JP2007031349A - Silane derivative and organic thin film-forming article - Google Patents
Silane derivative and organic thin film-forming article Download PDFInfo
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- JP2007031349A JP2007031349A JP2005217542A JP2005217542A JP2007031349A JP 2007031349 A JP2007031349 A JP 2007031349A JP 2005217542 A JP2005217542 A JP 2005217542A JP 2005217542 A JP2005217542 A JP 2005217542A JP 2007031349 A JP2007031349 A JP 2007031349A
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- silane derivative
- thin film
- organic thin
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- 150000004756 silanes Chemical class 0.000 title claims abstract description 55
- 239000010409 thin film Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 9
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 3
- -1 benzoinyl group Chemical group 0.000 claims description 33
- 125000005843 halogen group Chemical group 0.000 claims description 9
- 125000001424 substituent group Chemical group 0.000 claims description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 125000003277 amino group Chemical group 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 3
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 2
- 230000002209 hydrophobic effect Effects 0.000 abstract description 12
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 27
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 17
- 229910052753 mercury Inorganic materials 0.000 description 16
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 15
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 238000003786 synthesis reaction Methods 0.000 description 11
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 10
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 239000007787 solid Substances 0.000 description 9
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 5
- JFGLPYACWIUMOX-UHFFFAOYSA-N 2-hydroxy-2-(3-methoxyphenyl)-1-phenylethanone Chemical compound COC1=CC=CC(C(O)C(=O)C=2C=CC=CC=2)=C1 JFGLPYACWIUMOX-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 239000000706 filtrate Substances 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000018 DNA microarray Methods 0.000 description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 4
- 235000019341 magnesium sulphate Nutrition 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- BUUPQKDIAURBJP-UHFFFAOYSA-N sulfinic acid Chemical compound OS=O BUUPQKDIAURBJP-UHFFFAOYSA-N 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000004440 column chromatography Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000006459 hydrosilylation reaction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 0 C*(*)C1C(*C(C(c2c(*)c(*)c(*)c(*)c2*)=O)c2c(*)c(*)c(*)c(*)c2*)*1 Chemical compound C*(*)C1C(*C(C(c2c(*)c(*)c(*)c(*)c2*)=O)c2c(*)c(*)c(*)c(*)c2*)*1 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 2
- 235000002597 Solanum melongena Nutrition 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012043 crude product Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 2
- 230000001537 neural effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000007524 organic acids Chemical group 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 2
- 239000002094 self assembled monolayer Substances 0.000 description 2
- 239000013545 self-assembled monolayer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000104 sodium hydride Inorganic materials 0.000 description 2
- 239000012312 sodium hydride Substances 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 description 1
- PBPZFIDICRTSRM-UHFFFAOYSA-N 1,2-bis(3,4-dimethoxyphenyl)-2-hydroxyethanone Chemical compound C1=C(OC)C(OC)=CC=C1C(O)C(=O)C1=CC=C(OC)C(OC)=C1 PBPZFIDICRTSRM-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- FRPZMMHWLSIFAZ-UHFFFAOYSA-N 10-undecenoic acid Chemical compound OC(=O)CCCCCCCCC=C FRPZMMHWLSIFAZ-UHFFFAOYSA-N 0.000 description 1
- 125000006507 2,4-difluorobenzyl group Chemical group [H]C1=C(F)C([H])=C(F)C(=C1[H])C([H])([H])* 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000004182 2-chlorophenyl group Chemical group [H]C1=C([H])C(Cl)=C(*)C([H])=C1[H] 0.000 description 1
- MNRJAOHSTCXIOT-UHFFFAOYSA-N 2-hydroxy-2-(4-octylphenyl)-1-phenylethanone Chemical compound C1=CC(CCCCCCCC)=CC=C1C(O)C(=O)C1=CC=CC=C1 MNRJAOHSTCXIOT-UHFFFAOYSA-N 0.000 description 1
- 125000006179 2-methyl benzyl group Chemical group [H]C1=C([H])C(=C(C([H])=C1[H])C([H])([H])*)C([H])([H])[H] 0.000 description 1
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 1
- 229940082584 3-(triethoxysilyl)propylamine Drugs 0.000 description 1
- DCQBZYNUSLHVJC-UHFFFAOYSA-N 3-triethoxysilylpropane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCS DCQBZYNUSLHVJC-UHFFFAOYSA-N 0.000 description 1
- 125000006283 4-chlorobenzyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1Cl)C([H])([H])* 0.000 description 1
- 125000001255 4-fluorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1F 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 125000000641 acridinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000002078 anthracen-1-yl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C([*])=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 125000000748 anthracen-2-yl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C([H])=C([*])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 description 1
- LKMCJXXOBRCATQ-UHFFFAOYSA-N benzylsulfanylbenzene Chemical group C=1C=CC=CC=1CSC1=CC=CC=C1 LKMCJXXOBRCATQ-UHFFFAOYSA-N 0.000 description 1
- PFYXSUNOLOJMDX-UHFFFAOYSA-N bis(2,5-dioxopyrrolidin-1-yl) carbonate Chemical compound O=C1CCC(=O)N1OC(=O)ON1C(=O)CCC1=O PFYXSUNOLOJMDX-UHFFFAOYSA-N 0.000 description 1
- HJTOHPJEGNCMLX-UHFFFAOYSA-N but-3-ene-1-sulfinic acid Chemical compound OS(=O)CCC=C HJTOHPJEGNCMLX-UHFFFAOYSA-N 0.000 description 1
- MXYJJDFPHIIPMC-UHFFFAOYSA-N but-3-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CCC=C MXYJJDFPHIIPMC-UHFFFAOYSA-N 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- KHAVLLBUVKBTBG-UHFFFAOYSA-N caproleic acid Natural products OC(=O)CCCCCCCC=C KHAVLLBUVKBTBG-UHFFFAOYSA-N 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- JFGAKYRPJKFCKM-UHFFFAOYSA-N dec-9-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CCCCCCCCC=C JFGAKYRPJKFCKM-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- XUDOZULIAWNMIU-UHFFFAOYSA-N delta-hexenoic acid Chemical compound OC(=O)CCCC=C XUDOZULIAWNMIU-UHFFFAOYSA-N 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 125000004216 fluoromethyl group Chemical group [H]C([H])(F)* 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 125000006343 heptafluoro propyl group Chemical group 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- OSDKJBRMXWOOER-UHFFFAOYSA-N hex-5-ene-1-sulfinic acid Chemical compound OS(=O)CCCCC=C OSDKJBRMXWOOER-UHFFFAOYSA-N 0.000 description 1
- JZWXFBAPUSSBPR-UHFFFAOYSA-N hex-5-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CCCCC=C JZWXFBAPUSSBPR-UHFFFAOYSA-N 0.000 description 1
- 150000004687 hexahydrates Chemical class 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 125000005246 nonafluorobutyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- QIZUXKOTLQTDFY-UHFFFAOYSA-N oct-7-ene-1-sulfinic acid Chemical compound C=CCCCCCCS(=O)O QIZUXKOTLQTDFY-UHFFFAOYSA-N 0.000 description 1
- VMMSMMMLZDGJOS-UHFFFAOYSA-N oct-7-ene-1-sulfinyl chloride Chemical compound ClS(=O)CCCCCCC=C VMMSMMMLZDGJOS-UHFFFAOYSA-N 0.000 description 1
- OVCNPZONSFJKRX-UHFFFAOYSA-N oct-7-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CCCCCCC=C OVCNPZONSFJKRX-UHFFFAOYSA-N 0.000 description 1
- WMBUYNFBIZZOPD-UHFFFAOYSA-N oct-7-ene-1-sulfonyl chloride Chemical compound ClS(=O)(=O)CCCCCCC=C WMBUYNFBIZZOPD-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 125000005740 oxycarbonyl group Chemical group [*:1]OC([*:2])=O 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- HVAMZGADVCBITI-UHFFFAOYSA-N pent-4-enoic acid Chemical compound OC(=O)CCC=C HVAMZGADVCBITI-UHFFFAOYSA-N 0.000 description 1
- JDKQTIKEGOOXTJ-UHFFFAOYSA-N pent-4-enoyl chloride Chemical compound ClC(=O)CCC=C JDKQTIKEGOOXTJ-UHFFFAOYSA-N 0.000 description 1
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000005005 perfluorohexyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- 125000005007 perfluorooctyl group Chemical group FC(C(C(C(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)* 0.000 description 1
- 125000005008 perfluoropentyl group Chemical group FC(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(F)* 0.000 description 1
- 239000005054 phenyltrichlorosilane Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- UIIMBOGNXHQVGW-UHFFFAOYSA-N sodium;hydron;carbonate Chemical compound [Na+].OC(O)=O UIIMBOGNXHQVGW-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- 125000000876 trifluoromethoxy group Chemical group FC(F)(F)O* 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- PGNIFUDNBHMTPC-UHFFFAOYSA-N undec-10-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CCCCCCCCCC=C PGNIFUDNBHMTPC-UHFFFAOYSA-N 0.000 description 1
- MZFGYVZYLMNXGL-UHFFFAOYSA-N undec-10-enoyl chloride Chemical compound ClC(=O)CCCCCCCCC=C MZFGYVZYLMNXGL-UHFFFAOYSA-N 0.000 description 1
- 229960002703 undecylenic acid Drugs 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Paints Or Removers (AREA)
Abstract
Description
本発明は、エレクトロニクス製品において、安価な汎用紫外線光源から得られる低エネルギー量の紫外線照射によって選択的に基体表面を疎水性から親水性に変換することができる有機薄膜を形成するシラン誘導体、並びに基体表面に該シラン誘導体を含有する有機薄膜形成体に関する。 The present invention relates to a silane derivative that forms an organic thin film capable of selectively converting the surface of a substrate from hydrophobic to hydrophilic by irradiation with low-energy ultraviolet rays obtained from an inexpensive general-purpose ultraviolet light source in an electronic product, and the substrate The present invention relates to an organic thin film forming body containing the silane derivative on the surface.
エレクトロニクス製品において、光リソグラフィー法などを用いてパターン形成する工程は煩雑で、大量のフォトレジスト材料や現像液などの廃棄物が排出され、環境負荷の面から改善が求められる。そこで、感光層の厚みが単分子レベルである、数nmの感光性の有機薄膜を用いたパターン形成法の開発が行われている。 In an electronic product, the process of forming a pattern using a photolithographic method or the like is complicated, and a large amount of waste materials such as a photoresist material and a developer are discharged, and improvement is required in terms of environmental load. Therefore, development of a pattern forming method using a photosensitive organic thin film having a thickness of several nanometers and a photosensitive layer thickness of a single molecule has been performed.
フェニルトリクロロシランやベンジルトリクロロシランなどのアリールシラン化合物やアルキルシラン化合物より基板上に形成した疎水性の自己組織化単分子膜に193nmの波長の遠紫外線を照射すると、珪素―炭素結合の開裂に伴い基板表面が親水化されることが記載されている。(非特許文献1)また、パーフルオロ炭化水素を含有するシラン誘導体から形成された疎水性単分子膜を172nmの波長の遠紫外線を照射すると、親水性に変換できることが開示されている。(特許文献1) When a hydrophobic self-assembled monolayer formed on an arylsilane compound or alkylsilane compound such as phenyltrichlorosilane or benzyltrichlorosilane is irradiated with far-ultraviolet light having a wavelength of 193 nm, the silicon-carbon bond is broken. It is described that the substrate surface is hydrophilized. (Non-patent document 1) Further, it is disclosed that a hydrophobic monomolecular film formed from a silane derivative containing perfluorohydrocarbon can be converted to hydrophilic when irradiated with far-ultraviolet rays having a wavelength of 172 nm. (Patent Document 1)
上記した自己組織化単分子膜は遠紫外線を照射することにより、疎水性から親水性に変換することができるが、光源として遠紫外線照射が必要である。しかし、遠紫外線光源は高価であり、安価な光源が望まれる。水銀灯は一般に光源として広く使用され、安価である。したがって安価な水銀灯から放射される紫外線に対して、高感度な感光性シラン誘導体が望まれている。 The above-described self-assembled monolayer can be converted from hydrophobic to hydrophilic by irradiating with far-ultraviolet rays, but irradiating with far-ultraviolet rays as a light source is necessary. However, the far ultraviolet light source is expensive, and an inexpensive light source is desired. Mercury lamps are generally widely used as light sources and are inexpensive. Therefore, a highly sensitive photosensitive silane derivative is desired for ultraviolet rays emitted from an inexpensive mercury lamp.
そこで、o−ニトロベンジルエステル含有シラン誘導体(特許文献2、3)、ベンジルフェニルスルフィド基含有シラン誘導体(特許文献4)、o−ニトロアニリド基含有シラン誘導体(特許文献5)などが開示されている。これらは、いずれも水銀灯照射により親水性に変化するが、まだ実用上感度などの問題があり、さらに改善を要する。 Therefore, o-nitrobenzyl ester-containing silane derivatives (Patent Documents 2 and 3), benzylphenyl sulfide group-containing silane derivatives (Patent Document 4), o-nitroanilide group-containing silane derivatives (Patent Document 5), and the like are disclosed. . All of these change to hydrophilicity by irradiation with a mercury lamp, but there are still practical problems such as sensitivity and further improvement is required.
本発明の目的は、安価な汎用紫外線光源から得られる低エネルギーの紫外線照射のよって、基板表面の疎水性の有機薄膜を親水性に変換するシラン誘導体を提供することである。 An object of the present invention is to provide a silane derivative that converts a hydrophobic organic thin film on a substrate surface into hydrophilicity by low-energy ultraviolet irradiation obtained from an inexpensive general-purpose ultraviolet light source.
本発明者らは、上記課題を解決すべく鋭意検討した結果、ベンゾイニル基を含有するシラン誘導体が、基体表面に有機薄膜を形成でき、250nm以上の紫外線照射により比較的低エネルギーでベンゾイニル基が脱離して親水性へ変換することを見出し、本発明を完成するに至った。 As a result of intensive studies to solve the above problems, the present inventors have found that a silane derivative containing a benzoinyl group can form an organic thin film on the substrate surface, and the benzoinyl group can be removed at a relatively low energy by irradiation with ultraviolet rays of 250 nm or more. It was found that it was separated and converted to hydrophilicity, and the present invention was completed.
すなわち、本発明は、ベンゾイニル基、及びハロゲン原子及び又はアルコキシ基を含有することを特徴とするシラン誘導体であり、下記一般式[1]で表されることを特徴とするシラン誘導体を提供するものである。
また、本発明は、基体表面に、本発明のシラン誘導体を含有する有機薄膜が形成されてなる有機薄膜形成体を提供する。 The present invention also provides an organic thin film forming body in which an organic thin film containing the silane derivative of the present invention is formed on a substrate surface.
本発明のシラン誘導体は疎水性であるが、安価な水銀灯光源から放射される波長250nm以上の紫外線を照射することにより、光分解して親水性に変化することができる。したがって、本発明のシラン誘導体で基体表面を薄膜を形成すると、紫外線照射により、基体表面を疎水性から親水性へ変換することができるため、親水性と疎水性の差を利用して、基体表面に種々の物質のパターニング形成が可能となる。 Although the silane derivative of the present invention is hydrophobic, it can be photodecomposed and changed to hydrophilicity by irradiation with ultraviolet rays having a wavelength of 250 nm or more emitted from an inexpensive mercury lamp light source. Therefore, when a thin film is formed on the substrate surface with the silane derivative of the present invention, the substrate surface can be converted from hydrophobic to hydrophilic by ultraviolet irradiation. In addition, various materials can be patterned.
本発明のシラン誘導体及び有機薄膜形成体を詳細に説明する。
本発明のシラン誘導体は、前記一般式[1]で表される化合物である。式中、nは1〜20の整数を表す。
The silane derivative and organic thin film forming body of the present invention will be described in detail.
The silane derivative of the present invention is a compound represented by the general formula [1]. In formula, n represents the integer of 1-20.
R1〜R10は、それぞれ独立して水素原子;フッ素原子、塩素原子、臭素原子などのハロゲン原子;メチル基、エチル基、プロピル基、ブチル基、t−ブチル基、ペンチル基、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ドデシル基など炭素数1〜20のアルキル基;フルオロメチル基、トリフルオロメチル基、2,2,2、−トリフルオロエチル基、ヘプタフルオロプロピル基、ノナフルオロブチル基、パーフルオロペンチル基、パーフルオロヘキシル基、パーフルオロオクチル基、パーフルオロノニル基、パーフルオロデシル基などの炭素数1〜20のフルオロアルキル基;メトキシ基、エトキシ基、プロポキシ基、イソプロポキシ基、ブトキシ基、t−ブトキシ基、トリフルオロメトキシ基などの置換基を有しても良いアルコキシ基;フェニル基、4−フルオロフェニル基、2−クロロフェニル基、2−ニトロフェニル基、3−メチルフェニル基、2,4−ジメトキシフェニル基、ペンタフルオロフェニル基などの置換基を有しても良いフェニル基;ベンジル基、4−クロロベンジル基、2−メチルベンジル基、2,4−ジフルオロベンジル基、ペンタフルオロベンジル基などの置換基を有しても良いベンジル基;ニトロ基、シアノ基、アミノ基、アリール基を表し、又、隣接して1−ナフチル基、2−ナフチル基、1−アンスリル基、2−アンスリル基、9−アンスリル基などの多核芳香族環;キノリニル基、イソキノリニル基、アクリジニル基、アンスロニル基などの多核複素環を形成しても良い。 R 1 to R 10 are each independently a hydrogen atom; a halogen atom such as a fluorine atom, a chlorine atom, or a bromine atom; a methyl group, an ethyl group, a propyl group, a butyl group, a t-butyl group, a pentyl group, a hexyl group, C1-C20 alkyl groups such as heptyl, octyl, nonyl, decyl, dodecyl; fluoromethyl, trifluoromethyl, 2,2,2, -trifluoroethyl, heptafluoropropyl, C1-C20 fluoroalkyl group such as nonafluorobutyl group, perfluoropentyl group, perfluorohexyl group, perfluorooctyl group, perfluorononyl group, perfluorodecyl group; methoxy group, ethoxy group, propoxy group, It may have a substituent such as isopropoxy group, butoxy group, t-butoxy group, trifluoromethoxy group, etc. Lucoxy group; may have a substituent such as phenyl group, 4-fluorophenyl group, 2-chlorophenyl group, 2-nitrophenyl group, 3-methylphenyl group, 2,4-dimethoxyphenyl group, pentafluorophenyl group Good phenyl group; benzyl group, 4-chlorobenzyl group, 2-methylbenzyl group, 2,4-difluorobenzyl group, benzyl group which may have a substituent such as pentafluorobenzyl group; nitro group, cyano group, Represents an amino group, an aryl group, and is adjacent to a polynuclear aromatic ring such as 1-naphthyl group, 2-naphthyl group, 1-anthryl group, 2-anthryl group, 9-anthryl group; quinolinyl group, isoquinolinyl group, A polynuclear heterocyclic ring such as an acridinyl group or anthronyl group may be formed.
ベンゾイニル基の具体例として、ベンゾイニル基、3´―メトキシベンゾイニル基、3´―5´―ジメトキシベンゾイニル基、3,3´,4,4´―ジメチレンジオキシベンゾイニル基、3,3´,4,4´―テトラメトキシベンゾイニル基、4´−パーフルオロオクチルベンゾイニル基などを挙げることができる。 Specific examples of the benzoinyl group include benzoinyl group, 3′-methoxybenzoinyl group, 3′-5′-dimethoxybenzoinyl group, 3,3 ′, 4,4′-dimethylenedioxybenzoinyl group, 3 , 3 ′, 4,4′-tetramethoxybenzoinyl group, 4′-perfluorooctylbenzoinyl group, and the like.
X1〜X3は、それぞれ独立して塩素原子、臭素原子などのハロゲン原子、又はメトキシ基、エトキシ基、プロポキシ基などの炭素数1〜5のアルコキシ基を表す。 X 1 to X 3 each independently represent a halogen atom such as a chlorine atom or a bromine atom, or an alkoxy group having 1 to 5 carbon atoms such as a methoxy group, an ethoxy group, or a propoxy group.
Yは、一般式[2]〜[7]で表される結合を示す。
本発明にシラン誘導体は、既知の方法により合成できる。一般式[8]で表される二重結合含有化合物をヘキサクロロ白金(IV)酸・六水和物を触媒として、ハイドロシリレーション反応で一般式[9]で表されるシラン化合物と反応させることにより製造できる。
Yが一般式[2]で表されるオキシカルボニル基の場合、二重結合含有化合物は、二重結合を有するカルボン酸とベンゾイン誘導体を原料としてエステルを生成させる。エステル化反応は、二重結合を有するカルボン酸を、塩化チオニルなどを用いる公知の方法で酸塩化物とし、ベンゾイン誘導体と第3アミンの存在下に反応させることにより製造できる。また、二重結合を有するカルボン酸とベンゾイン誘導体を、カルボジイミド類の存在下に反応させて製造することもできる。 When Y is an oxycarbonyl group represented by the general formula [2], the double bond-containing compound generates an ester using a carboxylic acid having a double bond and a benzoin derivative as raw materials. The esterification reaction can be produced by converting a carboxylic acid having a double bond into an acid chloride by a known method using thionyl chloride and the like, and reacting in the presence of a benzoin derivative and a tertiary amine. It can also be produced by reacting a carboxylic acid having a double bond and a benzoin derivative in the presence of carbodiimides.
ベンゾイン誘導体として、ベンゾイン、3´―メトキシベンゾイン、3´―5´―ジメトキシベンゾイン、3,3´,4,4´―ジメチレンジオキシベンゾイン、3,3´,4,4´―テトラメトキシベンゾイン、4´−パーフルオロオクチルベンゾインなどを挙げることができる。 Benzoin derivatives include benzoin, 3'-methoxybenzoin, 3'-5'-dimethoxybenzoin, 3,3 ', 4,4'-dimethylenedioxybenzoin, 3,3', 4,4'-tetramethoxybenzoin, Examples thereof include 4'-perfluorooctylbenzoin.
二重結合を有するカルボン酸としては、アクリル酸、メタクリル酸、4−ペンテン酸、 5−ヘキセン酸、10−ウンデセン酸などが挙げられる。 Examples of the carboxylic acid having a double bond include acrylic acid, methacrylic acid, 4-pentenoic acid, 5-hexenoic acid, and 10-undecenoic acid.
Yが一般式[4]で表されるオキシスルホニル基の場合、二重結合含有化合物は、二重結合を有するスルホン酸を、塩化チオニルなどを用いる公知の方法で酸塩化物とし、第3アミンの存在下にベンゾイン誘導体と反応させることにより製造できる。二重結合を有するスルホン酸としては、3−ブテンスルホン酸、5−ヘキセンスルホン酸、7−オクテンスルホン酸、9−デセンスルホン酸、10−ウンデセンスルホン酸などが挙げられる。 When Y is an oxysulfonyl group represented by the general formula [4], the double bond-containing compound is obtained by converting a sulfonic acid having a double bond into an acid chloride by a known method using thionyl chloride, etc. Can be produced by reacting with a benzoin derivative. Examples of the sulfonic acid having a double bond include 3-butenesulfonic acid, 5-hexenesulfonic acid, 7-octenesulfonic acid, 9-decenesulfonic acid, and 10-undecenesulfonic acid.
Yが一般式[5]で表されるオキシホスホニル基の場合、二重結合含有化合物は、二重結合を有するホスホン酸を、塩化チオニルなどを用いる公知の方法で酸塩化物とし、第3アミンの存在下にベンゾイン誘導体と反応させることにより製造できる。 When Y is an oxyphosphonyl group represented by the general formula [5], the double bond-containing compound is obtained by converting a phosphonic acid having a double bond into an acid chloride by a known method using thionyl chloride or the like. It can be produced by reacting with a benzoin derivative in the presence of an amine.
Yが一般式[6]で表されるスルホニル基の場合、二重結合含有化合物は、二重結合を有するスルフィン酸を、塩化チオニルなどを用いる公知の方法で酸塩化物とし、第3アミンの存在下にベンゾイン誘導体と反応させることにより製造できる。二重結合を有するスルフィン酸としては、3−ブテンスルフィン酸、5−ヘキセンスルフィン酸、7−オクテンスルフィン酸、9−デセンスルフィン酸、10−ウンデセンスルフィン酸などが挙げられる。 In the case where Y is a sulfonyl group represented by the general formula [6], the double bond-containing compound is obtained by converting a sulfinic acid having a double bond into an acid chloride by a known method using thionyl chloride or the like. It can be produced by reacting with a benzoin derivative in the presence. Examples of the sulfinic acid having a double bond include 3-butene sulfinic acid, 5-hexene sulfinic acid, 7-octene sulfinic acid, 9-desense sulfinic acid, and 10-unsense sulfinic acid.
Yが一般式[3]で表されるオキシアミド基の場合、例えば、ベンゾイン誘導体をN−N´−ジスクシンイミジルカーボネートと第3アミンの存在下に反応させて、生成したカーボネートとアミノ基含有シラン化合物と反応させて、ハイドロシリレーション反応を経由せずに、直接製造できる。 In the case where Y is an oxyamide group represented by the general formula [3], for example, a benzoin derivative is reacted in the presence of NN′-disuccinimidyl carbonate and a tertiary amine to form a carbonate and an amino group. It can be directly produced by reacting with a silane compound without going through a hydrosilylation reaction.
Yが一般式[7]で表されるチオエーテル基の場合、ハイドロシリレーション反応を経由せずに、チオール基を有する該当するシラン化合物をナトリウムヒドリドの存在下にα−ブロモベンゾイルフェニルケトン誘導体と反応させることにより直接に製造できる。チオール基を有する該当するシラン化合物としては、3−メルカプトプロピルトリメトキシシラン、3−メルカプトプロピルトリエトキシシランなどが挙げられる。 When Y is a thioether group represented by the general formula [7], the corresponding silane compound having a thiol group is reacted with an α-bromobenzoylphenyl ketone derivative in the presence of sodium hydride without going through a hydrosilylation reaction. Can be manufactured directly. Examples of the corresponding silane compound having a thiol group include 3-mercaptopropyltrimethoxysilane and 3-mercaptopropyltriethoxysilane.
本発明の有機薄膜形成体は、基体表面に、本発明のシラン誘導体を含有する有機薄膜が形成されてなることを特徴とする。基体としては、本発明のシラン誘導体を含有する有機薄膜を形成できるものであれば特に制限はない。例えば、ソーダガラス板などのガラス基板、ITOガラスなどの表面に電極が形成された基板、表面に絶縁層が形成された基板、シリコンウエーハ基板などのシリコン基板、セラミック基板などが挙げられる。また、有機薄膜を形成する前に、蒸留水、イオン交換水、アルコールなどの洗浄剤、オゾン、超音波、などにより洗浄した後に使用することが望ましい。 The organic thin film forming body of the present invention is characterized in that an organic thin film containing the silane derivative of the present invention is formed on the surface of a substrate. The substrate is not particularly limited as long as it can form an organic thin film containing the silane derivative of the present invention. Examples thereof include a glass substrate such as a soda glass plate, a substrate such as ITO glass on which an electrode is formed, a substrate on which an insulating layer is formed on a surface, a silicon substrate such as a silicon wafer substrate, and a ceramic substrate. Moreover, before forming an organic thin film, it is desirable to use it after washing | cleaning with cleaning agents, such as distilled water, ion-exchange water, alcohol, ozone, and an ultrasonic wave.
基体表面に、シラン誘導体を含有する有機薄膜を形成する方法は特に制限されない。例えば、シラン誘導体の溶液を基体に公知の方法で塗布し、塗膜を加熱乾燥する方法が挙げられる。塗工方法としては、例えば、ディッピング法、スピンコータ、ダイコータなどの公知の塗工装置を使用する塗工方法が挙げられる。また、シラン誘導体の蒸気下の配置して化学蒸着させる方法を利用することもできる。 The method for forming an organic thin film containing a silane derivative on the substrate surface is not particularly limited. For example, the method of apply | coating the solution of a silane derivative to a base | substrate by a well-known method, and heat-drying a coating film is mentioned. Examples of the coating method include a coating method using a known coating apparatus such as a dipping method, a spin coater, or a die coater. Moreover, the method of arrange | positioning under the vapor | steam of a silane derivative, and carrying out chemical vapor deposition can also be utilized.
シラン誘導体を溶解する溶媒としては、シラン誘導体に不活性であり、シラン誘導体を溶解するものであれば特に制限されない。例えば、ベンゼン、トルエン、キシレンなどの芳香族炭化水素類、ペンタン、ヘキサンなどの脂肪族炭化水素類、酢酸メチル、酢酸エチルなどのエステル類、ジエチルエーテル、テトラヒドロフラン、1,4−ジオキサンなどのエーテル類、アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノンなどのケトン類、メタノールなどのアルコール類、クロロホルム、ジクロロメタンなどの塩素溶剤類が挙げられる。 The solvent for dissolving the silane derivative is not particularly limited as long as it is inert to the silane derivative and dissolves the silane derivative. For example, aromatic hydrocarbons such as benzene, toluene and xylene, aliphatic hydrocarbons such as pentane and hexane, esters such as methyl acetate and ethyl acetate, ethers such as diethyl ether, tetrahydrofuran and 1,4-dioxane , Acetone, methyl ethyl ketone, methyl isobutyl ketone, ketones such as cyclohexanone, alcohols such as methanol, and chlorine solvents such as chloroform and dichloromethane.
シラン誘導体の塗膜を形成した後、溶媒を除去して成膜を完了するために、100〜200℃程度の加熱をすることが望ましい。また、多層に重なった有機分子層を除去するために。溶媒洗浄することが望ましい。得られる有機薄膜層の厚みは特に制限されないが、通常、1〜100nm程度である。 After forming the coating film of the silane derivative, it is desirable to heat at about 100 to 200 ° C. in order to remove the solvent and complete the film formation. In addition, in order to remove the organic molecular layer that overlaps the multilayer. It is desirable to wash with a solvent. The thickness of the obtained organic thin film layer is not particularly limited, but is usually about 1 to 100 nm.
得られる有機薄膜は、紫外線照射により表面の疎水性が失われて、親水性に変化する性質を持つ。この変化は、表面の水接触角を測定することにより確認できる。したがって、本シラン誘導体を含有する有機薄膜層を形成した後、マスクを用いてパターン状に紫外線を照射することにより、疎水性表面がパターン状に親水性に変化させることができる。 The resulting organic thin film has the property that the hydrophobicity of the surface is lost by irradiation with ultraviolet rays and the surface becomes hydrophilic. This change can be confirmed by measuring the water contact angle of the surface. Therefore, after forming the organic thin film layer containing the silane derivative, the hydrophobic surface can be changed to hydrophilic in a pattern by irradiating ultraviolet rays in a pattern using a mask.
形成された基板上の親水性―疎水性の差を利用して、金属触媒の表面への選択吸着によりさせて金属配線基板を製造できる。また、版胴表面の親インキ性の差を利用してオフセット印刷版を製造できる。さらに、スクリーン印刷やインクジェット印刷において、インキ受容基板上に本発明のシラン誘導体で有機薄膜を形成することにより、印字ドットの横方向への拡散を制御することができる。また、紫外線照射により生成した有機酸基を化学処理により活性化し、次いで求核性官能基を含む多価官能基含有化合物を有機酸と反応させることにより高分子グラフト基板も製造することができる。用いられる基板としては、金属配線などの電子・電気素子、DNAチップ、バイオチップなどの医療診断用素子、神経回路などの生物素子を作製するために用いられるものを使用することができる。 The metal wiring board can be manufactured by selectively adsorbing the metal catalyst on the surface using the difference between hydrophilicity and hydrophobicity on the formed board. Further, an offset printing plate can be produced by utilizing the difference in ink affinity on the surface of the plate cylinder. Furthermore, in screen printing or ink jet printing, by forming an organic thin film with the silane derivative of the present invention on an ink-receiving substrate, it is possible to control the lateral diffusion of printed dots. Moreover, a polymer graft substrate can also be produced by activating an organic acid group generated by ultraviolet irradiation by chemical treatment and then reacting a polyvalent functional group-containing compound containing a nucleophilic functional group with an organic acid. As the substrate to be used, those used for producing electronic / electrical elements such as metal wiring, medical diagnostic elements such as DNA chips and biochips, and biological elements such as neural circuits can be used.
照射装置に用いる光源としては、水銀の蒸気圧が点灯中で1〜10Paであるような、いわゆる低圧水銀灯、あるいはそれ以上の圧力を有する高圧水銀灯、さらに高い圧力の超高圧水銀灯、蛍光体が塗布された水銀灯、レーザー、蛍光管、冷陰極管、その他の放電管等を用いることができ、特に水銀灯が実用上好ましい。水銀灯の発光スペクトルは184〜450nmの範囲であり、本発明のシラン誘導体を含有する有機薄膜を効率的に光反応させるのに適している。水銀灯には、メタルハライドランプ、低圧水銀灯、高圧水銀灯、超高圧水銀灯、クセノンフラッシュランプ、ディープUVランプ、UVレーザーなどが実用化されており、発光波長領域としては上記範囲を含むので、電源サイズ、入力強度、ランプ形状などに応じて適宜選択して用いることができる。 As a light source used for the irradiation device, a so-called low-pressure mercury lamp whose mercury vapor pressure is 1 to 10 Pa during lighting, or a high-pressure mercury lamp having a pressure higher than that, an ultra-high-pressure mercury lamp with higher pressure, or a phosphor is applied. Mercury lamps, lasers, fluorescent tubes, cold cathode tubes, other discharge tubes, etc. can be used, and mercury lamps are particularly preferred in practice. The emission spectrum of the mercury lamp is in the range of 184 to 450 nm, which is suitable for efficiently photoreacting the organic thin film containing the silane derivative of the present invention. As mercury lamps, metal halide lamps, low-pressure mercury lamps, high-pressure mercury lamps, ultra-high-pressure mercury lamps, xenon flash lamps, deep UV lamps, UV lasers, etc. have been put into practical use. It can be appropriately selected and used according to the strength, lamp shape, and the like.
(作用)
本発明のシラン誘導体は、ベンゾイニル基及びハロゲン原子及び又はアルコキシ基を含有するシラン誘導体であり、基体上に本発明のシラン誘導体を含有する有機薄膜を形成してなる有機薄膜形成体は表面が疎水性であるが、250nm以上の紫外線照射により比較的高感度で有機薄膜中のベンゾイニル基が光脱離して親水性へ変化する。マスクなどを用いてパターン状に紫外線照射することにより、親水性のパターニング形成が可能となる。
(Function)
The silane derivative of the present invention is a silane derivative containing a benzoinyl group and a halogen atom and / or an alkoxy group. The surface of an organic thin film formed body formed by forming an organic thin film containing the silane derivative of the present invention on a substrate is hydrophobic. However, the benzoinyl group in the organic thin film is photodetached with a relatively high sensitivity by irradiation with ultraviolet rays of 250 nm or more, and changes to hydrophilicity. By irradiating the pattern with ultraviolet rays using a mask or the like, hydrophilic patterning can be formed.
以下、実施例により本発明を更に詳細に説明する。 Hereinafter, the present invention will be described in more detail with reference to examples.
合成例1
シラン誘導体1の合成
75mlのベンゼンに5.05g(50ミリモル)のトリエチルアミン、12.11g(50ミリモル)の3´―メトキシベンゾインを加えて溶解した攪拌溶液中に、5.93g(50ミリモル)の4−ペンテン酸クロリドを加えた。混合物をさらに4時間攪拌した。減圧下に混合物を蒸発乾固し、固形物をエーテルと水の混合物中に入れた。エーテル層を分離し、硫酸マグネシウムで乾燥した。次いで、エーテルを蒸発させて得た固形物を無水エタノールから結晶化させ、12.97gの3´―メトキシベンゾイニル―7−オクテノエートを得た。
次に、0.32g(1ミリモル)の3´―メトキシベンゾイニル―7−オクテノエート、 0.20g(1.2ミリモル)のトリエトキシシランを10mlのジオキサンに溶かし、塩化白金酸約1mgを加えて、窒素雰囲気下に3日間還流した。反応液を濃縮後、濃縮物にクロロホルムを加え、白金触媒をろ過により除去し、ろ液を濃縮してシラン誘導体1を得た。
Synthesis example 1
Synthesis of Silane Derivative 1 In a stirred solution of 5.05 g (50 mmol) of triethylamine, 12.11 g (50 mmol) of 3′-methoxybenzoin dissolved in 75 ml of benzene, 5.93 g (50 mmol) of silane derivative 1 was dissolved. 4-Pentenoic acid chloride was added. The mixture was stirred for an additional 4 hours. The mixture was evaporated to dryness under reduced pressure and the solid was placed in a mixture of ether and water. The ether layer was separated and dried over magnesium sulfate. Subsequently, the solid obtained by evaporating the ether was crystallized from absolute ethanol to obtain 12.97 g of 3'-methoxybenzoinyl-7-octenoate.
Next, 0.32 g (1 mmol) of 3′-methoxybenzoinyl-7-octenoate and 0.20 g (1.2 mmol) of triethoxysilane were dissolved in 10 ml of dioxane, and about 1 mg of chloroplatinic acid was added. And refluxed for 3 days under a nitrogen atmosphere. After the reaction solution was concentrated, chloroform was added to the concentrate, the platinum catalyst was removed by filtration, and the filtrate was concentrated to obtain silane derivative 1.
合成例2
シラン誘導体2の合成
75mlのベンゼンに5.05g(50ミリモル)のトリエチルアミン、12.11g(50ミリモル)の3´―メトキシベンゾインを加えて溶解した攪拌溶液中に、10.12g(50ミリモル)の10−ウンデセン酸クロリドを加えた。混合物をさらに4時間攪拌した。減圧下に混合物を蒸発乾固し、固形物をエーテルと水の混合物中に入れた。エーテル層を分離し、硫酸マグネシウムで乾燥した。次いで、エーテルを蒸発させて得た固形物を無水エタノールから結晶化させ、15.91gの3´―メトキシベンゾイニル―10−ウンデセノエートを得た。
次に、0.41g(1ミリモル)の3´―メトキシベンゾイニル―10−ウンデセノエート、0.20g(1.2ミリモル)のトリエトキシシランを10mlのジオキサンに溶かし、塩化白金酸約1mgを加えて、窒素雰囲気下に3日間還流した。反応液を濃縮後、濃縮物にクロロホルムを加え、白金触媒をろ過により除去し、ろ液を濃縮してシラン誘導体2を得た。
Synthesis example 2
Synthesis of Silane Derivative 2 10.12 g (50 mmol) in a stirred solution of 5.05 g (50 mmol) of triethylamine, 12.11 g (50 mmol) of 3′-methoxybenzoin dissolved in 75 ml of benzene. 10-Undecenoic acid chloride was added. The mixture was stirred for an additional 4 hours. The mixture was evaporated to dryness under reduced pressure and the solid was placed in a mixture of ether and water. The ether layer was separated and dried over magnesium sulfate. Subsequently, the solid obtained by evaporating ether was crystallized from absolute ethanol to obtain 15.91 g of 3′-methoxybenzoinyl-10-undecenoate.
Next, 0.41 g (1 mmol) of 3′-methoxybenzoinyl-10-undecenoate and 0.20 g (1.2 mmol) of triethoxysilane were dissolved in 10 ml of dioxane, and about 1 mg of chloroplatinic acid was added. And refluxed for 3 days under a nitrogen atmosphere. After the reaction solution was concentrated, chloroform was added to the concentrate, the platinum catalyst was removed by filtration, and the filtrate was concentrated to obtain silane derivative 2.
合成例3
シラン誘導体3の合成
75mlのベンゼンに5.05g(50ミリモル)のトリエチルアミン、12.11g(50ミリモル)の3´―メトキシベンゾインを加えて溶解した攪拌溶液中に、10.43g(50ミリモル)の7−オクテンスルホン酸クロリドを加えた。混合物をさらに4時間攪拌した。減圧下に混合物を蒸発乾固し、固形物をエーテルと水の混合物中に入れた。エーテル層を分離し、硫酸マグネシウムで乾燥した。次いで、エーテルを蒸発させて得た固形物を無水エタノールから結晶化させ、17.19gの3´―メトキシベンゾイニル―7−オクテンスルホネートを得た。
次に、0.41g(1ミリモル)の3´―メトキシベンゾイニル―7−オクテンスルホネート、0.20g(1.2ミリモル)のトリエトキシシランを10mlのジオキサンに溶かし、塩化白金酸約1mgを加えて、窒素雰囲気下に3日間還流した。反応液を濃縮後、濃縮物にクロロホルムを加え、白金触媒をろ過により除去し、ろ液を濃縮してシラン誘導体3を得た。
Synthesis example 3
Triethylamine 5.05 g (50 mmol) in benzene Synthesis 75ml silane derivative 3 To a stirred solution were added and dissolved 12.11g (50 mmol) 3'-methoxy benzoin, 10.43 g (50 mmol) 7-octene sulfonic acid chloride was added. The mixture was stirred for an additional 4 hours. The mixture was evaporated to dryness under reduced pressure and the solid was placed in a mixture of ether and water. The ether layer was separated and dried over magnesium sulfate. Subsequently, the solid obtained by evaporating the ether was crystallized from absolute ethanol to obtain 17.19 g of 3′-methoxybenzoinyl-7-octenesulfonate.
Next, 0.41 g (1 mmol) of 3′-methoxybenzoinyl-7-octenesulfonate and 0.20 g (1.2 mmol) of triethoxysilane were dissolved in 10 ml of dioxane, and about 1 mg of chloroplatinic acid was dissolved. In addition, the mixture was refluxed for 3 days under a nitrogen atmosphere. After the reaction solution was concentrated, chloroform was added to the concentrate, the platinum catalyst was removed by filtration, and the filtrate was concentrated to obtain silane derivative 3.
合成例4
シラン誘導体4の合成
75mlのベンゼンに5.05g(50ミリモル)のトリエチルアミン、12.11g(50ミリモル)の3´―メトキシベンゾインを加えて溶解した攪拌溶液中に、9.63g(50ミリモル)の7−オクテンスルフィン酸クロリドを加えた。混合物をさらに4時間攪拌した。減圧下に混合物を蒸発乾固し、固形物をエーテルと水の混合物中に入れた。エーテル層を分離し、硫酸マグネシウムで乾燥した。次いで、エーテルを蒸発させて得た固形物を無水エタノールから結晶化させ、15.33gの3´―メトキシベンゾイニル―7−オクテンスルフィネートを得た。
次に、0.40g(1ミリモル)の3´―メトキシベンゾイニル―7−オクテンスルフィネート、0.20g(1.2ミリモル)のトリエトキシシランを10mlのジオキサンに溶かし、塩化白金酸約1mgを加えて、窒素雰囲気下に3日間還流した。反応液を濃縮後、濃縮物にクロロホルムを加え、白金触媒をろ過により除去し、ろ液を濃縮してシラン誘導体4を得た。
Synthesis example 4
Synthesis of Silane Derivative 4 In a stirred solution of 5.05 g (50 mmol) triethylamine, 12.11 g (50 mmol) 3′-methoxybenzoin dissolved in 75 ml benzene, 9.63 g (50 mmol) was dissolved. 7-octenesulfinic acid chloride was added. The mixture was stirred for an additional 4 hours. The mixture was evaporated to dryness under reduced pressure and the solid was placed in a mixture of ether and water. The ether layer was separated and dried over magnesium sulfate. Subsequently, the solid obtained by evaporating the ether was crystallized from absolute ethanol to obtain 15.33 g of 3′-methoxybenzoinyl-7-octenesulfinate.
Next, 0.40 g (1 mmol) of 3′-methoxybenzoinyl-7-octene sulfinate, 0.20 g (1.2 mmol) of triethoxysilane was dissolved in 10 ml of dioxane, and about chloroplatinic acid was dissolved. 1 mg was added and refluxed for 3 days under a nitrogen atmosphere. After the reaction solution was concentrated, chloroform was added to the concentrate, the platinum catalyst was removed by filtration, and the filtrate was concentrated to obtain silane derivative 4.
合成例5
100mlのナスフラスコに窒素雰囲気下で0.07g60%ナトリウムハイドライド
(3.00ミリモル)を加え、フラスコを氷浴につけ、0.49g(2.50ミリモル)の3−メルカプトプロピルトリメトキシシランを20mlの乾燥テトラヒドロフランに溶解させた溶液を30分間で滴下した。次に、0.97g(2.50ミリモル)の4´−n―オクチル−α―フェニルフェナシルブロミドを10mlの乾燥テトラヒドロフランに溶解させた溶液を20分間で滴下した。その後、窒素雰囲気下で室温にて1日攪拌した後、反応溶液を濃縮し、30mlのジクロロメタンを加え、30分間攪拌した。析出した固体をろ過して除去し、ろ液を濃縮した後、カラムクロマトグラフィーで分離精製して シラン誘導体5を得た。
Synthesis example 5
Under a nitrogen atmosphere, 0.07 g 60% sodium hydride (3.00 mmol) was added to a 100 ml eggplant flask, the flask was placed in an ice bath and 0.49 g (2.50 mmol) 3-mercaptopropyltrimethoxysilane was added to 20 ml. A solution dissolved in dry tetrahydrofuran was added dropwise over 30 minutes. Next, a solution prepared by dissolving 0.97 g (2.50 mmol) of 4′-n-octyl-α-phenylphenacyl bromide in 10 ml of dry tetrahydrofuran was added dropwise over 20 minutes. Then, after stirring at room temperature for 1 day under a nitrogen atmosphere, the reaction solution was concentrated, 30 ml of dichloromethane was added, and the mixture was stirred for 30 minutes. The precipitated solid was removed by filtration, and the filtrate was concentrated and separated and purified by column chromatography to obtain silane derivative 5.
合成例6
2.91g(8.97ミリモル)の4´−n―オクチルベンゾイン、2.31g(9.02ミリモル)のN,N−ジスクシンイミジルカーボネート、2.02ml(27.0ミリモル)のトリエチルアミン、20mlのN,N−ジメチルホルムアミドを窒素置換した50mlのナスフラスコの中に入れ、室温で5時間攪拌した。その後、N,N−ジメチルホルムアミドを留去し、得られた粗製物をカラムクロマトグラフィーで精製して3.33gの4´−n―オクチルベンゾイニル−N―ヒドロキシスクシンイミジルカーボネートを得た。次にこの化合物を1.45g(3.24ミリモル)と、0.72g(3.25ミリモル)の3−(トリエトキシシリル)プロピルアミン、50mlの乾燥テトラヒドロフランを窒素置換した100mlのナスフラスコの中へいれ、室温で3時間攪拌した。反応後、溶媒を留去し、得られる粗製物をカラムクロマトグラフィーで精製して、シラン誘導体6を得た。
Synthesis Example 6
2.91 g (8.97 mmol) 4′-n-octylbenzoin, 2.31 g (9.02 mmol) N, N-disuccinimidyl carbonate, 2.02 ml (27.0 mmol) triethylamine, 20 ml of N, N-dimethylformamide was placed in a 50 ml eggplant flask purged with nitrogen and stirred at room temperature for 5 hours. Thereafter, N, N-dimethylformamide was distilled off, and the resulting crude product was purified by column chromatography to obtain 3.33 g of 4′-n-octylbenzoinyl-N-hydroxysuccinimidyl carbonate. It was. Next, 1.45 g (3.24 mmol) of this compound, 0.72 g (3.25 mmol) of 3- (triethoxysilyl) propylamine, and 50 ml of dry tetrahydrofuran in a 100 ml eggplant-type flask purged with nitrogen. The mixture was stirred and stirred at room temperature for 3 hours. After the reaction, the solvent was distilled off, and the resulting crude product was purified by column chromatography to obtain silane derivative 6.
実施例1
合成例1で得たシラン誘導体を無水トルエンに溶解して、濃度0.5重量%の溶液を得た。洗剤と共に超音波洗浄し、次いでイオン交換水、エタノールで順次洗浄した後に60℃で乾燥し、オゾン発生装置中で洗浄したソーダライムガラスをこの溶液に浸漬した後、基板を引き出し、150℃で10分間加熱熟成し、続いて、トルエン中、超音波洗浄により、多層の吸着分を除去し、シラン誘導体1の有機薄膜を成膜した。
得られた有機薄膜を形成した基板表面に、水5μlをマイクロシリンジを用いて滴下して、60秒後に、接触角測定器(協和界面科学社製CA−Z型)を用いて測定した。この基板表面に低圧水銀灯(ウシオ電機製、5mW/cm2)で紫外線を照射し、一定時間経過毎に接触角を測定した。その結果を表1に示す。
Example 1
The silane derivative obtained in Synthesis Example 1 was dissolved in anhydrous toluene to obtain a solution having a concentration of 0.5% by weight. After ultrasonic cleaning with a detergent, followed by sequential cleaning with ion exchange water and ethanol, drying at 60 ° C. and immersing soda lime glass cleaned in an ozone generator in this solution, the substrate was pulled out and 10 ° C. at 150 ° C. Then, the multilayer adsorbed component was removed by ultrasonic cleaning in toluene, and an organic thin film of the silane derivative 1 was formed.
5 microliters of water was dripped using the micro syringe at the substrate surface in which the obtained organic thin film was formed, and it measured using the contact angle measuring device (Kyowa Interface Science company make CA-Z type) 60 seconds later. The surface of the substrate was irradiated with ultraviolet rays with a low-pressure mercury lamp (manufactured by USHIO INC., 5 mW / cm 2 ), and the contact angle was measured every certain time. The results are shown in Table 1.
実施例2〜6
シラン誘導体1の代わりにシラン誘導体2〜6を用いる他は、実施例1と同様の操作を行い有機薄膜を得た。得られた有機薄膜それぞれの水接触角測定および紫外線照射による水接触角測定の変化を測定した。それらの結果を表1に併記する。
Examples 2-6
An organic thin film was obtained in the same manner as in Example 1 except that silane derivatives 2 to 6 were used instead of silane derivative 1. The change of the water contact angle measurement of each obtained organic thin film and the water contact angle measurement by ultraviolet irradiation was measured. The results are also shown in Table 1.
表1より明らかなように、本発明のシラン誘導体1〜6から得られる有機薄膜は、紫外線照射により水に対する接触角が時間とともに減少し、疎水性から親水性に変化することが分かる。 As is clear from Table 1, the organic thin film obtained from the silane derivatives 1 to 6 of the present invention has a contact angle with water that decreases with time due to ultraviolet irradiation, and changes from hydrophobic to hydrophilic.
本発明のシラン誘導体は疎水性であるが、安価な水銀灯光源から放射される波長250nm以上の紫外線を照射することにより、光分解して親水性に変化することができ、しかも高感度である。また、本発明のシラン誘導体で基体表面を薄膜を形成すると、紫外線照射により、基体表面を疎水性から親水性へ変換することができるため、親水性と疎水性の差を利用して、基体表面に種々の物質のパターニング形成が可能となる。この性質を利用して、印刷版、金属配線などの電子・電気素子、DNAチップ、バイオチップなどの医療診断用素子、神経回路などの生物素子などを作製するために用いることができる。 Although the silane derivative of the present invention is hydrophobic, it can be photodecomposed and changed to hydrophilicity by irradiation with ultraviolet rays having a wavelength of 250 nm or more emitted from an inexpensive mercury lamp light source, and has high sensitivity. Further, when a thin film is formed on the substrate surface with the silane derivative of the present invention, the substrate surface can be converted from hydrophobic to hydrophilic by ultraviolet irradiation. In addition, various materials can be patterned. Utilizing this property, it can be used to produce electronic / electric elements such as printing plates and metal wirings, medical diagnostic elements such as DNA chips and biochips, biological elements such as neural circuits, and the like.
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