JP2002118193A - Method for manufacturing semiconductor device - Google Patents

Abstract

(57) Abstract: The present invention relates to a method for manufacturing a semiconductor device in which a semiconductor element for high frequency use is housed in a hermetically sealed hollow package, and particularly to a method for manufacturing a semiconductor device using a glass plate as a lid of the hermetically sealed hollow package. . According to the present invention, an island portion is formed on a first main surface, and a semiconductor chip and the like are fixed to the island portion. The semiconductor chip 29 and the like are hollowly sealed by the columnar portion 23 and the transparent glass plate 36. And the columnar part 23
And the glass plate 36 are bonded with a light-blocking adhesive resin,
In this bonding step, by performing the bonding resin in a high temperature state under reduced pressure, it is possible to reduce the bonding failure at the bonding portion and to provide a method of manufacturing a semiconductor device capable of improving the quality of the semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device for high frequency use and a method for manufacturing a semiconductor device in which an overcurrent protection function is housed in an airtight hollow package.

[0002]

2. Description of the Related Art FIG. 9 shows an example of a conventional semiconductor device using a hollow package. This electronic component includes a base substrate 1 made of ceramic or the like, leads 2 for external connection, and a cap 3 also made of ceramic or the like. A semiconductor chip 5 is fixed to the surface of the element mounting portion 4 of the lead 2. The leads 2 are connected by bonding wires 6, and the semiconductor chip 5 is sealed by an airtight space 7 formed by the cap 3.
It is sealed inside (for example, see JP-A-10-17).
No. 3117).

When manufacturing such components, the leads 2 are supplied in the form of a lead frame, the semiconductor chip 5 is die-bonded and wire-bonded to the lead frame, and the base substrate 1 is attached to the lower surface of the lead frame. Then, the cap 3 is attached to the base substrate 1 so as to sandwich the lead 2, and the lead 2 is cut and shaped.

[0004]

However, in the conventional method of manufacturing a semiconductor device, the air inside the hermetic space 7 expands in the step of attaching the base substrate 1 and the cap 3 to the lead frame for each element. There has been a problem that the adhesive resin is repelled by the expansion of the air, and the adhesive portion causes poor adhesion.

Further, since the semiconductor chip 5 is sealed in the hermetically sealed space 7 formed by the cap 3 made of ceramic or the like, the state of the bonded portion cannot be confirmed by an external inspection, and the semiconductor having a defective bonding has not been confirmed. There was a problem that it was difficult to remove the device.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and a method of manufacturing a semiconductor device according to the present invention is to provide a conductive pattern having a large number of mounting portions formed on a front surface and a rear surface provided with a conductive pattern. A step of preparing a support substrate provided with external connection terminals; a step of fixing circuit elements to the respective mounting portions; and forming an airtight hollow portion for each of the mounting portions between the support substrate and the circuit element. Applying an adhesive resin to the entire adhesive surface of the glass plate to be bonded, bonding the glass plate and the support substrate under reduced pressure, and forming an airtight hollow portion for each of the mounting portions; and Dicing the bonded portion with the glass plate to separate each of the printed portions.

Preferably, in the method of manufacturing a semiconductor device according to the present invention, in the step of bonding the glass plate and the support substrate, the bonding is performed under reduced pressure, so that the air in the hermetic hollow portion does not expand without expanding. Since the process can be performed, it is a process for reducing the bonding failure at the bonding portion and improving the quality of the product.

In order to solve the above-mentioned problems, a method of manufacturing a semiconductor device according to the present invention provides a support substrate provided with a conductive pattern having a large number of mounting portions formed on a front surface and external connection terminals provided on a back surface. A step of fixing a circuit element to each of the mounting portions, and an adhesive resin covering the entire surface of the glass plate forming an airtight hollow portion for each of the mounting portions between the circuit element and the support substrate. Applying, bonding the glass plate and the support substrate in a heating atmosphere, forming an airtight hollow portion for each mounting portion, and dicing the bonded portion between the support substrate and the glass plate. And separating the respective publication sections.

Preferably, in the method of manufacturing a semiconductor device according to the present invention, in the step of bonding the glass plate and the support substrate, the adhesive resin applied to the entire bonding surface of the glass plate is maintained at a high temperature. By bonding to the support substrate while being bonded, the bonding resin is softened once by heating and then hardened, so that a strong bonding is possible, and thus the manufacturing process is to improve the reliability of the product. I do.

[0010]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIGS. 1A and 1B are a sectional view and a plan view, respectively, showing an embodiment of a semiconductor device according to the present invention. Large format board 21
Is separated from the substrate 21a by an insulating material such as ceramic or glass epoxy, and has a plate thickness of 100 to 300 μm and a long side × short side in plan view (observed as shown in FIG. 1B). It has a rectangular shape of about 5 mm × 1.9 mm. The substrate 21a further has a first main surface 22a on the front surface side and a second main surface 22b on the rear surface side, and these surfaces extend parallel to each other. The columnar portion 23 is an annular columnar portion provided so as to surround the outer periphery of the substrate 21a with a height of about 0.4 mm and a width of about 0.5 mm, and a concave portion in which the central portion of the substrate 21a is dented by the columnar portion 23. 24 are formed. The substrate 21 a and the columnar portion 23 are formed by fixing separately formed members with an adhesive 37. Note that the substrate 21a and the columnar portion 23 may be integrated in advance.

The surface of the first main surface 22a of the substrate 21a is formed flat, and an island portion 26 and electrode portions 27 and 28 are formed on the surface by a conductive pattern such as gold plating. Then, the island portion 2 of the substrate 21a
6 includes a Schottky barrier diode and a MOSF
A semiconductor chip 29 such as an ET element is die-bonded. The electrode pads formed on the surface of the semiconductor chip 29 and the electrode portions 27 and 28 are connected by bonding wires 30.

The external connection terminals 32 are formed on the surface of the second main surface 22b of the substrate 21a by a conductive pattern such as gold plating.
33 and 34 are formed. Further, the electrode portions 32, 33,
Reference numeral 34 denotes the first main surface 22a of the substrate 21a to the second main surface 22a.
A via hole 35 penetrating through “b” is provided. The inside of the via hole 35 is buried with a conductive material such as tungsten, silver, or copper, and the island portion 26 is connected to the external connection terminal 32, the electrode portion 27 is connected to the external connection terminal 33, and the electrode portion 28 is connected.
Are electrically connected to the external connection terminals 34, respectively. The ends of the external connection terminals 32, 33, and 34 are set back from the end of the substrate 21 by about 0.01 to 0.1 mm. Also, since the upper portions of the via holes 35 of the electrode portions 27 and 28 are not flat,
It is preferable that the bonding wires 30 are connected so as not to be on the via holes 35 of the electrode portions 27 and 28, respectively.
The external connection terminals 32, 33, and 34 are formed on the large-sized substrate 21 in advance.

In order to make the inside of the recess 24 a closed space, a transparent glass plate 36 having a thickness of about 0.1 to 0.3 mm is used as a lid. The glass plate 36 covers the concave portions 24 formed on the large-format
The light-shielding adhesive 37 is applied in advance to the entire surface of the adhesive surface. The semiconductor chip 29 and the thin metal wire 30 are completely housed in the hermetically sealed space by bonding the upper surface of the columnar portion 23 formed with the concave portion 24 and the bonding surface of the glass plate 36.

Here, the light-shielding adhesive resin 37 is
6, the light transmitted through the glass plate 36 is blocked by the light-blocking adhesive resin 37, so that the light does not directly hit the semiconductor chip 29 and the like inside the concave portion 24. .

The periphery of the semiconductor chip 29 is surrounded by the columnar portion 23 cut by dicing, and the upper portion thereof is sealed by a cut glass plate 36. The columnar portion 23 and the first main surface 22a of the substrate 21a, and the columnar portion 23 and the glass plate 36 are bonded by an adhesive 37. As a result, the semiconductor chip 29 and the thin metal wire 30 are housed in the hermetic space defined by the recess 24. The outer peripheral end surfaces of the substrate 21a, the columnar portions 23, and the glass plate 36 become flat cut end surfaces cut by dicing.

The above-described semiconductor device is mounted such that the external connection electrodes 32, 33, and 34 are adhered to the electrode patterns on the mounting board.

Here, an embodiment in which the substrate is covered with a resin layer and each of the semiconductor chips fixed to each mounting portion is covered with a common resin layer will be briefly described.

On a substrate having a thickness of 200 to 350 μm capable of maintaining mechanical strength in a manufacturing process, a plurality of mounting portions are provided.
For example, a large-sized substrate in which 100 pieces are arranged vertically and horizontally in 10 rows and 10 columns is prepared. The substrate is an insulating substrate made of ceramic, glass epoxy, or the like. Then, a semiconductor chip is die-bonded for each mounting portion, a predetermined amount of epoxy liquid resin is dropped (potted), and all the semiconductor chips are covered with a common resin layer. 100 to 2 drops of the dropped resin layer
After curing by heat treatment (curing) at 00 degrees for several hours, the surface of the resin layer is processed into a flat surface by grinding the curved surface. The grinding is performed by using a dicing apparatus, and the surface of the resin layer is cut by a dicing blade so that the surface of the resin layer is aligned with a predetermined height from the substrate. In this step, the thickness of the resin layer is formed to 0.3 to 1.0 mm. The blade is prepared in various thicknesses, and the whole is formed into a flat surface by repeating cutting a plurality of times using a relatively thick blade.

FIG. 2 is a sectional view (A) and a plan view (B) showing an embodiment of an overcurrent protection device using a fuse. The substrate 51 is made of an insulating material such as ceramic or glass epoxy. A plate thickness of 100 to 300 μm and a long side × short side of 2.5 m in plan view (observed as shown in FIG. 2B)
It has a rectangular shape of about mx 1.9 mm. Substrate 51
Further has a first main surface 52a on the front surface side and a second main surface 52b on the back surface side. The columnar portion 53 is an annular side portion provided so as to surround the periphery of the substrate 51 with a height of about 0.4 mm and a width of about 0.5 mm, and a concave portion in which the central portion of the substrate 51 is dented by the columnar portion 53. 54 are formed. The substrate 51 and the columnar portion 53 are obtained by fixing separately formed members to the adhesive 61. Note that the substrate 51 and the columnar portion 53 may be integrated in advance.

The surface of the first main surface 52a of the substrate 51 is formed flat, and electrode portions 55 and 56 are formed on the surface by a conductive pattern such as gold plating. For example, a thin metal wire 5 having a diameter of 30 μm is provided between the electrode portions 55 and 56.
7 is struck by a wire bond. Metal wire 57
Consists of gold wire of 99.99% purity, fine wire of solder, etc.
A first bond is applied to the electrode portion 55, and a second bond is made to the electrode portion 56 with a wire loop having a height that can be accommodated in the height of the concave portion 54.

The external connection terminals 58, 5 are formed on the surface of the second main surface 52b of the substrate 51 by a conductive pattern such as gold plating.
9 are formed. Further, a via hole 60 penetrating the substrate 51 is provided below the electrode portions 55 and 56. The inside of the via hole 60 is buried with a conductive material such as tungsten, and the electrode portion 55 is connected to the external connection terminal 58.
The electrode portions 56 are electrically connected to the external connection terminals 59, respectively. The ends of the external connection terminals 58 and 59 are recessed from the end of the substrate 51 by about 0.01 to 0.1 mm. Further, since the upper portions of the via holes 35 of the electrode portions 27 and 28 are not flat, the bonding wires 30
It is preferable that the connection is made so as to avoid over the 8 via holes 35.

In order to make the inside of the recess 54 a closed space, a transparent glass plate 62 having a plate thickness of about 0.1 to 0.3 mm is used as a lid. The glass plate 62 covers a large number of concave portions 54 formed on the large-format
A light-shielding adhesive material 61 is applied in advance to the entire surface of the adhesive surface of. Then, the upper portion of the columnar portion 53 formed by the concave portion 54 is bonded to the bonding surface of the glass plate 62, so that the thin metal wire 57 is completely housed in the airtight space.

Here, the light-shielding adhesive resin 61 is
The light transmitted through the glass plate 62 is blocked by the light-shielding adhesive resin 61 by being applied to the entire surface of the adhesive surface of No. 2, so that the light does not directly hit the thin metal wires 57 inside the recess 54. .

The above-described overcurrent protection device is mounted such that the external connection electrodes 58 and 59 are adhered to the electrode pattern on the mounting board. When an overcurrent exceeding the rating flows between the external connection terminals 58 and 59, the overcurrent flows through the thin metal wire 57 and causes a rapid temperature rise due to the specific resistance of the thin metal wire 57. Due to this heat generation, the thin metal wire 57 is blown to perform a function of protecting against overcurrent. The above diameter 30
μm gold (Au) wire, wire length, about 0.7 mm
In this case, the fusing current is about 4 A (1 to 5 seconds). In many cases, due to the relationship between heat dissipation and resistance, the fusing occurs near the center of the thin metal wire 57 rather than at a location near the electrode portions 55 and 56. At this time, since the fusing portion is not in contact with another material such as resin, it is possible to obtain a device that does not cause ignition, smoke, discoloration, or deformation in appearance. Further, by fusing the thin metal wire 27, an element in which terminals are completely open at the time of overcurrent can be obtained.

As the fuse element, in addition to a thin metal wire, a part of a conductive pattern forming the electrode portions 55 and 56 is made narrow and continuous like a wedge, or a polysilicon resistor is fixed. It can also be formed by the above method. In short, it is only necessary that the fusing portion be housed in the concave portion 54. Further, the inside of the concave portion 54 is sealed in the atmosphere, but may be filled with a nonflammable gas such as a nitrogen atmosphere.

As described above, the semiconductor device of the present invention
By using a transparent glass plate 36 to make the semiconductor chip 29, the bonding wires 30 and the like airtight and hollow, the state of the bonded portion between the glass plate 36 and the columnar portion 23 can be confirmed by an appearance inspection. Further, since the light-shielding adhesive resin 37 is applied to the entire surface of the bonding surface of the glass plate 36, light transmitted through the glass plate 36 enters the recess 24,
It is possible to prevent the semiconductor chip 29 or the like from directly hitting the semiconductor chip 29 or the like and deteriorating the characteristics of the semiconductor chip 29 or the like.

Further, in the semiconductor device of the present invention, the columnar portion 2
A hollow structure can be formed by using 3 and the glass plate 36, and the semiconductor chip 29 and the like die-bonded on the substrate 21a are housed in an airtight space defined by the concave portion 24 which is a hollow portion. As a result, the material cost can be significantly reduced as compared with the case where the substrate 21a is covered with the resin layer and the semiconductor chip 29 fixed to the mounting portion is covered with the resin layer.

Further, in the semiconductor device of the present invention, the columnar portion 2
3 and the glass plate 36, a hollow structure can be formed. Since the glass plate 36 is used as a lid of the hollow structure, a step of flattening the surface of the semiconductor element is not required. The manufacturing cost can be greatly reduced as compared with the case where the semiconductor chip 29 covered with the resin layer and fixed to the mounting portion is covered with the resin layer.

Further, the substrate 21a is provided with a via hole 35 penetrating from the first main surface 22a to the second main surface 22b. Then, the inside of the via hole 35 is tungsten,
The island portion 26 is buried with a conductive material such as silver or copper, and the island portion 26 is electrically connected to the external connection terminal 32, the electrode portion 27 is connected to the external connection terminal 33, and the electrode portion 28 is connected to the external connection terminal 34. Can be electrically connected to the external connection terminal, and does not require a lead led out from the board 21a. Therefore, when mounted on a printed circuit board, the mounting area can be significantly reduced. Can be.

Hereinafter, the first embodiment of the present invention shown in FIG. 1 will be described in detail.

First Step: See FIG. 3A First, a large-sized substrate 21 is prepared. The large-sized substrate 21 is made of an insulating material such as ceramic or glass epoxy.
It has a thickness of 300 μm. The large-size substrate 21 further includes
A first main surface 22a is provided on the front side, and a second main surface 22b is provided on the back side. Reference numeral 23 denotes a grid-like columnar portion provided at a constant width of about 0.1 to 0.5 mm in height and about 0.25 to 0.5 mm, and the columnar portion 23 depresses a central portion of the substrate 21. Recess 24 is formed. The substrate 21 and the columnar portion 23 are integrally formed in advance, and the columnar portion 23 is formed.
And the plate thickness described above. In addition, what formed the board | substrate 21 and the columnar part 23 separately, and adhered and fixed may be prepared.

The concave portion 24 has, for example, a size of about 0.1 mm.
It has a size of 8 mm × 0.6 mm and is arranged on the substrate 21 at equal intervals vertically and horizontally. A large number of sets of island portions 26 and electrode portions 27 and 28 are drawn on the first main surface 22a of the concave portion 24 by a conductive pattern such as gold plating. Each recess 24 and a part of the columnar portion 23 of the second substrate 21b surrounding the recess 24 constitute the element mounting portion 41.

Second Step: See FIG. 3B After such a substrate 21 is prepared, a semiconductor chip 29 is die-bonded to the island portion 26 for each recess 24, and a bonding wire 30 is wire-bonded. Then, the bonding wire 3 wire-bonded to the semiconductor chip 29
One side of 0 is connected to the electrode portions 27 and 28. At this time, the loop height of the bonding wire 30 is
The height shall be less than the height of.

Third step: see FIGS. 4A and 4B A transparent glass plate 36 having a thickness of about 0.1 to 0.3 mm is prepared, and 36
A light-blocking adhesive resin 37 for bonding the columnar part 23 with the light-shielding adhesive resin 37 is applied. When the glass plate 36 and the columnar portion 23 are thermocompression-bonded to each other, the light-shielding adhesive resin 37 is heated once from room temperature to 150 ° C., and then softened once, and then hardened. Bonding is performed.

However, at this time, at the same time, the air inside the concave portion 24 is expanded by the heat of the thermocompression bonding, so that the expanded air causes the light-shielding adhesive resin 37 in the bonding portion 44 to be repelled, resulting in poor adhesion. I will. Therefore, in the manufacturing method of the present invention, the glass plate 36 and the columnar portion 23 are bonded under reduced pressure while keeping the light-shielding adhesive resin at a high temperature.

More specifically, for each concave portion 24, a semiconductor chip 29 is die-bonded to the island portion 26, and the substrate 21 on which the bonding wires 30 are wire-bonded and a light-shielding adhesive resin 37 coated on the entire surface of the bonding surface. The plate 36
Prepared in the manipulator. Then, by lowering the air pressure in the manipulator using a vacuum device, it is possible to bond the glass plate 36 and the columnar portion 23 in a high temperature state but in a state where the expansion of the air in each recess 24 is suppressed. Become. As a result, a manufacturing process in which poor bonding at the bonding portion 44 is suppressed is achieved.

Then, for example, the large-sized substrate 21 and the columnar portion 2
3 to form an airtight hollow structure on the mounting portion 41 including the plurality of concave portions 24 formed. As a result, the semiconductor chip 29 and the bonding wires 30 are completely housed in the hermetic space. At this time, as described above, since the light-blocking adhesive resin 37 is applied to the entire surface of the glass plate 36, a large number of semiconductor elements can be formed at one time.

Here, the large-sized substrate 21 and the columnar portion 23 are
The columnar portion 23 may be adhered later, or may be formed integrally in advance. Further, the concave portion 24 may be formed by excavating the large-sized substrate 21.

Thereafter, since the glass plate 36 is made of a transparent material, the state of the bonding portion 44 can be visually checked from above the glass plate 36.
A check is made after bonding to determine whether or not No. 6 has a bonding failure.

Fourth Step: See FIG. 4 (C) Then, based on the alignment marks formed on the surface of the substrate 21, each mounting portion 41 is divided to obtain individual devices as shown in FIG. A dicing blade 42 is used for the division, and a dicing sheet is attached to the back surface of the substrate 21.
The substrate 21 and the glass plate 36 are cut at once along the dicing line 43 vertically and horizontally. In addition, dicing line 4
3 is located at the center of the columnar portion 23. Alternatively, a dicing sheet may be attached to the glass plate 36 and diced from the second main surface 22b side.

Hereinafter, a second embodiment of the present invention shown in FIG. 1 will be described. This is a case where the columnar portion 23 is configured as an individual component.

First Step: See FIG. 6A First, a large-sized flat plate-shaped substrate 21 is prepared. Large format board 2
1 is made of an insulating material such as ceramic or glass epoxy, and has a thickness of 100 to 300 μm. Large format board 2
1 further includes a first main surface 22a on the front surface side and a second main surface 22b on the back surface side. Numerous sets of island portions 26 and electrode portions 27 and 28 are drawn on the surface of the first main surface 22a by a conductive pattern such as gold plating. A region surrounding the island 26 and the periphery of the electrode portions 27 and 28 forms an element mounting portion 41, and a large number of the element mounting portions 41 are arranged at equal intervals in the vertical and horizontal directions.

Second Step: See FIG. 6B After such a substrate 21 is prepared, the semiconductor chip 29 is die-bonded to the island portion 26 and the bonding wire 30 is wire-bonded for each element mounting portion 41. Then, one side of the bonding wire 30 wire-bonded to the semiconductor chip 29 is connected to the electrode portions 27 and 28.
At this time, the loop height of the bonding wire 30 is set to be smaller than the depth of the recess 24.

Third Step: See FIG. 7A The second substrate 21 a having a concave portion 24 (through hole) at a position corresponding to the element mounting portion 41 is placed on the substrate 21 on which die bonding and wire bonding have been completed. It is adhesively fixed to the surface of the main surface 22a. An epoxy adhesive or the like is used for the adhesion.

The recess 24 has, for example, one size of about 0.8.
It has a size of mm × 0.6 mm and is arranged on the second substrate 21b at equal intervals vertically and horizontally. Between the concave portions 24, the columnar portions 23 are surrounded in a grid with a constant width of about 0.1 to 0.2 mm in height and about 0.2 to 0.5 mm.
Thus, the island 26, the semiconductor chip 29,
The electrode pads 27, 28 and the like are exposed, and this is equivalent to the state of FIG. With this method, the flat substrate 2
Since the die bonding and the wire bonding can be performed with respect to 1, there is no contact between the columnar portion 23 and the suction collet or the bonding tool, and the size of the concave portion 24 can be reduced.

Fourth Step: See FIGS. 7B and 7C A transparent glass plate 36 having a thickness of about 0.1 to 0.3 mm is prepared. 36
A light-blocking adhesive resin 37 for bonding the columnar part 23 with the light-shielding adhesive resin 37 is applied. When the glass plate 36 and the columnar portion 23 are thermocompression-bonded to each other, the light-shielding adhesive resin 37 is heated once from room temperature to 150 ° C., and then softened once, and then hardened. Bonding is performed.

However, at the same time, the air inside the concave portion 24 is expanded by the heat of the thermocompression bonding, so that the expanded air causes the light-shielding adhesive resin 37 in the bonding portion 44 to be repelled, resulting in poor adhesion. I will. Therefore, in the manufacturing method of the present invention, the glass plate 36 and the columnar portion 23 are bonded under reduced pressure while keeping the light-shielding adhesive resin at a high temperature.

More specifically, for each concave portion 24, a semiconductor chip 29 is die-bonded to the island portion 26, and the substrate 21 on which the bonding wires 30 are wire-bonded, and a light-shielding adhesive resin 37 coated on the entire surface of the bonding surface. The plate 36
Prepared in the manipulator. Then, by lowering the air pressure in the manipulator using a vacuum device, it becomes possible to bond the glass plate 36 and the columnar portion 23 in a high temperature state but in a state in which the expansion of the air in each recess 24 is suppressed. .
As a result, a manufacturing process in which poor bonding at the bonding portion 44 is suppressed is achieved.

Then, for example, the large-sized substrate 21 and the columnar portion 2
3 to form an airtight hollow structure on the mounting portion 41 including the plurality of concave portions 24 formed. As a result, the semiconductor chip 29 and the bonding wires 30 are completely housed in the hermetic space. At this time, as described above, since the light-blocking adhesive resin 37 is applied to the entire surface of the glass plate 36, a large number of semiconductor elements can be formed at one time.

Here, the large-sized substrate 21 and the columnar portion 23 are
The columnar portion 23 may be adhered later, or may be formed integrally in advance. Further, the concave portion 24 may be formed by excavating the large-sized substrate 21.

Thereafter, since the transparent glass plate 36 is used, the state of the bonding portion 44 can be visually checked from above the glass plate 36, so that the columnar portion 23 and the glass plate 3
A check is made after bonding to determine whether or not No. 6 has a bonding failure.

Fifth step: Refer to FIG. 8 (A). Then, based on the alignment marks formed on the surface of the substrate 21, each mounting portion 41 is divided into individual devices as shown in FIG. 8 (B). Get. Dicing blade 4 for division
2, a dicing sheet is adhered to the second main surface 22b side of the substrate 21, and the substrate 21, the second substrate 21b, and the glass plate 36 are cut collectively along the dicing line 43 vertically and horizontally. In addition, the dicing line 43 is the columnar portion 23
Located in the center of. Further, a configuration in which dicing is performed from the second main surface 22b side may be employed.

[0054]

As described above, according to the method for manufacturing a semiconductor device of the present invention, by performing the bonding process under reduced pressure, the air in the hermetically sealed hollow portion is reduced due to the high temperature operation during thermocompression bonding. Reduce swelling. As a result, the adhesive resin at the bonding portion between the glass plate and the columnar portion is prevented from being repelled by the inflated air, the bonding failure at the bonding portion can be reduced, and the quality of the product can be improved. .

Further, according to the method of manufacturing a semiconductor device of the present invention, by performing the bonding step while keeping the adhesive resin at a high temperature, the adhesive resin is bonded in a state of being softened once by heating, and thereafter, By curing, strong bonding is possible, so that the reliability of the product can be improved.

Further, according to the method of manufacturing a semiconductor device of the present invention, the state of the bonded portion between the glass plate and the columnar portion is changed by using a transparent glass plate for hermetically sealing the semiconductor chip, the bonding wires and the like. It can be confirmed by visual inspection.

Further, according to the method of manufacturing a semiconductor device of the present invention, since the light-shielding adhesive resin is applied in advance to the entire adhesive surface of the glass plate forming the airtight hollow structure, it is formed by the substrate and the columnar portion. Since it can be bonded to a large number of concave portions at once, the manufacturing cost can be greatly reduced, and mass production can be performed.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view for explaining the present invention, and FIG.
It is a top view.

FIGS. 2A and 2B are cross-sectional views for explaining the present invention; FIGS.
It is a top view.

3A is a perspective view for explaining the present invention, and FIG.
It is a perspective view.

4A and 4B are cross-sectional views for explaining the present invention.
It is a perspective view, (C) perspective view.

FIG. 5 is a perspective view for explaining the present invention.

6A is a perspective view for explaining the present invention, and FIG.
It is a perspective view.

7A is a perspective view for explaining the present invention, and FIG.
It is sectional drawing and (C) perspective view.

8A is a perspective view for explaining the present invention, and FIG.
It is a perspective view.

9A is a cross-sectional view for explaining a conventional example, and FIG.
It is a top view.

Claims (5)

[Claims] A step of providing a conductive pattern having a plurality of mounting portions formed on a front surface thereof and a supporting substrate having an external connection terminal provided on a back surface thereof; and a step of fixing a circuit element to each of the mounting portions. A step of applying an adhesive resin to the entire adhesive surface of the glass plate forming an airtight hollow portion for each mounting portion between the circuit element and the support substrate, and applying a reduced pressure to the glass plate and the support substrate. Manufacturing a semiconductor device, comprising: bonding and forming an airtight hollow portion for each of the mounting portions; and dicing the bonded portion between the support substrate and the glass plate to separate each of the mounting portions. Method. 2. The method according to claim 1, wherein said adhesive resin is a light-shielding adhesive resin. Providing a conductive substrate having a plurality of mounting portions formed on a front surface thereof and providing a support substrate having an external connection terminal provided on a back surface thereof; and fixing a circuit element to each of the mounting portions. A step of applying an adhesive resin to the entire adhesive surface of the glass plate forming an airtight hollow portion for each of the mounting portions between the circuit element and the support substrate, and heating the glass plate and the support substrate in a heating atmosphere. Forming a hermetic hollow portion for each of the mounting portions; and dicing the bonded portion between the support substrate and the glass plate to separate each of the mounting portions. Production method. 4. The method for manufacturing a semiconductor device according to claim 3, wherein in the bonding step, the bonding resin is softened by heating before bonding and is hardened after bonding to increase bonding strength. . 5. The method according to claim 3, wherein the adhesive resin is a light-shielding adhesive resin.