JP2008028115A - Semiconductor device, manufacturing method thereof, and wiring board - Google Patents

Abstract

A semiconductor device having a small external shape and high reliability, a manufacturing method thereof, and a wiring board are provided.
A method of manufacturing a semiconductor device includes a step of preparing a wiring substrate 10 having a groove 12 formed so as to partition a predetermined region (first region), and a semiconductor chip 20 in the first region. A mounting step, a step of providing the resin material 30 in the first region, and a step of curing the resin material 30 to form a resin portion. The bottom surface of the groove 12 is flatter than the surface of the first region. In the step of providing the resin material 30, the resin material 30 is caused to flow from the center side of the first region toward the groove 12, and a part thereof flows into the groove 12.
[Selection] Figure 4

Description

  The present invention relates to a semiconductor device, a manufacturing method thereof, and a wiring board.

  2. Description of the Related Art A semiconductor device manufacturing method is known in which a semiconductor chip is mounted on a wiring board and the semiconductor chip is sealed with a sealing resin. If the outer shape of the sealing resin can be reduced, the outer shape of the semiconductor device can be reduced, but it becomes difficult to reliably seal the semiconductor chip and the like.

For example, when a resin material having a high viscosity (low fluidity) is used, it becomes easy to control the resin material supply region and seal the semiconductor chip with the sealing resin. It becomes difficult to reduce the height. Conversely, if a resin material having a low viscosity (high fluidity) is used, it becomes easy to reduce the height of the sealing resin, but it is possible to control the resin material supply area, It becomes difficult to seal completely.
JP-A-4-146654

  An object of the present invention is to provide a semiconductor device having a small outer shape and high reliability, a manufacturing method thereof, and a wiring board.

(1) A method of manufacturing a semiconductor device according to the present invention includes:
A first region, a second region surrounding the first region, and a groove formed between the first region and the second region so as to partition the first region; Preparing a wiring board having
Mounting a semiconductor chip in the first region;
Providing a resin material in the first region;
Curing the resin material to form a resin portion;
Including
A bottom surface of the groove is flatter than a surface of the first region;
In the step of providing the resin material, the resin material is caused to flow from the center side of the first region toward the groove, and a part thereof flows into the groove.

  According to the present invention, the resin material flows on the surface of the region (first region) partitioned by the groove toward the peripheral side of the region and flows into the groove.

  In the wiring board used in the present invention, since the bottom surface of the groove is flatter than the surface of the first region, the capillary that the resin material receives inside the groove compared to the surface of the first region. The effect of the phenomenon is reduced. For this reason, the resin material hardly flows inside the groove, and the speed at which the resin material flows into the groove becomes slow. Therefore, the resin material can be flowed so as to cover the surface of the first region before the resin material fills the inside of the groove.

  Therefore, according to the present invention, it is possible to prevent the resin material from flowing out to the region outside the groove (second region), so that the resin material can be provided only in a desired region.

  And since a resin part is formed by hardening a resin material, according to this invention, it becomes possible to form a resin part in the shape as designed.

(2) In this method of manufacturing a semiconductor device,
The bottom surface of the groove may be made of metal.

(3) In this method of manufacturing a semiconductor device,
The second region on the surface of the substrate may be less wettable with respect to the resin material than the bottom surface of the groove.

  According to this, the resin material that has flowed into the groove can be prevented from flowing out of the groove beyond the groove. Therefore, it becomes possible to form the resin part as designed more easily and reliably.

Further, in this method of manufacturing a semiconductor device,
The outer surface of the groove may be less wettable with respect to the resin material than the bottom surface of the groove.

  Also by this, the same effect can be obtained, and the resin part as designed can be formed easily and reliably.

(4) In this method of manufacturing a semiconductor device,
An electrical connection is formed in the first region of the wiring board,
After the step of mounting the semiconductor chip, further comprising the step of providing a wire for electrically connecting the electrode of the semiconductor chip and the electrical connection portion;
The resin portion may be formed so as to seal the semiconductor chip, the electrical connection portion, and the wire.

  In this method of manufacturing a semiconductor device, the semiconductor chip is mounted on the wiring board so that the surface opposite to the surface on which the electrodes of the semiconductor chip are formed faces the wiring board. However, as a modification, the semiconductor chip may be mounted on the wiring board so that the surface on which the electrodes of the semiconductor chip are formed faces the wiring board.

(5) In this method of manufacturing a semiconductor device,
A recess is formed in the first region of the wiring board,
The semiconductor chip may be mounted in the recess.

  Thereby, a thin semiconductor device can be manufactured.

(6) A wiring board according to the present invention comprises:
A first region for forming a resin portion, a second region surrounding the first region, and a groove that divides the first region between the first region and the second region Have
The bottom surface of the groove is flatter than the surface of the region for forming the resin portion.

  According to the wiring board of the present invention, it is possible to form a resin portion as designed. That is, according to the present invention, it is possible to provide a wiring board that can manufacture a semiconductor device having a small outer shape and high reliability.

(7) In this wiring board,
The bottom surface of the groove may be made of metal.

(8) In this wiring board,
The second region may be less wettable with respect to the resin material than the bottom surface of the groove.

(9) A semiconductor device according to the present invention includes:
A first region; a second region surrounding the first region; and a groove formed between the first region and the second region so as to partition the first region. A wiring board;
A semiconductor chip mounted in the predetermined area;
A resin portion formed in the predetermined region;
Including
A bottom surface of the groove is flatter than a surface of the predetermined region;
The resin portion is formed so as to cover the surface of the first region and the bottom surface of the groove.

(10) In this semiconductor device,
The bottom surface of the groove may be made of metal.

(11) In this semiconductor device,
A recess is formed in the first region of the wiring board,
The semiconductor chip may be mounted in the recess.

(12) In this semiconductor device,
The second region on the surface of the wiring board may have a portion with poor wettability to the resin material than the bottom surface of the groove.

  Embodiments to which the present invention is applied will be described below with reference to the drawings. However, the present invention is not limited to the following embodiments. Moreover, this invention shall include what combined the following content freely.

  FIG. 1A to FIG. 5 are diagrams for explaining a method of manufacturing a semiconductor device according to an embodiment to which the present invention is applied.

  The method for manufacturing a semiconductor device according to the present embodiment includes preparing a wiring board 10 shown in FIGS. 1 (A) and 1 (B). 1A is a top view of the wiring board 10, and FIG. 1B is a cross-sectional view taken along the line IB-IB in FIG. 1A. Hereinafter, the configuration of the wiring board 10 will be described.

  The wiring board 10 has a groove 12. The groove 12 is formed so as to partition the predetermined region 100. That is, the region partitioned by the groove 12 may be referred to as a region 100. The region 100 is a region where a semiconductor chip 20 described later is mounted and the resin portion 40 is formed. In the present embodiment, the region 100 may be referred to as a first region, and the region outside the groove 12 may be referred to as a second region.

  The groove 12 may be formed so as to surround the region 100 as shown in FIG. At this time, the outer shape of the groove 12 (region 100) may be rectangular. However, the outer shape of the groove 12 is not limited to this. For example, the groove 12 may be circular (elliptical). Alternatively, the outer shape of the groove 12 may be a polygon. Further, the width and depth of the groove 12 are not particularly limited. For example, the width of the bottom surface 14 of the groove 12 may be wider than the depth of the groove 12. Alternatively, the width of the bottom surface 14 of the groove 12 may be narrower than the depth of the groove 12.

  In the present embodiment, the bottom surface 14 of the groove 12 is flatter than the surface of the region 100. That is, the bottom surface 14 of the groove 12 is a surface with less (or less) unevenness than the surface of the region 100. The bottom surface 14 of the groove 12 may be flatter than the side surfaces (the inner surface 13 and the outer surface 15) of the groove 12.

  In the present embodiment, the bottom surface 14 of the groove 12 may be made of metal. For example, as shown in FIG. 1B, the wiring substrate 10 may have a metal layer 16 disposed therein, and the groove 12 may be configured to expose the metal layer 16. In this case, the surface of the metal layer 16 becomes the bottom surface 14 of the groove 12. The metal layer 16 may be electrically connected to another conductive member or may not be electrically connected to another conductive member. The metal layer 16 may be connected to a ground line, for example. However, the bottom surface 14 of the groove 12 may be made of the same material (for example, resin) as the region 100 of the wiring board 10. In this case, the bottom surface 14 of the groove 12 may be flattened. Further, the surface of the region 100 may be roughened.

  The wiring board 10 may further have an electrical connection portion 18. The electrical connection portion 18 is disposed in a region (in the region 100) partitioned by the groove 12. The electrical connection portion 18 may be disposed outside a region where a semiconductor chip 20 described later is mounted. The electrical connection portion 18 may be another conductive member (not shown) disposed outside the region 100 via an internal wiring (not shown) formed in the wiring board 10 or a wiring board. You may electrically connect with the other electrically-conductive member (not shown) arrange | positioned on the surface on the opposite side to the surface in which 10 electrical connection parts 18 were formed.

  The material and configuration of the wiring board 10 are not particularly limited, and any wiring board already known may be used. The wiring board 10 may be made of an organic material. The wiring substrate 10 may be, for example, a substrate including polyethylene terephthalate (PET), an epoxy resin, a polyimide resin, or the like. However, as the wiring substrate 10, a substrate made of an inorganic material or a composite substrate made of an organic-inorganic material may be used. Further, the wiring board 10 may be a rigid board or a flexible board. As the flexible substrate, a tape used in FPC (Flexible Printed Circuit) or TAB (Tape Automated Bonding) technology may be used.

  Further, the method for forming the wiring board 10 is not particularly limited. For example, the wiring substrate 10 may be formed by forming the groove 12 exposing the metal layer 16 in the wiring substrate in which the metal layer 16 has been previously formed. Alternatively, the wiring substrate 10 may be formed by forming a metal layer on the bottom surface of the groove 12 after forming the groove 12 in the wiring substrate. At this time, the metal layer can be formed, for example, by sputtering or plating.

  The method for manufacturing a semiconductor device according to the present embodiment includes mounting a semiconductor chip 20 on a wiring board 10 as shown in FIG. Hereinafter, this step will be described.

First, the configuration of the semiconductor chip 20 will be described. The semiconductor chip 20 may be a silicon chip, for example. The semiconductor chip 20 has an integrated circuit 22. The configuration of the integrated circuit 22 is not particularly limited, and may include, for example, an active element such as a transistor or a passive element such as a resistor, a coil, or a capacitor. Further, the semiconductor chip 20 has an electrode 24. The electrode 24 may be electrically connected to the inside of the semiconductor chip 20. The electrode 24 may be electrically connected to the integrated circuit 22. Alternatively, an electrode that is not electrically connected to the integrated circuit 22 may be referred to as an electrode 24. The electrode 24 may be formed of a metal such as aluminum or copper. The semiconductor chip 20 may further include a passivation film (not shown). The passivation film may be formed of, for example, SiO ₂ , SiN, polyimide resin, or the like. In the semiconductor device manufacturing method according to the present embodiment, the outer shape of the semiconductor chip 20 may be smaller than the region 100.

  In the present embodiment, as shown in FIG. 2, the semiconductor chip 20 is mounted so that the surface opposite to the surface on which the integrated circuit 22 and the electrode 24 are formed faces the wiring substrate 10. The semiconductor chip 20 is mounted inside the region (region 100) defined by the groove 12 of the wiring substrate 10. The semiconductor chip 20 may be bonded to the wiring substrate 10 with an adhesive (not shown).

  In the semiconductor device manufacturing method according to the present embodiment, as shown in FIG. 3, the wires 25 that electrically connect the electrodes 24 of the semiconductor chip 20 and the electrical connection portions 18 of the wiring substrate 10 are provided. Including. That is, in this step, the electrical connection portion 18 and the electrode 24 are electrically connected by the wire 25. Although the material of the wire 25 is not specifically limited, For example, a gold wire may be used. Further, the specific method of providing the wire 25 is not particularly limited, and any known method can be employed.

  The method for manufacturing a semiconductor device according to the present embodiment includes providing a resin material 30 as shown in FIGS. 4 (A) and 4 (B). The resin material 30 may be supplied using a dispenser 32 as shown in FIG. In this step, the resin material 30 is caused to flow from the center side of the region 100 toward the peripheral side of the region 100. In other words, the fluid flows from the center side of the region 100 toward the groove 12. In this step, the resin material 30 is caused to flow so as to reach the groove 12. In the present embodiment, a part of the resin material 30 is caused to flow into the groove 12 (see FIG. 4B).

  In the present embodiment, for example, the resin material 30 may be supplied only in a region overlapping with the semiconductor chip 20 and may flow toward the periphery of the region 100. Alternatively, the resin material 30 may be supplied only to the region inside the electrical connection portion 18 and flow toward the periphery of the region 100.

  In the present embodiment, as shown in FIG. 4B, the resin material 30 is provided so as to cover the semiconductor chip 20, the wire 25, and the electrical connection portion 18. In the present embodiment, the resin material 30 may be provided so as to cover all of the region 100 and the bottom surface 14 of the groove 12. The region where the resin material 30 is provided can be controlled by adjusting the supply amount and viscosity of the resin material 30.

  As shown in FIG. 5, the method for manufacturing a semiconductor device according to the present embodiment includes curing resin material 30 to form resin portion 40. As shown in FIG. 5, the resin portion 40 is formed so as to seal the semiconductor chip 20, the electrical connection portion 18, and the wire 25. Thereby, a highly reliable semiconductor device can be manufactured. The method for curing the resin material 30 is not particularly limited, and any treatment suitable for the resin material 30 (for example, heat treatment or ultraviolet irradiation treatment) may be performed.

  The semiconductor device 1 shown in FIG. 5 may be manufactured through the above steps. The semiconductor device 1 includes a wiring substrate 10 having a groove 12 formed so as to partition a predetermined region 100 (first region), a semiconductor chip 20 mounted in the region 100, and a resin formed in the region 100. Part 40. The bottom surface 14 of the groove 12 is flatter than the surface of the region 100. The resin portion 40 is formed so as to cover the surface of the region 100 and the bottom surface 14 of the groove 12. As an example of an electronic apparatus having the semiconductor device 1, FIG. 6 shows a notebook personal computer 1000 and FIG. 7 shows a mobile phone 2000.

  According to the method for manufacturing a semiconductor device according to the present embodiment, the shape of the resin portion 40 can be easily controlled, and a highly reliable semiconductor device having a small outer shape and high reliability can be efficiently manufactured. . Hereinafter, the effect will be described.

  In the method for manufacturing a semiconductor device according to the present embodiment, resin material 30 is caused to flow from the center side of region 100 toward the peripheral side. When the resin material 30 flows on the wiring substrate 10 (in the region 100), there are various factors that determine the behavior, and one of them is a capillary phenomenon caused by the unevenness of the surface of the region 100. It is done. That is, the resin material 30 may flow under the influence of capillary action caused by the unevenness of the region 100.

  By the way, according to the wiring board 10, the bottom surface 14 of the groove 12 is flatter than the surface of the region 100. Therefore, in the bottom surface 14 of the groove 12, the influence of the capillary phenomenon that the resin material 30 receives is smaller than the surface of the region 100. Therefore, the force that causes the resin material 30 to flow due to capillary action decreases after the resin material 30 flows from the region 100 into the groove 12, and the flow rate of the resin material 30 decreases after flowing into the groove 12. Therefore, the inflow speed of the resin material 30 flowing into the groove 12 becomes slow, and the resin material 30 can be made to flow so as to cover the region 100 before the resin material 30 fills the groove 12. Therefore, according to the manufacturing method of the semiconductor device according to the present embodiment, the resin material 30 can be prevented from flowing out of the groove 12, and the resin is placed at the designed position (only inside the region 100 and the groove 12). A material 30 can be provided. And if the area | region where the resin material 30 is arrange | positioned can be controlled, since the height of the resin material 30 can be adjusted by adjusting the viscosity and supply amount of the resin material 30, the semiconductor chip 20 and the wire 25 The resin material 30 can be provided so as to reliably cover the surface.

  And by hardening this, the resin part 40 can be made into the external shape as designed. That is, according to this method, the semiconductor chip 20 and the like can be reliably sealed, and the resin portion 40 having a small outer shape can be formed. Therefore, according to the method for manufacturing a semiconductor device according to the present embodiment, a semiconductor device having high reliability and a small outer shape can be manufactured.

  The outer surface 15 of the groove 12 may be less wettable with respect to the resin material 30 than the bottom surface 14 of the groove 12. According to this, the resin material 30 that has flowed into the groove 12 is less likely to get wet with the outer surface 15 of the groove 12. Therefore, the resin material 30 can be prevented from flowing out of the groove 12 beyond the groove 12, and the resin portion 40 can be formed as designed. Alternatively, the area outside the groove 12 (second area) on the surface of the wiring substrate 10 may be less wettable with respect to the resin material 30 than the bottom surface 14 of the groove 12. Since the same effect can be obtained by this, a highly reliable semiconductor device can be manufactured.

  Usually, the wettability of the resin material to the resin is worse than the wettability to the metal. Therefore, when a resin substrate is used as the substrate 10, the bottom surface 14 of the groove 12 is formed of metal, so that the wettability of the outer region of the groove 12 and the outer surface 15 of the groove 12 can be improved. Can be worse than gender. However, a process (for example, a liquid repellent process) that deteriorates wettability with respect to the resin material 30 may be performed on the outer region of the groove 12 and the outer surface 15 of the groove 12.

(Modification)
The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

  Hereinafter, some specific modifications will be described.

  In the method of manufacturing a semiconductor device according to the embodiment to which the present invention is applied, a groove 52 shown in FIG. 8 may be formed in the wiring board. The groove 52 is formed so as to partition the predetermined region 101. However, the groove 52 is not formed so as to completely surround the region 101. Note that the bottom surface of the groove 52 is flatter than the surface of the region 101.

  The wiring board has a connecting portion 54 that connects the region 101 and the region 102 (second region) outside the groove 52. As shown in FIG. 8, the wiring board may have one connecting portion 54, but may have a plurality of connecting portions 54. Note that the region 101, the region 102, and the connecting portion 54 may be formed flush with each other. The wiring board may have a wiring 56 that is drawn from the region 101 to the region 102 through the connecting portion 54.

  Alternatively, in the method of manufacturing a semiconductor device according to the embodiment to which the present invention is applied, a plurality of grooves 62 may be formed in the wiring board as shown in FIG. The plurality of grooves 62 are formed so as to partition the predetermined region 103. As shown in FIG. 9, the plurality of grooves 62 may have a shape extending along each side of the rectangular region 103 while avoiding the corners of the rectangular region 103. The bottom surface of each groove 62 is flatter than the surface of the region 103.

  Even when these wiring boards are used, the same effect as described above can be obtained, so that a semiconductor device with high reliability and a small outer shape can be manufactured.

  Alternatively, in the method of manufacturing a semiconductor device according to the embodiment to which the present invention is applied, as shown in FIGS. 10A and 10B, a recess 70 may be formed in the wiring board. The recess 70 is formed inside the region 100 defined by the groove 12. The recess 70 is formed in a region for mounting the semiconductor chip 20.

  In the method of manufacturing a semiconductor device according to the present embodiment, the semiconductor chip 20 is mounted inside the recess 70, a resin material is provided, and the resin material 42 is cured to form the resin portion 42. You may manufacture the semiconductor device 2 shown to (B).

  According to this modification, a thin semiconductor device can be manufactured.

It is a figure for demonstrating the manufacturing method of a semiconductor device. It is a figure for demonstrating the manufacturing method of a semiconductor device. It is a figure for demonstrating the manufacturing method of a semiconductor device. It is a figure for demonstrating the manufacturing method of a semiconductor device. It is a figure for demonstrating the manufacturing method of a semiconductor device. It is a figure which shows an example of the electronic device which has the semiconductor device which concerns on this invention. It is a figure which shows an example of the electronic device which has the semiconductor device which concerns on this invention. It is a figure for demonstrating the manufacturing method of the semiconductor device which concerns on a modification. It is a figure for demonstrating the manufacturing method of the semiconductor device which concerns on a modification. It is a figure for demonstrating the manufacturing method of the semiconductor device which concerns on a modification.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Wiring board, 12 ... Groove, 13 ... Inner side surface, 14 ... Bottom surface, 15 ... Outer side surface, 16 ... Metal layer, 18 ... Electrical connection part, 20 ... Semiconductor chip, 22 ... Integrated circuit, 24 ... Electrode, 25 DESCRIPTION OF SYMBOLS ... Wire, 30 ... Resin material, 32 ... Dispenser, 40 ... Resin part, 42 ... Resin part, 54 ... Connection part, 56 ... Wiring, 70 ... Recess, 100 ... Area, 101 ... Area, 102 ... Area, 103 ... Area

Claims (12)

A first region, a second region surrounding the first region, and a groove formed between the first region and the second region so as to partition the first region; Preparing a wiring board having
Mounting a semiconductor chip in the first region;
Providing a resin material in the first region;
Curing the resin material to form a resin portion;
Including
A bottom surface of the groove is flatter than a surface of the first region;
In the step of providing the resin material, the resin material is caused to flow from the center side of the first region toward the groove, and a part thereof flows into the groove. In the manufacturing method of the semiconductor device according to claim 1,
The method for manufacturing a semiconductor device, wherein the bottom surface of the groove is made of metal. In the manufacturing method of the semiconductor device of Claim 1 or Claim 2,
The method of manufacturing a semiconductor device, wherein the second region on the surface of the substrate has a portion that is less wettable with respect to the resin material than the bottom surface of the groove. In the manufacturing method of the semiconductor device in any one of Claims 1-3,
An electrical connection is formed in the first region of the wiring board,
After the step of mounting the semiconductor chip, further comprising the step of providing a wire for electrically connecting the electrode of the semiconductor chip and the electrical connection portion;
A method of manufacturing a semiconductor device, wherein the resin part is formed so as to seal the semiconductor chip, the electrical connection part, and the wire. In the manufacturing method of the semiconductor device in any one of Claims 1-4,
A recess is formed in the first region of the wiring board,
A method of manufacturing a semiconductor device in which the semiconductor chip is mounted in the recess. A first region for forming a resin portion, a second region surrounding the first region, and a groove that divides the first region between the first region and the second region Have
A wiring board in which a bottom surface of the groove is flatter than a surface of a region for forming the resin portion. The wiring board according to claim 6,
The bottom surface of the groove is a wiring board made of metal. In the wiring board according to claim 6 or 7,
The second region is a wiring board having a portion that is less wettable with a resin material than the bottom surface of the groove. A first region; a second region surrounding the first region; and a groove formed between the first region and the second region so as to partition the first region. A wiring board;
A semiconductor chip mounted in the predetermined area;
A resin portion formed in the predetermined region;
Including
A bottom surface of the groove is flatter than a surface of the predetermined region;
The semiconductor device is a semiconductor device formed so as to cover the surface of the first region and the bottom surface of the groove. The semiconductor device according to claim 9.
The bottom surface of the groove is a semiconductor device made of metal. The semiconductor device according to claim 9 or 10,
A recess is formed in the first region of the wiring board,
A semiconductor device in which the semiconductor chip is mounted in the recess. The semiconductor device according to any one of claims 9 to 11,
The semiconductor device, wherein the second region on the surface of the wiring substrate has a portion that is less wettable with respect to the resin material than the bottom surface of the groove.

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