JP2008177617A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

A semiconductor device capable of reducing the width of a sealing resin region used for protecting a semiconductor element and reducing the outer shape of the semiconductor device and a method for manufacturing the same are provided.
In a semiconductor device 10 such as a COF, a semiconductor chip 4 is mounted on a film-like flexible wiring substrate 1 on which wiring patterns 2 and 3 are formed. A gap between the flexible wiring substrate 1 and the semiconductor chip 4 is filled with a sealing resin for protecting the semiconductor chip 4. The resin width of the drawing application trace 6c formed when drawing the long side of the semiconductor chip 4 with a nozzle and filling the sealing resin is 0.1 to 1.0 mm, and the resin thickness of the drawing application trace 6c is 10 μm. It is as follows.
[Selection] Figure 1

Description

  The present invention relates to a semiconductor device called COF (Chip On Film) in which a semiconductor element is mounted and bonded on a flexible wiring board.

  In recent years, the fine pitch of a wiring pattern is rapidly progressing in a flexible wiring board on which a liquid crystal driver is mounted as the number of outputs of the liquid crystal driver is increased. In addition, along with the reduction in the thickness and size of semiconductor devices, the reduction including the protective resin portion of the semiconductor element is progressing.

  Currently, COF (Chip On Film), which allows finer pitch wiring patterns and can bend flexibly than TCP (Tape Carrier Package), is the mainstream for mounting liquid crystal driver ICs. .

  The COF mounting method is as follows.

  First, as shown in FIGS. 8A and 8B, wiring patterns 102 and 103 made of copper are formed on a flexible film 101a made of polyimide, and a semiconductor chip in which protruding electrodes 105 are formed as shown in FIG. 104 is joined.

  Next, as a protection for the semiconductor chip 104, a sealing resin for the underfill 106 is filled between the semiconductor chip 104 and the flexible wiring board 101, and the sealing resin is cured by heat treatment.

  When filling the sealing resin of the underfill 106, as shown in FIGS. 10A and 10B, a predetermined amount of the sealing resin was discharged from the nozzle 141 and determined according to the shape of the semiconductor chip 104. A drawing pattern is injected from the four side surfaces of the semiconductor chip 104 between the semiconductor chip 104 and the flexible wiring board. The sealing resin flows between the semiconductor chip 104 and the flexible wiring substrate 101 without a gap due to a capillary phenomenon, thereby forming uniform fillet portions 106 a and 106 b on the side surfaces of the semiconductor chip 104. Thereafter, as shown in FIG. 8A, the individual outer shape 109 of the flexible film 101a is cut to complete individual COF semiconductor devices 110 as shown in FIG. 8B.

The drawing pattern used when discharging the sealing resin for the underfill 106 depends on the fluidity of the resin used. For this reason, in order to fill the gap between the semiconductor chip 104 and the flexible wiring board 101 without any unevenness and form uniform fillet portions 106a and 106b on the side surfaces of the semiconductor chip 104, the resin is applied from the four side surfaces of the semiconductor chip 104. There was no choice but to fill. In addition, there is a problem in that the resin thickness of the drawing application trace 106c remaining when the sealing resin is drawn and applied is as thick as 30 to 50 μm or more and the resin remains clear.
JP 2003-174045 A (released on June 20, 2003)

  By the way, in order to meet the demand for lighter, thinner and smaller semiconductor devices, it is indispensable not only to reduce the size of the semiconductor chip but also to reduce the size including the resin region of the semiconductor chip.

  That is, the COF semiconductor device has a feature that the bending position can be taken flexibly. In this respect, since the resin region becomes a region that cannot be bent, the resin region should be as small as possible. That is, if the resin sealing portion is forcibly bent, the sealing resin is cracked or peeled off at the adhesive surface between the sealing resin and the flexible substrate.

  However, in the conventional semiconductor device and the manufacturing method thereof, the area of the fillet portions 106a and 106b and the drawing coating trace 106c based on the formation of the underfill 106 is large, and the presence of this large resin area does not affect the bending area at all. Therefore, there is a problem in that it is a limitation in reducing the size by bending the product. Specifically, as shown in FIG. 10B, the fillet portions 106 a and 106 b around the semiconductor chip 104 exist with the same width from the semiconductor chip 104. Further, as shown in FIG. 9, since the resin thickness of the drawing application mark 106c is as thick as 30 to 50 μm, the drawing application mark 106c is also a portion that cannot be bent.

  On the other hand, in the flexible wiring board 101 in which the wiring patterns 102 and 103 are becoming finer, the electrical insulation resistance between the adjacent wiring patterns 102 and 102 and between the wiring patterns 103 and 103 is the item that most affects the reliability. ing. Therefore, as shown in FIG. 11, as the protection of the semiconductor chip 104, entrained bubbles 151 and 152 generated when the sealing resin of the underfill 106 is filled between the semiconductor chip 104 and the flexible wiring board 101 include the resin. If it remains on the semiconductor chip 104, between the protruding electrodes 105, between the wiring patterns 102 and 102, and between the wiring patterns 103 and 103 without completely passing outside the sealing resin before flowing and curing, the protruding electrodes 105 and A gap is generated between the wiring patterns 102 and 102 and between the wiring patterns 103 and 103. When moisture from the outside or residual ion components in the resin enter and accumulate in the voids, there is a problem that migration easily occurs in this portion and the electrical insulation resistance between terminals is reduced.

  Further, in the conventional sealing resin, since the viscosity is high, the fluidity is poor, and if the four side surfaces of the semiconductor chip 104 are not drawn and applied, only one fillet portion 106a exists as shown in FIG. The fillet becomes non-uniform such that 106b is not present. As a result, there is a problem that unfilling of the exposure of the wiring patterns 102 and 103 occurs and a quality defect occurs.

  In Patent Document 1, in order to prevent the occurrence of voids in the underfill described above, a sealing resin having a viscosity of about 1000 cp (1000 mPa · s) is heated to 50 ° C. at 25 ° C., and the viscosity is about 250 cp (250 mPa.s). After the filling step of lowering to s) and leaving it to stand for 120 seconds, a defoaming step of applying a tool heated to 140 to 200 ° C. to the surface of the flexible wiring board 1 and heating for 5 seconds is provided. However, the filling of the sealing resin itself is performed by drawing the four corners or the outer periphery of the semiconductor chip. In addition, since the viscosity of the sealing resin at 25 ° C. is as high as 1000 mPa · s, the fluidity is poor, and the sealing resin is heated to 50 ° C. to reduce the viscosity. If the length is longer, the curing reaction proceeds, the resin viscosity increases, the fluidity is lowered, and the pot life of the resin is shortened.

  The present invention has been made in view of the above-described conventional problems, and an object of the present invention is to reduce the width of a sealing resin region used for protecting a semiconductor element and to reduce the outer shape of the semiconductor device and the semiconductor device It is to provide a manufacturing method.

  In order to solve the above problems, a semiconductor device of the present invention is a semiconductor device such as a COF in which a semiconductor element is mounted on a film-like flexible wiring substrate on which a wiring pattern is formed. The width of the coating application trace that is formed when the sealing resin for protecting the semiconductor element is filled in the gap and the sealing resin is filled by drawing at least the long side of the semiconductor element with a nozzle. It is 0.1 to 1.0 mm, and the resin thickness of the drawing application trace is 10 μm or less.

  Further, in order to solve the above problems, a method for manufacturing a semiconductor device of the present invention is a method for manufacturing a semiconductor device such as a COF in which a semiconductor element is mounted on a film-like flexible wiring substrate on which a wiring pattern is formed. The gap between the flexible wiring board and the semiconductor element can be filled with a sealing resin for protecting the semiconductor element, and at least the long side of the semiconductor element can be drawn with a nozzle to fill the sealing resin. The resin width of the drawing application trace is 0.1 to 1.0 mm, and the resin thickness of the drawing application trace is 10 μm or less. The drawing application trace refers to a resin that remains in a place where the applied sealing resin has flowed through the gap between the flexible wiring board and the semiconductor element and has been applied after curing.

  Conventionally, since the viscosity of the sealing resin was high, the resin thickness of the drawing application trace formed when filling the sealing resin was 30 to 50 μm or more, and this drawing application trace was not an object of bending.

  On the other hand, in the present invention, the resin width of the drawing application trace formed when drawing the long side of the semiconductor element with a nozzle and filling the sealing resin is 0.1 to 1.0 mm, and the drawing The resin thickness of the application mark is 10 μm or less.

  In this way, by suppressing the resin thickness of the resin drawing coating trace to 10 μm or less, it becomes possible to prevent resin cracking and resin peeling due to bending stress at this portion. As a result, this drawing application mark that could not be bent in the prior art becomes a foldable region, and the resin region that cannot be folded can be reduced. As a result, the apparent outer size of the semiconductor device, that is, the non-flexible region, can be made smaller than the conventional one.

  Therefore, it is possible to provide a semiconductor device and a method for manufacturing the same that can reduce the width of the sealing resin region used for protecting the semiconductor element, expand the bent region, and reduce the outer shape of the semiconductor device.

  According to another aspect of the present invention, there is provided a semiconductor device in which a semiconductor element is mounted on a film-like flexible wiring board on which a wiring pattern is formed. Is filled with a sealing resin for protecting the semiconductor element, and a drawing coating mark and a semiconductor element peripheral filling portion are formed by drawing one long side of the semiconductor element with a nozzle and filling the sealing resin. The drawing application mark has a resin width of 0.1 to 1.0 mm, the drawing application mark has a resin thickness of 10 μm or less, and the semiconductor element peripheral filling portion has a width of the semiconductor element. The nozzle application side on one long side is 1.0 mm or less from the semiconductor element, while the long side opposite to the one long side of the semiconductor element is 0.8 mm or less from the semiconductor element. It is characterized in that.

  According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor device in which a semiconductor element is mounted on a film-like flexible wiring substrate on which a wiring pattern is formed. A sealing resin for protecting the semiconductor element is filled in a gap between the semiconductor element and the semiconductor element is filled with the sealing resin by drawing one long side of the semiconductor element with a nozzle. The width of the semiconductor element peripheral filling portion that can be formed when drawing one long side with a nozzle and filling the sealing resin is 1.0 mm or less from the semiconductor element on the nozzle application side on one long side of the semiconductor element. On the other hand, the length of the semiconductor element on the long side opposite to one long side is set to 0.8 mm or less from the semiconductor element.

  Conventionally, since the viscosity of the sealing resin was high, the sealing resin had to be filled from the four side surfaces of the semiconductor element. As a result, the width of the semiconductor element peripheral filling portion was 1.0 mm or less from the semiconductor element. I couldn't.

  On the other hand, in the present invention, the width of the semiconductor element peripheral filling portion is set to 1.0 mm or less from the semiconductor element on the nozzle application side on one long side of the semiconductor element, while one long side of the semiconductor element is The long side facing the side is 0.8 mm or less from the semiconductor element.

  This is possible because of the unprecedented low viscosity of the sealing resin and improved fluidity. As a result, the resin filling method can be changed from drawing on the four sides of the semiconductor element to drawing on one side of the long side. This is because it was able to be changed. Therefore, in particular, on the long side facing one long side of the semiconductor element, it is 0.8 mm or less from the semiconductor element, and the width of the semiconductor element peripheral filling portion can be greatly reduced.

  As a result, it is possible to reduce the unfoldable resin region that could not be bent in the prior art, and to reduce the apparent outer size of the semiconductor device, that is, the inflexible region, compared to the conventional case.

  In the semiconductor device and the manufacturing method thereof according to the invention, the sealing resin preferably has a viscosity at the time of filling of 50 to 600 mPa · s at 25 ° C.

  Thereby, about the sealing resin used in order to fill the clearance gap between a flexible wiring board and a semiconductor element, fluidity | liquidity can be raised by the unprecedented viscosity reduction. For this reason, the resin filling method can be changed from the drawing application on the four side surfaces of the semiconductor element to the one-side drawing application on the long side.

  As a result, the width of the semiconductor element peripheral filling portion formed on the side surface of the semiconductor element can be made uniform, and the width of the semiconductor element peripheral filling portion on the other side surface side can be reduced.

  Therefore, it is possible to provide a semiconductor device that can reduce the width of the sealing resin region used for protecting the semiconductor element, and can enlarge and reduce the bent region, and a method for manufacturing the same.

  Furthermore, entrained bubbles generated when the sealing resin is filled in the gap between the semiconductor element and the flexible wiring board are likely to escape to the outside of the sealing resin until the resin flows and hardens, so that the bubbles remain. Can be prevented. Therefore, bubbles generated on the sealing resin can be eliminated and the quality of the semiconductor device can be improved.

  In the semiconductor device and the manufacturing method thereof according to the above invention, the sealing resin preferably has a filling temperature of 60 to 120 ° C. Moreover, it is preferable to heat the semiconductor element when raising the temperature of the sealing resin. This is because, in the heating method on the sealing resin side, the hardening of the sealing resin progresses and the viscosity of the resin increases, so that the workability deteriorates due to a problem that the pot life is reduced and the resin coating nozzle is clogged. Because.

  As a result, the fluidity of the sealing resin can be increased by reducing the viscosity of the resin as much as possible. Furthermore, when the sealing resin is heated when the temperature of the sealing resin is increased, liquid dripping from the nozzle may occur, and the resin is exposed to a low temperature immediately after filling the sealing resin. The temperature may decrease and the viscosity may increase. Therefore, it is preferable to heat the semiconductor element when raising the temperature of the sealing resin.

  In the semiconductor device and the manufacturing method thereof according to the invention, it is preferable that 0.10 to 0.30% by weight of a coloring agent is added to the sealing resin for protecting the semiconductor element.

  Thereby, the identification by the visual inspection of the resin semiconductor element periphery filling part and the drawing application | coating trace can be made easy, and resin area management becomes easy.

  Moreover, in the semiconductor device of the said invention, it is preferable that the said drawing application | coating trace exists only in one long side of the said semiconductor element.

  In the method for manufacturing a semiconductor device of the above invention, it is preferable that the sealing resin is drawn and filled with a nozzle only from one long side of the semiconductor element.

  Thereby, it becomes possible to shorten the tact time required for resin drawing application, and it is possible to improve the processing capability of the resin coating apparatus.

  In the semiconductor device and the manufacturing method thereof according to the invention, it is preferable that a plurality of the flexible wiring boards are continuously formed on the film carrier tape, and the semiconductor elements are mounted on the flexible wiring boards, respectively. .

  Thereby, a tape carrier type semiconductor device can be provided.

  In the semiconductor device and the manufacturing method thereof according to the invention, it is preferable that a liquid crystal module on which a liquid crystal display element and peripheral components are mounted is connected to the flexible wiring board.

  Accordingly, the present invention can be applied to a semiconductor device of a liquid crystal module on which a liquid crystal display element and peripheral components are mounted.

  As described above, the semiconductor device of the present invention and the manufacturing method thereof are filled with the sealing resin for protecting the semiconductor element in the gap between the flexible wiring board and the semiconductor element, and at least the long side of the semiconductor element. The resin width of the drawing application trace formed when drawing the side with a nozzle and filling the sealing resin is 0.1 to 1.0 mm, and the resin thickness of the drawing application trace is 10 μm or less.

  Therefore, by suppressing the resin thickness of the resin drawing coating trace to 10 μm or less, it becomes possible to prevent resin cracking and resin peeling due to bending stress in this portion. As a result, this drawing application mark that could not be bent in the prior art becomes a foldable region, and the resin region that cannot be folded can be reduced. As a result, the apparent outer size of the semiconductor device, that is, the non-flexible region, can be made smaller than the conventional one.

  Therefore, it is possible to provide a semiconductor device capable of reducing the width of the sealing resin region used for protecting the semiconductor element, enlarging the bent region and downsizing the outer shape of the semiconductor device, and a manufacturing method thereof.

  In addition, as described above, the semiconductor device of the present invention and the manufacturing method thereof are filled with the sealing resin for protecting the semiconductor element in the gap between the flexible wiring board and the semiconductor element, and The resin width of the drawing application trace of the drawing application trace and the semiconductor element peripheral filling portion formed when drawing the two long sides with a nozzle and filling the sealing resin is 0.1 to 1.0 mm, and the drawing The resin thickness of the coating trace is 10 μm or less, and the width of the semiconductor element peripheral filling portion is 1.0 mm or less from the semiconductor element on the nozzle application side on one long side of the semiconductor element. On the long side opposite to the one long side, the distance from the semiconductor element is 0.8 mm or less.

  This is possible because of the unprecedented low viscosity of the sealing resin and improved fluidity. As a result, the resin filling method can be changed from drawing on the four sides of the semiconductor element to drawing on one side of the long side. This is because it was able to be changed. Therefore, in particular, on the long side facing one long side of the semiconductor element, it is 0.8 mm or less from the semiconductor element, and the width of the semiconductor element peripheral filling portion can be greatly reduced.

Therefore, the resin region that cannot be folded in the prior art is reduced,
The inflexible region of the semiconductor device can be reduced as compared with the conventional case, and the punched outer size of the semiconductor device can be further reduced.

  An embodiment of the present invention will be described with reference to FIGS. 1 to 7 as follows.

  As shown in FIGS. 2A and 2B, the semiconductor device 10 according to the present embodiment is made of COF (chip on film). That is, the COF has a flexible film base structure. After forming the wiring patterns 2 and 3 on the flexible film 1a to form the flexible wiring substrate 1, the semiconductor device 10 on which the semiconductor chip 4 as a semiconductor element is mounted. In this COF, the semiconductor chip 4 is mounted directly on the flexible film 1a.

  The wiring patterns 2 and 3 are made of, for example, copper (Cu) plated with tin (Sn). However, the present invention is not limited to this. For example, copper (Cu) plated with gold (Au) or simply copper (Cu) may be used.

  As shown in FIG. 1A, the semiconductor chip 4 is provided with bump electrodes 5 made of gold (Au). The bump electrode 5 and the wiring patterns 2 and 3 are connected to each other so that they are electrically connected.

  Further, in the semiconductor device 10, a solder resist 7 made of an insulating material is applied to a portion excluding the wiring patterns 2 and 3 and the semiconductor chip 4 on the flexible wiring substrate 1, and thereby conductive foreign matters are It is possible to prevent a short circuit caused by directly adhering to the wiring patterns 2 and 3.

  Furthermore, the semiconductor device 10 includes, for example, a gap formed between the semiconductor chip 4 and the flexible wiring board 1 and the periphery of the semiconductor chip 4 after the bump electrodes 5 and the wiring patterns 2 and 3 on the flexible wiring board 1 are joined. The underfill 6 made of resin is filled. Thereby, the moisture resistance and mechanical strength of the semiconductor device 10 can be improved. When the underfill 6 is filled, if the underfill 6 is filled in a gap formed between the semiconductor chip 4 and the flexible wiring substrate 1, the underfill 6 oozes out to the periphery of the semiconductor chip 4 by capillary action. . The underfill 6 that has oozed out around the semiconductor chip 4 is called fillet portions 6a and 6b. Further, as shown in FIG. 1B, when the underfill 6 is filled, a coating mark remains in a region where resin is injected by a nozzle 41 described later. This application trace is called drawing application trace 6c.

  As shown in FIG. 2A, a plurality of the above-described semiconductor devices 10 are continuously provided in the flexible film 1a. Therefore, as shown in FIG. 6A, by cutting out by the user outer shape 9 in this insulating film, as shown in FIG. 5B, one piece of the semiconductor chip 4 mounted on the flexible wiring board 1 is obtained. The semiconductor device 10 is obtained.

  In addition, as shown to the figure (a), the flexible film 1a is provided with the sprocket hole 8 which is a feed hole part for conveyance on both sides. Therefore, the flexible film 1a can be conveyed by passing a projection (not shown) through the sprocket hole 8. Thereby, the semiconductor device 10 is manufactured by a flow operation.

  In the present embodiment, the completed semiconductor device 10 is mounted on a liquid crystal module 20 as a display module and used to drive a liquid crystal display panel 21, for example, as shown in FIGS. The

  That is, in the liquid crystal module 20, as shown in FIGS. 3A and 3B, the semiconductor device 10 is mounted on a liquid crystal display panel 21 including a TFT (Thin Film Transistor) substrate 21a and a color filter substrate 21b. It has become. A PW (Printed Wiring) substrate 30 as a circuit substrate is attached to the semiconductor device 10 on the side opposite to the liquid crystal display panel 21. When the semiconductor device 10 is attached to the liquid crystal display panel 21 and the PW substrate 30, the semiconductor device 10 applies an anisotropic conductive adhesive (ACF) 11 to the liquid crystal display panel 21 and the PW substrate 30. It is electrically connected by using and adhering. The anisotropic conductive adhesive 11 is obtained by dispersing conductive particles having a diameter of 3 to 15 μm in an adhesive film having a thickness of 15 to 45 μm. Therefore, since the conductive particles are dispersed in the film, the anisotropic conductive adhesive 11 itself is an insulator. However, this anisotropic conductive adhesive 11 is sandwiched between circuit patterns and heated and pressed to establish conduction between the upper and lower electrodes, insulate adjacent electrodes, and perform upper and lower bonding simultaneously. it can.

  Here, with respect to the semiconductor device 10 made of COF having the above-described configuration, a characteristic manufacturing method of the present embodiment and a characteristic configuration manufactured by this manufacturing method will be described in detail.

  First, when the semiconductor device 10 is manufactured, as shown in FIGS. 1A and 2A and 2B, barrier metal layers 2a and 3a and a copper (Cu) film 2b are formed on a flexible film 1a made of polyimide. 3b is formed and this copper (Cu) film is patterned by etching. Further, tin (Sn) plating 2c and 3c are applied thereon to form wiring patterns 2 and 3. Next, except for the semiconductor chip mounting portion, the liquid crystal display panel 21 and the terminal portion connected to the PW substrate 30, the solder resist 7 is printed and applied for protection of the wiring patterns 2 and 3, dried and cured, and the tape carrier film is formed. Make it. Next, the semiconductor chip 4 on which the bump electrode 5 is formed is bonded to the tape carrier film. This bonding process is called inner lead bonding (ILB).

  Next, after the inner lead bonding, as a protection of the semiconductor chip 4, a sealing resin of the underfill 6 is filled between the semiconductor chip 4 and the flexible wiring board 1, and the sealing resin is cured by heat treatment. When filling the sealing resin of the underfill 6, as shown in FIGS. 4A and 4B, a predetermined amount of sealing resin was discharged from the nozzle 41 and determined according to the shape of the semiconductor chip 4. A drawing pattern is injected between the semiconductor chip 4 and the flexible wiring board 1 from the long side of the semiconductor chip 4. The sealing resin flows between the semiconductor chip 4 and the flexible wiring substrate 1 without a gap due to a capillary phenomenon, thereby forming uniform fillet portions 6 a and 6 b on the side surfaces of the semiconductor chip 4. Thereafter, a final test is performed to complete the mounting of the COF semiconductor device 10.

  By the way, the drawing pattern used when discharging the sealing resin of the underfill 6 depends on the fluidity of the resin used. For this reason, in order to fill the gaps between the semiconductor chip 4 and the flexible wiring board 1 without any unevenness and form the uniform fillet portions 6a and 6b on the side surfaces of the semiconductor chip 4, conventionally, the four side surfaces of the semiconductor chip 4 are used. There was no choice but to fill the resin.

  Moreover, the resin thickness of the drawing application trace 6c remaining when the sealing resin is drawn and applied is as thick as 30 to 50 μm or more, and there is a problem that the resin remains clearly.

  Therefore, in the present embodiment, first, the fluidity is improved by setting the viscosity when filling the resin used for the underfill 6 to a low viscosity of 50 to 600 mPa · s.

  That is, as shown in Table 1, when the sealing resin viscosity is 50 to 600 mPa · s at 25 ° C., the filling property of the sealing resin is improved. When the sealing resin viscosity is 800 mPa · s or more, bubbles and unfilled particles are likely to occur. Moreover, in the range of the sealing resin viscosity of 50 to 600 mPa · s, in the range of 50 to 200 mPa · s, liquid dripping from the nozzle 41 tends to occur, and a mechanism for preventing liquid dripping is necessary on the coating apparatus side. It becomes. In this respect, if the resin viscosity is in the range of 300 to 900 mPa · s at 25 ° C., it is easy to handle in terms of workability, and the method of heating the semiconductor chip 4 can further reduce the viscosity and improve the fluidity. From this, in this Embodiment, as comprehensive evaluation, the range whose sealing resin viscosity is 300-600 mPa * s in 25 degreeC is the most preferable.

  Moreover, in this Embodiment, when apply | coating resin with the nozzle 41, the semiconductor chip 4 side is preheated (preheating), and resin is filled in the state heated up to about 60-120 degreeC. Since the gap between the semiconductor chip 4 and the flexible wiring board 1 is narrow and the underfill 6 is small, it is considered that the resin temperature of the underfill 6 quickly rises to the temperature of the semiconductor chip 4 after resin application.

  Here, the reason why the semiconductor chip 4 is preheated is that, as shown in FIGS. 5 and 6, the fluidity of the resin is improved due to the decrease in the viscosity of the resin due to the heating of the resin. In the present embodiment, it is preferable that the preheating temperature of the semiconductor chip 4 is in the range of 60 to 120 ° C. where the fluidity effect is the highest. In addition, it is not preferable to make the resin temperature higher than 120 ° C. from the viewpoint that it is difficult to improve the fluidity of the resin due to the rapid progress of thermosetting or thickening of the sealing resin.

  Here, in the present embodiment, there is another reason for increasing the resin temperature. That is, an epoxy resin generally used as a sealing resin generally has a viscosity of 700 mPa · s or more at room temperature and normal pressure (25 ° C., 1 atm). Therefore, since it is difficult to obtain a product with good filling properties at room temperature and normal pressure (25 ° C., 1 atm), the temperature is increased even at high viscosity at room temperature and normal pressure (25 ° C., 1 atm). Thus, the viscosity can be lowered and the filling property can be easily increased.

  On the other hand, conventionally, as shown in FIG. 10A, as a protection of the semiconductor chip 104, a certain amount of sealing resin is applied to the four side surfaces according to the shape of the semiconductor chip 104 between the semiconductor chip 104 and the flexible wiring substrate 101. There was no choice but to discharge from the nozzle 141. However, in the present embodiment, due to the improvement in fluidity by lowering the viscosity of the resin used, a certain amount of sealing resin is applied only to the long side 1 side of the semiconductor chip 4 as shown in FIG. Change to drawing application.

  Due to this one-side drawing application, entrained bubbles generated when the sealing resin of the underfill 6 is filled in the gap between the semiconductor chip 4 and the flexible wiring board 1 until the resin flows and hardens. Compared with the resin filling on the four side surfaces, bubbles generated inside can be easily removed. That is, since air bubbles are removed from the side where the resin is not applied by the nozzle 41, it is possible to prevent the air bubbles from remaining.

  Further, by changing the sealing resin to the drawing application only on the long side 1 side of the semiconductor chip 4, as shown in FIG. 1B, the drawing application mark 6c width A becomes 0.43 mm, for example. 0.1 to 1.0 mm. Further, the width B of the fillet portion 6a from the semiconductor chip 4 is, for example, 0.92 mm, and can be 1.0 mm or less. Further, the width C of the fillet portion 6b from the semiconductor chip 4 was, for example, 0.55 mm, and could be 0.8 mm or less. Further, the fillet portion on the short side of the semiconductor chip 4 has a width of 0.59 mm, for example, from the semiconductor chip 4. Further, the resin thickness of the drawing application mark 6c was 3 μm.

  As a result, the [lateral resin region (fillet portions 6a and 6b + drawing coating trace 6c) + semiconductor chip width] Wb1 shown in FIG. 4B is equal to the [lateral resin region + semiconductor shown in FIG. Chip width] smaller than Wa1. Further, the [longitudinal resin region] Wb2 shown in FIG. 4B is smaller than the [vertical resin region] Wa2 shown in FIG. 10B.

  Moreover, in this Embodiment, the resin thickness of the drawing application | coating trace 6c is finished thin especially by improving the fluidity | liquidity of sealing resin. That is, as shown in FIGS. 7A and 7B, since the viscosity of the conventional sealing resin is as high as 900 mPa · s or more, the resin thickness of the drawing application mark 106c is as thick as 20 μm or more. However, in the present embodiment, the resin viscosity is suppressed to 50 to 600 mPa · s at 25 ° C., and the semiconductor chip 4 is preheated to 60 ° C. to 120 ° C. at the time of resin filling, and the viscosity is further increased than at 25 ° C. By reducing the thickness, the resin thickness of the drawing application mark 6c is easily thinned to 10 μm or less.

  As a result, as shown in Table 2, the conventional sealing resin has a problem that a resin crack occurs when the drawing application mark 106c is bent. However, in this embodiment, the resin thickness is as thin as 10 μm or less. As a result, the characteristics were changed so that cracks would not occur even when bent. As a result, it has become possible to narrow an area where bending stress cannot be applied conventionally.

  By the way, conventionally, since it could not be bent at the drawing application mark 106c, it was necessary to increase the visibility of the sealing resin region of the drawing application mark 106c. For this reason, conventionally, as a colorant (dye) added in the sealing resin, as shown in the conventional example of Table 3, it is added in the range of 0.3 to 0.5% by weight to darken the color. It was necessary to clarify the drawing application mark 106c. That is, as shown in Table 3, the blending ratio of the colorant in the conventional resin was, for example, 0.5% by weight.

  On the other hand, in the present embodiment, since the thickness of the drawing application trace 6c is small, the drawing application trace 6c can be bent. However, it is necessary to increase visibility in order to clarify the difference between the thick fillet portions 6a and 6b having a resin thickness of 30 μm or more and the thin drawing marks 6c having a resin thickness of 10 μm or less.

  Therefore, in this embodiment, as shown in Table 3, the blending ratio of the colorant in the resin is set to 0.15% by weight, for example, to make the color lighter than in the past.

  As shown in Table 4, the amount of the colorant (dye) added to the sealing resin is 0.1 to 0.3% by weight. This is because it has been confirmed that the visibility of the boundary with the drawing application mark 6c can be improved. In addition, as shown in Table 4, the addition amount of the colorant (dye) is more preferably in the range of 0.15 to 0.20% by weight.

  In the present embodiment, as shown in Table 3, the amount of other additives is 3.1% by weight, compared with 0.2% by weight of the conventional example. This is because, in the present embodiment, as a measure for suppressing the increase in the viscosity of the sealing resin, a curing accelerator that functions as a thermosetting reaction initiator for the sealing resin is used which has a viscosity increase suppressing effect. It is. In addition, as a method of suppressing the increase in viscosity of the curing accelerator, the reaction was suppressed at a low temperature by adjusting the molecular structure of the curing accelerator or a type in which the curing accelerator component was impregnated into the capsule to suppress low temperature reactivity. It is preferable to use a type.

  As described above, in the semiconductor device 10 and the manufacturing method thereof according to the present embodiment, the fluidity of the sealing resin material used for the COF is improved by lowering the viscosity than in the past. This makes it possible to:

  That is, the resin filling method can be changed from the conventional drawing application on the four side surfaces of the semiconductor chip 4 to the one-side drawing application on the long side. As a result, the fillet portion 6a can be suppressed to 1.5 mm or less from the conventional 1.5 mm on the resin application side, and the fillet portion 6b can be suppressed to 0.8 mm or less on the side not applied with the resin.

  Further, by changing the resin drawing application from the four-sided drawing application to the one-sided drawing application, the tact time required for the resin drawing application can be shortened. As a result, the processing capacity of the resin coating apparatus can be increased. It becomes possible.

  Also, the resin filling method is changed from the drawing application on the four side surfaces of the semiconductor chip 4 to the one-side drawing application on the long side, whereby the sealing resin of the underfill 6 is put in the gap between the semiconductor chip 4 and the flexible wiring board 1. The entrained bubbles generated when filling the resin easily escape to the outside of the sealing resin until the resin flows and cures. As a result, it is possible to prevent bubbles from remaining and to eliminate bubbles generated on the chip.

  Further, by suppressing the resin thickness of the resin drawing application trace 6c to 10 μm or less, it becomes possible to prevent resin cracking and resin peeling due to bending stress at this portion. As a result, the drawing application trace 6c that could not be folded in the prior art also becomes a foldable region, and the resin region that cannot be folded can be reduced. As a result, the external size of the semiconductor device 10 can be made smaller than that of the prior art.

  Further, by optimizing the colorant added to the sealing resin of the semiconductor chip 4, the visibility of the fillet portions 6a and 6b and the drawing application trace 6c is improved, and the resin region management becomes easy.

  In order to manufacture the semiconductor device 10, as shown in Table 3, a coloring material containing 0.15% by weight and having a viscosity of 400 mPa · s at 25 ° C. is used. As shown in 4 (a), a certain amount of coating was performed with a nozzle 41 from one side of the semiconductor chip 4. When the resin is applied, the semiconductor chip 4 is preheated (preheated) to 90 ° C. with a heater in order to improve the fluidity of the resin of the underfill 6 in the gap between the semiconductor chip 4 and the flexible wiring board 1. The resin was applied where it went.

  Next, in order to stabilize the shapes of the fillet portions 6a and 6b and the drawing coating mark 6c and to cure the resin, the resin is put into a curing furnace heated to a predetermined temperature by a hot air circulating furnace or a far infrared heater. It was allowed to stay for a predetermined time for curing to complete the curing.

  As shown in FIG. 1B, the finished dimension value of the semiconductor device 10 manufactured by this manufacturing method is 0.43 mm for the drawing coating trace 6c, and the width B from the semiconductor chip 4 of the fillet portion 6a is 0. The width C of the fillet portion 6b from the semiconductor chip 4 was 0.55 mm, and the fillet portion on the short side of the semiconductor chip 4 was 0.59 mm from the semiconductor chip 4. The resin thickness of the drawing application mark 6c was 3 μm.

  The present invention connects a wiring pattern formed on a flexible film, called COF (Chip On Film), and an electrode formed on at least one mounted semiconductor element for connection to an external circuit. The present invention can be applied to a tape carrier package type semiconductor device and a manufacturing method thereof. As an application of this COF, there is a liquid crystal driver in which a liquid crystal driver IC as a semiconductor element is mounted on a flexible wiring board.

  In addition, as the display module, in addition to the above-described liquid crystal display module such as an active matrix type, an electrophoretic display, a twist ball type display, a reflective display using a fine prism film, a digital mirror device, or the like It can be used for a display using a modulation element. Furthermore, as a light emitting element, an organic EL light emitting element, an inorganic EL light emitting element, an LED (Light Emitting Diode), and other displays using a variable emission luminance, a field emission display (FED), and a plasma display can be used. it can.

(A) shows one Embodiment of the semiconductor device in this invention, Comprising: It is XX sectional drawing of FIG.2 (b), (b) is the fillet part in sealing resin of the said semiconductor device, and It is a top view of resin of a drawing application trace. (A) is a top view which shows the semiconductor device formed in multiple numbers continuously by the flexible film, (b) is a top view which shows the single semiconductor device cut out from the said flexible film. (A) is a top view which shows the liquid crystal module by which the liquid crystal display panel and PW board | substrate were connected to the said semiconductor device, (b) is the YY sectional view taken on the line of (a). (A) is a top view which shows the method of filling sealing resin in the manufacturing process of the said semiconductor device, (b) is a top view which shows the fillet part and drawing application | coating trace of filled sealing resin. It is a graph which shows the relationship between the heating temperature (preheating) of the said sealing resin, and flowability. It is a graph which shows the relationship between the heating temperature (preheating) of the said sealing resin, and resin viscosity. (A) is a graph which shows the relationship between the resin viscosity of the said sealing resin, and the resin thickness of a drawing application trace, (b) is sectional drawing which shows a drawing application trace. (A) is a top view which shows the semiconductor device formed in multiple numbers continuously by the conventional flexible film, (b) is a top view which shows the single semiconductor device cut out from the said flexible film. It is the XX sectional view taken on the line of FIG.8 (b). (A) is a top view which shows the method of filling sealing resin in the manufacturing process of the said semiconductor device, (b) is a top view which shows the fillet part and drawing application | coating trace of filled sealing resin. It is sectional drawing which shows the semiconductor device with which the bubble has generate | occur | produced in the sealing resin with which it filled. FIG. 5 is a cross-sectional view showing a semiconductor device in which one fillet portion is missing with an internal wiring pattern exposed in a filled sealing resin.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Flexible wiring board 2 Wiring pattern 3 Wiring pattern 4 Semiconductor chip (semiconductor element)
5 Bump electrode)
6 Fillet portion 6a Fillet portion 6b Fillet portion 6c Drawing application trace 8 Sprocket hole 10 Semiconductor device 11 Anisotropic conductive adhesive 20 Liquid crystal module 21 Liquid crystal display panel 21a TFT substrate 21b Color filter substrate 30 PW substrate (circuit substrate)
41 nozzles

Claims (15)

In a semiconductor device in which a semiconductor element is mounted on a film-like flexible wiring board on which a wiring pattern is formed,
A sealing resin for protecting the semiconductor element is filled in a gap between the flexible wiring board and the semiconductor element,
A drawing application mark formed by drawing at least the long side of the semiconductor element with a nozzle and filling the sealing resin and a semiconductor element peripheral filling portion are formed,
A semiconductor device, wherein the resin width of the drawing application trace is 0.1 to 1.0 mm, and the resin thickness of the drawing application trace is 10 μm or less. In a semiconductor device in which a semiconductor element is mounted on a film-like flexible wiring board on which a wiring pattern is formed,
A sealing resin for protecting the semiconductor element is filled in a gap between the flexible wiring board and the semiconductor element,
A drawing application mark and a semiconductor element peripheral filling portion are formed by drawing one long side of the semiconductor element with a nozzle and filling the sealing resin,
The resin width of the drawing application mark is 0.1 to 1.0 mm, and the resin thickness of the drawing application mark is 10 μm or less,
The width of the semiconductor element peripheral filling portion is 1.0 mm or less from the semiconductor element on the nozzle application side on one long side of the semiconductor element, while the long side facing the one long side of the semiconductor element Then, the semiconductor device characterized by being 0.8 mm or less from the semiconductor element.   The semiconductor device according to claim 1, wherein the sealing resin has a viscosity at filling of 50 to 600 mPa · s at 25 ° C. 3.   The semiconductor device according to claim 1, wherein the sealing resin has a filling temperature of 60 to 120 ° C. 5.   5. The semiconductor device according to claim 1, wherein the drawing coating trace exists only on one long side of the semiconductor element. A plurality of the flexible wiring boards are continuously formed on the film carrier tape,
The semiconductor device according to claim 1, wherein each of the semiconductor elements is mounted on the flexible wiring board.   6. The semiconductor device according to claim 1, wherein a liquid crystal module on which a liquid crystal display element and peripheral components are mounted is connected to the flexible wiring board. In a method for manufacturing a semiconductor device in which a semiconductor element is mounted on a film-like flexible wiring board on which a wiring pattern is formed,
Filling the gap between the flexible wiring board and the semiconductor element with a sealing resin for protecting the semiconductor element,
The resin width of the drawing application trace of the drawing application trace and the semiconductor element peripheral filling portion formed when drawing at least the long side of the semiconductor element with a nozzle and filling the sealing resin is 0.1 to 1.0 mm. And the resin thickness of this drawing application | coating trace shall be 10 micrometers or less, The manufacturing method of the semiconductor device characterized by the above-mentioned. In a method for manufacturing a semiconductor device in which a semiconductor element is mounted on a film-like flexible wiring board on which a wiring pattern is formed,
Filling the gap between the flexible wiring board and the semiconductor element with a sealing resin for protecting the semiconductor element,
The resin width of the drawing application trace of the drawing application trace and the semiconductor element peripheral filling portion formed when drawing one long side of the semiconductor element with a nozzle and filling the sealing resin is 0.1 to 1.0 mm. And the resin thickness of the drawing application trace is 10 μm or less,
The width of the semiconductor element peripheral filling portion is set to 1.0 mm or less from the semiconductor element on the nozzle application side on one long side of the semiconductor element, while the long side facing the one long side of the semiconductor element Then, the manufacturing method of the semiconductor device characterized by being 0.8 mm or less from a semiconductor element.   10. The method of manufacturing a semiconductor device according to claim 8, wherein when the sealing resin is filled, the resin viscosity is 50 to 600 mPa · s at 25 ° C. 10.   11. The method of manufacturing a semiconductor device according to claim 8, wherein the resin temperature at the time of filling the sealing resin is 60 to 120 ° C. 11.   12. The method of manufacturing a semiconductor device according to claim 11, wherein the semiconductor element is heated when the resin temperature at the time of filling the sealing resin is increased.   The method for manufacturing a semiconductor device according to claim 8, wherein the sealing resin is drawn and filled with a nozzle only from one long side of the semiconductor element. A plurality of the flexible wiring boards are continuously formed on a film carrier tape,
The method of manufacturing a semiconductor device according to claim 8, wherein the semiconductor element is mounted on each of the flexible wiring boards.   The method for manufacturing a semiconductor device according to claim 8, wherein a liquid crystal module on which a liquid crystal display element and peripheral components are mounted is connected to the flexible wiring board.

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