JP2003270654A - Liquid crystal display - Google Patents
Liquid crystal displayInfo
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- JP2003270654A JP2003270654A JP2002076907A JP2002076907A JP2003270654A JP 2003270654 A JP2003270654 A JP 2003270654A JP 2002076907 A JP2002076907 A JP 2002076907A JP 2002076907 A JP2002076907 A JP 2002076907A JP 2003270654 A JP2003270654 A JP 2003270654A
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- Prior art keywords
- liquid crystal
- pixel electrode
- display device
- crystal display
- image signal
- Prior art date
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Abstract
(57)【要約】
【課題】対向基板側のブラックマトリクスによって、画
素部分の開口率が低下していた。また、反射型の液晶パ
ネルを実現するために、透過型と比較して新しく反射膜
を形成しなければならず、構造が複雑になっていた。
【解決手段】複数の画像信号配線と、複数の走査信号配
線とを絶縁膜を介して交差して設け、この画像信号配線
と走査信号配線との交差部に、画素電極とこの画素電極
に画像信号を供給するスイッチング素子とを設け、前記
画素電極とこの画素電極に対向して設けられた対向電極
との間に液晶材料が保持されている液晶表示装置におい
て、前記画素電極の裏面側に前記絶縁膜を介して、前記
画素電極よりも前記画像信号配線側に張り出し、各画素
毎に分離された光反射性の帯状金属膜を設けた。
(57) [Summary] The aperture ratio of the pixel portion is reduced by the black matrix on the counter substrate side. Further, in order to realize a reflective liquid crystal panel, a new reflective film must be formed as compared with a transmissive liquid crystal panel, and the structure is complicated. A plurality of image signal wirings and a plurality of scanning signal wirings are provided so as to intersect with an insulating film interposed therebetween, and a pixel electrode and an image are formed on an intersection of the image signal wirings and the scanning signal wirings. A switching element for supplying a signal, and a liquid crystal display device in which a liquid crystal material is held between the pixel electrode and a counter electrode provided to face the pixel electrode; A light-reflective strip-shaped metal film that protrudes from the pixel electrode side to the image signal wiring side via an insulating film and is separated for each pixel is provided.
Description
【0001】[0001]
【発明の属する技術分野】本発明は液晶表示装置に関
し、特に各画素にスイッチング素子を設けたアクティブ
マトリクス方式の液晶表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly to an active matrix liquid crystal display device in which a switching element is provided in each pixel.
【0002】[0002]
【従来の技術】アクティブマトリクス方式の液晶表示装
置は、単純マトリクス方式と比べてコントラストが高
く、多階調表示特性に優れているため、カラー液晶表示
装置では欠かせない技術となっている。特に、スイッチ
ング素子として薄膜トランジスタを使用したアクティブ
マトリクス方式の液晶表示装置は、CRTと同等の画質
が得られるようになった。また、近年、カラー携帯電話
の普及等から屋外での良好な視認性、低消費消費電力の
特性を併せ持つ反射型、半透過型の液晶表示装置の需要
が拡大している。2. Description of the Related Art An active matrix type liquid crystal display device has a higher contrast than a simple matrix type liquid crystal display device and is excellent in multi-gradation display characteristics, and is therefore an essential technique for a color liquid crystal display device. In particular, an active matrix type liquid crystal display device using a thin film transistor as a switching element has come to obtain an image quality equivalent to that of a CRT. Further, in recent years, with the spread of color mobile phones and the like, there is an increasing demand for reflective and semi-transmissive liquid crystal display devices that have good visibility outdoors and low power consumption.
【0003】以下、図面を参照しながら、従来の半透過
型の液晶表示装置を説明する。図13は、従来の液晶表
示装置の一画素の拡大図、図14および図15はそれぞ
れ図13のA−A’線およびB−B’線の断面図であ
る。また、図16は図13の液晶表示装置の等価回路図
である。A conventional transflective liquid crystal display device will be described below with reference to the drawings. FIG. 13 is an enlarged view of one pixel of a conventional liquid crystal display device, and FIGS. 14 and 15 are sectional views taken along the lines AA ′ and BB ′ of FIG. 13, respectively. 16 is an equivalent circuit diagram of the liquid crystal display device of FIG.
【0004】図13、図14、図15、図16におい
て、5は逆スタガ型の薄膜トランジスタ、1は金属膜よ
りなる走査信号配線およびこの走査信号配線と同時に形
成される薄膜トランジスタのゲート電極(G)、2は金
属膜と透明導電膜の積層膜よりなる画像信号配線および
薄膜トランジスタ5のソース電極(S)、3は透明導電
膜よりなる透明画素電極、14は光反射機能を持つ金属
膜よりなる反射画素電極、6は薄膜トランジスタ5の半
導体膜、8は薄膜トランジスタ5のゲート絶縁膜、9は
絶縁性保護膜、15は絶縁性有機膜、10は液晶材料、
11は透明導電膜よりなる対向電極、7はブラックマト
リクス、7' はブラックマトリクスの開口部、12、1
3は透明ガラス基板である。In FIGS. 13, 14, 15, and 16, 5 is an inverted staggered thin film transistor, 1 is a scanning signal wiring made of a metal film, and a gate electrode (G) of the thin film transistor formed at the same time as this scanning signal wiring. Reference numeral 2 is an image signal wiring formed of a laminated film of a metal film and a transparent conductive film and the source electrode (S) of the thin film transistor 5, 3 is a transparent pixel electrode formed of a transparent conductive film, and 14 is a reflection formed of a metal film having a light reflecting function. Pixel electrode, 6 is a semiconductor film of the thin film transistor 5, 8 is a gate insulating film of the thin film transistor 5, 9 is an insulating protective film, 15 is an insulating organic film, 10 is a liquid crystal material,
11 is a counter electrode made of a transparent conductive film, 7 is a black matrix, 7'is an opening of the black matrix, 12, 1
3 is a transparent glass substrate.
【0005】ここで、反射画素電極14は透明画素電極
3の上部に絶縁性保護膜9および絶縁性有機膜15を介
して設けられており、画素中央部において前記絶縁膜を
除去した領域で透明画素電極3と接続された構造となっ
ている。Here, the reflective pixel electrode 14 is provided on the transparent pixel electrode 3 via the insulating protective film 9 and the insulating organic film 15, and is transparent in the region where the insulating film is removed in the central portion of the pixel. It has a structure connected to the pixel electrode 3.
【0006】また、図12において、Clc は透明画素
電極3および反射画素電極14と対向電極11との間の
液晶容量、Cs は透明画素電極3と隣接する走査信号配
線1’との間の付加容量である。Further, in FIG. 12, Clc is a liquid crystal capacitance between the transparent pixel electrode 3 and the reflective pixel electrode 14 and the counter electrode 11, and Cs is an addition between the transparent pixel electrode 3 and the adjacent scanning signal wiring 1 '. Capacity.
【0007】このアクティブマトリクス方式の半透過型
液晶表示装置によれば、走査信号配線1から供給される
走査信号によって逆スタガ型の薄膜トランジスタ5がス
イッチングされ、画像信号配線2の信号電圧をドレイン
(D)電極の延長である透明画素電極3および反射画素
電極14に印加することにより、透明画素電極3および
反射画素電極14と対向電極11との間に保持された液
晶材料10に電圧を印加し、画像の表示を行う。そし
て、反射画素電極14の領域が反射画像を表示し、反射
画素電極14の中央部の透過画素電極3の領域が透過画
像を表示する。According to this active matrix type transflective liquid crystal display device, the inverse stagger type thin film transistor 5 is switched by the scanning signal supplied from the scanning signal wiring 1, and the signal voltage of the image signal wiring 2 is drained (D). ) A voltage is applied to the liquid crystal material 10 held between the transparent pixel electrode 3 and the reflective pixel electrode 14 and the counter electrode 11 by applying to the transparent pixel electrode 3 and the reflective pixel electrode 14 which are extensions of the electrodes, Display the image. Then, the area of the reflective pixel electrode 14 displays a reflective image, and the area of the transmissive pixel electrode 3 at the center of the reflective pixel electrode 14 displays a transmissive image.
【0008】ここで、付加容量Cs は液晶材料10に印
加する電圧を一定期間保持するための電荷保持用の容量
である。Here, the additional capacitance Cs is a charge holding capacitance for holding the voltage applied to the liquid crystal material 10 for a certain period.
【0009】次に従来の他の液晶表示装置の例を示す。
図17は一画素の拡大図、図18および図19はそれぞ
れ図17のA−A’線およびB−B’線の断面図であ
る。また、図16は図17の液晶表示装置の等価回路図
である。Next, an example of another conventional liquid crystal display device will be shown.
17 is an enlarged view of one pixel, and FIGS. 18 and 19 are sectional views taken along the lines AA ′ and BB ′ of FIG. 17, respectively. 16 is an equivalent circuit diagram of the liquid crystal display device of FIG.
【0010】図17、図18、図19、図16におい
て、5は逆スタガ型の薄膜トランジスタ、1は金属膜よ
りなる走査信号配線およびこの走査信号配線と同時に形
成される薄膜トランジスタのゲート電極(G)、2は金
属膜と透明導電膜の積層膜よりなる画像信号配線および
薄膜トランジスタ5のソース電極(S)、3は透明導電
膜よりなる透明画素電極、4は光反射機能を持つ金属膜
よりなる反射画素電極、6は薄膜トランジスタ5の半導
体膜、8は薄膜トランジスタ5のゲート絶縁膜、9は絶
縁性保護膜、10は液晶材料、11は透明導電膜よりな
る対向電極、7はブラックマトリクス、7' はブラック
マトリクスの開口部、12、13は透明ガラス基板であ
る。17, FIG. 18, FIG. 19, and FIG. 16, 5 is an inverted stagger type thin film transistor, 1 is a scanning signal line made of a metal film, and a gate electrode (G) of the thin film transistor formed at the same time as this scanning signal line. Reference numeral 2 is an image signal wiring formed of a laminated film of a metal film and a transparent conductive film and a source electrode (S) of the thin film transistor 5, 3 is a transparent pixel electrode formed of a transparent conductive film, and 4 is a reflection formed of a metal film having a light reflecting function. Pixel electrode, 6 is a semiconductor film of the thin film transistor 5, 8 is a gate insulating film of the thin film transistor 5, 9 is an insulating protective film, 10 is a liquid crystal material, 11 is a counter electrode made of a transparent conductive film, 7 is a black matrix, and 7 ′ is The openings 12 and 13 of the black matrix are transparent glass substrates.
【0011】ここで、反射画素電極4は透明画素電極3
の下部にゲート絶縁膜8を介して設けられ、光の反射機
能を有している。Here, the reflective pixel electrode 4 is the transparent pixel electrode 3
Is provided under the gate electrode via the gate insulating film 8 and has a light reflecting function.
【0012】また、図12において、Clc は透明画素
電極3と対向電極11との間の液晶容量、Cs は透明画
素電極3と隣接する走査信号配線1’との間の付加容量
である。Further, in FIG. 12, Clc is a liquid crystal capacitance between the transparent pixel electrode 3 and the counter electrode 11, and Cs is an additional capacitance between the transparent pixel electrode 3 and the adjacent scanning signal line 1 '.
【0013】このアクティブマトリクス方式の半透過型
液晶表示装置によれば、走査信号配線1から供給される
走査信号によって逆スタガ型の薄膜トランジスタ5がス
イッチングされ、画像信号配線2の信号電圧をドレイン
(D)電極の延長である透明画素電極3に印加すること
により、透明画素電極3と対向電極11との間に保持さ
れた液晶材料10に電圧を印加し、画像の表示を行う。
そして、反射画素電極4の領域が反射画像を表示し、反
射画素電極4の外周部の透過画素電極3の領域が透過画
像を表示する。According to this active matrix type transflective liquid crystal display device, the inverse stagger type thin film transistor 5 is switched by the scanning signal supplied from the scanning signal wiring 1, and the signal voltage of the image signal wiring 2 is drained (D). ) By applying to the transparent pixel electrode 3 which is an extension of the electrode, a voltage is applied to the liquid crystal material 10 held between the transparent pixel electrode 3 and the counter electrode 11 to display an image.
Then, the area of the reflective pixel electrode 4 displays a reflective image, and the area of the transmissive pixel electrode 3 on the outer peripheral portion of the reflective pixel electrode 4 displays a transmissive image.
【0014】ここで、付加容量Cs は液晶材料10に印
加する電圧を一定期間保持するための電荷保持用の容量
である。Here, the additional capacitance Cs is a charge holding capacitance for holding the voltage applied to the liquid crystal material 10 for a certain period.
【0015】[0015]
【発明が解決しようとする課題】図14に示す従来の半
透過型液晶表示装置では、図14および図15に示すよ
うに、極力画素電極を大きくし、明るい液晶表示装置を
実現することを目的に、絶縁性保護膜9の上に厚さ2〜
3μmの絶縁性有機膜15を形成し、薄膜トランジスタ
5および画像信号配線2の上部にも反射画素電極14を
形成した構造である。そのため、画素電極の面積が大き
く、開口率は向上しているが、その反面、絶縁性有機膜
15の成膜およびパターニング、反射画素電極14の成
膜およびパターニングというように工程数が大幅に増加
し、生産性および歩留まりを低下させていた。In the conventional transflective liquid crystal display device shown in FIG. 14, an object is to realize a bright liquid crystal display device by enlarging the pixel electrodes as much as possible, as shown in FIGS. 14 and 15. And the thickness of the insulating protective film 9 is 2 to 2
In this structure, an insulating organic film 15 having a thickness of 3 μm is formed, and a reflective pixel electrode 14 is also formed on the thin film transistor 5 and the image signal wiring 2. Therefore, the area of the pixel electrode is large and the aperture ratio is improved, but on the other hand, the number of steps such as film formation and patterning of the insulating organic film 15 and film formation and patterning of the reflective pixel electrode 14 is significantly increased. However, the productivity and the yield are reduced.
【0016】また、図17に示す従来の半透過型液晶表
示装置では、図18および図19に示すように、一般に
画素電極3周辺部の透過光を遮光するために、対向基板
12側にクロム(Cr)などの金属膜でブラックマトリ
クス7を形成しており、このブラックマトリクス7が開
口部7'の大きさである画素部分の開口率を低下させて
いた。Further, in the conventional transflective liquid crystal display device shown in FIG. 17, as shown in FIGS. 18 and 19, generally, chromium is provided on the counter substrate 12 side in order to block the transmitted light around the pixel electrode 3. The black matrix 7 is formed of a metal film such as (Cr), and the black matrix 7 reduces the aperture ratio of the pixel portion which is the size of the opening 7 ′.
【0017】すなわち、上述した液晶表示装置は、対向
基板12側にブラックマトリクス7を形成すると、対向
基板12を含めた開口部は、図17の点線で示す領域
7'に限られ、画素部分の開口率の向上が図れないとい
う問題があった。That is, in the above-described liquid crystal display device, when the black matrix 7 is formed on the counter substrate 12 side, the opening including the counter substrate 12 is limited to the area 7'shown by the dotted line in FIG. There is a problem that the aperture ratio cannot be improved.
【0018】特に画素電極3とブラックマトリクス7
は、別の基板12、13に形成されているため、両基板
12、13の貼り合わせのズレ量をマージンとして、例
えば6〜10μm程度画素電極3の端から画素電極3の
内側に形成する必要があり、画素部分の開口率が大幅に
低下するという問題があった。In particular, the pixel electrode 3 and the black matrix 7
Is formed on the other substrates 12 and 13, so that it is necessary to form the substrate from the end of the pixel electrode 3 to the inside of the pixel electrode 3 by about 6 to 10 μm with the amount of deviation of the bonding of the substrates 12 and 13 as a margin. However, there is a problem that the aperture ratio of the pixel portion is significantly reduced.
【0019】本発明は、このような従来技術の問題点に
鑑みて完成されたものであり、その目的は、製造プロセ
スを増やすことなく、対向基板側のブラックマトリクス
による開口率の低下を解消した液晶表示装置を提供する
ことにある。The present invention has been completed in view of the above problems of the prior art, and an object thereof is to eliminate the decrease in the aperture ratio due to the black matrix on the counter substrate side without increasing the manufacturing process. An object is to provide a liquid crystal display device.
【0020】[0020]
【課題を解決するための手段】上記目的を達成するため
に、請求項1に係る本発明の液晶表示装置は、複数の画
像信号配線と、複数の走査信号配線とを絶縁膜を介して
交差して設け、この画像信号配線と走査信号配線との交
差部に、画素電極とこの画素電極に画像信号を供給する
スイッチング素子とを設け、前記画素電極とこの画素電
極に対向して設けられた対向電極との間に液晶材料が保
持されている反射型または半透過型の装置において、前
記画素電極の裏面側に前記絶縁膜を介して、前記画素電
極よりも前記画像信号配線側に張り出し、各画素毎に分
離された光反射性の帯状金属膜を設けたことを特徴とす
る。In order to achieve the above object, in a liquid crystal display device according to the present invention according to claim 1, a plurality of image signal wirings and a plurality of scanning signal wirings cross each other with an insulating film interposed therebetween. A pixel electrode and a switching element for supplying an image signal to the pixel electrode are provided at an intersection of the image signal wiring and the scanning signal wiring, and the pixel electrode and the pixel electrode are provided so as to face each other. In a reflection-type or semi-transmission-type device in which a liquid crystal material is held between the counter electrode and the pixel electrode, the back side of the pixel electrode is protruded toward the image signal wiring side from the pixel electrode via the insulating film. A light-reflecting strip-shaped metal film is provided for each pixel.
【0021】請求項2に係る本発明の液晶表示装置は、
前記画素電極と前記帯状金属膜との間の重なり容量Cps
が前記帯状金属膜と前記対向電極との間の液晶容量Clc
1の2倍以上であることを特徴とする。The liquid crystal display device of the present invention according to claim 2 is
Overlap capacitance Cps between the pixel electrode and the strip-shaped metal film
Is the liquid crystal capacitance Clc between the strip metal film and the counter electrode.
It is characterized by being more than twice as many as 1.
【0022】請求項3に係る本発明の液晶表示装置は、
前記帯状金属膜が前記画像信号配線と垂直方向において
一部重なっていることを特徴とする。The liquid crystal display device of the present invention according to claim 3 is
The strip-shaped metal film partially overlaps the image signal wiring in the vertical direction.
【0023】請求項4に係る本発明の液晶表示装置は、
前記画素電極と前記帯状金属膜との間の重なり容量をC
ps、前記帯状金属膜と前記画像信号配線との間の重なり
容量をCsd、前記スイッチング素子のゲート電極とドレ
イン電極との間の容量をCgd、前記画素電極と隣接画素
の走査信号配線との間の重なり容量をCs 、前記画素電
極と前記対向電極との間の液晶容量をClcとしたとき、
(Cps・Csd/(Cps+Csd))が、(Clc +Cs +
Cgd)の1/5以下であることを特徴とする。A liquid crystal display device according to a fourth aspect of the present invention is
The overlapping capacitance between the pixel electrode and the strip-shaped metal film is C
ps, the overlapping capacitance between the strip metal film and the image signal wiring is Csd, the capacitance between the gate electrode and the drain electrode of the switching element is Cgd, and the capacitance between the pixel electrode and the scanning signal wiring of the adjacent pixel is Where Cs is the overlapping capacitance of Cs and Clc is the liquid crystal capacitance between the pixel electrode and the counter electrode,
(Cps · Csd / (Cps + Csd)) becomes (Clc + Cs +
Cgd) is 1/5 or less.
【0024】請求項5に係る本発明の液晶表示装置は、
前記帯状金属膜が前記走査信号配線と同一材料で形成さ
れ、前記走査信号配線とは分離されていることを特徴と
する。The liquid crystal display device of the present invention according to claim 5 is
The strip-shaped metal film is formed of the same material as the scanning signal wiring and is separated from the scanning signal wiring.
【0025】請求項6に係る本発明の液晶表示装置は、
前記スイッチング素子が逆スタガ型薄膜トランジスタで
あることを特徴とする。A liquid crystal display device according to a sixth aspect of the present invention is
The switching element is an inverted staggered thin film transistor.
【0026】本発明の液晶表示装置によれば、上記構成
のように、画素電極の裏面側に絶縁膜を介して画素電極
よりも画像信号配線側に張り出した光反射性の帯状金属
膜を設けたことで、この部分での光漏れを発生せず、ま
た、帯状金属膜が反射電極として機能する。これによ
り、この画像信号配線との対峙部分のブラックマトリク
スは不要になるか、もしくは幅狭に形成でき、その結
果、開口率を向上させた反射、半透過型の液晶パネルを
実現することができる。According to the liquid crystal display device of the present invention, as in the above structure, a light-reflective strip-shaped metal film is provided on the back surface side of the pixel electrode so as to extend toward the image signal wiring side from the pixel electrode via the insulating film. Therefore, light leakage does not occur at this portion, and the strip-shaped metal film functions as a reflective electrode. As a result, the black matrix at the portion facing the image signal wiring becomes unnecessary or can be formed in a narrow width, and as a result, a reflective or semi-transmissive liquid crystal panel with an improved aperture ratio can be realized. .
【0027】[0027]
【発明の実施の形態】以下、本発明の実施の形態を添付
図面に基づき詳細に説明する。図1は本発明に係る液晶
表示装置の実施の一形態を示す画素部分の平面図であ
り、図2は図1のA−A’線断面図、図3は図1のB−
B’線断面図、図4は図1の液晶表示装置の等価回路図
である。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. 1 is a plan view of a pixel portion showing an embodiment of a liquid crystal display device according to the present invention, FIG. 2 is a sectional view taken along the line AA ′ of FIG. 1, and FIG.
FIG. 4 is a sectional view taken along line B ′, and FIG. 4 is an equivalent circuit diagram of the liquid crystal display device of FIG. 1.
【0028】図1乃至図4において、1は走査信号配
線、2は画像信号配線、3は画素電極、4は光反射機能
を持つ帯状金属膜(反射画素電極)、5は薄膜トランジ
スタから成るスイッチング素子、7はブラックマトリク
ス、8はゲート絶縁膜、9は保護膜、10は液晶材料、
11は対向電極、12、13は透明ガラス基板である。1 to 4, 1 is a scanning signal wiring, 2 is an image signal wiring, 3 is a pixel electrode, 4 is a strip-shaped metal film (reflection pixel electrode) having a light reflecting function, and 5 is a switching element composed of a thin film transistor. , 7 is a black matrix, 8 is a gate insulating film, 9 is a protective film, 10 is a liquid crystal material,
Reference numeral 11 is a counter electrode, and 12 and 13 are transparent glass substrates.
【0029】走査信号配線1と画像信号配線2はそれぞ
れ複数設けられており、この走査信号配線1と画像信号
配線2の各交差部に画素電極3及びスイッチング素子5
が設けられている。A plurality of scanning signal wirings 1 and a plurality of image signal wirings 2 are provided, and the pixel electrode 3 and the switching element 5 are provided at each intersection of the scanning signal wirings 1 and the image signal wirings 2.
Is provided.
【0030】スイッチング素子5は、走査信号配線2に
連続して形成されたゲート電極(G)、ゲート絶縁膜
8、チャネル部となる半導体膜6、画像信号配線2に連
続して形成されたソース電極(S)及び画素電極3に連
続して形成されたドレイン電極(D)にて形成される。The switching element 5 has a gate electrode (G) formed continuously on the scanning signal line 2, a gate insulating film 8, a semiconductor film 6 to be a channel portion, and a source continuously formed on the image signal line 2. The drain electrode (D) is formed continuously with the electrode (S) and the pixel electrode 3.
【0031】走査信号配線1及びゲート電極(G)は、
アルミニウム合金(AlX)やタンタル(Ta)などの
光反射機能を持つ金属膜で形成される。The scanning signal line 1 and the gate electrode (G) are
It is formed of a metal film having a light reflecting function, such as aluminum alloy (AlX) or tantalum (Ta).
【0032】ゲート絶縁膜8は、窒化シリコン(SiN
x)、酸化シリコン(SiO2 )、酸化タンタル(Ta
Ox )などで形成される。The gate insulating film 8 is made of silicon nitride (SiN
x), silicon oxide (SiO2), tantalum oxide (Ta
Ox) and the like.
【0033】半導体膜6はアモルファスシリコン膜など
で形成される。また、画素電極3は、ITOなどの透明
導電膜で形成される。画像信号配線2、ソース電極
(S)及びドレイン電極(D)は、チタン(Ti)、モ
リブデン(Mo)、アルミニウム合金(AlX)などの
金属膜2aとITOなどの透明導電膜2bの積層膜で形
成される。なお、これらの画像信号配線2、ソース電極
(S)及びドレイン電極(D)は、金属膜2aと透明導
電膜2bの二層構造とする場合に限らず、金属膜2bだ
けの一層構造のものでもよい。The semiconductor film 6 is formed of an amorphous silicon film or the like. The pixel electrode 3 is formed of a transparent conductive film such as ITO. The image signal wiring 2, the source electrode (S) and the drain electrode (D) are a laminated film of a metal film 2a such as titanium (Ti), molybdenum (Mo) and aluminum alloy (AlX) and a transparent conductive film 2b such as ITO. It is formed. The image signal wiring 2, the source electrode (S) and the drain electrode (D) are not limited to the two-layer structure of the metal film 2a and the transparent conductive film 2b, but have a single-layer structure of only the metal film 2b. But it's okay.
【0034】本発明の液晶表示装置では、画素電極3の
裏面側に絶縁膜8を介して、この画素電極3よりも画像
信号配線2側に張り出し、各画素毎に分離された光反射
機能を持つ帯状金属膜4、4’が形成されている。この
金属膜4、4’は遮光性を有することから、画素電極3
と画像信号配線2との間で光漏れが発生する隙間が小さ
くなる。したがって、図1、図2、図3に示すように、
画像信号配線2に対峙する部分のブラックマトリクス7
を幅狭にでき、開口部の領域7'が拡大することから、
画素部分の開口率を向上させることができる。In the liquid crystal display device of the present invention, the pixel electrode 3 is projected on the image signal wiring 2 side from the pixel electrode 3 through the insulating film 8 to provide a light reflection function separated for each pixel. The band-shaped metal films 4 and 4 ′ are formed. Since the metal films 4 and 4 ′ have a light shielding property, the pixel electrode 3
The gap where light leakage occurs between the image signal wiring 2 and the image signal wiring 2 becomes small. Therefore, as shown in FIGS. 1, 2 and 3,
Black matrix 7 in a portion facing the image signal wiring 2
Can be made narrower and the area 7'of the opening is enlarged,
The aperture ratio of the pixel portion can be improved.
【0035】また、帯状金属膜が光反射機能を持つこと
により、反射、半透過型液晶表示装置の反射画素電極と
して機能する。Further, since the strip-shaped metal film has a light reflecting function, it functions as a reflective pixel electrode of a reflective / semi-transmissive liquid crystal display device.
【0036】このように帯状金属膜4を画素毎に分離す
ると、この金属膜4と他の配線間にショートが発生して
も一画素の点欠陥になるだけであって、他の画素に影響
を及ぼすこともない。When the strip-shaped metal film 4 is separated for each pixel in this way, even if a short circuit occurs between the metal film 4 and another wiring, it becomes only a point defect of one pixel and affects other pixels. It does not affect.
【0037】ここで、画素電極3と隣接する走査信号配
線1’との間で、液晶材料10に印加する電圧を一定期
間保持するための付加容量Cs が画素電極3と対向電極
11との間で液晶容量Clc が帯状金属膜4、4’と対
向電極11との間で液晶容量Clc1、Clc2が、画素電極
3と帯状金属膜4、4’との間の重なり容量Cps1 、C
ps2 がそれぞれ形成され、図4に示すような等価回路と
なる。Here, an additional capacitance Cs for holding the voltage applied to the liquid crystal material 10 for a certain period is provided between the pixel electrode 3 and the counter electrode 11 between the pixel electrode 3 and the adjacent scanning signal line 1 '. The liquid crystal capacitance Clc is between the strip metal films 4, 4'and the counter electrode 11, and the liquid crystal capacitance Clc1, Clc2 is between the pixel electrode 3 and the strip metal films 4, 4'Cps1, Cp.
Each of ps2 is formed to form an equivalent circuit as shown in FIG.
【0038】この場合、画素電極3に印加される電圧を
Vp とすると、帯状金属膜4には、Cps1 /(Cps1+
Clc1)×Vpの電圧が印加され、帯状金属膜4’に
は、Cps2 /(Cps2+Clc2)×Vpの電圧が印加され
るが、Cps1>2Clc1およびCps2>2Clc2の場合、帯
状金属膜4、4’には、2/3・Vp〜Vpの電圧(画素
電極3に近い電圧)が印加され、画素電極3と帯状金属
膜4、4’との電位差がほぼ無くなり、これにより、帯
状金属膜4、4’も画素電極と同様の機能を持ち、この
部分でのディスクリネーションの発生がない良好な表示
特性が得られる。すなわち、画素電極3と帯状金属膜
4、4’との重なり容量Cps1、Cps2が帯状金属膜4、
4’と対向電極11との間の液晶容量Clc1、Clc2の2
倍以上となるように形成すればよい。In this case, assuming that the voltage applied to the pixel electrode 3 is Vp, the strip metal film 4 has Cps1 / (Cps1 +
A voltage of Clc1) × Vp is applied, and a voltage of Cps2 / (Cps2 + Clc2) × Vp is applied to the strip-shaped metal film 4 ′, but in the case of Cps1> 2Clc1 and Cps2> 2Clc2, the strip-shaped metal films 4, 4 ′. Is applied with a voltage of 2/3 · Vp to Vp (a voltage close to that of the pixel electrode 3), the potential difference between the pixel electrode 3 and the strip-shaped metal films 4 and 4 ′ is almost eliminated, and thus the strip-shaped metal film 4, 4'also has the same function as the pixel electrode, and good display characteristics can be obtained without the occurrence of disclination in this portion. That is, the overlapping capacitances Cps1 and Cps2 between the pixel electrode 3 and the strip-shaped metal films 4 and 4'are
2 of liquid crystal capacitors Clc1 and Clc2 between 4'and the counter electrode 11
It may be formed so as to be double or more.
【0039】次に他の実施形態例を述べる。図5、図
6、図7、図8は、他の実施の形態を示す図であり、図
5は一画素の平面図、図6は図5のA−A’線断面図、
図7は図6のB−B’線断面図、図8は図5の液晶表示
装置の等価回路図である。Next, another embodiment will be described. 5, FIG. 6, FIG. 7, and FIG. 8 are views showing another embodiment, FIG. 5 is a plan view of one pixel, FIG. 6 is a sectional view taken along the line AA ′ of FIG.
7 is a sectional view taken along the line BB 'of FIG. 6, and FIG. 8 is an equivalent circuit diagram of the liquid crystal display device of FIG.
【0040】図5、図6、図7、図8において、1は走
査信号配線、2は画像信号配線、3は画素電極、4は帯
状金属膜、5は薄膜トランジスタから成るスイッチング
素子、7はブラックマトリクス、8はゲート絶縁膜、9
は保護膜、10は液晶材料、11は対向電極、12、1
3は透明ガラス基板である。In FIGS. 5, 6, 7, and 8, 1 is a scanning signal wiring, 2 is an image signal wiring, 3 is a pixel electrode, 4 is a strip-shaped metal film, 5 is a switching element composed of a thin film transistor, and 7 is black. Matrix, 8 is a gate insulating film, 9
Is a protective film, 10 is a liquid crystal material, 11 is a counter electrode, 12, 1
3 is a transparent glass substrate.
【0041】この例についても、図1乃至図4に示す実
施例とほぼ同じであるが、この例では、画素電極3の裏
面側に絶縁膜8を介して画像信号配線2側に張り出した
帯状の光反射機能を持つ金属膜4が垂直方向において画
像信号配線2と一部重なって設けられている。This example is also almost the same as the embodiment shown in FIGS. 1 to 4, but in this example, a strip-like shape is projected to the image signal wiring 2 side through the insulating film 8 on the back surface side of the pixel electrode 3. The metal film 4 having the light reflecting function is provided so as to partially overlap the image signal wiring 2 in the vertical direction.
【0042】この金属膜4は、アルミニウム合金(Al
X)やタンタル(Ta)などから成り、光反射機能およ
び透過光遮光性を有する。また、画像信号配線2もチタ
ン(Ti)、モリブデン(Mo)、アルミニウム合金
(AlX)などの金属膜2aとITOなどの透明導電膜
2bで形成され、遮光性を有する。This metal film 4 is made of aluminum alloy (Al
It is made of X) or tantalum (Ta) and has a light reflection function and a transmitted light shielding property. The image signal wiring 2 is also formed of a metal film 2a of titanium (Ti), molybdenum (Mo), aluminum alloy (AlX) or the like and a transparent conductive film 2b of ITO or the like, and has a light shielding property.
【0043】したがって、図5、図6、図7に示すよう
に、画像信号配線2に対峙する部分のブラックマトリク
ス7をより幅狭にでき、開口部の領域7'がさらに拡大
することで、画素部分の開口率を大幅に向上させること
ができる。Therefore, as shown in FIGS. 5, 6 and 7, the width of the black matrix 7 in the portion facing the image signal wiring 2 can be made narrower and the area 7'of the opening can be further expanded. The aperture ratio of the pixel portion can be significantly improved.
【0044】帯状金属膜4と画像信号配線2の一部を垂
直方向に重ねた場合、画素電極3と画像信号配線2間の
クロストークは、画素電極3と帯状金属膜4間の容量C
ps(Cps1 、Cps2 )と、帯状金属膜4と画像信号配線
2間の容量Csd(Csd1 、Csd2 )との直列の容量、す
なわち(Cps×Csd/(Cps+Csd))に比例するが、
画素電極3と対向電極11との間の液晶容量をCLC1 、
画素電極3と隣接する走査信号配線1’との間の付加容
量をCs 、スイッチング素子5のゲート電極(G)とド
レイン電極(D)間の容量をCgdとしたときに、上述の
(Cps×Csd/(Cps+Csd))を(Clc+Cs +Cg
d)の1/5以下にすることにより、クロストークが殆
ど発生しない良好な表示装置となる。When the strip-shaped metal film 4 and a part of the image signal wiring 2 are vertically overlapped, the crosstalk between the pixel electrode 3 and the image signal wiring 2 is caused by the capacitance C between the pixel electrode 3 and the strip-shaped metal film 4.
In proportion to ps (Cps1, Cps2) and the capacitance Csd (Csd1, Csd2) between the strip-shaped metal film 4 and the image signal wiring 2 in series, that is, (Cps × Csd / (Cps + Csd)),
The liquid crystal capacitance between the pixel electrode 3 and the counter electrode 11 is CLC1,
When the additional capacitance between the pixel electrode 3 and the adjacent scanning signal line 1'is Cs and the capacitance between the gate electrode (G) and the drain electrode (D) of the switching element 5 is Cgd, the above (Cps × Csd / (Cps + Csd)) becomes (Clc + Cs + Cg
By setting it to 1/5 or less of d), a good display device in which crosstalk hardly occurs can be obtained.
【0045】また、帯状金属膜4を走査信号と同一材料
で形成すると、製造工程を全く煩雑化させることなく帯
状金属膜を形成できるという点で好適である。Further, it is preferable to form the strip-shaped metal film 4 from the same material as that of the scanning signal, because the strip-shaped metal film can be formed without complicating the manufacturing process at all.
【0046】さらに、画素電極3の左右方向で光の漏れ
量が異なるように液晶の配向方向を設定した場合は、画
素電極3の片側のみに帯状金属膜4を設けてもよい。Further, when the liquid crystal alignment direction is set so that the amount of light leakage differs in the horizontal direction of the pixel electrode 3, the strip metal film 4 may be provided only on one side of the pixel electrode 3.
【0047】図9、図10、図11、図12にて、さら
に他の実施の形態を示す。図9は一画素の平面図、図1
0は図9のA−A’線断面図、図11は図9のB−B’
線断面図、図12は図9の液晶表示装置の等価回路図で
ある。FIG. 9, FIG. 10, FIG. 11 and FIG. 12 show still another embodiment. FIG. 9 is a plan view of one pixel, and FIG.
0 is a sectional view taken along the line AA ′ of FIG. 9, and FIG. 11 is a sectional view taken along the line BB ′ of FIG. 9.
12 is an equivalent circuit diagram of the liquid crystal display device of FIG.
【0048】この例においても、図1乃至図4に示す例
とほぼ同じであるが、本例では、画素電極3の裏面側に
絶縁膜8を介して画像信号配線2側に張り出した2個の
帯状の光反射機能を持つ金属膜4、4'が一つに接続さ
れている。In this example as well, although it is almost the same as the example shown in FIGS. 1 to 4, in this example, two pieces are projected to the image signal wiring 2 side through the insulating film 8 on the back surface side of the pixel electrode 3. The strip-shaped metal films 4 and 4'having a light reflection function are connected to one another.
【0049】なお、本例では画素電極3と帯状の光反射
機能を持つ金属膜4、4'がゲート絶縁膜8を介して絶
縁されていたが、部分的にゲート絶縁膜8を除去し、画
素電極3と帯状の光反射機能を持つ金属膜4、4'を接
続してもなんら問題はない。In this example, the pixel electrode 3 and the metal films 4 and 4'having a band-shaped light reflecting function are insulated via the gate insulating film 8, but the gate insulating film 8 is partially removed, There is no problem even if the pixel electrode 3 and the metal films 4, 4'having a band-shaped light reflecting function are connected.
【0050】[0050]
【発明の効果】以上のとおり、本発明の液晶表示装置に
よれば、画素電極の裏面側に絶縁膜を介して、この画素
電極よりも画像信号配線側に張り出し、各画素毎に分離
された光反射性の帯状金属膜を設けたことで、画像信号
配線と画素電極間の漏れ光を削減でき、この部分のブラ
ックマトリクスを削減でき、その結果、画素部分の開口
率が向上した。As described above, according to the liquid crystal display device of the present invention, the pixel electrodes are separated from each other by projecting to the image signal wiring side from the pixel electrodes through the insulating film on the back surface side. By providing the light-reflective strip-shaped metal film, it is possible to reduce light leakage between the image signal wiring and the pixel electrode and reduce the black matrix in this portion, and as a result, the aperture ratio of the pixel portion is improved.
【0051】また、本発明によれば、帯状金属膜が光反
射機能を持つことで、帯状金属膜が反射画素電極として
機能し、開口率を向上させた反射、半透過型の液晶パネ
ルを実現することができた。Further, according to the present invention, since the strip-shaped metal film has a light reflecting function, the strip-shaped metal film functions as a reflective pixel electrode, and a reflective / semi-transmissive liquid crystal panel having an improved aperture ratio is realized. We were able to.
【0052】さらにまた、本発明によれば、帯状金属膜
は周辺の配線と接続されずに独立していることから、こ
の帯状金属膜による画素電極の負荷容量の増加や周辺配
線の負荷容量の増加は殆どなく、大画面化した場合の液
晶パネルの容量増加がなく、高速動作が可能な低消費電
力の液晶パネルが実現できた。Furthermore, according to the present invention, since the strip-shaped metal film is not connected to the peripheral wiring and is independent, the load capacitance of the pixel electrode and the load capacitance of the peripheral wiring are increased by the strip-shaped metal film. There was almost no increase, and there was no increase in the capacity of the liquid crystal panel when the screen was enlarged, and a liquid crystal panel of low power consumption capable of high-speed operation was realized.
【図1】本発明の液晶表示装置の一画素の拡大図であ
る。FIG. 1 is an enlarged view of one pixel of a liquid crystal display device of the present invention.
【図2】図1のA−A’線断面図である。FIG. 2 is a sectional view taken along the line A-A ′ in FIG.
【図3】図1のB−B’線断面図である。FIG. 3 is a sectional view taken along the line B-B ′ of FIG.
【図4】図1に示す液晶表示装置の等価回路図である。FIG. 4 is an equivalent circuit diagram of the liquid crystal display device shown in FIG.
【図5】本発明の他の液晶表示装置を示す拡大図であ
る。FIG. 5 is an enlarged view showing another liquid crystal display device of the present invention.
【図6】図5のA−A’線断面図である。6 is a cross-sectional view taken along the line A-A ′ of FIG.
【図7】図5のB−B’線断面図である。7 is a sectional view taken along line B-B ′ of FIG.
【図8】図5に示す液晶表示装置の等価回路図である。8 is an equivalent circuit diagram of the liquid crystal display device shown in FIG.
【図9】本発明のさらに他の液晶表示装置の拡大図であ
る。FIG. 9 is an enlarged view of still another liquid crystal display device of the present invention.
【図10】図9のA−A’線断面図である。10 is a cross-sectional view taken along the line A-A ′ of FIG.
【図11】図9のB−B’線断面図である。11 is a sectional view taken along line B-B ′ of FIG.
【図12】図9に示す液晶表示装置の等価回路図であ
る。12 is an equivalent circuit diagram of the liquid crystal display device shown in FIG.
【図13】従来の液晶表示装置の一画素の拡大図であ
る。FIG. 13 is an enlarged view of one pixel of a conventional liquid crystal display device.
【図14】図13のA−A’線断面図である。14 is a cross-sectional view taken along the line A-A ′ of FIG.
【図15】図13のB−B’線断面図である。15 is a sectional view taken along line B-B ′ of FIG.
【図16】図13と図17に示す液晶表示装置の等価回
路図である。16 is an equivalent circuit diagram of the liquid crystal display device shown in FIGS. 13 and 17. FIG.
【図17】他の従来の液晶表示装置の一画素の拡大図で
ある。FIG. 17 is an enlarged view of one pixel of another conventional liquid crystal display device.
【図18】図17のA−A’線断面図である。18 is a cross-sectional view taken along the line A-A ′ of FIG.
【図19】図17のB−B’線断面図である。19 is a cross-sectional view taken along the line B-B ′ of FIG.
1・・・走査信号配線、2・・・画像信号配線、3・・
・画素電極、4・・・帯状の光反射機能を持つ金属膜、
5・・・スイッチング素子、7・・・ブラックマトリク
ス、8・・・ゲート絶縁膜、9・・・保護膜、10・・
・液晶材料、11・・・対向電極、12、13・・・透
明ガラス基板、14・・・金属膜、15・・・絶縁性有
機膜1 ... Scan signal wiring, 2 ... Image signal wiring, 3 ...
.Pixel electrodes, 4 ... Metal film having band-shaped light reflection function,
5 ... Switching element, 7 ... Black matrix, 8 ... Gate insulating film, 9 ... Protective film, 10 ...
Liquid crystal material, 11 ... Counter electrode, 12, 13 ... Transparent glass substrate, 14 ... Metal film, 15 ... Insulating organic film
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Claims (6)
線とを絶縁膜を介して交差して設け、この画像信号配線
と走査信号配線との交差部に、画素電極とこの画素電極
に画像信号を供給するスイッチング素子とを設け、前記
画素電極とこの画素電極に対向して設けられた対向電極
との間に液晶材料が保持されている液晶表示装置におい
て、前記画素電極の裏面側に前記絶縁膜を介して、前記
画素電極よりも前記画像信号配線側に張り出し、各画素
毎に分離された光反射性の帯状金属膜を設けたことを特
徴とする反射型または半透過型の液晶表示装置。1. A plurality of image signal wirings and a plurality of scanning signal wirings are provided so as to intersect each other with an insulating film interposed, and a pixel electrode and this pixel electrode are provided at the intersection of the image signal wirings and the scanning signal wirings. In a liquid crystal display device in which a switching element for supplying an image signal is provided, and a liquid crystal material is held between the pixel electrode and a counter electrode provided to face the pixel electrode, a liquid crystal display device is provided on the back surface side of the pixel electrode. A reflective or semi-transmissive liquid crystal characterized by being provided with a light-reflective strip-shaped metal film, which extends over the image signal wiring side from the pixel electrode through the insulating film and is separated for each pixel. Display device.
なり容量Cpsが前記帯状金属膜と前記対向電極との間の
液晶容量Clc1の2倍以上であることを特徴とする請求
項1に記載の反射型または半透過型の液晶表示装置。2. The overlapping capacitance Cps between the pixel electrode and the strip metal film is at least twice the liquid crystal capacitance Clc1 between the strip metal film and the counter electrode. The reflective or semi-transmissive liquid crystal display device according to item 1.
方向において一部重なっていることを特徴とする請求項
1に記載の反射型または半透過型の液晶表示装置。3. The reflective or semi-transmissive liquid crystal display device according to claim 1, wherein the strip-shaped metal film partially overlaps the image signal wiring in the vertical direction.
なり容量をCps、前記帯状金属膜と前記画像信号配線と
の間の重なり容量をCsd、前記スイッチング素子のゲー
ト電極とドレイン電極との間の容量をCgd、前記画素電
極と隣接画素の走査信号配線との間の重なり容量をCs
、前記画素電極と前記対向電極との間の液晶容量をCl
cとしたとき、(Cps・Csd/(Cps+Csd))が、
(Clc +Cs+Cgd)の1/5以下であることを特徴と
する請求項3に記載の反射型または半透過型の液晶表示
装置。4. The overlapping capacitance between the pixel electrode and the strip metal film is Cps, the overlapping capacitance between the strip metal film and the image signal wiring is Csd, and the gate electrode and the drain electrode of the switching element are formed. Is Cgd, and the overlapping capacitance between the pixel electrode and the scanning signal wiring of the adjacent pixel is Cs.
, The liquid crystal capacitance between the pixel electrode and the counter electrode is Cl
Assuming c, (Cps · Csd / (Cps + Csd))
The reflective or semi-transmissive liquid crystal display device according to claim 3, wherein the liquid crystal display device has a ratio of 1/5 or less of (Clc + Cs + Cgd).
材料で形成され、前記走査信号配線とは分離されている
ことを特徴とする請求項1又は請求項2に記載の反射型
または半透過型の液晶表示装置。5. The reflection type or semi-reflector according to claim 1, wherein the strip-shaped metal film is formed of the same material as the scanning signal wiring and is separated from the scanning signal wiring. Transmissive liquid crystal display device.
ランジスタであることを特徴とする請求項1乃至請求項
5に記載の反射型または半透過型の液晶表示装置。6. The reflective or semi-transmissive liquid crystal display device according to claim 1, wherein the switching element is an inverted staggered thin film transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002076907A JP2003270654A (en) | 2002-03-19 | 2002-03-19 | Liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002076907A JP2003270654A (en) | 2002-03-19 | 2002-03-19 | Liquid crystal display |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007032452A Division JP2007122088A (en) | 2007-02-13 | 2007-02-13 | Liquid crystal display panel and liquid crystal display device including the liquid crystal display panel |
| JP2007032451A Division JP4113561B2 (en) | 2007-02-13 | 2007-02-13 | Liquid crystal display panel and liquid crystal display device including the liquid crystal display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003270654A true JP2003270654A (en) | 2003-09-25 |
Family
ID=29205496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002076907A Pending JP2003270654A (en) | 2002-03-19 | 2002-03-19 | Liquid crystal display |
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| Country | Link |
|---|---|
| JP (1) | JP2003270654A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006078890A (en) * | 2004-09-10 | 2006-03-23 | Sharp Corp | Transflective liquid crystal display device and manufacturing method thereof |
| US7209191B2 (en) | 2002-11-05 | 2007-04-24 | Tpo Displays Corp. | Transflective liquid crystal display |
| JP2007206557A (en) * | 2006-02-03 | 2007-08-16 | Toshiba Matsushita Display Technology Co Ltd | Liquid crystal display device |
| JP2011022590A (en) * | 2006-03-06 | 2011-02-03 | Au Optronics Corp | Transflective liquid crystal display |
| CN107741675A (en) * | 2017-11-30 | 2018-02-27 | 武汉天马微电子有限公司 | Display panel and display device |
-
2002
- 2002-03-19 JP JP2002076907A patent/JP2003270654A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7209191B2 (en) | 2002-11-05 | 2007-04-24 | Tpo Displays Corp. | Transflective liquid crystal display |
| JP2006078890A (en) * | 2004-09-10 | 2006-03-23 | Sharp Corp | Transflective liquid crystal display device and manufacturing method thereof |
| JP2007206557A (en) * | 2006-02-03 | 2007-08-16 | Toshiba Matsushita Display Technology Co Ltd | Liquid crystal display device |
| JP2011022590A (en) * | 2006-03-06 | 2011-02-03 | Au Optronics Corp | Transflective liquid crystal display |
| CN107741675A (en) * | 2017-11-30 | 2018-02-27 | 武汉天马微电子有限公司 | Display panel and display device |
| CN107741675B (en) * | 2017-11-30 | 2020-11-27 | 武汉天马微电子有限公司 | Display panel and display device |
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