JP2004349630A - Semiconductor device and its manufacturing method, circuit board, and electronic equipment - Google Patents

Abstract

An object of the present invention is to increase the degree of freedom in forming a wiring.
A semiconductor device includes a semiconductor substrate having a plurality of electrodes, a plurality of lands, and a plurality of wirings for electrically connecting the plurality of electrodes to the plurality of lands. The plurality of lands 20 include long lands 22 having a shape elongated along the longitudinal direction of any of the wirings 26.
[Selection diagram] Fig. 1

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device and a method for manufacturing the same, a circuit board, and an electronic device.
[0002]
[Prior art]
[0003]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 2000-100851
BACKGROUND OF THE INVENTION
Conventionally, a semiconductor device in which external terminals (for example, solder balls) are provided on lands is known. The lands are electrically connected to electrodes of the semiconductor chip by wiring. When the wiring is formed so as to pass between the lands, the area where the wiring is formed is limited by the pitch of the lands.
[0005]
An object of the present invention is to increase the degree of freedom in forming a wiring.
[0006]
[Means for Solving the Problems]
(1) A semiconductor device according to the present invention includes: a semiconductor substrate having a plurality of electrodes;
With multiple lands,
A plurality of wirings for electrically connecting the plurality of electrodes and the plurality of lands,
Has,
The plurality of lands include an elongated land having a shape elongated in a longitudinal direction of any of the wirings. According to the present invention, since the long land is elongated along the longitudinal direction of one of the wirings, the degree of freedom in forming the wiring can be increased.
(2) In this semiconductor device,
The plurality of lands includes a pair of the elongated lands,
At least one of the wires is disposed between the pair of elongated lands;
The pair of elongated lands may be arranged so as to be longer along a longitudinal direction of the at least one wiring.
(3) In this semiconductor device,
Two or more of the wirings are arranged between the pair of elongated lands,
The pair of elongated lands may be arranged so as to be longer in the longitudinal direction of the two or more wires.
(4) In this semiconductor device,
The plurality of lands further include equal-shaped lands having the same length in any of two orthogonal axes,
The uniform land and the long land may have the same area.
(5) A circuit board according to the present invention has the above-described semiconductor device mounted thereon.
(6) An electronic apparatus according to the present invention includes the above-described semiconductor device.
(7) A method for manufacturing a semiconductor device according to the present invention includes forming a resin layer on a semiconductor substrate having a plurality of electrodes;
Forming a plurality of lands and a plurality of wirings for electrically connecting the plurality of electrodes and the plurality of lands to the resin layer;
Including
The plurality of lands are formed so as to include an elongated land having a shape elongated in a longitudinal direction of any of the wirings. According to the present invention, since the long land is elongated along the longitudinal direction of one of the wirings, the degree of freedom in forming the wiring can be increased.
[0007]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0008]
FIG. 1 is a plan view illustrating a semiconductor device according to an embodiment of the present invention (part of components are omitted). FIG. 2 is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present invention. It is. The semiconductor device has a semiconductor substrate (semiconductor chip or semiconductor wafer) 10. An integrated circuit 12 is formed on the semiconductor substrate 10 as shown in FIG. When the semiconductor substrate 10 is a semiconductor wafer, a plurality of integrated circuits 12 are formed.
[0009]
A plurality of electrodes (for example, pads) 14 are formed on the semiconductor substrate 10. The electrode 14 may be a part (end) of a wiring electrically connected to the integrated circuit 12. The plurality of electrodes 14 may be formed on the peripheral edge (end) of the surface of the semiconductor substrate 10. For example, the plurality of electrodes 14 may be arranged along four sides of the surface of the semiconductor substrate 10, or may be arranged along two sides. The electrode 14 is formed of, for example, Al.
[0010]
At least one passivation film 16 may be formed on the surface on which the electrode 14 is formed. The passivation film 16 is an electrically insulating film. The passivation film 16 may be formed only of a non-resin material (for example, SiO ₂ or SiN), or may further include a film made of a resin (for example, a polyimide resin). An opening is formed in the passivation film 16 to expose at least a part (for example, a central part) of the electrode 14. That is, the passivation film 16 is formed so as to avoid at least the central portion of the electrode 14. A passivation film 16 may be placed on the end of the electrode 14. The passivation film 16 may cover the entire periphery of the surface on which the electrode 14 is formed.
[0011]
On the semiconductor substrate 10, a resin layer 18 is formed. The resin layer 18 is formed on the surface on which the electrode 14 is formed (for example, the passivation film 16). The resin layer 18 may be formed of a resin such as a polyimide resin, a silicone-modified polyimide resin, an epoxy resin, a silicone-modified epoxy resin, benzocyclobutene (BCB; benzocyclobutene), and polybenzoxazole (PBO). The resin layer 18 may be formed by one layer or a plurality of layers.
[0012]
The semiconductor device has a plurality of lands 20. The land 20 is formed on the resin layer 18. The land 20 includes an elongated land 22 having a shape (for example, an elliptical shape or a rectangular shape) elongated along one axis (for example, the longitudinal axis of the wiring 26). The land 20 includes an equal-shaped land 24 of the same length (for example, circular or square) in any direction of two orthogonal axes. The long land 22 and the uniform land 24 may have the same area.
[0013]
The semiconductor device has a plurality of wirings (rewirings) 26. The plurality of wirings 26 electrically connect the plurality of electrodes 14 and the plurality of lands 20. One electrode 14 and one land 20 may be electrically connected by one wiring 26. The wiring 26 is formed so as to extend from above the electrode 14 to above the resin layer 18.
[0014]
At least one (for example, two or more) wirings 26 are arranged between the pair of long lands 22, and the pair of long lands 22 are arranged to be longer along the longitudinal direction of the wiring 26 located therebetween. It may be. According to the present embodiment, since the pair of long lands 22 is elongated along the longitudinal direction of the wiring 26 therebetween, the area between the pair of long lands 22 can be widened, The degree of freedom of formation can be increased. The wiring 26 may be covered with a solder resist (not shown). The solder resist may cover the periphery of the land 20.
[0015]
The semiconductor device may have a plurality of external terminals 28 and 30. The external terminals 28 and 30 are formed on the long land 24 and the uniform land 22, respectively. The external terminals 28 and 30 have different shapes corresponding to the difference in shape between the elongated land 24 and the equal-shaped land 22, but may have the same height. The external terminals 28 and 30 may be formed from a brazing material. The brazing material is a metal (for example, an alloy) having conductivity and is intended to be melted for electrical connection. The brazing material may be either a soft solder or a hard solder. Lead-free solder (hereinafter referred to as lead-free solder) may be used as the brazing material. Using a tin-silver (Sn-Ag), tin-bismuth (Sn-Bi), tin-zinc (Sn-Zn) or tin-copper (Sn-Cu) alloy as a lead-free solder Alternatively, at least one of silver, bismuth, zinc, and copper may be added to these alloys.
[0016]
The second resin layer 32 may be provided so as to be in contact with a portion of the external terminals 28 and 30 excluding the upper end. The contents of the resin layer 18 correspond to the second resin layer 32. By providing the second resin layer 32, stress generated in the external terminals 28 and 30 can be dispersed.
[0017]
The semiconductor device may be a BGA (Ball Grid Array) type package having external terminals 28 and 30 or a CSP (Chip Size Package). Alternatively, an LGA (Land Grid Array) type package in which the lands 20 are electrically connected to the outside may be applied to the semiconductor device without providing external terminals.
[0018]
The method for manufacturing a semiconductor device according to the present embodiment includes forming a resin layer 18 on a semiconductor substrate 10 having a plurality of electrodes 14. The semiconductor substrate 10 may be a semiconductor wafer on which a plurality of integrated circuits 12 are formed. On the resin layer 18, a plurality of lands 20 and a plurality of wirings 26 for electrically connecting the plurality of electrodes 14 and the plurality of lands 20 are formed. The wiring 26 is formed from the electrode 14 and is formed to pass over the resin layer 18. The wiring 26 is formed, for example, as follows. One or more conductive films are formed on the semiconductor substrate 10. For example, a conductive film may be formed by a TiW film and a Cu film thereon. The conductive film may be formed by sputtering. The conductive film may be formed at least in a region where the wiring 26 is formed, and may be formed on the entire surface of the semiconductor substrate 10 on which the electrode 14 is formed. Subsequently, a plating resist layer (not shown) is formed on the conductive film so as to exclude a region where the wiring 26 is formed. The plating resist layer provided on the conductive film may be patterned through a process such as photolithography. Then, the wiring 26 can be formed on the conductive film in the opening region of the plating resist layer by electrolytic plating using the conductive film as an electrode. Alternatively, the wiring 26 may be formed by electroless plating.
[0019]
When the semiconductor substrate 10 is a semiconductor wafer, the method for manufacturing a semiconductor device may include cutting (for example, dicing) the semiconductor wafer. Other manufacturing methods are contents derived from the configuration of the semiconductor device described above.
[0020]
FIG. 3 shows a circuit board 1000 on which the semiconductor device 1 according to the present embodiment is mounted. Generally, an organic substrate such as a glass epoxy substrate is used for the circuit board 1000. Wiring patterns made of, for example, copper are formed on the circuit board 1000 so as to form a desired circuit, and by electrically connecting those wiring patterns to the external terminals 28 of the semiconductor device 1, their electrical conduction is achieved. Plan. As an electronic apparatus having the semiconductor device 1 to which the present invention is applied, a notebook personal computer 2000 is shown in FIG. 4, and a mobile phone 3000 is shown in FIG.
[0021]
The present invention is not limited to the embodiments described above, and various modifications are possible. For example, the invention includes configurations substantially the same as the configurations described in the embodiments (for example, a configuration having the same function, method, and result, or a configuration having the same object and result). Further, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. Further, the invention includes a configuration having the same operation and effect as the configuration described in the embodiment, or a configuration capable of achieving the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.
[Brief description of the drawings]
FIG. 1 is a plan view (a part of components is omitted) for explaining a semiconductor device according to an embodiment of the present invention;
FIG. 2 is a sectional view illustrating a semiconductor device according to an embodiment of the present invention.
FIG. 3 is a diagram illustrating a circuit board on which the semiconductor device according to the present embodiment is mounted;
FIG. 4 is a diagram illustrating an electronic apparatus including the semiconductor device according to the embodiment;
FIG. 5 is a diagram illustrating an electronic device including the semiconductor device according to the embodiment;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Semiconductor device 10 ... Semiconductor substrate 12 ... Integrated circuit 14 ... Electrode 16 ... Passivation film 18 ... Resin layer 20 ... Land 22 ... Elongated land 22 ... Equally shaped land 24 ... Equally shaped land 26 ... Wiring 28 ... External terminal 30 ... External terminal 32: second resin layer

Claims (7)

A semiconductor substrate having a plurality of electrodes,
With multiple lands,
A plurality of wirings for electrically connecting the plurality of electrodes and the plurality of lands,
Has,
The semiconductor device, wherein the plurality of lands include an elongated land having a shape elongated along a longitudinal direction of any of the wirings. The semiconductor device according to claim 1,
The plurality of lands includes a pair of the elongated lands,
At least one of the wires is disposed between the pair of elongated lands;
The semiconductor device, wherein the pair of elongated lands are arranged so as to be longer in a longitudinal direction of the at least one wiring. The semiconductor device according to claim 2,
Two or more of the wirings are arranged between the pair of elongated lands,
The semiconductor device, wherein the pair of elongated lands are arranged so as to be longer in a longitudinal direction of the two or more wires. 4. The semiconductor device according to claim 1, wherein:
The plurality of lands further include equal-shaped lands having the same length in any direction of two orthogonal axes,
A semiconductor device in which the uniform land and the long land have the same area. A circuit board on which the semiconductor device according to claim 1 is mounted. An electronic apparatus comprising the semiconductor device according to claim 1. Forming a resin layer on a semiconductor substrate having a plurality of electrodes, and
Forming a plurality of lands and a plurality of wirings for electrically connecting the plurality of electrodes and the plurality of lands to the resin layer;
Including
A method of manufacturing a semiconductor device, wherein the plurality of lands are formed so as to include an elongated land having a shape elongated in a longitudinal direction of any of the wirings.

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