JP2003209078A - Foam plastic sheet for polishing and manufacturing method therefor - Google Patents
Foam plastic sheet for polishing and manufacturing method thereforInfo
- Publication number
- JP2003209078A JP2003209078A JP2002006365A JP2002006365A JP2003209078A JP 2003209078 A JP2003209078 A JP 2003209078A JP 2002006365 A JP2002006365 A JP 2002006365A JP 2002006365 A JP2002006365 A JP 2002006365A JP 2003209078 A JP2003209078 A JP 2003209078A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- sheet
- plastic
- raw material
- carbon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 94
- 239000006260 foam Substances 0.000 title claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000002985 plastic film Substances 0.000 title abstract description 6
- 229920003023 plastic Polymers 0.000 claims abstract description 20
- 239000004033 plastic Substances 0.000 claims abstract description 20
- 239000002994 raw material Substances 0.000 claims abstract description 12
- 239000004088 foaming agent Substances 0.000 claims description 14
- 239000002984 plastic foam Substances 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract description 20
- 239000011347 resin Substances 0.000 abstract description 13
- 229920005989 resin Polymers 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 11
- 239000001569 carbon dioxide Substances 0.000 abstract description 10
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract description 10
- 239000004433 Thermoplastic polyurethane Substances 0.000 abstract description 4
- 229920001971 elastomer Polymers 0.000 abstract description 4
- 239000000806 elastomer Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 4
- 229920002803 thermoplastic polyurethane Polymers 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 13
- 239000002002 slurry Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910000831 Steel Inorganic materials 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- -1 polypropylene Polymers 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- QLZJUIZVJLSNDD-UHFFFAOYSA-N 2-(2-methylidenebutanoyloxy)ethyl 2-methylidenebutanoate Chemical compound CCC(=C)C(=O)OCCOC(=O)C(=C)CC QLZJUIZVJLSNDD-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 229920001893 acrylonitrile styrene Polymers 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 1
- 229920006244 ethylene-ethyl acrylate Polymers 0.000 description 1
- 239000005042 ethylene-ethyl acrylate Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000010097 foam moulding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- SCUZVMOVTVSBLE-UHFFFAOYSA-N prop-2-enenitrile;styrene Chemical compound C=CC#N.C=CC1=CC=CC=C1 SCUZVMOVTVSBLE-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体、各種メモ
リーハードディスク用基板等の研磨に使用される研磨用
シートおよびその製造方法に関し、その中でも特に層間
絶縁膜や金属配線等の、半導体のデバイスウエハの表面
平坦化加工に好適に用いられる研磨用シートおよびその
製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing sheet used for polishing semiconductors, substrates for various memory hard disks, etc., and a method for manufacturing the same, and in particular, semiconductor device wafers such as interlayer insulating films and metal wirings. The present invention relates to a polishing sheet which is preferably used for the surface flattening process and a manufacturing method thereof.
【0002】[0002]
【従来の技術】半導体のデバイスウエハの表面平坦化加
工に用いられる代表的なプロセスである化学的機械的研
磨法(CMP)の一例を図1に示す。例えば、研磨スラ
リーを滴下しながら、半導体ウエハを回転、研磨パッド
表面に押しあてることにより、研磨対象物の表面を高精
度に平坦化するというものである。研磨条件はもとよ
り、各構成部材の特性が、研磨後の平坦性、ウエハ面内
の均一性等に影響を及ぼす。その中でも、研磨パッド
は、研磨性能に大きな影響を与える一構成要素であり、
研磨パッドとして用いられる発泡シートの発泡状態、つ
まり気泡形状、気泡径等は重要な研磨因子である。2. Description of the Related Art FIG. 1 shows an example of a chemical mechanical polishing method (CMP) which is a typical process used for surface flattening of a semiconductor device wafer. For example, while dropping a polishing slurry, a semiconductor wafer is rotated and pressed against the surface of a polishing pad to flatten the surface of an object to be polished with high accuracy. Not only the polishing conditions, but also the characteristics of each component affect the flatness after polishing, the uniformity within the wafer surface, and the like. Among them, the polishing pad is one component that greatly affects the polishing performance,
The foaming state of the foamed sheet used as the polishing pad, that is, the bubble shape, the bubble diameter, and the like are important polishing factors.
【0003】従来、CMPプロセスにおいては、例えば
ロデール社製の熱硬化型ポリウレタンをマトリックス樹
脂とする、独立発泡タイプの研磨パッド(商品名:IC
1000)等が、標準的に使用されてきた。研磨前のド
レッシング、および研磨の進行に伴う研磨パッド表面の
摩耗に伴って、空隙が開口し、研磨スラリーの保持能力
を発現するというものであった。このタイプの研磨パッ
ドは目詰まりし易く、研磨枚数の増加に伴い、研磨速度
を始めとする研磨性能が変動、あるいは低下し易いもの
であった。所望の研磨性能が得られなくなった段階で研
磨パッドを交換しなければならないが、パッドの交換
は、熟練者でもかなりの時間を要する作業であり、スル
ープットを低下させる一因となっており、ライフの長い
パッドの出現が大望されてきた。Conventionally, in the CMP process, for example, an independent foaming type polishing pad (trade name: IC, using a thermosetting polyurethane manufactured by Rodel Co. as a matrix resin).
1000) and the like have been used as standard. According to the dressing before the polishing and the abrasion of the surface of the polishing pad with the progress of the polishing, the voids are opened and the retaining ability of the polishing slurry is developed. This type of polishing pad was apt to be clogged, and the polishing performance such as the polishing rate was likely to change or deteriorate with the increase in the number of polishing. The polishing pad must be replaced when the desired polishing performance is no longer obtained, but replacement of the pad is a task that requires a considerable amount of time even for a skilled worker, and this is one of the causes of lowering the throughput. The emergence of long pads has long been awaited.
【0004】また研磨パッド内における密度分布に起因
する部分的な研磨性能ばらつきが、ウエハ面内の不均一
性の一因となり、例えば密度分布の広いロットでは、所
望の平坦性が得られないという問題があった。この密度
分布は、研磨パッド面内のみならず、厚み方向において
も生じるため、研磨の進行に伴う研磨パッド自身の摩耗
によっても、研磨性能ばらつきが発現する可能性を従来
研磨パッドは有していた。さらには、研磨パッドを構成
するマトリックス樹脂が、例えば熱硬化型ポリウレタン
等である従来の研磨パッドは、使用前のドレッシング処
理に長時間を要する点も、スループットを低下させる一
因であった。Further, the partial polishing performance variation due to the density distribution in the polishing pad is one of the causes of the non-uniformity in the wafer surface. For example, in a lot having a wide density distribution, desired flatness cannot be obtained. There was a problem. Since this density distribution occurs not only in the polishing pad surface but also in the thickness direction, the conventional polishing pad has a possibility that variations in polishing performance may occur due to abrasion of the polishing pad itself as the polishing progresses. . Further, the conventional polishing pad in which the matrix resin forming the polishing pad is, for example, thermosetting polyurethane or the like requires a long time for the dressing process before use, which is also a cause of lowering the throughput.
【0005】エレクトロニクス業界の最近の著しい発展
により、トランジスター、IC、LSI、超LSIと進
化してきており、これら半導体素子における回路の集積
度が急激に増大するにつれて、半導体デバイスのデザイ
ンルールは、年々微細化が進み、デバイス製造プロセス
での焦点深度は浅くなり、パターン形成面の平坦性はま
すます厳しくなってきている。それに伴い、研磨パッド
に求められる研磨性能レベルも高まるにつれて、従来研
磨パッドの性能ばらつきの問題が顕在化してきた。With the recent remarkable development of the electronics industry, it has evolved into transistors, ICs, LSIs, and VLSIs. As the degree of integration of circuits in these semiconductor elements has rapidly increased, the design rules of semiconductor devices are becoming finer year by year. As the device becomes more and more popular, the depth of focus in the device manufacturing process has become shallower, and the flatness of the pattern formation surface has become more and more strict. Along with this, as the level of polishing performance required of polishing pads has increased, the problem of performance variation of conventional polishing pads has become apparent.
【0006】[0006]
【発明が解決しようとする課題】本発明は、従来の研磨
パッドの、例えばライフや研磨性能ばらつきといった問
題を解決するためのもので、その目的とするところは目
詰まりしにくく、長時間安定した研磨性能を発現する、
同方向に配列した長気泡を有する研磨用プラスチック発
泡シートおよびその製造方法を提供することにある。DISCLOSURE OF THE INVENTION The present invention is to solve the problems of the conventional polishing pad, such as life and variations in polishing performance, and its object is to prevent clogging and to stabilize for a long time. Develops polishing performance,
An object of the present invention is to provide a plastic foam sheet for polishing having long cells arranged in the same direction and a method for manufacturing the same.
【0007】[0007]
【課題を解決するための手段】本発明者らは、前記従来
の問題点を鑑み、鋭意検討を重ねた結果、以下の手段に
より、本発明を完成するに至った。すなわち本発明は、
(1)同方向に配列した長気泡を有することを特徴とす
る研磨用プラスチック発泡シート、(2)短軸長さが1
μm以上60μm未満である第(1)項記載の研磨用プ
ラスチック発泡シート、(3)原料プラスチックと発泡
剤を混合する工程と、発泡シートを延伸し、気泡の配列
方向および形状を制御する工程を有することを特徴とす
る、第(1)又は(2)項記載の研磨用プラスチック発
泡シートの製造方法、(4)発泡剤である不活性ガスを
超臨界状態において原料プラスチックと混合することを
特徴とする、第(3)項記載の研磨用プラスチック発泡
シートの製造方法、である。DISCLOSURE OF THE INVENTION The inventors of the present invention have made extensive studies in view of the problems of the prior art, and as a result, have accomplished the present invention by the following means. That is, the present invention is
(1) A plastic foam sheet for polishing characterized by having long cells arranged in the same direction, (2) a minor axis length of 1
The plastic foam sheet for polishing according to item (1), which has a size of at least μm and less than 60 μm, (3) a step of mixing the raw material plastic and a foaming agent, and a step of stretching the foam sheet to control the array direction and shape of the bubbles. The method for producing a plastic foam sheet for polishing according to (1) or (2), characterized in that (4) an inert gas as a foaming agent is mixed with the raw material plastic in a supercritical state. The method for producing a plastic foam sheet for polishing according to item (3).
【0008】[0008]
【発明の実施の形態】本発明におけるシートとは、一般
的なフィルム、シートおよびボードの全てを指す。本発
明の研磨用プラスチック発泡シートを、図2および図3
を用いて説明する。図2は長気泡の配列方向に沿ったシ
ート断面、および図3は長気泡の配列方向に垂直なシー
ト断面の一例である。なお本発明における長気泡とは、
配列方向に沿ったシート断面における気泡の外形が楕円
であり、かつ単位面積あたりの短軸の平均長さ(以下、
短軸平均長さと略記する)に対する、単位面積あたりの
長軸の平均長さ(以下、長軸平均長さと略記する)の
比、いわゆるアスペクト比が1.3以上である気泡と定
義する。BEST MODE FOR CARRYING OUT THE INVENTION The sheet in the present invention refers to all general films, sheets and boards. 2 and 3 show the plastic foam sheet for polishing of the present invention.
Will be explained. FIG. 2 is an example of a sheet cross section along the arrangement direction of long bubbles, and FIG. 3 is an example of a sheet cross section perpendicular to the arrangement direction of long bubbles. The long bubbles in the present invention,
The outer shape of the bubbles in the sheet cross section along the arrangement direction is an ellipse, and the average length of the minor axis per unit area (hereinafter,
The ratio of the average length of the long axis per unit area (hereinafter abbreviated as the long axis average length) to the short axis average length (hereinafter, abbreviated as the long axis average length), that is, the so-called aspect ratio is defined as bubbles.
【0009】以下、特に断りがない場合の記述は、配列
方向に沿ったシート断面に関するものである。本発明の
研磨用プラスチック発泡シートは、研磨の際、配列方向
に沿った流れが生じるため、研磨面においてスラリーが
滞留し難い。そのため、研磨屑が排出されやすく、目詰
まりしにくい。結果として、長時間にわたり安定した研
磨性能を発現することが可能となり、研磨パッドのライ
フが長くなる。本発明の研磨用プラスチック発泡シート
の短軸平均長さは、好ましくは1μm以上60μm未
満、更に好ましくは5μm以上50μm未満、最も好ま
しくは10μm以上40μm未満である。60μm以上
では、研磨スラリーの保持能力が著しく低下し、研磨速
度が低下するので好ましくない。逆に1μm未満では、
長気泡といえども研磨屑等により目詰まりし易く、ライ
フが短くなるために好ましくない。Hereinafter, the description unless otherwise specified relates to the sheet cross section along the arrangement direction. In the plastic foam sheet for polishing of the present invention, during polishing, a flow occurs along the arrangement direction, so that the slurry is unlikely to stay on the polishing surface. Therefore, polishing dust is easily discharged and clogging is less likely to occur. As a result, stable polishing performance can be exhibited for a long time, and the life of the polishing pad is extended. The minor axis average length of the plastic foam sheet for polishing of the present invention is preferably 1 μm or more and less than 60 μm, more preferably 5 μm or more and less than 50 μm, and most preferably 10 μm or more and less than 40 μm. When it is 60 μm or more, the ability to retain the polishing slurry is significantly reduced and the polishing rate is reduced, which is not preferable. Conversely, if it is less than 1 μm,
Even long bubbles are not preferable because they tend to be clogged with polishing debris and the life is shortened.
【0010】本発明における研磨用プラスチック発泡シ
ートの構成材料の一つである原料プラスチックは特に限
定しないが、ポリウレタンをはじめとする熱可塑性エラ
ストマー、ポリスチレン、ポリエステル、ポリプロピレ
ン、ナイロン、ポリ塩化ビニル、ポリ塩化ビニリデン、
ポリブテン、ポリアセタール、ポリフェニレンオキシ
ド、ポリビニルアルコール、ポリメチルメタクリレー
ト、ポリサルホン、ポリエーテルサルホン、ポリエーテ
ルケトン、ポリエーテルエーテルケトン、ポリカーボネ
ート、ポリアリレート、芳香族系ポリサルホン樹脂、ポ
リアミド樹脂、ポリイミド樹脂、フッ素樹脂、エチレン
−プロピレン樹脂、エチレン−エチルアクリレート樹
脂、アクリル樹脂、ノルボルネン系樹脂、スチレン共重
合体(例えば、ビニルポリイソプレン−スチレン共重合
体、ブタジエン−スチレン共重合体、アクリロニトリル
−スチレン共重合体、アクリロニトリル−ブタジエン−
スチレン共重合体等)、あるいは天然ゴム、合成ゴム等
が好ましい。これらは単独で用いても良いし、混合ある
いは共重合させてもよい。なお発泡成形に対する適性と
研磨性能を兼ね備えた材料という点から、さらに好まし
くは熱可塑性ポリウレタンエラストマー、ナイロン、ス
チレン共重合体、ポリメチルメタクリレート、フッ素樹
脂、ポリスチレン、ポリエステル、ポリプロピレン等で
あり、最も好ましくは、これらを混合あるいは共重合さ
せたプラスチックである。The raw material plastic, which is one of the constituent materials of the foamed plastic sheet for polishing in the present invention, is not particularly limited, but thermoplastic elastomers such as polyurethane, polystyrene, polyester, polypropylene, nylon, polyvinyl chloride, polychlorinated. Vinylidene,
Polybutene, polyacetal, polyphenylene oxide, polyvinyl alcohol, polymethylmethacrylate, polysulfone, polyethersulfone, polyetherketone, polyetheretherketone, polycarbonate, polyarylate, aromatic polysulfone resin, polyamide resin, polyimide resin, fluorine resin, Ethylene-propylene resin, ethylene-ethyl acrylate resin, acrylic resin, norbornene-based resin, styrene copolymer (for example, vinyl polyisoprene-styrene copolymer, butadiene-styrene copolymer, acrylonitrile-styrene copolymer, acrylonitrile- Butadiene
Styrene copolymer, etc.), natural rubber, synthetic rubber, etc. are preferable. These may be used alone, or may be mixed or copolymerized. Incidentally, from the viewpoint of a material having both suitability for foam molding and polishing performance, more preferably thermoplastic polyurethane elastomer, nylon, styrene copolymer, polymethylmethacrylate, fluororesin, polystyrene, polyester, polypropylene and the like, most preferably , A plastic obtained by mixing or copolymerizing these.
【0011】本発明の原料プラスチックと発泡剤を混合
する工程は特に限定しないが、例えば、押出機を用い
て、溶融混練した原料プラスチック中に発泡剤を注入、
混合する方式が挙げられる。発泡シートを延伸し、気泡
の配列方向および形状を制御する工程は特に限定しない
が、制御の簡便さ、製品品質の安定性、経済性等の点か
ら、例えばスチールベルト、ロール又はそれらを組み合
わせた方式が挙げられる。The step of mixing the raw material plastic of the present invention with the foaming agent is not particularly limited, but for example, an extruder is used to inject the foaming agent into the melt-kneaded raw material plastic.
The method of mixing is mentioned. The step of stretching the foamed sheet and controlling the cell array direction and shape is not particularly limited, but from the viewpoint of easiness of control, stability of product quality, economy, etc., for example, a steel belt, a roll or a combination thereof is used. There is a method.
【0012】本発明の発泡剤は特に限定しない。例えば
従来の化学発泡剤、物理発泡剤をはじめ、あらゆるタイ
プの発泡剤を使用することができる。物理発泡剤として
はアルゴン、プロパン、ブタン、二酸化炭素、窒素等
の、プラスチックに対する不活性ガスが単独、又は2種
以上を組み合わせて用いられる。これらのガスは通常、
プラスチックとの相溶性が低いために混ざりにくいの
で、超臨界状態でプラスチックと混合することが好まし
い。超臨界状態とは、臨界温度、臨界圧力以上の状態を
指し、例えば二酸化炭素の場合、31℃以上で7.3M
Pa以上である。超臨界状態では、液体状態よりも粘性
が低く、拡散速度が速いという特性を有し、また気体状
態よりも密度が大きいことから、大量かつ速やかにプラ
スチックに溶解させることができるので好ましい。The foaming agent of the present invention is not particularly limited. For example, all types of foaming agents can be used, including conventional chemical foaming agents and physical foaming agents. As the physical foaming agent, an inert gas for plastics such as argon, propane, butane, carbon dioxide and nitrogen is used alone or in combination of two or more kinds. These gases are usually
Since it has low compatibility with plastic and is difficult to mix, it is preferable to mix with plastic in a supercritical state. The supercritical state refers to a state at a critical temperature or a critical pressure or higher. For example, in the case of carbon dioxide, 7.3 M at 31 ° C. or higher.
Pa or higher. In the supercritical state, the viscosity is lower than that in the liquid state, the diffusion rate is faster, and the density is higher than that in the gas state, so that it can be dissolved in a large amount and quickly in the plastic, which is preferable.
【0013】[0013]
【実施例】以下に、実施例により本発明を具体的に説明
するが、本発明は、実施例の内容になんら限定されるも
のではない。
<発泡シート化/研磨パッド作製>押出機の中央部に、
発泡剤を注入するためのノズルを取り付けた第一押出機
(バレル径50mm)に第二押出機(バレル径65m
m)を連結し、第二押出機の先端には、リップ幅750
mmのTダイを取り付けた。Tダイを出た後のプラスチ
ックシートを延伸、冷却した後、トリミング、切断によ
り枚葉シートに加工、その後、直径600mmの円盤状
に打ち抜き、研磨パッドサンプルを作製した。なお、発
泡剤として二酸化炭素を使用した。ボンベより取り出し
た二酸化炭素を、熱交換機を通して液化した後に、プラ
ンジャーポンプにより昇圧、ノズルを通して、押出機内
に定量供給した。EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to the contents of the examples. <Formation of foamed sheet / polishing pad> In the center of the extruder,
The second extruder (barrel diameter 65 m) is attached to the first extruder (barrel diameter 50 mm) equipped with a nozzle for injecting a foaming agent.
m) is connected, and a lip width of 750 is provided at the tip of the second extruder.
A mm T-die was attached. The plastic sheet after exiting the T-die was stretched and cooled, processed into a sheet by trimming and cutting, and then punched into a disc having a diameter of 600 mm to prepare a polishing pad sample. Carbon dioxide was used as a foaming agent. The carbon dioxide taken out from the bomb was liquefied through a heat exchanger, then pressurized by a plunger pump and supplied through the nozzle in a fixed amount into the extruder.
【0014】<研磨性能評価>被研磨物として、6イン
チのシリコンウエハ上に、電解メッキで10000Åの
Cuを製膜したものを準備した。研磨は定盤径600m
mの片面研磨機を用いた。研磨機の定盤には、研磨パッ
ドを両面テープで貼り付け、まずはイオン交換水を滴下
しながら、ダイヤモンドディスクにより研磨パッド表面
をドレッシングした後に、Cabot社製研磨スラリー
(商品名:iCue5003)を流しながら、1分間、
Cu膜を研磨した。<Evaluation of Polishing Performance> As an object to be polished, a 6-inch silicon wafer on which 10000 Å of Cu was formed by electrolytic plating was prepared. Polishing plate diameter 600m
m single-side polishing machine was used. A polishing pad is attached to the surface plate of the polishing machine with a double-sided tape, first, while the ion-exchanged water is dropped, the polishing pad surface is dressed with a diamond disk, and then a polishing slurry manufactured by Cabot (trade name: iCue5003) is poured. While 1 minute,
The Cu film was polished.
【0015】研磨条件としては、ウエハに加える荷重を
350g/cm2、定盤の回転数を70rpm、ウエハ
回転数を70rpm、研磨スラリーの流量を200ml
/minとした。研磨後のウエハを洗浄、乾燥後、4探
針シート抵抗測定機を用いて、Cu膜厚をウエハ面内で
49点測定し、研磨性能の指標として、平坦性、面内均
一性を従来パッドと比較した。また電子顕微鏡を用い
て、研磨後における研磨パッド表面の目詰まり状態を観
察した。As the polishing conditions, the load applied to the wafer is 350 g / cm 2 , the rotation number of the surface plate is 70 rpm, the rotation number of the wafer is 70 rpm, and the flow rate of the polishing slurry is 200 ml.
/ Min. After cleaning and drying the wafer after polishing, the Cu film thickness was measured at 49 points on the wafer surface using a 4-probe sheet resistance measuring machine, and flatness and in-plane uniformity were used as an index of polishing performance. Compared with. Further, the state of clogging of the polishing pad surface after polishing was observed using an electron microscope.
【0016】(実施例1)原料プラスチックとして熱可
塑性ポリウレタンエラストマー(大日精化製)を使用し
た。第一押出機中で、二酸化炭素と原料プラスチックを
混合した。混合ゾーンの樹脂圧力は25MPa、樹脂温
度は200℃であり、二酸化炭素は超臨界状態にあっ
た。なお、Tダイを出た後のプラスチックシートの延
伸、冷却にはスチールベルトを用いた
シート断面を、MD方向に沿って電子顕微鏡で観察した
結果、短軸平均長さは24μm、長軸平均長さは50μ
m、アスペクト比は2.1であった。Example 1 A thermoplastic polyurethane elastomer (manufactured by Dainichiseika) was used as a raw material plastic. Carbon dioxide and raw plastic were mixed in the first extruder. The resin pressure in the mixing zone was 25 MPa, the resin temperature was 200 ° C., and carbon dioxide was in the supercritical state. In addition, as a result of observing a sheet cross section using a steel belt for stretching and cooling of the plastic sheet after exiting the T-die with an electron microscope along the MD direction, the short-axis average length was 24 μm, and the long-axis average length was 24 μm. Is 50μ
m, the aspect ratio was 2.1.
【0017】(実施例2)スチールベルトを3本ロール
に変更した以外は、(実施例1)と同じ条件でシート化
し、シート断面を電子顕微鏡で観察した結果、短軸平均
長さは31μm、長軸平均長さは68μm、アスペクト
比は2.2であった。(Example 2) A sheet was formed into a sheet under the same conditions as in Example 1 except that the steel belt was changed to three rolls, and the cross section of the sheet was observed with an electron microscope. As a result, the short axis average length was 31 μm. The major axis average length was 68 μm, and the aspect ratio was 2.2.
【0018】(実施例3)原料プラスチックとして、熱
可塑性ポリウレタンエラストマー(大日精化製)とポリ
スチレン(エー・アンド・エム スチレン製)をブレン
ドしたものを使用した。第一押出機中で、二酸化炭素と
原料プラスチックを混合した。混合ゾーンの樹脂圧力は
26MPa、樹脂温度は210℃であり、二酸化炭素は
超臨界状態にあった。なお、Tダイを出た後のプラスチ
ックシートの延伸、冷却にはスチールベルトを用いた
シート断面を、MD方向に沿って電子顕微鏡で観察した
結果、短軸平均長さは19μm、長軸平均長さは51μ
m、アスペクト比は2.7であった。Example 3 As a raw material plastic, a blend of a thermoplastic polyurethane elastomer (manufactured by Dainichiseika) and polystyrene (manufactured by A & M Styrene) was used. Carbon dioxide and raw plastic were mixed in the first extruder. The resin pressure in the mixing zone was 26 MPa, the resin temperature was 210 ° C., and carbon dioxide was in the supercritical state. In addition, as a result of observing a sheet cross section using a steel belt for stretching and cooling of the plastic sheet after exiting the T die with an electron microscope along the MD direction, the short axis average length was 19 μm, and the long axis average length was 19 μm. It is 51μ
m, and the aspect ratio was 2.7.
【0019】(比較例1)延伸速度を調整した以外は
(実施例1)と同じ条件でシート化し、短軸平均長さ2
8μm、長軸平均長さ32μm、アスペクト比1.1の
発泡シートを得た。
(比較例2)研磨パッドとして、IC1000(ロデー
ル社製)を使用した。(Comparative Example 1) Sheets were formed under the same conditions as in (Example 1) except that the stretching speed was adjusted, and the short axis average length was 2
A foamed sheet having a size of 8 μm, a long axis average length of 32 μm and an aspect ratio of 1.1 was obtained. (Comparative Example 2) As a polishing pad, IC1000 (manufactured by Rodel) was used.
【0020】<評価結果>(実施例1)〜(実施例3)
は、(比較例1)および(比較例2)に対し、平坦性、
面内均一性がともに良好であった。またCu製膜ウエハ
を、(比較例1)では80枚程度研磨した段階で、また
(比較例2)では100枚程度研磨した段階で、それぞ
れ研磨パッド表面において部分的な目詰まりが観察され
はじめるとともに、研磨速度、面内均一性ともに低下し
始めたが、(実施例1)〜(実施例3)では、100枚
程度研磨した段階においても目詰まりは観察されず、研
磨速度、面内均一性の低下もみられなかった。なお(実
施例1)〜(実施例3)のドレッシングに要する時間
は、(比較例2)の2分の1以下であった。<Evaluation Results> (Example 1) to (Example 3)
In comparison with (Comparative Example 1) and (Comparative Example 2),
The in-plane uniformity was good. Further, at the stage of polishing about 80 Cu-formed wafers in (Comparative Example 1) and at the stage of polishing about 100 in (Comparative Example 2), partial clogging starts to be observed on the polishing pad surface. At the same time, both the polishing rate and the in-plane uniformity started to decrease, but in (Example 1) to (Example 3), no clogging was observed even after polishing about 100 sheets, and the polishing rate and in-plane uniformity There was no decrease in sex. In addition, the time required for the dressing of (Example 1) to (Example 3) was half or less that of (Comparative Example 2).
【0021】[0021]
【発明の効果】本発明の長気泡を有する研磨用プラスチ
ック発泡シートを研磨パッドに用いることにより、従来
の問題点であった目詰まり、および研磨性能ばらつき等
が改善される。その結果、安定した研磨性能が従来より
も長く得られるため、パッドの交換頻度を少なくするこ
とができ、研磨工程におけるスループットが向上する。
また、発泡剤である不活性ガスを超臨界状態において原
料プラスチックと混合した後にシート化するとともに、
延伸により気泡の配列方向および形状を制御すること
で、該研磨用プラスチック発泡シートを安定に生産性良
く製造することができる。EFFECT OF THE INVENTION By using the plastic foam sheet for polishing having long bubbles of the present invention for a polishing pad, clogging, variation in polishing performance and the like, which have been problems in the past, can be improved. As a result, stable polishing performance can be obtained for a longer time than in the conventional case, the frequency of pad replacement can be reduced, and throughput in the polishing process is improved.
In addition, in a supercritical state, an inert gas, which is a foaming agent, is mixed with raw material plastic to form a sheet,
By controlling the array direction and shape of the bubbles by stretching, the plastic foam sheet for polishing can be stably manufactured with good productivity.
【図1】 化学的機械的研磨法(CMP)の標準的なプ
ロセスの一例である。FIG. 1 is an example of a standard process of chemical mechanical polishing (CMP).
【図2】 本発明の、長気泡の配列方向に沿ったシート
断面の一例である。FIG. 2 is an example of a sheet cross section along the arrangement direction of long bubbles according to the present invention.
【図3】 本発明の、長気泡の配列方向に垂直なシート
断面の一例である。FIG. 3 is an example of a sheet cross section perpendicular to the arrangement direction of long bubbles according to the present invention.
1 半導体ウエハ 2 定盤 3 ドレッシングディスク 4 研磨スラリー 5 試料ホルダー 6 研磨パッド 7 回転軸 8 ウエハ固定用治具 9 ドレッシングディスクホルダー 10 スラリー供給用配管 11 長気泡 1 Semiconductor wafer 2 surface plate 3 dressing discs 4 Polishing slurry 5 Sample holder 6 polishing pad 7 rotation axis 8 Wafer fixing jig 9 Dressing disc holder 10 Slurry supply pipe 11 long bubbles
Claims (4)
特徴とする研磨用プラスチック発泡シート。1. A plastic foam sheet for polishing, which has long cells arranged in the same direction.
である請求項1記載の研磨用プラスチック発泡シート。2. The plastic foam sheet for polishing according to claim 1, wherein the short axis average length is 1 μm or more and less than 60 μm.
程と、発泡シートを延伸し、気泡の配列方向および形状
を制御する工程を有することを特徴とする、請求項1又
は2記載の研磨用プラスチック発泡シートの製造方法3. The polishing plastic according to claim 1, further comprising a step of mixing the raw material plastic and a foaming agent and a step of stretching the foamed sheet to control the array direction and shape of the bubbles. Foam sheet manufacturing method
おいて原料プラスチックと混合することを特徴とする、
請求項3記載の研磨用プラスチック発泡シートの製造方
法4. An inert gas as a foaming agent is mixed with a raw material plastic in a supercritical state,
The method for producing the plastic foam sheet for polishing according to claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002006365A JP2003209078A (en) | 2002-01-15 | 2002-01-15 | Foam plastic sheet for polishing and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002006365A JP2003209078A (en) | 2002-01-15 | 2002-01-15 | Foam plastic sheet for polishing and manufacturing method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003209078A true JP2003209078A (en) | 2003-07-25 |
Family
ID=27645158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002006365A Pending JP2003209078A (en) | 2002-01-15 | 2002-01-15 | Foam plastic sheet for polishing and manufacturing method therefor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003209078A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005007731A1 (en) * | 2003-07-16 | 2005-01-27 | Sekisui Chemical Co.,Ltd. | Foam sheet of crosslinked polyolefin resin, process for producing the same, and pressure-sensitive adhesive tape |
| JP2007161865A (en) * | 2005-12-13 | 2007-06-28 | Mitsubishi Plastics Ind Ltd | Method for producing porous body and porous body |
| JP2007245298A (en) * | 2006-03-16 | 2007-09-27 | Toyo Tire & Rubber Co Ltd | Polishing pad |
| JP2008546167A (en) * | 2005-02-18 | 2008-12-18 | ネオパッド テクノロジーズ コーポレイション | Customized polishing pad for CMP and method for making and using the same |
| JP2009226543A (en) * | 2008-03-24 | 2009-10-08 | Fujibo Holdings Inc | Polish pad |
| JP2011051072A (en) * | 2009-09-03 | 2011-03-17 | Fujibo Holdings Inc | Method for manufacturing polishing pad, and polishing pad |
| CN102781626A (en) * | 2010-03-24 | 2012-11-14 | 东洋橡胶工业株式会社 | Polishing pad |
| EP2842991A4 (en) * | 2012-04-27 | 2015-12-23 | Inoue Mtp Kk | Method for producing resin foam, and resin foam |
-
2002
- 2002-01-15 JP JP2002006365A patent/JP2003209078A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1320041C (en) * | 2003-07-16 | 2007-06-06 | 积水化学工业株式会社 | Foam sheet of crosslinked polyolefin resin, process for producing the same, and pressure-sensitive adhesive tape |
| WO2005007731A1 (en) * | 2003-07-16 | 2005-01-27 | Sekisui Chemical Co.,Ltd. | Foam sheet of crosslinked polyolefin resin, process for producing the same, and pressure-sensitive adhesive tape |
| US10494499B2 (en) | 2003-07-16 | 2019-12-03 | Sekisui Chemical Co., Ltd. | Crosslinked polyolefin-based resin foam sheet and process for producing the same as well as adhesive tape |
| US8715035B2 (en) | 2005-02-18 | 2014-05-06 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
| JP2008546167A (en) * | 2005-02-18 | 2008-12-18 | ネオパッド テクノロジーズ コーポレイション | Customized polishing pad for CMP and method for making and using the same |
| JP2007161865A (en) * | 2005-12-13 | 2007-06-28 | Mitsubishi Plastics Ind Ltd | Method for producing porous body and porous body |
| JP2007245298A (en) * | 2006-03-16 | 2007-09-27 | Toyo Tire & Rubber Co Ltd | Polishing pad |
| JP2009226543A (en) * | 2008-03-24 | 2009-10-08 | Fujibo Holdings Inc | Polish pad |
| JP2011051072A (en) * | 2009-09-03 | 2011-03-17 | Fujibo Holdings Inc | Method for manufacturing polishing pad, and polishing pad |
| CN102781626B (en) * | 2010-03-24 | 2016-01-20 | 东洋橡胶工业株式会社 | Polishing pad |
| US9314898B2 (en) | 2010-03-24 | 2016-04-19 | Toyo Tire & Rubber Co., Ltd. | Polishing pad |
| CN102781626A (en) * | 2010-03-24 | 2012-11-14 | 东洋橡胶工业株式会社 | Polishing pad |
| EP2842991A4 (en) * | 2012-04-27 | 2015-12-23 | Inoue Mtp Kk | Method for producing resin foam, and resin foam |
| US9499675B2 (en) | 2012-04-27 | 2016-11-22 | Inoac Corporation | Method for producing resin foam, and resin foam |
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