JP2005074367A - Thin film pattern forming method, film, electronic device, liquid crystal panel and electronic apparatus - Google Patents

Abstract

An object of the present invention is to provide a method of forming a film while suitably preventing a meniscus shape, and to provide an electronic device, a liquid crystal panel, and an electronic apparatus provided with the film obtained by the method.
A thin film pattern forming method of the present invention includes a liquid application step of applying a film forming liquid on a substrate 5 coated with a mask, and in the liquid application step, The film is formed so that the contact angle of the liquid 7 with respect to the inner surface of the opening is 90 ° or more. The mask 6 has a base portion 61 and a surface layer 62 provided on the surface side of the base portion 61. The surface layer 62 is preferably composed mainly of a fluorine-containing compound and / or a silicon-based compound. The surface layer 62 is preferably formed by plasma polymerization.
[Selection] Figure 1

Description

  The present invention relates to a thin film pattern forming method, a film, an electronic device, a liquid crystal panel, and an electronic apparatus.

2. Description of the Related Art In recent years, thin film patterns have been made multilayered with increasing integration in semiconductor devices that are electronic devices. Conventionally, when forming a thin film pattern, as shown in Patent Document 1, it is widely used to apply a mask mainly composed of a resin after providing a film (thin film) for forming the thin film pattern. Has been done.
However, conventionally, the mask is only required to have a function of reliably protecting a region where a thin film pattern is formed. In other words, conventionally, a mask that has excellent adhesion to the film and that hardly floats or peels off from the film has been used. Regarding the relationship between the mask and the liquid for forming the film, Was not considered.

  However, in the conventional method, when forming a film, a film having a fine shape and pattern and a relatively small film thickness, such as an insulating film and a conductive film (electrode) constituting a semiconductor device. When the (thin film) is formed, the film to be formed has a meniscus shape, which causes a sharp (acute angle) edge to rise to the outer surface side, making it difficult to form a film with a uniform thickness, Due to the sharp edges of the film, other films that are stacked are damaged, adhesion between adjacent films is reduced, short circuit with the upper wiring (film) occurs, or due to characteristic changes The present inventor has found that various problems such as occurrence of color unevenness are likely to occur.

JP 2001-267320 A

  An object of the present invention is to provide a method of forming a film while suitably preventing a meniscus shape, and to provide an electronic device, a liquid crystal panel, and an electronic apparatus provided with the film obtained by the method There is to do.

Such an object is achieved by the present invention described below.
The thin film pattern forming method of the present invention is a thin film pattern forming method having a liquid application step of applying a liquid for forming a film on a substrate coated with a mask,
In the liquid application step, the film is formed such that a contact angle of the liquid with respect to the inner surface of the opening of the mask is 90 ° or more.
Thereby, the method of forming a film | membrane can be provided, preventing suitably becoming a meniscus shape.

In the thin film pattern formation method of this invention, it is preferable that the atmospheric temperature in the said liquid provision process is 0-400 degreeC.
Thereby, even if heat treatment is necessary in the film forming step, the film can be more effectively prevented from having a meniscus shape.
In the thin film pattern forming method of the present invention, it is preferable that the mask has a surface free energy of 20 mN / m or less at a portion in contact with the liquid.
Thereby, it can prevent more effectively that a film | membrane becomes meniscus shape.

In the thin film pattern forming method of the present invention, the mask is preferably subjected to a liquid repellent treatment.
Thereby, it can prevent more effectively that a film | membrane becomes meniscus shape.
In the thin film pattern forming method of the present invention, it is preferable that the mask has a base portion and a surface layer provided on the surface side of the base portion.
Thereby, it can prevent effectively that a film | membrane becomes meniscus shape, utilizing the characteristic of the constituent material of a base.

In the thin film pattern forming method of the present invention, the surface layer is preferably composed mainly of a fluorine-containing compound and / or a silicon-based compound.
This can more effectively prevent the film from having a meniscus shape and improve the stability and reliability of the mask.
In the thin film pattern forming method of the present invention, the surface layer is preferably formed by plasma polymerization.
Thereby, the adhesiveness between the base and the surface layer is particularly excellent, and the reliability of the mask is improved.

In the thin film pattern forming method of the present invention, the surface layer is preferably formed by a vapor deposition method.
Thereby, the adhesiveness between the base and the surface layer is particularly excellent, and the reliability of the mask is improved.
In the thin film pattern forming method of the present invention, the surface layer is preferably formed by a coating method.
Thereby, a mask can be formed relatively easily.

In the thin film pattern forming method of the present invention, the liquid is preferably a solution, and the solvent constituting the solution preferably has a surface tension of 50 mN / m or more.
Thereby, it can prevent more effectively that a film | membrane becomes meniscus shape.
In the thin film pattern forming method of the present invention, the solvent is preferably water.
Thereby, it can prevent more effectively that a film | membrane becomes meniscus shape.

The membrane of the present invention is obtained by the method of the present invention.
As a result, it is possible to provide a film that is suitably prevented from having a meniscus shape.
An electronic device according to the present invention includes the film according to the present invention.
Thereby, it is possible to provide an electronic device in which inconvenience due to the meniscus shape of the film hardly occurs.

The liquid crystal panel of the present invention is provided with the film of the present invention.
Thereby, it is possible to provide a liquid crystal panel in which inconvenience due to the film having a meniscus shape hardly occurs.
In the liquid crystal panel of the present invention, it is preferable that the film functions as an electrode.
Thereby, it is possible to provide a liquid crystal panel in which inconvenience due to the film having a meniscus shape hardly occurs.
In the liquid crystal panel of the present invention, the film preferably functions as an insulating film.
Thereby, it is possible to provide a liquid crystal panel in which inconvenience due to the film having a meniscus shape hardly occurs.

An electronic apparatus according to the present invention includes the film according to the present invention.
Thereby, it is possible to provide an electronic device in which inconvenience due to the film having a meniscus shape hardly occurs.
An electronic apparatus according to the present invention includes the liquid crystal panel according to the present invention.
Thereby, it is possible to provide an electronic device in which inconvenience due to the film having a meniscus shape hardly occurs.
An electronic apparatus according to the present invention includes a light valve including the liquid crystal panel according to the present invention, and projects an image using at least one light valve.
Thereby, it is possible to provide an electronic device in which inconvenience due to the film having a meniscus shape hardly occurs.

The electronic device of the present invention separates the light from the three light valves corresponding to red, green, and blue forming an image, the light source, and the light from the light source into red, green, and blue light, and corresponds to each of the lights An electronic apparatus having a color separation optical system that leads to the light valve, a color synthesis optical system that synthesizes the images, and a projection optical system that projects the synthesized image,
The light valve includes the liquid crystal panel of the present invention.
Thereby, it is possible to provide an electronic device in which inconvenience due to the film having a meniscus shape hardly occurs.

  ADVANTAGE OF THE INVENTION According to this invention, the method of forming a film | membrane can be provided, preventing suitably becoming a meniscus shape, and the electronic device, liquid crystal panel, and electronic device provided with the film | membrane obtained by this method Can be provided.

Hereinafter, a thin film pattern forming method, a film, an electronic device, a liquid crystal panel, and an electronic apparatus according to the present invention will be described in detail with reference to the accompanying drawings.
First, a preferred embodiment of the thin film pattern forming method of the present invention will be described, and then a liquid crystal panel as an electronic device obtained by applying the method and a method for producing the panel (TFT (thin film transistor) constituting the panel) Will be described in detail.

FIG. 1 is a cross-sectional view showing a preferred embodiment of the thin film pattern forming method of the present invention.
As shown in FIG. 1, in this embodiment, the process (1b) of forming the mask 6 on the surface (1a) of the base material 5 and the film-forming side of the base material 5 covered with the mask 6 are used. A liquid application step (1c) for applying the liquid 7, a step (1d) for solidifying the liquid 7, and a step (1e) for removing the mask 6 are included.

[Coating of mask 6 (mask coating process)]
First, the mask 6 is coated on the surface (1a) of the substrate 5 (1b).
The constituent material of the substrate 5 may be any material, but when the present invention is applied to the manufacture of an electronic device as described later, for example, quartz glass, silicon dioxide, silicon nitride, polyethylene terephthalate, polyimide, various types Various insulating materials (dielectric materials) such as low dielectric constant materials (so-called low-K materials), silicon (eg, amorphous silicon, polycrystalline silicon, etc.), indium tin oxide (ITO), indium oxide (IO), oxidation Conductive materials such as tin (SnO ₂ ), antimontin oxide (ATO), indium zinc oxide (IZO), Al, Al alloy, Cr, Mo, and Ta can be used.
The mask 6 functions as a mask when the film 8 having a predetermined shape and pattern is formed (when the liquid 7 is applied on the base material 5 in a predetermined shape and pattern). That is, as a result, the film 8 is not formed on the portion of the substrate 5 that is covered with the mask 6, and the film 8 is preferably formed on the portion that is not covered with the mask 6 on the same side. be able to.

  By the way, when forming a film having a predetermined shape and pattern, a mask has been conventionally used. However, conventionally, the mask is only required to have a function of reliably protecting the region where the thin film pattern is formed. In other words, conventionally, a mask that has excellent adhesion to the film and that hardly floats or peels off from the film has been used. Regarding the relationship between the mask and the liquid for forming the film, Was not considered.

  On the other hand, in the conventional method, the present inventors, when forming a film, in particular, a fine shape such as an insulating film or a conductive film (electrode) constituting an electronic device (semiconductor device) described later, When a film having a pattern and a relatively small film thickness is formed, the formed film 8 ′ has a meniscus shape (see FIG. 9), whereby a sharp (acute angle) edge 81 ′ is formed. It swells on the outer surface side, and it becomes difficult to form a film with a uniform thickness, the sharp edge 81 ′ of the film 8 ′ damages other films to be laminated, or between adjacent films It has been found that various problems such as poor adhesion, short circuit with the upper layer wiring (film), and color unevenness due to characteristic changes are likely to occur. The contact angle between the inner surface of the opening of the mask and the liquid for film formation is By setting the angle to 0 ° or more, it is possible to suitably prevent the formed film from having a meniscus shape (a meniscus shape in which the vicinity of the edge protrudes), and effectively prevent the occurrence of the above problems. I found that I can do it. As described above, in the present invention, in the liquid application step, the contact angle of the film forming liquid with respect to the inner surface of the opening of the mask is set to 90 ° or more. It is preferably ˜130 °, more preferably 90 ° to 110 °. As a result, the occurrence of the problem as described above can be prevented more effectively, and the effect of the present invention becomes more remarkable. In the following description, the mask having the function of preventing the formed film from having a meniscus shape when the contact angle of the film-forming liquid is 90 ° or more as described above, Also referred to as “control mask”.

The contact angle between the mask 6 and the liquid 7 depends on various conditions such as the composition of the liquid 7, the composition of the mask 6, the surface shape (surface properties), and the temperature thereof. However, the mask 6 preferably has a surface free energy of 20 mN / m or less at a portion in contact with the liquid 7 in the liquid application step described later. 15 mN / m or less is more preferable. Thereby, it can prevent more effectively that the film | membrane 8 formed becomes a meniscus shape. Examples of materials that satisfy such conditions include fluorine-containing resins such as polytetrafluoroethylene (PTFE) and ethylene-tetrafluoroethylene copolymers, fluorine-containing surfactants (hydrocarbon surfactants). Fluorine-containing compounds such as those in which all or part of the hydrogen atoms of the hydrophobic group are substituted with fluorine atoms), alkyl-based silane coupling agents (general formula: Y-SiX ₃ [where Y: all organic functional groups, especially alkyl Group CH ₃ — (CH ₂ ) _n —, X: hydrolyzable group (—OR, —Cl, —NR _2, etc.)], fluorine-containing silane coupling agent (hydrogen of organic functional group forming silane coupling agent) And silicon compounds such as those in which atoms are completely or partially substituted with fluorine atoms).

  Further, it is preferable that the mask 6 has been subjected to a liquid repellent treatment (particularly, a water repellent treatment or a hydrophobic treatment) on at least a part near the surface thereof. Thereby, it can prevent more effectively that the film | membrane 8 formed becomes a meniscus shape. Examples of the liquid repellent treatment include formation of a surface layer made of a liquid repellent material (water repellent material), surface roughening treatment (roughness processing) of the mask 6, and the like in the present embodiment. A surface layer made of a liquid repellent material is provided. That is, in the present embodiment, the mask 6 is configured to include the base portion 61 and the surface layer 62. When the mask 6 has such a configuration, the characteristics of the constituent material of the base 61 (for example, excellent mechanical strength, workability (ease of processing), adhesion to the substrate 5 and the like) are fully utilized. However, it is possible to effectively prevent the formed film 8 from having a meniscus shape.

  When the mask 6 has a base 61 and a surface layer 62 as shown in the drawing, the constituent material of the base 61 is not particularly limited. For example, a novolac resin, an acrylic resin, and a polyimide resin Resin materials such as polysulfone resin, epoxy resin, metal materials such as aluminum, chromium, copper, silver, gold, tantalum, tungsten, indium, tin, zinc, oxides, nitrides, alloys, etc. of the metal materials Can be used.

The constituent material of the surface layer 62 is not particularly limited. For example, fluorine-containing resins such as polytetrafluoroethylene and ethylene-tetrafluoroethylene copolymer, fluorine-containing surfactants (hydrocarbon surfactants) Fluorine-containing compounds such as those in which the hydrogen atoms of the hydrophobic group of the agent are all or partly substituted with fluorine atoms), alkyl-based silane coupling agents (general formula: Y-SiX ₃ [Y: all organic functional groups, especially alkyl Group CH ₃ — (CH ₂ ) _n —, X: hydrolyzable group (—OR, —Cl, —NR _2, etc.)], fluorine-containing silane coupling agent (hydrogen of organic functional group forming silane coupling agent) A silicon-based compound such as a compound in which atoms are completely or partially substituted with fluorine atoms.) Among these, as a constituent material of the surface layer 62, fluorine-containing compounds can be used. Preferably, the surface layer 62 is made of a material containing a fluorine-containing compound and / or a silicon-based compound, and more effectively prevents the formed film 8 from having a meniscus shape. In addition, the stability of the mask 6 is particularly excellent.

  In the configuration shown in the figure, the surface layer 62 is formed on a portion of the surface of the base 61 other than the lower surface (the surface facing the base material 5). As described above, the surface layer 62 may be formed on at least a part of the base 61 (the surface of the base 61), or may be formed so as to cover the entire surface of the base 61. Although there may be a portion where the surface layer 62 is not formed on the lower surface side of the base 61, the features of the constituent material of the base 61 (for example, excellent adhesion with the base material 5 and the liquid 7 and the base 61. The improvement of embedding property of the liquid 7 due to the lyophilicity (improvement of patterning property of the film 8) and the like can be more effectively exhibited.

  The method for forming the surface layer 62 is not particularly limited. For example, wet plating methods such as electrolytic plating, immersion plating, and electroless plating, and chemical vapor deposition methods (CVD such as vacuum deposition, sputtering, thermal CVD, plasma CVD, and laser CVD). ), Gas phase deposition methods such as ion plating (dry plating method), dip coating, doctor blade, spin coating, brush coating, spray coating, electrostatic coating, electrodeposition coating, roll coater, and other coating methods, thermal spraying And a method of polymerizing (in particular, plasma polymerization) a precursor (monomer, dimer, trimer, oligomer, prepolymer, etc.) corresponding to the constituent material of the surface layer 62 on the base 61. .

  Among these, when the surface layer 62 is formed by a vapor deposition method (particularly, various chemical vapor deposition methods or vacuum vapor deposition), the adhesion between the base 61 and the surface layer 62 is particularly excellent, and the reliability of the mask 6 is improved. Will improve. Further, when the surface layer 62 is formed by a coating method (particularly, spin coating or dip coating), the mask 6 can be formed relatively easily. Further, when the surface layer 62 is formed by plasma polymerization, the adhesion between the base portion 61 and the surface layer 62 is particularly excellent, and the reliability of the mask 6 is improved. Further, when applying plasma polymerization, more specifically, the surface layer 62 can be formed by the following method. That is, a gas containing fluorine atoms such as carbon tetrafluoride is decomposed by atmospheric pressure plasma to generate active fluorine atoms (fluorine single atoms) and fluorine ions (hereinafter collectively referred to as “active fluorine”). The surface layer 62 can be formed on the base 61 by exposing the base 61 to the activated fluorine.

  The formation of the surface layer 62 is performed after the surface of the base material 5 is coated with a material to be the base 61 (performed on the base material 5). As a constituent material (or a precursor thereof) of the surface layer 62, it is preferable to use a material having excellent affinity with the base 61 and inferior affinity with the substrate 5, for example, a fluorine plasma polymerized film. . As a result, the surface layer 62 can be selectively formed on the base 61, and a film composed of the constituent material of the surface layer 62 is formed on the surface of the substrate 5 (exposed portion where the base 61 is not covered). Can be effectively prevented. In addition, a coating composed of the constituent material of the surface layer 62 is formed on the outer surface of the base 61 and the outer surface of the base 5 (exposed portion where the base 61 is not covered), and then the outer surface of the base 5 The film formed (remaining) on the surface of the base 61 may be used as the surface layer 62 by removing the film formed on (the part where the base 61 is not covered) by etching (particularly dry etching) or the like. .

  The method for coating the mask 6 on the surface of the base material 5 is not particularly limited, and as described above, after the base portion 61 is formed on the base material 5, the surface layer 62 is further formed. Alternatively, the mask 6 having the base 61 and the surface layer 62 may be formed directly on the substrate 5. As a specific method for forming the mask 6 (or the base 61) on the substrate 5, for example, various film forming methods exemplified as the method for forming the surface layer 62, a photolithography method, or the like may be applied. it can. Among these, the mask 6 having a fine shape and pattern can be easily and reliably formed by applying the photolithography method.

Moreover, the mask 6 is not limited to what is formed in the surface of the base material 5 so that it may become a desired shape and pattern directly. For example, the mask 6 having a desired shape and pattern may be obtained by covering a substantially entire surface of the substrate 5 with a film made of the constituent material of the mask 6 and then removing a part of the film. As a method for removing a part of the film, for example, an ultraviolet ray, a Ne-He laser, an Ar laser, a CO ₂ laser, a ruby laser, a semiconductor laser, a YAG laser, a glass laser, or a YVO _The method of irradiating various lasers, such as ₄ laser and an excimer laser, is mentioned.

  The average thickness of the mask 6 is not particularly limited, but is preferably 0.05 to 15 μm and more preferably 0.2 to 10 μm when applied to the manufacture of an electronic device as described later. If the average thickness of the mask 6 is less than the lower limit value, pinholes tend to be easily generated in the mask 6, and the liquid may completely cover the mask and may not function as a mask. There is. On the other hand, when the average thickness of the mask 6 exceeds the upper limit value, the variation in film thickness at each portion of the mask 6 tends to increase. In addition, the internal stress of the mask 6 is increased, and as a result, the adhesion between the mask 6 and the base material 5 is reduced, and cracks are easily generated.

The mask 6 is preferably transparent. Thereby, it becomes possible to visually recognize the contact state with the substrate 5 from the outside.
In the configuration shown in the drawing, the mask 6 is composed of the base 61 and the surface layer 62. However, in the present invention, a mask having a substantially uniform composition may be used as the mask. Those having at least one underlayer between the surface layer and the surface layer may be used.

[Application of liquid 7 (liquid application process)]
Next, a film-forming liquid 7 is applied to the surface of the substrate 5 covered with the mask 6 (1c).
As described above, the present invention is characterized in that the contact angle of the film-forming liquid with respect to the mask in the liquid application step is 90 ° or more. When the liquid 7 comes into contact with the mask 6 at such a contact angle, the liquid surface of the liquid 7 applied on the base material 5 becomes a meniscus shape (a meniscus shape in which the edge is raised to the outer surface side). The film 8 finally formed can be effectively prevented from having a meniscus shape.

  The liquid 7 is not particularly limited as long as it includes at least the constituent material of the film 8 to be formed or a precursor thereof (hereinafter collectively referred to as “the constituent material of the film 8”). 8 is preferably a solution in which the constituent material of 8 is dissolved, or a dispersion liquid in which the constituent material of the film 8 is dispersed in a dispersion medium. Thereby, characteristics, such as the viscosity of the liquid 7, surface tension (surface free energy), can be adjusted easily.

When the liquid 7 is a solution, the solvent constituting the solution preferably has a surface tension (surface free energy) of 50 mN / m or more under the condition of applying the liquid 7 on the substrate 5, More preferably, it is 75 mN / m. Thereby, it can prevent more effectively that a film | membrane becomes meniscus shape.
Moreover, when the liquid 7 is a solution, it is preferable that the solvent which comprises this solution is water. Thereby, it can prevent more effectively that a film | membrane becomes meniscus shape.
Examples of the method for applying the liquid 7 on the substrate 5 include various coating methods such as dipping, doctor blade, spin coating, brush coating, spray coating, electrostatic coating, electrodeposition coating, roll coater, and the like. Of these, the spin coating method is particularly preferred.

Moreover, it is preferable that the atmospheric temperature in this process is 0-400 degreeC, and it is more preferable that it is 20-350 degreeC. This can more effectively prevent the film 8 from having a meniscus shape even when heat treatment is required in the film forming process.
Further, this step may be performed in any atmosphere such as an oxidizing atmosphere, a reducing atmosphere, or an inert atmosphere.

[Thinning (solidification) of liquid 7 (thinning process)]
Next, the liquid 7 applied on the substrate 5 is thinned (solidified) to form a film 8 (1d). As described above, in the liquid application step, the liquid 7 applied on the base material 5 is preferably prevented from having a meniscus shape, so that the film 8 formed in this step also has an effective meniscus shape. Will be prevented. As a result, the obtained film 8 is less likely to cause various problems as described above.

The thinning of the liquid 7 can be performed, for example, by placing the base material 5 to which the liquid 7 is applied under reduced pressure (vacuum) or by performing a heat treatment on the liquid 7 on the base material 5.
When heat-treating the liquid 7 on the substrate 5, the treatment temperature varies depending on the composition of the liquid 7 and the like, but is preferably about 25 to 900 ° C, more preferably about 60 to 500 ° C. Moreover, although the processing time of heat processing changes with compositions of the liquid 7, etc., it is preferable that it is about 1 to 90 minutes, and it is more preferable that it is about 2 to 60 minutes.

The heat treatment may be performed in any atmosphere such as an oxidizing atmosphere, a reducing atmosphere, an inert atmosphere, and the like. Further, the heat treatment may be performed under vacuum or under reduced pressure.
Further, the heat treatment may be performed twice or more under different conditions. For example, the first heat treatment is performed at a relatively low temperature (for example, about 25 to 150 ° C.) mainly for the purpose of removing the solvent and the dispersion medium contained in the liquid 7, and then in a non-oxidizing atmosphere (non-oxidizing atmosphere In an active atmosphere), a second heat treatment may be performed at a relatively high temperature (for example, about 200 to 500 ° C.) mainly for firing and sintering. As described above, by performing the heat treatment a plurality of times, it is possible to suppress the deformation of the thin film pattern accompanying the change in the shape of the mask due to the high temperature even in the formation of the thin film pattern that requires the heat treatment at a high temperature. It is done.
The film thickness of the film 8 is not particularly limited, but when the film 8 constitutes an electronic device as described later, it is preferably 0.005 to 10 μm, more preferably 0.01 to 8 μm. preferable.

[Removal of Mask 6 (Mask Removal Process)]
After the thinning process (solidification process), the mask 6 is removed (1e).
The mask 6 may be removed by any method. For example, ashing under an atmospheric pressure or reduced pressure using oxygen plasma or ozone, ultraviolet rays, Ne-He laser, Ar laser, CO ₂ laser, or the like. , Irradiation with various lasers such as ruby laser, semiconductor laser, YAG laser, glass laser, YVO ₄ laser, and excimer laser, immersion in an organic solvent or an inorganic solution capable of dissolving and decomposing the mask 6.
Although the present embodiment has been described as having a mask removal step, the mask removal step may be omitted depending on the use of a member obtained by applying the present invention (a member having the film of the present invention). Also good.

Next, a liquid crystal panel as an electronic device obtained by applying the thin film pattern forming method of the present invention as described above and a method for manufacturing the panel (a detailed method for forming a TFT (thin film transistor) constituting the panel) will be described. To do.
FIG. 2 is a schematic longitudinal sectional view showing a preferred embodiment of the liquid crystal panel of the present invention, and FIG. 3 is an enlarged sectional view in the vicinity of the thin film transistor of the liquid crystal panel shown in FIG.
As shown in FIG. 2, a liquid crystal panel (TFT liquid crystal panel) 100 includes a TFT substrate (liquid crystal driving substrate) 9, an alignment film 3 bonded to the TFT substrate 9, a counter substrate for liquid crystal panel 12, and a liquid crystal panel. The alignment film 3 ′ bonded to the counter substrate 12, the liquid crystal layer 2 made of liquid crystal sealed in the gap between the alignment film 3 and the alignment film 3 ′, and the outer surface side (alignment) of the TFT substrate (liquid crystal driving substrate) 9 Bonded to the polarizing film 4 bonded to the surface opposite to the surface facing the film 3 and the outer surface side of the counter substrate 12 for liquid crystal panel (the surface opposite to the surface facing the alignment film 3 ′) And a polarizing film 4 ′.

The liquid crystal layer 2 is mainly composed of liquid crystal molecules.
As the liquid crystal molecules constituting the liquid crystal layer 2, any liquid crystal molecules that can be aligned such as nematic liquid crystal and smectic liquid crystal may be used. However, in the case of a TN type liquid crystal panel, those that form nematic liquid crystal are preferable. For example, phenylcyclohexane derivative liquid crystal, biphenyl derivative liquid crystal, biphenylcyclohexane derivative liquid crystal, terphenyl derivative liquid crystal, phenyl ether derivative liquid crystal, phenyl ester derivative liquid crystal, bicyclohexane derivative liquid crystal, azomethine derivative liquid crystal, azoxy derivative liquid crystal, pyrimidine derivative liquid crystal, dioxane Examples include derivative liquid crystals and cubane derivative liquid crystals. Furthermore, liquid crystal molecules in which a fluorine-based substituent such as a monofluoro group, a difluoro group, a trifluoro group, a trifluoromethyl group, a trifluoromethoxy group, or a difluoromethoxy group is introduced into these nematic liquid crystal molecules are also included.

Alignment films 3 and 3 ′ are disposed on both surfaces of the liquid crystal layer 2. The alignment films 3 and 3 ′ have a function of regulating the alignment state (when no voltage is applied) of the liquid crystal molecules constituting the liquid crystal layer 2.
The alignment films 3 and 3 ′ are usually mainly composed of a polymer material such as polyimide resin, polyamideimide resin, polyvinyl alcohol, polytetrafluoroethylene. Among the polymer materials, polyimide resin and polyamideimide resin are particularly preferable. When the alignment films 3 and 3 ′ are mainly composed of a polyimide resin or a polyamide-imide resin, a polymer film can be easily formed in the manufacturing process, and excellent properties such as heat resistance and chemical resistance can be obtained. It will have.

In addition, as the alignment films 3 and 3 ′, a treatment for imparting an alignment function for restricting the alignment of the liquid crystal molecules constituting the liquid crystal layer 2 is usually applied to the film formed of the material as described above. Things are used. Examples of the treatment method for imparting the alignment function include a rubbing method and a photo-alignment method.
The rubbing method is a method of rubbing (rubbing) the surface of the film in a certain direction using a roller or the like. By performing such treatment, the film has anisotropy in the rubbed direction, and the alignment direction of liquid crystal molecules constituting the liquid crystal layer can be regulated.
The photo-alignment method is a method of selectively reacting only molecules in a specific direction among polymers constituting the film by irradiating light such as linearly polarized ultraviolet light near the surface of the film. By performing such treatment, the film has anisotropy, and the alignment direction of the liquid crystal molecules constituting the liquid crystal layer can be regulated.

  The alignment treatment as described above is usually performed on the surface of the electrode (transparent conductive film 14, pixel electrode 92) formed on the substrate (joint of the microlens substrate 11 and the black matrix 13, TFT substrate 9). After the film made of the material is formed, the film is applied to the film. Examples of the method for forming a film on the electrode include dipping, doctor blade, spin coating, brush coating, spray coating, electrostatic coating, electrodeposition coating, various coating methods such as electrodeposition coating, roll coater, thermal spraying, electrolytic plating, and immersion. Examples include wet plating methods such as plating and electroless plating, chemical vapor deposition methods (CVD) such as vacuum deposition, sputtering, thermal CVD, plasma CVD, and laser CVD, and dry plating methods such as ion plating. The spin coating method is preferred. By using the spin coating method, a uniform and uniform film can be formed easily and reliably.

Such an alignment film preferably has an average thickness of 20 to 120 nm, more preferably 30 to 80 nm.
If the average thickness of the alignment film is less than the lower limit, it may be difficult to impart a sufficient alignment function to the alignment film. On the other hand, when the average thickness of the alignment film exceeds the above upper limit value, the driving voltage becomes high and the power consumption may increase.

The counter substrate 12 for the liquid crystal panel is provided on the microlens substrate 11, the surface layer 114 of the microlens substrate 11, the black matrix 13 in which the opening 131 is formed, and the black matrix 13 on the surface layer 114. A transparent conductive film (common electrode) 14.
The microlens substrate 11 includes a microlens concave substrate (first substrate) 111 provided with a plurality of (many) concave portions (microlens concave portions) 112 having a concave curved surface, and the microlens concave substrate 111. And a surface layer (second substrate) 114 joined via a resin layer (adhesive layer) 115 on the surface provided with the recess 112, and the resin layer 115 fills the recess 112. The microlens 113 is formed by the resin thus formed.

The substrate with concave portions for microlenses 111 is manufactured from a flat base material (transparent substrate), and a plurality of (many) concave portions 112 are formed on the surface thereof. The recess 112 can be formed by, for example, a dry etching method, a wet etching method, or the like using a mask.
The substrate with concave portions for microlenses 111 is made of, for example, glass such as quartz glass, or a plastic material such as polyethylene terephthalate.

It is preferable that the thermal expansion coefficient of the base material is substantially equal to the thermal expansion coefficient of a glass substrate 91 described later (for example, the ratio of the thermal expansion coefficients of the two is about 1/10 to 10). As a result, in the obtained liquid crystal panel, warpage, deflection, peeling, and the like caused by differences in the thermal expansion coefficients of the two when the temperature changes are prevented.
From this viewpoint, it is preferable that the substrate 111 with concave portions for microlenses and the glass substrate 91 are made of the same kind of material. This effectively prevents warpage, deflection, peeling, and the like due to differences in the thermal expansion coefficient when the temperature changes.

  In particular, when the microlens substrate 11 is used for a high-temperature polysilicon TFT liquid crystal panel (HTPS), the substrate 111 with concave portions for microlenses is preferably made of quartz glass. The TFT liquid crystal panel has a TFT substrate as a liquid crystal driving substrate. For such a TFT substrate, quartz glass whose characteristics are unlikely to change depending on the manufacturing environment is preferably used. For this reason, the micro liquid crystal substrate 111 with concave portions for microlenses is made of quartz glass, so that a TFT liquid crystal panel with excellent stability that is less likely to be warped or bent can be obtained.

A resin layer (adhesive layer) 115 that covers the recess 112 is provided on the upper surface of the substrate with recesses 111 for microlenses.
The concave portion 112 is filled with the constituent material of the resin layer 115 to form the microlens 113.
The resin layer 115 can be made of, for example, a resin (adhesive) having a refractive index higher than the refractive index of the constituent material of the substrate 111 with concave portions for microlenses. For example, acrylic resin, epoxy resin, acrylic epoxy It can be suitably configured with an ultraviolet curable resin or the like.

A flat surface layer 114 is provided on the upper surface of the resin layer 115.
The surface layer (glass layer) 114 can be made of glass, for example. In this case, it is preferable that the thermal expansion coefficient of the surface layer 114 is substantially equal to the thermal expansion coefficient of the substrate 111 with concave portions for microlenses (for example, the ratio of the thermal expansion coefficients of the two is about 1/10 to 10). As a result, warpage, deflection, peeling, and the like caused by the difference in thermal expansion coefficient between the substrate 111 with concave portions for microlenses and the surface layer 114 are prevented. Such an effect can be more effectively obtained when the substrate with concave portions for microlenses 111 and the surface layer 114 are made of the same material.

When the microlens substrate 11 is used in a liquid crystal panel, the thickness of the surface layer 114 is usually about 5 to 1000 μm, more preferably about 10 to 150 μm, from the viewpoint of obtaining necessary optical characteristics.
In addition, the surface layer (barrier layer) 114 can also be comprised, for example with ceramics. Examples of ceramics include nitride ceramics such as AlN, SiN, TiN, and BN, oxide ceramics such as Al ₂ O ₃ and TiO ₂ , and carbide ceramics such as WC, TiC, ZrC, and TaC. Can be mentioned. When the surface layer 114 is made of ceramics, the thickness of the surface layer 114 is not particularly limited, but is preferably about 20 nm to 20 μm, and more preferably about 40 nm to 1 μm.
Such a surface layer 114 can be omitted if necessary.

The black matrix 13 has a light blocking function and is made of, for example, a metal such as Cr, Al, Al alloy, Ni, Zn, Ti, or a resin in which carbon, titanium, or the like is dispersed.
The transparent conductive film (electrode) 14 has conductivity, for example, indium tin oxide (ITO), indium oxide (IO), tin oxide (SnO ₂ ), antimontin oxide (ATO), indium zinc oxide (IZO). Etc.

The TFT substrate 9 is a substrate that drives the liquid crystal of the liquid crystal layer 2, and includes a glass substrate 91, a base insulating film 94 provided on the glass substrate 91, a base insulating film 94, and a matrix (matrix). A plurality of (many) pixel electrodes 92 and a plurality of (many) thin film transistors (TFTs) 93 corresponding to the pixel electrodes 92. In FIG. 2, the description of the sealing material, wiring, and the like is omitted.
The glass substrate 91 is preferably made of quartz glass for the reasons described above.

The material of the base insulating film 94 is not particularly limited, for example, SiO _2, TEOS (ethyl silicate), can be used polysilazane, polyimide, a Low-K material or the like. The base insulating film 94 can be formed by applying a liquid insulating material such as SOG (Spin On Glass) having a siloxane bond to the glass substrate 91, firing it, and thermally decomposing it. Thereby, it is not necessary to use an expensive vacuum device or the like, and input energy and time required for film formation can be saved. The liquid insulating material can be applied, for example, by spin coating, dip coating, liquid mist chemical deposition (LSMCD), slit coating, or the like. Also, the liquid insulating material can be applied by a quantitative discharge device such as a printer head of a so-called inkjet printer. By using this quantitative discharge device, it is possible to apply only to a desired portion, so that the material can be saved.

The pixel electrode 92 drives the liquid crystal molecules of the liquid crystal layer 2 (changes the alignment of the liquid crystal) by charging and discharging with the transparent conductive film (common electrode) 14. The pixel electrode 92 is made of the same material as that of the transparent conductive film 14 described above, for example.
The thin film transistor 93 is connected to the corresponding pixel electrode 92 in the vicinity. The thin film transistor 93 is connected to a control circuit (not shown) and controls a current supplied to the pixel electrode 92. Thereby, charging / discharging of the pixel electrode 92 is controlled.

  As shown in FIG. 3, the thin film transistor 93 is provided over the base insulating film 94, a semiconductor layer 9314 including a channel region 9320, a source region 9316, and a drain region 9318, and a gate provided so as to cover the semiconductor layer 9314. An insulating film 9326, an insulating layer 9342, a gate electrode 9351 provided to face the channel region 9320 with the gate insulating film 9326 interposed therebetween, a conductive portion 9356 provided on the insulating layer 9342 above the gate electrode 9351, A conductive portion 9352 provided over the insulating layer 9342 above the source region 9316 and functions as a source electrode, a conductive portion 9354 provided over the insulating layer 9342 above the drain region 9318 and functions as a drain electrode, and a gate electrode (first electrode). 1 conductive portion) 9351 and conductive portion (second conductive portion) 9356 Contact plug 9355 electrically connected, contact plug 9350 electrically connecting source region (first conductive portion) 9316 and conductive portion (second conductive portion) 9352, and drain region (first conductive portion) 9318 And a contact plug 9353 that electrically connects the conductive portion (second conductive portion) 9354.

In this embodiment, a semiconductor layer 9314 is provided on the base insulating film 94. This semiconductor layer 9314 is made of a semiconductor material such as silicon such as polycrystalline silicon or amorphous silicon, germanium, or gallium arsenide.
As described above, the semiconductor layer 9314 includes the channel region 9320, the source region 9316, and the drain region 9318. As illustrated in FIG. 3, the semiconductor layer 9314 has a structure in which a source region 9316 is formed on one side of the channel region 9320 and a drain region 9318 is formed on the other side of the channel region 9320.

  The channel region 9320 is made of, for example, an intrinsic semiconductor material. The source region 9316 and the drain region 9318 are made of a semiconductor material into which an n-type impurity such as phosphorus is introduced (doped), for example. Note that the structure of the semiconductor layer 9314 is not limited to this structure, and the source region 9316 and the drain region 9318 may be formed using a semiconductor material into which a p-type impurity is introduced, for example. The channel region 9320 may be made of a semiconductor material into which a p-type or n-type impurity is introduced, for example.

Such a semiconductor layer 9314 is covered with an insulating film (a gate insulating film 9326 and an insulating layer 9342). In such an insulating film, a portion interposed between the channel region 9320 and the conductive portion 9356 functions as a gate insulating layer serving as a path for an electric field generated between the channel region 9320 and the conductive portion 9356.
The constituent materials of the gate insulating film 9326 and the insulating layer 9342 are not particularly limited. For example, a silicon compound such as SiO ₂ , TEOS (ethyl silicate), or polysilazane can be used. Needless to say, the gate insulating film 9326 and the insulating layer 9342 may be formed of a material other than the above, for example, resin, ceramics, or the like.
A conductive portion 9352, a conductive portion 9354, and a conductive portion 9356 are provided over the insulating layer 9342. As described above, the conductive portion 9356 is formed above the channel region 9320. The conductive portion 9352 is in contact with the source region 9316. The conductive portion 9354 is in contact with the drain region 9318.

  As shown in FIG. 3, a hole (contact hole) communicating with the source region 9316 is formed in a region where the source region 9316 of the gate insulating film 9326 and the insulating layer 9342 is formed. The conductive portion 9352 is in contact with the source region 9316 through this hole. A hole communicating with the drain region 9318 is formed in a region where the drain region 9318 of the gate insulating film 9326 and the insulating layer 9342 is formed. The conductive portion 9354 is in contact with the drain region 9318 through this hole.

  In the liquid crystal panel 100 of the present embodiment, the conductive portion 9354 is in contact with the pixel electrode 92. That is, the conductive portion 9354 is electrically connected to the pixel electrode 92. The plurality of conductive portions 9352 constituting the liquid crystal panel 100 are electrically connected to each other at a portion not shown. Furthermore, the plurality of conductive portions 9356 constituting the liquid crystal panel 100 can be connected to other circuits in parallel.

The conductive portion 9352, the conductive portion 9354, and the conductive portion 9356 include, for example, indium tin oxide (ITO), indium oxide (IO), tin oxide (SnO ₂ ), antimontin oxide (ATO), and indium zinc oxide (IZO). , Al, Al alloy, Cr, Mo, Ta, or other conductive material. Note that a passivation film (not shown) made of a material such as SiO ₂ or SiN may be formed on these conductive portions.

As shown in FIG. 2, a polarizing film (polarizing plate, polarizing film) 4 is disposed on the outer surface side of the TFT substrate (liquid crystal driving substrate) 9 (on the side opposite to the surface facing the alignment film 3). ing. Similarly, a polarizing film (polarizing plate, polarizing film) 4 ′ is disposed on the outer surface side of the counter substrate for liquid crystal panel 12 (the surface side opposite to the surface facing the alignment film 3 ′).
Examples of the constituent material of the polarizing films 4 and 4 ′ include polyvinyl alcohol (PVA). Moreover, as a polarizing film, you may use what doped the said material with iodine.

As a polarizing film, what extended | stretched the film comprised with the said material to the uniaxial direction can be used, for example.
By disposing such polarizing films 4 and 4 ′, the light transmittance can be controlled more reliably by adjusting the amount of energization.
The direction of the polarization axis of the polarizing films 4 and 4 ′ is usually determined according to the alignment direction of the alignment films 3 and 3 ′.
In such a liquid crystal panel 100, normally, one micro lens 113, one opening 131 of the black matrix 13 corresponding to the optical axis Q of the micro lens 113, one pixel electrode 92, and such a pixel. One thin film transistor 93 connected to the electrode 92 corresponds to one pixel.

  Incident light L incident from the liquid crystal panel counter substrate 12 side passes through the microlens concave substrate 111 and is condensed when passing through the microlens 113, while opening the resin layer 115, the surface layer 114, and the black matrix 13. 131, the transparent conductive film 14, the liquid crystal layer 2, the pixel electrode 92, and the glass substrate 91 are transmitted. At this time, since the polarizing film 4 ′ is provided on the incident side of the microlens substrate 11, the incident light L is linearly polarized when the incident light L passes through the liquid crystal layer 2. At this time, the polarization direction of the incident light L is controlled in accordance with the alignment state of the liquid crystal molecules in the liquid crystal layer 2. Therefore, the luminance of the emitted light can be controlled by transmitting the incident light L transmitted through the liquid crystal panel 100 to the polarizing film 4.

  Thus, the liquid crystal panel 100 includes the microlens 113, and the incident light L that has passed through the microlens 113 is condensed and passes through the openings 131 of the black matrix 13. On the other hand, the incident light L is shielded in a portion where the opening 131 of the black matrix 13 is not formed. Therefore, in the liquid crystal panel 100, unnecessary light is prevented from leaking from portions other than the pixels, and attenuation of the incident light L at the pixel portions is suppressed. For this reason, the liquid crystal panel 100 has high light transmittance in the pixel portion.

  In the liquid crystal panel 100, for example, alignment films 3 and 3 ′ are bonded to a TFT substrate 9 and a liquid crystal panel counter substrate 12 manufactured by a method described later, respectively, and then a sealing material (not shown). ), And then, the liquid crystal is injected into the gap from the gap hole (not shown) formed thereby, and then the hole is closed.

Next, an example of a specific method for forming the thin film transistor 93 by applying the method of the present invention will be described.
4 to 7 are sectional views showing a preferred embodiment of a method for forming a thin film transistor. In the following description, the upper side of FIGS. 4 to 7 will be described as “upper”, and the lower side of FIGS. 4 to 7 will be described as “lower”.

  First, a semiconductor layer (polycrystalline silicon film) 9314 is formed on the base insulating film 94. This semiconductor layer 9314 can be formed as follows. First, a liquid repellent film such as a fluororesin film is formed on the base insulating film 94. Then, the element forming region of the liquid repellent film is irradiated with ultraviolet rays or the like, and the liquid repellent film in the element forming region is decomposed and removed to be patterned to obtain a mask (pattern shape control mask) 6A (4a). Thereafter, liquid silicon hydride (film forming liquid) is applied to the element formation region and dried. Next, the dried silicon hydride film is baked and thermally decomposed into an amorphous silicon film 9314 '(4b). Further, the mask (liquid repellent bank) 6A is decomposed and removed by irradiating the entire glass substrate 91 with ultraviolet rays, and then the amorphous silicon film 9314 ′ is annealed by irradiating an excimer laser such as XeCl, thereby the amorphous silicon film 9314 'Is polycrystallized to form a semiconductor layer (polycrystalline silicon film) 9314 (4c).

Thereafter, channel doping of the semiconductor layer (polycrystalline silicon film) 9314 is performed. That is, appropriate impurities (for example, PH ₃ ions when forming an n-type conductive layer) are implanted and diffused over the entire surface. This semiconductor layer (polycrystalline silicon film) 9314 becomes the first conductive portion. Next, a photoresist that is a liquid organic material is applied so as to cover the semiconductor layer (polycrystalline silicon film) 9314. Then, the applied photoresist is dried (prebaked) at a temperature of 70 to 90 ° C., and a resist film (mask material film) 9322 is formed as shown by a two-dot chain line in FIG. The liquid organic material may be a photosensitive resin (for example, polyimide). In addition, the liquid organic material can be applied by spin coating, dip coating, LSMCD, slit coating, and application by a quantitative discharge device, similarly to the application of the liquid insulating material.

  Next, the resist film 9322 is exposed and developed by a photolithography method, and contact holes are formed over the regions to be the source region 9316 and the drain region 9318 of the semiconductor layer (polycrystalline silicon film) 9314 to be the first conductive portion. The resist film 9322 is left only in the region, and a liquid repellent treatment as described above is performed to form a mask (pattern shape control mask) 6B (4d). The liquid repellent treatment is performed, for example, by decomposing a gas containing fluorine atoms such as carbon tetrafluoride by atmospheric pressure plasma to generate active fluorine single atoms or ions, and exposing the mask 6B to the active fluorine. be able to. When the mask 6B is formed of a liquid repellent photoresist containing fluorine atoms, the liquid repellent treatment of the mask 6B is not necessary. The mask 6B is formed to have a height equal to or greater than the thickness of the gate insulating film 9326 shown in FIG. Alternatively, the gate insulating film 9326 may be formed higher than the coating thickness of the liquid film forming material. The mask 6B is subjected to a curing process as necessary. In the embodiment, the mask 6B is cured as follows.

  First, the glass substrate 91 on which the mask 6B is formed is carried into a vacuum chamber (not shown), and the inside of the vacuum chamber is depressurized to 1333 kPa (10 Torr) or less, for example. Then, the mask 6B is heated to a predetermined temperature, for example, a normal photoresist post-bake temperature of about 100 to 130 ° C., and the mask 6B is irradiated with ultraviolet rays. Thereby, in the mask 6B, the dissolved water is dehydrated and the crosslinking reaction is accelerated by the ultraviolet rays. In addition, since the mask 6B is dehydrated and not affected by moisture, the crosslinking reaction proceeds and becomes dense, improving heat resistance and chemical resistance. Furthermore, the hardening process of the mask 6B performs the heat processing which heats the mask 6B more than post-baking temperature as needed. This heat treatment is performed, for example, at a temperature of 300 ° C. to 450 ° C. for about 10 minutes. As a result, it is possible to obtain a mask with extremely excellent heat resistance and chemical resistance, and various liquid film forming materials (film forming liquids) can be used.

  Thereafter, a gate insulating film 9326 is formed on the semiconductor layer 9314 excluding the region covered with the mask 6B and on the base insulating layer 94 (4e). This gate insulating film 9326 can be formed in a manner similar to that of the base insulating film 94. Then, the mask 6B is removed by ashing, and first contact holes 9328 and 9329 penetrating the gate insulating film 9326 are formed (5a). The ashing of the mask 6B can be performed by oxygen plasma or ozone vapor under atmospheric pressure or reduced pressure.

  Next, a liquid repellent film (not shown) is formed so as to cover the gate insulating film 9326. Further, the liquid repellent film is irradiated with ultraviolet rays through a mask to form a gate electrode trench 9332 at a position corresponding to the channel region 9320, thereby forming a mask (pattern shape control mask) 6C having an opening (5b). . Then, a liquid pattern material (liquid for film formation) containing an organometallic compound as a main component is supplied to the gate electrode trench 9332, and this is heat-treated to form the gate electrode 9351 (5c). Thereafter, the mask 6C is irradiated with ultraviolet rays, and the mask 6C is disassembled and removed (5d).

  The liquid pattern material may be supplied to the gate electrode trench 9332 by LSMCD, spin coating, slit coating, or the like. For example, the liquid pattern material is selectively applied to the gate electrode trench 9332 by a quantitative discharge device such as a printer head of an inkjet printer. May be supplied. Thereby, the liquid pattern material can be saved, the liquid pattern material can be prevented from adhering to the periphery of the trench, and the gate electrode 9351 having a desired thickness can be easily formed. The gate electrode 9351 becomes a first conductive portion together with the semiconductor layer 9314 (source region 9316 and drain region 9318).

Next, using the gate electrode 9351 as a mask, appropriate impurities (for example, B ₂ H ₆ ions when a p-type conductive layer is formed) are implanted into the source region 9316 and the drain region 9318. Thereby, the TFT element in which the lower portion of the gate electrode 9351 becomes the channel region 9320 is completed (5e). Thereafter, a resist film 9336 as a mask material is formed on the gate insulating film 9326 (6a). Further, the resist film 9336 is exposed and developed by using a photolithography method, and the resist film 9336 is formed at positions corresponding to the first contact holes 9328 and 9329 serving as contact hole formation regions and at predetermined positions on the gate electrode 9351. A mask (pattern shape control mask) 6D is formed (6b). Among these masks 6D, those at positions corresponding to the source region 9316 of the semiconductor layer (polycrystalline silicon film) 9314 are in contact with the upper surface of the source region 9316 through the first contact hole 9328. Similarly, in the mask 6D, the one corresponding to the drain region 9318 of the semiconductor layer (polycrystalline silicon film) 9314 is in contact with the upper surface of the drain region 9318 through the first contact hole 9329. The mask 6D is subjected to a curing process as described above as necessary.

  Further, the mask 6D may be formed so that the portion above the gate insulating film 9326 is larger than the first contact hole 9328, as shown on the right side of FIG. 6 (6b). As a result, a step is formed in the contact hole formed by removing the mask 6D as described later (see FIG. 6C), and the step coverage of the contact hole is improved and disconnection in the contact hole can be prevented. .

  Next, an insulating layer 9342 made of silicon dioxide or the like is formed on the gate insulating film 9326 and the gate electrode 9351 excluding the region covered with the mask 6D (6c). Similar to the base insulating film 94 and the like, the insulating layer 9342 can be formed by applying a liquid insulating material (film forming liquid) by LSMCD, spin coating, slit coating, or the like, and heat-treating it. Accordingly, the surface of the insulating layer 9342 to be formed can be made flatter. Thereafter, the mask 6D is removed by ashing, and second contact holes 9344, 9345, and 9346 are formed in the insulating layer 9342 (6d). Thus, the second contact hole 9344 communicates with the first contact hole 9328, and the second contact hole 9345 communicates with the first contact hole 9329.

  Next, a liquid contact forming material containing an organometallic compound as a main component is supplied into the first contact holes 9328 and 9329 and the second contact holes 9344, 9345, and 9346 using a quantitative discharge device (not shown). Thereafter, the liquid contact forming material in the contact holes (first contact holes 9328 and 9329 and second contact holes 9344, 9345 and 9346) is baked and solidified. Thus, a contact plug 9350 connected to the source region 9316, a contact plug 9353 connected to the drain region 9318, and a contact plug 9355 connected to the channel region 9320 are formed (6e). After forming the second contact holes 9344, 9345, 9346, that is, after penetrating the second contact hole 9344 and the first contact hole 9328, and the second contact hole 9345 and the first contact hole 9329, respectively, the entire substrate The contact plug formation region of the source region 9316, the drain region 9318, and the gate electrode 9351 to be the first conductive portion may be subjected to lyophilic treatment. By performing such a lyophilic treatment, the adhesion and bondability with the contact plug can be improved and the electrical resistance can be reduced.

Further, a liquid repellent film 9348 is formed covering the insulating layer 9342 (7a). Then, the liquid repellent film 9348 is irradiated with ultraviolet rays through a mask (not shown) to form a mask (pattern shape control mask) 6E having a conductive portion groove (wiring groove) 9357 as an opening (7b). Thereafter, for example, a liquid wiring material (film forming liquid) in which ITO constituting the transparent conductive film is dissolved or dispersed is supplied to the conductive portion groove (wiring groove) 9357 using a quantitative discharge device. Conductive portions (second conductive portions) 9352, 9354, 9356 are formed by heat treatment (7c). Thus, the source region (first conductive portion) 9316 is electrically connected to the conductive portion (second conductive portion) 9352 via the contact plug 9350, and the drain region (first conductive portion) 9318 is connected to the contact plug 9353. The gate electrode (first conductive portion) 9351 is electrically connected to the conductive portion (second conductive portion) 9356 via the contact plug 9355. Is done. Note that the conductive portion 9354 is connected to the pixel electrode 92.
Further, the mask 6E is irradiated with ultraviolet rays to decompose and remove the mask 6E (7d). Thereafter, a passivation film (not shown) made of silicon dioxide, silicon nitride (SiN), or the like is formed so as to cover the conductive portions 9352, 9354, and 9356.

Thus, in the present embodiment, the thin film transistor 93 is formed by applying the thin film pattern forming method of the present invention as described above. A thin film transistor generally has a structure in which relatively thin films (thin films) are stacked in a fine pattern, and the method of the present invention is particularly suitable for forming a structure having such a structure. Yes.
Further, by applying the present invention to the manufacture of a semiconductor device (semiconductor element) having a film with a fine shape and pattern, such as a thin film transistor constituting a liquid crystal panel, for example, an alignment film is formed on the thin film transistor and the pixel electrode. The occurrence of peeling or floating of the alignment film due to catching or the like during the rubbing process (when the rubbing treatment is performed) can be suitably prevented.

  Note that the masks 6A, 6B, 6C, 6D, and 6E can be the same as the mask 6 in the embodiment described with reference to FIG. Further, the masks 6A, 6B, 6C, 6D, and 6E may be substantially the same or different from each other. Further, the masks 6A, 6B, 6C, 6D, and 6E may have a base portion and a surface layer as in the mask 6 in the embodiment described with reference to FIG. It may be composed of a uniform material.

  In this embodiment, a contact hole is formed by providing a mask pillar at the contact hole formation position, and then forming an insulating film around the mask pillar and removing the mask pillar. That is, in the present embodiment, the method includes a step of forming a contact hole that electrically connects the first conductive portion and the second conductive portion provided via the insulating film, and the contact hole on the first conductive portion is formed. A mask forming step of providing a mask (pattern shape control mask) in a forming region; an insulating film forming step of forming an insulating film on substantially the entire surface of the substrate excluding the region where the mask is formed; The thin film transistor is formed by a method including a mask removing step of forming a through hole in the insulating film. Therefore, in this embodiment, a contact hole can be formed without etching the insulating film, an expensive vacuum apparatus is not required, the number of processes can be reduced, and the process can be simplified. Further, the contact hole can be formed quickly, and the labor and energy for forming the contact hole can be saved, and the cost of the electronic device can be reduced. In addition, in this embodiment, the contact hole is formed by removing the mask 6D, and the liquid plug forming material is supplied only to the contact hole, so that the amount of the contact plug forming material used is greatly reduced. be able to.

Next, a projection type display device (liquid crystal projector) using the liquid crystal panel 100 will be described as an example of the electronic apparatus of the present invention.
FIG. 8 is a diagram schematically showing an optical system of the electronic apparatus (projection display device) of the present invention.
As shown in the figure, the projection display apparatus 300 includes a light source 301, an illumination optical system including a plurality of integrator lenses, a color separation optical system (light guide optical system) including a plurality of dichroic mirrors, and the like. A liquid crystal light valve (liquid crystal optical shutter array) 24 corresponding to red (liquid crystal optical shutter array) 24 corresponding to red, a liquid crystal light valve (liquid crystal optical shutter array) 25 corresponding to green (liquid crystal optical shutter array) 25, and a liquid crystal light valve corresponding to blue (for blue) ) A liquid crystal light valve (liquid crystal light shutter array) 26, a dichroic prism (color combining optical system) 21 formed with a dichroic mirror surface 211 reflecting only red light and a dichroic mirror surface 212 reflecting only blue light, and projection And a lens (projection optical system) 22.

  The illumination optical system includes integrator lenses 302 and 303. The color separation optical system includes mirrors 304, 306, and 309, a dichroic mirror 305 that reflects blue light and green light (transmits only red light), a dichroic mirror 307 that reflects only green light, and a dichroic that reflects only blue light. A mirror (or a mirror that reflects blue light) 308 and condenser lenses 310, 311, 312, 313, and 314 are included.

The liquid crystal light valve 25 includes the liquid crystal panel 100 described above. The liquid crystal light valves 24 and 26 have the same configuration as the liquid crystal light valve 25. The liquid crystal panels 100 included in the liquid crystal light valves 24, 25, and 26 are connected to driving circuits (not shown).
In the projection display device 300, the dichroic prism 21 and the projection lens 22 constitute the optical block 20. The optical block 20 and liquid crystal light valves 24, 25 and 26 fixedly installed on the dichroic prism 21 constitute a display unit 23.

Hereinafter, the operation of the projection display apparatus 300 will be described.
White light (white light beam) emitted from the light source 301 passes through the integrator lenses 302 and 303. The light intensity (luminance distribution) of the white light is made uniform by the integrator lenses 302 and 303. The white light emitted from the light source 301 preferably has a relatively high light intensity. Thereby, the image formed on the screen 320 can be made clearer.

White light transmitted through the integrator lenses 302 and 303 is reflected to the left side in FIG. 8 by the mirror 304, and blue light (B) and green light (G) of the reflected light are respectively reflected by the dichroic mirror 305 in FIG. The red light (R) is reflected downward and passes through the dichroic mirror 305.
The red light transmitted through the dichroic mirror 305 is reflected downward in FIG. 8 by the mirror 306, and the reflected light is shaped by the condenser lens 310 and enters the liquid crystal light valve 24 for red.
Green light of blue light and green light reflected by the dichroic mirror 305 is reflected to the left in FIG. 8 by the dichroic mirror 307, and the blue light passes through the dichroic mirror 307.

The green light reflected by the dichroic mirror 307 is shaped by the condenser lens 311 and enters the green liquid crystal light valve 25.
Further, the blue light transmitted through the dichroic mirror 307 is reflected on the left side in FIG. 8 by the dichroic mirror (or mirror) 308, and the reflected light is reflected on the upper side in FIG. 8 by the mirror 309. The blue light is shaped by the condenser lenses 312, 313, and 314, and enters the liquid crystal light valve 26 for blue.
As described above, the white light emitted from the light source 301 is separated into the three primary colors of red, green, and blue by the color separation optical system, and is guided to the corresponding liquid crystal light valve and enters.

At this time, each pixel (the thin film transistor 93 and the pixel electrode 92 connected thereto) of the liquid crystal panel 100 included in the liquid crystal light valve 24 is subjected to switching control by a driving circuit (driving means) that operates based on a red image signal. (On / off), ie modulated.
Similarly, green light and blue light are incident on the liquid crystal light valves 25 and 26, respectively, and modulated by the respective liquid crystal panels 100, thereby forming a green image and a blue image. At this time, each pixel of the liquid crystal panel 100 included in the liquid crystal light valve 25 is switching-controlled by a drive circuit that operates based on a green image signal, and each pixel of the liquid crystal panel 100 included in the liquid crystal light valve 26 is used for blue color. Switching control is performed by a drive circuit that operates based on the image signal.
As a result, red light, green light, and blue light are modulated by the liquid crystal light valves 24, 25, and 26, respectively, and a red image, a green image, and a blue image are formed, respectively.

The red image formed by the liquid crystal light valve 24, that is, the red light from the liquid crystal light valve 24, enters the dichroic prism 21 from the surface 213, is reflected by the dichroic mirror surface 211 to the left in FIG. The light passes through the surface 212 and exits from the exit surface 216.
Further, the green image formed by the liquid crystal light valve 25, that is, the green light from the liquid crystal light valve 25, enters the dichroic prism 21 from the surface 214, passes through the dichroic mirror surfaces 211 and 212, and exits. The light exits from the surface 216.
Further, the blue image formed by the liquid crystal light valve 26, that is, the blue light from the liquid crystal light valve 26 is incident on the dichroic prism 21 from the surface 215, and is reflected by the dichroic mirror surface 212 to the left in FIG. The light passes through the dichroic mirror surface 211 and exits from the exit surface 216.

  Thus, the light of each color from the liquid crystal light valves 24, 25 and 26, that is, the images formed by the liquid crystal light valves 24, 25 and 26 are synthesized by the dichroic prism 21, thereby forming a color image. Is done. This image is projected (enlarged projection) on the screen 320 installed at a predetermined position by the projection lens 22.

As described above, the thin film pattern forming method, the film, the electronic device, the liquid crystal panel, and the electronic apparatus of the present invention have been described based on the illustrated embodiments, but the present invention is not limited to these.
For example, in the above-described embodiment, the method of forming a film constituting the thin film transistor has been described. However, the method of the present invention is not limited to this, and may be applied to any thin film pattern forming method. For example, the method of the present invention may be applied to the formation of the pixel electrode or the black matrix as described above.

In the above-described embodiment, the configuration using the TFT substrate as the liquid crystal drive substrate constituting the liquid crystal panel has been described. However, the liquid crystal drive substrate is a liquid crystal drive substrate other than the TFT substrate, such as a TFD substrate, an STN substrate, or the like. May be used.
Further, the method of the present invention is not limited to the one applied to the manufacture of the electronic device as described above, and may be applied to the manufacture of a decorative article, for example.

In the above-described embodiment, the mask surface layer is described as being formed to improve the liquid repellency of the mask. However, in the present invention, the surface layer is formed for such a purpose. For example, it may be formed for the purpose of improving the strength of the mask.
In the above-described embodiment, the projection display device (electronic device) has three liquid crystal panels, and the liquid crystal panel of the present invention is applied to all of them, but at least these One of them may be the liquid crystal panel of the present invention.

[Production of TFT substrate]
A TFT substrate constituting a liquid crystal panel as shown in FIGS. 2 and 3 was manufactured as follows.
(Example 1)
First, a glass substrate 91 made of quartz glass was prepared, and a liquid insulating material composed of SOG was applied to the surface of the glass substrate 91 by spin coating, and then baked to form a base insulating layer 94. .

Next, the TFT substrate 9 was obtained by forming the thin film transistor 93 on the surface of the base insulating layer 94 according to the method in the embodiment described with reference to FIGS.
The mask 6A is formed by forming a liquid-repellent film made of a fluorine-based resin, irradiating an element formation region of the liquid-repellent film with ultraviolet rays, and disassembling and removing the liquid-repellent film in the element formation region. Was used. The mask 6A had a thickness of 0.5 μm and had a contact angle of 95 ° with liquid silicon hydride (material for forming the semiconductor film 9314, liquid for forming the film).

  Further, as the mask 6B, a surface layer is formed by subjecting the i-line photoresist made of novolak resin to drying, exposure, and development, and then exposing to active fluorine (liquid repellent treatment). Furthermore, after that, in a vacuum chamber of 10 Torr or less, a material which was heated to 100 to 130 ° C. and subjected to a curing treatment to irradiate ultraviolet rays was used. The mask 6B had a thickness of 0.5 μm and had a contact angle of 93 ° with a liquid insulating material composed of polysilazane (a material for forming a gate insulating film 9326, a liquid for forming a film).

  The mask 6C is formed by forming a liquid repellent film made of a fluorine-based resin, irradiating the element forming area of the liquid repellent film with ultraviolet rays, and decomposing and removing the liquid repellent film in the element forming area. What was done was used. The film thickness was 0.8 μm, and the contact angle with a liquid pattern material (a material for forming a gate electrode 9351, a liquid for forming a film) mainly containing liquid silicon hydride was 95 °.

  Further, as the mask 6D, a surface layer is formed by subjecting an i-line photoresist composed of novolak resin to drying, exposure, and development, and then exposure to active fluorine (liquid repellent treatment). Furthermore, after that, in a vacuum chamber of 10 Torr or less, a material which was heated to 100 to 130 ° C. and subjected to a curing treatment to irradiate ultraviolet rays was used. The mask 6D had a thickness of 1.0 μm and had a contact angle of 93 ° with a liquid insulating material composed of polysilazane (insulating layer 9342 forming material, film forming liquid).

Further, as the mask 6E, a surface layer is formed by subjecting an i-line photoresist composed of novolak resin to drying, exposure, and development, and then exposure to active fluorine (liquid repellent treatment). Furthermore, after that, in a vacuum chamber of 10 Torr or less, a material which was heated to 100 to 130 ° C. and subjected to a curing treatment to irradiate ultraviolet rays was used. The mask 6E has a film thickness of 0.5 μm and has a contact angle with a liquid wiring material (a solution containing ITO and water, a material for forming conductive portions 9352, 9354, and 9356, a liquid for forming a film). It was 110 °.
In the TFT substrate 9 obtained in this way, the film formed by the method using the mask has a substantially flat shape (a meniscus shape in which the vicinity of the edge protrudes is effectively prevented). Was).

(Comparative Example 1)
The masks 6A, 6B, 6C, 6D, and 6E are the same as those in Example 1 except that the masks 6A, 6B, 6C, 6D, and 6E are made of materials that have a contact angle with the film-forming liquid of less than 90 °. A TFT substrate was manufactured.
More specifically, as the mask 6A, the i-line photoresist composed of novolak resin is subjected to drying, exposure, and development treatments, and then is performed at 100 to 130 ° C. in a vacuum chamber of 10 Torr or less. A material that was heated and cured by irradiating with ultraviolet rays was used. The contact angle between the mask 6A and liquid silicon hydride (a material for forming the semiconductor film 9314, a liquid for forming the film) was 31 °.

  As the mask 6B, the i-line photoresist made of novolak resin is subjected to drying, exposure, and development, and then heated to 100 to 130 ° C. in a vacuum chamber of 10 Torr or less. The thing which performed the hardening process which irradiates an ultraviolet-ray was used. Further, the contact angle between the mask 6B and the liquid insulating material composed of SOG (the material for forming the gate insulating film 9326, the liquid for forming the film) was 28 °.

  As the mask 6C, the i-line photoresist made of novolak resin is subjected to drying, exposure, and development processes, and then heated to 100 to 130 ° C. in a vacuum chamber of 10 Torr or less. The thing which performed the hardening process which irradiates an ultraviolet-ray was used. Further, the contact angle between the mask 6C and the liquid pattern material containing liquid silicon hydride as a main component (the material for forming the gate electrode 9351, the liquid for forming the film) was 31 °.

  As the mask 6D, the i-line photoresist composed of novolak resin is dried, exposed, and developed, and then heated to 100 to 130 ° C. in a vacuum chamber of 10 Torr or less. The thing which performed the hardening process which irradiates an ultraviolet-ray was used. The contact angle between the mask 6D and the liquid insulating material (material for forming the insulating layer 9342, liquid for forming the film) made of SOG was 28 °.

As the mask 6E, the i-line photoresist composed of novolak resin is dried, exposed, and developed, and then heated to 100 to 130 ° C. in a vacuum chamber of 10 Torr or less. The thing which performed the hardening process which irradiates an ultraviolet-ray was used. The contact angle between the mask 6E and the liquid wiring material (a solution containing ITO and water, a material for forming the conductive portions 9352, 9354, and 9356, and a liquid for forming the film) was 63 °.
The TFT substrate 9 thus obtained had a meniscus shape in which the vicinity of the edge of the film (particularly, the conductive portions 9352, 9354, 9356) formed by a method using a mask was projected.

[Coating of alignment film, manufacturing of liquid crystal panel]
A N-methylpyrrolidone solution of polyimide is applied to the surface of the TFT substrate prepared in Example 1 and Comparative Example 1 (the surface on which the thin film transistor is formed) by spin coating, and then dried (removal of the solvent). Further, the alignment film 3 ′ was formed by subjecting the formed film to rubbing treatment.

As a result, an alignment film could be suitably formed on the TFT substrate prepared in Example 1. On the other hand, in the TFT substrate of Comparative Example 1, when the rubbing treatment was performed, the film (alignment film, interlayer insulating film, electrode film) from the TFT substrate was likely to be lifted or peeled off.
Thereafter, the TFT substrate 9 on which the alignment film 3 ′ obtained as described above was laminated and the counter substrate 12 for a liquid crystal panel on which the separately prepared alignment film 3 was laminated were bonded via a sealing material. This bonding was performed such that the alignment direction of the alignment film was shifted by 90 ° so that the liquid crystal molecules constituting the liquid crystal layer 2 were twisted to the left.

Next, liquid crystal (Merck Corp .: MJ99247) was injected into the gap from the gap hole formed between the alignment film 3 'and the alignment film 3, and then the hole was closed. The thickness of the formed liquid crystal layer 2 was about 3 μm.
Thereafter, the polarizing film 4 ′ and the polarizing film 4 are bonded to the outer surface side of the counter substrate 12 for the liquid crystal panel and the outer surface side of the TFT substrate 9, respectively, so that the TFT liquid crystal having a structure as shown in FIG. Panel 100 was manufactured. As the polarizing film, a film made of polyvinyl alcohol (PVA) and stretched in a uniaxial direction was used. The bonding directions of the polarizing film 4 and the polarizing film 4 ′ were determined based on the alignment directions of the alignment film 3 and 3 ′, respectively. That is, the polarizing film 4 and the polarizing film 4 ′ are bonded so that the incident light is not transmitted when a voltage is applied and the incident light is transmitted when no voltage is applied.
When a liquid crystal panel was manufactured by the method as described above, Example 1 in which the TFT substrate was manufactured by applying the method of the present invention improved the product yield by 65% compared with Comparative Example 1.

[Evaluation of projection display device]
A projection type display device (liquid crystal projector) as shown in FIG. 8 was produced using the liquid crystal panel obtained as described above.
As a result of evaluating the displayed image for each projection display device, the projection display device including the TFT substrate manufactured in Example 1 was able to display a clear and excellent contrast image. On the other hand, in the projection type display device provided with the TFT substrate produced in Comparative Example 1, occurrence of dot omission and color unevenness was clearly recognized.

It is sectional drawing which shows suitable embodiment of the thin film pattern formation method of this invention. It is a typical longitudinal section showing a suitable embodiment of a liquid crystal panel of the present invention. FIG. 3 is an enlarged sectional view of the vicinity of a thin film transistor of the liquid crystal panel shown in FIG. 2. It is sectional drawing which shows suitable embodiment of the formation method of a thin-film transistor. It is sectional drawing which shows suitable embodiment of the formation method of a thin-film transistor. It is sectional drawing which shows suitable embodiment of the formation method of a thin-film transistor. It is sectional drawing which shows suitable embodiment of the formation method of a thin-film transistor. It is a figure which shows typically the optical system of the electronic device (projection type display apparatus) of this invention. It is sectional drawing for demonstrating the shape of the film | membrane formed by the conventional method.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 100 ... Liquid crystal panel 2 ... Liquid crystal layer 3, 3 '... Orientation film 4, 4' ... Polarizing film 5 ... Base material 6, 6A, 6B, 6C, 6D, 6E ... Mask 61 ... Base 62 ... Surface layer 7 ... Liquid 8 ... Film 8 '... Film 81' ... Edge 9 ... TFT substrate 91 ... Glass substrate 92 ... Pixel electrode 93 ... Thin film transistor 9314 ... Semiconductor layer (polycrystal) Silicon film) 9314 ′ …… Amorphous silicon film 9316 …… Source region 9318 …… Drain region 9320 …… Channel region 9322 …… Resist film 9326 …… Gate insulating film 9328 …… First contact hole 9329 …… First contact hole 9330: Liquid repellent film 9332: Trench for gate electrode 9336: Resist film 9342: Insulating layer 9344: Second layer Contact hole 9345 …… Second contact hole 9346 …… Second contact hole 9348 …… Liquid repellent film 9350 …… Contact plug 9351 …… Gate electrode (first conductive portion) 9352 …… Conductive portion (second conductive portion) 9353 …… Contact plug 9354 …… Conducting portion (second conducting portion) 9355 …… Contact plug 9356 …… Conducting portion (second conducting portion) 9357 …… Conducting portion groove (wiring trench) 94 …… Underlying insulating film 11… … Microlens substrate 111 …… Substrate with concave portion for microlens 112 …… Concavity 113 …… Microlens 114 …… Surface layer 115 …… Resin layer 12 …… Counter substrate for liquid crystal panel 13 …… Black matrix 131 …… Opening 14… ... Transparent conductive film 300 ... Projection type display device 301 ... Light source 302, 30 …… Integrator lenses 304, 306, 309 …… Mirrors 305, 307, 308 …… Dichroic mirrors 310 to 314 …… Condensing lens 320 …… Screen 20 …… Optical block 21 …… Dichroic prism 211, 212 …… Dichroic mirror Surface 213 to 215 …… Surface 216 …… Exit surface 22 …… Projection lens 23 …… Display unit 24 to 26 …… Liquid crystal light valve

Claims (20)

A thin film pattern forming method having a liquid application step of applying a liquid for film formation on a substrate coated with a mask,
In the liquid application step, the thin film pattern forming method is characterized in that the film is formed such that a contact angle of the liquid with respect to the inner surface of the opening of the mask is 90 ° or more.   The thin film pattern forming method according to claim 1, wherein an atmospheric temperature in the liquid application step is 0 to 400 ° C.   The thin film pattern forming method according to claim 1, wherein the mask has a surface free energy of 20 mN / m or less at a portion in contact with the liquid.   The thin film pattern forming method according to claim 1, wherein the mask is subjected to a liquid repellent treatment.   The thin film pattern forming method according to claim 1, wherein the mask has a base and a surface layer provided on a surface side of the base.   6. The thin film pattern forming method according to claim 5, wherein the surface layer is mainly composed of a fluorine-containing compound and / or a silicon-based compound.   The thin film pattern forming method according to claim 5, wherein the surface layer is formed by plasma polymerization.   The thin film pattern forming method according to claim 5, wherein the surface layer is formed by a vapor deposition method.   The thin film pattern forming method according to claim 5, wherein the surface layer is formed by a coating method.   The thin film pattern forming method according to any one of claims 1 to 9, wherein the liquid is a solution, and the solvent constituting the solution has a surface tension of 50 mN / m or more.   The thin film pattern forming method according to claim 10, wherein the solvent is water.   A film obtained by the method according to claim 1.   An electronic device comprising the film according to claim 12.   A liquid crystal panel comprising the film according to claim 12.   The liquid crystal panel according to claim 14, wherein the film functions as an electrode.   The liquid crystal panel according to claim 14, wherein the film functions as an insulating film.   An electronic apparatus comprising the film according to claim 12.   An electronic apparatus comprising the liquid crystal panel according to claim 14.   An electronic apparatus comprising a light valve comprising the liquid crystal panel according to claim 14 and projecting an image using at least one light valve. Three light valves corresponding to red, green, and blue forming an image, a light source, and a color that separates light from the light source into red, green, and blue light and guides each light to the corresponding light valve An electronic apparatus having a separation optical system, a color synthesis optical system that synthesizes the images, and a projection optical system that projects the synthesized image,
An electronic apparatus comprising the liquid crystal panel according to any one of claims 14 to 16.

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