JP2008094728A - 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 - Google Patents
化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 Download PDFInfo
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- JP2008094728A JP2008094728A JP2006275215A JP2006275215A JP2008094728A JP 2008094728 A JP2008094728 A JP 2008094728A JP 2006275215 A JP2006275215 A JP 2006275215A JP 2006275215 A JP2006275215 A JP 2006275215A JP 2008094728 A JP2008094728 A JP 2008094728A
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- ruthenium
- vapor deposition
- compound
- chemical vapor
- ruthenium compound
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0046—Ruthenium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F17/00—Metallocenes
- C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- H10D64/011—
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- H10P14/42—
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- H10P14/43—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Andreas Schneider et al.,Chem.Vap.Deposition 2005,11,No.2,p.99〜105
・プレカーサ(原料)供給速度:0.1g/min
・気化器温度:120℃
・テープヒーター温度:150℃
・気化器Ar流速:500sccm
・成膜温度:370、400、430、460℃
・成膜圧力:0.1、1、5、10torr
Claims (5)
- 置換基R1がメチル基であり、他の置換基R2〜R6は水素である請求項1記載の有機ルテニウム化合物。
- 置換基R1がメチル基、R4がイソプロピル基であり、他の置換基R2、R3、R5、R6は水素である請求項1記載の有機ルテニウム化合物。
- 置換基R1〜R6がメチル基である請求項1記載の有機ルテニウム化合物。
- 原料化合物となる有機ルテニウム化合物を気化して反応ガスとし、前記反応ガスを基板表面に導入しつつ加熱するルテニウム薄膜又はルテニウム化合物薄膜の化学蒸着法において、
前記有機ルテニウム化合物として請求項1〜請求項4のいずれかに記載の有機ルテニウム化合物を用いる化学蒸着法。
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006275215A JP5032085B2 (ja) | 2006-10-06 | 2006-10-06 | 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 |
| PCT/JP2007/068805 WO2008044478A1 (fr) | 2006-10-06 | 2007-09-27 | Composé organique de ruthénium pour dépôt chimique en phase vapeur, et procédé de dépôt chimique en phase vapeur utilisant le composé organique du ruthénium |
| KR1020087012637A KR100982109B1 (ko) | 2006-10-06 | 2007-09-27 | 화학 증착용 유기 루테늄 화합물 및 이 유기 루테늄화합물을 사용한 화학 증착방법 |
| CN2007800013705A CN101356181B (zh) | 2006-10-06 | 2007-09-27 | 化学气相沉积用的有机钌化合物及使用该有机钌化合物的化学气相沉积方法 |
| US12/091,782 US8097299B2 (en) | 2006-10-06 | 2007-09-27 | Organic ruthenium compound for chemical vapor deposition, and chemical vapor deposition method using the organic ruthenium compound |
| TW096136172A TWI409270B (zh) | 2006-10-06 | 2007-09-28 | 使用有機釕化合物的化學沈積方法 |
| US13/182,720 US8252377B2 (en) | 2006-10-06 | 2011-07-14 | Organoruthenium compound for use in chemical vapor deposition and chemical vapor deposition using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006275215A JP5032085B2 (ja) | 2006-10-06 | 2006-10-06 | 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008094728A true JP2008094728A (ja) | 2008-04-24 |
| JP5032085B2 JP5032085B2 (ja) | 2012-09-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006275215A Active JP5032085B2 (ja) | 2006-10-06 | 2006-10-06 | 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8097299B2 (ja) |
| JP (1) | JP5032085B2 (ja) |
| KR (1) | KR100982109B1 (ja) |
| CN (1) | CN101356181B (ja) |
| TW (1) | TWI409270B (ja) |
| WO (1) | WO2008044478A1 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013510807A (ja) * | 2009-11-14 | 2013-03-28 | ユミコア・アクチエンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト | Ru(0)−オレフィン錯体を調製するためのプロセス |
| WO2014126068A1 (ja) * | 2013-02-18 | 2014-08-21 | 国立大学法人東京農工大学 | 触媒前駆体および不斉鎖状化合物の合成方法 |
| JP2017524729A (ja) * | 2014-05-30 | 2017-08-31 | ユーピー ケミカル カンパニー リミテッド | 新規ルテニウム化合物、その製造方法、これを含む膜蒸着用前駆体組成物、及びこれを利用した膜の蒸着方法 |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090205538A1 (en) * | 2008-01-24 | 2009-08-20 | Thompson David M | Organometallic compounds, processes for the preparation thereof and methods of use thereof |
| KR20100060482A (ko) * | 2008-11-27 | 2010-06-07 | 주식회사 유피케미칼 | 루테늄 금속 또는 루테늄 산화물 박막 증착용 유기 금속 전구체 화합물 및 이를 이용한 박막 증착 방법 |
| JP5140184B1 (ja) * | 2011-08-03 | 2013-02-06 | 田中貴金属工業株式会社 | 化学蒸着原料用の有機ルテニウム化合物及び該有機ルテニウム化合物の製造方法 |
| KR20140131219A (ko) * | 2013-05-03 | 2014-11-12 | 한국화학연구원 | 루테늄 전구체, 이의 제조방법 및 이를 이용하여 박막을 형성하는 방법 |
| KR102686799B1 (ko) * | 2018-11-08 | 2024-07-22 | 엔테그리스, 아이엔씨. | 루테늄 전구체 및 환원 가스를 사용하는 화학 증착 공정 |
| JP2022031988A (ja) * | 2018-11-08 | 2022-02-24 | 株式会社Adeka | 原子層堆積法による金属ルテニウム薄膜の製造方法 |
| TWI762168B (zh) * | 2020-01-31 | 2022-04-21 | 日商田中貴金屬工業股份有限公司 | 包含有機釕化合物之化學蒸鍍用原料及使用該化學蒸鍍用原料之化學蒸鍍法 |
| KR102642469B1 (ko) | 2021-12-22 | 2024-03-04 | (주)원익머트리얼즈 | 유기금속 전구체를 이용한 금속 박막 증착 방법 |
| US20230287022A1 (en) * | 2022-03-14 | 2023-09-14 | Applied Materials, Inc. | Non-Halide Oxygen-Free Organometallic Precursors for ALD/CVD of Metallization |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003306472A (ja) * | 2002-04-18 | 2003-10-28 | Tanaka Kikinzoku Kogyo Kk | Cvd用原料化合物及びルテニウム又はルテニウム化合物薄膜の化学気相蒸着方法 |
| US20060177577A1 (en) * | 2005-02-10 | 2006-08-10 | Thompson David M | Processes for the production of organometallic compounds |
| JP2007169725A (ja) * | 2005-12-22 | 2007-07-05 | Kojundo Chem Lab Co Ltd | ルテニウム膜形成用組成物 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5254742A (en) * | 1991-10-08 | 1993-10-19 | Mitsubishi Petrochemical Co., Ltd. | Process for preparing 2-hexene-1,6-dial |
| JP3371328B2 (ja) | 1997-07-17 | 2003-01-27 | 株式会社高純度化学研究所 | ビス(アルキルシクロペンタジエニル)ルテニウム錯 体の製造方法およびそれを用いたルテニウム含有薄膜 の製造方法 |
| KR100727372B1 (ko) * | 2001-09-12 | 2007-06-12 | 토소가부시키가이샤 | 루테늄착체, 그 제조방법 및 박막의 제조방법 |
| JP2004067601A (ja) * | 2002-08-07 | 2004-03-04 | Tanaka Kikinzoku Kogyo Kk | Cvd原料用の有機化合物及び該有機化合物を用いた金属又は金属化合物薄膜の製造方法 |
| US7547631B2 (en) * | 2006-07-31 | 2009-06-16 | Rohm And Haas Electronic Materials Llc | Organometallic compounds |
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2006
- 2006-10-06 JP JP2006275215A patent/JP5032085B2/ja active Active
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2007
- 2007-09-27 KR KR1020087012637A patent/KR100982109B1/ko active Active
- 2007-09-27 CN CN2007800013705A patent/CN101356181B/zh active Active
- 2007-09-27 WO PCT/JP2007/068805 patent/WO2008044478A1/ja not_active Ceased
- 2007-09-27 US US12/091,782 patent/US8097299B2/en active Active
- 2007-09-28 TW TW096136172A patent/TWI409270B/zh active
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- 2011-07-14 US US13/182,720 patent/US8252377B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2003306472A (ja) * | 2002-04-18 | 2003-10-28 | Tanaka Kikinzoku Kogyo Kk | Cvd用原料化合物及びルテニウム又はルテニウム化合物薄膜の化学気相蒸着方法 |
| US20060177577A1 (en) * | 2005-02-10 | 2006-08-10 | Thompson David M | Processes for the production of organometallic compounds |
| JP2007169725A (ja) * | 2005-12-22 | 2007-07-05 | Kojundo Chem Lab Co Ltd | ルテニウム膜形成用組成物 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013510807A (ja) * | 2009-11-14 | 2013-03-28 | ユミコア・アクチエンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト | Ru(0)−オレフィン錯体を調製するためのプロセス |
| WO2014126068A1 (ja) * | 2013-02-18 | 2014-08-21 | 国立大学法人東京農工大学 | 触媒前駆体および不斉鎖状化合物の合成方法 |
| JPWO2014126068A1 (ja) * | 2013-02-18 | 2017-02-02 | 国立大学法人東京農工大学 | 触媒前駆体および不斉鎖状化合物の合成方法 |
| JP2017524729A (ja) * | 2014-05-30 | 2017-08-31 | ユーピー ケミカル カンパニー リミテッド | 新規ルテニウム化合物、その製造方法、これを含む膜蒸着用前駆体組成物、及びこれを利用した膜の蒸着方法 |
| US9957614B2 (en) | 2014-05-30 | 2018-05-01 | Up Chemical Co., Ltd. | Ruthenium compound, preparation method therefor, precursor composition for film deposition containing same, and method for depositing film by using same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101356181A (zh) | 2009-01-28 |
| TW200819459A (en) | 2008-05-01 |
| TWI409270B (zh) | 2013-09-21 |
| US8097299B2 (en) | 2012-01-17 |
| KR20080095233A (ko) | 2008-10-28 |
| KR100982109B1 (ko) | 2010-09-14 |
| JP5032085B2 (ja) | 2012-09-26 |
| US20090238970A1 (en) | 2009-09-24 |
| US20110268878A1 (en) | 2011-11-03 |
| US8252377B2 (en) | 2012-08-28 |
| CN101356181B (zh) | 2012-01-04 |
| WO2008044478A1 (fr) | 2008-04-17 |
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