JP2006123018A - Chamfering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a chamfering apparatus capable of reducing mud-like shavings, reducing the apparatus cost, and shortening the operation time.
A chamfering apparatus 50 according to the present invention is a chamfering apparatus that chamfers an outer peripheral end portion of a wafer 40. The chamfering apparatus 50 is rotatably arranged at the outer peripheral end portion of the wafer 40 and has a plurality of shapes that are the same as each other. The grindstone 1 having grooves on its outer peripheral surface, the grindstone 2 having a plurality of grooves having the same shape on the outer peripheral surface, arranged on the outer peripheral end of the wafer 40, and shavings generated from the wafer 40 And a dust collector 3 for removal. The surface of each of the plurality of grooves of the grindstone 1 has the same number, the surface of each of the plurality of grooves of the grindstone 2 has the same number, and the number of the surface of the grooves of the grindstone 1 and the grooves of the grindstone 2 The number of the surface is different from each other.
[Selection] Figure 1

Description

  The present invention relates to a chamfering apparatus, and more particularly to a chamfering apparatus that chamfers an end portion of a wafer.

  A wafer such as Si or GaAs, which is a material of a semiconductor element, is manufactured by thinly cutting out from an ingot state with a slicing machine or the like and then chamfering the end portion thereof with a wafer chamfering apparatus. This is because if the edge of the wafer is sharp, when a thin film is grown on the surface of the wafer in order to manufacture an LED (Light Emitting Diode) or a semiconductor laser element, it is likely to be cracked or chipped by heat. . Conventional chamfering of a wafer has been performed using, for example, the following apparatus.

  FIG. 11 and FIG. 12 are diagrams showing a main part of a conventional wafer chamfering machine. FIG. 11 is a plan view, and FIG. 12 is a side view. As shown in FIGS. 11 and 12, the wafer chamfering machine 150 includes a wafer table 121, a table shaft 122, a table bearing base 123, a vertical slider 125, and a vertical guide 126. The wafer 110 is fixed to a rotatable wafer table 121 by vacuum suction or the like. One of the wafer tables 121 is attached to a table shaft 122 provided on a table bearing base 123, and the table shaft 122 is rotated by a motor 124. The table bearing base 123 is fixed to an upper and lower slider 125, and the upper and lower slider 125 is movable in the vertical direction by an upper and lower guide 126 and is driven in the vertical direction by a drive mechanism including a motor 127. As a result, the wafer 110 can rotate while being fixed to the wafer table 121 and can also move in the vertical direction.

  The wafer chamfering machine 150 includes a grindstone 131, a grindstone bearing base 133, a horizontal slider 135, a horizontal guide 136, and a grinding liquid nozzle 145. The grindstone 131 is a trapezoid grindstone for chamfering the outer periphery, and is attached to the grindstone shaft 132 provided on the grindstone bearing base 133. The grindstone shaft 132 is rotated by a motor 134 provided on the horizontal slider 135 via a belt or the like. Is done. The grindstone bearing base 133 is fixed to a horizontal slider 135, and the horizontal slider 135 is movable in the direction of the wafer table 121 (horizontal direction) by a horizontal guide 136 and is driven in a horizontal direction by a driving mechanism including a motor 137. As a result, the grindstone 131 can rotate and move in the direction of the wafer table 121. Further, the table bearing base 123 is provided with a holder 149, and a plurality of grinding fluid nozzles 145 are attached to the holder 149, and the grinding fluid nozzle 145 is piped to a grinding fluid discharge device (not shown).

  When the wafer chamfering machine 150 configured as described above is used to chamfer the outer periphery of the wafer 110, the wafer 110 is attitude controlled by a wafer attitude controller (not shown) so that the center of the diameter coincides with the rotation center of the wafer table 121. After that, it is fixed to the wafer table 121 and positioned at a predetermined position (vertical direction) by the vertical slider 125. Next, the grindstone 131 rotates and moves in the direction of the wafer table 121 by the horizontal slider 135, and the wafer table 121 rotates.

The grindstone 131 has a substantially trapezoidal inner periphery, and the vertical positional relationship between the wafer 110 and the grindstone 131 is set so that the substantially trapezoidal taper portion 131 a hits the edge portion of the outer periphery of the wafer 110. The outer peripheral chamfering process on one side of the wafer 110 is performed. When the outer peripheral chamfering of one surface of the wafer 110 is finished, the wafer table 121 is sent downward by the upper and lower sliders 125 so that the edge portion of the other surface of the wafer 110 abuts the other taper portion 131b of the grindstone 131. The other surface of the wafer 110 is chamfered by the method. In any case, during the chamfering process, the grinding liquid is discharged from the grinding liquid nozzle 145 toward the direction in which the wafer 110 and the grindstone 131 are in contact with each other. A wafer chamfering apparatus having the above-described configuration is disclosed in, for example, Japanese Patent Application Laid-Open No. 7-156050 (Patent Document 1).
JP-A-7-156050

  In the conventional wafer chamfering machine 150, the grinding liquid is discharged in the direction in which the wafer 110 and the grindstone 131 are in contact with each other. That is, the wafer 110 is wet processed. As a result, the temperature of the grindstone 131 is prevented from rising due to frictional heat generated at the contact portion between the wafer 110 and the grindstone 131, and the life of the grindstone 131 is prevented from being reduced.

  However, when the wafer 110 is wet-processed, the shavings of the wafer 110 and the grindstone 131 generated during the processing and the grinding liquid are mixed to form mud-like shavings. This muddy shavings made it very difficult to treat waste water. As a result, the drainage facility has become large, leading to an increase in the size of the apparatus. Further, the mud-like shavings easily adhere to the work part, which makes it difficult to see the work part and makes it difficult to continue the processing.

  Further, when the wafer 110 is wet processed, it is necessary to perform stainless steel processing or plating processing on the equipment in order to prevent corrosion due to the grinding fluid. As a result, the cost of the wafer chamfering machine 150 has increased.

  Furthermore, in the conventional wafer chamfering machine 150, it is necessary to replace the grindstone 131 with a large number when moving from roughing to finishing. For this reason, there has been a problem that the working time is increased by the time required to replace the grindstone 131.

  Accordingly, an object of the present invention is to provide a chamfering apparatus that does not produce mud-like shavings, reduces the cost of the apparatus, and shortens the working time.

  A chamfering apparatus according to the present invention is a chamfering apparatus that chamfers an end portion of a wafer, and is arranged so as to be capable of rotating at the end portion of the wafer, and has a plurality of first grooves having the same shape on the outer peripheral surface thereof. The first grindstone having the second grindstone disposed on the outer peripheral surface of the first grindstone, which is rotatably arranged at the end of the wafer and having the same shape as each other, and the shavings generated from the wafer are removed. And a dust collecting device. The surface of each of the plurality of first grooves has the same number, and the surface of each of the plurality of second grooves has the same number, and the number of the surface of the first groove and the second groove The number of the surface is different from each other.

  According to the chamfering apparatus of the present invention, the wafer is chamfered without using the grinding liquid, and the shavings are removed by the dust collector, so that mud-like shavings are not generated. Further, since there is no corrosion due to the grinding fluid, it is not necessary to perform stainless steel treatment or plating treatment on the equipment, and the apparatus cost can be reduced correspondingly. In addition, since the first grindstone has a plurality of first grooves, the wafer can be chamfered with the other first grooves even if one first groove reaches the end of its life. The same applies to the second grindstone. Therefore, it is possible to prevent the life of the grindstone from being reduced. Furthermore, since the first grindstone can be used at the time of roughing and the second grindstone can be used at the time of finishing, roughing and finishing can be performed at once, and there is no need to replace the grindstone. For this reason, the working time can be shortened by the time required for exchanging the grindstone.

  Preferably, in the chamfering apparatus of the present invention, when the diameter of the wafer is D and the outer diameters of the first and second grindstones are d, the first and second grindstones have a relationship of 200> D / d> 5. Meet.

  By setting D / d> 5, the diameter d of the first and second grindstones is sufficiently small with respect to the diameter D of the wafer, so that the first and second grindstones do not interfere with each other and the wafer Can be placed at the end. Further, by setting 200> D / d, the size of the first and second grindstones can be sufficiently increased, so that the wafer can be processed in a short time.

  In the chamfering apparatus of the present invention, preferably, each of the first and second grindstones is a general grindstone. Thereby, since the edge part of a wafer can be chamfered at once, a wafer can be processed in a short time.

  Preferably, the chamfering apparatus of the present invention further includes a CCD camera for observing the wafer. As a result, the wafer can be easily aligned and the grindstone grooves can be easily replaced.

  In the present specification, the “number of groove surfaces” means the number according to JIS (Japanese Industrial Standards) of the abrasive grains constituting the groove surfaces. Further, the “total shape grindstone” means a grindstone having a shape complementary to the finished shape of the wafer (work).

  According to the chamfering apparatus of the present invention, the wafer is chamfered without using the grinding liquid, and the shavings are removed by the dust collector, so that mud-like shavings are not generated. Further, since there is no corrosion due to the grinding fluid, it is not necessary to perform stainless steel treatment or plating treatment on the equipment, and the apparatus cost can be reduced correspondingly. In addition, since the first grindstone has a plurality of first grooves, the wafer can be chamfered with the other first grooves even if one first groove reaches the end of its life. The same applies to the second grindstone. Therefore, it is possible to prevent the life of the grindstone from being reduced. Furthermore, since the first grindstone can be used at the time of roughing and the second grindstone can be used at the time of finishing, roughing and finishing can be performed at once, and there is no need to replace the grindstone. For this reason, the working time can be shortened by the time required for exchanging the grindstone.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a top view of an essential part of a chamfering apparatus according to an embodiment of the present invention. FIG. 2 is a plan view showing a configuration of a wafer to be chamfered in one embodiment of the present invention. FIG. 1 shows a top view of the main part of the chamfering apparatus when positioning the wafer.

  As shown in FIGS. 1 and 2, the chamfering apparatus 50 of the present embodiment includes a grindstone 1, 2, a dust collector 3, a wafer suction block 4, wafer pressers 5 and 6, and a wafer positioning block 7. And an OF (orientation flat) positioning block 8. A wafer 40 is fixed on the rotatable wafer suction block 4 by vacuum suction or the like.

  The wafer 40 has a diameter D of, for example, 10 mm to 300 mm, and a thickness of, for example, 150 μm to 2 mm. The wafer 40 is made of, for example, Si, SiC, GaAs, GaP, GaN, or InP. The outer peripheral end of the wafer 40 is constituted by, for example, a circumferential portion 40a, an OF 40b that is a relatively long straight portion, and an IF (index flat) 40c that is a relatively short straight portion. The OF 40b is a straight line that serves as a reference when dicing the wafer 40, and the front and back and the orientation of the wafer 40 are determined based on the positional relationship between the OF 40b and the IF 40c. The length from the center of the circle of the wafer 40 to the OF 40b is the length B, and the length from the center of the circle of the wafer 40 to the IF 40c is the length A.

  At the time of positioning the wafer 40, each of the wafer holders 5 and 6 presses the circumferential portion 40a toward the center of the wafer 40 with the spherical portions 5a and 6a at the tips thereof, and the wafer positioning block 7 has the IF 40c with its linear portion 7a. Is pressed toward the center of the wafer 40, and the OF positioning block 8 presses the OF 40 b toward the center of the wafer 40 with the linear portion 8 a.

  Further, each of the grindstones 1 and 2 is disposed in the vicinity of the outer peripheral end portion of the wafer 40, and both have a cylindrical shape. Each of the grindstones 1 and 2 is moved to the outer peripheral end of the wafer 40 during chamfering. Further, each of the grindstones 1 and 2 has an upper portion attached to an air spindle described later, and is thereby capable of rotating. Each of the grindstones 1 and 2 includes an abrasive material such as diamond abrasive grains or CBN (cubic boron nitride) and a binder for hardening the abrasive material. The dust collector 3 is arranged at a predetermined distance from the wafer 40.

  FIG. 3 is a side view showing the shape of the grindstone in one embodiment of the present invention. As shown in FIG. 3, the grindstone 1 is an overall grindstone and has six trapezoidal grooves 25 a to 25 f on its outer peripheral surface. Each of the plurality of grooves 25a to 25f is arranged in the rotation axis direction (vertical direction in FIG. 3) of the grindstone 1, and the surfaces of the plurality of grooves 25a to 25f have the same number. Each of the six grooves 25a to 25f has the same shape. Similarly, the grindstone 2 is a general grindstone, and has six trapezoidal grooves 26a to 26f on its outer peripheral surface. Each of the plurality of grooves 26a to 26f is arranged in the direction of the rotation axis of the grindstone 2, and the surface of each of the plurality of grooves 26a to 26f has the same number. Each of the six grooves 26a to 26f has the same shape. The numbers of the surfaces of the grooves 25a to 25f and the numbers of the surfaces of the grooves 26a to 26f are different from each other, and the numbers of the surfaces of the grooves 25a to 25f are smaller. That is, the grindstone 1 is for roughing, and the grindstone 2 is for finishing. The outer diameter d of the grindstones 1 and 2 is, for example, 4 mm, which is smaller than the outer diameter (about 100 mm to 200 mm) of the conventional grindstone.

  Then, the whole structure of the chamfering processing apparatus 50 in this Embodiment is demonstrated. FIG. 4 is a perspective view showing a configuration of a chamfering apparatus according to an embodiment of the present invention.

  As shown in FIG. 4, the upper portions of the grindstones 1 and 2 are fixed by the air spindles 10 and 11, respectively. An OF positioning block 8 is disposed on the right side of the grindstone 1 in FIG. The air spindles 10 and 11 and the OF positioning block 8 are fixed to a fixed plate 12. The fixed plate 12 is fixed to a z-axis table 13a, and the z-axis table 13a can be moved in the z-axis direction by a positioning motor 13b. The z-axis table 13a is arranged on the x-axis table 14a, and the x-axis table 14a can be moved in the x-axis direction by a positioning motor 14b. Further, the x-axis table 14a is disposed on the y-axis table 15a, and the y-axis table 15a can be moved in the y-axis direction by a positioning motor 15b. In this way, each of the grindstones 1, 2 and the OF positioning block 8 is moved in the z-axis direction, the x-axis direction, and the y-axis direction by the z-axis table 13a, the x-axis table 14a, and the y-axis table 15a, respectively. It is possible.

  The wafer positioning block 7 is disposed on the y-axis table 16a, and the y-axis table 16a can be moved in the y-axis direction by a positioning motor 16b. As a result, the wafer positioning block 7 is movable in the y-axis direction.

  Further, a spring 17 a and an air cylinder 17 b are attached to the wafer retainer 5. The wafer presser 5 is movable in the y-axis direction by the biasing force of the spring 17a and the pressure of the air in the air cylinder 17b. Similarly, a spring 18a and an air cylinder 18b are attached to the wafer retainer 6, and the wafer retainer 6 can move in the x-axis direction by the urging force of the spring 18a and the air pressure in the air cylinder 18b. Yes.

  Further, a dust collector 3 is disposed behind the wafer retainer 5, and the dust collector 3 is connected to a dust collector (not shown). A CCD (charge-coupled device) camera 19 for observing the wafer 40 is disposed behind the wafer positioning block 7.

  FIG. 5 is a perspective view showing a configuration of a wafer suction block in one embodiment of the present invention. In addition, in FIG. 5, the structure which exists under the floor is also illustrated. As shown in FIGS. 4 and 5, the wafer suction block 4 is formed on the rotating shaft 20. The wafer suction block 4 and the rotation shaft 20 are rotated together by the power of the rotation motor 21. A large number of suction holes 4 a are opened on the main surface of the wafer suction block 4. Each of the suction holes 4 a is connected to the vacuum pump 22 via a suction pipe 24 that passes through the rotary shaft 20. Further, a suction sensor 23 is attached to the suction pipe 24 in the rotary shaft 20. The suction sensor 23 determines whether or not the wafer 40 is normally placed on the wafer suction block 4 depending on the degree of vacuum of the suction pipe 24.

  Subsequently, the operation of the chamfering apparatus in the present embodiment will be described.

  Referring to FIGS. 1 and 4, first, information (length A, length B, and diameter D) relating to the dimensions of wafer 40 is input to a control device (not shown). In response to this information, the OF positioning block 8 and the wafer positioning block 7 are moved to predetermined positions.

  Next, the wafer 40 is placed on the wafer suction block 4 so that the OF 40 b faces the OF positioning block 8 and the IF 40 c faces the wafer positioning block 7. When the wafer 40 is placed, each of the wafer holders 5 and 6 moves toward the wafer 40 and presses the wafer 40 with each of the spherical portions 5a and 6a. As a result, each of OF 40b and IF 40c comes into close contact with each of linear portions 7a and 8a of OF positioning block 8 and positioning block 7, and wafer 40 is positioned. FIG. 6 is a side view showing the relationship between the OF positioning block 8 and the wafer 40 at this time. When the wafer 40 is positioned, the center of rotation of the wafer suction block 4 matches the center of the circle of the wafer 40.

  Next, referring to FIG. 5, the wafer 40 is sucked from the suction holes 4 a of the wafer suction block 4 by the vacuum pump 22. As a result, the wafer 40 is fixed on the wafer suction block 4 while being positioned. At this time, the suction state of the wafer 40 is monitored by the suction sensor 23 and it is confirmed by the suction sensor 23 that the suction pipe 24 has reached a predetermined degree of vacuum. Thereafter, each of wafer holders 5 and 6, wafer positioning block 7, and OF positioning block 8 is moved to a position away from wafer 40.

  Next, each of the grindstones 1 and 2 is moved to the outer peripheral end of the wafer 40. Then, the wafer 40 is rotated to place the grindstone 1 at one end 40d of the OF 40b. FIG. 7 shows a top view of the main part of the chamfering apparatus at this time.

  Next, the position of each of the grindstones 1 and 2 is finely adjusted in a state in which each of the grindstones 1 and 2 is rotated (rotated), and each of the grooves 25 a and 26 a of the grindstones 1 and 2 is pressed against the outer peripheral end of the wafer 40. Thereby, the end surface of the wafer 40 is chamfered by the surface of each of the grooves 25a and 26a. A side view showing the relationship between the grindstone 1 and the wafer 40 at this time is shown in FIG. FIG. 9 is an enlarged view of the main part of FIG.

  Here, each of the grindstones 1 and 2 rotates at a rotational speed of about 150,000 rpm, for example, and rotates at a higher speed than the conventional grindstone. This is because the peripheral speed (speed of the outer peripheral surface) of each of the grindstones 1 and 2 in the present embodiment is set to be approximately the same as the peripheral speed of the conventional grindstone, thereby chamfering the wafer 40 without reducing accuracy. Because. Generally, it is said that the wafer end face can be chamfered with high accuracy by increasing the peripheral speed of the grindstone. As described above, the conventional grindstone has an outer diameter of about 200 mm and a rotational speed of about 3000 rpm. On the other hand, the grindstones 1 and 2 of the present embodiment have an outer diameter of 4 mm, which is 1/50 of the conventional grindstone. Therefore, in order to make the peripheral speed comparable to the peripheral speed of the conventional grindstone, in the chamfering apparatus 50 of the present embodiment, the rotational speed of each of the grindstones 1 and 2 is 50 times 3000 rpm, that is, 150,000 rpm. .

  Chips of the wafer 40 and the grindstones 1 and 2 generated during the chamfering process are removed by the dust collector 3. Thereby, for example, even when the wafer 40 is made of GaAs, the shavings containing As harmful to the human body can be quickly removed.

  Next, referring to FIG. 7, wafer 40 is rotated in the direction of the arrow in FIG. 7 in a state where grooves 25 a and 26 a of grindstones 1 and 2 are pressed against the outer peripheral end of wafer 40. As a result, the outer peripheral end surface of the wafer 40 is roughly processed by the grindstone 1, then sent to the grindstone 2, and finished by the grindstone 2. The wafer 40 is preferably rotated at a feed rate of 15 mm / s or less, for example. Further, the grinding amount by the grindstones 1 and 2 is preferably 0.5 mm or less. By selecting such processing conditions, chipping hardly occurs at the outer peripheral end portion of the wafer 40.

  The grindstones 1 and 2 are separated from the wafer 40 when they reach the other end 40e of the OF 40b. In this way, the entire circumference of the circumferential portion 40a of the wafer 40 is chamfered. Further, when chamfering the OF 40b of the wafer 40, the chamfering is started for each of the grindstones 1 and 2 in accordance with the one end 40d of the OF 40b, and until the other end 40e of the OF 40b is reached, Move each one. The chamfering of the IF 40c is performed in the same manner as the chamfering of the OF 40b.

  By the way, when the number of the chamfered wafers 40 exceeds a certain number (for example, 40), the grinding force of the grooves 25a and 26a decreases, and the chamfering processing accuracy decreases. This is because each of the grooves 25a and 26a reaches the lifetime. Therefore, it is necessary to replace the grooves after chamfering a certain number of sheets. In the present embodiment, the grooves are exchanged by moving each of the grindstones 1 and 2 in the z-axis direction and aligning the other grooves 25 b and 26 b with the outer peripheral end of the wafer 40. A side view showing the relationship between the grindstone 1 and the wafer 40 at this time is shown in FIG. Then, each of the grooves 25b and 26b of the grindstones 1 and 2 is pressed against the outer peripheral end portion of the wafer 40, and chamfering is continuously performed by the respective surfaces of the grooves 25b and 26b. Since each of the grindstones 1 and 2 of the present embodiment has six grooves 25a to 25f and 26a to 26f, chamfering is performed on the 40 wafers × 6 = 240 wafers 40 without exchanging the grindstones 1 and 2. Can be processed. If the number of grooves is increased, the number of wafers that can be chamfered further increases.

  The chamfering apparatus 50 according to the present embodiment is a chamfering apparatus that chamfers the outer peripheral end portion of the wafer 40, and is arranged to be able to rotate on the outer peripheral end portion of the wafer 40, and has a plurality of grooves 25 a having the same shape. Generated from the wafer 40 and the grindstone 1 having a plurality of grooves 26a to 26f having the same shape as each other and arranged on the outer peripheral end of the wafer 40 so as to be able to rotate. And a dust collector 3 for removing the shavings. The surfaces of the plurality of grooves 25a to 25f have the same number, and the surfaces of the plurality of grooves 26a to 26f have the same number, and the surface number of the grooves 25a to 25f and the grooves 26a to 26f. The number of the surface is different from each other.

  According to the chamfering apparatus 50 of the present embodiment, the wafer 40 is chamfered without using the grinding liquid, and the shavings are removed by the dust collector 3, so that no mud-like shavings are generated. Further, since there is no corrosion due to the grinding fluid, it is not necessary to perform stainless steel treatment or plating treatment on the equipment, and the apparatus cost can be reduced correspondingly. In addition, since the grindstone 1 has a plurality of grooves 25a to 25f, the wafer 40 can be chamfered with another groove 26b even if one groove 25a reaches the end of its life. The same applies to the grindstone 2. Therefore, it is possible to prevent the life of the grindstone from being reduced. Furthermore, since the grindstone 1 can be used at the time of roughing and the grindstone 2 can be used at the time of finishing, roughing and finishing can be performed at once, and it is not necessary to replace the grindstone. For this reason, the working time can be shortened by the time required for exchanging the grindstone.

  In the present embodiment, the case where the diameter D of the wafer 40 is 10 mm to 300 mm and the outer diameter d of the grindstones 1 and 2 is about 4 mm is shown. However, the diameter D of the wafer 40 and the outer diameter of the grindstones 1 and 2 are shown. d is arbitrary and preferably satisfies the relationship of 200> D / d> 5.

  By setting D / d> 5, the diameter d of the grindstones 1 and 2 is sufficiently small with respect to the diameter D of the wafer 40, so that each of the grindstones 1 and 2 does not interfere with each other at the outer peripheral end of the wafer 40. Can be arranged. Further, by setting 200> D / d, the size of the grindstones 1 and 2 can be made sufficiently large, so that the wafer 40 can be processed in a short time.

  In the chamfering apparatus 50 according to the present embodiment, the grindstones 1 and 2 are all shaped grindstones. Thereby, since the outer peripheral edge part of the wafer 40 can be chamfered once, the wafer 40 can be processed in a short time.

  The chamfering apparatus 50 according to the present embodiment further includes a CCD camera 19 for observing the wafer 40. Thereby, the wafer 40 can be easily aligned, and the grooves 25a to 25f and 26a to 26f of the grindstones 1 and 2 can be easily exchanged.

  Note that the diameter of the wafer 40 processed by the grindstones 1 and 2 is desirably large when the grindstone is rough (small number) and the grindstones 1 and 2 are fine (large number). ) It is desirable to make it small with a grindstone. The rotation direction of the wafer 40 is preferably such that after the wafer 40 hits a rough (large number) grindstone, the wafer 40 hits a fine (large number) grindstone to reduce the amount of cutting by the fine grindstone.

  In the present embodiment, the grindstones 1 and 2 having the six trapezoidal grooves 25a to 25f and 26a to 26f are shown, but the present invention is not limited to such a case, and the first and second The shape of the groove is arbitrary, and the number may be two or more.

  Although the case where the wafer 40 has the OF 40b and the IF 40c has been described in the present embodiment, the wafer to be processed by the chamfering apparatus of the present invention is not limited to such a shape, and the OF or IF There is no need.

  The embodiment disclosed above should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above embodiments but by the scope of claims, and is intended to include all modifications and variations within the scope and meaning equivalent to the scope of claims.

It is a principal part top view of the chamfering apparatus at the time of positioning of a wafer. It is a top view which shows the structure of the wafer chamfered in one embodiment of this invention. It is a side view which shows the shape of the grindstone in one embodiment of this invention. It is a perspective view which shows the structure of the chamfering processing apparatus in one embodiment of this invention. It is a perspective view which shows the structure of the wafer adsorption | suction block in one embodiment of this invention. It is a side view which shows the relationship between the positioning block at the time of a wafer positioning, and a wafer. It is a principal part top view of the chamfering processing apparatus in the state which has arrange | positioned the grindstone in the outer peripheral edge part of the wafer. It is a side view which shows the relationship between the grindstone at the time of chamfering the end surface of a wafer, and a wafer. It is a principal part enlarged view of FIG. It is a side view which shows the relationship between a grindstone and a wafer at the time of replacing | exchanging a groove | channel. It is a top view which shows the principal part of the conventional wafer chamfering machine. It is a side view which shows the principal part of the conventional wafer chamfering machine.

Explanation of symbols

  1, 2 Grinding stone, 3 Dust collector, 4 Wafer suction block, 4a Suction hole, 5, 6 Wafer holder, 5a, 6a Spherical part, 7 Wafer positioning block, 7a, 8a Linear part, 8 OF positioning block, 10, 11 Air spindle, 12 Fixed plate, 13a z-axis table, 13b, 14b, 15b, 16b Positioning motor, 14a x-axis table, 15a, 16a y-axis table, 17a, 18a Spring, 17b, 18b Air cylinder, 19 CCD camera, 20 Rotating shaft, 21 Rotating motor, 22 Vacuum pump, 23 Adsorption sensor, 24 Suction pipe, 25a-25f, 26a-26f Groove, 40, 110 Wafer, 40a Circumferential part, 40b OF, 40c IF, 40d, 40e OF Edge, 50 Chamfering device, 121 Wafer table, 12 Table shaft, 123 Table bearing base, 124, 127, 134, 137 Motor, 125 Vertical slider, 126 Vertical guide, 131 Grinding wheel, 131a, 131b Tapered part, 132 Grinding wheel shaft, 133 Grinding wheel bearing base, 135 Horizontal slider, 136 Horizontal guide 145 grinding liquid nozzle, 149 holder, 150 wafer chamfering machine.

Claims (4)

A chamfering device for chamfering the edge of a wafer,
A first grindstone having a plurality of first grooves on the outer peripheral surface of the wafer, which are rotatably arranged at an end of the wafer and have the same shape;
A second grindstone disposed on the edge of the wafer so as to be able to rotate and having a plurality of second grooves having the same shape on the outer peripheral surface thereof;
A dust collector for removing shavings generated from the wafer,
The surface of each of the plurality of first grooves has the same number, and the surface of each of the plurality of second grooves has the same number, and the number of the surface of the first groove and the A chamfering device that is different from the number of the surface of the second groove.   The said 1st and said 2nd grindstone satisfy | fills the relationship of 200> D / d> 5 when the diameter of the said wafer is set to D and the outer diameter of the said 1st and said 2nd grindstone is set to d. The chamfering apparatus according to 1.   The chamfering apparatus according to claim 1 or 2, wherein each of the first and second grindstones is a general grindstone.   The chamfering apparatus according to claim 1, further comprising a CCD camera for observing the wafer.

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