JP2004096033A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

An object of the present invention is to provide a semiconductor device and a method for manufacturing the semiconductor device, in which the amount of cutting debris, dust, and the like attached to a sensor unit is reduced, device defects are reduced, and the product yield is improved.
A semiconductor substrate (32) having a sensor portion (34) provided on an upper surface thereof, a cover fixing portion (39) provided on the semiconductor substrate (32) so as to surround the entire periphery of the sensor portion (34), A light-transmitting cover 41 fixed so as to cover and form a hollow portion 40 above the sensor portion 34 before separation, and a position outside the fixed portion of the light-transmitting cover 41 corresponding to the sensor portion 34. , And the lower surface of the semiconductor substrate 32 is configured as a mounting surface 46.
[Selection diagram] Fig. 1

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device suitable for a semiconductor device such as a CMOS sensor or a CCD and a method for manufacturing the same.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, a semiconductor device having an image sensor such as a CMOS sensor or a CCD is configured such that a light-transmitting cover is provided above a sensor unit and a hollow portion is provided between the sensor unit and the manufacturing process and mounting on a mounting board. It is as follows.
[0003]
Hereinafter, the related art will be described with reference to FIGS. 9 is a cross-sectional view showing a first manufacturing step, FIG. 10 is a cross-sectional view showing a second manufacturing step, FIG. 11 is a cross-sectional view showing a third manufacturing step, and FIG. 13 is a cross-sectional view showing a state in which the semiconductor device is mounted on a mounting board.
[0004]
First, the manufacturing process will be described with reference to FIGS. 9 to 12. In a first manufacturing process shown in FIG. 9, a plurality of sensor portions 1 and an electrode portion 2 corresponding to each sensor portion 1 are formed on a silicon semiconductor substrate 3 on an upper surface. To form a wafer. Thereafter, the semiconductor substrate 3 is separated by dicing into portions where the individual sensor portions 1 and the corresponding electrode portions 2 are formed, thereby forming a plurality of semiconductor chips 4.
[0005]
Next, in a second manufacturing process shown in FIG. 10, the semiconductor chip 4 having a rectangular parallelepiped shape is fixed to the chip mounting portion 6 of the package 5 made of ceramics or the like with an adhesive 7. The package 5 has a rectangular flat plate-shaped first package member 8 in which a chip mounting portion 6 is formed at the center of the upper surface, and hermetically seals the upper surface of the first package member 8 so as to surround the entire periphery of the chip mounting portion 6. And a side surface from the upper surface of the second package member 9 corresponding to the electrode portion 2 of the semiconductor chip 4, and further, a side surface and a lower surface edge of the first package member 8. The connecting conductor member 10 provided over the portion and the upper end surface 11 on the upper surface side of the second package member 9 of the connecting conductor member 10 are hermetically provided on the second package member 9 and the like so as to expose the semiconductor. A chip 4 and a third rectangular frame-shaped package member 14 formed so that the cover fixing surface 13 on the upper surface thereof is higher than the bonding wires 12 to be bonded in the next step. It is.
[0006]
Next, in a third manufacturing step shown in FIG. 11, the exposed upper end surface 11 of the connection conductor member 10 and the corresponding one of the electrode portions 2 of the semiconductor chip 4 are connected by bonding a bonding wire 12.
[0007]
Next, in a fourth manufacturing process shown in FIG. 12, a plate-shaped light-transmitting cover is provided on the cover fixing surface 13 of the third package member 14 so as to cover the sensor unit 1 with a hollow portion 15 provided therebetween. The semiconductor device 18 is formed by hermetically fixing 16 with an adhesive 17.
[0008]
Further, the semiconductor device 18 formed as described above is mounted on a mounting board 19 by mounting a first package on a pad 20 disposed at a mounting position on the upper surface of the mounting board 19 as shown in FIG. This is performed by soldering 22 the lower end surface 21 of the connection conductor member 10 provided on the lower surface edge of the member 8.
[0009]
However, in the above-described conventional technique, the semiconductor substrate 3 in a wafer state is cut into individual semiconductor chips 4 by dicing, and thereafter, the semiconductor substrate 3 is fixed to the chip mounting portion 6 of the package 5, and the light-transmitting cover 16 is further hermetically fixed. Sealing. Then, the above-mentioned cutting waste at the time of dicing, dust floating in a clean room when the semiconductor chip 4 is fixed to the package 5, dust generated from each member, and the like adhere to the sensor unit 1, and the semiconductor device 18 This may cause defects such as black defects and reduce the product yield. For this reason, there is a strong demand for reducing the attachment of cutting waste and dust to the sensor unit 1, reducing the device failure, and improving the product yield associated therewith.
[0010]
[Problems to be solved by the invention]
The present invention has been made in view of the above situation, and its purpose is to reduce the adhesion of cutting waste and dust to the sensor portion, thereby reducing device defects and improving product yield. It is an object of the present invention to provide a semiconductor device and a method for manufacturing the same.
[0011]
[Means for Solving the Problems]
The present invention provides a semiconductor device and a method of manufacturing the same, comprising: a semiconductor substrate having a sensor portion provided on an upper surface thereof; a cover fixing portion provided on the semiconductor substrate so as to surround the entire periphery of the sensor portion; A light-transmitting cover fixed so as to cover and form a hollow portion above the sensor portion, and bonding provided corresponding to the sensor portion at a position outside the fixed portion of the light-transmitting cover. With an electrode, characterized in that the lower surface of the semiconductor substrate is used as a mounting surface,
Further, at the time of mounting, the mounting surface of the lower surface of the semiconductor substrate is fixed on a mounting substrate, and the bonding electrode is connected to a bonding pad of the mounting substrate by a bonding wire,
Also, forming a sensor portion and an electrode portion corresponding to the sensor portion on the surface of the semiconductor substrate, fixing a bump on the electrode portion, and applying an insulating member so as to embed the bump, the insulating member, Cutting off to a predetermined thickness, fixing a light-transmitting cover on the insulating member having the predetermined thickness so as to form a hollow portion between the sensor portion and the electrode, Cutting the light transmissive cover, insulating member, and bumps on a portion so that a bonding surface is formed on the bumps.
Further, after forming a plurality of sets of sensor portions and corresponding electrode portions on the surface of the semiconductor substrate, fixing a bump on each of the electrode portions, and applying an insulating member so as to embed the bumps, A step of cutting off the insulating member on the entire surface of the semiconductor substrate so as to have a predetermined thickness, and forming a hollow portion between the sensor unit and a light-transmitting cover on the insulating member having the predetermined thickness. Fixing the light-transmitting cover, the insulating member, and the bump on the electrode portion so that a bonding surface is formed on the bump; and bonding the bonding surface to the bump. After forming, the method comprises the step of separating into individual devices having the sensor unit,
Further, the method is characterized in that the application of the insulating member is performed by transfer.
[0012]
BEST MODE FOR CARRYING OUT THE INVENTION
A semiconductor device having an image sensor such as a CMOS sensor or a CCD and a method of manufacturing the same according to an embodiment of the present invention will be described below with reference to FIGS. 1 is a sectional view of a semiconductor device, FIG. 2 is a sectional view showing a first manufacturing step, FIG. 3 is a sectional view showing a second manufacturing step, and FIG. 4 is a sectional view showing a third manufacturing step. FIG. 5 is a cross-sectional view showing a fourth manufacturing step, FIG. 6 is a cross-sectional view showing a fifth manufacturing step, and FIG. 7 shows a semiconductor device fixed to a mounting position of a mounting substrate. FIG. 8 is a cross-sectional view illustrating a state in which the semiconductor device is mounted on a mounting board.
[0013]
In FIG. 1, a semiconductor device 31 has a sensor section 34 provided at a center portion of a square upper surface of a silicon semiconductor substrate 32 so that a sensing surface 33 faces upward. A plurality of electrode portions 35 corresponding to the sensor portion 34 are provided in a peripheral portion of the upper portion of the semiconductor substrate 32 outside the sensor portion 34, and a bonding electrode 36 electrically connected to the electrode portion 35 is provided on each electrode portion 35. Is provided. Further, a rectangular frame portion 37 made of an insulating material embeds the bonding electrode 36 in a state where the bonding surface 38 is exposed on the upper surface of the peripheral portion of the semiconductor substrate 32 on which the electrode portions 35 are provided. , Is provided so as to surround the sensor section 34 over the entire circumference.
[0014]
Further, the corner frame 37 is provided with a cover fixing portion 39 projecting upward so as to form a bank along the inner edge at an inner portion of the upper surface where the bonding surface 38 of the bonding electrode 36 is exposed. On the cover fixing portion 39, a flat light-transmitting cover 41 is hermetically fixed so as to cover the sensor portion 34 with a hollow portion 40 provided therebetween.
[0015]
The manufacturing process of such a semiconductor device 31 is as follows.
[0016]
First, in the first manufacturing process shown in FIG. 2, the wafer-shaped silicon semiconductor substrate 32 is defined in each of the substantially square chip forming regions 42 so as to indicate the division position by a cutting line A shown by a two-dot chain line. Then, the sensor section 34 is formed at the center of the upper surface of each chip forming region 42 so that the sensing surface 33 on the upper surface faces upward. Further, a plurality of electrode portions 35 made of aluminum corresponding to the sensor portions 34 are provided in a peripheral portion of the upper part of the semiconductor substrate 32 outside the sensor portions 34 in each chip formation region 43. Subsequently, a gold bump 43 having a height equal to or higher than a predetermined height is fixed on each electrode portion 35.
[0017]
Next, in a second manufacturing process shown in FIG. 3, an insulating member 44 made of, for example, an adhesive that is broken by a specific ultraviolet ray is transferred by a predetermined process so as to embed each bump 43 and surround the entire periphery of the sensor unit 34. Is applied so that the height is not less than the height. At this time, only the bump 43 is covered without covering the sensor section 34 with the insulating member 44.
[0018]
Next, in the third manufacturing process shown in FIG. 4, the processing including the processing of the upper end portion of the bump 43 is performed so that the height of all the insulating members 44 in each chip forming region 42 becomes a predetermined height. Then, the upper surface of the insulating member 44 is flattened. Then, on the flat upper surface of the processed insulating member 44, the flat light-transmitting cover 41 is airtightly fixed over the entire chip forming region 42. Thereby, the sensor section 34 is covered with the light transmissive cover 41 so that the hollow section 40 is provided therebetween, and the sensor section 34 is sealed.
[0019]
Next, in a fourth manufacturing process shown in FIG. 5, the light transmissive cover 41 in the peripheral portion outside the sensor section 34 above the bump 43, the bump 43 below the bump 43, and the insulating member 44 are cut out. . As a result of this removal, a square frame portion 37 surrounding the sensor portion 34 in each chip forming region 42 is formed, and the bonding surface 38 of the bonding electrode 36 formed by the bump 43 is exposed on the outer surface of the upper surface of the square frame portion 37, A cover fixing portion 39 to which the light transmissive cover 41 is fixed is provided on the inner portion of the upper surface so as to protrude upward along the inner edge.
[0020]
Next, in a fifth manufacturing process shown in FIG. 6, the semiconductor substrate 32 and the square frame portion 37 provided by cutting the insulating member 44 on the upper surface thereof are cut into the cutting line A by dicing with a diamond saw (not shown). The semiconductor device 31 is cut and separated along the chip forming regions 42 along the individual lines.
[0021]
The mounting of the semiconductor device 31 formed through the above-described manufacturing process is performed as follows. That is, first, as shown in FIG. 7, the semiconductor device 31 is fixed to the mounting position of the mounting substrate 45 with the adhesive 47 at the mounting surface 46 on the lower surface thereof. Reference numeral 48 denotes a bonding pad provided near the mounting position of the semiconductor device 31 on the mounting board 45, corresponding to the electrode portion 35 of the semiconductor device 31.
[0022]
Then, as shown in FIG. 8, a bonding wire 49 is attached to the bonding surface 38 of each bonding electrode 36 of the semiconductor device 31 fixed to the mounting substrate 45 and the upper surface of each bonding pad 48 of the mounting substrate 45 corresponding thereto. Are bonded, and the mounting of the semiconductor device 31 on the mounting board 45 is completed.
[0023]
As described above, in the above-described semiconductor device 31, after the light transmissive cover 41 is hermetically fixed and sealed, the light transmissive cover 41, the bumps 43, and the insulating members 44 are cut out, and the dicing is performed. Since the individual devices are cut and separated, there is no sticking to the sensor unit 34 of cutting debris at the time of cutting or dicing or dust floating in a clean room in a subsequent process, and the black defect of the semiconductor device 31 is reduced. And the like, the number of device defects is reduced, and the product yield is improved.
[0024]
【The invention's effect】
As is clear from the above description, according to the present invention, there is less danger that cutting debris, dust and the like will adhere to the sensor portion, and there are effects such as reduction of device defects and improvement of product yield.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view showing a first manufacturing step of one embodiment of the present invention.
FIG. 3 is a cross-sectional view showing a second manufacturing step of one embodiment of the present invention.
FIG. 4 is a cross-sectional view showing a third manufacturing step of the embodiment of the present invention.
FIG. 5 is a sectional view showing a fourth manufacturing step of the embodiment of the present invention.
FIG. 6 is a cross-sectional view showing a fifth manufacturing step of one embodiment of the present invention.
FIG. 7 is a cross-sectional view showing a state where the semiconductor device according to the embodiment of the present invention is fixed to a mounting position of a mounting substrate.
FIG. 8 is a cross-sectional view showing a state where the semiconductor device according to one embodiment of the present invention is mounted on a mounting board.
FIG. 9 is a cross-sectional view showing a first manufacturing step in the related art.
FIG. 10 is a cross-sectional view showing a second manufacturing step in the related art.
FIG. 11 is a sectional view showing a third manufacturing step in the conventional technique.
FIG. 12 is a sectional view showing a fourth manufacturing step in the conventional technique.
FIG. 13 is a cross-sectional view showing a state in which a semiconductor device according to a conventional technique is mounted on a mounting board.
[Explanation of symbols]
32 semiconductor substrate 34 sensor part 35 electrode part 36 bonding electrode 38 bonding surface 39 cover fixing part 40 hollow part 41 light transmitting cover 43 bump 44 insulating member 45 mounting substrate 46 mounting surface 48 bonding pad 49 bonding wire

Claims (5)

A semiconductor substrate having a sensor portion provided on an upper surface thereof, a cover fixing portion provided on the semiconductor substrate so as to surround the entire periphery of the sensor portion, and a hollow portion between the sensor fixing portion and the cover fixing portion. A light-transmitting cover fixed so as to cover the light-transmitting cover, and a bonding electrode provided outside the fixed portion of the light-transmitting cover corresponding to the sensor portion. A semiconductor device, which is used as a mounting surface. 2. The semiconductor device according to claim 1, wherein at the time of mounting, a mounting surface of the lower surface of the semiconductor substrate is fixed on a mounting substrate, and the bonding electrode is connected to a bonding pad of the mounting substrate by a bonding wire. Forming a sensor portion and a corresponding electrode portion on the surface of the semiconductor substrate, fixing a bump on the electrode portion, and applying an insulating member so as to embed the bump; Cutting off so as to have a predetermined thickness, fixing a light-transmitting cover on the insulating member having a predetermined thickness so as to form a hollow portion between the sensor and the sensor, Removing the light-transmitting cover, the insulating member, and the bumps so that a bonding surface is formed on the bumps. Forming a plurality of pairs of sensor portions and corresponding electrode portions on the surface of the semiconductor substrate, fixing bumps on the individual electrode portions, and applying an insulating member so as to embed the bumps; A step of cutting off the entire surface of the insulating member so as to have a predetermined thickness, and forming a hollow portion between the sensor portion and a light-transmitting cover on the predetermined thickness of the insulating member. Fixing the light-transmitting cover, insulating member, and bump on the electrode portion so that a bonding surface is formed on the bump; and forming a bonding surface on the bump. And then separating the individual devices having the sensor unit into individual devices. 5. The method for manufacturing a semiconductor device according to claim 3, wherein the application of the insulating member is performed by transfer.

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