JP2008160072A - Exposure apparatus and device manufacturing method - Google Patents

Abstract

An exposure apparatus that realizes further optimization of illumination light for a circuit pattern to be transferred is provided.
An exposure apparatus comprising: an illumination optical system that illuminates a reticle using a light beam from a light source; and a projection optical system that projects an image of the pattern of the reticle onto a substrate, the illumination optical system comprising: A light shielding member disposed in the vicinity of a plane conjugate with the pupil plane of the projection optical system and movable along the optical axis of the illumination optical system, wherein the light shielding member has a light intensity at a pupil plane of the projection optical system; An exposure apparatus is provided that is moved so that the distribution is non-uniform.
[Selection] Figure 1

Description

  The present invention relates to an exposure apparatus and a device manufacturing method.

  2. Description of the Related Art A projection exposure apparatus has been conventionally used when manufacturing a fine semiconductor device such as a semiconductor memory or a logic circuit by using a photolithography technique. The projection exposure apparatus projects a circuit pattern drawn on a reticle (mask) onto a wafer or the like by a projection optical system and transfers the circuit pattern. In recent years, with the miniaturization of semiconductor devices, various super-resolution techniques for resolving patterns below the wavelength of the exposure light source have been proposed. One such super-resolution technique is called a modified illumination method (oblique incidence illumination method). The modified illumination method is a method in which illumination light is not incident on the reticle with illumination light having a uniform angular distribution, but is incident obliquely on the reticle. For example, an annular illumination method and a dipole illumination method There are quadrupole illumination methods. In the modified illumination method, the angular distribution of the light beam that illuminates the reticle corresponds to the position distribution of the pupil plane (Fourier transform plane) relative to the reticle (object plane).

  The light intensity distribution on the pupil plane of the light flux from the light source is an axial target Gaussian distribution, and in order to make the light intensity distribution on the pupil plane an annular shape, a dipole shape or a quadrupole shape, An optical system that converts the light intensity distribution is required. The simplest optical system for converting the light intensity distribution is, for example, a dipole or quadrupole aperture stop arranged on the exit surface of an optical integrator corresponding to the pupil plane. However, when an aperture stop is used, a part of the light beam from the light source is cut out, so that the light beam from the light source cannot be used efficiently, and the illuminance on the reticle decreases.

  A technique for converting the light intensity distribution on the incident surface of the optical integrator using a diffractive optical element has also been proposed, and a desired light intensity distribution can be obtained without using an aperture stop.

On the other hand, in order to optimize the deformation illumination for the reticle, the annular luminous flux (annular ratio) and coherency σ (that is, the numerical aperture on the exit side of the illumination optical system / the numerical aperture on the incident side of the projection optical system) It has also been proposed to change the size. For example, for the ring zone ratio, an optical element whose incident surface is a concave conical shape and whose exit surface is a flat surface and an optical element whose incident surface is a flat surface and whose exit surface is a convex conical shape are used. Can be changed by. When these two optical elements are arranged on the optical axis, an annular light beam is formed, and the annular ratio and size can be changed by changing the interval between the two optical elements. Also, the coherency σ can be changed by using a zoom optical system with variable magnification.
JP-A-7-201697

  However, simply changing the zone ratio and coherency σ is not sufficient for optimizing the modified illumination (that is, optimizing the illumination light for the circuit pattern to be transferred). For example, even if the zone ratio or coherency σ is changed, adjacent patterns may stick together or the isolated pattern may become thin due to the influence of the proximity effect.

  Accordingly, an object of the present invention is to provide an exposure apparatus that realizes further optimization of illumination light for a circuit pattern to be transferred.

  In order to achieve the above object, an exposure apparatus according to an aspect of the present invention includes an illumination optical system that illuminates a reticle using a light beam from a light source, and a projection optical system that projects an image of the reticle pattern onto a substrate. The illumination optical system includes a light shielding member that is disposed in the vicinity of a plane conjugate with the pupil plane of the projection optical system and is movable along the optical axis of the illumination optical system, The light shielding member is moved so that the light intensity distribution on the pupil plane of the projection optical system becomes non-uniform.

  An exposure apparatus according to another aspect of the present invention is an exposure apparatus that includes an illumination optical system that illuminates a reticle using a light beam from a light source, and a projection optical system that projects an image of the pattern of the reticle onto a substrate. The illumination optical system includes a light shielding member that is disposed in the vicinity of a plane conjugate with the pupil plane of the projection optical system and is movable along the optical axis of the illumination optical system, and the light shielding member includes the light flux And a shielding part that is formed on the transmissive substrate and shields the light flux, and the shielding part is disposed so that the optical axis of the illumination optical system passes through the shielding part. It is characterized by being.

  According to still another aspect of the present invention, there is provided a device manufacturing method including a step of exposing a substrate using the above-described exposure apparatus, and a step of developing the exposed substrate.

  Further objects and other features of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.

  According to the present invention, for example, it is possible to provide an exposure apparatus that realizes further optimization of illumination light for a circuit pattern to be transferred.

  In order to reduce the influence of the proximity effect and further optimize the illumination light for the circuit pattern to be transferred, the inventor can adjust the intensity within the light intensity distribution on the pupil plane of the projection optical system. I found it necessary. For example, since the proximity effect changes by adjusting the peak intensity position in the annular zone of the annular light intensity distribution to the inside or outside, further optimization of the illumination light for the circuit pattern to be transferred It becomes possible to plan. Therefore, it is conceivable to use a diffractive optical element in which the peak intensity position is shifted from the center. However, in this case, one diffractive optical element is required for one light intensity distribution, and many diffractive optical elements are required to realize fine adjustment of the light intensity distribution. In the present invention, the peak intensity position of the light intensity distribution on the pupil plane of the projection optical system is adjusted without requiring a large number of diffractive optical elements to further optimize the illumination light for the circuit pattern to be transferred. An exposure apparatus is proposed.

  Hereinafter, an exposure apparatus according to one aspect of the present invention will be described with reference to the accompanying drawings. In addition, in each figure, the same reference number is attached | subjected about the same member and the overlapping description is abbreviate | omitted. Here, FIG. 1 is a schematic sectional view showing the structure of the exposure apparatus 1 of the present invention.

  In this embodiment, the exposure apparatus 1 is a projection exposure apparatus that exposes a reticle pattern onto a wafer 50 by a step-and-scan method. However, the exposure apparatus 1 can also apply a step-and-repeat method and other exposure methods. The exposure apparatus 1 includes an illumination device, a reticle stage on which the reticle 30 is placed, a projection optical system 40, and a wafer stage on which the wafer 50 is placed.

  The illumination device illuminates a reticle 30 on which a transfer circuit pattern is formed, and includes a light source unit 10 and an illumination optical system 20.

The light source unit 10 uses, for example, a KrF excimer laser with a wavelength of about 248 nm, an ArF excimer laser with a wavelength of about 193 nm, or the like as a light source. However, the light source of the light source unit 10 is not limited to the excimer laser, and for example, an F ₂ laser having a wavelength of about 157 nm may be used.

  The illumination optical system 20 is an optical system that illuminates the reticle 30 using a light beam from the light source unit 10. In this embodiment, the illumination optical system 20 includes a beam shaping optical system 201, a diffractive optical element 202, a condensing optical system 203, a light shielding member 220, a drive unit 230, a zoom optical system 204, and a multi-beam generation. Part 205. The illumination optical system 20 includes an aperture 206, a collimator lens 207, a masking blade 208, an imaging optical system 209, a mirror 210, and an imaging optical system 211.

  The beam shaping optical system 201 shapes a light beam from the light source unit 10 incident through a routing optical system including a mirror and a relay lens into a predetermined shape.

  The diffractive optical element 202 forms a desired light intensity distribution (for example, an annular shape or a quadrupole shape) at the position of the illuminated surface IS via the condensing optical system 203. The diffractive optical element 202 is, for example, a computer generated hologram, and uses an amplitude distribution type hologram, a phase distribution type hologram, a kinoform, or the like. The diffractive optical element 202 is configured to be retracted from the optical path of the illumination optical system 20. The diffractive optical element 202 is arranged, for example, in a switchable turret, and forms various light intensity distributions on the illuminated surface IS by switching to another diffractive optical element.

  The condensing optical system 203 makes the relationship between the exit surface of the diffractive optical element 202 and the illuminated surface IS a Fourier transform surface. Thereby, even if the light beam from the light source unit 10 fluctuates slightly, the incident position and the divergence angle of the light beam incident on the diffractive optical element 202 are always controlled to predetermined values by the beam shaping optical system 201, and the illuminated surface IS The light intensity distribution formed at the position can always be kept constant.

  The light blocking member 220 is positioned in the vicinity of the pupil plane of the illumination optical system 20 and is disposed so as to be movable in the optical axis direction of the illumination optical system. Then, when the light blocking member 220 moves in the optical axis direction of the illumination optical system, the light intensity distribution on the pupil plane of the projection optical system 40 becomes non-uniform. In particular, by moving the light shielding member, the light intensity distribution in the direction perpendicular to the optical axis of the projection optical system 40 (that is, the light intensity in the radial direction from the position of the optical axis of the projection optical system 40 in the light intensity distribution). Changes. In other words, the light shielding member 220 has a function of adjusting the light intensity distribution formed by the diffractive optical element 202. In this embodiment, the light blocking member 220 is disposed in the vicinity of the pupil plane between the condensing optical system 203 and the zoom optical system 204. However, if the light blocking member 220 is disposed in the vicinity of the pupil plane of the illumination optical system 20. Good. For example, it may be arranged at the position of the aperture 206, that is, in the vicinity of the exit surface 205 b of the multi-beam generation unit 205. Further, the light shielding member 220 is arranged in a switchable turret and is configured so that an optimum light shielding member can be selected according to the light intensity distribution formed by the diffractive optical element 202 (according to switching of the diffractive optical element 202). Is done.

  The drive unit 230 drives the light blocking member 220 in a direction parallel to the optical axis of the illumination optical system 20. The drive unit 230 is configured with, for example, an actuator. The driving unit 230 can also drive the light shielding member 220 out of the optical path of the illumination optical system 20 (that is, take out the light shielding member 220 from the optical path of the illumination optical system 20).

  Here, the light shielding member 220 and the driving unit 230 will be described in detail with reference to FIG. FIG. 2 is a diagram illustrating a light intensity distribution formed on the pupil plane of the projection optical system 40 by the light flux that has passed through the vicinity of the light shielding member 220 and the light shielding member 220. Note that FIG. 2 illustrates an example in which the light shielding member 220 is an aperture stop 220A including a single light shielding plate having an opening. The aperture is substantially equal to the outer shape of the annular light intensity distribution formed on the illuminated surface IS by the diffractive optical element 202, and the optical axis passes through the center of the aperture. As shown in FIG. 2, the aperture stop 220 </ b> A as the light shielding member 220 restricts the light beam (light quantity) incident on the vicinity of the outer periphery of the aperture of the aperture stop 220 </ b> A, thereby limiting the light intensity distribution ( Adjust the outer diameter of the zone shape distribution.

  As shown in FIG. 2A, when the aperture stop 220A is positioned in the vicinity of the pupil plane of the illumination optical system 20, the light intensity of the annular zone is uniform on the pupil plane of the projection optical system 40. A distribution is formed. From this state, when the aperture stop 220A is driven in the direction parallel to the optical axis of the illumination optical system 20 by the drive unit 230, as shown in FIG. 2B, the aperture stop 220A is in the state of FIG. The light beam incident on the vicinity of the outer periphery that has passed through the aperture is blocked. As a result, the off-axis light intensity of the light beam that has passed through the aperture stop 220A decreases, and the pupil plane of the projection optical system 40 has a non-uniform intensity distribution as shown in FIG. A light intensity distribution is formed in which the peak intensity position in the band is close to the optical axis side (inner side). In this embodiment, the aperture stop 220A is driven in a direction parallel to the optical axis of the illumination optical system 20 in a direction away from the condensing optical system 203. However, the aperture stop 220A is driven in the condensing optical system 203. You may drive in the direction approaching. Further, when the drive amount of the aperture stop 220A from the state of FIG. 2A (that is, the distance for driving the aperture stop 220A) is increased, the off-axis light intensity is further reduced as shown in FIG. Can be made. Thus, by driving the aperture stop 220A in a direction parallel to the optical axis, it is possible to form a light intensity distribution in which the peak intensity position of the annular zone is close to the optical axis side (inner side). In other words, by driving the aperture stop 220A in a direction parallel to the optical axis, the light intensity distribution on the pupil plane of the projection optical system 40 becomes non-uniform. In particular, the light intensity distribution in the direction perpendicular to the optical axis of the projection optical system (that is, the light intensity in the radial direction from the position of the optical axis of the projection optical system 40 in the light intensity distribution) changes.

  In addition, by using the optical member 220B as shown in FIG. 3 as the light shielding member 220, it is possible to form a light intensity distribution in which the peak intensity position in the annular zone is close to the outside (outside) of the axis. FIG. 3 is a diagram showing a light intensity distribution formed on the pupil plane of the projection optical system 40 by the light beam that passes through the vicinity of the optical member 220B as an example of the light shielding member 220 and the optical member 220B.

  The optical member 220B includes a transmission substrate 222B that transmits the light beam from the light source unit 10, and a shielding unit 224B that is formed on a part of the transmission substrate 222B and blocks the light beam from the light source unit 10. The transmissive substrate 222B is made of, for example, quartz or fluorite. The shielding part 224B is made of, for example, chromium (Cr) or the like, and has a size substantially equal to the inner diameter of the annular shape distribution formed by the diffractive optical element 202. The shielding part 224B is formed so as to coincide with the position of the inner diameter of the annular shape distribution formed by the diffractive optical element 202 when the optical member 220B is positioned in the vicinity of the pupil plane position of the illumination optical system 20. As shown in FIG. 3, the optical member 220 </ b> B as the light shielding member 220 restricts the light beam (light quantity) incident on the vicinity of the outer periphery of the shielding part 224 </ b> B, thereby limiting the light intensity distribution (ring zone) formed by the diffractive optical element 202. Adjust the inner diameter of the shape distribution.

  As shown in FIG. 3A, when the optical member 220B is positioned in the vicinity of the pupil plane of the illumination optical system 20, the light intensity of the annular zone is uniform on the pupil plane of the projection optical system 40. A distribution is formed. From this state, when the optical member 220B is driven in the direction parallel to the optical axis of the illumination optical system 20 by the driving unit 230, as shown in FIG. 3B, the optical member 220B in the state of FIG. The light flux incident on the vicinity of the outer periphery of the shielding portion 224B that has passed through is blocked. As a result, the intensity of the light beam that has passed through the optical member 220B is reduced on the optical axis side (portion close to the optical axis), and is not uniform on the pupil plane of the projection optical system 40 as shown in FIG. A light intensity distribution is formed in which the peak intensity position in the annular zone is close to the outside (outside) of the axis. In this embodiment, the optical member 220B is driven in a direction parallel to the optical axis of the illumination optical system 20 in a direction away from the condensing optical system 203, but the optical member 220B is driven in the condensing optical system 203. You may drive in the direction approaching. Further, when the driving amount of the optical member 220B from the state of FIG. 2A (that is, the distance for driving the optical member 220B) is increased, the strength on the optical axis side can be further reduced. In this way, by driving the optical member 220B in a direction parallel to the optical axis, it is possible to form a light intensity distribution in which the peak intensity position of the annular zone is close to the outside (outside) of the axis. In other words, by driving the optical member 220B in a direction parallel to the optical axis, the light intensity distribution on the pupil plane of the projection optical system 40 becomes non-uniform. In particular, the light intensity distribution in the direction perpendicular to the optical axis of the projection optical system (that is, the light intensity in the radial direction from the position of the optical axis of the projection optical system 40 in the light intensity distribution) changes.

  In the exposure apparatus 1, the light blocking member 220 can also change the peak intensity position of the light intensity distribution on the pupil plane of the projection optical system 40 in cooperation with the drive unit 230. Therefore, the exposure apparatus 1 can optimize the illumination light for the pattern of the reticle 30 by driving the light shielding member 220 according to the pattern of the reticle 30 and making the light intensity distribution non-uniform. In the exposure apparatus 1, the peak intensity position of the light intensity distribution on the pupil plane of the projection optical system 40 can be adjusted with a simple configuration of the light shielding member 220 and the drive unit 230, leading to an increase in size and cost of the apparatus. There is nothing. Of course, by configuring the aperture stop 220A and the optical member 220B to be selectable, the peak intensity position of the light intensity distribution on the pupil plane of the projection optical system 40 can be adjusted both on the optical axis side and on the outside of the axis.

  The driving unit 230 drives the light blocking member 220 so that the light intensity distribution in the direction perpendicular to the optical axis of the projection optical system 40 continuously changes in the light intensity distribution on the pupil plane of the projection optical system 40. It is preferable. Thereby, the peak intensity position of the light intensity distribution on the pupil plane of the projection optical system 40 can be finely adjusted. In addition, as illustrated in FIGS. 2 and 3, the driving unit 230 preferably drives the light blocking member 220 so that coherency is maintained constant. This is because the peak intensity position and coherency of the light intensity distribution are adjusted independently. That is, the coherency can be adjusted by the zoom optical system 204 to the extent that the coherency varies due to the driving of the light blocking member 220.

  Returning to FIG. 1, the zoom optical system 204 projects (images) the light pattern on the illuminated surface IS onto the incident surface 205 a of the multi-beam generation unit 205 at various magnifications.

  The multibeam generation unit 205 forms a light source image having a shape corresponding to the light pattern image on the illuminated surface IS on the exit surface 205b. The multi-beam generation unit 205 is composed of, for example, a fly-eye lens composed of a plurality of minute lenses or a fiber bundle, and a surface light source composed of a plurality of point light sources is formed on the exit surface 205b. Note that the microlenses constituting the fly-eye lens may be diffractive optical elements or microlens arrays.

  The aperture 206 is disposed in the vicinity of the exit surface 205b of the multi-beam generation unit 205, and shields the beam so that a desired light source image can be obtained.

  The collimator lens 207 moves the reticle 30 through the masking blade 208, the imaging optical system 209, the mirror 210, and the imaging optical system 211 using a number of condensing points formed by the multi-beam generation unit 205 as a secondary light source. Illuminate.

  The masking blade 208 is composed of, for example, four light shielding plates that are independently driven, and restricts the illumination area on the reticle 30. The masking blade 208 is disposed at a position optically conjugate with the reticle 30.

  The imaging optical systems 209 and 211 are imaging optical systems in which the position of the masking blade 208 is the object plane and the position of the reticle 30 is the image plane. The imaging optical systems 209 and 211 project the illuminance distribution realized at the position of the masking blade 208 onto the reticle 30.

  The reticle 30 has a circuit pattern and is supported and driven by a reticle stage (not shown). Diffracted light emitted from the reticle 30 is projected onto the wafer 50 via the projection optical system 40. Since the exposure apparatus 1 is a step-and-scan type exposure apparatus, the pattern of the reticle 30 is transferred to the wafer 50 by scanning the reticle 30 and the wafer 50.

  The projection optical system 40 is an optical system that projects the pattern of the reticle 30 onto the wafer 50. As the projection optical system 40, a refractive system, a catadioptric system, or a reflective system can be used. In addition, the projection optical system 40 has a diaphragm 45 for controlling the numerical aperture of the projection optical system 40 on the pupil plane of the projection optical system 40.

  The wafer 50 is supported and driven by a wafer stage (not shown). In the present embodiment, the wafer 50 is used as the substrate to be exposed, but other substrates such as a glass plate can also be used. The wafer 50 is coated with a photoresist.

  In the exposure, the light beam emitted from the light source unit 10 illuminates the reticle 30 by the illumination optical system 20. Light that passes through the reticle 30 and reflects the pattern is imaged on the wafer 50 by the projection optical system 40. In the illumination optical system 20 used by the exposure apparatus 1, as described above, the light intensity distribution on the pupil plane of the projection optical system 40 becomes non-uniform due to the light shielding member 220 and the drive unit 230, and in particular, the light of the projection optical system. The light intensity distribution in the direction perpendicular to the axis can be adjusted. As a result, the exposure apparatus 1 can optimize the illumination light for the pattern of the reticle 30, and has a high quality and high quality device (semiconductor element, LCD element, imaging element (CCD, etc.), thin film magnetic field with high throughput. Head, etc.).

  Next, an embodiment of a device manufacturing method using the above-described exposure apparatus 1 will be described with reference to FIGS. FIG. 4 is a flowchart for explaining the manufacture of devices (semiconductor devices, liquid crystal devices, etc.). Here, an example of manufacturing a semiconductor device will be described. In step 1 (circuit design), a device circuit is designed. In step 2 (reticle fabrication), a reticle on which the designed circuit pattern is formed is fabricated. In step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by the lithography technique of the present invention using the reticle and the wafer. Step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer created in step 4, and includes processes such as an assembly process (dicing and bonding) and a packaging process (chip encapsulation). Including. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device created in step 5 are performed. Through these steps, the semiconductor device is completed and shipped (step 7).

  FIG. 5 is a detailed flowchart of the wafer process in Step 4. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the surface of the wafer. In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition or the like. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. Step 16 (exposure) uses the exposure apparatus 1 to expose a circuit pattern on the reticle onto the wafer. In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), the resist that has become unnecessary after the etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer. According to this device manufacturing method, it is possible to manufacture a higher quality device than before. Thus, the device manufacturing method using the exposure apparatus 1 and the resulting device also constitute one aspect of the present invention.

  The preferred embodiments of the present invention have been described above, but the present invention is not limited to these embodiments, and various modifications and changes can be made within the scope of the gist.

It is a schematic sectional drawing which shows the structure of the exposure apparatus which concerns on this invention. FIG. 2 is a view showing a light intensity distribution formed on the pupil plane of the projection optical system in the vicinity of an aperture stop as an example of a light shielding member of the exposure apparatus shown in FIG. 1 and a light beam that has passed through the aperture stop. FIG. 2 is a view showing a light intensity distribution formed on a pupil plane of a projection optical system in the vicinity of an optical member as an example of a light shielding member of the exposure apparatus shown in FIG. 1 and a light beam that has passed through the optical member. It is a flowchart for demonstrating manufacture of a device. 5 is a detailed flowchart of the wafer process in Step 4 shown in FIG. 4.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Exposure apparatus 10 Light source part 20 Illumination optical system 201 Beam shaping optical system 202 Diffractive optical element 203 Condensing optical system 204 Zoom optical system 205 Multi-beam generation part 206 Aperture 207 Collimator lens 208 Masking blade 209 Imaging optical system 210 Mirror 211 Connection Image optical system 220 Shading member 220A Aperture stop 220B Optical member 222B Transmission substrate 224B Shielding unit 230 Driving unit 30 Reticle 40 Projection optical system 50 Wafer

Claims (7)

An exposure apparatus comprising: an illumination optical system that illuminates a reticle using a light beam from a light source; and a projection optical system that projects an image of the pattern of the reticle onto a substrate,
The illumination optical system is disposed in the vicinity of a plane conjugate with the pupil plane of the projection optical system, and has a light shielding member that is movable along the optical axis of the illumination optical system,
The exposure apparatus according to claim 1, wherein the light shielding member is moved so that a light intensity distribution on a pupil plane of the projection optical system becomes non-uniform.   2. The exposure apparatus according to claim 1, wherein the light intensity in the radial direction changes from the position of the optical axis of the projection optical system in the light intensity distribution by moving the light shielding member.   The exposure apparatus according to claim 1, wherein the light shielding member comprises a single light shielding plate. An exposure apparatus comprising: an illumination optical system that illuminates a reticle using a light beam from a light source; and a projection optical system that projects an image of the pattern of the reticle onto a substrate,
The illumination optical system is disposed in the vicinity of a plane conjugate with the pupil plane of the projection optical system, and has a light shielding member that is movable along the optical axis of the illumination optical system,
The light shielding member includes a transmission substrate that transmits the light flux;
A shielding portion that is formed on the transmission substrate and shields the luminous flux;
The exposure apparatus characterized in that the shielding part is arranged so that an optical axis of the illumination optical system passes through the shielding part.   5. The light intensity in the radial direction changes from the position of the optical axis of the projection optical system in the light intensity distribution on the pupil plane of the projection optical system by moving the light shielding member. The exposure apparatus described.   The exposure apparatus according to claim 1, wherein the light shielding member is moved so that coherency is maintained constant. Exposing the substrate using the exposure apparatus according to any one of claims 1 to 6;
And developing the exposed substrate. A device manufacturing method comprising: