JP2008067034A - Photoelectric conversion device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which easily obtains image data with high definition at a high operation speed, and a manufacturing method thereof. <P>SOLUTION: When a photoelectric conversion device 30 for performing photoelectric conversion by organic photoelectric transducers is constituted, a plurality of organic photoelectric transducers are arrayed on a substrate 1 like a long plate along its lengthwise direction, and the plurality of organic photoelectric transducers are divided into a plurality of groups along the lengthwise direction, and read circuit parts 5a to 5d for reading out signal charges from respective organic photoelectric transducers are mounted on the substrate 1, for each group. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a photoelectric conversion device that extracts various information such as a shape of an object and an image as an electric signal, and more particularly to a photoelectric conversion device used for a linear image sensor.

  Linear image sensors used in facsimiles, image scanners, and the like can be broadly classified into optical reduction types and contact types. Among these linear image sensors, the contact type linear image sensor has an increasing demand because the original reading optical system can be made much smaller and thinner than the optical reduction type linear image sensor.

  The contact-type linear image sensor reads an original as it is by an equal-magnification optical system, and therefore, for example, a photoelectric conversion device having a length of about 300 mm is required to read an A3-size original. Today, as a photoelectric conversion device in a contact type linear image sensor, a CMOS (Complementary Metal Oxide Semiconductor) system that converts an image into an electric signal by a large number of inorganic photoelectric conversion elements (photodiodes) formed on a single crystal silicon substrate or A CCD (Charge Coupled Device) type is used, and when a long one having a length of about 300 mm is obtained, usually a plurality of long-plate silicon chips on which inorganic photoelectric conversion elements are formed, It is arranged on a straight line.

  In such photoelectric conversion devices, not only a large-scale semiconductor process is required for the production of silicon chips, but also a high-precision technique is required when arranging a plurality of silicon chips on a straight line, so the yield is high. Is low. In addition, since inorganic photoelectric conversion elements cannot be arranged at the joints between the silicon chips, with a resolution of 600 dpi or more where the pixel pitch in the main scanning direction (the pitch between adjacent inorganic photoelectric conversion elements) is about 40 μm, Information cannot be read at locations corresponding to the joints between silicon chips, and sufficient reading quality cannot be obtained.

In recent years, organic photoelectric conversion elements have attracted attention as an alternative to inorganic photoelectric conversion elements. The organic photoelectric conversion element can form a photoelectric conversion part simply by coating a desired organic photoelectric conversion material on, for example, a glass substrate, and can exhibit the same function as an inorganic photoelectric conversion element. It is possible to easily obtain a conversion device. For example, in (Patent Document 1), three types of sensors (organic photoelectric conversion elements) are formed by three types of photoactive organic materials (organic photoelectric conversion materials) having different optical band gaps, and these sensors are used for full-color images. A sensing element for generating the electrical signal is described.
Special Table 2002-502120

  In a CMOS type or CCD type photoelectric conversion device used for a contact type linear image sensor, the longer it is, the longer it takes to read out all the signal charges accumulated in each inorganic photoelectric conversion element. For this reason, if it is attempted to obtain high-definition image data by increasing the resolution not only in the main scanning direction but also in the sub-scanning direction in the contact linear image sensor, the reading speed of the linear image sensor is greatly reduced.

  In the invention of a sensing element using an organic photoelectric conversion element (Patent Document 1), not only means for obtaining high-definition image data at high speed but also a plurality of organic photoelectric conversion elements are stored. Even a specific circuit configuration for reading signal charges is not described.

  The present invention has been made in view of the above, and an object of the present invention is to provide a photoelectric conversion device that easily obtains high-definition image data at a high operating speed and a method for manufacturing the photoelectric conversion device.

  The photoelectric conversion device of the present invention that achieves the above object is a long plate-like substrate, a plurality of organic photoelectric conversion elements aligned on the substrate along the longitudinal direction of the substrate, and the substrate. A plurality of organic photoelectric conversion elements divided into a plurality of groups along the longitudinal direction, and signal charge reading means for reading out signal charges from each of the organic photoelectric conversion elements for each group. is there.

  In addition, in the method of manufacturing a photoelectric conversion device of the present invention that achieves the above object, a plurality of organic photoelectric conversion elements are aligned on the long plate-like substrate along the longitudinal direction of the substrate. A photoelectric conversion in which a pad is arranged corresponding to each of the organic photoelectric conversion elements, and further, a readout wiring for connecting each of the plurality of organic photoelectric conversion elements to a pad corresponding to the organic photoelectric conversion element is arranged A photoelectric conversion substrate manufacturing step for obtaining a substrate, and a plurality of organic photoelectric conversion elements are divided into a plurality of groups along the longitudinal direction, and each of the plurality of groups constitutes a corresponding group. And a mounting step of mounting on the substrate a read circuit portion that reads signal charges from each of the conversion elements via read wirings and pads.

  Since the photoelectric conversion device of the present invention performs photoelectric conversion by an organic photoelectric conversion element, a substrate on which the organic photoelectric conversion element is arranged is a substrate that can easily obtain a long object such as a glass substrate. be able to. In addition, a plurality of organic photoelectric conversion elements arranged on the substrate are divided into a plurality of groups, and signal charges are read out from each of the organic photoelectric conversion elements for each group by the signal charge reading means, so the total number of organic photoelectric conversion elements is large. However, by suppressing the number of organic photoelectric conversion elements in each group, signal charges can be read from all the organic photoelectric conversion elements in a relatively short time.

  Therefore, if a linear image sensor using the photoelectric conversion device of the present invention as the scanning direction is the longitudinal direction of the substrate in the photoelectric conversion device, the resolution in the scanning direction and the sub-scanning direction is high and the operation speed is high. It becomes easy to obtain a fast linear image sensor.

  A photoelectric conversion device according to a first aspect of the present invention includes a long plate-like substrate, a plurality of organic photoelectric conversion elements aligned on the substrate along the longitudinal direction of the substrate, and a plurality of organic photoelectric devices disposed on the substrate. The conversion element is divided into a plurality of groups along the longitudinal direction, and signal charge reading means for reading signal charges from each of the organic photoelectric conversion elements is provided for each group.

  Since this photoelectric conversion device performs photoelectric conversion using an organic photoelectric conversion element, a substrate on which the organic photoelectric conversion element is disposed, for example, a glass substrate that is easy to obtain a long object is used. it can. In addition, a plurality of organic photoelectric conversion elements arranged on the substrate are divided into a plurality of groups, and signal charges are read out from each of the organic photoelectric conversion elements for each group by the signal charge reading means, so the total number of organic photoelectric conversion elements is large. However, by suppressing the number of organic photoelectric conversion elements in each group, signal charges can be read from all the organic photoelectric conversion elements in a relatively short time. If a linear image sensor having the scanning direction in the longitudinal direction of the substrate in this photoelectric conversion device is configured, it becomes easy to obtain a linear image sensor having a high resolution and a high operation speed in each of the scanning direction and the sub-scanning direction.

  In the photoelectric conversion device of the second invention, the signal charge read-out means is provided on the substrate corresponding to each of the plurality of organic photoelectric conversion elements, and on each of the plurality of organic photoelectric conversion elements. Readout wiring arranged one by one on the substrate and connecting the organic photoelectric conversion element and the pad corresponding to the organic photoelectric conversion element, and one corresponding to each of the plurality of groups on the substrate And a readout circuit unit that reads out signal charges from each of the organic photoelectric conversion elements that are arranged and constitutes a corresponding group through readout wirings and pads.

  In this photoelectric conversion device, for example, a semiconductor chip in which a predetermined integrated circuit is formed on a single crystal silicon substrate can be used as an individual readout circuit unit. It is easy to read out signal charges from the group at high speed.

  A photoelectric conversion device according to a third aspect of the present invention further includes an anisotropic conductive film interposed between each of the plurality of pads and a readout circuit portion corresponding to the pads.

  In this photoelectric conversion device, each readout circuit unit is mounted on the substrate via the anisotropic conductive film, so that each readout circuit unit can be mounted with a small mounting area. Therefore, the photoelectric conversion device can be easily downsized.

  In the photoelectric conversion device according to the fourth aspect of the invention, the plurality of organic photoelectric conversion elements have a predetermined number of organic photoelectric conversion elements arranged in a direction orthogonal to the longitudinal direction in plan view, and the repeating unit is the longitudinal direction described above. It is characterized by having an array structure arranged in plural along the direction.

  In the photoelectric conversion device of the present invention, since a plurality of organic photoelectric conversion elements have the above-described arrangement structure, it is easy to increase the integration density.

  The photoelectric conversion device according to a fifth aspect of the present invention is characterized in that the repeating unit is composed of three organic photoelectric conversion elements.

  In this photoelectric conversion device, since the above repeating unit is composed of three organic photoelectric conversion elements, by providing a predetermined optical filter or by appropriately setting the photosensitive wavelength in each organic photoelectric conversion element, Information of one pixel in the full color reproduction image can be obtained by the repetition unit. Therefore, it becomes easy to construct a full-color linear image sensor using the photoelectric conversion device.

  The photoelectric conversion device according to a sixth aspect of the invention is characterized in that each of the pads corresponding to the organic photoelectric conversion elements constituting the repeating unit is arranged in a direction orthogonal to the longitudinal direction in plan view. And

  In this photoelectric conversion device, since each of the pads is arranged as described above, it is easy to arrange all the pads within a relatively narrow range. Therefore, it is easy to reduce the size of the photoelectric conversion device.

  The photoelectric conversion device according to a seventh aspect of the present invention further includes an electrical insulating layer that covers each of the readout wirings and electrically isolates adjacent readout wirings.

  In this photoelectric conversion device, crosstalk between adjacent readout wirings can be prevented by the above-described electrical insulating layer. Further, it is possible to prevent the signal charge from being read out at a place other than the place designed as the organic photoelectric conversion element. Therefore, it is easy to obtain high-quality image data when a linear image sensor is configured using the photoelectric conversion device.

  In the photoelectric conversion device according to an eighth aspect of the invention, the electrical insulating layer electrically separates each readout wiring from organic photoelectric conversion elements other than the organic photoelectric conversion element corresponding to the readout wiring. Features.

  In this photoelectric conversion device, mixing of signal charges between adjacent organic photoelectric conversion elements is prevented by the above-mentioned electrical insulating layer. Therefore, when a linear image sensor is configured using the photoelectric conversion device, a high-quality image is obtained. It becomes easy to obtain data.

  A photoelectric conversion device according to a ninth aspect is characterized in that the electrical insulating layer is in contact with the pad on a side surface of the pad.

  In this photoelectric conversion device, for example, when the signal charge readout means is configured using the readout circuit unit described above, even when the readout circuit unit is mounted on the substrate with an anisotropic conductive film or anisotropic conductive adhesive, the photoelectric conversion device is different. It is prevented that the conductive fine particles in the anisotropic conductive film and the conductive fine particles in the anisotropic conductive adhesive are fitted between the electric insulating layer and the pad and conduction is generated at an undesired location. Therefore, it is easy to obtain high-quality image data when a linear image sensor is configured using the photoelectric conversion device.

  In the photoelectric conversion device of the tenth invention, when the upper surface of the substrate is used as a reference, the height of the upper surface of each of the plurality of pads is higher than the height of the upper surface of the electrical insulating layer around the pads. Features.

  In this photoelectric conversion device, for example, when configuring the signal charge readout means using the readout circuit unit described above, even when the readout circuit unit is mounted on the substrate with an anisotropic conductive film or anisotropic conductive adhesive, the readout is performed. It becomes easy to push down the circuit portion to a desired height position without being obstructed by the electrical insulating layer. Therefore, it is easy to reliably connect the reading circuit unit and the pad.

  The photoelectric conversion device according to an eleventh aspect is characterized in that the electrical insulating layer is made of a photocurable resin.

  In this photoelectric conversion device, since the electrical insulating layer is formed of a photocurable resin, it is easy to form the electrical insulating layer in a relatively short time with high shape accuracy.

  A photoelectric conversion device according to a twelfth aspect is characterized in that the electrical insulating layer has a light shielding property.

  In this photoelectric conversion device, since the electrical insulating layer has a light shielding property, it is possible to easily prevent photoelectric conversion at a place other than the place designed as the organic photoelectric conversion element. Therefore, it is easy to obtain high-quality image data when a linear image sensor is configured using the photoelectric conversion device.

  A photoelectric conversion device according to a thirteenth invention is characterized in that the electrical insulating layer is a silicon nitride film.

  In this photoelectric conversion device, unlike the case where the electrical insulating layer is formed of a resin, the solvent is not substantially released from the electrical insulating layer, so that the performance deterioration of the organic photoelectric conversion element can be suppressed.

  In the photoelectric conversion device according to the fourteenth aspect, each of the plurality of organic photoelectric conversion elements includes an anode, a photocurable resin layer covering an inner edge of the anode in plan view, and an organic photoelectric conversion formed on the anode. And a cathode covering the organic photoelectric conversion layer.

  In this photoelectric conversion device, the effective area of the photoelectric conversion element is substantially defined by the photocurable resin layer. Since the photocurable resin can be patterned by an exposure process using a mask having a predetermined shape and a subsequent development process without going through an etching process, the shape accuracy can be easily improved as compared with the case of using an etching process. Therefore, it is easy to fit the above effective area within the allowable range in design, and it becomes easy to obtain high-quality image data when a linear image sensor is configured using the photoelectric conversion device. In addition, unstable current from the anode end (edge portion) can be reduced.

  The photoelectric conversion device according to the fifteenth aspect of the present invention further includes an optical filter unit that is disposed in an optical path of incident light to each of the plurality of organic photoelectric conversion elements and transmits light in a predetermined wavelength region in the incident light. Features.

  In this photoelectric conversion device, since the optical filter unit is included, it is easy to prevent light in an undesired wavelength range from entering the organic photoelectric conversion element. Therefore, it is easy to obtain high-quality image data when a linear image sensor is configured using the photoelectric conversion device.

  In the photoelectric conversion device according to a sixteenth aspect of the present invention, the optical filter section includes a red filter that transmits light in a red wavelength range in incident light, a green filter that transmits light in a green wavelength range, and light in a blue wavelength range. It includes a blue filter that transmits light.

  Since this photoelectric conversion device has the optical filter section described above, it is possible to obtain information for one pixel in a full-color reproduced image. Therefore, it becomes easy to construct a full-color linear image sensor using the photoelectric conversion device.

  According to a seventeenth aspect of the present invention, there is provided a method for producing a photoelectric conversion device in which a plurality of organic photoelectric conversion elements are arranged and arranged along a longitudinal direction of a long plate-like substrate, and each of the plurality of organic photoelectric conversion elements is arranged. A photoelectric conversion substrate for obtaining a photoelectric conversion substrate in which a pad is disposed corresponding to each of the plurality of organic photoelectric conversion elements, and a readout wiring for connecting each of the plurality of organic photoelectric conversion elements to a pad corresponding to the organic photoelectric conversion element is disposed The production process and a plurality of organic photoelectric conversion elements are divided into a plurality of groups along the longitudinal direction, and each one of the plurality of groups is separated from each of the organic photoelectric conversion elements constituting the corresponding group. And a mounting step of mounting a read circuit portion for reading signal charges on the substrate via the read wiring and the pad. According to this manufacturing method, the above-described photoelectric conversion device of the present invention can be obtained.

  Hereinafter, embodiments of the photoelectric conversion device and the manufacturing method thereof according to the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
In the photoelectric conversion device of the present invention, as described above, a plurality of organic photoelectric conversion elements are arranged on a long plate-like substrate, and the plurality of organic photoelectric conversion elements are divided into a plurality of groups and a signal charge is assigned to each group. It is to read. Hereinafter, the photoelectric conversion device of the present invention will be described in detail with reference to FIGS.

  FIG. 1 is a plan view schematically showing an example of the photoelectric conversion device of the present invention. In the figure, reference numeral 1 is a transparent substrate, 2 is a photoelectric conversion section including a plurality of organic photoelectric conversion elements, 3 is a cathode common to each organic photoelectric conversion element, 4 is a readout wiring, and 5a to 5d are readout circuit sections, respectively. , 6 is a circuit board, 7 is a first wiring for connecting each readout circuit section and the circuit board 6, 8 is a second wiring for connecting adjacent readout circuit sections, and 30 is a photoelectric conversion device.

  The photoelectric conversion device 30 shown in the figure is used for a linear image sensor. In the photoelectric conversion device 30, the photoelectric conversion unit 2 is provided on a long plate-like transparent substrate 1, and four readouts are provided outside the photoelectric conversion unit 2. Circuit portions 5a to 5d are arranged. The photoelectric conversion unit 2 includes a plurality of organic photoelectric conversion elements (not shown in FIG. 1) arranged in alignment along the longitudinal direction of the transparent substrate 1, and is shielded by a sealing unit (not shown). ing. The individual organic photoelectric conversion elements constituting the photoelectric conversion unit 2 are divided into a plurality of groups along the longitudinal direction of the transparent substrate 1, and are connected to predetermined read circuit units 5 a to 5 d for each group via the read wiring 4. Has been. Each readout circuit section 5a to 5d constitutes a signal charge readout means together with each readout wiring 4 and each pad described later.

  Each of the readout circuit units 5a to 5d is, for example, a semiconductor bare chip on which a predetermined integrated circuit is formed, and these readout circuit units 5a to 5d are connected to signal charges from the corresponding organic photoelectric change elements via the readout wirings 4 respectively. And a predetermined signal is created based on the signal charge. This signal is sent to the circuit board 6 via the first wiring 7. A predetermined semiconductor chip is mounted on the circuit board 6, and the semiconductor chip generates image data by synthesizing the signals sent from the individual readout circuit units 5 a to 5 d, and This is supplied to an external circuit (not shown) to be connected.

  FIG. 2 is a schematic view of the IV-IV cross section shown in FIG. As shown in the figure, in the photoelectric conversion unit 2, an optical filter unit 10 composed of a red filter 10R, a green filter 10G, and a blue filter 10B is disposed on a transparent substrate 1, and a protective layer 11 is interposed therebetween. The organic photoelectric conversion element anodes 12r, 12g, and 12b, the organic photoelectric conversion layer 13, and the organic photoelectric conversion element cathode 3 (hereinafter abbreviated as "cathode 3") are provided.

  An organic photoelectric change element anode 12r (hereinafter abbreviated as “anode 12r”) is disposed above the red filter 10R, and an organic photoelectric change element anode 12g (hereinafter “anode 12g”) is disposed above the green filter 10G. (Abbreviated)), and an organic photoelectric change element anode 12b (hereinafter abbreviated as "anode 12b") is disposed above the blue filter 10B. One anode 12r, 12g, or 12b is disposed in each photoelectric conversion element, and one organic photoelectric conversion layer 13 is formed so as to cover each anode 12r, 12g, 12b.

  The cathode 3 is disposed so as to cover the organic photoelectric conversion layer 13. As described above, the cathode 3 is used in common for all organic photoelectric conversion elements, and is composed of one conductive layer. By one anode 12r, 12g or 12b, a region located on the anode 12r, 12g or 12b in the organic photoelectric conversion layer 13, and a region located on the anode 12r, 12g or 12b in the cathode 3, One organic photoelectric conversion element is configured. An extremely shallow box-shaped sealing portion 15 is provided so as to cover all the organic photoelectric conversion elements, thereby shielding each organic photoelectric conversion element.

  The readout wiring 4 corresponding to each organic photoelectric conversion element extends from above the protective layer 11 to below the predetermined readout circuit portion 5a, 5b, 5c or 5d, and the end on the organic photoelectric change element side is It is connected to a predetermined anode 12r, 12g or 12b. Further, the end on the read circuit portion side of each read wiring 4 is wide, and pads 17r, 17g, or 17b are formed on the wide region. One pad 17r corresponds to one anode 12r, one pad 17g corresponds to one anode 12g, and one pad 17b corresponds to one anode 12b.

  The electrical insulating layer 19 covers each readout wiring 4 to prevent crosstalk between adjacent readout wirings 4 and from the organic photoelectric conversion elements other than the organic photoelectric conversion element to which the readout wiring 4 corresponds. The readout wiring 4 is electrically separated to prevent mixing of signal charges. The electrical insulating layer 19 does not cover the pads 17r, 17g, and 17b, and is in contact with the pad pads 17r, 17g, and 17b on the side surfaces of the pads 17r, 17g, and 17b. When the electrical insulating layer 19 is formed in this way, even when the readout circuit portions 5a to 5d are mounted on the transparent substrate 1 by the anisotropic conductive film 21 described later, the conductive fine particles in the anisotropic conductive film 21 are not removed. It is possible to prevent electrical conduction at undesired locations by fitting between the electrical insulating layer 19 and the pads 17r, 17g or 17b. As a result, it is easy to obtain high-quality image data when a linear image sensor is configured using the photoelectric conversion device 30.

  Each of the readout circuit units 5a to 5d (only the readout circuit unit 5c appears in FIG. 2) has a plurality of bumps Bu on one side, and the transparent substrate 1 via the anisotropic conductive film 21. Flip chip bonded on top. That is, the individual readout circuit units 5a to 5d connect the predetermined bumps Bu and the predetermined pads 17r, 17g, or 17b disposed on the transparent substrate 1 through the anisotropic conductive film 21, so that It is mounted on the transparent substrate 1. The anisotropic conductive film 21 covers the pads 17r, 17g, and 17b and also covers a region of the electrical insulating layer 19 on the pads 17r, 17g, and 17b side. Reference numeral “23” in FIG. 2 indicates a pad formed on one end of the second wiring 8 (see FIG. 1). The pad 23 is connected to a predetermined bump Bu in the readout circuit unit 5c through the anisotropic conductive film 21.

  FIG. 3 is a schematic diagram showing a planar arrangement of the anodes 12r, 12g, 12b in the photoelectric conversion unit 2, and schematically shows a planar arrangement of the anodes 12r, 12g, 12b in the region A shown in FIG. Show. Among the constituent members shown in the figure, those already described with reference to FIG. 1 or FIG. 2 are given the same reference numerals as those used in FIG. 1 or FIG.

  As shown in FIG. 3, in the photoelectric conversion unit 2, three anodes 12 r, 12 g, 12 b arranged in a direction orthogonal to the longitudinal direction of the transparent substrate 1 in plan view are used as a repeating unit, and this repeating unit is the transparent substrate 1. A plurality of them are arranged along the longitudinal direction. Since the planar shape of the organic photoelectric conversion element is substantially defined by the planar shape of the anode in the organic photoelectric conversion element, each organic photoelectric conversion element when the anodes 12r, 12g, and 12b are arranged as illustrated is shown. Is an array structure in which three organic photoelectric conversion elements arranged in a direction perpendicular to the longitudinal direction of the transparent substrate 1 are used as repeating units, and a plurality of repeating units are arranged along the longitudinal direction of the transparent substrate 1. Eggplant. In the illustrated example, each anode 12r, 12g, 12b and each readout wiring 4 are formed by patterning one transparent conductive film.

  FIG. 4 is a schematic diagram showing a planar arrangement of the pads 17r, 17g, and 17b, and schematically shows a planar arrangement of the pads 17r, 17g, and 17b in the region B shown in FIG. Among the constituent members shown in the figure, those already described with reference to FIG. 1 or FIG. 2 are given the same reference numerals as those used in FIG. 1 or FIG.

  As shown in FIG. 4, the three pads 17r, 17g, and 17b corresponding to the three organic photoelectric conversion elements constituting the above-described repeating unit are arranged in a direction orthogonal to the longitudinal direction of the transparent substrate 1 in plan view. Are arranged. Each of the pads 17r corresponding to the anode 12r (see FIG. 3), each of the pads 17g corresponding to the anode 12g (see FIG. 3), and each of the pads 17b corresponding to the anode 12b (see FIG. 3), The transparent substrates 1 are arranged in a line along the longitudinal direction.

  Between the two pads 17b and 17b adjacent to each other in the longitudinal direction, a total of two readout wirings 4 corresponding to the pads 17g and 17r are located, and the two pads adjacent to each other in the longitudinal direction are located. One readout wiring 4 corresponding to the pad 17r is located between 17g and 17g. Further, the readout wiring 4 is not located between the two pads 17r and 17r adjacent to each other in the longitudinal direction. Note that reference numeral “25” in FIG. 4 indicates a pad to which one end of the first wiring 7 is connected.

  5 and 6 are cross-sectional views schematically showing the positional relationship between the anode and the electrical insulating layer in the photoelectric conversion unit. 5 corresponds to a cross section taken along the line VV shown in FIG. 3, and FIG. 6 corresponds to a cross section taken along the line IV-IV shown in FIG. Among the constituent members shown in these drawings, those already described with reference to FIG. 1 or FIG. 2 are denoted by the same reference numerals as those used in FIG. 1 or FIG. .

  As shown in FIG. 5 or FIG. 6, in the photoelectric conversion unit 2, the anodes 12 r, 12 g, 12 b and the readout wirings 4 are electrically separated by the electrical insulating layer 19 except for these connection points. At the same time, the readout wirings 4 are electrically separated from each other by the electrical insulating layer 19. By disposing the electrical insulating layer 19 in this way, each readout wiring 4 is from an organic photoelectric conversion element (organic photoelectric conversion layer 13) other than the organic photoelectric conversion element (organic photoelectric conversion layer 13) corresponding to the readout wiring 4. The electrical insulating layer 19 prevents signal charges from being read, mixing of signal charges between adjacent organic photoelectric conversion elements (organic photoelectric conversion layers 13), and crosstalk between adjacent read wirings 4. .

  FIG. 7 is a cross-sectional view schematically showing the positional relationship between each readout wiring, the pad to which the readout wiring is connected, and the top surface of the electrical insulating layer, and taken along the line VII-VII shown in FIG. It corresponds to a cross section. Among the constituent members shown in the figure, those already described with reference to FIG. 1 or FIG. 2 are given the same reference numerals as those used in FIG. 1 or FIG.

  As shown in FIG. 7, the height of the upper surface of each pad 17 r, 17 g, 17 b when the upper surface of the transparent substrate 1 is used as a reference surface is higher than the height of the upper surface of the electrical insulating layer 19. For this reason, when the read circuit portions 5a to 5d (only the read circuit portion 5c appears in FIG. 7) are mounted on the transparent substrate 1 through the anisotropic conductive film 21, The read circuit portions 5a to 5d can be easily pushed down to a desired height position without being obstructed by the electrical insulating layer 19. As a result, it becomes easy to reliably connect the bump Bu and the pad 17R, 17g or 17b via the anisotropic conductive film 21.

  Since the photoelectric conversion device 30 having the above-described structure has an organic photoelectric conversion element disposed on the transparent substrate 1, it is easy to increase the length. In addition, the organic photoelectric conversion elements arranged on the transparent substrate 1 are divided into a plurality of groups, and signal charges are read from each of the organic photoelectric conversion elements for each group by the signal charge reading means (reading circuit units 5a to 5d). Even if the total number of organic photoelectric conversion elements is large, signal charges can be read from all the organic photoelectric conversion elements in a relatively short time by suppressing the number of organic photoelectric conversion elements in each group.

  Therefore, if a linear image sensor having the scanning direction in the longitudinal direction of the transparent substrate 1 in the photoelectric conversion device 30 is configured using the photoelectric conversion device 30, the resolution in the scanning direction and the sub-scanning direction is high and the operation is performed. It becomes easy to obtain a linear image sensor having a high speed.

  The photoelectric conversion device of the present invention that exhibits such a technical effect can be obtained, for example, by the method for manufacturing a photoelectric conversion device of the present invention described in Embodiment 2 below.

(Embodiment 2)
The method for producing a photoelectric conversion device of the present invention includes a photoelectric conversion substrate manufacturing step and a mounting step. Hereinafter, taking the case where the photoelectric conversion device 30 (see FIG. 1) described in Embodiment 1 is obtained as an example, the reference numerals used in FIG. 1 or FIG. Describe.
<Photoelectric conversion substrate manufacturing process>
In the photoelectric conversion substrate manufacturing step, a plurality of organic photoelectric conversion elements are aligned on the long plate-shaped substrate along the longitudinal direction of the substrate, and one corresponding to each of the plurality of organic photoelectric conversion elements. Thus, a photoelectric conversion substrate is obtained in which the pads are arranged, and further, the readout wiring for connecting each of the plurality of organic photoelectric conversion elements to the pads corresponding to the organic photoelectric conversion elements is arranged. This photoelectric conversion substrate manufacturing process is performed, for example, in the following first to fifth sub-processes.

  In the first sub-process, as shown in FIG. 8, the optical filter portion 10 and the protective layer 11 that covers the optical filter portion 10 are formed on one side of the long plate-like substrate 1 </ b> A.

The material of the substrate 1A is (1) inorganic glass such as soda quartz glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, quartz glass, alkali-free glass, fluoride glass, etc. (2) Organic polymer compounds such as polyethylene terephthalate, polycarbonate, polymethyl methacrylate, polyether sulfone, polyvinyl fluoride, polypropylene, polyethylene, polyacrylate, amorphous polyolefin, fluorine resin, (3) As ₂ S ₃ (4) Zinc oxide, niobium oxide, tantalum oxide, silicon oxide, hafnium, metal oxides such as titanium oxide, and metal nitrides such as silicon nitride, (40) As ₄₀ S ₁₀ and S ₄₀ Ge ₁₀ 5) Colored with pigments Akira substrate material, and (6) a metal material subjected to an insulating treatment on the surface, or the like can be used. Furthermore, a material that transmits only light of a specific wavelength, a material that converts incident light into light of a specific wavelength by a light-light conversion function, or the like can also be used. The transparent substrate 1 may have a single layer structure or a stacked structure in which a plurality of substrate materials are stacked.

  Here, since the case where the photoelectric conversion device 30 (see FIG. 1) described in Embodiment 1 is obtained will be described, a transparent substrate is used as the substrate 1A. Hereinafter, the substrate 1A is referred to as a “transparent substrate 1”.

  The optical filter unit 10 is formed, for example, by patterning a layer formed of an organic composition (for example, a color resin) colored with a color material such as a desired dye or pigment into a predetermined shape by a photolithography method. It can also be formed by coating a desired organic composition colored with a coloring material in a predetermined pattern by a printing method, an inkjet method, a vapor deposition method, or by depositing it on a predetermined location by an electrodeposition method. Can do.

  On the other hand, the protective layer 11 is excellent in heat resistance and solvent resistance, as well as in flatness, adhesion, transparency, light resistance, heat discoloration resistance, storage stability, and the like. Preferably, as a raw material of such a protective layer 11, for example, an acrylic, epoxy, polyimide, siloxane, alkyl-based photocurable or thermosetting resin composition or the like is used. When forming the protective layer 11 using a photocurable or thermosetting resin composition, the resin composition is applied by a method such as spin coating to form a coating film, and then the coating film is formed. The film is irradiated with light in a predetermined wavelength region and semi-cured and then patterned into a predetermined shape, or heat-treated to be semi-cured and then patterned into a predetermined shape, and then completely cured by light irradiation or heat treatment.

  In the second sub-process, as shown in FIG. 9, the anodes 12r, 12g, and 12b, the readout wiring 4, the first wiring 7 (not shown in FIG. 9), and the second wiring 8 constituting the organic photoelectric conversion element. Form.

  As materials of these anodes 12r, 12g, 12b and each wiring (reading wiring 4, first wiring 7, and second wiring 8), (1) indium tin oxide (ITO; including coating type ITO), Transparent conductive oxides such as tin oxide, zinc oxide, indium zinc oxide, antimony-doped tin oxide, and aluminum-doped zinc oxide, (2) thin films of metals such as aluminum, copper, titanium, and silver, and mixed thin films of these metals , Metal thin films such as laminated thin films, (3) conductive polymers such as polypyrrole, polyethylenedioxythiophene (hereinafter abbreviated as “PEDOT”), polyphenylene vinylene (hereinafter abbreviated as “PPV”), polyfluorene, and the like. Compounds, etc. can be used.

  The anodes 12r, 12g, 12b and wirings are formed by, for example, physical vapor deposition such as vacuum deposition (resistance heating deposition, electron beam deposition, etc.) or sputtering according to the material of the original film. Or by various polymerization methods (electric field polymerization method, etc.) and then patterning the film into a predetermined shape using a lithography method (a photolithography method, an electron beam lithography method, etc.) and an etching method. Done. It is also possible to directly form the anodes 12r, 12g, 12b having desired shapes and the respective wirings by a physical vapor deposition method or a polymerization method using a mask having a predetermined shape.

  The anodes 12r, 12g, 12b and the wirings can have a single layer structure or a laminated structure. In order to provide sufficient conductivity or to prevent uneven light incidence on the organic photoelectric conversion layer 13 (see FIG. 2) due to unevenness on the surface of the transparent substrate 1, the film thickness is set to 1 nm or more. It is desirable. Further, each of the anodes 12r, 12g, and 12b desirably has a thickness of 500 nm or less in order to provide sufficient transparency.

  In the third sub-process, as shown in FIG. 10, pads 17r, 17g or 17b connected to the read wiring 4 and pads 23 connected to the second wiring 8 (not shown in FIG. 10) are formed. To do. When it is necessary to provide a pad connected to the first wiring 7, the pad is also formed in the third sub-process.

  Each pad is formed, for example, by depositing a conductive material such as gold, aluminum, ITO or the like at a predetermined position by a physical vapor deposition method. Or it forms by apply | coating the conductive paste containing conductive materials, such as gold | metal | money, aluminum, ITO, to a predetermined location, and baking.

In the fourth sub-process, as shown in FIG. 11, an insulating layer 19 </ b> A that forms the basis of the electrical insulating layer 19 (see FIG. 2) is formed. The insulating layer 19A preferably has a resistivity of about 1 × 10 ⁹ Ω · cm or more. Such an insulating layer 19A is made of, for example, an organic material such as a photocurable resin, silicon nitride, or the like. It is formed of an inorganic material. In the case where the insulating layer 19A is formed of an organic material, a light-shielding property may be imparted by adding a desired color material to the organic material. The formation method of the insulating layer 19A is appropriately selected according to the material, such as a coating method, a spin coating method, a physical vapor deposition method, a chemical vapor deposition method, or the like.

  In the fifth sub-process, after the insulating layer 19A formed in the fourth sub-process is patterned to obtain the electrical insulating layer 19, the organic photoelectric conversion layer 13 and the cathode 3 are formed on the transparent substrate 1 as shown in FIG. The sealing portion 15 is formed so as to cover them.

  The electrical insulating layer 19 is formed, for example, by patterning the above-described insulating layer 19A into a predetermined shape by a lithography method (such as a photolithography method or an electron beam lithography method).

  The organic photoelectric conversion layer 13 can be configured using, for example, an electron donating organic material and an electron accepting organic material. These electron donating organic material and electron accepting organic material may form a mixture with each other or may be separated from each other.

  Here, the above-mentioned “mixture” refers to a liquid phase or solid phase material put into a container, added with a solvent as necessary, and mixed by stirring or the like, and this is a spin coating method. And those formed by an inkjet method or the like. Further, the mixed state of the electron-donating organic material and the electron-accepting organic material does not need to be uniform, and may be mixed nonuniformly or only a part may form a mixture. On the other hand, when the electron-donating organic material and the electron-accepting organic material are separated from each other, the layers may not be completely separated from each other. These layers may form a mixed state at the interface with the containing layer. For example, by forming the layer containing an electron donating organic material and the layer containing an electron accepting organic material by different methods, the organic photoelectric conversion layer 13 in which these layers are completely separated from each other can be obtained. Specific examples of the electron donating organic material and the electron accepting organic material will be described later.

  Such an organic photoelectric conversion layer 13 can be formed by a vacuum process such as a vacuum deposition method or a sputtering method, or a wet process such as a spin coating method, a dipping method, or an ink jet method, depending on the organic material used. When the organic photoelectric conversion layer 13 is formed by a wet process, it is easy to obtain the photoelectric conversion device 30 with low cost and high productivity.

  The material of the cathode 3 is preferably a material that can efficiently extract electrons generated in the organic photoelectric conversion layer 13, such as aluminum, indium, magnesium, titanium, silver, calcium, strontium, tungsten, chromium, barium, nickel, and the like. Metals, alloys containing these metals, or conductive oxides or fluorides containing the above metals are used. From the viewpoint of increasing the photoelectric conversion efficiency in the organic photoelectric conversion layer 13, the light reaching the cathode 3 can be supplied again to the organic photoelectric conversion layer 13 without contributing to the photoelectric conversion so as to contribute to the photoelectric conversion. The cathode 3 is preferably formed of a conductive material having a high light reflectance.

  Similarly to the anodes 12r, 12g, and 12b described above, the cathode 3 can have a single layer structure or a laminated structure. The cathode 3 can be formed by physical vapor deposition such as resistance heating vapor deposition, electron beam vapor deposition, or sputtering.

  As a material of the sealing portion 15, a desired inorganic material or organic material such as glass or resin having a desired water vapor transmission rate and oxygen transmission rate is used. For example, the sealing portion 15 can be obtained by forming a recess in a flat plate made of a desired inorganic material or organic material and forming the flat plate into an extremely shallow box shape. Such a sealing part 15 is made of, for example, an inorganic adhesive such as soft wax having a desired water vapor transmission rate and oxygen transmission rate, a photo-curing adhesive, a thermosetting adhesive, a two-component adhesive, or the like. It is fixed on the transparent substrate 1 with an organic adhesive.

  Further, an inorganic film made of silicon oxide, silicon oxynitride, aluminum oxide, silicon nitride, lithium fluoride, etc., a glass film by a sol-gel method, or thermosetting so as to cover the cathode 3 and the organic photoelectric conversion layer 13. It is also possible to form the sealing portion by forming an organic film made of a resin, a photocurable resin, a silane polymer material having a sealing effect, or the like.

  Thus, by forming even a sealing part, photoelectric conversion board 30A provided with a plurality of organic photoelectric conversion elements is obtained.

The above-mentioned electron donating organic material constituting the organic photoelectric conversion layer 13 includes (1) phenylene vinylene and derivatives thereof, fluorene and derivatives thereof (fluorene copolymers having a quinoline group or a pyridine group in the skeleton (P0F66, P1F66). Fluorene-containing arylamine polymers, carbazole and derivatives thereof, indole and derivatives thereof, pyrene and derivatives thereof, pyrrole and derivatives thereof, picoline and derivatives thereof, thiophene and derivatives thereof, acetylene and derivatives thereof, diacetylene And polymers such as derivatives thereof and derivatives thereof, (2) a group of polymer materials collectively referred to as dendrimers, (3) porphine, tetraphenylporphine copper, phthalocyanine, copper phthalocyanine, tita Polyphyrin compounds such as um phthalocyanine oxide, (4) 1,1-bis (4- (di-p-tolylamino) phenyl) cyclohexane, 4,4 ′, 4 ″ -trimethyltriphenylamine, N, N, N ′, N′-tetrakis (p-tolyl) -p-phenylenediamine, 1- (N, N-di-p-tolylamino) naphthalene, 4,4′-bis (dimethylamino) -2,2′-dimethyltriphenylmethane , N, N,
N ′, N′-tetraphenyl-4,4′-diaminobiphenyl, N, N′-diphenyl-
Aromatic tertiary amines such as N, N′-di-m-tolyl-4,4′-diaminobiphenyl, N-phenylcarbazole, (5) 4-di-p-tolylaminostilbene, 4- (di- A stilbene compound such as p-tolylamino) -4 ′-(4- (di-p-tolylamino) styryl) stilbene, and the like can be used.

  Furthermore, triazole and its derivatives, oxadiazole and its derivatives, imidazole and its derivatives, polyarylalkane and its derivatives, pyrazoline and its derivatives, pyrazolone and its derivatives, phenylenediamine and its derivatives, arylamine and its derivatives, amino Substituted chalcone and derivatives thereof, oxazole and derivatives thereof, styryl anthracene and derivatives thereof, fluorenone and derivatives thereof, hydrazone and derivatives thereof, silazane and derivatives thereof, polysilane aniline copolymers, styrylamine compounds, aromatic dimethylidin compounds Poly-3-methylthiophene can also be used. Note that the electron-donating organic material can be chemically modified to adjust the absorption wavelength characteristic.

On the other hand, as the above-described electron-accepting organic material constituting the organic photoelectric conversion layer 13, in addition to the low-molecular and high-molecular materials similar to the electron-donating organic material described above, the following (i) to (vi): Compounds (i) oxadiazoles and derivatives thereof such as (i) 1,3-bis (4-tert-butylphenyl-1,3,4-oxadiazolyl) phenylene, (ii) fluorene and derivatives thereof, (iii) anthraquino Dimethane and its derivatives, (iv) diphenylquinone and its derivatives, (v) fullerene and its derivatives ([5,6] -phenyl C61 butyric acid methyl ester, [6,6] -phenyl C61 butyric acid methyl ester, etc.), ( vi) polymers having carbon nanotubes and derivatives thereof as repeating units, compounds (i) to (vi) above and others A copolymer with the above monomer is used. Furthermore, a group of polymer materials collectively referred to as dendrimers can be used. The electron-accepting organic material can be chemically modified to adjust the absorption wavelength characteristic.
<Mounting process>
In the mounting process, a plurality of organic photoelectric conversion elements formed on the transparent substrate constituting the photoelectric conversion substrate described above are divided into a plurality of groups along the longitudinal direction of the transparent substrate, and each of the plurality of groups has 1 Read circuit portions are arranged one by one. Each readout circuit unit reads out signal charges from each of the organic photoelectric conversion elements constituting the corresponding group through readout wirings and pads, and is mounted on a transparent substrate.

  As each of the read circuit units 5a to 5d (see FIG. 1), for example, a semiconductor bare chip in which a predetermined integrated circuit is formed on a single crystal silicon substrate is used. Of course, it is also possible to use a packaged semiconductor chip as a reading circuit portion.

  As shown in FIG. 13, in mounting each readout circuit unit 5a to 5d (only one readout circuit unit 5c appears in FIG. 12) on the transparent substrate 1 constituting the photoelectric conversion substrate 30A. The anisotropic conductive film 21 is preferably used. By using the anisotropic conductive film 21, the readout circuit portions 5 a to 5 d can be mounted under a small mounting area, so that the photoelectric conversion device 30 (see FIG. 1) can be easily downsized. Of course, when the mounting area can be increased, the photoelectric conversion device can be configured such that each readout circuit portion is mounted on the transparent substrate by wire bonding, for example, without using an anisotropic conductive film. By performing this mounting process, the photoelectric conversion device 30 described in the first embodiment is obtained.

  As mentioned above, although two Embodiments were mentioned and the photoelectric conversion device of this invention and its manufacturing method were demonstrated, this invention is not limited to the above-mentioned form. The configuration other than the arrangement of the readout circuit portion in the photoelectric conversion device of the present invention can be appropriately selected according to the use of the photoelectric conversion device, the performance required for the photoelectric conversion device, and the like.

  For example, the transparent substrate 1 (see FIG. 2) is preferably an electrically insulating substrate that has desired mechanical and thermal strength and transmits light, but in a range that does not hinder the operation of the photoelectric conversion device 30, Or depending on the use of the photoelectric conversion device 30, you may have a certain amount of electroconductivity.

  Further, whether or not to provide the optical filter unit 10 (see FIG. 2) can be arbitrarily selected. When the optical filter unit 10 is provided, the optical filter unit 10 is arranged in the optical path of incident light to each of the plurality of organic photoelectric conversion elements and transmits light in a predetermined wavelength region in the incident light. In addition to the three primary color filters 10R, 10G, and 10B, three complementary color filters (cyan filter, magenta filter, and yellow filter) or a single color optical filter may be used. The optical filter unit 10 can also be configured by a holographic element having an optical function similar to those of these optical filters.

  The arrangement structure of the organic photoelectric conversion elements in the photoelectric conversion unit 2 (see, for example, FIG. 1) includes one organic photoelectric conversion element, two organic photoelectric conversion elements, Alternatively, four or more organic photoelectric conversion elements may be used as a repeating unit. The size of each organic photoelectric conversion element in plan view can be selected as appropriate according to the application and performance of the photoelectric conversion device 30.

  Each organic photoelectric conversion element can also be provided with a photocurable resin layer so as to cover inner edges of the anodes 12r, 12g, and 12b in plan view. This photocurable resin layer is formed, for example, by patterning a desired photocurable resin composition layer into a predetermined shape by a lithography method. Since the etching process is not used, it is easy to improve the shape accuracy. Then, by providing the photocurable resin layer in this way, the effective area of each organic photoelectric conversion element can be reduced without increasing the positional accuracy and shape accuracy of each anode 12r, 12g, 12b. As a result, when a linear image sensor is configured using the photoelectric conversion device of the present invention, it becomes easy to obtain high-quality image data. The above-mentioned light effect resin layer can be formed together with the readout wiring from the material of the electrical insulating layer covering the readout wiring, or can be formed separately from the electrical insulating layer covering the readout wiring.

  Between the anode 12r, 12g or 12b and the organic photoelectric conversion layer 13 on the organic photoelectric conversion element in each organic photoelectric conversion element, if necessary, the work function is higher than that of the anode 12r, 12g, 12b and the above-described electrons are used. A positive electrode buffer layer made of a material having a work function lower than that of the donating material can be interposed. Similarly, the gap between the organic photoelectric conversion layer 13 and the cathode 3 on the organic photoelectric conversion layer 13 is higher than the above-described electron-accepting materials such as metal fluorides and metal oxides including lithium fluoride as necessary. A negative electrode buffer layer made of a material having a work function and a work function lower than that of the cathode 3 can be interposed.

  The electrical insulating layer 19 covering the readout wiring 4 is provided in a state of being in contact with the pads 17r, 17g, and 17b on the side surfaces of the pads 17r, 17g, and 17b, and is separated from the pads 17r, 17g, and 17b to some extent. For example, they can be provided separated by a distance less than the particle diameter of the conductive particles in the anisotropic conductive film. When the electrical insulating layer 19 is formed in this way, even if a slight manufacturing error occurs at the position of the electrical insulating layer 19, the bumps Bu and the pads 17r of the read circuit portions 5a to 5d are mounted when the read circuit portions 5a to 5d are mounted. , 17g or 17b can be reliably conducted.

  Each of the readout wiring 4 (see FIG. 1 or FIG. 2), the first wiring 7, and the second wiring 8 is made of the same material as the anodes 12r, 12g, and 12b described above, and other conductive materials such as It can also be formed of gold, chromium, copper or the like. It can also be formed of a mixture of a plurality of types of conductive materials or a laminate in which each layer is made of different conductive materials.

  The readout circuit portions 5a to 5d can be mounted on the transparent substrate 1 using an anisotropic conductive adhesive without using an anisotropic conductive film. Further, as already described, it can also be performed by wire bonding. The number of readout circuit units mounted on the transparent substrate 1, and the number of groups of organic photoelectric conversion elements in the photoelectric conversion unit 2, is a linear image sensor configured using the total number of organic photoelectric conversion elements and the photoelectric transformation device of the present invention. It is possible to select appropriately according to the reading speed at. From the viewpoint of increasing the reading speed as much as possible, it is preferable to mount three or more reading circuit units on the transparent substrate 1. In addition, various variations, modifications, combinations, and the like are possible for the photoelectric conversion device and the manufacturing method thereof of the present invention. Hereinafter, specific examples of the present invention will be further described with reference to examples.

(Example 1)
First, a long plate-like soda glass substrate was prepared as a transparent substrate. An ITO film having a thickness of 150 nm is formed on the soda glass substrate by sputtering, and then a resist material (OFPR-800 (trade name) manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied on the ITO film by spin coating. A resist film having a thickness of 1 μm was formed, and after pre-baking the resist film, the resist film was selectively exposed, developed, and post-baked to obtain a resist pattern having a predetermined shape. Then, the transparent substrate (soda glass substrate) formed up to the resist pattern was immersed in a 50% hydrochloric acid aqueous solution at a liquid temperature of 60 ° C., and the ITO film in the portion where the resist pattern was not formed was etched.

  Thereafter, the resist pattern is removed, and a large number of anodes (anodes for organic photoelectric conversion elements) arranged in a matrix over 3 rows and 7500 columns, and readout wiring connected to each anode one by one And a plurality of second wirings for connecting the readout circuit portions to each other. The pitch between the adjacent anodes in the row direction (longitudinal direction of the transparent substrate) is 0.042 mm, the distance is 0.005 mm, and the adjacent anodes in the column direction (the direction orthogonal to the longitudinal direction of the transparent substrate in plan view) The pitch and distance are also 0.042 mm and 0.005 mm, respectively.

  Next, a 1 μm-thick copper (Cu) film is formed on the transparent substrate on which the anode and readout wiring are formed by physical vapor deposition, and a resist material (manufactured by Tokyo Ohka Co., Ltd.) is formed thereon by spin coating. OFPR-800 (trade name) is applied to form a resist film having a thickness of 2 μm, and after pre-baking the resist film, the resist film is selectively exposed, developed, and post-baked to form a predetermined shape. A resist pattern was obtained. Then, the transparent substrate (soda glass substrate) formed up to the resist pattern was immersed in a 50% phosphoric acid solution having a liquid temperature of room temperature, and the copper film in the portion where the resist pattern was not formed was etched. Thereafter, the resist pattern is removed, and the plurality of pads located on the end portions (end portions on the side not connected to the anode) of each read wiring are connected to the read circuit portion and the circuit board. A plurality of first wirings were obtained.

  Next, a polyimide-based photosensitive resin composition (Photo Nice (trade name) manufactured by Toray Industries, Inc.) is spin-coated on the transparent substrate formed up to the pad and the first wiring, and a resin composition layer having a film thickness of about 1 μm. After the resin composition layer is pre-baked, the layer is subjected to selective exposure, development, and post-baking to cover each readout wiring, each first wiring, and each second wiring. A layer was obtained. The electrical insulating layer is for electrically separating adjacent readout wirings, and electrically isolates each readout wiring from organic photoelectric conversion elements other than the organic photoelectric conversion element corresponding to the readout wiring. It is also for this purpose, and is formed in a state of being in contact with the pad on the side surface of each pad.

  Next, a mixture of poly (3,4-ethylenedioxythiophene) and polystyrene sulfonate was dropped on a transparent substrate through a filter having an aperture of 0.45 μm, and uniformly applied by a spin coat method. By heating this in a clean oven at 200 ° C. for 30 minutes, a positive electrode buffer layer covering each of the anodes was formed.

Next, a chlorobenzene solution containing poly (2-methoxy-5- (2′-ethylhexyloxy) -1,4-phenylenevinylene) and [5,6] -phenyl C61 butyric acid methyl ester in a weight ratio of 1: 4 Was applied on the above positive electrode side buffer layer by a spin coat method, and was heat-treated in a clean oven at 100 ° C. for 30 minutes to form an organic photoelectric conversion layer having a thickness of about 100 nm on each anode.

Subsequently, in a resistance heating vapor deposition apparatus depressurized to a degree of vacuum of 0.27 mPa (2 × 10 ⁻⁶ Torr) or less, a lithium fluoride film with a thickness of 2 nm as a negative electrode buffer layer and a film thickness as a cathode A 100 nm aluminum film was sequentially formed on each organic photoelectric conversion layer in this order. By forming up to this cathode, many organic photoelectric conversion elements including an anode (ITO film), a positive electrode buffer layer, an organic photoelectric conversion layer, a negative electrode buffer layer, and a cathode were formed.

  After this, an extremely shallow box-shaped object made of glass is prepared as a sealing part, and the box-shaped object is fixed on a transparent substrate with an epoxy-based photocurable adhesive so as to cover each organic photoelectric conversion element. Thus, four read circuit parts were flip-chip bonded on the transparent substrate via an anisotropic conductive film. Each readout circuit unit is composed of a semiconductor bare chip on which a predetermined integrated circuit is formed.

  Thus, the target photoelectric conversion device was obtained by carrying out to the mounting of four readout circuit parts. This photoelectric conversion device has a structure obtained by removing the optical filter unit 10 and the protective layer 11 from the photoelectric conversion device 30 shown in FIG.

(Example 2)
An alkali-free glass substrate is used as a transparent substrate, and an optical filter portion and a protective layer covering the optical filter portion are provided on the transparent substrate, and then each anode (an anode for an organic photoelectric conversion element) is formed on the protective layer. An organic photoelectric device having the same structure as that of the photoelectric conversion device 30 shown in FIG. 2 was obtained in the same manner as in Example 1 except for the above.

  At this time, in providing the optical filter portion, first, a color resin of a desired color is applied on a transparent substrate (non-alkali glass substrate) to form a coating film, and the coating film is temporarily fired at 100 ° C. After that, a process of obtaining a color resin layer patterned in a stripe shape by performing exposure through a photomask and developing is performed for each of the red, green, and blue color resins, so that a stripe shape with a film thickness of 2 μm is obtained. A total of three pre-fired color resin layers were formed in parallel. Next, these three pre-fired color resin layers were fired to form an optical filter portion composed of a red color filter, a green color filter, and a blue color filter.

  In forming the protective layer, first, a thermosetting resin composition is applied by spin coating so as to cover the optical filter portion to form a coating film, and then the coating film is dried. A photomask having a predetermined shape was formed on the coating film. Next, the coated film after drying was selectively exposed using this photomask, developed, and baked at 200 ° C., thereby forming a protective layer covering the upper and side surfaces of the optical filter portion. The thickness of the protective layer (thickness on the optical filter portion) is about 2 μm, and the protective layer is tapered on the side of the optical filter portion.

(Example 3)
An organic photoelectric device having the same structure as the photoelectric conversion device 30 shown in FIG. 2 in the same manner as in Example 2 except that an aluminum (Al) film having a thickness of 2 μm is used as a material for each pad and each first wiring. Got. At this time, the aluminum film was formed by physical vapor deposition.

  In the photoelectric conversion device thus obtained, compared to the photoelectric conversion device obtained in Example 2, the height of the upper surface of the pad when the upper surface of the transparent substrate is used as a reference and the upper surface of the electrical insulating film covering the readout wiring The difference with the height of is large. For this reason, when the readout circuit unit is mounted on the transparent substrate via the anisotropic conductive film, the readout circuit unit can be sufficiently pushed down to the transparent substrate side without being obstructed by the electrical insulating film, It is easy to reliably connect the bumps of the circuit portion and the bumps on the transparent substrate.

Example 4
When the protective layer covering the optical filter portion is provided on the transparent substrate, the baking temperature of the thermosetting resin composition is 250 ° C., and the thickness of the protective layer is about 1.8 μm. When obtaining an electrical insulating layer covering each of the 1 wiring and each of the second wirings, the inner edge portion in plan view of each anode (anode for organic photoelectric conversion element) is formed from the resin composition layer that is the source of the electrical insulating layer. The electrical insulating layer is formed so that the electrical insulating layer covering each of the readout wiring, the first wiring, and the second wiring is in contact with the pad on the side surface of the pad. An organic photoelectric device having the same structure as that of the photoelectric conversion device 30 shown in FIG. 2 was obtained in the same manner as in Example 3 except for the points formed.

  In the photoelectric conversion device thus obtained, the above-mentioned electrical insulating layer is formed on the anode in each organic photoelectric conversion element by lithography, and the shape accuracy is high. For this reason, it is easy to keep the effective area of each organic photoelectric conversion element within the design tolerance. In addition, unstable current from the anode end (edge portion) can be reduced. In addition, since the electrical insulating layer covering each wiring is in contact with the pad at the side surface of the pad, the conductive particles in the anisotropic conductive film are not fitted between the electrical insulating layer and the pad, which is not necessary. It is difficult for conduction at a desired location.

(Example 5)
An electrical insulating layer covering each readout wiring, each first wiring, and each second wiring is about 1 μm from the side surface of the pad (corresponding to a distance less than the particle size of the conductive particles in the anisotropic conductive film). An organic photoelectric device having the same structure as the photoelectric conversion device 30 shown in FIG. 2 was obtained in the same manner as in Example 4 except that the electrical insulating layer was formed so as to be separated.

  In the photoelectric conversion device obtained in this way, since the electrical insulating layer is separated from the side surface of the pad as described above, even if a slight manufacturing error occurs in the position of the electrical insulating layer, the bump of the readout circuit section And the pad on the transparent substrate can be reliably conducted.

(Example 6)
Implemented except that an electrically insulating black resist (CFPR BK 8311RE (trade name) manufactured by Tokyo Ohka Co., Ltd.) was used as a raw material for the electrical insulating layer covering each readout wiring, each first wiring, and each second wiring. In the same manner as in Example 4, an organic photoelectric device having the same structure as the photoelectric conversion device 30 shown in FIG. 2 was obtained.

  In the photoelectric conversion device thus obtained, since the electrical insulating layer has a light-shielding property, photoelectric conversion at a location other than the location directly in contact with the anode in the organic photoelectric conversion layer is possible. It can be suppressed. That is, photoelectric conversion at a place other than the place designed as the organic photoelectric conversion element is prevented.

  The photoelectric conversion device of the present invention can be used as a photoelectric conversion device in a linear image sensor.

The top view which shows roughly an example of the photoelectric conversion device of this invention Schematic diagram of the IV-IV plane shown in FIG. Schematic which shows planar arrangement | positioning of each anode for organic photoelectric conversion elements in the area | region A shown in FIG. Schematic showing the planar arrangement of each pad in region B shown in FIG. Sectional drawing which shows schematically the positional relationship of the anode for organic photoelectric conversion elements and an electrical insulating layer in the photoelectric conversion part shown in FIG. The other sectional view which shows schematically the positional relationship of the anode for organic photoelectric conversion elements and the electrical insulating layer in the photoelectric conversion part shown in FIG. Sectional drawing which shows roughly the positional relationship of each reading wiring in the photoelectric conversion device shown in FIG. 1, the pad to which this reading wiring is connected, and each upper surface of an electrically insulating layer Sectional drawing which shows schematically the optical filter part and protective layer which are formed in the single side | surface of a transparent substrate at the photoelectric conversion board | substrate production process in the manufacturing method of the photoelectric conversion device of this invention. Sectional drawing which shows schematically the anode for organic conversion elements formed in the photoelectric conversion board | substrate production process in the manufacturing method of the photoelectric conversion device of this invention, read-out wiring, and 2nd wiring Sectional drawing which shows roughly each pad formed at the photoelectric conversion board | substrate preparation process in the manufacturing method of the photoelectric conversion device of this invention. Sectional drawing which shows roughly the insulating layer used as the origin of the electrical edge layer formed at the photoelectric conversion board | substrate production process in the manufacturing method of the photoelectric conversion device of this invention Sectional drawing which shows schematically the organic photoelectric converting layer, cathode, and sealing part which are provided at the photoelectric conversion board | substrate production process in the manufacturing method of the photoelectric conversion device of this invention. Sectional drawing which shows schematically the read-out circuit part mounted in the photoelectric conversion board | substrate at the mounting process in the manufacturing method of the photoelectric conversion device of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Transparent substrate 2 Photoelectric conversion part 3 Cathode for organic photoelectric conversion elements (cathode)
4 readout wiring 5a to 5d readout circuit section 6 circuit board 7 first wiring 8 second wiring 10 optical filter section 10R red filter 10G green filter 10B blue filter 11 protective layer 12r, 12g, 12b anode for photoelectric conversion element (anode)
13 Organic photoelectric conversion layer 15 Sealing portion 17r, 17g, 17b, 23, 25 Pad 21 Anisotropic conductive film 30 Photoelectric conversion device 30A Photoelectric conversion substrate

Claims (17)

A long plate-like substrate;
A plurality of organic photoelectric conversion elements arranged on the substrate along the longitudinal direction of the substrate;
A signal charge reading means arranged on the substrate, for dividing the plurality of organic photoelectric conversion elements into a plurality of groups along the longitudinal direction and reading signal charges from each of the organic photoelectric conversion elements for each group;
A photoelectric conversion device comprising: The signal charge readout means includes
A pad disposed on the substrate corresponding to each of the plurality of organic photoelectric conversion elements;
Read wiring arranged on the substrate corresponding to each of the plurality of organic photoelectric conversion elements, and connecting the organic photoelectric conversion elements and pads corresponding to the organic photoelectric conversion elements;
A readout circuit arranged on the substrate corresponding to each of the plurality of groups, and reading out signal charges from each of the organic photoelectric conversion elements constituting the corresponding group via the readout wiring and the pad And
A photoelectric conversion device comprising: The photoelectric conversion device according to claim 2, further comprising an anisotropic conductive film interposed between each of the plurality of pads and a readout circuit unit corresponding to the pads. The plurality of organic photoelectric conversion elements have a predetermined number of organic photoelectric conversion elements arranged in a direction orthogonal to the longitudinal direction in plan view, and an arrangement in which a plurality of the repeating units are arranged along the longitudinal direction. The photoelectric conversion device according to claim 1, wherein the photoelectric conversion device has a structure. The photoelectric conversion device according to claim 4, wherein the repeating unit includes three organic photoelectric conversion elements. 6. The photoelectric conversion according to claim 4, wherein each of the pads corresponding to the organic photoelectric conversion elements constituting the repeating unit is arranged in a direction orthogonal to the longitudinal direction in plan view. device. The photoelectric conversion device according to claim 2, further comprising an electrical insulating layer that covers each of the readout wirings and electrically isolates adjacent readout wirings. The photoelectric insulating layer according to claim 7, wherein the electrical insulating layer electrically separates each of the readout wirings from an organic photoelectric conversion element other than the organic photoelectric conversion element to which the readout wiring corresponds. Conversion device. The photoelectric conversion device according to claim 7, wherein the electrical insulating layer is in contact with the pad on a side surface of the pad. The height of the upper surface of each of the plurality of pads is higher than the height of the upper surface of the electrical insulating layer around the pads when the upper surface of the substrate is used as a reference. The photoelectric conversion device according to any one of the above. The photoelectric conversion device according to claim 7, wherein the electrical insulating layer is made of a photocurable resin. The photoelectric conversion device according to claim 7, wherein the electrical insulating layer has a light shielding property. The photoelectric conversion device according to claim 7, wherein the electrical insulating layer is a silicon nitride film. Each of the plurality of organic photoelectric conversion elements includes an anode, a photocurable resin layer covering an inner edge of the anode in plan view, an organic photoelectric conversion layer formed on the anode, and the organic photoelectric conversion layer The photoelectric conversion device according to claim 1, further comprising a cathode covering the substrate. The optical filter part further arrange | positioned in the optical path of the incident light to each of these organic photoelectric conversion elements, and permeate | transmits the light of the predetermined wavelength range in the said incident light is further provided. The photoelectric conversion device according to any one of the above. The optical filter unit includes a red filter that transmits light in a red wavelength region in the incident light, a green filter that transmits light in a green wavelength region, and a blue filter that transmits light in a blue wavelength region. The photoelectric conversion device according to claim 15. A plurality of organic photoelectric conversion elements are arranged in alignment along the longitudinal direction of the long plate-like substrate, and pads are arranged corresponding to each of the plurality of organic photoelectric conversion elements, Furthermore, a photoelectric conversion substrate manufacturing step for obtaining a photoelectric conversion substrate in which a readout wiring for connecting each of the plurality of organic photoelectric conversion elements to a pad corresponding to the organic photoelectric conversion element is disposed;
Dividing the plurality of organic photoelectric conversion elements into a plurality of groups along the longitudinal direction, one for each of the plurality of groups, the readout wiring from each of the organic photoelectric conversion elements constituting the corresponding group, and A mounting step of mounting a readout circuit unit for reading signal charges through the pad on the substrate;
A process for producing a photoelectric conversion device comprising:

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