HK1098514B - A molecular beam source for use in accumulation of organic thin-film - Google Patents

Description

Stacked molecular beam source for organic thin films

Technical Field

The present invention relates to a molecular beam source for deposition (accumulation) of an organic thin film for heating a material to be formed in a thin film form on a surface of a solid object or substance such as a substrate or the like, thereby melting and evaporating the thin film forming material; i.e., generating vaporized molecules to grow a thin film on the surface of a solid object, and more particularly, to a molecular beam source for deposition of a thin film of an organic material, which is suitable for use in depositing a thin film of an organic material on a thin film forming surface of a solid object such as a substrate or the like.

Background

In recent years, attention has been paid to organic thin film elements such as organic electroluminescence (i.e., EL) and/or organic semiconductors as typical or representative members thereof. For such a thin film element, the organic material is heated in vacuum to eject vapor onto the surface of the substrate, and then allowed to cool; whereby it is cured or bonded thereto. A method is generally used in which an organic material is placed in a furnace or crucible made of a material having a high melting point such as tungsten, and then the material to be formed into a thin film is heated by heating the periphery of the crucible by means of a heater; thereby generating a vapor to be sprayed on the substrate.

However, since almost all organic materials, i.e., film-forming materials, are poor, especially in thermal conductivity, it is impossible to uniformly heat the film-forming materials by means of the evaporation device as mentioned above, and therefore there arises a disadvantage that it results in non-uniformity or inconsistency in vapor generation. It is also clear that such drawbacks can cause greater problems, particularly if attempts are made to place large quantities of organic material in the crucible.

Then, as described in patent document 1 below, it is proposed to put a thermally and chemically stable material and a material that is also significantly superior in thermal conductivity to the film-forming material into a crucible together with the film-forming material, thereby solving the above-mentioned drawbacks.

In addition, as another defect concerning the evaporation means of the film-forming material, there are also pointed out a cachexia; that is, since the organic film-forming material may generate vapor under an environment of high evaporation pressure and low temperature, vapor of the film-forming material may be unintentionally or unexpectedly generated as long as the material is put into a crucible and set in a vacuum, thereby causing contamination of the substrate. In order to cope with such a drawback mentioned above, as described in patent document 2 below, an idea is proposed that adjusts the amount of vapor by a needle valve while making the crucible structurally a closed type.

Patent document 1: japanese patent laid-open No. 2003-2778; and

patent document 2: japanese patent laid-open No. 2003-95787.

Disclosure of Invention

From the studies conducted by the present inventors, it was found that it is possible to uniformly generate vapor by putting a material superior in thermal conductivity to the film-forming material into the crucible together with the film-forming material. However, it has also been found that if an attempt is made to form a thin film of an organic material uniformly or homogeneously on the film-formation surface of a large-sized substrate, a large interval must be employed between the evaporation source and the substrate, and therefore, it greatly impairs or reduces the efficiency of material use. Also, by interrupting the opening for discharging molecules by means of, for example, a needle valve, is also a good method for achieving control of discharge/clogging of the evaporated material, however, as the opening for releasing molecules, it is too narrow, i.e., close to a point shape, and therefore it also brings about a drawback that it cannot be applied to form a uniform thin film on the film formation surface of a large-sized substrate.

Also, the organic film-forming material has a high vaporization pressure, which generates vapor at a low temperature. (ii) a However, it can easily re-solidify as the temperature decreases. For this reason, when the vapor of the film-forming material comes into contact with the wall surface adjacent to the opening for releasing molecules and the temperature falls, then the organic film-forming material is separated or deposited on the wall surface. As a result of this, the opening for releasing the molecules is narrowed or it is blocked; thereby, the efficiency of forming a film on the substrate is reduced or a detrimental effect is brought about on the film formation. In addition to these, the organic film-forming material that re-condenses or solidifies near the opening for releasing molecules falls off as a sheet from the wall surface, but floats and scatters in a vacuum space under a powdery environment; i.e., increases the probability of its adhesion to the surface of the film on which the film is to be formed.

According to the present invention, it is achieved by taking into consideration the drawbacks possessed with respect to the above-mentioned conventional molecular beam source for depositing an organic thin film, in particular, by studying the structure of the portion which releases molecules, in particular, the opening of the released molecules, and as a result thereof, an object is to provide a molecular beam source for depositing an organic thin film which is capable of forming a uniform thin film on the film-formation surface of a large-sized substrate and also capable of preventing the film-formation material from being detached or deposited at the opening which releases the molecules of the film-formation material, thereby hardly causing narrowing and/or clogging at the opening for releasing.

In order to achieve the above-mentioned object, according to the present invention, there is first provided a molecular beam source for depositing an organic thin film, in particular, for evaporating an organic material, comprising: a vapor generation source; an outer guide having a tapered guide wall on a side of an opening for releasing molecules of a film-forming material generated in the vapor generation source toward a film-forming surface; an inner guide member disposed inside the outer guide member and having a tapered guide wall; a molecule release passage formed between the outer guide and the inner guide, having a tapered shape with a diameter therein, which gradually increases in a direction in which molecules are released. Heaters are provided in the outer and inner guides, respectively, thereby forming heaters inside and outside the molecule release channel.

With such a molecular beam source in which the heater is disposed at the molecule release opening where the vapor is easily recondensed, the vaporized material is prevented from being separated or deposited in the vicinity of the molecule release opening, and narrowing and/or clogging due to recondensation or separation of the vapor hardly occurs at the opening where the molecules are released. This enables stable release of the vapor.

Further, according to the present invention, the molecular beam source is provided with a heater as mentioned above, and further comprises a heater disposed through the molecular release passage, adjacent to the member for supporting the outer guide and the inner guide; thus, re-condensation or solidification of the vapor on the support member passing through the molecule release passage can be prevented from being caused. In this way, the molecular release channel can also be protected from narrowing and/or clogging, in particular in the part thereof immediately up to the molecular release opening.

Further, according to the present invention, the molecular beam source is provided with a heater as mentioned above, and further comprises a valve provided on a path from said vapor generation source to said molecular release opening for releasing molecules of the film-forming material generated at said vapor generation source to the film-forming surface; thus by closing the valve at the beginning of the evaporation, the material can be heated without leaking vapour. For this reason, the pressure can be easily kept stable at an equilibrium pressure depending on the material temperature on the side of the vapor generation source. In this case, a substantially uniform or even pressure may be maintained on the side of the vapor-generating source.

However, according to the present invention, the heater is provided in the molecular beam source as mentioned above, the heater provided at the side of the molecular release opening has a winding density, which is dense or crowded as compared with the heater provided at the side of the vapor generation source. In doing so, it is ensured that the vapor is prevented from recondensing or solidifying at the molecule release opening.

Further, according to the present invention, a heater is provided in the molecular beam source as mentioned above, and the inner guide and the outer guide are made movable relative to each other in a direction directed to the film formation surface. Thus, the opening portion of the molecule release opening can be adjusted to be wide or narrow. Further, since the center position of the opening of the molecule release opening can be changed, the release condition of the molecule can be arbitrarily determined depending on, for example, the size of the region of the film formation surface on which the thin film is to be formed.

Drawings

These and other objects, features and advantages of the present invention will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings, in which:

fig. 1 is a vertical cross-sectional view illustrating an embodiment of a molecular beam source for stacking an organic thin film according to an embodiment of the present invention;

FIG. 2 is a front view of the above-mentioned molecular beam source for depositing an organic thin film;

fig. 3 is an enlarged vertical sectional view showing a main part of the above-mentioned molecular beam source for depositing an organic thin film, including a molecular releasing portion and a cooling/heating portion provided at the outside thereof;

FIG. 4 is an enlarged vertical sectional view showing the principal part, particularly, in the case of when a film is formed on a substrate by the above-mentioned molecular beam source for accumulating an organic thin film;

fig. 5 is an enlarged vertical sectional view showing the main portion, particularly, in the case when the inner guide is changed from the position shown in fig. 4 above to a position at which a film is formed on the substrate;

FIG. 6 is a vertical sectional view showing that a heating material is contained in a crucible of the molecular beam source for depositing an organic thin film mentioned above;

FIG. 7 is a graph showing the temperature at the side of the molecule heating chamber and also at the side of the molecule emitting opening when the molecules are emitted, wherein the heater is provided not only at the side of the molecule heating chamber but also at the side of the molecule emitting opening in the above-mentioned molecular beam source for accumulating the organic thin film; and

fig. 8 is also a diagram showing the temperatures at the side of the molecule heating chamber and at the side of the molecule emitting opening when the molecules are emitted, wherein the heater is provided not only at the side of the molecule heating chamber but also at the side of the molecule emitting opening in the above-mentioned molecular beam source for accumulating the organic thin film.

Detailed Description

According to the invention, a valve is arranged in the path of the vapor, thereby enabling the closing of the released vapor. Moreover, the heater is disposed on the side of the molecule release opening where the vapor is easily condensed or solidified; thereby preventing the vaporized material from separating or depositing near the molecular release opening.

Hereinafter, embodiments according to the present invention will be fully explained with reference to the accompanying drawings.

Fig. 1 shows a molecular beam source emission region 1 in which an emission film forming material "a" is formed by sublimation or evaporation.

The heating material containing portion 3 of the molecular beam source emitting region 1 has a cylindrical vapor generation source 31 made of a metal such as SUS or the like, i.e., a material having high thermal conductivity, and a heating material "a" to be heated is contained in the crucible 31. As shown in fig. 6, this heating material "a" has a coating layer of a film-forming material "b" as a main component of the film on the surface of the core, i.e., the granular heat conducting or heat transporting medium "c". Thus, the heating material "a" is contained in the crucible 31 of the above-described heating material containing portion 3.

Further, instead of (in the place) coating the film-forming material "b" with the heat transfer medium "c", the film-forming material "b" and the heat transfer medium "c" may be accommodated in the crucible 31 of the heating material accommodating section 3, with being uniformly mixed or combined in an appropriate ratio. For example, the volume ratio between the film-forming material "b" and the heat conveyance medium "c" contained therein is preferably 70% to 30% or less.

The heat conveyance medium "c" is thermally and chemically stable, and it is made of a material having a higher thermal conductivity than that of the film formation material "b". For example, the heat transport medium "c" is made of a high heat transport material such as thermally cracked boron nitride PBN, silicon carbide, or aluminum nitride, or the like.

As shown in fig. 1, a heater 32 is provided around the crucible 31, and the outer periphery thereof is surrounded by a shield 39 cooled using liquid nitrogen or the like. By means of a temperature measuring device (not shown in the drawings), such as a thermocouple or the like, which is provided on the crucible 31, for example, the heat generation value or the heat amount of the heater 32 is controlled, the film-forming material "b" contained in the crucible 31 is sublimated or evaporated by heating the heating material "a" in the crucible 31; thereby producing a molecule. Further, when the heater 32 stops generating heat, the inside of the crucible is caused to cool by means of the shield 39, whereupon the heating material "a" is cooled, and at the same time, sublimation and evaporation of the film-forming material are stopped.

Upon heating, the film-forming material "b" is heated by the heat conveyance medium "c". Since the heat transfer medium "c" is higher in thermal conductivity than the film-formation material "b", even in the case where heat cannot reach the center of the crucible 31 if the crucible contains only the film-formation material "b", the heat is transferred or propagated to the center of the crucible 31 with the aid of the heat transfer medium "c", and then the film-formation material "b" disposed at the center of the crucible 31 is heated to be melted and/or evaporated. In doing so, the film-forming material "b" contained in the crucible 31 can be completely or uniformly heated, melted, and evaporated.

Further, since the heat transfer medium "c" is made of a thermally and chemically stable material such as pyrolytic boron nitride PBN, silicon carbide, or aluminum nitride, etc., the heat transfer medium "c" does not melt or evaporate when heated by the heater 32 to such an extent that the film formation material "b" is evaporated. Therefore, molecules of the heat transfer medium "c" are not contained in the vapor molecules emitted from the vapor release opening 2 of the crucible 31, and therefore, it does not have a harmful influence on the composition of the film on which the crystal is grown.

However, in the case where the film-forming material "b" is an organic low-molecular material or an organic polymer material having an electroluminescence effect or capability, the evaporation temperature thereof is low as compared with a metal such as copper or the like; almost all of them are equal to or lower than 200 ℃. On the other hand, the heat-resistant temperature thereof is also relatively low, and therefore it is necessary to heat at a temperature equal to or higher than the vaporization temperature thereof and also equal to or lower than the heat-resistant temperature thereof in order to obtain vaporization of such organic low-molecular or organic polymer as mentioned above.

The valve 33 is provided at the side where molecules of the film-forming material are released from the crucible 31. The valve 33, a so-called needle valve, has a sharp needle portion 34 and a valve seat 35 comprising a molecule passing opening through the tip of an inserted needle portion 34, which can be closed or blocked or narrowed over the cross-sectional area of its flow channel. The needle portion 34 mentioned above is moved in the direction of its central axis by a linear movement, which is introduced through a bellows 37 with the aid of a servomotor 36.

As shown in fig. 1, the molecules communicate or conduct with the molecule discharging portion 11 through the guide passage 21 through the opening of the valve seat 35, which can be opened or closed by the valve 33. The molecule discharging part 11 has a cylindrical molecule heating chamber 12, and a heater 15 is provided around the molecule heating chamber 12. The molecule heating chamber 12 communicates with the above-mentioned valve 33 through the guide passage 21 for guiding or introducing the evaporated molecules into the molecule heating chamber 12. Molecules of the film-forming material leak from the above-mentioned side of the valve 33 and reach the molecule discharging portion 11 through the guide passage 21, and then, it is heated again, heated to a desired temperature by the heater 15 in the molecule heating chamber 12, and emitted from the molecule discharging opening 14 toward the substrate disposed in the vacuum chamber or the vacuum container.

Fig. 2 and 3 show details of the molecular release 11 at the tip of the molecular beam source emission region 1.

Between the molecule release opening 14 and the peripheral portion of the top end of the molecule heating chamber 12, an outer guide 13 is provided. The inner surface of the outer guide 13 defines a tapered guide surface whose diameter becomes gradually larger in a direction from the top end peripheral side of the molecule heating chamber 12 to the molecule release opening 14.

Further, an inner guide 16 is provided in the outer guide 13. As shown in fig. 3, the outer surface of the inner guide member 16 also defines a guide surface having the same slope or slope as the inner guide surface of the outer guide member 13 mentioned above; that is, the guide surface is also formed into a tapered shape whose diameter becomes gradually larger in a direction from the top end peripheral side of the molecule heating chamber 12 to the molecule release opening 14. A molecule release channel 17 extending from the top peripheral side of the molecule heating chamber 12 to the molecule release opening 14 is defined between the guide surface of the inner guide 16 and the guide surface of the outer guide 13.

The struts 23 are inserted at 45 deg. intervals in the radial direction into the molecule release channel 17 defined between the inner guide 16 and the outer guide 13. Each of the struts 23 of the embodiment shown in the figures is composed of two plate-like components which are arranged on the inner guide 16 and the outer guide 13 at a distance apart in the circumferential direction. Screws 24 are inserted into the posts 23 and the posts 23 are secured to the inner guide 16 and outer guide 13 by means of the screws 24. By means of such a support structure of the support member, which mainly includes these posts 23 and screws 24, etc., the inner guide 16 and the outer guide 13 are mounted to the central shaft to be arranged concentrically with each other and fixed to each other.

The inner guide 16 can be moved toward the outer guide 13 and fixed at an arbitrary position in a direction toward the film formation surface of the substrate on which the thin film is to be formed. The direction in which the inner guide 16 is movable is the vertical direction (or up-down direction) in fig. 3. The position of the inner guide 16, which is shown by the two-dot chain line in fig. 3, shows the situation when it is moved backward to recede from the position of the inner guide 16 shown by the solid line to the side of the molecule releasing part 11. When the inner guide piece 16 is located at the position shown by the solid line, the tapered guide surface of the inner guide piece 16 is closer to the other guide surface, i.e., the inner surface of the outer guide piece 13, than the position shown by the two-dot chain line; therefore, the molecule release channel 17 becomes narrow. Figure 4 shows the inner guide 16 in the position shown by the solid lines in figure 3. Also, figure 5 illustrates the inner guide 16 when in the position shown by the two-dot dashed line in figure 3. In this manner, the inner guide member 16 is movable in the vertical direction in FIG. 3, and it may be fixed in any position.

Outside the outer guide 13, there is provided a cooling/heating part 21 including a heater 18 and a cooler 22, and the outer guide 13 is surrounded by the cooling/heating part 21. The cooler 22 of the cooling/heating part 21 cools or cools the outer guide 13 from the surroundings by using a refrigerant liquid such as water or liquid nitrogen or the like. Also, the heater 18 of the cooling/heating means 21 heats the outer guide 13 from the periphery using, for example, a micro-heater therein, thereby heating the molecule release channel 17 provided inside thereof. The density of the heat generation amount of the heater 18 of the cooling/heating unit 21, i.e., the amount of heat generated per unit area, is set to be larger than the heat generation density of the heater 15 disposed at the periphery of the molecular heating chamber 12. For this reason, the winding density of the heater 18 is denser or denser than that of the heater 15 in the molecular heating chamber 12.

Further, a heater 19 is installed in the inner guide 16. The heater 19 also heats the inner lead 16 from the inside using, for example, a micro-heater therein, thereby heating the molecule release channel 17 disposed outside thereof. The density of the heat generation amount of the heater 19 of the inner guide 16, that is, the amount of heat generation amount per unit area is set to be larger than the heat generation density of the heater 15 provided at the periphery of the molecule heating chamber 12. For this reason, the winding density of the heater 19 is denser or denser than that of the heater 15 in the molecular heating chamber 12.

In the molecule release channel 17 disposed between the outer guide 13 and the inner guide 16, a heater 20 is disposed or connected therethrough. The heater 20, in the case where the above-mentioned screw is inserted into the post 23 while it is also inserted into the post 23, i.e., it approaches the post 23 and the screw 24 therein, penetrates the molecule release channel 17. Since the heater 20 extends through the molecule release channel 17, it is suitable to use the heater's midline to connect between the external heater 18 and the internal heater 19, however, the heater 20 may be independent, separate from those heaters 18, 19.

In this manner, except that heaters 18 and 19 are again disposed near the molecular release openings where the vapor readily recondenses or solidifies; that is, in more detail, outside and inside the molecule releasing channel 17, heaters 20 penetrating the molecule releasing channel 17 are also provided, thereby ensuring that the evaporated material is prevented from being deposited or separated in the vicinity of the molecule releasing opening 14. With this, narrowing and/or clogging at the molecular release opening due to recondensation or solidification of the vapor hardly occurs. In particular, since the heater 20 penetrates the molecule release passage 17 in the case where a screw is inserted into the support 23 while it is also inserted into the support 23, it is possible to surely prevent recondensation or solidification of vapor on the support member such as the support 23, the screw 24, or the like provided to penetrate the molecule release passage 17.

Fig. 7 and 8 show results obtained by measuring the temperature of the wall surface of the inner guide 16 when heating the molecule release passage 17, and in experiments or experiments of actual molecule release, there are a heater 18 on the side of the outer guide 13 and a heater 19 on the side of the inner guide 16 in addition to the heater 15 on the side of the molecule heating chamber 12. In particular, fig. 7 shows the result of measurement performed on the tip side of the wall surface of the inner guide 16 near the molecule release opening 14 as a temperature measurement point. And, fig. 8 shows the result of measurement, which is performed at the base of the column near the molecule heating chamber 12 as a temperature measurement point. The measurement is performed by heating the side of the molecule heating chamber 12 by means of the heater 15 while changing the wall surface temperature of the molecule heating chamber 12 within the range of 200 ℃ to 400 ℃. In those cases involving no heater 18 provided on the side of the outer guide 13 and no heater 19 provided on the side of the inner guide 16, measurements were made using several heaters of different winding densities as heaters on the sides of the molecule release openings 14. The winding density of heaters 18 and 19 is shown in terms of the ratio of each pair of heaters 15 on the side of the molecular heating chamber 12.

Since the support members used to secure the outer guide 13 and inner guide 16 face or confront the outside of the molecule release, they are susceptible to cooling due to radiation. For this reason, when molecules of the film-forming material released from the molecule release opening 14 approach or contact the outer guide 13 and/or the inner guide 16, they are liable to be condensed or cured again due to heat absorption.

Thus, a heater 18 provided at the side of the outer guide 13 is provided, which has a winding density four or more times that of the heater 15 at the side of the molecular heating chamber 12; the wall surface temperature of the inner guide 16 can be brought to a temperature close to that of the molecule heating chamber 12. Further, a heater 19 is provided on the side of the outer guide 16, and the winding density of both is made twelve times that of the heater 15 on the side of the molecule heating chamber 12; the temperature of the wall surface of the inner guide 16 can be maintained at or above the temperature of the molecule heating chamber 12. In addition, the heater 20 is inserted into the support 23 together with the screw 24, penetrating the molecule release channel 17; thus, support members such as posts 23 and screws 24, etc., disposed through the molecular release channel 17, may also be maintained, particularly at a temperature similar thereto.

As fully discussed above, according to the molecular beam source for depositing an organic thin film, it is possible to prevent the vapor generation source from accidentally releasing vapor, thereby enabling the vapor to be released under stable and constant conditions, and therefore, it is possible to stably form a thin film on the film formation surface of the substrate. Thus, a uniform thin film can be formed even on a large-sized substrate. Further, with the heater provided on the side of the vapor release opening, it is possible to prevent recondensation or solidification of the vapor of the film-forming material, resulting in deposition or separation of the film-forming material at the vapor release opening. In this way, little narrowing and/or blockage occurs at the molecular release opening; therefore, the molecule can be released stably for a long period of time. And, a film can be stably formed.

The present invention may be embodied in other specific forms without departing from its spirit or essential characteristics or characteristics. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all equivalents thereof are intended to be embraced therein.

Claims (28)

1. A molecular beam source for depositing organic thin films for evaporating organic materials, comprising:

a vapor generation source;

a molecule release opening that releases molecules of a film-forming material, which is generated in the vapor generation source, toward a film-forming surface;

an outer guide having a tapered guide surface defined by an inner surface of the outer guide at a side of a molecule release opening, the tapered guide surface of the outer guide having a diameter gradually increasing in a direction in which molecules are released;

an inner guide disposed inside the outer guide and having a tapered guide surface defined by an outer surface of the inner guide, the tapered guide surface of the inner guide having a diameter that gradually increases in a direction in which molecules are released;

a molecule release channel formed between the guide surface of the outer guide and the guide surface of the inner guide and extending to a molecule release opening; and

a heater disposed at a side of the molecule release opening for heating vapor particles of the film forming material to be released.

2. The molecular beam source for depositing an organic thin film as claimed in claim 1, further comprising a valve disposed on a path from said vapor generation source to said molecular release opening for releasing molecules of a film formation material generated at said vapor generation source to a film formation surface.

3. The molecular beam source for stacking organic thin films as claimed in claim 1, wherein the inner guide and the outer guide are movable relative to each other in a direction directed to the film formation surface.

4. The molecular beam source for stacking organic thin films as claimed in claim 2, wherein the inner guide and the outer guide are movable relative to each other in a direction directed to the film formation surface.

5. The molecular beam source for stacking organic thin films as claimed in claim 1, wherein the heaters are respectively provided in the outer guide and the inner guide.

6. The molecular beam source for stacking organic thin films as claimed in claim 2, wherein the heaters are respectively provided in the outer guide and the inner guide.

7. The molecular beam source for stacking organic thin films as claimed in claim 3, wherein the heaters are respectively provided in the outer guide and the inner guide.

8. The molecular beam source for stacking organic thin films as claimed in claim 4, wherein the heaters are respectively provided in the outer guide and the inner guide.

9. The molecular beam source for stacking organic thin films as claimed in claim 1, further comprising a heater disposed through said molecular release channel adjacent to the means for supporting said outer guide and said inner guide.

10. The molecular beam source for stacking organic thin films as claimed in claim 2, further comprising a heater disposed through the molecular release channel adjacent to the means for supporting the outer guide and the inner guide.

11. The molecular beam source for stacking organic thin films as claimed in claim 3, further comprising a heater disposed through said molecular release channel adjacent to the means for supporting said outer guide and said inner guide.

12. The molecular beam source for stacking organic thin films as claimed in claim 4, further comprising a heater disposed through the molecular release channel adjacent to the means for supporting the outer guide and the inner guide.

13. The molecular beam source for stacking organic thin films as claimed in claim 5, further comprising a heater disposed through said molecular release channel adjacent to the means for supporting said outer guide and said inner guide.

14. The molecular beam source for stacking organic thin films as claimed in claim 6, further comprising a heater disposed through said molecular release channel adjacent to the means for supporting said outer guide and said inner guide.

15. The molecular beam source for stacking organic thin films as claimed in claim 7, further comprising a heater disposed through said molecular release channel adjacent to the means for supporting said outer guide and said inner guide.

16. The molecular beam source for stacking organic thin films as claimed in claim 8, further comprising a heater disposed through said molecular release channel adjacent to the means for supporting said outer guide and said inner guide.

17. The molecular beam source for depositing an organic thin film as claimed in claim 5, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is larger than that of the heater disposed at a side of the vapor generation source.

18. The molecular beam source for depositing an organic thin film as claimed in claim 6, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is larger than that of the heater disposed at a side of the vapor generation source.

19. The molecular beam source for depositing an organic thin film as claimed in claim 7, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is larger than that of the heater disposed at a side of the vapor generation source.

20. The molecular beam source for depositing an organic thin film as claimed in claim 8, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is larger than that of the heater disposed at a side of the vapor generation source.

21. The molecular beam source for depositing an organic thin film as claimed in claim 9, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is larger than that of the heater disposed at a side of the vapor generation source.

22. The molecular beam source for depositing an organic thin film as claimed in claim 10, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is greater than that of the heater disposed at a side of the vapor generation source.

23. The molecular beam source for depositing an organic thin film as claimed in claim 11, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is larger than that of the heater disposed at a side of the vapor generation source.

24. The molecular beam source for depositing an organic thin film as claimed in claim 12, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is larger than that of the heater disposed at a side of the vapor generation source.

25. The molecular beam source for depositing an organic thin film as claimed in claim 13, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is larger than that of the heater disposed at a side of the vapor generation source.

26. The molecular beam source for depositing an organic thin film as claimed in claim 14, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is larger than that of the heater disposed at a side of the vapor generation source.

27. The molecular beam source for depositing an organic thin film as claimed in claim 15, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is larger than that of the heater disposed at a side of the vapor generation source.

28. The molecular beam source for depositing an organic thin film as claimed in claim 16, further comprising a heater disposed at a side of the vapor generation source, wherein a winding density of the heater disposed at a side of the molecular release opening is larger than that of the heater disposed at a side of the vapor generation source.