JP2008003034A - Scanning probe microscope - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To inexpensively form a mark showing the position of a probe to a cantilever with high precision, without laboring, and to accurately align the leading end position of the probe with the target measuring start position of a sample using the mark. <P>SOLUTION: This scanning probe microscope is equipped with: the cantilever 2b having a probe 2a; the mark M formed on at least either one of a first point P1, where a first extending line L1, which extends in a longitudinal direction of the cantilever from the root position of the probe crosses the leading end surface of the cantilever or a second point P2, where a second extending line L2 which extends in the short direction of the cantilever, from the root position of the probe, crosses the side surface of the cantilever; an optical observation device for optically observing the cantilever and a sample; a monitor for displaying the observation image; and a control part for displaying the measuring start position, selected on the basis of the observation image on the monitor as a reference line and aligning the cantilever so as to allow the reference line to coincide with the mark. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a scanning probe microscope having an optical system for aligning the tip of a probe.

As is well known, a probe with a pointed tip is brought close to the nm order with respect to various samples such as metals, semiconductors, ceramics, resins, polymers, biomaterials and insulators, and the probe and sample at that time 2. Description of the Related Art A scanning probe microscope (SPM) is known as an apparatus that measures the shape of a sample surface and the like at an atomic dimension level by measuring the interaction between the two.
The maximum measurement range of this scanning probe microscope is several tens of μm. Therefore, when observing a micro area in a large sample, it is impossible to visually align the tip of the probe with the micro area to be observed. Accordingly, the normal scanning probe microscope includes a stage for moving the sample and an optical observation device such as an optical microscope having a field of view larger than the SPM measurement range.

Thus, by combining the scanning probe microscope and the optical observation device, the cantilever supporting the probe can be observed by the optical observation device, so that the probe is aligned with the target position on the sample. Can do.
However, since the optical observation device is disposed above the probe and the cantilever, only the back surface of the cantilever can be observed. For this reason, the probe formed on the opposite side cannot be directly observed with an optical observation device, and it is difficult to accurately identify the tip position of the probe.

Therefore, various methods have been conventionally considered in order to solve such a problem and accurately specify the tip position of the probe. For example, what has a marker indicating the position of the probe on the back surface of the cantilever is known (see, for example, Patent Document 1 and Patent Document 2). This marker is provided at a position facing the probe, and is, for example, a protrusion or a dent. The position of the probe can be specified even from the back side of the cantilever by checking the marker with an optical observation device.
Japanese Patent Laid-Open No. 3-102209 JP 2003-315238 A

However, the above conventional methods still have the following problems.
That is, in the conventional method, it is necessary to accurately provide a marker on the back surface of the cantilever so as to face the probe. However, in practice, it is difficult to manufacture while accurately aligning the positions. In general, when manufacturing a probe having a probe and a cantilever, it is manufactured from a semiconductor substrate by performing etching processing using a photoresist film a plurality of times. Since these are on the opposite side, they cannot be formed at the same time using the same photoresist film, or can be formed from the same direction side. For this reason, positional displacement is inevitably caused, and the marker cannot be accurately aligned with the position facing the probe.
In addition, since the number of manufacturing steps is inevitably increased, it takes time and labor, and the manufacturing cost cannot be kept low.

  In addition, the normal cantilever is attached with an angle of tens of degrees with respect to the stage, as shown in FIG. For this reason, even if the optical axis of the optical observation apparatus is aligned with the marker, an error occurs because the actual tip position of the probe does not exist on the optical axis. For example, as shown in FIG. 61, when the probe length L is 60 μm and the cantilever mounting angle θ is 15 °, the error X between the marker and the tip position of the probe is X = L sin θ = It will be about 15.5 μm. Therefore, even if there is a marker, the tip position of the probe cannot be accurately specified from the cantilever side. In particular, since the probe used for driving in liquid or the like is designed to be long in order to suppress the influence of damping, the above-described error X is larger.

  Further, for detecting the displacement of the cantilever, an optical lever method for detecting a laser beam reflected on the back surface of the cantilever is generally used. However, if a marker is provided on the back surface of the cantilever, the laser beam may be irregularly reflected by this marker, which may adversely affect displacement detection. In particular, in a cantilever where the thickness of the cantilever is thin and allows laser light to pass therethrough, it is efficient to irradiate the laser light to a position where the thickness is as large as possible, that is, the back surface of the portion where the probe is formed. However, as described above, if there is a marker at this position, the reflection efficiency of the laser beam is impaired, and displacement detection is adversely affected.

  The present invention has been made in consideration of such circumstances, and an object of the present invention is to form a mark indicating the position of the probe on the cantilever at low cost and high accuracy without taking time and use the mark. Thus, it is an object of the present invention to provide a scanning probe microscope capable of accurately aligning the tip position of the probe with the measurement start position targeted by the sample.

In order to achieve the above object, the present invention provides the following means.
The scanning probe microscope of the present invention includes a cantilever disposed above a sample and having a probe at the tip, a first extension line extending in the longitudinal direction of the cantilever from the root position of the probe, and the tip of the cantilever At least one of a first point where the surface intersects, or a second point where the second extension line extending from the base position of the probe in the short direction of the cantilever and the side surface of the cantilever intersect A mark formed at a point, a moving means for relatively moving the sample and the cantilever, an optical observation device for optically observing the cantilever and the sample on the same optical axis, and the optical observation device The monitor that displays the observed image and the measurement start position of the sample selected based on the observed image are superimposed on the observed image as a reference line. And a control unit for displaying on the monitor, the control unit, when observing the cantilever, is characterized in that for controlling said moving means to coincide with the said mark and said reference line.

In the scanning probe microscope according to the present invention, using the mark formed on at least one of the side surface and the tip surface of the cantilever, the tip position of the probe is arbitrarily selected as the measurement start position of the sample. Can be accurately aligned.
First, a sample is observed with an optical observation device, and an observation image is displayed on a monitor. The operator specifies the measurement start position of the sample based on this observation image. Then, a control part displays a reference line on a monitor in the state overlapped with an observation image in the specified measurement start position. Thereby, the measurement start position of the sample can be indicated by the reference line.

Next, the cantilever is optically observed again using the optical observation device. At this time, observation is performed with the same optical axis as when the sample was observed earlier. Here, the cantilever is preliminarily formed with a mark indicating the root position of the probe in at least one of the front end surface which is the first point or the side surface which is the second point. ing. Therefore, when observing the cantilever, this mark can be confirmed on the monitor.
And a control part operates a moving means suitably, moves a cantilever and a sample relatively, and makes a mark correspond with a reference line. At this time, the operator can confirm that the mark and the reference line coincide with each other by the observation image displayed on the monitor.

As a result, even if the tip position of the probe cannot be confirmed directly, the tip position of the probe can be aligned with the target measurement start position as described above.
In particular, the mark is formed on the tip surface or side surface of the cantilever, unlike the conventional one. Therefore, when manufacturing the cantilever, the mark can be patterned from the side on which the probe is formed, or the probe and the mark can be simultaneously formed by patterning using the same mask. Therefore, the mark can be formed in a state where the error between the mark position and the probe root position is suppressed as much as possible. Therefore, by aligning the reference line and the mark, the tip position of the probe can be aligned with the measurement start position with higher accuracy than in the past.

In addition, since the mark and the probe can be formed with fewer steps than before, the manufacturing process can be reduced, time and labor can be reduced, and the manufacturing cost can be reduced. Further, since the mark is formed on the tip surface or the side surface of the cantilever, the mark can be confirmed from the upper side or the lower side of the sample when observing with the optical observation device. Therefore, more various observations can be performed and it is easy to use.
Further, since the mark is not formed on the back surface of the cantilever as in the prior art, there is no influence on the laser beam when detecting the displacement of the cantilever by the optical lever method. Therefore, the displacement of the cantilever can be measured with high accuracy, and the reliability of the observation result of the sample can be improved.

  As described above, in the scanning probe microscope of the present invention, the mark indicating the position of the probe can be formed on the cantilever at low cost and with high accuracy without trouble, and the probe is used by using the cantilever. The tip position of the needle can be accurately aligned with the measurement start position aimed at by the sample.

  The scanning probe microscope of the present invention is the above-described scanning probe microscope of the present invention, wherein the mark is formed at both the first point and the second point, and the reference line is the measurement start. A crosshair consisting of a base point superimposed on a position, a main line extending in the short direction of the cantilever through the base point, and an auxiliary line extending in a direction perpendicular to the main line through the base point It is a feature.

  In the scanning probe microscope according to the present invention, marks are formed at a total of three locations including one location on the tip surface that is the first point and two locations on the side surface that is the second point. In other words, the probe is located at a position where a line connecting two marks formed on the side surface and a first extension line extending in the longitudinal direction of the cantilever passes through one mark formed on the tip surface. Is formed. Therefore, the tip position of the probe can be accurately aligned with the measurement start position by causing the three marks to coincide with the crosshair with the base point superimposed on the measurement start position. In particular, since the marks are formed in three places, it is easy to see at the time of observation, and it is easy to match with the crosshairs.

  Further, the scanning probe microscope of the present invention is the scanning probe microscope of the present invention, wherein the mark is formed at the second point, and the reference line is superimposed on the measurement start position; A main line extending in the short direction of the cantilever through the base point, and two auxiliary lines extending in a direction perpendicular to the main line with a gap between the base point and approximately half the width of the cantilever It is characterized by.

In the scanning probe microscope according to the present invention, marks are formed at two locations on the side surface, which is the second point. That is, the probe is formed at the center of a line connecting two marks formed on the side surface.
On the monitor, a reference line in which a main line extending in the short direction of the cantilever through a base point superimposed on a measurement start position and two auxiliary lines are combined so as to be orthogonal to each other is displayed. . At this time, the two auxiliary lines are arranged in parallel with each other being spaced from the base point by approximately half the width of the cantilever. Therefore, after superimposing the base point of the reference line on the measurement start position, the two marks are aligned with the main line of the reference line and aligned so that the cantilever is inserted between the two auxiliary lines. The tip position of the needle can be accurately aligned with the measurement start position.

  Further, the scanning probe microscope of the present invention is the scanning probe microscope of the present invention, wherein the mark is formed at the first point, and the reference line is superimposed on the measurement start position; A main line extending in the longitudinal direction of the cantilever through the base point and a direction perpendicular to the main line with a gap from the base point by a distance between the root position of the probe and the tip surface It consists of an auxiliary line.

In the scanning probe microscope according to the present invention, a mark is formed at one place on the tip surface which is the first point. That is, the probe is formed on the first extension line (line extending in the longitudinal direction of the cantilever) passing through the mark.
On the monitor, a reference line is displayed in which a main line extending in the longitudinal direction of the cantilever through a base point superimposed on the measurement start position and an auxiliary line orthogonal to the main line are combined.
At this time, the auxiliary line is displayed at a position spaced from the base point by the distance between the root position of the probe and the tip surface. Therefore, after superimposing the base point of the reference line on the measurement start position, the mark is aligned with the main line of the reference line, and the tip position of the probe is adjusted by aligning the cantilever so that the tip surface is aligned with the auxiliary line. Can be accurately aligned with the measurement start position.

  In the scanning probe microscope of the present invention, the control unit may change the distance between the main line and the auxiliary line to an arbitrary magnification around the base point. It is a feature.

  In the scanning probe microscope according to the present invention, the control unit changes the distance between the main line and the auxiliary line around the base point to an arbitrary magnification. Therefore, when observing the cantilever, the magnification of the optical observation device is Even in such a case, the mark and the reference line can be easily and accurately aligned. Therefore, alignment becomes easy and usability improves.

  Further, the scanning probe microscope of the present invention is the above-described scanning probe microscope of the present invention, wherein the probe is calculated on the side surface of the cantilever based on the mounting angle of the cantilever and the length of the probe. A correction mark is formed at a position deviated from the mark formed at the second point by the correction amount from the root position to the tip position of the probe.

In the scanning probe microscope according to the present invention, the tip position of the probe can be more accurately aligned with the measurement start position of the sample no matter what angle the cantilever is attached to the sample. .
That is, when the cantilever is attached with an angle, the tip position of the probe is displaced from the root position. The amount of deviation is determined by the cantilever mounting angle and the probe length. Therefore, based on the mounting angle of the cantilever and the length of the probe, the amount of deviation from the base position of the probe to the tip position is calculated as a correction amount, and the second amount formed on the side surface of the cantilever by this correction amount. A correction mark is formed at a position deviated from the mark of the point.
Therefore, just by aligning the correction mark and the main line of the reference line, the tip position of the probe is set relative to the measurement start position of the sample while observing with an optical observation device without affecting the mounting angle of the cantilever. Accurate alignment is possible.

  Further, the scanning probe microscope of the present invention is the above-mentioned scanning probe microscope of the present invention, wherein the control unit is a plane orthogonal to the optical axis in advance based on the mounting angle of the cantilever and the length of the probe. A correction amount from the base position to the tip position of the probe along the line is calculated, and the main line is displayed at a position shifted from the base point by the calculated correction amount.

In the scanning probe microscope according to the present invention, the tip position of the probe can be accurately aligned with the measurement start position of the sample no matter what angle the cantilever is attached to the sample.
That is, when the cantilever is attached with an angle, the tip position of the probe is displaced from the root position. The amount of deviation is determined by the cantilever mounting angle and the probe length. Therefore, the control unit calculates in advance the amount of deviation from the root position of the probe to the tip position as a correction amount based on the mounting angle of the cantilever and the length of the probe. At this time, a deviation amount along a plane orthogonal to the optical axis observed by the optical observation apparatus is calculated as a correction amount. Then, the control unit displays the main line at a position shifted from the base point by this correction amount.
Therefore, the position of the tip of the probe can be observed while observing with an optical observation device without affecting the mounting angle of the cantilever only by matching the mark of the second point formed on the side surface of the cantilever with the main line of the reference line. Can be accurately aligned with the measurement start position of the sample.

  According to the scanning probe microscope of the present invention, the mark indicating the position of the probe can be formed on the cantilever inexpensively and with high accuracy without trouble, and the tip position of the probe can be obtained using the cantilever. Can be accurately aligned with the measurement start position aimed at by the sample.

Hereinafter, an embodiment of a scanning probe microscope according to the present invention will be described with reference to FIGS.
As shown in FIG. 1, the scanning probe microscope 1 of the present embodiment is disposed above a sample S, and a cantilever 2 b having a probe 2 a at the tip, and a cantilever that relatively moves the sample S and the cantilever 2 b. A drive unit (moving means) 3, an optical microscope (optical observation device) 4 for optically observing the cantilever 2b and the sample S with the same optical axis, a monitor 5 for displaying an observation image observed with the optical microscope 4, A control unit 6 that comprehensively controls each of these components and each component described later is provided.

  The sample S is placed on a sample driving unit 10 that moves in three directions, ie, an XY direction parallel to the sample surface S1 and a Z direction parallel to the sample surface S1. The sample driving unit 10 is a piezoelectric element made of, for example, PZT (lead zirconate titanate) or the like, and is configured to slightly move the sample S in the XYZ directions based on an instruction from the control unit 6. Note that the sample driving unit 10 of this embodiment is used when measuring the sample S. The sample driving unit 10 is attached on the housing 11.

  The casing 11 includes a bottom plate portion 11a on which the sample driving unit 10 is placed, a side wall portion 11b extending upward from both ends of the bottom plate portion 11a, and a ceiling provided at the upper end of one side wall portion 11b. It is comprised integrally with the board part 11c. The optical microscope 4 is attached to the top plate portion 11c, and the cantilever 2b and the sample S can be optically observed through an opening 12a of the holder body 12 described later. Further, the optical microscope 4 outputs the observed observation image to the control unit 6, and displays the observation image sent by the control unit 6 on the monitor 5.

A holder main body 12 is attached to the upper end of the other side wall portion 11 b of the case 11 via the cantilever driving portion 3. This holder main body 12 is formed in a plate shape toward one side wall portion 11b of the housing 11, and an opening 12a for securing the optical path of the optical microscope 4 is formed in a substantially intermediate portion. In addition, the probe 2 is detachably fixed to the lower surface of the holder body 12 via a slope block 13.
The cantilever drive unit 3 is a piezoelectric element made of, for example, PZT (lead zirconate titanate) or the like, similar to the sample drive unit 10 described above, and is probed via the holder body 12 based on an instruction from the control unit 6. 2 is moved minutely in the XYZ directions. In addition, the cantilever drive part 3 of this embodiment is used when aligning the tip of the probe 2a.

  The probe 2 includes the probe 2a and the cantilever 2b, and a main body 2c that supports the proximal end side of the cantilever 2b in a cantilever state. Note that the probe 2 of the present embodiment is a self-sensing probe, and measures the deflection (displacement) of the cantilever 2b by itself and outputs an electrical signal corresponding to the deflection to the control unit 6 as an output signal. It has become.

Specifically described this probe 2, as shown in FIGS. 2 and 3, a silicon support layer 20, made of SiO ₂ BOX layer 21 and SOI substrate 23 by bonding thermally three layers of the silicon active layer 22 The probe 2a, the cantilever 2b, and the main body 2c are integrally formed.
An opening 24 is formed on the base end side of the cantilever 2b, which is a joint portion between the cantilever 2b and the main body 2c, and the cantilever 2b is bent and easily bent on the base end side. That is, the base end side of the cantilever 2b functions as a stress concentration portion where stress concentrates. The number of the openings 24 is not limited to one, and two or more openings may be formed or may not be formed.

In addition, a piezoresistive element 25 whose resistance value changes according to the amount of bending of the cantilever 2 b is formed on the base end side of the main body 2 c and the cantilever 2 b so as to go around the opening 24. The piezoresistive element 25 is formed by implanting impurities into the SOI substrate 23 by an ion implantation method or a diffusion method. Further, a metal wiring 26 such as aluminum is electrically connected to the piezoresistive element 25, and the entire shape including the metal wiring 26 is formed in a U shape. Further, the end portions of the metal wiring 26 are external connection terminals 26a for electrical connection to the outside.
That is, the current that flows from one external connection terminal 26 a to the metal wiring 26 passes through the piezoresistive element 25 so as to wrap around the opening 24, and then passes from the other external connection terminal 26 a to the outside via the other metal wiring 26. It comes to flow.

  Then, by applying a bias voltage to the metal wiring 26 via the external connection terminal 26a, an electric signal whose level changes in accordance with the bending of the cantilever 2b, that is, the distortion generated in the piezoresistive element 25 is taken out as an output signal. Be able to. And the control part 6 calculates the bending of the cantilever 2b based on the sent output signal, and measures the sample S.

  Further, in the cantilever 2b of the present embodiment, notched marks M are formed at a total of three locations including one location of a first point P1 and 2 locations of a second point P2 described below. The first point P1 is a position where the first extension line L1 extending from the root position of the probe 2a in the longitudinal direction of the cantilever 2b and the tip surface of the cantilever 2b intersect. The second point P2 is a position where the second extension line L2 extending from the root position of the probe 2a toward the short direction of the cantilever 2b and the side surface of the cantilever 2b intersect. That is, the probe 2a is formed at a position where the first extension line L1 and the second extension line L2 intersect.

As shown in FIG. 1, the control unit 6 displays the observation image sent from the optical microscope 4 on the monitor 5 and measures the sample S arbitrarily selected by the operator based on the observation image. As shown in FIG. 4A, the start position P3 is displayed on the monitor 5 as a reference line N while being superimposed on the observation image.
In this embodiment, as shown in FIG. 4B, the base point n0 superimposed on the measurement start position P3, the main line n1 extending in the short direction of the cantilever 2b through the base point n0, and the base point n0. Thus, a cross line composed of an auxiliary line n2 extending in a direction orthogonal to the main line n1 is displayed as a reference line N. In FIGS. 4A and 4C, since the base point n0 of the reference line N and the measurement start position P3 are overlapped, the base point n0 is not shown.
Further, the control unit 6 observes the cantilever 2b with the optical microscope 4 and controls the cantilever driving unit 3 to move the holder main body 12 and the probe 2 in a three-dimensional direction as appropriate when positioning the tip position of the probe 2a. The three marks M formed on the cantilever 2b are made to coincide with the reference line N. This will be described in detail later.

Here, the manufacturing method of the probe 2 will be described in detail.
In the present embodiment, as shown in FIG. 5, a probe using an SOI (Silicon On Insulater) substrate 23 having a silicon support layer 20, a BOX layer 21 made of SiO _2, and a silicon active layer 22 is used. 2 is manufactured.

First, as shown in FIG. 6, a silicon oxide film (SiO ₂ ) 30 is formed by thermally oxidizing the front surface and the back surface of the SOI substrate 23. Next, as shown in FIG. 7, a photoresist film 31 serving as an etching mask is patterned on the silicon oxide film 30 on the silicon active layer 22 side at the position of the probe 2a by photolithography. Then, as shown in FIG. 8, the silicon oxide film 30 is etched using the photoresist film 31 as a mask. After the etching process, the photoresist film 31 is removed as shown in FIG. As a result, the silicon oxide film 30 is patterned at a position where the probe 2a is formed.

  Next, as shown in FIG. 10, by using the patterned silicon oxide film 30 as a mask, reactive ion etching (RIE) or DRIE (Deep Reactive Ion Etching) is performed to probe the silicon active layer 22. 2a is formed. After forming the probe 2a, the silicon oxide film 30 used as a mask is removed as shown in FIG. Then, as shown in FIG. 12, the silicon active layer 22 and the silicon support layer 20 on which the probe 2a is formed are thermally oxidized again to form the silicon oxide film 32 again.

  Next, as shown in FIG. 13, a photoresist film 34 is patterned on the silicon oxide film 32 in the peripheral portion of the probe 2a so as to cover the entire silicon oxide film 32 on the silicon support layer 20 side. After the patterning, as shown in FIG. 14, the silicon oxide film 32 is etched using the photoresist film 34 as a mask. After the etching process, as shown in FIG. 15, the photoresist film 34 used as a mask is removed. As a result, the silicon oxide film 32 is patterned around the probe 2a.

  Next, as shown in FIG. 16, a photoresist film 35 is patterned on the silicon active layer 22. As shown in FIG. 17, the photoresist film 35 is used for patterning the cantilever 2b, the three marks M, and the opening 24 serving as a path of the piezoresistive element 25. After the patterning, as shown in FIG. 18, the silicon active layer 22 is etched using the photoresist film 35 as a mask. After the etching process, as shown in FIG. 19, the photoresist film 35 used as a mask is removed. Thereby, the cantilever 2b having the probe 2a at the tip, the three marks M and the openings 24 can be formed in the silicon active layer 22. In particular, since the mark M can be formed from the side on which the probe 2a is formed, the mark M can be formed in a state of being accurately aligned with the probe 2a.

  Next, as shown in FIG. 20, the silicon active layer 22 is thermally oxidized again to form a silicon oxide film 36. Then, as shown in FIG. 21, a photoresist film 37 is patterned on the silicon oxide film 36 in a region other than where the piezoresistive element 25 is formed. After the patterning, as shown in FIG. 22, impurities are implanted into the silicon active layer 22 by ion implantation or the like using the photoresist film 37 as a mask. Thereby, the piezoresistive element 25 can be formed. Then, as shown in FIG. 23, the photoresist film 37 used as a mask is removed.

  Next, as shown in FIG. 24, the entire surface of the silicon oxide film 36 is covered with a photoresist film 38, and a photoresist film 39 is formed on the silicon oxide film 32 on the silicon support layer 20 side with the bottom shape of the main body 2c. Pattern so as to be. Then, as shown in FIG. 25, the silicon oxide film 32 is etched using the photoresist film 39 as a mask. After the etching process, as shown in FIG. 26, the photoresist films 38 and 39 used as a mask are removed.

  Next, as shown in FIG. 27, the silicon support layer 20 side is entirely covered with the photoresist film 40, and the photoresist film 41 is again formed on the silicon oxide film 36 on the silicon active layer 22 side in the region excluding the piezoresistive element 25. Is patterned. Then, as shown in FIG. 28, the silicon oxide film 36 is etched using the photoresist film 41 as a mask. Then, as shown in FIG. 29, the photoresist films 40 and 41 used as the mask are removed. Thereby, a part of the silicon oxide film 36 covering the piezoresistive element 25 can be removed.

  Next, as shown in FIG. 30, a metal film 41 such as aluminum is formed on the silicon oxide film 32 on the silicon active layer 22 side by vapor deposition, sputtering, or the like. At this time, since the silicon oxide film 32 is partially removed in the above-described process, the metal film 41 and the piezoresistive element 25 are electrically connected. Then, as shown in FIG. 31, a photoresist film 42 is patterned on the metal film 41 in the shape of the metal wiring 26. After the patterning, as shown in FIG. 32, the metal film 41 is etched using the photoresist film 42 as a mask. As a result, the metal wiring 26 electrically connected to the piezoresistive element 25 can be formed from the metal film 41. Then, after the etching process, as shown in FIG. 33, the photoresist film 42 used as a mask is removed.

  Next, as shown in FIG. 34, the silicon support layer 20 side is entirely covered with a photoresist film 43, and the photoresist film 44 is formed on the silicon oxide film 36 on the silicon active layer 22 side in a region other than the periphery of the probe 2a. Is patterned. Then, as shown in FIG. 35, the silicon oxide film 36 is etched using the photoresist film 44 as a mask. After the etching process, as shown in FIG. 36, the photoresist films 43 and 44 are removed.

  Next, as shown in FIG. 37, the entire upper portion of the silicon active layer 22 is again covered with a photoresist film 45. As shown in FIG. 38, with the silicon oxide film 32 patterned on the silicon support layer 20 as a mask, the silicon support layer 20 is made of potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH), or the like. Etching is performed by anisotropic etching using an alkaline etchant or DRIE. At this time, the reaction rate and the like are set so as to stop at the BOX layer 21. Then, as shown in FIG. 39, the silicon oxide film 32 used as a mask is removed and the exposed BOX layer 21 is etched. Thereby, the cantilever 2b and the main-body part 2c can be formed.

  Finally, by removing the photoresist film 45 covering the silicon active layer 22 side, as shown in FIGS. 2 and 3, a self-sensing probe 2 in which three marks M are formed is manufactured. can do.

Next, a case where the tip position of the probe 2a is aligned with the measurement start position P3 of the sample S by the scanning probe microscope 1 having the probe 2 manufactured as described above will be described.
First, as shown in FIG. 1, the sample S is set on the sample driving unit 10 and the probe 2 is attached to the slope block 13. At this time, adjustment is performed so that the angle formed between the sample surface S1 and the cantilever 2b becomes a predetermined angle. Next, the surface of the sample S is optically observed by the optical microscope 4 and an observation image is displayed on the monitor 5 as shown in FIG. The operator specifies the measurement start position P3 of the sample S based on this observation image. For example, the identification is performed by clicking on the screen using a mouse or the like. Then, as shown in FIG.
A reference line N shown in FIG. 4B, that is, a cross line composed of the base point n0, the main line n1, and the auxiliary line n2, is displayed on the monitor 5 in a state of being superimposed on the observation image at the specified measurement start position P3. That is, the base point n0 of the reference line N is overlapped with the measurement open position P3. Thereby, the measurement start position P3 of the sample S can be indicated by the reference line N.
When the reference line N is superimposed, for example, the reference line N may be designed to be displayed when the operator clicks the measurement start position P3. N may be displayed, and after specifying the measurement start position P3, the reference line N may be moved and displayed so that the base point n0 is superimposed on the measurement start position P3.

  Then, after setting the reference line N at the measurement start position P3, the cantilever 2b is optically observed using the optical microscope 4 again. At this time, observation is performed with the same optical axis as when the sample S was observed earlier. Here, on the cantilever 2b, marks indicating the root position of the probe 2a are preliminarily provided at a total of three locations, one on the tip surface that is the first point P1 and two on the side surface that is the second point P2. M is formed. Therefore, as shown in FIG. 4A, the operator can observe the mark M on the monitor 5 when observing the cantilever 2b.

  Then, the cantilever driving unit 3 is appropriately operated by the control unit 6 to move the cantilever 2b and the sample S relatively, and the mark M is made to coincide with the reference line N. That is, as shown in FIG. 4C, the two marks M formed on the side surface of the cantilever 2b are made to coincide with the main line n1 of the reference line N in which the base point n0 is superimposed on the measurement start position P3. The mark M formed on the tip surface of the cantilever 2b is made to coincide with the auxiliary line n2. Thus, by matching the three marks M with the crosshair, the tip position of the probe 2a can be aligned with the measurement start position P3. In particular, in the case of the present embodiment, the marks M are formed at three places, so that it is easy to see at the time of observation and easy to align with the crosshairs.

As a result, even if the tip position of the probe 2a cannot be directly confirmed, the tip position of the probe 2a can be aligned with the target measurement start position P3 as described above. In particular, since the mark M is formed on the tip and side surfaces of the cantilever 2b unlike the conventional one, the error between the position of the mark M and the root position of the probe 2a can be made smaller than before. Therefore, the tip position of the probe 2a can be aligned with the measurement start position P3 more accurately than before.
In addition, since the mark M and the probe 2a can be formed with fewer steps than before, the manufacturing steps can be reduced, time and labor can be reduced, and the manufacturing cost can be reduced.

  As described above, since the mark M indicating the position of the probe 2a is formed on the tip surface (first point P1) and the side surface (second point P2) of the cantilever 2b, the cantilever 2b The mark M indicating the position of the probe 2a can be made with higher accuracy than in the prior art. Therefore, the tip position of the probe 2a can be accurately aligned with the measurement start position P3 targeted by the sample S using the cantilever 2b.

  After the tip position of the probe 2a is aligned with the measurement start position P3 of the sample S, the measurement of the sample S, for example, the surface shape of the sample S is measured. In this case, first, the probe 2a and the sample S are relatively moved by the sample driving unit 10, and scanning of the surface of the sample S is started by the probe 2a. Further, during this scanning, the cantilever 2b tends to bend and deform in accordance with the unevenness of the sample surface S1, so that the resistance value of the piezoresistive element 25 changes. Then, the piezoresistive element 25 outputs an output signal corresponding to the deflection to the control unit 6. The control unit 6 performs feedback control of the sample driving unit 10 in the Z direction so that the output signal becomes constant. Thereby, it is possible to scan the distance between the probe 2a and the sample S in a state where the deflection of the cantilever 2b is controlled to be constant. Further, the control unit 6 can measure the surface shape of the sample S based on a signal for moving the sample driving unit 10 up and down.

  In particular, according to the scanning probe microscope 1 of the present embodiment, before starting the sample S, the tip position of the probe 2a can be accurately aligned with the measurement start position P3. S can be measured.

  In the above embodiment, the case where the notched mark M is formed on the cantilever 2b is taken as an example, but as shown in FIG. 40, the probe 50 having the protruding mark M may be used. Even in this case, the same effects as those of the above-described embodiment can be achieved. Hereinafter, a method for manufacturing the probe 50 will be described with reference to FIGS. 41 to 54. In addition, in these FIG. 41-FIG. 54, sectional drawing which looked at the cantilever 2b from the front end surface side is shown in figure.

First, as shown in FIG. 41, a silicon oxide film (SiO ₂ ) 51 is formed by thermally oxidizing the front surface and the back surface of the SOI substrate 23. Then, as shown in FIG. 42, a photoresist film 52 serving as an etching mask is patterned on the silicon oxide film 51 on the silicon active layer 22 side at the positions of the probe 2a and the mark M by photolithography. That is, patterning is performed as shown in FIG. Then, as shown in FIG. 44, the silicon oxide film 51 is etched using the photoresist film 52 as a mask. After the etching process, the photoresist film 52 is removed as shown in FIG. As a result, the silicon oxide film 51 is patterned at a position where the probe 2a and the mark M are formed.

  Next, as shown in FIG. 46, using the patterned silicon oxide film 51 as a mask, reactive ion etching (RIE) or DRIE (Deep Reactive Ion Etching) is performed to probe the silicon active layer 22. 2a and mark M are formed. Then, as shown in FIG. 47, the silicon oxide film 51 used as a mask is removed. Then, as shown in FIG. 48, the silicon oxide layer 52 is formed again by thermally oxidizing the silicon active layer 22 and the silicon support layer 20 on which the probe 2a and the mark M are formed.

  Next, as shown in FIG. 49, a photoresist film 53 is patterned on the silicon oxide film 52 in the peripheral portion of the probe 2a, and a photoresist film 54 is formed on the silicon oxide film 52 on the silicon support layer 20 side. . After the patterning, as shown in FIG. 50, the silicon oxide film 52 is etched using the photoresist film 53 as a mask. After the etching process, as shown in FIG. 51, the photoresist films 53 and 54 used as a mask are removed. As a result, the silicon oxide film 32 is patterned around the probe 2a.

  Next, as shown in FIG. 52, a photoresist film 55 is patterned on the silicon active layer 22. At this time, as shown in FIG. 53, the photoresist film 55 is patterned so as to cover a part of the three marks M. After the patterning, as shown in FIG. 54, the silicon active layer 22 is etched using the photoresist film 55 as a mask. After the etching process, as shown in FIG. 55, the photoresist film 55 used as a mask is removed. Thereby, the cantilever 2b in which the probe 2a, the three marks M, and the openings 24 are formed can be formed in the silicon active layer 22.

  In particular, since the mark M can be formed from the side on which the probe 2a is formed, the mark M can be formed in a state of being accurately aligned with the position of the probe 2a. Moreover, in this manufacturing method, as shown in FIG. 46, the probe 2a and the mark M can be formed simultaneously at the same timing, so that the error between the position of the mark M and the position of the probe 2a is further eliminated. More preferable. Further, the subsequent steps are the same as those shown in FIGS.

  In the above embodiment, the self-sensing type probe 2 having the piezoresistive element 25 has been described as an example. However, the cantilever 2b is not bent by the optical lever method as shown in FIG. You may comprise so that it may measure. That is, a laser light source 60 that irradiates laser light L, a half mirror 61 that reflects the irradiated laser light L toward a reflecting surface (not shown) formed on the back surface of the cantilever 2b through the opening 12a of the holder body 12, and Displacement comprising a mirror 62 for reflecting the laser beam L reflected by the reflecting surface and passing through the opening 12a of the holder body 12 to the laser receiving unit 63, and a laser receiving unit 63 for receiving the laser beam L reflected by the mirror 62. A measuring means 64 may be provided.

  The laser light source 60 is fixed on the holder main body 12 via a laser light source driving unit 65 and irradiates the laser light L in a substantially horizontal direction. The half mirror 61 is supported by a gantry (not shown) so as to be disposed between the optical microscope 4 and the cantilever 2b. The mirror 62 is also supported by a gantry (not shown) so as to be adjacent to the half mirror 61. Similarly to the laser light source 60, the laser light receiving unit 63 is fixed on the holder body 12. The laser light receiving unit 63 is, for example, a four-divided photodetector, and detects a change in bending of the cantilever 2b based on the incident position of the laser light L, and controls the detected change in bending of the cantilever 2b as a DIF signal. 6 is output. In the case of this optical lever system, the control unit 6 feedback-controls the sample driving unit 10 so that the DIF signal sent in the same manner as the self-sensing probe 2 is constant.

Thus, even if it is an optical lever system, there can exist the same effect as the case of a self-detection type. In particular, since the mark M is not formed on the back surface of the cantilever 2b as in the prior art, the laser reflection is not affected at all. Therefore, the displacement of the cantilever 2b can be measured with high accuracy, and the reliability of the measurement result can be improved.
Further, there is no possibility that the reflection efficiency of the laser beam L is lowered due to the influence of the mark M as in the prior art. Further, unlike the conventional one, the laser beam L can be accurately radiated to a position that does not have the mark M on the back surface of the cantilever 2b and faces the root of the probe 2a with reference to the mark M on the side surface. Therefore, even if the cantilever 2b has a small thickness, there is no risk of transmitting the laser light L, and the laser light L can be reliably detected.
Further, in the case of the optical lever method, before aligning the tip of the probe 2a, as an initial setting, the laser beam L is confirmed while confirming with the optical microscope 4 so as to be surely incident on the reflecting surface. Although the position is adjusted, even in this case, since the mark M is not formed on the back surface of the cantilever 2b as in the prior art, accurate adjustment can be performed.

In the above embodiment, the three marks M are formed on the cantilever 2b. However, the marks M may be formed on at least one of the first point P1 and the second point P2. .
For example, as shown in FIG. 57 (a), marks M may be formed only at two locations on the side surface of the cantilever 2b, which is the second point P2. In this case, as shown in FIG. 57 (b), the control unit 6 extends in the short direction of the cantilever 2b through the base point n0, not the crosshairs, but over the measurement start position P3, and the base point n0. A reference line N ′ composed of a main line n1 and two auxiliary lines n3 extending in a direction perpendicular to the main line n1 in a state where only a half of the width of the cantilever 2b is spaced from the base point n0 is displayed. Is set. In FIGS. 57A and 57C, since the base point n0 of the reference line N ′ and the measurement start position P3 are overlapped, the base point n0 is not shown.

  When the reference line N ′ is overlapped, for example, the reference line N ′ may be displayed when the operator clicks the measurement start position P3 as in the above-described embodiment. The reference line N ′ is displayed on the monitor 5 in advance, and after the measurement start position P3 is specified, the reference line N ′ is moved and displayed so that the base point n0 is superimposed on the measurement start position P3. You may design it. In any case, the measurement start position P3 of the sample S can be indicated by the reference line N ′ by superimposing the base point n0 on the measurement start position P3.

  Thereafter, as shown in FIG. 57 (c), the two marks M are aligned with each other on the main line n1 and aligned so that the cantilever 2b enters between the two auxiliary lines n3. Can be accurately aligned with the measurement start position P3.

  In this case, the control unit 6 may be set so that the distance between the main line n1 and the auxiliary line n3 can be changed to an arbitrary magnification around the base point n0. Thus, when observing the cantilever 2b, the distance between the main line n1 and the auxiliary line n3 can be changed in accordance with the magnification regardless of the magnification of the optical microscope 4. Therefore, the mark M and the reference line N ′ can be easily and accurately aligned, and the usability is improved.

  Further, as shown in FIG. 58 (a), one mark M may be formed only on the tip surface of the cantilever 2b which is the first point P1. As shown in FIG. 58 (b), the control unit 6 in this case is not a crosshair but a base point n0 superimposed on the measurement start position P3 and a main line extending in the longitudinal direction of the cantilever 2b through the base point n0. A reference line N ″ composed of n4 and an auxiliary line n5 extending in a direction orthogonal to the main line n4 with a gap between the base point n0 and the root position of the probe 2a and the tip surface is displayed. Is set to let In FIGS. 58A and 58C, the base point n0 of the reference line N ″ and the measurement start position P3 are overlapped, and therefore the base point n0 is not shown.

  When the reference line N ″ is overlapped, it is designed so that the reference line N ″ is displayed when the operator clicks the measurement start position P3, for example, as in the above-described embodiment. The reference line N ″ is displayed on the monitor 5 in advance, and after specifying the measurement start position P3, the reference line N ″ is moved so that the base point n0 is superimposed on the measurement start position P3. It may be designed to be displayed. In any case, the measurement start position P3 of the sample S can be indicated by the reference line N ″ by superimposing the base point n0 on the measurement start position P3.

  Thereafter, as shown in FIG. 58 (c), measurement of the tip position of the probe 2a is started by aligning the cantilever 2b so that the mark M is aligned with the main line n4 and the tip surface is aligned with the auxiliary line n5. The position can be accurately aligned with the position P3.

In this case as well, as in the case where the marks M are formed at two locations, the control unit 6 may be set so that the distance between the main line n4 and the auxiliary line n5 can be changed to an arbitrary magnification around the base point n0. . In this way, when the cantilever 2b is observed, the distance between the main line n4 and the auxiliary line n5 can be changed according to the magnification regardless of the magnification of the optical microscope 4. Therefore, the mark M and the reference line N can be easily and accurately aligned, and the usability is improved.
Further, in this case, as shown in FIG. 58 (c), the auxiliary auxiliary line n6 may be displayed so as to be arranged in parallel with the main line n4 with the main line n4 interposed therebetween. By doing so, the parallelism of the cantilever 2b can be confirmed with reference to the auxiliary auxiliary line n6. Therefore, it is easier to align the reference line N ″ and the mark M.

  Further, as shown in FIG. 59A, it is more preferable to form two correction marks M 'on the side surface of the cantilever 2b. The correction mark M ′ is the second amount corresponding to the correction amount (length Z) from the root position of the probe 2a to the tip position calculated based on the mounting angle of the cantilever 2b and the length of the probe 2a. This is a mark formed at a position shifted from the mark M formed at the point P2. In this way, the tip position of the probe 2a can be more accurately aligned with the measurement start position P3 of the sample S, no matter what angle the cantilever 2b is attached to the sample S.

  That is, when the cantilever 2b is attached with a particularly large angle, the tip position of the probe 2a deviates from the root position as shown in FIG. 59 (b). The shift amount Z is determined by the mounting angle θ of the cantilever 2b and the length of the probe 2a. Therefore, based on the mounting angle θ of the cantilever 2b and the length of the probe 2a, a deviation amount Z from the root position of the probe 2a to the tip position is calculated as a correction amount, and the second point is calculated by this correction amount. A correction mark M ′ is formed at a position shifted from the mark M formed on P2.

Therefore, even if the correction angle M ′ and the main line n1 of the reference line N coincide with each other, even if the mounting angle θ of the cantilever 2b is particularly large, the probe 2a is not affected by the mounting angle θ. The tip position can be more accurately aligned with the measurement start position P3 of the sample S.
Even in this case, since the mark M is formed at the second point P2, when the optical lever method is adopted, the position facing the root of the probe 2a with the mark M as a reference. Can be irradiated with laser light.

Further, when the mounting angle θ of the cantilever 2b is particularly large, the reference line N side may be shifted instead of forming the above-described correction mark M ′ on the cantilever 2b.
That is, when three marks M are formed on the cantilever 2b, or when two marks M are formed, the position of the main line n1 displayed on the monitor 5 is as shown in FIG. The display is shifted from the base point n0 by the length X.

More specifically, as shown in FIG. 59 (b), when the cantilever 2b is attached with a particularly large angle, the tip position of the probe 2a deviates from the root position.
Therefore, the control unit 6 calculates a deviation amount X from the root position of the probe 2a to the tip position as a correction amount based on the mounting angle θ of the cantilever 2b and the length of the probe 2a in advance. At this time, unlike the case of the correction mark M ′ described above, the control unit 6 calculates a deviation amount X along a plane orthogonal to the optical axis observed by the optical microscope 4. This is because the optical microscope 4 always observes from the optical axis direction. Then, after calculating the shift amount X as a correction amount, the control unit 6 displays the main line n1 while being shifted from the base point n0 by the length X as described above.

  Therefore, even if the mounting angle θ of the cantilever 2b is particularly large, the mark M of the second point P2 formed on the side surface of the cantilever 2b is made to coincide with the main line n1, and the mounting angle θ is affected. Without any problem, the tip position of the probe 2a can be accurately aligned with the measurement start position P3 of the sample S.

  The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.

  For example, in the above embodiment, the optical microscope is arranged above the cantilever. However, for example, the optical microscope may be arranged below the sample and observed from below. Even in this case, since the mark is formed on at least one of the front end surface and the side surface of the cantilever, unlike the conventional one, the mark can be reliably confirmed from the lower side, and the probe The tip position can be adjusted to the measurement start position.

It is a block diagram of the scanning probe microscope which concerns on one Embodiment of this invention. It is a top view of the probe which comprises the scanning probe microscope shown in FIG. It is sectional drawing of the A-A 'line | wire of the probe shown in FIG. FIG. 2A is a diagram showing an observation image displayed on the monitor of the scanning probe microscope shown in FIG. 1, wherein FIG. 1A is a diagram showing a state where a cantilever is observed after setting a reference line at a measurement start position. (B) is a diagram showing the reference line shown in (a), and (c) is a diagram showing a state where the mark of the cantilever is matched with the reference line. FIG. 3 is a process diagram illustrating an example of a method for manufacturing the probe illustrated in FIG. 2, and is a side view illustrating an SOI substrate that is a start substrate. It is a figure which shows the state which formed the silicon oxide film in the silicon | silicone active layer and the silicon | silicone support layer from the state shown in FIG. FIG. 7 is a view showing a state in which a photoresist film is patterned on the silicon oxide film on the silicon active layer side from the state shown in FIG. 6. It is a figure which shows the state which etched and patterned the silicon oxide film from the state shown in FIG. 7 using a photoresist film as a mask. It is a figure which shows the state which removed the photoresist film from the state shown in FIG. FIG. 10 is a diagram showing a state in which a probe is formed by etching the silicon active layer using the patterned silicon oxide film as a mask from the state shown in FIG. 9. It is a figure which shows the state which removed the silicon oxide film from the state shown in FIG. It is a figure which shows the state which formed the silicon oxide film again on the silicon | silicone active layer and silicon support layer from the state shown in FIG. It is a figure which shows the state which formed the photoresist film on the silicon oxide film by the side of a silicon active layer from the state shown in FIG. It is a figure which shows the state which etched the silicon oxide film from the state shown in FIG. 13 by using a photoresist film as a mask. It is a figure which shows the state which removed the photoresist film from the state shown in FIG. FIG. 16 is a view showing a state in which a photoresist film is patterned on the silicon active layer from the state shown in FIG. 15. It is a figure which shows the patterning shape of the photoresist film shown in FIG. It is a figure which shows the state which etched the silicon active layer from the state shown in FIG. 16 by using a photoresist film as a mask. It is a figure which shows the state which removed the photoresist film from the state shown in FIG. It is a figure which shows the state which formed the silicon oxide film again on the silicon | silicone active layer from the state shown in FIG. It is a figure which shows the state which patterned the photoresist film on the silicon oxide film by the side of a silicon active layer from the state shown in FIG. FIG. 22 is a diagram showing a state in which a piezoresistive element is formed in a silicon active layer from the state shown in FIG. 21 using a photoresist film as a mask. It is a figure which shows the state which removed the photoresist film from the state shown in FIG. FIG. 24 is a diagram showing a state in which a photoresist film is formed on the silicon oxide film on the silicon active layer side and a photoresist film is patterned on the silicon oxide film on the silicon support layer side from the state shown in FIG. FIG. 25 is a view showing a state where the silicon oxide film on the silicon support layer side is etched from the state shown in FIG. 24 using the photoresist film as a mask. It is a figure which shows the state which removed the photoresist film from the state shown in FIG. FIG. 27 is a diagram showing a state in which a photoresist film is patterned again on the silicon oxide film on the silicon active layer side and a photoresist film is formed on the silicon oxide film on the silicon support layer side from the state shown in FIG. It is a figure which shows the state which etched the silicon oxide film by the side of a silicon active layer from the state shown in FIG. 27 using a photoresist film as a mask. It is a figure which shows the state which removed the photoresist film from the state shown in FIG. It is a figure which shows the state which formed the metal film on the silicon oxide film by the side of a silicon active layer from the state shown in FIG. It is a figure which shows the state which patterned the photoresist film on the metal film from the state shown in FIG. FIG. 32 is a diagram showing a state where metal wiring is formed by etching the metal film from the state shown in FIG. 31 using the photoresist film as a mask. It is a figure which shows the state which removed the photoresist film from the state shown in FIG. It is a figure which shows the state which patterned the photoresist film on the silicon oxide film by the side of a silicon active layer again from the state shown in FIG. 33, and formed the photoresist film on the silicon support layer. It is a figure which shows the state which etched the silicon oxide film from the state shown in FIG. 34 using a photoresist film as a mask. FIG. 36 is a diagram showing a state in which the photoresist film is removed from the state shown in FIG. FIG. 37 is a diagram showing a state in which a photoresist film is formed again on the silicon active layer from the state shown in FIG. 36. It is a figure which shows the state which etched the silicon | silicone support layer from the state shown in FIG. 37 using the silicon oxide film patterned on the silicon | silicone support layer as a mask. It is a figure which shows the state which etched the BOX layer exposed to the silicon | silicone support layer side from the state shown in FIG. It is the figure which showed the modification of the probe which comprises the scanning probe microscope which concerns on this invention, Comprising: It is a figure which shows the probe in which the projecting mark was formed. It is process drawing which showed an example of the manufacturing method of the probe shown in FIG. 40, Comprising: It is a figure which shows the state which formed the silicon oxide film in the silicon active layer and the silicon support layer. FIG. 42 is a diagram showing a state in which a photoresist film is patterned on the silicon oxide film on the silicon active layer side from the state shown in FIG. 41. FIG. 43 is a diagram showing a patterning shape of the photoresist film shown in FIG. 42. FIG. 43 is a diagram showing a state in which the silicon oxide film is etched and patterned from the state shown in FIG. 42 using the photoresist film as a mask. It is a figure which shows the state which removed the photoresist film from the state shown in FIG. FIG. 46 is a view showing a state in which a probe and a mark are formed by etching the silicon active layer from the state shown in FIG. 45 using the patterned silicon oxide film as a mask. FIG. 47 is a diagram showing a state in which the silicon oxide film is removed from the state shown in FIG. 46. It is a figure which shows the state which formed the silicon oxide film again on the silicon | silicone active layer and silicon support layer from the state shown in FIG. FIG. 49 is a diagram showing a state in which a photoresist film is formed on the silicon oxide film on the silicon active layer side from the state shown in FIG. 48. It is a figure which shows the state which etched the silicon oxide film from the state shown in FIG. 49 using a photoresist film as a mask. FIG. 51 is a diagram showing a state in which the photoresist film is removed from the state shown in FIG. 50. FIG. 52 is a diagram showing a state in which a photoresist film is patterned again on the silicon active layer from the state shown in FIG. 51. FIG. 53 is a view showing a patterning shape of the photoresist film shown in FIG. 52. FIG. 54 is a diagram showing a state in which the silicon active layer is etched from the state shown in FIG. 53 using the photoresist film as a mask. It is a figure which shows the state which removed the photoresist film from the state shown in FIG. It is the figure which showed the modification of the scanning probe microscope which concerns on this invention, Comprising: It is a figure which shows the scanning probe microscope which measures the displacement of a cantilever by an optical lever system. It is the figure which showed the observation image of the scanning probe microscope which has the probe in which the mark was formed in two places of the side surface of a cantilever, Comprising: (a) is the state which observed the cantilever after setting a reference line to a measurement start position (B) is a figure which showed the reference line shown to (a), (c) is a figure which shows the state which made the mark of a cantilever correspond with a reference line. It is the figure which showed the observation image of the scanning probe microscope which has the probe by which the mark was formed in one place of the front end surface of a cantilever, Comprising: (a) set the reference line in the measurement start position, and observed the cantilever It is the figure which showed the state, Comprising: (b) is a figure which showed the reference line shown to (a), (c) is a figure which shows the state which made the mark of a cantilever correspond with a reference line. (A) is a figure which shows the probe which formed the correction mark shifted | deviated by the correction amount computed based on the attachment angle of the cantilever and the probe length on the side surface of the cantilever, (b) It is a figure which shows the state attached in the state which attached the angle. It is a figure which shows the cross line which shifted the main line extended in the transversal direction of the cantilever by the correction amount computed based on the attachment angle of a cantilever and the length of a probe. It is a figure for demonstrating the conventional problem, Comprising: It is a figure which shows the state in which the cantilever is attached in the state which attached the angle.

Explanation of symbols

L1 First extension line L2 Second extension line M mark M ′ Correction mark n0 Base point n1, n4 Main line n2, n3, n5 Auxiliary line N, N ′, N ″ Reference line P1 First point P2 Second point Point P3 Measurement start position S Sample 1 Scanning probe microscope 2a Probe 2b Cantilever 3 Cantilever drive unit (moving means)
4 Optical microscope (optical observation device)
5 Monitor 6 Control unit

Claims (7)

A cantilever disposed above the sample and having a probe at the tip;
A first point where the first extension line extending in the longitudinal direction of the cantilever from the root position of the probe and the tip surface of the cantilever intersect, or in the short direction of the cantilever from the root position of the probe A mark formed at at least one of the second points where the extended second extension line and the side surface of the cantilever intersect;
Moving means for relatively moving the sample and the cantilever;
An optical observation device that optically observes the cantilever and the sample along the same optical axis;
A monitor for displaying an observation image observed with the optical observation device;
A control unit that displays the measurement start position of the sample selected based on the observation image on the monitor as a reference line in a state of being superimposed on the observation image;
The control unit controls the moving unit to match the reference line with the mark when observing the cantilever. The scanning probe microscope according to claim 1,
The mark is formed at both the first point and the second point;
The reference line includes a base point superimposed on the measurement start position, a main line extending in the short direction of the cantilever through the base point, and an auxiliary line extending in a direction perpendicular to the main line through the base point A scanning probe microscope characterized by being a crosshair consisting of The scanning probe microscope according to claim 1,
The mark is formed at the second point;
The reference line includes a base point superimposed on the measurement start position, a main line extending in the short direction of the cantilever through the base point, and the main line in a state of being spaced from the base point by approximately half the width of the cantilever. A scanning probe microscope comprising two auxiliary lines extending in a direction perpendicular to the scanning probe microscope. The scanning probe microscope according to claim 1,
The mark is formed at the first point;
The reference line includes a base point superimposed on the measurement start position, a main line extending in the longitudinal direction of the cantilever through the base point, and a distance from the base point to the base position of the probe and the tip surface. A scanning probe microscope comprising: an auxiliary line extending in a direction orthogonal to the main line with a space left therebetween. The scanning probe microscope according to claim 3 or 4,
The control unit changes a distance between the main line and the auxiliary line to an arbitrary magnification around the base point. The scanning probe microscope according to claim 2 or 3,
On the side surface of the cantilever, the second amount corresponding to the correction amount from the probe root position to the probe tip position calculated based on the mounting angle of the cantilever and the probe length is provided. A scanning probe microscope, wherein a correction mark is formed at a position shifted from a mark formed at a point. The scanning probe microscope according to claim 2 or 3,
The control unit calculates a correction amount from the base position of the probe to the tip position along a plane orthogonal to the optical axis in advance based on the mounting angle of the cantilever and the length of the probe, A scanning probe microscope characterized in that the main line is displayed at a position shifted from the base point by the calculated correction amount.

Images