film forming speed when forming the film, the film forming speed in the entire film forming process (process for forming the first layer and the second layer) is increased (the film forming time is shortened), Productivity was improved.

JP 2004-285445 A JP 2005-340225 A

  However, according to the above sputtering method, when the first layer and the second layer are formed, the pressure in the vacuum vessel is different, so that after the first layer is formed and before the second layer is formed, The pressure in the vacuum chamber must be changed (higher).

  The pressure in the vacuum vessel is changed by changing the flow rate of the sputtering gas (for example, argon gas) introduced into the vacuum vessel, but the inside of the vacuum vessel is stabilized at a predetermined pressure. A predetermined time is required until the sputtering after the change is performed.

  Therefore, according to the above sputtering method, the rate of increase in the film formation rate when forming the second layer by changing the pressure in the vacuum vessel is low, and a predetermined time is required for changing the pressure in the vacuum vessel. Therefore, the time required for the entire film formation process from the start of film formation until the required film thickness is obtained cannot be shortened much compared to the case where the low temperature and low damage film formation is performed at a low film formation speed. . Specifically, the power (input power) input to the cathode for sputtering is the same, and the flow rate of sputtering gas flowing into the vacuum vessel is increased to increase the pressure in the vacuum vessel during film formation. The improvement of the film formation rate in the entire film process can be expected only from several% to 10%. In recent years, further improvement in productivity has been demanded by further shortening the time of the entire film formation process.

  Further, according to the sputtering method, an RF coil must be disposed in front of the target in order to capture charged particles such as secondary electrons and negative ions incident on the substrate, and the RF coil is driven. Therefore, it is necessary to separately arrange an RF power source for controlling the RF coil and the RF power source. Therefore, a sputtering apparatus for performing the sputtering method has a complicated configuration.

  Furthermore, according to the above sputtering method, when a plurality of substrates are continuously formed, the first layer is first formed on the first substrate, and then the pressure in the vacuum vessel is changed (higher). Then, the second layer is formed. Then, in order to form a film on the next substrate, the pressure in the vacuum vessel is again returned to the pressure for forming the first layer, and then the second layer is formed. The film is formed by changing (higher) the pressure. By repeating this process, a plurality of substrates can be continuously formed.

  As described above, according to the sputtering method, in order to continuously form a plurality of substrates, the pressure in the vacuum vessel must be changed one after another, and only the time necessary for changing the pressure is required. However, a considerable amount of time is required, and the entire film formation process takes too much time in terms of productivity.

  Therefore, in view of the above problems, the present invention is capable of low-temperature and low-damage film formation with a simple configuration, and has high productivity even when a plurality of substrates are continuously formed. It is an object to provide a sputtering method and a sputtering apparatus.

Therefore, in order to solve the above-described problems, the sputtering method according to the present invention has an internal space in which the first film formation region for disposing the first film formation unit and the second film formation unit for disposing the second film formation unit. The first film forming unit and the second film forming unit for forming a film on an object to be formed are juxtaposed in a vacuum container composed of two film forming regions. After the film formation on the film target, the second film formation target is formed on the second film formation unit from the first film formation position where the film formation target is formed on the first film formation unit. A sputtering method of moving the deposition target to a film position and further depositing a film on the deposition target in a second deposition unit, wherein the first deposition unit includes a pair of first targets The first surfaces are arranged so that the surfaces face each other at an interval and the surfaces are inclined toward the first film formation position located on the side between the first targets. An inwardly curved magnetic field space is generated on the surface side of the target so that the magnetic lines of force are arcuate from the outer peripheral portion toward the central portion, and the magnetic force lines are generated from the central portion to the outer peripheral portion on the surface side of the other first target. An outwardly curved magnetic field space that is arcuate toward the first target, and further, a first inter-target space formed between the first targets and having a magnetic field line extending from the periphery of one of the first targets to the periphery of the other first target. A cylindrical auxiliary magnetic field space having a magnetic field strength greater than that of the bending magnetic field is generated and sputtered, and a film is formed on the film formation target with the sputtered first sputtered particles. Sputtering by generating the inward or outward curved magnetic field space on the surface side of the two targets, and the first film forming unit with the sputtered second sputtered particles Characterized by forming a film on the deposition target object at a faster than definitive deposition rate deposition rate,
In the sputtering apparatus according to the present invention, the internal space includes a first film formation region for disposing the first film formation unit and a second film formation region for disposing the second film formation unit. In the vacuum container, a first film formation unit and a second film formation unit for forming a film on the film formation target are arranged in parallel, and a substrate holder for holding the film formation target is provided in the first container The inside of the vacuum container is formed from the first film formation position where the film formation target object is formed in the first film formation part to the second film formation position where the film formation target object is formed in the second film formation part. A sputtering apparatus that is movably provided in a state where a film object is held, wherein the first film forming unit includes a first target and a curved magnetic field space in which lines of magnetic force are arcuate on the surface of the first target. Each has a bending magnetic field generating means for generating and a cylindrical auxiliary magnetic field generating means provided so as to surround the first target. A pair of first composite cathodes, wherein the pair of first composite cathodes includes first targets whose surfaces are opposed to each other with a space therebetween, and the surfaces are located laterally between the first targets. The first magnetic field generating means of the pair of first composite cathodes is arranged so as to be inclined toward one film forming position, and the polarity is set so that the magnetic field lines are directed from the outer peripheral portion of the first target toward the central portion. An inward bending magnetic field generation means, and the other bending magnetic field generation means is an outward bending magnetic field generation means in which the polarity is set so that the magnetic lines of force are directed from the central portion of the first target toward the outer peripheral portion. The means is such that the magnetic field lines are directed from the periphery of one of the first targets to the periphery of the other first target and surround the first inter-target space formed between the first targets and are more magnetic than the curved magnetic field space. An inward or outward curved magnetic field generating means for generating a cylindrical auxiliary magnetic field space having a high strength, wherein the second film forming unit generates the inward or outward curved magnetic field space on the surface side of the second target and the second target. And a sputter cathode capable of scattering sputtered particles toward the second film forming position and having a film forming speed higher than that of the first film forming part.

  According to such a configuration, in the first film forming unit of the first film forming region, the cylindrical auxiliary magnetic field space is provided by the cylindrical auxiliary magnetic field generating unit provided around each first target of the pair of first targets, A cylindrical auxiliary magnetic field space that surrounds the first inter-target space formed between the first targets and has a magnetic field strength larger than the curved magnetic field space so that the magnetic field lines are directed from the periphery of one first target to the periphery of the other first target. Formed (generated).

  As described above, the cylindrical auxiliary magnetic field generating means is separately provided around the curved magnetic field generating means (first target), and the cylindrical auxiliary magnetic field space is formed so as to surround the first inter-target space. A space having a large magnetic field strength can be formed between the first inter-target space and the substrate without shortening (decreasing) the distance between the centers of the first targets. Therefore, in the first film formation unit, the confinement effect of plasma between the first targets (first composite cathode) and the first target of charged particles such as secondary electrons (without slowing down the film formation rate) The confinement effect between the first composite type cathode) is improved.

  That is, since the curved magnetic field space formed on the first target surface is surrounded (enclosed) by the cylindrical auxiliary magnetic field space, even if the plasma protrudes from the curved magnetic field space, it is confined by the cylindrical auxiliary magnetic field space (substrate) And the influence of the plasma on the substrate side can be suppressed.

  Further, in the first film forming unit, charged particles such as secondary electrons that jump out (fly) from the curved magnetic field space to the substrate side are also surrounded by the cylindrical auxiliary magnetic field space. The effect of confining charged particles in the space between the first targets is increased. That is, jumping out of the charged particles to the substrate side is reduced.

  Furthermore, since the first composite type cathode is a magnetron type cathode (magnetron cathode) provided with a cylindrical auxiliary magnetic field generating means, even if the current value to be supplied to the cathode is increased, the first composite type cathode is like the opposed target type cathode. A phenomenon in which plasma concentrates in the central portion appears and discharge does not become unstable, and plasma formed in the vicinity of the target surface can be stably discharged for a long time.

  Therefore, in the first film forming unit, the influence of the plasma on the substrate that is the film formation target and the two flying from the sputtering surface are stable for a long time without shortening the distance between the centers of the pair of first targets. The influence (damage) caused by charged particles such as secondary electrons can be extremely reduced, and as a result, low-temperature and low-damage film formation can be performed on the substrate. In other words, it is possible to form a film even on a substrate that requires low temperature and low damage film formation.

  Therefore, by sputtering in the first film forming unit as described above, a low-temperature and low-damage film can be formed on the substrate to a predetermined thickness, and an initial layer (first layer) is formed. Thereafter, the substrate is moved by the substrate holder from the first film forming position in the first film forming unit to the second film forming position in the second film forming unit without changing sputtering conditions such as pressure in the vacuum vessel. Then, sputtering is started at the second film forming unit, which has a higher film forming rate than the first film forming unit. At this time, the second layer can be formed (formed) in a short time by performing sputtering at a high film forming speed in the second film forming unit, but charged particles such as secondary electrons flying to the substrate side. In addition, the influence of the plasma on the substrate side increases more than the sputtering in the first film forming unit.

  However, since the initial layer is formed on the substrate by the low temperature and low damage film formation in the first film forming unit, the formed initial layer serves as a protective layer, and thus the substrate when the second layer is formed. It is possible to form a film (thin film formation) at a high film formation rate while suppressing the damage caused by charged particles such as secondary electrons and the influence of plasma. That is, by covering the substrate with a bulletproof vest called an initial layer, the substrate can be protected from damage caused by flying charged particles and temperature rise due to the influence of plasma.

  Furthermore, after forming the initial layer, when the second layer is formed, it is only necessary to change the position of the substrate, and it is necessary to change the conditions such as the pressure in the vacuum vessel. Since it is not necessary to change, the required film thickness can be formed in a short time. In particular, when forming a thin film (forming a film) on a plurality of substrates, it is not necessary to change the sputtering conditions such as the pressure in the vacuum vessel, and the substrates are sequentially transferred to the first and second film forming units. Since it is only necessary to transport the substrate by the substrate holder, the film formation time for a plurality of substrates can be greatly shortened.

  From the above, it is possible to form a film on a substrate that requires low-temperature and low-damage film formation, and it is possible to shorten the film formation time when a plurality of substrates are continuously formed.

  Further, since the first composite type cathode is a magnetron cathode provided with a cylindrical auxiliary magnetic field generating means, it can be formed even on a long substrate. That is, in the opposed target type cathode, when the aspect ratio of the opposed surface of the target is longer than about 3: 1, the discharge between the targets becomes unstable, and it becomes difficult to form a high-quality thin film. In order to form a thin film on a long substrate, it is also conceivable to use an opposed target type cathode having an aspect ratio of 3: 1 but using a large target. However, in that case, the economic efficiency is extremely deteriorated. On the other hand, in the magnetron cathode, since the aspect ratio of the target facing surface can be increased to 5: 1 or more, a thin film can be formed on a long substrate corresponding to the target. Therefore, even in the first composite cathode, a thin film can be formed on a long substrate without deteriorating the economy. Moreover, the first composite-type cathode can be formed at a lower temperature and with less damage by further including a cylindrical auxiliary magnetic field generating means as compared with a normal magnetron cathode.

  Furthermore, in the present invention, in order to perform low temperature and low damage film formation, an RF coil is disposed on the opposing surface side of the pair of first targets of the first film forming unit, or an RF coil for driving the RF coil. Since it is not necessary to separately arrange a power supply for power supply, a control means for controlling the RF coil and the power supply for RF, etc., a simple configuration can be achieved.

  Further, in the sputtering method according to the present invention, in the first film formation region, a plurality of the first film formation units are arranged side by side, and an object to be formed is sequentially arranged in the plurality of first film formation units arranged in parallel. Alternatively, it may be configured to form a film at the same time, and in the sputtering apparatus according to the present invention, a plurality of the first film forming units may be arranged in parallel in the first region.

  According to such a configuration, a plurality of first film forming units are arranged in parallel in the first film forming region, and a film formation target is formed sequentially or simultaneously by the plurality of first film forming units. The deposition rate can be improved, and the productivity can be further improved by shortening the deposition time in the first deposition region.

  Further, in the sputtering method according to the present invention, in the second film formation region, a plurality of the second film formation units are arranged in parallel, and the deposition target is sequentially arranged in the plurality of second film formation units arranged in parallel. Or the structure formed simultaneously may be sufficient and the structure by which two or more said 2nd film-forming parts are arranged in parallel in the said 2nd area | region may be sufficient in the sputtering device which concerns on this invention.

  According to such a configuration, a plurality of second film forming units are arranged in parallel in the second film forming region, and a film formation target is formed sequentially or simultaneously by the plurality of second film forming units. As described above, the deposition rate can be improved, and the productivity can be further improved by shortening the deposition time in the second deposition region.

  Further, in the sputtering apparatus according to the present invention, the second film forming unit includes a parallel plate magnetron cathode configured with the sputter cathode disposed so that the surface of the second target faces the second film forming position. It may be a configuration.

  According to such a configuration, the second film forming unit has the sputter cathode (magnetron cathode) in which a curved magnetic field space is formed on the surface side when the substrate is disposed at the second film forming position. A so-called parallel plate magnetron cathode (planar magnetron cathode) arranged so that the second target and the substrate provided are opposed to each other and the surface (sputtering surface) of the second target and the film formation surface of the substrate are parallel to each other. ), Since the deposition surface of the substrate and the surface of the second target are inclined so as to have a predetermined angle, the number of sputtered particles flying to the substrate for the same input power increases. The film forming speed in the second film forming unit can be increased.

  As a result, the time required for forming the second layer in the second film formation region can be shortened, and accordingly, the film formation time for the entire film formation process when forming a thin film having the required film thickness on the substrate is also shortened. Therefore, the productivity of the thin film can be improved.

  Further, in the sputtering apparatus according to the present invention, the second film forming unit includes a pair of the sputtering cathodes arranged in parallel so that the surface of the second target faces the second film forming position, and each of the alternating currents is 180 degrees out of phase. A configuration including a dual magnetron cathode to which an AC power supply capable of applying an electric field is connected may be used.

  According to such a configuration, the second film forming unit has a pair (two units) of the sputtering cathodes (magnetron cathodes) in which the curved magnetic field space is formed on the surface side when the substrate is disposed at the second film forming position. A pair of sputter cathodes arranged in parallel and arranged so that the surface (sputter surface) of the second target included in each sputter cathode is parallel or substantially parallel to the film formation surface of the substrate. Are provided with so-called dual magnetron cathodes to which AC power sources capable of applying AC electric fields that are 180 ° out of phase are connected.

  In this dual magnetron cathode, when a negative potential is applied to one magnetron cathode, a positive potential or a ground potential is applied to the other magnetron cathode, so that the other magnetron cathode serves as an anode. As a result, the second target provided on one of the magnetron cathodes to which a negative potential is applied is sputtered. Further, when a negative potential is applied to the other magnetron cathode, a positive potential or a ground potential is applied to one of the magnetron cathodes so that the one magnetron cathode serves as an anode, and the other magnetron cathode The second target provided in is sputtered.

  In this way, by alternately switching the potential applied to the pair of magnetron cathodes, the oxide and nitride on the second target surface are not charged up, and stable discharge is possible for a long time. Therefore, it is possible to form an insulating thin film such as SiOx for a long time.

  Further, as described above, since the input power to the magnetron cathode can be increased, high-speed sputtering can be performed by increasing the input power to the cathode, and the film formation rate in the second film forming unit can be increased. .

  As a result, a high-quality second layer can be formed, and the time required for forming the second layer can be shortened. Therefore, the quality of the thin film can be improved and the productivity can be improved.

  The second film forming unit is provided so as to surround the second target, a curved magnetic field generating means for generating a curved magnetic field space in which the magnetic lines of force are arcuate on the surface of the second target, and the second target. And a pair of second composite cathodes each having a cylindrical auxiliary magnetic field generating means, wherein the pair of second composite cathodes face each other with the surfaces of the second targets spaced apart from each other. The curved magnetic field generating means of one of the pair of second composite cathodes is arranged so as to incline toward a second film forming position located laterally between the second targets, and the magnetic field lines are from the outer periphery of the second target. The inward bending magnetic field generation means is set so that the polarity is directed toward the center, and the other bending magnetic field generation means is set so that the magnetic field lines are directed from the center of the second target toward the outer periphery. The cylindrical auxiliary magnetic field generating means is a direction-bending magnetic field generating means, wherein the cylindrical auxiliary magnetic field generating means has a second inter-target space formed between one second target and the other second target. A cylindrical auxiliary magnetic field space that surrounds and has a magnetic field strength greater than that of the curved magnetic field space is generated, and the second target angle is greater than the angle formed by the surfaces of the first target in the pair of first composite cathodes provided in the first film forming unit. A structure including a pair of the second composite cathodes having a large angle between the surfaces of the target may be used.

  According to this configuration, the angle between the surfaces of the first target in the pair of first composite cathodes provided in the first film forming unit is the second target in the pair of second composite cathodes provided in the second film forming unit. Smaller than the angle formed by the surfaces of each other (the surfaces are more parallel). Therefore, in the first film forming unit, the effect of confining charged particles such as plasma and secondary electrons generated by sputtering between the targets is improved as compared with the second film forming unit. Since the influence of the plasma is reduced as well as the reduction, it is possible to form a low temperature and low damage film on the substrate.

  On the other hand, the angle formed between the surfaces of the second target in the pair of second composite cathodes included in the second film forming unit is between the surfaces of the first target in the pair of first composite cathodes included in the first film forming unit. It is larger than the angle formed (the target surface faces more toward the substrate). Therefore, in the second film formation unit, the effect of confining charged particles such as plasma and secondary electrons generated by sputtering between the targets is reduced and the number of charged particles flying to the substrate side is increased compared to the first film formation unit. At the same time, since the influence of plasma increases, the temperature rise due to the influence of plasma and damage due to the flying of charged particles are more likely to be applied to the substrate. However, since the second sputtered particles flying to the substrate side also increase, the deposition rate is much faster (larger) than that of the first deposition unit.

  Therefore, by sputtering in the first film formation unit as described above, low-temperature and low-damage film formation can be performed on the substrate to a predetermined thickness, and the initial layer (first layer) is formed (formed). The Thereafter, the substrate holder is moved by the substrate holder from the first film forming position in the first film forming unit to the second film forming position in the second film forming unit without changing the sputtering conditions such as the pressure in the vacuum vessel, Sputtering is performed in the second film forming unit at a film forming rate higher than that of the first film forming unit. As described above, in the second film forming unit, the effect of charged particles such as secondary electrons and plasma flying to the substrate side is increased compared to the first film forming unit by performing sputtering at a high film forming rate. The second layer can be formed in a short time.

  As described above, in the first film formation unit, the initial layer is formed on the substrate by low-temperature and low-damage film formation, so that the formed initial layer functions as a protective layer, and in the second film formation unit, the second layer Film formation (thin film formation) at a high film formation rate while suppressing (protecting) damage to the substrate due to the flight of charged particles such as secondary electrons to the substrate side and the influence of plasma. Can do. Furthermore, after forming the initial layer, it is only necessary to change the position of the substrate when forming the second layer, and it is not necessary to change the sputtering conditions that take time to change the conditions such as the pressure in the vacuum vessel. Therefore, the required film thickness can be formed in a short time. In particular, when a thin film is continuously formed on a plurality of substrates (film formation processing), it is not necessary to change the sputtering conditions such as the pressure in the vacuum vessel as described above, and the first and 2 Since it is only necessary to transport the substrate to the film forming unit by the substrate holder, the film forming time for a plurality of substrates can be greatly shortened.

  As a result, it is possible to form a film on a substrate that requires low-temperature and low-damage film formation, and it is possible to shorten the film formation time even when a plurality of substrates are continuously formed. That is, the entire film forming process can be shortened, and the productivity of the thin film can be improved. Accordingly, film formation can be performed on a substrate that requires low-temperature and low-damage film formation, and productivity can be improved by shortening the film formation time.

  The pair of first composite cathodes may be configured to be connected to an AC power source capable of applying an AC electric field that is 180 degrees out of phase.

  According to such a configuration, the pair of first composite cathodes are magnetron type cathodes (magnetron cathodes) provided with cylindrical auxiliary magnetic field generating means, and therefore when a negative potential is applied to one of the magnetron cathodes. A positive potential or a ground potential is applied to the other magnetron cathode, so that the other magnetron cathode serves as an anode, whereby a first target provided in one magnetron cathode to which a negative potential is applied. Is sputtered. Further, when a negative potential is applied to the other magnetron cathode, a positive potential or a ground potential is applied to one of the magnetron cathodes so that the one magnetron cathode serves as an anode, and the other magnetron cathode The first target provided in is sputtered.

  As described above, by alternately switching the potential applied to the pair of magnetron cathodes as described above, the oxide and nitride are not charged up on the surface of the first target, and stable discharge is possible for a long time. Therefore, it is possible to form an insulating thin film such as SiOx for a long time.

  As a result, a high-quality initial layer (first layer) can be formed, and thus the quality of the thin film can be improved.

  As described above, according to the present invention, it is possible to perform low-temperature and low-damage film formation with a simple configuration, and a high productivity sputtering method even when a plurality of substrates are continuously formed. A sputtering apparatus can be provided.

  Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 1 to 3.

  As shown in FIG. 1, a sputtering apparatus 1 includes a vacuum container (chamber) 2 having an internal space S and a first composition for forming a film on a film formation surface B ′ of a substrate B that is a film formation target. With the film part P1 and the second film forming part P2 and the substrate B held, at least from the first film forming position L1 that is the film forming position on the substrate B in the first film forming part P1, the second film forming part A substrate holder 3 that can move in the vacuum vessel 2 (in the direction of arrow A) is provided to a second film formation position L2 that is a film formation position on the substrate B in P2.

  In addition, the sputtering apparatus 1 includes a first sputtering power supply power source 4a for supplying sputtering power to the first film forming unit P1, and a second sputtering power supply for supplying sputtering power to the second film forming unit P2. Power source 4b, an exhaust device 5 for exhausting the inside of the vacuum vessel 2 (internal space S), and a sputtering gas supply device 6 for supplying a sputtering gas into the vacuum vessel 2. The vacuum vessel 2 may include a reactive gas supply device 7 for supplying a reactive gas in the vicinity of the substrate B.

  The vacuum vessel 2 is connected to other process chambers or load lock chambers 9 and 9 'via communication passages (substrate transfer line valves) 8 and 8' on both sides of the substrate holder 3 side (lower end side in the figure). ing.

  The internal space S of the vacuum vessel 2 is composed of a first film formation region F1 for disposing the first film formation portion P1 and a second film formation region F2 for disposing the second film formation portion P2. The first film forming part P1 and the second film forming part P2 are arranged in parallel.

  The first film forming unit P1 includes a pair of first cathodes (first target holders) 11a and 11b having first targets 10a and 10b at their tips, respectively, and the pair of first cathodes 11a and 11b is a first target. Surfaces 10a ′ and 10b ′ of 10a and 10b are arranged so as to face each other with a space therebetween.

  The first cathodes 11a and 11b include first targets 10a and 10b that are fixed to the front ends of the first cathodes 11a and 11b via the backing plates 12a and 12b, and the back surfaces of the backing plates 12a and 12b (first target). The first curved magnetic field is generated on the side opposite to the surface on which 10a and 10b are fixed and generates a magnetic field space curved in an arc shape on the first target surface (opposite surface) 10a ′ and 10b ′ side. A cylindrical magnetic field space is generated between the means 20a and 20b and the tip of the first cathode 11a (11b) and the periphery of the tip of the other first cathode 11b (11a). First cylindrical auxiliary magnetic field generating means 30a, 30b.

  Specifically, the opposing surfaces 10a ′ and 10b ′ of the first targets 10a and 10b are both lateral positions between the pair of first targets 10a and 10b, and the substrate is formed in the first film forming unit P1 described later. The film is disposed so as to be inclined toward the first film forming position L1 which is a position where the film is formed on B. At this time, the angle θ1 formed by the opposing surfaces 10a ′ and 10b ′, specifically, the angle θ1 formed by the surfaces extending in the direction along the opposing surfaces 10a ′ and 10b ′ is set to 0 ° to 60 °. Is done. The angle (formed angle) θ1 is set to a small angle so that charged particles such as plasma and secondary electrons generated during sputtering do not damage the deposition surface B ′ of the substrate B beyond an allowable amount. The In the present embodiment, the angle θ1 formed is 0 ° to 45 °, preferably 5 ° to 20 °.

  In the first embodiment and other embodiments described later, a cathode that generates a curved magnetic field space on the target-facing surface is referred to as a “magnetron cathode”, and a cathode that includes the cylindrical auxiliary magnetic field generating means is provided on the magnetron cathode. A pair of cathodes in which the opposing surfaces of the target disposed on the composite cathode are substantially V-shaped may be referred to as “composite V-type cathodes”.

  In the present embodiment, each of the pair of first targets 10a and 10b is made of indium tin oxide (ITO). The first targets 10a and 10b are each formed in a rectangular plate-like body having a size of 125 mm in width, 300 mm in length, and 5 mm in thickness. The first targets 10a and 10b are arranged to face the first film forming part P1 (first film forming region F1) in the vacuum vessel 2, and the facing surfaces (surfaces to be sputtered) 10a ′ and 10b ′ are predetermined. (Here, the distance between the centers T1a and T1b of the opposed surfaces 10a ′ and 10b ′ is d1 = 160 mm).

  The first curved magnetic field generating means 20a, 20b are magnetic field spaces (curved magnetic field spaces W1, W1 ′: arrow W1 in FIG. 1) in which the magnetic lines of force are in the vicinity of the opposing surfaces 10a ′, 10b ′ of the first targets 10a, 10b. , W1 ′) for generating (forming), and in the present embodiment, it is constituted by a permanent magnet.

  The first bending magnetic field generating means (permanent magnets) 20a and 20b are made of a ferromagnetic material such as a ferrite-based, neodymium-based (for example, neodymium, iron, boron) magnet or a samarium-cobalt-based magnet. Is made of a ferrite magnet.

  As shown in FIG. 2, the first bending magnetic field generating means 20a, 20b includes frame-shaped magnets 21a, 21b and central magnets 22a, 22b having magnetic poles opposite to the frame-shaped magnets 21a, 21b. , 23b. More specifically, the first bending magnetic field generating means 20a, 20b includes frame-shaped magnets 21a, 21b formed in a rectangular shape in front view, and rectangular magnets 22a, 22b in front view located at the center of the opening. Are fixed to plate-shaped yokes 23a and 23b having a constant thickness and the outer peripheral edges of the magnets 21a and 21b as viewed from the front (FIGS. 2B and 2C). reference).

  One of the first bending magnetic field generating means 20a includes a frame-shaped magnet 21a having an N pole (S pole) and a center magnet 22a having an S pole (N pole) at the backing plate 12a side end (yoke 23a side end). The other first curved magnetic field generating means 20b is arranged on the back surface of the backing plate 12a so that the frame-shaped magnet 21b has an S pole (N pole) at the backing plate 12b side end (yoke 23b side end). The central magnet 22b is arranged on the back surface of the backing plate 12b so as to be an N pole (S pole). In this way, in the first target 10a, an inwardly curved magnetic field space W1 is formed so that the magnetic lines of force are arcuate from the outer periphery of the first target surface (opposing surface) 10a ′ toward the center, On the other first target 10b, an outwardly curved magnetic field space W1 ′ is formed such that the lines of magnetic force are arcuate from the center of the first target surface (opposing surface) 10b ′ toward the outer periphery. The inward bending magnetic field space W1 and the outward bending magnetic field space W1 ′ may be simply referred to as “curving magnetic field space W”.

  The first cylindrical auxiliary magnetic field generating means 30a, 30b are formed of permanent magnets similarly to the first curved magnetic field generating means 20a, 20b, and as shown in FIG. 3, the first cathode (target holder) 11a, It is formed in a rectangular tube shape that can be fitted (externally fitted) along the outer periphery of the tip end portion 11b. In the present embodiment, the first cylindrical auxiliary magnetic field generating means 30a and 30b are made of neodymium-based neodymium / iron / boron magnet or the like, and are formed in a rectangular frame shape in front view and a peripheral wall along the front-rear direction. Is formed in a rectangular tube shape that is constant (see FIGS. 3B and 3C). The peripheral walls constituting the first cylindrical auxiliary magnetic field generating means 30a, 30b are the thinnest at the top wall 31 and the thinnest side walls 32, 32. As will be described later, the outer walls of the first cathodes 11a, 11b are outside. When fitted, the bottom wall 33 on the side of the substrate B is formed to be thickest. In the present embodiment, the first cylindrical auxiliary magnetic field generating means 30a and 30b are formed in a rectangular tube shape, but may be in a cylindrical shape or the like so as to surround the first targets 10a and 10b. It only has to be arranged.

  The thickness of the peripheral wall is set such that the magnetic field strength at the intermediate position between the corresponding portions of the tips of the pair of first cylindrical auxiliary magnetic field generating means 30a and 30b is constant. Accordingly, the difference in thickness varies depending on the value of the angle θ1 formed by the opposing surfaces 10a ′ and 10b ′. Therefore, when the value of the angle θ1 formed becomes large, the thickness of the side walls 32, 32 may be set to gradually increase from the top wall 31 toward the bottom wall 33 (FIG. 3 (A)). See dotted line).

  The first cylindrical auxiliary magnetic field generating means 30a and 30b have the first cathodes 11a and 11b so that the magnetic poles on the front end side are the same as the frame-shaped magnets 21a and 21b of the first curved magnetic field generating means 20a and 20b. It arrange | positions so that it may externally fit by the front end side outer periphery (refer FIG. 3 (D)). By arranging in this way, the space (inter-target space) K1 formed between the first targets 10a and 10b is surrounded in a cylindrical shape, and the direction of the magnetic field lines is changed from the one first target 10a to the other first target. A cylindrical auxiliary magnetic field space t1 that extends toward 10b is formed (see arrow t1 in FIG. 1).

  The second film forming unit P2 includes a pair of second cathodes (second target holders) 111a and 111b having second targets 110a and 110b at the tips, respectively, and the pair of second cathodes 111a and 111b is a second target. The surfaces 110a ′ and 110b ′ of 110a and 110b are arranged so as to face each other with a space therebetween.

  The second cathodes (second target holders) 111a and 111b are fixed to the front ends of the second cathodes 111a and 111b via the backing plates 112a and 112b in the same manner as the first cathodes 11a and 11b in the first film forming unit P1. The second targets 110a and 110b and the second targets 110a and 110b are disposed on the back side of the backing plates 112a and 112b, and the second target surfaces (opposing surfaces) 110a ′ and 110b ′ generate a magnetic field space curved in an arc shape. A cylindrical magnetic field space is formed between the bending magnetic field generating means 120a and 120b and the periphery of the tip of the second cathode 111b (111a) while being fitted around the tip of the second cathode 111a (111b). Second cylindrical auxiliary magnetic field generating means 130a, 130b to be generated.

  Specifically, the opposing surfaces 110a ′ and 110b ′ of the pair of second targets 110a and 110b are both lateral positions between the pair of second targets 110a and 110b, and a second film forming unit P2 described later. In FIG. 2, the film is disposed so as to be inclined toward the second film forming position L2, which is a position where the film is formed on the substrate B. At this time, the angle θ2 formed by the opposing surfaces 110a ′ and 110b ′ is 45 ° to 180 ° and larger than the angle θ1 formed by the opposing surfaces 10a ′ and 10b ′ of the first targets 10a and 10b (that is, θ1). <Θ2) is arranged (set). This angle (the angle formed) θ2 is larger than the formed angle θ1 when the sputtering is performed, and the influence of plasma on the substrate B side and charged particles such as secondary electrons flying to the substrate B side are increased. Is an angle that is faster than the angle θ1 formed by the angle θ1 and is more preferably 60 ° to 120 ° (when θ1 is 5 ° to 20 ° and θ1 <θ2). In the present embodiment, 45 ° ( θ1 is 20 °).

  In the present embodiment, the pair of second targets 110a and 110b are both made of indium tin oxide (ITO), like the pair of first targets 10a and 10b in the first film forming unit P1. . Further, the size of the second targets 110a and 110b is also formed in a rectangular plate-like body having a width of 125 mm, a length of 300 mm, and a thickness of 5 mm, like the first targets 10a and 10b. The second targets 110a and 110b are arranged to face the second film forming part P2 (second film forming region F2) in the vacuum chamber 2, and the facing surfaces (surfaces to be sputtered) 110a ′ and 110b ′ are predetermined. They are arranged with an interval (here, the distance between the centers T2a and T2b of the opposing surfaces 110a ′ and 110b ′ is an interval of d2 = 160 mm (= d1) in the drawing). In the present embodiment, the first target 10a, 10b and the second target 110a, 110b are configured to have the same shape. However, the present invention is not limited to this, and the size or shape is mutually different. It may be different. In the present embodiment, the first and second targets 10a, 10b, 110a, and 110b are formed by the first and second cathodes 11a, 11b, 111a, and 111b so that d1 = d2. Although it arrange | positions in area | region F1, F2, respectively, you may arrange | position so that d1 and d2 may become a different distance.

  The second bending magnetic field generating means 120a, 120b is a magnetic field space (curving magnetic field space W2, W2 ′: arrow W2 in FIG. 1) in which the magnetic lines of force are in the vicinity of the opposing surfaces 110a ′, 110b ′ of the second targets 110a, 110b. , W2 ′ (see FIG. 2), and is configured by a permanent magnet in the present embodiment.

  The second bending magnetic field generating means (permanent magnets) 120a and 120b are also made of a ferromagnetic material such as a ferrite-based, neodymium-based magnet or samarium / cobalt-based magnet, like the first bending magnetic field generating means 20a, 20b. In this embodiment, it is composed of a ferrite magnet.

  The second bending magnetic field generation means 120a and 120b have the same configuration as the first bending magnetic field generation means 20a and 20b, and are center magnets having frame-shaped magnets 121a and 121b and magnetic poles opposite to the frame-shaped magnets 121a and 121b. 122a and 122b are formed by being arranged on the yokes 123a and 123b. More specifically, the second bending magnetic field generating means 120a, 120b includes frame-shaped magnets 121a, 121b formed in a rectangular shape in a front view, and rectangular magnets 122a, 122b in a front view located at the center of the opening. Are fixed to plate-shaped yokes 123a and 123b having a constant thickness and the outer peripheral edges of the magnets 121a and 121b when viewed from the front.

  One of the second bending magnetic field generating means 120a has a frame-shaped magnet 121a having an N pole (S pole) and a center magnet 122a having an S pole (N pole) at the backing plate 112a side end (yoke 123a side end). The other second curved magnetic field generating means 120b is arranged on the back surface of the backing plate 112a so that the frame-shaped magnet 121b is S pole (N pole) at the backing plate 112b side end (yoke 123b side end). The central magnet 122b is arranged on the back surface of the backing plate 112b so as to be an N pole (S pole). In this way, in one second target 110a, an inwardly curved magnetic field space W2 is formed such that the magnetic lines of force are arcuate from the outer periphery of the second target surface (opposing surface) 110a ′ toward the center, On the other second target 110b, an outwardly curved magnetic field space W2 ′ is formed such that the lines of magnetic force are arcuate from the center of the second target surface (opposing surface) 110b ′ toward the outer periphery.

  The second cylindrical auxiliary magnetic field generating means 130a, 130b are formed of permanent magnets in the same manner as the first curved magnetic field generating means 20a, 20b in the first film forming part P1, and the first cylindrical auxiliary magnetic field generating means 30a, 30b It has the same configuration and is formed in a rectangular tube shape that can be fitted (externally fitted) along the outer periphery of the tip of the second cathode (target holder) 111a, 111b. In the present embodiment, the second cylindrical auxiliary magnetic field generating means 130a and 130b are made of neodymium-based neodymium / iron / boron magnet or the like, and are formed in a rectangular frame shape when viewed from the front and have peripheral walls along the front-rear direction. It is formed in a rectangular tube shape so that the thickness of the tube is constant. And the thickness of the surrounding wall which comprises the 2nd cylindrical auxiliary | assistant magnetic field generation | occurrence | production means 130a, 130b is formed so that the top wall is the thinnest, the side wall is then thin, and the bottom wall is the thickest. Note that the second cylindrical auxiliary magnetic field generating means 130a and 130b are not square cylinders as long as they are arranged so as to surround the second targets 110a and 110b, similarly to the first cylindrical auxiliary magnetic field generating means 30a and 30b. Other shapes may be used.

  Similar to the pair of first cylindrical auxiliary magnetic field generating means 30a and 30b in the first film forming part P1, the thickness of the peripheral wall is equal to each other at the tip of the pair of second cylindrical auxiliary magnetic field generating means 130a and 130b. The thickness is set so that the magnetic field intensity at the intermediate position is constant.

  The second cylindrical auxiliary magnetic field generation means 130a and 130b have the second cathodes 111a and 111b so that the magnetic poles on the front end side are the same as the frame-shaped magnets 121a and 121b of the second curved magnetic field generation means 120a and 120b. It arrange | positions so that it may externally fit by the front end side outer periphery. By arranging in this way, the space (inter-target space) K2 formed between the second targets 110a and 110b is enclosed in a cylindrical shape, and the direction of the lines of magnetic force changes from the one second target 110a to the other second target. A cylindrical auxiliary magnetic field space t2 that extends toward 110b is formed (see arrow t2 in FIG. 1).

  As described above, the first film forming unit P1 and the second film forming unit P2 are formed by the opposing surfaces 10a ′ and 10b ′ (110a ′ and 110b ′) of the pair of targets 10a and 10b (111a and 111b). The configuration is the same except for the angle θ1 (θ2). The first film forming unit P1 and the second film forming unit P2 having such a configuration are arranged in parallel in the vacuum vessel 2. Specifically, the first cathodes 11a and 11b of the first film forming unit P1 and the second cathodes 111a and 111b of the second film forming unit P2 are arranged side by side in the vacuum vessel 2 in a line. More specifically, a pair of targets 10a and 10b in which the centers T1a, T1b, T2a, and T2b of the first and second targets 10a, 10b, 110a, and 110b are located on the same line and are opposed to each other at an inclination. A first center plane C1 and a second center plane C2, which will be described later, of (111a, 111b) are arranged side by side so as to be parallel or substantially parallel.

  The first sputter power supply power source 4a is a power source that can apply DC constant power or constant current. The vacuum container 2 at the ground potential (earth potential) is used as an anode, and the first targets 10a and 10b are used as the first target Sputtering power is supplied as a cathode (cathode). The second sputtering power supply power source 4b is a power source to which a constant DC power or a constant current can be applied. The vacuum container 2 at the ground potential (earth potential) is used as an anode, and the second target 110a, Sputtering power is supplied by using 110b as a cathode.

  In the present embodiment, the first and second sputtering power supply power sources 4a and 4b are both power sources capable of applying DC constant power, but are not limited thereto. That is, the power sources 4a and 4b for supplying the sputtering power can be appropriately changed depending on the material of the target and the type of thin film to be manufactured (metal film, alloy film, compound film, etc.). Examples of the power source that can be changed include an RF power source and an MF power source, and the DC power source can be used by superimposing the RF power source. Further, one DC power source or one RF power source may be connected to each cathode. Further, the first and second sputtering power supply power sources 4a and 4b do not need to be the same type of power source, and may be different types of power sources.

  The substrate holder 3 holds the substrate B and in that state (held state), at least from the first film forming unit P1 to the second film forming unit P2, more specifically, the substrate B is formed in the first film forming unit P1. A moving means (not shown) is provided that can move from the first film forming position L1 that is a film forming position to the second film forming position L2 that is the position where the substrate B is formed in the second film forming unit P2. . Further, when the substrate holder 3 is moved by the moving means, at the first and second film formation positions L1 and L2, the substrate holder 3 has the film formation surface B ′ of the held substrate B so that the first film formation portion. The pair of first cathodes 11a and 11b of P1 and the pair of second cathodes 111a and 111b of the second film forming unit P2 are moved to face each other.

  In the case of the present embodiment, the substrate holder 3 carries the substrate B from the other process chamber (load lock chamber) 9 on one side of the vacuum vessel 2 into the vacuum vessel 2, and the first and second film forming parts P1, After forming the film on the film formation surface B ′ at P2, the substrate B is carried out to the other process chamber (load lock chamber) 9 ′ on the other side. Therefore, the substrate holder 3 has the other process chamber 9 on one side and the other space on the other side so as to cross the internal space S of the vacuum vessel 2 from the first film formation region F1 to the second film formation region F2. Move on a line connecting the process chamber 9 '.

  The first film formation position L1 and the second film formation position L2 are positioned (exist) on lines connecting the other process chambers 9 and 9 'connected to both sides of the vacuum vessel 2, respectively. Specifically, when the substrate holder 3 holding the substrate B is arranged, the first film formation position L1 is such that the film formation surface B ′ of the substrate B faces the center between the first targets 10a and 10b, The centers T1a and T1b of the opposing surfaces 10a ′ and 10b ′ of the first targets 10a and 10b are orthogonal to a surface (first central surface) C1 that bisects the angle θ1 formed by the opposing surfaces 10a ′ and 10b ′. The position is such that the shortest distance between the connecting straight line (T1-T1 line) and the center of the film formation surface B ′ is e1 = 175 mm.

  Further, the second film formation position L2 is such that when the substrate holder 3 holding the substrate B is disposed, the film formation surface B ′ of the substrate B faces the center between the second targets 110a and 110b, and the opposite surface. A straight line that is orthogonal to the plane (second central plane) C2 that bisects the angle θ2 formed by 110a ′ and 110b ′ and that connects the centers T2a and T2b of the opposing surfaces 110a ′ and 110b ′ of the second targets 110a and 110b. This position is such that the shortest distance between (T2-T2 line) and the center of the film formation surface B ′ is e2 = 175 mm (= e1).

  The exhaust device 5 is connected to the vacuum vessel 2 so that the inside of the vacuum vessel 2 can be exhausted, and is used to lower the pressure in the internal space S by exhausting the inside of the vacuum vessel 2.

  The sputtering gas supply device 6 is connected to the vacuum vessel 2 in order to supply a discharge gas (sputtering gas) between the targets. The sputter gas supply device 6 includes a first inert gas introduction pipe 6 ′ for supplying an inert gas (argon (Ar) gas in the present embodiment) disposed in the vicinity of the first targets 10a and 10b. And a second inert gas introduction pipe 6 ″ disposed in the vicinity of the second targets 110a and 110b. The sputter gas supply device 6 supplies the inert gas to the first inert gas introduction pipe 6 ′ and It is possible to supply both of the second inert gas introduction pipes 6 ″ and switch the inert gas to only one of the first inert gas introduction pipe 6 ′ and the second inert gas introduction pipe 6 ″. It can also be supplied.

In addition, a reactive gas supply device 7 and the reactive gas supply are provided in the vicinity of each of the first film formation position L1 and the second film formation position L2 in order to produce a dielectric thin film such as an oxide or a nitride. A reactive gas such as O ₂ or N ₂ is introduced from the apparatus 7 toward the first film formation position L1, and first reactive gas introduction pipes 7 ′ and 7 ′ for introducing the reactive gas toward the first film formation position L1 and the second film formation position L2. Two reactive gas supply pipes 7 ", 7" can also be provided. The reactive gas supply device 7 can supply the reactive gas to both the first reactive gas introduction pipes 7 ′ and 7 ′ and the second reactive gas introduction pipes 7 ″ and 7 ″, as well as the reaction. The reactive gas can be supplied to only one of the first reactive gas introduction pipes 7 'and 7' or the second reactive gas introduction pipes 7 "and 7" in a switchable manner.

The substrate B is a deposition target on which a thin film is formed on the deposition surface B ′. In the present embodiment, the relationship between the size of the substrate B to be sputtered and the dimensions of the targets 10a and 10b is generally related to the required film thickness distribution uniformity in the substrate surface (deposition surface) B ′. When the film thickness distribution uniformity is within about ± 10% of the film thickness distribution, the substrate width _{SW (} mm) which is the length in the longitudinal direction of the targets 10a and 10b in the substrate B and the width of the substrate B in the targets 10a and 10b The relationship with the longitudinal dimension T _L (mm), which is the length in the direction, is expressed as S _W ≦ T _L × 0.6 to 0.7. Thus, in the sputtering apparatus 1 according to this embodiment, since using the rectangular target having a width 125 mm × length 300 mm × thickness 5 mm, the substrate B dimension, than the relationship, the substrate width S _W of approximately 200mm A film can be formed on the substrate B having a size. In addition, the sputtering apparatus 1 has an apparatus configuration for substrate-passing film formation (sputtering while transporting the substrate B in the left-right direction in FIG. 1), and the length of the substrate B is limited (restricted) in apparatus dimensions. The film can be formed to a size larger than the substrate width. For example, in this embodiment, a film can be formed within a film thickness distribution of ± 10% on a substrate B having a size of 200 mm wide × 200 mm long, 200 mm wide × 250 mm long, or 200 mm wide × 300 mm long. It is. At this time, as the substrate B on which a thin film is formed on the deposition surface B ′ by sputtering, a substrate B that requires low-temperature, low-damage film formation such as an organic EL element or an organic thin film semiconductor is used.

  In the present embodiment, the width of the substrate B is the length in the direction along the longitudinal direction of the targets 10a and 10b, and the length of the substrate B is the direction orthogonal to the longitudinal direction of the targets 10a and 10b (FIG. 1). In the horizontal direction).

  In the present embodiment, as the substrate B on which a thin film is formed on the deposition surface B ′ by sputtering, a substrate that requires low-temperature and low-damage film formation, such as an organic EL element or an organic semiconductor, can be used. .

  The sputtering apparatus 1 according to the first embodiment has the above-described configuration. Next, an operation for forming a thin film in the sputtering apparatus 1 will be described.

  In forming the thin film on the film-forming surface B ′ of the substrate B, in this embodiment, after forming the initial layer (first layer) by sputtering capable of low-temperature, low-damage film formation (low film formation speed), By forming the second layer by sputtering at a high film formation rate, a thin film having a required film thickness is formed on the film formation surface B ′. Details will be described below. Note that the initial layer (first layer) and the second layer are only described by imaginary planes with different film forming speeds in the film thickness direction of the thin film to be formed. The thin film is not divided into layers, but is formed as a continuous, integral thin film.

  First, when forming the initial layer, the substrate B is held by the substrate holder 3, and in this state, the substrate holder 3 is moved to the first film formation position L1 (the positions of the substrate B and the substrate holder 3 drawn by the solid line in FIG. 1). To place.

  Next, the inside of the vacuum vessel (chamber) 2 is evacuated by the exhaust device 5. Thereafter, argon gas (Ar) is introduced from the first inert gas introduction pipe 6 ′ and the second inert gas introduction pipe 6 ″ by the sputtering gas supply device 6, and a predetermined sputtering operation pressure (here, 0.4 Pa). And

  Then, the sputtering power is supplied to the first targets 10a and 10b by the first sputtering power supply 4a. At this time, since the first bending magnetic field generation means 20a, 20b and the first cylindrical auxiliary magnetic field generation means 30a, 30b are constituted by permanent magnets, the first bending magnetic field generation means 20a, 20b causes the first target 10a, First facing magnetic field spaces (first inward and outward bending magnetic field spaces) W1 and W1 ′ are formed on the opposing surfaces 10a ′ and 10b ′ of 10b, respectively, and further, by the first cylindrical auxiliary magnetic field generating means 30a and 30b. A cylindrical auxiliary magnetic field space t1 is formed so as to surround (enclose) a columnar space K1 formed between the opposing surfaces 10a ′ and 10b ′ of the first targets 10a and 10b.

  Then, plasma is formed in the first curved magnetic field spaces W1 and W1 ', the opposing surfaces 10a' and 10b 'of the first targets 10a and 10b are sputtered, and (first) sputtered particles are scattered. The charged particles such as plasma and secondary electrons that have protruded from the first curved magnetic field spaces W1 and W1 ′ are surrounded by the first cylindrical auxiliary magnetic field space t1 by the first cylindrical auxiliary magnetic field space t1. It is confined in a space (first inter-target space) K1.

  Thus, the sputtered particles (first sputtered particles) that have jumped out (struck out) from the sputter surfaces (opposite surfaces) 10a ′ and 10b ′ of the first targets 10a and 10b are located in the lateral positions of the first inter-target space K1. At (first film forming position L1), a thin film (initial layer of the thin film) is attached to the substrate B arranged by the substrate holder 3 so that the film forming surface B ′ faces the first inter-target space K1. It is formed.

  At this time, in general, in sputtering performed by arranging a pair of targets so as to face each other, if the distance between the centers of the targets is the same, the smaller the angle θ formed by the facing surfaces of the pair of targets is, Since the magnetic field strength in the inter-target space increases (becomes closer to parallel), charged particles such as secondary electrons flying to the substrate side are reduced, and the confinement effect of plasma in the inter-target space is improved. However, since both opposing surfaces approach parallel, sputtered particles flying to the substrate side are also reduced. Therefore, although low temperature and low damage film formation can be performed on the substrate, the film formation rate of the thin film formed on the substrate is slow (small).

  On the other hand, the greater the angle θ formed by the opposing surfaces of a pair of targets (the more the opposing surfaces are directed toward the substrate), the greater the distance between the substrate-side ends of the opposing surfaces, and the magnetic field strength in the space between the targets in such portions. Because it becomes smaller (weaker), charged particles such as plasma and secondary electrons are more likely to jump out from the part where the magnetic field strength is reduced, and charged particles such as secondary electrons flying to the substrate side increase and between the plasma targets. The confinement effect in space becomes worse. However, since the opposing surface is directed toward the substrate, the number of sputtered particles that reach the substrate also increases, so that the temperature rise of the substrate B and the damage caused by charged particles on the substrate increase more than when the angle θ formed is small. The film formation rate increases.

  Therefore, as described above, the angle θ1 formed between the facing surfaces 10a ′ and 10b ′ of the first targets 10a and 10b is such that charged particles such as plasma and secondary electrons are damaged more than an allowable amount to the substrate B during sputtering. The angle is set to a parallel (small) angle that does not give a negative effect, so that the confinement effect of charged particles such as plasma and secondary electrons in the first inter-target space K1 can be improved.

  Furthermore, since the first cylindrical auxiliary magnetic field generating means 30a and 30b are arranged on the first cathodes 11a and 11b, the first cylindrical auxiliary magnetic field space t1 is formed outside the first inter-target space K1. The Therefore, a first cylindrical auxiliary magnetic field space t1 is formed between the first bending magnetic field spaces W1, W1 ′ formed on the first target surfaces (opposing surfaces) 10a ′, 10b ′ and the substrate B, and the first bending is performed. The plasma that protrudes from the magnetic field spaces W1 and W1 ′ is confined by the first cylindrical auxiliary magnetic field space t1 (prevented from protruding to the substrate B side), thereby further reducing the influence of the plasma on the substrate B. it can.

  In addition, charged particles such as secondary electrons that protrude from the first curved magnetic field spaces W1 and W1 ′ to the substrate B side also surround the first inter-target space K1 and the first cylindrical auxiliary magnetic field space t1. Since it is formed between the one bending magnetic field space W1, W1 ′ and the substrate B, the effect of confining charged particles in the first inter-target space K1 is increased. That is, the protruding of the charged particles from the first inter-target space K1 toward the substrate B is further reduced.

  Further, the first cylindrical auxiliary magnetic field generating means 30a, 30b is configured such that the bottom walls 33, 33 having a large thickness are on the side (substrate B side) where the distance between the opposing surfaces of the pair of first targets 10a, 10b increases. Thus, the magnetic field strength in the vicinity of the first cylindrical auxiliary magnetic field generation means 30a and 30b becomes stronger as the distance between the surfaces facing each other in the pair of first targets 10a and 10b increases.

  If the magnetic field strength in the vicinity of the first cylindrical auxiliary magnetic field generating means 30a and 30b arranged along the periphery of the pair of first targets 10a and 10b is all the same magnetic field strength, the pair of first targets 10a. , 10b facing each other (sputtering surfaces) 10a ', 10b' are inclined so as to face the film-forming surface B 'of the substrate B (when the angle θ> 0 ° is formed). ), The magnetic field strength at the intermediate point from one first target 10a to the other first target 10b becomes weaker as the distance between the opposing faces increases. For this reason, plasma protrudes from the portion where the magnetic field strength is reduced (on the side of the substrate B), and charged particles such as secondary electrons are ejected, so that the substrate B is damaged.

  However, if the first cylindrical auxiliary magnetic field generating means 30a and 30b are configured as described above, the magnetic field strength in the vicinity of the first cylindrical auxiliary magnetic field generating means 30a and 30b increases as the distance between the opposing surfaces increases. Therefore, it is possible to always obtain a constant magnetic field strength at the intermediate point.

  Therefore, even if the first targets 10a and 10b are disposed so as to be inclined toward the substrate B side (first film formation position L1 side) (so-called V-type opposed arrangement), the distance between the opposed surfaces 10a ′ and 10b ′ is It is possible to effectively suppress the protrusion of plasma from the point where it has increased and the discharge of charged particles such as secondary electrons, and the effect of confining charged particles such as plasma and secondary electrons between targets can be improved.

  The first cylindrical auxiliary magnetic field generating means 30a and 30b may be set to any one of earth potential, minus potential, plus potential, and floating (electrically insulated state), or earth potential and minus potential. Alternatively, it may be set so that the ground potential and the plus potential are alternately switched in time. By setting the potential of the first cylindrical auxiliary magnetic field generating means 30a, 30b to any one of the above, a pair of magnetron cathodes not provided with the first cylindrical auxiliary magnetic field generating means 30a, 30b can be used as opposed surfaces of the target. The discharge voltage can be lowered as compared with the V-type opposed magnetron sputtering apparatus (conventional magnetron sputtering apparatus) arranged to be inclined toward the substrate side.

  As described above, in the first film forming unit P1, it is possible to perform sputtering in a state in which the confinement effect of charged particles such as plasma and secondary electrons generated by sputtering in the first inter-target space K1 is very good. Therefore, the influence of the plasma and the influence of charged particles such as secondary electrons flying from the sputtering surfaces 10a ′ and 10b ′ can be extremely reduced with respect to the film formation surface B ′ of the substrate B. The initial layer of the thin film can be formed by the film. In the present embodiment, the initial layer is formed so as to have a thickness of about 10 to 20 nm.

  Next, the second layer is deposited, but before that, the sputtering in the first deposition unit P1 is stopped. After the sputtering is stopped, the substrate holder 3 is moved by the moving means from the first film forming position L1 to the second film forming position L2 while holding the substrate B having the initial layer formed on the film forming surface B ′. Let After the substrate holder 3 moves to the second film formation position L2, sputtering is started in the second film formation part P2 to form the second layer. At this time, since it is not necessary to change the sputtering conditions such as the atmospheric pressure in the vacuum vessel 2, the substrate holder 3 immediately moves from the first film formation position L1 to the second film formation position L2 and immediately after the second film formation position L2. Sputtering can be started.

  In the second film forming part P2, the sputtering power is supplied to the second targets 110a and 110b by the second power supply 4b for sputtering as in the first film forming part P1. At this time, since the second bending magnetic field generation means 120a, 120b and the second cylindrical auxiliary magnetic field generation means 130a, 130b are configured by permanent magnets, the second bending magnetic field generation means 120a, 120b causes the second target 110a, Second curved magnetic field spaces (second inward and outward curved magnetic field spaces) W2 and W2 ′ are formed on the opposing surfaces 110a ′ and 110b ′ of 110b, respectively, and further, by the second cylindrical auxiliary magnetic field generating means 130a and 130b. A cylindrical auxiliary magnetic field space t2 is formed so as to surround (enclose) the columnar space K2 formed between the opposing surfaces 110a ′ and 110b ′ of the second targets 110a and 110b.

  Then, plasma is formed in the second curved magnetic field spaces W2 and W2 ', the opposing surfaces 110a' and 110b 'of the second targets 110a and 110b are sputtered, and (second) sputtered particles are scattered. Then, charged particles such as plasma and secondary electrons that have protruded from the second bending magnetic field spaces W2 and W2 ′ are surrounded by the second auxiliary magnetic field space t2 by the second auxiliary auxiliary magnetic field space t2. (Space between second targets) Confined in K2.

  Thus, the sputtered particles (second sputtered particles) that have jumped out (struck out) from the sputter surfaces (opposite surfaces) 110a ′ and 110b ′ of the second targets 110a and 110b are located in the lateral positions of the second inter-target space K2. A thin film (second layer of the thin film) is attached to the substrate B arranged by the substrate holder 3 so that the film formation surface B ′ faces the second inter-target space K2 at the (second film forming position L2). Is formed.

  At this time, the angle θ2 formed between the opposing surfaces 110a ′ and 110b ′ of the pair of second targets 110a and 110b in the second film forming unit P2 is larger than the angle θ1 formed in the first film forming unit F1, that is, Since the opposing surfaces 110a ′ and 110b ′ are more directed toward the substrate B, the influence of the plasma on the substrate B and the amount of charged particles that fly are increased.

  However, as described above, since the facing surfaces 110a ′ and 110b ′ are directed more toward the substrate B, the sputtering surfaces (facing surfaces) 110a ′ and 110b ′ are sputtered and scattered (second) sputtered particles. Since the amount reaching the substrate B (film formation surface B ′) also increases, the film formation speed increases.

  In this way, in the second film forming portion P2, the second layer is formed on the initial layer at a higher film forming speed than during the formation of the initial layer. In the present embodiment, the second layer is formed to a thickness of about 100 to 150 nm.

  In this way, the first film formation speed is changed by changing the angle θ formed between the opposing surfaces of the pair of targets, with the initial layer (first layer) and the second layer on the film formation surface B ′. In the case where the film is formed in order by the portion P1 (angle θ1 formed by the facing surfaces 10a ′ and 10b ′) and the second film forming unit P2 (angle θ2 formed by the facing surfaces 110a ′ and 110b ′), the formed angle is θ1 <θ2. If the input power to the first target 10a, 10b and the second target 110a, 110b is the same, the film formation rate during the second layer film formation is about 20% compared to the film formation rate during the first layer film formation. Can be increased by ~ 50%. Further, by increasing the input power to the second cathodes 111a and 111b at the angle θ2 formed, it is possible to realize a film formation rate of twice or more.

  As described above, by providing the first cylindrical auxiliary magnetic field generating means 30a and 30b so as to be fitted on the outer sides of the distal end portions of the first cathodes 11a and 11b in the first film forming portion P1 of the first film forming region F1, The first cylindrical auxiliary magnetic field space in which the periphery from one first target 10a to the periphery of the other first target 10b is connected in a cylindrical shape and the magnetic field lines are directed from the periphery of one first target 10a to the periphery of the other first target 10b. Since t1 is formed, charged particles such as plasma protruding from the first curved magnetic field spaces W1 and W1 ′ on the first target facing surfaces 10a ′ and 10b ′ during sputtering and secondary electrons popping out are It is confined in the first cylindrical auxiliary magnetic field space t1.

  That is, since both ends of the cylindrical first cylindrical auxiliary magnetic field space t1 are arranged so as to be covered with the first targets 10a and 10b with the opposing surfaces 10a ′ and 10b ′ inside, respectively, the first target surface (Opposite surfaces) The plasma that protrudes from the first curved magnetic field spaces W1 and W1 ′ formed in 10a ′ and 10b ′ is confined by the first cylindrical auxiliary magnetic field space t1 (prevents from protruding to the substrate side), The influence on the substrate B by the plasma or the like can be reduced.

  In addition, charged particles such as secondary electrons that jump out from the first curved magnetic field spaces W1 and W1 ′ to the substrate B side are also charged particles that jump out to the substrate B side into the first cylindrical auxiliary magnetic field space t1. Confinement can be performed, and charged particles reaching the substrate B are reduced.

  In addition, since the first cathodes 11a and 11b are composite cathodes having the first cylindrical auxiliary magnetic field generating means 30a and 30b on the outer periphery of the tip of the magnetron cathode, the first cathodes 11a and 11b are subjected to first sputtering during the sputtering as in the magnetron cathode. Even if the current value to be applied to the cathodes (composite cathodes) 11a and 11b is increased, a phenomenon in which plasma concentrates in the central portion as in the case of the opposed target cathode appears and the discharge does not become unstable, and the target surface 10a Plasma formed in the vicinity of ', 10b' can be stably discharged for a long time.

  Further, since the magnetic field strength in the first cylindrical auxiliary magnetic field space t1 is larger than that in the first curved magnetic field spaces W1 and W1 ′, the magnetic field strength in the vicinity of the opposed surfaces 10a ′ and 10b ′ is the first targets 10a and 10b. Can be obtained such that the center side of the first target 10a, 10b and the periphery of the first target 10a, 10b are strongest, and the plasma protruding from the curved magnetic field spaces W1, W1 ′ into the first cylindrical auxiliary magnetic field space t1 can be obtained. The confinement effect and the confinement effect of charged particles such as the ejected secondary electrons are improved.

  Therefore, without reducing the distance between the centers of the pair of first targets 10a and 10b, the influence of plasma on the substrate B to be deposited and the secondary flying from the sputtering surfaces (opposing surfaces) 10a ′ and 10b ′. The influence of charged particles such as electrons can be extremely reduced. Further, if the film quality is comparable to the film quality of a thin film formed by sputtering that does not generate the first cylindrical auxiliary magnetic field space t1, the angle formed between the opposing surfaces 10a ′ and 10b ′ of the pair of first targets 10a and 10b. θ can be made larger.

  Accordingly, in the first film forming unit P1, the first cathodes (composite V-type cathodes) 11a and 11b are set such that the angle θ formed by the opposing surfaces 10a ′ and 10b ′ of the pair of first targets 10a and 10b is small. By using the sputtering, the confinement effect of plasma generated by sputtering and charged particles in the first inter-target space K1 is greatly improved. Therefore, although the film formation rate is slow, low temperature and low damage film formation can be performed on the film formation surface B ′ of the substrate B, and an initial layer (first layer) having a predetermined thickness can be formed. it can.

  Then, the substrate holder 3 is moved from the first film formation position L1 of the first film formation unit P1 to the second film formation unit P2 without changing the sputtering conditions that take time to change the conditions such as the pressure in the vacuum vessel 2. 2 by moving to the film forming position L2, in the second film forming unit, the angle θ formed by the opposing surfaces 110a ′ and 110b ′ of the pair of second targets 110a and 110b is set to θ2 larger than θ1. Sputtering using the cathodes 111a and 111b increases the effect of charged particles such as secondary electrons flying to the substrate B side and plasma, but the second layer is formed in a short time by increasing the film formation rate. (Formation).

  As described above, since the initial layer is formed on the substrate B by the low temperature / low damage film formation in the first film formation part P1, the formed initial layer serves as a protective layer, and therefore the second film formation part P2 In order to shorten the film formation time, the influence of plasma on the substrate B side and the flying of charged particles such as secondary electrons increase. The layer) can be formed while suppressing the influence of the plasma and damage to the substrate B by charged particles such as secondary electrons. Further, when the second layer is formed after the initial layer is formed, it is not necessary to change the sputtering conditions such as the pressure in the vacuum vessel 2, and the substrate holder 3 is formed from the first film forming unit P1 to the second film. Since it is only necessary to move it to the position P2, it is possible to shorten the film formation time (total time of the film formation process). In particular, when a thin film is continuously formed on a plurality of substrates B, B,... (Deposition processing), it is not necessary to change the sputtering conditions such as the pressure in the vacuum vessel for each substrate B. Since the substrates B, B,... Need only be sequentially transported to the first and second film forming units by the substrate holder 3 one after another under the condition of the constant sputtering condition, a plurality of substrates B, B,. The film formation time for ... can be greatly shortened.

  As a result, it is possible to form a film on a substrate B that requires low-temperature, low-damage film formation, and shorten the film formation time even when a plurality of substrates B, B,. Can be planned.

  Next, a second embodiment of the present invention will be described with reference to FIG. In the second embodiment, the same configuration as that of the first embodiment is indicated using the same reference numerals in FIG. 4 and a part of the description is omitted, and a configuration different from that of the first embodiment will be described.

  The sputtering apparatus 1 ′ includes a vacuum container (chamber) 2 having an internal space S, and a first film forming unit P1 and a second film forming unit P1 for forming a film on a film forming surface B ′ of a substrate B that is a film forming target. In the state where the film forming unit P′2 and the substrate B are held, at least from the first film forming position L1, which is the film forming position on the substrate B in the first film forming unit P1, in the second film forming unit P′2. A substrate holder 3 that can move in the vacuum container 2 (arrow A) to a second film formation position L′ 2, which is a film formation position on the substrate B, is provided.

  In addition, the sputtering apparatus 1 ′ includes a first power supply 4a for supplying sputtering power to the first film forming unit P1, and a second power source for supplying sputtering power to the second film forming unit P′2. A power supply 4′b for supplying sputtering power, an exhaust device 5 for exhausting the inside of the vacuum vessel 2 (internal space S), and a sputtering gas supply device 6 for supplying a sputtering gas into the vacuum vessel 2 are provided. . The vacuum vessel 2 may include a reactive gas supply device 7 for supplying a reactive gas in the vicinity of the substrate B.

  The vacuum vessel 2 is connected to other process chambers or load lock chambers 9 and 9 'via communication passages (substrate transfer line valves) 8 and 8' on both sides of the substrate holder 3 side (lower end side in the figure). ing.

  The internal space S of the vacuum vessel 2 includes a first film formation region F1 for disposing the first film formation unit P1, and a second film formation region F2 for disposing the second film formation unit P′2. The first film forming unit P1 and the second film forming unit P′2 are arranged in parallel.

  The second film forming unit P′2 includes a second cathode (second target holder) 111 ′ having a second target 110 ′ at the tip, and the second cathode 111 ′ is a surface 110 ′ of the second target 110 ′. a ′ is disposed so as to face the film-forming surface B ′ of the substrate B located at the second film-forming position L ′ 2 in parallel.

  The second cathode (second target holder) 111 ′ is fixed to the tip of the second cathode 111 ′ via a backing plate 112 ′ in the same manner as the first cathodes 11a and 11b in the first film forming unit P1. A second target 110 ′ and a second curved magnetic field generating means 120 ′ that is disposed on the back side of the backing plate 112 ′ and generates a magnetic field space curved in an arc shape on the second target surface 110′a ′ side. Prepare. The second bending magnetic field generation means 120 ′ is configured in the same manner as the second bending magnetic field generation means 120a in the first embodiment, and an inward bending magnetic field space W′2 ′ is formed on the second target surface 110′a ′ side. Form.

  In the second and other embodiments described later, a cathode in which a magnetron cathode is disposed so that the surface of a target provided in the magnetron cathode is parallel to the film-forming surface B ′ of the substrate B is referred to as a “parallel plate magnetron cathode. May be called.

  In the present embodiment, the second target 110 ′ is made of an indium tin alloy as in the first embodiment. The size of the second target 110 ′ is a rectangular plate-like body having a width of 125 mm × length of 300 mm × thickness of 5 mm. The second target 110 ′ is formed on the deposition surface B ′ of the substrate B when the substrate B is positioned at the second deposition position L ′ 2 in the second deposition unit P ′ 2 in the vacuum container 2. The surface (surface to be sputtered) 110′a ′ is arranged to be a predetermined distance from the film formation surface B ′.

  As described above, the second cathode 111 ′ is configured in the same manner as the cathode obtained by removing the second cylindrical auxiliary magnetic field generating unit 130 a from the second cathode 111 a in the second film forming unit P <b> 2 of the first embodiment. The first film forming unit P1 and the second film forming unit P′2 are arranged in parallel in the vacuum container 2. Specifically, the first cathodes 11 a and 11 b of the first film forming unit P 1 and the second cathode 111 ′ of the second film forming unit P ′ 2 are arranged in parallel in the vacuum vessel 2. More specifically, a pair of first targets 10a in which the centers T1a, T1b, and T′2 of the first and second targets 10a, 10b, and 111 ′ are located on the same line and are opposed to each other at an inclination. , 10b and the surface 110′a ′ of the second target 110 ′ are arranged side by side so as to be orthogonal or substantially orthogonal.

  The second film formation position L′ 2 is located on a line connecting the other process chambers 9 and 9 ′ connected to both sides of the vacuum vessel 2. Specifically, the second film formation position L′ 2 is such that when the substrate holder 3 holding the substrate B is disposed, the film formation surface B ′ of the substrate B is positioned in front of the second target 110 ′. The surface 110′a ′ and the film formation surface B ′ face each other in parallel, and the distance between the center T′2 and the center of the film formation surface B ′ on the surface 110′a ′ of the second target 110 ′ is e ′. The position is such that 2 = 175 mm (= e1). In the present embodiment, the arrangement is made such that e′2 = e1, but the present invention is not limited to this, and e′2 and e1 may be set to different values.

  The second inert gas introduction pipes 6 ″ and 6 ″ are provided in the vicinity of the substrate B side of the second target 110 ′, and the second inert gas introduction pipe 6 ″, 6 ″ is not connected to the surface 110′a ′ of the second target 110 ′ from the sputter gas supply device 6. An active gas can be introduced.

  The sputtering apparatus 1 ′ according to the present embodiment has the above-described configuration. Next, an operation for forming a thin film in the sputtering apparatus 1 ′ will be described.

  First, as in the first embodiment, when the initial layer is formed, the substrate B is held by the substrate holder 3, and in this state, the substrate holder 3 is moved to the first film formation position L1 (the substrate B drawn by a solid line in FIG. 4). And the position of the substrate holder 3), the vacuum vessel (chamber) 2 is evacuated by the exhaust device 5, and the first inert gas introduction pipe 6 ′ and the second inert gas are introduced into the vacuum vessel 2 by the sputtering gas supply device 6. Argon gas (Ar) is introduced from the active gas introduction pipes 6 ″ and 6 ″ to a predetermined sputtering operation pressure (0.4 Pa in this embodiment).

  Thereafter, as in the first embodiment, a thin film is formed (film formation) on the substrate B in the first film formation portion P1. That is, an initial thin film layer is formed on the substrate B by low temperature / low damage film formation. Also in this embodiment, the initial layer is formed so as to have a thickness of about 10 to 20 nm.

  Next, before forming the second layer, the sputtering in the first film forming part P1 is stopped. Thereafter, the substrate holder 3 is moved by the moving means from the first film formation position L1 to the second film formation position L′ 2 while holding the substrate B having the initial layer formed on the film formation surface B ′. . After the substrate holder 3 moves to the second film formation position L′ 2, sputtering is started in the second film formation unit P′2 to form the second layer. At this time, since the sputtering conditions such as the pressure in the vacuum vessel 2 do not need to be changed as in the first embodiment, the substrate holder 3 is moved from the first film formation position L1 to the second film formation position L′ 2. Sputtering can be started immediately.

  In the second film forming unit P′2, the sputtering power is supplied to the second target 110 ′ by the second sputtering power supply power source 4′b. At this time, since the second bending magnetic field generation means 120 ′ is configured by the permanent magnet, the second bending magnetic field generation means 120 ′ forms the second bending magnetic field space W ′ on the surface 110′a ′ of the second target 110 ′. 2 'is formed.

  Then, plasma is formed in the second curved magnetic field space W'2 ', the surface 110'a' of the second target 110 'is sputtered, and (second) sputtered particles are scattered.

  In this way, the sputtered particles (second sputtered particles) that have jumped out (struck out) from the sputter surface (front surface) 110′a ′ of the second target 110 ′ are moved to the second target 110 at the second film position L′ 2. A thin film (second layer of the thin film) is formed by adhering to the substrate B arranged so as to face the “surface 110 ′ a” of “′” in parallel.

  At this time, the second cathode 111 ′ in the second film forming portion P′2 is a parallel flat plate opposed so that the surface 110′a ′ of the second target 110 ′ is parallel to the film formation surface B ′ of the substrate B. This is the magnetron cathode 111 ′. In general, the magnetron cathode has a magnetic field strength (curved magnetic field space) formed on the target surface side so that the magnetic field strength at the center of the target is reduced. Charged particles such as secondary electrons are easily ejected (protruded). Therefore, at the second film formation position P′2, the influence of the plasma from the parallel plate magnetron cathode 111 ′ to the substrate B side and the amount of charged charged particles increase.

  However, as described above, the parallel plate magnetron cathode 111 ′ is arranged so that the surface 110 ′ a ′ of the second target 110 ′ faces the film formation surface B ′ of the substrate B in parallel. Therefore, the amount of sputtered particles that are sputtered and scattered by the sputter surface (surface) 110′a ′ to reach the substrate B (film formation surface B ′) is arranged such that the sputter surface is inclined with respect to the substrate B. Since the number is much larger than the target (so-called V-type counter-arranged target), the film forming speed is significantly increased.

  In this way, in the second film forming unit P′2, the film formation rate is made faster than that during the film formation of the initial layer, and the second layer is formed on the initial layer. In the present embodiment, the second layer is formed to a thickness of about 100 to 150 nm.

  As described above, when the initial layer (first layer) and the second layer are sequentially formed on the deposition surface B ′ by the composite V-type cathodes 11a and 11b and the parallel plate-type magnetron cathode 111 ′, If the input powers to the 1 target 10a, 10b and the second target 110 ′ are the same, the film formation speed during the second layer film formation is about 80% to 100% compared to the film formation speed during the first layer film formation. Can be increased. Furthermore, by increasing the input power to the parallel plate magnetron cathode 111 ′, it is possible to realize a film formation rate of three times or more.

  As described above, in the first film forming portion P1, the first curved magnetic field formed on the first target surfaces (opposing surfaces) 10a ′ and 10b ′ by using the composite V-type cathodes 11a and 11b as in the first embodiment. The confinement effect of the plasma protruding from the spaces W1 and W1 ′ and the charged particles protruding to the substrate B side is greatly improved.

  Further, in the composite V-type cathodes 11a and 11b, even if the current value supplied to the composite cathodes 11a and 11b during sputtering is increased, the phenomenon that the plasma is concentrated at the center portion appears and the discharge does not become unstable. The plasma formed in the vicinity of the target surfaces 10a ′ and 10b ′ can be stably discharged for a long time.

  Furthermore, since the magnetic field strength of the outer magnetic field space (first cylindrical auxiliary magnetic field space) t1 is larger than that of the first curved magnetic field space W1, W1 ′, it is more effective in the first cylindrical auxiliary magnetic field space t1. It becomes possible to confine charged particles such as plasma and secondary electrons.

  Therefore, as in the first embodiment, in the first film forming unit P1, the first cathode (composite V) in which the angle θ formed by the opposed surfaces 10a ′ and 10b ′ of the pair of first targets 10a and 10b is set to a small angle θ1. Sputtering using the type cathodes 11a and 11b greatly improves the confinement effect of plasma and charged particles generated by sputtering in the first inter-target space K1. Therefore, although the film formation rate is slow, low temperature and low damage film formation can be performed on the film formation surface B ′ of the substrate B, and an initial layer (first layer) having a predetermined thickness can be formed. it can.

  Then, the substrate holder 3 is moved from the first film forming position L1 of the first film forming unit P1 to the second film forming unit P′2 without changing the sputtering conditions that take time to change the conditions such as the pressure in the vacuum vessel 2. To the second film-forming position L′ 2. Then, in the second film forming part P′2, by using the parallel plate magnetron cathode 111 ′ for sputtering, the influence of charged particles such as secondary electrons flying to the substrate B side or the plasma increases, but the film formation is performed. The second layer can be formed (formed) in a short time by increasing the speed.

  As described above, as in the first embodiment, in the first film forming unit P1, the second layer is formed by forming an initial layer on the substrate B by low temperature / low damage film formation, and using the formed initial layer as a protective layer. In the film part P′2, it is possible to form a film while suppressing the influence of the charged particles such as secondary electrons on the substrate B when forming the second layer and the influence of plasma or the like on the substrate B. become. Further, as in the first embodiment, when the second layer is formed, it is not necessary to change the sputtering conditions such as the pressure in the vacuum vessel 2, and the substrate holder 3 is moved from the first film formation portion P1 to the second film formation position. Since it is only necessary to move to P′2, the film formation time (total time of the film formation process) can be shortened. In particular, a thin film is continuously formed on a plurality of substrates B, B,. When performing (deposition processing), it is not necessary to change the sputtering conditions such as the pressure in the vacuum vessel for each substrate B, and the substrates B, B,. Since the substrate holder 3 only needs to be successively transferred to the first and second film forming units, the film forming time for a plurality of substrates B, B,... Can be greatly shortened.

  As a result, it is possible to form a film on a substrate B that requires low-temperature, low-damage film formation, and shorten the film formation time even when a plurality of substrates B, B,. Can be planned.

  Next, a third embodiment of the present invention will be described with reference to FIG. In the third embodiment, the same configuration as that of the first or second embodiment is indicated by using the same reference numerals in FIG. 5 and a part of the description is omitted, and the configuration is different from that of the first and second embodiments. explain.

  The sputtering apparatus 1 ″ includes a vacuum container (chamber) 2 having an internal space S, and a first film forming unit P1 and a second film forming unit P1 for forming a film on a film forming surface B ′ of a substrate B that is a film forming target. In the state where the film forming unit P ″ 2 and the substrate B are held, at least from the first film forming position L1, which is the film forming position on the substrate B in the first film forming unit P1, in the second film forming unit P ″ 2. A substrate holder 3 that can move in the vacuum container 2 (in the direction of arrow A) to a second film formation position L ″ 2 that is a film formation position on the substrate B is provided.

  The sputtering apparatus 1 ″ includes a first sputtering power supply power source 4a for supplying sputtering power to the first film forming unit P1, and a second for supplying sputtering power to the second film forming unit P ″ 2. A sputtering power supply power source 4 ″ b, an exhaust device 5 for exhausting the inside of the vacuum vessel 2 (internal space S), and a sputtering gas supply device 6 for supplying a sputtering gas into the vacuum vessel 2 are provided. The vacuum vessel 2 may include a reactive gas supply device 7 for supplying a reactive gas in the vicinity of the substrate B.

  The vacuum vessel 2 is connected to other process chambers or load lock chambers 9 and 9 'via communication passages (substrate transfer line valves) 8 and 8' on both sides of the substrate holder 3 side (lower end side in the figure). ing.

  The internal space S of the vacuum container 2 includes a first film formation region F1 for disposing the first film formation unit P1, and a second film formation region F2 for disposing the second film formation unit P ″ 2. The first film forming part P1 and the second film forming part P ″ 2 are arranged in parallel.

  The second film forming unit P ″ 2 includes second cathodes (second target holders) 111 ″ a and 111 ″ b having second targets 110 ″ a and 110 ″ b at the tips, respectively, and the second cathode 111 ″. a, 111 ″ b are the deposition surfaces B ′ of the substrate B where the surfaces 110 ″ a ′, 110 ″ b ′ of the second targets 110 ″ a, 110 ″ b are located at the second deposition position L ″ 2. Are arranged in parallel so as to be parallel or substantially parallel to each other.

  Similarly to the first cathode 11a, the second cathode (second target holder) 111 ″ a, 111 ″ b is provided with a backing plate 112 ″ a, 112 ″ b at the tip of the second cathode 111 ″ a, 111 ″ b. The second targets 110 ″ a, 110 ″ b fixed via the back surface and the back surfaces of the backing plates 112 ″ a, 112 ″ b and the second target surfaces 110 ″ a ′, 110 ″ b ′ side Second curved magnetic field generation means 120 "a, 120" b. The second bending magnetic field generation means 120 ″ a, 120 ″ b is configured in the same manner as the second bending magnetic field generation means 120a in the first embodiment, and the second target surface 110 ″ a ′, 110 ″ b ′. An inward bending magnetic field space is formed on the side.

  In the third embodiment, a pair of parallel plate magnetron cathodes are arranged side by side so that the target surfaces are in the same plane and face the same direction, and an AC power supply having a 180 ° phase shift described later is connected to each parallel plate magnetron cathode. The connected cathode may be referred to as a “dual magnetron cathode”.

  In the present embodiment, the second targets 110 ″ a and 110 ″ b are made of an indium tin alloy as in the first embodiment. The sizes of the second targets 110 ″ a and 110 ″ b are each formed in a rectangular plate-like body having a width of 125 mm × a length of 300 mm × a thickness of 5 mm. The second targets 110 ″ a and 110 ″ b are placed on the substrate B when the substrate B is positioned at the second film formation position L ″ 2 in the second film formation portion P ″ 2 in the vacuum vessel 2. Arranged in parallel or substantially parallel to the film-forming surface B ′ (slightly facing the direction of the substrate B), the surfaces (surfaces to be sputtered) 110 ″ a ′ and 110 ″ b ′ are predetermined from the film-forming surface B ′. Are arranged at a distance of.

  As described above, the second cathodes 111 ″ a and 111 ″ b are excluded from the second cathodes 111a and 111b in the second film forming unit P2 of the first embodiment except for the second cylindrical auxiliary magnetic field generation means 130a and 130b. The same configuration as that in which the angle θ2 formed by the opposing surfaces (surfaces) 110a ′ and 110b ′ is 180 ° (however, the second bending magnetic field generating means of the second cathodes 111 ″ a and 111 ″ b are both in the first embodiment). The configuration is the same as that of the embodiment 120a. The first film forming unit P1 and the second film forming unit P ″ 2 are arranged in parallel in the vacuum container 2. Specifically, the first cathodes 11a and 11b of the first film forming unit P1 and the first film forming unit P ″ 2 are arranged in parallel. The second cathodes 111 ″ a, 111 ″ b of the two film forming portions P ″ 2 are arranged in parallel in the vacuum vessel 2 in a line. More specifically, a pair of first targets in which the centers T1a, T1b, T ″ 2a, and T ″ 2b of the first and second targets 10a and 10b are located on the same line and are inclined and arranged to face each other. The first central plane C1 of 10a, 10b and the surfaces 110 ″ a ′, 110 ″ b ′ of the second targets 110 ″ a, 110 ″ b are arranged side by side so as to be orthogonal or substantially orthogonal.

  The second film formation position L ″ 2 is located on a line connecting the other process chambers 9 and 9 ′ connected to both sides of the vacuum vessel 2. Specifically, the second film formation position L ″ 2 is When the substrate holder 3 holding the substrate B is disposed, the deposition surface B ′ of the substrate B is a position facing the middle between the second targets 110 ″ a and 110 ″ b arranged side by side and the surface 110. "A ', 110" b' and the film-forming surface B 'face each other in parallel, and the centers T "2a of the surfaces 110" a', 110 "b 'of the second targets 110" a, 110 "b The position is such that the shortest distance between T ″ 2b and the extended surface of the film formation surface B ′ is e ″ 2 = 175 mm (= e1).

  The second sputtering power supply power supply 4 ″ b is an AC (alternating current) power supply that can apply an alternating electric field that is 180 ° out of phase to the second cathodes 111 ″ a and 111 ″ b.

  The second inert gas introduction pipes 6 ″, 6 ″, 6 ″, 6 ″ are provided near the substrate B side of the second targets 110 ″ a, 110 ″ b, respectively, and the second targets 110 ″ a, 110 An inert gas can be introduced in the vicinity of the surfaces 110 "a 'and 110" b' of "b".

  The sputtering apparatus 1 ″ according to the present embodiment has the above-described configuration. Next, an operation for forming a thin film in the sputtering apparatus 1 ″ will be described.

  First, as in the first embodiment, when the initial layer is formed, the substrate B is held by the substrate holder 3, and in this state, the substrate holder 3 is moved to the first film formation position L1 (the substrate B drawn by the solid line in FIG. 5). And the position of the substrate holder 3), the vacuum vessel (chamber) 2 is evacuated by the exhaust device 5, and the first inert gas introduction pipe 6 ′ and the second inert gas are introduced into the vacuum vessel 2 by the sputtering gas supply device 6. Argon gas (Ar) is introduced from the active gas introduction pipes 6 ″, 6 ″, 6 ″, 6 ″ to obtain a predetermined sputtering operation pressure (0.4 Pa in this embodiment).

  Thereafter, as in the first embodiment, a thin film is formed (film formation) on the substrate B in the first film formation portion P1. That is, an initial thin film layer is formed on the substrate B by low temperature / low damage film formation. Also in this embodiment, the initial layer is formed so as to have a thickness of about 10 to 20 nm.

  Next, before forming the second layer, the sputtering in the first film forming part P1 is stopped. Thereafter, the substrate holder 3 is moved by the moving means from the first film formation position L1 to the second film formation position L ″ 2 while holding the substrate B having the initial layer formed on the film formation surface B ′. After the substrate holder 3 has moved to the second film formation position L ″ 2, sputtering is started in order to form the second layer in the second film formation part P ″ 2. At this time, the pressure in the vacuum vessel 2 is increased. Since it is not necessary to change the sputtering conditions such as the first embodiment, the sputtering can be started immediately after the substrate holder 3 is moved from the first film formation position L1 to the second film formation position L ″ 2. .

  In the second film forming unit P ″ 2, an AC electric field that is 180 ° out of phase is applied to the second cathodes 111 ″ a and 111 ″ b by the second sputtering power supply power source 4b. Since the two curved magnetic field generating means 120 ″ a, 120 ″ b are configured, the surface 110 ″ a ′ of the second target 110 ″ a, 110 ″ b by the second curved magnetic field generating means 120 ″ a, 120 ″ b. , 110 ″ b are formed with second bending magnetic field spaces (inward bending magnetic field spaces) W ″ 2 ′ and W ″ 2 ′, respectively.

  Then, plasma is formed in the second curved magnetic field spaces W ″ 2 ′ and W ″ 2 ′, and the surfaces 110 ″ a ′ and 110 ″ b ′ of the second targets 110 ″ a and 110 ″ b are sputtered, respectively. The (second) sputtered particles are scattered.

  At this time, an alternating electric field that is 180 degrees out of phase is applied to each of the second cathodes 111 ″ a and 111 ″ b, whereby a negative potential is applied to one second target 110 ″ a (second cathode 111 ″ a). Is applied to the other second target 110 ″ b (second cathode 111 ″ b) by applying a positive potential or ground potential to the other second target 110 ″ b (second cathode 111). "B) plays the role of an anode, whereby one second target 110" a (second cathode 111 "a) to which a negative potential is applied is sputtered. Further, when a negative potential is applied to the other second target 110 ″ b, a positive potential or a ground potential is applied to the one second target 110 ″ a, whereby the one second target 110 ″. a serves as an anode, and the other second target 110 "b is sputtered. In this way, by alternately switching the target (cathode) applied potential, there is no charge-up of the oxide and nitride on the target surface, and stable discharge is possible for a long time.

  Thus, the sputtered particles (second sputtered particles) that have jumped out (struck out) from the sputter surfaces (front surfaces) 110 ″ a ′, 110 ″ b of the second targets 110 ″ a, 110 ″ b are moved to the second film position L. “2” is attached to the deposition surface B ′ arranged so as to face the surfaces 110 ″ a ′ and 110 ″ b ′ of the second targets 110 ″ a and 110 ″ b in parallel or substantially in parallel. A thin film (second layer of the thin film) is formed.

  At this time, the surfaces 110 ″ a ′ and 110 ″ b ′ of the second targets 110 ″ a and 110 ″ b in the second film forming unit P ″ 2 are the second surfaces of the second film forming unit P′2 in the second embodiment. Like the two cathodes 111 ′, they face each other so as to be parallel or substantially parallel to the film formation surface B ′ of the substrate B. Therefore, at the second film formation position P ″ 2, the plasma to the substrate B side is opposed. Although the influence and the amount of flying charged particles increase, the amount by which the sputtered particles (sputtering surfaces 110′a ′, 110 ″ b ′) are sputtered and scattered to reach the substrate B (deposition surface B ′). However, since the number of targets is extremely large as compared with the target arranged with the sputtering surface inclined with respect to the substrate B, the film forming speed is remarkably increased.

  In this manner, in the second film forming portion P ″ 2, the second layer is formed on the initial layer at a higher film formation rate than that at the time of forming the initial layer. The two layers are formed to a thickness of about 100 to 150 nm.

  As described above, the initial layer (first layer) and the second layer are sequentially formed on the deposition surface B ′ by the composite V-type cathodes 11a and 11b and the dual magnetron cathodes 111 ″ a and 111 ″ b. In this case, if the input power to the first targets 10a and 10b and the second targets 110 ″ a and 110 ″ b is the same, the film formation speed during the second layer film formation is the same as the film formation speed during the first layer film formation. About 40% to 50%. Furthermore, by increasing the input power to the dual magnetron cathodes 111 ″ a, 111 ″ b, it is possible to realize a film formation rate of twice or more.

  As described above, in the first film forming portion P1 of the third embodiment, the composite V-type cathodes 11a and 11b are used to form the first target surfaces (opposing surfaces) 10a ′ and 10b ′ as in the first embodiment. The confinement effect of the plasma that protrudes from the first curved magnetic field spaces W1 and W1 ′ and the charged particles that jump out to the substrate B side is greatly improved.

  Further, in the composite V-type cathodes 11a and 11b, even if the current value supplied to the composite cathodes 11a and 11b during sputtering is increased, the phenomenon that the plasma is concentrated at the center portion appears and the discharge does not become unstable. The plasma formed in the vicinity of the target surfaces 10a ′ and 10b ′ can be stably discharged for a long time.

  Furthermore, since the magnetic field strength of the outer magnetic field space (first cylindrical auxiliary magnetic field space) t1 is larger than that of the first curved magnetic field space W1, W1 ′, it is more effective in the first cylindrical auxiliary magnetic field space t1. It becomes possible to confine charged particles such as plasma and secondary electrons.

  Therefore, as in the first and second embodiments, in the first film forming unit P1, the first cathode in which the angle θ formed by the opposed surfaces 10a ′ and 10b ′ of the pair of first targets 10a and 10b is set to a small angle θ1. Sputtering using the (composite V-type cathode) 11a and 11b greatly improves the confinement effect of plasma and charged particles generated by sputtering in the first inter-target space K1. Therefore, although the film formation rate is slow, low temperature and low damage film formation can be performed on the film formation surface B ′ of the substrate B, and an initial layer (first layer) having a predetermined thickness can be formed. it can.

  Then, the substrate holder 3 is moved from the first film formation position L1 of the first film formation part P1 to the second film formation part P ″ 2 without changing the sputtering conditions that take time to change the conditions such as the pressure in the vacuum vessel 2. To the second deposition position L ″ 2. Then, by using the dual magnetron cathodes 111 ″ a and 111 ″ b for sputtering in the second film forming part P ″ 2, the influence of charged particles such as secondary electrons flying on the substrate B side and the plasma increase. However, the second layer can be formed (formed) in a short time by increasing the film formation rate.

  As described above, as in the first embodiment, in the first film forming unit P1, the second layer is formed by forming an initial layer on the substrate B by low temperature / low damage film formation, and using the formed initial layer as a protective layer. In the film part P ″ 2, it is possible to form a film while suppressing damage to the substrate B caused by charged particles such as secondary electrons and the influence of plasma or the like on the substrate B when forming the second layer. Furthermore, when the second layer is formed, it is not necessary to change the sputtering conditions such as the pressure in the vacuum vessel 2, and the substrate holder 3 is moved from the first film formation portion P1 to the second film formation position P ″ 2. Since it is only necessary to move the film, it is possible to shorten the film formation time (total time of the film formation process). In particular, when a thin film is continuously formed on a plurality of substrates B, B,... (Deposition processing), it is not necessary to change the sputtering conditions such as the pressure in the vacuum vessel for each substrate B. Since the substrates B, B,... Need only be sequentially transported to the first and second film forming units by the substrate holder 3 one after another under the condition of the constant sputtering condition, a plurality of substrates B, B,. The film formation time for ... can be greatly shortened.

  As a result, it is possible to form a film on a substrate B that requires low-temperature, low-damage film formation, and shorten the film formation time even when a plurality of substrates B, B,. Can be planned.

  Note that the sputtering method and the sputtering apparatus of the present invention are not limited to the first to third embodiments, and it goes without saying that various changes can be made without departing from the scope of the present invention.

  In the above embodiment, the first film formation region P1 and the second film formation region P2 (P′2, P ″ 2) each have one in each of the first film formation region F1 and the second film formation region F2. However, the present invention is not limited to this, that is, as shown in Fig. 6, a plurality of first film forming portions P1, P1, ... are arranged in parallel in the first film forming region F1. As shown in FIGS. 6 to 8, a plurality of second film forming portions P2, P2,... (P′2, P′2,... Or P ″ 2, P ″ 2 are formed in the second formation region F2. In this way, a plurality of film forming units are arranged in parallel in the first or second film forming regions F1 and F2, so that a thin film is formed on the substrate B by the plurality of film forming units. Therefore, the film formation speed can be increased without increasing the influence of plasma or damage caused by charged particles on the substrate B. In this case, the substrate holder 3 The film-forming surface B ′ to be held moves on a trajectory so as to always face between the opposing targets (a pair of targets) or in parallel with the target surface direction facing in parallel. They are arranged in parallel at a predetermined interval on a straight line or a curve connecting the process chambers 9 and 9 '.

  Further, when a film is formed on the substrate B in the first or second film formation region F1 or F2 in which a plurality of film formation units are arranged in parallel, the long substrate B is moved in the moving direction A ′ (in parallel with the film formation units). 9), the substrate holder 3 may be attached to the substrate holder 3 in a direction perpendicular to the longitudinal direction, and sputtering (film formation) may be performed while the substrate holder 3 is moved. Also, as shown in FIG. B may be sputtered by attaching B to the substrate holder 3 ′ in the direction in which the longitudinal direction is along the moving direction (the direction in which the film forming parts are arranged side by side). In this case, as described above, sputtering may be performed while the substrate holder 3 is moved, or sputtering may be performed in a stopped state. Even if it does in this way, since it sputter | spatters simultaneously by several film-forming part, without increasing the damage by the plasma and charged particle with respect to the board | substrate B, it can aim at the film-forming speed | rate and can aim at the improvement of productivity. .

  In the first embodiment, the second film formation region F2 (second film formation part P2) uses the composite V-type cathodes 111a and 111b. However, the present invention is not limited to this, and the cylindrical auxiliary magnetic field is not limited thereto. Even when a simple magnetron cathode that does not include the generating means 130a and 130b and a V-type opposed cathode is used, film formation at a higher film formation speed than the first film formation region F1 may be performed. That is, in the first film formation region F1, the initial layer is formed on the substrate B by low-temperature and low-damage film formation, so that the influence of plasma or charged particles in the film formation in the second film formation region F2. Even if the value increases, the initial layer serves as a protective layer (bulletproof vest), so that no damage is transmitted to the substrate B. Therefore, even in the case of the substrate B that is easily damaged by plasma and charged particles, the influence of the plasma and charged particles on the substrate side is considered in order to improve productivity in the film formation in the second film formation region F2. The film formation rate can be increased without any problems.

  In the above embodiment, the power applied to the cathodes 10a and 10b in the first film forming part P1 in the first film forming region F1 is an AC power source, specifically, as shown in FIG. Even in an AC (alternating current) power supply 4′a that can apply an alternating electric field that is 180 ° out of phase to each of a pair of targets (cathodes) as used in the second film forming unit P ″ 2 in the embodiment. Good.

This is because when a dielectric thin film such as an oxide or nitride is produced (for example, as a protective film or sealing film for an organic EL element), a reactive gas (O ₂ , N _2, etc.) is applied to the substrate B. (Or between the targets 10a and 10b) The reactive gas introduction pipes 7 'and 7' disposed in the vicinity are introduced toward the substrate B, and the sputtered particles flying from the targets 10a and 10b react with the reactive gas. In this reactive sputtering, the surfaces 10a ′ and 10b ′ of the targets 10a and 10b are oxidized, and an adhesion preventing plate, Reaction products of oxides and nitrides adhere to the non-erosion regions of the earth shield and the targets 10a and 10b, abnormal arc discharge frequently occurs, and stable discharge cannot be performed. In addition, the quality of the film deposited on the substrate B is deteriorated. Furthermore, in the case of producing an ITO film with an ITO target as a transparent conductive film, a small amount of O ₂ gas is introduced and sputtered in order to produce a high-quality ITO film. If you do, the same phenomenon will appear.

  The cause of the occurrence of such an abnormal arc discharge is that the target surfaces 10a ′ and 10b ′ are charged with oxides and nitrides, and the earth shield, chamber wall, and deposition prevention plate that act as anodes for the targets 10a and 10b. Is covered with oxide or nitride, the anode area may be reduced or non-uniform.

  Therefore, in order to solve these problems, by adopting the above configuration, when a negative potential is applied to one target 10a, a positive potential or a ground potential is applied to the other target 10b. The target 10b serves as an anode, and as a result, one target 10a to which a negative potential is applied is sputtered. Further, when a negative potential is applied to the other target 10b, a positive potential or a ground potential is applied to the one target 10a, whereby the one target 10a serves as an anode, and the other target 10b. Is sputtered. In this way, by alternately switching the target (cathode) applied potential, there is no charge-up of the oxide and nitride on the target surface, and stable discharge is possible for a long time.

For example, when producing a transparent conductive film using an ITO target, it has low resistance (specific resistance 6 × 10 ⁻⁴ Ω · cm or less without substrate heating) and high transmittance (85% or more at 550 nm wavelength) and high quality When forming the film, ₂ to 5 sccm of O ₂ gas is introduced with respect to Ar 50 sccm. In this case, even if the discharge is performed for a long time, by alternately switching the potential applied to the pair of targets 10a and 10b by the AC power supply, the target surfaces 10a ′ and 10b ′ are not charged up due to oxidation, and each target 10a, Since 10b plays the role of a cathode and an anode mutually, stable discharge can be performed.

As another example, a Si target is used as a protective film and a sealing film for an organic EL element, and reactive sputtering is performed by introducing reactive gas O ₂ to produce a SiOx film. In this case, in the case of DC reactive sputtering using a normal DC power source, the number of abnormal arc discharges is higher than that in the case of ITO film production. Charge up due to oxidation of 10a ′ and 10b ′ is eliminated, and stable discharge can be performed for a long time.

  In the first embodiment, the electric power applied to the cathodes 110a and 110b in the second film forming part P2 in the second film forming region is also an alternating current that is 180 ° out of phase with the pair of targets 110a and 110b, respectively. An AC (alternating current) power supply 4′a to which an electric field can be applied may be used. By doing in this way, the same effect as the above arises also in the 2nd film-forming field F2.

  In the first embodiment, the same material is used for the pair of targets 10a and 10b (110a and 110b) in the first and second film forming portions P1 and P2 of the first and second film forming regions F1 and F2. For example, one target 10a (110a) may be made of Al, and the other target 10b (110b) may be made of Li. In this way, a composite film (in this case, a Li—Al film) is formed on the substrate B by changing the material. In this case, the film composition ratio of the composite film can be changed by connecting individual power supplies to the targets 10a and 10b (110a and 110b) and adjusting the input power individually.

  In the present embodiment, the substrate B is fixed at the time of film formation at the first or second film formation position L1, L2, but it is not necessary to be limited to this. That is, when the film formation area of the film formation surface B ′ of the substrate B is larger than the film forming area range of the sputtering apparatus, or in order to make the film thickness distribution of the formed film uniform, FIG. As shown, the film formation surface B ′ may be formed while moving along the TT selection (in the direction of arrow A). With this configuration, it is possible to form a film even on a long substrate B. As shown in FIG. 11B, the film formation surface B ′ is centered on the revolution center p set at a predetermined position on the center line P orthogonal to the center of the TT line, and the film formation surface. When B ′ becomes parallel to the TT line, it moves along the revolution orbit such that the distance between the center of the film formation surface B ′ and the middle of the TT line is the shortest distance e (arrow) α) may be configured. Even with this configuration, a uniform film can be formed on the long substrate B. Further, the movement direction (arrows A and α) of the film formation surface B ′ may move in one direction, or may reciprocate (or swing).

The schematic block diagram of the sputtering device which concerns on 1st Embodiment is shown. (B) of the bending magnetic field generating means in the sputtering apparatus according to the embodiment shows a cross-sectional view of a state in which a target is provided via a backing plate, (b) shows a front view, and (c) shows AA. A cross-sectional view is shown. (A) of the auxiliary magnetic field generating means in the sputtering apparatus according to the embodiment shows a front view, (b) shows a cross-sectional view along AA, (c) shows a cross-sectional view along BB, and (d) shows The partial expanded sectional view of an attachment state is shown. The schematic block diagram of the sputtering device which concerns on 2nd Embodiment is shown. The schematic block diagram of the sputtering device which concerns on 3rd Embodiment is shown. FIG. 2 is a schematic configuration diagram of a sputtering apparatus in which a plurality of first film forming units and second film forming units in the first embodiment are arranged in parallel in a first film forming region and a second film forming region, respectively. The schematic block diagram of the sputtering device which arranged the 2nd film-forming part in 2nd Embodiment in parallel in the 2nd film-forming area | region is shown. The schematic block diagram of the sputtering device which arranged the 2nd film-forming part in 3rd Embodiment in parallel in the 2nd film-forming area | region is shown. A sputtering apparatus in which a plurality of second film forming units in the second embodiment are arranged in the second film forming region, and the longitudinal direction of the long substrate is attached to the substrate holder so as to be along the direction of arranging the second film forming units. A schematic block diagram is shown. In 2nd Embodiment, the schematic block diagram of the sputtering device which connected the AC alternating current power supply which can apply the alternating electric field which respectively shifted 180 degrees to a pair of cathode of a 1st film-forming part is shown. (A) shows a schematic configuration diagram of a sputtering apparatus in which the film formation surface of the substrate moves along the line TT, and (b) shows a sputtering in which the film formation surface of the substrate moves along the revolution orbit. The schematic block diagram of an apparatus is shown.

Explanation of symbols

  1, 1 ', 1 "... Sputtering device, 2 ... Vacuum container (chamber), 3 ... Substrate holder, 4a, 4'a, 4b, 4'b, 4" b ... Power supply for sputtering power supply, 5 ... Exhaust device , 6 ... Sputter gas supply device, 6 ', 6 "... Inert gas introduction pipe, 7 ... Reactive gas supply device, 7', 7" ... Reactive gas introduction pipe, 8, 8 '... Communication path, 9, 9 '... other process chamber (or load lock chamber), 10a, 10b, 110a, 110b, 110', 110 "a, 110" b ... target, 10a ', 10b', 110a ', 110b', 110'a ', 110 "a', 110" b '... sputtering surface (opposite surface, surface), 11a, 11b, 111a, 111b, 111', 111 "a, 111" b ... cathode (target holder), 12a, 12b, 112a, 112b 112 ', 112 "a, 112" b ... backing plate, 20a, 20b, 120a, 120b, 120', 120 "a, 120" b ... bending magnetic field generating means, 21a, 21b, 121a, 121b, 121 ', 121 "A, 121" b ... frame-shaped magnet (permanent magnet), 22a, 22b, 122a, 122b, 122 ', 122 "a, 122" b ... central magnet (permanent magnet), 23a, 23b, 123a, 123b, 123 ', 123 "a, 123" b ... yoke, 30a, 30b, 130a, 130b ... cylindrical auxiliary magnetic field generating means (permanent magnet), B ... substrate, B' ... deposition surface, d1, d2 ... center of target Distance, F1 ... first film formation region, F2 ... second film formation region, K1, K2 ... space between targets (space), L1 ... first film formation position, L2, L'2, L "2 ... second Film formation P1, P1, P'2, P "2 ... Second film, S ... Internal space, T1a, T1b, T2a, T2b, T'2, T" 2a, T "2b ... center of target, t1, t2 ... cylindrical auxiliary magnetic field generating space, W1, W1 ', W2, W2', W'2, W "2, W" 2 '... curved magnetic field space

Claims (10)

The inner space is formed into a film in a vacuum container constituted by a first film formation region for disposing the first film formation unit and a second film formation region for disposing the second film formation unit. A first film forming unit and a second film forming unit for forming a film on an object are arranged side by side, and after forming a film on an object to be formed in the first film forming unit, a film is formed in the first film forming unit. The film formation target is moved from the first film formation position where the film object is formed to the second film formation position where the film formation target is formed in the second film formation unit, and the second film formation is performed. A sputtering method for forming a film on an object to be further formed at a portion,
In the first film formation unit, the pair of first targets is inclined toward the first film formation position where the surfaces thereof are opposed to each other with a space therebetween and the surfaces are located laterally between the first targets. And place
An inwardly curved magnetic field space is generated on the surface side of one first target so that the magnetic lines of force are arcuate from the outer peripheral part toward the central part, and the magnetic field lines are on the central part of the other first target. An outward curved magnetic field space that is arcuate from the outer periphery to the outer periphery is generated,
Furthermore, a cylindrical auxiliary magnetic field whose magnetic field lines are directed from the periphery of one first target to the periphery of the other first target, surrounds the first inter-target space formed between the first targets, and has a magnetic field strength larger than the bending magnetic field. Sputtering by generating a space, forming a film on an object to be deposited with the sputtered first sputtered particles,
In the second film forming unit, the inward or outward curved magnetic field space is generated on the surface side of the second target to perform sputtering, and the sputtered second sputtered particles are faster than the film forming rate in the first film forming unit. A sputtering method, wherein a film is formed on an object to be deposited at a deposition rate.   In the first film formation region, a plurality of the first film formation units are arranged side by side, and an object to be formed is formed sequentially or simultaneously in the plurality of first film formation units arranged in parallel. The sputtering method according to claim 1.   In the second film formation region, a plurality of the second film formation units are arranged side by side, and an object to be formed is formed sequentially or simultaneously in the plurality of second film formation units arranged in parallel. The sputtering method according to claim 1 or 2. The inner space is formed into a film in a vacuum container constituted by a first film formation region for disposing the first film formation unit and a second film formation region for disposing the second film formation unit. A first film forming unit and a second film forming unit for forming a film on the object are arranged in parallel, and a substrate holder for holding the film forming object is an object to be formed in the first film forming unit. It is possible to move from the first film forming position where the film is formed to the second film forming position where the film formation target object is formed in the second film forming unit while holding the film formation target object in the vacuum vessel. A sputtering apparatus provided for
The first film forming unit includes a first target, a curved magnetic field generating means for generating a curved magnetic field space in which magnetic lines of force are arcuate on the surface of the first target, and a cylinder provided so as to surround the first target. A pair of first composite cathodes each having a cylindrical auxiliary magnetic field generating means,
The pair of first composite cathodes are inclined such that the surfaces of the first targets are opposed to each other with a space therebetween, and the surfaces are inclined toward a first film forming position located on a side between the first targets. Arranged,
One bending magnetic field generation means of the pair of first composite cathodes is an inward bending magnetic field generation means whose polarity is set so that the magnetic field lines are directed from the outer periphery of the first target toward the center, and the other bending magnetic field generation means. Is an outward bending magnetic field generating means in which the polarity is set so that the magnetic field lines are directed from the central part of the first target to the outer peripheral part,
The cylindrical auxiliary magnetic field generating means has a magnetic field line extending from the periphery of one first target to the periphery of the other first target and surrounds the first inter-target space formed between the first targets and is more magnetic than the curved magnetic field space. Generate a cylindrical auxiliary magnetic field space with high strength,
The second film forming unit includes a second target and an inward or outward bending magnetic field generating means for generating the inward or outward bending magnetic field space on the surface side of the second target, and is directed toward the second film forming position. A sputtering apparatus, comprising: a sputtering cathode capable of scattering sputtered particles and having a deposition rate faster than that of the first deposition unit.   The sputtering apparatus according to claim 4, wherein a plurality of the first film forming units are arranged in the first region.   The sputtering apparatus according to claim 4, wherein a plurality of the second film forming units are arranged in parallel in the second region.   The said 2nd film-forming part is provided with the parallel plate magnetron cathode comprised by the said sputtering cathode arrange | positioned so that the surface of a 2nd target may face the 2nd film-forming position. The sputtering apparatus according to any one of the above.   The second film forming unit includes a pair of sputter cathodes arranged in parallel so that the surface of the second target faces the second film forming position, and an AC power supply capable of applying an AC electric field that is 180 ° out of phase is connected. A dual magnetron cathode comprising: a sputtering apparatus according to any one of claims 4 to 6. The second film forming unit includes a second target, a curved magnetic field generating means for generating a curved magnetic field space in which magnetic lines of force are arcuate on the surface of the second target, and a cylinder provided so as to surround the second target. A pair of second composite type cathodes each having a cylindrical auxiliary magnetic field generating means,
The pair of second composite cathodes are inclined such that the surfaces of the second target are opposed to each other at an interval, and the surfaces are inclined toward a second film forming position located on the side between the second targets. Arranged,
One bending magnetic field generation means of the pair of second composite cathodes is an inward bending magnetic field generation means whose polarity is set so that the magnetic field lines are directed from the outer peripheral portion of the second target toward the center portion, and the other bending magnetic field generation means. Is an outward bending magnetic field generating means in which the polarity is set so that the magnetic field lines are directed from the central part of the second target to the outer peripheral part,
The cylindrical auxiliary magnetic field generating means has a magnetic field line extending from one second target periphery to the other second target periphery and surrounds a second inter-target space formed between the second targets, and is more magnetic than the curved magnetic field space. Generate a cylindrical auxiliary magnetic field space with high strength,
A pair of second composite cathodes having a larger angle formed by the surfaces of the second target than the angle formed by the surfaces of the first target in the pair of first composite cathodes provided in the first film forming unit; The sputtering apparatus according to any one of claims 4 to 6, wherein:   10. The sputtering apparatus according to claim 4, wherein the pair of first composite cathodes is connected to an AC power source capable of applying an AC electric field that is 180 ° out of phase with each other. 11.

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