JP2006032036A - Contact material for vacuum valves - Google Patents
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Abstract
【課題】 真空遮断器等に使用される真空バルブの接点材料に要求される耐電圧や遮断の性能の安定性を向上させた真空バルブ用接点材料を提供する。
【解決手段】 導電成分と耐弧成分と第3成分と必要により補助成分とで構成される真空バルブ用接点材料で、導電成分Cu、耐弧成分Cr、および第3成分α(耐弧成分平均粒子径の3倍以下の平均粒子径を有する例えばW)の粉末を混合し、加圧成型した後、液相焼結することにより製造される。これにより、第3成分αの近傍にCrが晶出されたものとなり、遮断特性と耐電圧特性を向上させた真空バルブ用接点材料が得られる。
【選択図】 図1
PROBLEM TO BE SOLVED: To provide a contact material for a vacuum valve in which the withstand voltage required for the contact material of a vacuum valve used for a vacuum circuit breaker or the like and the stability of the breaking performance are improved.
A contact material for a vacuum valve composed of a conductive component, an arc-proof component, a third component, and an auxiliary component as required, comprising a conductive component Cu, an arc-proof component Cr, and a third component α (arc-proof component average) For example, W) powder having an average particle diameter of 3 times or less of the particle diameter is mixed and pressure-molded, followed by liquid phase sintering. Thereby, Cr is crystallized in the vicinity of the third component α, and a contact material for a vacuum valve with improved cut-off characteristics and withstand voltage characteristics can be obtained.
[Selection] Figure 1
Description
本発明は、真空遮断器等に使用される真空バルブの接点材料に要求される特性の内、耐電圧性能と遮断性能を向上させた真空バルブ用接点材料に関する。 The present invention relates to a contact material for a vacuum valve that has improved withstand voltage performance and break-off performance among characteristics required for contact material of a vacuum valve used in a vacuum circuit breaker or the like.
真空バルブ用接点材料に要求される特性としては、耐電圧特性、遮断特性、耐溶着特性に対する各性能で示される基本三要件と、この他に電気抵抗(バルク抵抗と接触抵抗)と温度上昇が低く安定していることが重要な要件となっている。 The characteristics required for contact materials for vacuum valves are the three basic requirements indicated by each performance for withstand voltage characteristics, breaking characteristics, and welding characteristics, as well as electrical resistance (bulk resistance and contact resistance) and temperature rise. Low and stable is an important requirement.
しかしながら、これらの要件の中には相反するものがある関係上、単一の金属種によって全ての要件を満足させることは不可能である。このため、実用化されている多くの接点材料においては、不足する特性を相互に補えるような2種以上の物質、例えば導電成分と耐弧成分とを組合せて大電流用または高電圧用等のように特定の用途に合った接点材料の開発が行われ、ある程度優れた特性を有するものが開発されている。開閉器という使用目的から、高確率で電流の開閉が可能であることは言うまでもない。 However, because some of these requirements are contradictory, it is impossible to satisfy all the requirements with a single metal species. For this reason, in many contact materials that have been put to practical use, two or more types of materials that can compensate for the insufficient properties, for example, a combination of a conductive component and an arc-resistant component for large currents or high voltages, etc. Thus, contact materials suitable for specific applications have been developed, and materials having excellent characteristics to some extent have been developed. Needless to say, current can be opened and closed with a high probability for the purpose of use as a switch.
従来の発明でも、当社から「真空バルブ用接点材料、その製造方法、および真空バルブ」と題して出願され公開されているもの(特許文献1参照)があるが、この出願では、導電成分をCu、第1耐弧成分をCr、第2耐弧成分をW,Mo,Ta,Nbのいずれか一つまたはその組み合わせとしているのに対して、本発明では耐弧成分はCrに限定しておらず、さらに本発明の第3成分は、耐弧成分だけの役割に限定しているわけではなく、液相焼結の際に導電成分に固溶した耐弧成分が晶出する際の核となる等の焼結助剤としての役割も期待している。従って本発明でいう第3成分は、金属に限定されずに、導電成分にほとんど固溶しない成分であることも特徴としている点も異なる。 Even in the conventional invention, there is an invention that has been filed and published by the Company under the title of “contact material for vacuum valve, manufacturing method thereof, and vacuum valve” (see Patent Document 1). The first arc resistant component is Cr and the second arc resistant component is any one of W, Mo, Ta, Nb or a combination thereof, whereas in the present invention, the arc resistant component is not limited to Cr. Furthermore, the third component of the present invention is not limited to the role of only the arc-resistant component, but the core when the arc-resistant component solid-solved in the conductive component is crystallized during liquid phase sintering. The role as a sintering aid is expected. Therefore, the third component referred to in the present invention is not limited to a metal, and is also characterized by being a component that hardly dissolves in a conductive component.
また、シーメンス(Siemens)社から「真空遮断器用接触子材料としての銅・クロム溶融合金の製造方法」と題して出願され公告されているもの(特許文献2参照)があるが、この出願では、CuとCrの両方を溶解して製造することを特徴としているのに対し、本発明では、Cu等の導電成分のみを溶融させることを特徴としている点が異なる。
真空バルブの耐電圧性能や遮断性能を充分に発揮させるには、接点材料の組織には微細な粒子が存在し、さらに接点中のガス含有量は小さいことが好ましい。 In order to fully exhibit the withstand voltage performance and interruption performance of the vacuum valve, it is preferable that fine particles are present in the structure of the contact material and that the gas content in the contact is small.
従来の接点材料では、微細粒子の存在のためには、微細な原料粉末を使用することが多く、その際には、原料粉末の比表面積が極端に増大して接点中のガス含有量も増大してしまい、安定した遮断性能や耐電圧性能が得られないことが多い。 Conventional contact materials often use fine raw material powders due to the presence of fine particles. In that case, the specific surface area of the raw material powders increases extremely, and the gas content in the contacts also increases. As a result, it is often impossible to obtain stable interrupting performance and withstand voltage performance.
本発明は、従来のこのような点に鑑みて為されたもので、真空遮断器等に使用される真空バルブの接点材料に要求される耐電圧や遮断の性能の安定性を向上させた真空バルブ用接点材料を提供することを目的とする。 The present invention has been made in view of such conventional points, and is a vacuum that improves the withstand voltage required for the contact material of a vacuum valve used for a vacuum circuit breaker and the stability of the breaking performance. An object is to provide a contact material for a valve.
上記目的を達成するために、本発明に係る真空バルブ用接点材料は、少なくとも導電成分と耐弧成分と第3成分とで構成される真空バルブ用接点材料であって、第3成分の原料粉末として、耐弧成分の原料粉末の平均粒子径の3倍以下の平均粒子径を有するものが使用され、液相焼結により製造されたことを特徴とする。 In order to achieve the above object, a contact material for a vacuum valve according to the present invention is a contact material for a vacuum valve composed of at least a conductive component, an arc resistant component, and a third component, and is a raw material powder of the third component As described above, a material having an average particle size of 3 times or less of the average particle size of the raw material powder of the arc-resistant component is used, and is manufactured by liquid phase sintering.
本発明によれば、遮断特性と耐電圧特性を向上させた真空バルブ用接点材料を提供することが出来る。 ADVANTAGE OF THE INVENTION According to this invention, the contact material for vacuum valves which improved the interruption | blocking characteristic and the withstand voltage characteristic can be provided.
以下、図面を参照して本発明の実施形態について詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
前述したように、真空バルブ用接点材料の性能、例えばCu−Cr接点の耐電圧性能や遮断性能を充分に発揮させるには、接点中に微細なCr粒子の存在と低ガス量の兼備が必要である。 As described above, the presence of fine Cr particles and a low gas content are necessary in order to fully demonstrate the performance of contact materials for vacuum valves, such as the withstand voltage performance and interruption performance of Cu-Cr contacts. It is.
すなわち、本実施形態の特徴は、微細組織と低ガス量の兼備にある。それを得る為の具体的手段としては、Cuにほとんど固溶しない第3成分αを添加して液相焼結をしてαの近傍にCrを晶出させて製造することが挙げられる。例えば、図1に示すように、導電成分Cu、耐弧成分Cr、および第3成分αの粉末を混合し、加圧成型した後、液相焼結(Cuの融点以上の温度で焼結)することにより、第3成分αの周りにCrが晶出される。なお、この場合、核となる第3成分αが微細なほど、粒子数が多くなり、その周りに晶出されるCrの数も多くなって微細となる。 That is, the feature of this embodiment is that it has both a fine structure and a low gas amount. As a specific means for obtaining this, it is possible to manufacture by adding a third component α which is hardly dissolved in Cu and performing liquid phase sintering to crystallize Cr in the vicinity of α. For example, as shown in FIG. 1, powders of a conductive component Cu, an arc-proof component Cr, and a third component α are mixed and pressure-molded, followed by liquid phase sintering (sintering at a temperature equal to or higher than the melting point of Cu). By doing so, Cr is crystallized around the third component α. In this case, the finer the third component α serving as a nucleus, the larger the number of particles, and the larger the number of Cr crystallized around the third component α.
なお本発明の主旨はCu−Cr接点に限るものではなく、その他の導電成分とその他の耐弧成分と必要により補助成分からなる接点材料についても適用可能である。 Note that the gist of the present invention is not limited to Cu—Cr contacts, but can be applied to contact materials composed of other conductive components, other arc-proof components, and, if necessary, auxiliary components.
本実施形態により、微細組織と低ガス量を兼備することができ、耐電圧性能、遮断性能等を安定化させ、接点性能を向上させることを可能とした。 According to the present embodiment, it is possible to combine a fine structure and a low gas amount, and it is possible to stabilize the withstand voltage performance, the breaking performance, and the like, and to improve the contact performance.
以下、本発明の実施例を説明するが、はじめに、本発明の真空バルブ用接点材料が適用される真空バルブの構成例を、図2および図3で説明する。 Examples of the present invention will be described below. First, a configuration example of a vacuum valve to which the contact material for a vacuum valve of the present invention is applied will be described with reference to FIGS.
図2において、1は遮断室を示し、この遮断室1は、絶縁材料によりほぼ円筒状に形成された絶縁容器2と、この両端に封着金具3a,3bを介して設けた金属性の蓋体4a,4bとで真空気密に構成されている。そして、上記遮断室1内には、導電棒5,6の対向する端部に取り付けられた一対の電極7,8が配設され、上部の電極7を固定電極、下部の電極8を可動電極としている。また、この可動電極8の電極棒6には、ベローズ9が取り付けられ遮断室1内を真空気密に保持しながら電極8の軸方向の移動を可能にし、このベローズ9上部には金属性のアークシールド10が設けられ、ベローズ9がアーク蒸気で覆われることを防止している。11は、上記電極7,8を覆うようにして遮断室1内に設けられた金属性のアークシールドで、絶縁容器2がアーク蒸気で覆われることを防止している。さらに、電極8は、図3に拡大して示すように、導電棒6にロウ付け部12によって固定されるか、また、かしめによって圧着接続されている。接点13aは、電極8にロウ付け14で固着されている。なお、図2における13bは固定側接点である。
In FIG. 2,
続いて図4を基にして、本発明の真空バルブ用接点材料の実施例、比較例の製造方法及び遮断特性と耐電圧特性の測定結果について述べる。 Next, based on FIG. 4, examples of the contact materials for vacuum valves of the present invention, manufacturing methods of comparative examples, and measurement results of the breaking characteristics and withstand voltage characteristics will be described.
(比較例1〜2、実施例1〜3)
比較例1では、第3成分αを添加せずに、微細なCr粉末(その分ガス含有量は大)を使用した液相焼結法でCu−50Cr接点を製造した。Cu粉末(平均粒径30μm)とCr粉末(平均粒径10μm)を重量比1:1となるように混合してφ60mmの金型で10t/cm2で成形した圧粉体を、φ70mmの坩堝に、圧粉体の周囲をアルミナ粉で覆って充填した後、10−3Paオーダの真空中で、1200℃×60分の条件で液相焼結し、Cu−50Cr合金を複数枚得た。
(Comparative Examples 1-2, Examples 1-3)
In Comparative Example 1, a Cu-50Cr contact was produced by a liquid phase sintering method using fine Cr powder (with a correspondingly large gas content) without adding the third component α. Cu powder (average particle size 30 μm) and Cr powder (
このCu−Cr合金を、断面の組織観察と酸素量の測定を実施すると共に所定の接点形状(φ50mm、t5mm)に加工した。断面組織の特徴と酸素量の測定値を図4に示した。また加工した接点材料を真空バルブに組み込んで遮断試験と耐電圧試験を実施した。遮断試験は、5kAから徐々に電流値を上げていく方法で最大遮断電流を測定した。また遮断試験後の接点について、耐電圧試験を実施した。耐電圧試験は、電極間隔を一定(約5mm)にして絶縁破壊電圧を100回測定し、その平均値を算出した。これらの比較例1の測定結果を基準とし、その他の測定結果は相対値で示した。 This Cu—Cr alloy was processed into a predetermined contact shape (φ50 mm, t5 mm) while observing the structure of the cross section and measuring the amount of oxygen. The characteristics of the cross-sectional structure and the measured values of the oxygen content are shown in FIG. The processed contact material was incorporated into a vacuum valve, and a breaking test and a withstand voltage test were conducted. In the interruption test, the maximum interruption current was measured by gradually increasing the current value from 5 kA. In addition, a withstand voltage test was performed on the contacts after the interruption test. In the withstand voltage test, the dielectric breakdown voltage was measured 100 times with a constant electrode interval (about 5 mm), and the average value was calculated. Based on the measurement results of Comparative Example 1, the other measurement results are shown as relative values.
実施例1では、Cu−48Cr−2W合金を、比較例1と同一の液相焼結で作製した。ただし、原料粉末の平均粒径は、Cuは30μm、Crは50μm、Wが130μmで、混合比(重量比)は、Cu:Cr:W=50:48:2とした。作製したCu−48Cr−2W合金の断面組織は、粒径20μm程度の微細なCr粒子がW粒子の近傍あるいは以前Cuマトリックスの粒界だったと思われる箇所に点在しており、合金中の酸素量は800ppmであった。電気特性の評価結果は、遮断特性と耐電圧特性は比較例1のそれぞれ1.1倍と1.1倍であった。 In Example 1, a Cu-48Cr-2W alloy was produced by the same liquid phase sintering as in Comparative Example 1. However, the average particle size of the raw material powder was 30 μm for Cu, 50 μm for Cr, 130 μm for W, and the mixing ratio (weight ratio) was Cu: Cr: W = 50: 48: 2. The cross-sectional structure of the prepared Cu-48Cr-2W alloy is dotted with fine Cr particles having a particle size of about 20 μm in the vicinity of W particles or at places where it was thought that the grain boundaries of the Cu matrix were previously used. The amount was 800 ppm. As a result of evaluating the electrical characteristics, the cutoff characteristics and the withstand voltage characteristics were 1.1 times and 1.1 times that of Comparative Example 1, respectively.
実施例2では、Cu−24Cr−1Mo合金を、比較例1と同一の液相焼結で作製した。ただし、原料粉末の平均粒径は、Cuは30μm、Crは150μm、Moが3μmで、混合比(重量比)は、Cu:Cr:Mo=75:24:1とした。作製したCu−24Cr−1Mo合金の断面組織は、粒径10μm程度の微細なCr粒子が微細なMo粒子の近傍に点在しており、合金中の酸素量は600ppmであった。電気特性の評価結果は、遮断特性と耐電圧特性は比較例1のそれぞれ1.3倍と1.1倍であった。 In Example 2, a Cu-24Cr-1Mo alloy was produced by the same liquid phase sintering as in Comparative Example 1. However, the average particle size of the raw material powder was 30 μm for Cu, 150 μm for Cr, 3 μm for Mo, and the mixing ratio (weight ratio) was Cu: Cr: Mo = 75: 24: 1. As for the cross-sectional structure of the produced Cu-24Cr-1Mo alloy, fine Cr particles having a particle size of about 10 μm were scattered in the vicinity of the fine Mo particles, and the amount of oxygen in the alloy was 600 ppm. As a result of evaluating the electrical characteristics, the breaking characteristics and the withstand voltage characteristics were 1.3 times and 1.1 times that of Comparative Example 1, respectively.
実施例3では、液相焼結の1種である焼結溶浸法でCu−55Cr−1Ta合金を作製した。Cu−55Cr−1Ta合金は、Cr粉末(平均粒径150μm)とTa粉末(平均粒径15μm)を混合して加圧成形した後、水素雰囲気中で、1200℃×120分の条件で焼結して製造したCr(+Ta)スケルトンと溶浸材Cuを坩堝内で上下に配置し、水素雰囲気中で1200℃に加熱して120分保持することにより、導電成分であるCuを溶浸させることにより作製した。作製したCu−55Cr−1Ta合金の断面組織は、粒径20μm程度の微細なCr粒子がTa粒子の近傍に点在しており、合金中の酸素量は400ppmであった。電気特性の評価結果は、遮断特性と耐電圧特性は比較例1のそれぞれ1.1倍と1.2倍であった。
In Example 3, a Cu-55Cr-1Ta alloy was produced by a sintering infiltration method that is one type of liquid phase sintering. Cu-55Cr-1Ta alloy was sintered under conditions of 1200 ° C. for 120 minutes in a hydrogen atmosphere after Cr powder (
比較例2では、Cu−48Cr−2W合金を、比較例1と同一の液相焼結で作製した。ただし、原料粉末の平均粒径は、Cuは30μm、Crは50μm、Wが170μmで、混合比(重量比)は、Cu:Cr:W=50:48:2とした。作製したCu−48Cr−2W合金の断面組織は、原料粉末と同等な粒径である50μm程度のCr粒子が存在しており、合金中の酸素量は800ppmであった。電気特性の評価結果は、遮断特性と耐電圧特性は比較例1のそれぞれ1.0倍と1.0倍であり、改善効果はほとんどなかった。 In Comparative Example 2, a Cu-48Cr-2W alloy was produced by the same liquid phase sintering as in Comparative Example 1. However, the average particle diameter of the raw material powder was 30 μm for Cu, 50 μm for Cr, and 170 μm for W, and the mixing ratio (weight ratio) was Cu: Cr: W = 50: 48: 2. In the cross-sectional structure of the produced Cu-48Cr-2W alloy, Cr particles having a particle size equivalent to that of the raw material powder of about 50 μm existed, and the oxygen content in the alloy was 800 ppm. As a result of evaluating the electrical characteristics, the breaking characteristics and the withstand voltage characteristics were 1.0 times and 1.0 times that of Comparative Example 1, respectively, and there was almost no improvement effect.
以上の比較例1〜2と実施例1〜3の結果より、導電成分Cuと耐弧成分Crに加え、第3成分を添加した液相焼結により、遮断特性と耐電圧特性という電気特性の向上が可能となる。第3成分の原料粉末の平均粒径は原料耐成分粉末の平均粒径の3倍以下が有効で、好ましくは1/10以下の時に特性向上が顕著となる。 From the results of Comparative Examples 1 and 2 and Examples 1 to 3, the electrical properties of the breaking characteristics and the withstand voltage characteristics are obtained by liquid phase sintering in which the third component is added in addition to the conductive component Cu and the arc resistant component Cr. Improvement is possible. The average particle size of the third component raw material powder is effective to be not more than 3 times the average particle size of the raw material resistant component powder, and the characteristic improvement becomes remarkable when it is preferably 1/10 or less.
(比較例3〜4、実施例4〜5)
前記比較例1〜2と実施例1〜3では、焼結温度を1200℃、即ち導電成分Cuの融点(1083℃)を基準にして+117℃の温度で焼結している事例について述べたが、本発明の主旨はこれに限るものではない。
(Comparative Examples 3-4, Examples 4-5)
In Comparative Examples 1 and 2 and Examples 1 to 3, the case where the sintering temperature is 1200 ° C., that is, the temperature is + 117 ° C. based on the melting point of the conductive component Cu (1083 ° C.) is described. However, the gist of the present invention is not limited to this.
比較例3、実施例4〜5、比較例4では、焼結温度をそれぞれ1100℃、1150℃、1250℃、1300℃で、Cu−24Cr−1WC合金を製造した。なお原料粉末の平均粒径は、Cuは30μm、Crは150μm、WCが0.8μmで、混合比(重量比)は、Cu:Cr:WC=75:24:1とした。 In Comparative Example 3, Examples 4 to 5, and Comparative Example 4, Cu-24Cr-1WC alloys were produced at sintering temperatures of 1100 ° C., 1150 ° C., 1250 ° C., and 1300 ° C., respectively. The average particle diameter of the raw material powder was 30 μm for Cu, 150 μm for Cr, 0.8 μm for WC, and the mixing ratio (weight ratio) was Cu: Cr: WC = 75: 24: 1.
この内1300℃で焼結した比較例4では、外見上崩れており、明らかにCuとCrが分離してしまったので、接点の電気評価に値しないと判断した。残りの3種類のCu−24Cr−1WC合金については、材料特性を評価すると共に、所定形状に加工した後、電気特性を評価した。 Of these, Comparative Example 4 sintered at 1300 ° C. was broken in appearance and clearly separated from Cu and Cr, and thus was judged not worthy of electrical evaluation of the contacts. For the remaining three types of Cu-24Cr-1WC alloys, the material characteristics were evaluated, and after processing into a predetermined shape, the electrical characteristics were evaluated.
比較例3では、微細なCr粒子は存在せず、遮断特性と耐電圧特性は、比較例1のそれぞれ1.0倍と1.0倍であり、向上されなかった。これは焼結温度が低い為に、Crの晶出が促進されなかったからである。 In Comparative Example 3, there were no fine Cr particles, and the interruption characteristics and withstand voltage characteristics were 1.0 times and 1.0 times that of Comparative Example 1, respectively, and were not improved. This is because the crystallization of Cr was not promoted because the sintering temperature was low.
実施例4では、粒径10μm程度の微細Crが点在しており、遮断特性と耐電圧特性は、比較例1のそれぞれ1.2倍と1.2倍であった。 In Example 4, fine Cr having a particle diameter of about 10 μm was scattered, and the breaking characteristics and the withstand voltage characteristics were 1.2 times and 1.2 times that of Comparative Example 1, respectively.
実施例5では、粒径10μm程度の微細Crが点在しており、遮断特性と耐電圧特性は、比較例1のそれぞれ1.3倍と1.2倍であった。 In Example 5, fine Cr having a particle size of about 10 μm was scattered, and the cutoff characteristics and the withstand voltage characteristics were 1.3 times and 1.2 times that of Comparative Example 1, respectively.
以上のように、焼結温度が導電成分Cuの融点を基準にして+20℃より低いとCuは溶解するが、微細なCr粒子の晶出が顕著に表れない。一方、焼結温度が導電成分Cuの融点を基準にして+200℃を越えるとCuの形状、換言すると接点の形状が保てなくなる。更にCuとCrが2相分離して組織の均一性が保てない。従って、接点材料の焼結温度は、導電成分Cuの融点(1083℃)を基準にして、+20℃以上、+200℃以下とすることが好ましい。 As described above, when the sintering temperature is lower than + 20 ° C. based on the melting point of the conductive component Cu, Cu dissolves, but crystallization of fine Cr particles does not appear remarkably. On the other hand, if the sintering temperature exceeds + 200 ° C. based on the melting point of the conductive component Cu, the shape of Cu, in other words, the shape of the contact cannot be maintained. Furthermore, Cu and Cr are two-phase separated, and the uniformity of the structure cannot be maintained. Accordingly, the sintering temperature of the contact material is preferably + 20 ° C. or higher and + 200 ° C. or lower based on the melting point (1083 ° C.) of the conductive component Cu.
(実施例6〜10)
実施例6〜10では、Cu−24Cr−5WC合金を真空雰囲気中の液相焼結で作製した後に真空雰囲気中で30分の熱処理を行い、熱処理温度をパラメータとした。
(Examples 6 to 10)
In Examples 6 to 10, a Cu-24Cr-5WC alloy was produced by liquid phase sintering in a vacuum atmosphere and then heat-treated for 30 minutes in a vacuum atmosphere, and the heat treatment temperature was used as a parameter.
実施例6では、1070℃で熱処理して、電気特性を評価したところ、遮断特性と耐電圧特性は、比較例1のそれぞれ1.2倍と1.1倍であった。 In Example 6, the electrical characteristics were evaluated by heat treatment at 1070 ° C., and the cutoff characteristics and the withstand voltage characteristics were 1.2 times and 1.1 times that of Comparative Example 1, respectively.
実施例7では、1050℃で熱処理して、電気特性を評価したところ、遮断特性と耐電圧特性は、比較例1のそれぞれ1.2倍と1.1倍であり、熱処理により遮断特性が若干向上されていた。これは熱処理により導電率が改善されたからである。 In Example 7, the electrical characteristics were evaluated by heat treatment at 1050 ° C., and the interruption characteristics and the withstand voltage characteristics were 1.2 times and 1.1 times that of Comparative Example 1, respectively. It was improved. This is because the conductivity is improved by the heat treatment.
実施例8では、850℃で熱処理して、電気特性を評価したところ、遮断特性と耐電圧特性は、比較例1のそれぞれ1.3倍と1.1倍であり、熱処理により遮断特性がさらに向上されていた。 In Example 8, the electrical characteristics were evaluated by heat treatment at 850 ° C., and the interruption characteristics and the withstand voltage characteristics were 1.3 times and 1.1 times that of Comparative Example 1, respectively. It was improved.
実施例9では、700℃で熱処理して、電気特性を評価したところ、遮断特性と耐電圧特性は、比較例1のそれぞれ1.2倍と1.1倍であり、熱処理により遮断特性が若干向上されていた。 In Example 9, the electrical characteristics were evaluated by heat treatment at 700 ° C., and the cutoff characteristics and the withstand voltage characteristics were 1.2 times and 1.1 times of Comparative Example 1, respectively. It was improved.
実施例10では、650℃で熱処理して、電気特性を評価したところ、遮断特性と耐電圧特性は、比較例1のそれぞれ1.1倍と1.1倍であり、熱処理により遮断特性はほとんど向上されていなかかった。これは熱処理温度が低く、導電率の改善効果が小さかったからである。 In Example 10, the electrical characteristics were evaluated by heat treatment at 650 ° C., and the cutoff characteristics and the withstand voltage characteristics were 1.1 times and 1.1 times that of Comparative Example 1, respectively. It did not improve. This is because the heat treatment temperature was low and the effect of improving conductivity was small.
以上の実施例6〜10の結果より、液相焼結後に熱処理すると電気特性、特に遮断特性の向上が可能となる。特に熱処理温度は、導電成分Cuの融点(1083℃)を基準にして、−20℃以下、−400℃以上の時に特性向上が顕著となる。熱処理温度が、導電成分Cuの融点を基準にして、−20℃より高いと、特性は悪くはないが、炉の制御が難しくなり、歩留まりが悪くなる。熱処理温度が、導電成分Cuの融点を基準にして、−400℃を下回ると、熱処理の効果が低く、改善効果が小さい。 From the results of Examples 6 to 10 described above, it is possible to improve the electrical characteristics, in particular, the blocking characteristics, when heat treatment is performed after liquid phase sintering. In particular, when the heat treatment temperature is −20 ° C. or lower and −400 ° C. or higher on the basis of the melting point (1083 ° C.) of the conductive component Cu, the characteristic improvement becomes remarkable. When the heat treatment temperature is higher than −20 ° C. on the basis of the melting point of the conductive component Cu, the characteristics are not bad, but the control of the furnace becomes difficult and the yield is deteriorated. When the heat treatment temperature is lower than −400 ° C. based on the melting point of the conductive component Cu, the heat treatment effect is low and the improvement effect is small.
(実施例11〜16)
前記比較例1〜4と実施例1〜10では、導電成分がCu、耐弧成分がCr、第3成分がW,Mo,Ta,WCである接点材料の事例について述べたが、本発明の主旨はこれに限るものではない。
(Examples 11 to 16)
In Comparative Examples 1 to 4 and Examples 1 to 10, examples of contact materials in which the conductive component is Cu, the arc resistant component is Cr, and the third component is W, Mo, Ta, and WC are described. The gist is not limited to this.
実施例11では、導電成分をAg、耐弧成分をWC、第3成分をFeとしたAg−20WC−1Fe接点を、液相焼結法で作製し、遮断特性と耐電圧特性を評価した結果、遮断特性と耐電圧特性は、第3成分を添加していない通常の液相焼結法で製造した時のAg−WC接点の、それぞれ1.3倍と1.2倍であった。 In Example 11, an Ag-20WC-1Fe contact with Ag as the conductive component, WC as the arc resistance component, and Fe as the third component was prepared by a liquid phase sintering method, and the breaking characteristics and the withstand voltage characteristics were evaluated. The breaking characteristics and the withstand voltage characteristics were 1.3 times and 1.2 times that of the Ag-WC contact when manufactured by the usual liquid phase sintering method without adding the third component, respectively.
実施例12では、導電成分をAg+Cu、耐弧成分をWC、第3成分をCoとしたAg/Cu−60WC−1Co接点を、液相焼結法で作製し、遮断特性と耐電圧特性を評価した結果、遮断特性と耐電圧特性は、第3成分を添加していない通常の液相焼結法で製造した時のAg−WC接点の、それぞれ1.2倍と1.2倍であった。 In Example 12, an Ag / Cu-60WC-1Co contact having a conductive component of Ag + Cu, an arc resistant component of WC, and a third component of Co was prepared by a liquid phase sintering method, and the breaking characteristics and the withstand voltage characteristics were evaluated. As a result, the breaking characteristics and the withstand voltage characteristics were 1.2 times and 1.2 times that of the Ag-WC contact when manufactured by the usual liquid phase sintering method without adding the third component, respectively. .
実施例13〜16では、導電成分をCuとし、耐弧成分をそれぞれ、W,Nb,WC,Cr+Wとし、第3成分をそれぞれ、Sb(1wt%),Al2O3(1wt%),WB(2wt%),TiN(2wt%)として、液相焼結により接点材料を製造して電気特性を評価した結果、遮断特性は、実施例13〜16全て、第3成分を添加していない通常の液相焼結で製造した時の接点の1.2倍であり、耐電圧特性は1.1倍であった。 In Examples 13 to 16, the conductive component is Cu, the arc resistant components are W, Nb, WC, and Cr + W, respectively, and the third components are Sb (1 wt%), Al 2 O 3 (1 wt%), and WB, respectively. (2 wt%), TiN (2 wt%) as a contact material was manufactured by liquid phase sintering, and the electrical characteristics were evaluated. As a result, all of Examples 13 to 16 were not added with the third component. It was 1.2 times that of the contact when manufactured by liquid phase sintering, and the withstand voltage characteristic was 1.1 times.
なお、第3成分が5wt%を越えると、遮断特性、耐電圧特性の少なくとも一方が悪化する。 When the third component exceeds 5 wt%, at least one of the cutoff characteristic and the withstand voltage characteristic is deteriorated.
(実施例17〜19)
前記比較例1〜4と実施例1〜16では、導電成分、耐弧成分、第3成分で構成される接点材料の事例について述べたが、本発明の主旨はこれに限るものではない。
(Examples 17 to 19)
In Comparative Examples 1 to 4 and Examples 1 to 16, examples of contact materials composed of a conductive component, an arc resistant component, and a third component have been described. However, the gist of the present invention is not limited to this.
実施例17〜19では、補助成分をそれぞれBi(0.1wt%),Te(5wt%),Te+Se(4wt%)とし、実施例3と同様に液相焼結法の1種である焼結溶浸法で、接点材料を製造して電気特性を評価した結果、遮断特性は、実施例17〜19全て、第3成分を添加していない通常の焼結溶浸法で製造した時の接点の1.2倍であり、耐電圧特性は1.1倍であった。 In Examples 17 to 19, the auxiliary components are Bi (0.1 wt%), Te (5 wt%), and Te + Se (4 wt%), respectively, which is one type of liquid phase sintering method as in Example 3. As a result of manufacturing the contact material by the sintering infiltration method and evaluating the electrical characteristics, the breaking characteristics were obtained when all the Examples 17 to 19 were manufactured by the normal sintering infiltration method without adding the third component. The contact point was 1.2 times that of the contact, and the withstand voltage characteristic was 1.1 times.
なお、補助成分が5wt%を越えると、遮断特性、耐電圧特性の少なくとも一方が悪化する。 When the auxiliary component exceeds 5 wt%, at least one of the cutoff characteristic and the withstand voltage characteristic deteriorates.
以上の結果が示すように、本発明によって真空バルブ用接点材料の遮断特性と耐電圧特性を向上させることが可能となる。 As can be seen from the above results, the present invention makes it possible to improve the interruption characteristics and withstand voltage characteristics of the contact material for vacuum valves.
(他の実施例)
なお、導電成分については、上記の実施例では、Cu,Ag,Ag+Cuでの記載しかないが、CuまたはAgを主成分とするならば、例えば微量のCr,Sn等を含有しても同様の効果が得られる。
(Other examples)
In the above embodiment, the conductive component is only described in terms of Cu, Ag, and Ag + Cu. However, if Cu or Ag is the main component, for example, a trace amount of Cr, Sn, or the like may be contained. Similar effects can be obtained.
また耐弧成分については、上記の実施例では、Cr,W,Nb,WC,Cr+Wでの記載しかないが、Cr,W,Nb,Ta,Ti,Mo及びこれらの炭化物の内の少なくとも1つを耐弧成分として使用しても、同様の効果が得られる。 In addition, regarding the arc-proof component, in the above-described embodiments, there is only description of Cr, W, Nb, WC, Cr + W, but at least one of Cr, W, Nb, Ta, Ti, Mo and their carbides. Even if is used as an arc-proof component, the same effect can be obtained.
さらに第3成分については、上記の実施例では、W,Mo,Ta,Co,Fe,Sb,WC,WB,Al2O3,TiNでの記載しかないが、W,Mo,Cr,Co,Fe,Nb,Ta,Ti,Al,Sb及びこれらの炭化物、硼化物、酸化物、窒化物の内の少なくとも1種類を第3成分として使用しても、同様の効果が得られる。 Further, regarding the third component, in the above embodiment, there is only description of W, Mo, Ta, Co, Fe, Sb, WC, WB, Al 2 O 3 , TiN, but W, Mo, Cr, Co, Even when at least one of Fe, Nb, Ta, Ti, Al, Sb and their carbides, borides, oxides, and nitrides is used as the third component, the same effect can be obtained.
補助成分についても、上記の実施例では、Bi,Te,Te+Seとした場合のみ記載しているが、Bi,Te,Seの内の少なくとも1つを補助成分としても、同様の効果が得られる。 The auxiliary component is also described in the above embodiment only when Bi, Te, Te + Se, but the same effect can be obtained even if at least one of Bi, Te, Se is used as the auxiliary component.
1…遮断室
2…絶縁容器
3a,3b…封着金具
4a,4b…蓋体
5,6…導電棒
7…固定電極
8…可動電極
9…ベローズ
10,11…アークシールド
12,14…ロウ付け部
13a…可動側接点
13b…固定側接点
DESCRIPTION OF
Claims (10)
The contact material for a vacuum valve according to claim 9, wherein the total content of the auxiliary components is 5 wt% or less.
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| JP2004206817A JP2006032036A (en) | 2004-07-14 | 2004-07-14 | Contact material for vacuum valves |
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