JP2003168715A - Method of taking out substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of taking out substrate by which the abnormally placed state and strain of a carrier and the abnormally driven state of a detecting device can be detected and a substrate can be held normally by means of a take-out and housing arm. <P>SOLUTION: This method of taking out substrate includes a standard mapping step of detecting the position of each standard substrate housed in each standard slot made in a standard carrier by deciding or detecting the thickness and pitch of the standard substrate, and a substrate-to-be-treated mapping step of detecting the thickness, pitch, and position of a substrate to be treated housed in each slot made in a carrier. This method also includes a comparing and discriminating step of comparing the thickness and pitch of each standard substrate decided or detected in the standard mapping step with the thickness, pitch, and position of the substrate to be treated detected in the substrate-to-be- treated mapping step, and discriminating the taking-out of a substrate to be treated in accordance with the results of the comparison. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for taking out a substrate such as a semiconductor wafer or glass for LCD substrate from a carrier.

[0002]

2. Description of the Related Art For example, in a semiconductor device manufacturing process, a processing system including a single-wafer processing apparatus for supplying a processing liquid to a semiconductor wafer (hereinafter referred to as "wafer") and performing a predetermined processing is used. ing. When loading a wafer into such a single wafer processing apparatus, a plurality of wafers, for example, 2
A wafer carrier case (hereinafter referred to as a “carrier”) containing five wafers is placed on a mounting table provided in the loading / unloading part of the processing system, and a loading / unloading arm of a wafer transfer device equipped in the loading / unloading part. Thus, the wafers are taken out one by one from the carrier and delivered to the transfer mechanism that carries the wafers in and out of the single wafer processing apparatus. The carrier that accommodates the wafer on the mounting table is provided with an opening for loading and unloading the wafer through one side surface of the carrier. In addition, 25 for holding the wafer at a predetermined interval
Slots are provided on the inner wall. One wafer is accommodated in each slot, with the surface on which semiconductor devices are formed as the upper surface, whereby gaps set at a constant pitch are formed between the wafers. The wafer transfer device can access the take-out and storage arm to a clearance of an arbitrary height provided in the carrier placed on the placing table. The slots on the inner wall of the carrier allow the peripheral edge of the wafer to be inserted with a margin (play) so that the wafer can be easily taken out and stored. A space into which the tip member of the take-out storage arm is inserted is provided at the back of the carrier. This tip member is formed at such a height that the take-out storage arm can be inserted into the gap between the wafers.
Therefore, when the take-out storage arm is horizontally inserted from the opening into the gap between the wafers, slightly lifted upward at the carrier back side and retracted toward the carrier opening side, the tip member abuts on the peripheral edge of the wafer at the carrier back side. Then, the wafer can be pulled out. In this way, the wafer is taken out from the carrier by horizontally retracting the take-out storage arm together with the wafer.

By the way, in this type of carrier in which the gap (pitch) between wafers is very narrow,
It is necessary to correctly insert the take-out storage arm into the gap. Also, it is necessary to insert the take-out storage arm after confirming that the wafer is stored in the slot. Further, when a cross slot is formed, for example, when the wafer is held diagonally across two slots, if the take-out storage arm enters the cross slot, the wafer comes into contact with and damages the cross slot. Need to detect. Therefore, before inserting the take-out storage arm, the thickness of the wafer and the pitch between the wafers are measured to detect the lower entrance / exit position, and it is also confirmed that the pitch and the thickness are alternately detected at regular intervals. ing. As an apparatus for detecting the pitch and the thickness, for example, an optical sensor in which a pair of a light emitting portion and a light receiving portion are opposed to each other is used. That is, a part of the wafer is placed horizontally between the light emitting part and the light receiving part,
The pitch between the wafers and the thickness of the wafer can be optically measured by moving the light emitting portion and the light receiving portion in the vertical direction while irradiating the light beam. As a result of the measurement,
If the pitch and thickness are within the permissible values, it is determined that there is no abnormality, and the lower loading / unloading position of the unloading and storing arm is determined as the distance from the lower surface of the wafer to be taken out, and the unloading and storing arm is inserted.

[0004]

However, in the conventional substrate taking-out method, there is a problem that when the carrier is tilted and mounted on the mounting table, this cannot be detected as an abnormality. For example, there is a foreign substance on the mounting table, and the carrier may be mounted on it in a tilted manner. As a result, even if all the wafers in the carrier are held tilted from the horizontal, the pitch and the thickness are alternately detected at regular intervals, so it is determined that the wafers are normally accommodated. . As a result, there is a problem that the taking-out and storing arm enters the wafer held obliquely, the wafer cannot be held normally by the taking-out and storing arm, and the wafer cannot be taken out normally. Further, since the carrier that accommodates the wafer is distorted during long-term use, almost all the wafers in the carrier are held tilted from the horizontal, but such carrier deformation can be detected. could not. Furthermore, if there is an abnormality in the driving means of the device that detects the pitch and the thickness, for example, if the motor that moves the optical sensor in the vertical direction is defective, it can be detected even if the wafer is normally stored. Since the pitch and the thickness are not constant intervals, there is a problem that it is determined not as an abnormality in the driving means but as an abnormality in the wafer accommodation state.

Therefore, it is an object of the present invention to detect an abnormal mounting state of a carrier, distortion of the carrier, and abnormal driving of the detection device, and the substrate can be normally held by the pick-up and storage arm. It is to provide a method for taking out a substrate.

[0006]

In order to solve the above-mentioned problems, according to the present invention, a plurality of substrates are held in multiple stages by a carrier having a plurality of slots for holding the substrates horizontally, A reference mapping step of determining or detecting the thickness and pitch of each reference substrate housed in each reference slot provided in the reference carrier and detecting the position, and in each slot provided in the carrier. Substrate mapping step of detecting the thickness, pitch and position of each substrate to be processed stored in the substrate, thickness determined or detected in the reference mapping step, pitch and detected position and thickness detected in the substrate mapping step , A pitch and position are compared, and a comparison / judgment step is performed to judge whether or not the substrate to be processed is taken out according to the result of the comparison. Extraction method of a substrate, characterized in that there is provided. In this board take-out method,
Even if the pitch and the thickness are alternately detected at regular intervals in the processed substrate mapping process, all the substrates in the carrier are held in an inclined state by comparing with the reference mapping data in the comparison determination process. Can be detected. In such a case, since the removal of the substrate is stopped, it is possible to prevent the substrate from being abnormally held by the extraction and storage arm.

In the comparison / determination step, an error between the thickness, pitch and position detected in the reference mapping step and the thickness, pitch and position detected in the substrate mapping step is detected, and the error is within an allowable error range. If it is within the range, it is preferable to execute the extraction. In this case, the substrate can be taken out normally.

When the position detected in the substrate mapping step is out of the allowable error range and is higher than the position detected in the reference mapping step, the taking out is stopped and the carrier is tilted and placed. It is preferable to detect the state of being activated. In this case, since it is possible to detect the state in which the carrier is tilted and placed, it is possible to prevent abnormal holding of the substrate by the take-out and storage arm by setting the normal state.

When the position detected in the substrate mapping step is outside the allowable error range and is narrower than the position detected in the reference mapping step, the taking out is stopped and the carrier containing the substrate to be processed is stopped. It is preferable to replace it. Further, when the pitch and the position detected in the processing substrate mapping step are out of the respective tolerances and are lower than the position detected in the reference mapping step, the taking out is stopped,
The carrier accommodating the substrate to be processed may be replaced. In this case, the replacement time of the deformed carrier can be detected.

When the number of substrates to be processed detected in the substrate to be processed mapping step is larger than the number of reference substrates detected in the reference mapping step, the taking out is stopped and the defect of the substrate detecting means is detected. Is preferred.

Further, when the error is out of the allowable error range, the substrate mapping step may be performed again. In this case, the reliability of the data can be improved by reconfirming the data of the processed substrate mapping.

It is preferable that the tolerance of the position is set to the narrowest for the lowermost substrate. Further, the permissible error of the position may be set wider sequentially from the lowermost substrate to the uppermost substrate.

In the method of taking out the substrate of the present invention,
It is preferable to detect the thickness, pitch, and position by moving an optical sensor along the direction in which the plurality of substrates are arranged.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a preferred embodiment of the present invention will be described on the basis of a loading / unloading unit configured to mount a carrier containing a wafer thereon and take the wafer out of the carrier as an example of a substrate. . FIG. 1 is a plan view of a cleaning processing system 1 incorporating a loading / unloading unit for carrying out a method of picking up a substrate according to the present invention. FIG. 2 is a side view thereof. The cleaning processing system 1 includes a cleaning processing unit 2 that performs cleaning processing on the wafer W and thermal processing after the cleaning processing, and a loading / unloading unit 3 that loads / unloads the wafer W to / from the cleaning processing unit 2. .

The loading / unloading section 3 includes an in / out port 4 for loading / unloading a carrier C containing a plurality of, for example, 25 wafers W1 to W25, and a carrier C placed on the in / out port 4. Wafer W with cleaning processing unit 2
It is composed of a wafer transfer unit 5 for delivering and receiving.

The in / out port 4 is provided with a mounting table 10 on which the carrier C is mounted. Table 1
On the upper surface 11 of 0, for example, three carriers C can be placed side by side in the Y direction of the horizontal plane at predetermined positions. The carrier C has a wafer unloading / accommodating port 15 provided with a lid and is provided with an in / out port 4 and a wafer transfer unit 5.
It is placed toward the boundary wall 17 side with.

FIG. 3 is a perspective view of a carrier C for accommodating wafers W1 to W25 having a predetermined thickness (actual thickness RB). Each of the wafers W1 to W25 is a carrier C
The wafer is taken out and stored through the wafer take-out and storage port 15 formed on the front surface of the. The wafer unloading / accommodating port 15 is provided with an openable / closable lid. Wafers W1 to W
The carriers 25 are housed one by one in slots S1 to S25 provided at regular intervals on the inner walls of both sides of the carrier C. Each of the slots S1 to S25 has a substantially V-shaped cross-sectional shape as shown in FIG.
The peripheral portions of 1 to W25 are accommodated with a margin (play).
When the carrier C is mounted on the mounting table 10, as shown in FIG. 9, each of the slots S1 to S25 holds the wafers W1 to W25 at regular intervals in the vertical direction. At this time, the wafers W1 to W25 are held in a state where the surface (the surface on which the semiconductor device is formed) is the upper surface (the surface that is the upper side when the wafer W is held horizontally).
Further, each of the slots S1 to S25 is in a state of holding the peripheral edge portion of the wafer W1 to W25 by the inclined surface which is a substantially V-shaped lower portion, and has a predetermined thickness (actual thickness R
The wafers W1 to W25 having B) can be held substantially horizontally at a predetermined interval (actual pitch RP). Here, the actual thicknesses RB1 to RB25 are the actual thicknesses of the wafers W1 to W25, and the actual pitches RP2 to RP25 are the lower surfaces of the wafers W2 to W25 and the wafers W1 to W24 held below them. The distance from the top surface. Since there is no wafer below the wafer W1 held at the bottom, the actual pitch RP1 does not exist.

On the boundary wall 17, a window portion 20 is formed at a position corresponding to the place where the carrier C is placed, and the window portion 20 is opened and closed by a shutter or the like on the wafer transfer portion 5 side of the window portion 20. A window opening / closing mechanism 21 is provided. The window opening / closing mechanism 21 can also open / close the lid provided on the carrier C, and simultaneously opens / closes the window 20 to open / close the lid of the carrier C. When the window 20 is opened to connect the wafer take-out / accommodating port 15 of the carrier C and the wafer transfer unit 5 to each other, the wafer transfer device 25 arranged in the wafer transfer unit 5 can access the carrier C. The W can be taken out and stored. The window opening / closing mechanism 21 is preferably provided with an interlock so that the window C opening / closing mechanism 21 does not operate when the carrier C is not mounted at a predetermined position on the mounting table 10.

FIG. 4 is a plan view of the wafer transfer device 25, and FIG. 5 is a front view thereof. The base 30 of the wafer transfer device 25 arranged in the wafer transfer unit 5 is fixed to the upper end of a rod 32 that moves up and down by the rotational drive of a servo mechanism (not shown). Therefore, the base 30 can be moved in the Z direction by moving the rod 32 up and down. The wafer transfer device 25 is movable in the Y direction, and X
-It is configured to be rotatable in the Y plane (θ direction). Further, the wafer transfer device 25 has a take-out storing arm 35, which will be described later, for taking out the wafer W from the carrier C, and the take-out storing arm 35 is slidable in the X direction. Thus, the wafer transfer device 25 can access all the carriers C mounted on the mounting table 10, and
Access to slots S1 to S25 of arbitrary height provided on the carrier C, and access to the upper and lower two wafer transfer units 67 and 68 arranged in the cleaning processing unit 2 for in / out port 4 side to cleaning processing section 2 side, conversely from cleaning processing section 2 side to in / out port 4
The wafer W can be transported to the side.

The base 30 of the wafer transfer device 25 is provided with a take-out and storage arm 35 for taking out the wafer W from the carrier C, a pair of wafer holding members 36a and 36b, and a pair of sensor arms 37a and 37b. Further, as shown in FIG. 6, a guide groove 38b for guiding the sensor arm 37b is provided on a side surface of the base 30, and a guide groove 38b for guiding the sensor arm 37a is provided on a side surface opposite to the base 30. A similar guide groove 38a is provided.

The take-out and storage arm 35 is a plate body having a width and a length capable of mounting the wafer W on the upper surface thereof.
It is configured to be movable in the axial direction). Further, the take-out storage arm 35 is provided with a base 30 that can be moved up and down in the Z direction by rotationally driving a servo motor of a servo mechanism (not shown).
Since it is provided at the position, it can be moved in the Z direction shown in FIG. A tip member 41 having a step portion 40 is provided at the tip of the take-out and storage arm 35, and a step portion 42 is provided at the base end side of the take-out and storage arm 35. As shown in FIG. 9, the tip member 41 and the stepped portion 42 are formed at such a height that the take-out storage arm 35 can be inserted into the gap between the wafers W1 to W25. Extraction storage arm 3
When 5 moves horizontally from the gap between the wafers W to the lower back position on the inner side of the carrier C and slightly moves up at the lower back position, as shown in FIG.
The step portion 40 and the step portion 42 abut on the lower surface of the. That is, step 4
The wafer W can be placed on the unloading / accommodating arm 35 by abutting 0 on the peripheral edge of the lower surface on the wafer unloading / accommodating port 15 side and contacting the step portion 42 on the peripheral edge of the lower surface on the inner side of the carrier C. When the take-out storage arm 35 horizontally retracts from the gap with the wafer W placed thereon, the tip member 41 moves the carrier C.
The wafer W can be taken out while being supported on the pick-up and storage arm 35 because it abuts against the peripheral edge of the inner side surface.

Here, the slots S1 to S2 of the carrier C are
A process of taking out the wafer W (i) stored in the slot S (i) located at the i-th position of the slot S1 from the slot S1 side will be described. First,
The take-out storage arm 35 that has not received the wafer W is moved from above the base 30 to below the wafer W (i), and the take-out storage arm 35 is opposed to the lower surface of the wafer W (i). At this time, when a wafer is accommodated in the slot located below the slot S (i), the wafer W (i) is arranged so that the take-out accommodating arm 35 does not interfere with the wafer located below.
And a wafer located below the wafer. That is, for example, when counting from the slot S1 side, i-
The wafer W (i
-1) is accommodated, the take-out and storage arm 35 is moved from the standby position on the base 30 to the lower loading / unloading position located between the wafer W (i) and the wafer W (i-1). Then, from this lower loading / unloading position, it is horizontally advanced toward the inner side of the carrier C, and the unloading storage arm 35 is horizontally moved (slide) to the lower inner position facing the lower surface of the wafer W (i). Next, the take-out and storage arm 35 is raised to abut against the lower surface of the wafer W (i). And
The supported wafer W (i) is lifted to the upper back position where it does not contact the upper part of the slot S (i). In this way,
The wafer W (i) whose peripheral portion is held by the lower portion of the slot S (i) is brought into a state of being supported by the unloading / accommodating arm 35 between the lower portion and the upper portion of the slot S (i). Subsequently, the take-out storage arm 35 supporting the wafer W (i) is withdrawn from the upper rear position, whereby the wafer W
(I) is pulled out from the slot S (i). At this time, the supported wafer W (i) is prevented from coming into contact with the lower portion and the upper portion of the slot S (i). That is, for example, the wafer W (i)
The take-out storage arm 35 supporting the wafer is horizontally moved (slide) from the upper back position, and the wafer W (i) is moved to the slot S.
Horizontally move from (i) to the upper entry / exit position where it is completely unloaded. In this way, the wafer W (i) can be taken out of the carrier C by the take-out storage arm 35 and moved onto the base 30.

Next, the process of housing the wafer W (i) in the slot S (i) of the carrier C will be described. The take-out storage arm 35 supporting the wafer W is moved from the standby position on the base 30 to the slot S at the peripheral edge of the wafer W (i).
It is moved to the upper entrance / exit position where it can be inserted into (i), and is horizontally moved (slide) from the upper entrance / exit position. As a result, the supported wafer W (i) is inserted between the lower part and the upper part of the slot S (i) without contacting the lower part and the upper part of the slot S (i). Then, the take-out storage arm 35 is inserted to the upper back position and lowered from the upper back position. At this time, the wafer W is held by the lower portion of the slot S, the lower surface of the wafer W is separated from the take-out storage arm 35, and the slot S (i)
The wafer W (i) is inserted into. After that, the take-out storage arm 35 is moved from below the wafer W (i) to the outside of the carrier C. At this time, when the wafer is accommodated in the slot located under the slot S (i), the wafer W (i) and the wafer W (i) are located below the wafer W (i) so as not to interfere with the wafer located below. The wafer to be moved. That is, for example, when the wafer W (i-1) is accommodated in the slot S (i-1) located at the (i-1) th position from the side of the slot S1, the unloading / accommodating arm 35 is moved from the lower back position to the lower unloading position. It is moved horizontally to (slide) to return to the standby position on the base 30. In this way, the wafer W (i) can be stored in the slot S (i) of the carrier C.

The wafer holding members 36a and 36b are supported substantially horizontally by mounting fittings 45a and 45b on both sides of the base end of the take-out and storage arm 35. Further, the wafer holding members 36a and 36b are respectively provided with arcuate inner side surfaces 46a and 46a toward the tip end side of the unloading and storing arm 35, respectively.
46b is formed. The take-out storage arm 35 advances to the lower entry / exit position in the carrier C shown in FIG.
When the wafer W therein is placed and retracted to the standby position on the base 30 shown in FIG. 6A, the tip end member 41 and the wafer holding members 36a, 36b provided at the tip end of the unloading and storing arm 35 are placed.
The wafer W is held by being sandwiched between the wafer W and the arc-shaped inner surface 46.

At the tips of the sensor arms 37a and 37b,
A light emitting element (for example, a light emitting diode such as an LED or a laser diode) 50 and a light receiving element (for example, a phototransistor or a photodiode) 51 so as to face each other.
Is attached. Light emitting element 50 and light receiving element 51
Operates by a light emitting / light receiving element drive circuit (not shown). When there is no object between the light emitting element 50 and the light receiving element 51, the light LA emitted from the light emitting element 50 enters the light receiving element 51, and the light receiving element 51 outputs an output signal of, for example, “H” level. However, when an object is present between the light emitting element 50 and the light receiving element 51, the light emitted from the light emitting element 50 is blocked by the object and therefore does not enter the light receiving element 51 and is output from the light receiving element 51. The output signal that becomes "L" level, for example. The output signal obtained from the light receiving element 51 is transmitted to the controller 55 as a sensor detection signal.

Since the sensor arms 37a and 37b are provided on the base 30 which can be moved up and down in the Z direction by the rotational driving of the servo mechanism (not shown), they can move in the Z direction. Further, the sensor arms 37a, 37b
Is configured to be movable in the front-rear direction (X-axis direction in FIG. 1) with respect to the base 30 by a drive mechanism (not shown) independently of the extraction and storage arm 35. Both sensor arms 37
The distance between a and 37b is such that both arms can enter inside both side walls of the carrier C as shown in FIG.
A part of is selected to be able to enter horizontally between both arms. Therefore, the sensor arms 37a, 37b
Are the actual thicknesses RB1 to RB25 and the actual pitches RP2 to RP25 of the wafers W1 to W25 housed in the carrier C.
Information can be detected.

The servo mechanism has a servo motor that rotates based on a pulse signal transmitted from, for example, a rotary encoder, and includes a rod 32 and a wafer transfer device 25.
Moves up and down in the Z direction with a predetermined movement amount according to the rotation amount of the servo motor at a predetermined angle. That is, one pulse of the pulse signal corresponds to the rotation amount of the servo motor at a predetermined angle, and thus corresponds to the predetermined movement amount of the rod 32. The control unit 55
By measuring the number of pulses of this pulse signal, the moving position of the wafer transfer device 25 can be detected. The pulse signal transmitted from the rotary encoder is also used as a feedback signal for the servo mechanism.

In the wafer transfer device 25, the substrate detecting means according to the present embodiment includes a base 30 and a rod 3.
2, sensor arms 37a and 37b, sensor arm 37
a and 37b, a driving mechanism (not shown), a light emitting element 50, a light receiving element 51, and a light emitting / light receiving element driving circuit (not shown).

Wafers W1 to W housed in the carrier C
In the mapping for detecting the processed wafer mapping data D including the information on the thickness, pitch, and center position of 25, the sensor arms 37a and 37b are moved from the bottom to the top. While raising both sensor arms 37a and 37b,
The wafers W1 to W are provided between the light emitting element 50 and the light receiving element 51.
Whenever 25 passes, the light LA from the light emitting element 50 is blocked. Then, the “L” level “wafer presence signal” is output from the light receiving element 51, and this signal is input to the control unit 55. A pulse signal is transmitted by a rotary encoder (not shown) while the two sensor arms 37a and 37b are being raised, and is used as a feedback signal for a servo mechanism that is a Z-direction drive device. The position signal indicating the position is transmitted to the control unit 55. The control unit 55 can detect the moving position of both sensor arms 37a and 37b when receiving the L level signal by the number of pulse signals from the initial position.

14 (a), (b), (c) and FIG.
(A) and (b) represent output signals (processed wafer mapping data D) obtained from the light receiving element 51 when the sensor arms 37a and 37b are moved from bottom to top. In these figures, the vertical axis represents the level of the signal obtained from the light receiving element 51, and the horizontal axis represents the moving position of both sensor arms 37a and 37b detected from the initial position by the number of pulse signals by the rotary encoder.

As shown in FIG. 9, the wafers W1 to W25 are normally accommodated in the carrier C, that is, each of the wafers W1 to W25 has an actual thickness (actual thickness) RB, and each of the wafers W1 to W25. With the gap between W25 having the actual pitch (actual pitch) RP, the sensor arms 37a, 37b
Output signal (processed wafer mapping data D) obtained from the light receiving element 51 when moving from the bottom to the top
The L level and the H level are alternately and regularly output, as shown in FIG. That is, the length at which the H level is continuously output is detected as the reference pitch MP0, and the length at which the L level is continuously output is detected as the reference thickness MB0. Further, the reference measurement center position MT0 in the height direction (Z direction) of the wafer W is detected from the center position of the length at which the L level is continuously output. Further, the output signal (reference mapping data D0) which is the reference of the output signal has the reference thickness MB0 and the reference pitch MP.
0, the reference measurement center position MT0 is detected.

As shown in FIG. 10, in the wafers W1 to W25 in the carrier C, the sensor arm 37a, while the cross slot wafer WX obliquely held across the two slots is generated. The output signal (processed wafer mapping data D) obtained from the light receiving element 51 when 37b is moved from the bottom to the top is shown in FIG.
As shown in (b), at the place where the cross slot wafer WX is generated, the continuously output L level becomes longer than the normal state and is detected as the measured thickness MBX longer than the reference thickness MB0.

As shown in FIG. 11, the sensor arm 37a, with the slot SN not holding the wafer W existing in the slots S1 to S25 of the carrier C,
The output signal (processed wafer mapping data D) obtained from the light receiving element 51 when 37b is moved from the bottom to the top is as shown in FIG. The H level continuously output becomes longer than the normal state and is detected as the measurement pitch MPN longer than the reference pitch MP0.

As shown in FIG. 12, foreign matter M such as fine particles is present on the upper surface 11 of the mounting table 10, and the carrier C is tilted and placed on the foreign matter M.
When 25 is held tilted from the horizontal, the output signal (processed wafer mapping data D) obtained from the light receiving element 51 when the sensor arms 37a and 37b are moved from bottom to top is as shown in FIG. ), The L level and the H level are alternately and regularly output. However, the measurement center position MTM is detected as a state shifted to a higher position than the reference measurement center position MT0 detected from the L level continuously output in the reference mapping data D0. This reference measurement center position MT0
The difference between the measurement center position MTM and the measurement center position MTM becomes larger as the measurement center position MT becomes higher. Further, the L and H levels that are continuously output are slightly longer than in the normal state, and the measured thicknesses MBM, which are longer than the reference thickness MB0, respectively.
It is detected as a measurement pitch MPM slightly longer than the reference pitch MP0. The control unit 55 stores a reference output signal (reference mapping data D0) in advance, and compares the reference output signal with the transmitted output signal (processed wafer mapping data D) to determine that the carrier C is It is possible to detect the state in which the device is tilted.

As shown in FIG. 13, for example, since the carrier C is deformed due to long-term use and the carrier C is distorted, the wafer WF is tilted from the horizontal and is in a front-driving state, and further, the wafers WF to W25. In the case where the sensor arms 37a and 37b are tilted from the horizontal and held in the front hanging state, the output signal (processed wafer mapping data D) obtained from the light receiving element 51 when the sensor arms 37a and 37b are moved from the bottom to the top is: As shown in FIG. 15B, the L level and the H level are alternately and regularly output at a position where the wafer WF ′ directly below the wafer W1 and the wafer WF move from the wafer WF to the wafer W25. However, it is detected that the measurement center position MTF of the wafer WF is shifted to a low position from the continuously output L-level reference measurement center position MT0 in the reference mapping data D0. In addition, L level and H output continuously
The level has more variation than in the normal state, and the distorted portion is detected as the measurement pitch MPF shorter than the reference pitch MP0. The carrier C may be distorted as a whole, and each of the wafers W1 to W25 may be held in a state where the wafers W1 to W25 are inclined from the horizontal and drooped forward. In this case, the deviation between the reference measurement center position MT0 and the measurement center position MTM is detected so as to increase as the measurement center position MT becomes higher. The control unit 55 stores a reference output signal (reference mapping data D0) in advance, and compares the reference output signal with the transmitted output signal (processed wafer mapping data D) to determine that the carrier C is The deformed state can be detected. That is, the measurement center positions MTF to MT25 of the wafers WF to W25 are equal to the reference measurement center position MT.
When it is detected that the carrier C is displaced to a position lower than 0, it is recognized that the carrier C is deformed. Further, it is detected that the measurement center positions MTF to MT25 of the wafers WF to W25 deviate from the reference measurement center position MT0 to a low position and that a measurement pitch MPF shorter than the reference pitch MP0 exists, and the carrier is detected. It can be recognized that C is deformed.

As described above, the sensor arms 37a and 37b can be moved up and down in the Z direction by rotationally driving the servo motor of the servo mechanism (not shown). If the Z direction drive mechanism is defective, an output signal is output. The (processed wafer mapping data D) may be irregular because the L level and the H level are not alternately and regularly output. For example, when the element that transmits the pulse signal in the servo mechanism is a defective product, the L level in the processed wafer mapping data D may be detected more than in the normal state. Thus, when the measured thickness MB is detected more than in the normal state, it appears as if a large number of wafers are stored. In addition, for example, when vibration occurs during movement in the Z direction, the position of the wafer W may be erroneously recognized. However, even in such a case, by comparing with the reference mapping data D0, the sensor arms 37a, 37
It can be detected that the Z-direction drive mechanism of b is defective.

As shown in FIGS. 1 and 2, the cleaning processing section 2 includes a main wafer transfer device 65, two wafer transfer units 67 and 68, and four substrate cleaning units 70 and 7.
1, 72, 73, and three heating units for heating and drying the wafer W and a heating / cooling unit 75 including a cooling unit for cooling the heated wafer W. The main wafer transfer device 65 includes wafer transfer units 67, 6
8, substrate cleaning units 70, 71, 72, 73, heating
All of the heating unit and cooling unit of the cooling unit 75 are arranged so as to be accessible. The wafer transfer units 67 and 68 temporarily mount the wafer W in order to transfer the wafer W to and from the wafer transfer section 5.

The main wafer transfer device 65 includes a cylindrical support 76 rotatable by a rotational driving force of a motor (not shown),
The wafer carrier 77 is provided so as to be vertically movable in the Z direction along the inside of the cylindrical support 30. The wafer transfer body 77 is integrally rotated with the rotation of the cylindrical support body 76, and three transfer arms 78 arranged in multiple stages capable of moving back and forth independently of each other.
a, 78b, 78c.

The wafer transfer units 67 and 68 are arranged in a stacked manner in two stages, for example, the lower wafer transfer unit 67 has the in-out port 4
Used to place the wafer W to be transferred from the cleaning processing unit 3 side to the cleaning processing unit 3 side, and the upper wafer transfer unit 68 is used to mount the wafer W to be transferred from the cleaning processing unit 3 side to the in / out port 4 side. Can be used for.

The cleaning processing unit 2 is an electric equipment unit 80 which is a power source for operating the entire cleaning processing system 1.
And a machine control unit 81 for controlling the operation of various devices arranged in the cleaning processing system 1 and the cleaning processing system 1 and a predetermined cleaning liquid to be sent to the substrate cleaning units 70, 71, 72, 73. Chemical liquid storage unit 82
And are provided. The electrical unit 80 is connected to a main power source (not shown). A fan filter unit (FFU) for downflowing clean air to each unit and the main wafer transfer device 65 is provided on the ceiling of the cleaning processing unit 2.
83 is provided.

Electrical equipment unit 80 and machine control unit 81
The wafer transfer units 67, 6 are installed from this surface (Y direction) by installing the chemical solution storage unit 82 and the chemical solution storage unit 82 outside the cleaning processing unit 2 or by pulling them out.
8. The main wafer transfer device 65 and the heating / cooling unit 75 can be easily maintained.

Substrate cleaning units 70, 71, 72, 73
As shown in FIG. 2, two units are arranged in each of the upper and lower stages. As shown in FIG. 1, the substrate cleaning unit 7
0, 71 and the substrate cleaning units 72, 73 have a symmetrical structure with respect to the wall surface 85 forming the boundary thereof, except that the substrate cleaning units 70,
71, 72, 73 have substantially the same configuration.

Next, the setting process of the loading / unloading section 3 in the cleaning processing system 1 will be described. The setting process includes an adjusting process of various members provided in the loading / unloading unit 3 and a calibration process of the wafer transfer device 25.

In the adjustment process of various members, for example,
Extraction and storage arm parallelism adjusting step for adjusting the parallelism of the extraction and storage arm 35 to a predetermined state, mounting table adjustment step for adjusting the upper surface 11 of the mounting table 10 to be a horizontal plane, and mounting the reference carrier C0 on the surface plate. Then, the reference carrier reliability confirmation process for confirming the reliability of the reference carrier is performed by placing the device on the substrate and measuring the dimensions of each part. Here, the reference carrier C0 is a carrier having a standard shape of the carrier C used in the cleaning processing system 1, and has the same shape as the carrier C shown in FIG. Also, the reference carrier C
A reference wafer W whose reliability as a reference wafer has been confirmed can be housed inside 0 to serve as a reference for adjusting the operation of the wafer transfer device 25. When the specifications of the carrier used in the cleaning processing system 1 are changed, for example, as shown in FIG.
When the pitch of the reference wafer W is changed or the thickness of the reference wafer W is changed by using a carrier having a shape different from that of the carrier C shown in FIG. The calibration process of the wafer transfer device 25 is performed.

After the adjustment process of the various members, in the calibration process of the wafer transfer device 25, the mapping start position setting process and the mapping data for the reference wafers W01 to W025 accommodated in the reference carrier C0 are detected. A reference mapping step is performed.

In the calibration process, first, the starting position of mapping by the sensor arms 37a and 37b is set and stored in a controller (not shown) that controls the wafer transfer device 25. The mapping start position is set to a predetermined position lower by a predetermined distance than the lowest slot S1. When mapping, the sensor arm 3
7a and 37b are moved upward from the mapping start position.

Next, the reference mapping process is performed. In this reference mapping step, a reference mapping data detection step of detecting the reference mapping data D0 and a reference data calculation step of calculating reference data such as the reference thickness MB0, the reference pitch MP0, and the reference measurement center position MT0 from the reference mapping data D0. And the reference data to the control unit 5
A storage step of storing the data in step 5 is performed. The control unit 55
In the table, preset tolerances of the measurement thickness MB, the measurement pitch MP, and the measurement center position MT are stored. The tolerance of the measurement center position MT is the reference measurement center position MT0.
The difference between 1 to MT025 and each measurement center position MT1 to MT25 is set.

First, the reference carrier C whose reliability is confirmed
The reference wafers W01 to W025 are housed in the reference slots S01 to S025 of 0, respectively. Then, the reference carrier C0 is mounted at a predetermined position on the upper surface 11 of the mounting table 10.

In the reference mapping data detection step, both sensor arms 37a, 37 of the wafer transfer device 25 are used.
b, each reference slot S01 of the reference carrier C0
To reference wafers W01 to W025 stored in S025 to S025
The reference mapping data D0 of is detected. First, the wafer transfer device 25 moves to the front of the reference carrier C0 and adjusts the positions of both sensor arms 37a and 37b to the mapping start position. Then, as shown in FIG. 8, the two sensor arms 37a and 37b are moved relative to each other. Each wafer W01-W
Both sensor arms 37a, to the extent that a part of 025 can pass
37b is advanced into carrier C. Next, while the light emitting element 50 emits light, a servo mechanism (not shown) is operated to move both sensor arms 37a and 37b upward to a predetermined height position above the uppermost slot S025. In this way, the reference wafers W01 to W025 accommodated in the carrier C0 are mapped, and the reference mapping data D0 having the information on the thickness and the pitch is detected. The reference mapping data D0 is stored by the control unit 55.

After that, the reference data calculation step of the reference wafers W01 to W025 accommodated in the reference carrier C0 is performed. In this step, the reference data is detected based on the reference mapping data D0. That is, from the position information when the L level in the reference mapping data D0 is detected, each reference thickness MB0 of each reference wafer W01 to W025 is obtained.
1 to MB025 and each reference measurement center position MT in the height direction
01 to MT025 are calculated. Further, based on the position information when the H level in the reference mapping data D0 is detected, each reference pitch M between the reference wafers W01 to W025 is obtained.
Calculate P02 to MP025. Where the reference thickness MB
01 to MB025 are wafers W01 to W02, respectively.
5 is measured, and the reference pitch MP02-
MP025 is a measurement of the distance between the lower surfaces of the wafers W02 to W025 and the upper surfaces of the wafers W01 to W024 held below. Since there is no wafer below the wafer W01 held at the bottom, the reference pitch MP01 does not exist. The reference measurement center positions MT01 to MT025 are the wafer W0.
The center positions of 1 to W025 in the height direction are measured. Further, the calculated reference thicknesses MB01 to MB025 of the reference wafers W01 to W025 and the reference pitch MP0.
2 to MP025 and respective reference measurement center positions MT01 to MT
From 025, various positions regarding the take-out storage arm 35 are calculated for each of the reference wafers W01 to W025. That is, a standby position where the unloading / accommodating arm 35 stands by on the base 30, a lower loading / unloading position that moves horizontally with respect to the lower back position, a lower back position that faces the lower surface of the wafer W on the back side inside the carrier C, The upper back position that rises from the lower back position and supports the wafer W, and the upper entry position that moves horizontally with respect to the upper back position are calculated for each of the reference wafers W01 to W025. Furthermore, each reference measurement center position MT01 to M
From T025 and the preset tolerance of the measurement center position MT, the tolerance of the measurement center position MT with respect to the mapping start position is calculated. All the calculated values in the reference data calculation step are calculated with the mapping start position as a reference.

Next, a storage step of storing the reference data detected by calculating from the reference mapping data D0 in the reference data calculation step in the control unit 55 is performed. That is, reference thicknesses MB01 to MB0 that are reference data
25, reference pitches MP02 to MP025, reference measurement center positions MT01 to MT025, reference wafers W01 to W0
The standby position, the lower entry / exit position, the lower back position, the upper back position, and the upper entry / exit position calculated for 25 are stored in the control unit 55.

The reference thicknesses MB01 to MB025 and the reference pitches MP02 to MP025 are not calculated from the reference mapping data D0, but are calculated based on the thickness and pitch determined by the shape of the carrier C used in the processing system 1. MB01 to MB025, each reference pitch M
It may be detected by determining P02 to MP025. In this case, the reference data calculated from the reference mapping data D0 in the reference data calculation step is the reference measurement center positions MT01 to MT025, and the reference wafers W01 to W0.
25 are the standby position, the lower entrance / exit position, the lower back position, the upper back position, and the upper entrance / exit position calculated for 25. The reference data stored in the storage step is the reference thickness MB01 which is the reference data determined by the shape of the carrier C.
To MB025, reference pitches MP02 to MP025, and reference measurement center positions MT01 to MT which are reference data detected by calculating from reference mapping data D0.
025, a standby position, a lower entrance / exit position, a lower back position, an upper back position, and an upper entrance / exit position.

Reference thicknesses MB01 to MB025, reference pitch MP determined or detected in the reference mapping step
02 to MP025 are compared with measured thicknesses MB1 to MB25 and measured pitches MP2 to MP25 calculated in the process wafer mapping step described later. The tolerance of the measured thickness MB and the measured pitch MP, which is the calculated data from the processed wafer mapping data D for each wafer W1 to W25 in the carrier C, is, for example, 1 mm for the measured thickness MB.
Below, the measurement pitch MP is preset with an allowable value of 5 mm or more and stored in the control unit 55.

On the other hand, the reference measurement center positions MT01 to MT025 detected in the reference mapping process are the measurement center positions M calculated in the processing wafer mapping process.
Compared with T1-MT25. The allowable error of the measurement center position MT, which is the calculated data from the processed wafer mapping data D for each of the wafers W1 to W25 in the carrier C, is
The difference is set between the measurement center position MT and the reference measurement center position MT0 which is calculated from the reference mapping data D0. Further, as described above, the reference measurement center position M
The difference between T0 and the measurement center position MTM is that the measurement center position M
The higher the T is, the larger it becomes.
The allowable error of T is the lowest slot S1 in the carrier C.
The measurement center position MT1 of the wafer W1 held by is set narrowest, and the wafers W2 to W25 held by the slots S2 to S25 are set wider than the measurement center position MT1 set for the wafer W1. For example, the measurement center position M of the lowermost wafer W1
For T1, the difference between the wafer W1 and the reference wafer W01 is ± 0.5 mm or less, and for the measurement center positions MT2 to MT25 of the wafers W2 to W25, the respective wafers W2 to W2.
5 and each of the reference wafers W02 to W025 have a difference of ± 1 mm or less. Further, for example, when the wafer W1 is not held in the lowest slot S1, the allowable error is set from the wafer W2 held by the slot S2. For example, the tolerance is set to be the narrowest for the measurement center position MT2 of the wafer W2, and the measurement center position MT is set for the wafers W3 to W25 held by the slots S3 to S25.
Set wider than 2. Note that the allowable error may be sequentially set wider from the lowermost wafer W1 to the uppermost wafer W25. For example, the measurement center position MT1 of the wafer W1 and the reference measurement center position M of the reference wafer W01
The difference from T01 is ± 0.5 mm or less, and wafers W2 to W
24 measurement center positions MT2 to MT24 and reference wafer W
02-W024 reference measurement center positions MT02-MT0
The tolerance with respect to No. 24 is set to increase sequentially within ± 0.5 to ± 0.94 mm, and the difference between the measurement center position MT25 of the wafer W25 and the reference measurement center position MT025 of the reference wafer W025 is ± 0. It is set so as to be 0.95 mm or less.

Then, the standby position, the lower loading / unloading position, the lower back position, the upper back position, and the upper loading / unloading position detected for each of the reference wafers W01 to W025 in the reference mapping process indicate that the wafer W having been processed is treated by the carrier C. Used when storing in.

Next, a process of cleaning the wafer W by the cleaning system 1 will be described. First, a carrier C containing, for example, 25 wafers each of which has not been processed yet, is transferred by a transfer robot (not shown) to the cleaning processing system 1 that has completed the setting process, and is provided in the in / out port 4. It is mounted on the mounting table 10.

When the carrier C is placed at a predetermined position on the mounting table 10, the wafer take-out / accommodating port 15 of the carrier C faces the window 20 formed in the boundary wall 17. As shown in FIG. 9, the wafers W1 to W25 in the carrier C have a predetermined actual pitch R due to the slots S1 to S25.
It is held substantially horizontally by P. Also, the wafers W1 to W2
No. 5 is held with the surface being the upper surface.

Then, the window opening / closing mechanism 21 opens the lid provided on the carrier C to connect the wafer unloading / accommodating port 15 of the carrier C and the wafer transfer unit 5. First, a process wafer mapping step of detecting process wafer mapping data D for the wafers W1 to W25 in the carrier C is performed. A process wafer mapping data detecting step of detecting the process wafer mapping data D and a process wafer data calculating step of calculating data such as the measurement thickness MB, the measurement pitch MP, and the measurement center position MT from the process wafer mapping data D are performed.

In the process wafer mapping data detecting step, first, the wafer transfer device 25 moves to the front of the carrier C, and the positions of both sensor arms 37a and 37b are adjusted to the mapping start position. Then, as shown in FIG. The sensor arms 37a and 37b are advanced into the carrier C until a part of the wafers W1 to W25 can relatively pass between the sensor arms 37a and 37b. Next, while the light emitting element 50 emits light, a servo mechanism (not shown) is operated to move both sensor arms 37a, 37b upward to a predetermined height position above the uppermost slot S25. In this way, the wafers W1 to W25 housed in the carrier C are mapped, and the processed wafer mapping data D having the information on the thickness and the pitch is detected. The processing wafer mapping data D is stored in the control unit 55.
Sent to.

Next, the process wafer data calculating step is performed. In the controller 55, the wafers W1 to W in the carrier C are
From the processed wafer mapping data D regarding No. 25, the measured thicknesses MB1 to MB25 of the wafers W1 to W25, the measurement pitches MP2 to MP25, and the measurement center position MT in the height direction.
1 to MT25 are calculated. Here, the measured thickness MB1 to M
B25 is the thickness of each of the wafers W1 to W25, and the measurement pitches MP2 to MP25 are between the lower surface of each wafer W2 to W25 and the upper surface of each wafer W1 to W24 held below. Is the measurement of the interval. Since there is no wafer below the wafer W1 held at the bottom, the measurement pitch MP2 does not exist. The measurement center positions MT1 to MT25 are the center positions of the wafers W2 to W25 in the height direction.

Subsequently, the control unit 55 compares the calculated data of the processed wafer mapping with the calculated data of the reference mapping stored in the calibration process, and determines whether to take out the wafers W1 to W25 according to the result. A judgment process is performed. First, from the calculated data of the processed wafer mapping and the calculated data of the reference mapping, the measured thicknesses MB1 to MB25 and the reference thickness MB01 to
The error with MB025 is calculated, and this error is
Confirm that the thickness of W25 is within the preset thickness tolerance. On the other hand, the measured pitches MP2 to MP25 and the reference pitches MP02 to MP02 are calculated from the processed wafer mapping calculation data and the reference mapping calculation data.
The error with respect to No. 5 is obtained, and it is confirmed that this error is within the range of the permissible error of the pitch preset for each of the wafers W1 to W25.

Here, for example, as in the case of the measured thickness MBX shown in FIG. 14B, the measured thickness M that is not within the allowable error range.
If B is detected, as shown in FIG. 10, whether there is a cross-slot wafer WX obliquely held across two slots in the wafers W1 to W25 in the carrier C. ， The state that there are two or more wafers W in one slot, or a wafer W thicker than the standard
Is mistakenly recognized as being contained. Then, an alarm is given to the operator. Also,
For example, like the measurement pitch MPN shown in FIG.
When the measurement pitch MP that is not within the allowable error range is detected, as shown in FIG. 11, the slot S1 of the carrier C is detected.
~ S25 is a slot S that does not hold the wafer W
It is recognized that the presence of N is the cause.

Further, based on the calculated data of the processed wafer mapping and the calculated data of the reference mapping, the measurement center positions MT1 to MT25 in the height direction and the reference measurement center position MT01.
~ The error from MT025 is calculated, and this error is calculated for each wafer W1.
Confirm that it is within the allowable error range calculated for the center position of W25. Here, for example, in FIG.
When the measurement center position MT is displaced from the reference mapping data D0 to a higher position as in the processing wafer mapping data D shown in FIG. As described above, it is recognized that the state in which the carrier C is tilted and placed in the slots S1 to S25 of the carrier C is the cause. Then, an alarm is given to the operator.

Further, as in the processed wafer mapping data D shown in FIG. 15B, when the measurement center position MT is displaced from the reference mapping data D0 to a lower position,
As shown in FIG. 3, it is recognized that the carrier C is distorted. If the measurement center position MT is out of the allowable error range, the operator is warned by an alarm. In this way, when the measurement center position MT is displaced from the reference mapping data D0 to a lower position, it is recognized that the carrier C is distorted.
Alternatively, as shown in FIG. 15B, the measurement center position MT is displaced from the reference mapping data D0 to a lower position and the measurement pitch MP is shorter than the reference mapping data D0.
When F is present, it may be recognized that the carrier C is distorted.

When the abnormal state of the accommodation state of the wafer W is recognized by the above comparison, the operator waits for a stop command or a command for performing the process wafer mapping step again. It is not possible to receive the order to take out. That is, the taking out of the wafer W cannot be continued and the taking out is stopped. Therefore, the operator who receives the warning, after visually confirming the accommodation state of the carrier C and the wafer W in the slots S1 to S25, for example, takes action according to the cause when there is an abnormality. Further, the processed wafer mapping step may be performed again. In this case, the reliability of the data can be improved by reconfirming the processed wafer mapping data.

In the state where the cross slot wafer WX is generated, the unprocessed wafers from the other normally accommodated slots S are excluded except for the two-stage slots S which the cross slot wafer WX straddles. Try to take out W. In addition, the slot S that does not hold the wafer W
Even in the state where N exists, it is sufficient to instruct to take out the unprocessed wafer W from the other normally accommodated slot S.

Further, when the carrier C is tilted and mounted, foreign matter may be attached to the mounting table 10. Therefore, it is necessary to confirm the state of the mounting table 10. Then, the carrier C is placed normally. Alternatively, the wafer W is taken out from another normally mounted carrier C.

When the carrier C is distorted,
It is necessary to stop using the carrier C and replace it with a new carrier C. Therefore, the carrier C is excluded to the outside, and the unprocessed wafer W in the new carrier C is taken out.

If the number of wafers W is larger than the number of reference wafers W0 recognized in the reference mapping process,
Since it is highly likely that the Z-direction drive mechanism of the sensor arms 37a and 37b is malfunctioning or defective, after visually confirming the states of the wafers W1 to W25 in the carrier C,
Check the state of the Z-direction drive mechanism and detect any defects.

When it is confirmed that the error is within the permissible error of the measurement thickness MB, the measurement pitch MP and the measurement center position MT preset for each of the wafers W1 to W25, the controller 55 causes the carrier C Each wafer W1 in
From the processing wafer mapping data D regarding W25, the standby position, the lower loading / unloading position, the lower back position, the upper back position, the upper loading / unloading position, and the upper standby position of the loading / unloading arm 35 for the wafer W are calculated. After that, the wafer W is taken out. When the wafer W is taken out from the carrier C, the taking-out and storing arm 35 is operated in the order of the standby position, the lower loading / unloading position, the lower back position, the upper back position, the upper loading / unloading position, and the upper waiting position. In this way, the wafer W is taken out one by one by the taking-out storing arm 35 of the wafer transfer device 25.

As described above, the measurement thicknesses MB1 to MB25 and the measurement pitch MP in the processing wafer mapping process.
Even when 2 to MP25 are alternately detected at regular intervals, when the processed wafer mapping data D and the reference mapping data D0 are compared in the comparison / determination step, the wafers W1 to W25 are held in an inclined state. The state can be detected. This makes it possible to detect, for example, a state in which the carrier C itself is tilted and placed, or a state in which the carrier C is distorted. In such a case, each wafer W1 to W2
Since the taking-out of the wafers 5 is stopped, it is possible to prevent the holding and holding arms 35 from holding the wafers W1 to W25 abnormally.

The wafer W is carried out to the wafer transfer unit 5 by the taking-out and storing arm 35 being in a state of supporting the wafer W taken out at the standby position of the base 30. afterwards,
The base 30 of the wafer transfer device 25 is rotated 180 degrees (°) in FIG. 1, and the entire wafer transfer device 25 is slid in the Y direction. By the movement of the wafer transfer device 25, the wafer W is transferred to the wafer delivery units 67, 68 side of the cleaning processing unit 3. Then, the base 30 of the wafer transfer device 25 is slid in the Z direction in FIG.
The take-out and storage arm 35 and the wafer W are adjusted to a height at which they can be inserted into the lower wafer transfer unit 67, for example. After that, the wafer W is placed on the wafer transfer unit 67 by the movement (slide) of the take-out and storage arm 35.

Next, the main wafer transfer device 65 receives the wafer W placed on the wafer transfer unit 67 by, for example, the transfer arm 78a, and each substrate cleaning unit 7 receives the wafer W.
Carry it in 0, 71, 72, 73 as appropriate. In this way, the wafer W is cleaned in each of the substrate cleaning units 70, 71, 72, 73. When the predetermined cleaning process is completed, the wafer W is transferred to the main wafer transfer device 65, for example, the transfer arm 78.
Each substrate cleaning unit 70, 71, 72, 73 by b
From the wafer transfer unit 68 on the upper stage.
Placed on. Subsequently, the take-out and storage arm 35 of the wafer transfer device 25 slides to move the wafer transfer unit 6
The wafer W placed on No. 8 is received.

When the wafer W is stored in the carrier C,
The upper storage position, the upper storage position, the upper rear position, the lower rear position, the lower storage position standby position, and the extraction storage arm 35 in this order.
And the wafer W is held by the slot S.
In the step of storing the wafer W, when the carrier C in which the wafer W before the cleaning process is stored and the carrier C in which the wafer W after the cleaning process is stored are the same, , The take-out storage arm 3 according to various position information calculated based on the processed wafer mapping data D
5 is operated. When the carrier C in which the wafer W before the cleaning process is stored and the carrier C in which the wafer W after the cleaning process is stored are different, based on the reference mapping data D0. The take-out storage arm 35 is operated according to the calculated various position information.
In this case, the throughput can be improved. In addition, the upper standby position, the upper entrance / exit position, the upper rear position, the lower rear position, and the lower entrance / exit position standby position may be detected by performing mapping again in the wafer W storing process. In this case, for example, when the wafer W is accommodated above and below the slot S for accommodating the wafer W, it is possible to reliably prevent abnormalities in holding the wafer by the take-out and storage arm 35.
In this way, the wafer W that has been subjected to the cleaning process is stored in the carrier C again.

In the method of taking out the wafer W, it is possible to detect the state in which the cross slot wafer WX is generated and the state in which the slot SN which does not hold the wafer W exists. Further, by having the step of comparing and determining the reference mapping data D0 and the processed wafer mapping data D, it is possible to detect the state in which the carrier C is mounted in an inclined state. In addition, the sensor arms 37a, 3
It is possible to detect a defect in the Z-direction drive mechanism 7b, such as a servo mechanism. Furthermore, the modified carrier C
It is possible to detect the replacement time. Therefore, it is possible to prevent abnormalities in holding the wafers W1 to W25 by the unloading and storing arm 35.

An example of the preferred embodiment of the present invention has been described above. However, it goes without saying that the present invention is not limited to the above-described embodiment and can be appropriately modified and implemented. For example, the present invention can be applied to the case where the take-out storage arm 35 is fixed and the carrier C side is moved. Further, the substrate of the present invention is not limited to the semiconductor wafer, but other glass for LCD substrate, CD substrate, printed circuit board,
It may be a ceramic substrate or the like. Furthermore, the present invention can be applied to all processing systems having a carrier for accommodating a substrate, for example, a processing system incorporating a resist coating apparatus for semiconductor wafers, a CVD apparatus, a sputtering apparatus and the like.

[0077]

According to the present invention, it is possible to detect the state where the carrier is tilted and placed. It is possible to detect a defect in the substrate detection means. Further, it is possible to detect the replacement time of the deformed carrier. Therefore, it is possible to prevent the substrate from being abnormally held by the take-out and storage arm.

[Brief description of drawings]

FIG. 1 is a plan view of a cleaning processing system.

FIG. 2 is a side view of the cleaning processing system.

FIG. 3 is a perspective view of a carrier containing a wafer.

FIG. 4 is a plan view showing a configuration of a take-out storage arm.

FIG. 5 is a front view showing a configuration of a take-out storage arm.

FIG. 6 is a side view showing the configuration and operation of the take-out storage arm.

FIG. 7 is an explanatory diagram showing the positions of a wafer and a take-out storage arm in a carrier.

FIG. 8 is a schematic cross-sectional view for explaining a mapping operation.

FIG. 9 is a schematic vertical sectional view showing a state where the wafer is normally held in the slot.

FIG. 10 is a schematic vertical cross-sectional view showing a state where a cross slot is generated.

FIG. 11 is a schematic vertical cross-sectional view showing a state where there is a slot that does not hold a wafer.

FIG. 12 is a schematic vertical cross-sectional view showing a state in which the carrier is tilted and placed.

FIG. 13 is a schematic vertical sectional view showing a state where a wafer is held by a deformed carrier.

FIG. 14 is an explanatory diagram showing mapping data.

FIG. 15 is an explanatory diagram illustrating a shift between reference mapping data and abnormal mapping data caused by a carrier state.

[Explanation of symbols]

C carrier C0 reference carrier D processing wafer mapping data D0 standard mapping data MB measurement thickness MB0 standard thickness MP measurement pitch MP0 standard pitch MT measurement center position MT0 reference measurement center position RB actual thickness RP actual pitch S, S1 to S25 slots S01-S025 Reference slot W, W1 to W25 wafers W01-W025 Reference wafer 1 Cleaning system 3 loading / unloading section 4 in / out port 5 Wafer transfer section 10 table 11 upper surface 15 Wafer ejection opening 17 boundary wall 25 Wafer transfer device 35 Extraction storage arm 37a, 37b Sensor arm 50 light emitting element 51 Light receiving element 55 Control unit 65 Main wafer transfer device 67,68 Wafer transfer unit 70,71,72,73 Substrate cleaning unit

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kazuyoshi Namba             TBS release, 5-3-6 Akasaka, Minato-ku, Tokyo             Sending Center Tokyo Electron Limited F term (reference) 3C007 AS03 AS24 BS15 CT04 CV03                       KS05 KV12 KX00 KX07 LV00                       LV12 LV20 NS12 NS13                 5F031 CA02 CA05 DA01 FA01 FA02                       FA07 FA11 GA36 GA38 GA47                       GA49 JA05 JA21 JA32 KA02                       KA10 KA11 LA09 MA23 PA30                 5F046 AA21 CD10

Claims (10)

[Claims] 1. A method of holding a plurality of substrates in multiple stages by a carrier having a plurality of slots for horizontally holding the substrates and taking out the substrates from the carrier, wherein each reference slot provided in a reference carrier is provided. A reference mapping step of determining or detecting the thickness and pitch of each stored reference substrate and detecting the position, and a processing of detecting the thickness, pitch and position of each substrate to be processed stored in each slot provided in the carrier The thickness, pitch and detected position determined or detected in the substrate mapping step and the reference mapping step are compared with the thickness, pitch and position detected in the processed substrate mapping step, and the processed object is processed according to the result of the comparison. A method of taking out a substrate, comprising a comparison / judgment step of making a decision to take out the substrate. 2. The comparison and judgment step detects an error between the thickness, pitch and detected position determined or detected in the reference mapping step and the thickness, pitch and position detected in the processed substrate mapping step, The method for taking out a substrate according to claim 1, wherein the taking out is performed when the error is within a tolerance. 3. When the position detected in the target substrate mapping step is outside the allowable error range and is higher than the position detected in the reference mapping step, the taking out is stopped and the carrier is tilted. The method for taking out a substrate according to claim 2, wherein the mounted state is detected. 4. The substrate to be processed is stopped when the position detected in the substrate mapping step is out of the allowable error range and is lower than the position detected in the reference mapping step. The method for taking out a substrate according to claim 2, wherein the carrier accommodating the substrate is replaced. 5. The pitch and position detected in the substrate mapping step are out of the respective allowable error ranges,
The substrate taking-out method according to claim 2, wherein the taking-out is stopped and the carrier accommodating the substrate to be processed is replaced when the position is lower than the position detected in the reference mapping step. 6. When the number of substrates to be processed detected in the substrate to be processed mapping step is larger than the number of reference substrates detected in the reference mapping step, the removal is stopped and a defect of the substrate detection means is detected. The method for taking out a substrate according to claim 2, wherein the substrate is taken out. 7. The method of extracting a substrate according to claim 2, wherein the substrate mapping step is performed again when the error is out of the allowable error range. 8. The tolerance of the position is set to be the narrowest for the lowermost substrate.
8. The method of taking out a substrate according to any one of 7. 9. The method of taking out a substrate according to claim 2, wherein the allowable error of the position is set wider from the lowermost substrate toward the uppermost substrate. 10. The substrate according to claim 1, wherein the thickness, pitch and position are detected by moving an optical sensor along a direction in which the plurality of substrates are arranged. How to take out.