JP6329110B2 - Plasma processing equipment - Google Patents

Description

  The present invention relates to a plasma processing apparatus.

  In the manufacturing process of various products such as a semiconductor device, a liquid crystal display, and an optical disk, a thin film such as an optical film may be formed on a workpiece such as a wafer or a glass substrate. The thin film can be formed by repeating film formation for forming a film of metal or the like on the workpiece and film processing such as etching, oxidation or nitridation for the formed film.

  Film formation and film treatment can be performed by various methods, one of which is using plasma. In film formation, a target made of a material to be formed is placed in a vacuum vessel. An inert gas is introduced into the vacuum vessel, a direct current voltage is applied to the target to convert the inert gas into plasma, and ions are generated, and the ions collide with the target. Film formation is performed by depositing the material knocked out of the target on the workpiece.

  In the film treatment, an electrode for generating plasma is disposed in a vacuum vessel, and the formed work is disposed under the electrode. A process gas is introduced into the vacuum vessel, and a high frequency voltage is applied to the electrodes to turn the process gas into plasma to generate ions. In the case of etching, an inert gas such as argon gas is used as the process gas. Oxygen is used for the oxidation treatment, and nitrogen is used for the nitridation treatment. By causing the generated ions to collide with the film on the workpiece, film processing such as etching the film or generating oxide or nitride is performed.

  In order to perform such film formation and film processing continuously, a rotary table is arranged inside one vacuum vessel, and a plurality of film forming units and film processing units are arranged in the circumferential direction above the rotary table. There is a plasma processing apparatus arranged (see, for example, Patent Documents 1 and 2). An optical film or the like is formed by holding and transporting the work on the rotary table and passing the work directly under the film forming unit and the film processing unit.

  For example, in the membrane processing unit in which the electrodes as in Patent Documents 1 and 2 are formed in a cylindrical shape whose upper end is closed (hereinafter referred to as a “cylindrical electrode”), process gas is introduced into the cylindrical electrode. By introducing, plasma is generated inside the cylindrical electrode. The opening of the cylindrical electrode is arranged so as to face the surface of the turntable with a narrow clearance, and the workpiece passes through the opening with a narrow clearance. By doing so, film processing can be performed while reducing the outflow of plasma to the outside.

JP 2002-256428 A Japanese Patent Publication No.57-27183

  In order to improve the etching rate and the compound generation rate in the film processing unit, it is necessary to increase the voltage applied to the electrodes or increase the pressure of the process gas to be introduced. However, when the voltage or gas pressure increases, the plasma generated inside the cylindrical electrode spreads outside, and the self-bias voltage may be reversed, and film processing may not be established.

  In order to solve the above-described problems, an object of the present invention is to suppress the leakage of the discharge inside the cylindrical electrode to the outside, and to stabilize the processing in the plasma processing apparatus and improve the processing speed.

  In order to achieve the above object, a plasma processing apparatus of the present invention includes a cylindrical electrode having an opening at one end and a process gas introduced therein, and a power source for applying a voltage to the cylindrical electrode. And a conveyance unit that carries the workpiece in and out immediately below the opening, and a magnetic member that forms a magnetic field including magnetic lines parallel to the conveyance direction of the workpiece in the vicinity of the opening.

  By forming a magnetic field in the vicinity of the opening of the cylindrical electrode by the magnetic member, plasma electrons inside the cylindrical electrode are trapped in the magnetic field, and the cylindrical electrode is not affected even under high voltage and high gas pressure conditions. The internal discharge is less likely to leak to the outside. As a result, inversion of the self-bias voltage can be suppressed and film processing can be performed stably. In addition, since the magnetic field includes magnetic lines of force parallel to the workpiece conveyance direction, a magnetic field tunnel is formed inside the cylindrical electrode, and the plasma is guided to the tunnel and spreads evenly, so that ions spread throughout the workpiece. Therefore, the etching rate and compound generation rate of the plasma processing apparatus can be improved, and the reliability can be improved.

It is a top view which shows typically the structure of the plasma processing apparatus which concerns on the 1st Embodiment of this invention. It is AA sectional drawing of FIG. It is BB sectional drawing of FIG. (A) is the figure which simplified FIG. 3 and represented typically the plasma generate | occur | produced in a cylindrical electrode, and the magnetic field formed with a magnetic member. (B) is a simplified plan view of the membrane processing unit, schematically showing plasma generated in a cylindrical electrode and a magnetic field formed by a magnetic member. It is the simplified top view of the film processing unit which shows the modification of the 1st Embodiment of this invention. It is a schematic block diagram of the plasma processing apparatus which concerns on the 2nd Embodiment of this invention. (A) is the figure which simplified FIG. 6 and represented typically the plasma generate | occur | produced in a cylindrical electrode, and the magnetic field formed with a magnetic member. (B) is a simplified plan view of the membrane processing unit, schematically showing plasma generated in a cylindrical electrode and a magnetic field formed by a magnetic member. It is sectional drawing which shows the structure of the film processing unit which concerns on other embodiment of this invention.

[First Embodiment]
[Constitution]
Embodiments of the present invention will be specifically described with reference to the drawings.

  As shown in FIGS. 1 and 2, the plasma processing apparatus has a substantially cylindrical chamber 1. The chamber 1 is provided with an exhaust unit 2 so that the inside of the chamber 1 can be exhausted to a vacuum. A substantially circular turntable 3 is disposed inside the chamber 1. A driving mechanism (not shown) is connected to the central axis of the rotary table 3. The rotary table 3 rotates about the central axis as a rotation axis by driving the drive mechanism. A plurality of holding portions 3 a that hold the workpiece W are provided on the upper surface of the rotary table 3. The plurality of holding portions 3 a are provided at equal intervals along the circumferential direction of the rotary table 3. As the rotary table 3 rotates, the workpiece W held by the holding unit 3 a moves in the circumferential direction of the rotary table 3. In other words, a transport path (hereinafter referred to as “transport path P”) that is a circular movement locus of the workpiece is formed on the surface of the rotary table 3.

  Hereinafter, the term “circumferential direction” simply refers to the “circumferential direction of the rotary table 3”, and the term “radial direction” simply refers to the “radial direction of the rotary table 3”. In the present embodiment, a flat substrate is used as an example of the workpiece W, but the type of the workpiece W to be subjected to plasma processing is not limited to a specific one. For example, you may use the curved board | substrate which has a recessed part or a convex part in the center.

  Above the turntable 3, a unit (hereinafter referred to as “processing unit”) that performs processing of each process in the plasma processing apparatus is provided. The respective processing units are arranged adjacent to each other at a predetermined interval along the workpiece conveyance path P formed on the surface of the turntable 3. The process of each process is performed because the workpiece | work W hold | maintained at the holding | maintenance part 3a passes under each processing unit.

  In the example of FIG. 1, seven processing units 4 a to 4 g are arranged along the conveyance path P on the rotary table 3. In the present embodiment, the processing units 4a, 4b, 4c, 4d, 4f, and 4g are film forming units that perform a film forming process on the workpiece W. The processing unit 4e is a film processing unit that processes a film formed on the workpiece W by the film forming unit. In the present embodiment, the film forming unit will be described as performing sputtering. The film processing unit will be described as performing etching. Between the processing unit 4a and the processing unit 4g, there is provided a load lock unit 5 that carries an unprocessed work W from the outside into the chamber 1 and carries the processed work W out of the chamber 1. . In the present embodiment, the conveyance direction of the workpiece W is the direction from the position of the processing unit 4a toward the processing unit 4g in the clockwise direction in FIG. Of course, this is merely an example, and the transport direction, the types of processing units, the arrangement order, and the number are not limited to specific ones, and can be determined as appropriate.

  A configuration example of the processing unit 4a which is a film forming unit is shown in FIG. The other film forming units 4b, 4c, 4d, 4f, and 4g may be configured in the same manner as the film forming unit 4a, but other structures may be applied. As shown in FIG. 2, the film forming unit 4 a includes a target 6 attached to the upper surface inside the chamber 1 as a sputtering source. The target 6 is a plate-like member made of a material that is deposited on the workpiece W. The target 6 is installed at a position facing the workpiece W when the workpiece W passes under the film forming unit 4a. A DC power source 7 that applies a DC voltage to the target 6 is connected to the target 6. In addition, a sputter gas introduction unit 8 for introducing a sputter gas into the chamber 1 is installed on the upper surface inside the chamber 1 in the vicinity of the location where the target 6 is attached. As the sputtering gas, for example, an inert gas such as argon can be used. A partition wall 9 for reducing the outflow of plasma is provided around the target 6. As for the power source, a known power source such as a DC pulse power source or an RF power source can be applied.

  Examples of the configuration of the film processing unit 4e are shown in FIGS. FIG. 2 is a cross-sectional view taken along the line AA of FIG. 3 is a cross-sectional view taken along line BB in FIG. FIG. 4A is a schematic diagram in which part of FIG. 3 is simplified, and shows the operation of the film processing unit 4e. FIG. 4B is a simplified plan view of the film processing unit 4e, and shows the operation of the film processing unit 4e.

  The film processing unit 4 e includes a cylindrical electrode (hereinafter referred to as “cylindrical electrode”) 10 installed on the upper surface inside the chamber 1. The cylindrical electrode 10 has a rectangular tube shape, has an opening 11 at one end, and is closed at the other end. The cylindrical electrode 10 passes through a through-hole provided in the upper surface of the chamber 1 so that the end on the opening 11 side is located inside the chamber 1 and the closed end is located outside the chamber 1. Placed in. The cylindrical electrode 10 is supported on the periphery of the through hole of the chamber 1 through an insulating material 21. The opening 11 of the cylindrical electrode 10 is disposed at a position facing the conveyance path P formed on the turntable 3. That is, the rotary table 3 transports the workpiece W as a transport unit and passes it directly under the opening 11. The position immediately below the opening 11 is the passing position of the workpiece W.

  As shown in FIG. 4B, when viewed from above, the cylindrical electrode 10 has a fan shape whose diameter increases from the center side in the radial direction r of the turntable 3 toward the outside. Similarly, the opening 11 of the cylindrical electrode 10 has a fan shape. The speed at which the workpiece W held on the turntable 3 passes under the opening 11 is slower toward the center side in the radial direction r of the turntable 3, and is faster toward the outside. Therefore, if the opening 11 is a simple rectangle or square, there is a difference in the time for the workpiece W to pass immediately below the opening 11 between the center side and the outside in the radial direction. By expanding the diameter of the opening 11 from the center side in the radial direction r toward the outside, the time for the workpiece W to pass through the opening 11 can be made constant, and the plasma processing described later can be made uniform. However, a rectangle or a square may be used as long as the difference in passing time does not cause a problem in the product.

  As described above, the cylindrical electrode 10 passes through the through hole of the chamber 1 and a part thereof is exposed to the outside of the chamber 1. A portion of the cylindrical electrode 10 exposed to the outside of the chamber 1 is covered with an external shield 12 as shown in FIG. The space inside the chamber 1 is kept airtight by the outer shield 12. The periphery of the portion of the cylindrical electrode 10 located inside the chamber 1 is covered with an internal shield 13. The inner shield 13 has a rectangular tube shape coaxial with the tubular electrode 10 and is supported on the upper surface inside the chamber 1. Each side surface of the tube of the inner shield 13 is provided substantially parallel to each side surface of the cylindrical electrode 10. The lower end of the inner shield 13 is at the same position in the height direction as the opening 11 of the cylindrical electrode 10, but a flange 14 extending in parallel with the upper surface of the turntable 3 is provided at the lower end of the inner shield 13. . The flange 14 prevents the plasma generated inside the cylindrical electrode 10 from flowing out of the inner shield 13. The workpiece W conveyed by the rotary table 3 is carried through the gap between the rotary table 3 and the flange 14 and directly under the opening of the cylindrical electrode 10, and again passes through the gap between the rotary table 3 and the flange 14. Then, it is unloaded from directly below the opening of the cylindrical electrode 10.

  An RF power source 15 for applying a high frequency voltage is connected to the cylindrical electrode 10. A matching box (not shown) is connected in series to the output side of the RF power source 15. The RF power source is also connected to the chamber 1, with the cylindrical electrode 10 serving as a cathode and the chamber 1 serving as an anode. The chamber 1 and the turntable 3 are grounded. The inner shield 13 having the flange 14 is also grounded.

  Further, a process gas introduction unit 16 is connected to the cylindrical electrode 10, and a process gas is introduced into the cylindrical electrode 10 from an external process gas supply source via the process gas introduction unit 16. The process gas can be appropriately changed depending on the purpose of the film treatment. For example, when etching is performed, an inert gas such as argon can be used as an etching gas. Oxygen can be used for the oxidation treatment. Nitrogen can be used when nitriding is performed. Both the RF power source 15 and the process gas introduction part 16 are connected to the cylindrical electrode 10 through a through hole provided in the outer shield 12.

  Further, a magnetic member 17 is installed below the rotary table 3. The magnetic member 17 is placed on a support base 18 attached to the bottom surface of the chamber 1, and is disposed at a position facing the opening 11 of the cylindrical electrode 10 with the rotary table 3 interposed therebetween. As shown in FIG. 4, the magnetic member 17 can be composed of a pair of rod-shaped permanent magnets including a first magnet 17a and a second magnet 17b. The first magnet 17a and the second magnet 17b are arranged so as to be spaced apart from each other by a predetermined interval. “Arrangement is made so that portions having different polarities face each other” means that the south pole side of the second magnet 17b faces the north pole side of the first magnet 17a and the south pole of the first magnet 17a. This means that the N pole side of the second magnet 17b faces the side. The first magnet 17 a and the second magnet 17 b are arranged so as to be orthogonal to the rotation direction of the turntable 3.

  By arranging the first magnet 17a and the second magnet 17b so as to oppose portions of different polarities with a predetermined interval, a magnetic field B is provided between the first magnet 17a and the second magnet 17b. Will occur. As shown in FIG. 4A, the magnetic field B includes lines of magnetic force formed in an arc shape passing through the rotary table 3 up and down and from the first magnet 17a toward the second magnet 17b. Further, the magnetic field B includes magnetic force lines that are parallel or substantially parallel to the rotary table 3 in the vicinity of the opening 11 of the cylindrical electrode 10. As shown in FIG. 4B, the first magnet 17 a and the second magnet 17 b are arranged so as to be orthogonal to the rotation direction of the turntable 3, so that the magnetic field B is formed on the turntable 3. It becomes parallel to the conveying direction of the workpiece W. The distance between the first magnet 17a and the second magnet 17b is such that the magnetic field formed between the two magnets can obtain a sufficient magnetic force to capture plasma electrons, which will be described later. Can be determined as appropriate. In FIG. 4B, the first magnet 17a and the second magnet 17b are opposed to each other with an interval corresponding to the circumferential width of the opening 11, but as shown in the modification of FIG. You may make it oppose, providing a space | interval narrower than the circumferential width of 11. Even if magnets that are inexpensive and have a weak magnetic force are used, it becomes easier to capture the electrons of the plasma by reducing the distance between them.

  In addition, it is preferable to set the magnetic force of the 1st magnet 17a and the 2nd magnet 17b, arrangement | positioning space | interval, and the separation distance with the turntable 3 on the conditions that the magnetic flux density on the workpiece | work W becomes 200 gauss or more.

  The plasma processing apparatus further includes a control unit 20. The control unit 20 includes an arithmetic processing device such as a PLC or a CPU. The control unit 20 performs control related to introduction and exhaust of the sputtering gas and process gas into the chamber 1, control of the DC power supply 7 and RF power supply 15, and control of the rotation speed of the turntable 3.

[Action]
The operation of the plasma processing apparatus of this embodiment will be described. An unprocessed work W is carried into the chamber 1 from the load lock chamber. The loaded work W is held by the holding unit 3 a of the rotary table 3. The inside of the chamber 1 is evacuated by the exhaust unit 2 to be in a desired vacuum state. By driving the rotary table 3, the workpiece W is transported along the transport path P and passes under the processing units 4 a to 4 g.

  In the film forming unit 4a, a sputtering gas is introduced from the sputtering gas introduction unit 8, and a DC voltage is applied from the DC power source 7 to the sputtering source. By applying a DC voltage, the sputtering gas is turned into plasma and ions are generated. When the generated ions collide with the target 6, the material of the target 6 jumps out. The protruding material is deposited on the work W passing under the film forming unit 4a, whereby a thin film is formed on the work W. Other film forming units 4b, 4c, 4d, 4f, and 4g perform film formation in the same manner. However, it is not always necessary to form a film in all film forming units.

  The workpiece W on which the film formation has been performed in the film formation units 4a to 4d is continuously transported on the transport path P by the rotary table 3, and in the film processing unit 4e, a position immediately below the opening 11 of the cylindrical electrode 10, that is, Pass through the membrane processing position. As described above, in the present embodiment, an example in which etching is performed in the film processing unit 4e will be described. In the film processing unit 4 e, an etching gas is introduced into the cylindrical electrode 10 from the process gas introduction unit 16, and a high frequency voltage is applied to the cylindrical electrode 10 from the RF power source 15. By applying a high frequency voltage, the etching gas is turned into plasma and ions are generated. The generated ions collide with the thin film on the workpiece W passing under the opening 11 of the cylindrical electrode 10, whereby the thin film is etched. The plasma inside the cylindrical electrode 10 spreads in the radial direction r of the turntable 3.

  As shown in FIG. 3, a first magnet 17 a and a second magnet 17 b are arranged immediately below the opening 11 so as to be orthogonal to the rotation direction. A magnetic field B is generated between the first magnet 17a and the second magnet 17b. The magnetic field B is generated from the first magnet 17a, passes through the rotary table 3 and the work W, reaches the vicinity of the opening 11 above the work W, passes through the work W and the rotary table 3 again, and then passes through the second. Magnetic field lines reaching the magnet 17b. In other words, the magnetic field B includes magnetic field lines formed so as to straddle the workpiece. In this way, in the vicinity of the opening 11, in other words, a magnetic field is formed between the opening 11 and the workpiece, the plasma inside the cylindrical electrode 10 is captured by the magnetic field B and is near the workpiece W. Plasma density increases. Ions easily collide with the film of the workpiece W held on the rotary table 3. Further, the magnetic field B includes lines of magnetic force parallel to the conveyance direction of the workpiece W. Since the lines of magnetic force extend inside the cylindrical electrode 10 in the radial direction r, a radial magnetic field tunnel is formed. When the plasma is trapped in the magnetic field tunnel, the plasma tends to spread in the radial direction r, and the ions collide uniformly with the workpiece W passing just below the opening 11.

  The workpiece W that has been subjected to the film processing in the film processing unit 4e is then subjected to film formation in the film formation units 4f and 4g to form a thin film. Such a process is repeatedly performed by the rotation of the turntable 3, and the workpiece W on which a desired thin film is formed is carried out of the chamber 1 from the load lock unit 5.

[effect]
As described above, the plasma processing apparatus of the present embodiment includes the cylindrical electrode 10 that is provided with the opening 11 at one end and into which the process gas is introduced. An RF power source 15 for applying a voltage is connected to the cylindrical electrode 10. The plasma processing apparatus includes a turntable 3 as a transfer unit, and the turntable 3 transfers the workpiece W and passes it directly below the opening 11 of the cylindrical electrode 10. The plasma processing apparatus further includes a magnetic member 17 that forms a magnetic field B including a magnetic force line substantially parallel to the workpiece W in the vicinity of the opening 11.

  Since the magnetic field B formed in the vicinity of the opening 11 captures the electrons of the plasma generated inside the cylindrical electrode 10, the plasma confinement effect is generated and the plasma leaking out of the cylindrical electrode 10 is reduced. Can do. As a result, inversion of the self-bias voltage can be suppressed and film processing can be performed stably. In addition, since the plasma density increases in the vicinity of the workpiece W held on the turntable 3, the plasma easily collides with the film on the workpiece W, and the etching rate can be improved. Furthermore, the magnetic field B includes magnetic force lines parallel to the conveyance direction of the workpiece W. As a result, a magnetic field tunnel is formed in the radial direction r inside the cylindrical electrode 10. When plasma is trapped in this tunnel, it is guided to this tunnel and spreads in the radial direction r, so that ions can collide with the workpiece W evenly. As a result, the etching rate and compound generation rate of the plasma processing apparatus can be improved, and the etching accuracy can be increased. Similar effects can be obtained not only by etching but also by oxidation or nitridation.

  The magnetic member 17 is a first magnet 17a and a second magnet 17b, which are a pair of magnets arranged so that portions having different polarities face each other. The first magnet 17a and the second magnet 17b are installed directly below the opening 11 and below the passing position of the workpiece W. The magnetic field B is formed so as to straddle the workpiece W passing through the film processing position. By forming the magnetic field B in this way, the plasma is concentrated in the vicinity of the center in the circumferential direction of the opening 11, and the diffusion of the plasma can be suppressed. Further, since the magnetic field B includes magnetic lines of force that are substantially parallel to the workpiece W, and these magnetic lines of force are formed at a position close to the workpiece, a high plasma density can be obtained in the vicinity of the workpiece W.

  Specifically, the magnetic member 17 is installed below the turntable 3. For example, when the magnetic member 17 is incorporated into an existing plasma processing apparatus, it is not necessary to change the configuration of the film processing unit 4e, and attachment is easy.

[Second Embodiment]
Next, a second embodiment will be described with reference to FIGS. In addition, about the component same as the component of 1st Embodiment, the same code | symbol is provided and detailed description is abbreviate | omitted.

  In the second embodiment, as shown in FIG. 6, the magnetic member 17 is installed in the vicinity of the side surface of the cylindrical electrode 10. Specifically, the magnetic member 17 is attached to the side surface of the inner shield 13 that covers the cylindrical electrode 10. More specifically, the first magnet 17a and the second magnet 17b are in contact with the opposite side surfaces in the transport direction of the inner shield 13, and are supported by the upper surface inside the chamber 1 and the flange 14 of the inner shield 13. Install as follows.

  As a result, the first magnet 17 a and the second magnet 17 b are opposed to each other in the vicinity of the opening 11 of the cylindrical electrode 10 with an interval corresponding to the width of the opening 11. The first magnet 17 a and the second magnet 17 b are arranged so as to be orthogonal to the rotation direction of the turntable 3. Similar to the first embodiment, the first magnet 17a and the second magnet 17b are arranged so that portions having different polarities face each other.

  As shown in FIG. 7, a magnetic field B is generated between the first magnet 17a and the second magnet 17b attached to the side surface of the inner shield 13. The magnetic field B includes lines of magnetic force that are substantially parallel to the rotary table 3 in the vicinity of the opening 11 of the cylindrical electrode 10. Since the first magnet 17a and the second magnet 17b are arranged so as to be orthogonal to the rotation direction of the turntable 3, the magnetic field B is parallel to the conveyance direction of the workpiece W formed on the turntable 3. .

  As in the first embodiment, this magnetic field line captures electrons in the plasma generated inside the cylindrical electrode 10, so that a confinement effect is generated and plasma leaking out of the cylindrical electrode 10 is reduced. Can do. As a result, inversion of the self-bias voltage can be suppressed and film processing can be performed stably. Further, since the plasma density near the turntable 3 is increased, the etching rate can be improved.

[Other Embodiments]
The present invention is not limited to the above embodiment. For example, in the above-described embodiment, etching is performed in the film processing, but oxidation processing or nitriding processing may be performed. In the case of oxidation treatment, oxygen gas may be introduced into the film processing unit 4e, and in the case of nitridation treatment, nitrogen gas may be introduced into the film processing unit 4e.

  In the above-described embodiment, the turntable 3 is used as the transfer unit of the plasma processing apparatus, but the present invention is not limited to this. Any workpiece can be used as long as the workpiece W can be conveyed and sequentially conveyed to the processing unit. For example, the conveyance unit may be constituted by a rotating drum, and each processing unit may be arranged in the circumferential direction of the drum.

  In the above-described embodiment, in the film processing unit 4e, the cylindrical electrode 10 is installed so as to penetrate the upper surface of the chamber 1, and the periphery of the cylindrical electrode 10 is covered with the outer shield 12 and the inner shield 13. Not limited. For example, as shown in FIG. 8, the cylindrical electrode 10 is placed on the upper surface of the chamber 1 via an insulating material 21, and the opening 11 of the cylindrical electrode 10 is connected to the through hole of the chamber 1. good. In this structure, since the cylindrical electrode 10 seals the inside of the chamber 1, the external shield 12 can be omitted. Further, since the upper surface inside the chamber 1 plays the same role as the flange 14 of the inner shield 13, the inner shield 13 can be omitted. Electrons collide with the process gas leaking to the outside from the opening 11 of the cylindrical electrode 10 and are ionized. However, since the electrons can flow to the ground in the vicinity of the opening 11, the ionization effect is reduced as a result. Can be suppressed. However, if the gap between the opening 11 and the workpiece W is wide, ionization occurs at a distance from the wall surface of the chamber 1 and the plasma diffuses. Therefore, the distance between the rotary table 3 and the upper surface of the chamber 1 is shortened. Thus, it is preferable to suppress the spread of plasma to the outside of the cylindrical electrode 10.

  Further, the shape of the chamber 1 that accommodates the transfer unit and each processing unit, the type and arrangement of the processing units are not limited to specific ones, and can be appropriately changed according to the type of the work W and the installation environment.

  In the above-described embodiment, a pair of bar magnets is used as the magnetic member 17, but the present invention is not limited to this. Any other shape can be used as long as the magnetic field B including the magnetic force lines parallel to the rotary table 3 can be formed. Moreover, you may use the electromagnet etc. which wound the coil around the iron core instead of the permanent magnet.

DESCRIPTION OF SYMBOLS 1 Chamber 2 Exhaust part 3 Turntable 3a Holding part 4a, 4b, 4c, 4d, 4f, 4g Processing unit (deposition unit)
4e Processing unit (membrane processing unit)
5 Load lock part 6 Target 7 DC power supply 8 Sputtering gas introduction part 9 Bulkhead 10 Cylindrical electrode 11 Opening part 12 External shield 13 Internal shield 14 Flange 15 RF power supply 16 Process gas introduction part 17 Magnetic member 17a First magnet 17b Second Magnet 18 Support base 20 Control part 21 Insulating material B Magnetic field P Transport path W Work r Radial direction

Claims (4)

A cylindrical electrode provided with an opening at one end and a process gas introduced therein;
A power source for applying a voltage to the cylindrical electrode;
A transport unit that transports a workpiece and passes directly under the opening;
A plasma processing apparatus comprising: a magnetic member that forms a magnetic field including a magnetic field line parallel to a transfer direction of the workpiece in the vicinity of the opening.   The magnetic member is a pair of magnets that are provided directly below the opening and below the passing position of the workpiece, and have different polarities facing each other, and pass through the passing position between the pair of magnets. The plasma processing apparatus according to claim 1, wherein a magnetic field including a magnetic field line straddling the workpiece is formed. The transport unit is a rotary table that is driven to rotate while holding the workpiece on the upper surface,
The plasma processing apparatus according to claim 1, wherein the magnetic member is provided below the turntable and generates magnetic lines of force parallel to a rotation direction of the turntable. The plasma processing apparatus according to claim 1, wherein the magnetic member is a pair of magnets disposed in the vicinity of a side surface of the cylindrical electrode, and portions having different polarities face each other.

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