JP2003179175A - Wiring board - Google Patents
Wiring boardInfo
- Publication number
- JP2003179175A JP2003179175A JP2001376303A JP2001376303A JP2003179175A JP 2003179175 A JP2003179175 A JP 2003179175A JP 2001376303 A JP2001376303 A JP 2001376303A JP 2001376303 A JP2001376303 A JP 2001376303A JP 2003179175 A JP2003179175 A JP 2003179175A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- insulating base
- low melting
- brazing material
- wiring board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10W72/884—
-
- H10W90/734—
-
- H10W90/754—
Landscapes
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
(57)【要約】
【課題】配線基板の接続パッドと外部電気回路とを接続
する低融点ロウ材に破断が発生し、半導体素子の外部電
気回路への接続信頼性が低下する。
【解決手段】電気絶縁材料から成り、表面に半導体素子
搭載部を有する四角形状の絶縁基体1と、該絶縁基体1
の下面に形成された多数の接続パッド6と、前記絶縁基
体1の前記搭載部から前記接続パッド6にかけて導出さ
れる複数個の配線導体2とから成る配線基板4であっ
て、前記絶縁基体1下面のコーナー部に補助パッド9を
形成するとともに該補助パッド9のうち前記絶縁基体1
の対角線上に位置する外縁部に、円弧状の切り欠き部を
設けた。
(57) Abstract: A breakage occurs in a low melting point brazing material for connecting a connection pad of a wiring board to an external electric circuit, and the reliability of connection of the semiconductor element to the external electric circuit is reduced. A square-shaped insulating base made of an electrically insulating material and having a semiconductor element mounting portion on a surface, and the insulating base 1
A wiring board 4 comprising: a large number of connection pads 6 formed on the lower surface of the substrate; and a plurality of wiring conductors 2 extending from the mounting portion of the insulating base 1 to the connection pads 6. An auxiliary pad 9 is formed at a corner portion of the lower surface, and the insulating base 1 of the auxiliary pad 9 is formed.
An arc-shaped notch is provided at the outer edge located on the diagonal line of.
Description
【0001】[0001]
【発明の属する技術分野】本発明は半導体素子収納用パ
ッケージ等に用いられる配線基板に関し、詳しくは実装
した半導体素子の各電極を所定の外部電気回路に長期間
にわたり安定して電気的に接続させることができる配線
基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for a package for accommodating semiconductor elements, and more particularly, to stably and electrically connect each electrode of a mounted semiconductor element to a predetermined external electric circuit for a long period of time. The present invention relates to a wiring board that can be used.
【0002】[0002]
【従来の技術】従来、半導体素子が搭載される配線基板
は、ガラスセラミック焼結体等の電気絶縁材料から成
り、その表面に半導体素子が搭載される搭載部を有する
絶縁基体と、絶縁基体の半導体素子搭載部またはその周
辺から下面にかけて導出される、例えば銅や銀等の金属
粉末から成る複数個の配線導体と、絶縁基体の下面に形
成され、前記配線導体と電気的に接続された複数個の平
面四角形状をなす接続パッドとから構成されており、絶
縁基体の搭載部に半導体素子をガラス、樹脂、ロウ材等
から成る接着剤を介して接着固定させるとともに半導体
素子の各電極と配線導体とをボンディングワイヤ等の電
気的接続手段を介して電気的に接続し、しかる後、必要
に応じて前記半導体素子を蓋体や封止樹脂で気密封止さ
せることによって半導体装置となる。2. Description of the Related Art Conventionally, a wiring board on which a semiconductor element is mounted is made of an electrically insulating material such as a glass ceramic sintered body, and has an insulating base having a mounting portion on which the semiconductor element is mounted, and an insulating base. A plurality of wiring conductors made of, for example, a metal powder such as copper or silver, which is led out from the semiconductor element mounting portion or its periphery to the lower surface, and a plurality of wiring conductors formed on the lower surface of the insulating base and electrically connected to the wiring conductors. Each of the connection pads having a rectangular shape in a plane, and the semiconductor element is adhered and fixed to the mounting portion of the insulating substrate through an adhesive made of glass, resin, brazing material, and each electrode and wiring of the semiconductor element. The conductor is electrically connected via an electrical connecting means such as a bonding wire, and then the semiconductor element is hermetically sealed with a lid or a sealing resin if necessary. The body system.
【0003】かかる半導体装置は、外部電気回路基板上
に、該外部電気回路基板の回路配線と絶縁基体下面の接
続パッドとが、間に錫−鉛半田等の低融点ロウ材を挟ん
で対向するよう載置させ、しかる後、前記低融点ロウ材
を約200℃〜300℃の温度で加熱溶融させ、外部電
気回路基板の回路配線と絶縁基体下面の接続パッドとを
接合させることにより外部電気回路基板に実装され、同
時に配線基板に搭載されている半導体素子の各電極が配
線導体および低融点ロウ材を介して外部電気回路基板に
電気的に接続されることとなる。In such a semiconductor device, on the external electric circuit board, the circuit wiring of the external electric circuit board and the connection pad on the lower surface of the insulating substrate face each other with a low melting point brazing material such as tin-lead solder interposed therebetween. Then, the low melting point brazing material is heated and melted at a temperature of about 200 ° C. to 300 ° C., and the circuit wiring of the external electric circuit board and the connection pad on the lower surface of the insulating substrate are joined to each other to form an external electric circuit. Each electrode of the semiconductor element mounted on the board and simultaneously mounted on the wiring board is electrically connected to the external electric circuit board through the wiring conductor and the low melting point brazing material.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来の半導体素子が搭載される配線基板は絶縁基体がガラ
スセラミック焼結体等のセラミックス材料で形成されて
おり、その熱膨張係数が約3×10-6/℃〜10×10
-6/℃であるのに対し、外部電気回路基板は一般にガラ
スエポキシ樹脂等の樹脂材で形成されており、その熱膨
張係数が30×10-6/℃〜50×10-6/℃であり、
大きく相異することから、配線基板の接続パッドと外部
電気回路基板の回路配線とを低融点ロウ材を介して接合
させて外部電気回路基板上に半導体装置を実装した後、
半導体素子の作動時に発する熱が配線基板の絶縁基体と
外部電気回路基板に繰り返し作用すると、両者間に両者
の熱膨張係数の差に起因して大きな熱応力が繰り返し生
じ、この熱応力で接続パッドと低融点ロウ材との界面付
近で低融点ロウ材に破断が発生し、半導体素子と外部電
気回路との電気的接続が短期間で破れてしまうという問
題があった。However, in the wiring board on which the conventional semiconductor element is mounted, the insulating substrate is made of a ceramic material such as a glass ceramic sintered body, and its thermal expansion coefficient is about 3 × 10. -6 / ℃ ~ 10 × 10
The external electric circuit board is generally formed of a resin material such as glass epoxy resin, while its thermal expansion coefficient is 30 × 10 -6 / ° C to 50 × 10 -6 / ° C. Yes,
Because of the large difference, after connecting the connection pad of the wiring board and the circuit wiring of the external electric circuit board via the low melting point brazing material and mounting the semiconductor device on the external electric circuit board,
When the heat generated during the operation of the semiconductor element repeatedly acts on the insulating substrate of the wiring board and the external electric circuit board, a large thermal stress is repeatedly generated between them due to the difference in the thermal expansion coefficient between the two, and the thermal stress causes the connection pad There is a problem that the low melting point brazing material is ruptured near the interface between the low melting point brazing material and the low melting point brazing material, and the electrical connection between the semiconductor element and the external electric circuit is broken in a short period of time.
【0005】そこで、上記欠点を解消するために絶縁基
体のコーナー部に補助パッドを設け、この補助パッドを
外部電気回路基板に設けたダミーのパッド等に低融点ロ
ウ材を介し接合することによって接続パッドと低融点ロ
ウ材との間に作用する熱応力を除去し、接続パッドと低
融点ロウ材との接合を強固として半導体素子と外部電気
回路との電気的接続の信頼性を向上させるという手段が
考えられる。Therefore, in order to solve the above drawbacks, auxiliary pads are provided at the corners of the insulating substrate, and the auxiliary pads are connected to the dummy pads or the like provided on the external electric circuit board by bonding them with a low melting point brazing material. Means for removing the thermal stress acting between the pad and the low melting point brazing material, strengthening the bond between the connection pad and the low melting point brazing material, and improving the reliability of the electrical connection between the semiconductor element and the external electric circuit. Can be considered.
【0006】しかしながら、配線基板の絶縁基体のコー
ナー部に補助パッドを設けた場合、外部電気回路基板上
に配線基板を実装した直後は、補助パッドと外部電気回
路基板に設けたダミーのパッド等との接合が接続パッド
と低融点ロウ材との間に作用する熱応力を除去し、接続
パッドと低融点ロウ材との界面付近で低融点ロウ材に破
断が生じるのを有効に防止することができるものの配線
基板の絶縁基体と外部電気回路基板との間に熱応力が繰
り返し発生作用した際、補助パッドと低融点ロウ材との
界面付近、特に絶縁基体の対角線方向の補助パッドと低
融点ロウ材との界面付近の低融点ロウ材に破断が発生し
て接続パッドと低融点ロウ材との間に熱応力が作用する
のを除去することができなくなり、その結果、配線基板
の絶縁基体と外部電気回路基板との間に発生する熱応力
によって接続パッドと低融点ロウ材との界面付近で低融
点ロウ材に破断が発生し、半導体素子と外部電気回路と
の電気的接続の信頼性を長期間にわたり維持することが
できないという欠点を有する。However, when the auxiliary pad is provided at the corner portion of the insulating substrate of the wiring board, immediately after the wiring board is mounted on the external electric circuit board, the auxiliary pad and the dummy pad provided on the external electric circuit board are provided. Can remove the thermal stress acting between the connection pad and the low melting point brazing material and effectively prevent the low melting point brazing material from breaking near the interface between the connection pad and the low melting point brazing material. Although it is possible, when thermal stress is repeatedly generated between the insulating substrate of the wiring board and the external electric circuit board, the auxiliary pad and the low melting point solder are located near the interface between the auxiliary pad and the low melting point brazing material, especially in the diagonal direction of the insulating substrate. It is impossible to remove the thermal stress acting between the connection pad and the low melting point brazing material due to breakage of the low melting point brazing material near the interface with the material. External The thermal stress generated between the air circuit board and the low melting point brazing material breaks near the interface between the connection pad and the low melting point brazing material, increasing the reliability of the electrical connection between the semiconductor element and the external electric circuit. It has the drawback that it cannot be maintained for a period of time.
【0007】特に、近時、配線基板の小型化が著しく、
また、半導体素子等の電極数の増加に対応して接続パッ
ドの数も多くなり、縁基体の下面に高密度で形成される
ようになりつつあるため、補助パッドの面積をあまり大
きくすることできず、配線基板と外部電気回路基板との
接続信頼性の向上は、さらに難しくなってきている。Particularly, in recent years, the miniaturization of wiring boards has become remarkable,
In addition, the number of connection pads has increased in response to the increase in the number of electrodes of semiconductor elements and the like, and the density of the connection pads has been increasing to be formed on the lower surface of the edge substrate. Therefore, it is becoming more difficult to improve the connection reliability between the wiring board and the external electric circuit board.
【0008】[0008]
【課題を解決するための手段】本発明の配線基板は、電
気絶縁材料から成り、表面に半導体素子搭載部を有する
四角形状の絶縁基体と、該絶縁基体の下面に形成された
多数の接続パッドと、前記絶縁基体の前記搭載部から前
記接続パッドにかけて導出される複数個の配線導体とか
ら成る配線基板であって、前記絶縁基体下面のコーナー
部に補助パッドを形成するとともに該補助パッドのうち
前記絶縁基体の対角線上に位置する外縁部に、円弧状の
切り欠き部を設けたことを特徴とするものである。A wiring board of the present invention is made of an electrically insulating material and has a rectangular insulating base having a semiconductor element mounting portion on its surface, and a large number of connection pads formed on the lower surface of the insulating base. And a plurality of wiring conductors led out from the mounting portion of the insulating base to the connection pad, wherein an auxiliary pad is formed at a corner portion of the lower surface of the insulating base, and It is characterized in that an arcuate cutout portion is provided at an outer edge portion located on a diagonal line of the insulating base.
【0009】本発明の配線基板によれば、絶縁基体下面
のコーナー部に補助パッドを形成するとともに、該補助
パッドのうち前記絶縁基体下面の対角線上に位置する外
縁部に円弧状の切り欠きを設けたことから、補助パッド
を外部電気回路基板に設けたダミーのパッド等に低融点
ロウ材を介し接合することによって接続パッドと低融点
ロウ材との間に作用する熱応力を除去することができ、
同時に補助パッドと低融点ロウ材の界面で絶縁基体の対
角線方向に作用する配線基板の絶縁基体と外部電気回路
基板との熱膨張係数差に起因する熱応力は補助パッドの
円弧状の切り欠き部で分散されて補助パッドと低融点ロ
ウ材との界面付近、特に絶縁基体の対角線方向の補助パ
ッドと低融点ロウ材との界面付近の低融点ロウ材に破断
が生じることはなく、これによって接続パッドと低融点
ロウ材との接合が長期間に亘り維持することができ、半
導体素子と外部電気回路との電気的接続の信頼性を極め
て優れたものとなすことがでる。According to the wiring board of the present invention, the auxiliary pad is formed at the corner portion of the lower surface of the insulating base, and the outer edge portion of the auxiliary pad located on the diagonal of the lower surface of the insulating base is provided with an arcuate notch. Since the auxiliary pad is bonded to the dummy pad or the like provided on the external electric circuit board via the low melting point brazing material, the thermal stress acting between the connection pad and the low melting point brazing material can be removed. You can
At the same time, at the interface between the auxiliary pad and the low melting point brazing material, the thermal stress caused by the difference in thermal expansion coefficient between the insulating base of the wiring board and the external electric circuit board acting in the diagonal direction of the insulating base is the arc-shaped cutout portion of the auxiliary pad. It is not possible to break the low melting point brazing material dispersed near the interface between the auxiliary pad and the low melting point brazing material, especially near the interface between the auxiliary pad and the low melting point brazing material in the diagonal direction of the insulating substrate, and thereby the connection is made. The bond between the pad and the low melting point brazing material can be maintained for a long period of time, and the reliability of the electrical connection between the semiconductor element and the external electric circuit can be made extremely excellent.
【0010】[0010]
【発明の実施の形態】次に本発明を添付の図面を基にし
て詳細に説明する。図1は、本発明の配線基板を使用し
た半導体素子収納用パッケージの一実施例を示す断面
図、図2はその下面図、図3は要部拡大平面図であり、
1は絶縁基体、2は配線導体である。この絶縁基体1と
配線導体2とで半導体素子3を搭載する配線基板4が構
成される。DETAILED DESCRIPTION OF THE INVENTION The present invention will now be described in detail with reference to the accompanying drawings. 1 is a cross-sectional view showing an embodiment of a package for housing a semiconductor device using a wiring board of the present invention, FIG. 2 is a bottom view thereof, and FIG. 3 is an enlarged plan view of a main part,
Reference numeral 1 is an insulating substrate, and 2 is a wiring conductor. The insulating substrate 1 and the wiring conductor 2 constitute a wiring board 4 on which the semiconductor element 3 is mounted.
【0011】前記絶縁基体1は、例えばガラスセラミッ
ク焼結体、酸化アルミニウム質焼結体、窒化アルミニウ
ム質焼結体、ムライト質焼結体、炭化珪素質焼結体等の
電気絶縁材料から成り、その上面に半導体素子3が搭載
収容される凹部1aを有し、該凹部1a底面には半導体
素子3がガラスや樹脂、ロウ材等の接着材を介して接着
固定される。The insulating substrate 1 is made of an electrically insulating material such as a glass ceramic sintered body, an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body or a silicon carbide sintered body. The upper surface thereof has a concave portion 1a in which the semiconductor element 3 is mounted and accommodated, and the semiconductor element 3 is bonded and fixed to the bottom surface of the concave portion 1a via an adhesive material such as glass, resin, or brazing material.
【0012】前記絶縁基体1は、例えば酸化アルミニウ
ム質焼結体から成る場合、酸化アルミニウム、酸化珪
素、酸化カルシウム、酸化マグネシウム等の原料粉末に
適当な有機バインダー、溶剤を添加混合して泥漿状のセ
ラミックスラリーとなすとともに該セラミックスラリー
を従来周知のドクターブレード法やカレンダーロール法
等のシート成型技術を採用してシート状のセラミックグ
リーンシート(セラミック生シート)を得、しかる後、
前記セラミックグリーンシートを切断加工や打ち抜き加
工により適当な形状とするとともにこれを複数枚積層
し、最後に前記積層されたセラミックグリーンシートを
還元雰囲気中、約1600℃の温度で焼成することによ
って製作される。When the insulating substrate 1 is made of, for example, an aluminum oxide sintered body, a powdery raw material such as aluminum oxide, silicon oxide, calcium oxide, magnesium oxide, etc. is mixed with an appropriate organic binder and a solvent, and mixed in a slurry form. A sheet-shaped ceramic green sheet (ceramic green sheet) is obtained by using a sheet forming technique such as a doctor blade method or a calendar roll method which is conventionally well-known as well as forming the ceramic slurry.
It is manufactured by forming the ceramic green sheets into an appropriate shape by cutting or punching, stacking a plurality of these, and finally firing the stacked ceramic green sheets at a temperature of about 1600 ° C. in a reducing atmosphere. It
【0013】また前記絶縁基体1は、その凹部1a周辺
から側面を介し下面にかけて多数の配線導体2が被着形
成されており、該配線導体2の凹部1a周辺部位には半
導体素子3の各電極がボンディングワイヤ5を介して電
気的に接続され、また絶縁基体1下面に導出された部位
には配線導体2と電気的に接続する複数の平面四角形状
をなす接続パッド6が形成されている。A large number of wiring conductors 2 are formed on the insulating substrate 1 from the periphery of the concave portion 1a to the lower surface through the side surface. The electrodes of the semiconductor element 3 are formed in the peripheral portion of the concave portion 1a of the wiring conductor 2. Are electrically connected via bonding wires 5, and a plurality of connection pads 6 each having a rectangular shape in plan view are formed at a portion led out to the lower surface of the insulating substrate 1 so as to be electrically connected to the wiring conductor 2.
【0014】前記配線導体2および接続パッド6は、半
導体素子3の電極を外部電気回路に接続する作用をな
し、例えばタングステン、モリブデン、マンガン等の高
融点金属からなり、タングステン等の高融点金属粉末に
有機溶剤、溶媒を添加混合して得た金属ペーストを絶縁
基体1となるセラミックグリーンシートに予め従来周知
のスクリーン印刷法により所定パターンに印刷塗布して
おくことによって、絶縁基体1の凹部1a周辺から下面
にかけて被着形成される。The wiring conductor 2 and the connection pad 6 have a function of connecting the electrode of the semiconductor element 3 to an external electric circuit, and are made of a refractory metal such as tungsten, molybdenum, or manganese, and a refractory metal powder such as tungsten. An organic solvent and a metal paste obtained by adding and mixing a solvent are applied to a ceramic green sheet to be the insulating substrate 1 in advance in a predetermined pattern by a screen printing method which is well known in the prior art. To the lower surface.
【0015】また前記接続パッド6は、配線基板4を外
部電気回路基板に実装する外部端子として作用し、低融
点ロウ材7を介して外部電気回路基板8の回路配線8a
に接合され、これにより半導体素子3の電極が外部電気
回路基板8の回路配線8aと電気的に接続される。Further, the connection pads 6 act as external terminals for mounting the wiring board 4 on the external electric circuit board, and the circuit wiring 8a of the external electric circuit board 8 through the low melting point brazing material 7.
, So that the electrode of the semiconductor element 3 is electrically connected to the circuit wiring 8a of the external electric circuit board 8.
【0016】更に前記絶縁基体1は、図2、図3に示す
ように、下面の各コーナー部に平面四角形状をなす補助
パッド9が形成されており、かつ該補助パッド9の絶縁
基体1の対角線上に位置する外縁部には円弧状の切り欠
き9aが形成されている。Further, as shown in FIGS. 2 and 3, the insulating base 1 is provided with auxiliary pads 9 each having a rectangular shape in a plan view at each corner of the lower surface thereof, and the insulating base 1 of the auxiliary pads 9 is formed. An arcuate cutout 9a is formed in the outer edge portion located on the diagonal line.
【0017】前記補助パッド9は、外部電気回路基板8
に設けたダミーのパッド等に低融点ロウ材7を介して接
合され、絶縁基体1と外部電気回路基板8との間に生じ
る熱応力が接続パッド6と低融点ロウ材7との界面に作
用するのを防止し、これによって接続パッド6と外部電
気回路基板8の回路配線8aとの低融点ロウ材7を介し
ての接合が強固となる。The auxiliary pad 9 serves as an external electric circuit board 8.
Is bonded to a dummy pad or the like provided on the substrate via the low melting point brazing filler metal 7, and thermal stress generated between the insulating substrate 1 and the external electric circuit board 8 acts on the interface between the connection pad 6 and the low melting point brazing filler metal 7. This prevents the connection pad 6 and the circuit wiring 8a of the external electric circuit board 8 from being bonded to each other via the low melting point brazing material 7.
【0018】前記補助パッド9は例えばタングステン、
モリブデン、マンガン等の高融点金属からなり、上述の
配線導体2や接続パッド6と同様の方法、具体的にはタ
ングステン等の高融点金属粉末に有機溶剤、溶媒を添加
混合して得た金属ペーストを絶縁基体1となるセラミッ
クグリーンシートに予め従来周知のスクリーン印刷法に
より所定パターンに印刷塗布しておくことによって、絶
縁基体1の各コーナー部に被着形成される。The auxiliary pad 9 is, for example, tungsten,
A metal paste made of a high melting point metal such as molybdenum or manganese, obtained by the same method as that of the wiring conductor 2 or the connection pad 6 described above, specifically, a high melting point metal powder such as tungsten by adding and mixing an organic solvent or a solvent. Is preliminarily printed and applied in a predetermined pattern on the ceramic green sheet to be the insulating substrate 1 by a conventionally known screen printing method, whereby the insulating substrate 1 is adhered to each corner portion.
【0019】また前記補助パッド9は絶縁基体1の対角
線上に位置する外縁部に円弧状の切り欠き9aが形成さ
れており、該切り欠き9aは補助パッド9と低融点ロウ
材7との界面で絶縁基体1の対角線方向に作用する絶縁
基体1と外部電気回路基板8との熱膨張係数差に起因す
る熱応力を分散させ、一点に集中するのを有効に防止す
る作用をなし、これによって補助パッド9と低融点ロウ
材7との界面付近、特に絶縁基体1の対角線方向の補助
パッド9と低融点ロウ材7との界面付近に破断が生じる
ことはなく、接続パッド6と低融点ロウ材7との接合を
長期間に亘り維持することが可能となり、半導体素子3
と外部電気回路との電気的接続の信頼性を極めて優れた
ものとなすことがでる。The auxiliary pad 9 has an arcuate notch 9a formed on the outer edge of the insulating base 1 located on a diagonal line. The notch 9a is an interface between the auxiliary pad 9 and the low melting point brazing material 7. The thermal stress resulting from the difference in thermal expansion coefficient between the insulating base 1 and the external electric circuit board 8 acting in the diagonal direction of the insulating base 1 is dispersed and effectively prevents the thermal stress from being concentrated at one point. No breakage occurs near the interface between the auxiliary pad 9 and the low melting point brazing material 7, and particularly near the interface between the auxiliary pad 9 and the low melting point brazing material 7 in the diagonal direction of the insulating substrate 1, and the connection pad 6 and the low melting point brazing material 7 are not broken. The bonding with the material 7 can be maintained for a long period of time, and the semiconductor element 3
It is possible to make the reliability of the electrical connection between the electric circuit and the external electric circuit extremely excellent.
【0020】なお、前記補助パッド9に形成する円弧状
の切り欠き9aは、その半径が100μm未満では熱応
力を効果的に分散させることが困難となり、400μm
を超えると補助パッド9の外縁部で低融点ロウ材7との
接合面積が小さくなるため、補助パッド9と低融点ロウ
材7との接合強度が低下する傾向がある。従って、前記
補助パッド9に形成する円弧状の切り欠き9aは、その
半径を100μm乃至400μmとしておくことが好ま
しい。If the radius of the arcuate notch 9a formed in the auxiliary pad 9 is less than 100 μm, it becomes difficult to effectively disperse the thermal stress, and 400 μm.
If it exceeds, the bonding area between the auxiliary pad 9 and the low melting point brazing material 7 becomes small, so that the bonding strength between the auxiliary pad 9 and the low melting point brazing material 7 tends to decrease. Therefore, it is preferable that the arc-shaped notch 9a formed in the auxiliary pad 9 has a radius of 100 μm to 400 μm.
【0021】また前記補助パッド9は、図4に示すよう
に、円弧状の切り欠き9aの両端部を、さらに丸めた形
状に成形しておくと、この円弧状の切り欠き9aの両端
部で、補助パッド9と低融点ロウ材7とに熱応力が集中
して作用することを防止し、補助パッド9と低融点ロウ
材7とを一層強固に接合して配線基板4の外部電気回路
基板8に対する接続の信頼性をより一層優れたものとす
ることができる。従って、前記補助パッド9は、円弧状
の切り欠き9aの両端部を、さらに丸めた形状に成形し
ておくことが好ましい。As shown in FIG. 4, in the auxiliary pad 9, if both ends of the arcuate notch 9a are further rounded, the both ends of the arcuate notch 9a are formed. , The auxiliary pad 9 and the low melting point brazing material 7 are prevented from being concentrated and acting on the auxiliary pad 9, and the auxiliary melting point brazing material 7 and the low melting point brazing material 7 are more firmly joined to each other to form an external electric circuit board of the wiring board 4. It is possible to further improve the reliability of the connection to the device 8. Therefore, it is preferable that both ends of the arc-shaped notch 9a of the auxiliary pad 9 be formed in a shape that is further rounded.
【0022】かくして本発明の配線基板によれば、絶縁
基体1の凹部1a底面に半導体素子3をガラスや樹脂、
ロウ材等の接着材を介して接着固定するとともにこの半
導体素子3の各電極を配線導体2にボンディングワイヤ
5を介して電気的に接続し、しかる後、絶縁基体1の上
面に金属やセラミックスから成る蓋体10をガラスや樹
脂、ロウ材等の封止材を介して接合させ、絶縁基体1と
蓋体10とから成る容器内部に半導体素子3を気密に封
止することによって製品としての半導体装置が完成す
る。Thus, according to the wiring board of the present invention, the semiconductor element 3 is provided on the bottom surface of the concave portion 1a of the insulating substrate 1 with glass or resin,
The electrodes of the semiconductor element 3 are electrically connected to the wiring conductors 2 via the bonding wires 5 while being fixedly adhered via an adhesive such as a brazing material, and then the upper surface of the insulating substrate 1 is made of metal or ceramics. The lid 10 made of glass is bonded through a sealing material such as a resin or a brazing material, and the semiconductor element 3 is hermetically sealed inside the container made of the insulating base 1 and the lid 10. The device is completed.
【0023】なお、本発明の配線基板は上述の実施の形
態に限定されるものではなく、本発明の要旨を逸脱しな
い範囲であれば種々の変更は可能であり、例えば、前記
配線導体2、接続パッド6および補助パッド9の露出す
る領域にニッケルまたは銅を1μm〜10μm、金を
0.05μm〜5μmの厚さで順次、被着させておく
と、配線導体2、接続パッド6および補助パッド9の酸
化腐蝕を効果的に防ぐことができるとともに、接続パッ
ド6および補助パッド9に対し低融点ロウ材7を、配線
導体2に対しボンディングワイヤ5を強固に接合、接続
させることができる。The wiring board of the present invention is not limited to the above-mentioned embodiment, and various modifications can be made without departing from the gist of the present invention. For example, the wiring conductor 2, If nickel or copper is sequentially deposited on the exposed regions of the connection pad 6 and the auxiliary pad 9 in a thickness of 1 μm to 10 μm and gold is 0.05 μm to 5 μm, the wiring conductor 2, the connection pad 6, and the auxiliary pad are formed. The oxidative corrosion of 9 can be effectively prevented, and the low melting point brazing material 7 can be firmly joined to the connection pad 6 and the auxiliary pad 9 and the bonding wire 5 can be firmly connected to the wiring conductor 2.
【0024】[0024]
【発明の効果】本発明の配線基板によれば、絶縁基体下
面のコーナー部に補助パッドを形成するとともに、該補
助パッドのうち前記絶縁基体下面の対角線上に位置する
外縁部に円弧状の切り欠きを設けたことから、補助パッ
ドを外部電気回路基板に設けたダミーのパッド等に低融
点ロウ材を介し接合することによって接続パッドと低融
点ロウ材との間に作用する熱応力を除去することがで
き、同時に補助パッドと低融点ロウ材の界面で絶縁基体
の対角線方向に作用する配線基板の絶縁基体と外部電気
回路基板との熱膨張係数差に起因する熱応力は補助パッ
ドの円弧状の切り欠き部で分散されて補助パッドと低融
点ロウ材との界面付近、特に絶縁基体の対角線方向の補
助パッドと低融点ロウ材との界面付近の低融点ロウ材に
破断が生じることはなく、これによって接続パッドと低
融点ロウ材との接合が長期間に亘り維持することがで
き、半導体素子と外部電気回路との電気的接続の信頼性
を極めて優れたものとなすことがでる。According to the wiring board of the present invention, the auxiliary pads are formed on the corners of the lower surface of the insulating base, and the outer edges of the auxiliary pads located on the diagonal of the lower surface of the insulating base are arcuately cut. Since the notch is provided, the auxiliary pad is joined to the dummy pad or the like provided on the external electric circuit board through the low melting point brazing material to remove the thermal stress acting between the connection pad and the low melting point brazing material. At the same time, at the interface between the auxiliary pad and the low melting point brazing material, the thermal stress caused by the difference in thermal expansion coefficient between the insulating base of the wiring board and the external electric circuit board acting in the diagonal direction of the insulating base is the arc shape of the auxiliary pad. No fracture occurs in the low melting point brazing material dispersed near the interface between the auxiliary pad and the low melting point brazing material, especially near the interface between the auxiliary pad and the low melting point brazing material in the diagonal direction of the insulating substrate. Ku, whereby it is possible to maintain the bonding between the connection pad and the low melting brazing material over a long period of time, it is out forming a very good thing the reliability of the electrical connection between the semiconductor element and the external electric circuit.
【図1】本発明の配線基板の一実施例を示す断面図であ
る。FIG. 1 is a sectional view showing an embodiment of a wiring board of the present invention.
【図2】図1に示す配線基板の下面図である。FIG. 2 is a bottom view of the wiring board shown in FIG.
【図3】図1および図2に示す配線基板の要部拡大平面
図である。3 is an enlarged plan view of an essential part of the wiring board shown in FIGS. 1 and 2. FIG.
【図4】本発明の配線基板の他の実施例の要部拡大平面
図である。FIG. 4 is an enlarged plan view of an essential part of another embodiment of the wiring board according to the present invention.
1・・・・絶縁基体 1a・・・凹部 2・・・・配線導体 3・・・・半導体素子 4・・・・配線基板 5・・・・ボンディングワイヤ 6・・・・接続パッド 7・・・・低融点ロウ材 8・・・・外部電気回路基板 8a・・・回路配線 9・・・・補助パッド 9a・・・切り欠き 10・・・蓋体 1 ... Insulating substrate 1a ... recess 2 ... Wiring conductor 3 ... Semiconductor element 4 ... Wiring board 5 ... Bonding wire 6 ... Connection pad 7 ... Low melting point brazing material 8 ... External electric circuit board 8a ... Circuit wiring 9 ... Auxiliary pad 9a ... notch 10 ... Lid
Claims (2)
搭載部を有する四角形状の絶縁基体と、該絶縁基体の下
面に形成された多数の接続パッドと、前記絶縁基体の前
記搭載部から前記接続パッドにかけて導出される複数個
の配線導体とから成る配線基板であって、 前記絶縁基体下面のコーナー部に補助パッドを形成する
とともに該補助パッドのうち前記絶縁基体の対角線上に
位置する外縁部に、円弧状の切り欠き部を設けたことを
特徴とする配線基板。1. A rectangular insulating base made of an electrically insulating material and having a semiconductor element mounting portion on its surface, a large number of connection pads formed on the lower surface of the insulating base, and the mounting portion of the insulating base to the insulating pad. A wiring board comprising a plurality of wiring conductors led out to a connection pad, wherein an auxiliary pad is formed at a corner portion of the lower surface of the insulating base, and an outer edge portion of the auxiliary pad located on a diagonal line of the insulating base. A wiring board, characterized in that an arcuate notch is provided in the.
00μmの円弧状をなしていることを特徴とする請求項
1に記載の配線基板。2. The notch has a radius of 100 μm to 4
The wiring board according to claim 1, wherein the wiring board has an arc shape of 00 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001376303A JP2003179175A (en) | 2001-12-10 | 2001-12-10 | Wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001376303A JP2003179175A (en) | 2001-12-10 | 2001-12-10 | Wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003179175A true JP2003179175A (en) | 2003-06-27 |
Family
ID=19184526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001376303A Pending JP2003179175A (en) | 2001-12-10 | 2001-12-10 | Wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003179175A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009044737A1 (en) * | 2007-10-01 | 2009-04-09 | Murata Manufacturing Co., Ltd. | Electronic component |
| CN100551203C (en) * | 2006-09-13 | 2009-10-14 | 日月光半导体制造股份有限公司 | Base plate strip and miniature camera module using same |
| US7615874B2 (en) | 2005-04-18 | 2009-11-10 | Murata Manufacturing Co., Ltd. | Electronic component module |
| KR20160049720A (en) * | 2014-10-28 | 2016-05-10 | 삼성전기주식회사 | Both-sides mounting module, PCB mounted Both-sides mounting module and method for manufacturing Both-sides mounting module |
| CN107731773A (en) * | 2016-08-10 | 2018-02-23 | 艾马克科技公司 | Substrate for semiconductor device |
-
2001
- 2001-12-10 JP JP2001376303A patent/JP2003179175A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7615874B2 (en) | 2005-04-18 | 2009-11-10 | Murata Manufacturing Co., Ltd. | Electronic component module |
| CN100551203C (en) * | 2006-09-13 | 2009-10-14 | 日月光半导体制造股份有限公司 | Base plate strip and miniature camera module using same |
| WO2009044737A1 (en) * | 2007-10-01 | 2009-04-09 | Murata Manufacturing Co., Ltd. | Electronic component |
| KR20160049720A (en) * | 2014-10-28 | 2016-05-10 | 삼성전기주식회사 | Both-sides mounting module, PCB mounted Both-sides mounting module and method for manufacturing Both-sides mounting module |
| KR101983176B1 (en) * | 2014-10-28 | 2019-05-28 | 삼성전기주식회사 | Both-sides mounting module, PCB mounted Both-sides mounting module and method for manufacturing Both-sides mounting module |
| CN107731773A (en) * | 2016-08-10 | 2018-02-23 | 艾马克科技公司 | Substrate for semiconductor device |
| CN107731773B (en) * | 2016-08-10 | 2023-10-20 | 艾马克科技公司 | Substrate for semiconductor device |
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