JP2004169092A - Thin film forming apparatus and thin film forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To deposit a thin film with uniform film thickness and film quality on a film-shaped substrate without causing thermal damage to the film-shaped substrate, and to improve the utilizing efficiency of a target as well when performing the thin film deposition in such a manner that thin film depositing particles flown from the target is stuck to the film-shaped substrate. <P>SOLUTION: In the thin film deposition system, thin film forming particles are flown from a target and are stuck to the surface of a film-shaped substrate running along the circumferential face of a substrate holding drum to deposit a thin film. In this case, an another target of the material same as that of the target is arranged so as to face a space between the circumferential face of the substrate holding drum and an electrode part for film deposition, a part of the thin film forming particles flown for thin film deposition from the target is stuck to the surface of the another target and recovered, and the recovered thin film forming particles are reutilized when in use of the other target. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a thin film forming apparatus and a thin film forming method for continuously forming a thin film by attaching thin film forming particles to a surface of a film-like substrate by a sputtering process.
[0002]
[Prior art]
Conventionally, a sputtering method used in such a thin film forming apparatus and a thin film forming method, particularly a magnetron sputtering method, is capable of forming a thin film having a complicated composition at a relatively high speed, obtaining a dense thin film, and forming a thin film. It is widely used as a means for forming a thin film in various fields such as electronic parts, optical parts, recording media, and decorative articles because of its characteristics such as excellent uniformity.
[0003]
On the other hand, in such a method, when forming the thin film, a thin film forming material called a target is used, but only a part of the thin film forming particles flying from the target adheres to the substrate and the thin film is formed. And the other thin film-forming particles adhere to portions other than the substrate, resulting in poor utilization efficiency for forming the thin film and increasing the manufacturing cost of forming a thin film on the substrate. Has also been pointed out. Therefore, in view of the recent demand for cost reduction, there is a strong demand for a measure for effectively using the target for forming the thin film.
[0004]
Examples of the method of effectively utilizing such a target for forming the thin film include (1) shortening the distance between the substrate and the target, and (2) providing a deposition-preventing plate around the substrate or the target. Extra thin film forming particles that are not used for forming the thin film are attached to the attachment plate, and the attached thin film forming particles are collected and reused later. (3) Devise the shape of the target, for example, a cylinder There has been proposed, for example, adopting a target in the shape of a letter and disposing a substrate at the center of the target (for example, see Patent Document 1).
[0005]
[Patent Document 1]
JP-A-10-330935
[0006]
[Problems to be solved by the invention]
However, in the method (1), when a plastic film substrate, which is an example of a film substrate, is used as the substrate, the surface of the plastic film substrate is generated by plasma generated between the target and the surface of the plastic film substrate. May be thermally damaged. In order to avoid such thermal damage, it is necessary to separate the target from the surface of the plastic film substrate by a predetermined distance, and there is a limit to reducing the distance.
[0007]
In the method (2), in order to collect and reuse the thin film-forming particles attached to the deposition-preventing plate, it is necessary to purify the thin-film forming particles from the deposition-preventing plate. The cost for collection and reuse is too high, and the manufacturing cost of forming a thin film must be high.
[0008]
Furthermore, the method (3) has limitations on the size and shape of the substrate, and cannot be applied to a film-like substrate such as a long plastic film substrate.
As described above, the conventional method of effectively utilizing the target for forming a thin film has a problem that it cannot be applied to a film-like substrate.
[0009]
Therefore, an object of the present invention is to solve the above-described problems, and when the thin film-forming particles flying from the target are attached to a film-like substrate to form a thin film, the film-like substrate is thermally damaged. An object of the present invention is to provide a thin film forming apparatus and a thin film forming method capable of forming the thin film with a uniform thickness and quality without generating the thin film and further improving the utilization efficiency of the target.
[0010]
[Means for Solving the Problems]
In order to achieve the above object, the present invention is configured as follows.
[0011]
According to the first aspect of the present invention, a thin film-forming particle is made to fly from a target placed on a film-forming electrode portion and travels along a peripheral surface of a substrate holding drum facing the target. In the thin film forming apparatus for continuously forming a thin film by attaching the thin film forming particles to the surface of the substrate,
A target collection unit that can be placed so that another target of the same material as the target is placed facing the space between the peripheral surface of the substrate holding drum and the electrode unit for film formation. Provided is a thin film forming apparatus.
[0012]
According to the second aspect of the present invention, the another target can be placed on the target collecting section so as to substantially surround the space together with the peripheral surface of the substrate holding drum and the film forming electrode section. A thin film forming apparatus according to a first aspect is provided.
[0013]
According to the third aspect of the present invention, the film-like substrate held on the holding surface of the substrate holding drum while continuously feeding the film-like substrate wound and held on the supply roll to the substrate holding drum In a thin film forming apparatus for continuously forming a thin film by the attached thin film forming particles by performing a sputtering process of causing the thin film forming particles to fly and adhere to the surface of the thin film forming device,
A film-forming electrode portion, which is arranged to be separated from the holding surface of the substrate holding drum by a predetermined distance so as to face the holding surface, and on which a first target on which the thin-film-forming particles fly is mounted;
The space between the holding surface and the film-forming electrode portion is disposed so as to substantially surround the space between the holding surface and the film-forming electrode portion, and is formed of the same material as the first target and the space is formed. And a target collecting section on which a second target for adhering and collecting a part of the thin film forming particles flying into the inside can be placed.
[0014]
According to the fourth aspect of the present invention, the first target and the second target have the same formation dimensions, and the film-forming electrode section is replaced by the second target instead of the first target. The thin film forming apparatus according to the third aspect, wherein the target described above can also be placed.
[0015]
According to the fifth aspect of the present invention, the target collecting section is a third film forming electrode section or another film forming electrode section for causing the thin film forming particles adhered to the second target and collected again to fly again. A thin film forming apparatus according to four aspects is provided.
[0016]
According to a sixth aspect of the present invention, there is provided the thin-film forming apparatus according to any one of the first to fifth aspects, wherein the film-forming electrode section is a magnetron sputtering type cathode.
[0017]
According to a seventh aspect of the present invention, there is provided the thin-film forming apparatus according to any one of the first to sixth aspects, wherein each of the targets is a rectangular plate.
[0018]
According to the eighth aspect of the present invention, each of the targets is held by a target holding plate, and the film-forming electrode section and the target collecting section mount the respective target holding plates in a detachable manner. A thin film forming apparatus according to any one of the first to seventh aspects is provided.
[0019]
According to a ninth aspect of the present invention, there is provided the thin film forming apparatus according to any one of the first to eighth aspects, wherein the film-shaped substrate is a plastic film substrate.
[0020]
According to a tenth aspect of the present invention, the film-like substrate held on the holding surface of the substrate holding drum while continuously feeding the film-like substrate wound and held on the supply roll to the substrate holding drum In a thin film forming method of performing a sputtering process of causing the thin film forming particles to fly and adhere to the surface of the thin film, and continuously forming a thin film with the attached thin film forming particles,
By rotating the supply roll and the substrate holding drum, to supply the film-like substrate to the holding surface,
One of the flying thin film forming particles is formed by flying the thin film forming particles toward the surface of the film-like substrate from the first target arranged opposite to the holding surface to form the thin film. The part is attached to the second target and collected,
Thereafter, a thin film forming method is provided in which the second target is arranged in place of the first target, and the thin film is formed by flying the thin film forming particles from the second target. I do.
[0021]
According to an eleventh aspect of the present invention, the film-like substrate held on the holding surface of the substrate holding drum while continuously feeding the film-like substrate wound and held on the supply roll to the substrate holding drum In a thin film forming method of performing a sputtering process of causing the thin film forming particles to fly and adhere to the surface of the thin film, and continuously forming a thin film with the attached thin film forming particles,
By rotating the supply roll and the substrate holding drum, to supply the film-like substrate to the holding surface,
One of the flying thin film forming particles is formed by flying the thin film forming particles toward the surface of the film-like substrate from the first target arranged opposite to the holding surface to form the thin film. The part is attached to the second target and collected,
Thereafter, a thin film forming method is provided in which the thin film is formed by flying the thin film forming particles from the second target instead of the first target.
[0022]
According to a twelfth aspect of the present invention, the film substrate held on the holding surface of the substrate holding drum while the film substrate wound and held on the supply roll is continuously supplied to the substrate holding drum In a thin film forming method of performing a sputtering process of causing the thin film forming particles to fly and adhere to the surface of the thin film, and continuously forming a thin film with the attached thin film forming particles,
By rotating the supply roll and the substrate holding drum, to supply the film-like substrate to the holding surface,
The thin film-forming particles are made to fly from the first target disposed opposite to the holding surface toward the surface of the film-like substrate to form the thin film, and one of the flying thin film-forming particles is formed. A method of forming a thin film, wherein the thin film is formed by flying the thin film-forming particles more than the second target while attaching and collecting the portion to a second target.
[0023]
Here, the meaning of the terms used in the present specification will be described.
[0024]
The term “space” is a space between the substrate holding drum and the film-forming electrode section, and includes at least a projection space of the film-forming electrode section onto the peripheral surface of the substrate holding drum. Further, in a direction orthogonal to a rotation center of the substrate holding drum in a direction along a surface of the film forming electrode portion, a direction from each end portion of the film forming electrode portion to a peripheral surface of the substrate holding drum. Two surfaces formed by respective tangents (that is, two surfaces formed so as to be in contact with the peripheral surface from the respective end portions), a peripheral surface of the substrate holding drum, and the film forming electrode portion Thus, the enclosed space may be the “space”. In addition, this space is also a space in which the thin film forming particles fly positively from the target by the plasma generated during the sputtering process.
[0025]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0026]
FIG. 1 is a schematic explanatory view showing a schematic configuration of a sputtering apparatus 101 as an example of a thin film forming apparatus and a thin film forming apparatus for performing a thin film forming method according to an embodiment of the present invention.
[0027]
As shown in FIG. 1, a sputtering apparatus 101 includes a vacuum vessel 1 for forming a thin film on a film-like substrate, and is connected to the vacuum vessel 1 to exhaust air or gas in the vacuum vessel 1 and clean the inside thereof. A vacuum pump 2 for evacuating. As the vacuum pump 2, for example, a diffusion pump, a cryopump, a turbo molecular pump, or the like is used.
[0028]
In the present embodiment, a plastic film substrate 7 is used as an example of the film substrate. Such a plastic film substrate 7 can be selected from, for example, polyvinyl chloride, polyethylene terephthalate, polycarbonate, polystyrene, polyethylene, polyamide, polyimide, or a fluororesin film according to the purpose. In the present embodiment, the plastic film substrate 7 is formed from polyethylene terephthalate having a formed thickness (that is, a film thickness) in the range of about 6 to 15 μm and having excellent formed dimension stability, strength, and electrical characteristics. Used.
[0029]
As shown in FIG. 1, a thin film forming section 20 for forming a thin film on the plastic film substrate 7 is provided inside the vacuum vessel 1, and the plastic film substrate 7 is transported to the thin film forming section 20. A substrate transport unit 10 is provided.
[0030]
First, as shown in FIG. 1, a supply roll capable of supplying the plastic film substrate 7 to the thin film forming unit 20 by holding the plastic film substrate 7 in a wound state and rotating the substrate transport unit 10. And a winding roll 12 for winding and holding the plastic film substrate 7 on which the thin film has been formed in the thin film forming section 20. Further, a cooling drum 13 which is an example of a substrate holding drum having a cylindrical shape is provided near the center of the inside of the vacuum vessel 1. Each of the cooling drum 13, the supply roll 11, and the take-up roll 12 is rotatable about its own axis, and is disposed in the vacuum vessel 1 such that each of the rotation centers is parallel. ing. Note that the formation length of the supply roll 11, the take-up roll 12, and the cooling drum 13 (that is, the formation length in the direction perpendicular to the plane of FIG. 1) is slightly larger than the formation width of the plastic film substrate 7. Is formed.
[0031]
Further, as shown in FIG. 1, the peripheral surface of the cooling drum 13 is a holding surface 13 a of the plastic film substrate 7, and the plastic film substrate 7 supplied by the supply roll 11 is in contact with the holding surface 13 a of the cooling drum 13. The plastic film substrate 7 is engaged (that is, the surface of the plastic film substrate 7 is in contact with the holding surface 13a), and the plastic film substrate 7 engaged with the holding surface 13a can be wound by the winding roll 12. As described above, the cooling drum 13 is disposed below the illustrated intermediate position between the supply roll 11 and the take-up roll 12.
[0032]
Further, each of the supply roll 11, the take-up roll 12, and the cooling drum 13 is provided with a rotation drive unit (not shown). The plastic film substrate 7 can be continuously conveyed at a constant speed to the take-up roll 12 via the cooling drum 13. In FIG. 1, the supply roll 11 is driven to rotate clockwise in the figure, the cooling drum 13 is driven to rotate counterclockwise in the figure, and the winding roll 12 is driven to rotate clockwise in the figure. Guide rolls 14 are provided between the supply roll 11 and the cooling drum 13 and between the cooling drum 13 and the take-up roll 12 to apply a constant tension to the conveyed plastic film substrate 7. I have. This prevents the plastic film substrate 7 from being sagged or wrinkled during transportation, and enables smooth transportation.
[0033]
In addition, the cooling drum 13 can cool the plastic film substrate 7 held on the holding surface 13a by heat transfer from the inside of the cooling drum 13a. This prevents thermal effects that occur when the thin film forming section 20 forms a thin film on the plastic film substrate 7 held on the holding surface 13a, for example, generation of cutting and wrinkling of the plastic film substrate 7. To do that. For example, the cooling drum 13 is cooled so that the holding surface 13a has a temperature in the range of −40 ° C. to 0 ° C., and can cool the plastic film substrate 7 held in contact.
[0034]
Next, as shown in FIG. 1, a sputter cathode 21, which is an example of a film forming electrode unit, is disposed on the thin film forming unit 20 at a predetermined distance so as to face the holding surface 13 a of the cooling drum 13. , And sputter cathodes 22A and 22B for collection, which are examples of a target collection unit disposed adjacent to both ends of the sputter cathode 21 in the horizontal direction in the figure.
[0035]
The sputter cathode 21 and the recovery sputter cathodes 22A and 22B each have a substantially rectangular shape, and the length of the formation (that is, the dimension in the direction perpendicular to the plane of FIG. Is substantially the same as the above forming length dimension.
[0036]
As shown in FIG. 1, the sputter cathode 21 is disposed vertically below the rotation center of the cooling drum 13 in the drawing, and has a functional surface on the upper surface thereof, which faces the holding surface 13a of the cooling drum 13. A first target 23 which is an example of a target made of a conductive material (or a thin film forming material) is detachably mounted.
[0037]
Here, the “functional material” is a material that forms a thin film on the surface of a film-like substrate. For example, when an electronic component is formed by forming the thin film, a material such as CuNi, NiCr, or NiTi is used. When an optical component is formed by forming the thin film, MgO, ITO, CaF, or the like is used. Is used. In the case where a recording medium is formed by forming the thin film, materials such as CoCr, CoNi, TbFeCo, and TeGeSb are used. In the case where the thin film is formed for decoration, Au, Ag, and the like are used. Is used. In the present embodiment, CoCr is mainly used as a functional material when the recording medium is formed, and a thin film formed on the surface of the film-like substrate by this is, for example, in a range of 50 to 200 nm. Film thickness.
[0038]
As shown in FIG. 1, the respective strip-shaped surfaces are arranged along respective tangential directions to the peripheral surface of the cooling drum 13 from the respective left and right ends of the sputtering cathode 21 in the drawing. Thus, each of the recovery sputtering cathodes 22A and 22B is arranged. With this arrangement, the space Z, which is an example of the space between the holding surface 13a of the cooling drum 13 and the upper surface of the sputter cathode 21, is formed together with the holding surface 13a and the upper surface of the sputter cathode 21 together with the collecting sputter cathode. It is in a state surrounded by 22A and 22B. Note that the space Z is not completely enclosed, but is provided between the holding surface 13a of the cooling drum 13 and each of the recovery sputtering cathodes 22A and 22B so as not to hinder the rotational driving of the cooling drum 13. Is secured, and the space Z is substantially surrounded. In FIG. 1, the illustrated upper surface of the sputter cathode 21 and a space in which the illustrated upper surface of the sputter cathode 21 is sandwiched between a projection surface that is projected upward on the holding surface 13 a of the cooling drum 13. Is a “projection space” of the sputtering cathode 21 onto the holding surface 13 a of the cooling drum 13. That is, the “projection space” is included in the space Z in FIG.
[0039]
Further, each of the recovery sputtering cathodes 22A and 22B also has a second target 24 (an example of a target made of the above-mentioned functional material) on a surface located on the space Z side (this second target 24 is Is also an example of a target.). Thus, it can be said that the space Z is in a state surrounded by the first targets 23, the respective second targets 24, and the holding surfaces 13a. Each second target 24 is formed of the same material and the same composition as the first target 23 mounted on the sputter cathode 21 and has the same formation dimensions.
[0040]
The power supply device 3 is connected to the sputter cathode 21. The power supply device 3 applies a DC voltage or a pulsed DC voltage, an AC voltage, or a high-frequency voltage to the sputtering cathode 21 to generate a discharge required for the sputtering process toward the space Z above the sputtering cathode 21. It is possible to make it. Note that the power supply device 3 is installed outside the vacuum vessel 1. Further, each of the main body of the vacuum vessel 1 and the main body of the power supply device 3 is grounded (earthed). Although the cooling drum 13 may or may not be grounded depending on the purpose and structure, in the present embodiment, the cooling drum 13 is also grounded (not shown). Further, the sputter cathode 21 and the respective recovery sputter cathodes 22A and 22B are not grounded because they are used in a floating state. In the present embodiment, for example, a power supply device 3 having an electric capacity of 10 kW and an input power of 3 to 4 kW is used.
[0041]
The predetermined distance between the sputter cathode 21 and the holding surface 13a of the cooling drum 13 is, for example, a distance of about 7 to 10 cm. In consideration of the property that the plastic film substrate 7 is vulnerable to heat, the plastic film substrate 7 does not cause thermal damage during the formation of the thin film in which the discharge or the like is generated, and the distance as close as possible to the holding surface 13a. It is.
[0042]
Here, the detailed structures of the sputter cathode 21 and the recovery sputter cathodes 22A and 22B will be described. The sputter cathode 21 and the recovery sputter cathodes 22A and 22B have the same configuration and shape except that a voltage is applied to the sputter cathode 21. Therefore, the structure of the sputter cathode 21 will be described more representatively, and a schematic exploded perspective view of the sputter cathode 21 is shown in FIG.
[0043]
As shown in FIG. 2, the sputtering cathode 21 includes a backing plate 25 which is an example of a target holding plate for holding the first target 23, and a storage case 27 on which the backing plate 25 is removably mounted. ing. Further, the upper surface of the storage case 27 is recessed in a substantially concave shape except for the vicinity of the periphery thereof, and a magnet 26 is provided inside the concave portion. Such a structure in which the magnet 26 is incorporated in the sputter cathode 21 is used in a sputtering method called a magnetron method.
[0044]
The first target 23 held by the backing plate 25 is bonded (that is, bonded) to the upper surface of the backing plate 25 with an adhesive material such as indium. The backing plate 25 is made of, for example, oxygen-free copper. The backing plate 25 is detachably attached to the upper surface of the storage case 27 in the drawing so as to cover the concave portion of the storage case 27 storing the magnet 26. Further, a structure in which the first target 23 can be cooled via the backing plate 25 by circulating a coolant, for example, water inside the storage case 27 is provided.
[0045]
Further, the sputtering apparatus 101 is provided with a reaction gas supply unit (not shown) for supplying a reaction gas for forming a thin film inside the vacuum vessel 1. As the reaction gas, an argon gas or a gas obtained by partially adding oxygen or the like to an argon gas is used. In the present embodiment, argon gas is used as the reaction gas.
[0046]
As shown in FIG. 1, a partition plate 1 a is provided inside the vacuum vessel 1 so as to be divided into a substrate transport section 10 and a thin film forming section 20. The take-up roll 12 and the guide roll 14 are separated from the thin film forming section 20 by a partition plate 1a for the purpose of preventing deposition of the thin film forming material and the like. Further, for example, an adsorbed gas which is a gas containing moisture may be generated from the plastic film substrate 7 having a characteristic of easily absorbing moisture during vacuuming. In particular, the plastic film substrate 7 may be wound up. In the substrate transport unit 10 where the supply roll 11 is installed, the amount of generated adsorbed gas may increase. However, since the substrate transport unit 10 and the thin film forming unit 20 are separated by the partition plate 1a, the amount of the adsorbed gas entering the thin film forming unit 20 from the substrate transport unit 10 can be reduced. It is possible to prevent the adsorbed gas from affecting the thin film formation. Further, the cooling drum 13 is disposed so as to penetrate the partition plate 1a without contacting the partition plate 1a.
[0047]
Next, a procedure for forming a thin film by performing a sputtering process on the surface of the plastic film substrate 7 using the sputtering apparatus 101 having such a configuration will be described.
[0048]
First, in the sputtering apparatus 101 of FIG. 1, a first target 23 is attached to the sputtering cathode 21, and a second target 24 is attached to each of the collecting sputtering cathodes 22A and 22B.
[0049]
Next, the vacuum vessel 1 is sealed, and the vacuum pump 2 is operated to exhaust the air inside the vacuum vessel 1. ^-3 ~ 1 × 10 ^-5 The pressure is in the range of Pa. Thereafter, an argon gas is introduced into the vacuum vessel 1 maintained at the above pressure for forming a thin film by sputtering. As a result, the pressure inside the vacuum vessel 1 becomes 5 × 10 ^-1 ~ 5 × 10 ^-2 Pa is maintained.
[0050]
In such a state, the supply roll 11, the take-up roll 12, and the cooling drum 13 are synchronously driven to rotate around their respective rotation centers by operating the substrate transfer unit 10 in the sputtering apparatus 101 shown in FIG. The plastic film substrate 7 unwound from the supply roll 12 is conveyed continuously and at a constant speed such that the plastic film substrate 7 is wound up by the take-up roll 12 while being held on the holding surface 13 a which is the peripheral surface of the cooling drum 13. . At this time, since the plastic film substrate 7 is given a predetermined tension by the respective guide rolls 14, the plastic film substrate 7 is smoothly conveyed without causing slack or wrinkles during the above-described conveyance.
[0051]
At the same time, in the thin film forming section 20 of FIG. 1, a voltage is applied to the sputtering cathode 21 by the power supply device 3, and a discharge is generated above the sputtering cathode 21, that is, toward the space Z. On the other hand, since the argon gas introduced into the vacuum vessel 1 is introduced into the space Z, the discharge generates plasma in the space Z. The ions in the plasma collide with the surface of the first target 23, and a number of target atoms (or molecules, the same applies hereinafter), which are examples of thin film forming particles, are ejected into the space Z from the first target 23. . The target atoms ejected into the space Z fly toward the holding surface 13a of the cooling drum 13 surrounding the space Z, and adhere to the surface of the plastic film substrate 7 held on the holding surface 13a. By continuously attaching such target atoms, a thin film is formed on the surface of the plastic film substrate 7.
[0052]
On the other hand, all of the target atoms ejected into the space Z do not necessarily fly toward the holding surface 13a, and a part of each of the target atoms is moved in the horizontal direction of the space Z in FIG. Some are flying. Such a part of the target atoms adhere to and are trapped on the surfaces of the respective second targets 24 held by the recovery sputtering cathodes 22A and 22B arranged so as to surround the space Z. At this time, each of the second targets 24 held by the collecting sputter cathodes 22A and 22B and the surface of the holding surface 13a of the cooling drum 13 are reduced so that each of the second targets 24 is reduced. By arranging the sputter targets 22A and 22B, the target atoms can be more effectively captured. The target atoms can also be more effectively captured by reducing the gap between the sputter cathode 21 and the respective sputter cathodes for collection 22A and 22B. In the direction perpendicular to the plane of FIG. 1, that is, in the direction along the rotation center of the cooling drum 13, the space Z is not surrounded by the sputter cathodes for collection 22 </ b> A and 22 </ b> B. In this case, another collecting sputter cathode may be disposed at the end to capture the target atoms.
[0053]
In this manner, a thin film is formed on the surface of the plastic film substrate 7 facing the space Z while continuously attaching target atoms to the plastic film substrate 7 on which the thin film having a predetermined thickness is formed. 7 is continuously wound by a winding roll 12. When the plastic film substrate 7 is wound on the take-up roll 12 to complete the sputtering process, the application of the voltage to the sputter cathode 21 by the power supply device 3 is stopped, and the transport of the plastic film substrate 7 by the substrate transport unit 10 is performed. Is stopped. In addition, the introduction of the argon gas into the vacuum vessel 1 is stopped, the vacuum pump 2 is stopped, the exhaust of the gas inside the vacuum vessel 1 is stopped, and the sealing of the vacuum vessel 1 is opened. Thus, the formation of a thin film on the plastic film substrate 7 by the sputtering process is completed.
[0054]
Thereafter, before the next batch on the plastic film substrate 7, that is, before the thin film is formed on the new plastic film substrate 7 by the sputtering process, the first target 23 held on the sputter cathode 21 is moved together with the backing plate 25, It is removed from the storage case 27 (if the first target 23 is used up for forming the thin film, only the backing plate 25 is removed), and the second sputtering target is removed from one of the collecting sputter cathodes 22A and 22B. The second target 24 is removed together with the backing plate. The removed second target 24 is attached to the storage case 27 of the sputter cathode 21 together with the backing plate. Then, a backing plate holding a new second target 24 is attached to the recovery sputtering cathode 22A or 22B from which the second target 24 has been removed. At this time, since each target and the backing plate have the same shape, the backing plate holding the second target 24 can be easily attached to the sputter cathode 21 without any trouble.
[0055]
In such a state, a thin film is formed by sputtering on a new plastic film substrate as the next batch. At the time of this thin film formation, target atoms are made to fly from a second target 24 attached to the sputter cathode 21, and the surface of the second target 24 is trapped in the previous batch. The target atoms of the first target 23 are attached. For this reason, in the present batch, the target atoms flying from the second target 24 include the target atoms of the first target 23 attached in the previous batch, that is, the target atoms are collected. , And reuse. The detailed procedure for forming the thin film in this batch is the same as the procedure for forming the thin film in the previous batch described above, and thus the description thereof is omitted.
[0056]
In the present embodiment, as shown in FIG. 1, a case where two recovery sputtering cathodes 22A and 22B are used has been described. However, the number of the recovery sputtering cathodes 22 is limited only in such a case. It is not limited. Instead of such a case, a case where only one recovery sputtering cathode is provided, or a case where three or more sputtering cathodes are provided may be employed. By installing at least one recovery sputtering cathode so as to face the space Z, or by installing three or more recovery sputtering cathodes so as to surround the space Z, the target atoms can be recovered. This is because it becomes possible.
[0057]
Further, in the above description, the case where the first target 23 and the second target 24 have the same shape has been described, but instead of such a case, the first target 23 and the second target 24 may not have the same shape. It may be the case. However, in such a case, when the second target 24 is attached instead of the first target 23, a processing for adjusting the shape of the second target 24 to the shape of the first target 23 is performed. Since it may be necessary, the first target 23 and the second target 24 preferably have the same shape.
[0058]
In the present embodiment, the case where an electronic component, a recording medium, and the like are formed is mainly described as the formation of the thin film. However, the present embodiment is not limited to such a case. For example, the present invention can be applied to a case where a thin film is formed on a plastic film substrate for decorative purposes. In such a case where the thin film is used for decoration, there is a feature that the formed thin film itself does not require a functional one such as an electronic component. For this reason, in the above description, the case where the first target 23 and the second target 24 are formed of the same material is limited. It may be the case that it is formed of a different material. However, even when the thin film is formed for decoration, the first target 23 and the second target 24 are made of substantially the same material in consideration of the recovery and reuse of the target atoms. It must be formed with.
[0059]
Here, an embodiment according to a modification of the present embodiment will be described below.
[0060]
The sputtering apparatus according to the present embodiment has substantially the same configuration as the sputtering apparatus 101 according to the above-described embodiment, and the respective recovery sputtering cathodes 22A and 22B are connected to the power supply device 3 together with the sputtering cathode 21. Thus, the only difference is that the voltage can be applied. That is, the only difference is that each of the collecting sputtering cathodes 22A and 22B is also an example of another film forming electrode unit.
[0061]
As described above, since a voltage can be applied to each of the recovery sputtering cathodes 22A and 22B, a voltage is first applied only to the main sputtering cathode 21 to the plastic film substrate 7, The target atoms which fly in the space Z other than the surface of the plastic film substrate 7 are attached to the second target 24 and collected while the target atoms fly from the first target 23 to form a thin film. Thereafter, after the first target 23 of the sputter cathode 21 has been used up, a voltage is applied from the power supply device 3 to each of the recovery sputtering cathodes 22A and 22B to cause target atoms to fly from the respective second targets 24. Then, a thin film is formed on the plastic film substrate 7. At this time, since some of the target atoms flying from the first target 23 are attached and collected on the surface of each second target 24, these collected target atoms are formed into a thin film. Can be reused. According to such a method, the time during which thin film formation can be performed continuously can be extended while collecting target atoms and reusing them for forming thin films.
[0062]
An embodiment according to another modification of the present embodiment uses a sputtering apparatus having the same configuration as the sputtering apparatus in the embodiment according to the above-described modification, and uses the sputtering cathode 21 and the respective recovery sputtering cathodes 22A and 22B. In this method, a thin film is formed by simultaneously applying a voltage from the power supply device 3. In such a method, a thin film can be formed by flying target atoms from the first target 21 and a thin film can be formed by flying target atoms also from the respective second targets 23. The time required for formation can be reduced, and the processing speed of the sputtering process can be increased. In addition, the respective target atoms that are flying from the first target 23 and the respective second targets 24 and are not attached to the surface of the plastic film substrate 7 are attached to each other to be collected, and the collected target atoms are further collected. It can fly again and be reused for thin film formation.
[0063]
According to the above embodiment, the following various effects can be obtained.
[0064]
First, in the sputtering apparatus 101, the respective collecting sputter cathodes 22A and 22B are arranged so as to surround the space Z between the holding surface 13a of the cooling drum 13 and the sputter cathode 21. The first target 23 is placed on the Z side, and the second target 24 is placed on the space Z side of each of the recovery sputtering cathodes 22A and 22B. Excessive target atoms among a large number of target atoms flying in the space Z for forming a thin film on the surface of the substrate 7 can be collected by attaching to the surface of the second target 24.
[0065]
Further, since the respective second targets 24 for attaching and collecting the extra target atoms are formed of the same material as the first target 23, for example, when forming a thin film of the next batch, etc. The second target 24 is placed on the sputter cathode 21, and a large number of target atoms including the attached and recovered target atoms are caused to fly from the second target 24 into the space Z, thereby forming the plastic film substrate 7. A thin film can be formed on the surface.
[0066]
Therefore, when a thin film is formed on the plastic full film substrate 7 by the sputtering apparatus 101, it is possible to improve the utilization efficiency of target atoms flying from the target for forming the thin film.
[0067]
For example, as an example, when a thin film is formed on the surface of the plastic film substrate 7 in the sputtering apparatus 101, the amount of weight reduction of the first target 23 of the sputtering cathode 21 and the adhesion to the plastic film substrate 7 are formed. The weight of the thin film thus obtained and the weight of target atoms attached to the second target 24 of each of the recovery sputtering cathodes 22A and 22B were determined, and the utilization efficiency of the first target 23 for forming the thin film was calculated. In the conventional method of forming a thin film by sputtering, only about 40% of the target atoms flying from the target adhere to the plastic film substrate, and the remaining 60% of the target atoms adhere to the outer wall of the vacuum vessel or the like. Was. On the other hand, in the sputtering apparatus 101 of the above embodiment, about 40% of the target atoms flying from the first target 23 adhere to the sputtering sputters 22A and 22B for recovery, and about 20% of the remaining target atoms of the vacuum vessel 1 It was attached to the outer wall. Therefore, considering the reuse of the target atoms collected by being attached to the respective second targets 24, about 80% of the target atoms can be used for forming the thin film, and the efficiency of using the target for forming the thin film can be improved. Can be improved.
[0068]
In addition to the fact that each of the second targets 24 is formed of the same material as the first target 23, and that they are both formed in the same shape, the extra target atoms are attached and deposited. The first target 23 can be attached to and mounted on the sputter cathode 21 from which the first target 23 has been removed without processing the shape of the collected second target 24, and the collected target atoms can be reused more easily. be able to. In other words, in other words, the sputter cathode 21 on which the first target 23 is removably mounted can removably mount the second target 24 instead of the first target 23, and the above-described effect is obtained. Can be achieved.
[0069]
Further, the sputter cathode 21 to which a voltage for discharging to the space Z is applied from the power supply device 3 is arranged at a predetermined distance from the holding surface 13 of the cooling drum 13 holding the plastic film substrate 7. Thereby, it is possible to prevent the surface of the plastic film substrate 7 from being thermally damaged by the discharge. In addition, the surface of the plastic film substrate 7 is not positioned near the central portion of the plasma generated in the space Z by the discharge, because the plastic film substrate 7 is disposed at the predetermined distance. 7 can be prevented from being damaged. Therefore, it is possible to improve the use efficiency of the target without giving a thermal damage or the like when forming a thin film to a film-like substrate such as a plastic film substrate 7 having a property of being weak in heat or strength. It can be feasible.
[0070]
Further, since the first target 23 and the second target 24 are each formed in a rectangular plate shape, the processing and formation thereof are easy, and the surface area surrounding the space Z can be increased. Atomic recovery efficiency can be improved.
[0071]
In the sputter cathode 21, the backing plate 25 is detachably attached to the storage case 27 while the first target 23 is adhered and held on the surface of the backing plate 25. In the recovery sputtering cathodes 22A and 22B, the second target 24 was attached to the storage case while being adhered and held on the surface of the backing plate, so that the target atoms were attached and recovered. When attaching the second target 24 to the sputter cathode 21, the second target 24 can be attached together with the above-mentioned backing plate, and the first target 23 and the second target 24 can be more easily attached, detached, and replaced.
[0072]
In addition, in addition to the sputter cathode 21, a voltage can be applied from the power supply device 3 to each of the recovery sputter cathodes 22. A thin film can be formed by the sputtering method.
[0073]
For example, first, a voltage is applied only to the main sputtering cathode 21 with respect to the plastic film substrate 7 so that the target atoms fly from the first target 23 to form a thin film, and the second target 24 partially applies the thin film. After the first target 23 has been used up and the first target 23 has been used up, a voltage is applied from the power supply 3 to the respective sputter cathodes 22A and 22B for collection, and the second target 24 By causing the target atoms to fly, a thin film can be formed on the plastic film substrate 7. According to such a method, the thin film can be formed continuously and for a long time while the target atoms are collected and reused for forming the thin film, and are suitable for forming the thin film on the long plastic film substrate 7. And a method for forming a thin film.
[0074]
Further, for example, a thin film can be formed by simultaneously applying a voltage from the power supply device 3 to the sputter cathode 21 and the respective sputter cathodes for collection 22A and 22B. In such a method, a thin film can be formed by flying target atoms from the first target 21 and a thin film can be formed by flying target atoms also from the respective second targets 23. The time required for formation can be reduced, and the processing speed of the sputtering process can be increased. In addition, the respective target atoms that are flying from the first target 23 and the respective second targets 24 and are not attached to the surface of the plastic film substrate 7 are attached to each other to be collected, and the collected target atoms are further collected. It can fly again and be reused for thin film formation.
[0075]
When a magnet is built in the sputter cathode 21 or in the sputter cathodes 22A and 22B for collection together with the sputter cathode 21, the sputter cathode 21 and the sputter cathodes 22A and 22B for collection are replaced with magnetron sputter type magnets. A sputtering process can be performed as a cathode, and in the sputtering apparatus 101, the applied voltage can be reduced and the thin film formation speed can be improved. It is possible to form an effective thin film.
[0076]
Further, the plastic film substrate 7 held on the holding surface 13a of the cooling drum 13 is in a state where the portion facing the space Z is limited by the respective recovery sputtering cathodes 22A and 22B, that is, a thin film is formed. Is limited, the thickness of the thin film, which is the thickness of the thin film, can be made uniform, and the adhesion of foreign matter and the like from outside can be prevented, and the uniform film quality can be obtained. And a higher quality thin film can be formed.
[0077]
Note that by appropriately combining any of the various embodiments described above, the effects of the respective embodiments can be achieved.
[0078]
【The invention's effect】
According to the first aspect of the present invention, in the thin film forming apparatus, the target collecting unit is provided so as to face a space between the peripheral surface of the substrate holding drum and the film forming electrode unit. A target is placed on the electrode unit for use, and another target is placed on the target collection unit, so that a large number of the targets fly into the space to form a thin film on the surface of the film-like substrate from the target. Excessive thin film forming particles, which are a part of the thin film forming particles, can be collected by attaching to the surface of the another target.
[0079]
Further, since the another target for attaching and collecting the extra thin film forming particles is formed of the same material as the target, for example, when forming a thin film of the next batch, the another target is used. Is placed on the film-forming electrode portion, and a large number of the thin film-forming particles including the thin film-forming particles adhered and collected from the another target are flown into the space from the another target, and the surface of the film-like substrate is A thin film can be formed.
[0080]
Therefore, when a thin film is formed on the film-like substrate by the thin film forming apparatus, the utilization efficiency of the thin film forming particles flying from the target for forming a thin film can be improved.
[0081]
According to the second aspect of the present invention, further, the target collection section is disposed so as to substantially surround the space together with the peripheral surface of the substrate holding drum and the film-forming electrode section. The thin film-forming particles, which are not attached to the film-like substrate and are not used for forming the thin film, among the many thin film-forming particles flying from the target to the space, are surely adhered to the another target and collected. And the collection efficiency of the thin film-forming particles can be further increased. Further, in a case where a plurality of the target collecting sections are provided and the respective target collecting sections are arranged so as to substantially surround the space together with the peripheral surface of the substrate holding drum and the film forming electrode section. As a result, the space can be more easily and reliably surrounded, and the above-described effect can be reliably obtained.
[0082]
Further, by substantially surrounding the space in this manner, a portion (area) of the surface of the film-shaped substrate facing the space can be limited, that is, an area in which a thin film is formed can be limited. In addition, the thickness of the thin film to be formed can be made uniform, and the adhesion of foreign substances and the like to the film-like substrate from outside the space can be prevented, so that uniform film quality can be obtained. A higher quality thin film can be formed.
[0083]
According to the third aspect of the present invention, it is possible to obtain the same effects as those of the first and second aspects by using the target as the first target and the another target as the second target. it can. In addition, since the film-forming electrode portion is arranged at a predetermined distance so as to face the holding surface of the substrate holding drum, thermal damage or the like on the surface of the film-like substrate is prevented. Giving can be prevented. Therefore, it is possible to improve the use efficiency of the target without thermally damaging the film-like substrate having the property of being thermally weak when the thin film is formed.
[0084]
According to the fourth aspect of the present invention, in addition to the fact that the second target is formed of the same material as the first target, and further that both have the same formation dimensions, Instead of processing the shape of the second target to which the thin film forming particles have been attached and collected, the second target can be placed on the film forming electrode portion instead of the first target. Thus, the recovered thin film forming particles can be more easily reused. In other words, the film-forming electrode section on which the first target is removably mounted can be configured so that the second target can be removably mounted instead of the first target. By doing so, the above effects can be achieved.
[0085]
According to the fifth aspect of the present invention, the thin film forming particles adhered and collected on the second target are separated from the second target electrode by the second collection target electrode part being another deposition electrode part. Instead of placing the target on the film-forming electrode portion instead of the first target, the target can be directly fly from the second target and reused.
[0086]
According to the sixth aspect of the present invention, the film forming electrode section including the another film forming electrode section is a magnetron sputtering type cathode. Can be performed, the applied voltage can be reduced, the speed of forming the thin film can be improved, and the thickness of the formed thin film can be made more uniform. A more efficient and high-quality thin film can be formed while improving the efficiency.
[0087]
According to the seventh aspect of the present invention, since each of the targets is a rectangular plate, processing and formation thereof can be facilitated, and each of the targets substantially surrounding the space (ie, each of the targets) , The first target and the second target) can be increased in surface area, and the collection efficiency of the thin film-forming particles can be improved.
[0088]
According to the eighth aspect of the present invention, each of the targets is held by a target holding plate, and the film forming electrode portion and the target collecting portion detachably mount the respective target holding plates. By being mountable, it is possible to easily attach and detach the respective targets when exchanging the targets.
[0089]
According to the ninth aspect of the present invention, when the film-shaped substrate is a plastic film substrate that is widely used for electronic components and optical components as well as recording media and the like for forming a thin film, Can be applied effectively.
[0090]
According to the tenth aspect of the present invention, the thin film-forming particles are made to fly toward the surface of the film-like substrate from the first target arranged opposite to the holding surface while forming the thin film. Collecting a part of the flying thin film forming particles by attaching the second target to the second target, and then disposing the second target in place of the first target; By flying the thin film forming particles to form the thin film, it is possible to improve the utilization efficiency of the first target for forming the thin film.
[0091]
According to the eleventh aspect of the present invention, the thin film-forming particles are made to fly from the first target arranged opposite to the holding surface toward the surface of the film-like substrate to form the thin film. A part of the flying thin film-forming particles is attached to a second target and collected, and then, instead of the first target, the thin film-forming particles are flown from the second target to fly the thin film-forming particles. By forming a thin film, the thin film can be formed continuously and for a long time while improving the utilization efficiency of the first target for forming the thin film. A method for forming a thin film suitable for forming the thin film on a substrate can be provided.
[0092]
According to the twelfth aspect of the present invention, the thin film is formed by flying the thin film forming particles toward the surface of the film substrate from the first target disposed opposite to the holding surface. By adhering a part of the flying thin film forming particles to a second target and collecting the flying thin film forming particles, the thin film forming particles are made to fly from the second target to form the thin film, whereby the second thin film is formed. The utilization efficiency of the second target can be simultaneously improved while improving the utilization efficiency of the first target for forming the thin film. Further, the time required for forming the thin film can be reduced, and the processing speed of the sputtering process can be improved.
[Brief description of the drawings]
FIG. 1 is a schematic explanatory view of a sputtering apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic explanatory view of a sputtering cathode in the sputtering apparatus.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Vacuum container, 1a ... Partition plate, 2 ... Vacuum pump, 3 ... Power supply device, 7 ... Plastic film substrate, 10 ... Substrate conveyance part, 11 ... Supply roll, 12 ... Winding roll, 13 ... Cooling drum, 14 ... Guide roll, 20: thin film forming section, 21: sputter cathode, 22A and 22B: recovery sputter cathode, 23: first target, 24: second target, 25: backing plate, 26: magnet, 27: storage case , 101: sputtering apparatus, Z: space.

Claims (12)

The thin film forming particles fly from a target (23) placed on the film forming electrode portion (21) and travel along the peripheral surface (13a) of the substrate holding drum (13) facing the target. In a thin film forming apparatus (101) for continuously forming a thin film by attaching the thin film forming particles to the surface of a film-like substrate (7),
Another target (24) made of the same material as the target can be placed so as to face a space (Z) between the peripheral surface of the substrate holding drum and the electrode part for film formation. (22A, 22B). 2. The thin film forming apparatus according to claim 1, wherein the target collection unit is capable of mounting the another target so as to substantially surround the space together with the peripheral surface of the substrate holding drum and the film forming electrode unit. 3. The film held on the holding surface (13a) of the substrate holding drum while continuously feeding the film-shaped substrate (7) wound and held on the supply roll (11) to the substrate holding drum (13). In a thin film forming apparatus (101) for continuously forming a thin film by the attached thin film forming particles by performing a sputtering process of causing the thin film forming particles to fly and adhere to the surface of the substrate,
A film-forming electrode section (a film-forming electrode section (23) that is arranged to be spaced apart from the holding surface of the substrate holding drum by a predetermined distance and that can mount a first target (23) on which the thin film forming particles fly 21),
The space (Z) between the holding surface and the film-forming electrode portion is disposed so as to substantially surround the space (Z) together with the holding surface and the film-forming electrode portion, and is formed of the same material as the first target. And a target collecting section (22A, 22B) on which a second target (24) for attaching and collecting a part of the thin film-forming particles flying into the space can be placed. Thin film forming equipment. The first target and the second target have the same formation dimensions, and the film-forming electrode section can mount the second target in place of the first target. Item 4. A thin film forming apparatus according to item 3. The thin film forming apparatus according to claim 3, wherein the target collecting unit is another film forming electrode unit that causes the thin film forming particles adhered to the second target and collected, to fly again. The thin film forming apparatus according to any one of claims 1 to 5, wherein the film forming electrode unit is a magnetron sputtering type cathode. 7. The thin film forming apparatus according to claim 1, wherein each of the targets is a rectangular plate. The said each target is hold | maintained by the target holding plate (25), The said film-forming electrode part and the said target collection | recovery part can mount each said target holding plate so that attachment or detachment is possible from Claim 1. 8. The thin film forming apparatus according to any one of items 7 to 7. The thin film forming apparatus according to any one of claims 1 to 8, wherein the film-shaped substrate is a plastic film substrate (7). The film held on the holding surface (13a) of the substrate holding drum while continuously feeding the film-shaped substrate (7) wound and held on the supply roll (11) to the substrate holding drum (13). In a thin film forming method of performing a sputtering process for causing the thin film forming particles to fly and adhere to the surface of the substrate, and continuously forming a thin film by the attached thin film forming particles,
By rotating the supply roll and the substrate holding drum, to supply the film-like substrate to the holding surface,
Forming the thin film by flying the thin film-forming particles toward the surface of the film-like substrate from a first target (23) disposed opposite to the holding surface; Collecting and attaching a part of the particles to the second target (24);
Thereafter, the second target is disposed in place of the first target, and the thin film is formed by flying the thin film forming particles from the second target. The film held on the holding surface (13a) of the substrate holding drum while continuously feeding the film-shaped substrate (7) wound and held on the supply roll (11) to the substrate holding drum (13). In a thin film forming method of performing a sputtering process for causing the thin film forming particles to fly and adhere to the surface of the substrate, and continuously forming a thin film by the attached thin film forming particles,
By rotating the supply roll and the substrate holding drum, to supply the film-like substrate to the holding surface,
Forming the thin film by flying the thin film-forming particles toward the surface of the film-like substrate from a first target (23) disposed opposite to the holding surface; Collecting and attaching a part of the particles to the second target (24);
And forming the thin film by flying the thin film forming particles from the second target instead of the first target. The film held on the holding surface (13a) of the substrate holding drum while continuously feeding the film-shaped substrate (7) wound and held on the supply roll (11) to the substrate holding drum (13). In a thin film forming method of performing a sputtering process for causing the thin film forming particles to fly and adhere to the surface of the substrate, and continuously forming a thin film by the attached thin film forming particles,
By rotating the supply roll and the substrate holding drum, to supply the film-like substrate to the holding surface,
From the first target (23) arranged opposite to the holding surface, the thin film forming particles are made to fly toward the surface of the film substrate to form the thin film, and the flying thin film is formed. A method for forming a thin film, wherein the thin film is formed by flying the thin film forming particles from the second target while collecting and attaching a part of the particles to a second target (24).

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