JP2008008774A - Method of manufacturing semiconductor integrated circuit device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide technology for bringing a probe into contact with a test pad corresponding to the probe by a desired contact pressure in probe inspection using a thin film probe formed by using manufacture technique of a semiconductor integrated circuit device. <P>SOLUTION: The bending rigidity of a first region in the circumference of the probe 7E of an arrangement end of the probe 7 (a plurality of contact terminals) arranging face distribution of the bending rigidity of a thin film sheet 2 (a first sheet) possessed by a probe card used for the probe inspection at a constant interval is small by being compared with the bending rigidity of a second region in the circumference of the probes 7A and 7B between the arrangement ends. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a technology for manufacturing a semiconductor integrated circuit device, and more particularly to a technology effective when applied to inspection of a semiconductor integrated circuit device.

  For example, in Japanese Patent Laid-Open No. 8-220138 (Patent Document 1), when measuring the electrical characteristics of a semiconductor element using a membrane type probe card, the holding plate caused by the load from the shaft and the tension of the thin film is disclosed. In order to prevent warpage and obtain good contact with the semiconductor element, the pressing plate presses the upper side surface that receives the shaft, the cylindrical side surface, and the metal protrusion formed on the thin film and brought into contact with the semiconductor element. It is disclosed that it is formed from a lower surface and an inclined surface formed between the lower surface and a cylindrical side surface.

Further, for example, in Japanese Patent Laid-Open No. 7-135240 (Patent Document 2), a probe apparatus for inspecting electrical characteristics by using bumps formed on an anisotropic conductive thin film so as to be connected to electrodes of a measured object. In this technology, air is blown into the gap between the object to be measured and the thin film on the device base, the bending of the thin film is removed by the rebounding air pressure, and the contact other than the bump is excluded from the measured face. Yes.
JP-A-8-220138 JP 7-135240 A

  There is a probe inspection as an inspection technique for a semiconductor integrated circuit device. This probe inspection includes a function test for confirming whether or not the semiconductor integrated circuit device operates in accordance with a predetermined function, a test for determining a non-defective product / defective product by performing a DC operating characteristic and an AC operating characteristic test, and the like. .

  In recent years, semiconductor integrated circuit devices have become more multifunctional, and it has been promoted to create a plurality of circuits in one semiconductor chip (hereinafter simply referred to as a chip). Further, in order to reduce the manufacturing cost of the semiconductor integrated circuit device, it has been promoted to miniaturize semiconductor elements and wirings to reduce the chip area and increase the number of acquired chips per wafer.

  Therefore, not only the number of test pads (bonding pads) is increased, but also the arrangement of test pads is narrowed and the area of the test pads is also reduced. When a prober having a cantilever-like probe is used for the probe inspection as the pitch of the test pad is reduced, it is difficult to install the probe in accordance with the position of the test pad. There is a problem that becomes.

  The inventors of the present invention have been able to realize a probe inspection even for a chip having a narrow test pad pitch by using a prober having a plurality of probes formed by using a manufacturing technique of a semiconductor integrated circuit device. Are considering. Among them, the present inventors have found the following problems.

  The plurality of probes are part of a thin film probe formed by depositing a metal film and a polyimide film using a manufacturing technique of a semiconductor integrated circuit device, patterning them, and the like, and are inspection targets. It is provided on the lower main surface side of the thin film probe facing the chip.

  At the time of probe inspection, the thin film probe in the region where the probe is formed is pressed from the back surface opposite to the main surface with a pressing tool made of 42 alloy or the like and having a flat pressing surface. By this pressing, the thin film probe is subjected to a forced displacement in a substantially uniform pressing direction from the pressing tool.

  However, the contact pressure with the mating test pad that contacts each of the plurality of probes is not necessarily uniform. That is, when the thin-film probe has probes arranged at non-uniform intervals, the contact pressure with the mating test pad that contacts the probe at a location where the probe arrangement interval is wide is low. It may be higher than the contact pressure with the mating test pad with which the probe contacts.

  Further, when the arrangement direction of the probes changes, such as when the arrangement of the probes is rectangular, the contact pressure of the probes in the corner area may increase.

  Thus, when the contact pressure between the probe and the corresponding test pad is far from the desired state, the electrical contact resistance at the contact portion between the plurality of probes and the corresponding test pads becomes non-uniform. This makes it impossible to accurately check the electrical resistance of the circuit inside the chip.

  In addition, when the contact pressure between the probe and the corresponding test pad is increased, there is a problem that the probe is easily worn, and when the contact pressure is excessively high, there is a problem that a chip to be inspected is damaged.

  In the technique disclosed in Patent Document 1, the distribution of the surface pressure of the probe in these thin film probes is not taken into consideration. Also in the above-mentioned Patent Document 2, the distribution of the surface pressure of the probe in these thin film probes is not taken into consideration.

  In the disclosed technology, it is devised not to generate wavy shapes such as wrinkles on the thin film due to air, but when the surface pressure distribution of the probe due to the placement of the probe occurs Seems to be difficult.

  An object of one representative invention disclosed in the present application is to provide a probe and a test pad to which the probe corresponds in probe inspection using a thin film probe formed by using a manufacturing technique of a semiconductor integrated circuit device. It is an object to provide a technique capable of bringing a contact within a desired contact pressure range.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  That is, in the semiconductor integrated circuit device manufacturing technique including a step of performing an electrical inspection of the semiconductor integrated circuit, a probe card having a plurality of contact terminals used for the electrical inspection is configured as follows.

  In the probe card, the surface distribution of the bending rigidity of the first sheet on which the plurality of contact terminals are formed is the contact terminals at the end of the array among the plurality of contact terminals arranged in a certain direction. The bending rigidity of the surrounding first region is configured to be smaller than the bending rigidity of the second region around the contact terminals other than both ends of the array.

A method for manufacturing a semiconductor integrated circuit device according to the present invention includes the following steps:
(A) Partitioned into a plurality of chip regions, a semiconductor integrated circuit is formed in each of the plurality of chip regions, and a plurality of first electrodes electrically connected to the semiconductor integrated circuit are formed on the main surface Preparing a semiconductor wafer;
(B) a first wiring board on which the first wiring is formed, a plurality of contact terminals for contacting the plurality of first electrodes, and a second wiring electrically connected to the plurality of contact terminals are formed; A first sheet in which the second wiring is electrically connected to the first wiring and the tips of the plurality of contact terminals are held on the first wiring substrate so as to face a main surface of the semiconductor wafer; A first fixing jig for fixing the first sheet to a first surface of the wiring board facing the first sheet; and a plane disposed inside the first fixing jig, wherein the first sheet includes the first sheet. A step of preparing a probe card having a pressing mechanism that presses the first region formed with a plurality of contact terminals from the back surface;
(C) A step of performing electrical inspection of the semiconductor integrated circuit by bringing the tips of the plurality of contact terminals into contact with the plurality of first electrodes.
Here, the first sheet is a singular point between the terminals or in the vicinity of the terminals at the singular point where the arrangement of the contact terminals is discontinuous, such as when the terminals are wide or the terminal of the corner portion where the arrangement direction changes suddenly. Compared to other areas, the bending rigidity is reduced. Examples of means for making the bending rigidity relatively weak include reducing the thickness of the constituent material, deleting the constituent member, replacing it with a soft member, slitting the constituent member, or a singular point. It is a method of adding a structural member to the area | region other than.
A method for manufacturing a semiconductor integrated circuit device according to the present invention includes the following steps:
(A) Partitioned into a plurality of chip regions, a semiconductor integrated circuit is formed in each of the plurality of chip regions, and a plurality of first electrodes electrically connected to the semiconductor integrated circuit are formed on the main surface Preparing a semiconductor wafer;
(B) a first wiring board on which the first wiring is formed, a plurality of contact terminals for contacting the plurality of first electrodes, and a second wiring electrically connected to the plurality of contact terminals are formed; A first sheet in which the second wiring is electrically connected to the first wiring and the tips of the plurality of contact terminals are held on the first wiring substrate so as to face a main surface of the semiconductor wafer; A first fixing jig for fixing the first sheet to a first surface of the wiring board facing the first sheet; and a plane disposed inside the first fixing jig, wherein the first sheet includes the first sheet. A step of preparing a probe card having a pressing mechanism that presses the first region formed with a plurality of contact terminals from the back surface;
(C) A step of performing electrical inspection of the semiconductor integrated circuit by bringing the tips of the plurality of contact terminals into contact with the plurality of first electrodes.
Here, when the terminal arrangement is rectangular, the first sheet is hung on the corner from the middle of the arrangement to the corner of the terminal arrangement, and the bending rigidity on the center side of the terminal arrangement is relative to the area other than the corner. Is a small value. As an example of a means for reducing the bending rigidity, a method of reducing the thickness of the constituent material, replacing it with a soft member, or slitting the constituent member, or conversely, the constituent member in a region other than the corner portion. It is a method to increase.

  The other outline disclosed in the present application will be briefly described as follows.

  A first wiring board on which the first wiring is formed, a plurality of contact terminals for contacting a plurality of first electrodes formed on the main surface of the semiconductor wafer, and a second electrically connected to the plurality of contact terminals. A first sheet in which wiring is formed, the second wiring is electrically connected to the first wiring, and the tips of the plurality of contact terminals are held on the first wiring board so as to face the main surface of the semiconductor wafer And a first fixing jig for fixing the first sheet to a first surface of the first wiring board facing the first sheet, and a flat surface disposed inside the first fixing jig, A pressing mechanism that presses the first region of the one sheet where the plurality of contact terminals are formed from the back surface, and between the terminals where the terminal arrangement interval of the first sheet is suddenly widened, Between terminals or between terminals where the distance is wide or in the vicinity of terminals Cut slits in the first sheet, or remove the constituent material compared to other regions in the material configuration between the terminals of the first sheet, or make the material less bending rigid, or reduce the thickness Probe card that is in shape.

  A first wiring board on which the first wiring is formed, a plurality of contact terminals for contacting a plurality of first electrodes formed on the main surface of the semiconductor wafer, and a second electrically connected to the plurality of contact terminals. A first sheet in which wiring is formed, the second wiring is electrically connected to the first wiring, and the tips of the plurality of contact terminals are held on the first wiring board so as to face the main surface of the semiconductor wafer And a first fixing jig for fixing the first sheet to a first surface of the first wiring board facing the first sheet, and a flat surface disposed inside the first fixing jig, A pressing mechanism that presses the first region of the sheet on which the plurality of contact terminals are formed from the back side, and the terminal arrangement of the first sheet is rectangular, the corner from the middle of the arrangement to the corner portion Cut into the first sheet near the terminal array Subjected to slit, or the material structure of the terminal near the said first sheet in comparison with the other areas to remove the constituent material, or bend to small material rigidity, or the probe card is thinned form thickness.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  That is, in a probe inspection performed using a thin film probe formed using a manufacturing technique of a semiconductor integrated circuit device, a probe (probe) and a test pad corresponding to the probe are brought into contact with each other within a desired contact pressure range. be able to.

  Before describing the present invention in detail, the meaning of terms in the present application will be described as follows.

  A wafer is a single crystal silicon substrate (generally a substantially planar circular shape) used in the manufacture of integrated circuits, an SOI (Silicon On Insulator) substrate, a sapphire substrate, a glass substrate, other insulating, anti-insulating or semiconductor substrates, and their composites. A special substrate. The term “semiconductor integrated circuit device” as used herein refers not only to a semiconductor integrated circuit device such as a silicon wafer or a sapphire substrate, but also to a TFT (Thin Film Transistor) unless otherwise specified. ) And STN (Super-Twisted-Nematic) liquid crystal or the like made on other insulating substrates such as glass.

  The device surface is a main surface of a wafer on which a device pattern corresponding to a plurality of chip regions is formed by lithography.

  Contact terminals are the same as those used in the manufacture of semiconductor integrated circuits for silicon wafers. Wiring is performed by a patterning method that combines photolithography, CVD (Chemical Vapor Deposition), sputtering, and etching. A layer and a tip electrically connected thereto are integrally formed.

  The thin film probe, the thin film probe card, or the protruding needle wiring sheet composite is provided with the contact terminal (protruding needle) that comes into contact with the object to be inspected and the wiring drawn from the contact terminal. A thin film on which a contact electrode is formed, for example, a thickness of about 10 μm to 100 μm.

  The probe card refers to a structure having a contact terminal that contacts a wafer to be inspected and a multilayer wiring board, and the semiconductor inspection apparatus refers to an inspection apparatus having a sample support system on which the probe card and the wafer to be inspected are placed. Say.

  The probe inspection is an electrical test performed with a prober on a wafer for which a wafer process has been completed. The semiconductor integrated circuit is configured by applying the tip of the contact terminal to an electrode formed on the main surface of the chip region. In other words, a non-defective product / defective product is discriminated by performing a function test for confirming whether or not the device operates in accordance with a predetermined function and a DC operation characteristic and an AC operation characteristic test. This is distinguished from a screening test (final test) that is performed after dividing into chips (or after packaging is completed).

  In the following embodiments, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant to each other. There are some or all of the modifications, details, supplementary explanations, and the like.

  Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps and the like) are not necessarily indispensable unless otherwise specified and apparently essential in principle. Needless to say.

  Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  Also, components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof is omitted.

  Further, in all the drawings for explaining the present embodiment, hatching may be given even in a plan view for easy understanding of the configuration of each member.

  In the present embodiment, the insulated gate field effect transistor including the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is called a MISFET (Metal Insulator Semiconductor Field Effect Transistor).

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(Embodiment 1)
FIG. 1 is a plan view of a main part of the lower surface of the probe card according to the first embodiment, and FIG. 2 is a cross-sectional view taken along line AA in FIG.

  As shown in FIGS. 1 and 2, the probe card of the first embodiment is formed of, for example, a multilayer wiring board (first wiring board) 1, a thin film sheet (thin film probe, first sheet) 2, a plunger 3, and the like. ing.

  The thin film sheet 2 is pressed by a pressing ring (first fixing jig) 4 so that the upper main surface (first main surface of the first sheet) 2a of the thin film sheet 2 and the lower main surface of the multilayer wiring board 1 (of the multilayer wiring board). The second main surface 1b is fixed to the multilayer wiring board 1 so as to face each other, and the plunger 3 is attached to the upper main surface of the multilayer wiring board 1 (first main surface of the multilayer wiring board) 1a. An opening 5 is provided at the center of the multilayer wiring board 1, and the thin film sheet 2 and the plunger 3 are bonded to each other through an adhesive ring 6 in the opening 5.

  On the lower main surface (second main surface of the first sheet) 2b of the thin film sheet 2, for example, a plurality of probes (contact terminals) 7 having a quadrangular pyramid shape or a quadrangular pyramid shape are formed. In the thin film sheet 2, a plurality of wirings (second wirings) that are electrically connected to each of the probes 7 and extend from each of the probes 7 toward the end of the thin film sheet 2 are formed.

  A plurality of receiving portions (not shown) that are in electrical contact with the plurality of wirings are formed on the lower principal surface 1b of the multilayer wiring substrate 1, and the plurality of receiving portions are formed on the multilayer wiring substrate. 1 is electrically connected to a plurality of pogo (POGO) seats 8 provided on the upper surface of the multilayer wiring board 1 through wirings (first wirings) formed in the wiring board 1. The pogo seat 8 has a function of receiving a pin for introducing a signal from the tester to the probe card.

  In the first embodiment, the thin film sheet 2 is made of, for example, a thin film mainly composed of polyimide, and is along a region where the probe 7 is formed on the main surface 2a (a region where a plurality of contact terminals are arranged). A metal sheet 45 in which an elastomer (not shown in FIGS. 1 and 2) is overlapped at a predetermined position (details will be described later) is formed.

  In the first embodiment, in order to bring all the probes 7 into contact with the pads (first electrodes) of the chip (semiconductor integrated circuit device) 10 during the probe inspection, the thin film in the region where the probes 7 are formed. The plunger 3 presses the sheet 2 from the upper main surface 2a side of the thin film sheet 2 in the direction of the upper main surface (first main surface of the semiconductor wafer) 10a of the chip (chip region) 10 via the pressing tool (pressing portion) 9. Mechanism (pressing mechanism).

  That is, a constant pressure is applied to the pressing tool 9 by the elastic force of the spring 3 </ b> A disposed in the plunger 3. In the first embodiment, the alloy of the pressing tool 9 can be exemplified by 42 alloy.

  In the first embodiment, as an object to be subjected to probe inspection (electrical inspection) using the probe card, a chip on which an LCD (Liquid Crystal Display) driver is formed can be exemplified. FIG. 3 illustrates a plane on the main surface 10a side of the chip 10 and an enlarged part thereof.

  The chip 10 is made of, for example, a single crystal silicon substrate, and an LCD driver circuit is formed on the main surface thereof.

  In addition, a large number of pads (first electrodes) 11 and 12 that are electrically connected to the LCD driver circuit are arranged on the periphery of the main surface 10a of the chip 10, and the upper length of the chip 10 in FIG. The pads 11 arranged along the side and both short sides serve as output terminals, and the pads 12 arranged along the long side below the chip 10 serve as input terminals.

  Since the number of output terminals of the LCD driver is larger than the number of input terminals, the pads 11 are arranged in two rows along the upper long side and both short sides of the chip 10 in order to widen the interval between adjacent pads 11 as much as possible. The pads 11 in the respective rows are alternately arranged along the upper long side and both short sides of the chip 10.

  In the first embodiment, the pitch LP at which the adjacent pads 11 are arranged is, for example, about 68 μm. Further, in the first embodiment, the pad 11 is a planar rectangle, the length LA of the long side extending in the direction intersecting (orthogonal) with the outer periphery of the chip 10 is about 63 μm, and along the outer periphery of the chip 10. The length LB of the short side that extends is about 34 μm.

  Further, since the pitch LP where the adjacent pads 11 are arranged is about 68 μm and the length LB of the short side of the pads 11 is about 34 μm, the interval between the adjacent pads 11 is about 34 μm.

  The pads 11 and 12 are bump electrodes formed of, for example, Au (gold), and are formed on the input / output terminals (bonding pads) of the chip 10 by a method such as electrolytic plating, electroless plating, vapor deposition, or sputtering. Is.

  FIG. 4 is a perspective view of the pad 11. The height LC of the pad 11 is about 15 μm, and the pad 12 has the same height.

  Further, the chip 10 forms an LCD driver circuit (semiconductor integrated circuit) and input / output terminals (bonding pads) using a semiconductor manufacturing technique in a large number of chip regions partitioned on the main surface of the wafer, and then inputs / output terminals. After the pads 11 and 12 are formed by the above method, the wafer can be diced to divide the chip region into pieces.

  In the first embodiment, the probe inspection is performed on each chip area before dicing the wafer. In the following description of the probe inspection (the step in which the pads 11 and 12 and the probe 7 are in contact), unless otherwise specified, the chip 10 indicates each chip area before dicing the wafer.

  FIG. 5 is a cross-sectional view of a principal part showing a method for connecting the chip 10 to the liquid crystal panel. As shown in FIG. 5, the liquid crystal panel is disposed so as to face the glass substrate 16 through the glass substrate 16 having the pixel electrodes 14 and 15 formed on the main surface, the liquid crystal layer 17, and the liquid crystal layer 17, for example. It is formed from a glass substrate 18 or the like.

  In the first embodiment, the chip 10 is face-down bonded to the pixel electrodes 14 and 15 of the glass substrate 16 of the liquid crystal panel so that the pads 11 and 12 are connected to the chip 10, respectively. The connection to can be illustrated.

  FIG. 6 is an enlarged plan view of the main part showing the periphery of the corner area in the area where the probe 7 on the lower main surface 2b of the thin film sheet 2 is formed, and FIG. 7 is a BB line in FIG. FIG. 8 is a cross-sectional view of main parts taken along line CC in FIG.

  The probe 7 is a part of the metal films 21A and 21B patterned into a plane hexagonal shape in the thin film sheet 2, and a quadrangular pyramid or a truncated pyramid is formed on the lower surface of the thin film sheet 2 of the metal films 21A and 21B. It is the part that pops out into the mold.

  The probes 7 are arranged on the lower main surface 2b of the thin film sheet 2 in accordance with the positions of the pads 11 and 12 formed on the chip 10, and FIG. 6 shows the arrangement of the probes 7 corresponding to the pads 11. .

  In the first embodiment, the pads 11 and 12 are arranged in a rectangular shape, and the probe 7 is also arranged in a rectangular shape in accordance with the arrangement of the pads 11 and 12. In the first embodiment, for the sake of explanation, the left and right direction of the paper on which FIG. 6 is described will be described as a first arrangement direction, and the vertical direction of the paper will be described as a second arrangement direction. Unless otherwise specified below, in all plan views, the left-right direction of the paper on which the drawings are described is the first direction.

  Among these probes 7, the probe 7 </ b> A corresponds to the pads 11 arranged in a row relatively close to the outer periphery of the chip 10 among the pads 11 arranged in two rows, and the probe 7 </ b> B is a pad 11 arranged in two rows. Corresponds to the pads 11 arranged relatively far from the outer periphery of the chip 10.

  On the main surface 2b of the thin film sheet 2, a first arrangement region in which a plurality of probes 7 (probes 7A, 7B, 7E) are arranged along the first arrangement direction, and a second arrangement direction intersecting the first arrangement direction The probe 7 is arranged so as to have a second array region in which a plurality of probes 7 (probes 7A, 7B, 7E) are arrayed and a corner region where the first array region and the second array region intersect. ing.

  Here, the first array region is a region in which the metal films 21A and 21B on which the probes 7 are formed is arrayed, and extends from the corner region to a corner region located on the opposite side along the first array direction. Refers to an area. Similarly, the second array region is a region in which the metal films 21A and 21B on which the probes 7 are formed are arrayed, and extends from the corner region to a corner region positioned on the opposite side in the second array direction. Refers to an area.

  Of the probes 7 arranged in the first arrangement region, the probes 7A and 7B are arranged at the first arrangement interval along the first arrangement direction, and the probe 7E is arranged at the end of each arrangement. . Of the probes 7 arranged in the second arrangement region, the probes 7A and 7B are arranged at the first arrangement interval along the second arrangement direction, and the probe 7E is arranged at the end of each arrangement. ing.

  Further, the distance between the probe 7A and the probe 7B present at the closest position is defined by the distance LX in the first direction and the distance LY in the second direction, and the distance LX is the position where the adjacent pad 11 is disposed. It is about 34 μm, which is half of the pitch LP.

  In the first embodiment, the distance LY is about 93 μm. Further, as shown in FIG. 9, the height LZ (needle height) from the surface of the polyimide film 22 to the tips of the probes 7A and 7B is 50 μm or less (at most 90 μm or less), more preferably 30 μm or less. ing.

  Here, the result of examination by the inventor regarding the contact pressure between the probe 7 and the corresponding pad 11 will be described.

  As already described, a certain pressure is applied to the pressing tool 9 by the elastic force of the spring 3 </ b> A disposed in the plunger 3. And the thin film sheet 2 receives the forced displacement of the pressing direction from the pressing tool 9 almost uniformly.

  However, the contact pressure between the probe 7 and the corresponding pad 11 is not constant. Specifically, for example, the contact pressure of the probe 7E at the arrangement end of the probes 7 arranged at the first arrangement interval along the first arrangement direction is the contact pressure of the probes 7A and 7B other than the arrangement end. It becomes high compared.

  This is considered to be due to the following reason. That is, the thin film sheet 2 is subjected to forced displacement from the pressing tool 9 almost uniformly. This forced displacement is transmitted to the probe 7, and each probe 7 comes into contact with the corresponding pad 11.

  At this time, among the probes 7 arranged in the first arrangement region, the probes 7A and 7B other than the probe 7E are pressed with a pressure corresponding to the substantially uniform forced displacement, so that the contact pressure with the corresponding pad 11 is also reduced. Although it becomes substantially uniform, the probe 7E at the end of the array is also subjected to a pressure due to a forced displacement of a region (empty region) where the probe 7 of the thin film sheet 2 is not formed.

  For this reason, the probes 7E at the arrangement end portions of the probes 7 arranged at the first arrangement interval are the probes 7A and 7B other than the arrangement end portions by the pressing amount due to the forced displacement of the region of the thin film sheet 2 where the probes 7 are not formed. The contact pressure becomes higher than that.

  In this way, when the probe 7E receives a high pressing force, for example, the pad 11 that comes into contact with the probe 7E is dug up by the probe 7E, and the pad material swells from the initial outer dimensions of the pad 11 toward the adjacent pads. As a result of contact with the adjacent pad 11 and short-circuiting, it may be possible that the chip on which the LCD driver to be inspected is not properly inspected.

  Moreover, the chip on which the LCD driver to be inspected is sometimes damaged due to a crack in the member under the pad due to the high pressing force. Alternatively, when the probe 7E comes into strong contact with the pad 11, wear of the probe 7E proceeds and the life of the sheet 2 may be shortened.

  FIG. 6 shows a phenomenon in which the contact pressure of the probe 7E at the array end of the probes 7 arranged at the first array interval is higher than the contact pressure of the probes 7A and 7B other than the array end. As described above, this occurs particularly conspicuously when the arrangement direction of the probes 7 changes (for example, when the probes 7 are arranged along the outer periphery of the rectangle).

  For example, the probe 7 arranged in the first arrangement region in FIG. 6 will be described. The contact pressure of the probe 7E arranged at the position facing the corner region is higher than the contact pressure of the probes 7A and 7B. Similarly, in the second arrangement region of FIG. 6, the contact pressure of the probe 7E is higher than the contact pressure of the probes 7A and 7B.

  In the first embodiment, the surface stiffness distribution of the thin film sheet 2 is determined based on the bending rigidity of the first region around the probe 7E at the end of the array among the probes 7 arranged in the first array region. The bending rigidity of the second region between the plurality of probes 7A or 7B arranged in the first arrangement region is made smaller.

  Similarly, the surface stiffness distribution of the thin film sheet 2 is determined based on the bending rigidity of the first region around the probe 7E at the end of the array among the probes 7 disposed in the second array region. The bending rigidity of the second region between the plurality of probes 7A or 7B arranged in the region is made smaller.

  By making the bending rigidity of the first region of the thin film sheet 2 smaller than the bending rigidity of the second region, the pressure due to the forced displacement of the region where the probe 7 of the thin film sheet 2 is not formed is bent in the first region. Compared to the case where the rigidity is equal to the bending rigidity of the second region, it is difficult to be transmitted to the probe 7E.

  For this reason, if the bending rigidity of the thin film sheet 2 is partially adjusted in accordance with the arrangement of the probes 7, the probes 7 and the corresponding pads 11 can be brought into contact with each other within a desired contact pressure range.

  Here, the planar ranges of the first region and the second region will be described with reference to FIG.

  In FIG. 6, the range on the plane of the first region is a region around the probe 7 </ b> E, and is a quadrangular region defined by the corner region and the position of the probe 7 </ b> E. (In FIG. 6, the range on the plane of the first region with respect to the probe 7E formed in the region where the probes 7A are arranged is surrounded by a dotted line and indicated by hatching).

  Further, a particularly preferable range on the plane of the first region is a region in which the distance from the probe 7E is within the range of the first arrangement interval among the rectangular regions defined by the positions of the corner region and the probe 7E. .

  On the other hand, in FIG. 6, the area on the plane of the second region is the region between the metal films 21A where the adjacent probes 7A are formed, or the metal where the adjacent probes 7B are formed. It is a region between the films 21B.

  The means for reducing the surface stiffness distribution of the thin film sheet 2 to be smaller than the bending stiffness of the first region compared to that of the second region will be described in detail later.

  The metal films 21A and 21B shown in FIGS. 6 to 8 are formed by sequentially laminating, for example, an Rh (rhodium) film and a nickel film from the lower layer. A polyimide film 22 is formed on the metal films 21A and 21B, and wirings (second wirings) 23 that are electrically connected to the metal films 21A and 21B are formed on the polyimide film 22.

  The wiring 23 is in contact with the metal films 21 </ b> A and 21 </ b> B at the bottom of the through hole 24 formed in the polyimide film 22. Further, the wirings 23 are formed radially from the region where the probes 7 are formed toward the multilayer wiring board 1.

  A dummy member 23 </ b> A is formed on the polyimide film 22. Here, the dummy member 23 </ b> A has a function of adjusting the mechanical strength of the thin film sheet 2 and a function of suppressing or preventing mutual interference noise between adjacent wirings 23. Not connected and not involved in signal transmission.

  A polyimide film 25 is formed on the polyimide film 22, the wiring 23, and the dummy member 23A.

  The dummy member 23A is formed in the thin film sheet 2 where the wiring 23 is not present. When the dummy member 23A is formed at a location where the wiring 23 does not exist, the bending rigidity of the thin film sheet 2 becomes substantially uniform at the location where the wiring 23 is formed and the location where the wiring 23 is not formed.

  However, if there is a region where neither the wiring 23 nor the dummy member 23A is formed, the bending rigidity of the region is smaller than that of the region where the wiring 23 or the dummy member 23A is formed.

  In the first embodiment, the wiring 23 or the dummy member 23A is formed in a region between the probes 7A and 7B, that is, the second region. Further, a dummy member 23A is formed in a third region that is adjacent to the second region and extends in the inner circumferential direction of the region where the probe 7 is formed, and is a region adjacent to the second region, Wirings 23 are formed in the fourth region extending in the outer peripheral direction of the region where the probe 7 is formed.

  However, the wiring 23 and the dummy member 23A are not formed in the region around the probe 7E and the region (first region) from the metal film 21A or the metal film 21B where the probe 7E is formed to the corner region. It is said.

  That is, the first region around the probe 7E is configured such that the number of constituent members of the thin film sheet 2 is smaller than that of the second region around the probes 7A and 7B. For this reason, the bending rigidity of the 1st field of thin film sheet 2 can be made relatively small compared with the bending rigidity of the 2nd field.

  Then, by making the bending rigidity of the first region of the thin film sheet 2 relatively small compared to the bending rigidity of the second region, the pads 7 and 12 corresponding to the probe 7 can be brought within a desired contact pressure range. It is possible to make contact.

  In the first embodiment, the difference between the first region and the second region on the constituent member is that the wiring 23 which is a constituent member having higher rigidity than the polyimide film which is the main constituent member of the thin film sheet 2, or This is a dummy member 23A.

  In this way, among the constituent members constituting the second region, it is possible to easily bend the thin film sheet 2 by not forming in the first region a constituent member having a rigidity higher than that of the polyimide film that is the main constituent member. The surface distribution of rigidity can be adjusted.

  The bending rigidity adjusting means of the thin film sheet 2 that partially reduces the constituent members of the thin film sheet 2 so that the constituent members of the first region of the thin film sheet 2 are reduced as compared with the constituent members of the second region. This is an effective method because it can be realized without adding a special process.

  In the first embodiment, the configuration in which neither the wiring 23 nor the dummy member 23A is formed in the first region has been described. However, a means for adding a new component member that does not exist in the first region to the second region may be used. .

  In this case, in the probe card manufacturing process, a process of adding a constituent member is required, which makes the manufacturing process complicated. However, the bending rigidity of the first region of the thin film sheet 2 is compared with the bending rigidity of the second region. And can be made relatively small.

  As already described, a part of the metal films 21A and 21B becomes the probes 7A and 7B formed in a quadrangular pyramid shape or a quadrangular pyramid trapezoidal shape, and a through hole 24 reaching the metal films 21A and 21B is formed in the polyimide film 22. Is done.

  Therefore, if the planar pattern of the metal film 21A and the through hole 24 in which the probe 7A is formed and the planar pattern of the metal film 21B and the through hole 24 in which the probe 7B is formed are arranged in the same direction, they are adjacent to each other. There is a concern that the metal film 21A and the metal film 21B come into contact with each other, so that independent input / output cannot be obtained from the probes 7A and 7B.

  Therefore, in the first embodiment, as shown in FIG. 6, the planar pattern of the metal film 21B and the through hole 24 where the probe 7B is formed is the same as the planar pattern of the metal film 21A and the through hole 24 where the probe 7A is formed. Is a pattern rotated by 180 °.

  Thereby, a wide area of the metal film 21A in which the probe 7A and the through hole 24 are arranged in a plane and a wide area of the metal film 21B in which the probe 7B and the through hole 24 are arranged in a plane are left and right in the drawing. Are not arranged on the straight line, and the planarly tapered regions of the metal film 21A and the metal film 21B are arranged on the straight line in the left-right direction on the paper surface.

  As a result, it is possible to prevent a problem that the adjacent metal film 21A and the metal film 21B come into contact with each other. Even if the pads 11 (see FIG. 3) are arranged at a narrow pitch, the probes 7A, 7B, and 7E can be arranged at positions corresponding to the pads 11 (see FIG. 3).

  In the first embodiment, the case where the pads 11 are arranged in two rows has been described with reference to FIG. 3, but there are also chips arranged in one row as shown in FIG.

  For such a chip, as shown in FIG. 11, the thin film sheet 2 in which the wide region of the metal film 21A is arranged on a straight line in the left-right direction (first arrangement direction) on the paper surface is used. can do.

  In the thin film sheet 2 shown in FIG. 11, along the first arrangement direction, a second region between the probes 7A between the arrangement ends of the probes 7 arranged at the first arrangement interval in the first arrangement region, A dummy member 23A is formed in a third region adjacent to the second region and extending in the inner circumferential direction of the region where the probe 7 is formed.

  However, a region around the probe 7E at the end of the array of the probes 7 arrayed along the first array direction, which is a rectangular region defined by the corner region and the position of the probe 7E (in FIG. Neither the wiring 23 nor the dummy member 23A is formed in the first region, which is a region surrounded by a dotted line and indicated by hatching.

  The bending rigidity of each region of the thin film sheet 2 may be affected by the bending rigidity of the region adjacent to the region. That is, as in the case of the thin film sheet 2 shown in FIG. 11, when the dummy member 23A cannot be directly formed in the second region, the dummy member 23A is provided in the region adjacent to the second region and the dummy region 23 is provided in the first region. By adopting the configuration as described above in which the member 23A is not provided, the bending rigidity of the first region of the thin film sheet 2 can be relatively reduced as compared with the bending rigidity of the second region.

  In other words, as a means for reducing the bending rigidity of the first region as compared with the bending rigidity of the second region, the number of components constituting the first region is set in the second region along the direction intersecting the arrangement direction. It can also be set as the structure which partially reduces the structural member of the thin film sheet 2 so that it may decrease compared with the structural member which comprises an adjacent area | region.

  Then, by making the bending rigidity of the first region smaller than that of the second region, the probe 7 and the corresponding pads 11 and 12 can be brought into contact with each other within a desired contact pressure range.

  Moreover, even if it is a case where the pad 11 is arranged in 1 row as shown in FIG. 10, the thin film sheet 2 demonstrated in FIGS. 6-8 may be used.

  For example, the long side length LA of the pad 11 is about 140 μm, the short side length LB of the pad 11 is about 19 μm, and the pitch LP at which the adjacent pads 11 are arranged is about 34 μm. Consider the case where the spacing between the pads 11 is about 15 μm.

  In the above case, the long side of the pad 11 shown in FIG. 10 is about twice or more as compared with the pad 11 shown in FIG. 3, and the center position of the pad 11 in the short side direction of the pad 11 shown in FIG. Since it can align with a center position, it becomes possible to use the thin film sheet 2 demonstrated using FIGS. In this case, each of the probes 7A and 7B comes into contact with the pad 11 at the positions POS1 and POS2 shown in FIG.

  In addition, when the number of pads 11 is larger, the pads 11 may be arranged in three or more rows. FIG. 13 is a plan view of the main part around the corner region of the region where the probe 7 on the lower main surface 2b of the thin film sheet 2 corresponding to the pads 11 arranged in three rows is formed, and FIG. 14 is arranged in four rows. FIG. 6 is a plan view of a main part around a corner region in a region where a probe 7 on the lower surface of the thin film sheet 2 corresponding to the pad 11 is formed.

  If the size of the chip 10 is the same, the distance LX described with reference to FIG. 6 is further reduced as the number of pads 11 arranged increases, so that the metal film including the metal films 21A and 21B comes into contact. There is further concern.

  Therefore, as shown in FIGS. 13 and 14, the metal films 21A, 21B, 21C, and 21D are obtained by, for example, rotating the planar pattern of the metal film 21A shown in FIG. , 21B, 21C, 21D can be prevented from contacting each other.

  Moreover, although the example which rotated the plane pattern of the metal film 21A shown in FIG. 6 45 degrees was demonstrated here, it is not limited to 45 degrees, The mutual contact of metal film 21A, 21B, 21C, 21D is carried out. Other rotation angles may be used as long as they can be prevented.

  The metal film 21C is provided with a probe 7C corresponding to the pad 11 disposed inside the chip 10 further than the pad 11 to which the probe 7B corresponds, and the metal film 21D has a pad 11 to which the probe 7C corresponds. Further, a probe 7D corresponding to the pad 11 arranged inside the chip 10 is formed.

  Here, FIG. 15 is a fragmentary sectional view taken along line DD in FIG. 14, and FIG. 16 is a fragmentary sectional view taken along line EE in FIG. As shown in FIG. 14, when the metal films 21 </ b> A to 21 </ b> D having the probes 7 </ b> A to 7 </ b> D corresponding to the four rows of pads 11 are arranged, wirings that are electrically connected to the metal films 21 </ b> A to 21 </ b> D from the upper layer, respectively. It is difficult to form all of the above with the same wiring layer.

  This is because when the distance LX is reduced, the metal films 21A to 21D may be brought into contact with each other, and wirings electrically connected to the metal films 21A to 21D may be brought into contact with each other. is there.

  Therefore, in the first embodiment, as shown in FIGS. 15 and 16, it can be exemplified that these wirings are formed from two wiring layers (wirings 23 and 26). A polyimide film 27 is formed on the wiring 26 and the polyimide film 25.

  The relatively lower wiring 23 is in contact with the metal films 21A and 21C at the bottom of the through hole 24 formed in the polyimide film 22, and the relatively upper wiring 26 is a through hole 28 formed in the polyimide films 22 and 25. In contact with the metal films 21B and 21D.

  As a result, in the same wiring layer, it is possible to ensure a large interval between the adjacent wirings 23 or 26, thereby preventing a problem that the adjacent wirings 23 or 26 are in contact with each other.

  In addition, when the pads 11 have five or more rows and the number of probes corresponding to the pads 11 increases and the distance LX becomes narrow, the wiring interval may be widened by forming wiring layers in multiple layers.

  Also in the thin film sheet 2 shown in FIG. 13 and FIG. 14, the probes 7A, 7B between the both ends of the array of the probes 7 arranged along the first arrangement direction as in the thin film sheet 2 described in FIGS. In the second region between 7C and 7D, either the wiring 23, the wiring 26, or the dummy member 23A or 26A is formed.

  However, the area around the probe 7E at the end of the array of the probes 7 arranged in the first arrangement direction is a rectangular area (not shown) defined by the corner area and the position of the probe 7E. The wiring 23, the wiring 26, the dummy member 23A, and the dummy member 26A are not formed in the first region.

  By configuring as described above, the bending rigidity of the first region of the thin film sheet 2 can be relatively reduced as compared with the bending rigidity of the second region. 12 can be brought into contact with each other within a desired contact pressure range.

  Next, the structure of the thin film sheet 2 of the first embodiment will be described with reference to FIGS. 17 to 25 are cross-sectional views of the main part during the manufacturing process of the thin film sheet 2 having the probes 7A, 7B, and 7E corresponding to the two rows of pads 11 (see FIG. 3) described with reference to FIGS. It is.

  17 to 25, in order to make it easy to understand the structural difference between the region where the probes 7A and 7B are formed and the region where the probe 7E is formed, it is on the left side with respect to the paper surface on which each figure is described. The structures of the probes 7A and 7B are shown, and the structure of the probe 7E is shown on the right side.

  First, as shown in FIG. 17, a wafer 31 made of silicon having a thickness of about 0.2 mm to 0.6 mm is prepared, and a silicon oxide film 32 having a thickness of about 0.5 μm is formed on both surfaces of the wafer 31 by a thermal oxidation method. Form.

  Subsequently, the silicon oxide film 32 on the main surface side of the wafer 31 is etched using the photoresist film as a mask, and an opening reaching the wafer 31 is formed in the silicon oxide film 32 on the main surface side of the wafer 31.

  Next, using the remaining silicon oxide film 32 as a mask, the wafer 31 is anisotropically etched using a strong alkali aqueous solution (for example, potassium hydroxide aqueous solution), so that the main surface of the wafer 31 is surrounded by the (111) plane. A square pyramid or quadrangular pyramid shaped hole 33 is formed.

  Next, as shown in FIG. 18, the silicon oxide film 32 used as a mask when forming the hole 33 is removed by wet etching using a mixed solution of hydrofluoric acid and ammonium fluoride.

  Subsequently, a silicon oxide film 34 having a thickness of about 0.5 μm is formed on the entire surface of the wafer 31 including the inside of the hole 33 by performing a thermal oxidation process on the wafer 31. Next, a conductive film 35 is formed on the main surface of the wafer 31 including the inside of the hole 33. The conductive film 35 can be formed, for example, by sequentially depositing a chromium film having a thickness of about 0.1 μm and a copper film having a thickness of about 1 μm by a sputtering method or a vapor deposition method.

  Next, a photoresist film is formed on the conductive film 35, and the photoresist film in a region where the metal films 21A and 21B (see FIGS. 6 to 8) are formed in a later process by a photolithography technique is removed. An opening is formed.

  Next, a conductive film 37 and a conductive film 38 having high hardness are sequentially deposited on the conductive film 35 appearing at the bottom of the opening of the photoresist film by an electrolytic plating method using the conductive film 35 as an electrode. .

  In the first embodiment, the conductive film 37 may be an Rh film and the conductive film 38 may be a nickel film. Through the steps so far, the above-described metal films 21A and 21B can be formed from the conductive films 37 and 38. Further, the conductive films 37 and 38 in the hole 33 become the above-described probes 7A and 7B. The conductive film 35 is removed in a later step, which will be described later.

  In the metal films 21A and 21B, when the above-described probes 7A, 7B, and 7E are formed in a later process, the conductive film 37 formed from the Rh film becomes the surface, and the conductive film 37 directly contacts the pad 11 Will do. For this reason, it is preferable to select a material having high hardness and excellent wear resistance as the conductive film 37.

  Further, since the conductive film 37 is in direct contact with the pad 11, if the chips 11 scraped by the probes 7A, 7B, and 7E adhere to the conductive film 37, a cleaning process is required to remove the chips. There is a concern that the inspection process will be extended.

  Therefore, as the conductive film 37, it is preferable to select a material to which the material forming the pad 11 is difficult to adhere.

  Therefore, in Embodiment 1, an Rh film that satisfies these conditions is selected as the conductive film 37. Thereby, the cleaning process can be omitted.

  Next, after removing the photoresist film used to form the metal films 21A and 21B (conductive films 37 and 38), the metal films 21A and 21B and the conductive film 35 are covered as shown in FIG. Thus, a polyimide film 22 (see also FIGS. 7 and 8) is formed. Subsequently, the aforementioned through hole 24 reaching the metal films 21 </ b> A and 21 </ b> B is formed in the polyimide film 22. The through hole 24 can be formed by drilling using a laser or dry etching using an aluminum film as a mask.

  Next, as shown in FIG. 20, a conductive film 42 is formed on the polyimide film 22 including the inside of the through hole 24. The conductive film 42 can be formed, for example, by sequentially depositing a chromium film having a thickness of about 0.1 μm and a copper film having a thickness of about 1 μm by a sputtering method or a vapor deposition method.

  Subsequently, after a photoresist film is formed on the conductive film 42, the photoresist film is patterned by a photolithography technique, and an opening reaching the conductive film 42 is formed in the photoresist film.

  Next, a conductive film 43 is formed on the conductive film 42 in the opening by plating. In the first embodiment, as the conductive film 43, a copper film, or a laminated film in which a copper film and a nickel film are sequentially deposited from the lower layer can be exemplified.

  Next, after removing the photoresist film, the conductive film 42 is etched using the conductive film 43 as a mask, thereby forming the wiring 23 and the dummy member 23A composed of the conductive films 42 and 43. The wiring 23 can be electrically connected to the metal films 21 </ b> A and 21 </ b> B at the bottom of the through hole 24.

  In the etching step, the dummy member 23A is formed in the second region of the thin film sheet 2 where the wiring 23 is not formed, but the dummy member 23A is not formed in the first region of the thin film sheet 2.

  Next, as shown in FIG. 21, the polyimide film 25 described above is formed on the main surface of the wafer 31. The polyimide film 25 functions as an adhesive layer for a metal sheet that is fixed to the main surface of the wafer 31 in a later step.

  Next, as shown in FIG. 22, a metal sheet (second fixing jig) 45 is fixed to the upper surface of the polyimide film 25. As the metal sheet 45, a material having a low linear expansion coefficient and close to the linear expansion coefficient of the wafer 31 formed of silicon is selected. In the first embodiment, for example, 42 alloy (42% nickel and iron Examples include 58% alloy with a linear expansion coefficient of 4 ppm / ° C. or Invar (36% nickel and 64% iron with a linear expansion coefficient of 1.5 ppm / ° C.).

  Further, instead of using the metal sheet 45, a silicon film made of the same material as the wafer 31 may be formed, or a material having a linear expansion coefficient similar to that of silicon, for example, an alloy of iron, nickel and cobalt, or ceramic A mixed material with resin may be used.

  In order to fix such a metal sheet 45, the metal sheet 45 is superposed while being aligned with the main surface of the wafer 31, and heated at a temperature equal to or higher than the glass transition temperature of the polyimide film 25 while being pressurized at about 10 to 200 kgf / cm 2. It can be realized by heating and pressure bonding. By fixing such a metal sheet 45 using the polyimide film 25, the strength of the thin film sheet 2 to be formed can be improved.

  In addition, when the metal sheet 45 is not fixed, the probes 7A, 7B, 7E and the corresponding pads 11 are relative to each other due to the expansion or contraction of the thin film sheet 2 and the inspection target wafer due to the temperature during the probe inspection. There is a concern that the position is shifted and the probes 7A, 7B, and 7E cannot contact the corresponding pads 11.

  On the other hand, according to the first embodiment, since the metal sheet 45 is fixed, the expansion amount or the contraction amount of the thin film sheet 2 and the inspection target wafer due to the temperature during the probe inspection can be made uniform. Thereby, it is possible to prevent the relative positions of the probes 7A, 7B, and 7E and the corresponding pads 11 from shifting.

  In other words, the probes 7A, 7B, 7E and the corresponding pads 11 can always be kept in electrical contact regardless of the temperature during probe inspection. In addition, it is possible to secure a relative position system between the thin film sheet 2 and the inspection target wafer under various circumstances.

  Next, the metal sheet 45 is etched using a photoresist film patterned by a photolithography technique as a mask to form an opening 46 in the metal sheet 45 on the probes 7A, 7B, and 7E. In the first embodiment, this etching can be spray etching using a ferric chloride solution.

  In the step of forming the opening 46, the opening 47 may also be formed in the first region around the probe 7E of the thin film sheet 2. An elastomer 48 is formed in the opening 47 in the next step, and this elastomer 48 is a material having a lower rigidity than the metal sheet 45.

  That is, it is set as the structure which replaced a part of structural member of the 1st area | region of the thin film sheet 2 with the member with small bending rigidity compared with the structural member of the location corresponding to the said 2nd area | region.

  By configuring as described above, the bending rigidity of the first region can be made relatively small as compared with the bending rigidity of the second region. Therefore, the probe 7 and the corresponding pads 11 and 12 respectively are desired. It becomes possible to make contact within the contact pressure range.

  Next, after removing the photoresist film, an elastomer 48 is formed in the opening 46 and the opening 47 as shown in FIG. At this time, the elastomer 48 is formed so that a predetermined amount protrudes above the opening 46 and the opening 47. In the first embodiment, examples of a method for forming the elastomer 48 include a method of printing or applying a dispenser with an elastic resin in the opening 46 and the opening 47, or a method of installing a silicon sheet.

  The elastomer 48 absorbs variations in the height of the tips of the individual probes 7A and 7B by local deformation while reducing the impact when the tips of the multiple probes 7A, 7B and 7E come into contact with the pad 11. Contact between the probes 7A and 7B and the pad 11 is realized by uniform biting following the variation in the height of the pad 11.

  Next, as shown in FIG. 24, the silicon oxide film 34 on the back surface of the wafer 31 is removed by etching using a mixed solution of hydrofluoric acid and ammonium fluoride, for example. Subsequently, the wafer 31 which is a mold material for forming the thin film sheet 2 is removed by etching using a strong alkaline aqueous solution (for example, potassium hydroxide aqueous solution). Next, the silicon oxide film 34 and the conductive film 35 are sequentially removed by etching.

  At this time, the silicon oxide film 34 is etched using a mixed solution of hydrofluoric acid and ammonium fluoride, and the chromium film contained in the conductive film 35 is etched using a potassium permanganate aqueous solution and contained in the conductive film 35. The copper film to be etched is etched using an alkaline copper etchant.

  Through the steps so far, the Rh film, which is the conductive film 37 (see FIG. 18) forming the probes 7A, 7B, and 7E, appears on the surfaces of the probes 7A, 7B, and 7E. As described above, in the probes 7A, 7B, and 7E having the Rh film formed on the surface, Au or the like, which is a material of the pad 11 that the probes 7A, 7B, and 7E are in contact with, hardly adheres, and has higher hardness than Ni. In addition, it is difficult to be oxidized and the contact resistance can be stabilized.

  Next, the pressing tool 9 made of, for example, 42 alloy is bonded onto the elastomer 48 to manufacture the thin film sheet 2 of the first embodiment.

  The thin film sheet 2 according to the first embodiment manufactured by the above-described process has a configuration in which the metal sheet 45 is adhered, so that the first region and the first region of the thin film sheet 2 are compared with a configuration in which the metal sheet 45 is not adhered. It becomes possible to easily adjust the difference in bending rigidity between the two regions.

(Embodiment 2)
In the first embodiment, as a means for relatively reducing the bending rigidity of the first region of the thin film sheet 2 as compared with the bending rigidity of the second region, the constituent members of the first region are used in the second region. A method for reducing the number of structural members compared to the structural members and a method for replacing a part of the structural members in the first region with members having a lower bending rigidity compared with the structural members in the corresponding portions of the second region have been described. However, different measures can be taken.

  In the first embodiment, the case where the first region exists in the corner region where the arrangement direction of the probes 7 changes has been described. However, as described in the first embodiment, the arrangement of the probes 7 is the same as that of the inspection object. Since it is determined according to the arrangement of the pads, not all the probes 7 are necessarily arranged at regular intervals, and the arrangement intervals (second arrangement intervals) of the probes 7 are arranged in the same arrangement direction. There may be a singular point that is wider than the arrangement interval (first arrangement interval) of the probes 7.

  Therefore, in the second embodiment, as an example, there is a case where there is a singular point where the second arrangement interval of the probes 7 is wider than the first arrangement interval of the probes 7 arranged along the same arrangement direction. The bending rigidity adjusting means of the thin film sheet 2 different from the method described in the first embodiment will be described.

  FIG. 26 is an enlarged plan view of a principal part showing an area around the singular point where the probes 7 are arranged on the lower surface of the thin film sheet 2 according to the second embodiment and the probe 7 is arranged at a wide interval. 27 is a fragmentary sectional view taken along line FF in FIG. 26, and FIG. 28 is a fragmentary sectional view taken along line GG in FIG.

  In FIG. 26, the arrangement of the probes 7 is as follows. Probes (first contact terminals) 7A (or probes 7B) arranged at first arrangement intervals along the left-right direction (first arrangement direction) on the paper surface on which FIG. And a probe (second probe) arranged adjacent to the probe (first contact terminal at the arrangement end of the first contact terminal) 7F at the arrangement end of the first arrangement interval along the first arrangement direction. Contact terminals) 7G.

  The arrangement interval (second arrangement interval) between the probe 7F and the probe 7G is wider than the first arrangement interval.

  Thus, when there is a singular point where the arrangement interval of the probes 7 is wider than the arrangement interval of the other probes 7, it corresponds to the probe 7F at the end of the arrangement of the probes 7 arranged at a narrow interval. The contact pressure with the pad 11 may be higher than the contact pressure with the probe 11 corresponding to the probe 7A, 7B.

  As described in the first embodiment, this is because the probes 7A and 7B other than the probe 7F at the end of the array of the probes 7 arrayed at the first array interval have a pressure corresponding to a substantially uniform forced displacement. Since the pressure is pressed, the contact pressure with the corresponding pads 11 and 12 becomes substantially uniform, but the probe 7F at the end of the array is a region where the probe 7 of the thin film sheet 2 is not formed (between the probe 7F and the probe 7G). This is considered to be due to the pressing by the forced displacement of the empty area.

  Therefore, in the second embodiment, the bending rigidity of the thin film sheet 2 is distributed in plane, and the bending rigidity of the first region between the probes 7F and 7G arranged at the second arrangement interval is narrower than the second arrangement interval. The bending rigidity of the second region between the probes 7A (or probes 7B) arranged at the first arrangement interval is made smaller.

  As means for adjusting the bending rigidity of the thin film sheet 2, the groove 50 is formed in the first region of the thin film sheet 2 as shown in FIGS. 26 to 28.

  That is, the thickness of the first region of the thin film sheet 2 (the distance from the lower main surface 2b of the thin film sheet 2 to the upper main surface 2a that is in contact with the pressing tool 9) is thinner than the thickness of the second region. Thus, the thin film sheet 2 is partially thinned.

  And by making the thickness of the 1st field of thin film sheet 2 thinner than the thickness of the 2nd field, the bending rigidity of the 1st field can be made relatively small compared with the bending rigidity of the 2nd field.

  A case in which constituent members that cannot be removed due to functional restrictions such as non-dummy wirings 23 are formed densely in the area around the probe 7F and the probe 7G of the thin film sheet 2 will be described in the first embodiment. As described above, it may be difficult to adjust the bending rigidity of the thin film sheet 2 depending on the number of constituent members.

  The means for adjusting the bending rigidity by adjusting the thickness of the thin film sheet 2 described in the second embodiment is formed by densely arranging components such as wirings 23 in the first region of the thin film sheet 2. This is especially effective when

  Next, the manufacturing process of the thin film sheet 2 of this Embodiment 2 is demonstrated. Only parts different from the manufacturing process described in the first embodiment will be described. The manufacturing process of the thin film sheet 2 of the second embodiment is different from the manufacturing process of the thin film sheet 2 of the first embodiment in that the grooves 50 are formed in the polyimide film 22.

  For example, in the manufacturing process described in the first embodiment, the groove 50 is formed in the polyimide film 22 by sequentially forming the silicon oxide film 34, the chromium film included in the conductive film 35, and the copper film included in the conductive film 35. After removal by etching, trimming can be performed by laser processing.

  Alternatively, after removing the photoresist film used to form the metal films 21A and 21B (conductive films 37 and 38) in the manufacturing process described in the first embodiment, the metal films 21A and 21B and the conductive film 35 are removed. Before the polyimide film 22 is formed so as to cover the surface, a mask is formed in advance in a portion corresponding to the groove 50, and the silicon oxide film 34, the chromium film included in the conductive film 35, and the conductive film 35 include The mask may be removed by etching after sequentially removing the copper film to be etched.

  In the second embodiment, the location where the groove 50 is formed is described as the polyimide film 22, but the location where the groove 50 is formed is not limited to the polyimide film 22. For example, a groove can be provided in the metal sheet 45 or the elastomer 48 described in the first embodiment.

  When the groove portion 50 is formed in the polyimide film 22 that is a layer on which the probe 7 is formed, the groove portion can be provided in the vicinity of the probe 7F. Therefore, when the groove width, the groove length, and the groove depth are the same, the polyimide film When the groove portion is formed on the elastomer 48, the bending rigidity of the first region can be made smaller than when the groove portion is formed on the elastomer 48 or the like. However, when the groove portion is formed on the elastomer 48, the groove width and the groove length are appropriately set. The groove depth may be adjusted.

  Moreover, although the thickness adjusting means of the thin film sheet 2 formed in the first region has been described as the groove portion 50 in the second embodiment, the thickness adjusting means is not limited to the groove. That is, a hole that penetrates through the thin film sheet 2 (from the lower main surface 2b on which the probe 7 is formed to the upper main surface 2a in contact with the pressing tool 9) is formed in the region where the groove 50 shown in FIG. 26 is formed. May be.

  If there are structural members that cannot be removed from the functional restrictions, such as the wiring 23, in the first region of the thin film sheet 2, through holes cannot be formed. Holes can be formed.

  When forming the through hole in the first region, if the width and length to be formed are the same, the bending rigidity of the first region can be made smaller than providing the groove.

  Moreover, although the example which forms the groove part 50 in the 3rd area | region of the thin film sheet 2 was demonstrated in this Embodiment 2, the area | region which forms the groove part 50 is not limited to a 3rd area | region.

  For example, when the groove portion 50 or the through hole cannot be formed in the third region due to the short arrangement interval between the adjacent probes 7F and 7G, the direction along the direction intersecting the first arrangement direction as shown in FIG. A third region adjacent to the first region and in a direction opposite to the direction in which the wiring 23 is formed from the probes 7F and 7G or the third region in the direction in which the wiring 23 is formed from the probes 7F and 7G. The grooves 50 and the through holes may be extended in the four regions along the first arrangement direction.

  When the groove 50 or the through hole is formed in the third region or the fourth region, the bending rigidity of the first region of the thin film sheet 2 is not directly reduced, so the groove 50 directly in the first region described above. Or, compared with the method of forming a through hole, the effect of reducing the bending rigidity of the first region is low, but the groove portion 50 formed in the third region or the fourth region is appropriately adjusted in groove width, groove length, and groove depth. By doing so, the bending rigidity of the first region can be made smaller than the bending rigidity of the second region.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the first embodiment, when the probes 7 are arranged in two arrangement areas along two directions intersecting, the first area is defined as an area including a corner area where the two arrangement areas intersect. As a means for relatively reducing the bending rigidity of the second region compared with the bending rigidity of the second region, a method of reducing the constituent members of the first region compared to the constituent members of the second region, and A method has been described in which a part of the constituent members in the first region is replaced with a member having a lower bending rigidity than the constituent members in the corresponding portions of the second region.

  However, the bending rigidity adjusting means of the thin film sheet 2 is not limited to these, and a method of forming a groove or a through hole as described in the second embodiment may be used.

  For example, when the probe 7E is formed in a corner region where the first array region and the second array region intersect as shown in FIG. As a means for reducing the bending rigidity of the first region in FIG. 30, as shown in FIG. 30, the outside of the corner region (direction close to the multilayer wiring substrate 1) or the inner peripheral side of the corner region (distant from the multilayer wiring substrate 1). The groove 50 or the through hole can be provided in the direction).

  By comprising in this way, the bending rigidity of the area | region around the said corner area | region can be made small.

  On the contrary, as described in the second embodiment, the second array having a wide array interval when the array interval of the probes 7 has a singular point that is wider than the array intervals of the other probes 7. The bending stiffness of the first region between the probes 7F and 7G arranged at intervals is compared with the bending stiffness of the second region between the probes 7A arranged at a second arrangement interval narrower than the second arrangement interval. As a means for relatively reducing the size, the method of reducing the number of constituent members in the first region compared to the constituent members in the second region, and a part of the constituent members in the first region in the second You may use the method of replacing with a member with small bending rigidity compared with the structural member of the location corresponding to an area | region.

  Further, as means for adjusting the bending rigidity of the thin film sheet 2, the method described in the first embodiment, for example, the method of adjusting by the number of constituent members, and the thickness of the thin film sheet 2 described in the second embodiment are adjusted. A combination of methods may be used.

  For example, a dummy member 23A is formed in the second region of the thin film sheet 2 and is a region in the vicinity of the probes 7E and 7F at the arrangement end of the probes 7 arranged at regular intervals of the thin film sheet 2, and the probes 7E, The dummy member 23A is not formed in the region opposite to the direction in which the probes 7 are arranged from 7F, and the groove portion 50 is formed.

  In this case, the difference in bending rigidity between the area around the probes 7E and 7F of the thin film sheet 2 and the area around the probes 7A and 7B can be increased. The bending rigidity of the thin film sheet 2 can be adjusted.

  The method for manufacturing a semiconductor integrated circuit device according to the present invention can be widely applied to, for example, a probe inspection process in a manufacturing process of a semiconductor integrated circuit device.

It is a principal part top view of the lower surface of the probe card which is one embodiment of this invention. It is sectional drawing along the AA line in FIG. It is a top view of the semiconductor chip of the object which carries out a probe test using the probe card which is one embodiment of the present invention. FIG. 4 is a perspective view of pads formed on the semiconductor chip shown in FIG. 3. FIG. 5 is a cross-sectional view of main parts showing a method for connecting the semiconductor chip shown in FIG. 4 to a liquid crystal panel. It is a principal part top view of the thin film sheet which forms the probe card which is one embodiment of this invention. It is sectional drawing along the BB line in FIG. It is sectional drawing along CC line in FIG. It is sectional drawing which expands and shows the principal part of the thin film sheet which forms the probe card which is one embodiment of this invention. It is a top view of the semiconductor chip of the object which carries out a probe test using the probe card which is one embodiment of the present invention. It is a principal part top view of the thin film sheet which forms the probe card which is one embodiment of this invention. It is a principal part top view which showed the position which a probe contacts on the bump electrode provided in the semiconductor chip of the object which carries out a probe test | inspection using the probe card which is one embodiment of this invention. It is a principal part top view of the thin film sheet which forms the probe card which is one embodiment of this invention. It is a principal part top view of the thin film sheet which forms the probe card which is one embodiment of this invention. It is sectional drawing along the DD line | wire in FIG. It is sectional drawing along the EE line in FIG. It is principal part sectional drawing explaining the manufacturing process of the thin film sheet which forms the probe card which is one embodiment of this invention. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is principal part sectional drawing in the manufacturing process of the thin film sheet following FIG. It is a principal part top view explaining the structure of the thin film sheet which forms the probe card which is other embodiment of this invention. It is sectional drawing along the FF line in FIG. It is sectional drawing along the GG line in FIG. It is a principal part top view explaining the structure of the thin film sheet which forms the probe card which is other embodiment of this invention. It is a principal part top view explaining the structure of the thin film sheet which forms the probe card which is other embodiment of this invention.

Explanation of symbols

1 Multilayer wiring board (first wiring board)
1a Main surface (first main surface of the wiring board)
1b Main surface (second main surface of the wiring board)
2 Thin film sheet (thin film probe, first sheet)
2a Main surface (first main surface of the sheet)
2b Main surface (second main surface of the sheet)
3 Plunger 4 Holding ring (first fixing jig)
5 Opening 6 Adhesive Ring 7, 7A, 7B, 7C, 7D, 7E, 7F, 7G Probe (Contact Terminal)
8 Pogo seat 9 Pressing tool (Pressing mechanism)
10 chips (chip area)
10a Main surface (first main surface of a semiconductor wafer)
10b Main surface (second main surface of semiconductor wafer)
11, 12 Pad (first electrode)
14, 15 Pixel electrode 16, 18 Glass substrate 17 Liquid crystal layer 21A, 21B, 21C, 21D Metal film 22 Polyimide film 23 Wiring 23A Dummy member 24 Through hole 25 Polyimide film 26 Wiring 26A Dummy member 27 Polyimide film 28 Through hole 31 Wafer 32 Silicon oxide film 33 Hole 34 Silicon oxide films 35, 37, 38 Conductive films 42, 43 Conductive film 45 Metal sheet (second fixing jig)
45A contour (third contour)
45B Corner 46, 47 Opening 50 Groove

Claims (5)

(A) providing a semiconductor wafer having a first main surface and a second main surface located on opposite sides along the thickness direction;
(B) forming a semiconductor integrated circuit in each of the plurality of chip regions of the first main surface partitioned of the semiconductor wafer;
(C) forming a plurality of first electrodes electrically connected to the semiconductor integrated circuit in each of the plurality of chip regions;
(D) preparing a probe card having a plurality of contact terminals;
(E) contacting the plurality of contact terminals with the plurality of first electrodes to perform an electrical inspection of the semiconductor integrated circuit,
The probe card is
A first wiring board having a first main surface and a second main surface located on opposite sides along the thickness direction, wherein the first wiring is formed;
A first sheet having a first main surface and a second main surface located on opposite sides along the thickness direction;
A fixing jig for fixing the first sheet to the first wiring board in a state where the first main surface of the first sheet and the second main surface of the first wiring board are opposed to each other;
A pressing mechanism disposed on the first main surface side of the first sheet and pressing the first sheet in the direction of the semiconductor wafer;
The first sheet is
The plurality of contact terminals disposed on the second main surface of the first sheet;
A second wiring electrically connected to the first wiring of the first wiring board and electrically connected to the plurality of contact terminals;
In the step of performing the electrical inspection, the pressing mechanism moves the region of the first sheet where the plurality of contact terminals are arranged from the first main surface side of the first sheet to the first of the semiconductor wafer. A pressing portion for bringing the plurality of contact terminals into contact with the plurality of first electrodes by pressing in a principal surface direction;
On the second main surface of the first sheet,
A first arrangement region in which the plurality of contact terminals are arranged along a first arrangement direction;
A second arrangement region in which the plurality of contact terminals are arranged along a second arrangement direction intersecting the first arrangement direction;
The first arrangement area and the second arrangement area are arranged to have a corner area intersecting,
The surface distribution of the bending rigidity of the first sheet is
Among the plurality of contact terminals arranged in the first arrangement region, the bending rigidity of the first region around the contact terminals at the end of the arrangement is the plurality of arrangements arranged in the first arrangement region. A method of manufacturing a semiconductor integrated circuit device, wherein the bending rigidity of the second region between the contact terminals is small. (A) providing a semiconductor wafer having a first main surface and a second main surface located on opposite sides along the thickness direction;
(B) forming a semiconductor integrated circuit in each of the plurality of chip regions of the first main surface partitioned of the semiconductor wafer;
(C) forming a plurality of first electrodes electrically connected to the semiconductor integrated circuit in each of the plurality of chip regions;
(D) preparing a probe card having a plurality of contact terminals;
(E) contacting the plurality of contact terminals with the plurality of first electrodes to perform an electrical inspection of the semiconductor integrated circuit,
The probe card is
A first wiring board having a first main surface and a second main surface located on opposite sides along the thickness direction, wherein the first wiring is formed;
A first sheet having a first main surface and a second main surface located on opposite sides along the thickness direction;
A fixing jig for fixing the first sheet to the first wiring board in a state where the first main surface of the first sheet and the second main surface of the first wiring board are opposed to each other;
A pressing mechanism disposed on the first main surface side of the first sheet and pressing the first sheet toward the semiconductor wafer;
The first sheet is
The plurality of contact terminals disposed on the second main surface of the first sheet;
A second wiring electrically connected to the first wiring of the first wiring board and electrically connected to the plurality of contact terminals;
In the step of performing the electrical inspection, the pressing mechanism moves the region of the first sheet where the plurality of contact terminals are arranged from the first main surface side of the first sheet to the first of the semiconductor wafer. A pressing portion for bringing the plurality of contact terminals into contact with the plurality of first electrodes by pressing in a principal surface direction;
On the second main surface of the first sheet,
A plurality of first contact terminals arranged at first arrangement intervals along the first arrangement direction;
Second contact terminals arranged along the first arrangement direction so as to be adjacent to the first contact terminals at the arrangement end of the first contact terminals at a second arrangement interval wider than the first arrangement interval. And arranged to have
The surface distribution of the bending rigidity of the first sheet is
The bending rigidity of the first region between the first contact terminals and the second contact terminals arranged at the second arrangement interval is between the plurality of first contact terminals arranged at the first arrangement interval. A method for manufacturing a semiconductor integrated circuit device, wherein the bending rigidity of the second region is smaller than that of the second region. In the manufacturing method of the semiconductor integrated circuit device according to claim 1 or 2,
Means for reducing the bending stiffness of the first region compared to the bending stiffness of the second region is such that the constituent members constituting the first region are less than the constituent members constituting the second region. The method for manufacturing a semiconductor integrated circuit device is characterized in that the constituent members of the first sheet are partially reduced. In the manufacturing method of the semiconductor integrated circuit device according to claim 1 or 2,
The means for reducing the bending stiffness of the first region compared to the bending stiffness of the second region is such that the thickness of the first region is smaller than the thickness of the second region. A method of manufacturing a semiconductor integrated circuit device, characterized in that a part of the semiconductor integrated circuit device is thinned. In the manufacturing method of the semiconductor integrated circuit device according to claim 1 or 2,
The means for reducing the bending rigidity of the first region as compared with the bending rigidity of the second region has a thickness of a region adjacent to the first region along a direction intersecting the first arrangement direction. A method of manufacturing a semiconductor integrated circuit device, wherein the first sheet is partially thinned so as to be thinner than the thickness of two regions.

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