JP2005268185A - Manufacturing method and device of organic el display panel - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an organic EL display panel in which occurrence of a leakage current can be prevented effectively, and light emission failure or destruction of the organic EL element can be prevented surely. <P>SOLUTION: This is the manufacturing method of the organic EL display panel provided with a substrate, a transparent hole injection electrode, an electron injection electrode, and an organic layer including an organic light-emitting layer between the hole injection electrode and the electron injection electrode. On a surface of the hole injection electrode, in order that the surface of the hole injection electrode is uniformly covered, this is provided with a step in which the organic light-emitting layer is formed by forming a vapor deposition layer by vapor deposition. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method and an apparatus for manufacturing an organic EL (electroluminescence) display panel, and more specifically, it is possible to effectively prevent the occurrence of leakage current, and to prevent light emission failure and destruction of an organic EL element. The present invention relates to a method and an apparatus for manufacturing an organic EL display panel that can be surely prevented.

  In recent years, organic EL elements have attracted much attention.

The organic EL element is formed of a transparent hole injection electrode formed of tin-doped indium oxide (ITO) or the like, an organic light emitting layer containing an organic fluorescent material, and a metal having a small work function such as magnesium. It has an electrode (electron injection electrode) as a basic structure, and has a feature that extremely high luminance of several hundred to several tens of thousands of cd / m ² can be obtained by a voltage of about 10 volts.

  An organic EL display panel including such an organic EL element is expected to be applied to a display device, particularly a color display device.

  An organic EL display panel is usually formed by forming an organic light emitting layer by vapor deposition on a plurality of transparent hole injection electrodes formed in a row on an insulating transparent substrate, or a hole transport layer, an organic light emitting layer. And an electron transport layer are sequentially formed by vapor deposition, and a plurality of electron injection electrodes are formed by vapor deposition on the organic light emitting layer or the electron transport layer so as to intersect with the plurality of hole injection electrodes. Has been.

  However, when an organic EL display panel is manufactured by such a vacuum process, foreign matter is likely to be mixed in. If foreign matter exists on the hole injection electrode, an organic light emitting layer formed on the hole injection electrode by vapor deposition. Alternatively, the thickness of the hole transport layer is reduced in the vicinity of the foreign matter. As a result, when the electron injection electrode is formed by vapor deposition on the organic light emitting layer or the electron transport layer, the hole injection electrode and the electron injection electrode When the distance is uneven and a voltage is applied to the organic EL display panel, a leak current is generated in a portion where the hole injection electrode and the electron injection electrode are close to each other, resulting in a light emission failure. There was a problem that the organic EL element was destroyed.

  Conventionally, such a problem has been solved by covering the foreign matter by covering the foreign matter with an insulating film or by heating the organic light emitting layer or the electron transport layer to a temperature not lower than the glass transition point and not higher than the melting point. It was.

  However, in order to solve this problem by covering the foreign matter with an insulating film, it is difficult to selectively cover only the foreign matter, and the organic light-emitting layer or the electron transport layer is formed on the glass transition layer. It is difficult to select an appropriate material for forming the organic light emitting layer or the electron transport layer when the problem is solved by heating to a temperature not lower than the point and not higher than the melting point and covering the foreign matter. There was a problem that there was.

  The same problem occurs when the convex portion is formed on the hole injection electrode due to the foreign matter or regardless of the foreign matter.

  An organic light emitting layer is formed by vapor deposition on a plurality of electron injection electrodes formed in a row on an insulating substrate, or an electron transport layer, an organic light emitting layer and a hole transport layer are sequentially formed by vapor deposition. Furthermore, foreign matter is mixed even when an organic EL display panel is formed by forming a hole injection electrode by vapor deposition on the organic light emitting layer or hole transport layer so as to intersect with a plurality of hole injection electrodes. When I did, there was a similar problem.

  Accordingly, an object of the present invention is to provide a method for manufacturing an organic EL display panel that can effectively prevent the occurrence of leakage current and can reliably prevent light emission defects and destruction of organic EL elements. To do.

  Another object of the present invention is to provide an organic EL display panel manufacturing apparatus that can effectively prevent the occurrence of leakage current and can reliably prevent light emission failure and destruction of organic EL elements. is there.

  An object of the present invention is a method of manufacturing an organic EL display panel including a substrate, two electrodes at least one of which is transparent, and an organic layer including at least one organic light emitting layer between the two electrodes. The organic layer is formed by forming a vapor deposition layer by vapor deposition so that one surface of the two electrodes is uniformly covered on one surface of the two electrodes. This is achieved by a method for manufacturing an organic EL display panel.

  According to the present invention, the vapor deposition layer is formed by vapor deposition so that one surface of the two electrodes is uniformly covered, and the organic layer including at least one organic light emitting layer is formed. Even when foreign matter is present on the hole injection electrode or electron injection electrode due to contamination, a convex portion is formed on the hole injection electrode or electron injection electrode due to the foreign matter or regardless of the foreign matter. Even in this case, an organic light emitting layer or a hole transport layer or an organic light emitting layer or an electron transport layer having a substantially uniform film thickness can be formed by vapor deposition on the hole injection electrode or the electron injection electrode. Since it is always possible to form the hole injection electrode and the electron injection electrode at a desired distance, when a voltage is applied to the organic EL display panel , A leakage current is generated, the light emission failure occurs can be effectively prevented, organic EL elements it is possible to reliably prevent the breakdown.

  In a preferred embodiment of the present invention, the organic light-emitting layer is formed by vapor deposition so that one surface of the two electrodes is uniformly covered on one surface of the two electrodes. Configured to form a layer.

  In a preferred embodiment of the present invention, the two electrodes are constituted by a transparent hole injection electrode and an electron injection electrode so that the surface of the hole injection electrode is uniformly covered on the surface of the hole injection electrode. In addition, the organic light emitting layer is formed by forming the vapor deposition layer by vapor deposition.

  In another preferred embodiment of the present invention, the two electrodes are constituted by a transparent hole injection electrode and an electron injection electrode, and the surface of the hole injection electrode is uniformly covered on the surface of the hole injection electrode. As shown, the vapor deposition layer is formed by vapor deposition to form a hole transport layer.

  In still another preferred embodiment of the present invention, the two electrodes are constituted by a hole injection electrode and a transparent electron injection electrode, and the surface of the hole injection electrode is uniformly formed on the surface of the hole injection electrode. The vapor deposition layer is formed by vapor deposition so as to be covered, and the organic light emitting layer is formed.

  In still another preferred embodiment of the present invention, the two electrodes are constituted by a hole injection electrode and a transparent electron injection electrode, and the surface of the hole injection electrode is uniformly formed on the surface of the hole injection electrode. The vapor deposition layer is formed by vapor deposition so as to be covered, and a hole transport layer is formed.

  In still another preferred embodiment of the present invention, the two electrodes are constituted by a transparent hole injection electrode and an electron injection electrode, and the surface of the electron injection electrode is uniformly formed on the surface of the electron injection electrode. The vapor deposition layer is formed by vapor deposition so as to be covered, and the organic light emitting layer is formed.

  In still another preferred embodiment of the present invention, the two electrodes are constituted by a transparent hole injection electrode and an electron injection electrode, and the surface of the electron injection electrode is uniformly formed on the surface of the electron injection electrode. The vapor deposition layer is formed by vapor deposition so as to be covered, and the electron transport layer is formed.

  In a further preferred embodiment of the present invention, the vapor deposition layer is formed by vapor deposition so that the film thickness distribution of the vapor deposition layer is ± 10% or less.

  In a preferred embodiment of the present invention, the substrate has a substantially rectangular shape, the deposition source is rotated in a plane including the substrate, and one vertex of the substrate is closest to the deposition source. When the deposition source is placed in a plane perpendicular to the plane including the substrate, the diagonal line connecting the vertex of the substrate and the vertex of the substrate opposite to the vertex, A center line is included, and the center line of the vapor deposition source is disposed so as to pass through the vicinity of the one vertex of the substrate, and the center line of the vapor deposition source and the plane including the substrate; The deposited layer is formed by vapor deposition while the substrate is rotated in a plane including the substrate while being arranged so that the angle formed by the above is 10 degrees to 45 degrees.

  According to the study of the present inventor, when the deposition source is rotated so that the substrate is rotated in a plane including the substrate, and the vertex of the substrate is positioned closest to the deposition source, Including a diagonal line connecting the apex of the substrate opposite to one apex, the center line of the deposition source is included in a plane perpendicular to the plane including the substrate, and the center line of the deposition source is at the apex of the substrate Arrange so that the center line of the vapor deposition source and the plane including the substrate are 10 degrees to 45 degrees, and arrange the substrate in the plane including the substrate, It has been found that in the case of forming a vapor deposition layer by vapor deposition while rotating, the vapor deposition layer can be formed by vapor deposition so that one surface of the two electrodes is uniformly covered. According to a preferred embodiment of the present invention, foreign matter is mixed, hole injection Even in the case where foreign matter exists on the electrode or the electron injection electrode, or due to the foreign matter, or regardless of the foreign matter, when the convex portion is formed on the hole injection electrode or the electron injection electrode, On the hole injection electrode or the electron injection electrode, it is possible to form an organic light emitting layer or a hole transport layer or an organic light emitting layer or an electron transport layer having a substantially uniform film thickness by vapor deposition. A hole injection electrode and an electron injection electrode can be formed apart from each other, so that when a voltage is applied to the organic EL display panel, a leak current is generated and a light emission failure is effectively prevented. It is possible to reliably prevent the organic EL element from being destroyed.

  In the present invention, the vapor deposition source is preferably arranged at a position spaced apart by 81 mm to 600 mm in the vertical direction from the plane including the substrate.

  In a further preferred embodiment of the present invention, the substrate is positioned on the opposite side of the vapor deposition source with respect to the substrate, and the substrate is rotated in a plane including the substrate, and one vertex of the substrate is A diagonal line connecting the one apex of the substrate and the apex of the substrate opposite to the one apex when positioned closest to the vapor deposition source, and the center line of the vapor deposition source, A second vapor deposition source is arranged so that the center line thereof is located in a plane perpendicular to the plane including the substrate, and the vapor deposition layer is formed by vapor deposition.

  According to the inventor's research, the substrate is positioned on the opposite side of the deposition source and rotated in a plane including the substrate, and one vertex of the substrate is closest to the deposition source. A center line of a deposition source including a diagonal line connecting a vertex of the substrate and a vertex of the substrate opposite to the vertex and a center line of the deposition source, and the center line in a plane perpendicular to the plane including the substrate. In the case where the second vapor deposition source is arranged such that the vapor deposition layer is formed by vapor deposition, the vapor deposition layer can be formed more uniformly on one surface of the two electrodes. Therefore, according to a further preferred embodiment of the present invention, even when foreign matter is mixed and foreign matter is present on the hole injection electrode or the electron injection electrode, and also due to the foreign matter, Alternatively, the hole injection electrode or Even when a convex portion is formed on the electron injection electrode, the organic light emitting layer or the hole transport layer or the organic light emitting layer or the electron transport layer having a uniform film thickness is formed by vapor deposition on the hole injection electrode or the electron injection electrode. Therefore, it is always possible to form the hole injection electrode and the electron injection electrode at a desired distance from each other. Therefore, when a voltage is applied to the organic EL display panel, a leakage current is generated. It is possible to effectively prevent the occurrence of light emission failure due to the occurrence of light emission, and to reliably prevent the organic EL element from being destroyed.

  The object of the present invention is also an organic EL display panel comprising a substantially rectangular substrate, two electrodes at least one of which is transparent, and an organic layer including at least one organic light emitting layer between the two electrodes. A rotation mechanism for rotating the substrate in a plane including the substrate, and a vapor deposition source, and the vapor deposition source is configured to be a plane including the substrate by the rotation mechanism. The diagonal line connecting the one vertex of the substrate and the vertex of the substrate opposite to the one vertex when the vertex of the substrate is positioned closest to the deposition source. And a center line of the deposition source is included in a plane perpendicular to the plane including the substrate, and the center line of the deposition source passes through the vicinity of the one vertex of the substrate. The vapor deposition source Said center line, the angle between the plane including the substrate is achieved by an organic EL display panel manufacturing apparatus characterized by being arranged so as to be 10 degrees to 45 degrees.

  According to the study of the present inventor, an organic EL display panel comprising a substantially rectangular substrate, two electrodes transparent at least one, and an organic layer including at least one organic light emitting layer between the two electrodes. A rotation mechanism for rotating a substrate in a plane including the substrate and a vapor deposition source, and the vapor deposition source rotates the substrate in a plane including the substrate by the rotation mechanism, In a plane perpendicular to the plane containing the substrate, including a diagonal line connecting one vertex of the substrate and the vertex of the substrate opposite to the one vertex when the vertex is positioned closest to the deposition source The angle between the center line of the vapor deposition source and the plane including the substrate is arranged so that the center line of the vapor deposition source is included and the center line of the vapor deposition source passes through the vicinity of one vertex of the substrate. Is arranged to be between 10 and 45 degrees In the case of forming a vapor deposition layer on one surface of two electrodes by vapor deposition using an EL display panel manufacturing apparatus, the vapor deposition layer is formed so that one surface of the two electrodes is uniformly covered. Therefore, according to the present invention, in the case where foreign matter is mixed and foreign matter is present on the hole injection electrode or the electron injection electrode, and also due to the foreign matter, Alternatively, an organic light emitting layer having a substantially uniform thickness by vapor deposition on the hole injection electrode or the electron injection electrode even when a convex portion is formed on the hole injection electrode or the electron injection electrode regardless of the foreign matter. Alternatively, a hole transport layer or an organic light emitting layer or an electron transport layer can be formed. Therefore, the hole injection electrode and the electron injection electrode are always formed at a desired distance. Therefore, when a voltage is applied to the organic EL display panel, it is possible to effectively prevent the occurrence of a light emission failure due to the occurrence of a leakage current, and the destruction of the organic EL element. It becomes possible to prevent reliably.

  In the present invention, the vapor deposition source is preferably arranged at a position spaced apart by 81 mm to 600 mm in the vertical direction from the plane including the substrate.

  In a preferred embodiment of the present invention, the organic EL display panel manufacturing apparatus is further disposed on the opposite side of the vapor deposition source with respect to the substrate, and the substrate is rotated in a plane including the substrate. A diagonal line connecting the one vertex of the substrate and the vertex of the substrate opposite to the one vertex when the one vertex of the substrate is positioned closest to the deposition source, and the deposition source The second vapor deposition source is disposed so that the center line is located in a plane perpendicular to the plane including the substrate and including the substrate.

  According to a study by the inventor, the substrate is further disposed on the opposite side of the deposition source with respect to the substrate, and the substrate is rotated in a plane including the substrate, and one vertex of the substrate is closest to the deposition source. A center line of a deposition source including a diagonal line connecting a vertex of the substrate and a vertex of the substrate opposite to the vertex and a center line of the deposition source, and the center line in a plane perpendicular to the plane including the substrate. In the case where a vapor deposition layer is formed by vapor deposition on one surface of two electrodes using an apparatus for manufacturing an organic EL display panel having a second vapor deposition source arranged so that It has been found that a vapor deposition layer can be formed more uniformly on one surface of one electrode, and therefore, according to a preferred embodiment of the present invention, foreign matter is mixed into the hole injection electrode or the electron. When there is foreign matter on the injection electrode Also, due to the foreign matter or regardless of the foreign matter, even when the convex portion is formed on the hole injection electrode or the electron injection electrode, by vapor deposition on the hole injection electrode or the electron injection electrode, An organic light emitting layer or a hole transport layer or an organic light emitting layer or an electron transport layer having a uniform film thickness can be formed. Therefore, the hole injection electrode and the electron injection electrode are always formed at a desired distance. Therefore, when a voltage is applied to the organic EL display panel, it is possible to effectively prevent the occurrence of a light emission failure due to the occurrence of a leakage current, and the organic EL element is surely destroyed. It becomes possible to prevent.

  ADVANTAGE OF THE INVENTION According to this invention, generation | occurrence | production of leak current can be prevented effectively, and it becomes possible to provide the manufacturing method of the organic electroluminescent display panel which can prevent the light emitting defect and destruction of an organic electroluminescent element reliably. Become.

  In addition, according to the present invention, it is possible to provide an organic EL display panel manufacturing apparatus that can effectively prevent the occurrence of leakage current and can reliably prevent light emission defects and destruction of organic EL elements. It becomes possible.

  The organic EL display panel manufactured in the present invention includes a substrate functioning as a support substrate, two electrodes at least one of which is transparent, and an organic layer including at least one organic light emitting layer between the two electrodes. It has as a basic configuration.

  In the present invention, when the organic EL display panel is configured such that light is extracted through a substrate that functions as a support substrate, the substrate needs to be transparent, while the organic EL display If the panel is configured to extract light from the opposite side of the substrate, the substrate may be opaque.

  In the present invention, the material for forming the substrate is not particularly limited as long as it has insulating properties, and can be appropriately selected depending on the material of the laminated electrodes.

  Examples of a material that can be preferably used for forming a transparent substrate include glass, and among these glasses, alkali-free glass is particularly preferably used.

  In the present invention, when the organic EL display panel is configured to extract light through the substrate, a red color filter, a blue color filter, and a green color filter are formed on the transparent substrate. In order to form a red color filter, a blue color filter, and a green color filter, a pigment and / or an organic dye can be used. As the pigment, any of an inorganic pigment and an organic pigment can be used. As the inorganic pigment, for example, a metal complex oxide or the like can be used, and a mixture of an inorganic pigment and an organic pigment can also be used.

  Among pigments and organic dyes, organic pigments and organic dyes are preferably used because of their large color variations. Among organic pigments and organic dyes, organic pigments are heat resistant and do not dissolve in organic solvents or water. Therefore, it is particularly preferable.

  In the present invention, known materials can be used as organic pigments and organic dyes. Examples of organic pigments and organic dyes for red include diketopyrrolopyrrole, anthraquinone, quinacridone, perylene, Examples include azo-based and benzimidazolone-based organic pigments and organic dyes for green, and halogenated copper phthalocyanine-based and anthraquinone-based organic pigments and organic dyes for blue include copper-phthalocyanine. System, indanthron system and the like. Examples of yellow organic pigments and organic dyes for color mixing include isoindoline series, isoindolinone series, quinophthalone series, and disazo series.

  Among these organic pigments and organic dyes, azo organic pigments or organic dyes are preferably used to form red color filters, and copper phthalocyanine organic pigments are used to form blue color filters. Or an organic dye is preferably used. The green color filter is preferably formed by mixing a copper phthalocyanine organic pigment or organic dye with a disazo organic pigment or organic dye.

  In the present invention, the red color filter has a light transmission characteristic for transmitting light with a wavelength of 573 to 780 nm, and preferably has a light transmission characteristic for transmitting light with a wavelength of 578 to 620 nm. The green color filter has a light transmission characteristic that transmits light having a wavelength of 493 to 573 nm, and preferably has a light transmission characteristic that transmits light having a wavelength of 520 to 570 nm. On the other hand, the blue color filter has a light transmission characteristic for transmitting light with a wavelength of 380 to 493 nm, and preferably has a light transmission characteristic for transmitting light with a wavelength of 430 to 470 nm.

  In the present invention, when a red color filter, a blue color filter, and a green color filter are formed on a transparent substrate, the red color filter, the blue color filter, and the green color filter are respectively formed by photolithography for each pixel. According to the process, the organic EL display panel pixels are formed on the surface of the transparent substrate so as to be substantially parallel to each other in rows, and each pixel of the organic EL display panel has one red color filter, one blue color filter, and one green color. A color filter is provided.

  In the present invention, the thicker the red color filter, the blue color filter, and the green color filter, the more the chromaticity is improved. When the red color filter, the blue color filter, and the green color filter are too thin, the functions as the red color filter, the blue color filter, and the green color filter are deteriorated. If the amount is too large, pigment crystals precipitate or cracks occur in the red color filter, the blue color filter, and the green color filter. Therefore, the thickness is generally preferably 1.5 μm or less. Specifically, preferable thicknesses of the red color filter, the blue color filter, and the green color filter are different depending on colors, and the red color filter preferably has a thickness of 400 to 15000 angstroms. Preferably has a thickness of 1200 to 12000 angstroms, and the blue color filter preferably has a thickness of 400 to 15000 angstroms. The thicknesses of the red color filter, the green color filter, and the blue color filter can be changed according to required optical characteristics.

  In the present invention, when a red color filter, a blue color filter and a green color filter are formed on a transparent substrate, a passivation layer is preferably formed on the surface of the red color filter, the blue color filter and the green color filter. Is done. By forming a passivation layer on the surface of the red color filter, blue color filter, and green color filter, the red color filter, blue color filter, and green color are etched and washed when patterning the transparent electrode. It is possible to protect the red color filter, the blue color filter, and the green color filter by preventing the color filter from being damaged.

  In the present invention, the organic EL display panel is provided with a transparent substrate facing the substrate functioning as the support substrate on the side opposite to the substrate functioning as the support substrate, and the transparent substrate facing the substrate functioning as the support substrate is provided. When a red color filter, a blue color filter, and a green color filter are formed on a transparent substrate that is configured so that light is extracted through the substrate and is opposed to the substrate, it is preferably transparent that is opposed to the substrate. A passivation layer is formed on the surface of the red color filter, blue color filter, and green color filter formed on a transparent substrate.

  In the present invention, the passivation layer can be formed of a silicon compound such as silicon oxide (SiOx), silicon nitride (SiNy), or silicon oxynitride (SiOxNy), but is formed of a composite film of silicon oxide and silicon nitride. You can also.

  In the present invention, the passivation layer is preferably formed of a silicon compound such as silicon oxide, silicon nitride, or silicon oxynitride, but any material that does not adversely affect the red color filter, blue color filter, and green color filter. Alternatively, the passivation layer can be formed of an organic transparent resin or an inorganic transparent resin.

  In the present invention, when the passivation layer formed by silicon oxide, silicon nitride, silicon oxynitride, or a composite film of silicon oxide and silicon nitride may contain defects such as pinholes or foreign matter In order to protect the passivation layer formed by silicon oxide, silicon nitride, silicon oxynitride or a composite film of silicon oxide and silicon nitride, an organic transparent resin or an inorganic transparent resin is used on the passivation layer. A protective film can also be formed.

  The passivation layer preferably has a refractive index at 632 nm of 1.40 to 1.55, and more preferably has a refractive index at 632 nm of 1.44 to 1.48. When the refractive index at 632 nm of the passivation layer is higher than this, the function of protecting the red color filter, the blue color filter and the green color filter from the components in the organic light emitting layer is deteriorated. Therefore, the function of protecting the red color filter, the blue color filter, and the green color filter is deteriorated.

  When the passivation layer is formed of silicon oxide (SiOx), x is preferably 1.8 to 2.2, and more preferably 1.90 to 2.05. The value of x may be within this range as the average value of the passivation layer, and the value of x may change at a constant rate in the thickness direction of the passivation layer.

  When the passivation layer is formed of silicon nitride (SiNy), y is preferably 0.1 to 0.5. The value of y may be within this range as the average value of the passivation layer, and the value of y may change at a constant rate in the thickness direction of the passivation layer.

  When the passivation layer is formed of silicon oxynitride (SiOxNy), x is preferably 0.80 to 1.97 and y is preferably 0.02 to 0.80. The values of x and y may be within this range as the average value of the passivation layer, and the values of x and y may change at a constant rate in the thickness direction of the passivation layer.

  The passivation layer may contain 0.5 wt% or less of C, Ar, etc. as impurities, and may further contain 30 atomic% or less of H in order to relieve stress in the layer.

  In the present invention, the passivation layer preferably has an average surface roughness (Ra) of 2 to 50 nm, and preferably has a maximum surface roughness (Rmax) of 10 to 50 nm.

  Moreover, it is preferable that the passivation layer has the transmittance | permeability which permeate | transmits 80% or more of the light emitted from the organic light layer.

  The thickness of the passivation layer is not particularly limited, but is preferably 5 to 50 nm, particularly 10 to 30 nm.

  The passivation layer can be formed by a sputtering method, a plasma CVD method, or the like.

  In the case where the passivation layer is formed by sputtering, it is preferable to form the passivation layer by high-frequency sputtering using an RF power source. The power of RF sputtering using an RF power source is preferably in the range of 10 to 100 W / square centimeter, the frequency is 13.56 MHz, the deposition rate is 5 to 50 nm / min, and the pressure during deposition is 0.1 to 1.0 Pascal. It is preferable that

  When the passivation layer is formed by sputtering, an inert gas used in a normal sputtering apparatus can be used as the sputtering gas, but it is selected from the group consisting of Ar, Kr, and Xe. It is preferable to use one kind of inert gas or two or more kinds of mixed inert gases. When any one of Ar, Kr, and Xe is used as the main sputtering gas, the distance between the substrate and the target is preferably in the range of 20 to 60 Pascal · cm, particularly 30 to 50 Pascal · cm. It is preferable to be in the range. Of Ar, Kr and Xe, it is most preferable to use Ar.

  In the present invention, when an organic EL display panel is configured to extract light through a substrate and a transparent substrate is used, an organic light emitting device is used instead of a red color filter, a blue color filter, and a green color filter. A fluorescence conversion layer that converts light emitted from the layer into light having a predetermined wavelength may be provided.

  The fluorescence conversion layer includes a fluorescent material that is excited by light incident from the organic light emitting layer, and generates and emits light having a wavelength different from that of the incident light. A fluorescent substance is a substance that emits light of a wavelength determined by its energy order, and as the fluorescent substance contained in the fluorescence conversion layer, there is a compound that emits fluorescence corresponding to the three primary colors of light such as red, green, and blue. Preferably used. Since the fluorescent material can convert short-wavelength light into long-wavelength light, light of any color (wavelength) is generated by converting blue emission light into red, green, and yellow light. be able to.

  Examples of fluorescent substances that can be preferably used in the fluorescence conversion layer in the present invention include, for example, quinacridone, rubrene, styryl dyes and the like disclosed in JP-A 63-264692, and coumarins, lumogens, Mention may be made of at least one compound selected from compounds. In addition, metal complexes having 8-quinolinol or a derivative thereof such as tris (8-quinolinato) aluminum (Alq3) having the following structure as a ligand, tetraphenylbutadiene, anthracene, perylene, coronene, 12-phthaloperinone derivatives, etc. These fluorescent materials can also be preferably used in the fluorescence conversion layer. Furthermore, phenylanthracene derivatives disclosed in JP-A-8-12600, tetraarylethene derivatives disclosed in JP-A-8-12969, and the like can also be used as fluorescent substances for the fluorescence conversion layer.

  In the present invention, when the fluorescence conversion layer is provided, the thickness of the fluorescence conversion layer is preferably 2000 nm or less, particularly preferably about 300 nm to 600 nm.

  In the present invention, when the fluorescence conversion layer is provided, the fluorescence conversion layer is preferably formed by vapor-depositing a fluorescent material.

  In the present invention, the fluorescence conversion layer may be formed by vapor-depositing two or more kinds of fluorescent substances.

  In the present invention, when two or more kinds of fluorescent substances are vapor-deposited to form a fluorescence conversion layer, the temperature of each boat containing the fluorescent substances is individually controlled to co-evaporate two or more kinds of fluorescent substances. It is preferable to form a fluorescence conversion layer. When two or more kinds of fluorescent materials are co-evaporated, the vapor deposition can be performed at the same time, so that the working time can be shortened as compared with the case where two or more deposited films are laminated. Even if the vapor pressure of each fluorescent material is greatly different from the case of mixing and vapor-depositing two or more types of fluorescent materials, a fluorescence conversion layer containing two or more types of fluorescent materials is formed as desired. It becomes possible.

  In the present invention, when forming a fluorescence conversion layer using two or more kinds of fluorescent materials, two or more kinds of fluorescent materials are vapor-deposited, and two or more vapor-deposited layers are laminated to form a fluorescent layer. A conversion layer can be formed. When two or more kinds of fluorescent substances are co-evaporated to form a fluorescence conversion layer, it is indispensable to accurately control the amount of each added, and the operation is complicated. When two or more vapor-deposited layers formed by vapor deposition are laminated to form a fluorescence conversion layer, a fluorescence conversion layer having desired wavelength conversion characteristics can be easily formed. In addition, it is possible to form a fluorescence conversion layer having desired wavelength conversion characteristics even if the vapor pressures of the respective fluorescent materials are greatly different.

  In the present invention, when two or more vapor-deposited layers are formed by laminating two or more vapor-deposited layers to form a fluorescence conversion layer, each vapor-deposited layer is divided into two or more types of fluorescent substances. Can be formed by co-evaporation.

In the present invention, the conditions for depositing the fluorescent material are not particularly limited, but it is preferably 1 × 10 ⁻⁴ Pascal or less and the deposition rate is about 0.01 to 1 nm / second.

  In the present invention, when a fluorescence conversion layer is provided instead of the red color filter, blue color filter, and green color filter, the passivation layer is formed on the surface of the fluorescence conversion layer.

  In the present invention, the organic EL display panel is configured to extract light through a substrate functioning as a support substrate, and when a transparent substrate is used, the transparent substrate, the red color filter, the blue color filter, and A transparent electrode that functions as a hole injection electrode is formed on the green color filter, the fluorescence conversion layer, or the passivation layer.

  On the other hand, when the organic EL display panel is configured to extract light from the opposite side of the substrate, the electron injection electrode is formed on the substrate that functions as a support substrate.

  In the present invention, an organic layer having at least one organic light emitting layer is formed on a transparent electrode or an electron injection electrode functioning as a hole injection electrode.

  The organic light emitting layer contains at least one or two kinds of organic compounds involved in the light emitting function.

  In the present invention, when a red color filter, a blue color filter, and a green color filter are formed on a transparent substrate, the wavelength of light emitted from at least one organic light emitting layer may be the wavelength of white light. Although not particularly limited, at least one organic light emitting layer is preferably configured to emit white light having a continuous emission spectrum of at least 380 to 780 nm.

  In the present invention, when forming a red color filter, a blue color filter, and a green color filter on a transparent substrate, at least one organic light emitting layer emits white light having a continuous emission spectrum of 430 nm to 650 nm or less. It is particularly preferable if it is configured to emit.

  In the present invention, when a fluorescence conversion layer is formed on a transparent substrate, the wavelength of light emitted from at least one organic light emitting layer may be the wavelength of blue light, and is not particularly limited. However, preferably, at least one organic light emitting layer is configured to emit blue light having a continuous emission spectrum of 380 to 493 nm.

  In the present invention, when the fluorescence conversion layer is formed on the transparent substrate, at least one organic light emitting layer is configured to emit blue light having a continuous emission spectrum of 430 to 470 nm. Particularly preferred.

  In the present invention, at least one organic light-emitting layer contains a host material that is a hole transporting compound, an electron transporting compound, or a mixture thereof, and has a hole and electron injection function, a hole and electron transport function, and It preferably has a function of generating excitons by recombination of holes and electrons, and contains a relatively electronically neutral compound.

  The hole transporting compound used as a host material for at least one organic light emitting layer includes triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino acids. Examples thereof include substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, and stilbene derivatives, and triphenyldiamine derivatives can be preferably used.

  As an example of the triphenyldiamine derivative, a tetraarylbenzidine compound (triaryldiamine or triphenyldiamine: TPD) is particularly preferable.

  Preferred specific examples of the tetraarylbenzidine compound (TDP) are as follows.

  As an electron transporting compound used as a host material of at least one organic light emitting layer, a quinoline derivative can be preferably used, and further, a metal complex having 8-quinolinol or a derivative thereof as a ligand, Tris (8-quinolinato) aluminum (Alq3) having the structure of the formula is preferably used. In addition, phenylanthracene derivatives and tetraarylethene derivatives can also be used as the electron transporting compound.

  In the present invention, it is preferable that at least one organic light emitting layer has a structure in which a host material which is a hole transport compound, an electron transport compound or a mixture thereof is doped with a dopant which is a fluorescent material.

  In addition, the organic EL display panel may include two organic light emitting layers stacked on each other. When forming a two-layer organic light-emitting layer, each of them is doped with a fluorescent material having a different light emission wavelength, thereby ensuring a wide light emission wavelength band and improving the degree of freedom of the color of the light emission color. be able to.

  In the present invention, the fluorescent substance to be contained as a dopant is, for example, a compound disclosed in JP-A 63-264692, specifically, a rubrene compound, a coumarin compound, a quinacridone compound, a dicyanomethylpyran compound. One or more compounds selected from the group consisting of compounds such as compounds can be preferably used.

  Examples of fluorescent substances that can be preferably used in the present invention are as follows.

  Furthermore, in the present invention, the naphthacene compounds described in JP-A-2000-26334 and JP-A-2000-26337 can also be preferably used as the fluorescent substance to be contained as a dopant. In combination with a coumarin compound, a quinacridone compound, a dicyanomethylpyran compound, etc., the lifetime of the organic EL display panel can be dramatically improved.

  In the present invention, a naphthacene compound that can be preferably used as a fluorescent substance to be contained as a dopant has a basic skeleton represented by the formula (I).

In the formula (I), R ¹ to R ⁴ each represents an unsubstituted or substituted alkyl group, aryl group, amino group, heterocyclic group or alkenyl group, and the aryl group, amino group, heterocyclic group It is preferably either a cyclic group or an alkenyl group.

The aryl group represented by R ¹ to R ⁴ may be monocyclic or polycyclic, and includes a condensed ring or a ring assembly. The total number of carbon atoms is preferably 6 to 30, and may have a substituent.

Examples of the aryl group represented by R ¹ to R ⁴ include a phenyl group, (o-, m-, p-) tolyl group, pyrenyl group, perylenyl group, coronenyl group, (1- and 2-) naphthyl group, anthryl. Group, (o-, m-, p-) biphenylyl group, terphenyl group, phenanthryl group and the like are preferable.

The amino group represented by R ¹ to R ⁴ may be any of an alkylamino group, an arylamino group, an aralkylamino group, and the like. These preferably have an aliphatic group having 1 to 6 carbon atoms in total and / or a non-one tetracyclic aromatic carbocyclic ring. Specific examples include a dimethylamino group, a diethylamino group, a dibutylamino group, a diphenylamino group, a ditolylamino group, a bisdiphenylamino group, and a bisnaphthylamino group.

Examples of the heterocyclic group represented by R ¹ to R ⁴ include a 5-membered or 6-membered aromatic heterocyclic group containing O, N, and S as a hetero atom, and a condensed polycyclic aromatic group having 2 to 20 carbon atoms. Group heterocyclic group and the like.

Examples of the alkenyl group represented by R ¹ to R ⁴ include (1- and 2-) phenylalkenyl groups having at least one phenyl group, (1,2- and 2,2-) diphenylalkenyl groups, A (1,2,2-) triphenylalkenyl group and the like are preferable, but may be unsubstituted.

  Examples of the aromatic heterocyclic group and the condensed polycyclic aromatic heterocyclic group include thienyl group, furyl group, pyrrolyl group, pyridine group, quinolyl group, and quinoxalyl.

When R ¹ to R ⁴ have a substituent, at least two of these substituents are preferably any of an aryl group, an amino group, a heterocyclic group, an alkenyl group, and an aryloxy group. As for the aryl group, amino group, heterocyclic group and alkenyl group, those similar to R ¹ to R ⁴ can be used.

As the aryloxy group serving as a substituent for R ¹ to R ⁴ , those having an aryl group having 6 to 18 carbon atoms are preferable, and specific examples include (o-, m-, p-) phenoxy groups. It is done.

  Two or more of these substituents may form a condensed ring or may be further substituted. When substituted, preferred substituents are the same as those described above.

When R ¹ to R ⁴ have a substituent, at least two of them preferably have the substituent. The substitution position is not particularly limited, and may be any of meta, para, and ortho positions. R ¹ and R ⁴ , and R ² and R ³ are preferably the same, but may be different from each other.

In the formula (I), at least 5 or more, preferably 6 or more of R ¹ to R ⁸ are an unsubstituted or substituted alkyl group, aryl group, amino group, alkenyl group or heterocyclic group. .

The alkyl group represented by R ⁵ , R ⁶ , R ⁷ and R ⁸ is preferably an alkyl group having 1 to 6 carbon atoms, but may be linear or branched. Preferable specific examples of the alkyl group represented by R ⁵ , R ⁶ , R ⁷ and R ⁸ include a methyl group, an ethyl group, a (n, i) propyl group, a (n, i, sec, tert) -butyl group, (N, i, neo, tert) -pentyl group and the like can be mentioned.

As the aryl group, amino group and alkenyl group represented by R ⁵ , R ⁶ , R ⁷ and R ⁸ , those similar to R ¹ to R ⁴ can be used. R ⁵ and R ⁶ and R ⁷ and R ⁸ are preferably the same, but may be different from each other.

  In the present invention, examples of compounds that can be preferably used as the fluorescent substance to be contained as a dopant include the following.

  When two organic light emitting layers are provided, it is preferable that each organic light emitting layer includes two or more kinds of these fluorescent substances, and the two or more kinds of fluorescent substances have different emission wavelengths.

  In the present invention, the content of the dopant in the organic light emitting layer is preferably 0.01 to 20% by weight, and more preferably 0.1 to 15% by weight.

  In the present invention, the thickness of the organic light emitting layer is not particularly limited, and the preferred thickness is usually 5 to 500 nm, more preferably 10 to 300 nm, although it varies depending on the forming method.

  In the present invention, when forming two or more organic light emitting layers, the thickness of each organic light emitting layer is in a range from the thickness corresponding to one molecular layer to less than the total thickness of the organic light emitting layer. Specifically, it is 1 to 85 nm, preferably 5 to 60 nm, more preferably 5 to 50 nm.

  In the present invention, the organic light emitting layer is formed by vapor deposition.

  In the present invention, the organic light emitting layer is formed by vapor deposition so that the surface of the hole injection electrode or electron injection electrode is uniformly covered on the surface of the transparent hole injection electrode or electron injection electrode. Is formed by.

  In the present invention, when the deposition source is rotated so that the substantially rectangular substrate is rotated in a plane including the substrate, and the top of the substrate is positioned so as to be closest to the deposition source, The center line of the deposition source is included in a plane perpendicular to the plane including the substrate, and includes a diagonal line connecting the vertex of the substrate facing one vertex, and the center line of the deposition source is in the vicinity of one vertex of the substrate. Is arranged so that the angle between the center line of the deposition source and the plane including the substrate is 10 degrees to 45 degrees, and the substrate is rotated within the plane including the substrate. It is preferable to form an organic light emitting layer by forming a vapor deposition layer by vapor deposition.

  In the present invention, more preferably, the substrate is located on the opposite side of the deposition source with respect to the substrate, and the substrate is rotated in a plane including the substrate, and one vertex of the substrate is closest to the deposition source. The center line of the deposition source includes a diagonal line connecting one apex of the substrate and the apex of the substrate facing the one apex, and the center line of the evaporation source, and the center line is in a plane perpendicular to the plane including the substrate. A second vapor deposition source is disposed so as to be positioned, and a vapor deposition layer is formed by vapor deposition, whereby an organic light emitting layer is formed.

In the present invention, the conditions for forming the organic light emitting layer by vapor deposition are not particularly limited, but it is preferably 1 × 10 ⁻⁴ Pascal or less and the vapor deposition rate is about 0.01 to 1 nm / second. .

  In the present invention, preferably, at least one organic light emitting layer contains a mixture of a hole transporting compound and an electron injection / transporting compound.

  When at least one organic light emitting layer contains a mixture of a hole transporting compound and an electron injecting and transporting compound, a carrier hopping conduction path is formed, so that each carrier passes through a polar dominant substance. The carrier of the opposite polarity is less likely to be injected, and therefore, the compound contained in the organic light emitting layer is prevented from being damaged, so that the lifetime of the organic EL display panel can be improved. is there.

  Furthermore, by including a dopant made of a fluorescent material in an organic light emitting layer containing a mixture of a hole transporting compound and an electron injecting and transporting compound, the light emission wavelength characteristic of the organic light emitting layer itself can be changed, and the light emission wavelength. Can be shifted to the longer wavelength side, the emission intensity can be improved, and the stability of the organic EL display panel can be improved.

  When at least one organic light-emitting layer contains a mixture of a hole transporting compound and an electron injecting / transporting compound, the mixing ratio of the hole transporting compound and the electron injecting / transporting compound depends on the carrier mobility and the carrier concentration. Therefore, it is generally determined, but generally in a weight ratio of 1/99 to 99/1, preferably 10/90 to 90/10, more preferably 20/80 to 80/20, most preferably 40/60 to 60/40 is selected.

  When forming an organic light emitting layer containing a mixture of a hole transporting compound and an electron injecting / transporting compound, the hole transporting compound and the electron injecting / transporting compound are placed in different evaporation sources, evaporated and co-deposited. However, when the vapor pressures of the hole transporting compound and the electron injection / transporting compound are approximately the same or very close to each other, they can be mixed in advance in the same vapor deposition source for vapor deposition.

  When forming an organic light emitting layer containing a mixture of a hole transporting compound and an electron injecting and transporting compound, the hole transporting compound and the electron injecting and transporting compound must be uniformly mixed in the organic light emitting layer. Although preferred, it is not always necessary to mix uniformly.

  In the present invention, preferably, in addition to at least one organic light emitting layer, hole transport having a function of facilitating the injection of holes from the hole injection electrode, a function of stably transporting holes, and a function of hindering transport of electrons. The layer and the electron transport layer having the function of facilitating the injection of electrons from the electron injection electrode, the function of stably transporting electrons, and the function of preventing the transport of holes are formed. By forming these layers, it is possible to increase the number of holes and electrons injected into the organic light emitting layer, confine them in the organic light emitting layer, optimize the recombination region, and improve the light emission efficiency. .

  In the present invention, when forming a hole transport layer and an electron transport layer in addition to at least one organic light emitting layer, the hole transport layer and the electron transport layer are formed by vapor deposition, and a transparent hole injection electrode or electron injection electrode is formed. The hole transport layer and the electron transport layer are formed by forming a vapor deposition layer by vapor deposition so that the surface of the hole injection electrode or the electron injection electrode is uniformly covered.

  In the present invention, when the deposition source is rotated so that the substantially rectangular substrate is rotated in a plane including the substrate, and the top of the substrate is positioned so as to be closest to the deposition source, The center line of the deposition source is included in a plane perpendicular to the plane including the substrate, and includes a diagonal line connecting the vertex of the substrate facing one vertex, and the center line of the deposition source is in the vicinity of one vertex of the substrate. Is arranged so that the angle between the center line of the deposition source and the plane including the substrate is 10 degrees to 45 degrees, and the substrate is rotated within the plane including the substrate. However, it is preferable to form a vapor deposition layer by vapor deposition and to form a hole transport layer and an electron transport layer, respectively.

  In the present invention, more preferably, the substrate is located on the opposite side of the deposition source with respect to the substrate, and the substrate is rotated in a plane including the substrate, and one vertex of the substrate is closest to the deposition source. The center line of the deposition source includes a diagonal line connecting one apex of the substrate and the apex of the substrate facing the one apex, and the center line of the evaporation source, and the center line is in a plane perpendicular to the plane including the substrate. A second vapor deposition source is arranged so as to be positioned, and a vapor deposition layer is formed by vapor deposition, and a hole transport layer and an electron transport layer are formed, respectively.

  In the present invention, it is more preferable to facilitate injection of holes from the hole injection electrode between the hole injection electrode and the hole transport layer in addition to at least one organic light emitting layer, hole transport layer and electron transport layer. A hole injection layer having a function is formed, and an electron injection layer having a function of facilitating injection of electrons from the electron injection electrode is formed between the electron injection electrode and the electron transport layer.

  In the present invention, when forming a hole injection layer and an electron injection layer in addition to at least one organic light emitting layer, a hole transport layer and an electron transport layer, the hole injection layer and the electron injection layer are formed by vapor deposition and transparent. The hole injection layer and the electron injection layer are formed by forming a vapor deposition layer by vapor deposition so that the surface of the hole injection electrode or the electron injection electrode is uniformly covered on the surface of the hole injection electrode or the electron injection electrode Is done.

  In the present invention, when the deposition source is rotated so that the substantially rectangular substrate is rotated in a plane including the substrate, and the top of the substrate is positioned so as to be closest to the deposition source, The center line of the deposition source is included in a plane perpendicular to the plane including the substrate, and includes a diagonal line connecting the vertex of the substrate facing one vertex, and the center line of the deposition source is in the vicinity of one vertex of the substrate. Is arranged so that the angle between the center line of the deposition source and the plane including the substrate is 10 degrees to 45 degrees, and the substrate is rotated within the plane including the substrate. However, it is preferable to form a vapor deposition layer by vapor deposition and to form a hole injection layer and an electron injection layer, respectively.

  In the present invention, more preferably, the substrate is located on the opposite side of the deposition source with respect to the substrate, and the substrate is rotated in a plane including the substrate, and one vertex of the substrate is closest to the deposition source. The center line of the deposition source includes a diagonal line connecting one apex of the substrate and the apex of the substrate facing the one apex, and the center line of the evaporation source, and the center line is in a plane perpendicular to the plane including the substrate. A second vapor deposition source is disposed so as to be positioned, and a vapor deposition layer is formed by vapor deposition, and a hole injection layer and an electron injection layer are formed, respectively.

In the present invention, conditions for forming the organic light emitting layer, the hole transport layer and the hole injection layer, and the electron transport layer and the electron injection layer by vapor deposition are not particularly limited, but are 1 × 10 ⁻⁴ Pascals. In the following, the deposition rate is preferably about 0.01 to 1 nm / second. Each layer is preferably formed continuously under reduced pressure of 1 × 10 ⁻⁴ Pascal or less. By continuously forming each layer under a reduced pressure of 1 × 10 ⁻⁴ Pascal or less, it is possible to prevent impurities from being adsorbed at the interface between the layers, and thus a high-performance organic EL display panel is obtained. In addition, the driving voltage of the organic EL display panel can be reduced, and the generation and growth of dark spots can be suppressed.

  In the present invention, examples of a compound that can be preferably used for the hole transport layer or the hole transport layer and the hole injection layer include, for example, tetraarylbenzidine compounds (triaryldiamine or triphenyldiamine: TPD), aromatic tertiary compounds. Examples thereof include amines, hydrazone derivatives, carbazole derivatives, triazole derivatives, imidazole derivatives, oxadiazole derivatives having an amino group, and polythiophene. Of these, tetraarylbenzidine compounds (triaryldiamine or triphenyldiamine: TPD) and triarylamine multimers (ATP) described in WO / 98/30071 can be particularly preferably used.

  Preferred specific examples of the triarylamine multimer (ATP) are as follows.

  In the present invention, further, JP-A-63-295695, JP-A-2-191694, JP-A-3-792, JP-A-5-234681, JP-A-5-239455, JP-A-5-239455 are disclosed. Various organic compounds described in JP-A-5-299174, JP-A-7-126225, JP-A-7-126226, JP-A-8-1000922, EP0650955A1, and the like can also be used. It can be used for hole injection layers.

  In the present invention, two or more of these compounds may be used in combination, and when two or more of these compounds are used in combination, they may be mixed in one layer or laminated as two or more layers. May be.

  In the case of providing a hole transport layer and a hole injection layer, a preferable combination is selected from the above compounds, and from a transparent electrode side such as ITO functioning as a hole injection electrode, in order of a compound layer having a small ionization potential, It is preferable to laminate. Moreover, it is preferable to form a compound layer having a good thin film property on the surface of the transparent electrode functioning as a hole injection electrode. In particular, it is preferable to use the ATP for the hole injection layer and the TPD for the hole transport layer. By using the ATP for the hole injection layer and the TPD for the hole transport layer, the driving voltage is reduced, and current leakage and dark spot generation and growth can be prevented.

  In the present invention, when the hole transport layer and the hole injection layer are formed by vapor deposition, a uniform and pinhole-free thin film of about 1 to 10 nm can be formed, so that the ionization potential is small in the hole injection layer. Even when a compound that absorbs light having a visible wavelength is used, it is possible to prevent a decrease in luminous efficiency due to a change in color tone or reabsorption of the emitted color.

In the present invention, examples of a compound that can be preferably used in the electron transport layer or the electron transport layer and the electron injection layer include 8-quinolinol or a derivative thereof such as tris (8-quinolinolato) aluminum (Alq ₃ ). Examples of the ligand include organometallic complexes, oxadiazole derivatives, perylene derivatives, pyridine derivatives, pyrimidine derivatives, and quinoxaline derivatives.

  In the present invention, when two or more compounds are contained in the organic light emitting layer, the hole transport layer, the hole injection layer, the electron transport layer or the electron injection layer, the temperature of each boat containing the compounds is controlled individually. The organic light emitting layer, hole transport layer, hole injection layer, electron transport layer or electron injection layer is preferably formed by co-evaporation.

  In the present invention, the hole injection electrode is preferably formed of a material capable of efficiently injecting holes into the hole transport layer or the hole injection layer, and is made of a material having a work function of 4.5 to 5.5 eV. Is preferably formed.

Examples of materials that can be preferably used to form the hole injection electrode include tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), indium oxide (In ₂ O ₃ ), tin oxide (SnO ₂ ) and An oxide containing zinc oxide (ZnO) as a main component can be given. These oxides may have a composition slightly deviated from the stoichiometric composition. The mixing ratio of tin oxide to indium oxide in tin-doped indium oxide (ITO) is preferably 1 to 20% by weight, more preferably 5 to 12% by weight. The mixing ratio of zinc oxide to indium oxide in zinc-doped indium oxide (IZO) is usually 12 to 32% by weight.

In the present invention, the hole injection electrode may contain silicon oxide (SiO ₂ ) in order to adjust the work function. The content of silicon oxide (SiO ₂ ) is preferably 0.5 to 10% in terms of a molar ratio with respect to tin-doped indium oxide (ITO). By containing silicon oxide, tin-doped indium oxide (ITO) can be increased.

  In the present invention, the hole injecting electrode may be provided with a high resistance inorganic hole injecting and transporting layer having a hole conduction path and a function of blocking electrons.

  Thus, by providing a high resistance inorganic hole injecting and transporting layer having a hole conduction path and a function of blocking electrons, holes can be efficiently injected into the organic light emitting layer, and the light emission efficiency is improved. And the drive voltage can be reduced. Furthermore, by providing a high resistance inorganic hole injecting and transporting layer having a hole conduction path and a function of blocking electrons, the thickness of the organic EL display panel can be reduced, and the organic EL display panel can be made thin. It becomes possible to stratify.

  In the present invention, a metal or semi-metal oxide such as silicon or germanium is used as the main component of the inorganic hole injecting and transporting layer, and the work function is 4.5 eV or more, preferably 4.5 to 6.0 eV. When a hole conduction path is formed by containing any one or more of these metals, metalloids and oxides, carbides, nitrides, silicides, and borides of these, holes are transferred from the hole injection electrode to the organic light emitting layer. Can be efficiently injected, and the movement of electrons from the organic light emitting layer to the hole injection electrode can be suppressed, so that holes and electrons can be efficiently recombined in the organic light emitting layer.

  When providing a high resistance inorganic hole injecting and transporting layer, a brightness equal to or higher than that of a conventional organic hole transporting layer or an organic EL display panel having an organic hole injecting layer can be obtained. In addition, since the heat resistance and the weather resistance are high, the lifetime is long, and the connection with the hole injection electrode, which is an inorganic material, is improved. Therefore, there are advantages in that the occurrence of leaks and dark spots is small. Furthermore, unlike a relatively expensive organic material, an inorganic material for forming an inorganic hole injecting and transporting layer is inexpensive, readily available, and easy to form an inorganic hole injecting and transporting layer. The manufacturing cost of the display panel can be reduced.

The resistivity of the high resistance inorganic hole injecting and transporting layer is preferably 1 Ω · cm to 1 × 10 ¹¹ Ω · cm, and preferably 1 × 10 ³ Ω · cm to 1 × 10 ⁸ Ω · cm. Particularly preferred. By setting the resistivity of the inorganic hole injecting and transporting layer within such a range, it is possible to dramatically improve the hole injecting efficiency while maintaining a high electron blocking property. The resistivity of the high resistance inorganic hole injecting and transporting layer can be obtained from the sheet resistance and the film thickness.

The high resistance inorganic hole injecting and transporting layer is preferably mainly composed of silicon and germanium oxide (Si _1-x Ge _x ) O _y , where x is 0 to 1, and y is 1.7 to 1.7. 2.2, preferably 1.7 to 1.99. The main component of the inorganic hole injecting and transporting layer may be silicon oxide (that is, x is 0.5 or less), germanium oxide (that is, x is more than 0.5), or a mixed thin film thereof. Good. If y is larger or smaller than this range, the hole injection function is deteriorated, which is not preferable. The composition can be examined, for example, by Rutherford backscattering, chemical analysis, and the like.

  The inorganic hole injecting and transporting layer further has a work function of 4.5 eV or more, preferably 4.5 to 6.0 eV, any of metals, metalloids and oxides, carbides, nitrides, silicides and borides thereof. It is preferable to contain 1 or more types. Metals and semimetals having a work function of 4.5 eV or more, preferably 4.5 to 6.0 eV include Au, Cu, Fe, Ni, Ru, Sn, Cr, Ir, Nb, Pt, Mo, W, Ta, Pd, and Co can be mentioned. These metals, metalloids and oxides, carbides, nitrides, silicides, and borides thereof can be used in combination, and the mixing ratio in that case is arbitrary. These contents are preferably 0.2 to 40 mol%, more preferably 1 to 20 mol%. When these contents are less than 0.2 mol%, the hole injection function is lowered, while when it is more than 40 mol%, the electron blocking function is lowered, which is not preferable. When two or more of these are used in combination, the total content is preferably within this range.

  The metal, metalloid and oxides, carbides, nitrides, silicides and borides thereof are usually contained in a dispersed state in a high resistance inorganic hole injecting and transporting layer. The particle size of the dispersed particles is usually about 1 to 5 nm. It is considered that a hopping path for transporting holes is formed between the dispersed particles as these conductors via high-resistance silicon and germanium oxides as the main components.

  The high resistance inorganic hole injecting and transporting layer may further contain H as an impurity, Ne, Ar, Kr, Xe or the like used as a sputtering gas in a total of 5 molecule% or less.

  The composition of the high resistance inorganic hole injecting and transporting layer may not be uniform, and may have a concentration gradient in the film thickness direction as long as it has such a composition as an average.

  The high resistance inorganic hole injecting and transporting layer is usually in an amorphous state.

  The high resistance inorganic hole injecting and transporting layer preferably has a thickness of 0.3 to 100 nm, more preferably 1 to 100 nm, and a thickness of 5 to 30 nm. Particularly preferred. Even if the film thickness of the high resistance inorganic hole injecting and transporting layer is less than 0.3 nm or more than 100 nm, the hole injecting function is not sufficiently exhibited.

  The high resistance inorganic hole injecting and transporting layer can be formed by various physical or chemical thin film forming methods such as sputtering and vapor deposition, but is preferably formed by the sputtering method. In particular, an oxide of silicon and germanium as main components, and one or more of metals, metalloids and oxides, carbides, nitrides, silicides and borides having a work function of 4.5 eV or more, It is preferable to form the inorganic hole injecting and transporting layer as a target by a multi-source sputtering method in which sputtering is performed separately. According to the multi-source sputtering method, sputtering can be performed under conditions suitable for each target. In addition, one or more small pieces of any one of metal, metalloid and their oxides, carbides, nitrides, silicides, and borides are disposed on the main component target, and the area ratio thereof is appropriately adjusted. Thus, if the composition is adjusted, the inorganic hole injecting and transporting layer can also be formed by a one-way sputtering method.

  When the inorganic hole injecting and transporting layer is formed by sputtering, the sputtering gas pressure is preferably set in the range of 0.1 to 1 Pascal. As the sputtering gas, an inert gas usually used for sputtering, for example, Ar, Ne, Xe, Kr, or the like can be used, and nitrogen gas can also be used as necessary. During sputtering, 1 to 99% oxygen gas may be mixed in addition to these sputtering gases.

  As the sputtering method, a high-frequency sputtering method using an RF power source or a DC sputtering method can be used, and the power of the high-frequency sputtering using the RF power source is preferably in the range of 0.1 to 10 W / square centimeter, and the film formation rate. Is preferably in the range of 0.5 to 10 nm / min, especially 1 to 5 nm.

  The substrate temperature during film formation is about 25 to 150 ° C.

  In the present invention, the electron injection electrode is preferably formed of a material capable of efficiently injecting electrons into the electron transport layer or the electron injection layer.

  In the present invention, the electron injection electrode may be provided with a high-resistance inorganic electron injection transport layer having an electron conduction path and a function of blocking holes.

  Thus, by providing a high-resistance inorganic electron injecting and transporting layer having an electron conduction path and a function of blocking holes between the organic light emitting layer and the electron injection electrode, electrons are supplied to the organic light emitting layer. The injection can be performed efficiently, and the light emission efficiency can be improved and the drive voltage can be lowered. Furthermore, by providing a high-resistance inorganic electron injecting and transporting layer having an electron conduction path and a function of blocking holes, the thickness of the organic EL display panel can be reduced, and the organic EL display panel is thinned. It becomes possible to stratify.

The high resistance inorganic electron injecting and transporting layer is preferably selected from the group consisting of Li, Na, K, Rb, Cs and Fr as a first component, having a work function of 4 eV or less, preferably 1 eV to 4 eV. One or more alkali metal elements selected from the group consisting of Mg, Ca and Sr, or one or more lanthanoid elements selected from the group consisting of La and Ce Of oxides. Among these, lithium oxide, magnesium oxide, calcium oxide, and cerium oxide are particularly preferable. When these elements are mixed and used, the mixing ratio can be arbitrarily determined. If used as a mixture of these elements, in the mixture, lithium oxide, with Li 2 _O conversion, preferably are contained at least 50 mol%.

  The high-resistance inorganic electron injecting and transporting layer further contains one or more elements selected from the group consisting of Zn, Sn, V, Ru, Sm and In as the second component. The content of the second component is preferably 0.2 to 40 mol%, more preferably 1 to 20 mol%. When the content of the second component is less than 0.2 mol%, the electron injection function is deteriorated. On the other hand, when the content exceeds 40 mol%, the hole block function is decreased, which is not preferable. When two or more elements are used in combination as the second component, the total content is preferably within such a range. The second component may exist in a metal state or an oxide state.

  As described above, one or more elements selected from the group consisting of Zn, Sn, V, Ru, Sm, and In are contained in the first component having high resistance in an amount of 0.2 to 40 mol% as the second component. By containing it and forming a conductive path, electrons can be efficiently injected from the electron injection electrode into the organic light emitting layer. This is probably because the inclusion of the second component in the first component causes the conductive material to exist in an island shape in the insulating material, thereby forming a hopping path for electron injection. .

  By containing 0.2 to 40 mol% of the second component in the first component, it becomes possible to further suppress the movement of holes from the light emitting layer to the electron injection electrode. And electrons can be efficiently recombined.

  When a high-resistance inorganic electron injecting and transporting layer is provided, a luminance equal to or higher than that of a conventional organic electron transporting layer or an organic EL element having an organic electron injecting layer can be obtained. In addition, since the heat resistance and weather resistance are high, there is an advantage that the life is long and the connectivity with the electron injection electrode, which is an inorganic material, is good, so that the occurrence of leaks and dark spots is small. Furthermore, unlike a relatively expensive organic material, an inorganic material for forming an inorganic electroinjection and transport layer is inexpensive, readily available, and easy to form an inorganic electron injection and transport layer. The manufacturing cost of the display panel can be reduced.

The resistivity of the high resistance inorganic electron injecting and transporting layer is preferably 1 Ω · cm to 1 × 10 ¹¹ Ω · cm, preferably 1 × 10 ³ Ω · cm to 1 × 10 ⁸ Ω · cm. Particularly preferred. By setting the resistivity of the inorganic electron injecting and transporting layer within such a range, it is possible to dramatically improve the electron injecting efficiency while maintaining high hole blocking properties. In this case, the sheet resistance can be measured by a four-terminal method or the like.

  The oxide of the first component usually has a stoichiometric composition, but may be slightly deviated from this to have a non-stoichiometric composition. The same applies to the oxide of the second component.

  The high-resistance inorganic electron injecting and transporting layer may further contain H as an impurity, Ne, Ar, Kr, Xe, or the like used as a sputtering gas in a total of 5 molecule% or less.

  The high resistance inorganic electron injecting and transporting layer is usually in an amorphous state.

  The high-resistance inorganic electron injecting and transporting layer preferably has a thickness of 0.2 to 30 nm, and particularly preferably has a thickness of 0.2 to 20. Even if the thickness of the high-resistance inorganic electron injecting and transporting layer is less than 0.2 nm or more than 30 nm, the function of electron injection is not sufficiently exhibited.

  The high-resistance inorganic electron injecting and transporting layer can be formed by various physical or chemical thin film forming methods such as sputtering and vapor deposition, but is preferably formed by the sputtering method. In particular, it is preferable to form the inorganic electron injecting and transporting layer by a multi-source sputtering method in which the first component and the second component are separately sputtered as targets. According to the multi-source sputtering method, sputtering can be performed under conditions suitable for each target. In addition, the inorganic electron injecting and transporting layer can be formed by a single sputtering method using a mixed target of the first component and the second component.

  When the inorganic electron injecting and transporting layer is formed by sputtering, the sputtering gas pressure is preferably set in the range of 0.1 to 1 Pascal. As the sputtering gas, an inert gas usually used in the sputtering method, for example, Ar, Ne, Xe, Kr, or the like can be used, and a nitrogen gas can also be used as necessary. During sputtering, 1 to 99% oxygen gas may be mixed in addition to these sputtering gases.

  As the sputtering method, a high-frequency sputtering method using an RF power source or a DC sputtering method can be used, and the power of the high-frequency sputtering using the RF power source is preferably in the range of 0.1 to 10 W / square centimeter, and the film formation rate. Is preferably in the range of 0.5 to 10 nm / min, especially 1 to 5 nm.

  The substrate temperature during film formation is about 25 to 150 ° C.

  In the present invention, when an electron transport layer or an electron injection layer is formed, materials that can be preferably used for forming an electron injection electrode include, for example, K, Li, Na, Mg, La, Ce, A single metal element such as Ca, Sr, Ba, Sn, Zn, or Zr, or a binary or ternary alloy containing these metal elements can be used to improve stability. Specific examples of the binary or ternary alloy containing these metal elements include Ag · Mg (Ag: 0.1 to 50 atom%), Al·Li (Li: 0.01 to 14 atom%), In -Mg (Mg: 50 to 80 atomic%), Al.Ca (Ca: 0.01 to 20 atomic%) can be mentioned.

  On the other hand, when an inorganic electron injecting and transporting layer is formed on the electron injecting electrode, it is not necessary to have an electron injecting property with a low work function. The material is not particularly limited, and a normal metal can be used. Among metals, one or more metal elements selected from the group consisting of Al, Ag, In, Ti, Cu, Au, Mo, W, Pt, Pd, and Ni, particularly, the group consisting of Al and Ag However, it can be preferably used from the viewpoint of electrical conductivity and ease of handling.

  FIG. 1 is a schematic perspective view of an organic EL display panel manufacturing apparatus according to a preferred embodiment of the present invention, and FIG. 2 is a schematic plan view thereof.

  As shown in FIGS. 1 and 2, the organic EL display panel manufacturing apparatus according to this embodiment includes a first vapor deposition source 1 and a second vapor deposition source 2, and a substrate holder on which a substrate 3 is set. 4 is provided.

  As shown in FIG. 2, the substrate 3 has a rectangular shape, and the substrate holder 4 is configured to be rotatable by a rotation mechanism (not shown).

  As shown in FIG. 1 and FIG. 2, the first vapor deposition source 1 rotates the substrate 3 in a plane including the substrate 3 by a rotation mechanism, and one vertex 3 a of the substrate 3 is the first vapor deposition source. In a plane perpendicular to the plane 3 d including the substrate 3, including a diagonal line 3 c connecting one vertex 3 a of the substrate 3 and the vertex 3 b of the substrate facing the one vertex 3 a when positioned closest to the substrate 1. Are arranged so that the center line 1a of the first vapor deposition source 1 is included and the center line 1a of the first vapor deposition source 1 passes through the vicinity of one vertex 3a of the substrate 3. The angle θ between the center line 1a of the evaporation source 1 and the plane 3d including the substrate 3 is arranged to be 10 degrees to 45 degrees.

  The first vapor deposition source 1 is disposed at a position of 100 mm below the plane 3 d including the substrate 3.

  On the other hand, as shown in FIG. 1 and FIG. 2, the second vapor deposition source 2 is below the plane 3 d including the substrate 3 on the opposite side of the first vapor deposition source 1 with respect to the substrate 3. The substrate 3 is arranged at a position of 500 mm and rotated by a rotation mechanism in a plane including the substrate 3 so that one vertex 3a of the substrate 3 is closest to the first vapor deposition source 1. Sometimes, a plane that includes a diagonal line 3c connecting a vertex 3a of the substrate 3 and a vertex 3b of the substrate facing the vertex 3a and a center line 1a of the first vapor deposition source 1 and is perpendicular to the plane 3d including the substrate 3 The center line 2a is located inside.

  In manufacturing the organic EL display panel, first, the first vapor deposition source 1 and the second vapor deposition source 2 in which the hole transporting compound is accommodated are set at predetermined positions, and a hole injection electrode is formed on the surface. The substrate 3 on which the functioning transparent electrode 5 is formed is set on the substrate holder 4.

  Next, under reduced pressure, a rotation mechanism (not shown) is driven, the substrate holder 4 is rotated, and the hole transporting compound evaporated from the first vapor deposition source 1 and the second vapor deposition source 2 is transferred to the transparent electrode 5. The hole transport layer is formed by vapor deposition on the surface.

  According to the inventor's research, when the hole transport layer is formed in this way, as shown in FIG. 3, even when the foreign material 10 is attached to the surface of the transparent electrode 5, As shown in FIG. 4, even when the convex portion 11 is formed on the surface of the transparent electrode 5 for some reason, the hole transport layer 6 having a substantially uniform film thickness is formed on the transparent electrode 5 by vapor deposition. It has been found that can be formed.

  Next, the first vapor deposition source 1 and the second vapor deposition source 2 in which one or two kinds of organic compounds involved in the light emitting function are accommodated are set at predetermined positions, and a rotating mechanism (not shown) is used under reduced pressure. ) Is driven, the substrate holder 4 is rotated, and one or two kinds of organic compounds involved in the light emitting function evaporated from the first vapor deposition source 1 and the second vapor deposition source 2 are formed on the surface of the hole transport layer 6. To form an organic light emitting layer.

  According to the inventor's research, when the organic light emitting layer is formed in this way, in the case where foreign matters are attached to the surface of the hole transport layer 6 as in the case of forming the hole transport layer 6. In addition, even when a convex portion is formed on the surface of the hole transport layer 6 for some reason, an organic light emitting layer having a substantially uniform film thickness can be formed on the hole transport layer 6 by vapor deposition. It has been found.

  Further, the first vapor deposition source 1 and the second vapor deposition source 2 in which the electron transporting compound is accommodated are set at predetermined positions, and a rotating mechanism (not shown) is driven under a reduced pressure, whereby the substrate holder 4 Are rotated, and the electron transporting compound evaporated from the first vapor deposition source 1 and the second vapor deposition source 2 is deposited on the organic light emitting layer to form an electron transport layer.

  According to the study of the present inventor, when the organic light emitting layer is formed in this way, even when foreign matter is attached to the surface of the organic light emitting layer, as in the case of forming the hole transport layer 6. In addition, even when a convex portion is formed on the surface of the organic light emitting layer for some reason, an electron transport layer having a substantially uniform film thickness can be formed on the organic light emitting layer by vapor deposition. Has been issued.

  Next, an electron injection electrode is patterned on the surface of the electron transport layer and sealed with glass to produce an organic EL display panel.

  Hereinafter, examples and comparative examples will be given to clarify the effects of the present invention.

Example As an insulating transparent substrate, glass substrate # 1737 manufactured by Corning Japan Co., Ltd. having a size of 300 mm × 400 mm was used, and tin-doped indium oxide (ITO) that functions as a hole injection electrode was transparent on the insulating transparent substrate. The electrodes were patterned to have a thickness of 100 nm to form a total of 768 transparent electrodes.

  Next, the insulating transparent substrate on which the transparent electrode was patterned was subjected to ultrasonic cleaning using a neutral detergent, dried, and then subjected to UV ozone cleaning.

The insulating transparent substrate thus cleaned was transferred into a vacuum film formation tank and fixed to a rotatable substrate holder, and then the vacuum film formation tank was depressurized to 1 × 10 ⁻⁴ Pa or less.

  Next, when the first vapor deposition source is positioned in the vacuum film formation tank so that the top of the substrate is closest to the vapor deposition source by rotating the substrate holder, A center line of the first evaporation source is included in a plane perpendicular to the plane including the substrate, and the center line of the first evaporation source is It is arranged so as to pass through the vicinity of one apex, and only 100 mm from the substrate set in the substrate holder so that the angle between the center line of the first vapor deposition source and the plane including the substrate is 10 degrees. It is placed at a lower position, and is positioned on the opposite side of the first deposition source with respect to the substrate, and the substrate holder is rotated so that one vertex of the substrate is closest to the first deposition source. The top of the board and the top of the board facing the top. The center line is located in a plane perpendicular to the plane including the substrate and the center line of the first deposition source, and the angle between the center line and the plane including the substrate is 60 degrees. Thus, N, N′-diphenyl accommodated in the first vapor deposition source and the second vapor deposition source by disposing the second vapor deposition source at a position 400 mm below the substrate set in the substrate holder -N, N'-bis (N- (4-methylphenyl) -N-phenyl- (4-aminophenyl))-1,1'-bisphenyl-4,4'-diamine on a transparent electrode, Vapor deposition was performed at a deposition rate of 0.1 nm / sec to form a hole injection layer having a thickness of 10 nm.

  Furthermore, the first containing N, N′-diphenyl-N, N′-bis (1-naphthyl) -1,1′-diphenyl-4,4′-4,4-diamine in a vacuum film formation tank. And a second evaporation source are set, and N, N′-diphenyl-N, N′-bis (1-naphthyl) -1,1′-diphenyl-4,4′- is formed on the hole injection layer. 4,4-diamine was deposited at a deposition rate of 0.1 nm / sec to form a hole transport layer having a thickness of 40 nm.

  Next, a first vapor deposition source and a second vapor deposition source containing a distyrylarylene derivative represented by the following structural formula and rubrene represented by the following structural formula in a volume ratio of 100: 3 in a vacuum film formation tank. A lower light emitting layer having a thickness of 10 nm is formed by co-evaporating a mixture containing a distyrylarylene derivative and rubrene in a volume ratio of 100: 3 on a hole transport layer at a deposition rate of 0.1 nm / sec. Formed.

  Here, Ar is an aryl group, and R is a methyl group.

  Furthermore, in the vacuum film formation tank, set the first vapor deposition source and the second vapor deposition source containing coumarin represented by the following structural formula and quinacridone represented by the following structural formula in a volume ratio of 100: 3, A mixture containing coumarin and quinacridone at a volume ratio of 100: 3 was co-evaporated on the lower light emitting layer at a deposition rate of 0.1 nm / sec to form an upper light emitting layer having a thickness of 30 nm.

  Next, the first vapor deposition source and the second vapor deposition source containing the above-mentioned distyrylarylene derivative are set in the vacuum film formation tank, and the distyrylarylene derivative is emitted from the top at a deposition rate of 0.1 nm / sec. An electron transport layer having a thickness of 30 nm was formed on the layer by vapor deposition.

  Furthermore, a first deposition source and a second deposition source containing LiF were set in a vacuum film formation tank, and LiF was deposited on the electron transport layer at a deposition rate of 0.01 nm / sec. An inorganic electron injection layer having a thickness of .7 nm was formed.

  Next, a first vapor deposition source and a second vapor deposition source containing Al were set in a vacuum film formation tank, and Al was deposited on the inorganic electron injection layer at a deposition rate of 0.8 nm / sec on a transparent electrode. Evaporation was performed so as to be substantially orthogonal to form a total of 64 electron injection electrodes having a thickness of 300 nm.

  Thus, an organic EL display panel sample in which 256 × 64 pixels each having a size of 350 μm × 350 μm were formed was produced.

  Similarly, a total of 100 organic EL display panel samples were produced.

  When a total of 100 organic EL display panel samples produced in this way were observed, the variation in the film thickness of the layer formed on the substrate was 8.0%, and a sufficiently uniform layer was formed on the substrate. It has been confirmed.

  Furthermore, when a voltage was applied in the reverse direction to each of a total of 100 organic EL display panel samples, no organic EL display panel sample in which a current of 0.1 μA flowed was recognized, and the occurrence of leakage current could be prevented. It has been found.

Comparative Example Without using the first vapor deposition source, rotate the substrate holder on the same side as the second vapor deposition source used in the example with respect to the substrate, and rotate the substrate holder. In a plane perpendicular to the plane containing the substrate, including a diagonal line connecting one vertex of the substrate and the vertex of the substrate facing the one vertex when the vertex is positioned closest to the second deposition source. In addition, the center line is located, and the center line and the plane including the substrate are at an angle of 75 degrees, except that the center line is placed at a position 500 mm below the substrate set in the substrate holder. In the same manner as in the example, a total of 100 organic EL display panel comparative samples were produced.

  When a total of 100 organic EL display panel comparative samples prepared in this manner were observed, the variation in the film thickness of the layer formed on the substrate was 8.4%.

  Furthermore, when a voltage was applied in the reverse direction to each of the 100 organic EL display panel comparative samples, a current of 0.1 μA flowed through the 10 organic EL display panel comparative samples, and the occurrence of leakage current was observed. It was.

  The present invention is not limited to the above embodiments and examples, and various modifications can be made within the scope of the invention described in the claims, and these are also included in the scope of the present invention. It goes without saying that it is a thing.

  For example, in the embodiment shown in FIGS. 1 to 4, the hole transport layer 6 is formed on the transparent electrode 5 formed on the substrate 3 by vapor deposition, but on the transparent electrode 5 by vapor deposition. It is not always necessary to form the hole transport layer 6. The hole injection layer is formed on the transparent electrode 5 by vapor deposition, and the hole transport layer 6 is formed on the hole injection layer by vapor deposition. Alternatively, an organic light emitting layer can be formed on the transparent electrode 5 by vapor deposition.

  Further, in the embodiment shown in FIGS. 1 to 4, the hole transport layer 6 and the organic light emitting layer are formed on the transparent electrode 5 formed on the substrate 3, and the electrons are deposited on the organic light emitting layer by vapor deposition. Although the transport layer is formed, it is not always necessary to form the electron transport layer by vapor deposition on the organic light emitting layer. The electron transport layer is formed by vapor deposition on the electron injection electrode formed on the substrate 3. Further, an electron injection layer is formed on the electron injection electrode formed on the substrate 3 by vapor deposition, and an electron transport layer is formed on the electron injection layer by vapor deposition, or organic A light emitting layer may be formed.

  Further, in the above-described embodiment, a description has been given regarding the case where the substrate that functions as the support or the substrate that is provided on the opposite side of the substrate that functions as the support and faces the substrate that functions as the support is transparent. It is not always necessary that only one of the substrate that functions as the support and the substrate that functions as the support is transparent, and the substrate that functions as the support and the substrate that functions as the support. Both may be formed of a transparent material.

FIG. 1 is a schematic perspective view of an organic EL display panel manufacturing apparatus according to a preferred embodiment of the present invention. FIG. 2 is a schematic plan view of FIG. FIG. 3 is an enlarged schematic cross-sectional view of a hole transport layer deposited on a transparent electrode when foreign matter is adhered on the transparent electrode functioning as a hole injection electrode. FIG. 4 is an enlarged schematic cross-sectional view of a hole transport layer deposited on a transparent electrode when a convex portion is formed on the transparent electrode functioning as a hole injection electrode.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 1st vapor deposition source 1a Center line of 1st vapor deposition source 2 2nd vapor deposition source 2a Center line of 2nd vapor deposition source 3 Substrate 3a One vertex of substrate 3b Vertex facing one vertex of substrate 3c Diagonal line of substrate 3d plane including substrate 4 substrate holder 5 transparent electrode 6 hole transport layer

Claims (13)

A method of manufacturing an organic EL display panel comprising a substrate, two electrodes at least one of which is transparent, and an organic layer including at least one organic light emitting layer between the two electrodes, the two electrodes An organic EL display panel is formed by forming a vapor deposition layer by vapor deposition so that one surface of the two electrodes is uniformly covered on one surface of the organic EL display panel. Method. The organic light emitting layer is formed by forming the vapor deposition layer by vapor deposition so that one surface of the two electrodes is uniformly covered on one surface of the two electrodes. The manufacturing method of the organic electroluminescent display panel of Claim 1. The two electrodes are constituted by a transparent hole injection electrode and an electron injection electrode, and the vapor deposition layer is formed by vapor deposition so that the surface of the hole injection electrode is uniformly covered on the surface of the hole injection electrode. The method of manufacturing an organic EL display panel according to claim 1, wherein the organic light emitting layer is formed. The two electrodes are constituted by a transparent hole injection electrode and an electron injection electrode, and the vapor deposition layer is formed by vapor deposition so that the surface of the hole injection electrode is uniformly covered on the surface of the hole injection electrode. The method for producing an organic EL display panel according to claim 1, wherein a hole transport layer is formed. The two electrodes are constituted by a hole injection electrode and a transparent electron injection electrode, and the vapor deposition layer is formed by vapor deposition so that the surface of the hole injection electrode is uniformly covered on the surface of the hole injection electrode. The method of manufacturing an organic EL display panel according to claim 1, wherein the organic light emitting layer is formed. The two electrodes are constituted by a hole injection electrode and a transparent electron injection electrode, and the vapor deposition layer is formed by vapor deposition so that the surface of the hole injection electrode is uniformly covered on the surface of the hole injection electrode. The method for producing an organic EL display panel according to claim 1, wherein a hole transport layer is formed. The two electrodes are constituted by a transparent hole injection electrode and an electron injection electrode, and the vapor deposition layer is formed by vapor deposition so that the surface of the electron injection electrode is uniformly covered on the surface of the electron injection electrode. The method of manufacturing an organic EL display panel according to claim 1, wherein the organic light emitting layer is formed. The two electrodes are constituted by a transparent hole injection electrode and an electron injection electrode, and the vapor deposition layer is formed by vapor deposition so that the surface of the electron injection electrode is uniformly covered on the surface of the electron injection electrode. The method for producing an organic EL display panel according to claim 1, wherein an electron transport layer is formed. The organic EL display panel according to any one of claims 1 to 8, wherein the vapor deposition layer is formed by vapor deposition so that a film thickness distribution of the vapor deposition layer becomes ± 10% or less. Production method. When the substrate has a substantially rectangular shape, the deposition source is rotated in a plane including the substrate, and one vertex of the substrate is positioned closest to the deposition source. A diagonal line connecting the one vertex of the substrate and the vertex of the substrate facing the one vertex, a center line of the deposition source is included in a plane perpendicular to the plane including the substrate, and The center line of the vapor deposition source is disposed so as to pass near the top of the substrate, and an angle formed by the center line of the vapor deposition source and the plane including the substrate is 10 degrees to 45 degrees. The vapor deposition layer is formed by vapor deposition while rotating the substrate in a plane including the substrate and arranging the vapor deposition layer so that the substrate is rotated. The manufacturing method of the organic electroluminescent display panel of description. Further, the substrate is positioned on the opposite side of the vapor deposition source, and the substrate is rotated in a plane including the substrate so that one vertex of the substrate is closest to the vapor deposition source. A diagonal line connecting the one apex of the substrate and the apex of the substrate facing the one apex when positioned, and the center line of the vapor deposition source, and in a plane perpendicular to the plane including the substrate The method of manufacturing an organic EL display panel according to claim 10, wherein a second vapor deposition source is arranged so that the center line is positioned, and the vapor deposition layer is formed by vapor deposition. An apparatus for producing an organic EL display panel comprising a substantially rectangular substrate, two electrodes at least one of which is transparent, and an organic layer including at least one organic light emitting layer between the two electrodes, A rotation mechanism for rotating the substrate in a plane including the substrate; and a vapor deposition source, wherein the vapor deposition source rotates the substrate in a plane including the substrate by the rotation mechanism, The plane including the substrate, including a diagonal line connecting the one vertex of the substrate and the vertex of the substrate facing the one vertex when one vertex is positioned closest to the deposition source. A center line of the deposition source is included in a plane perpendicular to the substrate, and the center line of the deposition source passes through the vicinity of the vertex of the substrate. The center line and the substrate Angle between the plane containing the organic EL display panel manufacturing apparatus characterized by being arranged such that no 10 degrees to 45 degrees. Further, the substrate is disposed on the opposite side of the vapor deposition source with respect to the substrate, and the substrate is rotated in a plane including the substrate so that one vertex of the substrate is closest to the vapor deposition source. A diagonal line connecting the one apex of the substrate and the apex of the substrate facing the one apex when positioned, and the center line of the vapor deposition source, and in a plane perpendicular to the plane including the substrate The apparatus for producing an organic EL display panel according to claim 12, further comprising a second vapor deposition source arranged so that a center line thereof is located.

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