JP2008182079A - Photoelectric conversion device - Google Patents

Abstract

A photoelectric conversion device including an organic photoelectric conversion element and capable of easily achieving high resolution is provided.
A plurality of organic photoelectric conversion elements 8 are arranged on one main surface of a substrate 2 having a pair of main surfaces facing each other, and each organic photoelectric conversion element is a first one arranged on the substrate 2. The organic photoelectric conversion part 6a which consists of one area | region of the electrode 5, the organic photoelectric conversion layer 6 arrange | positioned so that each 1st electrode may be covered, and the 2nd electrode 7a arrange | positioned on this organic photoelectric conversion part 6a In configuring the photoelectric conversion device 20, the light shielding layer 9 that restricts the incidence of light on the organic photoelectric conversion layer 6 is provided so as to surround the plurality of organic photoelectric conversion elements 8 in plan view.
[Selection] Figure 1

Description

  The present invention relates to a photoelectric conversion device that converts various kinds of information such as characters and figures into electrical signals.

  Photoelectric conversion devices used to obtain image data by converting images of various objects such as characters and figures into electrical signals are used in a wide range of products such as facsimiles and image scanners. As the method, CMOS (Complementary) is used. A metal oxide semiconductor (CCD) system, a CCD (Charge Coupled Device) system, and the like are known.

  A conventional photoelectric conversion device converts an image into an electrical signal by a large number of inorganic photoelectric conversion elements (photodiodes) formed on a semiconductor substrate, and a large-scale semiconductor process is required for its production. For this reason, it has the subject that it is difficult to reduce the cost, coupled with the fact that the man-hours are very large and it is difficult to increase the area of the semiconductor substrate. Therefore, as described in (Non-Patent Document 1), attempts have been made to reduce costs by forming a photoelectric conversion layer with an organic photoelectric conversion material.

  The organic photoelectric conversion material can be easily made into a solution, and can be thinned by a very simple method such as a spin coating method, a blade method, or a dipping method. That is, the organic photoelectric conversion layer can be easily formed. And, since the organic photoelectric conversion element having a structure in which the organic photoelectric conversion layer is disposed between the pair of electrodes can express the same function as the inorganic photoelectric conversion element despite its easy production, Has attracted a lot of attention. For example, (Patent Document 1) describes a light-sensitive element using an organic photoelectric change material whose photoelectric conversion wavelength region is a red light region, a green light region, or a blue light region.

Also, in recent years, red light, green light, and blue light, such as those provided with a primary color filter section so that full-color image data can be obtained, and the document reading apparatus described in (Patent Document 2) are used. Those equipped with each light source (light emitting diode) have been developed.
G. Yu, Y. Cao, J .; Wang, J. et al. McElvain and A.M. J. et al. Heeger, Synth. Met. 102, 904 (1999) Special Table 2002-502120 JP-A-3-274856

  It is difficult to form a large number of organic photoelectric conversion layers under a fine pitch by a method such as a spin coating method, a blade method, or a dipping method. For this reason, in order to obtain a high-resolution photoelectric conversion device including an organic photoelectric conversion layer, one organic photoelectric conversion element is not formed for each organic photoelectric conversion element, but one organic photoelectric conversion element is provided. It is more practical to form a large organic photoelectric conversion layer so that a predetermined region in the organic photoelectric conversion layer is used as its own organic photoelectric conversion unit. In this case, the shape and size in plan view of one of the pair of electrodes constituting the organic photoelectric conversion device (usually the electrode on the substrate side) are almost the same, and the shape and size in plan view of the organic photoelectric conversion device It becomes.

  However, when a photoelectric conversion device is manufactured using the large organic photoelectric conversion layer as described above, photoelectric conversion is performed in a region other than the region that should function as an organic photoelectric conversion element, and undesired carriers are converted into organic photoelectric devices. Crosstalk occurs due to movement to the conversion element. As a result, the resolution decreases.

  This invention is made | formed in view of said situation, It is a photoelectric conversion device provided with the organic photoelectric conversion element, Comprising: It aims at providing the photoelectric conversion device which is easy to aim at high resolution.

  The photoelectric conversion device of the present invention that achieves the above object includes a substrate having a pair of main surfaces facing each other, and a plurality of organic photoelectric conversion elements arranged on one main surface of the substrate, Each of the organic photoelectric conversion elements includes a first electrode disposed on a substrate, an organic photoelectric conversion unit including a region of the organic photoelectric conversion layer disposed so as to cover each first electrode, and the organic photoelectric conversion A photoelectric conversion device having a second electrode disposed on the portion, and disposed so as to surround all of the plurality of organic photoelectric conversion elements in a plan view, and restricting light incident on the organic photoelectric conversion layer It has a light shielding layer.

  Another photoelectric conversion device of the present invention to achieve the above object comprises a substrate having a pair of main surfaces facing each other, and a plurality of organic photoelectric conversion elements arranged on one main surface of the substrate, Each of the plurality of organic photoelectric conversion elements includes a first electrode disposed on the substrate, an organic photoelectric conversion unit including a region of the organic photoelectric conversion layer disposed so as to cover each first electrode, and the organic A photoelectric conversion device having a second electrode disposed on a photoelectric conversion unit, and having an electrically insulating layer disposed so as to surround all of the first electrode.

  Still another photoelectric conversion device of the present invention that achieves the above object includes a substrate having a pair of main surfaces facing each other, and a plurality of organic photoelectric conversion elements arranged on one main surface of the substrate. Each of the plurality of organic photoelectric conversion elements includes a first electrode disposed on the substrate, an organic photoelectric conversion unit including a region of the organic photoelectric conversion layer disposed so as to cover each first electrode, A photoelectric conversion device having a second electrode disposed on an organic photoelectric conversion unit, and disposed so as to surround all of the plurality of organic photoelectric conversion elements in a plan view, so that light is incident on the organic photoelectric conversion layer. A light-shielding layer that restricts the above and an electrical insulating layer disposed so as to surround all of the first electrode.

  Still another photoelectric conversion device of the present invention that achieves the above object includes a substrate having a pair of main surfaces facing each other, a plurality of organic photoelectric conversion elements arranged on one main surface of the substrate, and a plurality of Each of the organic photoelectric conversion elements includes a signal readout wiring disposed one by one, and each of the plurality of organic photoelectric conversion elements covers a first electrode disposed on the substrate and each first electrode. The organic photoelectric conversion part which consists of one area | region of the organic photoelectric conversion layer arrange | positioned in this way, and the 2nd electrode arrange | positioned on this organic photoelectric conversion part, and said wiring is a corresponding organic photoelectric conversion element The photoelectric conversion device connected to the first electrode has a light shielding layer disposed on the wiring and covering the wiring.

  Still another photoelectric conversion device of the present invention that achieves the above object includes a substrate having a pair of main surfaces facing each other, a plurality of organic photoelectric conversion elements arranged on one main surface of the substrate, and a plurality of Each of the organic photoelectric conversion elements includes a signal readout wiring disposed one by one, and each of the plurality of organic photoelectric conversion elements covers a first electrode disposed on the substrate and each first electrode. The organic photoelectric conversion part which consists of one area | region of the organic photoelectric conversion layer arrange | positioned in this way, and the 2nd electrode arrange | positioned on this organic photoelectric conversion part, and said wiring is a corresponding organic photoelectric conversion element The photoelectric conversion device connected to the first electrode has an electrical insulating layer disposed on the wiring and covering the wiring.

  Each of the photoelectric conversion devices of the present invention is not provided with one organic photoelectric conversion layer for each organic photoelectric conversion element, but is separate from each other in the organic photoelectric conversion layer disposed so as to cover each first electrode. Since one region is used as an organic photoelectric conversion unit in each organic photoelectric conversion element, each organic photoelectric change element can be easily miniaturized and its shape accuracy and position accuracy are relatively easy. Can be high.

  In the photoelectric conversion device of the present invention, in which the light shielding layer is arranged so as to surround all of the plurality of organic photoelectric conversion elements in a plan view, the photoelectric conversion is performed at a place other than the area designed as the organic photoelectric conversion element. Conversion is suppressed. In the photoelectric conversion device of the present invention, in which the electrical insulating layer is disposed so as to surround all of the first electrodes, carriers generated by photoelectric conversion at a place other than the region designed as the organic photoelectric conversion element Is prevented from moving to the first electrode.

  On the other hand, in the photoelectric conversion device of the present invention in which the light shielding layer is disposed on the signal readout wiring, the photoelectric conversion is suppressed from occurring in the organic photoelectric conversion layer located on the wiring. It is done. In the photoelectric conversion device of the present invention, in which the light shielding layer is arranged on the signal readout wiring, in the organic photoelectric conversion layer, the carrier generated by photoelectric conversion at the position located on the wiring described above. Can be prevented from moving to the wiring.

  Therefore, in any photoelectric conversion device of the present invention, it is easy to miniaturize each organic photoelectric change element and suppress crosstalk, and as a result, it is easy to achieve high resolution.

  A photoelectric conversion device according to a first aspect of the present invention includes a substrate having a pair of main surfaces facing each other, and a plurality of organic photoelectric conversion elements arranged on one main surface of the substrate, and the plurality of organic photoelectric conversion elements Each of which is disposed on the organic photoelectric conversion unit, the organic photoelectric conversion unit including a first electrode disposed on the substrate, a region of the organic photoelectric conversion layer disposed so as to cover each first electrode, A photoelectric conversion device having a second electrode and a light-shielding layer that is disposed so as to surround all of the plurality of organic photoelectric conversion elements in a plan view and restricts the incidence of light on the organic photoelectric conversion layer It is characterized by that.

  In this photoelectric conversion device, the incidence of light to a portion other than the region designed as the organic photoelectric conversion element is suppressed by the light shielding layer, so that photoelectric conversion at the above portion is suppressed, and as a result, crosstalk is suppressed.

  A photoelectric conversion device according to a second invention is included in the photoelectric conversion device according to the first invention, and the light shielding layer surrounds each of the plurality of organic photoelectric conversion elements in a plan view. In this photoelectric conversion device, the incidence of light on the above-described portion is further suppressed by the light shielding layer, so that the photoelectric conversion at the portion is further suppressed, and as a result, the crosstalk is further suppressed.

  A photoelectric conversion device of a third invention is included in the photoelectric conversion device of the first or second invention, and the light shielding layer is electrically separated from each of the first electrode and the second electrode. It is characterized by being. In this photoelectric conversion device, since the light shielding layer can be formed of a metal material, it is easy to form the light shielding layer having a high optical density.

  A photoelectric conversion device according to a fourth invention is included in the photoelectric conversion device according to any one of the first to third inventions, and the light shielding layer partially overlaps each of the first electrodes. To do. In this photoelectric conversion device, light incident on the substrate as well as light incident perpendicularly to the substrate can be suppressed, so that the photoelectric conversion at the location can be further suppressed, resulting in crosstalk. Is further suppressed.

  A photoelectric conversion device of a fifth invention is included in the photoelectric conversion device of any one of the first to fourth inventions, and the light shielding layer is disposed on one of a pair of main surfaces of the substrate. It is characterized by being. In this photoelectric conversion device, since the light shielding layer can be formed on a plane, it is easy to improve the shape accuracy and position accuracy.

  A photoelectric conversion device according to a sixth aspect of the present invention includes a substrate having a pair of main surfaces facing each other, and a plurality of organic photoelectric conversion elements arranged on one main surface of the substrate, and the plurality of organic photoelectric conversion elements Each of which is disposed on the organic photoelectric conversion unit, the organic photoelectric conversion unit including a first electrode disposed on the substrate, a region of the organic photoelectric conversion layer disposed so as to cover each first electrode, A photoelectric conversion device having a second electrode, and having an electrically insulating layer disposed so as to surround all of the first electrode.

  In this photoelectric conversion device, the above-mentioned electrical insulation layer prevents carriers generated by photoelectric conversion in areas other than the region designed as the organic photoelectric conversion element from being suppressed by the electrical insulating layer, thereby suppressing crosstalk. It is done.

  A photoelectric conversion device according to a seventh aspect is included in the photoelectric conversion device according to the sixth aspect, wherein the electrical insulating layer surrounds each of the first electrodes. In this photoelectric conversion device, carriers generated by photoelectric conversion at the above locations are further suppressed from moving to the first electrode, so that crosstalk is further suppressed.

  A photoelectric conversion device according to an eighth aspect of the present invention includes a substrate having a pair of main surfaces facing each other, and a plurality of organic photoelectric conversion elements arranged on one main surface of the substrate, and the plurality of organic photoelectric conversion elements Each of which is disposed on the organic photoelectric conversion unit, the organic photoelectric conversion unit including a first electrode disposed on the substrate, a region of the organic photoelectric conversion layer disposed so as to cover each first electrode, A light-shielding layer that is arranged so as to surround all of the plurality of organic photoelectric conversion elements in a plan view and restricts the incidence of light to the organic photoelectric conversion layer, And an electrically insulating layer disposed so as to surround all of the first electrodes.

  In this photoelectric conversion device, since the light incident on a portion other than the region designed as the organic photoelectric conversion element is suppressed by the light shielding layer, the photoelectric conversion at the above portion can be suppressed. In addition, the electric insulating layer suppresses carriers generated by photoelectric conversion at the above-described locations from moving to the first electrode. As a result, crosstalk is suppressed in the photoelectric conversion device.

  A photoelectric conversion device according to a ninth aspect is included in the photoelectric conversion device according to the eighth aspect, and is characterized in that the light shielding layer is laminated on an electrical insulating layer. In this photoelectric conversion device, it is easy to suppress the crosstalk due to the electric insulating layer preventing the carrier generated by the photoelectric conversion at the above-mentioned location from moving to the first electrode.

  The photoelectric conversion device of the tenth invention is included in the photoelectric conversion device of the eighth invention or the ninth invention, and the light shielding layer surrounds each of the plurality of organic photoelectric conversion elements in plan view, The electrical insulating layer surrounds each of the first electrodes. In this photoelectric conversion device, the incidence of light on the location is further suppressed by the light-shielding layer, and carriers generated by photoelectric conversion at the location are suppressed from moving to the first electrode by the electrical insulating layer. Therefore, crosstalk is further suppressed.

  A photoelectric conversion device according to an eleventh aspect of the invention is included in the photoelectric conversion device according to any of the eighth to tenth aspects of the invention, and the light shielding layer is electrically separated from each of the first electrode and the second electrode. It is characterized by. In this photoelectric conversion device, since the light shielding layer can be formed of a metal material, it is easy to form a light shielding layer having a high optical density.

  A photoelectric conversion device according to a twelfth aspect of the invention is included in the photoelectric conversion device according to any of the eighth to eleventh aspects of the invention, wherein the light shielding layer partially overlaps each of the first electrodes. To do. In this photoelectric conversion device, not only light incident perpendicularly to the substrate but also obliquely incident light can be prevented from being incident on the above location, so that photoelectric conversion at the location can be further suppressed, resulting in further crosstalk. It can be suppressed.

  A photoelectric conversion device according to a thirteenth aspect of the present invention is a substrate having a pair of main surfaces facing each other, a plurality of organic photoelectric conversion elements disposed on one main surface of the substrate, and each of the plurality of organic photoelectric conversion elements And each of the plurality of organic photoelectric conversion elements includes a first electrode disposed on the substrate and an organic layer disposed so as to cover each first electrode. It has an organic photoelectric conversion part which consists of one field of a photoelectric conversion layer, and the 2nd electrode arranged on this organic photoelectric conversion part, and the above-mentioned wiring is connected to the 1st electrode of the corresponding organic photoelectric conversion element. A photoelectric conversion device having a light shielding layer disposed on the wiring and covering the wiring.

  In this photoelectric conversion device, since the light incident on the region of the organic photoelectric conversion layer located on the wiring is suppressed by the light shielding layer, photoelectric conversion on the wiring is suppressed, and as a result, crosstalk occurs. It can be suppressed.

  A photoelectric conversion device according to a fourteenth aspect is included in the photoelectric conversion device according to the thirteenth aspect, wherein the light shielding layer covers an upper surface and a side surface of the wiring. In this photoelectric conversion device, the light incident on the area of the organic photoelectric conversion layer located around the wiring is suppressed by the light shielding layer, so that photoelectric conversion in the area is suppressed, and as a result, crosstalk is suppressed. .

  A photoelectric conversion device according to a fifteenth aspect of the present invention is a substrate having a pair of main surfaces facing each other, a plurality of organic photoelectric conversion elements disposed on one main surface of the substrate, and each of the plurality of organic photoelectric conversion elements And each of the plurality of organic photoelectric conversion elements includes a first electrode disposed on the substrate and an organic layer disposed so as to cover each first electrode. It has an organic photoelectric conversion part which consists of one field of a photoelectric conversion layer, and the 2nd electrode arranged on this organic photoelectric conversion part, and the above-mentioned wiring is connected to the 1st electrode of the corresponding organic photoelectric conversion element. A photoelectric conversion device having an electrical insulating layer disposed on the wiring and covering the wiring.

  In this photoelectric conversion device, carriers generated by photoelectric conversion in a region located on the wiring in the organic photoelectric conversion layer are prevented from moving to the wiring by the electrical insulating layer, so that crosstalk is prevented. It can be suppressed.

  A photoelectric conversion device according to a sixteenth aspect of the invention is included in the photoelectric conversion device of the fifteenth aspect of the invention, and the electrical insulating layer covers the upper surface and side surfaces of the wiring. In this photoelectric conversion device, since the electric insulating layer suppresses carriers generated by photoelectric conversion in the region located around the wiring in the organic photoelectric conversion layer, the crosstalk is prevented. Is further suppressed.

  A photoelectric conversion device according to a seventeenth invention is included in the photoelectric conversion device according to any one of the first to fifth or eighth to fourteenth inventions, and the light shielding layer includes an organic polymer material. To do. In this photoelectric conversion device, a desired resin composition can be applied to form a coating film, and then the coating film can be patterned to form a light shielding layer having a predetermined shape.

  A photoelectric conversion device according to an eighteenth aspect of the invention is included in the photoelectric conversion device of the seventeenth aspect of the invention, and the organic polymer material is a photosensitive resin. In this photoelectric conversion device, a light-shielding layer having a predetermined shape can be formed by applying a desired photosensitive resin composition to form a coating film and then subjecting the coating film to selective exposure processing and development processing. Therefore, it is easier to manufacture as compared with the case where the light shielding layer is formed of another organic polymer material.

  A photoelectric conversion device according to a nineteenth invention is included in the photoelectric conversion device according to the seventeenth or eighteenth invention, and the organic polymer material includes a polyimide resin. In this photoelectric conversion device, it is easy to form a light-shielding layer having high heat resistance.

  A photoelectric conversion device according to a twentieth invention is included in the photoelectric conversion device according to any one of the first to fifth or eighth to fourteenth inventions, and the light shielding layer includes a metal. In this photoelectric conversion device, it is easy to form a light shielding layer having a high optical density.

  The photoelectric conversion device of the twenty-first invention is included in the photoelectric conversion device of the twentieth invention, and the metal is at least one selected from chromium, aluminum, copper, nickel, tantalum, and tungsten. It is characterized by.

  A photoelectric conversion device according to a twenty-second invention is included in the photoelectric conversion device according to any one of the first to fifth or eighth to fourteenth inventions, and the light shielding layer includes carbon. In this photoelectric conversion device, it is easy to form a light shielding layer with a low environmental load.

  The photoelectric conversion device of the 23rd invention is included in the photoelectric conversion device of any one of the 1st to 5th, 8th to 14th, and 17th to 22nd inventions, and the optical density of the light shielding layer is 2 0.0 or more. In this photoelectric conversion device, since the light shielding property of the light shielding film is high, it is easy to suppress crosstalk.

  A photoelectric conversion device of a twenty-fourth invention is included in the photoelectric conversion device of any of the sixth to twelfth, fifteenth, and sixteenth inventions, and the electrical insulating layer includes an organic polymer material. It is characterized by. In this photoelectric conversion device, a desired resin composition is applied to form a coating film, and then the coating film is patterned to form an electrical insulating layer having a predetermined shape. Therefore, the photoelectric conversion device is easy to manufacture.

  A photoelectric conversion device according to a twenty-fifth aspect of the invention is included in the photoelectric conversion device of the twenty-fourth aspect, wherein the organic polymer material is a photosensitive resin. In this photoelectric conversion device, a desired photosensitive resin composition is applied to form a coating film, and then an electrical insulating layer having a predetermined shape is formed by subjecting the coating film to selective exposure processing and development processing. Therefore, it is easier to manufacture as compared with the case where the electrical insulating layer is formed of another organic polymer material.

  A photoelectric conversion device according to a twenty-sixth aspect of the invention is included in the photoelectric conversion device of the twenty-fourth or twenty-fifth aspect of the invention, and the organic polymer material includes a polyimide resin. In this photoelectric conversion device, it is easy to form an electrically insulating layer having high heat resistance.

  A photoelectric conversion device according to a twenty-seventh aspect of the invention is included in the photoelectric conversion device according to any of the sixth to tenth, fifteenth and sixteenth aspects, wherein the electrical insulating layer includes an inorganic substance. To do. In this photoelectric conversion device, it is easy to form a highly durable electrical insulating layer.

  A photoelectric conversion device according to a twenty-eighth aspect of the invention is included in the photoelectric conversion device of the twenty-seventh aspect, wherein the inorganic substance contains a silicon atom.

  A photoelectric conversion device according to a twenty-ninth invention is included in the photoelectric conversion device according to the twenty-seventh or twenty-eighth invention, wherein the inorganic substance includes silicon nitride.

A photoelectric conversion device according to a thirtieth aspect of the invention is included in the photoelectric conversion device according to any of the sixth to twelfth, fifteenth, sixteenth, and twenty-fourth to 29th aspects. It has a sheet resistance of × 10 ¹² Ω □ or more. In this photoelectric conversion device, since the sheet resistance of the electrical insulating layer is high, it is easy to suppress crosstalk.

  A photoelectric conversion device according to a thirty-first invention is included in the photoelectric conversion device according to any one of the first to thirtieth inventions, and is arranged on the substrate to transmit incident light to each of the plurality of organic photoelectric conversion elements. It further has a color filter for defining the wavelength. In this photoelectric conversion device, it is easy to obtain an electrical signal corresponding to a color image.

  A photoelectric conversion device according to a thirty-second invention is included in the photoelectric conversion device according to any one of the first to thirty-first inventions, and is generated at the organic photoelectric conversion element connected to each of the plurality of organic photoelectric conversion elements. It further has signal reading means for reading out the electric signal. Since this photoelectric conversion device includes a signal reading means, it is easy to construct a small image reading device.

  A photoelectric conversion device according to a thirty-third invention is included in the photoelectric conversion device according to any one of the first to thirty-second inventions, and the organic photoelectric conversion layer includes at least an electron donating material and an electron accepting material. It is characterized by that. In this photoelectric conversion device, it is easy to increase the photoelectric conversion efficiency.

  A photoelectric conversion device according to a thirty-fourth invention is included in the photoelectric conversion device according to any one of the first to thirty-third inventions, and further includes a sealing portion that seals each of the plurality of organic photoelectric conversion elements. It is characterized by. In this photoelectric conversion device, the element life of each organic photoelectric conversion element can be easily extended.

  The photoelectric conversion device of the present invention is used as a constituent member of a photoelectric conversion unit in an image reading apparatus such as a scanner or a facsimile that converts image of various objects such as characters and figures into electric signals to obtain image data. The photoelectric conversion unit includes a predetermined light source and an optical system in addition to the photoelectric conversion device. Hereinafter, embodiments of the photoelectric conversion device of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the embodiments described below.

(Embodiment 1)
FIG. 1 is a cross-sectional view schematically showing an example of the photoelectric conversion device of the present invention. In the figure, 1 is incident light, 2 is a substrate, 3 is a color filter, 4 is a protective film for a color filter, 8 is an organic photoelectric conversion element, 9 is a light shielding layer, 11 is a signal readout wiring, and 12 is a signal. A reading means 20 is a photoelectric conversion device.

  The incident light 1 is normally emitted from an artificial light source, and has an ultraviolet light with a wavelength range of about 200 nm to 400 nm, a visible light with a wavelength range of about 400 nm to 700 nm, and a wavelength of about 700 nm to 2500 nm. Infrared light in the region is included.

  The substrate 2 has a pair of main surfaces facing each other and has transparency that allows the incident light 1 to pass through. The substrate 2 is made of, for example, transparent glass or transparent resin.

  The color filter 3 is disposed on one main surface of the substrate 2, and the color filter 3 mainly includes a red filter 3R that mainly transmits red light, a green filter 3G that mainly transmits green light, and mainly blue light. It consists of a blue filter 3B to transmit. The filters 3R, 3G, and 3B for each color are formed in stripes parallel to each other.

  The protective film 4 is formed of, for example, a thermosetting resin or a photocurable resin, covers the color filter 3, and protects the color filter 3 when the organic photoelectric conversion element 8 is formed.

  The organic photoelectric conversion element 8 includes a first electrode 5 formed on the protective film 4, an organic photoelectric conversion unit 6a formed on the first electrode 5, and a first electrode formed on the organic photoelectric conversion unit 6a. 2 electrodes 7a. A large number of organic photoelectric conversion elements 8 are formed on the protective film 4, and the first electrode 5 in each organic photoelectric conversion element 8 is a transparent electrode. These first electrodes 5 are formed, for example, by patterning a desired transparent conductive film into a predetermined shape by combining a photolithography method and an etching method.

  Moreover, the organic photoelectric conversion part 6a in each organic photoelectric conversion element 8 consists of a separate area | region in the organic photoelectric conversion layer 6 arrange | positioned so that each 1st electrode 5 may be covered. One electrode film 7 is formed so as to cover the organic photoelectric conversion layer 6, and a region located above the organic photoelectric conversion unit 6 a in the electrode film 7 is a second electrode 7 a in the organic photoelectric conversion element 8. Function.

  The shape and size of the organic photoelectric conversion element 8 thus configured in plan view are substantially the same as the shape and size of the first electrode 5 in plan view. In other words, the shape and size of the first electrode 5 in plan view are almost the same as those of the organic photoelectric conversion element 8 in plan view.

  The light shielding layer 9 is, for example, an organic polymer material containing a color material such as carbon, chromium (Cr), aluminum (Al), copper (Cu), nickel (Ni), which has excellent light reflectivity or light absorption, It is formed of a metal such as tantalum (Ta) or tungsten (W), or a carbon-based material such as graphite, and restricts the incidence of light (incident light 1) on the organic photoelectric conversion layer 6. The optical density in the light shielding layer 9 is preferably 2.0 or more (light shielding ratio 99% or more). The illustrated light shielding layer 9 is formed on one main surface of the substrate 2. The planar shape of the light shielding layer 9 will be described in detail later with reference to FIG.

  One wiring 11 for signal readout is arranged for each organic photoelectric conversion element 8 and electrically connects the organic photoelectric conversion element 8 and the signal readout means 12. One end of each signal readout wiring 11 is electrically connected to the first electrode 5 in a predetermined organic photoelectric conversion element 8.

  The signal reading unit 12 includes an integrated circuit having functions such as a capacitor function, a switching function, and a reset function, and reads an electric signal generated in each organic photoelectric conversion element 8. The signal reading means 12 can be an arbitrary constituent member.

  FIG. 2 is a schematic view showing a planar arrangement of each organic photoelectric conversion element 8 and the light shielding layer 9 in the photoelectric conversion device 20 shown in FIG. As shown in the figure, in the photoelectric conversion device 20, all the plurality of organic photoelectric conversion elements 8 described above are surrounded in a plan view, and each organic photoelectric conversion element 8 is surrounded in a plan view, A light shielding layer 9 is disposed.

  When the photoelectric conversion device 20 having such a configuration is irradiated with light, light absorption occurs in each organic photoelectric conversion unit 6a, and excitons are formed. The excitons are separated into carriers (holes and electrons) in a very short time, the electrons move to the positive electrode (for example, the second electrode 7a), and the holes move to the negative electrode (for example, the first electrode 5). Thereby, an electromotive force is generated between the first electrode 5 and the second electrode 7a, and as a result, an electromotive force is generated in the organic photoelectric conversion element 8.

  Since the magnitude (strength) of the electromotive force in each organic photoelectric conversion element 8 changes according to the intensity of light incident on the organic photoelectric conversion unit 6a, the electromotive force generated in each organic photoelectric conversion element 8 is By detecting (reading out) the signal reading means 12 through the signal reading wiring 11, desired image data can be obtained. Therefore, by using the photoelectric conversion device 20 as a constituent member of a photoelectric conversion unit in an image reading apparatus such as a facsimile or a scanner, a difference in reflected light intensity due to the presence or absence of information is detected as a difference in electromotive force corresponding thereto, Image data can be obtained.

  The resolution at this time greatly depends on the size, shape accuracy, position accuracy, and the like of each organic photoelectric change element 8, and also greatly depends on the presence or absence of crosstalk.

  In the photoelectric conversion device 20, each first electrode 5 is formed by a method combining the photolithography method and the etching method as described above, and the shape and size of the first electrode 5 in plan view are almost as they are. Since the shape and size of the conversion element 8 in a plan view are obtained, it is easy to miniaturize the individual organic photoelectric change elements 8, and the shape accuracy and position accuracy can be relatively easily increased. Moreover, in the said photoelectric conversion device 20, incidence | injection of the incident light 1 to areas other than the area | region utilized as the organic photoelectric conversion part 6a among the organic photoelectric conversion layers 6 is restrict | limited by the light shielding layer 9, As a result, organic photoelectric conversion Photoelectric conversion in a region other than the region designed as the conversion element 8 is suppressed. Therefore, crosstalk caused by carriers generated in regions other than the organic photoelectric conversion element 8 moving to the organic photoelectric conversion element 8 can be suppressed. Therefore, the photoelectric conversion device 20 can easily achieve high resolution.

  In addition, the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention are not limited to the shape and arrangement | positioning form shown to FIG. 1, 2, It can change variously. Hereinafter, with reference to FIG. 3 to FIG. 14, some photoelectric conversion devices in which the shape and arrangement form of the light shielding layer are different from the above-described photoelectric conversion device 20 will be described. However, in FIGS. 3 to 7, 9, 10, and 12 to 14, the signal readout wiring 11 (see FIG. 1) is not shown. 3 to 14 that are the same as those shown in FIG. 1 are denoted by the same reference numerals as those used in FIG. 1 and description thereof is omitted.

  In the photoelectric conversion device 20A shown in FIG. 3, the first electrode 5 is directly disposed on one main surface of the substrate 2, and the conductive light shielding layer 9a and the first electrodes 5 are separated from each other. They are electrically separated. The light shielding layer 9a is disposed on the main surface so as to surround all the organic photoelectric conversion elements 8 in a plan view and to surround each organic photoelectric conversion element 8 in a plan view. This photoelectric conversion device 20A does not have the color filter 3 (see FIG. 1).

  In the photoelectric conversion device 20B shown in FIG. 4, the first electrode 5 is directly disposed on one main surface of the substrate 2, and each first electrode 5 partially covers the light-insulating layer 9b having electrical insulation. It is what. The light shielding layer 9b is disposed on the main surface so as to surround all the organic photoelectric conversion elements 8 in a plan view and so as to surround each organic photoelectric conversion element 8 in a plan view. In this photoelectric conversion device 20B, when each organic photoelectric conversion element 8 is viewed in plan, the first electrode 5 and the light shielding layer 9b partially overlap, so that the light incident perpendicularly on the substrate 2 is incident obliquely. As for the light, the light can be prevented from entering the region other than the organic photoelectric conversion element 8 (organic photoelectric conversion unit 6a). Therefore, in the photoelectric conversion device 20B, it is easier to suppress the above-described crosstalk than the photoelectric conversion device 20 illustrated in FIG.

  In the photoelectric conversion device 20C shown in FIG. 5, the first electrode 5 is directly disposed on one main surface of the substrate 2, and the light shielding layer 9c having electrical insulation is disposed on the main surface. The first electrode 5 is partially covered. The light shielding layer 9c is disposed so as to surround all the organic photoelectric conversion elements 8 in a plan view and so as to surround each organic photoelectric conversion element 8 in a plan view. Also in this photoelectric conversion device 20C, when each organic photoelectric conversion element 8 is viewed in plan, the first electrode 5 and the light shielding layer 9c partially overlap, so that the light incident perpendicularly to the substrate 2 is incident obliquely. As for the emitted light, the light can be prevented from entering the region other than the organic photoelectric conversion element 8 (organic photoelectric conversion unit 6a). Therefore, also in the photoelectric conversion device 20C, it is easier to suppress the above-described crosstalk than the photoelectric conversion device 20 illustrated in FIG.

  The photoelectric conversion device 20D shown in FIG. 6 has the color filter 3 similarly to the photoelectric conversion device 20 shown in FIG. 1, and the light shielding layer 9d surrounds all of the plurality of organic photoelectric conversion elements 8 in plan view. Thus, each organic photoelectric conversion element 8 is disposed on one main surface of the substrate 2 so as to surround the organic photoelectric conversion element 8 in plan view. In the photoelectric conversion device 20D, the first electrode 5 and the light shielding layer 9d partially overlap each other when the organic photoelectric conversion elements 8 are viewed in plan. For this reason, not only the light vertically incident on the substrate 2 but also the light incident obliquely can be prevented from entering the region other than the organic photoelectric conversion element 8 (organic photoelectric conversion unit 6a). Therefore, also in the photoelectric conversion device 20D, it is easier to suppress the above-described crosstalk than the photoelectric conversion device 20 illustrated in FIG.

  In the photoelectric conversion device 20E shown in FIG. 7, the first electrode 5 is directly disposed on one main surface of the substrate 2, and as shown in FIG. 8, all of the plurality of organic photoelectric conversion elements 8 are in a plan view. The light-shielding layer 9e having electrical insulation is disposed on the main surface so as to surround the individual organic photoelectric conversion elements 8 in plan view. In this photoelectric conversion device 20E, as shown in FIG. 7, the light shielding layer 9e is thicker than the first electrode 5, so that not only the light incident perpendicularly to the substrate 2 but also the obliquely incident light is It can suppress entering into area | regions other than the organic photoelectric conversion element 8 (organic photoelectric conversion part 6a). Therefore, also in the photoelectric conversion device 20E, compared with the photoelectric conversion device 20 shown in FIG. The color filter 3 and the signal reading means 12 (see FIG. 1) are not provided.

  The photoelectric conversion device 20F shown in FIG. 9 has the same structure as the photoelectric conversion device 20 shown in FIG. 1 except that the signal reading means 12 (see FIG. 1) is not provided. In FIG. 9, the light shielding layer is denoted by reference numeral 9f. The shape and arrangement of the light shielding layer in the photoelectric conversion device of the present invention do not depend on whether or not the photoelectric conversion device includes a signal reading unit.

  In the photoelectric conversion device 20G shown in FIG. 10, the first electrode 5 is directly disposed on one main surface of the substrate 2, and as shown in FIG. 11, all of the plurality of organic photoelectric conversion elements 8 are seen in a plan view. A light shielding layer 9g having electrical insulation is disposed on the main surface so as to surround the upper surface. The light shielding layer 9g does not surround each organic photoelectric conversion element 8 in plan view. Further, the color filter 3 (see FIG. 1) is not provided. Each organic photoelectric conversion element 8 is generally distributed and arranged in a predetermined region (hereinafter referred to as “photoelectric conversion region”), but when the organic photoelectric conversion layer 6 is viewed in plan view. When the organic photoelectric conversion layer 6 extends widely to the outside of the photoelectric conversion region, carriers generated by photoelectric conversion in the portion of the organic photoelectric conversion layer 6 that extends to the outside of the photoelectric conversion region This is the main cause of the aforementioned crosstalk. In the photoelectric conversion device 20G, since the light shielding layer 9g is disposed so as to surround all of the plurality of organic photoelectric conversion elements 8 in a plan view, the generation of the above-mentioned carrier that is a main cause of crosstalk can be suppressed. Therefore, the above-described crosstalk is also suppressed in the photoelectric conversion device 20g.

  The photoelectric conversion device 20H shown in FIG. 12 has the color filter 3 similarly to the photoelectric conversion device 20 shown in FIG. 1, and the light shielding layer 9h surrounds all of the plurality of organic photoelectric conversion elements 8 in plan view. In this way, it is arranged on the substrate 2. The light shielding layer 9h does not surround each organic photoelectric conversion element 8 in plan view. Also in this photoelectric conversion device 20H, the above-described crosstalk can be suppressed for the same reason as in the photoelectric conversion device 20G shown in FIG.

  The photoelectric conversion device 20I shown in FIG. 13 has a first electrode 5 directly disposed on one main surface of the substrate 2 and a light shielding layer 9i disposed on the other main surface of the substrate 2. is there. The light shielding layer 9i surrounds all of the plurality of organic photoelectric conversion elements 8 in a plan view and surrounds each organic photoelectric conversion element 8 in a plan view. Also in this photoelectric conversion device 20B, the above-described crosstalk is suppressed as a result that the incident light 1 is suppressed from entering the region other than the organic photoelectric conversion element 8 (organic photoelectric conversion unit 6a).

  A photoelectric conversion device 20J illustrated in FIG. 14 includes the color filter 3 as in the photoelectric conversion device 20 illustrated in FIG. 1, and the light shielding layer 9h includes the color filter 3 of the pair of main surfaces of the substrate 2. It arrange | positions on the main surface on the opposite side to the arrange | positioned main surface. The light shielding layer 9h surrounds all of the plurality of organic photoelectric conversion elements 8 in a plan view and surrounds each organic photoelectric conversion element 8 in a plan view. Therefore, also in the photoelectric conversion device 20B, the above-described crosstalk is suppressed as a result of suppressing the incident light 1 from entering the region other than the organic photoelectric conversion element 8 (organic photoelectric conversion unit 6a).

(Embodiment 2)
In another photoelectric conversion device of the present invention, the above-described crosstalk is suppressed by providing an electrical insulating layer instead of the above-described light shielding layer. In this case, the electrical insulating layer is disposed so as to surround all the first electrodes. The electrical insulating layer at this time is preferably arranged so as to be in contact with each first electrode that defines the outline of the photoelectric conversion region in plan view among all the first electrodes.

  FIG. 15 is a cross-sectional view schematically showing an example of the photoelectric conversion device having the above-described electrical insulation layer, and FIG. 16 shows a planar arrangement of each first electrode and the electrical insulation layer in the photoelectric conversion device shown in FIG. FIG. 15 and 16 that are the same as those shown in FIG. 1 are assigned the same reference numerals as those used in FIG. 1 and description thereof is omitted. In FIG. 15, the signal readout wiring 11 is not shown.

  In the photoelectric conversion device 30 </ b> A shown in FIG. 15, the first electrode 5 is directly arranged on one main surface of the substrate 2, surrounds all the first electrodes 5, and all the first electrodes 5. Among them, an electric insulating layer 25a thicker than the first electrode 5 is disposed so as to be in contact with each first electrode 5 that defines the outline of the photoelectric conversion region in plan view. The photoelectric conversion device 30A is not provided with the color filter 3 and the signal reading means 12 (see FIG. 1).

  In the photoelectric conversion device 30A having such a configuration, since the organic photoelectric conversion layer 6 extends to the outside of the photoelectric conversion region, photoelectric conversion occurs and the carriers are generated also outside the photoelectric conversion region. However, since all the first electrodes 5 are surrounded by the electrically insulating layer 25a that is thicker than the first electrode 5, the first electrode 5 occurs in the organic photoelectric conversion layer 6 that extends to the outside of the photoelectric conversion region. There is substantially no carrier moving from the side surface of the first electrode 5 to the first electrode 5. Therefore, it is possible to suppress the carriers generated by the photoelectric conversion at a place other than the region designed as the organic photoelectric conversion element 8 from moving to the first electrode 5. As a result, the aforementioned crosstalk is suppressed.

  In addition, the shape and arrangement | positioning form of the electrical insulating layer in the photoelectric conversion device of this invention are not limited to the shape and arrangement | positioning form shown in FIG.15 and FIG.16, A various change is possible. Hereinafter, with reference to FIG. 17 to FIG. 20, some photoelectric conversion devices in which the shape or arrangement of the electrical insulating layer is different from the above-described photoelectric conversion device 30 </ b> A will be described. However, in FIG. 17, FIG. 18, and FIG. 20, illustration of the signal readout wiring 11 (see FIG. 1) is omitted. Of the constituent members shown in FIGS. 17 to 20, those common to the constituent members shown in FIG. 1 are given the same reference numerals as those used in FIG. 1, and description thereof is omitted.

  The photoelectric conversion device 30B shown in FIG. 17 has the color filter 3 like the photoelectric conversion device 20 shown in FIG. 1, and the electrical insulating layer 25b surrounds all the first electrodes 5 so as to surround the protective film 4. Is placed on top. The thickness of the electrical insulating layer 25 b is substantially the same as the thickness of the first electrode 5. Also in this photoelectric conversion device 30B, the above-described crosstalk can be suppressed as in the photoelectric conversion device 30A shown in FIG.

  In the photoelectric conversion device 30C illustrated in FIG. 18, the first electrode 5 is directly disposed on one main surface of the substrate 2 and, as illustrated in FIG. 19, surrounds all the first electrodes 5, In addition, the electrical insulating layer 25c is disposed on the main surface so as to surround each of the first electrodes 5. The electrical insulating layer 25 c is thicker than the first electrode 5. In this photoelectric conversion device 30C, carriers generated in the organic photoelectric conversion layer 6 do not substantially move from the side surface of each first electrode 5 to the first electrode 5, so the photoelectric conversion device shown in FIG. The above-described crosstalk is suppressed more than in the conversion device 30A.

  A photoelectric conversion device 30D shown in FIG. 20 has the color filter 3 similarly to the photoelectric conversion device 20 shown in FIG. 1, and the electrical insulating layer 25d surrounds all the first electrodes 5 and is individually The first electrode 5 is disposed on the protective film 4 so as to surround the first electrode 5. The thickness of the electrical insulating layer 25d is substantially the same as the thickness of the first electrode 5. Also in this photoelectric conversion device 30D, the above-described crosstalk is suppressed as compared with the photoelectric conversion device 30A shown in FIG. 15, similarly to the photoelectric conversion device 30C shown in FIG.

(Embodiment 3)
In still another photoelectric conversion device of the present invention, the light shielding layer described in Embodiment 1 and the electrical insulating layer described in Embodiment 2 are used in combination.

  FIG. 21 is a cross-sectional view schematically showing an example of a photoelectric conversion device having the light shielding layer and the electrical insulating layer. In the photoelectric conversion device 50A shown in the figure, the first electrode 5 is directly disposed on one main surface of the substrate 2 and surrounds all the first electrodes 5, and each first electrode 5 is surrounded. An electric insulating layer 45a is disposed on the main surface so as to surround each of the first electrodes 5 so as to surround all the first electrodes 5 in plan view on the electric insulating layer 45a. A light shielding layer 49a is laminated so as to surround it visually.

  The electrical insulating layer 45a covers the edge of the upper surface of each first electrode 5, and the shape and size of the upper surface of the electrical insulating layer 45a are substantially the same as the shape and size of the bottom surface of the light shielding layer 49a. . Also in the photoelectric conversion device 50A configured as described above, the above-described crosstalk can be suppressed. The photoelectric conversion device 50A is not provided with the color filter 3 and the signal reading means 12 (see FIG. 1).

  In the photoelectric conversion device 50 </ b> B shown in FIG. 22, the thickness of the electrical insulating layer 45 b is substantially the same as the thickness of the first electrode 5, and the electrical insulating layer 45 g covers the edge of the upper surface of each first electrode 5. Except for this point, it has the same configuration as the photoelectric conversion device 50A shown in FIG. Also in the photoelectric conversion device 50B, the above-described crosstalk is suppressed.

  A photoelectric conversion device 50C shown in FIG. 23 has the color filter 3 similarly to the photoelectric conversion device 20 shown in FIG. 1, and surrounds all the first electrodes 5 and each of the first electrodes 5. An electric insulating layer 45c is disposed on the protective layer 4 so as to surround the light shielding layer 49c, and a light shielding layer 49c is laminated thereon. The light shielding layer 49c surrounds all the organic photoelectric conversion elements 8 in a plan view and surrounds each organic photoelectric conversion element 8 in a plan view. Also in the photoelectric conversion device 50C, the above-described crosstalk is suppressed.

  In the photoelectric conversion device 50D shown in FIG. 24, the first electrode 5 is directly arranged on one main surface of the substrate 2, and the electric insulating layer 45d is arranged on the main surface, and the light shielding layer 49c is formed thereon. Are stacked. The electrical insulating layer 45d surrounds all the first electrodes 5 but does not surround the individual first electrodes 5. Similarly, the light shielding layer 49c surrounds all the organic photoelectric conversion elements 8 in a plan view, but does not surround each organic photoelectric conversion element 8 in a plan view. Also in the photoelectric conversion device 50D, the above-described crosstalk can be suppressed.

  A photoelectric conversion device 50E shown in FIG. 25 has the color filter 3 similarly to the photoelectric conversion device 20 shown in FIG. 1, and an electrical insulating layer 45e is disposed on the protective layer 4, and a light shielding layer 49e is formed thereon. Are stacked. The electrical insulating layer 45e surrounds all the first electrodes 5 but does not surround the individual first electrodes 5. Similarly, the light shielding layer 49e surrounds all the organic photoelectric conversion elements 8 in a plan view, but does not surround each organic photoelectric conversion element 8 in a plan view. Also in the photoelectric conversion device 50E, the above-described crosstalk is suppressed.

(Embodiment 4)
In the photoelectric conversion device using the organic photoelectric conversion element, the electrode located on the light incident surface side of the pair of electrodes constituting the organic photoelectric conversion element is made of a transparent electrode material or a conductive material that is thin enough to have transparency. It is formed. The signal readout wiring connected to the organic photoelectric conversion element is also usually formed of the same material as the electrode located on the light incident surface side in order to simplify the manufacturing process.

  Therefore, for example, as in the photoelectric conversion device 20 shown in FIG. 1, the organic photoelectric conversion layer 6 is disposed so as to cover the first electrodes 5 of the individual organic photoelectric conversion elements 8. In the photoelectric conversion device having a structure in which one region different from each other is the organic photoelectric conversion portion 6a of each organic photoelectric conversion element 8, the above-mentioned wiring (signal reading wiring 11 shown in FIG. 1) in the organic photoelectric conversion layer 6 Photoelectric conversion also occurs at the location located above, causing carriers to move to the wiring and causing crosstalk.

  In still another photoelectric conversion device of the present invention, the above-described crosstalk is suppressed by arranging a light shielding layer on the signal readout wiring.

  FIG. 26 is a cross-sectional view schematically showing an example of the photoelectric conversion device having the light shielding layer, and FIG. 27 shows the relationship between the organic photoelectric conversion element in the photoelectric conversion device shown in FIG. 26 and the light shielding layer. It is the schematic which shows planar arrangement | positioning. FIG. 28 is a cross-sectional view schematically showing another example of the photoelectric conversion device having the light shielding layer, and FIG. 29 shows the organic photoelectric conversion element in the photoelectric conversion device shown in FIG. It is the schematic which shows planar arrangement | positioning with a light shielding layer. Of the constituent members shown in these figures, those common to the constituent members shown in FIG. 1 are given the same reference numerals as those used in FIG. 1 and description thereof is omitted.

  In the photoelectric conversion device 70 </ b> A shown in FIGS. 26 and 27, a light shielding layer 69 a made of a conductive material or an electrically insulating material is disposed on each of the signal readout wirings 11, and the upper surface of the signal readout wiring 11. Covering. For this reason, the incidence of light on a portion of the organic photoelectric conversion layer 6 located on the signal readout wiring 11 is suppressed, and photoelectric conversion does not occur so much in the portion. As a result, crosstalk caused by carriers generated by photoelectric conversion moving to the signal readout wiring 11 can be suppressed.

  Further, in the photoelectric conversion device 70B shown in FIGS. 28 and 29, a light shielding layer 69b made of a conductive material or a light shielding material is disposed on each of the signal readout wirings 11, and the signal readout wiring 11 Covers the top and sides. For this reason, the incidence of light on the portion of the organic photoelectric conversion layer 6 located on the signal readout wiring 11 is further suppressed, and almost no photoelectric conversion occurs in the region. As a result, crosstalk caused by the carriers generated by photoelectric conversion moving to the signal readout wiring 11 can be suppressed almost completely.

(Embodiment 5)
In still another photoelectric conversion device of the present invention, the crosstalk described in the fourth embodiment is suppressed by disposing an electrical insulating layer on the signal readout wiring.

  FIG. 30 is a cross-sectional view schematically showing an example of a photoelectric conversion device having the above-described electrical insulation layer, and FIG. 31 is a diagram illustrating the organic photoelectric conversion element and the above-described electrical insulation layer in the photoelectric conversion device shown in FIG. FIG. FIG. 32 is a cross-sectional view schematically showing another example of the photoelectric conversion device having the electrical insulating layer, and FIG. 33 shows the organic photoelectric conversion element in the photoelectric conversion device shown in FIG. It is the schematic which shows planar arrangement | positioning with the electrical insulating layer. Of the constituent members shown in these figures, those common to the constituent members shown in FIG. 1 are given the same reference numerals as those used in FIG. 1 and description thereof is omitted.

  In the photoelectric conversion device 80A shown in FIGS. 30 and 31, an electrical insulating layer 75a is disposed on each of the signal readout wirings 11 to cover the upper surface of the signal readout wirings 11. For this reason, even if light enters a portion of the organic photoelectric conversion layer 6 positioned on the signal readout wiring 11 and photoelectric conversion occurs, carriers generated by the photoelectric conversion are the signal readout wiring 11. Is suppressed by the electrically insulating layer 75a, and as a result, crosstalk is suppressed.

  Further, in the photoelectric conversion device 80B shown in FIGS. 32 and 33, a light shielding layer 69b made of a conductive material or a light shielding material is disposed on each of the signal readout wirings 11, and the upper surface and side surfaces of the wiring 11 are arranged. Covering. For this reason, even if light enters a portion of the organic photoelectric conversion layer 6 positioned on the signal readout wiring 11 and photoelectric conversion occurs, carriers generated by the photoelectric conversion are the signal readout wiring 11. Inflow into the liquid crystal is further suppressed by the electrical insulating layer 75a, and as a result, crosstalk is almost completely suppressed.

  The photoelectric conversion device of the present invention has been described with reference to the embodiments. However, as described above, the present invention is not limited to these forms. For example, the material of each constituent member can be appropriately selected according to the performance required for the photoelectric conversion device to be manufactured, the use of the photoelectric conversion device, and the like.

  For example, as the substrate on which the organic photoelectric conversion element is disposed, an inorganic material or an organic material having desired mechanical strength and thermal strength is appropriately selected, and one main surface of the substrate is used as a light incident surface. When used, a transparent substrate is used. The substrate preferably has electrical insulation properties, but may have conductivity in a range that does not hinder the operation of the photoelectric conversion device or depending on the use of the photoelectric conversion device.

Materials for such substrates include (1) soda quartz glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, quartz glass, alkali-free glass, fluoride glass, etc. Inorganic glass, (2) polyethylene terephthalate, polycarbonate, polymethyl methacrylate, polyether sulfone, polyvinyl fluoride, polypropylene, polyethylene, polyacrylate, amorphous polyolefin, organic polymer compound such as fluorine resin, (3) As ₂ Chalcogenide glasses such as S ₃ , As ₄₀ S ₁₀ , S ₄₀ Ge ₁₀ , (4) metal oxides such as zinc oxide, niobium oxide, tantalum oxide, silicon oxide, hafnium oxide, titanium oxide, and metal nitrides such as silicon nitride (5) Pigment Transparent substrate material is colored, and (6) a metal material subjected to an insulating treatment on the surface, and can be used by. Furthermore, a material that transmits only a specific wavelength, a material that converts incident light into light of a specific wavelength by a light-light conversion function, or the like can also be used. In addition to a single-layer structure, the substrate can also have a stacked structure in which a plurality of substrate materials are stacked.

  In the case where a color filter is provided, the color filter is composed of, for example, a plurality of types of primary color or complementary color filters arranged on a transparent substrate. The primary color filter may be composed of a filter of three primary colors of red, green, and blue, and may be composed of a filter of four colors including a fourth color, for example, an orange filter. The color filter is formed by, for example, patterning a layer formed of an organic composition (for example, a color resin) colored with a coloring material such as a desired dye or pigment into a predetermined shape by a photolithography method. It can also be formed by applying a desired organic composition colored with a coloring material in a predetermined pattern by a printing method, an inkjet method, a vapor deposition method, or by depositing it at a predetermined location by an electrodeposition method. Can do. The arrangement of the filters of each color constituting the color filter is not limited to the arrangement shown in FIG. 1 and can be selected as appropriate.

  The protective film that covers the color filter has excellent heat resistance and solvent resistance, as well as flatness, adhesion, transparency, light resistance, heat discoloration resistance, and storage stability. As a material for such a protective film, for example, an acrylic, epoxy, polyimide, siloxane, or alkyl photocurable or thermosetting resin composition or the like is used. When a protective film is formed using a photocurable or thermosetting resin composition, the resin composition is applied by a method such as spin coating to form a coating film, and then applied to the coating film. It is irradiated with light in a predetermined wavelength region and semi-cured and then patterned into a predetermined shape, or heat-treated to be semi-cured and then patterned into a predetermined shape, and then completely cured by light irradiation or heat treatment.

  When the first electrode constituting the organic photoelectric conversion element is a transparent electrode, the materials are (1) indium tin oxide (ITO; including coated ITO), tin oxide, zinc oxide, indium zinc oxide. Transparent conductive oxides such as antimony-doped tin oxide and aluminum-doped zinc oxide, (2) thin films of aluminum, copper, titanium, silver, etc., mixed thin films of these metals, metal thin films such as laminated thin films, (3) polypyrrole , Polyethylenedioxythiophene (hereinafter abbreviated as “PEDOT”), polyphenylene vinylene (hereinafter abbreviated as “PPV”), conductive polymer compounds such as polyfluorene, and the like can be used. The transparent electrode can have a single layer structure or a laminated structure.

  The formation of the transparent electrode may be performed by, for example, forming a film that is the base of the transparent electrode according to a material such as a vacuum vapor deposition method, a resistance heating vapor deposition method, an electron beam vapor deposition method, a sputtering method, or other physical vapor deposition methods, After forming by a polymerization method (such as an electric field polymerization method), the film is patterned into a predetermined shape using a lithography method (such as a photolithography method or an electron beam lithography method) and an etching method. It is also possible to directly form a transparent electrode having a desired shape by a physical vapor deposition method or a polymerization method using a mask having a predetermined shape.

  The transparent electrode desirably has a thickness of 1 nm or more in order to have sufficient conductivity or to prevent nonuniform light incidence on the organic photoelectric conversion part due to the unevenness of the surface of the transparent substrate. In addition, it is desirable that the thickness be 500 nm or less in order to provide sufficient transparency.

  If necessary, a positive electrode buffer layer made of a substance having a work function lower than that of an electron donating material, which will be described later, which is one of organic photoelectric conversion materials, and higher than that of the transparent electrode, may be added to the transparent electrode and the organic photoelectric It can also be interposed between the converters.

  Note that, regardless of whether or not the first electrode is a transparent electrode, the planar shape of the first electrode is not limited to a quadrangle, and may be a polygon other than a quadrangle, an ellipse (including a circle), or the like. A desired shape can be obtained.

  The organic photoelectric change layer is formed using, for example, an electron donating material and an electron accepting material. At this time, examples of the electron donating material include (1) phenylene vinylene and derivatives thereof, fluorene and derivatives thereof (fluorene-based copolymers having a quinoline group or a pyridine group in the skeleton (P0F66, P1F66, PFPV, etc.)), fluorene-containing aryl Polymers such as amine polymers, carbazole and derivatives thereof, indole and derivatives thereof, pyrene and derivatives thereof, pyrrole and derivatives thereof, picoline and derivatives thereof, thiophene and derivatives thereof, acetylene and derivatives thereof, diacetylene and derivatives thereof, and derivatives thereof (2) a group of polymer materials collectively referred to as dendrimers, (3) porphine, tetraphenylporphine copper, phthalocyanine, copper phthalocyanine, titanium phthalocyanine oxide (4) 1,1-bis (4- (di-p-tolylamino) phenyl) cyclohexane, 4,4 ′, 4 ″ -trimethyltriphenylamine, N, N, N ′, N′— Tetrakis (p-tolyl) -p-phenylenediamine, 1- (N, N-di-p-tolylamino) naphthalene, 4,4′-bis (dimethylamino) -2,2′-dimethyltriphenylmethane, N, N, N ′, N′-tetraphenyl-4,4′-diaminobiphenyl, N, N′-diphenyl-N, N′-di-m-tolyl-4,4′-diaminobiphenyl, N-phenylcarbazole, etc. Aromatic tertiary amines of (5) 4-di-p-tolylaminostilbene, 4- (di-p-tolylamino) -4 ′-(4- (di-p-tolylamino) styryl) stilbene, etc. Chiruben compounds, and the like can be used.

  Furthermore, triazole and its derivatives, oxadiazole and its derivatives, imidazole and its derivatives, polyarylalkane and its derivatives, pyrazoline and its derivatives, pyrazolone and its derivatives, phenylenediamine and its derivatives, arylamine and its derivatives, amino Substituted chalcone and derivatives thereof, oxazole and derivatives thereof, styryl anthracene and derivatives thereof, fluorenone and derivatives thereof, hydrazone and derivatives thereof, silazane and derivatives thereof, polysilane aniline copolymers, styrylamine compounds, aromatic dimethylidin compounds Poly-3-methylthiophene can also be used. The electron donating material can be chemically modified to adjust the absorption wavelength characteristic.

  Further, as the above-described electron-accepting material, in addition to the low-molecular and high-molecular materials similar to the above-described electron-donating material, polymers having the following compounds (i) to (vi) as repeating units, (I) oxadiazoles and derivatives thereof such as 1,3-bis (4-tert-butylphenyl-1,3,4-oxadiazolyl) phenylene, (ii) fluorene and derivatives thereof, (iii) anthraquinodimethane and Its derivatives, (iv) diphenylquinone and its derivatives, (v) fullerene and its derivatives (such as [5,6] -phenyl C61 butyric acid methyl ester, [6,6] -phenyl C61 butyric acid methyl ester), (vi) carbon Polymers having nanotubes and their derivatives as repeating units, compounds (i) to (vi) above and other Copolymers with monomers are used. Furthermore, a group of polymer materials collectively referred to as dendrimers can be used. The electron-accepting material can be chemically modified to adjust the absorption wavelength characteristic.

  The organic photoelectric conversion layer can be formed by a vacuum process such as a vacuum deposition method or a sputtering method, or a wet process such as a spin coating method, a dipping method, or an ink jet method, depending on the material used. When the photoelectric conversion layer is formed, it becomes easy to obtain a photoelectric conversion device with low cost and high productivity.

  When an organic photoelectric change layer is formed using an electron-donating organic material and an electron-accepting organic material, these electron-donating material and electron-accepting material may form a mixture with each other or be separated from each other. It may be.

  FIG. 34 is a cross-sectional view schematically showing an example of the organic photoelectric conversion layer. In the organic photoelectric conversion layer 6 shown in the figure, the electron donating material Ed and the electron accepting material Ea are in a mixed state. Here, the above-mentioned “mixture” refers to a liquid or solid phase material placed in a container and added with a solvent as necessary, and then mixed by stirring or the like. This is a spin coating method. And those formed by the inkjet method. In addition, the mixed state of the electron donating material and the electron accepting material does not need to be uniform, and may be mixed nonuniformly or only a part may form a mixture.

  FIG. 35 is a cross-sectional view schematically showing another example of the organic photoelectric conversion layer. In the organic photoelectric conversion layer 6 shown in the figure, the electron donating material Ed and the electron accepting material Ea are separately layered. Each layer may not be completely separated, and a part of the layer between the electron donating material Ed and the electron accepting material 5b may be in a mixed state. When the layer made of the electron donating material Ed and the layer made of the electron accepting material Ea are to be completely separated, for example, a layer made of the electron donating material Ed and a layer made of the electron accepting material Ea Are deposited separately.

  Regardless of whether the electron-donating material Ed and the electron-accepting material Ea form a mixture or are separated from each other, electrons in the carriers generated in the organic photoelectric conversion layer 6 pass through the electron-accepting material Ea. The holes move to the electrode 7a, and the holes move to the first electrode 5 through the electron donating organic material Ed.

  As a material for the second electrode constituting the organic photoelectric conversion element, a material capable of efficiently taking out electrons generated in the organic photoelectric conversion portion is preferable, and a metal such as aluminum, indium, magnesium, titanium, silver, calcium, or strontium. Alternatively, an alloy containing these metals, or a conductive oxide or fluoride containing the above metals is used. In order to increase the photoelectric conversion efficiency in the organic photoelectric conversion unit, so that the light reaching the second electrode can be supplied again to the organic photoelectric conversion unit without contributing to the photoelectric conversion, and contribute to the photoelectric conversion. The second electrode is preferably formed of a material having a high light reflectance.

  Similar to the first electrode described above, the second electrode can have a single-layer structure or a stacked structure. The second electrode can be formed by physical vapor deposition such as resistance heating vapor deposition, electron beam vapor deposition, or sputtering.

  If necessary, it has a work function higher than that of the electron-accepting material constituting the organic photoelectric conversion layer, such as metal fluorides and metal oxides including lithium fluoride, and lower than that of the second electrode. A negative electrode buffer layer made of a substance may be interposed between the second electrode and the organic photoelectric conversion unit.

  The signal readout wiring can be formed of the same material as that of the first electrode described above, or can be formed of the same material as that of the second electrode. When a conductive light shielding layer is provided, the light shielding layer is provided. It can also be formed of the same material. Furthermore, it can be formed of other conductive materials such as gold. In addition, the wiring can be formed using a mixture of a plurality of types of conductive materials or a laminate in which each layer is formed of different conductive materials. When this wiring is formed of the same material as other members (the first electrode, the second electrode, or the light shielding layer), a part or all of the wiring may be formed together with the above members, or separately. You may form in.

  In the case of providing a light shielding layer, the light shielding layer may be an organic polymer material containing a color material such as carbon as described above, or chromium (Cr), aluminum (Al), copper having excellent light reflectivity or light absorbability. It is formed of a metal such as (Cu), nickel (Ni), tantalum (Ta), tungsten (W), or a carbon-based material such as graphite. Alternatively, the light shielding layer can be formed by superimposing an organic polymer material colored in red, an organic polymer material colored in green, and an organic polymer material colored in blue. When using an organic polymer material colored with a coloring material, the organic polymer material used as a base is, for example, photosensitive or thermosetting excellent in light resistance, heat resistance, storage stability, etc., such as polyimide resin Are preferably used. In forming the light shielding layer, a sputtering method, a method combining a photolithography method and an etching method, an electroless plating method, an electrodeposition method, a printing method, or the like is appropriately used depending on the material.

When an electrical insulating layer for suppressing crosstalk is provided, the material of the electrical insulating layer can be an organic polymer material such as polyimide resin, or an inorganic material such as silicon nitride, but the sheet resistance is It is preferably 1 × 10 ¹² Ω □ (ohm square) or more. In consideration of productivity when forming an electrical insulating layer from an organic polymer material, the organic polymer material is preferably a photosensitive resin rather than a thermosetting resin. Moreover, as said inorganic substance, the compound containing a silicon atom is used suitably.

  When the signal reading means is provided in the photoelectric conversion device of the present invention, the number thereof can be set to one or more desired numbers depending on the number of organic photoelectric conversion elements. The number of signal reading means is appropriately selected in consideration of the total number of organic photoelectric conversion elements, the manufacturing cost of the signal reading means, and the like.

  FIG. 36 is a perspective view schematically showing an example of a photoelectric conversion device including a plurality of signal reading means, and FIG. 37 is a partially cutaway perspective view of the photoelectric conversion device shown in FIG. In the photoelectric conversion device 90 shown in these figures, the organic photoelectric conversion elements 8 arranged over 3 rows and 3 columns are regarded as one unit, and one signal reading means 12 is disposed in one unit. The components shown in FIG. 36 or FIG. 37 have already been described with reference to FIG. 1. Therefore, the same reference numerals as those used in FIG. Is omitted.

  In order to obtain a photoelectric conversion device having a long element lifetime of the organic photoelectric conversion element, a sealing portion is provided so as to cover each organic photoelectric conversion element, and oxygen or moisture to each organic photoelectric conversion element is provided by the sealing portion. It is preferable to suppress intrusion. For example, the sealing part can be formed by covering an ultra-shallow box-shaped glass container so as to cover each organic photoelectric conversion element, and fixing the glass container to a substrate with a photo-curing adhesive or the like. In addition, an inorganic film made of silicon oxide, silicon oxynitride, aluminum oxide, silicon nitride, lithium fluoride, or the like, a glass film by a sol-gel method, a thermosetting resin, or photocuring so as to cover each organic photoelectric conversion element The sealing portion can also be formed by forming an organic film made of a functional resin, a silane polymer material having a sealing effect, or the like on the substrate. Furthermore, the sealing portion can also be formed by fixing a flat glass plate with an adhesive so as to cover each organic photoelectric conversion element.

  FIG. 38 is a cross-sectional view schematically illustrating an example of a photoelectric conversion device including a sealing portion. In the photoelectric conversion device 100 shown in the figure, an extremely shallow box-shaped glass container 93 is covered so as to cover each organic photoelectric conversion element 8, and the glass container 93 is fixed to the substrate 2 with an adhesive (not shown). By doing so, the sealing portion 95 is formed. Since the other configuration of the photoelectric conversion device 100 is the same as that of the photoelectric conversion device 20 shown in FIG. 1, the components common to the components shown in FIG. 1 among the components shown in FIG. The same reference numerals as those used in FIG.

  Each photoelectric conversion device described in the first to fourth embodiments uses one main surface of the substrate as the light incident surface, but uses the side opposite to the side on which the substrate is provided as the light incident surface. There may be a configuration to do so. In this case, the positions of the light shielding layer and the electrical insulating layer are appropriately changed so as to suppress the above-described crosstalk.

  The photoelectric conversion device of the present invention can be variously modified, modified and combined in addition to the above. Hereinafter, specific examples of the present invention will be described with reference to examples.

(Example 1)
First, an alkali-free glass plate was prepared as a substrate, and a chromium oxide film was formed on the alkali-free glass plate by DC sputtering in an oxidizing gas atmosphere. Next, after forming an etching mask having a predetermined shape on the chromium oxide film, the chromium oxide film was patterned by wet etching to form a light shielding layer having a predetermined shape. This light shielding layer has an optical density of 4.0 or more (light shielding ratio of 99.99 or more) when the film thickness is 0.1 to 0.2 μm.

  Next, a red color resin is applied onto the alkali-free glass plate to form a coating film. The coating film is pre-baked at 100 ° C., then exposed through a photomask, developed, and striped. A red color resin layer having a thickness of 2 μm patterned was obtained. Similarly, after obtaining a green color resin layer having a thickness of 2 μm and a blue color resin layer having a thickness of 2 μm patterned in a stripe shape, the red, green, and blue color resin layers are fired. A color filter composed of a red filter, a green filter and a blue filter was obtained.

  Next, the thermosetting resin composition is applied by spin coating so as to cover the color filter, and a coating film is formed. After drying the coating film, a photomask having a predetermined shape is formed on the coating film. Formed. Then, the photo-mask is used to selectively expose the dried coating film, followed by development, baking at 200 ° C., and the film thickness (on the color filter) covering the upper and side surfaces of the color filter The protective film of 2 μm was obtained.

  An ITO film having a film thickness of 160 nm was formed on the protective film and the exposed surface of the alkali-free glass plate by sputtering, and then a resist material (OFPR-800 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) was formed on the ITO film by spin coating. Product name)) was applied to form a resist film having a thickness of 10 μm, and this resist film was selectively exposed and developed to obtain a resist pattern having a predetermined shape. Then, the alkali-free glass plate formed up to the resist pattern was immersed in a 50% hydrochloric acid aqueous solution at a liquid temperature of 60 ° C., and the ITO film in the portion where the resist pattern was not formed was removed by etching.

  Thereafter, the resist pattern is removed, and a large number of ITO electrodes arranged in a matrix over 3 rows and 7500 columns, and a signal readout wiring electrically connected to each ITO electrode one by one. I got. Each said ITO electrode is utilized as a 1st electrode in an organic photoelectric conversion element.

  An alkali-free glass plate formed up to the ITO electrode is subjected to ultrasonic cleaning for 10 minutes with pure water, ultrasonic cleaning for 5 minutes with a surfactant (PD-6 (trade name) manufactured by US Orchite), and pure water. After ultrasonic cleaning for 10 minutes was sequentially performed in this order, water adhering to the alkali-free glass plate was removed with a nitrogen blower.

  Next, a mixture of poly (3,4-ethylenedioxythiophene) and polystyrene sulfonate was dropped on an alkali-free glass plate through a filter having an aperture of 0.45 μm, and uniformly applied by a spin coating method. This was heated in a clean oven at 200 ° C. for 30 minutes to form a positive electrode buffer layer covering each of the ITO electrodes.

  Next, a chlorobenzene solution containing poly (2-methoxy-5- (2′-ethylhexyloxy) -1,4-phenylenevinylene) and [5,6] -phenyl C61 butyric acid methyl ester in a weight ratio of 1: 4 Was applied onto the above positive electrode side buffer layer by spin coating, and was heat-treated in a clean oven at 100 ° C. for 30 minutes to form an organic photoelectric conversion layer having a thickness of about 100 nm covering each of the ITO electrodes.

Subsequently, a lithium fluoride film having a film thickness of 2 nm and an aluminum film having a film thickness of about 100 nm as a negative electrode buffer layer in a resistance heating vapor deposition apparatus depressurized to a vacuum of 0.27 mPa (2 × 10 ⁻⁶ Torr) or less. A film was sequentially formed on the organic photoelectric conversion layer in this order. By forming up to the aluminum film, the first electrode (ITO film), the positive electrode buffer layer, the organic photoelectric conversion part composed of one region of the organic photoelectric conversion layer, the negative electrode buffer layer, and the first region composed of one region of the aluminum film. A large number of organic photoelectric conversion elements including two electrodes were formed in a matrix form over 3 rows and 7500 columns.

  After this, an extremely shallow box-shaped object made of glass is prepared, and the box-shaped object is fixed on an alkali-free glass plate with an epoxy-based photocurable adhesive so as to cover each organic photoelectric conversion element and sealed. After forming the part, a total of four signal reading means were mounted on an alkali-free glass plate via an anisotropic conductive film so that each signal reading wiring was connected to a predetermined signal reading means. . Each signal reading means is composed of a semiconductor bare chip on which a predetermined integrated circuit is formed.

  Thus, the target photoelectric conversion device was obtained by carrying out to mounting of the signal reading means. This photoelectric conversion device has a structure in which a sealing portion 95 shown in FIG. 38 is provided in the photoelectric conversion device 90 shown in FIGS.

  Since this photoelectric conversion device uses one separate area in the organic photoelectric conversion layer arranged so as to cover each first electrode as an organic photoelectric conversion unit in each organic photoelectric conversion element, The organic photoelectric change element can be easily miniaturized and the shape accuracy and position accuracy can be relatively easily increased. In addition, since the light-shielding layer is arranged so as to surround all the organic photoelectric conversion elements in plan view and so as to surround each organic photoelectric conversion element in plan view, other than the region designed as the organic photoelectric conversion element The photoelectric conversion at this point is suppressed and crosstalk is also suppressed. As a result, it is easy to achieve high resolution in the photoelectric conversion device.

(Example 2)
A color filter, a protective film, and a first electrode (ITO electrode) were formed in this order on an alkali-free glass plate under the same conditions as in Example 1 except that no light shielding layer was formed, and then each first electrode A polyimide-based photocurable resin composition was applied by a spin coating method so as to cover the film. This coating film is pre-baked at 120 ° C. and then exposed using a photomask having a predetermined shape, followed by development processing and post-baking at 260 ° C. to surround all of the first electrodes and to form individual first electrodes. An electrical insulating layer surrounding the was obtained.

  Thereafter, the positive electrode buffer layer, the organic photoelectric conversion layer, the negative electrode buffer layer, the second electrode, the sealing portion, and the signal reading means are sequentially mounted in this order under the same conditions as in the first embodiment. A photoelectric conversion device having a structure in which a sealing portion and a signal reading unit are further added to the photoelectric conversion device 30D shown in FIG. 20 was obtained. In the photoelectric conversion device, since one organic photoelectric conversion layer is formed so as to cover each first electrode and crosstalk is suppressed by providing the above-described electrical insulating layer, it is easy to achieve high resolution.

(Example 3)
A color filter, a protective film, a first electrode (ITO electrode) and an electrical insulation layer are formed in this order on an alkali-free glass plate under the same conditions as in Example 2, and then implemented on the electrical insulation layer. A light shielding layer was formed under the same conditions as in Example 1. The electrical insulating layer surrounds all of the first electrodes and surrounds the individual first electrodes, and the light shielding layer surrounds all of the first electrodes in plan view and surrounds the individual first electrodes in plan view.

  Thereafter, the positive electrode buffer layer, the organic photoelectric conversion layer, the negative electrode buffer layer, the second electrode, the sealing portion, and the signal reading means are sequentially mounted in this order under the same conditions as in the first embodiment. A photoelectric conversion device having a structure in which a sealing portion and a signal reading unit are further added to the photoelectric conversion device 50C shown in FIG. In the photoelectric conversion device, one organic photoelectric conversion layer is formed so as to cover each first electrode, and crosstalk is suppressed by providing the above-described electrical insulating layer and light shielding layer. Easy to plan.

  Since the photoelectric conversion device of the present invention uses an organic photoelectric conversion element, it is easy to reduce the cost, and it is easy to increase the resolution by suppressing crosstalk. This is useful for manufacturing an image reading apparatus at low cost.

Sectional drawing which shows an example of the photoelectric conversion device of this invention roughly Schematic which shows planar arrangement | positioning of each organic photoelectric conversion element and light shielding layer in the photoelectric conversion device shown in FIG. Sectional drawing which shows schematically the other example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of the light shielding layer in the photoelectric conversion device of this invention Sectional drawing which shows roughly an example of what has an electrical insulating layer instead of the light shielding layer among the photoelectric conversion devices of this invention Schematic which shows planar arrangement | positioning of each 1st electrode and electric insulation layer in the photoelectric conversion device shown in FIG. Sectional drawing which shows schematically the other example of the shape and arrangement | positioning form of an electrically insulating layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of an electrically insulating layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of an electrically insulating layer in the photoelectric conversion device of this invention Sectional drawing which shows schematically the further another example of the shape and arrangement | positioning form of an electrically insulating layer in the photoelectric conversion device of this invention Sectional drawing which shows roughly an example of what has a light shielding layer and an electrically insulating layer among the photoelectric conversion devices of this invention Sectional drawing which shows schematically the other example of what has a light shielding layer and an electrically insulating layer among the photoelectric conversion devices of this invention Sectional drawing which shows schematically the further another example of what has a light shielding layer and an electrically insulating layer among the photoelectric conversion devices of this invention Sectional drawing which shows schematically the further another example of what has a light shielding layer and an electrically insulating layer among the photoelectric conversion devices of this invention Sectional drawing which shows schematically the further another example of what has a light shielding layer and an electrically insulating layer among the photoelectric conversion devices of this invention Sectional drawing which shows roughly an example of what has the light shielding layer arrange | positioned on the wiring for signal readout among the photoelectric conversion devices of this invention Schematic which shows planar arrangement | positioning of the organic photoelectric conversion element and light shielding layer in the photoelectric conversion device shown in FIG. Sectional drawing which shows schematically the other example of what has the light shielding layer arrange | positioned on the wiring for signal readout among the photoelectric conversion devices of this invention Schematic which shows planar arrangement | positioning of the organic photoelectric conversion element and light shielding layer in the photoelectric conversion device shown in FIG. Sectional drawing which shows roughly an example of what has the electric insulation layer arrange | positioned on the wiring for signal readout among the photoelectric conversion devices of this invention Schematic which shows planar arrangement | positioning of the organic photoelectric conversion element and electrical insulation layer in the photoelectric conversion device shown in FIG. Sectional drawing which shows schematically the other example of the thing which has an electric insulation layer arrange | positioned on the wiring for signal readout among the photoelectric conversion devices of this invention Schematic which shows planar arrangement | positioning of the organic photoelectric conversion element and electrical insulation layer in the photoelectric conversion device shown in FIG. Sectional drawing which shows roughly an example of the organic photoelectric converting layer which comprises the photoelectric conversion device of this invention Sectional drawing which shows schematically the other example of the organic photoelectric converting layer which comprises the photoelectric conversion device of this invention The perspective view which shows roughly an example of what was provided with the several signal reading means among the photoelectric conversion devices of this invention 36 is a partially cutaway perspective view of the photoelectric conversion device shown in FIG. Sectional drawing which shows roughly an example of the photoelectric conversion device provided with the sealing part among the photoelectric conversion devices of this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Incident light 2 Board | substrate 3 Color filter 5 1st electrode 6 Organic photoelectric conversion layer 6a Organic photoelectric conversion part 7 Electrode film | membrane 7a 2nd electrode 8 Organic photoelectric conversion element 9, 9a-9j Light-shielding layer 11 Signal reading wiring 12 Signal read-out Means 20, 20A-20J Photoelectric conversion device 25a-25d Electrical insulation layer 30A-30D Photoelectric conversion device 45a-45e Electrical insulation layer 49a-49e Light shielding layer 50A-50E Photoelectric conversion device 69a, 69b Light shielding layer 70A, 70B Photoelectric conversion device 75a , 75b Electrical insulating layer 80A, 80B Photoelectric conversion device 90,100 Photoelectric conversion device 95 Sealing portion Ea Electron accepting material Ed Electron donating material

Claims (34)

A substrate having a pair of principal surfaces facing each other and a plurality of organic photoelectric conversion elements disposed on one principal surface of the substrate, each of the plurality of organic photoelectric conversion elements disposed on the substrate And a second electrode disposed on the organic photoelectric conversion unit. The organic photoelectric conversion unit includes a region of the organic photoelectric conversion layer disposed so as to cover each first electrode, and the second electrode disposed on the organic photoelectric conversion unit. A photoelectric conversion device,
A photoelectric conversion device comprising a light shielding layer that is disposed so as to surround all of the plurality of organic photoelectric conversion elements in a plan view and restricts light from entering the organic photoelectric conversion layer. The photoelectric conversion device according to claim 1, wherein the light shielding layer surrounds each of the plurality of organic photoelectric conversion elements in a plan view. The photoelectric conversion device according to claim 1, wherein the light shielding layer is electrically separated from each of the first electrode and the second electrode. The photoelectric conversion device according to claim 1, wherein the light shielding layer partially overlaps each of the first electrodes. The photoelectric conversion device according to claim 1, wherein the light shielding layer is disposed on any one of the pair of main surfaces of the substrate. A substrate having a pair of principal surfaces facing each other and a plurality of organic photoelectric conversion elements disposed on one principal surface of the substrate, each of the plurality of organic photoelectric conversion elements disposed on the substrate And a second electrode disposed on the organic photoelectric conversion unit. The organic photoelectric conversion unit includes a region of the organic photoelectric conversion layer disposed so as to cover each first electrode, and the second electrode disposed on the organic photoelectric conversion unit. A photoelectric conversion device,
A photoelectric conversion device comprising an electrically insulating layer disposed so as to surround all of the first electrodes. The photoelectric conversion device according to claim 6, wherein the electrical insulating layer surrounds each of the first electrodes. A substrate having a pair of principal surfaces facing each other and a plurality of organic photoelectric conversion elements disposed on one principal surface of the substrate, each of the plurality of organic photoelectric conversion elements disposed on the substrate And a second electrode disposed on the organic photoelectric conversion unit. The organic photoelectric conversion unit includes a region of the organic photoelectric conversion layer disposed so as to cover each first electrode, and the second electrode disposed on the organic photoelectric conversion unit. A photoelectric conversion device,
A light-shielding layer that is arranged so as to surround all of the plurality of organic photoelectric conversion elements in a plan view and restricts the incidence of light to the organic photoelectric conversion layer;
An electrically insulating layer disposed so as to surround all of the first electrodes;
A photoelectric conversion device comprising: The photoelectric conversion device according to claim 8, wherein the light shielding layer is laminated on the electrical insulating layer. 10. The photoelectric conversion device according to claim 8, wherein the light shielding layer surrounds each of the plurality of organic photoelectric conversion elements in a plan view, and the electrical insulating layer surrounds each of the first electrodes. The photoelectric conversion device according to claim 8, wherein the light shielding layer is electrically separated from each of the first electrode and the second electrode. The photoelectric conversion device according to claim 8, wherein the light shielding layer partially overlaps each of the first electrodes. A substrate having a pair of main surfaces opposed to each other, a plurality of organic photoelectric conversion elements arranged on one main surface of the substrate, and a signal readout arranged one by one on each of the plurality of organic photoelectric conversion elements Each of the plurality of organic photoelectric conversion elements includes a first electrode disposed on the substrate and a region of the organic photoelectric conversion layer disposed so as to cover each first electrode. An organic photoelectric conversion unit and a second electrode disposed on the organic photoelectric conversion unit, and the wiring is a photoelectric conversion device connected to the first electrode of the corresponding organic photoelectric conversion element. And
A photoelectric conversion device comprising a light shielding layer disposed on the wiring and covering the wiring. The photoelectric conversion device according to claim 13, wherein the light shielding layer covers an upper surface and a side surface of the wiring. A substrate having a pair of main surfaces opposed to each other, a plurality of organic photoelectric conversion elements arranged on one main surface of the substrate, and a signal readout arranged one by one on each of the plurality of organic photoelectric conversion elements Each of the plurality of organic photoelectric conversion elements includes a first electrode disposed on the substrate and a region of the organic photoelectric conversion layer disposed so as to cover each first electrode. An organic photoelectric conversion unit and a second electrode disposed on the organic photoelectric conversion unit, and the wiring is a photoelectric conversion device connected to the first electrode of the corresponding organic photoelectric conversion element. And
A photoelectric conversion device comprising an electrical insulating layer disposed on the wiring and covering the wiring. The photoelectric conversion device according to claim 15, wherein the electrical insulating layer covers an upper surface and a side surface of the wiring. The photoelectric conversion device according to claim 1, wherein the light shielding layer includes an organic polymer material. The photoelectric conversion device according to claim 17, wherein the organic polymer material is a photosensitive resin. The photoelectric conversion device according to claim 17, wherein the organic polymer material includes a polyimide resin. The photoelectric conversion device according to claim 1, wherein the light shielding layer contains a metal. The photoelectric conversion device according to claim 20, wherein the metal is at least one selected from chromium, aluminum, copper, nickel, tantalum, and tungsten. The photoelectric conversion device according to claim 1, wherein the light shielding layer contains carbon. The optical density of the light shielding layer is 2.0 or more, The photoelectric conversion device according to any one of claims 1 to 5, 8 to 14, and 17 to 22. The photoelectric conversion device according to claim 6, wherein the electrical insulating layer includes an organic polymer material. The photoelectric conversion device according to claim 24, wherein the organic polymer material is a photosensitive resin. The photoelectric conversion device according to claim 24 or 25, wherein the organic polymer material includes a polyimide resin. The photoelectric conversion device according to claim 6, wherein the electrical insulating layer contains an inorganic substance. The photoelectric conversion device according to claim 27, wherein the inorganic substance includes a silicon atom. The photoelectric conversion device according to claim 27 or 28, wherein the inorganic substance includes silicon nitride. 30. The photoelectric conversion device according to any one of claims 6 to 12, 15, 16, and 24 to 29, wherein the electrical insulating layer has a sheet resistance of 1 × 10 ¹² Ω □ or more. 31. The photoelectric conversion device according to claim 1, further comprising a color filter disposed on the substrate and defining a wavelength of incident light to each of the plurality of organic photoelectric conversion elements. . 32. The photoelectric device according to claim 1, further comprising a signal reading unit that is connected to each of the plurality of organic photoelectric conversion elements and reads an electric signal generated by the organic photoelectric conversion element. Conversion device. The photoelectric conversion device according to claim 1, wherein the organic photoelectric conversion layer includes at least an electron donating material and an electron accepting material. The photoelectric conversion device according to claim 1, further comprising a sealing portion that seals each of the plurality of organic photoelectric conversion elements.

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