JP2008007765A - Manufacturing method of light-emitting material, light-emitting element, and light-emitting device and electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a light-emitting material having high purity, and to provide a light-emitting element having high luminance by using the light-emitting material. <P>SOLUTION: The method for manufacturing the light-emitting material includes the steps of: forming a first layer containing a luminescence center element in a container; forming a second layer containing a host material in the container so as to cover the first layer; and performing heat treatment to the first layer and the second layer in the container, whereby the second layer is doped with the luminescence center element. The heat treatment is carried out at a temperature of not less than 700°C and not higher than 1,500°C. The host material is exemplified by zinc sulfide, and the luminescence center element is copper, chloride, manganese or the like. The light-emitting element having high luminescence has a light-emitting layer comprising the granular light-emitting material dispersed in a binder between a pair of electrodes. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a light emitting material. In addition, the present invention relates to a light emitting element utilizing electroluminescence. Further, the present invention relates to a light-emitting device and an electronic device each having a light-emitting element.

  In recent years, display devices in televisions, mobile phones, digital cameras, and the like have been demanded to be flat and thin display devices, and display devices using self-luminous light-emitting elements as display devices to satisfy these requirements. Is attracting attention. One of self-luminous light-emitting elements is a light-emitting element that uses electroluminescence. This light-emitting element is formed by sandwiching a light-emitting material between a pair of electrodes and applying a voltage to the light-emitting element. Light emission can be obtained.

  Such a self-luminous light emitting element has advantages such as higher pixel visibility than a liquid crystal display and no need for a backlight, and is considered to be suitable as a flat panel display element. In addition, it is a great advantage that such a light-emitting element can be manufactured to be thin and light. Another feature is that the response speed is very fast.

  Further, since such a self-luminous light emitting element can be formed into a film shape, surface emission can be easily obtained by forming a large-area element. This is a feature that is difficult to obtain with a point light source typified by an incandescent bulb or LED, or a line light source typified by a fluorescent lamp, and therefore has a high utility value as a surface light source applicable to illumination or the like.

  A light-emitting element using electroluminescence is distinguished depending on whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element and the latter is called an inorganic EL element.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The former has a light-emitting layer in which particles of a light-emitting material are dispersed in a binder, and the latter has a light-emitting layer made of a thin film of the light-emitting material. It is common in the point that requires. Note that the obtained light emission mechanism includes donor-acceptor recombination light emission using a donor level and an acceptor level, and localized light emission using inner-shell electron transition of a metal ion. In general, the dispersion-type inorganic EL element often has donor-acceptor recombination light emission, and the thin-film inorganic EL element often has localized light emission.

A light-emitting material used for such an inorganic EL element is obtained by adding a light-emitting central element such as manganese or copper to a base material such as zinc sulfide. For example, Patent Document 1 discloses a manufacturing method thereof. Further, as a method for producing a light emitting material having white light emission, for example, there is Patent Document 2. In these manufacturing methods, the luminescent material is manufactured by mixing the base material and the material containing the luminescent center element and firing, but it is difficult to control the concentration of the material containing the luminescent center element, and the concentration is increased. Has a problem that the amount of by-products increases and the purity of the light-emitting material decreases.
JP 2004-99881 A JP 2004-244636 A

  In view of the above problems, an object of the present invention is to provide a method for producing a high-purity luminescent material. Another object is to provide a light-emitting element with high luminance. It is another object to provide a high-luminance light-emitting device and electronic device.

According to one embodiment of the present invention, a first layer including a luminescent center element is formed in a container, a second layer including a base material is formed so as to cover the first layer, and the first layer in the container is formed. A method for producing a luminescent material, characterized in that a luminescent center element is added to a second layer by subjecting the layer and the second layer to heat treatment.

In the above structure, the heat treatment is preferably performed at a temperature of 700 ° C. to 1500 ° C. Further, the heat treatment is preferably performed in a sulfide gas atmosphere.

In the above structure, the first luminescent center element is one or more of copper, silver, gold, manganese, terbium, europium, thulium, cerium, praseodymium, samarium, erbium, aluminum, chlorine, or fluorine. Preferably there is.

In the above structure, the base material is zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, Zinc telluride, barium sulfide-aluminum, calcium sulfide-gallium, strontium sulfide-gallium, or barium sulfide-gallium is preferred.

In the above structure, the second layer may further include an emission center element different from the emission center element included in the first layer. In particular, it is possible to obtain a light emitting element that emits white light because the emission color from the emission center element contained in the first layer and the emission color from the emission center element contained in the second layer have a complementary relationship. it can.

One embodiment of the present invention includes a light-emitting layer between a pair of electrodes, the light-emitting layer includes a particulate light-emitting material dispersed in a binder, and the light-emitting material includes a first light-emitting central element and a base material. And the concentration of the first luminescent center element contained in each particle dispersed in the binder is different for each particle.

In the above structure, an insulating layer may be further provided between the pair of electrodes. The insulating layer contains one or more of yttrium oxide, titanium oxide, aluminum oxide, hafnium oxide, tantalum oxide, silicon oxide, barium titanate, strontium titanate, lead titanate, silicon nitride, or zirconium oxide. Is preferred.

In the above structure, the first emission center element may be any one of copper, silver, gold, manganese, terbium, europium, thulium, cerium, praseodymium, samarium, erbium, aluminum, chlorine, or fluorine. preferable.

In the above structure, the light-emitting material may include a second emission center element. The second luminescent center element is any one of copper, silver, gold, manganese, terbium, europium, thulium, cerium, praseodymium, samarium, erbium, aluminum, chlorine, or fluorine. Are preferably different.

In the above structure, the base material is zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, Zinc telluride, barium sulfide-aluminum, calcium sulfide-gallium, strontium sulfide-gallium, or barium sulfide-gallium is preferred.

  The present invention also includes a light emitting device having the above-described light emitting element. That is, one aspect of the present invention is a light-emitting device including a light-emitting element and a control unit that controls light emission of the light-emitting element. Note that a light-emitting device in this specification includes an image display device, a light-emitting device, or a light source (including a lighting device). Also, a panel in which a light emitting element is formed and a connector, for example, a FPC (Flexible Printed Circuit) or TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package) tape, a printed wiring board on the end of a TAB tape or TCP The light-emitting device also includes a module provided with an IC or an IC (integrated circuit) directly mounted on a light-emitting element by a COG (Chip On Glass) method.

  An electronic device using the light-emitting element of the present invention for the display portion is also included in the category of the present invention. Therefore, an electronic device according to the present invention includes a display portion, and the display portion includes the above-described light emitting element and a control unit that controls light emission of the light emitting element.

  A light emitting material with high purity can be obtained by the method for producing a light emitting material of the present invention.

  In addition, by using the light emitting material according to the manufacturing method of the present invention, a light emitting element with high luminance can be obtained.

  Further, since the light-emitting device of the present invention includes a light-emitting element with high luminance, high luminance can be obtained. In addition, a light-emitting device and an electronic device with reduced power consumption can be obtained.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below.

(Embodiment 1)
In this embodiment mode, a method for manufacturing a light-emitting material according to the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view of a container 100 in which a first layer 111 and a second layer 112 are laminated. This embodiment is a method for manufacturing a light-emitting material in which a material in a container is fired by heat-treating the container 100, and will be described below.

First, a predetermined amount of an emission center material such as manganese is weighed and accommodated in the container 100 to form the first layer 111. A predetermined amount of a base material such as zinc sulfide is weighed on the first layer 111 and accommodated in the container 100 to form the second layer 112. Note that the material may be accommodated while being flattened by applying appropriate vibration.

  As a material of the container 100, materials such as quartz, alumina, and boron nitride can be used, and various shapes can be used. For example, a hemispherical shape or a cylindrical shape can be used. .

As a material forming the first layer 111, a material containing an emission center element (hereinafter referred to as an emission center material) can be used. The luminescent center element is copper, silver, gold, manganese, terbium, europium, thulium, cerium, praseodymium, samarium, erbium, aluminum, chlorine, fluorine, etc., and the luminescent center material is a simple substance or a compound. Can do. When the emission center material is a compound, copper sulfide, copper chloride, copper fluoride, copper sulfate, silver sulfide, silver chloride, silver fluoride, manganese sulfide, manganese carbonate, terbium chloride, terbium fluoride, europium oxide, europium chloride , Europium fluoride, thulium oxide, thulium fluoride (TmF ₃ ), praseodymium chloride, praseodymium fluoride, samarium oxide, samarium chloride, samarium fluoride, cerium oxide, cerium chloride, cerium fluoride, erbium oxide, erbium chloride, fluorine Erbium iodide, aluminum sulfide, aluminum chloride, or the like can be used.

As a material for forming the second layer 112, a base material can be used. As the base material, sulfide, oxide, or nitride can be used. As the sulfide, for example, zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, or barium sulfide can be used. As the oxide, for example, zinc oxide or yttrium oxide can be used. As the nitride, for example, aluminum nitride, gallium nitride, indium nitride, or the like can be used. Furthermore, zinc selenide or zinc telluride can also be used, and may be a ternary compound such as barium sulfide-aluminum, calcium sulfide-gallium, strontium sulfide-gallium, or barium sulfide-gallium.

Note that after the luminescent center material is accommodated in the container 100 and the first layer 111 is formed, heat treatment is performed, the luminescent center material is melted, cooled, and solidified, and then the base material is accommodated. Two layers can also be formed.

Next, the container 100 is heated and the material in the container is baked. Firing may be performed in the air, or may be performed in an N ₂ atmosphere, an Ar atmosphere, or a sulfide gas atmosphere. As the sulfide gas, for example, hydrogen sulfide, carbon disulfide, sulfur vapor, mercaptans such as ethyl mercaptan, methyl mercaptan, dimethyl sulfur, or diethyl sulfur can be used. Of these, hydrogen sulfide gas is preferred. This is because a part of hydrogen sulfide is decomposed to generate sulfur and hydrogen, so that sulfur deficiency in the light emitting material can be prevented, and at the same time, a reduction effect of hydrogen can be expected. Moreover, after putting a container in a quartz tube and exhausting it so that it may become the pressure of 1 * 10 < ^-3 > Pa or less, a sealed tube is performed, the sealed quartz tube can be heated and a material can be baked. . In addition, 700-1500 degreeC is preferable for a calcination temperature.

  By firing, a solid phase reaction between the base material and the luminescent center material occurs, and a luminescent material in which the luminescent center element is added to the base material is obtained. In a general manufacturing method in which a base material and a luminescent center material are mixed, not only the solid phase reaction between the base material and the luminescent center material but also the luminescent center materials cause a solid phase reaction between them, so that This produces a product. This is particularly noticeable when the mixing ratio of the luminescent center material is high. This is because when the solid-phase reaction occurs, the unreacted luminescent center material is reached even though the solid solubility of the base material has reached its limit. This is thought to occur because of the existence of Such a by-product lowers the purity of the light-emitting material and causes concentration quenching when used in a light-emitting element. On the other hand, in the manufacturing method according to the present embodiment, the base material and the luminescent center material are separated. By heating, the luminescent center material that has become vapor diffuses into the base material, but the luminescent center material that is a gas has a high diffusion coefficient and does not partially increase the concentration of the luminescent center material. Further, even when the luminescent center material does not become vapor, a solid-phase reaction proceeds from the interface between the base material and the luminescent center material, and the luminescent center element diffuses into the base material, but even if the solid solubility of the base material is reached. In addition, since there is no unreacted luminescent center material in the base material, the reaction of the by-product is difficult to proceed.

A luminescent material to which the luminescent center element contained in the first layer is added is obtained for the second layer 112 after baking. According to the method for manufacturing a luminescent material according to the present embodiment, a luminescent material having a luminescent center element concentration distribution or a homogeneous luminescent material can be obtained by adjusting only the temperature and time without adjusting the amount of the luminescent center material. It is done. Note that in the case of a luminescent material having a concentration distribution of the luminescent center element, it is possible to obtain a homogeneous luminescent material by pulverizing, stirring, and firing again the obtained luminescent material. Further, since the base material and the luminescent center material are separated, a by-product is hardly formed, and a light-emitting material with high purity can be obtained.

(Embodiment 2)
In this embodiment mode, a method for manufacturing a light-emitting material according to the present invention will be described with reference to FIGS. FIG. 2 is a cross-sectional view of the container 100 in which the first layer 121 and the second layer 122 are laminated. This embodiment is a method for manufacturing a light-emitting material in which a material in a container is fired by heat-treating the container 100, and will be described below.

First, a predetermined amount of a luminescent center material such as manganese is weighed and accommodated in the container 100 to form the first layer 121. A predetermined amount of a base material such as zinc sulfide is weighed on the first layer 121 and accommodated in the container 100 to form the second layer 122. Note that the material may be accommodated while being flattened by applying appropriate vibration.

As the base material forming the second layer 122, the materials described in Embodiment 1 can be used. The luminescent center material constituting the first layer 121 is a mixture of two or more different luminescent center materials. As the luminescent center material, the materials described in Embodiment Mode 1 can be used, and a single substance or a mixture of these compounds can be used. For example, when Mn and Tb are added as the luminescent center element, MnS and TbF ₃ can be weighed, and a mixture of these can be formed with the first layer. Note that the first layer can also be formed by stacking the luminescent center material without using the mixture.

Next, the container 100 is heated and the material in the container is baked. Firing may be performed in the air, or may be performed in an N ₂ atmosphere, an Ar atmosphere, or a sulfide gas atmosphere. As the sulfide gas, for example, hydrogen sulfide, carbon disulfide, sulfur vapor, mercaptans such as ethyl mercaptan, methyl mercaptan, dimethyl sulfur, or diethyl sulfur can be used. Of these, hydrogen sulfide gas is preferred. This is because a part of hydrogen sulfide is decomposed to generate sulfur and hydrogen, so that sulfur deficiency in the light emitting material can be prevented, and at the same time, a reduction effect of hydrogen can be expected. Moreover, after putting a container in a quartz tube and exhausting so that it may become a pressure of 1 * 10 < ^-3 > Pa or less, a sealed tube is performed and it can also bake using this. In addition, 700-1500 degreeC is preferable for a calcination temperature.

After firing, a light-emitting material to which a plurality of luminescent center elements are added is obtained for the second layer 122. According to the method for manufacturing a light emitting material according to the present embodiment, a light emitting material having a plurality of wavelength peaks can be obtained by adjusting only the temperature and time without adjusting the amount of the light emitting center material. Therefore, it is possible to easily obtain white light emission. In the case of a luminescent material having a concentration distribution of the luminescent center element, it is possible to obtain a homogeneous luminescent material by pulverizing and stirring the obtained luminescent material and firing again. Further, since the base material and the luminescent center material are separated, a by-product is hardly formed, and a light-emitting material with high purity can be obtained.

  Note that this embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 3)
In this embodiment mode, a method for manufacturing a light-emitting material according to the present invention will be described with reference to FIGS. FIG. 3 is a cross-sectional view of the container 100 in which the first layer 131 and the second layer 132 are laminated. This embodiment is a method for manufacturing a light-emitting material in which a material in a container is fired by heat-treating the container 100, and will be described below.

First, a predetermined amount of a luminescent center material such as manganese is weighed and accommodated in the container 100 to form the first layer 131. A predetermined amount of a base material such as zinc sulfide is weighed on the first layer 131 and accommodated in the container 100 to form the second layer 132. Note that the material may be accommodated while being flattened by applying appropriate vibration.

  As the luminescent center material constituting the container 100 and the first layer 131, the materials described in Embodiment Mode 1 can be used. The second layer 132 is a light emitting material. As the light-emitting material used in this embodiment, the light-emitting material manufactured in Embodiments 1 and 2 can be used, and further, a light-emitting material synthesized using a general solid-phase reaction can be used. For example, ZnS to which Mn is added (ZnS: Mn), ZnS to which Tb is added (ZnS: Tb), ZnS to which Cu or Cl is added (ZnS: Cu, Cl), or the like can be used.

Next, the container 100 is heated and the material in the container is baked. Firing may be performed in the air, or may be performed in an N ₂ atmosphere, an Ar atmosphere, or a sulfide gas atmosphere. As the sulfide gas, for example, hydrogen sulfide, carbon disulfide, sulfur vapor, mercaptans such as ethyl mercaptan, methyl mercaptan, dimethyl sulfur, or diethyl sulfur can be used. Of these, hydrogen sulfide gas is preferred. This is because a part of hydrogen sulfide is decomposed to generate sulfur and hydrogen, so that sulfur deficiency in the light emitting material can be prevented, and at the same time, a reduction effect of hydrogen can be expected. Moreover, after putting a container in a quartz tube and exhausting so that it may become a pressure of 1 * 10 < ^-3 > Pa or less, a sealed tube is performed and it can also bake using this. In addition, 700-1500 degreeC is preferable for a calcination temperature.

After firing, a light-emitting material to which a plurality of luminescent center elements are added is obtained for the second layer 132. According to the method for manufacturing a light emitting material according to the present embodiment, a light emitting material having a plurality of wavelength peaks can be obtained by adjusting only the temperature and time without adjusting the amount of the light emitting center material. Therefore, it is possible to easily obtain white light emission. In the case of a luminescent material having a concentration distribution of the luminescent center element, it is possible to obtain a homogeneous luminescent material by pulverizing and stirring the obtained luminescent material and firing again. Further, since the base material and the luminescent center material are separated, a by-product is hardly formed, and a light-emitting material with high purity can be obtained.

  Note that this embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 4)
In this embodiment mode, a method for manufacturing a light-emitting material according to the present invention will be described with reference to FIGS. FIG. 4 is a cross-sectional view of the container 100 in which the first layer 141 and the second layer 142 are laminated. This embodiment is a method for manufacturing a light-emitting material in which a material in a container is fired by heat-treating the container 100, and will be described below.

First, a predetermined amount of an emission center material such as manganese is weighed and accommodated in the container 100 to form the first layer 141. A predetermined amount of a base material such as zinc sulfide is weighed on the first layer 141 and accommodated in the container 100 to form the second layer 142. Note that the material may be accommodated while being flattened by applying appropriate vibration.

The luminescent center material constituting the first layer 141 is a mixture of luminescent center materials containing two or more different luminescent center elements. As the luminescent center material, the materials described in Embodiment Mode 1 can be used, and a single substance or a mixture of these compounds can be used. For example, when Mn and Tb are added as the luminescent center element, MnS and TbF ₃ can be weighed and the first layer can be formed using a mixture thereof. Note that the first layer can also be formed by stacking the luminescent center material without using the mixture. The second layer 142 is a light emitting material. As the light-emitting material used in this embodiment, the light-emitting material manufactured in Embodiments 1 and 2 can be used, and further, a light-emitting material synthesized using a general solid-phase reaction can be used. For example, ZnS to which Mn is added (ZnS: Mn), ZnS to which Tb is added (ZnS: Tb), ZnS to which Cu or Cl is added (ZnS: Cu, Cl), or the like can be used.

Next, the container 100 is heated and the material in the container is baked. Firing may be performed in the air, or may be performed in an N ₂ atmosphere, an Ar atmosphere, or a sulfide gas atmosphere. As the sulfide gas, for example, hydrogen sulfide, carbon disulfide, sulfur vapor, mercaptans such as ethyl mercaptan, methyl mercaptan, dimethyl sulfur, or diethyl sulfur can be used. Of these, hydrogen sulfide gas is preferred. This is because a part of hydrogen sulfide is decomposed to generate sulfur and hydrogen, so that sulfur deficiency in the light emitting material can be prevented, and at the same time, a reduction effect of hydrogen can be expected. Moreover, after putting a container in a quartz tube and exhausting so that it may become a pressure of 1 * 10 < ^-3 > Pa or less, a sealed tube is performed and it can also bake using this. In addition, 700-1500 degreeC is preferable for a calcination temperature.

After firing, a light-emitting material to which a plurality of light-emitting center elements are added is obtained for the second layer 142. According to the method for manufacturing a light emitting material according to the present embodiment, a light emitting material having a plurality of wavelength peaks can be obtained by adjusting only the temperature and time without adjusting the amount of the light emitting center material. Therefore, it is possible to easily obtain white light emission. In the case of a luminescent material having a concentration distribution of the luminescent center element, it is possible to obtain a homogeneous luminescent material by pulverizing and stirring the obtained luminescent material and firing again. Further, since the base material and the luminescent center material are separated, a by-product is hardly formed, and a light-emitting material with high purity can be obtained.

  Note that this embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 5)
In this embodiment mode, a distributed light-emitting element according to the present invention will be described with reference to FIGS.

  In the light-emitting element described in this embodiment, the first electrode 201, the second electrode 204, the insulating layer 203 in contact with the second electrode, the first electrode 201, and the insulating layer 203 are formed over the substrate 200. The element structure has the light emitting layer 202 between the two. In the light-emitting element described in this embodiment, light emission is obtained from the light-emitting layer 202 by applying a voltage between the first electrode 201 and the second electrode 204. Can work. Note that in this specification, an EL layer refers to a layer formed between a pair of electrodes.

The light-emitting layer 202 is a film in which the light-emitting material described in any of Embodiments 1 to 4 is dispersed in a binder. The binder is a substance for fixing the particulate light emitting material in a dispersed state and maintaining the shape as the light emitting layer. The light emitting material is uniformly dispersed and fixed in the light emitting layer by the binder. Note that when particles having a desired size are not sufficiently obtained by the method for manufacturing a light-emitting material, the particles may be pulverized with a mortar and processed into particles having a predetermined size. Moreover, when the luminescent material produced using the manufacturing method of the present invention is processed into particles, the concentration of the luminescent center element contained in each particle is different. This is because when the luminescent center element diffuses into the layer containing the host material due to heating, the concentration of the luminescent center element that diffuses to a region near the layer containing the luminescent center element in the layer containing the host material increases. This is because the concentration diffused in the far region is low. Therefore, when processed into particles, the concentration is different for each particle. The concentration ratio for each particle can be adjusted simply by determining the heating temperature and time conditions. In general, when the concentration of the luminescent center element in the particles becomes excessive, concentration quenching occurs and the luminance decreases. At this time, particles having a high concentration of the emission center element have high conductivity, and particles having a low concentration can emit light with high luminance. Therefore, by applying the present invention to a dispersed light-emitting element, particles having different concentrations can be mixed, and a light-emitting element with high luminance and low power consumption can be obtained.

As a method for forming the light emitting layer, a droplet discharge method capable of selectively forming the light emitting layer, a printing method such as screen printing or offset printing, a coating method such as a spin coating method, a dipping method, or a dispenser method is used. Can do. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. In the light emitting layer containing the light emitting material and the binder, the ratio of the light emitting material is preferably 50 wt% or more and 80 wt% or less.

The binder that can be used in this embodiment is an insulating material, and an organic material, an inorganic material, or a mixed material of an organic material and an inorganic material can be used. As the organic material, a polymer having a relatively high dielectric constant, such as cyanoethyl cellulose resin, or a resin such as polyethylene, polypropylene, polystyrene resin, silicone resin, epoxy resin, or vinylidene fluoride can be used. Alternatively, a heat-resistant polymer such as aromatic polyamide, polybenzimidazole, or siloxane resin may be used. Note that a siloxane resin is a resin including a Si—O—Si bond. Moreover, resin materials, such as vinyl resins, such as polyvinyl alcohol and polyvinyl butyral, a phenol resin, a novolak resin, an acrylic resin, a melamine resin, a urethane resin, or an oxazole resin (polybenzoxazole), can also be used. On the other hand, as inorganic materials, silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide or aluminum oxide, titanium oxide, barium titanate, strontium titanate, lead titanate, It can be made of a material selected from substances including potassium niobate, lead niobate, tantalum oxide, barium tantalate, lithium tantalate, yttrium oxide, zirconium oxide, zinc sulfide, or other inorganic materials. Note that an organic material added with an inorganic material having a high dielectric constant may be used. Thereby, the dielectric constant of the light emitting layer can be controlled, and a larger dielectric constant can be obtained.

In the manufacturing process of the light-emitting layer 202, the light-emitting material is dispersed in a solution containing a binder. As the solvent of the solution containing the binder that can be used in this embodiment mode, the binder material is dissolved to form a light-emitting layer. A solvent capable of preparing a solution having a viscosity suitable for a desired film thickness (various wet processes) and a desired film thickness may be selected as appropriate. For example, when a siloxane resin is used as the binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (PGMEA), 3-methoxy-3-methyl-1-butanol (MMB), or the like can be used as the organic solvent.

The insulating layer 203 in FIG. 5 is not particularly limited, but preferably has a high withstand voltage and a dense film quality, and further preferably has a high dielectric constant. For example, yttrium oxide, titanium oxide, aluminum oxide, hafnium oxide, tantalum oxide, barium titanate, strontium titanate, lead titanate, silicon nitride, zirconium oxide, silicon oxide, etc., a mixed film thereof, or two or more kinds of them A laminated film can be used. These insulating films can be formed by sputtering, vapor deposition, CVD, or the like. The insulating layer may be formed by dispersing particles of these insulating materials in a binder. The binder material for forming the insulating layer can be formed by using the same material and method as the binder contained in the light emitting layer. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm.

  Since the light-emitting element of the present invention uses a light-emitting material with high purity, a light-emitting element with low concentration quenching and high light emission efficiency is possible. Therefore, a light-emitting element with high luminance can be obtained. That is, a light-emitting element with high luminance obtained when a certain voltage is applied can be obtained.

  Note that this embodiment can be combined with any of the other embodiments as appropriate.

(Embodiment 6)
In this embodiment, a display device as one embodiment of a light-emitting device will be described with reference to FIGS.

FIG. 6 is a schematic configuration diagram showing a main part of the display device. The substrate 410 is provided with a first electrode 416 and a second electrode 418 extending in a direction crossing the electrode. At least at the intersection between the first electrode 416 and the second electrode 418, a light-emitting layer similar to that described in Embodiment 5 is provided, so that a light-emitting element is formed. In the light-emitting device in FIG. 6, a plurality of first electrodes 416 and second electrodes 418 are arranged, light-emitting elements to be pixels are arranged in a matrix, and a display portion 414 is formed. The display unit 414 can display moving images and still images by controlling the potentials of the first electrode 416 and the second electrode 418 to control light emission and non-light emission of each light emitting element.

In the light emitting device, a signal for displaying an image is applied to each of the first electrode 416 extending in one direction of the substrate 410 and the second electrode 418 intersecting with the first electrode 416 so that the light emitting element emits light and does not emit light. select. That is, the pixel is driven by a simple matrix display device which is exclusively driven by a signal supplied from an external circuit. Since such a display device has a simple configuration, it can be easily manufactured even when the area is increased.

In the above, aluminum, titanium, tantalum, or the like is used for the first electrode 416, and indium oxide, indium oxide-tin oxide (ITO), indium oxide-zinc oxide (IZO), or zinc oxide is used for the second electrode 418. For example, a display device in which the display portion 414 is formed on the counter substrate 412 side can be obtained. In this case, if a thin oxide film is formed on the surface of the first electrode 416, a barrier layer is formed, and light emission efficiency can be increased by a carrier blocking effect. When indium oxide, indium oxide-tin oxide (ITO), indium oxide-zinc oxide (IZO), or zinc oxide is used as the first electrode 416 and aluminum, titanium, tantalum, or the like is used as the second electrode 418, A display device in which the display portion 414 is formed on the substrate 410 side can be provided. In addition, when both the first electrode 416 and the second electrode 418 are formed of transparent electrodes, a double-sided display device can be obtained.

Note that the counter substrate 412 may be provided as necessary, and may be used as a protective member by being provided in accordance with the position of the display portion 414. This can be substituted by applying a resin film or resin material without using a plate-like hard material. The first electrode 416 and the second electrode 418 are drawn out to an end portion of the substrate 410 to form a terminal connected to an external circuit. That is, the first electrode 416 and the second electrode 418 form contacts with the flexible wiring substrates 420 and 422 at the end of the substrate 410. Examples of the external circuit include a power supply circuit, a tuner circuit, and the like in addition to a controller circuit that controls a video signal.

FIG. 7 is a partially enlarged view showing the configuration of the display unit 414. A partition layer 424 is formed on a side end portion of the first electrode 416 formed over the substrate 410. An EL layer 426 is formed on at least the exposed surface of the first electrode 416. The second electrode 418 is provided over the EL layer 426. The second electrode 418 intersects with the first electrode 416 and thus extends over the partition wall layer 424. The partition layer 424 is formed using an insulating material so that a short circuit does not occur between the first electrode 416 and the second electrode 418. In a portion where the partition layer 424 covers the end portion of the first electrode 416, a side end portion of the partition layer 424 is given a gradient so that a step is not steep so as to have a so-called tapered shape. When the partition layer 424 has such a shape, coverage with the EL layer 426 and the second electrode 418 is improved, and defects such as cracks and tears can be eliminated.

FIG. 8 is a plan view of the display portion 414 and shows the arrangement of the first electrode 416, the second electrode 418, the partition layer 424, and the EL layer 426. The auxiliary electrode 428 is preferably provided in order to reduce resistance loss when the second electrode 418 is formed using an oxide transparent conductive film such as indium tin oxide or zinc oxide. In this case, the auxiliary electrode 428 is preferably formed using a high melting point metal such as titanium, tungsten, chromium, or tantalum, or a combination of a high melting point metal and a low resistance metal such as aluminum or silver.

8A and 9B, cross-sectional views taken along lines AB and CD are shown in FIGS. FIG. 9A is a cross-sectional view in which the first electrodes 416 are arranged, and FIG. 9B is a cross-sectional view in which the second electrodes 418 are arranged. An EL layer 426 is formed at the intersection of the first electrode 416 and the second electrode 418, and a light-emitting element is formed there. The auxiliary electrode 428 illustrated in FIG. 9B is provided over the partition layer 424 so as to be in contact with the second electrode 418. By providing the auxiliary electrode 428 over the partition layer 424, a light-emitting element formed at the intersection of the first electrode 416 and the second electrode 418 is not shielded, so that the emitted light can be used effectively. Can do. Further, the auxiliary electrode 428 can be prevented from being short-circuited with the first electrode 416.

FIG. 9 shows an example in which the color conversion layer 430 is provided on the counter substrate 412. The color conversion layer 430 is for changing the wavelength of light emitted from the EL layer 426 to change the emission color. In this case, light emitted from the EL layer 426 is preferably blue or ultraviolet light with high energy. When the color conversion layer 430 is arranged to convert red, green, and blue, a display device that performs RGB color display can be obtained. Further, the color conversion layer 430 can be replaced with a colored layer (color filter). In that case, the EL layer 426 may be configured to emit white light. The filler 432 fixes the substrate 410 and the counter substrate 412, and may be provided as appropriate.

Further, another structure of the display portion 414 is shown in FIG. In the structure of FIG. 10, the end portion of the first electrode 952 is covered with an insulating layer 953. A partition layer 954 is provided over the insulating layer 953. The side wall of the partition wall layer 954 has an inclination such that the distance between one side wall and the other side wall becomes narrower as it approaches the substrate surface. That is, the cross section in the short side direction of the partition wall layer 954 is trapezoidal, and the bottom side (side in contact with the insulating layer 953) is shorter than the top side (side not in contact with the insulating layer 953). In this manner, by providing the partition layer 954, the EL layer 955 and the second electrode 956 can be formed in a self-aligned manner using the partition layer 954.

  Since the display device of this embodiment has high luminance obtained when a certain voltage is applied, power consumption can be reduced.

(Embodiment 7)
In this embodiment, an active light-emitting device in which driving of a light-emitting element manufactured by applying the present invention to a pixel portion is controlled with a transistor will be described with reference to FIGS. 11A is a top view illustrating the light-emitting device, and FIG. 11B is a cross-sectional view taken along lines AA ′ and BB ′ in FIG. 11A. Reference numeral 601 indicated by a dotted line denotes a driving circuit portion (source side driving circuit), 602 denotes a pixel portion, and 603 denotes a driving circuit portion (gate side driving circuit). Reference numeral 604 denotes a sealing substrate, reference numeral 605 denotes a sealing material, and the inside surrounded by the sealing material 605 is a space 607.

  Note that the routing wiring 608 is a wiring for transmitting a signal input to the source side driving circuit 601 and the gate side driving circuit 603, and a video signal, a clock signal, an FPC (flexible printed circuit) 609 serving as an external input terminal, Receives start signal, reset signal, etc. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.

  Next, a cross-sectional structure is described with reference to FIG. A driver circuit portion and a pixel portion are formed over the element substrate 610. Here, a source-side driver circuit 601 that is a driver circuit portion and one pixel in the pixel portion 602 are illustrated.

  Note that the source side driver circuit 601 is a CMOS circuit in which an n-channel TFT 623 and a p-channel TFT 624 are combined. The TFT forming the driving circuit may be formed by various CMOS circuits, PMOS circuits, or NMOS circuits. In this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown. However, this is not always necessary, and the drive circuit can be formed outside the substrate. Note that the structure of the TFT is not particularly limited. A staggered TFT or an inverted staggered TFT may be used. Further, the crystallinity of a semiconductor film used for the TFT is not particularly limited. An amorphous semiconductor film or a crystalline semiconductor film may be used. Further, the semiconductor material is not particularly limited, and an inorganic compound or an organic compound may be used.

  The pixel portion 602 is formed by a plurality of pixels including a switching TFT 611, a current control TFT 612, and a first electrode 613 electrically connected to the drain thereof. Note that an insulator 614 is formed so as to cover an end portion of the first electrode 613. Here, a positive photosensitive acrylic resin film is used.

  In order to improve the coverage, a curved surface having a curvature is formed at the upper end or the lower end of the insulator 614. For example, when positive photosensitive acrylic is used as a material for the insulator 614, it is preferable that only the upper end portion of the insulator 614 has a curved surface with a curvature radius (0.2 μm to 3 μm). As the insulator 614, either a negative type that becomes insoluble in an etchant by light irradiation or a positive type that becomes soluble in an etchant by light irradiation can be used.

  An EL layer 616 and a second electrode 617 are formed over the first electrode 613. At least one of the first electrode 613 and the second electrode 617 has a light-transmitting property, and light emitted from the EL layer 616 can be extracted to the outside.

  The EL layer 616 includes the light-emitting layer described in Embodiment 5.

  Note that various methods can be used for forming the first electrode 613, the EL layer 616, and the second electrode 617. Specifically, chemicals such as resistance heating vapor deposition, vacuum deposition such as electron beam vapor deposition (EB vapor deposition), physical vapor deposition (PVD) such as sputtering, metal organic CVD, hydride transport low pressure CVD, etc. Vapor phase epitaxy (CVD), atomic layer epitaxy (ALE), or the like can be used. In addition, an inkjet method, a spin coating method, or the like can be used. Moreover, you may form using the different film-forming method for each electrode or each layer.

  Further, the sealing substrate 604 is bonded to the element substrate 610 with the sealant 605, whereby the light-emitting element 618 is provided in the space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealant 605. Yes. Note that the space 607 is filled with a filler, and may be filled with a sealant 605 in addition to an inert gas (such as nitrogen or argon).

  Note that an epoxy-based resin is preferably used for the sealant 605. Moreover, it is desirable that these materials are materials that do not transmit moisture and oxygen as much as possible. In addition to a glass substrate or a quartz substrate, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar (registered trademark), polyester, acrylic, or the like is used as a material for the sealing substrate 604. Can do.

  As described above, a light-emitting device having a light-emitting element manufactured by applying the present invention can be obtained.

  The light-emitting device described in this embodiment includes the light-emitting element described in Embodiment 5 so that a light-emitting device with high luminance can be obtained.

  The light-emitting device described in this embodiment is a light-emitting device with low power consumption because luminance obtained when a certain voltage is applied is high.

(Embodiment 8)
In this embodiment, electronic devices each including the light-emitting device described in any of Embodiments 6 to 7 will be described. An electronic device described in this embodiment includes the light-emitting element described in Embodiment 5. Thus, an electronic device with reduced power consumption can be provided because the light-emitting element has high luminance that is obtained when a certain voltage is applied, that is, high light emission efficiency.

  As an electronic device manufactured by applying the present invention, a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device (car audio, audio component, etc.), a computer, a game device, a portable information terminal (mobile computer, A display device capable of playing back a recording medium such as a mobile phone, a portable game machine, or an electronic book) or an image playback device (specifically, Digital Versatile Disc (DVD)) and displaying the image. And the like). Specific examples of these electronic devices are shown in FIGS.

  FIG. 12A illustrates a television device according to this embodiment, which includes a housing 9101, a supporting base 9102, a display portion 9103, speaker portions 9104, a video input terminal 9105, and the like. In this television device, the display portion 9103 is formed by arranging light-emitting elements similar to those described in Embodiment Modes 1 to 5 in a matrix. The light-emitting element has a feature of high luminous efficiency. Since the display portion 9103 including the light-emitting elements has similar features, deterioration in image quality is reduced and power consumption can be reduced in this television set. With such a feature, the deterioration compensation function and the power supply circuit can be significantly reduced or reduced in the television device, so that the housing 9101 and the support base 9102 can be reduced in size and weight. In the television set according to this embodiment, low power consumption, high image quality, and reduction in size and weight are achieved; therefore, a product suitable for a living environment can be provided.

  FIG. 12B illustrates a computer according to this embodiment, which includes a main body 9201, a housing 9202, a display portion 9203, a keyboard 9204, an external connection port 9205, a pointing device 9206, and the like. In this computer, the display portion 9203 includes light-emitting elements similar to those described in Embodiment Modes 1 to 5 arranged in a matrix. The light-emitting element has a feature of high luminous efficiency. Since the display portion 9203 including the light-emitting elements has similar features, this computer has reduced image quality deterioration and reduced power consumption. With such a feature, the deterioration compensation function and the power supply circuit can be significantly reduced or reduced in the computer, so that the main body 9201 and the housing 9202 can be reduced in size and weight. Since the computer according to this embodiment has low power consumption, high image quality, and reduced size and weight, a product suitable for the environment can be provided.

  FIG. 12C illustrates a mobile phone according to this embodiment, which includes a main body 9401, a housing 9402, a display portion 9403, an audio input portion 9404, an audio output portion 9405, operation keys 9406, an external connection port 9407, an antenna 9408, and the like. including. In this cellular phone, the display portion 9403 is formed by arranging light-emitting elements similar to those described in Embodiment Modes 1 to 5 in a matrix. The light-emitting element has a feature of high luminous efficiency. Since the display portion 9403 including the light-emitting elements has similar features, deterioration in image quality is reduced in this cellular phone and power consumption is reduced. With such a feature, the deterioration compensation function and the power supply circuit can be significantly reduced or reduced in the mobile phone, so that the main body 9401 and the housing 9402 can be reduced in size and weight. Since the cellular phone according to this embodiment has low power consumption, high image quality, and reduced size and weight, a product suitable for carrying can be provided.

  FIG. 12D illustrates a camera, which includes a main body 9501, a display portion 9502, a housing 9503, an external connection port 9504, a remote control receiving portion 9505, an image receiving portion 9506, a battery 9507, an audio input portion 9508, operation keys 9509, an eyepiece portion. 9510 etc. are included. In this camera, the display portion 9502 is configured by arranging light-emitting elements similar to those described in Embodiment Modes 1 to 5 in a matrix. The light-emitting element has a feature of high luminous efficiency. Since the display portion 9502 including the light-emitting elements has similar features, deterioration in image quality is reduced in this camera and power consumption is reduced. With such a feature, a deterioration compensation function and a power supply circuit can be significantly reduced or reduced in the camera, so that the main body 9501 can be reduced in size and weight. Since the camera according to this embodiment has low power consumption, high image quality, and reduced size and weight, a product suitable for carrying can be provided.

  As described above, the applicable range of the light-emitting device manufactured by applying the present invention is so wide that the light-emitting device can be applied to electronic devices in various fields. By applying the present invention, an electronic device having a display portion with low power consumption and high reliability can be manufactured.

  The light-emitting device to which the present invention is applied can also be used as a lighting device. One mode in which the light-emitting element to which the present invention is applied is used as a lighting apparatus is described with reference to FIGS.

  FIG. 13 illustrates an example of a liquid crystal display device using the light-emitting device to which the present invention is applied as a backlight. The liquid crystal display device illustrated in FIG. 13 includes a housing 501, a liquid crystal layer 502, a backlight 503, and a housing 504, and the liquid crystal layer 502 is connected to a driver IC 505. The backlight 503 uses the light-emitting device of the present invention, and a voltage is applied to the terminal 506.

  By using the light-emitting device of the present invention as a backlight of a liquid crystal display device, a backlight with high luminance and long life can be obtained, so that the quality as a display device is improved. The light-emitting device of the present invention is a surface-emitting light-emitting device and can have a large area. Therefore, the backlight can have a large area, and a liquid crystal display device can have a large area. Further, since the light-emitting element is thin and has low power consumption, a display device with a thin backlight and low power consumption can be provided.

  In addition, since the light-emitting device to which the present invention is applied can emit light with high luminance, the light-emitting device can be used as a headlight for automobiles, bicycles, ships, and the like. FIG. 14 shows an example in which the light emitting device to which the present invention is applied is used as a headlight of an automobile. FIG. 14B is an enlarged cross-sectional view of a portion of the headlight 1000 in FIG. In FIG. 14B, the light-emitting device of the present invention is used as the light source 1011. Light emitted from the light source 1011 is reflected by the reflecting plate 1012 and extracted to the outside. As shown in FIG. 14B, light with higher luminance can be obtained by using a plurality of light sources. FIG. 14C illustrates an example in which the light-emitting device of the present invention manufactured in a cylindrical shape is used as a light source. Light emitted from the light source 1021 is reflected by the reflecting plate 1022 and extracted outside.

  FIG. 15 illustrates an example in which the light-emitting device to which the present invention is applied is used as a table lamp which is a lighting device. A table lamp illustrated in FIG. 15 includes a housing 2001 and a light source 2002, and the light-emitting device of the present invention is used as the light source 2002. Since the light-emitting device of the present invention can emit light with high luminance, the hand can be brightly illuminated when performing fine work.

  FIG. 16 illustrates an example in which the light-emitting device to which the present invention is applied is used as an indoor lighting device 3001. Since the light-emitting device of the present invention can have a large area, it can be used as a large-area lighting device. In addition, since the light-emitting device of the present invention is thin and has low power consumption, it can be used as a lighting device with low thickness and low power consumption. In this manner, a television set according to the present invention as described with reference to FIG. 12A is installed in a room where the light-emitting device to which the present invention is applied is used as an indoor lighting device 3001, so that a public broadcast or a movie can be played. You can appreciate it. In such a case, since both devices have low power consumption, it is possible to save electricity charges and to watch powerful images in a bright room.

  The lighting device is not limited to those illustrated in FIGS. 14, 15, and 16, and can be applied as various types of lighting devices including lighting of houses and public facilities. Since the lighting device according to the present invention has a thin light emitting layer and a high degree of design freedom, it is possible to provide products with various designs on the market.

  Hereinafter, details of the present invention will be described using examples.

  Zinc sulfide, copper sulfate, magnesium chloride, and sodium chloride were weighed to 50 g, 0.0818 g, 4.8865 g, and 0.2999 g, respectively, and mixed with stirring using a menor mortar. After appropriate mixing, this mixture was placed in an alumina container and baked at 1100 ° C. for 4 hours using an electric furnace in an Ar atmosphere. The obtained light emitting material (hereinafter referred to as ZnS: Cu, Cl) was grayish white. When UV light having a wavelength of 254 nm or 356 nm was irradiated, blue-green light emission could be confirmed at any wavelength.

  Next, 0.7114 g of manganese was weighed, and manganese was put into the alumina container while preventing it from sticking to the side wall of the alumina container as much as possible. Appropriate vibration was applied to flatten the surface. On top of that, weighed 3.9430 g of ZnS: Cu, Cl was added, and moderate vibration was applied to flatten the surface. The alumina container was covered and baked at 1100 ° C. for 4 hours using an electric furnace in an Ar atmosphere. After firing, the light emitting material was taken out from the alumina container while irradiating with UV light having a wavelength of 365 nm. As a result, a light emitting material having a different emission color in the depth direction was formed in contact with manganese. The light emitting materials are referred to as a lower layer region, a middle layer region, and an upper layer region in order from the portion in contact with manganese. In this example, three types of emission colors were obtained, and different colors were shown in each region. In addition, since manganese melted and solidified at the bottom of the alumina container, it was easy to separate from the light emitting material.

FIG. 17 shows a PL spectrum of the obtained light emitting material. The horizontal axis is the wavelength (nm), and the vertical axis is the normalized photon count. In the lower layer region, an orange PL spectrum caused by manganese ions was obtained, and in the upper layer region, a donor-acceptor pair recombination-type blue-green PL spectrum caused by copper ions and chloride ions was obtained. In the middle layer region, an orange PL spectrum caused by manganese ions and a blue-green PL spectrum caused by copper ions and chloride ions were obtained.

  From this, a light emitting material having a plurality of light emission wavelengths was obtained regardless of the amount of the light emitting center material. Further, since no flux or the like is used, a light emitting material with high purity was obtained.

Into a quartz tube containing an alumina container, 0.774 g of weighed manganese was put, and moderate vibration was applied to flatten the surface. On top of that, weighed 3.9430 g of ZnS: Cu, Cl (material used in Example 1) was added and moderate vibration was applied to flatten the surface. Next, the quartz tube was evacuated to 1 × 10 ⁻⁴ (Pa) or less, and the quartz tube containing the alumina container was sealed using a burner. Thereafter, firing was performed at 1250 ° C. for 4 hours using an electric furnace in an N ₂ atmosphere. The obtained luminescent material was grayish white. When the luminescent material was taken out from the alumina container while irradiating UV light having a wavelength of 356 nm, luminescent materials having different emission colors in the depth direction were formed in contact with manganese. The light emitting materials are referred to as a lower layer region, a middle layer region, and an upper layer region in order from the portion in contact with manganese. In this example, two types of emission colors were obtained, and the lower layer region and the upper layer region showed the same color, and the middle layer region showed a different color from the other regions. In addition, since manganese melted and solidified at the bottom of the alumina container, it was easy to separate from the light emitting material.

FIG. 18 shows a PL spectrum of the obtained light emitting material. The horizontal axis is the wavelength (nm), and the vertical axis is the normalized photon count. In the lower layer region and the upper layer region, orange PL spectra caused by manganese ions are obtained, and in the middle layer region, donor-acceptor pair recombination-type blue-green PL spectra and manganese ions caused by copper ions and chloride ions are obtained. An orange PL spectrum was obtained.

  From this, a light emitting material having a plurality of light emission wavelengths was obtained regardless of the amount of the light emitting center material. Further, since no flux or the like is used, a light emitting material with high purity was obtained.

The figure explaining the manufacturing method of the luminescent material of this invention. The figure explaining the manufacturing method of the luminescent material of this invention. The figure explaining the manufacturing method of the luminescent material of this invention. The figure explaining the manufacturing method of the luminescent material of this invention. 4A and 4B illustrate a light-emitting element of the present invention. 4A and 4B illustrate a light-emitting device of the present invention. 4A and 4B illustrate a light-emitting device of the present invention. 4A and 4B illustrate a light-emitting device of the present invention. 4A and 4B illustrate a light-emitting device of the present invention. 4A and 4B illustrate a light-emitting device of the present invention. 4A and 4B illustrate a light-emitting device of the present invention. 8A and 8B each illustrate an electronic device of the invention. The figure explaining the illuminating device of this invention. The figure explaining the illuminating device of this invention. The figure explaining the illuminating device of this invention. The figure explaining the illuminating device of this invention. FIG. 6 illustrates a PL spectrum of a light-emitting material of the present invention. FIG. 6 illustrates a PL spectrum of a light-emitting material of the present invention.

Explanation of symbols

100 container 111 first layer 112 second layer 121 first layer 122 second layer 131 first layer 132 second layer 141 first layer 142 second layer 200 substrate 201 first electrode 202 Light emitting layer 203 Insulating layer 204 Second electrode 410 Substrate 412 Counter substrate 414 Display portion 416 First electrode 418 Second electrode 420 Flexible wiring substrate 424 Partition layer 426 EL layer 428 Auxiliary electrode 430 Color conversion layer 432 Filler 501 Housing Body 502 Liquid crystal layer 503 Backlight 504 Case 505 Driver IC
506 Terminal 601 Source side driving circuit 602 Pixel portion 603 Gate side driving circuit 604 Sealing substrate 605 Sealing material 607 Space 608 Wiring 609 FPC (flexible printed circuit)
610 Element substrate 611 TFT for switching
612 Current control TFT
613 First electrode 614 Insulator 616 EL layer 617 Second electrode 618 Light-emitting element 623 n-channel TFT
624 p-channel TFT
952 First electrode 953 Insulating layer 954 Partition layer 955 EL layer 956 Second electrode 1000 Headlight 1011 Light source 1012 Reflecting plate 1021 Light source 1022 Reflecting plate 2001 Housing 2002 Light source 3001 Illuminating device 9101 Housing 9102 Support base 9103 Display unit 9104 Speaker unit 9105 Video input terminal 9201 Main body 9202 Case 9203 Display unit 9204 Keyboard 9205 External connection port 9206 Pointing device 9401 Main body 9402 Case 9403 Display unit 9404 Audio input unit 9405 Audio output unit 9406 Operation key 9407 External connection port 9408 Antenna 9501 Main unit 9502 Display unit 9503 Case 9504 External connection port 9505 Remote control receiving unit 9506 Image receiving unit 9507 Battery 9508 Audio input unit 9509 Work key 9510 eyepiece

Claims (15)

In the container,
Forming a first layer containing a first luminescent center element;
Forming a second layer containing a host material so as to cover the first layer;
A method for producing a luminescent material, wherein the first luminescent center element is added to the second layer by subjecting the first layer and the second layer in the container to a heat treatment. In claim 1,
In the method for manufacturing a light-emitting material, the heat treatment is performed at a temperature of 700 ° C. to 1500 ° C. In claim 1 or claim 2,
The method for manufacturing a light-emitting material, wherein the heat treatment is performed in a sulfide gas atmosphere. In any one of Claims 1 thru | or 3,
The first luminescent center element is any one or more of copper, silver, gold, manganese, terbium, europium, thulium, cerium, praseodymium, samarium, erbium, aluminum, chlorine, or fluorine. A method for manufacturing a luminescent material. In any one of Claims 1 thru | or 4,
The base material is zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, sulfide A method for producing a light-emitting material, which is any one of barium-aluminum, calcium sulfide-gallium, strontium sulfide-gallium, or barium sulfide-gallium. In any one of Claims 1 thru | or 5,
The method for manufacturing a light emitting material, wherein the second layer includes a second light emission center element different from the first light emission center element. In claim 6,
A method for producing a light-emitting material, wherein an emission color from the first emission center element and an emission color from the second emission center element are in a complementary color relationship. Having a light emitting layer between a pair of electrodes,
The light emitting layer has a particulate light emitting material dispersed in a binder,
The light emitting material includes a first emission center element and a base material,
The light emitting element, wherein the concentration of the first luminescent center element contained in each particle dispersed in the binder is different for each particle. In claim 8,
A light-emitting element further including an insulating layer between the pair of electrodes. In claim 9,
The insulating layer includes one or more of yttrium oxide, titanium oxide, aluminum oxide, hafnium oxide, tantalum oxide, silicon oxide, barium titanate, strontium titanate, lead titanate, silicon nitride, and zirconium oxide. A light emitting device characterized by the above. In any one of Claims 8 to 10,
The first luminescent center element is any one of copper, silver, gold, manganese, terbium, europium, thulium, cerium, praseodymium, samarium, erbium, aluminum, chlorine, or fluorine. . In any one of Claims 8 thru | or 11,
The luminescent material includes a second luminescent center element,
The second emission center element is any one of copper, silver, gold, manganese, terbium, europium, thulium, cerium, praseodymium, samarium, erbium, aluminum, chlorine, or fluorine, and the first emission center A light-emitting element which is different from an element. In any one of Claims 8 to 12,
The base material is zinc sulfide, cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide, strontium sulfide, barium sulfide, zinc oxide, yttrium oxide, aluminum nitride, gallium nitride, indium nitride, zinc selenide, zinc telluride, sulfide A light-emitting element which is any one of barium-aluminum, calcium sulfide-gallium, strontium sulfide-gallium, or barium sulfide-gallium. A light emitting device comprising: the light emitting element according to claim 8; and a control unit that controls light emission of the light emitting element. Having a display,
14. The electronic apparatus comprising: the light emitting element according to claim 8; and a control unit that controls light emission of the light emitting element.

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