JP2006013019A - Method for manufacturing magnetic sensing element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a magnetic sensing element which prevents a conductive deposit from adhering to a magnetoresistive element and prevents a decrease in reproduction output.
A first metal layer 24 is used as a mask layer at the time of ion milling of a multilayer film T1. The lift-off resist conventionally used as a mask layer has a cut at the bottom, but the first metal layer 24 is laminated on the multilayer film T1 with a uniform film thickness, and no cut is formed. Accordingly, since the upper surface of the multilayer film T1 is completely covered with the first metal layer 24 and the insulating layer 23, the scrap of the multilayer film T1 scraped by ion milling is reattached to the upper surface of the multilayer film T1. Can be prevented.
[Selection] Figure 7

Description

  The present invention relates to a method of manufacturing a magnetic sensing element capable of increasing a reproduction output while suppressing current loss.

  FIG. 13 is a plan view of the magnetic detection element 1 having the magnetoresistive element 2, and FIG. 14 is a partial sectional view of the magnetic detection element 1 shown in FIG. 13 as viewed from the side facing the recording medium F. .

  The magnetic detection element 1 has a magnetoresistive element 2. Hard bias layers 3 and 3 are formed on both sides of the magnetoresistive element 2 in the track width direction (X direction in the drawing), and electrode layers 4 and 4 are stacked on the hard bias layers 3 and 3.

  As shown in FIG. 15, the magnetoresistive element 2 is made of an antiferromagnetic layer 5 made of PtMn, a fixed magnetic layer 6 made of a ferromagnetic material such as CoFe, or a nonmagnetic material such as Cu. A non-magnetic material layer 7, a free magnetic layer 8 made of a ferromagnetic material such as NiFe, and a spin valve type GMR element having a multilayer structure in which a protective layer 9 made of Ta or the like is sequentially laminated from the bottom It is.

  When no external magnetic field is applied, the magnetization of the free magnetic layer 8 is aligned in the X direction in the figure by the hard bias layers 3 and 3. When an external magnetic field is applied to the magnetoresistive element from the Y direction in the drawing, that is, from the direction (height direction) perpendicular to the track width direction of the magnetic detection element, the magnetization of the free magnetic layer 8 rotates. The magnetization direction of the pinned magnetic layer 6 is pinned by an exchange coupling magnetic field with the antiferromagnetic layer 5, and the relative orientation of the magnetization of the free magnetic layer 8 and the magnetization of the pinned magnetic layer 6 changes depending on the magnitude of the external magnetic field. To do. When the relative orientation of the magnetization of the free magnetic layer 8 and the magnetization of the pinned magnetic layer 6 changes, the resistance value of the magnetoresistive element 2 changes. This change in resistance value is detected as a change in the current flowing in the magnetoresistive effect element 2 or the voltage between the electrode layers 4 and 4.

  The length of the magnetoresistive effect element 2 in the track width direction (X direction in the drawing) is the track width Tw of the magnetic detection element 1, and the length in the height direction (Y direction in the drawing) is the length H of the magnetic detection element 1 in the height direction. .

A method for manufacturing the magnetic detection element 1 will be described.
First, an antiferromagnetic layer 5 formed of PtMn or the like on a substrate, a fixed magnetic layer 6 formed of a ferromagnetic material such as CoFe, a nonmagnetic material layer 7 formed of a nonmagnetic material such as Cu, NiFe, or the like A free magnetic layer 8 made of the above ferromagnetic material and a protective layer 9 made of Ta or the like are formed in a solid film state, and a multilayer film T to be the magnetoresistive effect element 2 is formed.

  Next, as shown in FIG. 16, the recesses 10 are formed by scraping both sides of the multilayer film T while leaving the region of the track width Tw. Next, as shown in FIG. 17, hard bias layers 3 and 3 and electrode layers 4 and 4 made of Co—Pt are formed in the recesses 10 and 10. A mask layer R (not shown in FIG. 16) made of resist is formed on the multilayer film T (magnetoresistance effect element 2), and etching of the recesses 10 and 10 and a hard bias layer are performed using the mask layer R as a mask. 3, 3 and electrode layers 4 and 4 are formed.

  Next, as shown in the plan view of FIG. 18, the multilayer film T and the electrode layers 4 and 4 in the height direction front (the direction opposite to the Y direction in the drawing) from the line B serving as the rear end portion of the magnetic detection element 2 are resisted. The multilayer film T and the electrode layers 4 and 4 behind the line B in the height direction (the Y direction in the drawing) are shaved by ion milling.

  FIG. 19 is a cross-sectional view of the multilayer film T and the mask layer R1 in the state of FIG. 18 cut along the line EE and viewed from the direction of the arrow. FIG. (Direction) is a cross-sectional view showing a state after the multi-layer film T and the electrode layers 4 and 4 are shaved. Note that the front end A of the multilayer film T is located at an arbitrary position in front of the front end of the completed magnetoresistive element 2 in the height direction (the direction opposite to the Y direction in the drawing).

  When the mask layer R1 is removed, the multilayer film T is polished from the front end A, and the height in the height direction is set to H, the magnetic detection element 1 shown in FIG. 21 is obtained.

Such a method of manufacturing a magnetic detection element is described in Patent Document 1.
JP-A-11-175922 (second page, third page, FIG. 5, FIG. 6, FIG. 7)

  In the conventional manufacturing method shown in FIGS. 16 to 21, the mask layer R1 is formed using a two-layer resist for lift-off. In this two-layer resist, a cut portion S is formed to facilitate removal of the mask layer.

  However, in the ion milling process shown in FIG. 19, the scraps of the multilayer film T, the hard bias layers 3 and 3, and the electrode layers 4 and 4 enter the notch S, and as shown in FIG. The kimono G adheres on the multilayer film T1.

  After the process shown in FIG. 22, an insulating layer 10 made of an insulating material such as alumina is formed around the multilayer film T. Thereafter, the mask layer R1 is removed, and an insulating gap layer 11 and a magnetic material shield layer 12 are formed on the insulating layer 10 and the multilayer film T as shown in FIG. Finally, the side of the multilayer film T, the gap layer 11 and the shield layer 12 facing the recording medium (the left side in the figure) is polished so that the DC resistance value DCR of the magnetoresistive effect element 2 becomes a predetermined value. The height H of the resistance effect element is adjusted.

  If the conductive deposit G adheres to the multilayer film T as shown in FIG. 25, a shunt current flows through the deposit G, and the reproduction output of the magnetic detection element decreases. In particular, as the height H in the height direction decreases with the downsizing of the magnetic sensing element, the ratio of the volume of the deposit G to the volume of the magnetoresistive effect element 2 increases and the shunt current loss increases.

  Further, the deposit G adheres to the upper surface of the multilayer film T, so that the insulating property of the gap layer 11 decreases, leak current easily flows from the magnetoresistive effect element 2 to the shield layer 12, and the reproduction output decreases. Further, the upper surface shape of the magnetoresistive effect element 2 becomes irregular, and it becomes difficult to keep the quality of the magnetic detection element uniform.

  The present invention is for solving the above-described conventional problems, and prevents the deposit of conductive material from accumulating on the upper surface of the magnetoresistive effect element, thereby reducing the shunt current loss of the magnetic sensing element and reproducing output. An object of the present invention is to provide a method of manufacturing a magnetic detection element for providing a magnetic detection element capable of improving the magnetic field.

The present invention relates to a method of manufacturing a magnetic sensing element having a magnetoresistive effect element in which a magnetic material layer and a nonmagnetic material layer are laminated.
(A) forming a multilayer film in which a magnetic material layer and a nonmagnetic material layer are laminated on a substrate;
(B) forming an insulating layer and a first metal layer on the multilayer film;
(C) forming a mask layer having a predetermined shape on the first metal layer, and making the first metal layer and the insulating layer into the predetermined shape by reactive ion etching;
(D) using the first metal layer having a predetermined shape as a mask, and cutting the insulating layer and the multilayer film using ion milling to form the multilayer film in the predetermined shape. .

  In the present invention, the first metal layer is used as a mask layer during ion milling of the multilayer film. Conventionally, the lift-off resist used as a mask layer has a cut at the bottom, but the first metal layer is laminated with a uniform thickness on the multilayer film, and no cut is formed. Therefore, since the upper surface of the multilayer film is completely covered with the first metal layer, it is possible to prevent the scrap of the multilayer film scraped by ion milling from reattaching to the upper surface of the multilayer film.

  Moreover, in this invention, it can suppress that the upper surface of the said multilayer film is shaved excessively by performing the etching of the said 1st metal layer using reactive ion etching. Furthermore, since the multilayer film is processed using ion milling, corrosion of the multilayer film can be prevented.

  In the present invention, it is preferable that the first metal layer is formed using a material whose milling speed by ion milling using Ar ions is slower than the milling speed of the multilayer film.

Thereby, the film thickness of the first metal layer can be reduced.
Specifically, for example, the first metal layer is preferably formed using any one or more of Ta, W, and Ti.

  In the present invention, it is preferable that in the step (c), a second metal layer is laminated on the first metal layer, and this second metal layer is used as the mask layer.

  When the second metal layer is used as the mask layer in the etching process of the first metal layer, the side surface of the first metal layer can be a surface close to a surface perpendicular to the substrate surface. As a result, the side surface of the multilayer film is also a surface close to the surface perpendicular to the substrate surface, and the dimensional accuracy of the magnetoresistive element can be improved.

  The second metal layer is preferably formed using, for example, one or more of Cr, Ni, or Fe.

In the present invention, CF ₄ , C ₃ F ₈ , or SF ₆ is used as the reactive ion etching gas, for example.

In the present invention,
Between the step (a) and the step (b),
(E) scraping both side portions of the multilayer film in the first direction to make the dimension of the multilayer film in the first direction a predetermined length;
When the direction intersecting the first direction is the second direction,
In the step (c), the length dimension of the first metal layer in the second direction is preferably set to a predetermined length.

  The ion milling using the first metal layer as a mask, which is a feature of the present invention, is more effective when performed after the step of making the dimension of the multilayer film in the first direction a predetermined length.

Further, the first direction is a track width direction of the magnetic detection element, and the second direction is a height direction orthogonal to the first direction,
After the step (d),
(F) The present invention is particularly effective when the surface of the magnetic sensing element facing the recording medium is scraped so that the length in the height direction of the magnetoresistive element is 0.15 μm or less.

In the present invention, the milling speed of the first metal layer is R1 (Å / min), the film thickness of the first metal layer is t1 (Å), the milling speed of the multilayer film is R2 (Å / min), and the multilayer When the film thickness is t2 (Å), the milling speed of the insulating layer is R3 (Å / min), and the thickness of the insulating layer is t3 (Å),
(T1 / R1) + (t3 / R3)> t2 / R2
It is preferable that Here, the milling speed is a scraping amount per unit time of the first metal layer, the insulating layer, and the multilayer film.

  When the film thickness and the milling speed of each layer are set as described above, the first metal layer or the insulating layer is formed on the multilayer film remaining when the multilayer film is ground by ion milling in the step (d). As a result, the upper surface of the multilayer film is protected.

Further, the milling speed of the first metal layer is R1 (Å / min), the film thickness of the first metal layer is t1 (Å), the milling speed of the multilayer film is R2 (Å / min), When the film thickness is t2 (Å),
(T1 / R1) <(t2 / R2)
It is preferable that Here, the milling speed is the amount of shaving per unit time of the first metal layer and the multilayer film.

  When the film thickness and milling speed of each layer are set as described above, when the grinding by the ion milling of the multilayer film is completed in the step (d), the remaining first metal layer on the multilayer film is completely As a result, only the insulating layer remains.

  In the present invention, the first metal layer is used as a mask layer during ion milling of the multilayer film. Conventionally, the lift-off resist used as a mask layer has a cut at the bottom, but the first metal layer is laminated with a uniform thickness on the multilayer film, and no cut is formed. Therefore, since the upper surface of the multilayer film is completely covered with the first metal layer, it is possible to prevent the scrap of the multilayer film scraped by ion milling from reattaching to the upper surface of the multilayer film.

  Moreover, in this invention, it can suppress that the upper surface of the said multilayer film is shaved excessively by performing the etching of the said 1st metal layer using reactive ion etching. Furthermore, since the multilayer film is processed using ion milling, corrosion of the multilayer film can be prevented.

  FIG. 1 is a plan view showing a manufacturing process of a magnetic detection element for illustrating an embodiment of a manufacturing method of the magnetic detection element of the present invention, and FIGS. 2 and 3 show the magnetic detection element in the manufacturing process as a recording medium. It is the fragmentary sectional view seen from the opposing surface side. 4 is a plan view showing a manufacturing process of the magnetic detection element, and FIGS. 5 to 10 are cross-sectional views of the magnetic detection element in the manufacturing process taken along line CC in FIG. .

  The plan view of the magnetic detection element formed according to the present embodiment is the same as the plan view shown in FIG. 13, and the sectional view seen from the side facing the recording medium is the partial sectional view shown in FIG. Since it is the same, description is abbreviate | omitted. An embodiment of a method for producing a magnetic sensing element of the present invention will be described.

  First, a shield layer 21 formed of NiFe or the like, a gap layer 22 formed of an insulating material such as alumina or silicon oxide, and a multilayer film T1 serving as a magnetoresistive effect element are formed on the substrate. The multilayer film T1 includes, from below, an antiferromagnetic layer formed of PtMn or the like, a fixed magnetic layer formed of a ferromagnetic material such as CoFe, a nonmagnetic material layer formed of a nonmagnetic material such as Cu, or a strong layer such as NiFe. A free magnetic layer made of a magnetic material and a protective layer made of Ta or the like are formed in a solid film state, and become a magnetoresistive element. The magnetoresistive effect element completed in the present embodiment is shown as a magnetoresistive effect element 20 in FIG.

Next, as shown in FIG. 1, the recesses 14 and 14 are formed by scraping both sides of the multilayer film T1 while leaving the region of the track width Tw. The remaining region of the multilayer film T1 becomes the magnetoresistive element 20. Next, as shown in FIG. 2, hard bias layers 15 and 15 and electrode layers 16 and 16 made of Co—Pt are formed in the recesses 14 and 14. A mask layer R2 (not shown in FIG. 1) made of resist is formed on the multilayer film T1, and etching of the recesses 14 and 14 and the hard bias layers 15 and 15 and the electrode layer 16 are performed using the mask layer R2 as a mask. , 16 are formed.
After the electrode layers 16 are formed, the mask layer R2 is removed.

Next, in the process shown in FIG. 3, an insulating layer 23, a first metal layer 24, and a second metal layer 25 are formed on the multilayer film T1 and the electrode layers 16 and 16 by sputtering. The insulating layer 23 is preferably formed using alumina (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), and the first metal layer 24 using any one or more of Ta, W, and Ti. Moreover, it is preferable to form the 2nd metal layer 25 using any 1 type, or 2 or more types of Cr, Ni, or Fe.

The second metal layer 25 is preferably a mask layer.
In the present invention, the milling speed of the first metal layer 24 is R1 (Å / min), the film thickness of the first metal layer 24 is t1 (Å), the milling speed of the multilayer film T1 is R2 (Å / min), and the multilayer film. When the thickness of T1 is t2 (Å), the milling speed of the insulating layer 23 is R3 (Å / min), and the thickness of the insulating layer 23 is t3 (Å),
(T1 / R1) + (t3 / R3)> t2 / R2
Each film thickness is set so that Here, the milling speed is a scraping amount per unit time of the first metal layer 24, the insulating layer 23, and the multilayer film T1 by ion milling using Ar under the same conditions.

  For example, the film thickness t1 of the first metal layer 24 is 200 mm to 350 mm, the film thickness t2 of the multilayer film T1 is 250 mm to 400 mm, the film thickness t3 of the insulating layer 25 is 50 mm to 100 mm, and the film thickness t4 of the second metal layer 25 is 20 mm. ~ 50cm.

Further, the milling speed of the first metal layer 24 is R1 (Å / min), the film thickness of the first metal layer 24 is t1 (Å), the milling speed of the multilayer film T1 is R2 (Å / min), and the multilayer film T1 When the film thickness is t2 (Å),
(T1 / R1) <(t2 / R2)
It is preferable to set each film thickness so that

  Next, as shown in the plan view of FIG. 4, the second metal layer 25, electrode layer 16, 16 is masked with a mask layer R3 made of resist.

  FIG. 5 is a cross-sectional view of the second metal layer 25, the first metal layer 24, the insulating layer 23, the multilayer film T1, and the mask layer R3 in the state shown in FIG.

  The front end A1 of the mask layer R3 is located at an arbitrary position in front of the front end of the completed magnetoresistive element 20 (indicated by a two-dot chain line DD in FIG. 4) in the height direction (the direction opposite to the Y direction in the drawing). To do.

  Next, in the step shown in FIG. 6, the region of the second metal layer 25 that is not masked by the mask layer R <b> 3 is shaved by ion milling. After the second metal layer 25 is processed by ion milling, the mask layer R3 is removed.

Next, in the step shown in FIG. 7, the first metal layer 24 and the insulating layer 23 are etched by reactive ion etching using the second metal layer 25 as a mask. For example, CF ₄ , C ₃ F ₈ , or SF ₆ is used as a reactive ion etching gas.

  Further, in the step shown in FIG. 8, the multilayer film T1, the electrode layers 16 and 16, and the hard bias layers 15 and 15 are removed by ion milling using the first metal layer 24 and the insulating layer 23 as a mask.

As described above, the milling speed of the first metal layer 24 is R1 (Å / min), the film thickness of the first metal layer 24 is t1 (Å), the milling speed of the multilayer film T1 is R2 (Å / min), When the film thickness of the film T1 is t2 (Å), the milling speed of the insulating layer 23 is R3 (Å / min), and the film thickness of the insulating layer 23 is t3 (Å),
(T1 / R1) + (t3 / R3)> t2 / R2
Each film thickness is set so that For this reason, when the unmasked region of the multilayer film T1 is completely removed by ion milling, either the first metal layer 24 or the insulating layer 23 still remains, and the function as the mask layer is completely achieved. Can fulfill.

  Furthermore, by setting the film thicknesses so that (t1 / R1) <(t2 / R2), the first metal is removed when the unmasked region of the multilayer film T1 is completely shaved by ion milling. The layer 24 is completely scraped so that only the insulating layer 23 remains.

Next, in the process shown in FIG. 9, a gap layer 30 made of alumina (Al ₂ O ₃ ) or silicon oxide (SiO ₂ ) is formed on the gap layer 22 and the insulating layer 23 by sputtering, and the gap is formed. A shield layer 31 made of a magnetic material such as NiFe is formed on the layer 30 by plating or sputtering.

  Further, as shown in FIG. 10, when the front end T1b of the multilayer film T1 is polished and the length in the height direction is set to H1, the magnetic detection element 40 having the magnetoresistive effect element 20 is obtained.

  In the present invention, the first metal layer 24 is used as a mask layer at the time of ion milling of the multilayer film T1. The lift-off resist conventionally used as a mask layer has a cut at the bottom, but the first metal layer 24 is laminated on the multilayer film T1 with a uniform film thickness, and no cut is formed. Accordingly, since the upper surface of the multilayer film T1 is completely covered with the first metal layer 24 and the insulating layer 23, the scrap of the multilayer film T1 scraped by ion milling is reattached to the upper surface of the multilayer film T1. Can be prevented.

  Moreover, in this invention, it can suppress that the upper surface of multilayer film T1 is scraped excessively by etching the 1st metal layer 24 using reactive ion etching. Furthermore, since the multilayer film T1 is processed using ion milling, corrosion of the multilayer film T1 can be prevented.

  In the present invention, the reactive metal etching may be performed using the resist layer R3 as a mask without stacking the second metal layer 25 on the first metal layer 24. However, as shown in FIG. 7, when the second metal layer 25 is used as a mask layer in the etching process of the first metal layer 24, the side surfaces 24a and 24a of the first metal layer 24 and the side surfaces 23a and 23a of the insulating layer 23 are used. Can be a plane close to a plane perpendicular to the substrate surface. As a result, the side surfaces Ta and Ta of the multilayer film T1 are also close to the surface perpendicular to the substrate surface, and the dimensional accuracy of the magnetoresistive element can be improved.

The first metal layer 24 is preferably formed using a material whose milling speed by ion milling using Ar ions is lower than the milling speed of the multilayer film T1.
Thereby, the film thickness of the first metal layer 24 can be reduced.

  In the present embodiment, as shown in FIG. 1, first, both side portions of the multilayer film T1 in the track width direction (first direction) are shaved so that the dimension Tw of the multilayer film T1 in the track width direction becomes a predetermined length. Thereafter, an ion milling process is performed in which the length dimension in the height direction (second direction) orthogonal to the track width direction is set to a predetermined length.

  When performing an ion milling process in which the length dimension in the height direction is set to a predetermined length after the ion milling process in which the dimension in the track width direction of the multilayer film T1 is set to Tw, a conventional two-layer resist is used as a mask layer. When the ion milling used is used, deposits are likely to adhere to the upper surface of the multilayer film T1.

  As in the present invention, ion milling using the first metal layer 24 as a mask is the length in the height direction (second direction) after the step of setting the dimension Tw of the multilayer film T1 in the track width direction to a predetermined length. It is effective when used in an ion milling process in which the length is set to a predetermined length.

  However, an ion milling process for setting the dimension of the multilayer film T1 in the track width direction to Tw may be performed using the first metal layer 24 as a mask.

  In the present invention, since no extraneous conductive deposits adhere to the magnetoresistive effect element, even if a magnetoresistive effect element having a height direction length H1 of 0.15 μm or less is formed, the reproduction output does not decrease.

  The completed magnetic detection element 40 has the magnetoresistive effect element 20. Hard bias layers 15 and 15 are formed on both sides of the magnetoresistive element 20 in the track width direction (X direction in the drawing), and electrode layers 16 and 16 are stacked on the hard bias layers 15 and 15.

  As shown in FIG. 11, the magnetoresistive effect element 20 is formed of an antiferromagnetic layer 35 formed of PtMn or the like, a fixed magnetic layer 36 formed of a ferromagnetic material such as CoFe, or a nonmagnetic material such as Cu. This is a spin valve type GMR element in which a nonmagnetic material layer 37, a free magnetic layer 38 made of a ferromagnetic material such as NiFe, and a protective layer 39 made of Ta or the like are sequentially laminated from the bottom.

  In the state where no external magnetic field is applied, the magnetization of the free magnetic layer 38 is aligned in the X direction by the hard bias layers 15 and 15. When an external magnetic field is applied to the magnetoresistive effect element 20 from the Y direction shown in the figure, that is, from a direction (height direction) orthogonal to the track width direction of the magnetic detection element, the magnetization of the free magnetic layer 38 rotates. The magnetization direction of the pinned magnetic layer 36 is pinned by an exchange coupling magnetic field with the antiferromagnetic layer 35, and the relative orientation of the magnetization of the free magnetic layer 38 and the magnetization of the pinned magnetic layer 36 changes depending on the magnitude of the external magnetic field. To do. When the relative orientation of the magnetization of the free magnetic layer 38 and the magnetization of the pinned magnetic layer 36 changes, the resistance value of the magnetoresistive element 20 changes. This change in resistance value is detected as a current flowing in the magnetoresistive effect element 20 or a change in voltage between the electrode layers 16 and 16.

  The length of the magnetoresistive effect element 20 in the track width direction (X direction in the figure) is the track width Tw of the magnetic detection element 40, and the length in the height direction (Y direction in the figure) is the height direction length H1 of the magnetic detection element 40. .

  The present invention is not limited to a method for manufacturing a magnetic detection element in which a sense current flows in a direction parallel to the film surface of the magnetoresistive effect element, but also a method for manufacturing a CPP type magnetic detection element in which a sense current flows in a direction perpendicular to the film surface of the magnetoresistive effect element. Can also be used. Note that when forming the CPP type magnetic sensing element, the insulating layer 23 becomes unnecessary, and the first metal layer 24 can be formed directly on the multilayer film T1.

  The reproduction output of the magnetic detection element formed by the conventional manufacturing method and the magnetic detection element formed by using the manufacturing method of the present invention were compared.

  In the magnetic sensing element formed by the conventional manufacturing method, the conductive deposit G as shown in FIG. 25 adheres to the upper surface of the magnetoresistive effect element.

  The decrease in the reproduction output due to the adhesion G was examined. The track width dimension Tw of the magnetoresistive effect element 2 shown in FIGS. 14 and 25 was 0.14 μm, and the film thickness L was 30 nm to 35 nm. Since the deposit G crosses the upper surface of the magnetoresistive effect element 2, the sense current supplied from the electrode layers 16 and 16 flows to the deposit G in addition to the magnetoresistive effect element 2, and the magnetic sensing element is reproduced. Output decreases. The film thickness l of the deposit G was 5 nm to 15 nm, and the length h in the height direction was 30 nm to 50 nm.

The reproduction output of the magnetic detection element having the magnetoresistive effect element 2 to which the deposit G was attached was set to 100%, and the reproduction output of the magnetic detection element having the magnetoresistive effect element 2 to which the deposit G was adhered was determined.
The results are shown in FIG.

  The horizontal axis of FIG. 12 indicates the height H in the height direction of the magnetoresistive effect element 2, and the vertical axis indicates the reproduction output of the magnetic detection element having the magnetoresistive effect element 2 to which the deposit G is not attached as 100%. It is the reproduction output efficiency of the magnetic sensing element having the magnetoresistive effect element 2 to which the deposit G is adhered.

  It estimated by assuming the case where the specific resistance of the deposit G is 25 Ωcm, 50 Ωcm, 100 Ωcm, and 150 Ωcm.

Referring to FIG. 12, when the length H in the height direction of the magnetoresistive effect element 2 is 0.15 μm or less, when the specific resistance of the deposit G is 100 Ωcm ² , the reproduction output of the magnetism detection element is the magnetic detection without the deposit G. It becomes 95% or less of the reproduction output of the element. Similarly, when the specific resistance of the deposit G is 50 Ωcm ² , the output of the magnetic detection element is 90% or less, and when the specific resistance of the deposit G is 25 Ωcm ² , the output of the magnetic detection element is 80% or less.

  On the other hand, in the magnetic detection element of the embodiment of the present invention, the deposit G is not adhered, and the reproduction output is not lowered. When the height in the height direction is 0.13 μm, the magnetic sensing element of the example in which the addition of the deposit G is not seen can improve the output by about 10% compared to the magnetic sensing element formed by using the conventional manufacturing method. confirmed.

  As described above, the present invention can prevent a decrease in output of the magnetic detection element even when the length in the height direction of the magnetoresistive effect element is 0.15 μm or less.

The fragmentary top view which shows embodiment of the manufacturing method of the magnetic detection element of this invention, The fragmentary sectional view which shows embodiment of the manufacturing method of the magnetic detection element of this invention, The fragmentary sectional view which shows embodiment of the manufacturing method of the magnetic detection element of this invention, The fragmentary top view which shows embodiment of the manufacturing method of the magnetic detection element of this invention, The fragmentary sectional view which shows embodiment of the manufacturing method of the magnetic detection element of this invention, The fragmentary sectional view which shows embodiment of the manufacturing method of the magnetic detection element of this invention, The fragmentary sectional view which shows embodiment of the manufacturing method of the magnetic detection element of this invention, The fragmentary sectional view which shows embodiment of the manufacturing method of the magnetic detection element of this invention, The fragmentary sectional view which shows embodiment of the manufacturing method of the magnetic detection element of this invention, The fragmentary sectional view which shows embodiment of the manufacturing method of the magnetic detection element of this invention, The fragmentary sectional view of the magnetoresistive effect element which constitutes the magnetic sensing element of the present invention, A graph showing a decrease in reproduction output of the magnetic sensing element when conductive deposits adhere to the magnetoresistive effect element; A plan view of a conventional magnetic detection element, Partial sectional view of a conventional magnetic detection element, A partial cross-sectional view of a magnetoresistive effect element constituting a conventional magnetic detection element, A plan view showing a conventional method of manufacturing a magnetic detection element, Partial sectional view showing a conventional method of manufacturing a magnetic detection element, A plan view showing a conventional method of manufacturing a magnetic detection element, Partial sectional view showing a conventional method of manufacturing a magnetic detection element, Partial sectional view showing a conventional method of manufacturing a magnetic detection element, Partial sectional view showing a conventional method of manufacturing a magnetic detection element, Partial sectional view showing a conventional method of manufacturing a magnetic detection element, Partial sectional view showing a conventional method of manufacturing a magnetic detection element, Partial sectional view showing a conventional method of manufacturing a magnetic detection element, Partial sectional view showing a conventional method of manufacturing a magnetic detection element,

Explanation of symbols

T1 multilayer film 15 hard bias layer 16 electrode layer 20 magnetoresistive effect element 21 shield layer 22 gap layer 23 insulating layer 24 first metal layer 25 second metal layer R1 mask layer 30 gap layer 31 shield layer

Claims (10)

In a method of manufacturing a magnetic sensing element having a magnetoresistive element in which a magnetic material layer and a nonmagnetic material layer are laminated,
(A) forming a multilayer film in which a magnetic material layer and a nonmagnetic material layer are laminated on a substrate;
(B) forming an insulating layer and a first metal layer on the multilayer film;
(C) forming a mask layer having a predetermined shape on the first metal layer, and making the first metal layer and the insulating layer into the predetermined shape by reactive ion etching;
(D) A method of manufacturing a magnetic sensing element, comprising: using the first metal layer having a predetermined shape as a mask, scraping the multilayer film using ion milling to make the multilayer film have the predetermined shape.   2. The method of manufacturing a magnetic sensing element according to claim 1, wherein the first metal layer is formed using a material having a milling rate by ion milling using Ar ions lower than the milling rate of the multilayer film.   2. The method of manufacturing a magnetic sensing element according to claim 1, wherein the first metal layer is formed using one or more of Ta, W, and Ti.   4. The magnetic sensing element according to claim 1, wherein, in the step (c), a second metal layer is laminated on the first metal layer, and the second metal layer is used as the mask layer. 5. Method.   The method for manufacturing a magnetic detection element according to claim 4, wherein the second metal layer is formed using one or more of Cr, Ni, or Fe. 6. The method of manufacturing a magnetic detection element according to claim 1, wherein CF ₄ , C ₃ F ₈ , or SF ₆ is used as the reactive ion etching gas. Between the step (a) and the step (b),
(E) cutting both side portions in the first direction of the multilayer film to make the dimension of the multilayer film in the first direction a predetermined length;
When the direction intersecting the first direction is the second direction,
The method for manufacturing a magnetic detection element according to claim 1, wherein in the step (c), the length dimension of the first metal layer in the second direction is set to a predetermined length. The first direction is a track width direction of the magnetic detection element, the second direction is a height direction orthogonal to the first direction,
After the step (d),
(F) The method of manufacturing a magnetic detection element according to claim 7, wherein the surface of the magnetic detection element facing the recording medium is scraped so that the length in the height direction of the magnetoresistive effect element is 0.15 μm or less. The milling speed of the first metal layer is R1 (Å / min), the film thickness of the first metal layer is t1 (Å), the milling speed of the multilayer film is R2 (Å / min), and the film thickness of the multilayer film is Is t2 (Å), the milling speed of the insulating layer is R3 (Å / min), and the film thickness of the insulating layer is t3 (Å).
(T1 / R1) + (t3 / R3)> t2 / R2
The method of manufacturing a magnetic detection element according to claim 1,
Here, the milling speed is a scraping amount per unit time of the first metal layer, the insulating layer, and the multilayer film. The milling speed of the first metal layer is R1 (Å / min), the film thickness of the first metal layer is t1 (Å), the milling speed of the multilayer film is R2 (Å / min), and the film thickness of the multilayer film is Is t2 (Å),
(T1 / R1) <(t2 / R2)
A method for manufacturing a magnetic sensing element according to any one of claims 1 to 9,
Here, the milling speed is the amount of shaving per unit time of the first metal layer and the multilayer film.

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