JP2003198148A - Multilayer wiring board - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-density multilayer wiring board that can be designed to have a characteristic impedance of 45 Ω or over, and suits a substrate for a high-frequency circuit having a wiring width of 300 μm or over. <P>SOLUTION: The multilayer wiring board has a plurality of wiring layers comprising a plurality of insulation layers and conductors, and a non-through hole made to be conductive for electrically connecting between the wiring layers. At least a wiring having a width of 300 μm or over is formed on an outermost layer, and an insulation distance of wiring layer provided via the outermost wiring layer and the non-through hole is 150 μm is over. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high density multilayer wiring board on which a high frequency semiconductor chip is mounted.

[0002]

2. Description of the Related Art In recent years, with the development of electronic devices, demands for smaller size and lighter weight in addition to higher performance of electronic parts have become more and more strict. In particular, it is remarkable in the pursuit of convenience in portable wireless electronic devices represented by mobile phones. From such a background, multilayer wiring boards have been used to efficiently mount semiconductor chips and passive elements.
In this multilayer wiring board, high density and low cost are important issues. In addition to these requirements, the establishment of board design technology that satisfies the high frequency characteristics has become the most important issue for mobile radio equipment.

The most important item in board design technology is control of characteristic impedance. This is because if the impedances are not matched, reflection noise occurs and the circuit characteristics deteriorate. The characteristic impedance required for a wiring board is 45 to 75Ω, and an accuracy of ± 10%, preferably ± 5%, with respect to the required value is required.
Microstrip wiring is commonly used to control the characteristic impedance of wiring on a wiring board. The characteristic impedance: Z ₀ of this wiring can be obtained by Equation 1 (Source: Microwave)
Network Analysis; Microwa
ve Engineering, D.V. Pozar, J
OHN WILEY & SONS, INC. Publication).

[0004]

[Equation 1] However, W: wiring width d: insulating layer thickness ε _r : dielectric constant of insulating layer

Further, suppression of the amount of transmission loss (amount of signal attenuation) is also an important item. This is because signal attenuation causes deterioration of circuit characteristics. Causes of signal attenuation include conductor loss and dielectric loss. As a countermeasure against the conductor loss, it is known to secure the width of the wiring conductor, and it is required to have a width of 300 μm or more. Further, as a measure against dielectric loss, it is known to use an insulating material having a small dielectric loss tangent.

Build-up wiring boards are widely used as high-density multilayer wiring boards. In this, an insulating resin layer is sequentially stacked on a circuit board serving as a core to manufacture a multilayer wiring board. At this time, the thickness of the buildup insulating resin layer to be stacked is generally 50 to 100 μm. If it is less than 50 μm, it becomes difficult to secure insulation reliability, and if it exceeds 100 μm, it becomes difficult to control the flow during lamination and thickness variation easily occurs.

[0007]

As described above, when designing a high frequency substrate, it is necessary to control the characteristic impedance at 45 to 75Ω and secure a wiring conductor width of 300 μm or more. When the wiring width is 100 μm and 300 μm, the dielectric constant is 3.5 to 5.0 and the insulating layer thickness is 50.
Table 1 shows the characteristic impedance calculated by the above-described calculation formula when the thickness is set to ˜200 μm. The 100 μm wide wiring is a design rule that is commonly used in general build-up wiring boards. The calculation result shows that the characteristic impedance of the wiring of 100 μm width exceeds 45Ω, but the characteristic impedance of the wiring of 300 μm width can be secured to 45Ω or more only when the insulating layer thickness is 150 μm or more. However, it is difficult to find a commercially available build-up material having an insulating layer thickness of 150 μm or more. Further, it is possible to add two or more insulating layers to form an insulating layer having a thickness of 150 μm or more, but there arises a problem that the wiring layer is increased or the wiring density is reduced. The present invention has a characteristic impedance of 45
It is an object of the present invention to provide a high-density multilayer wiring board which can be designed to be Ω or more and which is suitable for a high frequency circuit substrate having a wiring width of 300 μm or more.

[0008]

[Table 1] Unit: Ω

[0009]

The present invention is characterized by the following. (1) A multilayer wiring board having a plurality of wiring layers made of a plurality of insulating layers and conductors and a non-through hole made into a conductor for electrically connecting the wiring layers, and a wiring having a width of 300 μm or more is the most suitable. A multilayer wiring board characterized in that an insulation distance between at least an outermost wiring layer and a wiring layer provided through the non-through hole is at least 150 μm in the outer wiring layer. (2) The multilayer wiring board according to (1), wherein the wiring having a width of 300 μm or more formed in the outermost wiring layer has a characteristic impedance of 45Ω or more and 75Ω or less. (3) The multilayer wiring board according to (1) or (2), wherein the non-through hole has an aspect ratio of 1 or more. (4) The multilayer wiring board according to (1) to (3), wherein the non-through hole has a hole diameter of 150 μm or less. (5) The multilayer wiring board according to (1) to (4), wherein the insulating layer adjacent to the outermost wiring layer is a resin reinforced with a glass base material. (6) The multilayer wiring board according to (5), wherein an inorganic filler is added to the resin reinforced with the glass base material. (7) The multilayer wiring board according to (6), wherein the inorganic filler added to the resin reinforced with the glass substrate is silica. (8) The dielectric constant at 1 GHz of the insulating layer adjacent to the outermost wiring layer is 5 or less (1) to (7)
The multilayer wiring board described in. (9) The multilayer wiring board according to (1) to (8), wherein the non-through hole is formed by laser light irradiation. (10) The multilayer wiring board according to (9), characterized in that the metal foil is left on the entire surface or a part of the surface of the substrate at the time of laser light irradiation. (11) 90 on the multilayer wiring board according to any one of (1) to (10)
A semiconductor device comprising a high-frequency semiconductor chip that operates at a frequency of 0 MHz or higher. (12) A wireless electronic device including the semiconductor device according to (11).

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION A multilayer wiring board used in an embodiment of the present invention has a plurality of wiring layers each composed of a plurality of insulating layers and conductors, and a conductive non-through hole for electrically connecting the wiring layers. And a wiring layer having a width of 300 μm or more is formed in at least the outermost wiring layer, and an insulation distance between the outermost wiring layer and the wiring layer provided through the non-through hole is 150 μm or more. It is characterized by By setting the wiring width to 300 μm or more, signal attenuation can be suppressed in the high frequency circuit, and the thickness of the insulating layer can be 15
By setting it to 0 μm or more, the characteristic impedance becomes 45
It can be designed above Ω. There is no particular upper limit to the wiring width, but it is practically 600 μm or less. In addition, it is difficult to make the IVH depth deep by making the pad hole small, and the thickness of the insulating layer is practically 300 μm or less. Further, the aspect ratio of the non-through hole is preferably 1 or more, and preferably 6 or less. The non-penetrating hole is an effective technique for increasing the density of the multilayer wiring board because it can reduce the prohibited area of wiring. Further, the diameter of the non-through hole is preferably as small as possible to secure the wiring area. Specifically, in order to suppress the land diameter of the non-through hole provided in the wiring layer to 300 μm or less, 1
The thickness is preferably 50 μm or less, and more preferably 50 μm or more. This is because if it is less than 50 μm, it becomes difficult to form a conductor in the hole.

The multilayer wiring board used in the embodiment of the present invention is characterized in that the insulating layer adjacent to the outermost wiring layer is a resin reinforced with a glass base material. By being reinforced with the glass base material, even if the thickness of the insulating layer is 150 μm or more, it is easier to control the thickness of the insulating layer as compared with the case without the glass base material.

The multilayer wiring board used in the embodiment of the present invention is characterized in that the insulating layer adjacent to the outermost wiring layer is a resin reinforced with a glass base material and an inorganic filler is added. It is a density multilayer wiring board. By adding the inorganic filler, workability is improved when the non-through holes are to be produced by laser light irradiation. This is because it is possible to reduce the difference between the optimum energy intensities in the laser processing of the glass base material and the resin, and to suppress the inner wall roughness of the hole after processing. As a result, the connection reliability of the non-through holes can be improved. As the inorganic filler, a silica filler having physical properties close to those of a glass substrate is preferable. Further, it is preferable that the metal foil is left on the entire surface or a part of the surface of the substrate when the laser light is irradiated. This is because it is effective in securing the adhesive strength between the outermost wiring layer and the insulating layer.

The multilayer wiring board used in the embodiment of the present invention is characterized in that the insulating layer adjacent to the outermost wiring layer has a dielectric constant of 5 or less at 1 GHz. When an insulating layer having a high dielectric constant is used, it is necessary to make the insulating layer thick in order to set the characteristic impedance to 45Ω or more. As a result, it becomes necessary to increase the hole diameter of the non-through holes (maximum diameter of the hole surface), and the wiring density decreases. Further, the preferable range of the dielectric constant is 2.1 or more and 5 or less, and more preferably 3.5 or more and 4.5 or less.

As the resin reinforced with the glass base material, there are widely used epoxy resins, polyimide resins and bismaleimide resins having excellent heat resistance, and polyphenyl ether resins having excellent dielectric properties. , Polyphenyl olein-based resin, cyanate-based resin, fluorine-based resin and the like can be used.

Commercially available epoxy resins reinforced with a glass substrate are GEA-E-67N and GE.
AE-679N, GEA-E-65N (K) (above,
Hitachi Chemical Co., Ltd., trade name), R-5610, R
-5610 / S, R-1661 / T, R-1551 (above, trade name of Matsushita Electric Works, Ltd.), EI-6781,
EI-6765, EI-6777 (above, Sumitomo Bakelite Co., Ltd., trade name), ES-3615, ES-3
307, ES-3807 (above, manufactured by Risho Industry Co., Ltd.,
Product name) etc. can be used. As the polyimide resin reinforced with the glass base material, G
IA-671N (manufactured by Hitachi Chemical Co., Ltd., trade name),
R-4600, R4670, R4680 / K (above, Matsushita Electric Works, Ltd. make, a brand name) etc. can be used. Also,
As the bismaleimide-based resin reinforced with a glass base material, commercially available GHPL-830, GHPL-
830HS, GHPL-830TF, GHPL-830
TF, GHPL-830RT, GHPL-830NB
(These are product names of Mitsubishi Gas Chemical Co., Inc.) and the like can be used. Further, as a resin reinforced with a glass base material and having excellent dielectric properties, GXA-67N is commercially available.
(Hitachi Chemical Co., Ltd., trade name), TLP-596
(Toshiba Chemical Co., Ltd., trade name), ES-3317
A, ES-3317 / E (above, manufactured by Risho Kogyo Co., Ltd.,
Product name) etc. can be used.

As the resin reinforced with a glass base material and added with an inorganic filler, GEA is commercially available.
-679F, GEA-679F (G), GRA-67N
(Above, product name of Hitachi Chemical Co., Ltd.), ES-3
305S (trade name, manufactured by Risho Kogyo Co., Ltd.) can be used.

Various methods have been developed for drilling a substrate with a laser beam. Among these methods, in order to secure the adhesive strength with the copper foil forming the circuit, it is desirable that the copper foil is left on the whole or a part of the substrate surface. The formal mask method, large window mask method, and copper foil direct method are known.
The conformal mask method is to form a window hole having a hole diameter to be processed by copper foil etching and remove the resin in the window with laser light. This method has a feature that the hole diameter matches the etched window hole diameter, so that there is a large margin for the energy fluctuation of the laser beam. In the large window mask method, a window hole having a diameter larger than the hole diameter to be laser processed is formed by copper foil etching, and then a hole having a desired diameter is laser processed. This method has the advantage that the unevenness of the processed shape can be easily controlled because the scattering of laser light is small. In addition, the copper foil direct method
The thin copper foil and resin are simultaneously removed by laser light. This method does not require a process of forming a window hole by etching a copper foil, and has a feature that the process is simple.

As the copper foil used for the conformal mask method and the large window mask method, a copper foil having a thickness of 9 μm or 12 μm used for a general high-density wiring board can be used. As such a copper foil, as a commercially available copper foil, S
TD / GTS series, MP / GTS series (above,
Furukawa Circuit Foil Co., Ltd., trade name), JTC
Series, LP series (above, Japan Energy Co., trade name), VP series, HV series (above, Fukuda Metal Foil & Powder Co., trade name), VLP series (Mitsui Mining & Smelting Co., trade name) ) Etc. can be used.

As the copper foil used in the copper foil direct method,
An ultra-thin copper foil having a thickness of 5 μm or less can be used. Further, a surface roughening treatment is necessary to suppress laser light reflection. The ultra-thin copper foil whose surface is roughened in advance is commercially available as F-DP5 / 35, F-DP3 / 35 (above, Furukawa Circuit Foil Co., Ltd., trade name), MT35M.
3, MT25M5 (above, Mitsui Mining & Smelting Co., Ltd. make, a brand name), etc. can be used. These commercial copper foils are 35 μm
It uses copper foil as a carrier. This carrier copper foil can be easily peeled off by hand immediately before laser processing. However, the present invention is not limited to the use of such a copper foil that has been subjected to surface roughening treatment in advance, and it is also possible to perform surface roughening by copper oxide treatment or micro etching treatment before laser processing. Is. Also, 9μm and 12μ
It is also possible to make the copper foil of m 5 μm or less by etching and roughen the surface thereof.

As a laser processing machine, a carbon dioxide gas laser is generally used for laser drilling a printed wiring board. However, it is not limited to the carbon dioxide gas laser, and a UV Young laser or an excimer laser may be used depending on the type of the substrate to be processed.

As the copper-clad laminate used for the circuit board to be the core, one having the same characteristics as the resin reinforced with the glass base material described above can be used. That is, widely used epoxy resins, polyimide resins and bismaleimide resins having excellent heat resistance, polyphenyl ether resins having excellent dielectric properties, polyphenyl olein resins, cyanate resins and fluorine. A resin or the like can be used. Commercially available epoxy-based copper-clad laminates include MCL-E-67, MCL-E-679,
MCL-E-65 (K), MCL-E-679F, MC
LE-679F (G), MCL-RO-67G (above, Hitachi Chemical Co., Ltd., trade name), R-5715
Series, R-1766 / T, R-1551 (above, Matsushita Electric Works, Ltd., trade name), ELC-4781, EL
C-4765, ELC-4777 (above, product name by Sumitomo Bakelite Co., Ltd.), CS-3665, CS-3
375, CS-3287 (above, manufactured by Risho Industry Co., Ltd.,
Product name) etc. can be used. Further, as the polyimide-based resin reinforced with the glass base material, commercially available products, M
CL-I-671 (manufactured by Hitachi Chemical Co., Ltd., trade name), R-4705, R4775, R4785 / K (above, manufactured by Matsushita Electric Works, Ltd.) can be used.
As the bismaleimide-based resin reinforced with a glass base material, CCL-830, CCL-
832, CCL-832HS, CCL-832TF, C
CL-832TF, CCL-832RT, CCL-83
2NB (above, product name by Mitsubishi Gas Chemical Co., Inc.) can be used. Further, as a resin reinforced with a glass base material and having excellent dielectric properties, a commercially available resin, MCL-L
X-67 (manufactured by Hitachi Chemical Co., Ltd., trade name), TLC
-W-596 (Toshiba Chemical Co., Ltd., trade name), C
S-3376A, CS-3376 / E, CS-3355
S (above, product name by Risho Kogyo Co., Ltd.) can be used.

[0022]

Embodiments of the present invention will be specifically described below with reference to embodiments. Example 1 A desired etching resist was formed on the surface of a double-sided copper foil-clad glass epoxy laminate MCL-E-679F (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.2 mm, and unnecessary. The copper foil was removed by etching to produce a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was roughened by blackening treatment containing sodium hypochlorite as a main component and reduction treatment containing dimethylaminoborane as a main component.

(1) Copper foil STD / GTS with a thickness of 9 μm
(Furukawa Circuit Foil Co., Ltd. product name),
(2) Two glass epoxy prepregs GEA-679F (manufactured by Hitachi Chemical Co., Ltd., trade name) with a thickness of 80 μm containing filler, (3) core circuit board, (4) thickness of 80 μ
Glass epoxy prepreg GEA-6 with m filler
Two 79F, (5) Copper foil STD / GTS with a thickness of 9 μm
In order of temperature, 170 ° C., pressure 2.5 MPa, and heating and pressurizing time 60 minutes. A desired etching resist is formed on the surface of this substrate, unnecessary copper foil is removed by etching, and a desired area is φ0.15 mm.
Windows were formed. Using a ML505GT type carbon dioxide gas laser manufactured by Mitsubishi Electric Corporation at the location of the window hole provided on the surface of the substrate, laser drilling was performed under the conditions of an output power of 26 mJ, a pulse width of 100 μs, and a number of shots of 6 times.

After ultrasonic cleaning and removal of the resin residue carbonized with the alkali permanganate solution, a cleaning catalyst is applied, adhesion is promoted, and electroless copper plating is performed.
An electroless copper plating layer of μm was formed. An etching resist was formed on necessary portions such as pads and circuit patterns on the surface of the substrate, and unnecessary copper was removed by etching to form an outer layer circuit. Solder resist PSR-
4000 AUS5 (Taiyo Ink, trade name) was applied by a roll coater to a thickness of 30 μm, dried and then exposed and developed to form a solder resist at a desired position. Then, electroless nickel plating of 3 μm and electroless gold plating of 0.1 μm were formed on the surface layer of the outer layer circuit pattern exposed portion to obtain a multilayer wiring board as shown in FIG. After the solder paste was printed on the connection pad pattern by screen printing and the semiconductor chips were aligned and arranged, the solder was melted using IR reflow, and the high frequency power IC was flip-chip mounted on the multilayer wiring board. . At the same time, passive element chip parts such as capacitors and inductors were also mounted at the same time. At this time, the wiring width to which the output part of the high frequency power IC is connected was set to 300 μm.

Example 2 A desired etching resist was formed on the surface of a double-sided copper foil-clad glass epoxy laminate MCL-E-679 (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.2 mm. Then, unnecessary copper foil was removed by etching to produce a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was roughened by blackening treatment containing sodium hypochlorite as a main component and reduction treatment containing dimethylaminoborane as a main component.

(1) Copper foil STD / GTS with a thickness of 9 μm
(Furukawa Circuit Foil Co., Ltd. product name),
(2) Glass epoxy prepreg GEA with a thickness of 80 μm
-679N (manufactured by Hitachi Chemical Co., Ltd., product name) 2
Sheet, (3) core circuit board, (4) two glass epoxy prepreg GEA-679N having a thickness of 80 μm, (5) copper foil STD / GTS having a thickness of 9 μm in this order, and a temperature of 170
The layers were integrated under a pressing condition of ° C, a pressure of 2.5 MPa, and a heating and pressing time of 60 minutes. A desired etching resist was formed on the surface of this substrate, unnecessary copper foil was removed by etching, and a window hole of φ0.15 mm was formed at a desired position. Mitsubishi Electric Corporation M
Output power 2 using L505GT carbon dioxide laser
Laser drilling was performed under the conditions of 6 mJ, pulse width 100 μs, and shot number 6 times. Subsequent multilayer wiring board process,
The mounting process was performed according to the first embodiment. The wiring width to which the high frequency power IC output section is connected was 300 μm.

Example 3 Desired on the surface of a low-dielectric constant / low-dielectric loss double-sided copper foil-clad laminate MCL-LX-67 (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.25 mm. The etching resist was formed, and unnecessary copper foil was removed by etching to prepare a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was subjected to a roughening treatment with an organic acid-based microetching agent CZ-8100B (manufactured by Mec Co., Ltd., trade name).

(1) Copper foil STD / GTS with a thickness of 9 μm
(Furukawa Circuit Foil Co., Ltd. product name),
(2) 150 μm thick low dielectric constant / low dielectric loss prepreg GXA-67N (Hitachi Chemical Co., Ltd., trade name), (3) core circuit board, (4) 150 μm thick low dielectric constant / low dielectric loss prepreg. GXA-67N, (5)
The copper foil STD / GTS having a thickness of 9 μm is stacked in this order, and the temperature is 21.
The layers were integrated under a pressing condition of 0 ° C., a pressure of 2.5 MPa, and a heating and pressing time of 60 minutes. A desired etching resist was formed on the surface of this substrate, unnecessary copper foil was removed by etching, and a window hole of φ0.15 mm was formed at a desired position. Using a ML505GT type carbon dioxide gas laser manufactured by Mitsubishi Electric Corporation, laser drilling was performed at the window hole provided on the surface of the substrate under the conditions of an output power of 26 mJ, a pulse width of 100 μs, and a number of shots of 6 times. Subsequent multilayer wiring board processes and mounting processes were performed according to the first embodiment. The wiring width to which the high frequency power IC output section is connected was 300 μm.

Example 4 A desired etching resist is formed on the surface of a double-sided copper foil-clad glass epoxy laminate MCL-E-679F (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.2 mm. Then, unnecessary copper foil was removed by etching to produce a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was roughened by blackening treatment containing sodium hypochlorite as a main component and reduction treatment containing dimethylaminoborane as a main component.

(1) Copper foil STD / GTS with a thickness of 9 μm
(Furukawa Circuit Foil Co., Ltd. product name),
(2) Two glass epoxy prepregs GEA-679F (manufactured by Hitachi Chemical Co., Ltd., trade name) with a thickness of 80 μm containing filler, (3) core circuit board, (4) thickness of 80 μ
Glass epoxy prepreg GEA-6 with m filler
Two 79F, (5) Copper foil STD / GTS with a thickness of 9 μm
In order of temperature, 170 ° C., pressure 2.5 MPa, and heating and pressurizing time 60 minutes. A desired etching resist is formed on the surface of this substrate, unnecessary copper foil is removed by etching, and a desired area is φ0.25 mm.
Windows were formed. An ML505GT type carbon dioxide gas laser manufactured by Mitsubishi Electric Corporation was used at a window hole provided on the surface of the substrate, with an output power of 10 mJ and a pulse width of 70 μs.
Laser drilling was performed under the condition of 6 shots and φ0.1
A 5 mm laser hole was made. Subsequent multilayer wiring board processes and mounting processes were performed according to the first embodiment. The wiring width to which the high frequency power IC output section is connected was 300 μm.

Example 5 A desired etching resist was formed on the surface of a double-sided copper foil-clad glass epoxy laminate MCL-E-679 (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.2 mm. Then, unnecessary copper foil was removed by etching to produce a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was roughened by blackening treatment containing sodium hypochlorite as a main component and reduction treatment containing dimethylaminoborane as a main component.

(1) Copper foil STD / GTS with a thickness of 9 μm
(Furukawa Circuit Foil Co., Ltd. product name),
(2) Glass epoxy prepreg GEA with a thickness of 80 μm
-679N (manufactured by Hitachi Chemical Co., Ltd., product name) 2
Sheet, (3) core circuit board, (4) two glass epoxy prepreg GEA-679N having a thickness of 80 μm, (5) copper foil STD / GTS having a thickness of 9 μm in this order, and a temperature of 170
The layers were integrated under a pressing condition of ° C, a pressure of 2.5 MPa, and a heating and pressing time of 60 minutes. A desired etching resist was formed on the surface of this substrate, unnecessary copper foil was removed by etching, and a window hole of φ0.25 mm was formed at a desired position. Using a ML505GT type carbon dioxide gas laser manufactured by Mitsubishi Electric Corporation, laser holes were drilled in the window holes provided on the surface of the substrate under the conditions of an output power of 10 mJ, a pulse width of 70 μs, and a number of shots of 6 to obtain φ0.15 mm. Laser holes were made. Subsequent multilayer wiring board processes and mounting processes were performed according to the first embodiment. The wiring width to which the high frequency power IC output section is connected was 300 μm.

Example 6 Desired on the surface of a low-dielectric constant / low-dielectric loss double-sided copper foil-clad laminate MCL-LX-67 (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.25 mm. The etching resist was formed, and unnecessary copper foil was removed by etching to prepare a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was subjected to a roughening treatment with an organic acid-based microetching agent CZ-8100B (manufactured by Mec Co., Ltd., trade name).

(1) Copper foil STD / GTS with a thickness of 9 μm
(Furukawa Circuit Foil Co., Ltd. product name),
(2) 150 μm thick low dielectric constant / low dielectric loss prepreg GXA-67N (Hitachi Chemical Co., Ltd., trade name), (3) core circuit board, (4) 150 μm thick low dielectric constant / low dielectric loss prepreg. GXA-67N, (5)
The copper foil STD / GTS having a thickness of 9 μm is stacked in this order, and the temperature is 21.
The layers were integrated under a pressing condition of 0 ° C., a pressure of 2.5 MPa, and a heating and pressing time of 60 minutes. A desired etching resist was formed on the surface of this substrate, unnecessary copper foil was removed by etching, and a window hole of φ0.25 mm was formed at a desired position. Using a ML505GT type carbon dioxide gas laser manufactured by Mitsubishi Electric Corporation, laser holes were drilled in the window holes provided on the surface of the substrate under the conditions of an output power of 10 mJ, a pulse width of 70 μs, and a number of shots of 6 to obtain φ0.15 mm. Laser holes were made. Subsequent multilayer wiring board processes and mounting processes were performed according to the first embodiment. The wiring width to which the high frequency power IC output section is connected was 300 μm.

Example 7 A desired etching resist was formed on the surface of a double-sided copper foil-clad glass epoxy laminate MCL-E-679F (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.2 mm. Then, unnecessary copper foil was removed by etching to produce a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was roughened by blackening treatment containing sodium hypochlorite as a main component and reduction treatment containing dimethylaminoborane as a main component.

(1) Copper foil MT35M3 (trade name, manufactured by Mitsui Mining & Smelting Co., Ltd.), which is a copper foil having a thickness of 3 μm and a carrier copper foil having a thickness of 35 μm, and (2) a glass epoxy prepreg GEA-679F (filler with a thickness of 80 μm). Hitachi Chemical Co., Ltd. product name, 2 sheets, (3) core circuit board, (4) 2 sheets of glass epoxy prepreg GEA-679F with a filler of 80 μm in thickness, (5) 3 μm in thickness
Copper foil MT35 in which 35 μm carrier copper foil is provided on the copper foil of
They were stacked in the order of M3, and laminated and integrated under a pressing condition of a temperature of 170 ° C., a pressure of 2.5 MPa, and a heating / pressing time of 60 minutes. After the carrier copper foil on the surface of this substrate was manually peeled off, laser drilling was performed using a ML505GT type carbon dioxide gas laser manufactured by Mitsubishi Electric Corporation under the conditions of an output power of 30 mJ, a pulse width of 15 μs, and a number of shots of 6 times. Laser holes of 0.15 mm were made. Subsequent multilayer wiring board processes and mounting processes were performed according to the first embodiment. High frequency power I
The wiring width to which the C output portion is connected was set to 300 μm.

Example 8 A desired etching resist was formed on the surface of a double-sided copper foil-clad glass epoxy laminate MCL-E-679 (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.2 mm. Then, unnecessary copper foil was removed by etching to produce a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was roughened by blackening treatment containing sodium hypochlorite as a main component and reduction treatment containing dimethylaminoborane as a main component.

(1) Copper foil MT35M3 (manufactured by Mitsui Mining & Smelting Co., Ltd.), which is a copper foil having a thickness of 3 μm and a carrier copper foil having a thickness of 35 μm, and (2) a glass epoxy prepreg GEA-679N (Hitachi Chemical Co., Ltd.) having a thickness of 80 μm. (Trade name) manufactured by Kogyo Co., Ltd., (3) core circuit board, (4) 80 μm thick glass epoxy prepreg GEA-679N
And (5) a copper foil MT35M3 having a thickness of 3 μm and a carrier copper foil of 35 μm on the copper foil having a thickness of 3 μm.
The layers were integrated under a pressing condition of ° C, a pressure of 2.5 MPa, and a heating and pressing time of 60 minutes. After peeling the carrier copper foil on the surface of this substrate by hand, ML505G manufactured by Mitsubishi Electric Corporation
Using a T-type carbon dioxide laser, laser drilling was performed under the conditions of an output power of 30 mJ, a pulse width of 15 μs, and a number of shots of 6 to make a laser hole of φ0.15 mm. Subsequent multilayer wiring board processes and mounting processes were performed according to the first embodiment. The wiring width to which the high frequency power IC output section is connected was 300 μm.

Example 9 Desired on the surface of a low-dielectric constant / low-dielectric loss double-sided copper foil-clad laminate MCL-LX-67 (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.25 mm. The etching resist was formed, and unnecessary copper foil was removed by etching to prepare a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was subjected to a roughening treatment with an organic acid-based microetching agent CZ-8100B (manufactured by Mec Co., Ltd., trade name).

(1) Copper foil MT35M3 (trade name, manufactured by Mitsui Mining & Smelting Co., Ltd.), which is a copper foil having a thickness of 3 μm and a carrier copper foil having a thickness of 35 μm, (2) a low dielectric constant of 150 μm /
Low dielectric loss prepreg GXA-67N (trade name, manufactured by Hitachi Chemical Co., Ltd.), (3) core circuit board, (4) 150 μm thick low dielectric constant / low dielectric loss prepreg GXA-
67 N, and (5) a copper foil MT35M3 having a carrier copper foil of 35 μm on a copper foil having a thickness of 3 μm, stacked in this order at a temperature of 210.
The layers were integrated under a pressing condition of ° C, a pressure of 2.5 MPa, and a heating and pressing time of 60 minutes. After peeling the carrier copper foil on the surface of this substrate by hand, ML505G manufactured by Mitsubishi Electric Corporation
Using a T-type carbon dioxide laser, laser drilling was performed under the conditions of an output power of 30 mJ, a pulse width of 15 μs, and a number of shots of 6 to make a laser hole of φ0.15 mm. Subsequent multilayer wiring board processes and mounting processes were performed according to the first embodiment. The wiring width to which the high frequency power IC output section is connected was 300 μm.

Example 10 A desired etching resist was formed on the surface of a double-sided copper foil-clad glass epoxy laminate MCL-E-679 (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.2 mm. Then, unnecessary copper foil was removed by etching to produce a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was roughened by blackening treatment containing sodium hypochlorite as a main component and reduction treatment containing dimethylaminoborane as a main component.

(1) Adhesive film with an adhesive thickness of 80 μm and 12 μm copper foil MCF-6000E (trade name, manufactured by Hitachi Chemical Co., Ltd.), (2) Core circuit board, (3) Adhesive thickness of 12 μm copper foil Adhesive film MCF
-6000E in order, temperature 170 ℃, pressure 2.5M
The layers were integrated under a pressing condition of Pa and a heating and pressing time of 60 minutes. After completely etching the surface copper foil of this substrate, (1) an adhesive film MCF-6000E with a 12 μm copper foil having an adhesive thickness of 80 μm (trade name, manufactured by Hitachi Chemical Co., Ltd.), (2) core circuit board, (3) ) Adhesive thickness 80μ
m adhesive film with copper foil MCF-6000E
In order of temperature, 170 ° C., pressure 2.5 MPa, and heating and pressurizing time 60 minutes. A desired etching resist is formed on the surface of this substrate, unnecessary copper foil is removed by etching, and a desired area is φ0.15 mm.
Windows were formed. Using a ML505GT type carbon dioxide gas laser manufactured by Mitsubishi Electric Corporation, laser drilling was performed at the window holes provided on the surface of the substrate under the conditions of an output power of 26 mJ, a pulse width of 80 μs, and a number of shots of 6 times. Subsequent multilayer wiring board processes and mounting processes were performed according to the first embodiment. The wiring width to which the high frequency power IC output section is connected is 3
It was set to 00 μm.

Comparative Example 1 A desired etching resist was formed on the surface of a double-sided copper foil-clad glass epoxy laminate MCL-E-679F (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.2 mm. Then, unnecessary copper foil was removed by etching to produce a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was roughened by blackening treatment containing sodium hypochlorite as a main component and reduction treatment containing dimethylaminoborane as a main component.

(1) Copper foil STD / GTS with a thickness of 9 μm
(Furukawa Circuit Foil Co., Ltd. product name),
(2) Glass epoxy prepreg with a thickness of 100 μm GEA-679F (manufactured by Hitachi Chemical Co., Ltd.,
(Trade name), (3) core circuit board, (4) thickness 100 μm
Filled Glass Epoxy Prepreg GEA-67
9F, (5) copper foil STD / GTS having a thickness of 9 μm are stacked in this order, temperature 170 ° C., pressure 2.5 MPa, heating and pressurizing time 6
The layers were integrated under a pressing condition of 0 minutes. A desired etching resist was formed on the surface of this substrate, unnecessary copper foil was removed by etching, and a window hole of φ0.15 mm was formed at a desired position. Using a ML505GT type carbon dioxide laser manufactured by Mitsubishi Electric Corporation at the window hole provided on the surface of the substrate,
Laser drilling was performed under the conditions of an output power of 26 mJ, a pulse width of 100 μs, and the number of shots 4 times. Subsequent multilayer wiring board processes and mounting processes were performed according to the first embodiment.
The wiring width to which the high frequency power IC output is connected is 300μ.
m.

Comparative Example 2 A desired etching resist was formed on the surface of a double-sided copper foil-clad glass epoxy laminate MCL-E-679F (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil thickness of 18 μm and a plate thickness of 0.2 mm. Then, unnecessary copper foil was removed by etching to produce a core circuit board having a desired circuit pattern. The circuit surface of this circuit board was roughened by blackening treatment containing sodium hypochlorite as a main component and reduction treatment containing dimethylaminoborane as a main component.

(1) Copper foil STD / GTS with a thickness of 9 μm
(Furukawa Circuit Foil Co., Ltd. product name),
(2) Glass epoxy prepreg with a thickness of 100 μm GEA-679F (manufactured by Hitachi Chemical Co., Ltd.,
(Trade name), (3) core circuit board, (4) thickness 100 μm
Filled Glass Epoxy Prepreg GEA-67
9F, (5) copper foil STD / GTS having a thickness of 9 μm are stacked in this order, temperature 170 ° C., pressure 2.5 MPa, heating and pressurizing time 6
The layers were integrated under a pressing condition of 0 minutes. A desired etching resist was formed on the surface of this substrate, unnecessary copper foil was removed by etching, and a window hole of φ0.15 mm was formed at a desired position. Using a ML505GT type carbon dioxide laser manufactured by Mitsubishi Electric Corporation at the window hole provided on the surface of the substrate,
Laser drilling was performed under the conditions of an output power of 26 mJ, a pulse width of 100 μs, and the number of shots 4 times. Subsequent multilayer wiring board processes and mounting processes were performed according to the first embodiment.
The wiring width to which the high frequency power IC output section is connected is 180μ
m.

The test method is as follows. (Characteristic impedance) Characteristic impedance measurement is T
DR (Time Domain Reflector)
50Ω coaxial cable SUCOFLEX104 / 100 (SUHNER) for digitizing oscilloscope system 83480A / 5450A / 54753A (manufactured by Agilent Technologies, Inc.) for high-speed circuits with functions
High-frequency signal measurement probe MIC
ROPRPBE ACP50 (GSG250 type, Cas
A measuring system connected to Cade Inc., trade name) was used. Evaluation wiring having the same wiring width as the wiring to which the high-frequency power IC output section is connected was prepared in advance on a multilayer wiring board, and the above-mentioned probe was brought into contact with the measurement terminal of this evaluation wiring to measure the reflection characteristics. From this result, the characteristic impedance was calculated using the internal calculation function. Evaluation wiring length is 50m
m.

(Transmission loss amount) The transmission loss amount was measured by using a network analyzer 8753ES (trade name, manufactured by Agilent Technology Co., Ltd.) and a 50Ω coaxial cable SUCO.
FLEX104 / 100 (made by SUHNER, trade name)
High frequency signal measurement probe MICROPRPBE via
A measurement system connected to ACP50 (GSG250 type, Cascade company, trade name) was used. Using the same evaluation wiring as the characteristic impedance measurement, S2 which is the transmission characteristic
1 was measured to calculate the amount of transmission loss at a frequency of 1 GHz.

(Connection Reliability Test) An evaluation pattern consisting of 100 non-through holes and wiring patterns connecting the holes was prepared in advance in a multilayer wiring board and used as a test piece. Using a thermal shock tester conducted in a gas phase, the test conditions were a step of leaving the sample in a low temperature atmosphere of -55 ° C for 15 minutes and then in a high temperature atmosphere of 125 ° C for 15 minutes, which was one cycle. When changing from a low temperature atmosphere to a high temperature atmosphere and vice versa, the sample was left to stand in a room temperature atmosphere for 5 minutes. The conduction resistance of the connection portion was measured every 100 cycles, and the point where the resistance increased by 10% or more from the initial value was taken as the end point.

[0050]

[Table 2]

In each of Examples 1 to 10, the wiring width of the outermost wiring layer is 300 μm or more and the insulation distance between the outermost wiring layer and its second wiring layer is 150 μm or more. It is a plate. The mounting boards using these all have a characteristic impedance of over 45Ω and a transmission loss of less than 0.4 dB, and are excellent in electrical characteristics. In addition, the connection reliability is excellent, exceeding 1000 times. In particular, Examples 1, 4, and 7 using the glass epoxy prepreg containing the filler have a connection reliability of more than 2000 times and are particularly excellent. Further, compared with Example 10, Examples 1 to 9 have a short manufacturing process of the multilayer wiring board and are excellent in economic efficiency.

In Comparative Example 1, the outermost wiring layer and its second
Since the insulation distance from the wiring layer is as thin as 100 μm, the characteristic impedance is low. Therefore, signal reflection occurs and the amount of transmission loss is large. In Comparative Example 2, the insulation distance between the outermost wiring layer and the second wiring layer is 100 μm, but the wiring width is 180 μm.
Since it is as thin as m, the characteristic impedance exceeds 45Ω.
However, because the wiring width is made thinner, the amount of conductor loss increases,
The amount of transmission loss is large.

[0053]

As described above, according to the present invention,
It is possible to provide a multilayer wiring board having a characteristic impedance of 45Ω or more and a small amount of transmission loss at high frequencies.

[Brief description of drawings]

FIG. 1 is a sectional view showing a part of the structure of an embodiment of the present invention.

[Explanation of symbols]

1. Build-up insulation layer, 2. Core substrate layer 3. Non-through hole 4. Conductor wiring of 300 μm or more 5. Conductor wiring of less than 300 μm 6. Ground layer

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H05K 3/00 H05K 3/00 N (72) Inventor Etsuo Watanabe 1500 Ogawa, Shimodate City, Ibaraki Prefecture Hitachi Chemical Co., Ltd. (72) Inventor, Masashi Kamoshida, 1500 Ogawa, Ogawa, Shimodate-shi, Ibaraki Hitachi Chemical Co., Ltd. Research Institute F-term (reference) 5E346 AA02 AA12 AA15 AA22 AA32 AA43 AA51 BB02 BB11 BB13 BB15 CC04 CC08 CC09 DD02 DD12 DD23 DD32 EE06 EE09 EE13 FF01 FF04 FF45 GG15 GG17 GG22 GG28 HH03 HH11 HH25 HH26 HH31

Claims (12)

[Claims] 1. A multi-layer wiring board having a plurality of wiring layers each composed of a plurality of insulating layers and conductors and a non-through hole made into a conductor for electrically connecting the wiring layers, and a wiring having a width of 300 μm or more. Is formed on at least the outermost wiring layer, and the insulation distance between the outermost wiring layer and the wiring layer provided through the non-through hole is 150 μm or more. 2. The characteristic impedance of a wiring having a width of 300 μm or more formed in the outermost wiring layer is 45Ω or more 75
The multilayer wiring board according to claim 1, which has an Ω or less. 3. The multilayer wiring board according to claim 1, wherein the non-through hole has an aspect ratio of 1 or more. 4. The multilayer wiring board according to claim 1, wherein the non-through hole has a hole diameter of 150 μm or less. 5. The insulating layer adjacent to the outermost wiring layer is a resin reinforced with a glass base material.
4. The multilayer wiring board described in 4. 6. An inorganic filler is added to the resin reinforced with the glass base material.
The multilayer wiring board described in. 7. The multilayer wiring board according to claim 6, wherein the inorganic filler added to the resin reinforced with the glass base material is silica. 8. A 1 GHz GHz insulating layer adjacent to the outermost wiring layer
The multilayer wiring board according to any one of claims 1 to 7, wherein the dielectric constant is 5 or less. 9. The multilayer wiring board according to claim 1, wherein the non-through hole is formed by laser light irradiation. 10. The multilayer wiring board according to claim 9, wherein the metal foil is left on the entire surface or a part of the surface of the substrate at the time of laser light irradiation. 11. A semiconductor device comprising a multi-layer wiring board according to claim 1 mounted with a high-frequency semiconductor chip operating at a frequency of 900 MHz or higher. 12. A wireless electronic device comprising the semiconductor device according to claim 11.