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JP2007042761A - Semiconductor device substrate, semiconductor device manufacturing method, and sealing mold - Google Patents

Semiconductor device substrate, semiconductor device manufacturing method, and sealing mold Download PDF

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Publication number
JP2007042761A
JP2007042761A JP2005223534A JP2005223534A JP2007042761A JP 2007042761 A JP2007042761 A JP 2007042761A JP 2005223534 A JP2005223534 A JP 2005223534A JP 2005223534 A JP2005223534 A JP 2005223534A JP 2007042761 A JP2007042761 A JP 2007042761A
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semiconductor device
substrate
sealing
region
mold
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Shigeru Nonoyama
茂 野々山
Takao Ochi
岳雄 越智
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H10W72/884
    • H10W90/734
    • H10W90/754

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Abstract

【課題】 半導体装置用基板に対する個片基板の取れ率を向上することができて、個片基板のコスト並びに生産効率向上による生産コストの低減化を図ることが可能となり、ひいては半導体装置のコスト低減を図ることができる半導体装置用基板、および半導体装置の製造方法を提供する。
【解決手段】 配線パターン及び半導体素子搭載部を設けた複数の個片基板2をマトリックス状に配置してなる回路基板領域部3を形成した半導体装置用基板1であって、回路基板領域部3が、半導体装置用基板1の外周まで形成され、回路基板領域2を外周から囲むとともに半導体素子搭載部を有しない外周フレーム部が形成されていないことを特徴とする。この構成により、半導体装置用基板1内に対する個片基板2として使用する有効領域が拡大し、個片基板2の取れ率が向上する。
【選択図】 図2
PROBLEM TO BE SOLVED: To improve the separation rate of individual substrates with respect to a substrate for a semiconductor device, and to reduce the cost of the individual substrates and the production cost by improving the production efficiency. Provided are a substrate for a semiconductor device and a method for manufacturing the semiconductor device.
A semiconductor device substrate 1 having a circuit board region portion 3 formed by arranging a plurality of individual substrates 2 provided with wiring patterns and semiconductor element mounting portions in a matrix form. However, it is characterized in that it is formed up to the outer periphery of the substrate 1 for a semiconductor device and does not have an outer peripheral frame portion that surrounds the circuit board region 2 from the outer periphery and does not have a semiconductor element mounting portion. With this configuration, the effective area used as the individual substrate 2 with respect to the semiconductor device substrate 1 is expanded, and the yield of the individual substrate 2 is improved.
[Selection] Figure 2

Description

本発明は、半導体装置用基板、及び、この半導体装置用基板を用いた半導体装置の製造方法、並びに、この製造方法で用いる樹脂封止用の封止金型に関するものである。   The present invention relates to a semiconductor device substrate, a method of manufacturing a semiconductor device using the semiconductor device substrate, and a sealing mold for resin sealing used in the manufacturing method.

近年、配線パターンを形成した有機基板などの半導体装置用基板を用い、半導体素子を半導体装置用基板上に搭載し、ワイヤボンディングなどにより、半導体素子の電極パッドと半導体装置用基板上の配線パターンとを電気的に接続した後に封止樹脂により封止し、半導体装置用基板における封止面とは逆の面に、はんだボール等の外部用接続端子を形成したBGA(Ball Grid Array)といった半導体装置が各社より提案され、生産されている。   In recent years, a semiconductor device substrate such as an organic substrate on which a wiring pattern is formed is used. A semiconductor element is mounted on a semiconductor device substrate, and the electrode pattern of the semiconductor element and the wiring pattern on the semiconductor device substrate are bonded by wire bonding or the like. A semiconductor device such as a BGA (Ball Grid Array) in which external connection terminals such as solder balls are formed on a surface opposite to the sealing surface of the semiconductor device substrate after being electrically connected to each other with a sealing resin. Are proposed and produced by each company.

図5、図6は有機基板などから構成される従来の半導体装置用基板の平面図を示す。図5に示すように、半導体装置用基板50上には、配線パターン及び半導体素子搭載部を設けた複数の個片基板51をマトリックス状に配置してなる回路基板領域部52と、この回路基板領域部52を外周から囲むように配置された外周フレーム部53とが形成されている。なお、外周フレーム部53には半導体素子搭載部が設けられていない。   5 and 6 are plan views of a conventional semiconductor device substrate composed of an organic substrate or the like. As shown in FIG. 5, on a semiconductor device substrate 50, a circuit board region portion 52 in which a plurality of individual substrates 51 provided with wiring patterns and semiconductor element mounting portions are arranged in a matrix, and the circuit substrate. An outer peripheral frame portion 53 is formed so as to surround the region portion 52 from the outer periphery. The outer peripheral frame portion 53 is not provided with a semiconductor element mounting portion.

また、図6に示す半導体装置用基板50では、前記したと同様に配線パターン及び半導体素子搭載部を設けた複数の個片基板51をマトリックス状に配置した回路基板領域部52を、これらの回路基板領域部52間に設けた連結部54により複数連結し、さらにこれらの回路基板領域部52および連結部54の外周を外周フレーム部53で一体に支持して全体形状を短冊状に形成している(例えば、特許文献1等)。なお、図6における58は、連結部54に設けられているスリット(貫通長孔)である。   Further, in the semiconductor device substrate 50 shown in FIG. 6, the circuit board region portion 52 in which a plurality of individual substrates 51 provided with wiring patterns and semiconductor element mounting portions are arranged in a matrix form as described above is provided for these circuits. A plurality of connecting portions 54 provided between the substrate region portions 52 are connected, and the outer periphery of the circuit board region portion 52 and the connecting portion 54 is integrally supported by the outer peripheral frame portion 53 to form an overall shape in a strip shape. (For example, Patent Document 1). In addition, 58 in FIG. 6 is a slit (through long hole) provided in the connecting portion 54.

図5、図6および図7に示すように、従来の半導体装置用基板50では、外周フレーム部53が、回路基板領域部52を連結するための支持体であるだけでなく、後述するように、金型61、62から半導体装置用基板50に形成した封止領域57の封止樹脂が抜け易くするために、封止領域57の外周端57aを斜めに形成するための領域や、封止樹脂が半導体装置用基板の周辺に漏れ出ることを防止するための領域、封止樹脂を金型61、62内に導入するためのゲート口用の形成領域等としても利用されている。   As shown in FIGS. 5, 6, and 7, in the conventional semiconductor device substrate 50, the outer peripheral frame portion 53 is not only a support for connecting the circuit board region portion 52, but will be described later. In order to facilitate removal of the sealing resin in the sealing region 57 formed on the semiconductor device substrate 50 from the molds 61 and 62, a region for forming the outer peripheral end 57a of the sealing region 57 obliquely, It is also used as a region for preventing the resin from leaking out to the periphery of the substrate for a semiconductor device, a formation region for a gate port for introducing the sealing resin into the molds 61 and 62, and the like.

図7は上記した半導体装置用基板50と、樹脂封止用の金型61、62を用いて半導体装置の製造工程の1つである封止工程を行った状態の断面構造を示している(半導体素子56が搭載される個片基板51の数は実際にはもっと多くあるが、図7においては簡略的に示している)。この図7における57は、上金型61の下面部に形成された凹部からなる封止領域で、この封止領域57は半導体装置用基板50上に形成される。また、下金型62には半導体装置用基板50が搭載される凹部が形成され、この凹部に半導体装置用基板50が搭載される。また、56は半導体素子である。   FIG. 7 shows a cross-sectional structure in a state where a sealing process, which is one of the semiconductor device manufacturing processes, is performed using the semiconductor device substrate 50 and the molds 61 and 62 for resin sealing ( The number of individual substrates 51 on which the semiconductor elements 56 are mounted is actually larger, but is shown in a simplified manner in FIG. In FIG. 7, reference numeral 57 denotes a sealing region formed of a recess formed in the lower surface portion of the upper mold 61, and the sealing region 57 is formed on the semiconductor device substrate 50. The lower mold 62 is formed with a recess in which the semiconductor device substrate 50 is mounted, and the semiconductor device substrate 50 is mounted in the recess. Reference numeral 56 denotes a semiconductor element.

図7に示すように、半導体装置用基板50上に形成される封止領域57は、下金型62に載せられる半導体装置用基板50よりも小さく形成されている。また、従来の半導体装置用基板50には封止領域57のない外周フレーム部53が存在する。これにより、半導体装置用基板50の実際の厚みが設計上の厚みよりも薄くて封止領域57外に封止樹脂が漏れ出た場合でも、封止樹脂の漏れを外周フレーム部53上のみとすることができて、金型61、62内への封止樹脂の漏れを防止できるよう構成している。   As shown in FIG. 7, the sealing region 57 formed on the semiconductor device substrate 50 is formed smaller than the semiconductor device substrate 50 placed on the lower mold 62. The conventional semiconductor device substrate 50 has an outer peripheral frame portion 53 without a sealing region 57. As a result, even when the actual thickness of the semiconductor device substrate 50 is thinner than the designed thickness and the sealing resin leaks out of the sealing region 57, the sealing resin leaks only on the outer peripheral frame portion 53. It is possible to prevent the sealing resin from leaking into the molds 61 and 62.

また、簡略的に上記したが、図7に示すように、金型61、62から半導体装置用基板50に形成した封止領域57の封止樹脂が抜けやすくするために、封止領域57の外周端57aを斜めに形成する場合が存在する。すなわち、その場合に、外周フレーム部53が存在することで、封止領域57の外周端57aを斜めに形成するための領域を確保することが可能となる。
特開平9−129781号公報
In addition, as described above, as shown in FIG. 7, in order to facilitate removal of the sealing resin in the sealing region 57 formed on the semiconductor device substrate 50 from the molds 61 and 62, There is a case where the outer peripheral edge 57a is formed obliquely. That is, in that case, the presence of the outer peripheral frame portion 53 makes it possible to secure a region for forming the outer peripheral end 57a of the sealing region 57 obliquely.
JP 9-129781 A

しかしながら、上記従来の半導体装置用基板を用いた半導体装置の製造方法では、上記したように封止領域57の外周端57aを斜めに形成するための領域を確保するなどの理由により、外周フレーム部53の領域が増加しており、このように外周フレーム部53の領域が増加することで、半導体装置用基板50に対する個片基板51として使用する有効領域が小さくなり、半導体装置用基板50に対する個片基板51の取れ率が減少し、その結果、個片基板51に対するコストが上昇するという課題があった。また、半導体装置用基板50に対する個片基板51の取れ率が減少することで、半導体装置を生産するための効率が低下し、半導体装置の生産コストを上昇する原因となっていた。この傾向は、個片基板51のサイズが小さくなるに従い、特に顕著に発生する傾向にあり、半導体装置のコスト低減化の取り組みへの大きな障害になっている。   However, in the above-described conventional method for manufacturing a semiconductor device using a substrate for a semiconductor device, the outer peripheral frame portion is provided for the purpose of securing a region for forming the outer peripheral end 57a of the sealing region 57 obliquely as described above. 53, and the area of the outer peripheral frame portion 53 is increased in this way, the effective area to be used as the individual substrate 51 with respect to the semiconductor device substrate 50 is reduced, and the area with respect to the semiconductor device substrate 50 is reduced. There is a problem that the yield of the single substrate 51 is reduced, and as a result, the cost for the single substrate 51 is increased. In addition, since the yield of the individual substrate 51 with respect to the semiconductor device substrate 50 is reduced, the efficiency for producing the semiconductor device is reduced, which increases the production cost of the semiconductor device. This tendency tends to be particularly noticeable as the size of the individual substrate 51 becomes smaller, and is a major obstacle to efforts to reduce the cost of semiconductor devices.

本発明は、上記従来の課題を解決するもので、半導体装置用基板に対する個片基板の取れ率を向上することができて、個片基板のコスト並びに生産効率向上による生産コストの低減化を図ることが可能となり、ひいては半導体装置のコスト低減を図ることができる半導体装置用基板、および半導体装置の製造方法、および封止金型を提供することを目的とする。   The present invention solves the above-described conventional problems, can improve the yield of individual substrates relative to the substrate for a semiconductor device, and reduces the production cost by improving the cost and production efficiency of the individual substrates. An object of the present invention is to provide a semiconductor device substrate, a semiconductor device manufacturing method, and a sealing mold that can reduce the cost of the semiconductor device.

上記目的を達成するために、本発明の半導体装置用基板は、配線パターン及び半導体素子搭載部を設けた複数の個片基板をマトリックス状に配置してなる回路基板領域部を形成した半導体装置用基板であって、回路基板領域部が、半導体装置用基板の外周まで形成されており、半導体素子搭載部を有しない外周フレーム部が回路基板領域部の外周に形成されていないことを特徴とする。   In order to achieve the above object, a substrate for a semiconductor device according to the present invention is for a semiconductor device in which a circuit board region is formed by arranging a plurality of individual substrates provided with wiring patterns and semiconductor element mounting portions in a matrix. A circuit board region portion is formed up to an outer periphery of a substrate for a semiconductor device, and an outer peripheral frame portion having no semiconductor element mounting portion is not formed on the outer periphery of the circuit substrate region portion. .

この構成により、回路基板領域部を半導体装置用基板の外周まで形成し、半導体装置用基板に外周フレーム部が形成されていないので、半導体装置用基板内に対する個片基板として使用する有効領域が拡大し、個片基板の取れ率が向上する。   With this configuration, the circuit board region portion is formed up to the outer periphery of the semiconductor device substrate, and the outer peripheral frame portion is not formed on the semiconductor device substrate, so that the effective region used as a single substrate within the semiconductor device substrate is expanded. In addition, the yield of the individual substrate is improved.

また、本発明の半導体装置の製造方法は、配線パターン及び半導体素子搭載部を設けた複数の個片基板をマトリックス状に配置してなる回路基板領域部を形成した半導体装置用基板として、前記回路基板領域部が、半導体装置用基板の外周まで形成されたものを採用し、前記半導体装置用基板上に半導体素子を搭載し、半導体素子上の電極パッドと個片基板上の配線パターンとを電気的に接続した後、封止樹脂にて封止する際に、封止領域が半導体装置用基板の外周四辺よりも大きくなるように形成することを特徴とする。   Also, the method for manufacturing a semiconductor device according to the present invention provides the circuit as a semiconductor device substrate having a circuit board region formed by arranging a plurality of individual substrates provided with wiring patterns and semiconductor element mounting portions in a matrix. The substrate region portion is formed up to the outer periphery of the semiconductor device substrate, the semiconductor element is mounted on the semiconductor device substrate, and the electrode pads on the semiconductor element and the wiring pattern on the individual substrate are electrically connected. After the connection, the sealing region is formed so as to be larger than the outer peripheral four sides of the semiconductor device substrate when sealing with a sealing resin.

この方法により、前記半導体装置用基板を用いて、半導体装置用基板上に、良好かつ効率よく半導体装置を製造することができる。
なお、前記半導体装置の製造方法としては、半導体装置用基板の少なくとも一辺において、封止領域が回路基板領域部よりも大きくなるように形成したり、半導体装置用基板の回路基板領域部の外周四辺において、封止領域が回路基板領域部よりも大きくなるように形成したり、半導体装置用基板を、複数の回路基板領域部と、回路基板領域同士を連結する連結部とから構成し、半導体装置用基板の回路基板領域部の少なくとも一辺において、封止領域が回路基板領域よりも大きくなるように形成したりする。
By this method, a semiconductor device can be manufactured satisfactorily and efficiently on the semiconductor device substrate using the semiconductor device substrate.
The semiconductor device manufacturing method includes forming the sealing region larger than the circuit substrate region portion on at least one side of the semiconductor device substrate, or forming the four peripheral sides of the circuit substrate region portion of the semiconductor device substrate. In the semiconductor device, the sealing region is formed to be larger than the circuit board region portion, or the semiconductor device substrate is constituted by a plurality of circuit board region portions and a connecting portion for connecting the circuit substrate regions to each other, and the semiconductor device The sealing region is formed to be larger than the circuit substrate region on at least one side of the circuit substrate region portion of the circuit board.

また、封止樹脂にて封止する工程を、上金型と下金型とからなる封止金型を用いて行い、この際に、半導体装置用基板と下金型との間、および上金型と下金型との間に、封止樹脂の漏れを防止するシール材を介装することを特徴とする。   In addition, the step of sealing with the sealing resin is performed using a sealing mold including an upper mold and a lower mold, and at this time, between the substrate for the semiconductor device and the lower mold, and above A sealing material for preventing leakage of the sealing resin is interposed between the mold and the lower mold.

この方法により、封止樹脂工程においてシール材が上金型と下金型との接合面に密着し、封止樹脂が封止領域外に漏れ出ることを防止することができる。
また、半導体装置を製造する封止工程で用いる封止金型としては、封止樹脂を注入させる上金型の封止領域が、半導体装置用基板を搭載する下金型の半導体装置用基板搭載領域よりも大きいものを用いるとよい。また、この場合に、上金型に、封止樹脂を封止金型内の封止領域に導入するゲート口が垂直方向に貫通して形成することで、封止樹脂を封止領域に良好に導入することができる。
By this method, it is possible to prevent the sealing material from coming into close contact with the joint surface between the upper mold and the lower mold in the sealing resin process, and the sealing resin from leaking out of the sealing region.
Moreover, as a sealing mold used in a sealing process for manufacturing a semiconductor device, a sealing region of an upper mold for injecting a sealing resin is mounted on a lower mold for mounting a semiconductor device substrate. A larger one than the region may be used. Further, in this case, the sealing resin is excellent in the sealing region by forming a gate port through which the sealing resin is introduced into the sealing region in the sealing die in the vertical direction. Can be introduced.

本発明の半導体装置用基板によれば、配線パターン及び半導体素子搭載部を設けた複数の個片基板をマトリックス状に配置してなる回路基板領域部を形成した半導体装置用基板において、回路基板領域部を、半導体装置用基板の外周まで形成し、半導体素子搭載部を有しない外周フレーム部が回路基板領域部の外周に形成されていない構成とすることにより、半導体装置用基板内に対する個片基板として使用する有効領域が拡大し、個片基板の取れ率の向上、並びに個片基板のコスト低減が可能となる。   According to the substrate for a semiconductor device of the present invention, in the substrate for a semiconductor device in which a circuit board region portion formed by arranging a plurality of individual substrates provided with wiring patterns and semiconductor element mounting portions in a matrix is formed, The substrate is formed up to the outer periphery of the substrate for a semiconductor device, and the outer peripheral frame portion without the semiconductor element mounting portion is not formed on the outer periphery of the circuit substrate region portion. As a result, the effective area to be used can be expanded, the yield of the individual substrate can be improved, and the cost of the individual substrate can be reduced.

また、この半導体装置用基板を用いて、封止樹脂にて封止する際に、封止領域が半導体装置用基板の外周四辺よりも大きくなるように形成することにより、前記半導体装置用基板から半導体装置を高い取れ率で良好に製造することができ、半導体装置の製造工程での生産効率が向上し、半導体装置の生産コストの低減が可能となる。   In addition, when the semiconductor device substrate is used for sealing with a sealing resin, the sealing region is formed to be larger than the outer peripheral four sides of the semiconductor device substrate. The semiconductor device can be manufactured well with a high yield, the production efficiency in the manufacturing process of the semiconductor device is improved, and the production cost of the semiconductor device can be reduced.

また、封止樹脂にて封止する工程時に、半導体装置用基板と下金型との間、および上金型と下金型との間に、封止樹脂の漏れを防止するシール材を介装することにより、外周フレーム部を有しない半導体装置用基板を用いた場合でも、封止樹脂が封止領域外に漏れ出ることを良好に防止することができる。   In addition, a sealing material that prevents leakage of the sealing resin is interposed between the semiconductor device substrate and the lower mold and between the upper mold and the lower mold during the sealing process with the sealing resin. By mounting, it is possible to satisfactorily prevent the sealing resin from leaking out of the sealing region even when a semiconductor device substrate having no outer peripheral frame portion is used.

また、ゲート口が垂直方向に貫通して形成されている上金型を用いることで、外周フレーム部を有しない半導体装置用基板を用いた場合でも、封止樹脂を封止領域に良好に導入することができる。   In addition, by using an upper die that has a gate opening formed in the vertical direction, even when a semiconductor device substrate that does not have an outer peripheral frame portion is used, the sealing resin is satisfactorily introduced into the sealing region. can do.

以下、本発明の実施の形態に係る半導体装置用基板およびこの半導体装置用基板を用いた半導体装置の製造方法について、図面を参照しながら説明する。
図1、図2は、それぞれ本発明の実施の形態に係る半導体装置用基板の平面図である。
Hereinafter, a substrate for a semiconductor device according to an embodiment of the present invention and a method for manufacturing a semiconductor device using the substrate for a semiconductor device will be described with reference to the drawings.
1 and 2 are plan views of a substrate for a semiconductor device according to an embodiment of the present invention, respectively.

図1における1は半導体装置用基板で、配線パターン及び半導体素子搭載部を設けた複数の個片基板2をマトリックス状に配置した回路基板領域部3が形成されている。同図に示すように、この半導体装置用基板1においては、回路基板領域部3が、半導体装置用基板1の外周まで形成されている。すなわち、従来の半導体装置用基板50のように回路基板領域部52を外周から囲むとともに半導体素子搭載部を有しない外周フレーム部53(図5参照)が、この半導体装置用基板1には形成されていない。   In FIG. 1, reference numeral 1 denotes a substrate for a semiconductor device, in which a circuit board region portion 3 is formed in which a plurality of individual substrates 2 provided with wiring patterns and semiconductor element mounting portions are arranged in a matrix. As shown in the figure, in this semiconductor device substrate 1, the circuit board region portion 3 is formed up to the outer periphery of the semiconductor device substrate 1. That is, an outer peripheral frame portion 53 (see FIG. 5) that surrounds the circuit board region portion 52 from the outer periphery and does not have a semiconductor element mounting portion as in the conventional semiconductor device substrate 50 is formed on the semiconductor device substrate 1. Not.

また、図2における1は半導体装置用基板の他の例を示すもので、この半導体装置用基板1においては、配線パターン及び半導体素子搭載部を設けた複数の個片基板2をマトリックス状に配置した複数の回路基板領域部3と、これらの複数の回路基板領域部3を連結する連結部4とが設けられている。この半導体装置用基板1においても、半導体装置用基板の外周四辺の外周フレーム部53(図5参照)を削減し(設けられておらず)、回路基板領域部3を半導体装置用基板1の外周まで形成している。なお、図2における5は、連結部4に設けられているスリット(貫通長孔)である。   Further, reference numeral 1 in FIG. 2 shows another example of a semiconductor device substrate. In this semiconductor device substrate 1, a plurality of individual substrates 2 provided with wiring patterns and semiconductor element mounting portions are arranged in a matrix. A plurality of circuit board region portions 3 and a connecting portion 4 for connecting the plurality of circuit board region portions 3 are provided. Also in this semiconductor device substrate 1, the peripheral frame portion 53 (see FIG. 5) on the four outer sides of the semiconductor device substrate is reduced (not provided), and the circuit board region portion 3 is replaced with the outer periphery of the semiconductor device substrate 1. Has formed up to. In addition, 5 in FIG. 2 is a slit (through long hole) provided in the connecting portion 4.

本発明の半導体装置用基板1によれば、図5、図6に示した従来の半導体装置用基板50と比較すると、回路基板領域部3を半導体装置用基板1の外周まで形成しているので、図1、図2に示すように、半導体装置用基板1に対する個片基板2の領域が拡大し、個片基板2の取れ率が向上していることがわかる。   According to the semiconductor device substrate 1 of the present invention, compared to the conventional semiconductor device substrate 50 shown in FIGS. 5 and 6, the circuit board region portion 3 is formed to the outer periphery of the semiconductor device substrate 1. As shown in FIGS. 1 and 2, it can be seen that the area of the individual substrate 2 with respect to the semiconductor device substrate 1 is enlarged, and the yield of the individual substrate 2 is improved.

次に、上記半導体装置用基板1を用いた半導体装置の製造方法について図面を参照しながら説明する。
図3(a)は上記の半導体装置用基板1に半導体素子を搭載する工程を説明する断面図、図3(b)は半導体素子上の電極パッドと個片基板上の配線パターンとを電気的に接続する工程を説明する断面図、図3(c)は上記半導体装置用基板において、搭載した複数の半導体素子及び、半導体素子と個片基板との接続部を、一括して封止樹脂にて封止した工程を説明する断面図、図3(d)は上記半導体装置用基板において、封止樹脂にて封止した領域を個片に分割する工程を説明する断面図、図3(e)は個片基板2を分割して最終的に半導体装置を形成した工程を説明する断面図である。なお、図3(a)〜(e)は図2に示した半導体装置用基板1を用いて半導体装置を製造する方法を、半導体装置用基板1の長手方向(長辺方向)に沿った線で切断した状態を概略的に示している。
Next, a method for manufacturing a semiconductor device using the semiconductor device substrate 1 will be described with reference to the drawings.
FIG. 3A is a cross-sectional view for explaining a process of mounting a semiconductor element on the semiconductor device substrate 1, and FIG. 3B is an electrical diagram showing an electrode pad on the semiconductor element and a wiring pattern on the individual substrate. FIG. 3C is a cross-sectional view for explaining the process of connecting to the semiconductor device substrate. In the semiconductor device substrate, a plurality of mounted semiconductor elements and connection portions between the semiconductor elements and the individual substrates are collectively used as a sealing resin. FIG. 3D is a cross-sectional view illustrating a step of dividing the region sealed with the sealing resin into individual pieces in the substrate for a semiconductor device, and FIG. ) Is a cross-sectional view illustrating a process of dividing the individual substrate 2 and finally forming a semiconductor device. 3A to 3E show a method of manufacturing a semiconductor device using the semiconductor device substrate 1 shown in FIG. 2 along the longitudinal direction (long side direction) of the semiconductor device substrate 1. The state cut | disconnected by is shown schematically.

図3(a)に示すように、まず、半導体装置用基板1の半導体素子搭載領域3に、導電性或いは非導電性のペーストやフィルム等を塗布或いは貼り付け、この上に半導体素子6を搭載する。なお、図3(a)における7は個片基板2に設けられた配線パターンである。   As shown in FIG. 3A, first, a conductive or non-conductive paste or film is applied or pasted on the semiconductor element mounting region 3 of the semiconductor device substrate 1, and the semiconductor element 6 is mounted thereon. To do. Note that reference numeral 7 in FIG. 3A denotes a wiring pattern provided on the individual substrate 2.

次に、図3(b)に示すように、ワイヤボンディング工法等を用い、金やアルミニウム等の接続配線8を使用して、半導体素子6上の電極パッドと半導体装置用基板1の個片基板2上に形成された配線パターン7とを電気的に接続する。   Next, as shown in FIG. 3B, the electrode pads on the semiconductor element 6 and the individual substrate of the semiconductor device substrate 1 are formed by using the wire bonding method or the like and using the connection wiring 8 such as gold or aluminum. 2 is electrically connected to the wiring pattern 7 formed on the substrate 2.

次に、図3(c)に示すように、エポキシ樹脂などの封止樹脂9を用いて、半導体装置用基板1に搭載した半導体素子6及び、半導体素子6と個片基板2上の配線パターン7との接続部を封止する。   Next, as shown in FIG. 3C, the semiconductor element 6 mounted on the semiconductor device substrate 1 and the wiring pattern on the semiconductor element 6 and the individual substrate 2 using a sealing resin 9 such as an epoxy resin. 7 is sealed.

この樹脂封止工程は、図4に示すような金型11、12(上金型11および下金型12)を用いて行い、これらの金型11、12によって形成される封止領域13の外周部分が半導体装置用基板1よりも大きい形状とされている。すなわち、封止樹脂9(図3(c)参照)を注入させる上金型11の封止領域13が、下金型12における半導体装置用基板1を搭載する領域よりも大きく形成されている。   This resin sealing step is performed using molds 11 and 12 (upper mold 11 and lower mold 12) as shown in FIG. 4, and the sealing region 13 formed by these molds 11 and 12 is used. The outer peripheral portion has a shape larger than that of the semiconductor device substrate 1. That is, the sealing region 13 of the upper mold 11 into which the sealing resin 9 (see FIG. 3C) is injected is formed larger than the region in which the semiconductor device substrate 1 is mounted in the lower mold 12.

そして、上金型11の封止領域13の外周端11aとなる箇所を、金型11、12から半導体装置用基板1に形成した封止樹脂9が抜け易くするために斜めに形成しているが、この封止領域13の外周端11aの斜めに形成した箇所が、平面視して、半導体装置用基板1(すなわち、回路基板領域部3)よりも、外側となる位置に形成されている。   And the part used as the outer periphery end 11a of the sealing area | region 13 of the upper metal mold | die 11 is formed diagonally in order to make the sealing resin 9 formed in the board | substrate 1 for semiconductor devices from the metal mold | dies 11 and 12 fall easily. However, the obliquely formed portion of the outer peripheral end 11a of the sealing region 13 is formed at a position outside the semiconductor device substrate 1 (that is, the circuit board region portion 3) in plan view. .

また、図4に示すように、樹脂封止の際には、半導体装置用基板1の下にテープ状のシートなどの弾性を有するシール材14が載置され、樹脂が注入された際に、外部に樹脂が漏れ出ることを防止している。また、封止樹脂を注入するためのゲート口15が、上金型11において垂直方向に貫通するように加工されて形成されている。   Also, as shown in FIG. 4, when resin sealing, a sealing material 14 having elasticity such as a tape-like sheet is placed under the semiconductor device substrate 1, and when resin is injected, The resin is prevented from leaking outside. Further, the gate port 15 for injecting the sealing resin is formed by being processed so as to penetrate the upper mold 11 in the vertical direction.

これらの金型11、12を用いて、シール材14を介して、下金型12上に半導体装置用基板1を搭載させた状態で、上金型11の下面が、シール材14に密着するように、上金型11を下金型12に向けて下降させ、この後、ゲート口15を通して封止樹脂9を封止領域13に注入して封止する。   Using these molds 11 and 12, the lower surface of the upper mold 11 is in close contact with the seal material 14 in a state where the semiconductor device substrate 1 is mounted on the lower mold 12 via the seal material 14. As described above, the upper mold 11 is lowered toward the lower mold 12, and then the sealing resin 9 is injected into the sealing region 13 through the gate port 15 and sealed.

これにより、封止領域13に封止樹脂9が形成される。この場合に、半導体装置用基板1には従来設けられていたような外周フレーム部53が形成されていないが、平面視して、半導体装置用基板1、すなわち、回路基板領域部3よりも外側となる位置に封止領域13の外周端11aとなる斜めに形成した箇所が設けられているので、金型11、12から半導体装置用基板1に形成した封止樹脂9は容易に抜けることとなる。また、半導体装置用基板1の下に載置したシール材14により、樹脂封止の際には、シール材14が上金型11と下金型12との接合面に密着するので、従来の半導体装置用基板50に設けられていたような外周フレーム部53を有していないにもかかわらず、封止樹脂9が封止領域13から外側に漏れ出ることを良好に防止することができる。また、従来の樹脂封止用の金型では外周フレーム部53に水平方向につながるようにゲート口が形成されていたが、上記実施の形態では、上金型11から封止領域13に上方から直接繋がるようにゲート口15が形成されているので、従来の半導体装置用基板50に設けられていたような外周フレーム部53を有していないにもかかわらず、封止領域13に封止樹脂9を良好に導入できる。   Thereby, the sealing resin 9 is formed in the sealing region 13. In this case, the outer peripheral frame portion 53 as conventionally provided is not formed in the semiconductor device substrate 1, but the semiconductor device substrate 1, that is, outside the circuit substrate region portion 3 in plan view. Since an obliquely formed portion serving as the outer peripheral edge 11a of the sealing region 13 is provided at the position where the sealing resin 13 is formed, the sealing resin 9 formed on the semiconductor device substrate 1 can be easily removed from the molds 11 and 12. Become. In addition, the sealing material 14 placed under the semiconductor device substrate 1 causes the sealing material 14 to be in close contact with the bonding surface between the upper mold 11 and the lower mold 12 during resin sealing. Even though the outer peripheral frame portion 53 as provided in the semiconductor device substrate 50 is not provided, it is possible to satisfactorily prevent the sealing resin 9 from leaking outside from the sealing region 13. Further, in the conventional mold for resin sealing, the gate port is formed so as to be connected to the outer peripheral frame portion 53 in the horizontal direction. However, in the above embodiment, the upper mold 11 to the sealing region 13 from above. Since the gate port 15 is formed so as to be directly connected, the sealing resin is formed in the sealing region 13 even though it does not have the outer peripheral frame portion 53 as provided in the conventional semiconductor device substrate 50. 9 can be introduced satisfactorily.

その後、封止樹脂9が硬化してから、固定用テープを用いたり、真空吸着方法を用いたりして、固定テーブル上に、樹脂封止した半導体装置用基板1を固定し、ブレード等の切断刃16を用いて、半導体装置用基板1の外周部の封止樹脂部分及び、個片基板2の境界部を個片カットする。これにより、個片に分割された半導体装置20を形成する。   Thereafter, after the sealing resin 9 is cured, the resin-sealed semiconductor device substrate 1 is fixed on a fixing table by using a fixing tape or a vacuum suction method, and cutting a blade or the like. Using the blade 16, the sealing resin portion on the outer peripheral portion of the semiconductor device substrate 1 and the boundary portion of the individual substrate 2 are cut into individual pieces. Thereby, the semiconductor device 20 divided into pieces is formed.

なお、必要に応じて、半導体装置20を個片に分割する前に、半導体装置用基板1の封止面とは逆の面に、はんだボール等の外部接続端子を形成する。
上記の構成によれば、半導体装置用基板1として、その回路基板領域部3を半導体装置用基板1の外周まで形成し、半導体装置用基板1に外周フレーム部を形成していないので、半導体装置用基板1内に対する個片基板2として使用する有効領域が拡大し、個片基板の取れ率が向上する。また、これにより、個片基板2のコスト低減が可能となる。
If necessary, before the semiconductor device 20 is divided into individual pieces, external connection terminals such as solder balls are formed on the surface opposite to the sealing surface of the semiconductor device substrate 1.
According to the above configuration, the circuit board region portion 3 is formed as the semiconductor device substrate 1 up to the outer periphery of the semiconductor device substrate 1, and the outer peripheral frame portion is not formed on the semiconductor device substrate 1. The effective area used as the individual substrate 2 with respect to the interior of the substrate 1 is expanded, and the yield of the individual substrate is improved. Thereby, the cost of the individual substrate 2 can be reduced.

また、この半導体装置用基板1を用いて半導体装置を製造方法するに際して、半導体装置用基板1において、金型11、12を用いて、封止領域13が回路基板領域部3よりも大きくなるように形成することにより、金型11、12から封止樹脂9を容易に抜くことができて、支障無くかつ効率よく、個片に分割された半導体装置20を製造することができる。   Further, when a semiconductor device is manufactured using the semiconductor device substrate 1, the sealing region 13 is made larger than the circuit substrate region portion 3 in the semiconductor device substrate 1 using the molds 11 and 12. Thus, the sealing resin 9 can be easily removed from the molds 11 and 12, and the semiconductor device 20 divided into individual pieces can be manufactured without any trouble.

なお、封止領域13が回路基板領域部3よりも大きくなるように形成する箇所は、半導体装置用基板1の回路基板領域部3の外周四辺において、封止領域13が回路基板領域部3よりも大きくなるように形成することで、最も、封止樹脂9を容易に抜くことができる利点がある。しかし、これに限るものではなく、半導体装置用基板1の回路基板領域部3の少なくとも一辺において、封止領域13が回路基板領域3よりも大きくなるように形成すれば、封止領域13と回路基板領域部3とが平面視して同じものと比較すると、封止樹脂9を容易に抜くことができる効果がある。また、図3(a)〜(e)においては、図2に示すような半導体装置用基板1に連結部4を有する場合を簡略的に図示したが、これに限るものではなく、図1に示すように、連結部4を有しない半導体装置用基板1にも同様の構成を適用できることはもちろんである。また、図3(c)〜(e)においては、連結部4に対応する箇所には封止樹脂9が導入されていない場合を示したが、これに限るものではない。   Note that the sealing region 13 is formed so that the sealing region 13 is larger than the circuit board region portion 3. In addition, there is an advantage that the sealing resin 9 can be most easily removed. However, the present invention is not limited to this. If the sealing region 13 is formed to be larger than the circuit substrate region 3 on at least one side of the circuit board region portion 3 of the semiconductor device substrate 1, the sealing region 13 and the circuit are formed. When compared with the same substrate substrate portion 3 in plan view, the sealing resin 9 can be easily removed. 3A to 3E, the case where the connecting portion 4 is provided on the semiconductor device substrate 1 as shown in FIG. 2 is illustrated in a simplified manner, but the present invention is not limited to this. As shown, it is needless to say that the same configuration can be applied to the semiconductor device substrate 1 that does not have the connecting portion 4. 3C to 3E show the case where the sealing resin 9 is not introduced into the portion corresponding to the connecting portion 4, the present invention is not limited to this.

本発明の半導体装置用基板および半導体装置の製造方法は、配線パターン及び半導体素子搭載部を設けた複数の個片基板をマトリックス状に配置してなる回路基板領域部を形成した半導体装置用基板、ならびにこの半導体装置用基板を用いた半導体装置の製造方法として有用である。   A substrate for a semiconductor device and a method for manufacturing the semiconductor device according to the present invention include a substrate for a semiconductor device in which a circuit board region is formed by arranging a plurality of individual substrates provided with wiring patterns and semiconductor element mounting portions in a matrix, In addition, it is useful as a method for manufacturing a semiconductor device using this substrate for a semiconductor device.

本発明の実施の形態に係る半導体装置用基板の平面図The top view of the board | substrate for semiconductor devices which concerns on embodiment of this invention 同実施の形態に係る他の半導体装置用基板の平面図Plan view of another semiconductor device substrate according to the embodiment それぞれ同半導体装置用基板を用いた半導体装置の製造方法の各工程を示す断面図(半導体装置用基板の長手方向(長辺方向)に沿った線で切断した状態を概略的に示している)で、(a)は図2に示す半導体装置用基板に半導体素子を搭載する工程を説明する断面図、(b)は同半導体装置用基板に載せた半導体素子上の電極パッドと個片基板上の配線パターンとを電気的に接続する工程を説明する断面図、(c)は同半導体装置用基板において、搭載した複数の半導体素子及び、半導体素子と個片基板との接続部を、一括して封止樹脂にて封止した工程を説明する断面図、(d)は同半導体装置用基板において、封止樹脂にて封止した領域を個片に分割する工程を説明する断面図、(e)は個片基板を分割して最終的に半導体装置を形成した工程を説明する断面図Sectional drawing which shows each process of the manufacturing method of the semiconductor device which respectively used the board | substrate for semiconductor devices (The state cut | disconnected by the line along the longitudinal direction (long side direction) of the board | substrate for semiconductor devices is shown roughly) 2A is a cross-sectional view illustrating a process of mounting a semiconductor element on the semiconductor device substrate shown in FIG. 2, and FIG. 2B is an electrode pad on the semiconductor element placed on the semiconductor device substrate and an individual substrate. Sectional drawing explaining the process of electrically connecting with the wiring pattern of (b), (c) is the board | substrate for the same semiconductor device WHEREIN: The several semiconductor element mounted and the connection part of a semiconductor element and an individual board | substrate are collectively shown. Sectional drawing explaining the process sealed with sealing resin, (d) is sectional drawing explaining the process of dividing | segmenting the area | region sealed with sealing resin into the piece in the board | substrate for semiconductor devices, ( e) Divide individual substrates and finally form semiconductor devices Sectional view illustrating was steps 同半導体装置の製造方法における封止工程で用いる金型の断面図(半導体装置用基板の短辺方向に沿った線で切断した状態を概略的に示している)Sectional drawing of the metal mold | die used at the sealing process in the manufacturing method of the same semiconductor device (The state cut | disconnected by the line along the short side direction of the board | substrate for semiconductor devices is shown roughly) 従来の半導体装置用基板の平面図Plan view of conventional semiconductor device substrate 従来の他の半導体装置用基板の平面図Plan view of another conventional semiconductor device substrate 従来の半導体装置の封止工程で用いる金型の断面図Sectional view of a mold used in a conventional semiconductor device sealing process

符号の説明Explanation of symbols

1 半導体装置用基板
2 個片基板
3 回路基板領域部
4 連結部
6 半導体素子
7 配線パターン
8 接続配線
9 封止樹脂
11 金型(上金型)
12 金型(下金型)
13 封止領域
14 シール材
15 ゲート口
16 切断刃
DESCRIPTION OF SYMBOLS 1 Substrate for semiconductor devices 2 Single piece board 3 Circuit board area | region part 4 Connection part 6 Semiconductor element 7 Wiring pattern 8 Connection wiring 9 Sealing resin 11 Mold (upper mold)
12 Mold (lower mold)
13 Sealing area 14 Sealing material 15 Gate port 16 Cutting blade

Claims (8)

配線パターン及び半導体素子搭載部を設けた複数の個片基板をマトリックス状に配置してなる回路基板領域部を形成した半導体装置用基板であって、回路基板領域部が、半導体装置用基板の外周まで形成されており、半導体素子搭載部を有しない外周フレーム部が回路基板領域部の外周に形成されていないことを特徴とする半導体装置用基板。   A substrate for a semiconductor device in which a circuit board region portion is formed by arranging a plurality of individual substrates provided with wiring patterns and semiconductor element mounting portions in a matrix, wherein the circuit substrate region portion is an outer periphery of the semiconductor device substrate. A substrate for a semiconductor device, wherein an outer peripheral frame portion that is formed to have no semiconductor element mounting portion is not formed on an outer periphery of a circuit board region portion. 配線パターン及び半導体素子搭載部を設けた複数の個片基板をマトリックス状に配置してなる回路基板領域部を形成した半導体装置用基板として、前記回路基板領域部が、半導体装置用基板の外周まで形成されたものを採用し、
前記半導体装置用基板上に半導体素子を搭載し、
半導体素子上の電極パッドと個片基板上の配線パターンとを電気的に接続した後、
封止樹脂にて封止する際に、封止領域が半導体装置用基板の外周四辺よりも大きくなるように形成することを特徴とする半導体装置の製造方法。
As a substrate for a semiconductor device in which a circuit board region portion is formed by arranging a plurality of individual substrates provided with wiring patterns and semiconductor element mounting portions in a matrix, the circuit board region portion extends to the outer periphery of the semiconductor device substrate. Adopt the formed one,
A semiconductor element is mounted on the semiconductor device substrate,
After electrically connecting the electrode pad on the semiconductor element and the wiring pattern on the individual substrate,
A method for manufacturing a semiconductor device, wherein the sealing region is formed so as to be larger than the outer peripheral four sides of the semiconductor device substrate when sealing with a sealing resin.
半導体装置用基板の少なくとも一辺において、封止領域が回路基板領域部よりも大きいことを特徴とする請求項2に記載の半導体装置の製造方法。   The method for manufacturing a semiconductor device according to claim 2, wherein the sealing region is larger than the circuit substrate region portion on at least one side of the semiconductor device substrate. 半導体装置用基板の回路基板領域部の外周四辺において、封止領域が回路基板領域部よりも大きいことを特徴とする請求項2に記載の半導体装置の製造方法。   3. The method of manufacturing a semiconductor device according to claim 2, wherein the sealing region is larger than the circuit substrate region portion at four outer peripheral sides of the circuit substrate region portion of the semiconductor device substrate. 半導体装置用基板が、複数の回路基板領域部と、回路基板領域同士を連結する連結部とからなり、半導体装置用基板の回路基板領域部の少なくとも一辺において、封止領域が回路基板領域よりも大きいことを特徴とする請求項2に記載の半導体装置の製造方法。   The substrate for a semiconductor device comprises a plurality of circuit board region portions and a connecting portion for connecting the circuit substrate regions, and the sealing region is at least on one side of the circuit substrate region portion of the semiconductor device substrate than the circuit substrate region. The method of manufacturing a semiconductor device according to claim 2, wherein the semiconductor device is large. 封止樹脂にて封止する工程を、上金型と下金型とからなる封止金型を用いて行い、この際に、半導体装置用基板と下金型との間、および上金型と下金型との間に、封止樹脂の漏れを防止するシール材を介装することを特徴とする請求項2〜5の何れか1項に記載の半導体装置の製造方法。   The step of sealing with the sealing resin is performed using a sealing mold composed of an upper mold and a lower mold. At this time, between the substrate for the semiconductor device and the lower mold, and the upper mold 6. The method for manufacturing a semiconductor device according to claim 2, wherein a sealing material for preventing leakage of the sealing resin is interposed between the first mold and the lower mold. 半導体装置を製造する封止工程で用いる対となった封止金型であって、封止樹脂を注入させる一方の金型の封止領域が、半導体装置用基板を搭載する他方の金型の半導体装置用基板搭載領域よりも大きいことを特徴とする封止金型。   A pair of sealing molds used in a sealing process for manufacturing a semiconductor device, in which a sealing region of one mold into which a sealing resin is injected is that of the other mold on which the substrate for a semiconductor device is mounted A sealing mold characterized by being larger than a substrate mounting area for a semiconductor device. 上金型と下金型とからなる封止金型における上金型に、封止樹脂を封止金型内の封止領域に導入するゲート口が垂直方向に貫通して形成されていることを特徴とする請求項7記載の封止金型。   A gate opening for introducing a sealing resin into a sealing region in the sealing mold is formed in the upper mold in the sealing mold including the upper mold and the lower mold so as to penetrate vertically. The sealing mold according to claim 7.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283835A (en) * 2008-05-26 2009-12-03 Elpida Memory Inc Semiconductor device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283835A (en) * 2008-05-26 2009-12-03 Elpida Memory Inc Semiconductor device and method of manufacturing the same

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