JP2003118163A - Driving method of integrated light emitting device and driving method of exposure apparatus - Google Patents

Abstract

(57) [Summary] [Problem] Regarding light quantity correction which has been a problem in a conventional integrated light emitting device, particularly an integrated light emitting device using an organic EL element as a light emitting source, a variation in light emitting amount for each light emitting point, And a method of driving an integrated light emitting device and a method of driving an exposure device using the same, which can correct variations over time with high accuracy and at a low cost and can perform high-speed recording. SOLUTION: The light emission of a light emitting element is detected by a light receiving means, and the light emission time of the light emitting element is controlled based on a comparison result between an integrated value of the light amount detected by the light receiving means and image data.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for driving an integrated light emitting device used in an exposure device provided in a recording device such as an electrophotographic copying machine or a printer,
More specifically, the present invention relates to a method for driving an integrated light emitting device that reduces variation in the amount of light in a light emitting element group that uses a light emitting element whose light emission characteristics are typified by an organic electroluminescence element (organic EL element). is there.

[0002]

2. Description of the Related Art Conventionally, a scanner (exposure device) using a light-emitting body composed of a light-emitting diode or a laser diode as a light source for exposing a photoconductor has been proposed and is used as an exposure apparatus for a recording device such as a copying machine or a printer. , Is widely and commonly used. In particular, in the case of an exposure apparatus using a light emitting body made of a diode, there is an advantage that the apparatus can be easily downsized.

On the other hand, since it is necessary to form the light emitters in a one-dimensional array, there is a problem in that the light quantity of each light emitting element varies.

Further, in recent years, research and development of organic EL elements have been actively carried out. However, when this organic EL element is applied to an exposure apparatus, not only variations in the initial light amount but also changes with time in light emitting characteristics and light emitting elements. It is generally known that there is a variation in characteristics over time, and it is very difficult to apply the organic EL element to an exposure apparatus.

In order to solve the above problems, for example, Japanese Patent Laid-Open No. 11-109918 discloses a technique for changing a driving condition such as a driving current value according to a deterioration characteristic to correct a change with time. Japanese Patent Laid-Open No. 238333 proposes a technique of detecting a light emission amount using a light receiving unit and correcting the light emission amount using a signal from the light receiving unit.

[0006]

However, the above-mentioned prior art has the following problems.

According to the correction method disclosed in Japanese Patent Laid-Open No. 11-109918, the change over time (life characteristic) of the light emitting element is stored in advance in a storage means such as a memory and the time when the light emitting element is actually driven is stored. There is disclosed a technique in which the drive condition is set by calculating the correction amount by detecting the value, performing the calculation with the aging characteristic, and calculating the correction amount.

[0008] However, in the above method, since a certain typical change with time is stored in the storage means, variations in the light emission amount due to batches or lots in the production of light emitting elements and further variations among individual light emitting points in the same device are corrected. There is a problem that you cannot do it.

The correction method disclosed in Japanese Unexamined Patent Publication No. 2000-238333 discloses a technique in which the amount of light at a light emitting point is detected before or during exposure to calculate a driving condition by a central processing unit (CPU). ing.

However, by detecting the amount of light during exposure, C
In the method of inputting to PU, performing calculation, and feeding back to the drive voltage, the time required for correction is required, and high-speed recording becomes difficult. Before exposure (during standby)
However, the method of performing the correction cannot correct the change in the light amount that occurs during the exposure of one image data.

Further, in the above-mentioned conventional technique, it is difficult to reduce the cost of the device because the recording means, the arithmetic means, etc. are indispensable for the correction of the light emission amount.

The present invention has been made to solve the above problems, and has been a problem in the conventional integrated light emitting device, particularly in the integrated light emitting device using an organic EL element as a light emitting source. Regarding the light amount correction, it is possible to correct the light emission amount variation for each light emitting point and the variation over time with high accuracy and at low cost, and in addition, it is possible to perform high-speed recording. It is an object of the present invention to provide a driving method of an exposure apparatus used.

[0013]

A first aspect of the invention for solving the above-mentioned problems is an integrated type device comprising at least a light emitting element group composed of a plurality of light emitting elements and a light receiving means for detecting the light emission of the light emitting elements. In the method for driving a light emitting device, the light emitting time of the light emitting element is controlled based on a comparison result of the integrated value of the light amount detected by the light receiving unit and the image data.

According to the present invention, in the first aspect of the invention, "when a plurality of light emitting elements start emitting light at the same time when the light emitting element group starts to emit light,""the light emitting elements emit light with an integrated value of the light amount. End when the value corresponding to the image data is reached "," Use as the light receiving means a light receiving element group including light receiving elements provided corresponding to each light emitting element included in the light emitting element group , "As a preferred embodiment.

A second invention for solving the above-mentioned problems includes an integrated light emitting device including at least a light emitting element group including a plurality of light emitting elements, and a light receiving means for detecting light emission of the light emitting elements. A method for driving an exposure apparatus is characterized by using the method for driving an integrated light emitting device according to the first invention.

[0016]

BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment)
The first embodiment will be described with reference to FIG.

FIG. 1 is a block diagram of an embodiment of an integrated light emitting device which realizes the driving method of the present invention, and shows a structure of the integrated light emitting device in which light emitting elements for N pixels are arranged. FIG. 2 is an equivalent circuit diagram of a drive circuit and a storage circuit for one pixel of an embodiment of an integrated light emitting device that realizes the drive method of the present invention.

In FIG. 1, 101 is a light emitting element, and 102 is
Is a light receiving element, and the same number of light receiving elements 102 are provided corresponding to each light emitting element 101. In addition, the light emitting element 101 has a driving circuit 103 for each pixel and ON of light emission.
Drive control is performed by a control circuit 104 that controls ON / OFF, and for the light receiving element, a storage circuit 105 for performing a storage operation, a DA converter 106 for converting image data of each pixel into an analog signal, and storage. Comparator 107 for comparing the optical signal level during operation and image data
Is provided in each pixel.

The image data is stored in the shift register 108.
, And all the pixels are simultaneously D
-Transferred to the A converter 106.

Further, the output of the comparator 107 is connected to the control circuit 104 of the light emitting element 101, and further transferred via the shift register 110 to the power supply control circuit 111 for setting the driving condition (driving voltage) of the driving circuit 103.

In FIG. 2, the drive circuit 103 for the light emitting element 101 in FIG. 1 is composed of a CMOS buffer circuit to which the power supply voltage is supplied from the power supply control circuit 111, and the storage circuit 105 of the light receiving element 102 is reset. It is composed of a transistor 201 and a PMOS source follower circuit 202.

Next, the operation of the first embodiment of the present invention will be described in detail with reference to FIG.

FIG. 3 is a timing chart showing a driving method of the integrated light emitting device of the form shown in FIG.

Note that in FIG. 3, the image data has 2 bits and 4 gradations, and the image signal level of each pixel is Din_
1 → LEVEL2, Din_2 → LEVEL3, Din
An example of setting _N → LEVEL4 is shown.

First, the image data DATA is sequentially transferred by the shift register, and after that, the light receiving element is reset to the initial state by the reset pulse RES. By the latch pulse LA, image data is converted into a desired analog signal at the same time for all pixels, that is, DA conversion is performed.

Here, in the state after the latch pulse LA is input and the image data is D-A converted, the comparator 107 shown in FIG. Data has been entered.

After that, by the drive start pulse ST of the light emitting element, drive pulses CNT_1 to CNT_N are simultaneously applied to all pixels.
Turns on and light emission starts. At the same time when the light emission is started, an optical signal by the optical carrier generated in the light receiving element by the light emission is output from the storage circuit, and the signal SO
UT_1-SOUT_N rises with time. Here, paying attention to the first pixel shown in FIG. 3, the signal SOUT_1 from the light receiving element of the first pixel is LE image data.
Light emission is maintained until reaching VEL1, but L
When the voltage reaches EVEL1, the output of the comparator is inverted, and the inverted signal turns off the drive circuit.

Similarly, for other pixels, light emission is continued until the light amount generated by the light receiving element becomes the same as the image data, and when the light amount becomes the same as the image data, the light emission ends.

That is, in the present embodiment, the start of light emission is started at the same time for all pixels, and the end of light emission is accumulated in the accumulating means as the integral value of the light amount detected by the light receiving element, and the integral value corresponds to the image data. When the level is reached, the operation ends for each individual pixel.
In the present invention, the light emission does not always have to start at the same time, and the light emission time of each light emitting element may be controlled by comparing the integrated value of the light amount detected by the light receiving means with the image data. When applied to an electrophotographic recording apparatus or the like that requires a high-speed exposure operation for each, a mode in which light emission of all light emitting elements is simultaneously started as in this embodiment, or all light emitting elements are divided into a plurality of blocks It is preferable that the light emission of at least a plurality of light emitting elements be simultaneously started by dividing each block to emit light.

Here, considering the case where the light amount of the light emitting element decreases during light emission in the present invention, when the light amount decreases, the inclination of the light receiving element output during light emission decreases from the middle. However, although the light emission time becomes longer as the inclination becomes smaller, considering the integrated amount of light emission, the integrated amount does not change even if the light amount change occurs or does not occur. Therefore, it is possible to control the light amount with high accuracy without requiring complicated control of the drive voltage and control of the drive current as in the conventional invention.

For example, in an electrophotographic recording apparatus, it is generally known that the document density has a correlation with the integrated amount of light incident on the photoconductor.

Therefore, by applying the present invention to an electrophotographic recording apparatus, it is possible to perform high-precision exposure corresponding to image data regardless of any change in the light emitting characteristics of the light emitting element, and it is always possible to achieve high exposure. It is possible to obtain a high quality image.

Further, in FIG. 1, the comparator output of each pixel is connected to the power supply control circuit.
In consideration of the case where the light quantity is insufficient within the desired time, for example, before performing the main exposure, it is checked whether the comparator inverts all pixels by performing the full-scale light emission operation in advance. As shown in FIG. 2, it is possible to provide a sequence such as increasing the drive voltage of the drive circuit. Furthermore, it is possible to provide a sequence in which after setting the drive voltage condition of the drive circuit in which the comparators of all pixels are inverted, the drive voltage condition in which the margin is added to the voltage is reset.

Needless to say, the effect of the present invention is effective whether a constant voltage drive circuit or a constant current drive circuit is used as the drive circuit in FIG.

In addition, in order to correct the variation in sensitivity of the light receiving element, the variation data of the light receiving element is stored in advance in the storage means, and the result of calculation with the original image data is
Image data may be input to the exposure apparatus of the present invention.

Although FIG. 2 shows an example in which the optical signal of the light receiving element is output by the PMOS source follower, an amplifier may be provided if sensitivity adjustment is required, and image data is DA converted. Gain adjusting means may be provided in a portion, and in the present invention, it is possible to perform optimum design for these parameters according to the characteristics of the light emitting element and the light receiving element.

In the present invention, the example in which the image data has 2 bits and 4 gradations has been shown, but the number of bits of the image data may be increased or decreased according to the required gradation number.

Next, the structure of the present invention will be described in more detail with reference to FIGS.

FIG. 4 is a schematic view of a cross-sectional structure of the integrated light emitting device of the form shown in FIG.
2 shows a cross-sectional structure of an integrated light emitting device having the circuit block shown in FIG. FIG. 5 is a schematic diagram of a planar structure of an exposure apparatus configured by using the integrated light emitting device having the cross-sectional structure shown in FIG. 4, in which the integrated light emitting device shown in FIG. 4 is arranged one-dimensionally. The exposure apparatus which did it is shown. 6 is shown in FIG.
FIG. 7 is a schematic view of a cross-sectional structure at aa ′ part of FIG. 7, and FIG. 7 is a cross-sectional view showing a main part configuration of an embodiment of a recording apparatus equipped with an exposure apparatus which realizes the driving method of the present invention.

In FIG. 4, a semiconductor element that can be formed by a general semiconductor process is formed on a crystalline silicon substrate 401. Specifically, a PN that serves as a light receiving element
A photodiode 402, an NMOS transistor 403 that constitutes a peripheral circuit such as a drive circuit and a storage circuit, and a PMO
The S-transistor 404 is shown in FIG.
Capacitance element (not shown), resistance element (not shown) as required
May be formed.

On the crystalline silicon substrate 401 on which the above-mentioned circuit element is formed, the first light-transmissive conductive film 406 and the organic hole transport layer 40 which constitute an organic EL element via the insulating layer 405.
7, organic electron transport layer 408, second light transmissive conductive film 40
9 and a protective film 410 are sequentially stacked.

In FIG. 4, the first light-transmissive conductive film 406.
The portion A defined by the second light transmissive conductive film 409 serves as a main light emitting region, and light emission from the light emitting layer can be emitted to both the protective film 410 side and the crystalline silicon substrate 401 side.

Here, it is preferable that the second light transmissive conductive film 409 provided in the direction in which the light used for exposure is extracted has a high transmittance, but the first light transmissive conductive film 406 provided on the light receiving element side. Since the transmittance can be determined depending on the sensitivity design of the light receiving element, for example, a semitransparent metal electrode or the like may be used.

In the present invention, the light emission on the protective film 410 side is used for exposure and the light emission on the crystalline silicon substrate 401 side is used for light emission detection. The light emission of the light emitting element itself used for exposure is detected in real time by a photodiode. Since the configuration is possible, it becomes possible to measure the integrated amount of light emission with extremely high accuracy and high speed.

In the case where the circuit element formed on the crystalline silicon is used, the optical carrier generated by the light emission from the light emitting element may affect the original circuit operation. Therefore, in this embodiment, the light receiving element is used. The light-shielding layer 411 is provided in a region other than the above portion, so that the effective light-receiving region is shown in FIG.
The area is indicated by B in the drawing, which is smaller than the light emitting area A described above.

By the way, the dimension A is determined by the resolution of the exposure apparatus. For example, in the case of 600 dpi, it is approximately 4
It becomes about 2 μm.

FIG. 5 is a schematic plan view of an exposure apparatus which is constructed by arranging a plurality of the integrated light emitting devices shown in FIG. 4, and FIG.
5A is a schematic view of a cross-sectional structure taken along the line 5a-a ′ of FIG. 5 and 6, the integrated light emitting device 50 is provided on the base 501.
Two Ms are arranged in a one-dimensional manner, and each integrated light emitting device 502 is connected to the wiring of the base body 501 by wire bonding 503, and electrically connected to an external device via a connector 504. Further, the above-mentioned base 501 is fixed in the housing 506, and the exposure apparatus of the present invention is constructed. Here, a light-transmissive sealing member 505 is provided on the base body 501 so as to cover the integrated light emitting device 502,
An inert gas is sealed in order to prevent the deterioration of the characteristics of the organic EL element.
An adsorbent or the like may be provided inside 05.

In the present invention, since the light emitting element array uses the integrated light emitting device 502, it is possible to reduce the number of electrical connections by the wire bonding 503 even though it is a driving method for all pixels at the same time. Since the mounting yield can be improved, it is possible to provide an inexpensive exposure apparatus as a result.

FIG. 7 is a cross-sectional view showing the structure of the main part when the above-described exposure apparatus of the present invention is mounted on a recording apparatus.
In FIG. 7, reference numerals 700 a to 700 d denote an exposure device, 701.
a to 701d are developing means, 702a to 702d are charging means, 703a to 703d are rod lens arrays, 704
a to 704d are transfer means, 705 is paper conveying means, 70
6a and 706b are paper feeding means, 707 is recording paper, and 7
Reference numerals 08a to 708d are photosensitive drums.

The operation of the above-described structure will be described. The light emitted from the exposure devices 700a to 700d is transferred to the photosensitive drums 708a to 70d by the rod lenses 703a to 703d.
8d, developed by developing means 701a to 701d, and transferred to recording sheet 7 by transfer means 704a to 704d.
It is transferred to 07. After that, the image is fixed by a fixing unit (not shown), and a series of electrophotographic recording is completed.

As described above, in the present invention,
Light emission of each light emitting point is converted into an optical signal of a light receiving element corresponding to each light emitting point, accumulated as an integrated amount, and the light emitting time of the light emitting element is controlled by comparing the integrated value with image data, and Since the driving method is used, the light amount of each light emitting unit can be controlled with high accuracy and high speed with respect to the image data, and even when the light emitting element changes in the light emitting characteristics under any circumstances, High quality images can always be provided.

In particular, in the tandem type electrophotographic recording apparatus described in the present embodiment, the present invention is a more effective means because of the features of downsizing, speedup and maintenance-free of the apparatus.

Further, in the present embodiment, an example in which light emission is started simultaneously for all pixels has been shown, but the same effect can be obtained by the present invention even in a driving system such as block driving.

Further, as shown in the present embodiment, the present invention is particularly effective in an electrophotographic recording apparatus in which the integrated quantity of light emitted from the light emitting element determines the image quality. Even when the present invention is applied to a display device such as a display, the present invention has an effect of improving the display image quality.

(Second Embodiment) A second embodiment of the present invention will be described below with reference to FIGS.

FIG. 8 is a block diagram of an embodiment of an integrated light emitting device which realizes the driving method of the present invention, and shows the structure of the integrated light emitting device in which light emitting elements are arranged for N pixels. 9 is a timing chart showing a driving method of the integrated light emitting device of the form shown in FIG. 8, FIG. 10 is a schematic diagram of a sectional structure of the integrated light emitting device of the form shown in FIG. 8, and FIG.
2 is a schematic plan view of an exposure apparatus configured by using the integrated light emitting device having the sectional structure shown in FIG.

In the present embodiment, as shown in FIG. 8, the portion for converting the image data into an analog signal and reading it into the comparator provided in each pixel has a configuration different from that of the first embodiment. The operation of this embodiment will be described below with reference to FIGS.

In FIG. 8, the image data DATA is first converted into an analog signal by the DA converter 801, and is sent to the data input line 803 common to all pixels via the buffer amplifier 802. On the other hand, the shift register 804
Thus, the first sample hold circuit 805 provided in each pixel operates sequentially and holds the analog signal of the data input line 803.

After the image data for all pixels is held in the first sample hold circuit 805, the light receiving element is reset to the initial state by the reset pulse RES, and then the first pulse sample hold is performed for all pixels simultaneously by the latch pulse LA. The image data held in the circuit 805 is read into the second sample hold circuit 807 via the buffer amplifier 806.

Therefore, in the above state, the signal of the reset state of the light receiving element and the image data after D-A conversion are input to the comparator 107 shown in FIG.

The operation from this point onward is similar to that of the first embodiment.

In the present embodiment, the circuit scale per pixel can be reduced, so that a more inexpensive exposure apparatus can be provided.

FIG. 10 is a schematic view of a cross-sectional structure of the integrated light emitting device according to this embodiment.

In FIG. 10, on an insulating substrate 1001, an amorphous silicon PIN photodiode 1002 which serves as a light receiving element, and a polycrystalline silicon NMOS transistor 100 which constitutes peripheral circuits such as a driving circuit and a storage circuit are formed.
3, and polycrystalline silicon PMOS transistor 1004
In addition, if necessary, a capacitive element (not shown),
A resistance element (not shown) may be formed.

Insulating substrate 10 on which the above circuit elements are formed
01 through the insulating layer 405, the first light-transmissive conductive film 406 and the organic hole transport layer 40 that form the organic EL element.
7, organic electron transport layer 408, second light transmissive conductive film 40
9 and a protective film 410 are sequentially stacked.

In FIG. 10, the first light transmissive conductive film 40 is used.
6 and the portion C defined by the second light transmissive conductive film 409 serves as a main light emitting region, and light emitted from the organic EL element can be extracted from both the protective film 410 direction and the transparent substrate 1001 direction.

Further, in the present embodiment, the amorphous silicon PIN photodiode 100 which becomes the light receiving element is used.
A metal electrode 1005 is provided as the second lower electrode,
The light transmitted through the amorphous silicon PIN photodiode 1002 serving as the light receiving element is reflected by the metal electrode 1005, so that the light utilization efficiency can be increased.

In FIG. 11, on the insulating substrate 1001, in addition to the above-mentioned light emitting element and light receiving element array 1101 and other circuit elements 1102, a semiconductor chip 1103 for driving and controlling the above elements and signal processing. Are provided and electrically connected to the wiring formed on the insulating substrate 1001. Further, the input / output terminals of the semiconductor chip 1103 described above are electrically connected to an external device via the connector 504.

Further, as in the first embodiment, a light-transmissive sealing member 505 is provided on the insulating substrate 1001 so as to cover the integrated light emitting device.

As shown in this embodiment, the present invention can also be formed by using a general thin film semiconductor forming process and an organic EL process.

Furthermore, in the case of the present embodiment, by using a large insulating substrate, it is possible to consistently process up to the process immediately before the connector mounting, so that a more inexpensive exposure apparatus can be provided. Will also be possible.

Needless to say, in this embodiment,
Since the organic EL element is laminated on the amorphous silicon PIN photodiode 1002, the amorphous silicon PIN photodiode 1002 described above is used.
It is possible to provide an exposure apparatus that can always obtain a high-quality image even if the light-emitting characteristics of the organic EL element fluctuate by performing the storage operation.

[0073]

As described above, by using the driving method of the present invention, even when a light-emitting element whose light emission characteristics change over time, such as an organic EL element, is used, an image is always displayed. Since the method of driving the integrated light emitting device that can obtain the amount of light emission corresponding to the data and the method of driving the exposure device using the integrated light emitting device can be realized by a device having a simple circuit configuration, a high speed and high quality image can be obtained. It is possible to provide an exposure apparatus, a recording apparatus, and the like that can obtain the cost at low cost.

[Brief description of drawings]

FIG. 1 is a block diagram of an embodiment of an integrated light emitting device that realizes a driving method of the present invention.

FIG. 2 is an equivalent circuit diagram of a drive circuit and a storage circuit for one pixel of an embodiment of an integrated light emitting device that realizes the drive method of the present invention.

FIG. 3 is a timing chart showing a driving method of the integrated light emitting device of the form shown in FIG.

FIG. 4 is a schematic view of a cross-sectional structure of the integrated light emitting device of the form shown in FIG.

5 is a schematic view of a planar structure of an exposure apparatus configured using the integrated light emitting device having the sectional structure shown in FIG.

6 is a schematic diagram of a cross-sectional structure taken along the line aa ′ in FIG.

FIG. 7 is a cross-sectional view showing a main configuration of an embodiment of a recording apparatus equipped with an exposure apparatus that realizes the driving method of the present invention.

FIG. 8 is a block diagram of an embodiment of an integrated light emitting device that realizes the driving method of the present invention.

9 is a timing chart showing a driving method of the integrated light emitting device of the form shown in FIG.

10 is a schematic view of a cross-sectional structure of the integrated light emitting device of the form shown in FIG.

11 is a schematic diagram of a planar structure of an exposure apparatus configured by using the integrated light emitting device having the cross-sectional structure shown in FIG.

[Explanation of symbols]

101 light emitting element 102 light receiving element 103 drive circuit 104 control circuit 105 Storage circuit 106 DA converter 107 Comparator 108 shift register 109 latch circuit 110 shift register 111 Power supply control circuit 201 reset transistor 202 PMOS source follower circuit 401 crystalline silicon substrate 402 PN photodiode 403 NMOS transistor 404 PMOS transistor 405 insulation layer 406 Light-transmissive conductive film 407 Organic Hole Transport Layer 408 Organic Electron Transport Layer 409 Light-transmissive conductive film 410 Protective film 411 light shielding layer 501 base 502 Integrated light emitting device 503 wire bonding 504 connector 505 Light-transmissive sealing member 506 housing 700a-700d exposure apparatus 701a to 701d developing means 702a to 702d Charging means 703a to 703d Rod lens array 704a to 704d Transfer means 705 sheet conveying means 706a to 706b Paper feeding means 707 recording paper 708a to 708d Photosensitive drum 801 DA converter 802 buffer amplifier 803 Data input line 804 shift register 805 First sample and hold circuit 806 buffer amplifier 807 Second sample and hold circuit 1001 insulating substrate 1002 Amorphous silicon PIN photodiode 1003 Polycrystalline silicon NMOS transistor 1004 Polycrystalline silicon PMOS transistor 1005 metal electrode 1101 Light receiving element array 1102 Other circuit elements 1103 Semiconductor chip

Claims (5)

[Claims] 1. A light emitting element group comprising a plurality of light emitting elements,
In a method of driving an integrated light emitting device, which comprises at least a light receiving means for detecting light emission of the light emitting element, based on a comparison result of an integrated value of light amount detected by the light receiving means and image data, A method for driving an integrated light emitting device, comprising controlling a light emission time. 2. The method of driving an integrated light emitting device according to claim 1, wherein a plurality of light emitting elements are simultaneously started to emit light when the light emitting element group starts to emit light. 3. The driving of the integrated light emitting device according to claim 1, wherein the light emission of the light emitting element is terminated when the integrated value of the light amount reaches a value corresponding to the image data. Method. 4. A light receiving element group comprising light receiving elements provided corresponding to the respective light emitting elements included in the light emitting element group is used as the light receiving means.
4. The method for driving an integrated light emitting device according to any one of items 1 to 3. 5. A light emitting element group including a plurality of light emitting elements,
A driving method of an exposure apparatus including an integrated light emitting device, which comprises at least a light receiving unit for detecting light emission of the light emitting element, wherein the integrated light emitting device according to any one of claims 1 to 4. A method for driving an exposure apparatus, which uses a driving method.