JP2003034591A - Molecular beam source cell for depositing thin film - Google Patents
Molecular beam source cell for depositing thin filmInfo
- Publication number
- JP2003034591A JP2003034591A JP2001219172A JP2001219172A JP2003034591A JP 2003034591 A JP2003034591 A JP 2003034591A JP 2001219172 A JP2001219172 A JP 2001219172A JP 2001219172 A JP2001219172 A JP 2001219172A JP 2003034591 A JP2003034591 A JP 2003034591A
- Authority
- JP
- Japan
- Prior art keywords
- beam source
- molecular beam
- source cell
- crucible
- evaporation material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 238000000151 deposition Methods 0.000 title abstract description 4
- 239000000463 material Substances 0.000 claims abstract description 101
- 238000001704 evaporation Methods 0.000 claims abstract description 97
- 230000008020 evaporation Effects 0.000 claims abstract description 92
- 239000010408 film Substances 0.000 claims description 27
- 238000000427 thin-film deposition Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 230000002093 peripheral effect Effects 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000011358 absorbing material Substances 0.000 claims 1
- 238000007599 discharging Methods 0.000 abstract 2
- 238000009826 distribution Methods 0.000 description 12
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 8
- 238000012546 transfer Methods 0.000 description 6
- 230000008016 vaporization Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000011364 vaporized material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical compound C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 aluminum quinolinol Chemical compound 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、蒸発材料を加熱す
ることにより、その蒸発材料を溶融、蒸発して、固体表
面に薄膜を成長させるための蒸発分子を発生する薄膜堆
積用分子線源セルに関し、特に熱伝導率の低い有機エレ
クトロルミネッセンス材料等の蒸発に好適な分子線源セ
ルに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a molecular beam source cell for thin film deposition, in which a vaporized material is heated to melt and vaporize the vaporized material to generate vaporized molecules for growing a thin film on a solid surface. In particular, the present invention relates to a molecular beam source cell suitable for vaporizing an organic electroluminescent material having a low thermal conductivity.
【0002】[0002]
【従来の技術】分子線エピタキシ装置と呼ばれる薄膜堆
積装置は、高真空に減圧可能な真空チャンバ内に半導体
ウエハ等の基板を設置し、所要の温度に加熱すると共
に、この基板の薄膜成長面に向けてクヌードセンセル等
の分子線源セルを設置したものである。この分子線源セ
ルの坩堝に収納した蒸発材料をヒータにより加熱して溶
融、蒸発させ、これにより発生した蒸発分子を前記基板
の薄膜成長面に入射し、その面に薄膜をエピタキシャル
成長させて、蒸発材料の膜を形成する。2. Description of the Related Art A thin film deposition apparatus called a molecular beam epitaxy apparatus places a substrate such as a semiconductor wafer in a vacuum chamber capable of reducing the pressure to a high vacuum, heats it to a required temperature, and grows it on the thin film growth surface of this substrate. A molecular beam source cell such as a Knudsen cell is installed for this purpose. The evaporation material housed in the crucible of this molecular beam source cell is heated by a heater to melt and evaporate, and the evaporated molecules generated by this are incident on the thin film growth surface of the substrate, and the thin film is epitaxially grown on that surface and evaporated. Form a film of material.
【0003】図8は、このような薄膜堆積装置に使用さ
れる分子線源セルの従来例である。この分子線源セル
は、熱的、化学的に安定性の高い、例えばPBN(パイ
ロリティック・ボロン・ナイトライド)等からなる坩堝
3の中に蒸発材料cを収納し、この蒸発材料cを坩堝3
の外側に設けた電気ヒータ5で加熱し、これにより蒸発
材料を溶融、蒸発させ、蒸発分子を発生させ、これを放
出口4から放出し、基板上に堆積させるものである。FIG. 8 shows a conventional example of a molecular beam source cell used in such a thin film deposition apparatus. In this molecular beam source cell, an evaporation material c is housed in a crucible 3 made of, for example, PBN (pyrolytic boron nitride) having high thermal and chemical stability, and the evaporation material c is placed in the crucible. Three
Is heated by an electric heater 5 provided on the outer side of the substrate to melt and vaporize the vaporized material to generate vaporized molecules, which are emitted from the emission port 4 and deposited on the substrate.
【0004】図8から明らかなように、従来の分子線源
セルの坩堝3は、全体としてほぼ均一な内径を有する有
底円筒形のものであり、これを周囲から加熱するヒータ
5としては、コイル状に巻かれたシーズヒータが使用さ
れている。坩堝3の底部中央に測温接点を接触させた熱
電対7により坩堝3の温度を測定しながらヒータ5の加
熱温度を制御し、蒸発材料cを蒸発させる。As is apparent from FIG. 8, the conventional crucible 3 of the molecular beam source cell is a bottomed cylindrical shape having a substantially uniform inner diameter as a whole, and the heater 5 for heating this from the surroundings is as follows. A sheathed heater wound in a coil is used. The heating temperature of the heater 5 is controlled while the temperature of the crucible 3 is measured by the thermocouple 7 having a temperature measuring contact in contact with the bottom center of the crucible 3, and the evaporation material c is evaporated.
【0005】近年、ディスプレイや光通信等の分野で、
有機エレクトロルミネッセンス素子(有機EL素子)の
研究、開発が進められている。この有機EL素子は、E
L発光能を有する有機低分子または有機高分子材料で発
光層を形成した素子であり、自己発光型の素子としてそ
の特性が注目されている。例えばその基本的な構造は、
ホール注入電極上にトリフェニルジアミン(TPD)等
のホール輸送材料の膜を形成し、この上にアルミキノリ
ノール錯体(Alq3) 等の蛍光物質を発光層として積
層し、さらにMg、Li、Cs等の仕事関数の小さな金
属電極を電子注入電極として形成したものである。In recent years, in fields such as displays and optical communication,
Research and development of organic electroluminescence elements (organic EL elements) are under way. This organic EL device is
It is an element in which a light emitting layer is formed of an organic low molecule or an organic polymer material having an L light emitting ability, and its characteristics are drawing attention as a self light emitting element. For example, its basic structure is
A film of a hole transport material such as triphenyldiamine (TPD) is formed on the hole injecting electrode, and a fluorescent substance such as aluminum quinolinol complex (Alq 3 ) is laminated as a light emitting layer on the film, and further Mg, Li, Cs, etc. Is a metal electrode having a small work function as an electron injection electrode.
【0006】[0006]
【発明が解決しようとしている課題】このような有機E
L素子を形成する各層は、前述のような薄膜堆積装置を
使用して形成される。特に有機EL膜を形成するための
有機EL材料は、融点が低く、しかも熱伝導率が低い。
また、高分子材料であるため、長時間高温に晒される
と、高分子の鎖をなす化学的結合が破壊される等して、
熱損傷を受けやすい。このような熱損傷を受けると、分
子の堆積により形成された膜において、所要の特性が得
られないこともある。[Problems to be Solved by the Invention] Such an organic E
Each layer forming the L element is formed using the thin film deposition apparatus as described above. In particular, the organic EL material for forming the organic EL film has a low melting point and a low thermal conductivity.
Also, since it is a polymer material, if it is exposed to high temperature for a long time, the chemical bonds that form the chains of the polymer will be broken, etc.
It is easily damaged by heat. When subjected to such heat damage, the film formed by the deposition of molecules may not have the required properties.
【0007】ところが、前述のような分子線源セルで
は、ヒータ5としてシーズヒータが使用されているた
め、ヒータ5の発熱線で発生した熱がマグネシア等の無
機絶縁粉末とステンレス等のシースを介して坩堝3に伝
熱されるため、熱応答性が悪く、蒸発材料が蒸発される
までに長時間高温に晒されることになる。However, in the molecular beam source cell as described above, since the sheath heater is used as the heater 5, the heat generated in the heating wire of the heater 5 passes through the inorganic insulating powder such as magnesia and the sheath such as stainless steel. Since the heat is transferred to the crucible 3, the heat response is poor and the evaporation material is exposed to a high temperature for a long time before being evaporated.
【0008】さらに、図8に二点鎖線で示すように、ヒ
ータ5に近い坩堝3の周壁に近い部分の蒸発材料cの温
度が高く、坩堝3の周壁から遠い中央部の蒸発材料cの
温度が低くなるような温度分布が生じてしまう。このた
め、ヒータで加熱される坩堝3の周壁に近い周囲の部分
では、蒸発に必要な所要の温度が得られても、坩堝3の
中央側で温度が極端に低くなり、蒸発材料cの蒸発温度
に満たない状態となる。この結果、坩堝3に収納された
蒸発材料cのうち、坩堝3の周壁に近い周囲の部分のみ
が蒸発され、坩堝3の中央部にある蒸発材料cが蒸発さ
れずに残ってしまう。そのため、蒸発材料cの歩留まり
が悪いだけでなく、温度の不均一性による膜の欠陥等が
生じやすい。Further, as shown by a chain double-dashed line in FIG. 8, the temperature of the evaporation material c near the peripheral wall of the crucible 3 near the heater 5 is high, and the temperature of the evaporation material c at the central portion far from the peripheral wall of the crucible 3 is high. A temperature distribution that lowers the temperature will occur. Therefore, in the peripheral portion near the peripheral wall of the crucible 3 heated by the heater, the temperature becomes extremely low on the central side of the crucible 3 even if the required temperature for evaporation is obtained, and the evaporation material c evaporates. The temperature is below the temperature. As a result, of the evaporation material c stored in the crucible 3, only the peripheral portion close to the peripheral wall of the crucible 3 is evaporated, and the evaporation material c in the central portion of the crucible 3 remains without being evaporated. Therefore, not only the yield of the evaporation material c is poor, but also defects in the film due to the non-uniformity of the temperature are likely to occur.
【0009】さらに、この温度分布の不均一性は、図8
において一点鎖線で示す坩堝3の中心軸方向に沿っても
生じる。図9は、坩堝3の中心軸方向の温度分布と放出
口4の径方向に沿った温度分布を模式的に示している。
さらに、前記のような円筒形の坩堝3では、放出口4か
ら放出される蒸発材料cの分子が坩堝3の周壁の内面に
沿って放射されるため、図8において一点鎖線で示す坩
堝3の中心軸方向の延長線に近い部分の分子のフラック
ス密度が極端に大きくなる。この結果、蒸発材料cの分
子が基板に堆積することにより形成される膜は、図8に
おいて一点鎖線で示す坩堝3の中心軸と基板の成膜面と
が交差する部分の膜厚が極端に厚くなり、それから遠く
なるに従って膜厚が急激に薄くなるというような膜厚の
不均一性が生じる。Further, the non-uniformity of this temperature distribution is shown in FIG.
Also occurs along the direction of the central axis of the crucible 3 indicated by the alternate long and short dash line. FIG. 9 schematically shows the temperature distribution in the central axis direction of the crucible 3 and the temperature distribution in the radial direction of the discharge port 4.
Further, in the cylindrical crucible 3 as described above, since the molecules of the evaporation material c emitted from the emission port 4 are radiated along the inner surface of the peripheral wall of the crucible 3, the crucible 3 shown by a dashed line in FIG. The flux density of molecules near the extension line in the central axis direction becomes extremely large. As a result, the film formed by depositing the molecules of the evaporation material c on the substrate has an extremely large film thickness at the portion where the central axis of the crucible 3 shown by the alternate long and short dash line in FIG. The non-uniformity of the film thickness occurs such that the film thickness becomes thicker and the film thickness becomes sharply thinner with increasing distance.
【0010】本発明は、このような従来の分子線源セル
における課題に鑑み、坩堝の中での温度勾配を小さく
し、有機EL材料のような高分子であって熱伝導率の低
い蒸発材料でも、熱損傷を与えることなく、効率よく蒸
発して蒸発分子を発生することができるようにすること
を目的とする。さらに、膜を形成する主成分の他に、ド
ーパントのような微量成分である副成分も基板に向けて
同時に放出し、反応蒸着を可能とすることを目的とす
る。加えて、均一な膜厚の成膜を可能とすることを目的
とする。In view of the above problems in the conventional molecular beam source cell, the present invention reduces the temperature gradient in the crucible and is a polymer such as an organic EL material, which is a high evaporation material having a low thermal conductivity. However, it is an object of the present invention to efficiently vaporize and generate vaporized molecules without causing thermal damage. Further, in addition to the main component forming the film, a minor component such as a dopant such as a minor component is simultaneously released toward the substrate to enable reactive vapor deposition. In addition, it is intended to enable film formation with a uniform film thickness.
【0011】[0011]
【課題を解決するための手段】本発明では、前記の目的
を達成するため、坩堝10、20の蒸発材料a、bを収
納するボトムに近い側の蒸発材料収納部11、21を有
底円筒形とし、放出口14、24に近い先端側部分に括
れ部12、22を設け、この括れ部12、22から放出
口14、24までも部分を、テーパガイド部13、23
とした。そして、坩堝10、20の前者の部分と後者の
部分をそれぞれ別のヒータ15、25、16、26で加
熱し、それぞれに最適な温度分布を形成できるようにし
た。According to the present invention, in order to achieve the above-mentioned object, a bottomed cylinder having evaporation material storage portions 11 and 21 on the side close to the bottom of the crucibles 10 and 20 for storing the evaporation materials a and b. And the constricted portions 12 and 22 are provided at the tip side portions near the ejection ports 14 and 24, and the constricted portions 12 and 22 to the ejection ports 14 and 24 are tapered guide portions 13 and 23.
And Then, the former part and the latter part of the crucibles 10 and 20 were heated by different heaters 15, 25, 16 and 26, respectively, so that optimum temperature distributions could be formed respectively.
【0012】より具体的に説明する、本発明による薄膜
堆積用分子線源セルは、坩堝10、20の蒸発材料a、
bを収納するボトムに近い側の蒸発材料収納部11、2
1が円筒形であり、放出口14、24に近い先端側部分
に括れ部12、22を有し、この括れ部12、22から
放出口14、24までの部分が次第に内径が増大するテ
ーパを有するテーパガイド部13、23となっている。
さらに、ヒータ15、16、25、26が、蒸発材料収
納部11、21を加熱する第一のヒータ15、25と、
括れ部12、22からテーパガイド部13、23にわた
る部分を加熱する第二のヒータ16、26とに分かれて
いる。The molecular beam source cell for thin film deposition according to the present invention, which will be described in more detail, comprises a vaporization material a for the crucibles 10 and 20,
evaporative material storage portions 11 and 2 on the side close to the bottom for storing b
1 has a cylindrical shape, and has constricted portions 12 and 22 at a tip side portion near the discharge ports 14 and 24, and a portion from the constricted portions 12 and 22 to the discharge ports 14 and 24 has a taper whose inner diameter gradually increases. The taper guide portions 13 and 23 are provided.
Further, the heaters 15, 16, 25, and 26 include the first heaters 15 and 25 that heat the evaporation material storage units 11 and 21, and
It is divided into second heaters 16 and 26 for heating a portion extending from the constricted portions 12 and 22 to the taper guide portions 13 and 23.
【0013】このような本発明による薄膜堆積用分子線
源セルでは、坩堝10、20の蒸発材料a、bを収納す
るボトムに近い側の蒸発材料収納部11、21が円筒形
であるのに対し、放出口14、24に近い先端側部分に
括れ部12、22を有し、この括れ部12、22から放
出口14、24までも部分が内径が次第に増大するテー
パを形成したテーパガイド部13、23となっているた
め、蒸発材料収納部11、21に収納された蒸発材料
a、bが蒸発することにより発生した分子のフラックス
がテーパガイド部13、23に形成されたテーパにより
広がりながら放出される。このため、坩堝10、20の
中心軸の延長線の部分に分子のフラックスの密度が集中
しない。これにより、基板33の成膜面上に均一な膜厚
の薄膜を形成することができる。In such a molecular beam source cell for thin film deposition according to the present invention, the evaporation material storage portions 11 and 21 of the crucibles 10 and 20 near the bottom for storing the evaporation materials a and b have a cylindrical shape. On the other hand, the taper guide portion has constricted portions 12 and 22 at the tip side portion near the ejection ports 14 and 24, and the constricted portions 12 and 22 to the ejection ports 14 and 24 are tapered so that the inner diameter gradually increases. 13 and 23, the molecular flux generated by the evaporation of the evaporation materials a and b stored in the evaporation material storage sections 11 and 21 spreads due to the taper formed in the taper guide sections 13 and 23. Is released. Therefore, the density of the molecular flux is not concentrated on the extension of the central axis of the crucibles 10 and 20. Thereby, a thin film having a uniform film thickness can be formed on the film formation surface of the substrate 33.
【0014】さらに、ヒータ15、16、25、26
が、蒸発材料収納部11、21を加熱する第一のヒータ
15、25と、括れ部12、22からテーパガイド部1
3、23にわたる部分を加熱する第二のヒータ16、2
6とに分かれているため、それぞれの部分を最適な温度
に加熱することができる。特に、括れ部12、22から
テーパガイド部13、23にわたる部分を第二のヒータ
16、26で加熱するため、括れ部12、22での分子
の再凝縮が起こらない。Further, heaters 15, 16, 25, 26
However, the first heaters 15 and 25 for heating the evaporation material storage portions 11 and 21, and the constricted portions 12 and 22 to the taper guide portion 1
Second heaters 16 and 2 for heating a portion extending over 3, 23
Since it is divided into 6, each part can be heated to an optimum temperature. In particular, since the portions extending from the constricted portions 12 and 22 to the taper guide portions 13 and 23 are heated by the second heaters 16 and 26, recondensation of molecules in the constricted portions 12 and 22 does not occur.
【0015】このような分子線源セルは、複数のものを
組み合わせて構成することができる。具体的には、基板
33の成膜面に堆積させる主成分となる蒸発材料aを収
納する坩堝10を備える第一の分子線源セル1と、基板
33の成膜面に堆積させる副成分となる蒸発材料bを収
納する坩堝20を備える第二の分子線源セル2とを組み
合わせる。これにより、基板33の成膜面上に薄膜の主
成分を堆積させることができると同時に、副成分として
ドーパント材料を注入することができる。Such a molecular beam source cell can be constructed by combining a plurality of cells. Specifically, the first molecular beam source cell 1 including the crucible 10 that contains the evaporation material a that is the main component to be deposited on the film formation surface of the substrate 33, and the subcomponents that are deposited on the film formation surface of the substrate 33. The second molecular beam source cell 2 provided with the crucible 20 for containing the evaporation material b As a result, the main component of the thin film can be deposited on the film formation surface of the substrate 33, and at the same time, the dopant material can be injected as a subcomponent.
【0016】このような複合的な分子線源セルにおい
て、第二の分子線源セル2の坩堝20の放出口24から
の蒸発材料bの分子の放出を制限する絞り孔32を設け
る。これにより、第一の分子線源セル1から放射される
主成分の分子と第二の分子線源セルから放射される副成
分の分子とのモル比を所定のモル比にすることができ
る。In such a compound molecular beam source cell, a throttle hole 32 for limiting the emission of molecules of the evaporation material b from the emission port 24 of the crucible 20 of the second molecular beam source cell 2 is provided. Thereby, the molar ratio of the molecule of the main component radiated from the first molecular beam source cell 1 to the molecule of the subcomponent radiated from the second molecular beam source cell can be set to a predetermined molar ratio.
【0017】このような第二の分子線源セル2の坩堝2
0の絞り孔32は、坩堝20と一体の壁により形成して
もよいが、坩堝20のテーパガイド部23の内周側テー
パと同じテーパを有するカップ状の閉止部材31を同テ
ーパガイド部23の中に嵌め込み、このカップ状の閉止
部材31の底壁に絞り孔32を設ける。このカップ状の
閉止部材31に熱吸収性の吸熱塗装28が施してあるか
或いはカップ状の閉止部材31を熱吸収性の吸熱材料に
よる作ると、閉止部材31が第二のヒータ26の熱を吸
収し、前述した分子の再凝縮を防止し、絞り孔32の目
詰まりを確実に防止することができる。The crucible 2 of the second molecular beam source cell 2 as described above
The throttle hole 32 of 0 may be formed by a wall integral with the crucible 20, but a cup-shaped closing member 31 having the same taper as the inner peripheral side taper of the taper guide portion 23 of the crucible 20 is formed in the taper guide portion 23. The cup-shaped closing member 31 is fitted with a throttle hole 32 in the bottom wall. If the cup-shaped closing member 31 is coated with the heat-absorbing endothermic coating 28 or if the cup-shaped closing member 31 is made of a heat-absorbing endothermic material, the closing member 31 will absorb the heat of the second heater 26. It is possible to absorb, prevent the above-mentioned recondensation of molecules, and reliably prevent clogging of the throttle hole 32.
【0018】他方の第一の分子線源セル1の坩堝10に
は、その蒸発材料収納部11の上端部分から括れ部12
及びテーパガイド部13を経て放出口14に至る部分に
熱吸収性の吸熱塗装18を施す。この場合も同様にし
て、第二のヒータ16の熱を吸熱塗装18が吸収するた
め、坩堝10の括れ部12における分子の再凝縮を確実
に防止することができる。In the other crucible 10 of the first molecular beam source cell 1, the evaporation material storage portion 11 is constricted from the upper end portion to the constricted portion 12.
Further, a heat-absorptive endothermic coating 18 is applied to a portion reaching the discharge port 14 via the taper guide portion 13. In this case as well, the heat of the second heater 16 is similarly absorbed by the endothermic coating 18, so that recondensation of molecules in the constricted portion 12 of the crucible 10 can be reliably prevented.
【0019】これらの分子線源セル1、2では、坩堝1
0、20の温度を、その蒸発材料収納部11、21の底
部側に巻いた帯状の測温素子17、27により測定す
る。坩堝10、20の正確な温度は、その底壁より周壁
においてより再現されやすく、これにより、坩堝10、
20の正しい温度を測定することにより、その的確な温
度制御が可能となる。In these molecular beam source cells 1 and 2, the crucible 1
The temperatures 0 and 20 are measured by strip-shaped temperature measuring elements 17 and 27 wound around the bottom side of the evaporation material storage portions 11 and 21. The exact temperature of the crucibles 10, 20 is more likely to be reproduced on the peripheral wall than on its bottom wall, which allows the crucible 10,
By measuring the correct temperature of 20, accurate temperature control becomes possible.
【0020】[0020]
【発明の実施の形態】次に、図面を参照しながら、本発
明の実施の形態について、具体的且つ詳細に説明する。
図1は、基板33に成膜する薄膜として、主成分の蒸発
材料aを蒸発し、その分子を放出する第一の分子線源セ
ル1とドーパント等の副成分の蒸発材料bを蒸発し、そ
の分子を放出する第二の分子線源セル2とを組み合わせ
た複合分子線源セルの例である。BEST MODE FOR CARRYING OUT THE INVENTION Next, embodiments of the present invention will be described specifically and in detail with reference to the drawings.
In FIG. 1, as a thin film to be formed on the substrate 33, the evaporation material a, which is the main component, is evaporated, the first molecular beam source cell 1 that emits its molecules, and the evaporation material b, which is a subcomponent such as a dopant, are evaporated. It is an example of the composite molecular beam source cell which combined with the 2nd molecular beam source cell 2 which discharges the molecule.
【0021】図2と図3は、主成分の蒸発材料aを蒸発
し、その分子を放出する第一の分子線源セル1を示す断
面図と側面図である。坩堝10は、PBN(パイロリテ
ィック・ボロン・ナイトライド)等からなる容器状のも
ので、前述した蒸発材料aを収納する蒸発材料収納部1
1と、この蒸発材料収納部11より放出口14側にあっ
て、一部内径及び外形が細くなった括れ部12と、この
括れ部12から放出口14に至るテーパガイド部13と
を有する。2 and 3 are a sectional view and a side view showing a first molecular beam source cell 1 which evaporates the evaporation material a as a main component and emits its molecules. The crucible 10 is in the form of a container made of PBN (pyrolytic boron nitride) or the like, and the evaporation material storage unit 1 for storing the evaporation material a described above.
1, a constricted part 12 on the discharge port 14 side of the evaporation material storage part 11 and having a partially narrowed inner diameter and outer shape, and a tapered guide part 13 extending from the constricted part 12 to the discharge port 14.
【0022】蒸発材料aを収納する蒸発材料収納部11
は、有底の円筒形であり、その上部の放出口14側は先
が細くなるようなテーパが形成され、その先に内径が最
も細くなった括れ部12を有する。この括れ部12から
先の放出口14に至る部分は、内径及び外径が次第に広
くなるようなテーパが形成されたテーパガイド部13と
なっている。このテーパガイド部13の先に放出口14
が開口している。Evaporation material storage section 11 for storing evaporation material a
Has a bottomed cylindrical shape, and a taper that tapers off is formed on the upper side of the discharge port 14 side, and has a constricted portion 12 with the smallest inner diameter at the tip. A portion from the constricted portion 12 to the discharge port 14 is a tapered guide portion 13 having a taper whose inner diameter and outer diameter are gradually increased. The discharge port 14 is provided at the tip of the taper guide portion 13.
Is open.
【0023】この坩堝10は、二つのヒータ15、16
で囲まれている。第一のヒータ15は、坩堝10の蒸発
材料収納部11の周囲に配置され、その蒸発材料収納部
11を加熱する。この第一のヒータ15は、線状ヒータ
を坩堝10の縦方向に蛇行させると共に、坩堝10の外
周面を囲むように折り曲げられている。第二のヒータ1
6は、坩堝10の蒸発材料収納部11の上部から括れ部
12及びテーパガイド部13を経て放出口14に至る部
分の周囲に配置され、その部分を加熱するものである。
この第二のヒータ16もまた、線状ヒータを坩堝10の
縦方向に蛇行させると共に、坩堝10の外周面を囲むよ
うに折り曲げられている。This crucible 10 has two heaters 15, 16
It is surrounded by. The first heater 15 is arranged around the evaporation material storage portion 11 of the crucible 10 and heats the evaporation material storage portion 11. The first heater 15 has a linear heater meandering in the longitudinal direction of the crucible 10 and is bent so as to surround the outer peripheral surface of the crucible 10. Second heater 1
6 is disposed around the portion from the upper portion of the evaporation material storage portion 11 of the crucible 10 to the discharge port 14 via the constriction portion 12 and the taper guide portion 13, and heats that portion.
The second heater 16 also has a linear heater meandering in the longitudinal direction of the crucible 10 and is bent so as to surround the outer peripheral surface of the crucible 10.
【0024】坩堝10の前記第二のヒータ16で加熱さ
れる部分、すなわち、坩堝10の蒸発材料収納部11の
上部から括れ部12及びテーパガイド部13を経て放出
口14に至る部分の外周面及び内周面の少なくとも何れ
かの面に熱吸収性が良好で、且つ化学的、熱的に安定し
た塗装、例えばグラファイト塗装等の吸熱塗装18が施
されている。図3に示した例では、坩堝10の外周面に
吸熱塗装18が施されている。また、坩堝10の蒸発材
料収納部11の底部近くには、帯状の測温素子17が巻
かれ、この測温素子17により坩堝10の蒸発材料収納
部11底部近くの温度が測定される。The outer peripheral surface of the portion of the crucible 10 heated by the second heater 16, that is, the portion from the upper portion of the evaporation material storage portion 11 of the crucible 10 to the discharge port 14 through the constriction portion 12 and the taper guide portion 13. At least one of the inner peripheral surface and the inner peripheral surface is coated with a heat-absorptive coating 18, which has good heat absorption and is chemically and thermally stable, for example, graphite coating. In the example shown in FIG. 3, an endothermic coating 18 is applied to the outer peripheral surface of the crucible 10. A strip-shaped temperature measuring element 17 is wound near the bottom of the evaporation material storage portion 11 of the crucible 10. The temperature measurement element 17 measures the temperature near the bottom of the evaporation material storage portion 11 of the crucible 10.
【0025】他方、図4と図5は、副成分の蒸発材料b
を蒸発し、その分子を放出する第二の分子線源セル2を
示す断面図と側面図であり、図6はその上端部付近の分
解縦断側面図である。この坩堝20もまた、前記の坩堝
10と基本的に同じである。すなわち、坩堝20は、P
BN(パイロリティック・ボロン・ナイトライド)等か
らなる容器状のもので、前述した蒸発材料bを収納する
蒸発材料収納部21と、この蒸発材料収納部21より放
出口24側にあって、一部内径及び外形が細くなった括
れ部22と、この括れ部22から放出口24に至るテー
パガイド部23とを有する。On the other hand, FIG. 4 and FIG. 5 show the evaporation material b as a subcomponent.
FIG. 6 is a cross-sectional view and a side view showing a second molecular beam source cell 2 that evaporates and releases the molecules thereof, and FIG. 6 is an exploded vertical side view of the vicinity of the upper end portion thereof. This crucible 20 is also basically the same as the above-mentioned crucible 10. That is, the crucible 20 is P
The container is made of BN (pyrolytic boron nitride) or the like, and has an evaporation material storage portion 21 for storing the above-described evaporation material b and a discharge port 24 side from the evaporation material storage portion 21. A constricted portion 22 having a narrow inner diameter and an outer shape, and a taper guide portion 23 extending from the constricted portion 22 to the discharge port 24 are provided.
【0026】蒸発材料bを収納する蒸発材料収納部21
は、有底のほぼ円筒形であり、その上部の放出口24側
は先が細くなるようなテーパが形成され、その先に内径
が最も細くなった括れ部22を有する。この括れ部22
から先の放出口24に至る部分は、内径及び外形が次第
に広くなるようなテーパが形成されたテーパガイド部2
3となっている。このテーパガイド部23の先に放出口
24が開口している。Evaporation material storage section 21 for storing evaporation material b
Has a bottomed, substantially cylindrical shape, and a taper that tapers off is formed on the upper side of the discharge port 24 side, and has a constricted portion 22 with the smallest inner diameter at the tip. This constricted part 22
The portion from the tip to the outlet 24 has a taper guide portion 2 in which a taper is formed so that the inner diameter and the outer diameter gradually increase.
It is 3. A discharge port 24 opens at the tip of the taper guide portion 23.
【0027】但し、この副成分である蒸発材料bを蒸発
する坩堝20では、そのテーパガイド部23の部分にカ
ップ状の閉止部材31が嵌め込まれている。この閉止部
材31は、その外周に坩堝20のテーパガイド部23の
内周側テーパと同じテーパを有し、同テーパガイド部2
3の中に密に嵌め込まれている。さらに、このカップ状
の閉止部材31の底壁に幾つかの絞り孔32が開設され
ている。坩堝20の蒸発材料収納部21の内部は、この
閉止部材31の底壁に設けられた絞り孔32を介して放
出口24側に通じている。このような閉止部材31を使
用せずに、坩堝20の括れ部22の部分に、蒸発材料収
納部21の内部と放出口24側とを仕切る壁を設け、こ
の壁に絞り孔を設けてもよい。However, in the crucible 20 for evaporating the evaporation material b which is the accessory component, a cup-shaped closing member 31 is fitted in the portion of the taper guide portion 23. The closing member 31 has the same taper on the outer circumference as the inner circumference side taper of the taper guide portion 23 of the crucible 20.
It is tightly fitted in 3. Furthermore, several throttle holes 32 are opened in the bottom wall of the cup-shaped closing member 31. The inside of the evaporation material storage portion 21 of the crucible 20 communicates with the discharge port 24 side through a throttle hole 32 provided in the bottom wall of the closing member 31. Without using such a closing member 31, a wall for partitioning the inside of the evaporation material storage part 21 and the discharge port 24 side may be provided in the constricted part 22 of the crucible 20, and a throttle hole may be provided in this wall. Good.
【0028】この閉止部材31の内面と外面の少なくと
も何れかの面に熱吸収性が良好で、且つ化学的、熱的に
安定した塗装、例えばグラファイト塗装等の吸熱塗装2
8が施されている。図4及び図6に左側に示した閉止部
材31の例では、閉止部材31の内面に吸熱塗装28が
施されている。また、図6に右側に示した閉止部材31
の例のように、吸熱塗装28を施す代わりに、閉止部材
31そのものをグラファイト等のように熱吸収性が良好
で、且つ化学的、熱的に安定した吸熱材料で形成しても
よい。At least one of the inner surface and the outer surface of the closing member 31 is coated with good heat absorption and is chemically and thermally stable, for example, endothermic coating such as graphite coating 2
8 has been given. In the example of the closing member 31 shown on the left side in FIGS. 4 and 6, the endothermic coating 28 is applied to the inner surface of the closing member 31. Further, the closing member 31 shown on the right side in FIG.
Instead of applying the endothermic coating 28, as in the above example, the closing member 31 itself may be formed of an endothermic material such as graphite having a good heat absorbing property and being chemically and thermally stable.
【0029】この坩堝20は、二つのヒータ25、26
で囲まれている。第一のヒータ25は、坩堝20の蒸発
材料収納部21の周囲に配置され、その蒸発材料収納部
21を加熱する。この第一のヒータ25は、線状ヒータ
を坩堝20の縦方向に蛇行させると共に、坩堝20の外
周面を囲むように折り曲げられている。第二のヒータ2
6は、坩堝20の蒸発材料収納部21の上部から括れ部
22及びテーパガイド部23を経て放出口24に至る部
分の周囲に配置され、その部分を加熱すると共に、坩堝
20のテーパガイド部23を介して前記閉止部材31を
加熱する。この第二のヒータ26もまた、線状ヒータを
坩堝20の縦方向に蛇行させると共に、坩堝20の外周
面に沿って折り曲げられている。This crucible 20 has two heaters 25, 26.
It is surrounded by. The first heater 25 is arranged around the evaporation material storage part 21 of the crucible 20 and heats the evaporation material storage part 21. The first heater 25 has a linear heater meandering in the longitudinal direction of the crucible 20 and is bent so as to surround the outer peripheral surface of the crucible 20. Second heater 2
6 is arranged around a portion from the upper portion of the evaporation material storage portion 21 of the crucible 20 to the discharge port 24 through the constriction portion 22 and the taper guide portion 23, and heats the portion and the taper guide portion 23 of the crucible 20. The closing member 31 is heated via. The second heater 26 also has a linear heater meandering in the longitudinal direction of the crucible 20 and is bent along the outer peripheral surface of the crucible 20.
【0030】坩堝20の蒸発材料収納部21の底部近く
には、帯状の測温素子27が巻かれ、この測温素子27
により坩堝20の蒸発材料収納部21底部近くの温度が
測定される。これら第一の分子線源セル1の坩堝10と
第二の分子線源セル2の坩堝20には、そられの蒸発材
料収納部11、21に蒸発材料を収納する。この場合、
有機エレクトロルミネッセンス材料のような熱伝導性が
悪い材料を蒸発する場合は、本件特許出願人らの先の特
許出願(特願2001−192261号)において提案
したように、蒸発材料a、bと共に、熱的、化学的に安
定しており、且つ蒸発材料a、bより熱伝導率の高い伝
熱媒体を分散して収納する。或いは、粒状の伝熱媒体を
コアとして、その表面に蒸発材料a、bを被覆するよう
にして設け、これを坩堝10、20の蒸発材料収納部1
1、21の中に収納する。使用する伝熱媒体としては、
パイロリティック・ボロン・ナイトライド(PBN)、
シリコンカーバイト、窒化アルミニウム等の高熱伝導材
料からなるものが例示される。A strip-shaped temperature measuring element 27 is wound near the bottom of the evaporation material storage portion 21 of the crucible 20.
Thus, the temperature near the bottom of the evaporation material storage portion 21 of the crucible 20 is measured. In the crucible 10 of the first molecular beam source cell 1 and the crucible 20 of the second molecular beam source cell 2, the evaporation material is stored in the evaporation material storage portions 11 and 21, respectively. in this case,
In the case of evaporating a material having poor thermal conductivity such as an organic electroluminescent material, as proposed in the previous patent application by the present applicants (Japanese Patent Application No. 2001-192261), the evaporation materials a and b, A heat transfer medium that is thermally and chemically stable and has a higher thermal conductivity than the evaporation materials a and b is stored in a dispersed manner. Alternatively, a granular heat transfer medium is used as a core so that its surface is covered with evaporation materials a and b, and this is provided in the evaporation material storage unit 1 of the crucibles 10 and 20.
Store in 1, 21. The heat transfer medium used is
Pyrolytic Boron Nitride (PBN),
Examples thereof include those made of a high thermal conductive material such as silicon carbide and aluminum nitride.
【0031】図7は、このようにして前記の第一の分子
線源セル1の坩堝10の坩堝10の蒸発材料収納部11
に伝熱媒体と共に蒸発材料aを収納し、加熱した場合の
中心軸方向の温度分布と放出口14の径方向に沿った温
度分布を模式的に示している。もちろん真空中で、ヒー
タ15、16により坩堝10を加熱した場合のものであ
る。FIG. 7 shows the evaporation material storage portion 11 of the crucible 10 of the crucible 10 of the first molecular beam source cell 1 described above.
2 schematically shows the temperature distribution in the central axis direction and the temperature distribution in the radial direction of the discharge port 14 when the evaporation material a is stored together with the heat transfer medium and heated. Of course, this is a case where the crucible 10 is heated by the heaters 15 and 16 in a vacuum.
【0032】坩堝10の中心軸方向の温度分布について
は、吸熱塗装18を施した部分を第二のヒータ16で加
熱する部分の温度が高く、その温度は放出口14で最大
となる。伝熱媒体と共に蒸発材料aを収納した蒸発材料
収納部11の中心軸方向の温度分布はほぼ均一である。
また、坩堝10の放出口14の径方向の温度分布は、中
央でやや低いものの、概ね一定である。Regarding the temperature distribution in the central axis direction of the crucible 10, the temperature of the portion where the endothermic coating 18 is applied is heated by the second heater 16, and the temperature is maximum at the discharge port 14. The temperature distribution in the central axis direction of the evaporation material storage unit 11 that stores the evaporation material a together with the heat transfer medium is substantially uniform.
The temperature distribution in the radial direction of the discharge port 14 of the crucible 10 is slightly low in the center, but is almost constant.
【0033】例えば図1に示すように、前記第一と第二
の分子線源セル1、2は、それらの坩堝10、20の中
心軸が基板33の成膜面に垂直な線に対してそれぞれ1
5゜傾き、且つそれらの中心軸が基板33の中心で交差
するように配置する。既に述べた通り、前述のような分
子線源セル1、2では、坩堝10、20の放出口14、
24に近い先端側部分に括れ部12、22を有し、この
括れ部12、22から放出口14、24までも部分が内
径が次第に増大するテーパを形成したテーパガイド部1
3、23となっているため、蒸発材料収納部11、21
に収納された蒸発材料a、bが蒸発することにより発生
した分子のフラックスがテーパガイド部13、23に形
成されたテーパにより広がりながら放出される。これに
より、基板33の成膜面上に均一な膜厚の薄膜を形成す
ることができる。For example, as shown in FIG. 1, in the first and second molecular beam source cells 1 and 2, the central axes of the crucibles 10 and 20 are relative to a line perpendicular to the film formation surface of the substrate 33. 1 each
It is arranged so as to be inclined by 5 ° and their central axes intersect at the center of the substrate 33. As described above, in the molecular beam source cells 1 and 2 as described above, the emission ports 14 of the crucibles 10 and 20,
A tapered guide portion 1 having constricted portions 12 and 22 at a tip end side portion close to 24, and a portion from the constricted portions 12 and 22 to the discharge ports 14 and 24 having a taper whose inner diameter gradually increases.
3 and 23, the evaporation material storage units 11 and 21
The flux of molecules generated by the evaporation of the evaporation materials a and b stored in is discharged while being spread by the taper formed in the taper guide portions 13 and 23. Thereby, a thin film having a uniform film thickness can be formed on the film formation surface of the substrate 33.
【0034】さらに、ヒータ15、16、25、26
が、蒸発材料収納部11、21を加熱する第一のヒータ
15、25と、括れ部12、22からテーパガイド部1
3、23にわたる部分を加熱する第二のヒータ16、2
6とに分かれているため、それぞれの部分を最適な温度
に加熱することができる。特に、括れ部12、22から
テーパガイド部13、23にわたる部分を第二のヒータ
16、26で加熱するため、括れ部12、22での分子
の再凝縮が起こらない。Further, the heaters 15, 16, 25, 26
However, the first heaters 15 and 25 for heating the evaporation material storage portions 11 and 21, and the constricted portions 12 and 22 to the taper guide portion 1
Second heaters 16 and 2 for heating a portion extending over 3, 23
Since it is divided into 6, each part can be heated to an optimum temperature. In particular, since the portions extending from the constricted portions 12 and 22 to the taper guide portions 13 and 23 are heated by the second heaters 16 and 26, recondensation of molecules in the constricted portions 12 and 22 does not occur.
【0035】さらに、図1に示すように第一と第二の分
子線源セル1、2を組み合わせた複合的な分子線源セル
において、第二の分子線源セル2の坩堝20の放出口2
4からの蒸発材料bの分子の放出を制限する絞り孔32
を設けていることにより、第一の分子線源セル1から放
射される主成分の分子の量に比べて第二の分子線源セル
から放射される副成分の分子量が少なくなる。このた
め、第一の分子線源セル1から放射される主成分の分子
と第二の分子線源セルから放射される副成分の分子との
モル比を所要のモル比とすることができる。Further, as shown in FIG. 1, in the composite molecular beam source cell in which the first and second molecular beam source cells 1 and 2 are combined, the outlet of the crucible 20 of the second molecular beam source cell 2 is formed. Two
Restrictor 32 for limiting the release of molecules of the vaporized material b from
By providing, the molecular weight of the accessory component radiated from the second molecular beam source cell is smaller than the molecular weight of the main component molecule radiated from the first molecular beam source cell 1. Therefore, the molar ratio of the molecule of the main component radiated from the first molecular beam source cell 1 to the molecule of the subcomponent radiated from the second molecular beam source cell can be set to a required molar ratio.
【0036】[0036]
【発明の効果】以上説明した通り、本発明による薄膜堆
積用分子線源セルでは、有機EL材料のような高分子で
あって熱伝導率の低い蒸発材料でも、熱損傷を与えるこ
となく、坩堝の中で効率良く伝熱でき、これにより坩堝
の中での温度勾配を小さくし、蒸発材料を効率よく蒸発
して蒸発分子を発生することができるようにすることが
出来る。さらに、膜を形成する主成分の他に、ドーパン
トのような微量成分である副成分も基板に向けて同時に
放出し、反応蒸着を可能となる。加えて、均一な膜厚の
成膜が可能である。As described above, in the molecular beam source cell for thin film deposition according to the present invention, even a polymer such as an organic EL material having a low thermal conductivity can be evaporated without causing thermal damage to the crucible. It is possible to efficiently transfer heat within the crucible, thereby reducing the temperature gradient in the crucible, and efficiently evaporating the evaporation material to generate evaporation molecules. Further, in addition to the main component forming the film, a minor component such as a dopant, which is a minor component, is simultaneously released toward the substrate, and reactive vapor deposition becomes possible. In addition, it is possible to form a film having a uniform film thickness.
【図1】本発明の一実施形態による複合的な薄膜堆積用
分子線源セルの配置の例を示す概略縦断側面図である。FIG. 1 is a schematic vertical sectional side view showing an example of arrangement of a composite molecular beam source cell for thin film deposition according to an embodiment of the present invention.
【図2】同実施形態による薄膜堆積用分子線源セルの主
成分蒸発用の分子線源セルの例を示す蒸発材料を収納し
てない状態の縦断側面図である。FIG. 2 is a vertical cross-sectional side view showing an example of a molecular beam source cell for main component evaporation of a thin film deposition molecular beam source cell according to the same embodiment in a state in which an evaporation material is not housed.
【図3】同主成分蒸発用の分子線源セルの例を示す側面
図である。FIG. 3 is a side view showing an example of a molecular beam source cell for vaporizing the main component.
【図4】同実施形態による薄膜堆積用分子線源セルの副
成分蒸発用の分子線源セルの例を示す蒸発材料を収納し
てない状態の縦断側面図である。FIG. 4 is a vertical cross-sectional side view showing an example of a molecular beam source cell for sub-component evaporation of a thin film deposition molecular beam source cell according to the same embodiment in a state in which an evaporation material is not housed.
【図5】同副成分蒸発用の分子線源セルの例を示す側面
図である。FIG. 5 is a side view showing an example of a molecular beam source cell for vaporizing the accessory component.
【図6】同副成分蒸発用の分子線源セルの例を示す要部
拡大分解縦断側面図である。FIG. 6 is an enlarged exploded vertical cross-sectional side view of an essential part showing an example of a molecular beam source cell for vaporizing the accessory component.
【図7】同実施形態による薄膜堆積用分子線源セルの主
成分蒸発用の分子線源セルの例の坩堝の温度分布を示す
模式図である。FIG. 7 is a schematic diagram showing a temperature distribution in a crucible of an example of a molecular beam source cell for evaporating a main component of a thin film deposition molecular beam source cell according to the same embodiment.
【図8】薄膜堆積用分子線源セルの従来例を示す縦断側
面図である。FIG. 8 is a vertical sectional side view showing a conventional example of a molecular beam source cell for thin film deposition.
【図9】薄膜堆積用分子線源セルの従来例の坩堝の温度
分布を示す模式図である。FIG. 9 is a schematic diagram showing a temperature distribution in a crucible of a conventional example of a molecular beam source cell for thin film deposition.
1 第一の分子線源セル 2 第二の分子線源セル 10 第一の分子線源セルの坩堝 11 第一の分子線源セルの坩堝の蒸発材料収納部 12 第一の分子線源セルの坩堝の括れ部 13 第一の分子線源セルの坩堝のテーパガイド部 14 第一の分子線源セルの坩堝の放出口 15 第一の分子線源セルの第一のヒータ 16 第一の分子線源セルの第二のヒータ 17 第一の分子線源セルの坩堝の測温素子 18 第一の分子線源セルの坩堝の吸熱塗装 20 第二の分子線源セルの坩堝 21 第二の分子線源セルの坩堝の蒸発材料収納部 22 第二の分子線源セルの坩堝の括れ部 23 第二の分子線源セルの坩堝のテーパガイド部 24 第二の分子線源セルの坩堝の放出口 25 第二の分子線源セルの第一のヒータ 26 第二の分子線源セルの第二のヒータ 27 第二の分子線源セルの坩堝の測温素子 28 第二の分子線源セルの坩堝の閉止部材の吸熱塗装 31 第二の分子線源セルの坩堝の閉止部材 32 第二の分子線源セルの坩堝の絞り孔 a 第一の分子線源セルの蒸発材料 b 第二の分子線源セルの蒸発材料 1 First molecular beam source cell 2 Second molecular beam source cell 10 Crucible of the first molecular beam source cell 11 Evaporation material storage section of crucible of first molecular beam source cell 12 Constriction part of the crucible of the first molecular beam source cell 13 Tapered guide part of crucible of first molecular beam source cell 14 First molecular beam source cell crucible outlet 15 First heater of first molecular beam source cell 16 Second heater of first molecular beam source cell 17 Temperature measuring element of crucible of first molecular beam source cell 18 Endothermic coating of the crucible of the first molecular beam source cell 20 Crucible of the second molecular beam source cell 21 Evaporation material storage section of crucible of second molecular beam source cell 22 Constriction of crucible of second molecular beam source cell 23 Tapered guide of crucible of second molecular beam source cell 24 Crucible outlet of the second molecular beam source cell 25 First heater of second molecular beam source cell 26 Second Heater of Second Molecular Beam Source Cell 27 Temperature measuring element of crucible of second molecular beam source cell 28 Endothermic coating of the closing member of the crucible of the second molecular beam source cell 31 Closing member for crucible of second molecular beam source cell 32 Constriction hole in crucible of second molecular beam source cell a Evaporation material for the first molecular beam source cell b Evaporation material for the second molecular beam source cell
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成13年9月20日(2001.9.2
0)[Submission date] September 20, 2001 (2001.9.2)
0)
【手続補正1】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】請求項3[Name of item to be corrected] Claim 3
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
Claims (7)
発材料(a)、(b)を坩堝(10)、(20)の周囲
に配置したヒータ(15)、(16)、(25)、(2
6)で加熱して蒸発し、その分子を放出口(14)、
(24)から放出し、基板(33)の成膜面上に堆積さ
せて薄膜を形成する薄膜堆積用分子線源セルにおいて、
坩堝(10)、(20)の蒸発材料(a)、(b)を収
納するボトムに近い側の蒸発材料収納部(11)、(2
1)が円筒形であり、放出口(14)、(24)に近い
先端側部分に括れ部(12)、(22)を有し、この括
れ部(12)、(22)から放出口(14)、(24)
までの部分が次第に内径が増大するテーパを有するテー
パガイド部(13)、(23)となっており、ヒータ
(15)、(16)、(25)、(26)が、蒸発材料
収納部(11)、(21)を加熱する第一のヒータ(1
5)、(25)と、括れ部(12)、(22)からテー
パガイド部(13)、(23)にわたる部分を加熱する
第二のヒータ(16)、(26)とに分かれていること
を特徴とする薄膜堆積用分子線源セル。1. Heaters (15), (16), (16) in which evaporation materials (a), (b) housed in crucibles (10), (20) are arranged around the crucibles (10), (20). 25), (2
6) is heated and evaporated to release the molecule from the emission port (14),
In the molecular beam source cell for thin film deposition, which emits from (24) and is deposited on the film formation surface of the substrate (33) to form a thin film,
Evaporation material storage parts (11), (2) near the bottom for storing the evaporation materials (a), (b) of the crucibles (10), (20).
1) has a cylindrical shape, and has constricted portions (12) and (22) on the tip side portion near the ejection openings (14) and (24). 14), (24)
The parts up to are taper guide parts (13) and (23) having a taper whose inner diameter gradually increases, and the heaters (15), (16), (25) and (26) are the evaporation material storage parts ( 11), the first heater (1) for heating (21)
5) and (25) and second heaters (16) and (26) for heating the portions extending from the constricted portions (12) and (22) to the taper guide portions (13) and (23). A molecular beam source cell for thin film deposition, characterized by:
分となる蒸発材料(a)を収納する坩堝(10)を備え
る第一の分子線源セル(1)と、基板(33)の成膜面
に堆積させる副成分となる蒸発材料(b)を収納する坩
堝(20)を備える第二の分子線源セル(2)とを組み
合わせたたことを特徴とする請求項1に記載の薄膜堆積
用分子線源セル。2. A first molecular beam source cell (1) comprising a crucible (10) containing an evaporation material (a) as a main component to be deposited on a film forming surface of a substrate (33), and a substrate (33). The second molecular beam source cell (2) provided with a crucible (20) containing an evaporation material (b) which is an accessory component to be deposited on the film-forming surface of (1), in combination with the second molecular beam source cell (2) according to claim 1. Molecular beam source cell for thin-film deposition.
0)は、蒸発材料収納部(11)の上端部分から括れ部
(12)及びテーパガイド部(13)を経て放出口(1
4)に至る部分に熱吸収性の吸熱塗装(18)が施して
あることを特徴とする請求項1または3に記載の薄膜堆
積用分子線源セル。3. A crucible (1) of a first molecular beam source cell (1)
0) is a discharge port (1) from the upper end of the evaporation material storage section (11) through the constriction section (12) and the taper guide section (13).
The molecular beam source cell for thin film deposition according to claim 1 or 3, wherein a heat absorbing coating (18) is applied to a portion up to 4).
(20)の放出口(24)から蒸発材料(b)の分子の
放出を制限する絞り孔(32)を有することを特徴とす
る請求項1〜3の何れかに記載の薄膜堆積用分子線源セ
ル。4. The second molecular beam source cell (2) has a restriction hole (32) for restricting the emission of molecules of the evaporation material (b) from the emission port (24) of the crucible (20). The molecular beam source cell for thin film deposition according to any one of claims 1 to 3.
0)の絞り孔(32)は、坩堝(20)のテーパガイド
部(23)の内周側テーパと同じテーパを有し、同テー
パガイド部(23)の中に嵌め込まれたカップ状の閉止
部材(31)の底壁に開設されていることを特徴とする
請求項4に記載の薄膜堆積用分子線源セル。5. The crucible (2) of the second molecular beam source cell (2).
The throttle hole (32) of (0) has the same taper as the inner peripheral side taper of the taper guide part (23) of the crucible (20), and is a cup-shaped closure fitted in the taper guide part (23). The molecular beam source cell for thin film deposition according to claim 4, which is provided on a bottom wall of the member (31).
0)は、そのテーパガイド部(23)の内側に嵌め込ま
れたカップ状の閉止部材(31)に熱吸収性の吸熱塗装
(28)が施してあるか、或いはカップ状の閉止部材
(31)が熱吸収性の吸熱材料からなることを特徴とす
る請求項5に記載の薄膜堆積用分子線源セル。6. The crucible (2) of the second molecular beam source cell (2).
0) has a cup-shaped closing member (31) fitted inside the taper guide portion (23) coated with a heat-absorbing endothermic coating (28) or has a cup-shaped closing member (31). 6. The molecular beam source cell for thin film deposition according to claim 5, characterized in that is made of a heat absorbing material.
料収納部(11)、(21)の底部側に巻いた測温素子
(17)、(27)により温度が測定されることを特徴
とする請求項1〜6の何れかに記載の薄膜堆積用分子線
源セル。7. The temperature of the crucibles (10), (20) is measured by temperature measuring elements (17), (27) wound around the bottoms of the evaporation material storage sections (11), (21). The molecular beam source cell for thin film deposition according to any one of claims 1 to 6.
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|---|---|---|---|
| JP2001219172A JP3616586B2 (en) | 2001-07-19 | 2001-07-19 | Molecular beam source cell for thin film deposition |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001219172A JP3616586B2 (en) | 2001-07-19 | 2001-07-19 | Molecular beam source cell for thin film deposition |
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| Publication Number | Publication Date |
|---|---|
| JP2003034591A true JP2003034591A (en) | 2003-02-07 |
| JP3616586B2 JP3616586B2 (en) | 2005-02-02 |
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