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JP2003168748A - 不揮発性半導体記憶装置およびその製造方法 - Google Patents

不揮発性半導体記憶装置およびその製造方法

Info

Publication number
JP2003168748A
JP2003168748A JP2001366870A JP2001366870A JP2003168748A JP 2003168748 A JP2003168748 A JP 2003168748A JP 2001366870 A JP2001366870 A JP 2001366870A JP 2001366870 A JP2001366870 A JP 2001366870A JP 2003168748 A JP2003168748 A JP 2003168748A
Authority
JP
Japan
Prior art keywords
gate
insulating film
region
memory device
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001366870A
Other languages
English (en)
Japanese (ja)
Inventor
Takashi Kobayashi
小林　　孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001366870A priority Critical patent/JP2003168748A/ja
Priority to KR1020020072962A priority patent/KR20030044795A/ko
Priority to US10/301,643 priority patent/US6741501B2/en
Priority to TW091134648A priority patent/TW200301011A/zh
Publication of JP2003168748A publication Critical patent/JP2003168748A/ja
Priority to US10/819,270 priority patent/US6984567B2/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP2001366870A 2001-11-30 2001-11-30 不揮発性半導体記憶装置およびその製造方法 Pending JP2003168748A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001366870A JP2003168748A (ja) 2001-11-30 2001-11-30 不揮発性半導体記憶装置およびその製造方法
KR1020020072962A KR20030044795A (ko) 2001-11-30 2002-11-22 불휘발성 반도체 기억장치 및 그 제조방법
US10/301,643 US6741501B2 (en) 2001-11-30 2002-11-22 Nonvolatile semiconductor memory device and manufacturing method thereof
TW091134648A TW200301011A (en) 2001-11-30 2002-11-28 Nonvolatile semiconductor memory device and manufacturing method thereof
US10/819,270 US6984567B2 (en) 2001-11-30 2004-04-07 Nonvolatile semiconductor memory device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001366870A JP2003168748A (ja) 2001-11-30 2001-11-30 不揮発性半導体記憶装置およびその製造方法

Publications (1)

Publication Number Publication Date
JP2003168748A true JP2003168748A (ja) 2003-06-13

Family

ID=19176707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001366870A Pending JP2003168748A (ja) 2001-11-30 2001-11-30 不揮発性半導体記憶装置およびその製造方法

Country Status (4)

Country Link
US (2) US6741501B2 (zh)
JP (1) JP2003168748A (zh)
KR (1) KR20030044795A (zh)
TW (1) TW200301011A (zh)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005085903A (ja) * 2003-09-05 2005-03-31 Renesas Technology Corp 半導体装置およびその製造方法
JP2006049772A (ja) * 2004-08-09 2006-02-16 Nec Electronics Corp 半導体記憶装置及びその製造方法
JP2006339599A (ja) * 2005-06-06 2006-12-14 Renesas Technology Corp 半導体装置およびその製造方法
US7872298B2 (en) 2006-08-03 2011-01-18 Renesas Electronics Corporation Split-gate type memory device
JP2011018941A (ja) * 2010-10-12 2011-01-27 Renesas Electronics Corp 半導体装置の製造方法
JP2019525482A (ja) * 2016-08-08 2019-09-05 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 低背スプリットゲート型メモリセルを形成する方法
JP2023532238A (ja) * 2020-06-23 2023-07-27 シリコン ストーリッジ テクノロージー インコーポレイテッド 基板にメモリセル、高電圧デバイス、及び論理デバイスを作製する方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040129986A1 (en) * 2002-11-28 2004-07-08 Renesas Technology Corp. Nonvolatile semiconductor memory device and manufacturing method thereof
JP2004297028A (ja) * 2003-02-04 2004-10-21 Sharp Corp 半導体記憶装置
KR100500581B1 (ko) * 2003-02-20 2005-07-18 삼성전자주식회사 반도체 장치에서 게이트 전극 형성 방법
KR100493061B1 (ko) * 2003-06-20 2005-06-02 삼성전자주식회사 비휘발성 메모리가 내장된 단일 칩 데이터 처리 장치
US7425482B2 (en) * 2004-10-13 2008-09-16 Magna-Chip Semiconductor, Ltd. Non-volatile memory device and method for fabricating the same
JP2007184466A (ja) * 2006-01-10 2007-07-19 Renesas Technology Corp 半導体装置およびその製造方法
JP2007250854A (ja) * 2006-03-16 2007-09-27 Nec Electronics Corp 半導体記憶装置およびその製造方法
US7790544B2 (en) 2006-03-24 2010-09-07 Micron Technology, Inc. Method of fabricating different gate oxides for different transistors in an integrated circuit
US8106443B2 (en) * 2007-10-09 2012-01-31 Genusion, Inc. Non-volatile semiconductor memory device
US8450199B2 (en) * 2008-12-22 2013-05-28 Micron Technology, Inc. Integrating diverse transistors on the same wafer
JP2011035169A (ja) * 2009-07-31 2011-02-17 Renesas Electronics Corp 不揮発性半導体記憶装置及びその製造方法
US9159842B1 (en) 2014-03-28 2015-10-13 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded nonvolatile memory
WO2016164318A1 (en) * 2015-04-05 2016-10-13 NEO Semiconductor, Inc. Two transistor sonos flash memory
WO2020262248A1 (ja) * 2019-06-28 2020-12-30 株式会社ソシオネクスト 半導体記憶装置
US11315636B2 (en) * 2019-10-14 2022-04-26 Silicon Storage Technology, Inc. Four gate, split-gate flash memory array with byte erase operation
CN112951833B (zh) * 2019-12-11 2023-06-16 力旺电子股份有限公司 具隔离阱区的存储单元及其相关非挥发性存储器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3444687B2 (ja) * 1995-03-13 2003-09-08 三菱電機株式会社 不揮発性半導体記憶装置
KR0142603B1 (ko) * 1995-03-14 1998-07-01 김주용 플래쉬 이이피롬 셀 및 그 제조방법
JP2882392B2 (ja) * 1996-12-25 1999-04-12 日本電気株式会社 不揮発性半導体記憶装置およびその製造方法
KR100261996B1 (ko) * 1997-11-13 2000-07-15 김영환 플래쉬 메모리 셀 및 그의 제조방법
JP3196717B2 (ja) * 1998-03-16 2001-08-06 日本電気株式会社 不揮発性半導体記憶装置及びその製造方法
JP3279263B2 (ja) * 1998-09-04 2002-04-30 日本電気株式会社 不揮発性半導体記憶装置の製造方法
JP4012341B2 (ja) 1999-07-14 2007-11-21 株式会社ルネサステクノロジ 半導体集積回路装置

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8907399B2 (en) 2003-09-05 2014-12-09 Renesas Electronics Corporation Semiconductor device with flash memory cells having improved arrangement for floating gate electrodes and control gate electrodes of the flash memory cells
US9412747B2 (en) 2003-09-05 2016-08-09 Renesas Electronics Corporation Semiconductor device and a method of manufacturing the same
US7064380B2 (en) 2003-09-05 2006-06-20 Renesas Technology Corp. Semiconductor device and a method of manufacturing the same
US8212305B2 (en) 2003-09-05 2012-07-03 Renesas Electronics Corporation Semiconductor device with improved insulating film and floating gate arrangement to decrease memory cell size without reduction of capacitance
US7312123B2 (en) 2003-09-05 2007-12-25 Renesas Technology Corp. Semiconductor device and a method of manufacturing the same
US7662686B2 (en) 2003-09-05 2010-02-16 Renesas Technology Corp. Semiconductor device and a method of manufacturing the same
JP2005085903A (ja) * 2003-09-05 2005-03-31 Renesas Technology Corp 半導体装置およびその製造方法
US8466507B2 (en) 2003-09-05 2013-06-18 Renesas Electronics Corporation Semiconductor device and a method of manufacturing the same
JP2006049772A (ja) * 2004-08-09 2006-02-16 Nec Electronics Corp 半導体記憶装置及びその製造方法
US8008705B2 (en) 2004-08-09 2011-08-30 Renesas Electronics Corporation Semiconductor storage device and method of manufacturing same
JP2006339599A (ja) * 2005-06-06 2006-12-14 Renesas Technology Corp 半導体装置およびその製造方法
US7935597B2 (en) 2006-08-03 2011-05-03 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
US7872298B2 (en) 2006-08-03 2011-01-18 Renesas Electronics Corporation Split-gate type memory device
JP2011018941A (ja) * 2010-10-12 2011-01-27 Renesas Electronics Corp 半導体装置の製造方法
JP2019525482A (ja) * 2016-08-08 2019-09-05 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 低背スプリットゲート型メモリセルを形成する方法
JP2023532238A (ja) * 2020-06-23 2023-07-27 シリコン ストーリッジ テクノロージー インコーポレイテッド 基板にメモリセル、高電圧デバイス、及び論理デバイスを作製する方法
JP7562713B2 (ja) 2020-06-23 2024-10-07 シリコン ストーリッジ テクノロージー インコーポレイテッド 基板にメモリセル、高電圧デバイス、及び論理デバイスを作製する方法

Also Published As

Publication number Publication date
US20040191993A1 (en) 2004-09-30
KR20030044795A (ko) 2003-06-09
TW200301011A (en) 2003-06-16
US20030103382A1 (en) 2003-06-05
US6984567B2 (en) 2006-01-10
US6741501B2 (en) 2004-05-25

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