JP2008147364A - Apparatus and method for cleaning semiconductor wafers - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique capable of cleaning the surface of a semiconductor wafer on which a step portion extending in the circumferential direction is formed without supplying a cleaning liquid on a radially outer side from the step portion.
An apparatus for cleaning a surface of a semiconductor wafer on which a step portion extending in the circumferential direction is formed, the rotating means rotating the semiconductor wafer in the circumferential direction, and the semiconductor rotating by the rotating means A guide for supplying a cleaning liquid to a position radially inward of the stepped portion on the surface of the wafer, and a guide surface facing the surface of the semiconductor wafer rotated by the rotating means across the stepped portion. A member is provided.
[Selection] Figure 1

Description

  The present invention relates to a technique for cleaning the surface of a semiconductor wafer.

A technique is known in which a cleaning liquid is supplied to the surface of a rotating semiconductor wafer to clean the surface of the semiconductor wafer.
For example, Patent Document 1 discloses a semiconductor wafer cleaning apparatus using the above technique. The cleaning device described in Patent Document 1 includes a holding device that holds and rotates a semiconductor wafer, and a nozzle that supplies a cleaning liquid to the surface of the semiconductor wafer rotated by the holding device. In this cleaning apparatus, the cleaning liquid supplied to the surface of the semiconductor wafer moves radially outward by centrifugal force and is blown off from the peripheral edge of the semiconductor wafer.

JP-A-8-323303

If a stepped portion extending in the circumferential direction is formed on the surface of the semiconductor wafer, the cleaning liquid will be scattered at the stepped portion when the cleaning liquid moves radially outward on the surface of the semiconductor wafer. As a result, the cleaning liquid does not reach the region outside in the radial direction from the stepped portion, and cleaning unevenness occurs in the region outside in the radial direction from the stepped portion.
The present invention solves the above problems. The present invention provides a technique capable of satisfactorily cleaning the surface of a semiconductor wafer on which a step portion extending in the circumferential direction is formed.

  The present invention provides an apparatus for cleaning the surface of a semiconductor wafer on which a step portion extending in the circumferential direction is formed. The cleaning apparatus includes: a rotating unit that rotates the semiconductor wafer in a circumferential direction; a nozzle that supplies a cleaning liquid to a position radially inward of the stepped portion of the surface of the semiconductor wafer that is rotated by the rotating unit; A guide member having a facing surface facing the surface of the semiconductor wafer rotated by the rotating means across the stepped portion;

In this cleaning apparatus, the cleaning liquid is supplied to a position radially inward of the stepped portion on the surface of the semiconductor wafer. The cleaning liquid supplied to the surface of the semiconductor wafer moves radially outward along the surface of the semiconductor wafer. At this time, the cleaning liquid is guided by the facing surface at the stepped portion. Accordingly, the cleaning liquid is prevented from splashing at the stepped portion, and the cleaning liquid spreads radially outward from the stepped portion. A region radially outward from the stepped portion is sufficiently cleaned with the cleaning liquid.
According to this cleaning apparatus, the surface of the semiconductor wafer on which the step portion extending in the circumferential direction is formed can be cleaned satisfactorily.

In the above cleaning apparatus, it is preferable that a groove portion extending at least in the radial direction is formed on the facing surface across the step portion of the semiconductor wafer.
Thereby, a larger amount of cleaning liquid can be spread to the radially outer region than the stepped portion.

In the cleaning apparatus, the nozzle is preferably formed on the guide member. In this case, it is preferable that the opposing surface of the guide member extends at least from the nozzle formation position to the outer peripheral edge of the semiconductor wafer.
In this cleaning apparatus, the cleaning liquid that moves on the surface of the semiconductor wafer is guided from the position facing the cleaning nozzle to the outer peripheral edge of the semiconductor wafer. Thereby, the surface of the semiconductor wafer can be more reliably cleaned.

The above-described cleaning apparatus can also clean the surface of the semiconductor wafer on which the first stepped portion and the second stepped portion located radially outside the first stepped portion are formed. In this case, the cleaning apparatus includes a first nozzle that supplies a cleaning liquid to a position radially inward of the first stepped portion on the surface of the semiconductor wafer, and a radially outer side of the first stepped portion on the surface of the semiconductor wafer. In addition, it is preferable to include a second nozzle that supplies the cleaning liquid to a position radially inward of the second stepped portion.
Thereby, the surface of the semiconductor wafer on which the first step portion and the second step portion are formed can be more reliably cleaned.

In the above-described cleaning apparatus, it is preferable that the radially outer end of the facing surface is located on the downstream side in the rotational direction of the semiconductor wafer by the rotating means with respect to the radially inner end of the facing surface.
The cleaning liquid supplied to the surface of the semiconductor wafer tends to rotate with the semiconductor wafer. In this cleaning apparatus, since the facing surface is formed along the moving direction of the cleaning liquid, more cleaning liquid can be distributed to a region radially outward from the stepped portion.

The technique of the present invention can also be embodied in a method for cleaning the surface of a semiconductor wafer on which a step portion extending in the circumferential direction is formed. The method includes a step of rotating the semiconductor wafer in a circumferential direction, a step of supplying a cleaning liquid to a position radially inward of the stepped portion of the surface of the rotating semiconductor wafer, and a method of rotating. A step of disposing an opposing surface across the stepped portion on the surface of the semiconductor wafer.
According to this cleaning method, the surface of the semiconductor wafer on which the stepped portion extending in the circumferential direction is formed can be cleaned.

  According to the present invention, it is possible to clean not only a semiconductor wafer having a flat surface but also a surface of a semiconductor wafer in which a step portion extending in the circumferential direction is formed.

First, the main features of the embodiments described below are listed.
(Feature 1) The cleaning device includes four nozzles and four opposing surfaces.
(Characteristic 2) The nozzle sprays the cleaning liquid in a direction inclined outward in the radial direction with respect to the surface of the semiconductor wafer.
(Feature 3) The cleaning apparatus can clean a semiconductor wafer on which a plurality of step portions are formed. For example, when the first stepped portion and the second stepped portion positioned radially outward from the first stepped portion are formed, by supplying the cleaning liquid to a position radially inward of the first stepped portion, The surface of the semiconductor wafer can be cleaned from a region radially inward of the first step portion to a region radially outward of the second step portion. Alternatively, when it is not necessary to clean the region radially inward of the first stepped portion, the cleaning liquid is located at a position radially outside the first stepped portion and radially inward of the second stepped portion. Can be supplied. When cleaning a semiconductor wafer on which a plurality of stepped portions are formed, it is only necessary to supply the cleaning liquid to a position radially inward of the stepped portions present in the range where cleaning is required, and the radial direction from all the stepped portions. It is not always necessary to supply the cleaning liquid to the inner position.

(Example 1)
Embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a cleaning apparatus 10 for a semiconductor wafer 100 according to the first embodiment. FIG. 2 shows a cross-sectional view taken along line II-II in FIG. In FIG. 2, only the outline of the semiconductor wafer 100 is indicated by a broken line in order to clarify the illustration of the cleaning apparatus 10. FIG. 3 shows a cross-sectional view taken along line III-III in FIG. As shown in FIG. 1, the cleaning apparatus 10 is an apparatus for cleaning the surface 114 of the semiconductor wafer 100. The cleaning apparatus 10 can satisfactorily clean not only the semiconductor wafer having a flat surface but also the semiconductor wafer 100 having the step 114b formed on the surface 114. Here, the semiconductor wafer 100 is a single crystal of a semiconductor material (for example, silicon). The semiconductor wafer 100 is manufactured by slicing an ingot of a semiconductor material that has been crystal-grown.

First, the semiconductor wafer 100 to be cleaned by the cleaning apparatus 10 will be described with reference to FIGS. FIG. 9 is a perspective view of the semiconductor wafer 100. The semiconductor wafer 100 has a disk shape having a surface 112 (see FIG. 1) and a surface 114 (see FIGS. 1 and 9) facing the surface 112. In the following, for convenience of explanation, the surface 112 positioned on the upper side in FIG. 1 is referred to as the front surface 112, and the surface 114 positioned on the lower side in FIG. 1 is referred to as the back surface. The front surface 112 of the semiconductor wafer 100 is a flat surface, and the back surface 114 of the semiconductor wafer 100 is a non-flat surface. A center portion 114a, a stepped portion 114b, and a protruding portion 114c are formed on the back surface 114. The central portion 114 a is a circular flat surface with the central axis 120 of the semiconductor wafer 100 as the center. The protruding portion 114c protrudes in the direction along the central axis 120 with respect to the central portion 114a. The protrusion 114c extends in a ring shape along the peripheral edge 114d on the back surface. The stepped portion 114b is located between the center portion 114a and the protruding portion 114c. The stepped portion 114 b is a cylindrical surface that extends in a direction along the central axis 120. As described above, the stepped portion 114 b forming the step extends in the circumferential direction on the back surface 114 of the semiconductor wafer 100. The stepped portion 114b forms a step that is higher (in this case, the thickness is increased) in the radially outer region than in the radially inner region.
Here, the semiconductor wafer 100 shown in FIGS. 1 and 9 is an example of a semiconductor wafer that can be cleaned by the cleaning apparatus 10, and the semiconductor wafer that can be cleaned by the cleaning apparatus 10 is not limited thereto.

  As shown in FIGS. 1 and 2, the cleaning apparatus 10 includes a holding device 50 that holds and rotates the semiconductor wafer 100, and four guide members 40 that face the back side surface 114 of the semiconductor wafer 100 held by the holding device 50. It has. The holding device 50 includes a chuck portion 52 that sucks the back surface 114 of the semiconductor wafer 100, a rotating shaft 54 to which the chuck portion 52 is fixed, and a driving portion 56 that rotates the rotating shaft 54. The four guide members 40 are arranged at equal intervals along the rotation direction D1 of the semiconductor wafer 100. Further, the cleaning device 10 includes a cover 20 that houses the semiconductor wafer 100 held by the holding device 50, and a cleaning liquid supply device 60 that supplies the cleaning liquid 2 to the guide member 40 under pressure. The cleaning liquid supply device 60 includes a tank 62 that stores the cleaning liquid, a pump 64 that sends out the cleaning liquid 2 from the tank 62, and a conduit 66 that guides the cleaning liquid 2 sent out by the pump 64 to the guide member 40.

As shown in FIGS. 1 and 2, the guide member 40 is provided with a nozzle 30 and a facing surface 42 that faces the back surface 114 of the semiconductor wafer 100. The nozzle 30 injects the cleaning liquid 2 supplied from the cleaning liquid supply device 60 toward the back surface 114 of the semiconductor wafer 100. The nozzle 30 is inclined to the radially outer side D <b> 2 of the semiconductor wafer 100. As a result, the cleaning liquid 2 ejected by the nozzle 30 moves along the back surface 114 to the radially outer side D2. The nozzle 30 is located on the radially inner side of the semiconductor wafer 100 with respect to the stepped portion 114 b of the back side surface 114 of the semiconductor wafer 100. The nozzle 30 is formed on the facing surface 42.
The facing surface 42 extends from the nozzle 30 toward the radially outer side D2. The facing surface 42 extends to a position beyond the stepped portion 114 b of the semiconductor wafer 100, and faces the stepped portion 114 b of the back side surface 114 of the semiconductor wafer 100. The facing surface 42 extends to the outer periphery 114 d (see FIG. 4) of the back side surface 114 of the semiconductor wafer 100. The distance between the back surface 114 and the facing surface 42 of the semiconductor wafer 100 is set to a distance between the back surface 114 and the facing surface 42 that is filled with the cleaning liquid 2. This distance differs depending on the affinity between the cleaning liquid 2 and the semiconductor wafer 100, the affinity between the cleaning liquid 2 and the guide member 40, the amount of the cleaning liquid 2 ejected from the nozzle 30, the ejection speed, and the like. As shown in FIGS. 1, 2, and 3, the facing surface 42 is formed with a groove 44 extending along the radial direction of the semiconductor wafer 100. The groove 44 extends from the position facing the central portion 114 a of the semiconductor wafer 100 to the end of the guide member 40 beyond the position facing the stepped portion 114 b. That is, the groove 44 is formed so as to straddle the step 114b. The cross-sectional shape of the groove 44 is not limited to the semicircular shape shown in FIG.
The number of guide members 40 provided in the cleaning apparatus 10 is not limited to four. At least one guide member 40 may be provided, and five or more guide members 40 may be provided.

  A procedure for cleaning the semiconductor wafer 100 by the cleaning apparatus 10 will be described. First, the semiconductor wafer 100 to be cleaned is fixed to the chuck portion 52 of the holding device 50. At this time, the central axis 120 of the semiconductor wafer 100 is made to coincide with the rotation axis of the holding device 50. Further, the back surface 114 to be cleaned is attracted to the chuck portion 52 and the back surface 114 is opposed to the guide member 40. Next, the semiconductor wafer 100 is rotated by the holding device 50 and the supply of the cleaning liquid 2 is started by the cleaning liquid supply device 60. Thereby, the cleaning liquid 2 is supplied from the nozzle 30 to the back surface 114 of the rotating semiconductor wafer 100.

FIG. 4 shows how the cleaning liquid 2 supplied from the nozzle 30 flows. As shown in FIG. 4, the nozzle 30 injects the cleaning liquid 2 in a direction D3 inclined to the radially outer side D2. Thereby, the cleaning liquid 2 ejected from the nozzle 30 flows between the back surface 114 of the semiconductor wafer 100 and the facing surface 42 of the guide member 40 toward the radially outer side D2. Then, the cleaning liquid 2 is discharged from between the outer peripheral end 114 d of the back surface 114 and the outer peripheral end 42 b of the facing surface 42. Here, the outer peripheral end 42 b of the facing surface 42 extends to a position facing the outer peripheral end 114 d of the back surface 114. A flow path for the cleaning liquid 2 is formed between the back surface 114 of the semiconductor wafer 100 and the facing surface 42 of the guide member 40. Although the semiconductor wafer 100 is rotating, the cleaning liquid 2 is held between the back surface 114 and the opposing surface 42 due to the hydrophilicity of the cleaning liquid 2 with respect to the opposing surface 42. Thereby, the back side surface 114b of the semiconductor wafer 100 is wiped by the cleaning liquid 2 flowing along the facing surface 42. The step 114b is present on the flow path of the cleaning liquid 2, but the cleaning liquid 2 is not scattered at the step 114b. The cleaning liquid 2 flows over the stepped portion 114b and is reliably cleaned up to the outer peripheral end 114d of the protruding portion 114c. In addition, the cleaning liquid 2 is prevented from floating in a mist form in the cover 20, and dirt is prevented from reattaching to the back surface 114 of the semiconductor wafer 100.
The groove portion 44 formed on the facing surface 42 guides the cleaning liquid 2 flowing to the radially outer side D2. Further, the groove portion 44 reduces the rate at which the flow path area of the cleaning liquid 2 changes in the stepped portion 114b, and stabilizes the flow of the cleaning liquid 2.
A part of the cleaning liquid 2 adheres to the semiconductor wafer 100 and rotates together with the semiconductor wafer 100. In this case, since the cleaning liquid 2 is absorbed by the cleaning liquid 2 of the other guide member 40 located on the downstream side in the rotation direction or is shaken off by centrifugal force, there is no problem.

According to the cleaning apparatus 10 of the present embodiment, the cleaning liquid 2 is guided by the opposing surface 42 of the guide member 40 when it passes over the stepped portion 114b, and therefore is positioned on the radially outer side of the stepped portion 114 and the stepped portion 114b. The protrusion 114c can be reliably cleaned.
The cleaning apparatus 10 can clean not only the semiconductor wafer 100 on which one step 114b is formed, but also the surface of the semiconductor wafer on which a plurality of steps are formed. In addition to the stepped portion where the radially outer region (projection 114c) is higher than the radially inner region (center portion 114a) like the stepped portion 114b, the radially outer region is compared to the radially inner region. It is also possible to clean the surface of the semiconductor wafer on which the stepped portion to be lowered is formed.

FIG. 5 shows how the cleaning apparatus 10 cleans the surface 214 of the semiconductor wafer 200 on which a plurality of step portions extending in the circumferential direction are formed. As shown in FIG. 5, the back surface 214 of the semiconductor wafer 200 has a center part 214 a, a first rising step part 214 b, a first protruding part 214 c, a first falling step part 214 d, a gap part 214 e, A second rising step portion 214f and a second protruding portion 214g are formed. The center part 214a is a circular flat surface. The first protrusion 214c is formed around the center part 214a and protrudes from the center part 214a. The first rising step portion 214b is formed between the center portion 214a and the first projecting portion 214c, and forms a step in which the radially outer region is higher than the radially inner region. The gap 214e is formed around the first protrusion 214c, and sinks with respect to the first protrusion 214c. The first descending step 214d is formed between the first protrusion 214c and the gap 214e, and forms a step in which the radially outer region is lower than the radially inner region. The second protrusion 214g is formed around the gap 214e and protrudes from the gap 214e. The second rising step portion 214f is formed between the gap portion 214e and the second projecting portion 214g, and forms a step in which the radially outer region is higher than the radially inner region.
As shown in FIG. 5, the nozzle 30 is located radially inward of the plurality of stepped portions 214b, 214d, and 214f. The facing surface 42 of the guide member 40 faces the back surface 214 across the plurality of step portions 214b, 214d, and 214f. Accordingly, the cleaning liquid 2 flows along the back surface 214 while exceeding the plurality of step portions 214b, 214d, and 214f. The back side surface 214 is reliably cleaned by the cleaning liquid 2.

  In the case illustrated in FIG. 5, the nozzle 30 does not have to be located radially inward of all the stepped portions 214b, 214d, and 214f. The nozzle 30 may be appropriately adjusted according to the range in which the back side surface 214 is cleaned. For example, if it is not necessary to clean the central portion 214a, the first rising step portion 214b, and the first protruding portion 214c, the nozzle 30 may be provided at a position facing the first protruding portion 214c. In this case, the first descending step 214d, the gap 214e, the second ascending step 214f, and the second protrusion 214g can be cleaned.

  As shown in FIG. 6, the second nozzle 32 may be added to each guide member 40 when cleaning the surface 214 of the semiconductor wafer 200 on which the plurality of step portions 214 b, 214 d, 214 f are formed. In this case, the first nozzle 30 may be positioned radially inward from the first rising step portion 214b. The second nozzle 32 may be positioned radially outward from the first descending step portion 214d and radially inward from the second ascending step portion 214f. In this case, the nozzles 30 and 32 are arranged in a range where the distance between the back surface 214 and the facing surface 42 is wide. Thus, when the space | interval of the back surface 214 and the opposing surface 42 repeats reduction | decrease and expansion along the radial direction outer side D2, the nozzles 30 and 32 are provided in the position where the space | interval of the back surface 214 and the opposing surface 42 is wide. Thus, the space between the back surface 214 and the facing surface 42 can be reliably filled with the cleaning liquid 2.

  As shown in FIG. 7, in the cleaning apparatus 10 of the first embodiment, the direction of the guide member 40 can be changed. The cleaning liquid 2 ejected from the nozzle 30 is dragged by the rotation of the semiconductor wafers 10 and 200 and tends to flow in the rotation direction D1 of the semiconductor wafers 10 and 200. Therefore, depending on the affinity between the cleaning liquid 2 and the semiconductor material, the facing surface 42 may be disposed so as to be inclined in the rotation direction D1. In other words, the radially outer end 42 b of the facing surface 42 may be positioned downstream of the radially inner end 42 a of the facing surface 42 in the rotation direction D 1 of the semiconductor wafer 100.

(Example 2)
A second embodiment of the present invention will be described with reference to the drawings. FIG. 8 shows the cleaning device 14 of the second embodiment. In the cleaning device 14 of the second embodiment, the following points are changed compared to the cleaning device 10 of the first embodiment. First, in the cleaning device 14 of the second embodiment, the front surface 112 of the semiconductor wafer 100 is held by the chuck portion 52 of the holding device 50 so that the back side surface 114 to be cleaned of the semiconductor wafer 100 is positioned upward. Second, the number of guide members 40 is reduced from four to one. Second, the guide member 40 is disposed above the semiconductor wafer 100 held by the holding device 50. Third, the size of the guide member 40 is changed, and the nozzle 30 is disposed on the central axis 120 of the semiconductor wafer 100.

Also in the cleaning apparatus 14 of the second embodiment, the cleaning liquid 2 is supplied from the nozzle 30 to the back surface 114 of the semiconductor wafer. At this time, the cleaning liquid 2 is supplied to the position of the central axis 120 of the semiconductor wafer 100. The cleaning liquid 2 flows between the back surface 114 of the semiconductor wafer 100 and the facing surface 42 of the guide member 40 toward the radially outer side D <b> 2 of the semiconductor wafer 100. The facing surface 42 faces the back surface 114 of the semiconductor wafer 100 from the position of the central axis 120 to the outer peripheral edge 114d across the stepped portion 114b. Thereby, the cleaning liquid 2 flows from the position of the central axis 120 to the outer peripheral edge 114d over the stepped portion 114b on the back surface 114 of the semiconductor wafer 100. The cleaning liquid 2 does not scatter at the stepped portion 114. The back surface 114 of the semiconductor wafer 100 is cleaned by the cleaning liquid 2 from the position of the central axis 120 to the outer peripheral end 114d.
In the cleaning apparatus 14 of the present embodiment, the guide member 40 is disposed on the opposite side of the holding apparatus 50 with respect to the semiconductor wafer 100. Accordingly, the semiconductor wafer 100 can be held by the front surface 112 that is a non-clean surface, and the entire back surface 114 that is a clean surface can be cleaned.

Specific examples of the present invention have been described in detail above, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above.
For example, the nozzle 30 is not necessarily provided in the guide member 40 and may be provided independently of the guide member 40.
The nozzle 30 may be configured to be able to adjust the injection direction of the cleaning liquid 2. Further, the position of the guide member 40 may be adjusted, and the distance between the back surface 114 of the semiconductor wafer 100 and the facing surface 42 may be adjusted.
The cleaning liquid supply device 60 may be provided with a plurality of tanks for storing a plurality of types of cleaning liquids and a switching valve for selectively connecting one of the plurality of tanks to the pump. Accordingly, it is possible to supply an appropriate type of cleaning liquid according to the substance to be removed from the back surface 114 of the semiconductor wafer 100.
The guide member 40 may be configured to rotate around the central axis 120 of the semiconductor wafer 100. As a result, the cleaning liquid 2 sprayed from the nozzle 30 moves toward the outside in the radial direction of the semiconductor wafer 100 by the centrifugal force acting on itself. In this case, it is not necessary to provide the nozzle 30 so as to be inclined outward in the radial direction of the semiconductor wafer 100. However, it is necessary to provide a speed difference between the rotation speed of the semiconductor wafer 100 and the rotation speed of the guide member 40.
The technical elements described in this specification or the drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology illustrated in the present specification or the drawings achieves a plurality of objects at the same time, and has technical utility by achieving one of the objects.

FIG. 3 is a schematic diagram illustrating a cleaning device according to the first embodiment. II-II sectional view taken on the line in FIG. III-III sectional view taken on the line in FIG. The figure which shows the flow of a washing | cleaning liquid. The figure which shows a mode that the semiconductor wafer in which the several level | step difference was formed is wash | cleaned. The figure which shows the modification which provided the some nozzle. The figure which shows the modification which changed the direction of the guide member. FIG. 4 is a schematic diagram showing a cleaning device of Example 2. The perspective view of a semiconductor wafer.

Explanation of symbols

2: Cleaning solution 10, 14: Cleaning device 20: Cover 30: Nozzle 40: Guide member 42: Opposing surface 44: Groove portion 50: Holding device 52: Chuck portion 54: Rotating shaft 56: Drive unit 60: Cleaning solution supply device 62: Cleaning solution Tank 64: pump 100: semiconductor wafer 112: front side surface 114 of semiconductor wafer: back side surface 114b of semiconductor wafer: stepped portion

Claims (6)

An apparatus for cleaning the surface of a semiconductor wafer on which a step portion extending in the circumferential direction is formed,
Rotating means for rotating the semiconductor wafer in a circumferential direction;
A nozzle for supplying a cleaning liquid to a position radially inward of the stepped portion of the surface of the semiconductor wafer rotated by the rotating means;
A guide member having a facing surface facing the surface of the semiconductor wafer rotated by the rotating means across the stepped portion;
A cleaning device comprising:   The cleaning apparatus according to claim 1, wherein a groove portion extending at least in a radial direction across the step portion of the semiconductor wafer is formed on the facing surface. The nozzle is formed on the guide member,
The cleaning apparatus according to claim 1, wherein an opposing surface of the guide member extends at least from a position where the nozzle is formed to an outer peripheral end of the semiconductor wafer. On the surface of the semiconductor wafer, a first stepped portion and a second stepped portion positioned radially outward from the first stepped portion are formed,
The nozzle is a first nozzle that supplies a cleaning liquid to a position radially inward of the first stepped portion on the surface of the semiconductor wafer, and is radially outward from the first stepped portion of the surface of the semiconductor wafer. The cleaning apparatus according to claim 1, further comprising a second nozzle that supplies a cleaning liquid to a position radially inward of the second stepped portion.   5. The cleaning according to claim 1, wherein the radially outer end of the facing surface is located downstream of the radially inner end of the facing surface in the rotation direction of the semiconductor wafer by the rotating means. apparatus. A method for cleaning the surface of a semiconductor wafer on which a step portion extending in the circumferential direction is formed,
Rotating the semiconductor wafer in the circumferential direction;
Supplying a cleaning liquid to a position radially inward of the stepped portion on the surface of the rotating semiconductor wafer;
Arranging a facing surface across the stepped portion on the surface of the rotating semiconductor wafer; and
A cleaning method comprising:

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